Optimization scheme for loss of fast recovery diode in high-frequency switching power supply——Performance analysis based on Hua Xuan Yang Electronics MUR860-HXY
The core of energy efficiency improvement for high-frequency switching power supplies lies in the control of power device losses. This article focuses on the optimization of conduction loss and switching loss of fast recovery diodes (FRDs), combined with the key parameters of Hua Xuan Yang Electronics‘ MUR860-HXY (reverse recovery time trr=50ns, forward voltage drop VF ≤ 1.5V@8A )By quantitatively comparing A brand products, provide engineers with design references to reduce system power consumption and improve reliability.
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2.1 Loss mechanism and key parameter correlation
The fast recovery diode loss is mainly composed of two parts:
-Conduction loss (Pcond): related to forward voltage drop VF, load current IF, and conduction duty cycle D
Formula: Pcond=VF × IF × D (Source: IEEE Power Electronics Society)
-Switching loss (Psw): related to reverse recovery time trr, reverse voltage VRRM, and switching frequency f
Formula: Psw=0.5 × VRRM × Qrr × f (Qrr is the reverse recovery charge, which is related to trr and the waveform of the reverse recovery current)
Huaxuanyang MUR860-HXY (TO-220C-2L) parameter advantages:
-Low VF (≤ 1.5V@8A )→ Directly reduce conduction loss
-Short TRR (50ns) → significantly reduces high-frequency components of switching losses
2.2 Parameter comparison and loss quantification analysis
Calculation scenario (assuming conditions: f=100kHz, IF=8A, D=0.4, VRRM=400V):
1. Comparison of conduction losses:
- MUR860-HXY:Pcond = 1.5V × 8A × 0.4 = 4.8W
-A brand product: Pcond=1.7V × 8A × 0.4=5.44W
Difference: 0.64W (13.3% higher)
2. Comparison of switch losses (Qrr estimation: Qrr ≈ trr × Irrm/k, taking empirical coefficient k=2.5):
- MUR860-HXY:Qrr ≈ 50ns × 8A / 2.5 = 160nC
Psw = 0.5 × 400V × 160nC × 100kHz = 3.2W
-A brand product: Qrr ≈ 80ns × 8A/2.5=256nC
Psw = 0.5 × 400V × 256nC × 100kHz = 5.12W
Difference: 1.92W (60% higher)
Total loss reduction:
- MUR860-HXY:4.8W + 3.2W = 8.0W
-A brand product: 5.44W+5.12W=10.56W
Energy efficiency improvement: 2.56W (reduced by 24.2%), suitable for kilowatt level power systems
2.3 Multi scenario applicability verification
2.4 Reliability Design Boundary
-Junction temperature protection: Tj=150 ℃ allows for higher ambient temperature operation (calculation basis: maximum allowable power consumption PD=(Tj (max) - TA)/R θ JA when junction to ambient thermal resistance R θ JA=40 ℃/W)
-Surge tolerance: IFSM=100A (single pulse) supports IEC 61000-4-5 standard (1.2/50 μ s surge test)
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conclusion
Huaxuanyang Electronics MUR860-HXY has a reverse recovery time of 50ns and ≤ 1.5V@8A The collaborative optimization of forward voltage drop can achieve a total loss reduction of over 24% in high-frequency switching power supplies, significantly improving system energy efficiency. Its 150 ℃ junction temperature and 100A surge capability further enhance its adaptability to industrial environments. It is recommended to prioritize the use of AC/DC converters and PFC circuits with output power ≥ 500W and switching frequency>50kHz.