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<title> 【HXY MOSFET】|Replacing imported devices,MOS transistor, ESD TVS, Diode,Transistor, </title>
<description><![CDATA[Shenzhen focuses on replacing imported domestic brands, and 【HXY MOSFET】has over 10 years of experience in researching and manufacturing power device diodes and transistors. We are dedicated to providing customers with solutions to replace imported products, and our service hotline is 18211555634]]></description>
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<docs> 【HXY MOSFET】|Replacing imported devices,MOS transistor, ESD TVS, Diode,Transistor, </docs>
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<item>
	<title><![CDATA[74HC573(DIP-20)]]></title>
	<category domain="http://www.hxymos.com/en/latch/">Latch</category>
	<link><![CDATA[http://www.hxymos.com/en/latch/74hc573-dip-20-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:54:02</pubDate>
	<description><![CDATA[Product Category: Latch     Packing: DIP-20      Parameter Introduction:Logic type: D-type latch, power supply voltage: 2V~6V, propagation delay: 14ns, series: 74HC,     (Ordering Information):  Product Code: H102216     Minimum packaging: 18pcs      Gross weight/gram :1.618g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[4054(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/battery-management/">Battery-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/battery-management/4054-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:53:50</pubDate>
	<description><![CDATA[Product Category: Battery-IC     Packing: SOT-23-5L      Parameter Introduction:Chip type: Linear battery management chip, power supply voltage: 6.5V, maximum charging current: 500mA, charging saturation voltage: 4.2V,     (Ordering Information):  Product Code: H107813     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[DTC124EE(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/digital-transistor/">Digital transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/digital-transistor/dtc124ee-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:53:38</pubDate>
	<description><![CDATA[Product Category: Digital transistor     Packing: SOT-523      Parameter Introduction:Transistor type: 1 NPN pre bias, collector emitter breakdown voltage (Vceo): 50V, collector current (Ic): 100mA, power (Pd): 150mW,     (Ordering Information):  Product Code: H105011     Minimum packaging: 3000pcs      Gross weight/gram :0.022g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[DTC143ZET(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/digital-transistor/">Digital transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/digital-transistor/dtc143zet-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:53:26</pubDate>
	<description><![CDATA[Product Category: Digital transistor     Packing: SOT-523      Parameter Introduction:Transistor type: 1 NPN pre bias, collector emitter breakdown voltage (Vceo): 50V, collector current (Ic): 100mA, power (Pd): 200mW,     (Ordering Information):  Product Code: H107771     Minimum packaging: 3000pcs      Gross weight/gram :0.022g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXL1509-ADJ(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/dc-dc-power-chip/">DC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/dc-dc-power-chip/hxl1509-adj-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:53:14</pubDate>
	<description><![CDATA[Product Category: DC-DC     Packing: SOP-8      Parameter Introduction:Function type: step-down type, input voltage: 4.5V~40V, output voltage: 12V, output current: 3A,     (Ordering Information):  Product Code: H105217     Minimum packaging: 3000或2500pcs      Gross weight/gram :0.13g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXL1509-5.0(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/dc-dc-power-chip/">DC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/dc-dc-power-chip/hxl1509-5-0-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:53:02</pubDate>
	<description><![CDATA[Product Category: DC-DC     Packing: SOP-8      Parameter Introduction:Function type: step-down type, input voltage: 4.5V~40V, output voltage: 5.0V, output current: 3A,     (Ordering Information):  Product Code: H105216     Minimum packaging: 3000或2500pcs      Gross weight/gram :0.13g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXL1509-3.3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/dc-dc-power-chip/">DC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/dc-dc-power-chip/hxl1509-3-3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:52:50</pubDate>
	<description><![CDATA[Product Category: DC-DC     Packing: SOP-8      Parameter Introduction:Function type: step-down type, input voltage: 4.5V~40V, output voltage: 3.3V, output current: 3A,     (Ordering Information):  Product Code: H105215     Minimum packaging: 3000或2500pcs      Gross weight/gram :0.13g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSN74LVC2G14DBVR(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/inverter/">Inverter</category>
	<link><![CDATA[http://www.hxymos.com/en/inverter/hsn74lvc2g14dbvr-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:52:38</pubDate>
	<description><![CDATA[Product Category: Inverter     Packing: SOT-23-6L      Parameter Introduction:Power supply voltage: 1.65V~5.5V, input type: Schmitt trigger, power supply current (maximum): 10uA, number of circuits: 2,     (Ordering Information):  Product Code: H105213     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSN74LVC1G04DCKR(SOT-353)]]></title>
	<category domain="http://www.hxymos.com/en/inverter/">Inverter</category>
	<link><![CDATA[http://www.hxymos.com/en/inverter/hsn74lvc1g04dckr-sot-353-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:52:26</pubDate>
	<description><![CDATA[Product Category: Inverter     Packing: SOT-353      Parameter Introduction:Power supply voltage: 1.65V~5.5V, power supply current (maximum): 10uA, circuit number: 1, input number: 1,     (Ordering Information):  Product Code: H105210     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSN74LVC1G14DCKR(SOT-353)]]></title>
	<category domain="http://www.hxymos.com/en/inverter/">Inverter</category>
	<link><![CDATA[http://www.hxymos.com/en/inverter/hsn74lvc1g14dckr-sot-353-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:52:14</pubDate>
	<description><![CDATA[Product Category: Inverter     Packing: SOT-353      Parameter Introduction:Power supply voltage: 1.65V~5.5V, input type: Schmitt trigger, power supply current (maximum): 10uA, number of circuits: 1,     (Ordering Information):  Product Code: H105212     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSGL160N60UFDTU(TO-264)]]></title>
	<category domain="http://www.hxymos.com/en/igbt/">IGBT</category>
	<link><![CDATA[http://www.hxymos.com/en/igbt/hsgl160n60ufdtu-to-264-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:51:50</pubDate>
	<description><![CDATA[Product Category: IGBT     Packing: TO-264      Parameter Introduction:Collector emitter breakdown voltage (VCES): 600V, collector current (Ic): 160A, power (Pd): 250W, gate threshold voltage (Vge (th) @ Ic): 2.6V@15V ,80A，     (Ordering Information):  Product Code: H105235     Minimum packaging: 24pcs      Gross weight/gram :11.64g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BCV47(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/darlington-transistor-array/">Darlington</category>
	<link><![CDATA[http://www.hxymos.com/en/darlington-transistor-array/bcv47-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:51:38</pubDate>
	<description><![CDATA[Product Category: Darlington     Packing: SOT-23      Parameter Introduction:Type: NPN, Voltage/V: 60, Current/A: 0.5, Reverse Current/uA: 0.1,     (Ordering Information):  Product Code: H105200     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[1SMA4747A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/1sma4747a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:49:13</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SMA      Parameter Introduction:VR/V:20,VF/V:1.2,IR/uA:5,PD/W:2,     (Ordering Information):  Product Code: H107775     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[PTZ27B(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/ptz27b-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:48:59</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SMA      Parameter Introduction:VR/V:37,VF/V:1.2,IR/uA:10,PD/W:1,     (Ordering Information):  Product Code: H104999     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[PTZ36B(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/ptz36b-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:48:46</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SMA      Parameter Introduction:VR/V:36,VF/V:1.2,IR/uA:10,PD/W:1,     (Ordering Information):  Product Code: H104998     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[1SMB5934B(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/1smb5934b-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:48:33</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SMB      Parameter Introduction:VR/V:9.1,VF/V:1.5,IR/uA:5,PD/W:3,     (Ordering Information):  Product Code: H105013     Minimum packaging: 3000pcs      Gross weight/gram :0.191g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[1SMA4733A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/1sma4733a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:48:19</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SMA      Parameter Introduction:VR/V:5.1,VF/V:1.2,IR/uA:10,PD/W:2,     (Ordering Information):  Product Code: H105022     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BZT52C22S(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c22s-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:48:06</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-323      Parameter Introduction:VR/V:22,VF/V:0.9,IR/uA:0.1,PD/W:0.2,     (Ordering Information):  Product Code: H105021     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BZT52C30(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c30-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:47:52</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-123      Parameter Introduction:VR/V:30,VF/V:0.85,IR/uA:0.04,PD/W:0.5,     (Ordering Information):  Product Code: H105007     Minimum packaging: 3000pcs      Gross weight/gram :0.035g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BZT52C33(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c33-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:47:39</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-123      Parameter Introduction:VR/V:33,VF/V:0.85,IR/uA:0.04,PD/W:0.5,     (Ordering Information):  Product Code: H105008     Minimum packaging: 3000pcs      Gross weight/gram :0.035g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[1SMB5929B(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/1smb5929b-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:47:26</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SMB      Parameter Introduction:VR/V:15,VF/V:1.5,PD/W:3,     (Ordering Information):  Product Code: H102460     Minimum packaging: 3000pcs      Gross weight/gram :0.191g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMA2EZ24(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/sma2ez24-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:47:12</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SMA      Parameter Introduction:VR/V:24,VF/V:1.2,IR/uA:0.5,PD/W:2,     (Ordering Information):  Product Code: H107770     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BZT52B15(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52b15-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:46:59</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-123      Parameter Introduction:VR/V:15,VF/V:0.9,IR/uA:0.1,PD/W:0.5,     (Ordering Information):  Product Code: H107807     Minimum packaging: 3000pcs      Gross weight/gram :0.035g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BZT52B16(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52b16-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:46:45</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-123      Parameter Introduction:VR/V:16,VF/V:0.9,IR/uA:0.1,PD/W:0.5,     (Ordering Information):  Product Code: H107806     Minimum packaging: 3000pcs      Gross weight/gram :0.035g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BZT52C3V0(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c3v0-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:46:32</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-123      Parameter Introduction:IF/V:3,VF/V:0.85,IR/uA:8,PD/W:0.5     (Ordering Information):  Product Code: H105201     Minimum packaging: 3000pcs      Gross weight/gram :0.035g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[GBJ1510(GBJ)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/gbj1510-gbj-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:44:20</pubDate>
	<description><![CDATA[Product Category: Rectifier bridge     Packing: GBJ      Parameter Introduction:Current: 7.5A, Voltage: 1000V, Voltage Drop: 1.1V,     (Ordering Information):  Product Code: H102108     Minimum packaging: 250pcs      Gross weight/gram :7.005g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MB6F(MBF)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/mb6f-mbf-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:44:08</pubDate>
	<description><![CDATA[Product Category: Rectifier bridge     Packing: SOP-4      Parameter Introduction:Current: 1A, Voltage: 600V, Voltage Drop: 1V,     (Ordering Information):  Product Code: H107941     Minimum packaging: 3000pcs      Gross weight/gram :0.195g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[GBU408(GBU)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/gbu408-gbu-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:43:56</pubDate>
	<description><![CDATA[Product Category: Rectifier bridge     Packing: GBU      Parameter Introduction:VR:800V,IF:4A,VF:1.1V,IR:5uA,IFSM:150A     (Ordering Information):  Product Code: H105031     Minimum packaging: 500pcs      Gross weight/gram :3.833g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[KBP406(KBP)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/kbp406-kbp-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:43:44</pubDate>
	<description><![CDATA[Product Category: Rectifier bridge     Packing: KBP      Parameter Introduction:VR:600V,IF:4A,VF:1.1V,IR:10uA,IFSM:150A     (Ordering Information):  Product Code: H105035     Minimum packaging: 500pcs      Gross weight/gram :1.641g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[KBP308(KBP)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/kbp308-kbp-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:43:32</pubDate>
	<description><![CDATA[Product Category: Rectifier bridge     Packing: KBP      Parameter Introduction:VR:800V,IF:3A,VF:1.1V,IR:5uA,IFSM:80A     (Ordering Information):  Product Code: H105034     Minimum packaging: 500pcs      Gross weight/gram :1.641g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[KBP306(KBP)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/kbp306-kbp-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:43:20</pubDate>
	<description><![CDATA[Product Category: Rectifier bridge     Packing: KBP      Parameter Introduction:VR:600V,IF:3A,VF:1.1V,IR:5uA,IFSM:80A     (Ordering Information):  Product Code: H105033     Minimum packaging: 500pcs      Gross weight/gram :1.641g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[GBU806(GBU)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/gbu806-gbu-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:43:08</pubDate>
	<description><![CDATA[Product Category: Rectifier bridge     Packing: GBU      Parameter Introduction:VR:600V,IF:8A,VF:1.1V,IR:5uA,IFSM:200A     (Ordering Information):  Product Code: H105032     Minimum packaging: 500pcs      Gross weight/gram :3.833g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[GBU1508(GBU)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/gbu1508-gbu-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:42:56</pubDate>
	<description><![CDATA[Product Category: Rectifier bridge     Packing: GBU      Parameter Introduction:VR:800V,IF:15A,VF:1.05V,IR:5uA,IFSM:220A     (Ordering Information):  Product Code: H105030     Minimum packaging: 500pcs      Gross weight/gram :3.833g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[KBU1510(KBU)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/kbu1510-kbu-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:42:44</pubDate>
	<description><![CDATA[Product Category: Rectifier bridge     Packing: KBU      Parameter Introduction:VR:1000V,IF:15A,VF:1.1V,IR:5uA,IFSM:300A     (Ordering Information):  Product Code: H105029     Minimum packaging: 400pcs      Gross weight/gram :6.587g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[KBU806(KBU)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/kbu806-kbu-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:42:32</pubDate>
	<description><![CDATA[Product Category: Rectifier bridge     Packing: KBU      Parameter Introduction:VR:600V,IF:8A,VF:1.1V,IR:10uA,IFSM:180A     (Ordering Information):  Product Code: H105028     Minimum packaging: 400pcs      Gross weight/gram :6.587g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[KBU608(KBU)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/kbu608-kbu-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:42:20</pubDate>
	<description><![CDATA[Product Category: Rectifier bridge     Packing: KBU      Parameter Introduction:VR:800V,IF:6A,VF:1.1V,IR:10uA,IFSM:250A     (Ordering Information):  Product Code: H105027     Minimum packaging: 400pcs      Gross weight/gram :6.587g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MAC97A6(TO-92)]]></title>
	<category domain="http://www.hxymos.com/en/thyristor/">Thyristor</category>
	<link><![CDATA[http://www.hxymos.com/en/thyristor/mac97a6-to-92-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:40:24</pubDate>
	<description><![CDATA[Product Category: Thyristor     Packing: TO-92      Parameter Introduction:Type of thyristor: Unidirectional thyristor, gate trigger voltage (Vgt): 1.5V, holding current (Ih): 10mA, off state peak voltage (Vdrm): 400V,     (Ordering Information):  Product Code: H105309     Minimum packaging: 1000pcs      Gross weight/gram :0.179g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MAC97A8(TO-92)]]></title>
	<category domain="http://www.hxymos.com/en/thyristor/">Thyristor</category>
	<link><![CDATA[http://www.hxymos.com/en/thyristor/mac97a8-to-92-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:40:12</pubDate>
	<description><![CDATA[Product Category: Thyristor     Packing: TO-92      Parameter Introduction:Type of thyristor: Unidirectional thyristor, gate trigger voltage (Vgt): 1.5V, holding current (Ih): 10mA, off state peak voltage (Vdrm): 600V,     (Ordering Information):  Product Code: H105308     Minimum packaging: 1000pcs      Gross weight/gram :0.179g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MCR100-8(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/thyristor/">Thyristor</category>
	<link><![CDATA[http://www.hxymos.com/en/thyristor/mcr100-8-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:40:00</pubDate>
	<description><![CDATA[Product Category: Thyristor     Packing: SOT-89      Parameter Introduction:Type of thyristor: Unidirectional thyristor, gate trigger voltage (Vgt): 0.8V, holding current (Ih): 0.5mA, off state peak voltage (Vdrm): 600V,     (Ordering Information):  Product Code: H105305     Minimum packaging: 1000pcs      Gross weight/gram :0.15g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MCR100-8(TO-92)]]></title>
	<category domain="http://www.hxymos.com/en/thyristor/">Thyristor</category>
	<link><![CDATA[http://www.hxymos.com/en/thyristor/mcr100-8-to-92-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:39:48</pubDate>
	<description><![CDATA[Product Category: Thyristor     Packing: TO-92      Parameter Introduction:Type of thyristor: Unidirectional thyristor, gate trigger voltage (Vgt): 0.8V, holding current (Ih): 0.5mA, off state peak voltage (Vdrm): 600V,     (Ordering Information):  Product Code: H105304     Minimum packaging: 1000pcs      Gross weight/gram :0.179g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MCR100-6(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/thyristor/">Thyristor</category>
	<link><![CDATA[http://www.hxymos.com/en/thyristor/mcr100-6-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:39:36</pubDate>
	<description><![CDATA[Product Category: Thyristor     Packing: SOT-89      Parameter Introduction:Type of thyristor: Unidirectional thyristor, gate trigger voltage (Vgt): 0.8V, holding current (Ih): 0.5mA, off state peak voltage (Vdrm): 400V,     (Ordering Information):  Product Code: H105307     Minimum packaging: 1000pcs      Gross weight/gram :0.15g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MCR100-6(TO-92)]]></title>
	<category domain="http://www.hxymos.com/en/thyristor/">Thyristor</category>
	<link><![CDATA[http://www.hxymos.com/en/thyristor/mcr100-6-to-92-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:39:24</pubDate>
	<description><![CDATA[Product Category: Thyristor     Packing: TO-92      Parameter Introduction:Type of thyristor: Unidirectional thyristor, gate trigger voltage (Vgt): 0.8V, holding current (Ih): 0.5mA, off state peak voltage (Vdrm): 400V,     (Ordering Information):  Product Code: H105306     Minimum packaging: 1000pcs      Gross weight/gram :0.179g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MMBD4148CA(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mmbd4148ca-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:36:28</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SOT-23      Parameter Introduction:IF/A:0.2,VR/V:100,VF/V:1,IR/uA:5,IFSM/A:2,     (Ordering Information):  Product Code: H105020     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MMBT3904DW(SOT-363)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mmbt3904dw-sot-363-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:36:14</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: SOT-363      Parameter Introduction:IC/A:0.2,VCEO/V:40,HFE:100-300,FT/MHz:300,TYPE:NPN,     (Ordering Information):  Product Code: H105018     Minimum packaging: 3000pcs      Gross weight/gram :0.027g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MMBT3906T(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mmbt3906t-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:36:01</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: SOT-523      Parameter Introduction:IC/A:0.2,VCEO/V:40,HFE:100-300,FT/MHz:300,TYPE:PNP,     (Ordering Information):  Product Code: H105009     Minimum packaging: 3000pcs      Gross weight/gram :0.022g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BU406(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bu406-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:35:47</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: TO-220C      Parameter Introduction:IC/A:7,VCEO/V:200,HFE:50-100@1A,5V,FT/MHz:10,TYPE:NPN,     (Ordering Information):  Product Code: H105259     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[2SC2073(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/2sc2073-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:35:34</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: TO-220C      Parameter Introduction:IC/A:1.5,VCEO/V:150,HFE:40-140@0.5A,10V,FT/MHz:4,TYPE:NPN,     (Ordering Information):  Product Code: H105258     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[2SD880(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/2sd880-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:35:21</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: TO-220C      Parameter Introduction:IC/A:3,VCEO/V:60,HFE:60-300@0.5A,5V,FT/MHz:3,TYPE:NPN,     (Ordering Information):  Product Code: H105257     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MJE2955T(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mje2955t-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:35:07</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: TO-220C      Parameter Introduction:IC/A:10,VCEO/V:60,HFE:20-100@-4A,-4V,FT/MHz:2,TYPE:PNP,     (Ordering Information):  Product Code: H105256     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MJE3055T(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mje3055t-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:34:54</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: TO-220C      Parameter Introduction:IC/A:10,VCEO/V:60,HFE:20-100@4A,4V,FT/MHz:2,TYPE:NPN,     (Ordering Information):  Product Code: H105255     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[A940(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/a940-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:34:41</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: TO-220C      Parameter Introduction:IC/A:1.5,VCEO/V:150,HFE:40-140@-0.5A,-10V,FT/MHz:4,TYPE:PNP,     (Ordering Information):  Product Code: H105254     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BD243C(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bd243c-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:34:27</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: TO-220C      Parameter Introduction:IC/A:6,VCEO/V:100,HFE:15@3A,4V,FT/MHz:3,TYPE:NPN,     (Ordering Information):  Product Code: H105252     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BD244C(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bd244c-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:34:13</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: TO-220C      Parameter Introduction:IC/A:6,VCEO/V:100,HFE:15@-3A,-4V,FT/MHz:3,TYPE:PNP,     (Ordering Information):  Product Code: H105251     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[TIP31C(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/tip31c-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:34:00</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: TO-220C      Parameter Introduction:IC/A:3,VCEO/V:100,HFE:15-75@3A,-4V,FT/MHz:3,TYPE:NPN,     (Ordering Information):  Product Code: H105244     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[TIP32C(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/tip32c-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:33:46</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: TO-220C      Parameter Introduction:IC/A:3,VCEO/V:100,HFE:15-75@-6A,-4V,FT/MHz:3,TYPE:PNP,     (Ordering Information):  Product Code: H105243     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[TIP132(TO-220S)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/tip132-to-220s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:33:33</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: TO-220S      Parameter Introduction:IC/A:8,VCEO/V:100,HFE:1k-15K@-4A,-4V,TYPE:NPN,     (Ordering Information):  Product Code: H105248     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[TIP137(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/tip137-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:33:20</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: TO-220C      Parameter Introduction:IC/A:8,VCEO/V:100,HFE:1k-15K@4A,4V,TYPE:PNP,     (Ordering Information):  Product Code: H105247     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[TIP142T(TO-220S)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/tip142t-to-220s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:33:06</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: TO-220S      Parameter Introduction:IC/A:10,VCEO/V:100,HFE:1k@5A,4V,TYPE:NPN,     (Ordering Information):  Product Code: H105246     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[TIP147(TO-220S)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/tip147-to-220s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:32:52</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: TO-220S      Parameter Introduction:IC/A:10,VCEO/V:100,HFE:1k-12K@-5A,-4V,TYPE:PNP,     (Ordering Information):  Product Code: H105245     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[TIP122(TO-220S)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/tip122-to-220s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:32:39</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: TO-220S      Parameter Introduction:IC/A:5,VCEO/V:100,HFE:1K-12K@3A,3V,TYPE:NPN,     (Ordering Information):  Product Code: H105250     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[TIP127(TO-220S)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/tip127-to-220s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:32:26</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: TO-220S      Parameter Introduction:IC/A:5,VCEO/V:100,HFE:1K-12K@-3A,-3V,TYPE:PNP,     (Ordering Information):  Product Code: H105249     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCXT5551(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/hcxt5551-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:32:12</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: SOT-89      Parameter Introduction:IC/A:0.6,VCEO/V:160,HFE:100-300,FT/MHz:100,TYPE:NPN,     (Ordering Information):  Product Code: H105204     Minimum packaging: 1000pcs      Gross weight/gram :0.15g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH951-50P(LSR-P)]]></title>
	<category domain="http://www.hxymos.com/en/current-sensor/">Current sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/current-sensor/ah951-50p-lsr-p-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:29:29</pubDate>
	<description><![CDATA[Product Category: Current sensor     Packing: LSR-P      Parameter Introduction:Working voltage: 4.5-5.5V, static output voltage: 2.5/V, sensitivity: ± 50- ± 200AmV/Gauss, output bandwidth: 65KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105195     Minimum packaging: 500pcs      Gross weight/gram :4.79g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH951-40P(LSR-P)]]></title>
	<category domain="http://www.hxymos.com/en/current-sensor/">Current sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/current-sensor/ah951-40p-lsr-p-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:29:17</pubDate>
	<description><![CDATA[Product Category: Current sensor     Packing: LSR-P      Parameter Introduction:Working voltage: 4.5-5.5V, static output voltage: 2.5/V, sensitivity: ± 50- ± 200AmV/Gauss, output bandwidth: 65KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105194     Minimum packaging: 500pcs      Gross weight/gram :4.79g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH951-32P(LSR-P)]]></title>
	<category domain="http://www.hxymos.com/en/current-sensor/">Current sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/current-sensor/ah951-32p-lsr-p-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:29:06</pubDate>
	<description><![CDATA[Product Category: Current sensor     Packing: LSR-P      Parameter Introduction:Working voltage: 4.5-5.5V, static output voltage: 2.5/V, sensitivity: ± 50- ± 200AmV/Gauss, output bandwidth: 65KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105193     Minimum packaging: 500pcs      Gross weight/gram :4.79g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH951-20P(LSR-P)]]></title>
	<category domain="http://www.hxymos.com/en/current-sensor/">Current sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/current-sensor/ah951-20p-lsr-p-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:28:53</pubDate>
	<description><![CDATA[Product Category: Current sensor     Packing: LSR-P      Parameter Introduction:Working voltage: 4.5-5.5V, static output voltage: 2.5/V, sensitivity: ± 50- ± 200AmV/Gauss, output bandwidth: 65KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105192     Minimum packaging: 500pcs      Gross weight/gram :4.79g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH951-16P(LSR-P)]]></title>
	<category domain="http://www.hxymos.com/en/current-sensor/">Current sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/current-sensor/ah951-16p-lsr-p-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:28:42</pubDate>
	<description><![CDATA[Product Category: Current sensor     Packing: LSR-P      Parameter Introduction:Working voltage: 4.5-5.5V, static output voltage: 2.5/V, sensitivity: ± 50- ± 200AmV/Gauss, output bandwidth: 65KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105191     Minimum packaging: 500pcs      Gross weight/gram :4.79g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH951-10P(LSR-P)]]></title>
	<category domain="http://www.hxymos.com/en/current-sensor/">Current sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/current-sensor/ah951-10p-lsr-p-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:28:30</pubDate>
	<description><![CDATA[Product Category: Current sensor     Packing: LSR-P      Parameter Introduction:Working voltage: 4.5-5.5V, static output voltage: 2.5/V, sensitivity: ± 50- ± 200AmV/Gauss, output bandwidth: 65KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105190     Minimum packaging: 500pcs      Gross weight/gram :4.79g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HLSR50-P(LSR-P)]]></title>
	<category domain="http://www.hxymos.com/en/current-sensor/">Current sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/current-sensor/hlsr50-p-lsr-p-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:28:17</pubDate>
	<description><![CDATA[Product Category: Current sensor     Packing: LSR-P      Parameter Introduction:Working voltage: 4.5-5.5V, static output voltage: 2.5/V, sensitivity: ± 50- ± 200AmV/Gauss, output bandwidth: 65KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105189     Minimum packaging: 500pcs      Gross weight/gram :4.79g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HLSR40-P(LSR-P)]]></title>
	<category domain="http://www.hxymos.com/en/current-sensor/">Current sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/current-sensor/hlsr40-p-lsr-p-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:28:05</pubDate>
	<description><![CDATA[Product Category: Current sensor     Packing: LSR-P      Parameter Introduction:Working voltage: 4.5-5.5V, static output voltage: 2.5/V, sensitivity: ± 50- ± 200AmV/Gauss, output bandwidth: 65KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105188     Minimum packaging: 500pcs      Gross weight/gram :4.79g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HLSR32-P(LSR-P)]]></title>
	<category domain="http://www.hxymos.com/en/current-sensor/">Current sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/current-sensor/hlsr32-p-lsr-p-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:27:54</pubDate>
	<description><![CDATA[Product Category: Current sensor     Packing: LSR-P      Parameter Introduction:Working voltage: 4.5-5.5V, static output voltage: 2.5/V, sensitivity: ± 50- ± 200AmV/Gauss, output bandwidth: 65KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105187     Minimum packaging: 500pcs      Gross weight/gram :4.79g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HLSR20-P(LSR-P)]]></title>
	<category domain="http://www.hxymos.com/en/current-sensor/">Current sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/current-sensor/hlsr20-p-lsr-p-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:27:41</pubDate>
	<description><![CDATA[Product Category: Current sensor     Packing: LSR-P      Parameter Introduction:Working voltage: 4.5-5.5V, static output voltage: 2.5/V, sensitivity: ± 50- ± 200AmV/Gauss, output bandwidth: 65KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105186     Minimum packaging: 500pcs      Gross weight/gram :4.79g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HLSR16-P(LSR-P)]]></title>
	<category domain="http://www.hxymos.com/en/current-sensor/">Current sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/current-sensor/hlsr16-p-lsr-p-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:27:30</pubDate>
	<description><![CDATA[Product Category: Current sensor     Packing: LSR-P      Parameter Introduction:Working voltage: 4.5-5.5V, static output voltage: 2.5/V, sensitivity: ± 50- ± 200AmV/Gauss, output bandwidth: 65KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105185     Minimum packaging: 500pcs      Gross weight/gram :4.79g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HLSR10-P(LSR-P)]]></title>
	<category domain="http://www.hxymos.com/en/current-sensor/">Current sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/current-sensor/hlsr10-p-lsr-p-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:27:18</pubDate>
	<description><![CDATA[Product Category: Current sensor     Packing: LSR-P      Parameter Introduction:Working voltage: 4.5-5.5V, static output voltage: 2.5/V, sensitivity: ± 50- ± 200AmV/Gauss, output bandwidth: 65KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105184     Minimum packaging: 500pcs      Gross weight/gram :4.79g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH810S-D(TO-94)]]></title>
	<category domain="http://www.hxymos.com/en/current-sensor/">Current sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/current-sensor/ah810s-d-to-94-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:27:05</pubDate>
	<description><![CDATA[Product Category: Current sensor     Packing: TO-94      Parameter Introduction:Working voltage: 4.5-5.5V, static output voltage: 2.5/V, sensitivity: 1-60mV/Gauss, output bandwidth: 65KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105151     Minimum packaging: 1000pcs      Gross weight/gram :0.175g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH810S-C(TO-94)]]></title>
	<category domain="http://www.hxymos.com/en/current-sensor/">Current sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/current-sensor/ah810s-c-to-94-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:26:53</pubDate>
	<description><![CDATA[Product Category: Current sensor     Packing: TO-94      Parameter Introduction:Working voltage: 4.5-5.5V, static output voltage: 2.5/V, sensitivity: 1-60mV/Gauss, output bandwidth: 65KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105150     Minimum packaging: 1000pcs      Gross weight/gram :0.175g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH810S-B(TO-94)]]></title>
	<category domain="http://www.hxymos.com/en/current-sensor/">Current sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/current-sensor/ah810s-b-to-94-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:26:42</pubDate>
	<description><![CDATA[Product Category: Current sensor     Packing: TO-94      Parameter Introduction:Working voltage: 4.5-5.5V, static output voltage: 2.5/V, sensitivity: 1-60mV/Gauss, output bandwidth: 65KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105149     Minimum packaging: 1000pcs      Gross weight/gram :0.175g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH810S-A(TO-94)]]></title>
	<category domain="http://www.hxymos.com/en/current-sensor/">Current sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/current-sensor/ah810s-a-to-94-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:26:30</pubDate>
	<description><![CDATA[Product Category: Current sensor     Packing: TO-94      Parameter Introduction:Working voltage: 4.5-5.5V, static output voltage: 2.5/V, sensitivity: 1-60mV/Gauss, output bandwidth: 65KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105148     Minimum packaging: 1000pcs      Gross weight/gram :0.175g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH810-D(TO-94)]]></title>
	<category domain="http://www.hxymos.com/en/current-sensor/">Current sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/current-sensor/ah810-d-to-94-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:26:17</pubDate>
	<description><![CDATA[Product Category: Current sensor     Packing: TO-94      Parameter Introduction:Working voltage: 4.5-5.5V, static output voltage: 2.5/V, sensitivity: 1-60mV/Gauss, output bandwidth: 65KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105147     Minimum packaging: 1000pcs      Gross weight/gram :0.175g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH810-C(TO-94)]]></title>
	<category domain="http://www.hxymos.com/en/current-sensor/">Current sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/current-sensor/ah810-c-to-94-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:26:05</pubDate>
	<description><![CDATA[Product Category: Current sensor     Packing: TO-94      Parameter Introduction:Working voltage: 4.5-5.5V, static output voltage: 2.5/V, sensitivity: 1-60mV/Gauss, output bandwidth: 65KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105146     Minimum packaging: 1000pcs      Gross weight/gram :0.175g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH810-B(TO-94)]]></title>
	<category domain="http://www.hxymos.com/en/current-sensor/">Current sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/current-sensor/ah810-b-to-94-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:25:54</pubDate>
	<description><![CDATA[Product Category: Current sensor     Packing: TO-94      Parameter Introduction:Working voltage: 4.5-5.5V, static output voltage: 2.5/V, sensitivity: 1-60mV/Gauss, output bandwidth: 65KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105145     Minimum packaging: 1000pcs      Gross weight/gram :0.175g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH810-A(TO-94)]]></title>
	<category domain="http://www.hxymos.com/en/current-sensor/">Current sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/current-sensor/ah810-a-to-94-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:25:42</pubDate>
	<description><![CDATA[Product Category: Current sensor     Packing: TO-94      Parameter Introduction:Working voltage: 4.5-5.5V, static output voltage: 2.5/V, sensitivity: 1-60mV/Gauss, output bandwidth: 65KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105144     Minimum packaging: 1000pcs      Gross weight/gram :0.175g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY30G25DF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy30g25df-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:20:15</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN3X3-8L      Parameter Introduction:ID/A:25,VDSS/V:30,RDON/mR:12,VGS/V:20,TYPE:N+P,     (Ordering Information):  Product Code: H105026     Minimum packaging: 5000pcs      Gross weight/gram :0.065g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXYG130N06D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxyg130n06d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:20:01</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:ID/A:130,VDSS/V:60,RDON/mR:3,VGS/V:20,TYPE:N,     (Ordering Information):  Product Code: H105004     Minimum packaging: 2500pcs      Gross weight/gram :0.385g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY6510B50PG(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hxy6510b50pg-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:19:47</pubDate>
	<description><![CDATA[This linear regulator (LDO) has a stable output current of 0.15 amperes, ensuring reliable power supply for various electronic devices. Its output voltage is stable at 5 volts, while the input voltage range is wide, up to 65 volts, to meet the needs of different power supply environments. The static current is as low as 4 microamperes, greatly improving energy efficiency and reducing heat generation, making it suitable for applications that require high energy efficiency ratios. This LDO adopts a compact design that is easy to integrate into circuit boards, suitable for various consumer electronic products and portable devices that require stable voltage supply, providing developers with flexible and stable power solutions.]]></description>
</item>
<item>
	<title><![CDATA[HXYJ11N65D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxyj11n65d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:19:33</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:ID/A:22,VDSS/V:650,RDON/mR:380,VGS/V:30,TYPE:N,     (Ordering Information):  Product Code: H104994     Minimum packaging: 2500pcs      Gross weight/gram :0.385g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY40P04NF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy40p04nf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:19:19</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN5X6-8L      Parameter Introduction:ID/A:40,VDSS/V:40,RDON/mR:10,VGS/V:20,TYPE:P,     (Ordering Information):  Product Code: H104988     Minimum packaging: 5000pcs      Gross weight/gram :0.125g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY40P06DF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy40p06df-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:19:05</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN3X3-8L      Parameter Introduction:ID/A:40,VDSS/V:60,RDON/mR:24,VGS/V:20,TYPE:P,     (Ordering Information):  Product Code: H104991     Minimum packaging: 5000pcs      Gross weight/gram :0.065g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY160N03D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy160n03d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:18:51</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:ID/A:160,VDSS/V:30,RDON/mR:1.6,VGS/V:20,TYPE:N,     (Ordering Information):  Product Code: H105232     Minimum packaging: 2500pcs      Gross weight/gram :0.385g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY50N20P(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy50n20p-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:18:37</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-220C      Parameter Introduction:ID/A:50,VDSS/V:200,RDON/mR:50,VGS/V:20,TYPE:N,     (Ordering Information):  Product Code: H107811     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY80P06D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy80p06d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:18:23</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:ID/A:80,VDSS/V:60,RDON/mR:11,VGS/V:20,TYPE:P,     (Ordering Information):  Product Code: H104989     Minimum packaging: 2500pcs      Gross weight/gram :0.385g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HD6355(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6355-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:18:08</pubDate>
	<description><![CDATA[The HD6355 field-effect transistor (MOSFET) is packaged in TO-252-2L and supports up to 50A drain current and 30V drain source voltage, with a low on resistance of 9.5m Ω. This P-channel MOSFET performs well at a gate source voltage of 20V and is suitable for efficient power management and signal control circuits. It is the preferred component for pursuing high performance and reliability.]]></description>
</item>
<item>
	<title><![CDATA[4N50(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/4n50-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:17:54</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:ID/A:4,VDSS/V:500,RDON/mR:2.4,VGS/V:30,TYPE:N,     (Ordering Information):  Product Code: H105003     Minimum packaging: 2500pcs      Gross weight/gram :0.385g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY4611S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4611s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:17:40</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOP-8      Parameter Introduction:ID/A:7,VDSS/V:30,RDON/mR:25,VGS/V:20,TYPE:N+P,     (Ordering Information):  Product Code: H105017     Minimum packaging: 3000或2500pcs      Gross weight/gram :0.13g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY80P06NF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy80p06nf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:17:26</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN5X6-8L      Parameter Introduction:ID/A:80,VDSS/V:60,RDON/mR:12,VGS/V:20,TYPE:P,     (Ordering Information):  Product Code: H104990     Minimum packaging: 5000pcs      Gross weight/gram :0.125g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY2300BI(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy2300bi-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:17:12</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:ID/A:3,VDSS/V:20,RDON/mR:46,VGS/V:12,TYPE:N,     (Ordering Information):  Product Code: H103722     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY150N03D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy150n03d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:16:58</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:ID/A:150,VDSS/V:30,RDON/mR:1.5,VGS/V:20,TYPE:N,     (Ordering Information):  Product Code: H105230     Minimum packaging: 2500pcs      Gross weight/gram :0.385g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY5P04MI(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy5p04mi-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:16:45</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23-3L      Parameter Introduction:ID/A:5,VDSS/V:40,RDON/mR:45,VGS/V:20,TYPE:P,     (Ordering Information):  Product Code: H105012     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY3402BI(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3402bi-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:16:31</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:ID/A:2,VDSS/V:30,RDON/mR:86,VGS/V:20,TYPE:N,     (Ordering Information):  Product Code: H104997     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY4G03LI(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4g03li-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:16:17</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23-6L      Parameter Introduction:ID/A:4,VDSS/V:30,RDON/mR:29,VGS/V:20,TYPE:N+P,     (Ordering Information):  Product Code: H105005     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY3P06MI(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3p06mi-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:16:03</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23-3L      Parameter Introduction:ID/A:3,VDSS/V:60,RDON/mR:115,VGS/V:20,TYPE:P,     (Ordering Information):  Product Code: H104993     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY6P04MI(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy6p04mi-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:15:49</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23-3L      Parameter Introduction:ID/A:6,VDSS/V:40,RDON/mR:34,VGS/V:20,TYPE:P,     (Ordering Information):  Product Code: H107773     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY60N02DF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy60n02df-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:15:35</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN3X3-8L      Parameter Introduction:ID/A:60,VDSS/V:20,RDON/mR:4,VGS/V:12,TYPE:N,     (Ordering Information):  Product Code: H105016     Minimum packaging: 5000pcs      Gross weight/gram :0.065g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY6005MI(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy6005mi-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:15:21</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23-3L      Parameter Introduction:ID/A:5,VDSS/V:60,RDON/mR:40,VGS/V:20,TYPE:N,     (Ordering Information):  Product Code: H104156     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY130N04NF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy130n04nf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:15:07</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN5X6-8L      Parameter Introduction:ID/A:100,VDSS/V:40,RDON/mR:2.8,VGS/V:20,TYPE:N,     (Ordering Information):  Product Code: H105002     Minimum packaging: 5000pcs      Gross weight/gram :0.125g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY18N20D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy18n20d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:14:53</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:ID/A:18,VDSS/V:200,RDON/mR:180,VGS/V:20,TYPE:N,     (Ordering Information):  Product Code: H103735     Minimum packaging: 2500pcs      Gross weight/gram :0.385g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY60N02BD(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy60n02bd-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:14:39</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:ID/A:60,VDSS/V:20,RDON/mR:5,VGS/V:12,TYPE:N,     (Ordering Information):  Product Code: H104363     Minimum packaging: 2500pcs      Gross weight/gram :0.385g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HD6359(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6359-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:14:25</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:ID/A:70,VDSS/V:30,RDON/mR:7,VGS/V:20,TYPE:P,     (Ordering Information):  Product Code: H104490     Minimum packaging: 2500pcs      Gross weight/gram :0.385g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY5P03SI(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy5p03si-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:14:11</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-89      Parameter Introduction:ID/A:5,VDSS/V:30,RDON/mR:50,VGS/V:12,TYPE:P,     (Ordering Information):  Product Code: H107774     Minimum packaging: 1000pcs      Gross weight/gram :0.15g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY4953AS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4953as-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:13:57</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOP-8      Parameter Introduction:ID/A:5.3,VDSS/V:30,RDON/mR:35,VGS/V:20,TYPE:P+P,     (Ordering Information):  Product Code: H104050     Minimum packaging: 3000或2500pcs      Gross weight/gram :0.13g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY30N03D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy30n03d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:13:43</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:ID/A:30,VDSS/V:30,RDON/mR:9,VGS/V:20,TYPE:N,     (Ordering Information):  Product Code: H105228     Minimum packaging: 2500pcs      Gross weight/gram :0.385g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY3134KI(SOT-723)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3134ki-sot-723-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:13:29</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-723      Parameter Introduction:ID/A:1.2,VDSS/V:20,RDON/mR:150,VGS/V:12,TYPE:N,     (Ordering Information):  Product Code: H105014     Minimum packaging: 3000pcs      Gross weight/gram :0.007g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY3420I(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3420i-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:13:15</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:ID/A:6,VDSS/V:20,RDON/mR:22,VGS/V:12,TYPE:N,     (Ordering Information):  Product Code: H107764     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY80N06BD(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy80n06bd-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:13:01</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:ID/A:80,VDSS/V:60,RDON/mR:6.5,VGS/V:20,TYPE:N,     (Ordering Information):  Product Code: H104445     Minimum packaging: 2500pcs      Gross weight/gram :0.385g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY60P02DF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy60p02df-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:12:47</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN3X3-8L      Parameter Introduction:ID/A:60,VDSS/V:20,RDON/mR:7,VGS/V:12,TYPE:P,     (Ordering Information):  Product Code: H105015     Minimum packaging: 5000pcs      Gross weight/gram :0.065g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY3415BI(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3415bi-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:12:33</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:ID/A:5,VDSS/V:20,RDON/mR:30,VGS/V:10,TYPE:P,     (Ordering Information):  Product Code: H103732     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY3419ADF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3419adf-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:12:19</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN3X3-8L      Parameter Introduction:ID/A:55,VDSS/V:30,RDON/mR:8,VGS/V:20,TYPE:P,     (Ordering Information):  Product Code: H103721     Minimum packaging: 5000pcs      Gross weight/gram :0.065g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY70N04NF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy70n04nf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:12:05</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN5X6-8L      Parameter Introduction:ID/A:70,VDSS/V:40,RDON/mR:7.5,VGS/V:20,TYPE:N,     (Ordering Information):  Product Code: H105234     Minimum packaging: 5000pcs      Gross weight/gram :0.125g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[NVMFD5853NLA(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvmfd5853nla-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:11:51</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN5X6-8L      Parameter Introduction:ID/A:70,VDSS/V:40,RDON/mR:6.5,VGS/V:20,TYPE:N,     (Ordering Information):  Product Code: H104995     Minimum packaging: 5000pcs      Gross weight/gram :0.125g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY15N10D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy15n10d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:11:37</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:ID/A:15,VDSS/V:100,RDON/mR:100,VGS/V:20,TYPE:N,     (Ordering Information):  Product Code: H104346     Minimum packaging: 2500pcs      Gross weight/gram :0.385g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY3415AI(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3415ai-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:11:23</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:ID/A:5,VDSS/V:20,RDON/mR:30,TYPE:P,     (Ordering Information):  Product Code: H103742     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY20P09MI(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy20p09mi-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:11:09</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23-3L      Parameter Introduction:ID/A:9,VDSS/V:20,RDON/mR:13,VGS/V:12,TYPE:P,     (Ordering Information):  Product Code: H107885     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[FQD2N60CTM(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fqd2n60ctm-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:10:55</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:ID/A:2,VDSS/V:600,RDSS/mR:3700,VGS:30,TYPE:N,     (Ordering Information):  Product Code: H105299     Minimum packaging: 2500pcs      Gross weight/gram :0.385g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[FQD5N60CTM(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fqd5n60ctm-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:10:41</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:ID/A:2.8,VDSS/V:600,RDSS/mR:2500,VGS:30,TYPE:N,     (Ordering Information):  Product Code: H105295     Minimum packaging: 2500pcs      Gross weight/gram :0.385g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[IRF730PBF(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf730pbf-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:10:27</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-220C      Parameter Introduction:ID/A:5.5,VDSS/V:400,RDSS/mR:920,VGS:30,TYPE:N,     (Ordering Information):  Product Code: H105289     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[IRF830PBF(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf830pbf-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:10:13</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-220C      Parameter Introduction:ID/A:4.5,VDSS/V:500,RDSS/mR:1200,VGS:30,TYPE:N,     (Ordering Information):  Product Code: H105288     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSTP75NF75(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hstp75nf75-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:09:59</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-220C      Parameter Introduction:ID/A:96,VDSS/V:80,RDON/mR:6.2mΩ@10V,40A,VGS/V:20,TYPE:N,     (Ordering Information):  Product Code: H105293     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HIRF530NPBF(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hirf530npbf-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:09:45</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-220C      Parameter Introduction:ID/A:17,VDSS/V:100,RDON/mR:80mΩ@10V,8A,VGS/V:20,TYPE:N,     (Ordering Information):  Product Code: H105292     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HIRFZ44NPBF(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hirfz44npbf-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 04:09:31</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-220C      Parameter Introduction:ID/A:60,VDSS/V:60,RDON/mR:12mΩ@10V,25A,VGS/V:20,TYPE:N,     (Ordering Information):  Product Code: H105286     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[FR207(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/fr207-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:52:50</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SOD-123FL      Parameter Introduction:IF/A:2,VR/V:1000,VF/V:1.3,IR/uA:5,IFSM/A:50,     (Ordering Information):  Product Code: H107765     Minimum packaging: 3000pcs      Gross weight/gram :0.039g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MBRB10200CT(TO-263)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mbrb10200ct-to-263-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:52:37</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-263      Parameter Introduction:IF/A:10,VR/V:200,VF/V:1.1,IR/uA:50,IFSM/A:120,     (Ordering Information):  Product Code: H104996     Minimum packaging: 800pcs      Gross weight/gram :1.719g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[B530C(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/b530c-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:52:23</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SMC      Parameter Introduction:IF/A:5,VR/V:30,VF/V:0.55,IR/uA:500,IFSM/A:100,     (Ordering Information):  Product Code: H105024     Minimum packaging: 3000pcs      Gross weight/gram :0.356g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SS510BF(SMBF)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss510bf-smbf-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:52:10</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SMB      Parameter Introduction:IF/A:5,VR/V:100,VF/V:0.85,IR/uA:20,IFSM/A:120,     (Ordering Information):  Product Code: H105231     Minimum packaging: 3000pcs      Gross weight/gram :0.191g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MBR0560(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mbr0560-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:51:56</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SOD-123      Parameter Introduction:IF/A:0.5,VR/V:60,VF/V:0.7,IR/uA:80,IFSM/A:5.5,     (Ordering Information):  Product Code: H102448     Minimum packaging: 3000pcs      Gross weight/gram :0.035g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[ES2JW(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/es2jw-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:51:43</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SOD-123FL      Parameter Introduction:IF/A:2,VR/V:600,VF/V:1.7,IR/uA:5,IFSM/A:50,     (Ordering Information):  Product Code: H102462     Minimum packaging: 3000pcs      Gross weight/gram :0.039g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[1N4007F(SMAF)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/1n4007f-smaf-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:51:30</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SMAF      Parameter Introduction:IF/A:1,VR/V:1000,VF/V:1,IR/uA:5,IFSM/A:30,     (Ordering Information):  Product Code: H102551     Minimum packaging: 10000pcs      Gross weight/gram :0.063g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SS1045(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss1045-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:51:16</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SMC      Parameter Introduction:IF/A:10,VR/V:45,VF/V:0.65,     (Ordering Information):  Product Code: H102471     Minimum packaging: 3000pcs      Gross weight/gram :0.356g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[ES3J(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/es3j-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:51:03</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SMB      Parameter Introduction:IF/A:3,VR/V:600,VF/V:1.7,IR/uA:5,IFSM/A:80,     (Ordering Information):  Product Code: H102469     Minimum packaging: 3000pcs      Gross weight/gram :0.191g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MBR0540WS(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mbr0540ws-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:50:49</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SOD-323      Parameter Introduction:IF/A:0.5,VR/V:40,VF/V:0.6,IR/uA:5,IFSM/A:2,     (Ordering Information):  Product Code: H105019     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SK14(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/sk14-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:50:36</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SOD-123FL      Parameter Introduction:IF/A:1,VR/V:40,VF/V:0.55,IR/uA:200,     (Ordering Information):  Product Code: H102592     Minimum packaging: 3000pcs      Gross weight/gram :0.039g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SS24F(SMAF)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss24f-smaf-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:50:22</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SMAF      Parameter Introduction:IF/A:2,VR/V:40,VF/V:0.55,IR/uA:100,     (Ordering Information):  Product Code: H102472     Minimum packaging: 10000pcs      Gross weight/gram :0.063g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SS310(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss310-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:50:09</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SMC      Parameter Introduction:IF/A:3,VR/V:100,VF/V:0.85,IR/uA:20,IFSM/A:80,     (Ordering Information):  Product Code: H107940     Minimum packaging: 3000pcs      Gross weight/gram :0.356g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[1N4001(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/1n4001-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:49:55</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SMA      Parameter Introduction:IF/A:1,VR/V:50,VF/V:1,IR/uA:5,IFSM/A:30,     (Ordering Information):  Product Code: H107768     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[S2MF(SMAF)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/s2mf-smaf-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:49:42</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SMAF      Parameter Introduction:IF/A:2,VR/V:1000,VF/V:1,IR/uA:5,IFSM/A:60,     (Ordering Information):  Product Code: H107769     Minimum packaging: 10000pcs      Gross weight/gram :0.063g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[ES1J(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/es1j-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:49:29</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SOD-123FL      Parameter Introduction:IF/A:1,VR/V:600,VF/V:1.7,IR/uA:5,IFSM/A:30,     (Ordering Information):  Product Code: H107767     Minimum packaging: 3000pcs      Gross weight/gram :0.039g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[FR104W(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/fr104w-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:49:15</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SOD-123FL      Parameter Introduction:IF/A:1,VR/V:400,VF/V:1.3,IR/uA:5,IFSM/A:30,     (Ordering Information):  Product Code: H105241     Minimum packaging: 3000pcs      Gross weight/gram :0.039g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SS14F(SMAF)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss14f-smaf-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:49:02</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SMAF      Parameter Introduction:IF/A:1,VR/V:40,VF/V:0.55,IR/uA:500,IFSM/A:30,     (Ordering Information):  Product Code: H104992     Minimum packaging: 10000pcs      Gross weight/gram :0.063g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[1N4007(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/1n4007-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:48:48</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SMA      Parameter Introduction:IF/A:1,VR/V:1000,VF/V:1,IR/uA:5,IFSM/A:30,     (Ordering Information):  Product Code: H102545     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[S5M(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/s5m-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:48:35</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SMB      Parameter Introduction:IF/A:5,VR/V:1000,VF/V:1.1,IR/uA:5,IFSM/A:120,     (Ordering Information):  Product Code: H107766     Minimum packaging: 3000pcs      Gross weight/gram :0.191g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SS34F(SMAF)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss34f-smaf-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:48:08</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SMAF      Parameter Introduction:IF/A:3,VR/V:40,VF/V:0.55,IR/uA:500,     (Ordering Information):  Product Code: H102464     Minimum packaging: 10000pcs      Gross weight/gram :0.063g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[1SS315(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/1ss315-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:47:54</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SOD-323      Parameter Introduction:IF/A:0.38,VR/V:40,VF/V:0.6,IR/uA:5,IFSM/A:2,     (Ordering Information):  Product Code: H102461     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[ES3J(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/es3j-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:47:41</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SMC      Parameter Introduction:IF/A:3,VR/V:600,VF/V:1.7,IR/uA:10,IFSM/A:100,     (Ordering Information):  Product Code: H102468     Minimum packaging: 3000pcs      Gross weight/gram :0.356g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MBRF20200CT(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mbrf20200ct-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:47:27</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-220F      Parameter Introduction:IF:20A,VR:200V,VF:1.2V@20A,IR:100uA@200V,     (Ordering Information):  Product Code: H107763     Minimum packaging: 50pcs      Gross weight/gram :2.436g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MBRF20150CT(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mbrf20150ct-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:47:14</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-220F      Parameter Introduction:IF:20A,VR:150V,VF:1.1V@20A,IR:100uA@150V,     (Ordering Information):  Product Code: H107762     Minimum packaging: 50pcs      Gross weight/gram :2.436g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MBRF10200CT(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mbrf10200ct-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:47:00</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-220F      Parameter Introduction:IF:10A,VR:200V,VF:1.2V@10A,IR:100uA@200V,     (Ordering Information):  Product Code: H107761     Minimum packaging: 50pcs      Gross weight/gram :2.436g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MBRF10100CT(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mbrf10100ct-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:46:47</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-220F      Parameter Introduction:IF:10A,VR:100V,VF:1V@10A,IR:100uA@100V,     (Ordering Information):  Product Code: H107760     Minimum packaging: 50pcs      Gross weight/gram :2.436g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MBR10100CT(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mbr10100ct-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:46:34</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-220C      Parameter Introduction:IF:10A,VR:100V,VF:0.77V@5A,IR:2uA@100V,     (Ordering Information):  Product Code: H105280     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MBR10150CT(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mbr10150ct-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:46:20</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-220C      Parameter Introduction:IF:10A,VR:150V,VF:0.8V@5A,IR:2uA@150V,     (Ordering Information):  Product Code: H105279     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MBR10200CT(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mbr10200ct-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:46:07</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-220C      Parameter Introduction:IF:10A,VR:200V,VF:0.84V@5A,IR:1uA@200V,     (Ordering Information):  Product Code: H105278     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MBR1045CT(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mbr1045ct-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:45:53</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-220C      Parameter Introduction:IF:10A,VR:45V,VF:0.52V@5A,IR:20uA@45V,     (Ordering Information):  Product Code: H105277     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MBR20100CT(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mbr20100ct-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:45:40</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-220C      Parameter Introduction:IF:20A,VR:100V,VF:0.85V@20A,IR:20uA@100V,     (Ordering Information):  Product Code: H105276     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MBR20150CT(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mbr20150ct-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:45:26</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-220C      Parameter Introduction:IF:20A,VR:150V,VF:0.92V@20A,IR:20uA@150V,     (Ordering Information):  Product Code: H105275     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MBR20200CT(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mbr20200ct-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:45:13</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-220C      Parameter Introduction:IF:20A,VR:200V,VF:0.92V@20A,IR:20uA@200V,     (Ordering Information):  Product Code: H105274     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MBR2045CT(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mbr2045ct-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:45:00</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-220C      Parameter Introduction:IF:20A,VR:45VV,VF:0.6V@20A,IR:100uA@45VV,     (Ordering Information):  Product Code: H105273     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MBR30100CT(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mbr30100ct-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:44:46</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-220C      Parameter Introduction:IF:30A,VR:100V,VF:0.8V@15A,IR:100uA@100V,     (Ordering Information):  Product Code: H105272     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MBR3045CT(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mbr3045ct-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:44:33</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-220C      Parameter Introduction:IF:30A,VR:45V,VF:0.48V@15A,IR:40uA@45V,     (Ordering Information):  Product Code: H105271     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MBR40100PT(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mbr40100pt-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:44:19</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-247      Parameter Introduction:IF:40A,VR:100V,VF:0.85V@40A,IR:20uA@100V,     (Ordering Information):  Product Code: H105270     Minimum packaging: 30pcs      Gross weight/gram :9.295g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MURF1620CT(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/murf1620ct-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:44:06</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-220F      Parameter Introduction:IF:16A,VR:200V,VF:1V@8A,IR:10uA@200V,     (Ordering Information):  Product Code: H105269     Minimum packaging: 50pcs      Gross weight/gram :2.436g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MURF1040CT(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/murf1040ct-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:43:52</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-220F      Parameter Introduction:IF:10A,VR:400V,VF:1.4V@5A,IR:1uA@400V,     (Ordering Information):  Product Code: H105260     Minimum packaging: 50pcs      Gross weight/gram :2.436g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MUR1640CT(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mur1640ct-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:43:39</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-220C      Parameter Introduction:IF:16A,VR:400V,VF:1.4V@8A,IR:1uA@400V,     (Ordering Information):  Product Code: H105268     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MUR1660CT(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mur1660ct-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:43:25</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-220C      Parameter Introduction:IF:16A,VR:600V,VF:1.75V@8A,IR:5uA@600V,     (Ordering Information):  Product Code: H105267     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MUR2040CT(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mur2040ct-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:43:12</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-220C      Parameter Introduction:IF:20A,VR:400V,VF:1.3V@10A,IR:1uA@400V,     (Ordering Information):  Product Code: H105266     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MUR3020PT(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mur3020pt-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:42:58</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-247      Parameter Introduction:IF:30A,VR:200V,VF:1.05V@15A,IR:10uA@200V,     (Ordering Information):  Product Code: H105265     Minimum packaging: 30pcs      Gross weight/gram :9.295g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MUR3040PT(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mur3040pt-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:42:45</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-247      Parameter Introduction:IF:30A,VR:400V,VF:1.7V@15A,IR:200uA@400V,     (Ordering Information):  Product Code: H105264     Minimum packaging: 30pcs      Gross weight/gram :9.295g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MUR4060PT(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mur4060pt-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:42:31</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-247      Parameter Introduction:IF:40A,VR:600V,VF:1.7V@20A,IR:1uA@600V,     (Ordering Information):  Product Code: H105262     Minimum packaging: 30pcs      Gross weight/gram :9.295g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MUR6060PT(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mur6060pt-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:42:18</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-247      Parameter Introduction:IF:60A,VR:600V,VF:1.59V@30A,IR:1uA@600V,     (Ordering Information):  Product Code: H105261     Minimum packaging: 30pcs      Gross weight/gram :9.295g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MUR3060PT(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mur3060pt-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:42:04</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: TO-247      Parameter Introduction:IF:30A,VR:600V,VF:1.59V@15A,IR:1uA@600V,     (Ordering Information):  Product Code: H105263     Minimum packaging: 30pcs      Gross weight/gram :9.295g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[DSS210(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/dss210-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:41:51</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SOD-123FL      Parameter Introduction:IF/A:2,VR/V:100,VF/V:0.85,IR/uA:20,     (Ordering Information):  Product Code: H105205     Minimum packaging: 3000pcs      Gross weight/gram :0.039g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCC6207MST(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/hcc6207mst-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:36:03</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Operating voltage/V: 2.5-5.5V, reverse protection voltage/V: -0.3, magnetic operating point/Gs: ± 19, magnetic release point/Gs: ± 11, operating temperature: -40 to 150 ℃,     (Ordering Information):  Product Code: H105124     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSS41F(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/hss41f-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:35:51</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage/V: 3.0-60, reverse protection voltage/V: -60, magnetic working point/Gs: 45, magnetic release point/Gs: 45, working temperature: -40 to 150 ℃,     (Ordering Information):  Product Code: H105036     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH603UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah603ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:35:39</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 3-12V, static output voltage: Typ 50% Vcc/V, sensitivity: 3.25mV/Gauss, output bandwidth: 25KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105142     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH603SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah603su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:35:27</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 3-12V, static output voltage: Typ 50% Vcc/V, sensitivity: 3.25mV/Gauss, output bandwidth: 25KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105141     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH602UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah602ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:35:15</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 3-12V, static output voltage: Typ 50% Vcc/V, sensitivity: 2.5mV/Gauss, output bandwidth: 25KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105140     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH602SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah602su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:35:02</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 3-12V, static output voltage: Typ 50% Vcc/V, sensitivity: 2.5mV/Gauss, output bandwidth: 25KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105139     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH601UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah601ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:34:49</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 3-12V, static output voltage: Typ 50% Vcc/V, sensitivity: 1.2mV/Gauss, output bandwidth: 25KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105136     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH601SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah601su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:34:37</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 3-12V, static output voltage: Typ 50% Vcc/V, sensitivity: 1.2mV/Gauss, output bandwidth: 25KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105135     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSS49E(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/hss49e-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:34:25</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 3-12V, static output voltage: Typ 50% Vcc/V, sensitivity: 1.2mV/Gauss, output bandwidth: 25KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105138     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSS39ET(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/hss39et-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:34:13</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 3-12V, static output voltage: Typ 50% Vcc/V, sensitivity: 1.2mV/Gauss, output bandwidth: 25KHz, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105137     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH469UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah469ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:34:01</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 2.5-5.5V, reverse protection voltage: -0.3V, magnetic working point: 25GS, magnetic release point: -25Gs, working temperature: -40 to 85 ℃     (Ordering Information):  Product Code: H105134     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH469SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah469su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:33:49</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 2.5-5.5V, reverse protection voltage: -0.3V, magnetic working point: 25GS, magnetic release point: -25Gs, working temperature: -40 to 85 ℃     (Ordering Information):  Product Code: H105133     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH468UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah468ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:33:37</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 2.7-5.5V, reverse protection voltage: -0.3V, magnetic working point: 25GS, magnetic release point: -25Gs, working temperature: -40 to 85 ℃     (Ordering Information):  Product Code: H105132     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH468SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah468su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:33:25</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 2.7-5.5V, reverse protection voltage: -0.3V, magnetic working point: 25GS, magnetic release point: -25Gs, working temperature: -40 to 85 ℃     (Ordering Information):  Product Code: H105131     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH466UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah466ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:33:13</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 2.5-5.5V, reverse protection voltage: -0.3V, magnetic working point: ± 19GS, magnetic release point: ± 11Gs, working temperature: -40 to 85 ℃     (Ordering Information):  Product Code: H105130     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH466SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah466su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:33:01</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 2.5-5.5V, reverse protection voltage: -0.3V, magnetic working point: ± 19GS, magnetic release point: ± 11Gs, working temperature: -40 to 85 ℃     (Ordering Information):  Product Code: H105129     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH465UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah465ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:32:49</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 2.5-5.5V, reverse protection voltage: -0.3V, magnetic working point: 30GS, magnetic release point: 20Gs, working temperature: -40 to 85 ℃     (Ordering Information):  Product Code: H105128     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH465SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah465su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:32:37</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 2.5-5.5V, reverse protection voltage: -0.3V, magnetic working point: 30GS, magnetic release point: 20Gs, working temperature: -40 to 85 ℃     (Ordering Information):  Product Code: H105127     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH464UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah464ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:32:25</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 2.5-5.5V, reverse protection voltage: -0.3V, magnetic working point: ± 30GS, magnetic release point: ± 20Gs, working temperature: -40 to 85 ℃     (Ordering Information):  Product Code: H105126     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH464SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah464su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:32:13</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 2.5-5.5V, reverse protection voltage: -0.3V, magnetic working point: ± 30GS, magnetic release point: ± 20Gs, working temperature: -40 to 85 ℃     (Ordering Information):  Product Code: H105125     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH463UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah463ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:32:01</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 2.5-5.5V, reverse protection voltage: -0.3V, magnetic working point: ± 19GS, magnetic release point: ± 11Gs, working temperature: -40 to 85 ℃     (Ordering Information):  Product Code: H105123     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH463SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah463su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:31:49</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 2.5-5.5V, reverse protection voltage: -0.3V, magnetic working point: ± 19GS, magnetic release point: ± 11Gs, working temperature: -40 to 85 ℃     (Ordering Information):  Product Code: H105122     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH462UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah462ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:31:37</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 2.5-5.5V, reverse protection voltage: -0.3V, magnetic working point: ± 35GS, magnetic release point: ± 20Gs, working temperature: -40 to 85 ℃     (Ordering Information):  Product Code: H105121     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH462SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah462su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:31:25</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 2.5-5.5V, reverse protection voltage: -0.3V, magnetic working point: ± 35GS, magnetic release point: ± 20Gs, working temperature: -40 to 85 ℃     (Ordering Information):  Product Code: H105120     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH452UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah452ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:31:13</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 3.5-40V, reverse protection voltage: -40V, magnetic working point: ± 50GS, magnetic release point: ± 30Gs, working temperature: -40 to 85 ℃     (Ordering Information):  Product Code: H105119     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH452SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah452su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:31:01</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 3.5-40V, reverse protection voltage: -40V, magnetic working point: ± 50GS, magnetic release point: ± 30Gs, working temperature: -40 to 85 ℃     (Ordering Information):  Product Code: H105118     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH451UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah451ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:30:48</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 3.5-40V, reverse protection voltage: -40V, magnetic working point: ± 80GS, magnetic release point: ± 50Gs, working temperature: -40 to 85 ℃     (Ordering Information):  Product Code: H105117     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH451SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah451su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:30:36</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 3.5-40V, reverse protection voltage: -40V, magnetic working point: ± 80GS, magnetic release point: ± 50Gs, working temperature: -40 to 85 ℃     (Ordering Information):  Product Code: H105116     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH712-T(TO-94)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah712-t-to-94-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:30:24</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-94      Parameter Introduction:Working voltage: 3.8-30V, reverse protection voltage: -40V, magnetic working point: 130GS, magnetic release point: -130Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105115     Minimum packaging: 1000pcs      Gross weight/gram :0.175g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH712-S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah712-s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:30:12</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOP-8      Parameter Introduction:Working voltage: 3.8-30V, reverse protection voltage: -40V, magnetic working point: 130GS, magnetic release point: -130Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105114     Minimum packaging: 3000或2500pcs      Gross weight/gram :0.13g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH711-T(TO-94)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah711-t-to-94-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:30:00</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-94      Parameter Introduction:Working voltage: 3.8-30V, reverse protection voltage: -40V, magnetic working point: 75GS, magnetic release point: -75Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105113     Minimum packaging: 1000pcs      Gross weight/gram :0.175g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH711-S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah711-s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:29:48</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOP-8      Parameter Introduction:Working voltage: 3.8-30V, reverse protection voltage: -40V, magnetic working point: 75GS, magnetic release point: -75Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105112     Minimum packaging: 3000或2500pcs      Gross weight/gram :0.13g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH710-T(TO-94)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah710-t-to-94-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:29:36</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-94      Parameter Introduction:Working voltage: 3.8-30V, reverse protection voltage: -40V, magnetic working point: 40GS, magnetic release point: -40Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105111     Minimum packaging: 1000pcs      Gross weight/gram :0.175g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH710-S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah710-s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:29:24</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOP-8      Parameter Introduction:Working voltage: 3.8-30V, reverse protection voltage: -40V, magnetic working point: 40GS, magnetic release point: -40Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105110     Minimum packaging: 3000或2500pcs      Gross weight/gram :0.13g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH702-T(TO-94)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah702-t-to-94-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:29:12</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-94      Parameter Introduction:Working voltage: 3.8-30V, reverse protection voltage: -40V, magnetic working point: 130GS, magnetic release point: -130Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105109     Minimum packaging: 1000pcs      Gross weight/gram :0.175g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH702-S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah702-s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:29:00</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOP-8      Parameter Introduction:Working voltage: 3.8-30V, reverse protection voltage: -40V, magnetic working point: 130GS, magnetic release point: -130Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105108     Minimum packaging: 3000或2500pcs      Gross weight/gram :0.13g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH701-T(TO-94)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah701-t-to-94-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:28:48</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-94      Parameter Introduction:Working voltage: 3.8-30V, reverse protection voltage: -40V, magnetic working point: 75GS, magnetic release point: -75Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105107     Minimum packaging: 1000pcs      Gross weight/gram :0.175g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH701-S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah701-s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:28:37</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOP-8      Parameter Introduction:Working voltage: 3.8-30V, reverse protection voltage: -40V, magnetic working point: 75GS, magnetic release point: -75Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105106     Minimum packaging: 3000或2500pcs      Gross weight/gram :0.13g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH700-T(TO-94)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah700-t-to-94-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:28:25</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-94      Parameter Introduction:Working voltage: 3.8-30V, reverse protection voltage: -40V, magnetic working point: 40GS, magnetic release point: -40Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105105     Minimum packaging: 1000pcs      Gross weight/gram :0.175g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH700-S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah700-s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:28:13</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOP-8      Parameter Introduction:Working voltage: 3.8-30V, reverse protection voltage: -40V, magnetic working point: 40GS, magnetic release point: -40Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105104     Minimum packaging: 3000或2500pcs      Gross weight/gram :0.13g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH546UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah546ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:28:01</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 90GS, magnetic release point: 70Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105103     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH546SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah546su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:27:49</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 90GS, magnetic release point: 70Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105102     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH546SS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah546ss-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:27:37</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 90GS, magnetic release point: 70Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105101     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH545UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah545ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:27:25</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 60GS, magnetic release point: 40Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105100     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH545SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah545su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:27:13</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 60GS, magnetic release point: 40Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105099     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH545SS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah545ss-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:27:01</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 60GS, magnetic release point: 40Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105098     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH544UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah544ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:26:49</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 40GS, magnetic release point: 60Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105097     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH544SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah544su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:26:37</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 40GS, magnetic release point: 60Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105096     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH544SS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah544ss-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:26:25</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 40GS, magnetic release point: 60Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105095     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH543UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah543ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:26:13</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 75GS, magnetic release point: 95Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105094     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH543SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah543su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:26:01</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 75GS, magnetic release point: 95Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105093     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH543SS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah543ss-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:25:49</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 75GS, magnetic release point: 95Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105092     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH512UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah512ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:25:37</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 2.7-31V, reverse protection voltage: -20V, magnetic working point: 25GS, magnetic release point: 11Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105091     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH512SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah512su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:25:25</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 2.7-31V, reverse protection voltage: -20V, magnetic working point: 25GS, magnetic release point: 11Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105090     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH512SS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah512ss-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:25:12</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23      Parameter Introduction:Working voltage: 2.7-31V, reverse protection voltage: -20V, magnetic working point: 25GS, magnetic release point: 11Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105089     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH511UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah511ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:25:00</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 70GS, magnetic release point: 120Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105088     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH511SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah511su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:24:48</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 70GS, magnetic release point: 120Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105087     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH511SS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah511ss-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:24:36</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 70GS, magnetic release point: 120Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105086     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH510UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah510ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:24:24</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 120GS, magnetic release point: 70Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105085     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH510SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah510su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:24:12</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 120GS, magnetic release point: 70Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105084     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH510SS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah510ss-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:24:00</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 120GS, magnetic release point: 70Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105083     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH509UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah509ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:23:48</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 35GS, magnetic release point: 55Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105082     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH509SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah509su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:23:36</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 35GS, magnetic release point: 55Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105081     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH509SS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah509ss-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:23:24</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 35GS, magnetic release point: 55Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105080     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH508UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah508ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:23:12</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: -55GS, magnetic release point: -35Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105079     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH508SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah508su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:23:00</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: -55GS, magnetic release point: -35Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105078     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH508SS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah508ss-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:22:48</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: -55GS, magnetic release point: -35Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105077     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH507UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah507ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:22:36</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 280GS, magnetic release point: 240Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105076     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH507SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah507su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:22:24</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 280GS, magnetic release point: 240Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105075     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH507SS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah507ss-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:22:12</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 280GS, magnetic release point: 240Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105074     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH506UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah506ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:22:00</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 190GS, magnetic release point: 170Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105073     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH506SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah506su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:21:48</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 190GS, magnetic release point: 170Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105072     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH506SS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah506ss-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:21:36</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 190GS, magnetic release point: 170Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105071     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH503UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah503ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:21:24</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 55GS, magnetic release point: 35Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105070     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH503SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah503su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:21:12</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 55GS, magnetic release point: 35Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105069     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH503SS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah503ss-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:21:00</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 55GS, magnetic release point: 35Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105068     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH422UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah422ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:20:48</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 3.5-40V, reverse protection voltage: -0.3V, magnetic working point: 32GS, magnetic release point: 24Gs, working temperature: -40 to 125 ℃     (Ordering Information):  Product Code: H105065     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH422SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah422su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:20:36</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 3.5-40V, reverse protection voltage: -0.3V, magnetic working point: 32GS, magnetic release point: 24Gs, working temperature: -40 to 125 ℃     (Ordering Information):  Product Code: H105064     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH421UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah421ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:20:24</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 3.5-40V, reverse protection voltage: -0.3V, magnetic working point: 60GS, magnetic release point: 40Gs, working temperature: -40 to 125 ℃     (Ordering Information):  Product Code: H105063     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH421SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah421su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:20:11</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 3.5-40V, reverse protection voltage: -0.3V, magnetic working point: 60GS, magnetic release point: 40Gs, working temperature: -40 to 125 ℃     (Ordering Information):  Product Code: H105062     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH542UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah542ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:19:59</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 120GS, magnetic release point: -120Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105060     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH542SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah542su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:19:47</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 120GS, magnetic release point: -120Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105059     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH542SS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah542ss-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:19:35</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 120GS, magnetic release point: -120Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105058     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH541UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah541ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:19:23</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 40GS, magnetic release point: -40Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105057     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH541SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah541su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:19:11</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 40GS, magnetic release point: -40Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105056     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH541SS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah541ss-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:18:59</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 40GS, magnetic release point: -40Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105055     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH505UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah505ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:18:48</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 135GS, magnetic release point: -135Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105054     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH505SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah505su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:18:36</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 135GS, magnetic release point: -135Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105053     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH505SS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah505ss-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:18:23</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 135GS, magnetic release point: -135Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105052     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH504UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah504ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:18:11</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 80GS, magnetic release point: -80Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105051     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH504SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah504su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:18:00</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 80GS, magnetic release point: -80Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105050     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH504SS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah504ss-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:17:48</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 80GS, magnetic release point: -80Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105049     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH502UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah502ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:17:35</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 25GS, magnetic release point: -25Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105048     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH502SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah502su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:17:23</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 25GS, magnetic release point: -25Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105047     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH502SS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah502ss-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:17:11</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 25GS, magnetic release point: -25Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105046     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH501UA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah501ua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:16:59</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 7GS, magnetic release point: -7Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105045     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH501SU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah501su-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:16:47</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 7GS, magnetic release point: -7Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105044     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH501SS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah501ss-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:16:35</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23      Parameter Introduction:Working voltage: 2.7-30V, reverse protection voltage: -20V, magnetic working point: 7GS, magnetic release point: -7Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105043     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH402HUA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah402hua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:16:23</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 3.0-60V, reverse protection voltage: -60V, magnetic working point: 25GS, magnetic release point: -25Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105042     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH402HSU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah402hsu-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:16:11</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 3.0-60V, reverse protection voltage: -60V, magnetic working point: 25GS, magnetic release point: -25Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105041     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH402FUA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah402fua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:15:59</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 3.0-60V, reverse protection voltage: -0.3V, magnetic working point: 25GS, magnetic release point: -25Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105040     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH402FSU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah402fsu-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:15:47</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 3.0-60V, reverse protection voltage: -0.3V, magnetic working point: 25GS, magnetic release point: -25Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105039     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH401FUA(TO-92S)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah401fua-to-92s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:15:35</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: TO-92S      Parameter Introduction:Working voltage: 3.0-60V, reverse protection voltage: -60V, magnetic working point: 45GS, magnetic release point: -45Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105038     Minimum packaging: 1000pcs      Gross weight/gram :0.116g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AH401FSU(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/ah401fsu-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 03:13:42</pubDate>
	<description><![CDATA[Product Category: hall sensor     Packing: SOT-23-3L      Parameter Introduction:Working voltage: 3.0-60V, reverse protection voltage: -60V, magnetic working point: 45GS, magnetic release point: -45Gs, working temperature: -40 to 150 ℃     (Ordering Information):  Product Code: H105037     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HT7550(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7550-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:38:47</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-89      Parameter Introduction:IO/A:0.1,VO/V:5,VI/V:30,IQ/mA:1.5,     (Ordering Information):  Product Code: H105242     Minimum packaging: 1000pcs      Gross weight/gram :0.15g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HLM3480IM3X-3.3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hlm3480im3x-3-3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:38:34</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23      Parameter Introduction:IO/A:0.12,VO/V:3.3,VI/V:30,IQ/mA:0.005,     (Ordering Information):  Product Code: H107884     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AP2125K-1.8TRG1(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ap2125k-1-8trg1-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:38:21</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:1.8,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107883     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AP2125K-2.5TRG1(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ap2125k-2-5trg1-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:38:07</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:2.5,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107938     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AP2125K-3.0TRG1(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ap2125k-3-0trg1-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:37:54</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:3,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107937     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AP2125K-3.3TRE1(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ap2125k-3-3tre1-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:37:41</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:3.3,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107882     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AP2125K-3.6TRG1(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ap2125k-3-6trg1-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:37:27</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:3.6,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107936     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAP2204K-3.0TRG1(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hap2204k-3-0trg1-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:37:14</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:3,VI/V:22,IQ/mA:0.0015,     (Ordering Information):  Product Code: H107935     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAP2204K-3.3TRG1(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hap2204k-3-3trg1-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:37:00</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:3.3,VI/V:22,IQ/mA:0.0015,     (Ordering Information):  Product Code: H107881     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAP2204R-3.0TRG1(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hap2204r-3-0trg1-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:36:47</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-89      Parameter Introduction:IO/A:0.3,VO/V:3,VI/V:22,IQ/mA:0.0015,     (Ordering Information):  Product Code: H107934     Minimum packaging: 1000pcs      Gross weight/gram :0.15g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAP2204R-3.3TRG1(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hap2204r-3-3trg1-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:36:33</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-89      Parameter Introduction:IO/A:0.3,VO/V:3.3,VI/V:22,IQ/mA:0.0015,     (Ordering Information):  Product Code: H107880     Minimum packaging: 1000pcs      Gross weight/gram :0.15g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AP2205-33Y-13(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ap2205-33y-13-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:36:06</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-89      Parameter Introduction:IO/A:0.3,VO/V:3.3,VI/V:24,IQ/mA:0.003,     (Ordering Information):  Product Code: H107879     Minimum packaging: 1000pcs      Gross weight/gram :0.15g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AP2205-50Y-13(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ap2205-50y-13-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:35:53</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-89      Parameter Introduction:IO/A:0.3,VO/V:5,VI/V:24,IQ/mA:0.003,     (Ordering Information):  Product Code: H107878     Minimum packaging: 1000pcs      Gross weight/gram :0.15g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BL9198-12BAPRN(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/bl9198-12baprn-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:35:39</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:1.2,VI/V:6,IQ/mA:0.075,     (Ordering Information):  Product Code: H107932     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BL9198-15BAPRN(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/bl9198-15baprn-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:35:26</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:1.5,VI/V:6,IQ/mA:0.075,     (Ordering Information):  Product Code: H107931     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BL9198-18BAPRN(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/bl9198-18baprn-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:35:12</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:1.8,VI/V:6,IQ/mA:0.075,     (Ordering Information):  Product Code: H107877     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BL9198-25BAPRN(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/bl9198-25baprn-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:34:59</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:2.5,VI/V:6,IQ/mA:0.075,     (Ordering Information):  Product Code: H107930     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BL9198-28BAPRN(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/bl9198-28baprn-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:34:45</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:2.8,VI/V:6,IQ/mA:0.075,     (Ordering Information):  Product Code: H107929     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BL9198-30BAPRN(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/bl9198-30baprn-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:34:32</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:3,VI/V:6,IQ/mA:0.075,     (Ordering Information):  Product Code: H107928     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BL9198-33BAPRN(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/bl9198-33baprn-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:34:18</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:3.3,VI/V:6,IQ/mA:0.075,     (Ordering Information):  Product Code: H107876     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BL9198-36BAPRN(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/bl9198-36baprn-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:34:05</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:3.6,VI/V:6,IQ/mA:0.075,     (Ordering Information):  Product Code: H107927     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MCP1702T-2502E/CB(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mcp1702t-2502e-cb-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:33:52</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23      Parameter Introduction:IO/A:0.3,VO/V:2.5,VI/V:14,IQ/mA:0.0015,     (Ordering Information):  Product Code: H107926     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MCP1702T-2802E/CB(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mcp1702t-2802e-cb-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:33:38</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23      Parameter Introduction:IO/A:0.3,VO/V:2.8,VI/V:14,IQ/mA:0.0015,     (Ordering Information):  Product Code: H107925     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MCP1702T-3002E/CB(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mcp1702t-3002e-cb-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:33:24</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23      Parameter Introduction:IO/A:0.3,VO/V:3,VI/V:14,IQ/mA:0.0015,     (Ordering Information):  Product Code: H107924     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MCP1702T-3302E/CB(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mcp1702t-3302e-cb-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:33:11</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23      Parameter Introduction:IO/A:0.3,VO/V:3.3,VI/V:14,IQ/mA:0.0015,     (Ordering Information):  Product Code: H107875     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MCP1702T-5002E/CB(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mcp1702t-5002e-cb-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:32:57</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23      Parameter Introduction:IO/A:0.3,VO/V:5,VI/V:14,IQ/mA:0.0015,     (Ordering Information):  Product Code: H107874     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MCP1702T-2502E/MB(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mcp1702t-2502e-mb-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:32:44</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-89      Parameter Introduction:IO/A:0.3,VO/V:2.5,VI/V:14,IQ/mA:0.0015,     (Ordering Information):  Product Code: H107923     Minimum packaging: 1000pcs      Gross weight/gram :0.15g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MCP1702T-2802E/MB(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mcp1702t-2802e-mb-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:32:31</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-89      Parameter Introduction:IO/A:0.3,VO/V:2.8,VI/V:14,IQ/mA:0.0015,     (Ordering Information):  Product Code: H107922     Minimum packaging: 1000pcs      Gross weight/gram :0.15g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MCP1702T-3002E/MB(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mcp1702t-3002e-mb-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:32:17</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-89      Parameter Introduction:IO/A:0.3,VO/V:3,VI/V:14,IQ/mA:0.0015,     (Ordering Information):  Product Code: H107921     Minimum packaging: 1000pcs      Gross weight/gram :0.15g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MCP1702T-3302E/MB(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mcp1702t-3302e-mb-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:32:03</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-89      Parameter Introduction:IO/A:0.3,VO/V:3.3,VI/V:14,IQ/mA:0.0015,     (Ordering Information):  Product Code: H107873     Minimum packaging: 1000pcs      Gross weight/gram :0.15g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MCP1702T-5002E/MB(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mcp1702t-5002e-mb-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:31:50</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-89      Parameter Introduction:IO/A:0.3,VO/V:5,VI/V:14,IQ/mA:0.0015,     (Ordering Information):  Product Code: H107872     Minimum packaging: 1000pcs      Gross weight/gram :0.15g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HMCP1703T-2502E/MB(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hmcp1703t-2502e-mb-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:31:36</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-89      Parameter Introduction:IO/A:0.3,VO/V:2.5,VI/V:18,IQ/mA:0.0018,     (Ordering Information):  Product Code: H107920     Minimum packaging: 1000pcs      Gross weight/gram :0.15g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HMCP1703T-2802E/MB(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hmcp1703t-2802e-mb-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:31:23</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-89      Parameter Introduction:IO/A:0.3,VO/V:2.8,VI/V:18,IQ/mA:0.0018,     (Ordering Information):  Product Code: H107919     Minimum packaging: 1000pcs      Gross weight/gram :0.15g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HMCP1703T-3002E/MB(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hmcp1703t-3002e-mb-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:31:10</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-89      Parameter Introduction:IO/A:0.3,VO/V:3,VI/V:18,IQ/mA:0.0018,     (Ordering Information):  Product Code: H107918     Minimum packaging: 1000pcs      Gross weight/gram :0.15g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HMCP1703T-3302E/MB(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hmcp1703t-3302e-mb-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:30:56</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-89      Parameter Introduction:IO/A:0.3,VO/V:3.3,VI/V:18,IQ/mA:0.0018,     (Ordering Information):  Product Code: H107871     Minimum packaging: 1000pcs      Gross weight/gram :0.15g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HMCP1703T-5002E/MB(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hmcp1703t-5002e-mb-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:30:43</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-89      Parameter Introduction:IO/A:0.3,VO/V:5,VI/V:18,IQ/mA:0.0018,     (Ordering Information):  Product Code: H107870     Minimum packaging: 1000pcs      Gross weight/gram :0.15g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HMIC5219-3.0YM5(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hmic5219-3-0ym5-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:30:29</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.45,VO/V:3,VI/V:15,IQ/mA:0.025,     (Ordering Information):  Product Code: H107869     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HMIC5219-5.0YM5(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hmic5219-5-0ym5-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:30:16</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.45,VO/V:5,VI/V:15,IQ/mA:0.025,     (Ordering Information):  Product Code: H107868     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MIC5233-3.0YS(SOT-223)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mic5233-3-0ys-sot-223-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:30:02</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-223      Parameter Introduction:IO/A:0.15,VO/V:3,VI/V:24,IQ/mA:0.002,     (Ordering Information):  Product Code: H107917     Minimum packaging: 1000/2500pcs      Gross weight/gram :0.198g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MIC5233-3.3YS(SOT-223)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mic5233-3-3ys-sot-223-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:29:49</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-223      Parameter Introduction:IO/A:0.15,VO/V:3.3,VI/V:24,IQ/mA:0.002,     (Ordering Information):  Product Code: H107867     Minimum packaging: 1000/2500pcs      Gross weight/gram :0.198g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MIC5233-5.0YS(SOT-223)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mic5233-5-0ys-sot-223-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:29:35</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-223      Parameter Introduction:IO/A:0.15,VO/V:5,VI/V:24,IQ/mA:0.002,     (Ordering Information):  Product Code: H107866     Minimum packaging: 1000/2500pcs      Gross weight/gram :0.198g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MIC5235-3.0YM5(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mic5235-3-0ym5-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:29:22</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.25,VO/V:3,VI/V:24,IQ/mA:0.01,     (Ordering Information):  Product Code: H107916     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MIC5235-3.3YM5(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mic5235-3-3ym5-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:29:07</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.25,VO/V:3.3,VI/V:24,IQ/mA:0.01,     (Ordering Information):  Product Code: H107865     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MIC5235-5.0YM5(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mic5235-5-0ym5-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:28:53</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.25,VO/V:5,VI/V:24,IQ/mA:0.01,     (Ordering Information):  Product Code: H107864     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MIC5255-3.3YM5(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mic5255-3-3ym5-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:28:39</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.25,VO/V:3.3,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107863     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MIC5255-3.0YM5(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mic5255-3-0ym5-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:28:24</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.25,VO/V:3,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107915     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MIC5255-2.8YM5(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mic5255-2-8ym5-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:28:10</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.25,VO/V:2.8,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107914     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MIC5255-2.5YM5(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mic5255-2-5ym5-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:27:55</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.25,VO/V:2.5,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107913     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HNCP114ASN300T1G(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hncp114asn300t1g-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:27:41</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:3,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107912     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HNCP114ASN280T1G(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hncp114asn280t1g-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:27:26</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:2.8,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107911     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HNCP114ASN250T1G(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hncp114asn250t1g-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:27:12</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:2.5,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107910     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HNCP114ASN180T1G(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hncp114asn180t1g-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:26:57</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:1.8,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107862     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HNCP114ASN150T1G(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hncp114asn150t1g-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:26:43</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:1.5,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107909     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HNCP114ASN120T1G(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hncp114asn120t1g-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:26:28</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:1.2,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107908     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[NCP718ASN300T1G(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ncp718asn300t1g-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:26:14</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.25,VO/V:3,VI/V:24,IQ/mA:0.002,     (Ordering Information):  Product Code: H107861     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[NCP718ASN330T1G(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ncp718asn330t1g-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:26:00</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.25,VO/V:3.3,VI/V:24,IQ/mA:0.002,     (Ordering Information):  Product Code: H107860     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[NCP718ASN500T1G(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ncp718asn500t1g-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:25:45</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.25,VO/V:5,VI/V:24,IQ/mA:0.002,     (Ordering Information):  Product Code: H107859     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HRT9013-15GB(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hrt9013-15gb-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:25:31</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.5,VO/V:1.5,VI/V:7,IQ/mA:0.075,     (Ordering Information):  Product Code: H107858     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HRT9013-25GB(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hrt9013-25gb-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:25:16</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.5,VO/V:2.5,VI/V:7,IQ/mA:0.075,     (Ordering Information):  Product Code: H107857     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HRT9013-30GB(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hrt9013-30gb-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:25:02</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.5,VO/V:3,VI/V:7,IQ/mA:0.075,     (Ordering Information):  Product Code: H107856     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[RT9161-25GV(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/rt9161-25gv-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:24:47</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23      Parameter Introduction:IO/A:0.3,VO/V:2.5,VI/V:16,IQ/mA:0.008,     (Ordering Information):  Product Code: H107907     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[RT9161-28GV(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/rt9161-28gv-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:24:33</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23      Parameter Introduction:IO/A:0.3,VO/V:2.8,VI/V:16,IQ/mA:0.008,     (Ordering Information):  Product Code: H107906     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[RT9161-30GV(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/rt9161-30gv-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:24:18</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23      Parameter Introduction:IO/A:0.3,VO/V:3,VI/V:16,IQ/mA:0.008,     (Ordering Information):  Product Code: H107905     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[RT9161-33GV(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/rt9161-33gv-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:24:05</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23      Parameter Introduction:IO/A:0.3,VO/V:3.3,VI/V:16,IQ/mA:0.008,     (Ordering Information):  Product Code: H107855     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[RT9161-36GV(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/rt9161-36gv-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:23:49</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23      Parameter Introduction:IO/A:0.3,VO/V:3.6,VI/V:16,IQ/mA:0.008,     (Ordering Information):  Product Code: H107904     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[RT9161-44GV(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/rt9161-44gv-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:23:35</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23      Parameter Introduction:IO/A:0.3,VO/V:4.4,VI/V:16,IQ/mA:0.008,     (Ordering Information):  Product Code: H107903     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[RT9161-50GV(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/rt9161-50gv-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:23:20</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23      Parameter Introduction:IO/A:0.3,VO/V:5,VI/V:16,IQ/mA:0.008,     (Ordering Information):  Product Code: H107854     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HTPS79336DBVR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/htps79336dbvr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:23:06</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.25,VO/V:3.6,VI/V:6,IQ/mA:0.075,     (Ordering Information):  Product Code: H107902     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HTPS79330DBVR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/htps79330dbvr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:22:51</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.25,VO/V:3,VI/V:6,IQ/mA:0.075,     (Ordering Information):  Product Code: H107901     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HTPS79328DBVR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/htps79328dbvr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:22:37</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.25,VO/V:2.8,VI/V:6,IQ/mA:0.075,     (Ordering Information):  Product Code: H107900     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HTPS79325DBVR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/htps79325dbvr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:22:22</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.25,VO/V:2.5,VI/V:6,IQ/mA:0.075,     (Ordering Information):  Product Code: H107899     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HTPS79318DBVR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/htps79318dbvr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:22:08</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.25,VO/V:1.8,VI/V:6,IQ/mA:0.075,     (Ordering Information):  Product Code: H107853     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HTPS79315DBVR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/htps79315dbvr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:21:53</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.25,VO/V:1.5,VI/V:6,IQ/mA:0.075,     (Ordering Information):  Product Code: H107898     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HTPS79312DBVR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/htps79312dbvr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:21:39</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.25,VO/V:1.2,VI/V:6,IQ/mA:0.075,     (Ordering Information):  Product Code: H107897     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSPX5205M5-L-3-0/TR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hspx5205m5-l-3-0-tr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:21:25</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.2,VO/V:3,VI/V:18,IQ/mA:0.02,     (Ordering Information):  Product Code: H107852     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HMIC5205-3.0YM5(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hmic5205-3-0ym5-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:21:10</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.2,VO/V:3,VI/V:18,IQ/mA:0.02,     (Ordering Information):  Product Code: H107851     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HTLV70430DBVR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/htlv70430dbvr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:20:55</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.15,VO/V:3,VI/V:30,IQ/mA:0.0018,     (Ordering Information):  Product Code: H107850     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[TLV76050DBZR(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/tlv76050dbzr-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:20:41</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23      Parameter Introduction:IO/A:0.12,VO/V:5,VI/V:30,IQ/mA:0.005,     (Ordering Information):  Product Code: H107849     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[TLV76033DBZR(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/tlv76033dbzr-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:20:27</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23      Parameter Introduction:IO/A:0.12,VO/V:3.3,VI/V:30,IQ/mA:0.005,     (Ordering Information):  Product Code: H107848     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[NCP603SN360T1G(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ncp603sn360t1g-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:20:12</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:3.6,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107896     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[NCP603SN330T1G(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ncp603sn330t1g-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:19:58</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:3.3,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107847     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[NCP603SN300T1G(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ncp603sn300t1g-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:19:43</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:3,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107895     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[NCP603SN280T1G(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ncp603sn280t1g-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:19:29</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:2.8,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107894     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[NCP603SN250T1G(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ncp603sn250t1g-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:19:14</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:2.5,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107893     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[NCP603SN180T1G(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ncp603sn180t1g-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:19:00</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:1.8,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107892     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[NCP603SN120T1G(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ncp603sn120t1g-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:18:45</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:1.2,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107891     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MCP1801T-3002I/OT(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mcp1801t-3002i-ot-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:18:31</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.2,VO/V:3,VI/V:15,IQ/mA:0.003,     (Ordering Information):  Product Code: H107890     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MCP1801T-3302I/OT(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mcp1801t-3302i-ot-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:18:16</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.2,VO/V:3.3,VI/V:15,IQ/mA:0.003,     (Ordering Information):  Product Code: H107846     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MCP1801T-5002I/OT(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mcp1801t-5002i-ot-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:18:02</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.2,VO/V:5,VI/V:15,IQ/mA:0.003,     (Ordering Information):  Product Code: H107845     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MCP1802T-3002I/OT(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mcp1802t-3002i-ot-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:17:48</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:3,VI/V:15,IQ/mA:0.003,     (Ordering Information):  Product Code: H107889     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MCP1802T-3302I/OT(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mcp1802t-3302i-ot-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:17:33</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:3.3,VI/V:15,IQ/mA:0.003,     (Ordering Information):  Product Code: H107844     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MCP1802T-5002I/OT(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mcp1802t-5002i-ot-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:17:19</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:1.8,VI/V:15,IQ/mA:0.003,     (Ordering Information):  Product Code: H107843     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSPX3819M5-L-3-0/TR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hspx3819m5-l-3-0-tr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:17:04</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.4,VO/V:3,VI/V:20,IQ/mA:0.0018,     (Ordering Information):  Product Code: H107842     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[XC6201P502MR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/xc6201p502mr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:16:50</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:5,VI/V:12,IQ/mA:0.002,     (Ordering Information):  Product Code: H107841     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[XC6201P502PR(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/xc6201p502pr-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:16:36</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-89      Parameter Introduction:IO/A:0.3,VO/V:5,VI/V:12,IQ/mA:0.002,     (Ordering Information):  Product Code: H107839     Minimum packaging: 1000pcs      Gross weight/gram :0.15g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[XC6201P302PR(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/xc6201p302pr-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:16:21</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-89      Parameter Introduction:IO/A:0.3,VO/V:3,VI/V:12,IQ/mA:0.002,     (Ordering Information):  Product Code: H107840     Minimum packaging: 1000pcs      Gross weight/gram :0.15g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[XC6202P302MR(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/xc6202p302mr-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:16:07</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23      Parameter Introduction:IO/A:0.15,VO/V:3,VI/V:20,IQ/mA:0.002,     (Ordering Information):  Product Code: H107838     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[XC6202P332MR(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/xc6202p332mr-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:15:52</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23      Parameter Introduction:IO/A:0.15,VO/V:3.3,VI/V:20,IQ/mA:0.002,     (Ordering Information):  Product Code: H107837     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[XC6202P502MR(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/xc6202p502mr-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:15:38</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23      Parameter Introduction:IO/A:0.15,VO/V:5,VI/V:20,IQ/mA:0.002,     (Ordering Information):  Product Code: H107836     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[XC6202P502PR(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/xc6202p502pr-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:15:23</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-89      Parameter Introduction:IO/A:0.15,VO/V:5,VI/V:20,IQ/mA:0.002,     (Ordering Information):  Product Code: H107834     Minimum packaging: 1000pcs      Gross weight/gram :0.15g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[XC6202P332PR(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/xc6202p332pr-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:15:09</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-89      Parameter Introduction:IO/A:0.15,VO/V:3.3,VI/V:20,IQ/mA:0.002,     (Ordering Information):  Product Code: H107835     Minimum packaging: 1000pcs      Gross weight/gram :0.15g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[XC6202P302PR(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/xc6202p302pr-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:14:54</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-89      Parameter Introduction:IO/A:0.15,VO/V:3,VI/V:20,IQ/mA:0.002,     (Ordering Information):  Product Code: H107790     Minimum packaging: 1000pcs      Gross weight/gram :0.15g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXC6204B182MR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hxc6204b182mr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:14:40</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:1.8,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107833     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXC6204B252MR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hxc6204b252mr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:14:26</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:2.5,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107832     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXC6204B282MR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hxc6204b282mr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:14:11</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:2.8,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107831     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXC6204B302MR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hxc6204b302mr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:13:57</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:3,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107830     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXC6204B362MR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hxc6204b362mr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:13:42</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:3.6,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107829     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXC6204B502MR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hxc6204b502mr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:13:27</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:5,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107888     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXC6219B252MR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hxc6219b252mr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:13:13</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:2.5,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107827     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXC6219B282MR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hxc6219b282mr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:12:58</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:2.8,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107826     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXC6219B302MR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hxc6219b302mr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:12:44</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:3,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107825     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXC6219B362MR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hxc6219b362mr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:12:30</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:3.6,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107824     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXC6219B502MR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hxc6219b502mr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:12:15</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:5,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107887     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HL7808CV(TO-220S)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hl7808cv-to-220s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:12:01</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: TO-220S      Parameter Introduction:IO/A:8,VO/V:1.5,VI/V:35V,IQ/mA:4.3,     (Ordering Information):  Product Code: H105284     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HL7912CV(TO-220S)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hl7912cv-to-220s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:11:46</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: TO-220S      Parameter Introduction:IO/A:12,VO/V:1.5,VI/V:35V,IQ/mA:2,     (Ordering Information):  Product Code: H105282     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HL7905CV(TO-220S)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hl7905cv-to-220s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:11:32</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: TO-220S      Parameter Introduction:IO/A:5,VO/V:1.5,VI/V:35V,IQ/mA:1.5,     (Ordering Information):  Product Code: H105283     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HL7915CV(TO-220S)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hl7915cv-to-220s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:11:17</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: TO-220S      Parameter Introduction:IO/A:15,VO/V:1.5,VI/V:35V,IQ/mA:2,     (Ordering Information):  Product Code: H105281     Minimum packaging: 50pcs      Gross weight/gram :2.67g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HLM3480IM3X-5.0/NOPB(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hlm3480im3x-5-0-nopb-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:11:03</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23      Parameter Introduction:IO/A:0.12,VO/V:5,VI/V:30,IQ/mA:0.005,     (Ordering Information):  Product Code: H107805     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HMCP1703T-3302E/CB(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hmcp1703t-3302e-cb-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:10:49</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23      Parameter Introduction:IO/A:0.3,VO/V:3.3,VI/V:18,IQ/mA:0.0018,     (Ordering Information):  Product Code: H107801     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HMCP1703T-5002E/CB(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hmcp1703t-5002e-cb-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:10:34</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23      Parameter Introduction:IO/A:0.3,VO/V:5,VI/V:18,IQ/mA:0.0018,     (Ordering Information):  Product Code: H107800     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAP2204R-5.0TRG1(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hap2204r-5-0trg1-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:10:20</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-89      Parameter Introduction:IO/A:0.3,VO/V:5,VI/V:22,IQ/mA:0.0015,     (Ordering Information):  Product Code: H107802     Minimum packaging: 1000pcs      Gross weight/gram :0.15g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAP2204K-5.0TRG1(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hap2204k-5-0trg1-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:10:05</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:5,VI/V:22,IQ/mA:0.0015,     (Ordering Information):  Product Code: H107803     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSP6201EM5-L-3-3/TR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hsp6201em5-l-3-3-tr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:09:51</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:3.3,VI/V:12,IQ/mA:0.002,     (Ordering Information):  Product Code: H107797     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSPX3819M5-L-5-0/TR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hspx3819m5-l-5-0-tr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:09:36</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.4,VO/V:5,VI/V:20,IQ/mA:0.0018,     (Ordering Information):  Product Code: H107796     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSPX3819M5-L-3-3/TR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hspx3819m5-l-3-3-tr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:09:22</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.4,VO/V:3.3,VI/V:20,IQ/mA:0.0018,     (Ordering Information):  Product Code: H107794     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXC6219B182MR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hxc6219b182mr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:09:07</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:1.8,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107792     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXC6204B332MR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hxc6204b332mr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:08:53</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:3.3,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107791     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HTPS79333DBVR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/htps79333dbvr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:08:38</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.25,VO/V:3.3,VI/V:6,IQ/mA:0.075,     (Ordering Information):  Product Code: H107789     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HTLV70450DBVR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/htlv70450dbvr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:08:24</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.15,VO/V:5,VI/V:30,IQ/mA:0.0018,     (Ordering Information):  Product Code: H107788     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HTLV70433DBVR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/htlv70433dbvr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:08:10</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.15,VO/V:3.3,VI/V:30,IQ/mA:0.0018,     (Ordering Information):  Product Code: H107787     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[2019-3.3YN5G/TR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/2019-3-3yn5g-tr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:07:55</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:3.3,VI/V:7,IQ/mA:0.08,     (Ordering Information):  Product Code: H107786     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[H2019-1.8YN5G/TR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/h2019-1-8yn5g-tr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:07:41</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:1.8,VI/V:7,IQ/mA:0.08,     (Ordering Information):  Product Code: H107804     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HRT9013-33GB(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hrt9013-33gb-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:07:26</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.5,VO/V:3.3,VI/V:7,IQ/mA:0.075,     (Ordering Information):  Product Code: H107785     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HRT9013-28GB(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hrt9013-28gb-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:07:12</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.5,VO/V:2.8,VI/V:7,IQ/mA:0.075,     (Ordering Information):  Product Code: H107798     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HRT9013-18GB(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hrt9013-18gb-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:06:58</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.5,VO/V:1.8,VI/V:7,IQ/mA:0.075,     (Ordering Information):  Product Code: H107784     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HRT9013-12GB(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hrt9013-12gb-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:06:43</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.5,VO/V:1.2,VI/V:7,IQ/mA:0.075,     (Ordering Information):  Product Code: H107799     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HNCP114ASN330T1G(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hncp114asn330t1g-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:06:29</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.3,VO/V:3.3,VI/V:6,IQ/mA:0.07,     (Ordering Information):  Product Code: H107783     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HMIC5219-3.3YM5(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hmic5219-3-3ym5-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:06:15</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.45,VO/V:3.3,VI/V:15,IQ/mA:0.025,     (Ordering Information):  Product Code: H107782     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSPX5205M5-L-5-0(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hspx5205m5-l-5-0-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:06:00</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.2,VO/V:5,VI/V:18,IQ/mA:0.02,     (Ordering Information):  Product Code: H107781     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSPX5205M5-L-3-3/TR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hspx5205m5-l-3-3-tr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:05:46</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.2,VO/V:3.3,VI/V:18,IQ/mA:0.02,     (Ordering Information):  Product Code: H107780     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HMIC5205-3.3YM5(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hmic5205-3-3ym5-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:05:31</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23-5L      Parameter Introduction:IO/A:0.2,VO/V:3.3,VI/V:18,IQ/mA:0.02,     (Ordering Information):  Product Code: H107779     Minimum packaging: 3000pcs      Gross weight/gram :0.034g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HMCP1700T-3302E/TT(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hmcp1700t-3302e-tt-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 02:03:30</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-23      Parameter Introduction:IO/A:0.3,VO/V:3.3,VI/V:6,IQ/mA:0.0015,     (Ordering Information):  Product Code: H107778     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[PSUR1610DNV05(DFN1610-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/psur1610dnv05-dfn1610-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 01:50:47</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN1610-2L      Parameter Introduction:IPP/A:120,VRWM/V:5,CJ/pF:650,LINE:1,TYPE:Uni(Unidirectional),     (Ordering Information):  Product Code: H107776     Minimum packaging: 3000pcs      Gross weight/gram :0.028g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SM05(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/sm05-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 01:50:32</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:IPP/A:10,VRWM/V:5,CJ/pF:60,LINE:2,TYPE:Uni(Unidirectional),     (Ordering Information):  Product Code: H101221     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[ESD5Z5.0C_V2(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd5z5-0c_v2-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 01:50:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-523      Parameter Introduction:IPP/A:11,VRWM/V:5,CJ/pF:20,LINE:1,TYPE:Bi(Bidirectional）,     (Ordering Information):  Product Code: H101180     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[GBLC03C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/gblc03c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 01:50:02</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:IPP/A:20,VRWM/V:3.3,CJ/pF:1,LINE:1,TYPE:Bi(Bidirectional）,     (Ordering Information):  Product Code: H101142     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[ESD0502U(DFN1006-3L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd0502u-dfn1006-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 01:49:47</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN1006-3L      Parameter Introduction:IPP/A:3,VRWM/V:5,CJ/pF:0.35,LINE:2,TYPE:Uni(Unidirectional),     (Ordering Information):  Product Code: H101103     Minimum packaging: 10000pcs      Gross weight/gram :0.009g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[ESD8B12(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd8b12-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 01:49:32</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN1006-2L      Parameter Introduction:IPP/A:50,VRWM/V:12,CJ/pF:100,LINE:1,TYPE:Uni(Unidirectional),     (Ordering Information):  Product Code: H101085     Minimum packaging: 10000pcs      Gross weight/gram :0.008g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[ESD8D15C(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd8d15c-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 01:49:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN1006-2L      Parameter Introduction:IPP/A:6.5,VRWM/V:15,CJ/pF:20,LINE:1,TYPE:Bi(Bidirectional）,     (Ordering Information):  Product Code: H101091     Minimum packaging: 10000pcs      Gross weight/gram :0.008g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ3.3CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj3-3ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 01:49:02</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:IPP/A:82.2,VRWM/V:3.3,TYPE:Bi(Bidirectional）,     (Ordering Information):  Product Code: H105023     Minimum packaging: 3000pcs      Gross weight/gram :0.191g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BV03CW(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/bv03cw-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 01:48:47</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:IPP/A:15,VRWM/V:3,CJ/pF:1.2,LINE:1,TYPE:Bi(Bidirectional）,     (Ordering Information):  Product Code: H100193     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[PESD3V3L1BA,115(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/pesd3v3l1ba-115-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 01:48:32</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:IPP/A:16,VRWM/V:3.3,CJ/pF:100,LINE:1,TYPE:Bi(Bidirectional）,     (Ordering Information):  Product Code: H100188     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESD5471X(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5471x-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 01:48:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN1006-2L      Parameter Introduction:IPP/A:3,VRWM/V:5,CJ/pF:5.5,LINE:1,TYPE:Bi(Bidirectional）,     (Ordering Information):  Product Code: H100063     Minimum packaging: 10000pcs      Gross weight/gram :0.008g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HRSB27VTE-17(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrsb27vte-17-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 01:48:02</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:IPP/A:4,VRWM/V:24,CJ/pF:20,LINE:1,TYPE:Bi(Bidirectional）,     (Ordering Information):  Product Code: H100009     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPESD1CAN-UX(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd1can-ux-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-09-22 01:47:47</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-323      Parameter Introduction:IPP/A:4,VRWM/V:24,CJ/pF:10,LINE:2,TYPE:Bi(Bidirectional）,     (Ordering Information):  Product Code: H100001     Minimum packaging: 3000pcs      Gross weight/gram :0.027g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HBA892 E6327(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/rf-switch/">RF switch</category>
	<link><![CDATA[http://www.hxymos.com/en/rf-switch/hba892-e6327-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:22:15</pubDate>
	<description><![CDATA[Product Category: RF switch     Packing: SOD-523      Parameter Introduction:Diode configuration: independent, forward voltage drop (Vf)/V: 1 @ 100mA, DC reverse voltage withstand (Vr)/V: 30, leakage current/nA: 20     (Ordering Information):  Product Code: H102013     Minimum packaging: 3000pcs      Gross weight/gram :0.0068g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HBA592 E6327(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/rf-switch/">RF switch</category>
	<link><![CDATA[http://www.hxymos.com/en/rf-switch/hba592-e6327-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:22:05</pubDate>
	<description><![CDATA[Product Category: RF switch     Packing: SOD-323      Parameter Introduction:Diode configuration: independent, forward voltage drop (Vf)/V: 1 @ 20mA, DC reverse voltage withstand (Vr)/V: 30, leakage current/nA: 10     (Ordering Information):  Product Code: H102017     Minimum packaging: 3000pcs      Gross weight/gram :0.0155g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HUMH9NTN(SOT-363)]]></title>
	<category domain="http://www.hxymos.com/en/digital-transistor/">Digital transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/digital-transistor/humh9ntn-sot-363-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:21:56</pubDate>
	<description><![CDATA[Product Category: Digital transistor     Packing: SOT-363      Parameter Introduction:Transistor type: NPN+NPN, collector emitter breakdown voltage (Vceo)/V: 50, collector current (Ic)/A: 0.07, power (Pd)/W: 0.15     (Ordering Information):  Product Code: H102015     Minimum packaging: 3000pcs      Gross weight/gram :0.0182g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HDTC144EMT2L(SOT-723)]]></title>
	<category domain="http://www.hxymos.com/en/digital-transistor/">Digital transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/digital-transistor/hdtc144emt2l-sot-723-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:21:46</pubDate>
	<description><![CDATA[Product Category: Digital transistor     Packing: SOT-723      Parameter Introduction:Transistor type: NPN, collector emitter breakdown voltage (Vceo)/V: 50, collector current (Ic)/A: 0.03, power (Pd)/W: 0.1     (Ordering Information):  Product Code: H102012     Minimum packaging: 8000pcs      Gross weight/gram :0.0065g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HDTC144EKAT146(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/digital-transistor/">Digital transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/digital-transistor/hdtc144ekat146-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:21:36</pubDate>
	<description><![CDATA[Product Category: Digital transistor     Packing: SOT-23-3L      Parameter Introduction:Transistor type: NPN, collector emitter breakdown voltage (Vceo)/V: 50, collector current (Ic)/A: 0.03, power (Pd)/W: 0.2     (Ordering Information):  Product Code: H102014     Minimum packaging: 3000pcs      Gross weight/gram :0.037967g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[H2SC3357-RE(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/h2sc3357-re-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:21:26</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: SOT-89      Parameter Introduction:Current/A: 0.1, voltage/V: 12, amplification factor: 120-270, frequency/MHz: 6500, type: NPN,     (Ordering Information):  Product Code: H101898     Minimum packaging: 1000pcs      Gross weight/gram :0.1456g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HUMZ1NTR(SOT-363)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/humz1ntr-sot-363-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:21:17</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: SOT-363      Parameter Introduction:Current/A: 0.15, voltage/V: 50, amplification factor: 120-560, frequency/MHz: 180, type: NPN+PNP,     (Ordering Information):  Product Code: H101900     Minimum packaging: 3000pcs      Gross weight/gram :0.031567g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[H2SB1260T100R(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/h2sb1260t100r-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:21:07</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: SOT-89      Parameter Introduction:Current/A: 1, voltage/V: 80, amplification factor: 180-390, frequency/MHz: 100, type: PNP,     (Ordering Information):  Product Code: H101899     Minimum packaging: 1000pcs      Gross weight/gram :0.1645g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[H2SC2412KT146R(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/h2sc2412kt146r-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:20:57</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: SOT-23      Parameter Introduction:Current/A: 0.15, voltage/V: 50, amplification factor: 180-390, frequency/MHz: 180, type: NPN,     (Ordering Information):  Product Code: H101903     Minimum packaging: 3000pcs      Gross weight/gram :0.033967g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[H2SC5658T2LR(SOT-723)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/h2sc5658t2lr-sot-723-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:20:48</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: SOT-723      Parameter Introduction:Current/A: 0.15, voltage/V: 50, amplification factor: 180-390, frequency/MHz: 180, type: NPN,     (Ordering Information):  Product Code: H101901     Minimum packaging: 8000pcs      Gross weight/gram :0.0073g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[H2SA1037AKT146R(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/h2sa1037akt146r-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:20:38</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: SOT-23      Parameter Introduction:Current/A: 0.15, voltage/V: 50, amplification factor: 180-390, frequency/MHz: 60, type: PNP,     (Ordering Information):  Product Code: H101902     Minimum packaging: 3000pcs      Gross weight/gram :0.033667g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[H2SD1898T100R(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/h2sd1898t100r-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:20:28</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: SOT-89      Parameter Introduction:Current/A: 1, voltage/V: 80, amplification factor: 180-390, frequency/MHz: 100, type: NPN,     (Ordering Information):  Product Code: H101904     Minimum packaging: 1000pcs      Gross weight/gram :0.1624g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AMS1117-3.3(SOT-223)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ams1117-3-3-sot-223-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:20:18</pubDate>
	<description><![CDATA[Product Category: LDO     Packing: SOT-223      Parameter Introduction:Output current/A: 1, output voltage/V: 3.3, withstand voltage/V: 18, static current/mA: 12000,     (Ordering Information):  Product Code: H104711     Minimum packaging: 2500pcs      Gross weight/gram :0.1976686g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HLTH7R(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/battery-management/">Battery-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/battery-management/hlth7r-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:20:08</pubDate>
	<description><![CDATA[Product Category: Battery-IC     Packing: SOT-23-5L      Parameter Introduction:Power supply voltage: 4.5V~5.5V, maximum charging current: 600mA, battery type: lithium-ion, battery cell count: 1     (Ordering Information):  Product Code: H104987     Minimum packaging: 3000pcs      Gross weight/gram :0.039393g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HTP4056(ESOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/battery-management/">Battery-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/battery-management/htp4056-esop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:19:59</pubDate>
	<description><![CDATA[Product Category: Battery-IC     Packing: ESOP-8      Parameter Introduction:Chip type: Charging chip, maximum charging current: 1.2A, charging saturation voltage: 4.2V, power supply voltage: 4.5V-8V     (Ordering Information):  Product Code: H104986     Minimum packaging: 4000pcs      Gross weight/gram :0.157779g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BC847C(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bc847c-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:19:49</pubDate>
	<description><![CDATA[Product Category: Transistor     Packing: SOT-23      Parameter Introduction:Current/A: 0.1, voltage/V: 45, amplification factor: 420-800, frequency/MHz: 100, type: NPN,     (Ordering Information):  Product Code: H104980     Minimum packaging: 3000pcs      Gross weight/gram :0.036391g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HRB531SM-30T2R(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/hrb531sm-30t2r-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:09:21</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.35, voltage/V: 40, voltage drop/V: 0.6, reverse current/uA: 5, surge current/A: 2,     (Ordering Information):  Product Code: H102365     Minimum packaging: 3000pcs      Gross weight/gram :0.026667g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HRB161MM-20TR(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/hrb161mm-20tr-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:09:09</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SOD-123FL      Parameter Introduction:Current/A: 1, voltage/V: 20, voltage drop/V: 0.55, surge current/A: 30,     (Ordering Information):  Product Code: H102367     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HRB160MM-60TR(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/hrb160mm-60tr-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:08:57</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SOD-123FL      Parameter Introduction:Current/A: 1, voltage/V: 60, voltage drop/V: 0.7, reverse current/uA: 200, surge current/A: 30,     (Ordering Information):  Product Code: H102369     Minimum packaging: 3000pcs      Gross weight/gram :0.0365g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HRB521SM-30T2R(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/hrb521sm-30t2r-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:08:46</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.35, voltage/V: 40, voltage drop/V: 0.6, reverse current/uA: 5, surge current/A: 2,     (Ordering Information):  Product Code: H102374     Minimum packaging: 3000pcs      Gross weight/gram :0.0258g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HRB060MM-60TR(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/hrb060mm-60tr-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:08:34</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SOD-123FL      Parameter Introduction:Current/A: 2, voltage/V: 60, voltage drop/V: 0.7, reverse current/uA: 100, surge current/A: 50,     (Ordering Information):  Product Code: H102366     Minimum packaging: 3000pcs      Gross weight/gram :0.0249g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HDAN217T146(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/hdan217t146-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:08:22</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SOT-23      Parameter Introduction:Current/A: 0.1, voltage/V: 85, voltage drop/V: 1.2, reverse current/uA: 0.5, surge current/A: 2,     (Ordering Information):  Product Code: H102364     Minimum packaging: 3000pcs      Gross weight/gram :0.034333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HDAP202KT146(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/hdap202kt146-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:08:11</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SOT-23      Parameter Introduction:Current/A: 0.1, voltage/V: 85, voltage drop/V: 1.2, reverse current/uA: 0.5, surge current/A: 2,     (Ordering Information):  Product Code: H102372     Minimum packaging: 3000pcs      Gross weight/gram :0.035333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[H1SS355TE-17(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/h1ss355te-17-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:07:59</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SOD-323      Parameter Introduction:Current/A: 0.15, voltage/V: 100, voltage drop/V: 1.25, reverse current/uA: 1, surge current/A: 2,     (Ordering Information):  Product Code: H102373     Minimum packaging: 3000pcs      Gross weight/gram :0.030767g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[ES2JF(SMAF)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/es2jf-smaf-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:07:36</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SMAF      Parameter Introduction:Current/A: 2, voltage/V: 600, voltage drop/V: 1.7, reverse current/uA: 5, surge current/A: 50,     (Ordering Information):  Product Code: H104985     Minimum packaging: 3000pcs      Gross weight/gram :0.051g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[2CZ4007(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/2cz4007-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:07:25</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SOD-123FL      Parameter Introduction:Current/A: 1, voltage/V: 1000, voltage drop/V: 1.1, reverse current/uA: 5, surge current/A: 30,     (Ordering Information):  Product Code: H104984     Minimum packaging: 3000pcs      Gross weight/gram :0.037333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[1N4007W(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/1n4007w-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:07:13</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SOD-123FL      Parameter Introduction:Current/A: 1, voltage/V: 1000, voltage drop/V: 1.1, reverse current/uA: 5, surge current/A: 30,     (Ordering Information):  Product Code: H104983     Minimum packaging: 3000pcs      Gross weight/gram :0.037125g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[1N4004W(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/1n4004w-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:07:02</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SOD-123FL      Parameter Introduction:Current/A: 1, voltage/V: 400, voltage drop/V: 1.1, reverse current/uA: 5, surge current/A: 30,     (Ordering Information):  Product Code: H104982     Minimum packaging: 3000pcs      Gross weight/gram :0.040427g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BAT54WS(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bat54ws-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 03:06:50</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SOD-323      Parameter Introduction:Current/A: 0.2, voltage/V: 30, voltage drop/V: 0.8, reverse current/uA: 2, surge current/A: 0.6,     (Ordering Information):  Product Code: H104981     Minimum packaging: 3000pcs      Gross weight/gram :0.019715702970297g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[H1SS400SMT2R(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/h1ss400smt2r-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 02:59:48</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.15, voltage/V: 100, voltage drop/V: 1.25, reverse current/uA: 1, surge current/A: 2,     (Ordering Information):  Product Code: H102363     Minimum packaging: 3000pcs      Gross weight/gram :0.026733g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[H2SK3078A(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/h2sk3078a-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 02:15:26</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-89      Parameter Introduction:Type: N-channel, drain source voltage (Vdss)/V: 12, continuous drain current (Id)/A: 0.5, power (Pd)/W: 3     (Ordering Information):  Product Code: H102016     Minimum packaging: 1000pcs      Gross weight/gram :0.146g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[IRFR9024NTR(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr9024ntr-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 02:15:14</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 10, voltage/V: 60, internal resistance Typ/mR: 125, VGS: 20, type: P,     (Ordering Information):  Product Code: H104542     Minimum packaging: 2500pcs      Gross weight/gram :0.3830145g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[IRFR5305TRLPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr5305trlpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 02:15:02</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 30, voltage/V: 60, internal resistance Typ/mR: 48, VGS: 20, type: P,     (Ordering Information):  Product Code: H103752     Minimum packaging: 2500pcs      Gross weight/gram :0.3830145g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BSS84(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss84-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 02:14:50</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 0.1, Voltage/V: 50, Internal Resistance Typ/mR: 2000, VGS: 20, Type: P,     (Ordering Information):  Product Code: H104211     Minimum packaging: 3000pcs      Gross weight/gram :0.0306352734899329g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BSS123(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss123-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 02:14:38</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 0.2, Voltage/V: 100, Internal Resistance Typ/mR: 2800, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104072     Minimum packaging: 3000pcs      Gross weight/gram :0.0306352734899329g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HRUM002N02T2L(SOT-723)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hrum002n02t2l-sot-723-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 02:08:47</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-723      Parameter Introduction:Current/A: 1.2, Voltage/V: 20, Internal Resistance Typ/mR: 150, VGS: 12, Type: N,     (Ordering Information):  Product Code: H102604     Minimum packaging: 8000pcs      Gross weight/gram :0.0063g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF05CT1G(SOT-363)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf05ct1g-sot-363-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:42:56</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-363      Parameter Introduction:Current/A: 8, voltage/V: 5, junction capacitance Typ/pF: 80, number of channels: 5, type: Uni unidirectional,     (Ordering Information):  Product Code: H104979     Minimum packaging: 3000pcs      Gross weight/gram :0.032622g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCPDZC5V0SPC-HF(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcpdzc5v0spc-hf-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:42:44</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN0603-2L      Parameter Introduction:Current/A: 3, voltage/V: 5, junction capacitance Typ/pF: 0.25, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104978     Minimum packaging: 12000pcs      Gross weight/gram :0.00565g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPESDEC2XD5VBF(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdec2xd5vbf-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:42:32</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN0603-2L      Parameter Introduction:Current/A: 3, voltage/V: 5, junction capacitance Typ/pF: 0.25, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104977     Minimum packaging: 12000pcs      Gross weight/gram :0.0057g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSTN061050BL15(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hstn061050bl15-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:42:20</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN0603-2L      Parameter Introduction:Current/A: 3, voltage/V: 5, junction capacitance Typ/pF: 0.25, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104976     Minimum packaging: 12000pcs      Gross weight/gram :0.0057g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSP3208-01UTG(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsp3208-01utg-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:42:08</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN0603-2L      Parameter Introduction:Current/A: 3, voltage/V: 5, junction capacitance Typ/pF: 0.25, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104975     Minimum packaging: 12000pcs      Gross weight/gram :0.00575g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSP3213-01UTG(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsp3213-01utg-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:41:56</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN0603-2L      Parameter Introduction:Current/A: 3, voltage/V: 5, junction capacitance Typ/pF: 0.25, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104974     Minimum packaging: 12000pcs      Gross weight/gram :0.005664g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HASD08C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hasd08c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:41:44</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 15, voltage/V: 8, junction capacitance Typ/pF: 110, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104973     Minimum packaging: 3000pcs      Gross weight/gram :0.016167g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSYSD08C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsysd08c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:41:31</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 15, voltage/V: 8, junction capacitance Typ/pF: 110, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104972     Minimum packaging: 3000pcs      Gross weight/gram :0.016g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPSD08C-LF-T7(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpsd08c-lf-t7-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:41:19</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 15, voltage/V: 8, junction capacitance Typ/pF: 110, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104971     Minimum packaging: 3000pcs      Gross weight/gram :0.016167g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSELC08CI(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hselc08ci-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:41:07</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 15, voltage/V: 8, junction capacitance Typ/pF: 110, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104970     Minimum packaging: 3000pcs      Gross weight/gram :0.019715702970297g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCDSOD323-T08SC(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcdsod323-t08sc-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:40:55</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 15, voltage/V: 8, junction capacitance Typ/pF: 110, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104969     Minimum packaging: 3000pcs      Gross weight/gram :0.019715702970297g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HD24V0H1U2LP-7B(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hd24v0h1u2lp-7b-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:40:43</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN1006-2L      Parameter Introduction:Current/A: 4, voltage/V: 24, junction capacitance Typ/pF: 40, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104968     Minimum packaging: 10000pcs      Gross weight/gram :0.0058g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCESD1006NC24VU(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd1006nc24vu-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:40:31</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN1006-2L      Parameter Introduction:Current/A: 4, voltage/V: 24, junction capacitance Typ/pF: 40, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104967     Minimum packaging: 10000pcs      Gross weight/gram :0.0058g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAZ4024-01F(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz4024-01f-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:40:19</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN1006-2L      Parameter Introduction:Current/A: 4, voltage/V: 24, junction capacitance Typ/pF: 40, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104966     Minimum packaging: 10000pcs      Gross weight/gram :0.0058g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAZ9424-01F(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz9424-01f-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:40:07</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN1006-2L      Parameter Introduction:Current/A: 4, voltage/V: 24, junction capacitance Typ/pF: 40, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104965     Minimum packaging: 10000pcs      Gross weight/gram :0.0058g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HUCLAMP2401T.TCT(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/huclamp2401t-tct-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:39:55</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN1006-2L      Parameter Introduction:Current/A: 4, voltage/V: 24, junction capacitance Typ/pF: 40, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104964     Minimum packaging: 10000pcs      Gross weight/gram :0.00759324418604651g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSTN061050B300(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hstn061050b300-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:39:43</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN0603-2L      Parameter Introduction:Current/A: 2, voltage/V: 5, junction capacitance Typ/pF: 3, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104963     Minimum packaging: 10000pcs      Gross weight/gram :0.00515g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPESDWC2XD5VBL(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdwc2xd5vbl-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:39:31</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN0603-2L      Parameter Introduction:Current/A: 2, voltage/V: 5, junction capacitance Typ/pF: 3, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104962     Minimum packaging: 10000pcs      Gross weight/gram :0.00515g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCESD0603LC5VB-M(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd0603lc5vb-m-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:39:19</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN0603-2L      Parameter Introduction:Current/A: 2, voltage/V: 5, junction capacitance Typ/pF: 3, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104961     Minimum packaging: 10000pcs      Gross weight/gram :0.00515g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCTLTVS5V0B TR PBFREE(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hctltvs5v0b-tr-pbfree-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:39:07</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN0603-2L      Parameter Introduction:Current/A: 2, voltage/V: 5, junction capacitance Typ/pF: 3, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104960     Minimum packaging: 10000pcs      Gross weight/gram :0.00515g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCPDZ5V0C-HF(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcpdz5v0c-hf-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:38:54</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN0603-2L      Parameter Introduction:Current/A: 2, voltage/V: 5, junction capacitance Typ/pF: 3, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104959     Minimum packaging: 10000pcs      Gross weight/gram :0.005126g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSEN1511D3(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsen1511d3-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:38:42</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 9, voltage/V: 15, junction capacitance Typ/pF: 80, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104958     Minimum packaging: 3000pcs      Gross weight/gram :0.0174g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCDSOD323-T15S(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcdsod323-t15s-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:38:30</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 9, voltage/V: 15, junction capacitance Typ/pF: 80, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104957     Minimum packaging: 3000pcs      Gross weight/gram :0.0174g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPJSD15W_R1(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjsd15w_r1-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:38:18</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 9, voltage/V: 15, junction capacitance Typ/pF: 80, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104956     Minimum packaging: 3000pcs      Gross weight/gram :0.0172g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HRLSD32A151V(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrlsd32a151v-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:38:06</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 9, voltage/V: 15, junction capacitance Typ/pF: 80, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104955     Minimum packaging: 3000pcs      Gross weight/gram :0.0174g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPSD15-LF-T7(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpsd15-lf-t7-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:37:54</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 9, voltage/V: 15, junction capacitance Typ/pF: 80, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104954     Minimum packaging: 3000pcs      Gross weight/gram :0.0174g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSD32315(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsd32315-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:37:42</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 9, voltage/V: 15, junction capacitance Typ/pF: 80, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104953     Minimum packaging: 3000pcs      Gross weight/gram :0.01747g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPESDHC2FD5VUH(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdhc2fd5vuh-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:37:30</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN1006-2L      Parameter Introduction:Current/A: 15, voltage/V: 5, junction capacitance Typ/pF: 150, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104952     Minimum packaging: 10000pcs      Gross weight/gram :0.005867g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDHD05UFX(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdhd05ufx-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:37:18</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN1006-2L      Parameter Introduction:Current/A: 15, voltage/V: 5, junction capacitance Typ/pF: 150, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104951     Minimum packaging: 10000pcs      Gross weight/gram :0.005933g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCESD1006HC5VU(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd1006hc5vu-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:37:06</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN1006-2L      Parameter Introduction:Current/A: 15, voltage/V: 5, junction capacitance Typ/pF: 150, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104950     Minimum packaging: 10000pcs      Gross weight/gram :0.005867g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HVESD05A1A-HD1-GS08(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hvesd05a1a-hd1-gs08-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:36:54</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN1006-2L      Parameter Introduction:Current/A: 15, voltage/V: 5, junction capacitance Typ/pF: 150, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104949     Minimum packaging: 10000pcs      Gross weight/gram :0.005691g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HUCLAMP0501P.TCT(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/huclamp0501p-tct-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:36:42</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN1006-2L      Parameter Introduction:Current/A: 15, voltage/V: 5, junction capacitance Typ/pF: 150, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104948     Minimum packaging: 10000pcs      Gross weight/gram :0.005933g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAQ1250-01ETG(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haq1250-01etg-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:36:30</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN1006-2L      Parameter Introduction:Current/A: 15, voltage/V: 5, junction capacitance Typ/pF: 150, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104947     Minimum packaging: 10000pcs      Gross weight/gram :0.005933g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPSD05C-LF-T7(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpsd05c-lf-t7-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:36:18</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 20, voltage/V: 5, junction capacitance Typ/pF: 120, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104946     Minimum packaging: 3000pcs      Gross weight/gram :0.01925g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSYS01V05AMC(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsys01v05amc-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:36:06</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 20, voltage/V: 5, junction capacitance Typ/pF: 120, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104945     Minimum packaging: 3000pcs      Gross weight/gram :0.01925g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSD05C-01FTG(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsd05c-01ftg-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:35:54</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 20, voltage/V: 5, junction capacitance Typ/pF: 120, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104944     Minimum packaging: 3000pcs      Gross weight/gram :0.019g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HDSD05C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdsd05c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:35:42</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 20, voltage/V: 5, junction capacitance Typ/pF: 120, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104943     Minimum packaging: 3000pcs      Gross weight/gram :0.019g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCDSOD323-T05SC(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcdsod323-t05sc-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:35:30</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 20, voltage/V: 5, junction capacitance Typ/pF: 120, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104942     Minimum packaging: 3000pcs      Gross weight/gram :0.01925g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPJSD05CW_R1(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjsd05cw_r1-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:35:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 20, voltage/V: 5, junction capacitance Typ/pF: 120, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104941     Minimum packaging: 3000pcs      Gross weight/gram :0.017224g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAQ05C-01FTG(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haq05c-01ftg-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:35:05</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 20, voltage/V: 5, junction capacitance Typ/pF: 120, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104940     Minimum packaging: 3000pcs      Gross weight/gram :0.01925g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSDD32A36L01(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsdd32a36l01-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:34:53</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 4, voltage/V: 36, junction capacitance Typ/pF: 50, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104939     Minimum packaging: 3000pcs      Gross weight/gram :0.01825g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSEN3611D3(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsen3611d3-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:34:41</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 4, voltage/V: 36, junction capacitance Typ/pF: 50, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104938     Minimum packaging: 3000pcs      Gross weight/gram :0.018g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPSD36(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpsd36-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:34:29</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 4, voltage/V: 36, junction capacitance Typ/pF: 50, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104937     Minimum packaging: 3000pcs      Gross weight/gram :0.01825g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSD36-01FTG(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsd36-01ftg-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:34:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 4, voltage/V: 36, junction capacitance Typ/pF: 50, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104936     Minimum packaging: 3000pcs      Gross weight/gram :0.018g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCDSOD323-T36S(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcdsod323-t36s-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:34:05</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 4, voltage/V: 36, junction capacitance Typ/pF: 50, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104935     Minimum packaging: 3000pcs      Gross weight/gram :0.01825g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAQ36-01FTG(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haq36-01ftg-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:33:53</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 4, voltage/V: 36, junction capacitance Typ/pF: 50, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104934     Minimum packaging: 3000pcs      Gross weight/gram :0.016248g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPJE36HWS_R1(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpje36hws_r1-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:33:41</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 4, voltage/V: 36, junction capacitance Typ/pF: 50, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104933     Minimum packaging: 3000pcs      Gross weight/gram :0.01825g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSD12CT1G(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsd12ct1g-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:33:29</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 12, voltage/V: 12, junction capacitance Typ/pF: 50, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104932     Minimum packaging: 3000pcs      Gross weight/gram :0.019g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSESD12C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsesd12c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:33:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 12, voltage/V: 12, junction capacitance Typ/pF: 50, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104931     Minimum packaging: 3000pcs      Gross weight/gram :0.019g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSD12C-01FTG(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsd12c-01ftg-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:33:05</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 12, voltage/V: 12, junction capacitance Typ/pF: 50, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104930     Minimum packaging: 3000pcs      Gross weight/gram :0.019g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPJSD12CW_R1(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjsd12cw_r1-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:32:53</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 12, voltage/V: 12, junction capacitance Typ/pF: 50, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104929     Minimum packaging: 3000pcs      Gross weight/gram :0.01875g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXBP1012-G(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hxbp1012-g-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:32:41</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 12, voltage/V: 12, junction capacitance Typ/pF: 50, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104928     Minimum packaging: 3000pcs      Gross weight/gram :0.019g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESD3B12WS(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd3b12ws-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:32:29</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 12, voltage/V: 12, junction capacitance Typ/pF: 50, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104927     Minimum packaging: 3000pcs      Gross weight/gram :0.017391g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAQ12C-01FTG(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haq12c-01ftg-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:32:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 12, voltage/V: 12, junction capacitance Typ/pF: 50, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104926     Minimum packaging: 3000pcs      Gross weight/gram :0.019g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPESD24VL1BA,115(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd24vl1ba-115-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:32:05</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 9.5, voltage/V: 24, junction capacitance Typ/pF: 10, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104925     Minimum packaging: 3000pcs      Gross weight/gram :0.01825g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPESD1IVN24-AX(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd1ivn24-ax-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:31:53</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 9.5, voltage/V: 24, junction capacitance Typ/pF: 10, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104924     Minimum packaging: 3000pcs      Gross weight/gram :0.01825g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPESD24VL1BAZ(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd24vl1baz-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:31:41</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 9.5, voltage/V: 24, junction capacitance Typ/pF: 10, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104923     Minimum packaging: 3000pcs      Gross weight/gram :0.01825g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPESD24VV1BAX(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd24vv1bax-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:31:29</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 9.5, voltage/V: 24, junction capacitance Typ/pF: 10, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104922     Minimum packaging: 3000pcs      Gross weight/gram :0.01825g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPESDNC3D24VBL1(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdnc3d24vbl1-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:31:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 9.5, voltage/V: 24, junction capacitance Typ/pF: 10, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104921     Minimum packaging: 3000pcs      Gross weight/gram :0.018g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HDF2B29FU,H3XHF(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdf2b29fu-h3xhf-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:31:05</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 9.5, voltage/V: 24, junction capacitance Typ/pF: 10, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104920     Minimum packaging: 3000pcs      Gross weight/gram :0.016221g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HDESD24VL1BAQ-7(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdesd24vl1baq-7-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:30:53</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 9.5, voltage/V: 24, junction capacitance Typ/pF: 10, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104919     Minimum packaging: 3000pcs      Gross weight/gram :0.01825g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGL05T-HG3-18(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgl05t-hg3-18-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:30:41</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 15, voltage/V: 5, junction capacitance Typ/pF: 1.5, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104918     Minimum packaging: 3000pcs      Gross weight/gram :0.022333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGL05T-HG3-08(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgl05t-hg3-08-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:30:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 15, voltage/V: 5, junction capacitance Typ/pF: 1.5, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104917     Minimum packaging: 3000pcs      Gross weight/gram :0.022333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGL05T-HE3-18(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgl05t-he3-18-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:30:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 15, voltage/V: 5, junction capacitance Typ/pF: 1.5, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104916     Minimum packaging: 3000pcs      Gross weight/gram :0.022333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGL05T-E3-08(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgl05t-e3-08-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:30:05</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 15, voltage/V: 5, junction capacitance Typ/pF: 1.5, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104915     Minimum packaging: 3000pcs      Gross weight/gram :0.022333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGL05T-HE3-08(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgl05t-he3-08-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:29:53</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 15, voltage/V: 5, junction capacitance Typ/pF: 1.5, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104914     Minimum packaging: 3000pcs      Gross weight/gram :0.022667g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGL05T-G3-18(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgl05t-g3-18-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:29:41</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 15, voltage/V: 5, junction capacitance Typ/pF: 1.5, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104913     Minimum packaging: 3000pcs      Gross weight/gram :0.018597g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGL05T-G3-08(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgl05t-g3-08-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:29:29</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 15, voltage/V: 5, junction capacitance Typ/pF: 1.5, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104912     Minimum packaging: 3000pcs      Gross weight/gram :0.022333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGL05T-E3-18(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgl05t-e3-18-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:29:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 15, voltage/V: 5, junction capacitance Typ/pF: 1.5, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104911     Minimum packaging: 3000pcs      Gross weight/gram :0.022333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPSD15C-LF-T7(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpsd15c-lf-t7-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:29:05</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 8, voltage/V: 15, junction capacitance Typ/pF: 35, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104910     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCDSOD323-T15SC(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcdsod323-t15sc-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:28:53</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 8, voltage/V: 15, junction capacitance Typ/pF: 35, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104909     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSD15C-7(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsd15c-7-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:28:41</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 8, voltage/V: 15, junction capacitance Typ/pF: 35, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104908     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSD15C.TCT(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsd15c-tct-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:28:29</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 8, voltage/V: 15, junction capacitance Typ/pF: 35, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104907     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HRLSD32A151C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrlsd32a151c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:28:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 8, voltage/V: 15, junction capacitance Typ/pF: 35, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104906     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSD15C-01FTG(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsd15c-01ftg-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:28:05</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 8, voltage/V: 15, junction capacitance Typ/pF: 35, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104905     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSTS321150B351(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsts321150b351-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:27:53</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 8, voltage/V: 15, junction capacitance Typ/pF: 35, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104904     Minimum packaging: 3000pcs      Gross weight/gram :0.016147g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAQ15C-01FTG(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haq15c-01ftg-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:27:41</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 8, voltage/V: 15, junction capacitance Typ/pF: 35, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104903     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPSD36C-LF-T7(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpsd36c-lf-t7-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:27:29</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 4, voltage/V: 36, junction capacitance Typ/pF: 25, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104902     Minimum packaging: 3000pcs      Gross weight/gram :0.020333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESD3Z36C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd3z36c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:27:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 4, voltage/V: 36, junction capacitance Typ/pF: 25, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104901     Minimum packaging: 3000pcs      Gross weight/gram :0.020333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCDSOD323-T36SC(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcdsod323-t36sc-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:27:05</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 4, voltage/V: 36, junction capacitance Typ/pF: 25, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104900     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HASD36C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hasd36c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:26:53</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 4, voltage/V: 36, junction capacitance Typ/pF: 25, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104899     Minimum packaging: 3000pcs      Gross weight/gram :0.020333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESD36VD3B(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd36vd3b-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:26:41</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 4, voltage/V: 36, junction capacitance Typ/pF: 25, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104898     Minimum packaging: 3000pcs      Gross weight/gram :0.020333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPJSD36CW_R1(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjsd36cw_r1-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:26:29</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 4, voltage/V: 36, junction capacitance Typ/pF: 25, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104897     Minimum packaging: 3000pcs      Gross weight/gram :0.020333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HRSB36VTE-17(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrsb36vte-17-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:26:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 4, voltage/V: 36, junction capacitance Typ/pF: 25, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104896     Minimum packaging: 3000pcs      Gross weight/gram :0.016722g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPJSD36CW-AU(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjsd36cw-au-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:26:05</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 4, voltage/V: 36, junction capacitance Typ/pF: 25, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104895     Minimum packaging: 3000pcs      Gross weight/gram :0.020333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAQ36C-01FTG(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haq36c-01ftg-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:25:53</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 4, voltage/V: 36, junction capacitance Typ/pF: 25, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104894     Minimum packaging: 3000pcs      Gross weight/gram :0.020333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGSOT24C-E3-08(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot24c-e3-08-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:25:41</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 60, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H104893     Minimum packaging: 3000pcs      Gross weight/gram :0.022667g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPSOT24C-LF-T7(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpsot24c-lf-t7-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:25:29</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 60, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H104892     Minimum packaging: 3000pcs      Gross weight/gram :0.022667g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGSOT24C-HE3-08(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot24c-he3-08-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:25:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 60, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H104891     Minimum packaging: 3000pcs      Gross weight/gram :0.022667g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGSOT24C-G3-08(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot24c-g3-08-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:25:05</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 60, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H104890     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGSOT24C-HE3-18(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot24c-he3-18-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:24:53</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 60, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H104889     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGSOT24C-G3-18(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot24c-g3-18-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:24:41</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 60, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H104888     Minimum packaging: 3000pcs      Gross weight/gram :0.023333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGSOT24C-E3-18(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot24c-e3-18-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:24:29</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 60, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H104887     Minimum packaging: 3000pcs      Gross weight/gram :0.019398g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGSOT24C-HG3-18(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot24c-hg3-18-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:24:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 60, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H104886     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGSOT24C-HG3-08(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot24c-hg3-08-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:24:05</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 60, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H104885     Minimum packaging: 3000pcs      Gross weight/gram :0.022667g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPSD24C-LF-T7(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpsd24c-lf-t7-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:23:52</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 30, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104884     Minimum packaging: 3000pcs      Gross weight/gram :0.0208g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSD24C-01FTG(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsd24c-01ftg-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:23:40</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 30, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104883     Minimum packaging: 3000pcs      Gross weight/gram :0.0208g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCDSOD323-T24SC(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcdsod323-t24sc-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:23:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 30, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104882     Minimum packaging: 3000pcs      Gross weight/gram :0.0212g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSDD32C24L01-AT(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsdd32c24l01-at-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:23:16</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 30, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104881     Minimum packaging: 3000pcs      Gross weight/gram :0.0208g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HRLSD32A241C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrlsd32a241c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:23:04</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 30, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104880     Minimum packaging: 3000pcs      Gross weight/gram :0.0212g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESD3B24WS(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd3b24ws-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:22:52</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 30, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104879     Minimum packaging: 3000pcs      Gross weight/gram :0.0208g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSTS321240B301(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsts321240b301-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:22:40</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 30, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104878     Minimum packaging: 3000pcs      Gross weight/gram :0.0212g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSD24C-TP(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsd24c-tp-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:22:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 30, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104877     Minimum packaging: 3000pcs      Gross weight/gram :0.0208g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPJSD24CW_R1(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjsd24cw_r1-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:22:16</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 30, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104876     Minimum packaging: 3000pcs      Gross weight/gram :0.016867g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPJSD24CW-AU(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjsd24cw-au-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:22:03</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 30, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104875     Minimum packaging: 3000pcs      Gross weight/gram :0.0208g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSD24C.TCT(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsd24c-tct-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:21:51</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 30, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104874     Minimum packaging: 3000pcs      Gross weight/gram :0.0208g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGSOT36C-E3-08(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot36c-e3-08-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:21:39</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 3, voltage/V: 36, junction capacitance Typ/pF: 50, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H104873     Minimum packaging: 3000pcs      Gross weight/gram :0.0252g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSET23A36L02(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hset23a36l02-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:21:27</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 3, voltage/V: 36, junction capacitance Typ/pF: 50, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H104872     Minimum packaging: 3000pcs      Gross weight/gram :0.0252g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPSOT36C-LF-T7(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpsot36c-lf-t7-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:21:15</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 3, voltage/V: 36, junction capacitance Typ/pF: 50, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H104871     Minimum packaging: 3000pcs      Gross weight/gram :0.0252g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESD36CA(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd36ca-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:21:03</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 3, voltage/V: 36, junction capacitance Typ/pF: 50, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H104870     Minimum packaging: 3000pcs      Gross weight/gram :0.0252g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGSOT36C-HG3-18(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot36c-hg3-18-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:20:51</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 3, voltage/V: 36, junction capacitance Typ/pF: 50, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H104869     Minimum packaging: 3000pcs      Gross weight/gram :0.0252g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGSOT36C-G3-08(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot36c-g3-08-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:20:39</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 3, voltage/V: 36, junction capacitance Typ/pF: 50, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H104868     Minimum packaging: 3000pcs      Gross weight/gram :0.0252g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGSOT36C-E3-18(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot36c-e3-18-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:20:27</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 3, voltage/V: 36, junction capacitance Typ/pF: 50, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H104867     Minimum packaging: 3000pcs      Gross weight/gram :0.0252g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGSOT36C-HG3-08(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot36c-hg3-08-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:20:15</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 3, voltage/V: 36, junction capacitance Typ/pF: 50, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H104866     Minimum packaging: 3000pcs      Gross weight/gram :0.0252g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGSOT36C-HE3-18(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot36c-he3-18-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:20:03</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 3, voltage/V: 36, junction capacitance Typ/pF: 50, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H104865     Minimum packaging: 3000pcs      Gross weight/gram :0.0252g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGSOT36C-HE3-08(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot36c-he3-08-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:19:51</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 3, voltage/V: 36, junction capacitance Typ/pF: 50, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H104864     Minimum packaging: 3000pcs      Gross weight/gram :0.020683g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGSOT36C-G3-18(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot36c-g3-18-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:19:39</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 3, voltage/V: 36, junction capacitance Typ/pF: 50, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H104863     Minimum packaging: 3000pcs      Gross weight/gram :0.0252g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPSD05-LF-T7(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpsd05-lf-t7-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:19:27</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 20, voltage/V: 5, junction capacitance Typ/pF: 250, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104862     Minimum packaging: 3000pcs      Gross weight/gram :0.0235g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSD05.TCT(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsd05-tct-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:19:15</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 20, voltage/V: 5, junction capacitance Typ/pF: 250, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104861     Minimum packaging: 3000pcs      Gross weight/gram :0.024g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSDD32A05L01(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsdd32a05l01-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:19:03</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 20, voltage/V: 5, junction capacitance Typ/pF: 250, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104860     Minimum packaging: 3000pcs      Gross weight/gram :0.024g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSD05-7(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsd05-7-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:18:51</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 20, voltage/V: 5, junction capacitance Typ/pF: 250, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104859     Minimum packaging: 3000pcs      Gross weight/gram :0.024g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSESD05(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsesd05-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:18:39</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 20, voltage/V: 5, junction capacitance Typ/pF: 250, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104858     Minimum packaging: 3000pcs      Gross weight/gram :0.024g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HBV-D305ZB(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hbv-d305zb-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:18:27</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 20, voltage/V: 5, junction capacitance Typ/pF: 250, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104857     Minimum packaging: 3000pcs      Gross weight/gram :0.024g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESD5V0D3-TP(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5v0d3-tp-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:18:15</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 20, voltage/V: 5, junction capacitance Typ/pF: 250, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104856     Minimum packaging: 3000pcs      Gross weight/gram :0.024g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSZSD05T1G(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hszsd05t1g-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:18:03</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 20, voltage/V: 5, junction capacitance Typ/pF: 250, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104855     Minimum packaging: 3000pcs      Gross weight/gram :0.024g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESD5V0D3P11(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5v0d3p11-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:17:51</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 20, voltage/V: 5, junction capacitance Typ/pF: 250, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104854     Minimum packaging: 3000pcs      Gross weight/gram :0.024g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCDSOD323-T05S(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcdsod323-t05s-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:17:39</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 20, voltage/V: 5, junction capacitance Typ/pF: 250, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104853     Minimum packaging: 3000pcs      Gross weight/gram :0.024g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAQ05-01FTG(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haq05-01ftg-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:17:27</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 20, voltage/V: 5, junction capacitance Typ/pF: 250, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104852     Minimum packaging: 3000pcs      Gross weight/gram :0.024g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXBP1013-G(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hxbp1013-g-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:17:15</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 20, voltage/V: 5, junction capacitance Typ/pF: 250, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104851     Minimum packaging: 3000pcs      Gross weight/gram :0.01689g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCDSOD323-T05S-Q(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcdsod323-t05s-q-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:17:03</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 20, voltage/V: 5, junction capacitance Typ/pF: 250, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104850     Minimum packaging: 3000pcs      Gross weight/gram :0.024g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSEN2411D3(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsen2411d3-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:16:51</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 60, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104849     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPSD24(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpsd24-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:16:39</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 60, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104848     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCDSOD323-T24S(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcdsod323-t24s-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:16:27</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 60, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104847     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSD24-7(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsd24-7-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:16:15</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 60, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104846     Minimum packaging: 3000pcs      Gross weight/gram :0.0235g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HRLSD32A241V(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrlsd32a241v-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:16:02</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 60, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104845     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPE4224CS_R1(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpe4224cs_r1-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:15:50</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 60, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104844     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPESDNC3D24VU(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdnc3d24vu-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:15:38</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 60, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104843     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPJSD24W_R1(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjsd24w_r1-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:15:26</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 60, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104842     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSTS321240U401(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsts321240u401-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:15:14</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 60, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104841     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSD32324(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsd32324-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:15:02</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 60, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104840     Minimum packaging: 3000pcs      Gross weight/gram :0.019715702970297g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPJE24HWS_R1(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpje24hws_r1-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:14:50</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 60, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104839     Minimum packaging: 3000pcs      Gross weight/gram :0.019715702970297g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAQ24-01FTG(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haq24-01ftg-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:14:38</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 60, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104838     Minimum packaging: 3000pcs      Gross weight/gram :0.016054g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAZ4024-01L(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz4024-01l-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:14:26</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 60, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104837     Minimum packaging: 3000pcs      Gross weight/gram :0.0235g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSEN1211D3(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsen1211d3-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:14:14</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 12, voltage/V: 12, junction capacitance Typ/pF: 110, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104836     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSDD32A12L01(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsdd32a12l01-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:14:02</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 12, voltage/V: 12, junction capacitance Typ/pF: 110, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104835     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPESDHC3D12VU(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdhc3d12vu-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:13:50</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 12, voltage/V: 12, junction capacitance Typ/pF: 110, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104834     Minimum packaging: 3000pcs      Gross weight/gram :0.0235g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPESD12VS1UA,115(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd12vs1ua-115-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:13:38</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 12, voltage/V: 12, junction capacitance Typ/pF: 110, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104833     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSD12T1G(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsd12t1g-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:13:26</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 12, voltage/V: 12, junction capacitance Typ/pF: 110, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104832     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HRLSD32A121V(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrlsd32a121v-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:13:14</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 12, voltage/V: 12, junction capacitance Typ/pF: 110, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104831     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSD12-7(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsd12-7-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:13:02</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 12, voltage/V: 12, junction capacitance Typ/pF: 110, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104830     Minimum packaging: 3000pcs      Gross weight/gram :0.024g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESD3Z12V0(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd3z12v0-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:12:50</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 12, voltage/V: 12, junction capacitance Typ/pF: 110, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104829     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPSD12-LF-T7(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpsd12-lf-t7-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:12:38</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 12, voltage/V: 12, junction capacitance Typ/pF: 110, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104828     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPJSD12W_R1(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjsd12w_r1-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:12:26</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 12, voltage/V: 12, junction capacitance Typ/pF: 110, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104827     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPESD12VS1UJ,115(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd12vs1uj-115-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:12:14</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 12, voltage/V: 12, junction capacitance Typ/pF: 110, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104826     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPESD12VS1UAF(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd12vs1uaf-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:12:02</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 12, voltage/V: 12, junction capacitance Typ/pF: 110, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104825     Minimum packaging: 3000pcs      Gross weight/gram :0.016054g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSD12-01FTG(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsd12-01ftg-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:11:50</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 12, voltage/V: 12, junction capacitance Typ/pF: 110, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H104824     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HL25L5V0CB2(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hl25l5v0cb2-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:11:38</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 2.5, voltage/V: 5, junction capacitance Typ/pF: 2.5, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104823     Minimum packaging: 3000pcs      Gross weight/gram :0.0235g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCDSOD323-T05C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcdsod323-t05c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:11:26</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 2.5, voltage/V: 5, junction capacitance Typ/pF: 2.5, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104822     Minimum packaging: 3000pcs      Gross weight/gram :0.0235g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HDESD5V0U1BA-7(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdesd5v0u1ba-7-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:11:13</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 2.5, voltage/V: 5, junction capacitance Typ/pF: 2.5, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104821     Minimum packaging: 3000pcs      Gross weight/gram :0.0235g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPESD5V0U1BA-Q(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd5v0u1ba-q-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:11:01</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 2.5, voltage/V: 5, junction capacitance Typ/pF: 2.5, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104820     Minimum packaging: 3000pcs      Gross weight/gram :0.0235g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPJGBLC05C_R1(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjgblc05c_r1-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:10:49</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 2.5, voltage/V: 5, junction capacitance Typ/pF: 2.5, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104819     Minimum packaging: 3000pcs      Gross weight/gram :0.0235g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPESD5V0U1BA,115(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd5v0u1ba-115-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:10:37</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 2.5, voltage/V: 5, junction capacitance Typ/pF: 2.5, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104818     Minimum packaging: 3000pcs      Gross weight/gram :0.0235g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSP4021-01FTG-C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsp4021-01ftg-c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:10:25</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 2.5, voltage/V: 5, junction capacitance Typ/pF: 2.5, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104817     Minimum packaging: 3000pcs      Gross weight/gram :0.019715702970297g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAZ1615-01L(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz1615-01l-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:10:13</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 2.5, voltage/V: 5, junction capacitance Typ/pF: 2.5, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104816     Minimum packaging: 3000pcs      Gross weight/gram :0.0235g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGBLC05C-LF-T7(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgblc05c-lf-t7-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:10:01</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 2.5, voltage/V: 5, junction capacitance Typ/pF: 2.5, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104815     Minimum packaging: 3000pcs      Gross weight/gram :0.0235g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPJGBLC05C-AU(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjgblc05c-au-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:09:49</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 2.5, voltage/V: 5, junction capacitance Typ/pF: 2.5, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104814     Minimum packaging: 3000pcs      Gross weight/gram :0.0235g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSD05LCC(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsd05lcc-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:09:37</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 2.5, voltage/V: 5, junction capacitance Typ/pF: 2.5, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104813     Minimum packaging: 3000pcs      Gross weight/gram :0.0235g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAQ4021-01FTG-C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haq4021-01ftg-c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:09:25</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 2.5, voltage/V: 5, junction capacitance Typ/pF: 2.5, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104812     Minimum packaging: 3000pcs      Gross weight/gram :0.016555g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HGBLC05CHP(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgblc05chp-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:09:13</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 2.5, voltage/V: 5, junction capacitance Typ/pF: 2.5, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H104811     Minimum packaging: 3000pcs      Gross weight/gram :0.0235g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAZ1045-04F(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz1045-04f-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:09:01</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4.5, voltage/V: 5, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104810     Minimum packaging: 3000pcs      Gross weight/gram :0.0235g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESD7004MUTAG(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd7004mutag-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:08:49</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4.5, voltage/V: 5, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104809     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSP3012-04UTG(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsp3012-04utg-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:08:37</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4.5, voltage/V: 5, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104808     Minimum packaging: 3000pcs      Gross weight/gram :0.024g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAOZ8829DI-05(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haoz8829di-05-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:08:25</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4.5, voltage/V: 5, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104807     Minimum packaging: 3000pcs      Gross weight/gram :0.0235g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSP0524PUTG(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsp0524putg-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:08:13</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4.5, voltage/V: 5, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104806     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPLR0524P-LF-T7(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hplr0524p-lf-t7-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:08:01</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4.5, voltage/V: 5, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104805     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCDDFN10-0524P(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcddfn10-0524p-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:07:49</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4.5, voltage/V: 5, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104804     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPESDARC10N5VU(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdarc10n5vu-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:07:37</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4.5, voltage/V: 5, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104803     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAOZ8808DI-05(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haoz8808di-05-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:07:25</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4.5, voltage/V: 5, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104802     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSTN254050UL50H(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hstn254050ul50h-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:07:13</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4.5, voltage/V: 5, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104801     Minimum packaging: 3000pcs      Gross weight/gram :0.0235g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAOZ8829ADI-05(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haoz8829adi-05-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:07:01</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4.5, voltage/V: 5, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104800     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDLC5V0DFN10(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdlc5v0dfn10-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:06:49</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4.5, voltage/V: 5, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104799     Minimum packaging: 3000pcs      Gross weight/gram :0.01809g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXBP14E5UFN-G(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hxbp14e5ufn-g-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:06:36</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4.5, voltage/V: 5, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104798     Minimum packaging: 3000pcs      Gross weight/gram :0.0235g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDSLC0534DFN10(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdslc0534dfn10-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:06:24</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4.5, voltage/V: 5, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104797     Minimum packaging: 3000pcs      Gross weight/gram :0.0235g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HRCLAMP0524PATCT(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrclamp0524patct-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:06:12</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 3, voltage/V: 5, junction capacitance Typ/pF: 0.4, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104796     Minimum packaging: 3000pcs      Gross weight/gram :0.025333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAOZ8S321UD4-05(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haoz8s321ud4-05-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:06:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 3, voltage/V: 5, junction capacitance Typ/pF: 0.4, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104795     Minimum packaging: 3000pcs      Gross weight/gram :0.025333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAOZ8804ADI(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haoz8804adi-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:05:48</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 3, voltage/V: 5, junction capacitance Typ/pF: 0.4, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104794     Minimum packaging: 3000pcs      Gross weight/gram :0.025333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDR0524PMUTAG(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdr0524pmutag-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:05:36</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 3, voltage/V: 5, junction capacitance Typ/pF: 0.4, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104793     Minimum packaging: 3000pcs      Gross weight/gram :0.025333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAZ5425-04F(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz5425-04f-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:05:24</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 3, voltage/V: 5, junction capacitance Typ/pF: 0.4, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104792     Minimum packaging: 3000pcs      Gross weight/gram :0.025333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HMDFN10A054U(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hmdfn10a054u-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:05:12</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 3, voltage/V: 5, junction capacitance Typ/pF: 0.4, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104791     Minimum packaging: 3000pcs      Gross weight/gram :0.025333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDALD05UG4X(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdald05ug4x-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:05:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 3, voltage/V: 5, junction capacitance Typ/pF: 0.4, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104790     Minimum packaging: 3000pcs      Gross weight/gram :0.025333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAOZ8809DI-05(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haoz8809di-05-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:04:48</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 3, voltage/V: 5, junction capacitance Typ/pF: 0.4, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104789     Minimum packaging: 3000pcs      Gross weight/gram :0.025333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAOZ8809ADI-05(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haoz8809adi-05-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:04:36</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 3, voltage/V: 5, junction capacitance Typ/pF: 0.4, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104788     Minimum packaging: 3000pcs      Gross weight/gram :0.025333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HD5V0FS4U10LP-7(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hd5v0fs4u10lp-7-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:04:24</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 3, voltage/V: 5, junction capacitance Typ/pF: 0.4, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104787     Minimum packaging: 3000pcs      Gross weight/gram :0.025333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCESD2510UC5VU-M(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd2510uc5vu-m-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:04:12</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 3, voltage/V: 5, junction capacitance Typ/pF: 0.4, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104786     Minimum packaging: 3000pcs      Gross weight/gram :0.025333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCESD2510LC5VU-M(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd2510lc5vu-m-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:04:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 3, voltage/V: 5, junction capacitance Typ/pF: 0.4, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104785     Minimum packaging: 3000pcs      Gross weight/gram :0.026667g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCESD2510LC5VU-S(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd2510lc5vu-s-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:03:48</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 3, voltage/V: 5, junction capacitance Typ/pF: 0.4, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104784     Minimum packaging: 3000pcs      Gross weight/gram :0.025333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPJE5UFN10A-AU(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpje5ufn10a-au-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:03:36</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 3, voltage/V: 5, junction capacitance Typ/pF: 0.4, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104783     Minimum packaging: 3000pcs      Gross weight/gram :0.025333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPESDALC10N5VUL(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdalc10n5vul-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:03:23</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 3, voltage/V: 5, junction capacitance Typ/pF: 0.4, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104782     Minimum packaging: 3000pcs      Gross weight/gram :0.025333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDR0524SMUTAG(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdr0524smutag-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:03:11</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 3, voltage/V: 5, junction capacitance Typ/pF: 0.4, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104781     Minimum packaging: 3000pcs      Gross weight/gram :0.025333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPESD4USB5B-TTS(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd4usb5b-tts-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:03:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 3, voltage/V: 5, junction capacitance Typ/pF: 0.4, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104780     Minimum packaging: 3000pcs      Gross weight/gram :0.0231055135135135g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPESD4USB5B-TBS(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd4usb5b-tbs-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:02:47</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 3, voltage/V: 5, junction capacitance Typ/pF: 0.4, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104779     Minimum packaging: 3000pcs      Gross weight/gram :0.025333g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAZ1143-04F(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz1143-04f-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:02:35</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104778     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAZ1043-04F(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz1043-04f-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:02:23</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104777     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPUSB3FR4(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpusb3fr4-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:02:11</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104776     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAZ9143-04F(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz9143-04f-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:01:59</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104775     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HRCLAMP3324P.TCT(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrclamp3324p-tct-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:01:47</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104774     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HD3V3X4U10LP-7(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hd3v3x4u10lp-7-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:01:35</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104773     Minimum packaging: 3000pcs      Gross weight/gram :0.024g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAZ1123-04F(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz1123-04f-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:01:23</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104772     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESD7504MUTAG(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd7504mutag-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:01:11</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104771     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HDT1240E-04LP-7(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdt1240e-04lp-7-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:00:59</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104770     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSP3420-04UTG(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsp3420-04utg-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:00:47</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104769     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCPDVR103V3UA-HF(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcpdvr103v3ua-hf-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:00:35</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104768     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPESDALC10N3V3U(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdalc10n3v3u-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:00:23</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104767     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESD8704MUTAG(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd8704mutag-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 01:00:11</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104766     Minimum packaging: 3000pcs      Gross weight/gram :0.024g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HDT1240A-04LP-7(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdt1240a-04lp-7-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 12:59:58</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104765     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HD3V3F4U10LPQ-7(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hd3v3f4u10lpq-7-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 12:59:46</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104764     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPESD4USB3U-TBS(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd4usb3u-tbs-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 12:59:34</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104763     Minimum packaging: 3000pcs      Gross weight/gram :0.022g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HDT1240A-04LPQ-7(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdt1240a-04lpq-7-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 12:59:23</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104762     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCESD2510UC3V3US(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd2510uc3v3us-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 12:59:11</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104761     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAZ1243-04F(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz1243-04f-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 12:58:59</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104760     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPESD4USB3U-TTS(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd4usb3u-tts-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 12:58:46</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104759     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAOZ8S301UD4-03(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haoz8s301ud4-03-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 12:58:35</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104758     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESD8104MUTAG(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd8104mutag-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 12:58:23</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104757     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HPESD4USB3B-TT(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd4usb3b-tt-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 12:58:10</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104756     Minimum packaging: 3000pcs      Gross weight/gram :0.024g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDLC3304P5-TP(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdlc3304p5-tp-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 12:57:58</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104755     Minimum packaging: 3000pcs      Gross weight/gram :0.022g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESD8004MUTAG(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd8004mutag-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 12:57:46</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104754     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HD3V3X4U10LPQ-7(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hd3v3x4u10lpq-7-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 12:57:35</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104753     Minimum packaging: 3000pcs      Gross weight/gram :0.023g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCDDFN10-3324P(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcddfn10-3324p-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 12:57:22</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104752     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAOZ8S321UD4-03(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haoz8s321ud4-03-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 12:57:10</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104751     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAOZ8809ADI-03(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haoz8809adi-03-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 12:56:58</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104750     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSTN254033UL50(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hstn254033ul50-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 12:56:46</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104749     Minimum packaging: 3000pcs      Gross weight/gram :0.024g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAOZ8829DI-03(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haoz8829di-03-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 12:56:34</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104748     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSZESD8704MTWTAG(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hszesd8704mtwtag-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 12:56:22</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104747     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAOZ8809DI-03(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haoz8809di-03-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 12:56:10</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104746     Minimum packaging: 3000pcs      Gross weight/gram :0.024g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HDT1240V3-04LP-7(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdt1240v3-04lp-7-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 12:55:58</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104745     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HAOZ8808DI-03(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haoz8808di-03-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 12:55:46</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104744     Minimum packaging: 3000pcs      Gross weight/gram :0.0231055135135135g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSTN254033UL33(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hstn254033ul33-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 12:55:34</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104743     Minimum packaging: 3000pcs      Gross weight/gram :0.0231055135135135g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HRCLAMP3324PQ(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrclamp3324pq-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-17 12:32:57</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN2510-10L      Parameter Introduction:Current/A: 4, voltage/V: 3.3, junction capacitance Typ/pF: 0.6, number of channels: 4, type: Uni unidirectional,     (Ordering Information):  Product Code: H104742     Minimum packaging: 3000pcs      Gross weight/gram :0.0225g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HSTS232150B251(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsts232150b251-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:19:55</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode adopts a dual channel design and is suitable for working voltage environments of ± 15V. It can effectively absorb transient currents of 10A in both forward and reverse directions, providing excellent electrostatic protection for electronic systems. Its low capacitance design of 30pF ensures that high-speed signal transmission is not affected, making it an ideal solution to protect high-performance electronic devices and data lines from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HSM15B(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsm15b-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:19:43</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode features a dual channel design to ensure all-round protection, withstand voltage of 15V, and can withstand instantaneous current shocks of positive and negative 10A, providing a stable and reliable electrostatic protection cover for valuable components on the circuit board. In addition, the low capacitance characteristic of 30pF minimizes signal interference, making it an ideal choice for ensuring high-speed data transmission and the safety of precision electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[HDESD15VL2BTQ-7(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdesd15vl2btq-7-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:19:32</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode adopts a dual channel design and can operate stably within the voltage range of ± 15V, effectively absorbing transient currents of 10A in both positive and negative directions, providing comprehensive electrostatic protection for the circuit. Its capacitance value as low as 30pF ensures that signal transmission is almost unaffected, making it very suitable for high-frequency signal lines and electronic devices that require strict signal integrity, providing protection for sensitive circuits.]]></description>
</item>
<item>
	<title><![CDATA[HPESDNC23T1235(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdnc23t1235-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:19:20</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode has a dual channel design and is suitable for 12V voltage environments. It can effectively withstand 5A instantaneous electrostatic shocks and provide balanced protection for the circuit. Its capacitance value, as low as 12 picoseconds, ensures fast signal transmission and no attenuation, making it the heart guard for protecting high sensitivity circuits and ensuring data integrity, safeguarding the stable operation of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HSTS232120B301(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsts232120b301-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:19:08</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode adopts a dual channel design and is suitable for 12V working voltage environments. It can withstand transient current surges of 11A and provide comprehensive electrostatic protection for circuits. Its compact 35 picosecond capacitance ensures complete and non-destructive high-speed transmission of signals, making it an ideal guardian of modern high-frequency circuits and sensitive electronic devices, effectively improving system stability and data security.]]></description>
</item>
<item>
	<title><![CDATA[HCEST23NC5VB(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcest23nc5vb-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:18:56</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode has a dual channel design that is suitable for multiple protection scenarios. The 5V working voltage is stable and reliable, and the 8A peak current processing ability effectively blocks the threat of static electricity. 90pF low capacitance value ensures signal integrity and high speed, making it the preferred solution for electrostatic protection in precision electronic equipment, ensuring circuit safety.]]></description>
</item>
<item>
	<title><![CDATA[HPESDNC23T5VB(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdnc23t5vb-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:18:44</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode features a dual channel design, suitable for multi-directional electrostatic protection needs. Stable operation at a working voltage of 5V, capable of withstanding 8A peak pulse current, providing balanced protection for the circuit. Its low capacitance value of 90 picoseconds ensures high-speed and clear signal transmission, making it an ideal component for protecting high-performance electronic devices from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HSTS232050B751(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsts232050b751-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:18:33</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed with dual channels and can withstand 3.3V voltage. Each channel can withstand 34A instantaneous current, providing a comprehensive electrostatic protection solution. The low capacitance characteristic of 60 picosecond ensures the non-destructive passage of high-speed signals, making it the preferred choice for protecting USB, HDMI and other interfaces as well as portable electronic devices. It effectively blocks electrostatic interference, improves system stability and data transmission reliability.]]></description>
</item>
<item>
	<title><![CDATA[HDESD3V3L2BTQ-7(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdesd3v3l2btq-7-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:18:21</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for dual channel circuits, with a withstand voltage of 3.3V per channel and a peak current processing capacity of up to 34A, providing comprehensive electrostatic protection for low voltage applications. The capacitance value of 60 picoseconds ensures the integrity of high-speed signal transmission, making it an ideal companion for anti-static sensitive technologies such as mobile communication, USB interfaces, and wireless devices, ensuring efficient protection and signal quality in compact spaces.]]></description>
</item>
<item>
	<title><![CDATA[HCEST23NC3V3U(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcest23nc3v3u-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:18:09</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed for dual channel applications, with a withstand voltage of 3.3V per channel and the ability to withstand peak current surges of 20A, providing efficient protection for low-voltage circuits. The capacitance value of 120 picoseconds ensures strong electrostatic protection while having little impact on signal transmission. It is an ideal choice for mobile devices, Internet of Things (IoT) modules, and other low-power electronic products, effectively enhancing the system‘s anti-static ability and ensuring the continuity and reliability of data transmission.]]></description>
</item>
<item>
	<title><![CDATA[HAZ9424-01H(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz9424-01h-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:17:57</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is designed specifically for single line protection, with a withstand voltage of 24V and can withstand 8A transient high current shocks, providing reliable electrostatic protection for sensitive electronic circuits. The capacitance value of 45 picoseconds ensures almost no interference in signal transmission, making it an ideal component for preventing electrostatic damage in precision instruments, communication equipment, and high-end consumer electronics, ensuring both signal quality and system stability.]]></description>
</item>
<item>
	<title><![CDATA[HD24V0S1U2TQ-7(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hd24v0s1u2tq-7-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:17:45</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode focuses on precise protection of a single channel, with a rated voltage of 24V and the ability to withstand 8A instantaneous current shocks, building a stable electrostatic protection wall for electronic devices. The low capacitance value of 45 picoseconds ensures signal integrity and is particularly suitable for high-precision circuits sensitive to static electricity, such as mobile communication, data transmission, and other application fields, providing stable operation and data security protection for equipment.]]></description>
</item>
<item>
	<title><![CDATA[HAQHV24-01LTG(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haqhv24-01ltg-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:17:34</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is optimized for single signal protection, with a withstand voltage of 24V and the ability to withstand 8A peak current shocks, providing strong electrostatic protection for sensitive components on circuit boards. The low capacitance design of 45 picosecond ensures the non-destructive passage of high-speed signals, making it an ideal choice for electrostatic protection in precision electronics, communication systems, and consumer electronic devices, effectively improving the overall stability and reliability of the system.]]></description>
</item>
<item>
	<title><![CDATA[HCESD523NC24VU(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd523nc24vu-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:17:22</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is designed specifically for a single signal path, with a withstand voltage of 24V and the ability to withstand 8A transient current shocks, providing solid protection for the circuit. The precise balance between protection efficiency and signal integrity is achieved by the 45 picosecond capacitance value, which is particularly suitable for consumer electronics, communication equipment, and other applications that are sensitive to static electricity and need to maintain high-frequency signal clarity, ensuring stable operation in complex electromagnetic environments and effectively blocking static electricity threats.]]></description>
</item>
<item>
	<title><![CDATA[HPESD24VS1UB(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd24vs1ub-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:17:10</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed specifically for single line applications in 24V voltage systems and has an 8A peak current processing capability, effectively blocking electrostatic discharge impacts. The low capacitance characteristic of 45 picosecond ensures almost no interference in signal transmission, making it very suitable for protecting various electrostatic sensitive electronic devices, such as mobile devices, network interfaces, etc., providing stable and efficient electrostatic protection solutions for your precision circuits.]]></description>
</item>
<item>
	<title><![CDATA[HCESD523NC18VU(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd523nc18vu-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:16:58</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is designed specifically for single channel circuits, with a withstand voltage of 18V and the ability to withstand 10A instantaneous current shocks, providing solid electrostatic protection for precision electronic devices. The 60 picosecond capacitance value ensures efficient protection while having minimal impact on most signal transmission, making it an ideal choice for applications such as mobile communication and computer interfaces, ensuring signal purity and equipment safety.]]></description>
</item>
<item>
	<title><![CDATA[HESD56181W12-2/TR(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd56181w12-2-tr-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:16:46</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode focuses on precise protection of a single channel. It can withstand 55A instantaneous current shocks at a working voltage of 12V, establishing a stable electrostatic protection line for valuable components on the circuit board. The capacitance design of 350pF ensures efficient electrostatic protection while minimizing the impact on signal transmission, making it an ideal guardian for highly sensitive electronic devices and data transmission systems.]]></description>
</item>
<item>
	<title><![CDATA[HPTVSHC3D12VUH(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hptvshc3d12vuh-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:16:34</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is specially designed for single signal lines, with a withstand voltage of 12V and a peak pulse current of up to 55A, providing strong electrostatic protection for the circuit. The 350pF capacitance value ensures that signal transmission is almost unaffected, making it an ideal companion for electronic devices that pursue both efficient protection and signal quality, especially in situations sensitive to static electricity and requiring complete data transmission.]]></description>
</item>
<item>
	<title><![CDATA[HPESDU1271D3(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdu1271d3-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:16:22</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is specially designed for single channel circuits, with a maximum operating voltage of 12V and a peak pulse current processing capacity of 55A, building an electrostatic protection wall for electronic components. The 350pF capacitance design ensures signal transmission without significant delay while providing protection, making it an ideal choice for high-performance and delicate protection needs, allowing your electronic devices to operate more confidently in complex environments.]]></description>
</item>
<item>
	<title><![CDATA[HAZ4512-01L(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz4512-01l-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:16:11</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is designed specifically for a single channel, with a withstand voltage of 12V and a high pulse current processing capacity of 55A, providing strong electrostatic impact protection for electronic devices. The capacitance value of 350pF ensures effective protection while also taking into account the quality of signal transmission, making it particularly suitable for application scenarios that require a balance between protection effectiveness and signal integrity. It is the preferred solution to enhance the level of electrostatic protection in the system.]]></description>
</item>
<item>
	<title><![CDATA[HAZ9712-01F(DFN1610-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz9712-01f-dfn1610-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:15:59</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is specially designed for a single signal path, with a withstand voltage of 12V and excellent 65A peak pulse current absorption ability, providing a solid electrostatic protection barrier for circuits. Designed with a capacitance value of 500pF, it is suitable for applications that are less sensitive to signal delay but emphasize strong protection, ensuring stable operation of circuits in extreme electrostatic events. It is the preferred component to enhance the electrostatic protection performance of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HAZ4512-01F(DFN1610-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz4512-01f-dfn1610-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:15:47</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is designed specifically for single signal lines, with a withstand voltage of 12V and excellent 65A peak pulse current processing ability, constructing a strong electrostatic protection network. Although the capacitance value is 500pF, it is more suitable for applications where signal speed requirements are not so strict but higher transient energy processing capabilities are required. It can effectively ensure the stability and safety of the circuit in harsh environments and is a powerful assistant to improve system robustness.]]></description>
</item>
<item>
	<title><![CDATA[HSTS321033B401(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsts321033b401-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:15:35</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed for single channel circuit protection and has a 3.3V voltage withstand voltage (VRWM), suitable for low voltage circuit environments. Its 20A peak pulse current processing capability (IPP) significantly enhances the effectiveness of electrostatic protection, providing an indestructible electrostatic barrier for equipment. Although the capacitance value is 65pF, it can still be widely used in high-speed signal paths with less stringent requirements, ensuring signal integrity and equipment safety.]]></description>
</item>
<item>
	<title><![CDATA[HPT03D3CE(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpt03d3ce-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:15:23</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially customized for single channel circuits, with a 3.3V working voltage VRWM suitable for low voltage scenarios. The peak pulse current IPP processing capability of up to 20A provides excellent electrostatic protection level for the circuit. Although the capacitance value CJ is 65pF, it can still meet the needs of most data circuits while ensuring strong protection, making it an efficient solution to protect sensitive electronic devices from electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HSG3D15B36MA(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsg3d15b36ma-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:15:12</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is optimized for single signal protection, with a withstand voltage of up to 36V and the ability to withstand transient currents of 4.5A, providing strong electrostatic protection for circuits. Its capacitance value is only 0.8pF, greatly reducing signal attenuation and ensuring the integrity of high-speed data transmission. It is a precise choice for protecting high-performance electronic devices from electrostatic interference, improving overall system performance and reliability.]]></description>
</item>
<item>
	<title><![CDATA[HESDALD18BCX(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdald18bcx-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:15:00</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode adopts a bidirectional design, optimized for single channel circuit protection. It can operate stably at a working voltage of 18V and has excellent 7A peak pulse current processing ability, effectively resisting transient high-voltage shocks. Its capacitance value is as low as 1pF, ensuring signal integrity, especially suitable for electrostatic protection of high-frequency data lines, without introducing additional signal delay, providing efficient and sophisticated protection solutions for sensitive electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HVESD08C1-HD1HG3-08(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hvesd08c1-hd1hg3-08-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:14:48</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is specifically designed for 8V voltage systems, providing precise electrostatic protection through a single channel. It can withstand transient current shocks of 6A, ensuring stable operation of the circuit in high-voltage electrostatic environments. The low capacitance design of 45pF reduces the impact on signal transmission and is suitable for electronic devices that require both high-speed data transmission and electrostatic protection. It is an ideal component for improving system robustness.]]></description>
</item>
<item>
	<title><![CDATA[HVESD05C1-HD1-G3-08(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hvesd05c1-hd1-g3-08-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:14:36</pubDate>
	<description><![CDATA[This single channel unidirectional ESD electrostatic protection diode is optimized for a 5V voltage platform and can withstand a 7A instantaneous electrostatic discharge current, providing solid protection for sensitive circuits. Although the capacitance value is 80pF, it is suitable for most non high-speed signal environments, ensuring no significant signal attenuation, and is a wise choice to strike a balance between protection and signal quality, enhancing the anti-static ability of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HTPD6V8LP-7-55(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/htpd6v8lp-7-55-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:14:24</pubDate>
	<description><![CDATA[This ESD protection diode adopts a unidirectional design, specially customized for 5V voltage level circuits, and a single channel construction focuses on point-to-point electrostatic protection. The transient current withstand capacity (IPP) of 7A effectively blocks electrostatic shocks, while the capacitance value of 80pF is slightly higher. However, in non extreme speed signal circuits, it can effectively balance electrostatic protection and signal quality, making it a carefully selected component to ensure electronic circuit stability and data security.]]></description>
</item>
<item>
	<title><![CDATA[HPESDHC2FD5VU(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdhc2fd5vu-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:14:13</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed specifically for 5V voltage systems, providing precise protection through a single channel. It can withstand a peak electrostatic discharge current of 7A, ensuring circuit safety. Although the capacitance value is 80pF, it is still suitable for most non high-speed signal lines, balancing the needs of electrostatic protection and signal integrity. It is an economical and efficient solution to protect electronic devices from electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HVESD03A1C-HD1-GS08(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hvesd03a1c-hd1-gs08-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:14:01</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is designed specifically for low voltage applications, with a VRWM of 3.3V, suitable for precision circuit protection. It has a single channel structure and can withstand transient current shocks of up to 7.5A, providing strong electrostatic protection. Although the capacitance value is 100pF, it can still meet the transmission requirements of most standard speed signals while ensuring sufficient static electricity relief in the signal line, making it a reliable choice for preventing static electricity damage in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HVESD15A1-HD1-G4-08(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hvesd15a1-hd1-g4-08-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:13:49</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed specifically for a single circuit channel, with a voltage resistance of up to 15V (VRWM) and the ability to withstand 4A transient electrostatic impact (IPP), providing stronger protection for electronic devices. Its optimized 20pF low capacitance value (CJ) ensures efficient and pure high-speed signal transmission, making it an ideal component for protecting various precision circuits and data lines.]]></description>
</item>
<item>
	<title><![CDATA[HPJSD36TS-AU(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjsd36ts-au-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:13:37</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is designed specifically for 36V voltage applications, providing precise protection through a single channel. It can withstand a peak electrostatic discharge current of 1A and has a low capacitance value of only 20pF, ensuring clear transmission of high-speed signals. It is a high-performance component that protects high-end electronic devices and data lines from electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HCEZ36V,L3F(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcez36v-l3f-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:13:25</pubDate>
	<description><![CDATA[A single channel directional ESD electrostatic protection diode specially designed for high reliability circuit protection, with a withstand voltage of 36V, ensuring circuit safety even in the event of 1A instantaneous electrostatic impact. Its ultra-low capacitance characteristic of 20pF ensures complete and non-destructive high-speed signals, making it an ideal choice for protecting modern sensitive electronic devices, such as mobile communication and data interfaces.]]></description>
</item>
<item>
	<title><![CDATA[HCESD523NC36VU(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd523nc36vu-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:13:13</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is suitable for 36V voltage systems, and the single channel design focuses on protecting the core circuit. Although the peak current withstand is 1A, its excellence lies in its ultra-low capacitance value of only 20pF, ensuring almost lossless transmission in high-speed signal paths, providing a hidden and efficient electrostatic protection solution for precision electronic and data communication equipment.]]></description>
</item>
<item>
	<title><![CDATA[HUCLAMP1201H.TCT(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/huclamp1201h-tct-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:13:02</pubDate>
	<description><![CDATA[This ESD protection diode adopts unidirectional technology and is specially designed for single circuit customization. It can operate stably at a working voltage of 12V and has a capacity to withstand 6A instantaneous impulse current, providing a strong electrostatic protection barrier for electronic devices. Its 35 picosecond low capacitance characteristic ensures the complete transmission of high-speed signals, making it a preferred device for protecting sensitive data lines in mobile devices and network communication, effectively improving the system‘s anti-static performance and data security.]]></description>
</item>
<item>
	<title><![CDATA[HVESD12C1-02VHG3-08(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hvesd12c1-02vhg3-08-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:12:50</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode has a unidirectional protection function, suitable for a single circuit path, and can operate stably under a maximum continuous working voltage of 12V. The peak pulse current processing capability of 6A provides strong armor for sensitive components on the circuit board to resist electrostatic discharge invasion. The small capacitance characteristic of 35 picosecond ensures that high-speed signal transmission is not affected, making it the preferred solution for protecting various consumer electronics and communication equipment interfaces.]]></description>
</item>
<item>
	<title><![CDATA[HVESD12C1-02V-G3-08(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hvesd12c1-02v-g3-08-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:12:38</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is specially designed for single signal lines, with a withstand voltage of 12V and the ability to withstand 6A instantaneous surge current, ensuring stable operation of the circuit in high-voltage electrostatic environments. Its compact 35pF capacitance value reduces the attenuation of high-frequency signals, making it very suitable for protecting sensitive interfaces in portable electronic devices, such as USB, HDMI, etc., from electrostatic damage, improving device durability and data transmission quality.]]></description>
</item>
<item>
	<title><![CDATA[HCESD523NC12VU(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd523nc12vu-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:12:26</pubDate>
	<description><![CDATA[A carefully crafted single channel ESD protective device with a unidirectional design, providing precise electrostatic solutions for electronic devices. The working voltage is 12V, and the peak protection current is 6A, which can effectively resist static electricity shocks and protect circuit safety. A capacitance value of 35 picoseconds ensures rapid and non-destructive signal transmission, making it an ideal choice for ensuring the safety of signal lines and data ports in high-performance electronic products such as mobile devices and communication systems.]]></description>
</item>
<item>
	<title><![CDATA[HPJSD12TS-AU(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjsd12ts-au-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:12:15</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed specifically for precision circuits, using unidirectional protection technology with a single channel configuration, and can operate stably at a working voltage of 12V. It can withstand transient surge currents of up to 6A, ensuring that sensitive components are not damaged by static electricity. The capacitance value as low as 35pF ensures signal integrity and is particularly suitable for high-speed data transmission lines, effectively preventing interference and improving system reliability.]]></description>
</item>
<item>
	<title><![CDATA[HCPDU12V0U-HF(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcpdu12v0u-hf-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:12:03</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is a unidirectional single channel configuration, with a working voltage of 12V and a transient current carrying capacity of 6A. It has a capacitance of 35pF and is suitable for circuits with high voltage and insensitivity to capacitive loads. It provides precise unidirectional electrostatic protection for sensitive electronic devices, ensuring stable system operation.]]></description>
</item>
<item>
	<title><![CDATA[HAZ9412-01H(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz9412-01h-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:11:51</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed as a single channel, with a withstand voltage of 12V, a peak instantaneous current of 6A, and a capacitance value of 35pF. It focuses on providing directional electrostatic protection for a single signal line, balancing the needs of protection efficiency and signal transmission quality. It is the preferred component to improve the safety of electrostatic sensitive components in electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HCPDH12V0UB-HF(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcpdh12v0ub-hf-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:11:39</pubDate>
	<description><![CDATA[The ESD protection diode is a unidirectional single channel type with a rated voltage of 12V, capable of withstanding 6A transient current shocks, and has a capacitance of 35pF. It is suitable for voltage sensitive applications with a certain tolerance for capacitance, providing directional electrostatic protection for key components in electronic systems, enhancing circuit stability and reliability.]]></description>
</item>
<item>
	<title><![CDATA[HVESD12-02V-G-08(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hvesd12-02v-g-08-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:11:28</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed for a single channel, with a withstand voltage of 12V, a peak current processing capacity of 6A, and a capacitance value of 35pF. It is suitable for high voltage circuit protection needs, effectively resisting electrostatic discharge, and ensuring signal transmission quality, providing professional solutions for electrostatic protection of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HAZ4012-01H(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz4012-01h-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:11:16</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is designed specifically for a single signal line, with a withstand voltage level of 12V, capable of handling 6A instantaneous current surges, and has a capacitance value of 35pF. It is suitable for situations where capacitance requirements are not strict and high voltage protection is required, providing directional electrostatic protection for electronic circuits and enhancing system robustness.]]></description>
</item>
<item>
	<title><![CDATA[HD12V0X1B2LP-7B(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hd12v0x1b2lp-7b-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:11:04</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel use, with a withstand voltage of 12V, and can effectively respond to 2A instantaneous static discharge, ensuring circuit safety. A capacitance value of 1.5pF provides a wide range of electrostatic protection solutions while ensuring signal transmission quality, making it an ideal component for preventing electrostatic damage in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HCPDWL5V0-HF(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcpdwl5v0-hf-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:10:05</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed for single channel configuration, with a withstand voltage of 5V and a peak current processing capacity of 45A, constructing a sturdy electrostatic protection network. The 15pF capacitance value is suitable for non high-speed signal environments, ensuring effective protection in various applications without affecting signal quality, adding a strong protective barrier to the stable operation of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HAOZ8231ADI-05(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haoz8231adi-05-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:09:53</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is a bidirectional single channel structure, with a withstand voltage of 5V and the ability to withstand high current surges of 45A, providing solid electrostatic protection for sensitive components on the circuit board. Although the capacitance value is 15pF, which is more suitable for low-speed signal lines, it can still effectively ensure the safety of equipment in daily use and is the preferred component for improving the electrostatic protection level of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HACPDQC5V0-HF(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hacpdqc5v0-hf-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:09:41</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single channel circuits, with a working voltage of 5V and a high pulse current processing capacity of 45A, providing strong electrostatic protection barriers for equipment. A capacitance value of 15pF is suitable for application environments that do not require strict signal rate requirements, ensuring effective protection while maintaining stable signal transmission. It is a powerful assistant to enhance the system‘s electrostatic protection capability.]]></description>
</item>
<item>
	<title><![CDATA[HVCUT0505B-HD1-GS08(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hvcut0505b-hd1-gs08-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:09:29</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel use, with a withstand voltage of 5V and a peak current carrying capacity of 45A, providing excellent electrostatic protection performance for circuits. Although the capacitance value is 15pF, it can still ensure good protection effect and signal quality in non high-speed signal transmission scenarios, making it the preferred device to improve the electrostatic protection level of electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HSESD5V0V1BLA(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsesd5v0v1bla-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:09:17</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is optimized for single channel applications, with a withstand voltage of 5V and a peak current absorption capacity of 45A, providing strong electrostatic impact protection for circuits. The 15pF capacitance value is suitable for low-frequency or non time critical signal paths, ensuring reliable protection and signal integrity in various electronic devices, and enhancing the overall level of electrostatic protection of the system.]]></description>
</item>
<item>
	<title><![CDATA[HD5V0L1B2LPSQ-7B(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hd5v0l1b2lpsq-7b-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:09:05</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is designed as a bidirectional single channel, with a rated voltage of 5V, capable of withstanding transient current surges up to 45A, providing indestructible electrostatic protection for the circuit. Although the capacitance value of 15pF is slightly higher, it can still effectively balance the needs of protection and signal transmission for non high-speed signal lines, making it the preferred component for improving the level of electrostatic protection of equipment.]]></description>
</item>
<item>
	<title><![CDATA[HESDM3051N2T5G(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdm3051n2t5g-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:08:54</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single signal protection. It is stable and reliable under a working voltage of 5V, and its 45A peak current processing ability highlights its strong electrostatic protection performance. Although the capacitance value is 15pF, suitable for applications that are less sensitive to signal delay, it is still an efficient guardian to ensure that electronic devices are not damaged by static electricity, improving the overall robustness of the system.]]></description>
</item>
<item>
	<title><![CDATA[HCESD882NC5VB(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd882nc5vb-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:08:42</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed as a single channel, with a withstand voltage of 5V and a high pulse current withstand capacity of 45A, which can strongly resist static electricity invasion and ensure circuit safety. Although the capacitance value is 15pF, it is still a reliable protection option for non high-speed signal scenarios, adding a stable electrostatic protection layer to various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HPESD5V0L1BSLAZ(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd5v0l1bslaz-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:08:30</pubDate>
	<description><![CDATA[This product is a bidirectional ESD electrostatic protection diode, specifically designed for single signal line configuration, and can operate stably at a working voltage of 5V. Its outstanding 45A peak current absorption capacity provides a powerful electrostatic protection shield for the circuit. Despite having a capacitance value of 15pF, it can still ensure sufficient signal transparency in many applications, making it an ideal choice for balancing electrostatic protection and signal integrity requirements, ensuring the stable operation of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HD5V0L1B2LP4-7B(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hd5v0l1b2lp4-7b-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:08:18</pubDate>
	<description><![CDATA[This bidirectional ESD protective diode is designed for single line deployment, with a withstand voltage of 5V and a powerful 45A peak current processing ability, which can effectively block electrostatic shocks and protect circuit safety. Although its 15pF capacitance value is relatively high, it is still suitable for situations where signal speed requirements are not so strict, providing a reliable electrostatic protection solution and enhancing the stability of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HUCLAMP3311PQTCT(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/huclamp3311pqtct-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:08:06</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed for a single signal line configuration and can operate stably at a working voltage of 3.3V. It has a 7A peak transient current withstand capacity and provides strong electrostatic protection for valuable components on the circuit board. In addition, the low capacitance value of only 10 picoseconds ensures high-speed and pure signal transmission, making it an ideal solution for preventing electrostatic damage and maintaining signal integrity in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HRCLAMP0531TQTCT(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrclamp0531tqtct-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:07:54</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode adopts a bidirectional design, optimized for single signal protection, with a withstand voltage of 5V and the ability to withstand up to 4A instantaneous current shocks, building a strong defense line for sensitive circuits. Its low capacitance value of 0.5pF ensures high speed and fidelity of signal transmission, making it an ideal solution for anti-static in precision electronic equipment and high-speed data lines.]]></description>
</item>
<item>
	<title><![CDATA[H824014(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/h824014-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:07:42</pubDate>
	<description><![CDATA[This ESD protection diode adopts unidirectional technology and is equipped with a four channel parallel design, specifically designed for protecting multiple signal lines. Stable operation at 5 volts, capable of withstanding 4 amperes of instantaneous current, and equipped with electrostatic protective armor for circuit boards. In addition, with an ultra-low capacitance value of only 0.5 picafar, it ensures smooth and unobstructed high-speed signals, making it a powerful assistant for anti-static interference in precision electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[HDESD3V3E1BL-7B(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdesd3v3e1bl-7b-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:07:31</pubDate>
	<description><![CDATA[This ESD protection device is a single channel bidirectional diode with a rated voltage VRWM of 3.3 volts, capable of withstanding a peak transient current IPP of 9 amperes, and has a 15 picosecond capacitance CJ, ensuring effective suppression of electrostatic discharge and minimizing the impact on signal transmission in highly sensitive circuit applications.]]></description>
</item>
<item>
	<title><![CDATA[HSC1205-01ETG(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsc1205-01etg-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:07:19</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for a single signal line, with a withstand voltage of 5V and the ability to withstand instantaneous current surges of up to 5.5A, ensuring system stability. Having a low capacitance value of only 10 picoseconds, it not only does not hinder the flow of high-frequency signals, but also provides an instant electrostatic discharge path, making it an ideal choice to protect precision electronic components from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HAQ1205-01ETG(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haq1205-01etg-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:07:07</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed as a bidirectional single channel, specifically designed for precision circuit protection. It can operate stably at a voltage of 5V and has a peak pulse current processing ability of 5.5A, effectively resisting transient high-voltage shocks. Its low capacitance value of 10pF ensures high-speed signal transmission without interference, providing efficient and reliable electrostatic protection solutions for sensitive electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HCDDFN2-T3.3B(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcddfn2-t3-3b-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:06:55</pubDate>
	<description><![CDATA[This device is a single channel bidirectional ESD electrostatic suppression diode with a maximum continuous operating voltage of 3.3V (VRWM), capable of withstanding 9A peak transient current (IPP) shocks, and also has a 15 picosecond low junction capacitance (CJ). It is designed specifically for high-density circuits and aims to achieve excellent signal transparency and electrostatic protection efficiency.]]></description>
</item>
<item>
	<title><![CDATA[HESDLC5V0L2B-TP(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdlc5v0l2b-tp-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:06:43</pubDate>
	<description><![CDATA[The ESD protection diode is bidirectional and designed specifically for a single signal path. It operates stably at a voltage of 5V and can withstand instantaneous current surges of up to 5.5A. It has a low capacitance value of 10 picoseconds, ensuring the non-destructive passage of high-speed signals and providing a high-performance, small-sized solution for the electrostatic protection needs of various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HPESDWC2FD5VB(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdwc2fd5vb-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:06:32</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed to be bidirectional and designed specifically for single channel applications, providing a voltage protection threshold of 5V, effectively responding to transient high voltage events. It has a peak pulse current processing capability of 2.5A, ensuring that sensitive circuits are protected from electrostatic impact. The capacitance value as low as 2.5pF ensures signal integrity, making it particularly suitable for high-speed data transmission lines without introducing significant delays, providing a stable and efficient protection solution for precision electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HUCLAMP0511P.TNT(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/huclamp0511p-tnt-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:06:20</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode adopts a bidirectional design, specifically designed for single channel circuits, with a withstand voltage of 5V and the ability to withstand 20A instantaneous high current shocks, providing comprehensive electrostatic protection for the circuit. Its low capacitance value of 40 picoseconds ensures lossless signal transmission, making it particularly suitable for high-speed signal lines, effectively enhancing the anti-interference ability and long-term reliability of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HRCLAMP0551P.TST(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrclamp0551p-tst-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:06:08</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel applications and can operate stably at 5V voltage, providing 4A peak current protection and effectively blocking electrostatic shocks. Its low capacitance characteristic of 0.5pF ensures signal integrity, making it particularly suitable for electronic devices that require high-speed data transmission and strict electrostatic protection, building a solid defense line for circuit safety.]]></description>
</item>
<item>
	<title><![CDATA[HSC1333-01ETG(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsc1333-01etg-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:05:56</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single channel circuits, operates stably at 3.3V voltage, and can withstand 7A instantaneous current shocks, building an anti-static barrier for sensitive components. A low capacitance value of only 10pF ensures smooth and unobstructed high-speed signals, making it an ideal component for protecting various precision electronic devices from electrostatic damage, improving system reliability and data transmission quality.]]></description>
</item>
<item>
	<title><![CDATA[HRCLAMP0551P.TNT(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrclamp0551p-tnt-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:05:44</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially designed for single signal protection, with a withstand voltage of 5V and a peak current processing ability of 4A, which can strongly resist electrostatic shocks. The low capacitance design of 0.5pF ensures high-speed signal transmission without attenuation, making it the preferred component for protecting precision circuits and enhancing equipment‘s ability to resist electrostatic interference, making system operation more stable and reliable.]]></description>
</item>
<item>
	<title><![CDATA[HAZ1213-04F(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz1213-04f-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:05:33</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed specifically for precision circuits and adopts unidirectional protection technology. It is equipped with 4 channels and can effectively block transient impacts caused by voltages above 3.3V. Each channel can withstand a peak current of up to 4A and has a low capacitance value of 0.6pF, ensuring high-speed signal integrity. It is very suitable for protecting sensitive electronic devices from electrostatic discharge damage and ensuring stable system operation.]]></description>
</item>
<item>
	<title><![CDATA[HSTN101050B101(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hstn101050b101-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:05:21</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode has a bidirectional protection function, suitable for single line configurations, with a working voltage of up to 5V, capable of withstanding instantaneous current surges of 5.5A, and a capacitance value as low as 10pF. It does not affect the transmission of high-frequency signals and provides a reliable electrostatic protection barrier for electronic devices. It is the preferred component for protecting precision circuits.]]></description>
</item>
<item>
	<title><![CDATA[HCDSOT236-0504LC(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcdsot236-0504lc-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:05:09</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed with 4 channels, specifically designed to protect multi line circuits. Stable operation under 5V working voltage, capable of withstanding 4A instantaneous current surge, protecting the circuit from electrostatic damage. A low capacitance value of 0.5pF ensures high-speed data transmission without interference, making it an exquisite choice in modern electronic devices to ensure signal purity and system safety.]]></description>
</item>
<item>
	<title><![CDATA[HRCLAMP3331PQTCT(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrclamp3331pqtct-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:04:57</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for 3.3V voltage applications, with a single channel design. 4A peak current processing capability provides powerful electrostatic impact protection for circuits. The ultra-low capacitance value of 0.3pF ensures lossless transmission of high-speed signals, making it the preferred anti-static solution in the fields of precision electronics and high-speed communication.]]></description>
</item>
<item>
	<title><![CDATA[HAOZ8251ADI-05(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haoz8251adi-05-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:04:45</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specifically designed for 3.3V systems and features a single path design. It can withstand pulse currents of up to 5A, with a capacitance value of 12pF, ensuring comprehensive electrostatic protection while reducing interference with high-frequency signals. It is the preferred component for protecting precision circuits and sensitive electronic equipment, improving the overall protection level and reliability of the system.]]></description>
</item>
<item>
	<title><![CDATA[HGG040205170N2P(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgg040205170n2p-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:04:34</pubDate>
	<description><![CDATA[This product is a bidirectional ESD protection diode designed specifically for a single channel, capable of stable operation at 5V voltage. It has a peak current processing capacity of 5.5A and a capacitance value of only 10 picoseconds, ensuring efficient electrostatic protection without affecting signal transmission speed and quality. It is an ideal component for internal protection in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HGG040205100N2P(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgg040205100n2p-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:04:22</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is specially designed for single channel circuits. It is stable and reliable under a working voltage of 5V, and has a strong 5.5A peak current processing ability, effectively resisting electrostatic shocks. The 10pF low capacitance design ensures high-speed signal without delay, making it an ideal choice for protecting various precision electronic devices such as mobile communication, IoT modules, etc., enhancing circuit anti-static interference ability, and ensuring system operation safety.]]></description>
</item>
<item>
	<title><![CDATA[HPESD5V0F1BSF(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd5v0f1bsf-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:04:10</pubDate>
	<description><![CDATA[This electrostatic and surge protection device (TVS/ESD) is designed to provide efficient transient voltage suppression, ensuring the safety of electronic devices in the face of voltage transients. It has a peak pulse current capacity IPP of 4.5A, which can quickly respond and absorb excessive current, protecting the circuit from damage. The maximum reverse working voltage VRMM is 5V, suitable for low voltage applications. This device has a small capacitance CJ of 0.25pF, which hardly affects signal integrity and is particularly suitable for protecting high-speed data transmission lines. As a 1-channel, Bi bidirectional product, it can handle bidirectional voltage fluctuations, ensuring the stability and security of data transmission for internal connections or communication interfaces of consumer electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HVS5V0BL1QST18R(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hvs5v0bl1qst18r-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:03:58</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is a bidirectional single channel configuration that can operate stably at 5V voltage and has a peak current processing capacity of 4A, providing comprehensive electrostatic protection for the circuit. Its low capacitance value of only 0.5pF ensures high-speed and pure signal transmission, making it the preferred component for protecting modern high-density, high-speed electronic devices from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HSP4322-01ETG(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsp4322-01etg-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:03:47</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode adopts a bidirectional design, specifically designed for single channel protection, with a working voltage of up to 5V and the ability to withstand transient current surges of 4A, ensuring that the circuit is foolproof. Its outstanding 0.5pF low capacitance characteristic ensures signal integrity, especially suitable for electrostatic protection of high-speed data interfaces, providing stable and efficient electrostatic solutions for electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HAQ4337-01ETG(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haq4337-01etg-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:03:35</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is designed in a unidirectional manner and is suitable for single line anti-static protection. It operates at a voltage of up to 5V and can withstand 4A instantaneous current shocks, ensuring circuit safety. Its capacitance value is as low as 0.6pF, reducing interference with high-speed signals. It is the preferred component for protecting precision electronic equipment and improving the system‘s ability to resist electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HAQ24-02HTG(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haq24-02htg-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:03:23</pubDate>
	<description><![CDATA[This ESD protection diode adopts a unidirectional design and has a dual channel structure, with a withstand voltage of 24V and a peak current processing capacity of 7A, which can effectively block electrostatic discharge and protect the circuit. Its 40 picosecond capacitance value is small, which helps to reduce signal attenuation and ensure smooth high-speed data transmission. It is an ideal guardian of precision circuits and sensitive electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HAQ12-02HTG(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haq12-02htg-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:03:11</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is a unidirectional type with dual channels and can operate stably at 12V voltage. It has an instantaneous current withstand capacity of 11A and provides a strong electrostatic barrier for the circuit. The small capacitance design of 90 picosecond ensures clear and error free high-speed signal transmission, making it an ideal electrostatic protection device for precision circuits and data lines. Wear invisible electrostatic protection clothing for your electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HNUP2115LT1G(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hnup2115lt1g-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:02:59</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed with dual channels to meet diverse needs. It is stable and reliable under 24V working voltage, and has a 4A peak current processing ability to effectively resist transient high voltage. It also has a 10pF low capacitance characteristic, ensuring complete transmission of high-speed signals and providing an optimal solution for balancing performance and efficiency in electrostatic protection of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HSZESD5B5.0ST1G(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hszesd5b5-0st1g-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:02:48</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed as a single channel and can operate stably at 5V voltage. It has a high transient current processing capacity of 20A and a capacitance value of 33pF, ensuring effective suppression of electrostatic interference while having minimal impact on signal transmission. It is an ideal device for protecting sensitive electronic circuits.]]></description>
</item>
<item>
	<title><![CDATA[HAQHV24-01ETG-C(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haqhv24-01etg-c-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:02:36</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is specially designed for single channel configuration, with a voltage resistance of up to 24V and the ability to withstand 5A instantaneous current shocks, providing a stable electrostatic protection barrier for electronic devices. The 10pF capacitance has a small value, reducing the impact on signal transmission and ensuring smooth and unobstructed high-speed data lines. It is the preferred device for anti-static interference in precision circuits and communication technology, ensuring stable and safe equipment operation.]]></description>
</item>
<item>
	<title><![CDATA[HXBP06V0U2MR-G(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hxbp06v0u2mr-g-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:02:24</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is equipped with dual channels and a working voltage of VRWM as low as 5V. It can withstand transient current shocks of 4A and has an ultra-low capacitance value of only 0.5pF, ensuring that high-speed signal transmission is not affected by capacitance. It provides accurate electrostatic protection solutions for your small electronic devices or portable products, improving circuit stability and safety.]]></description>
</item>
<item>
	<title><![CDATA[HSZSM05T1G(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hszsm05t1g-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:02:12</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode features a dual channel design, carefully crafted for circuit safety. Stable and reliable under a working voltage of 5V, with a peak current processing capacity of 17A, providing a solid electrostatic protection net for the equipment. A capacitance value of 180 picoseconds ensures unobstructed high-speed signal transmission and is an efficient solution for protecting precision electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[HESD5581N2T5G(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5581n2t5g-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:02:01</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel circuits, with a withstand voltage of 5V and an instantaneous current withstand capacity of 5.5A, ensuring that the circuit is not damaged by static electricity. Its 10pF low capacitance characteristic maintains signal purity, making it particularly suitable for protecting portable devices and high sensitivity circuits, effectively improving the system‘s anti-static level and data transmission quality.]]></description>
</item>
<item>
	<title><![CDATA[HSZESD5B5.0ST5G(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hszesd5b5-0st5g-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:01:49</pubDate>
	<description><![CDATA[This ESD protection diode is a bidirectional single channel structure, with a withstand voltage of 5V, a 20A high current pulse withstand capacity, and a low capacitance characteristic of 33pF. It can effectively block electrostatic discharge interference while reducing the impact on high-speed signal transmission, providing strong and delicate protection for various precision electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HSZSM12T1G(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hszsm12t1g-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:01:37</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode adopts unidirectional technology and is equipped with dual channels. It is designed specifically for 12V voltage systems and can withstand 11A peak current shocks, providing strong electrostatic protection for the circuit. Its low capacitance value of 90pF ensures the non-destructive passage of high-speed signals, making it the preferred component for protecting electronic devices from electrostatic interference and maintaining data transmission quality.]]></description>
</item>
<item>
	<title><![CDATA[HAOZ8831ADI-05(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haoz8831adi-05-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:01:25</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed for single line deployment, with a withstand voltage of 5V and a peak current processing efficiency of 4A, providing an invisible "anti-static vest" for circuit boards. In addition, with a small capacitance value of only 0.5pF and unrestricted high-speed data transmission, it is an efficient solution for modern electronic devices to prevent electrostatic interference, ensuring signal purity and worry free system operation.]]></description>
</item>
<item>
	<title><![CDATA[HSRV05-4B(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsrv05-4b-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:01:13</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode adopts a unidirectional design and has four parallel channels, providing efficient protection for multi line interfaces. At a maximum continuous working voltage of 5 volts, it can withstand a peak pulse current of 4 amperes to ensure circuit safety. Its low capacitance value of 0.5 picoseconds reduces signal attenuation, making it particularly suitable for high-speed signal transmission applications and adding an intangible electrostatic barrier to electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HAQ4023-01FTG-C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haq4023-01ftg-c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:01:01</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is optimized for single channel circuits, with a withstand voltage of 15V and the ability to withstand 10A peak current shocks, providing an effective barrier for sensitive electronic components. The 1pF low capacitance design ensures high-speed signal transmission without interference, making it an efficient solution to protect precision circuits from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HSZNUP2115LT1G(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsznup2115lt1g-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:00:50</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially designed with a dual channel structure, with a withstand voltage of 24V and an instantaneous ability to withstand 4A current shocks. Coupled with its low capacitance characteristic of 10pF, it can effectively block electrostatic interference and ensure signal transmission is not affected, providing a stable and efficient protective barrier for various precision circuits.]]></description>
</item>
<item>
	<title><![CDATA[HSPHV24-01KTG-C(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsphv24-01ktg-c-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:00:38</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel circuits, with strong 24V working voltage tolerance and excellent 5A peak current absorption efficiency, forming a strong shield for circuit protection. The 10pF capacitance value finely balances the speed of protection and signal passage, making it particularly suitable for application scenarios that require both efficient anti-static and maintenance of high-frequency signal purity. It is the guardian of modern electronic equipment signal circuits.]]></description>
</item>
<item>
	<title><![CDATA[HNNCD36DA(0)-T1-AT(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hnncd36da-0-t1-at-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:00:26</pubDate>
	<description><![CDATA[We introduce this high-performance unidirectional ESD electrostatic protection diode, which focuses on defending against a single signal path, with a working voltage range of up to 36V and a transient current withstand capacity of 6A, providing solid electrostatic protection for high-voltage circuits. The 30pF capacitor design effectively blocks electrostatic interference without sacrificing too much signal speed, making it a carefully selected component to ensure the safe operation of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HCDSOD323-T08LC(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcdsod323-t08lc-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:00:14</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is specially designed for single channel circuits, with a withstand voltage of 8 volts and the ability to withstand an instantaneous current of 18 amperes, providing a strong electrostatic protection shield for the circuit. The capacitance value of 1 picosecond ensures fast and non-destructive signal transmission, and is a selected component for electrostatic protection on precision circuits and high-speed data lines, adding stable and reliable guarantees to equipment operation.]]></description>
</item>
<item>
	<title><![CDATA[HACPDUC5V0-HF(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hacpduc5v0-hf-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 08:00:02</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is specially designed for single channel circuits, with wide adaptability to 5V working voltage and strong 9A peak current processing ability, effectively intercepting static electricity threats and ensuring circuit safety. The exquisite design of the 15pF capacitor balances protection efficiency and signal transmission quality, making it the preferred solution for electrostatic protection in modern electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[HCFTVS5V0BULC(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcftvs5v0bulc-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:59:51</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for a single signal line, with a withstand voltage of 5V and a peak current processing capacity of 4A, which can effectively resist electrostatic shocks and protect the circuit. Its ultra-low capacitance of 0.5pF ensures non-destructive passage of high-speed signals, making it an ideal component for electrostatic protection in small electronic devices and high-frequency applications, enhancing system immunity.]]></description>
</item>
<item>
	<title><![CDATA[HAZ4007-01H(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz4007-01h-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:59:39</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed specifically for unidirectional circuits and is equipped with excellent electrostatic protection performance. It can withstand a continuous operating voltage of up to 7 volts (VRWM) and instantly carry a peak current of 7 amperes (IPP) while handling only a single channel, ensuring that sensitive electronic devices are protected from electrostatic shocks. Its internal capacitance value is as low as 60 picoseconds, which helps reduce signal attenuation and is very suitable for precision circuit applications with high requirements for speed and protection.]]></description>
</item>
<item>
	<title><![CDATA[HSC1210-01ETG(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsc1210-01etg-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:59:27</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single channel circuits, with a withstand voltage of 5V and a peak current capacity of 20A, providing strong electrostatic protection for electronic devices. The low capacitance characteristic of 40pF ensures efficient and pure signal transmission, making it an ideal solution to ensure the safety of sensitive circuit components and improve system stability, especially suitable for applications such as high-speed data interfaces.]]></description>
</item>
<item>
	<title><![CDATA[HAQ4022-01FTG-C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haq4022-01ftg-c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:59:15</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially designed for single channel circuits. It operates stably at a working voltage of 12V and has a peak current processing capacity of 12A, providing strong resistance to electrostatic shocks. The 1pF ultra-low capacitance design ensures zero delay transmission of high-speed signals, making it the preferred component for protecting high-end electronic devices and maintaining signal purity.]]></description>
</item>
<item>
	<title><![CDATA[HSZESD7361XV2T5G(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hszesd7361xv2t5g-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:59:04</pubDate>
	<description><![CDATA[This single channel unidirectional ESD protection diode is customized for 5V voltage systems and can withstand 4A instantaneous electrostatic impact, ensuring circuit safety. Its ultra-low 0.4pF capacitance value minimizes signal interference, making it the preferred choice for electrostatic protection in high-speed signal transmission and precision electronic equipment, providing your device with invisible electrostatic protection clothing.]]></description>
</item>
<item>
	<title><![CDATA[HESD7361XV2T5G(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd7361xv2t5g-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:58:52</pubDate>
	<description><![CDATA[This single channel unidirectional ESD electrostatic protection diode has a working voltage of 5V and a peak protection current of 4A, making it an electrostatic nemesis for precision circuits. Its excellent 0.4pF low capacitance design ensures smooth and unobstructed high-speed signals, providing invisible and powerful protective barriers for high data rate applications such as USB interfaces and HDMI, keeping electronic devices away from static hazards.]]></description>
</item>
<item>
	<title><![CDATA[HSTN061033B101(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hstn061033b101-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:58:40</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for 3.3V voltage systems and adopts a single channel architecture. It can withstand an instantaneous current impulse of 5A and has a capacitance value of 12pF, ensuring effective electrostatic protection without affecting clear signal transmission. It is an ideal component for protecting electronic devices from electrostatic damage and enhancing system stability.]]></description>
</item>
<item>
	<title><![CDATA[HSTN101033B101(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hstn101033b101-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:58:28</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for a single channel and can operate stably at a working voltage of 3.3V, providing a peak current protection of 7A, effectively resisting electrostatic discharge, and ensuring circuit safety. Its compact 10pF capacitance ensures high-speed signal transmission without delay, making it very suitable for protecting data circuits in sensitive electronic devices and enhancing the overall anti-interference ability of the system.]]></description>
</item>
<item>
	<title><![CDATA[HCPDQC5V0USP-HF(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcpdqc5v0usp-hf-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:58:16</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed specifically for single line protection and can operate stably at 5V voltage, providing up to 4A instantaneous current protection and effectively resisting electrostatic shocks. Its capacitance value is as low as 0.5pF, ensuring lossless transmission of high-speed signals, making it an ideal choice for protecting sensitive circuits in various precision electronic devices such as mobile devices and IoT products, enhancing system immunity, and ensuring stable operation.]]></description>
</item>
<item>
	<title><![CDATA[HCESD0603NC3V3B-M(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd0603nc3v3b-m-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:58:04</pubDate>
	<description><![CDATA[This product is a bidirectional ESD electrostatic protection diode designed specifically for single channel 3.3V systems. With a 5A instantaneous current withstand capacity and a 12pF capacitance value, it ensures strong electrostatic protection performance while maintaining signal transmission quality. It is a reliable partner for precision circuits and sensitive equipment to prevent electrostatic impact, building a solid defense line for electronic system stability.]]></description>
</item>
<item>
	<title><![CDATA[HCESD1006LC5VBS(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd1006lc5vbs-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:57:53</pubDate>
	<description><![CDATA[This bidirectional ESD protective diode is designed specifically for single channel applications, with a maximum continuous operating voltage of 5V and the ability to withstand 2.5A instantaneous current shocks, providing comprehensive electrostatic protection for circuits. A low capacitance value of 2.5pF ensures smooth and non-destructive high-speed signals, making it an efficient solution to protect electronic devices from electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HCESD1006LC5VBL-M(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd1006lc5vbl-m-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:57:41</pubDate>
	<description><![CDATA[Carefully designed bidirectional ESD protection diode, designed specifically for single signal path service, stable and reliable under 5V working voltage, with 2.5A peak current processing ability to effectively resist electrostatic threats. The 2.5pF low capacitance characteristic ensures that high-speed signals pass without delay, providing both concealed and powerful electrostatic protection for modern microelectronic applications.]]></description>
</item>
<item>
	<title><![CDATA[HCESD1006UC5VU(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd1006uc5vu-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:57:29</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is designed for single channel applications and can operate stably at a working voltage of 5 volts. It has a peak current processing capacity of 4 amperes and provides strong electrostatic protection for circuit boards. Its capacitance value as low as 0.6 picoseconds ensures that high-speed signals pass without delay, making it an ideal device for protecting sensitive electronic components and improving the system‘s electrostatic protection performance.]]></description>
</item>
<item>
	<title><![CDATA[HD5V0L1B2TQ-7(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hd5v0l1b2tq-7-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:57:17</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed as a single channel, with a withstand voltage of 5V, enhancing the circuit protection range. The 9A peak current processing capability effectively blocks electrostatic discharge and builds a strong defense line for sensitive electronic components. A 15pF capacitor, although slightly larger, can still ensure no significant signal attenuation in most applications, making it an ideal device for achieving efficient electrostatic protection.]]></description>
</item>
<item>
	<title><![CDATA[HSTN061050B101(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hstn061050b101-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:57:05</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is optimized for single circuit protection, with a voltage breakdown threshold of 5V, which can effectively cope with 9A peak transient current. Its exquisite 15pF capacitance value ensures uninterrupted high-speed signal transmission. It performs excellently in preventing electrostatic damage and is an ideal choice for protecting precision electronic equipment from electrostatic impact and ensuring stable operation.]]></description>
</item>
<item>
	<title><![CDATA[HAQ15-02HTG(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haq15-02htg-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:56:53</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode adopts a unidirectional mechanism and has dual channel protection, ensuring the safe operation of electronic devices under a working voltage of 15V. At the same time, it can withstand transient current shocks of 10A, providing a strong anti-static barrier for the circuit. Its low capacitance design of 60 picoseconds helps reduce signal attenuation, making it particularly suitable for high-speed data transmission and effectively enhancing the stability and reliability of electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[HSTS521050B750(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsts521050b750-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:56:41</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single channel applications, with excellent withstand voltage of 5V and 8A peak current processing performance. It also has a low capacitance characteristic of 10pF, which can effectively intercept electrostatic shocks and ensure efficient and pure signal transmission, building a solid defense line for the internal safety of modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HAQ4024-01FTG-C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haq4024-01ftg-c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:56:29</pubDate>
	<description><![CDATA[This bidirectional ESD protective diode is designed specifically for single channel applications, with stable operation under 24V working voltage and 6A peak current processing ability to effectively block electrostatic shocks. The 1.3pF ultra-low capacitance value ensures high-speed and pure signal transmission, making it an ideal electrostatic protection element for precision electronics and high-speed communication interfaces, ensuring the safety and reliability of equipment in complex electromagnetic environments.]]></description>
</item>
<item>
	<title><![CDATA[HACPDQC5V0CSP-HF(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hacpdqc5v0csp-hf-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:56:18</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed for single line configuration, with excellent performance at a working voltage of 5V, capable of withstanding 3A peak current shocks, achieving bidirectional electrostatic protection. The small capacitance value of 0.8pF ensures high-speed signal transmission without delay, making it an ideal choice to protect various precision electronic devices and high-frequency data lines from electrostatic damage, enhancing product reliability and data security.]]></description>
</item>
<item>
	<title><![CDATA[HSTS521050B250(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsts521050b250-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:56:06</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode adopts a bidirectional structure, specifically configured for a single signal line, with a withstand voltage of 5V and can withstand transient current surges up to 2.5A. It also has a built-in small capacitor of only 3pF, ensuring that high-speed signal transmission is not disturbed, providing an efficient and compact solution for the electrostatic protection needs of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HCPDUR5V0-HF(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcpdur5v0-hf-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:55:54</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel applications, with a withstand voltage of 5V, suitable for a wider range of voltage protection scenarios. The 9A peak pulse current processing efficiency provides strong electrostatic shock resistance for circuit boards. Despite having a 15pF capacitor, it still ensures high-quality signal transmission and is the preferred component for electrostatic protection in precision electronic and communication equipment.]]></description>
</item>
<item>
	<title><![CDATA[HNUP2115LT3G(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hnup2115lt3g-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:55:42</pubDate>
	<description><![CDATA[Carefully crafted bidirectional ESD protection diode, equipped with dual channels, withstand voltage of 24V, peak current carrying capacity of 4A, significantly improving system immunity. The ultra-low 10pF capacitance value ensures smooth and unobstructed high-speed signals, making it an ideal choice to protect sensitive electronic devices from electrostatic impact damage, ensuring the safety of your circuits.]]></description>
</item>
<item>
	<title><![CDATA[HPESD5V0S1UJF(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd5v0s1ujf-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:55:30</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode has a rated voltage of 5V and can effectively block electrostatic interference. Its peak current carrying capacity of 28A ensures excellent transient protection performance. The design of a 200 picosecond capacitance value helps to reduce losses and delays in signal transmission, making it particularly suitable for protecting high-frequency and sensitive electronic circuits, and improving the overall anti-static ability of the system.]]></description>
</item>
<item>
	<title><![CDATA[HESDBK3V3(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdbk3v3-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:55:18</pubDate>
	<description><![CDATA[This ESD protection device is a single channel bidirectional diode with a rated voltage VRWM of 3.3V. It has a 9A peak transient current IPP processing capability and a low equivalent capacitance CJ of 15pF. The aim is to provide efficient electrostatic discharge protection for circuits, ensuring signal integrity and non damage, and is suitable for electrostatic protection design in high sensitivity electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[HESD5V0L1B02VH6327XTSA1(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5v0l1b02vh6327xtsa1-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:55:06</pubDate>
	<description><![CDATA[This bidirectional single channel ESD electrostatic protection diode has a working voltage VRWM of 5V and can withstand 8A instantaneous current shocks. It has a capacitance value as low as 10pF, ensuring smooth and non-destructive high-speed signals. As a double-edged guardian of circuits, it provides comprehensive electrostatic protection while ensuring high-quality signal transmission, adding strong guarantees to the stable operation of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HCDSOD323-T05LC(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcdsod323-t05lc-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:54:55</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for a single signal line, with a voltage protection level of 5V, capable of withstanding 4A instantaneous current shocks, and has an ultra-low 1pF capacitance value, ensuring that high-speed signals pass without delay. It provides exquisite electrostatic protection for various electronic devices and protects core components from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HSZESD7361P2T5G(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hszesd7361p2t5g-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:54:43</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed specifically for single channel circuits, with a working voltage of VRWM of 5V and a peak current IPP of up to 4A. It can effectively intercept electrostatic discharge and protect circuit components. Its low capacitance value is only 0.5pF, ensuring signal integrity and high-speed passage. It is the preferred solution for protecting portable devices and precision components in communication systems, enhancing the system‘s ability to resist electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HACPDQC5V0USP-IPHF(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hacpdqc5v0usp-iphf-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:54:31</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode focuses on single signal path protection and can provide stable service at a working voltage of 5V. With a peak current capacity of 4A, it builds a solid defense line for electronic equipment anti-static. Its low capacitance characteristic of 0.5pF ensures high-speed and clear signal transmission, making it an indispensable guardian in various precision circuits and sensitive electronic applications, enhancing the overall robustness and data security of the system.]]></description>
</item>
<item>
	<title><![CDATA[HESDL3V3LB-TP(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdl3v3lb-tp-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:54:19</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode adopts a bidirectional design, optimized for a single signal path. 3.3V maximum continuous operating voltage (VRWM) and 7A peak transient current processing capability (IPP) form a solid defense line to resist electrostatic interference. A capacitance value (CJ) as low as 10pF ensures that high-speed signal transmission is not affected, making it an ideal choice for ensuring electronic device interface safety and improving system stability.]]></description>
</item>
<item>
	<title><![CDATA[HSP0402U-ULC-02ETG(DFN1006-3L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsp0402u-ulc-02etg-dfn1006-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:54:07</pubDate>
	<description><![CDATA[We introduce this high-performance ESD electrostatic protection diode, with a unidirectional design and a dual channel structure. It operates at a VRWM voltage of 5V and can withstand up to 3A of instantaneous surge current, ensuring the safety of the circuit under electrostatic impact. In addition, with a low capacitance value of only 0.45pF, it greatly reduces signal attenuation and is an ideal choice to protect high-speed data interfaces from static electricity. Wear invisible protective clothing for your electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HXBP1011-G(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hxbp1011-g-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:53:55</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is a unidirectional type designed specifically for single channel circuits, with a withstand voltage of 5V and a peak instantaneous current processing capacity of 9.4A. It has a capacitance value of 80pF and is suitable for electrostatic protection of low-speed signal lines, ensuring that the equipment is free from electrostatic pulse interference and improving system stability and reliability.]]></description>
</item>
<item>
	<title><![CDATA[HAQ3041-01ETG(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haq3041-01etg-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:53:44</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode has a unidirectional structure, suitable for single line protection, can operate normally at 5V voltage, has 4A peak current absorption capacity, and can strongly defend against electrostatic discharge. Its capacitance value is only 0.6pF, which has little impact on high-speed signal transmission. It is an ideal choice for protecting precision circuits and improving the level of electrostatic protection in the system.]]></description>
</item>
<item>
	<title><![CDATA[HRSBC6.8CMT2N(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrsbc6-8cmt2n-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:53:32</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially designed for single channel protection, with a withstand voltage of 5V, and can withstand up to 3A instantaneous current in both directions, building a solid electrostatic protection network for sensitive circuits. A low capacitance value of 0.8pF ensures smooth and unobstructed signals, making it the preferred component for preventing electrostatic damage in high-end consumer electronics and communication equipment, enhancing system performance and durability.]]></description>
</item>
<item>
	<title><![CDATA[HSZESD7361XV2T1G(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hszesd7361xv2t1g-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:53:20</pubDate>
	<description><![CDATA[This single channel unidirectional ESD protection diode is optimized for 5V voltage systems and can withstand 4A instantaneous static discharge current, providing robust protection for the circuit. Its ultra-low capacitance characteristic of 0.4pF ensures signal integrity and is particularly suitable for high-speed data interfaces and precision electronic devices, effectively isolating static threats and ensuring stable system operation.]]></description>
</item>
<item>
	<title><![CDATA[HVCUT03E1-SD0-G4-08(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hvcut03e1-sd0-g4-08-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:53:08</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is specially designed for 3.3V circuits, with exquisite single channel design. The 5A peak current absorption and 12pF low capacitance characteristics achieve efficient electrostatic protection and signal integrity, making it the preferred solution to protect sensitive electronic components from electrostatic damage, enhancing system robustness and reliability.]]></description>
</item>
<item>
	<title><![CDATA[HESD5B5.0ST5G(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5b5-0st5g-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:52:56</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is optimized for single channel applications, with a maximum operating voltage of 5V, supporting 20A transient current absorption, and a capacitance value of 33pF, ensuring signal clarity and equipment safety even under high-energy electrostatic shocks. It is the preferred solution for electronic device interface protection.]]></description>
</item>
<item>
	<title><![CDATA[HPESDNC2FD5VBL(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdnc2fd5vbl-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:52:44</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is designed with a bidirectional single channel and a working voltage of 5V VRWM. It can effectively withstand transient current surges of up to 5.5A, and its capacitance value as low as 10pF ensures the non-destructive passage of high-speed signals. It is very suitable for protecting precision circuits in various consumer electronics and communication devices, preventing static damage, and enhancing the overall robustness of the system.]]></description>
</item>
<item>
	<title><![CDATA[HSP4203-01FTG-C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsp4203-01ftg-c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:52:32</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel circuits and can operate stably at a working voltage of 3.3V. It has an ultra-low 1pF capacitance, ensuring lossless transmission of high-speed signals. Its 20A peak pulse current withstand capacity provides a strong electrostatic protection barrier for circuits, making it a carefully selected component to ensure the safety of sensitive electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HAQ3530-01LTG(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haq3530-01ltg-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:52:21</pubDate>
	<description><![CDATA[This single channel directional ESD protection diode has a working voltage of 5V and can effectively withstand 4A electrostatic impact, providing protection for precision circuits. Its ultra-low capacitance value of 0.4pF greatly reduces signal attenuation, making it the preferred component for high-speed data transmission and anti-static interference in sensitive electronic devices, ensuring pure signal transmission and protection performance that goes hand in hand with speed.]]></description>
</item>
<item>
	<title><![CDATA[HSP3031-01ETG(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsp3031-01etg-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:52:09</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is designed specifically for a single signal line and can operate stably at a working voltage of 5V, providing up to 4A instantaneous current protection and effectively resisting electrostatic shocks. Its ultra-low 0.6pF capacitance ensures high-speed and non-destructive signal transmission, making it an efficient component for protecting high-performance electronic devices and high-frequency circuits from electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HNNCD36DT(0)-T1-AT(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hnncd36dt-0-t1-at-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:51:57</pubDate>
	<description><![CDATA[This high-performance bidirectional ESD protection diode is designed specifically for single signal lines, with a withstand voltage value of 36V, providing a wider protection range. 4.5A peak current processing capability ensures rapid suppression of transient voltage. The 20 picosecond low capacitance characteristic is perfectly adapted to high-speed data transmission scenarios, fearless of signal attenuation. It is the preferred component for preventing electrostatic damage in high-end electronic devices and communication systems, ensuring signal purity and equipment safety.]]></description>
</item>
<item>
	<title><![CDATA[HCDSOD323-T15LC(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcdsod323-t15lc-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:51:45</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially designed for single channel circuits, with a withstand voltage of 15 volts and a peak current capacity of 10 amperes, providing strong electrostatic protection for electronic devices. The design of 1-picosecond capacitance ensures the non-destructive transmission of high-speed signals and the stability of system operation, making it the preferred component for precision circuit protection.]]></description>
</item>
<item>
	<title><![CDATA[HSM15.TCT(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsm15-tct-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:51:33</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode, with its unidirectional structure and dual channel design, brings a balanced protective effect to the circuit. It can operate stably at a voltage of 15V, withstand the impact of 10A instantaneous high current, and effectively block the threat of static electricity. In addition, the low capacitance value of only 60pF ensures efficient and pure signal transmission, making it an ideal choice for protecting precision electronic equipment and making data transmission more secure.]]></description>
</item>
<item>
	<title><![CDATA[HESDM3033N2T5G(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdm3033n2t5g-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:51:22</pubDate>
	<description><![CDATA[The ESD protection element is a bidirectional single channel configuration, with a rated voltage of 3.3V, capable of withstanding 9A transient current shocks, and a capacitance of only 15pF. It is suitable for protecting electronic circuits from electrostatic damage and ensuring signal integrity.]]></description>
</item>
<item>
	<title><![CDATA[HESD7361P2T5G(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd7361p2t5g-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:51:10</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed specifically for a single channel, with a withstand voltage of 5V and the ability to withstand 4A instantaneous high current shocks, providing solid electrostatic protection for circuits. Its capacitance value as low as 0.5pF ensures non-destructive high-speed signal transmission and is the preferred device to protect various small electronic devices, mobile communication components, etc. from static damage, ensuring the stability of equipment operation and data security.]]></description>
</item>
<item>
	<title><![CDATA[HSTN101120B111(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hstn101120b111-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:50:58</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for a single signal path, with a withstand voltage of 12 volts and a peak current capacity of 5 amperes, providing excellent electrostatic protection for circuit boards. Despite having a capacitance value of 10 picoseconds, it is still an ideal choice for balancing signal transmission and electrostatic protection needs in many electronic devices, ensuring worry free operation of the system in high electrostatic environments.]]></description>
</item>
<item>
	<title><![CDATA[HSTN102050UL80(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hstn102050ul80-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:50:47</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode has a bidirectional protection function, designed specifically for a single signal line, with a withstand voltage of 5V and the ability to withstand 4A peak current shocks, ensuring the safety of the circuit under extreme conditions. Its low capacitance characteristic of 0.5pF makes signal transmission almost unaffected, making it an ideal guardian of high-end electronic devices and high-speed data interfaces, effectively improving system stability and reliability.]]></description>
</item>
<item>
	<title><![CDATA[HSTS234050UL30(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsts234050ul30-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:50:35</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode has 4 built-in channels and is designed specifically for multi line systems. A maximum working voltage of 5V, combined with a peak current processing capacity of 4A, to construct a rigorous electrostatic protection network. The ultra-low capacitance characteristic of 0.5pF ensures the complete and non-destructive passage of high-speed signals, making it the preferred component for anti-static interference in precision circuits and sensitive electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HESDM3031MXT5G(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdm3031mxt5g-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:50:23</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is optimized for 3.3V voltage applications, with a compact and efficient single channel structure. The 5A peak current processing and 12pF capacitor design ensure strong resistance to electrostatic shocks while maintaining unobstructed signal transmission, making it a reliable guardian for protecting electronic circuits from electrostatic damage. It is suitable for enhancing the safety of various electrostatic sensitive electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HSTS232120U901(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsts232120u901-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:50:11</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode features a dual channel design and operates at a voltage of up to 12V, effectively responding to 11A instantaneous current surges and providing rigorous electrostatic protection for circuit systems. Its low capacitance value of 90 picoseconds ensures efficient and pure signal transmission, making it a reliable guardian of precision circuits and high-speed data interfaces, ensuring comprehensive protection for every piece of information in its flow.]]></description>
</item>
<item>
	<title><![CDATA[HESD7361XV2T1G(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd7361xv2t1g-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:49:59</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed specifically for 5V voltage systems, with a streamlined and efficient single channel design. Capable of withstanding transient electrostatic shocks of 4A, protecting the circuit from damage. Its capacitance value is only 0.4pF, with minimal interference to high-speed data transmission, making it an ideal solution for protecting precision electronic devices such as mobile communication and high-definition video lines.]]></description>
</item>
<item>
	<title><![CDATA[HCDSOD323-T12LC(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcdsod323-t12lc-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:49:48</pubDate>
	<description><![CDATA[This bidirectional ESD protective diode is designed specifically for a single signal path, with a maximum continuous operating voltage of 12V and a peak instantaneous current withstand capacity of 12A, creating a strong electrostatic barrier for the circuit system. Only 1 picafar capacitor ensures complete signal transmission, fearless of high-speed data exchange challenges, and is a reliable partner in preventing electrostatic damage in precision electronic applications.]]></description>
</item>
<item>
	<title><![CDATA[HSZESD9B3.3ST5G(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hszesd9b3-3st5g-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:49:36</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is specially customized for single signal lines, with a VRWM of 3.3V, suitable for low voltage application environments. With a peak current processing capacity of 11A and IPP, it can effectively suppress bidirectional electrostatic discharge and protect the safety of circuit components. The compact 15pF capacitance CJ design reduces interference with high-frequency signals and ensures fast and accurate data transmission, making it an ideal choice for anti-static interference in modern high-performance electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HSTS521033B950(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsts521033b950-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:49:24</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed for single line configuration and can operate stably at a working voltage of 3.3V. Its capacitance value is 15pF, ensuring clear signal transmission. With a peak pulse current processing capacity of 9A, your circuit board is equipped with an electrostatic protection shield to effectively resist daily electrostatic impacts, making it the guardian of precision electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[HGSOT08C-G3-08(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot08c-g3-08-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:49:12</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode has a dual channel configuration, withstand voltage of 8 volts, and can withstand a peak current of 15 amperes, providing solid electrostatic protection for the circuit. The capacitance value of 170 picoseconds ensures rapid and non-destructive signal transmission, making it an efficient component for protecting precision electronic equipment from electrostatic hazards.]]></description>
</item>
<item>
	<title><![CDATA[HDESD3V3XA1BCSF-7(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdesd3v3xa1bcsf-7-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:49:00</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel applications, ensuring robustness at a working voltage of 3.3V and effectively combating electrostatic shocks with an 8A peak current processing capability. Ultra low 0.6pF capacitance value, maximizing signal transmission speed and clarity, especially suitable for electrostatic protection in high-frequency applications, providing protection for high-performance operation of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HSTS321360U351(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsts321360u351-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:48:49</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is specially designed for single channel circuits, ensuring strong protection at a working voltage of 36V. It has a peak current processing capacity of 6A and can handle electrostatic shocks with ease. Although the capacitance value is 30pF, it is suitable for signal rate compatible applications, effectively isolating static interference, adding a stable static protection layer to various electronic devices, and ensuring stable system operation.]]></description>
</item>
<item>
	<title><![CDATA[HSZESD9101P2T5G(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hszesd9101p2t5g-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:48:37</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is specially designed for a single signal line. It is stable and reliable under a maximum working voltage of 5V, and has strong 4A peak current processing ability, which can effectively block electrostatic shocks. Its tiny 0.5pF capacitance ensures complete and high-speed signal transmission, making it a preferred component for protecting various precision electronic devices such as mobile communication and data interfaces from static interference, ensuring the safe operation of the product.]]></description>
</item>
<item>
	<title><![CDATA[HCPDQR5V0USP-HF(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcpdqr5v0usp-hf-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:48:25</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is unidirectional and designed for single signal line configuration. It can operate stably at 5 volts and carry a peak current of 4 amperes, providing strong electrostatic impact protection for the circuit. It has an ultra-low 0.5 picosecond capacitance value, ensuring high-speed data transmission without delay, and is a powerful assistant to protect various small electronic devices and high-frequency transmission interfaces from electrostatic damage, improving system reliability.]]></description>
</item>
<item>
	<title><![CDATA[HPJEC5V0M1FN2(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjec5v0m1fn2-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:48:13</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is specially designed for single signal lines. It is stable and reliable at a working voltage of 5V and can withstand 5.5A instantaneous impulse current, providing protection for the circuit. The small capacitance characteristic of 10pF ensures complete transmission of high-speed signals, making it an efficient component for protecting portable electronic and communication devices from electrostatic interference, enhancing system stability and durability.]]></description>
</item>
<item>
	<title><![CDATA[HRCLAMP3371ZCTFT(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrclamp3371zctft-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:48:01</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel circuits, with a working voltage of 3.3V and a peak current protection of 4A, constructing a strong electrostatic barrier for sensitive electronic components. Its ultra-low capacitance value of 0.55pF ensures lossless transmission of high-speed signals, making it an ideal electrostatic protection solution for precision circuits and high-speed data interfaces, enhancing overall system stability and reliability.]]></description>
</item>
<item>
	<title><![CDATA[HAZ5A23-01F(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz5a23-01f-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:47:49</pubDate>
	<description><![CDATA[Let me introduce you to this high-performance bidirectional ESD protection diode, designed specifically for a 3.3V voltage platform, which integrates single channel efficient protection. It has a 5A peak current processing capability and a 12pF capacitance characteristic, ensuring the clarity of signal transmission while protecting the circuit from electrostatic interference. It is an ideal choice for precision electronic equipment and board level protection, enhancing the overall stability of the system and its ability to resist static electricity.]]></description>
</item>
<item>
	<title><![CDATA[HPJSD03TS-AU(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjsd03ts-au-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:47:38</pubDate>
	<description><![CDATA[This unidirectional ESD protective diode is optimized for a 3.3V voltage platform and focuses on single channel electrostatic protection. Equipped with a high transient current withstand capacity of 11.2A, wear electrostatic protective clothing on the circuit board. Although the capacitance value is 60pF, it is still suitable for non high-speed signal lines, ensuring that it effectively blocks static electricity infringement and maintains signal transmission quality in various electronic applications.]]></description>
</item>
<item>
	<title><![CDATA[HVESD05C1-02VHG3-08(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hvesd05c1-02vhg3-08-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:47:26</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed for a single signal line configuration, with a maximum working voltage of 5V, capable of withstanding 9.4A instantaneous current shocks, and has an 80pF capacitance value. It is suitable for devices that are not very sensitive to signal delay, effectively preventing static hazards and providing stable protection measures for electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HVBUS03N1-DD1HG3-08(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hvbus03n1-dd1hg3-08-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:47:14</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is optimized for 3.3V voltage systems, with a single channel design that is widely compatible. 4A peak current absorption, achieving efficient electrostatic protection. 0.3pF ultra-low capacitance ensures zero delay in signal transmission, making it an expert in electrostatic defense for high sensitivity circuits and high-speed data lines.]]></description>
</item>
<item>
	<title><![CDATA[HSESDONCAN1LT3G(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsesdoncan1lt3g-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:47:02</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for dual circuits, with 24V withstand voltage (VRWM) and 4A peak current processing capability (IPP). While ensuring circuit safety, it is equipped with a low capacitance value of only 10pF, ensuring that high-speed signals pass through without damage. It provides efficient and tight electrostatic impact protection for precision electronic applications, protecting your equipment from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HGG0402052R542P(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgg0402052r542p-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:46:51</pubDate>
	<description><![CDATA[This ESD protection diode has a bidirectional single channel structure, with a withstand voltage of 5V and a peak current processing capacity of 4A, making it an effective barrier for electrostatic protection on circuit boards. Its compact 0.5pF capacitance ensures high-speed and non-destructive signal transmission, making it very suitable for protecting electronic products that are sensitive to static electricity and require high data transmission rates, adding a solid layer of protection to precision circuits.]]></description>
</item>
<item>
	<title><![CDATA[HSZESD5Z3.3T1G(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hszesd5z3-3t1g-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:46:39</pubDate>
	<description><![CDATA[This unidirectional ESD protective diode is designed specifically for a 3.3V voltage platform, with a sophisticated single channel structure that can withstand transient electrostatic impacts of 11.2A, ensuring the reliable operation of the circuit. Its capacitance value as low as 130 picoseconds has minimal impact on high-speed signal transmission, making it an efficient solution to protect modern sensitive electronic devices from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HSZESD9B5.0ST5G(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hszesd9b5-0st5g-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:46:27</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel use, with a 5V voltage protection level (VRWM) to ensure the safety of low-voltage circuits. 9A peak current withstand capacity (IPP), effectively intercepting bidirectional electrostatic impacts, and reinforcing circuit protection nets. A 15pF low capacitance value (CJ) reduces signal loss and optimizes the transmission quality of high-speed data lines, making it the preferred solution for protecting precision electronic equipment and maintaining stable system operation.]]></description>
</item>
<item>
	<title><![CDATA[HCPDQR5V0HE-HF(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcpdqr5v0he-hf-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:46:15</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially customized for single channel circuits, with a working voltage of VRWM of 5V, which can effectively resist conventional electrostatic threats. 9A peak pulse current IPP provides strong transient current resistance and protects the circuit from electrostatic damage. The 15pF low capacitance CJ design reduces signal interference and ensures the integrity of high-speed data transmission, making it the preferred choice for electrostatic protection in high-end electronic devices and precision circuit applications.]]></description>
</item>
<item>
	<title><![CDATA[HSD05T3G(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsd05t3g-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:46:03</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is a single channel directional type that can operate stably at 5V voltage. It has a 28A peak current processing ability and can quickly respond and suppress electrostatic discharge, protecting circuit safety. Its low capacitance characteristic of 200 picoseconds ensures high speed and clarity of signal transmission, making it an ideal choice for electrostatic protection in precision circuits and high-frequency applications.]]></description>
</item>
<item>
	<title><![CDATA[HSTS232050UL40(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsts232050ul40-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:45:52</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is specially designed with dual channels and is optimized for a 5V voltage level. It can withstand 4A instantaneous current shocks and has an ultra-low capacitance of 0.5pF, ensuring non-destructive high-speed signal passage. It provides precision level electrostatic protection for various sensitive electronic devices, enhancing system signal integrity and equipment reliability.]]></description>
</item>
<item>
	<title><![CDATA[HCPDV15V0-HF(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcpdv15v0-hf-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:45:40</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel applications, with a withstand voltage of 15V and a 10A peak current processing capability, providing reliable electrostatic protection for circuits. The low capacitance characteristic of 1pF ensures lossless transmission of high-speed signals, making it the preferred electrostatic protection solution for precision circuits and highly sensitive electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HUCLAMP3331ZATFT(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/huclamp3331zatft-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:45:28</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially customized for 3.3V systems, with a single channel design for easy integration. It can withstand instantaneous current surges of up to 5A, with a capacitance value of 12pF, and is suitable for electrostatic protection needs of low-speed signal lines. This device can effectively intercept electrostatic discharge, protect the safety of circuit components, and is the preferred solution to improve the immunity and reliability of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HGG0402055R042P(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgg0402055r042p-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:45:16</pubDate>
	<description><![CDATA[This bidirectional ESD protective diode is specially designed for single circuits, with a withstand voltage of 5V and the ability to withstand 2.5A instantaneous current shocks, providing a hidden anti-static armor for circuit boards. The low capacitance design of 2.5pF ensures smooth and unobstructed high-speed data, making it an exquisite work to protect high-end electronic devices from static electricity.]]></description>
</item>
<item>
	<title><![CDATA[HDF2B6M5CT,L3F(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdf2b6m5ct-l3f-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:45:04</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed for single channel configuration and operates stably at a maximum working voltage of 5V. It can withstand up to 4A of instantaneous electrostatic surge current, ensuring circuit safety. Its capacitance value as low as 0.5pF ensures smooth and unobstructed high-speed signal transmission, making it an exquisite choice for protecting sensitive circuit components and improving the anti-static performance of the system.]]></description>
</item>
<item>
	<title><![CDATA[HCPDH3V3UB-HF(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcpdh3v3ub-hf-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:44:53</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is specially designed for 3.3V systems, with a single channel design focused on protecting critical circuits. 11.2A peak pulse current processing capability, strong resistance to electrostatic interference. Despite having a capacitance value of 60pF, it is still suitable for signal circuits with less stringent requirements, ensuring smooth transmission of system signals while preventing electrostatic damage, and safeguarding the stable operation of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HGSOT12C-HE3-18(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot12c-he3-18-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:44:41</pubDate>
	<description><![CDATA[This product is a high-performance unidirectional ESD electrostatic protection diode, designed for 12V voltage systems with a dual channel structure. Capable of withstanding transient current surges of up to 11A, providing solid protection for the circuit. The small capacitance value of 90pF ensures complete transmission of high-speed signals, making it particularly suitable for protecting data circuits in precision electronic devices, effectively blocking electrostatic interference, and ensuring stable operation of the equipment.]]></description>
</item>
<item>
	<title><![CDATA[HSTS521050B331(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsts521050b331-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:44:29</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is a single channel bidirectional type that can operate stably at 5V voltage, providing up to 20A instantaneous current protection capability. It is equipped with a 33pF low leakage capacitor to ensure no significant attenuation of high-speed signals. It is an efficient component for protecting electronic circuits from electrostatic interference and improving the overall robustness of the system.]]></description>
</item>
<item>
	<title><![CDATA[HPJSD24TS-AU(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjsd24ts-au-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:44:17</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed specifically for a single signal path, with a withstand voltage of 24V and the ability to withstand 6A transient high current shocks. It has a capacitance value as low as 25pF, ensuring lossless transmission of high-speed signals and providing precise and strong electrostatic protection for sensitive electronic devices, enhancing the overall system immunity.]]></description>
</item>
<item>
	<title><![CDATA[HGSOT12C-E3-18(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot12c-e3-18-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:44:05</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is specially designed with dual channels and optimized for a 12V voltage platform. It can withstand 11A peak current shocks and provide electrostatic protection for circuit boards. The low capacitance characteristic of 90 picosecond ensures high-speed and pure signal transmission, making it an ideal guardian of precision circuits and high-speed data lines, ensuring safe and smooth information exchange at every step.]]></description>
</item>
<item>
	<title><![CDATA[HESDALC5-1BT2Y(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdalc5-1bt2y-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:43:54</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel applications and can operate stably at 5V voltage. It has the ability to withstand 20A peak transient current and provides comprehensive electrostatic protection for circuits. Its capacitance value as low as 40pF ensures that high-speed signal transmission is not affected, making it an ideal choice for protecting sensitive components in electronic devices, improving system stability, and improving data transmission quality.]]></description>
</item>
<item>
	<title><![CDATA[HSPHV12-01ETG-C(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsphv12-01etg-c-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:43:42</pubDate>
	<description><![CDATA[This single channel directional ESD protection diode has a voltage breakdown threshold of 12V and can withstand a peak electrostatic discharge current of 4A, ensuring stable operation of the circuit in high electrostatic environments. Its compact 28 picosecond capacitance design optimizes signal integrity, especially suitable for electrostatic protection of high-speed data lines, effectively improving system reliability without sacrificing transmission performance.]]></description>
</item>
<item>
	<title><![CDATA[HDF2B5M5CT,L3F(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdf2b5m5ct-l3f-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:43:30</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is a bidirectional type, suitable for 3.3V voltage circuits, with a sophisticated single channel design. 4A peak current processing capability provides comprehensive electrostatic protection for circuit boards. 0.3pF low capacitance value ensures clear and non-destructive signal transmission, making it an ideal component for protecting precision electronic equipment and maintaining signal integrity.]]></description>
</item>
<item>
	<title><![CDATA[HPESD24VS1UA,115(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd24vs1ua-115-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:43:18</pubDate>
	<description><![CDATA[We introduce this unidirectional ESD electrostatic protection diode, which focuses on single signal line protection. It has a withstand voltage level of 24V and can withstand 6A peak instantaneous current, providing a strong electrostatic barrier for high-voltage circuits. The 25pF capacitance design is suitable for application scenarios with relatively loose signal rate requirements, ensuring smooth signal transmission while protecting the circuit. It is the preferred component to enhance the anti-static ability of equipment.]]></description>
</item>
<item>
	<title><![CDATA[HSTS232150U451(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsts232150u451-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:43:07</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode adopts unidirectional technology, is configured with dual channels, operates at a voltage of 15V, and can withstand 10A instantaneous current shocks, providing stable and reliable electrostatic protection for circuit systems. Its low capacitance value of 60pF ensures lossless signal transmission, making it particularly suitable for high-frequency signal lines and precision electronic equipment, effectively improving the overall system immunity.]]></description>
</item>
<item>
	<title><![CDATA[HD24V0L1B2LPSQ-7B(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hd24v0l1b2lpsq-7b-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:42:55</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel use, with a withstand voltage of 24V and the ability to withstand 3A instantaneous current shocks, providing precise electrostatic protection for sensitive circuits. Its small capacitance value of 8 picoseconds ensures high-speed and pure signal transmission, making it an ideal companion for portable electronic devices and high-frequency communication applications.]]></description>
</item>
<item>
	<title><![CDATA[HPJSD05LCFN2(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjsd05lcfn2-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:42:43</pubDate>
	<description><![CDATA[The carefully designed bidirectional ESD protection diode provides comprehensive protection for a single signal line. The 5V withstand voltage capability combined with 5.5A peak current processing performance ensures the safety and reliability of the circuit in the face of electrostatic discharge. The low capacitance value of only 10 picoseconds ensures smooth and unobstructed high-speed signals, making it the preferred solution to protect various precision electronic and communication equipment from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HDESD1FLEX2SOQ-7(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdesd1flex2soq-7-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:42:31</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed to be bidirectional and equipped with dual channels, capable of withstanding up to 24V continuous operating voltage (VRWM). In the event of transient high voltage events, it can effectively discharge peak current (IPP) of up to 4A, ensuring circuit safety. Its low capacitance value of 10pF helps reduce signal attenuation and is suitable for high-frequency transmission lines with strict requirements for signal integrity, providing a robust electrostatic protection solution for your electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HACPDUC5V0USP-HF(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hacpduc5v0usp-hf-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:42:20</pubDate>
	<description><![CDATA[This single channel directional ESD protection diode has a rated voltage of 5V and can withstand 4A electrostatic discharge current, providing precise protection for sensitive electronic circuits. Its ultra-low capacitance value of 0.4pF ensures smooth and unobstructed high-speed signals, making it an ideal choice for protecting applications such as mobile devices and communication interfaces that have strict requirements for signal quality.]]></description>
</item>
<item>
	<title><![CDATA[HESD5Z7.0T5G(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5z7-0t5g-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:42:08</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is specially designed for 7V voltage circuits and provides single channel professional protection. 7A peak current absorption capacity ensures efficient electrostatic discharge. Although the capacitance value is 60pF, it can still maintain good signal transparency for non high-speed signal lines, adding a sturdy electrostatic firewall to electronic devices, and improving system reliability.]]></description>
</item>
<item>
	<title><![CDATA[HCESD1006NC3V3B(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd1006nc3v3b-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:41:56</pubDate>
	<description><![CDATA[This is a bidirectional single channel ESD protection diode with a rated voltage VRWM of 3.3V, capable of withstanding 9A peak transient current IPP, and has a capacitance value of 15pF CJ. It is suitable for protecting circuits sensitive to static electricity, ensuring clear signal transmission while providing effective protection.]]></description>
</item>
<item>
	<title><![CDATA[HGSOT15C-HE3-08(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot15c-he3-08-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:41:44</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode adopts a unidirectional design and is equipped with dual channels. The working voltage VRWM is 15V and can withstand transient current surges of up to 10A, providing solid protection for the circuit. Its low capacitance characteristic of 60pF ensures high-speed and clear signal transmission, making it very suitable for precision electronic devices that require efficient electrostatic protection and signal integrity.]]></description>
</item>
<item>
	<title><![CDATA[HGSOT08C-E3-18(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot08c-e3-18-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:41:32</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode adopts unidirectional technology, dual channel structure, working voltage of 8V, and can withstand 15A peak current impact, providing electrostatic protection armor for the circuit board. The 170pF low capacitance design reduces signal interference and is an exquisite choice for protecting highly sensitive electronic devices, ensuring clear and unobstructed data transmission.]]></description>
</item>
<item>
	<title><![CDATA[HCPDUC5V0USP-HF(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcpduc5v0usp-hf-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:41:21</pubDate>
	<description><![CDATA[A single channel ESD electrostatic protection diode designed specifically for 5V circuits, which can effectively withstand 4A transient current and build a defense line for circuit safety. Its ultra-low capacitance of 0.4pF ensures signal integrity, making it particularly suitable for high-speed signal transmission and providing a hidden and powerful electrostatic protective cover for electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HSTS232360U261(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsts232360u261-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:41:09</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed with dual channels, rated voltage of 36V, and can withstand 5A instantaneous pulse current, providing reliable electrostatic protection for circuits. Its small capacitance value of 35pF ensures signal integrity and high-speed transmission performance, making it an ideal choice for protecting precision electronic equipment and improving system reliability.]]></description>
</item>
<item>
	<title><![CDATA[HAZ9525-01H(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz9525-01h-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:40:57</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially designed for single channel circuits, with a maximum working voltage of 5V, a peak current absorption capacity of 8A, and a small capacitance design of 10pF, ensuring that the circuit is protected from electrostatic damage while maintaining high-speed and pure signal transmission. It adds an invisible electrostatic protection net to the internal systems of various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HCESD1006NC12VB(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd1006nc12vb-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:40:45</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially designed for single channel circuits, with a withstand voltage of 12V and a peak current carrying capacity of 5A, building a solid electrostatic defense line for electronic systems. Despite having a capacitance value of 10pF, it can effectively balance protection requirements and signal transmission efficiency in appropriate application scenarios, making it a selected component for enhancing equipment‘s electrostatic resistance and maintaining circuit safety.]]></description>
</item>
<item>
	<title><![CDATA[HCESD1006NC24VB(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd1006nc24vb-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:40:33</pubDate>
	<description><![CDATA[This high-performance bidirectional ESD electrostatic protection diode is customized for a single line, stable and reliable under 24V working voltage, and has a 5A peak current processing ability to effectively block electrostatic shocks, ensuring circuit safety. The 10pF low capacitance design is perfectly compatible with high-speed signal paths, preventing static interference while maintaining smooth data transmission. It is the preferred component for electrostatic protection in high-end electronic devices and communication systems.]]></description>
</item>
<item>
	<title><![CDATA[HDF2S6M5CT,L3F(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdf2s6m5ct-l3f-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:40:21</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode has a working voltage VRWM of 5V and can withstand transient current surges up to 4A, providing robust electrostatic protection for the circuit. Its capacitance value is only 0.6pF, with extremely low signal attenuation, making it very suitable for protecting high-frequency data lines and ensuring signal integrity. It is the preferred device for anti-static interference in precision electronic and communication equipment.]]></description>
</item>
<item>
	<title><![CDATA[HGSOT15C-E3-18(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot15c-e3-18-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:40:10</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode adopts an advanced unidirectional design, with dual channels providing comprehensive protection for the circuit. It can operate stably at a working voltage of 15V, withstand 10A instantaneous current shocks, and ensure circuit safety. In addition, the low capacitance value of 60 picosecond effectively reduces signal attenuation, making it particularly suitable for high-speed data transmission applications and providing efficient and robust electrostatic protection for sensitive electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HGSOT08C-HG3-18(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot08c-hg3-18-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:39:58</pubDate>
	<description><![CDATA[This unidirectional dual channel ESD electrostatic protection diode is designed for high sensitivity circuits, with a voltage resistance of 8V and the ability to withstand 15A instantaneous current shocks, providing an indestructible electrostatic protection wall for equipment. The 170pF low capacitance characteristic ensures signal integrity without delay and is the preferred component for protecting electronic systems from electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HGSOT08C-HE3-18(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot08c-he3-18-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:39:46</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode features a dual channel design to enhance protection, with a withstand voltage of 8V and a peak current processing capacity of 15A, effectively resisting electrostatic shocks. The 170pF capacitance value is finely balanced, ensuring lossless and high-speed signal transmission, providing stable and reliable electrostatic protection solutions for various precision electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HGSOT08C-HE3-08(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot08c-he3-08-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:39:34</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is equipped with dual channels, withstand voltage of 8V, and has a peak current absorption capacity of 15A, providing a strong defense line for circuit safety. The capacitance value as low as 170pF ensures high-speed and pure signal transmission, making it a powerful assistant for precision circuit anti-static interference and ensuring stable operation of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HSTS232050U152(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsts232050u152-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:39:22</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is equipped with a dual channel configuration and is specifically designed for electronic circuits. 5V working voltage, 17A peak pulse current absorption capacity, effectively resisting electrostatic impact. With a low capacitance value of 180pF, it ensures complete and non-destructive high-speed signals, making it an ideal choice for protecting sensitive electronic components and improving system stability.]]></description>
</item>
<item>
	<title><![CDATA[HESDA051-1JY(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesda051-1jy-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:39:10</pubDate>
	<description><![CDATA[This unidirectional ESD protective diode is optimized for single line applications, with a withstand voltage of 5V, and can effectively absorb static discharge energy. 28A peak current processing capability, strengthened circuit protection level, ensuring system stability. The 200pF low capacitance design reduces signal attenuation and ensures high-speed signal transmission without delay, making it a carefully selected component for protecting sensitive electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HESD24VS2UE6327HTSA1(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd24vs2ue6327htsa1-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:38:59</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is equipped with a dual channel structure, optimized for 24V voltage systems, capable of withstanding 2A peak transient currents, and a 25pF capacitor to ensure minimal signal interference. It is an ideal component for precision circuit anti-static protection, wearing invisible protective clothing for sensitive electronic devices to ensure safe and smooth data transmission.]]></description>
</item>
<item>
	<title><![CDATA[HCESD1006UC5VBSH(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd1006uc5vbsh-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:38:47</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially designed for single channel, with a withstand voltage of 5V and a peak current withstand capacity of 4A, ensuring the continuous and safe operation of the circuit under electrostatic impact. The low capacitance value of 0.5pF ensures complete signal transmission, especially suitable for electronic devices that are sensitive to static electricity and require high-speed data transmission, providing protection for your precision circuits.]]></description>
</item>
<item>
	<title><![CDATA[HSTN061050BL40(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hstn061050bl40-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:38:35</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is a bidirectional single channel type, with a working voltage of VRWM of 5V, capable of withstanding 4A peak current shocks, providing strict electrostatic protection for the circuit. Its capacitance value as low as 0.55pF ensures signal integrity and is particularly suitable for protecting high-frequency data lines and precision electronic equipment, improving the overall anti-interference and reliability of the system.]]></description>
</item>
<item>
	<title><![CDATA[HSELC05CI(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hselc05ci-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:38:23</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is a single channel bidirectional configuration with a withstand voltage of 5V (VRWM) and can withstand 4A peak transient current (IPP). It also has a 1pF low capacitance characteristic (CJ), ensuring clear and non-destructive high-speed signal paths, providing balanced electrostatic discharge protection for sensitive components in electronic devices, and improving system stability and reliability.]]></description>
</item>
<item>
	<title><![CDATA[HESD0512LB(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd0512lb-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:38:11</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed as a bidirectional single channel, with a working voltage of VRWM up to 5 volts, and can effectively withstand instantaneous current surges of 20 amperes, providing excellent electrostatic protection for circuit systems. Its compact 40 picosecond capacitance ensures smooth and unobstructed signal transmission, making it particularly suitable for protecting electronic devices that are sensitive to static electricity and require high-speed data exchange, enhancing the stability and safety of system operation.]]></description>
</item>
<item>
	<title><![CDATA[HDF2B18FU,H3XHF(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdf2b18fu-h3xhf-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:38:00</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is optimized for single signal protection, with a withstand voltage of up to 12V and the ability to withstand 9A instantaneous current shocks, providing solid protection for circuit safety. The low capacitance characteristic of 8pF ensures that signal transmission is almost unaffected, making it an ideal component for high reliability electronic equipment anti-static, allowing your design to operate stably in various environments.]]></description>
</item>
<item>
	<title><![CDATA[HGSOT15C-HE3-18(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot15c-he3-18-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:37:48</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode adopts unidirectional technology and is configured with dual channels, which can operate stably at 15V voltage and withstand 10A instantaneous current impact, providing solid protection for sensitive components in the circuit. Its capacitance value as low as 60pF ensures high-speed transmission and clarity of signals, making it an efficient solution to protect precision electronic devices from electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HMMBZ15CA(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hmmbz15ca-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:37:36</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed with dual channels and is specifically designed for 12V voltage systems. It can withstand transient currents of up to 22A, providing indestructible electrostatic protection for circuits. The capacitance value of 80 picoseconds ensures no delay transmission of high-speed signals, making it the guardian angel of precision electronic devices and high-speed data lines, ensuring safe and smooth data exchange every time.]]></description>
</item>
<item>
	<title><![CDATA[HPJSD05TS-02-AU(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjsd05ts-02-au-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:37:24</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is designed specifically for single line operation, with a stable operating voltage of 5V, capable of withstanding transient current surges of 9.4A. The capacitance of 80pF is suitable for circuits with low signal frequencies, effectively intercepting electrostatic discharge and adding a strong protective layer to electronic devices, ensuring their safety and stability in complex electromagnetic environments.]]></description>
</item>
<item>
	<title><![CDATA[HAOZ8231ADI-12(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haoz8231adi-12-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:37:13</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single channel circuits, with a working voltage of 12V and a peak current processing capacity of 5A, providing a powerful electrostatic protection shield for electronic devices. Although the capacitance value of 10pF is slightly higher, it is still suitable for circuits with low sensitivity to capacitance, ensuring the safety of core components in high electrostatic environments, and is a key component for improving the system‘s protection level.]]></description>
</item>
<item>
	<title><![CDATA[HCDSOD323-T24LC(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcdsod323-t24lc-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:37:01</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially designed for a single signal path, with a withstand voltage of 24V and an instantaneous carrying current of 6A, building an anti-static barrier for sensitive circuits. Its capacitance value as low as 1.3pF ensures non-destructive passage of high-speed signals, making it the preferred electrostatic protection for high-end electronic devices and fast-paced data lines, adding insurance to the stable operation of the system.]]></description>
</item>
<item>
	<title><![CDATA[HGSOT08C-HG3-08(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot08c-hg3-08-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:36:49</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed with dual channels and operates at a voltage of 8V. It can effectively withstand transient current surges of 15A, providing rigorous electrostatic protection for the circuit. A capacitance value of 170 picoseconds ensures uninterrupted signal transmission, making it an ideal companion for anti-static in precision circuits and sensitive electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HGSOT08C-G3-18(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot08c-g3-18-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:36:37</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is specially designed with dual channels and can operate stably at 8V voltage. It has a 15A pulse current withstand capacity, providing a stable electrostatic protection net for the circuit. In addition, with a low capacitance value of 170pF, it ensures clear and non-destructive signal transmission, making it a carefully selected component for ensuring electronic equipment safety and improving system performance.]]></description>
</item>
<item>
	<title><![CDATA[HVESD12C1-HD1HG3-08(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hvesd12c1-hd1hg3-08-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:36:25</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is specially designed for single circuit protection, with a maximum operating voltage of 12V and the ability to withstand 4A instantaneous electrostatic discharge current shocks, ensuring the safety of components on the circuit board. Its capacitance value is as low as 28pF, which perfectly meets the requirements of high-speed signal transmission, reduces signal attenuation and delay, and is an ideal choice for protecting electronic devices from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HVESD12A1C-HD1-GS08(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hvesd12a1c-hd1-gs08-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:36:14</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is designed with a single channel unidirectional design, with a rated voltage of 12V VRWM, and can effectively cope with up to 4A instantaneous electrostatic impact (IPP), ensuring circuit safety. Its low capacitance value of 28pF (CJ) ensures non-destructive passage of high-speed signals, making it particularly suitable for protecting sensitive electronic devices from electrostatic damage while maintaining signal transmission quality.]]></description>
</item>
<item>
	<title><![CDATA[HSP3021-01ETG(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsp3021-01etg-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:36:02</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is suitable for single signal lines, with a withstand voltage of 5V and the ability to withstand 4A peak current shocks, providing solid protection for the circuit. Its ultra-low capacitance of 0.5pF ensures the non-destructive passage of high-speed signals, making it a selected component for protecting highly sensitive electronic devices, suitable for various precision applications that require strong electrostatic protection technology.]]></description>
</item>
<item>
	<title><![CDATA[HGSOT15C-G3-18(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot15c-g3-18-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:35:50</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode adopts a unidirectional design and has a dual channel configuration, which can operate stably at 15V voltage and effectively withstand 10A instantaneous current impact, providing excellent electrostatic protection performance for electronic devices. Its 60pF small capacitance ensures efficient and pure signal transmission, making it particularly suitable for electronic applications that require high-speed data exchange and high sensitivity.]]></description>
</item>
<item>
	<title><![CDATA[HESDALD05UE2X(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdald05ue2x-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:35:38</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode features a dual channel design, specifically designed for 5V voltage systems, capable of withstanding 4A peak currents with a capacitance as low as 0.5pF, minimizing signal attenuation. It is an efficient component for protecting precision circuit components from electrostatic interference, ensuring clear and error free data transmission, and improving overall system performance.]]></description>
</item>
<item>
	<title><![CDATA[HPESDMC9D5VU(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdmc9d5vu-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:35:26</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is optimized for single channel applications and can operate stably at a working voltage of 5V. It has the ability to handle peak transient currents of 4A, providing hidden anti-static armor for sensitive components on circuit boards. Its capacitance value is as low as 0.5pF, ensuring smooth high-speed signal transmission. It is a carefully selected component for modern high-performance electronic devices to prevent electrostatic interference and safeguard product performance.]]></description>
</item>
<item>
	<title><![CDATA[HESD5V0D9B-TP(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5v0d9b-tp-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:35:15</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is designed in a bidirectional manner, specifically designed for a single signal path. The working voltage VRWM of 5V is suitable for low-voltage circuit protection requirements, and the IPP processing efficiency of 9A peak pulse current ensures the safety and stability of the circuit under electrostatic impact. In addition, the low capacitance value CJ of 15pF reduces signal attenuation, making it an ideal anti-static solution for high-speed data transmission and sensitive electronic devices, providing a solid guarantee for the safe operation of the equipment.]]></description>
</item>
<item>
	<title><![CDATA[HSELC12CI(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hselc12ci-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:35:03</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single line applications, with a withstand voltage of 12V and a peak current processing of 12A, providing a robust electrostatic protection barrier for circuits. Its compact 1pF capacitance ensures smooth and non-destructive high-speed signals, making it an efficient solution to protect modern precision electronic devices from electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HGG060305100N2P(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgg060305100n2p-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:34:51</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode adopts a bidirectional design, specifically designed for single channel applications, and can withstand continuous working voltage of up to 5V. Its instantaneous peak current processing capacity reaches 9A, ensuring excellent protection effects. Its low capacitance value of 15pF contributes to high-speed signal integrity and is very suitable for protecting sensitive electronic circuits from electrostatic discharge noise, thereby improving system reliability.]]></description>
</item>
<item>
	<title><![CDATA[HPESDNC2FD3V3BA(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdnc2fd3v3ba-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:34:39</pubDate>
	<description><![CDATA[This product is a single channel bidirectional ESD electrostatic protection diode with a working voltage VRWM of 3.3V. It can withstand a 9A instantaneous electrostatic discharge current IPP and a capacitance value of CJ as low as 15pF, which helps to reduce signal interference. It is suitable for precision electronic circuits that require electrostatic protection.]]></description>
</item>
<item>
	<title><![CDATA[HCFTVS5V0LC TR PBFREE(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcftvs5v0lc-tr-pbfree-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:34:28</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode focuses on a single signal path, providing stable service at 5V voltage, and can withstand 4A instantaneous current shocks, building an electrostatic protection wall for the circuit. Its capacitance value is as low as 0.6pF, ensuring smooth and unobstructed high-speed data signals. It is a powerful assistant for precision circuit protection, strengthening the system‘s electrostatic resistance, and safeguarding the safety of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HPJSD07TS-AU(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjsd07ts-au-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:34:16</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is specially designed for single signal protection on a 7V voltage platform, capable of withstanding 7A instantaneous high current shocks and effectively resisting electrostatic invasion. Although the capacitance value of 60pF is slightly higher, it can still ensure signal quality and electrostatic protection in non high-speed signal transmission scenarios, adding a stable electrostatic protection net to electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HPE4220CS_R1_00001(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpe4220cs_r1_00001-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:34:04</pubDate>
	<description><![CDATA[This single channel directional ESD protection diode operates at a DC voltage of 5V and is designed specifically for precision circuits. With a peak current withstand capacity of 28A, it can effectively resist electrostatic impact and protect circuit components. Its small capacitance characteristic of 200 picoseconds ensures high speed and integrity of signal transmission, making it a powerful assistant for anti-static interference in precision electronic applications.]]></description>
</item>
<item>
	<title><![CDATA[HGSOT12C-G3-08(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot12c-g3-08-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:33:52</pubDate>
	<description><![CDATA[We present you with this exquisitely crafted unidirectional ESD electrostatic protection diode, with a dual channel design that cleverly meets the protection needs of multiple circuits. Excellent performance at 12V working voltage, able to withstand 11A instantaneous current surge, building a strong defense line for circuit safety. In addition, the ultra-low capacitance value of only 90 picoseconds ensures that high-speed signal transmission is not disturbed, making it an ideal companion for protecting sensitive electronic devices and maintaining data integrity.]]></description>
</item>
<item>
	<title><![CDATA[HSRL05(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsrl05-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:33:40</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode features a dual channel design, with a VRWM operating voltage of 5V, capable of withstanding peak pulse currents of up to 6A, providing strong electrostatic protection capabilities. A capacitance value of 1pF is suitable for applications that require high bandwidth while ensuring signal transmission quality. It adds dual protection to your circuit system and effectively resists static electricity threats.]]></description>
</item>
<item>
	<title><![CDATA[HSTS232120U581(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsts232120u581-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:33:28</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is specially designed with a dual channel structure, optimized for 12V voltage systems, capable of withstanding 22A high current transient shocks, providing ultra strong electrostatic protection for circuit boards. The capacitance value of 80 picosecond is exquisitely balanced, ensuring the non-destructive passage of high-speed signals. It is an ideal component for protecting highly sensitive circuits and improving data transmission reliability, adding strong guarantees to the stable performance of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HSTN101050BL25(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hstn101050bl25-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:33:17</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is customized for single signal lines, with a withstand voltage of 5V and can withstand the impact of 4A instantaneous static discharge current, ensuring that the circuit is not damaged by static electricity. The small capacitance characteristic of 0.5pF optimizes the passability of high-frequency signals, lossless data transmission speed and quality, making it the preferred solution for preventing electrostatic interference in precision circuits and portable devices.]]></description>
</item>
<item>
	<title><![CDATA[HDESD3V3X1BCSF-7(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdesd3v3x1bcsf-7-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:33:05</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specifically designed for single channel circuit protection, ensuring safety and stability at a working voltage of 3.3V. Its 4A peak current processing ability effectively blocks static threats. The ultra-low capacitance characteristic of 0.55pF ensures smooth and unobstructed high-speed signal transmission, making it an exquisite choice for protecting high-end electronic devices, ensuring data integrity, and efficient system operation.]]></description>
</item>
<item>
	<title><![CDATA[HAOZ8851ADI-05(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haoz8851adi-05-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:32:53</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed as a single channel, with a working voltage of 3.3V and a capacity to withstand 4A instantaneous current, providing comprehensive electrostatic protection for the circuit. Its capacitance value is only 0.55pF, greatly reducing the delay of signal transmission. It is the preferred component to ensure that high-speed data lines are free from electrostatic interference and maintain the high-performance operation of the system.]]></description>
</item>
<item>
	<title><![CDATA[HACPDQC5V0R-HF(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hacpdqc5v0r-hf-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:32:41</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single channel circuit protection, with a working voltage of VRWM of 5V, which can stably provide protection in low voltage environments. With a peak pulse current IPP processing capability of up to 9A, it strongly resists electrostatic discharge and ensures circuit safety. A small capacitance value of 15pF CJ reduces the impact on signal transmission, especially suitable for high-speed data lines, providing powerful and delicate electrostatic protection solutions for your electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HAZ9407-01H(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz9407-01h-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:32:29</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is specially designed for 7V voltage circuits, focusing on precise protection of a single channel. The 7A peak current processing capability provides a powerful electrostatic buffer for the circuit. The 60pF capacitance characteristic is suitable for lower frequency signal lines, ensuring effective resistance to static interference while maintaining clear signal transmission, providing a solid support for the stable operation of electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[HGSOT15C-HG3-18(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot15c-hg3-18-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:32:18</pubDate>
	<description><![CDATA[This product is a high-performance ESD electrostatic protection diode that adopts unidirectional technology and is equipped with two independent protection channels. Stable service at a working voltage of 15V, capable of withstanding instantaneous 10A current shocks, building a safety barrier for sensitive components on the circuit board. The exquisite design of 60 picosecond capacitance reduces signal loss and ensures smooth and unobstructed high-frequency signals, making it an ideal companion for electrostatic protection in high-end electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HGSOT15C-HG3-08(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot15c-hg3-08-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:32:06</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is equipped with a dual channel architecture and is specially customized for precision circuit protection. Stable operation at a working voltage of 15V, capable of withstanding 10A instantaneous pulse current, providing strong electrostatic protection for equipment. Its optimized 60pF low capacitance design ensures uninterrupted high-speed signal transmission and is an indispensable safety component in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HGSOT15C-G3-08(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot15c-g3-08-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:31:54</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode has unidirectional conductivity and is equipped with dual channels. It can operate stably at 15V voltage and withstand 10A instantaneous current shocks, providing a solid protective barrier for electronic circuits. Its compact 60pF capacitance ensures high speed and quality signal transmission, making it the preferred solution for protecting highly sensitive electronic devices from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HESD9101P2T5G(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd9101p2t5g-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:31:42</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed specifically for single signal circuits, with a VRWM of 5V and the ability to withstand 4A peak transient currents, providing a solid electrostatic protection barrier for the circuit. Its low capacitance characteristic of only 0.5pF ensures smooth and unobstructed high-speed signals, making it an efficient solution to protect various precision electronic devices from electrostatic damage, improving equipment stability and service life.]]></description>
</item>
<item>
	<title><![CDATA[HAOZ8811DI-05(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haoz8811di-05-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:31:30</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is designed specifically for single line operation, with stable operation at 5V voltage and 4A peak current absorption capacity, which can effectively block electrostatic shocks. Its low capacitance value of 0.6pF ensures high-speed and high-quality signal transmission, making it the preferred component for anti-static damage in precision circuits and sensitive electronic devices, enhancing the overall protection efficiency of the system.]]></description>
</item>
<item>
	<title><![CDATA[HAOZ8S502BDS-03(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haoz8s502bds-03-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:31:19</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel use, with a withstand voltage of 3.3V (VRWM), capable of withstanding 9A peak current impulse (IPP), and has a low capacitance characteristic of 15pF (CJ), ensuring efficient protection without affecting signal quality. It is a carefully selected component for protecting electronic devices from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HDESD5V0XA1BCSF-7(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdesd5v0xa1bcsf-7-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:31:07</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode adopts a bidirectional design, specifically designed for single channel configuration, with a maximum working voltage of 5V and a processing capacity of 4A peak pulse current, to provide hidden anti-static armor for the circuit board. In addition, the ultra-low capacitance characteristic of 0.55pF ensures rapid and unobstructed signal transmission, making it a powerful assistant for protecting highly sensitive electronic components and promoting smooth data communication.]]></description>
</item>
<item>
	<title><![CDATA[HDESD5V0U1BB-7(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdesd5v0u1bb-7-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:30:55</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed as a bidirectional single channel, with a working voltage withstand voltage of 5V and can withstand a peak instantaneous current of 2.5A. It has a capacitance value as low as 3pF, ensuring smooth and unobstructed high-speed signals, providing robust electrostatic protection for various electronic devices, and improving system reliability.]]></description>
</item>
<item>
	<title><![CDATA[HACPDQC5V0UESPC-HF(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hacpdqc5v0uespc-hf-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:30:43</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed specifically for a single channel, with a withstand voltage of 5V and a peak current processing capacity of 4A, which can strongly resist electrostatic discharge impacts. Its ultra-low capacitance value of 0.5pF ensures that high-speed signals pass without attenuation, making it the preferred solution for protecting sensitive circuit components in various electronic devices such as mobile devices and wireless communication, making equipment operation more stable and safe.]]></description>
</item>
<item>
	<title><![CDATA[HSTS321120B301(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsts321120b301-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:30:32</pubDate>
	<description><![CDATA[This bidirectional single channel ESD electrostatic protection diode has a voltage protection level of 12V and can withstand a peak pulse current of 11A, providing comprehensive electrostatic protection for sensitive circuits. Its small capacitance characteristic of 38pF ensures signal integrity and can be easily handled even in high-speed data transmission scenarios, making it the preferred solution to protect precision electronic equipment from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HPSD18C-LF-T7(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpsd18c-lf-t7-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:30:20</pubDate>
	<description><![CDATA[The carefully designed bidirectional ESD protection diode is optimized for single line applications, with a withstand voltage of 18V and an instantaneous current processing ability of IPP 9A, achieving bidirectional electrostatic transient protection. The 30 picosecond low capacitance design ensures high-speed signal lossless transmission and is an efficient solution to protect various precision electronic devices, such as mobile communication and data interfaces, from static electricity infringement, ensuring signal purity and system stability.]]></description>
</item>
<item>
	<title><![CDATA[HUCLAMP3311P.TCT(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/huclamp3311p-tct-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:30:08</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is specially designed for single signal lines and is stable and reliable at a working voltage of 3.3V. Its 7A peak current processing ability effectively resists electrostatic shocks. The compact 10pF capacitance ensures complete transmission of high-speed signals without fear of high-frequency interference, providing an efficient and low impact solution for the electrostatic protection needs of various electronic devices, ensuring safe and smooth operation of circuits.]]></description>
</item>
<item>
	<title><![CDATA[HDI5315-02F(DFN1006-3L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdi5315-02f-dfn1006-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:29:56</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode provides dual channel robust protection for your circuit. Under a working voltage of 5V, it can withstand 3A peak current surge to ensure circuit safety. Its compact 0.45pF capacitance design optimizes signal transmission speed, especially suitable for high-frequency data line protection, effectively isolating static interference and protecting equipment from transient voltage damage.]]></description>
</item>
<item>
	<title><![CDATA[HPJSRV05-4-AU(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjsrv05-4-au-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:29:45</pubDate>
	<description><![CDATA[This high-performance ESD electrostatic protection diode adopts unidirectional technology and is equipped with 4 independent protection channels. The working voltage VRWM is 5V and can withstand up to 4A instantaneous current shocks, ensuring stable operation of the circuit in electrostatic environments. Its capacitance value is only 0.5pF, greatly reducing interference with high-frequency signals, making it an ideal component for protecting precision electronic equipment from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HCESD1006UT5VBS(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd1006ut5vbs-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:29:33</pubDate>
	<description><![CDATA[This bidirectional ESD protective diode is designed specifically for single signal lines and can provide robust electrostatic protection at 5V voltage. With its 4A peak transient current withstand capacity, it can effectively neutralize electrostatic discharge events and ensure circuit safety. Its compact 0.5pF capacitance ensures complete high-speed signal transmission without introducing significant delays, making it an ideal choice for protecting precision electronic components from electrostatic damage and helping to improve overall system robustness.]]></description>
</item>
<item>
	<title><![CDATA[HCESD1006UC5VBS(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd1006uc5vbs-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:29:21</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed to be bidirectional and designed specifically for single channel applications, effectively resisting electrostatic impacts. It can still maintain stability at a working voltage of 5V and has the ability to handle peak pulse currents of 4A, ensuring the safety of the circuit. Its low capacitance value, only 0.5pF, ensures high-speed signal transmission without interference, and is very suitable for protecting sensitive electronic devices from electrostatic damage, thereby improving system reliability.]]></description>
</item>
<item>
	<title><![CDATA[HVS3V3BN1HST15R(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hvs3v3bn1hst15r-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:29:09</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is optimized for single channel applications. It is stable and reliable at a working voltage of 3.3V, with strong 4A peak current protection ability, and can effectively resist electrostatic shocks. Its capacitance value is as low as 0.55pF, ensuring that high-speed signal transmission is not affected. It is the preferred solution for electrostatic protection in precision circuits and high-frequency applications, improving system signal integrity and operational stability.]]></description>
</item>
<item>
	<title><![CDATA[HCESD1006UC3V3B(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd1006uc3v3b-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:28:58</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is customized for a 3.3V voltage platform with a single channel design. 4A peak current absorption efficiency, effectively resisting electrostatic impact, and protecting circuit safety. The ultra-low capacitance characteristic of 0.3pF minimizes signal interference and is a high-performance solution to protect high-speed data lines from electrostatic threats.]]></description>
</item>
<item>
	<title><![CDATA[HSTS321150U751(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsts321150u751-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:28:46</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed specifically for single channel circuits, with a withstand voltage of up to 15V, and can effectively withstand 10A instantaneous pulse currents, providing strong electrostatic protection for sensitive electronic components. Thanks to its low capacitance value of only 50pF, it ensures that high-speed signal transmission is not interfered with and is an indispensable protective component in electronic devices and communication systems that pursue both efficient protection and signal quality.]]></description>
</item>
<item>
	<title><![CDATA[HESDSLC5V0T2-TP(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdslc5v0t2-tp-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:28:34</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed specifically for low voltage applications. The dual channel structure supports a working voltage of 5V and can effectively withstand 4A transient current shocks. Its excellent 0.5pF capacitance value ensures that high-speed signal transmission is not affected, providing an excellent electrostatic protection solution for modern precision circuits and ensuring safe operation of equipment.]]></description>
</item>
<item>
	<title><![CDATA[HDF2S6.8MFS,L3M(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdf2s6-8mfs-l3m-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:28:22</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is designed in a unidirectional manner and is suitable for single signal lines. It has a withstand voltage of 5V and can withstand transient current surges of up to 4A, ensuring that the circuit is not damaged by static electricity. Its capacitance value as low as 0.5pF ensures high-speed and pure signal transmission, making it an ideal choice for protecting sensitive components inside various consumer electronics and communication devices, and improving the overall anti-interference and reliability of the system.]]></description>
</item>
<item>
	<title><![CDATA[HAZ2025-01H(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz2025-01h-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:28:10</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for a single signal line, with a voltage withstand voltage of 5V and an 8A peak current processing ability to ensure strong protection. The low capacitance value of 10pF ensures lossless high-speed signal transmission. It is the electrostatic nemesis of electronic devices, with double-sided protection, building an indestructible anti-static barrier for fragile circuits, and improving the overall performance and reliability of the system.]]></description>
</item>
<item>
	<title><![CDATA[HGSOT12C-HG3-18(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot12c-hg3-18-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:27:59</pubDate>
	<description><![CDATA[This high-performance unidirectional ESD electrostatic protection diode is introduced to you. It has a dual channel configuration and can operate stably under a working voltage of 12V. Its outstanding 11A peak current processing capability provides a solid electrostatic protection barrier for the circuit. The low capacitance design of 90 picosecond ensures high-speed and clear signal transmission, making it a wise choice for protecting precision electronic equipment and improving system reliability.]]></description>
</item>
<item>
	<title><![CDATA[HVCUT07B1-HD1-G4-08(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hvcut07b1-hd1-g4-08-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:27:47</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is optimized for single signal protection, with a maximum continuous working voltage of 7V and a peak pulse current processing ability of 9A. It puts invisible armor on the circuit board to resist static interference. The low capacitance design of 8pF ensures smooth and unobstructed high-speed signals, making it the preferred anti-static solution for precision electrical and communication equipment, ensuring both performance and safety.]]></description>
</item>
<item>
	<title><![CDATA[HACPDUC5V0R-HF(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hacpduc5v0r-hf-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:27:35</pubDate>
	<description><![CDATA[This bidirectional ESD protective diode is configured as a single channel, with a withstand voltage of 5V, capable of withstanding 20A instantaneous current shocks, and has a 33pF capacitor to ensure good signal integrity while protecting the circuit from electrostatic damage. It is an ideal component for balancing protection and performance in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HPJSD12W-AU_R1_000A1(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjsd12w-au_r1_000a1-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:27:23</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode focuses on single path protection, with a withstand voltage of 12V and the ability to withstand 9.6A instantaneous current shocks, providing customized electrostatic solutions for electronic devices. The design of a 55pF capacitance value ensures basic signal integrity while meeting most signal protection requirements, making it a reliable choice for improving the anti-static ability of circuits.]]></description>
</item>
<item>
	<title><![CDATA[HDF2B6.8ACT,L3F(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdf2b6-8act-l3f-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:27:11</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is the ideal guardian of single channel circuits, with a working voltage of 5V, which can effectively block instantaneous current shocks and withstand a maximum current of 5.5A, ensuring that sensitive components are not damaged by static electricity. Its compact 10pF capacitance ensures uninterrupted high-speed signal transmission and is suitable for various precision electronic devices, providing stable and efficient electrostatic protection solutions for your circuits.]]></description>
</item>
<item>
	<title><![CDATA[HDESD5V0S1BB-7(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdesd5v0s1bb-7-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:27:00</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single signal lines, with a withstand voltage of 5V and a peak current processing capacity of 20A. It has a capacitance value of 33pF, ensuring signal continuity and equipment safety even in high-energy electrostatic impact environments. It provides a powerful and flexible option for the electrostatic protection needs of electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HSTN101050BL30(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hstn101050bl30-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:26:48</pubDate>
	<description><![CDATA[This ESD protection diode is a bidirectional single channel type, with a working voltage of up to 5V, capable of withstanding instantaneous current surges of 4A, effectively protecting the circuit from electrostatic damage. Its capacitance value is as low as 0.5pF, ensuring high-speed signal transmission without attenuation, making it a high-quality component for protecting precision electronic equipment and enhancing the system‘s ability to resist electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HCESD523NC3V3U(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd523nc3v3u-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:26:36</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is designed specifically for 3.3V voltage level circuits and adopts a single channel structure, which can effectively block up to 11.2A electrostatic discharge current surges, ensuring safe circuit operation. Its compact 130pF capacitance ensures that signal transmission is almost unaffected, making it a carefully selected component for protecting highly sensitive electronic circuits from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HAZ9523-01F(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz9523-01f-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:26:24</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is suitable for single lines and can operate stably at 3.3V voltage. With a peak current processing capability (IPP) of 9A, it can effectively resist electrostatic shocks. Its capacitance value (CJ) as low as 15pF ensures almost no interference in signal transmission, making it an ideal choice for protecting precision circuits from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HCEST363LC5VU(SOT-363)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcest363lc5vu-sot-363-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:26:12</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is equipped with a four channel design and is specially customized for multi line systems. At a working voltage of 5V, it can withstand a transient current surge of 4A, providing solid electrostatic protection for the circuit. A low capacitance value of 0.6pF ensures smooth high-speed signal transmission and is the preferred component for anti-static interference in precision electronic and communication equipment.]]></description>
</item>
<item>
	<title><![CDATA[HPESDNC23T12VU(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdnc23t12vu-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:26:01</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode has a dual channel configuration, specifically designed for 12V voltage platforms, and can withstand instantaneous current surges of up to 22A, providing excellent circuit protection. The capacitance value of 80 picoseconds is exquisitely designed to ensure uninterrupted high-speed signal transmission, making it an ideal choice for protecting electronic devices and improving system stability, safeguarding data security.]]></description>
</item>
<item>
	<title><![CDATA[HAZ4836-01L(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz4836-01l-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:25:49</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed for single channel applications, with a withstand voltage of up to 36V, providing reliable protection even in harsh environments. The peak current processing capability of 4.5A effectively suppresses transient voltage events. In addition, with an ultra-low capacitance value of only 20 picoseconds, it ensures that high-speed signal transmission is not affected, making it an ideal choice for protecting high-voltage sensitive circuits, such as telecommunications equipment and high-end audio interfaces, making performance and protection on par.]]></description>
</item>
<item>
	<title><![CDATA[HPJSD03LCFN2(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjsd03lcfn2-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:25:37</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is a bidirectional single channel device with a working voltage VRWM of 3.3V. It can withstand up to 9A of instantaneous electrostatic discharge current (IPP) and has a small capacitance value of 15pF (CJ), ensuring that the circuit is protected from electrostatic damage while maintaining high speed and integrity of signal transmission. It is very suitable for electrostatic protection solutions in high-precision circuit applications.]]></description>
</item>
<item>
	<title><![CDATA[HCUZ24V,H3F(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcuz24v-h3f-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:25:25</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed specifically for single channel circuits, with a withstand voltage of 24V, and can effectively absorb transient currents up to 6A, providing solid electrostatic protection for high-voltage applications. Although the capacitance value is 25pF, it is still suitable for environments that do not require strict signal speed, ensuring that the circuit can still operate stably under electrostatic impact, making it an ideal choice to improve system robustness.]]></description>
</item>
<item>
	<title><![CDATA[HUCLAMP0511T.TCT(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/huclamp0511t-tct-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:25:13</pubDate>
	<description><![CDATA[The ESD protection diode is a bidirectional single channel structure with a rated voltage of 5V and can withstand a peak transient current of 2.5A. It is the electrostatic guardian of precision circuits. Its low capacitance value of 2.5pF ensures transparent protection in high-frequency signal circuits without causing signal attenuation, making it an ideal component for electrostatic protection in modern micro electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HCEST23NC12VU(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcest23nc12vu-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:25:02</pubDate>
	<description><![CDATA[This product is a unidirectional ESD electrostatic protection diode, equipped with dual channels, designed specifically for 12V voltage systems, capable of withstanding transient current surges of up to 22A, providing strong electrostatic protection for circuits. A capacitance value of 80 picoseconds ensures efficient electrostatic discharge while having minimal impact on signal transmission, making it the preferred solution for protecting precision electronic equipment and high-speed data lines.]]></description>
</item>
<item>
	<title><![CDATA[HPJSD08W-AU_R1_000A1(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjsd08w-au_r1_000a1-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:24:50</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is customized for single channel circuits, with a withstand voltage of 8V, which can effectively suppress electrostatic discharge and protect circuit components. The peak pulse current processing capability of 15A ensures circuit safety in transient overvoltage events. The low capacitance characteristic of 120pF balances protection and signal integrity requirements, making it particularly suitable for consumer electronics or communication devices that require signal speed and limited space, providing thoughtful protection for your precision circuits.]]></description>
</item>
<item>
	<title><![CDATA[HPESD5V0S1BA-QF(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd5v0s1ba-qf-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:24:38</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially designed for a single signal line and can operate stably at a working voltage of 5V, providing up to 25A of instantaneous current absorption capacity and constructing a tight electrostatic protection network. Although the capacitance value of 35pF is slightly higher, it can ensure a wide range of signal types pass through well, making it a strong partner in protecting electronic devices from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HSTS321080B100(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsts321080b100-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:24:26</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is optimized for single channel circuits, with a withstand voltage of 8V and a peak current processing capacity of 18A, effectively blocking electrostatic shocks. The 1pF low capacitance design ensures that high-speed signal transmission is not affected by capacitance, and is the preferred electrostatic protection for precision circuits and high-speed data interfaces, adding important guarantees for the stable performance of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HESDB24C-AQ(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdb24c-aq-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:24:14</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode has a dual channel design and is suitable for 24V voltage circuits. Each channel can withstand an instantaneous current of 4A, with a capacitance of only 10pF, ensuring excellent bidirectional electrostatic protection for electronic devices in high voltage environments while maintaining smooth signal transmission. It is a high-quality choice to improve the system‘s electrostatic protection performance.]]></description>
</item>
<item>
	<title><![CDATA[HPESDNC3D5VU(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdnc3d5vu-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:24:03</pubDate>
	<description><![CDATA[The ESD protection diode adopts a unidirectional design, specifically designed for single signal line protection, with a working voltage of 5V, which can stably respond to daily static threats. The 28A peak current processing capability demonstrates its powerful instantaneous protection performance. In addition, with a capacitance value as low as 200 picoseconds, it ensures uninterrupted high-speed data transmission and is the preferred component for protecting various precision electronic devices from electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HPJSD36W-AU(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjsd36w-au-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:23:51</pubDate>
	<description><![CDATA[We offer you this unidirectional ESD electrostatic protection diode, specially designed for a single signal path, with a withstand voltage value of up to 36V and the ability to withstand 6A peak instantaneous current shocks, providing an indestructible electrostatic protection umbrella for high-voltage systems. Although the capacitance value is 30pF, it can perfectly balance the protection efficiency and signal transmission requirements for non high-speed signal lines, strengthen the electrostatic protection ability of electronic devices, and ensure stable and worry free operation.]]></description>
</item>
<item>
	<title><![CDATA[HDESD3V3S1BL-7B-71(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdesd3v3s1bl-7b-71-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:23:39</pubDate>
	<description><![CDATA[The carefully designed bidirectional ESD protection diode provides a comprehensive electrostatic interference solution for a single signal line. The working voltage VRWM is 3.3V, ensuring stable operation while withstanding a peak instantaneous current IPP of 7A, effectively blocking electrostatic discharge damage. The compact 10pF capacitance value CJ ensures the non-destructive passage of high-speed signals, making it particularly suitable for protecting precision circuits and maintaining excellent and stable performance of equipment in complex electromagnetic environments.]]></description>
</item>
<item>
	<title><![CDATA[HVBUS051BD-HD1-GS08(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hvbus051bd-hd1-gs08-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:23:27</pubDate>
	<description><![CDATA[This single channel directional ESD protection diode can operate stably at 5V voltage, providing 4A transient current protection and effectively suppressing static discharge effects. Its compact 0.6pF capacitance ensures high-speed and clear signal transmission, making it an efficient solution for protecting precision circuits and sensitive electronic components from electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HUCLAMP0511P(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/huclamp0511p-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:23:15</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is a bidirectional single channel configuration with a working voltage of 5V VRWM, capable of withstanding transient current surges of 20A, providing solid protection for sensitive circuits. Its low capacitance value of 40pF ensures the complete and non-destructive high-speed transmission of signals, making it an ideal choice for precision electronic equipment and high-frequency communication applications, effectively improving the overall stability and reliability of the system.]]></description>
</item>
<item>
	<title><![CDATA[HDESD2FLEX2SOQ-7(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdesd2flex2soq-7-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:23:04</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode adopts a bidirectional design, supports dual channel simultaneous protection, has a withstand voltage of 24V, and has a 5A peak current absorption capacity, providing electrostatic protection armor for circuit boards. The low capacitance characteristic of 25pF ensures the non-destructive passage of high-speed signals, making it the preferred solution for electrostatic protection in precision electronic and communication equipment.]]></description>
</item>
<item>
	<title><![CDATA[HSTS232240B151(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsts232240b151-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:22:52</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is tailored for dual line systems. It operates stably at a voltage of 24V, and its 5A peak current absorption capacity ensures high efficiency in combating electrostatic shocks. The low capacitance design of 25 picoseconds ensures clear and delay free signal transmission, making it the preferred component for protecting sensitive electronic devices from electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HPLR0521-T710(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hplr0521-t710-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:22:40</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode adopts a bidirectional design, specifically designed for single signal line protection. It has a rated voltage of 5V and can withstand 4A instantaneous current shocks, providing robust electrostatic protection for the circuit. Its low capacitance value of 0.5pF ensures uninterrupted high-speed signal transmission, making it an ideal choice for electrostatic protection in precision circuits and high-frequency applications.]]></description>
</item>
<item>
	<title><![CDATA[HUCLAMP0511P.TCT(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/huclamp0511p-tct-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:22:28</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode adopts bidirectional technology and is designed specifically for a single signal line. It can operate steadily under a working voltage of 5V, and with a peak current capacity of 20A, it constructs a tight electrostatic protection net for valuable components on the circuit board. The low capacitance characteristic of 40 picosecond ensures efficient and pure signal transmission, making it an ideal guardian of high-end electronic devices and high-speed data interfaces.]]></description>
</item>
<item>
	<title><![CDATA[HESD5Z5.0T5G(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5z5-0t5g-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:22:16</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is specially designed for single channel circuits, with a withstand voltage of 5V and the ability to withstand 9.4A instantaneous high current shocks. It has an 80pF capacitance value and is suitable for scenarios with low signal transmission rates or minimal capacitance impact. It provides a strong electrostatic protection shield for your electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HESDUD05BFX(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdud05bfx-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:22:04</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is a bidirectional single channel configuration, with a withstand voltage of 5 volts and a peak current capacity of 4 amperes, providing effective electrostatic protection for sensitive components on the circuit board. Its low capacitance value of 0.5 picosecond ensures complete and fast signal passage, making it the preferred component for protecting high-speed data lines and precision electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[HESD3V3D5B(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd3v3d5b-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:21:53</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel circuits and can operate stably at 3.3V voltage. It integrates a peak current carrying capacity of 9A and a capacitance value of 15pF, ensuring effective defense against electrostatic discharge while maintaining efficient and pure signal transmission. It is an ideal component for improving the anti-static performance of electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[HESDALC5-1BM2(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdalc5-1bm2-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:21:41</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode adopts a bidirectional design and is specifically configured for a single circuit channel. It can operate stably at a working voltage of 5 volts and has a peak current absorption capacity of 20 amperes, providing strong electrostatic protection for the circuit. In addition, the low capacitance value of only 40 picoseconds ensures high-speed and pure signal transmission, making it the preferred component for protecting modern electronic devices from electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HTESDL5V0B45P1M3(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/htesdl5v0b45p1m3-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:21:29</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed as a single channel, with a withstand voltage of 5V and a high current pulse withstand capacity of 25A, providing strong electrostatic protection for electronic devices. Although the capacitance value is 35pF, it can still effectively balance signal protection and transmission efficiency, making it an ideal component for anti-static impact in precision circuit applications.]]></description>
</item>
<item>
	<title><![CDATA[HSDD32C12L01(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsdd32c12l01-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:21:17</pubDate>
	<description><![CDATA[This bidirectional single channel ESD electrostatic protection diode has a withstand voltage of 12V and can withstand a peak instantaneous current of 11A, providing an indestructible electrostatic barrier for the circuit. The low capacitance value of 38pF ensures that high-speed signals pass without delay, making it an ideal component for achieving efficient protection and signal purity in high-end electronic devices and communication systems. It puts an invisible coat of electrostatic protection on your electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HESDALD03BCX(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdald03bcx-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:21:05</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode adopts a bidirectional design, specifically designed for single signal path protection. The working voltage VRWM is 3.3V, and the capacitance value is as low as 1pF, perfectly adapting to high-speed data transmission requirements without fear of signal attenuation. With a peak pulse current processing capacity of up to 20A, it provides solid protection for circuits and effectively blocks electrostatic discharge interference, making it an ideal component for electrostatic protection in modern electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[HCEZ24V,L3F(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcez24v-l3f-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:20:54</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed specifically for single signal lines in 24V voltage systems. It can effectively withstand 6A instantaneous current shocks with a capacitance value of only 25pF, ensuring high signal integrity while providing efficient electrostatic protection for electronic devices. It is an ideal choice for high reliability applications.]]></description>
</item>
<item>
	<title><![CDATA[HCESD882LC5VB-M(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd882lc5vb-m-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:20:42</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel applications, with a withstand voltage of 5V and a peak current processing capacity of 2.5A, providing strong electrostatic impact protection for the circuit. The small capacitance characteristic of 2.5pF ensures the complete transmission of high-speed signals, making it the preferred solution for protecting highly sensitive electronic circuits and ensuring safer equipment operation.]]></description>
</item>
<item>
	<title><![CDATA[HACPDQC5V0USC-HF(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hacpdqc5v0usc-hf-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:20:30</pubDate>
	<description><![CDATA[This unidirectional ESD protective diode is specially designed for a single signal line and can operate stably at 5V voltage, withstand instantaneous 4A current shocks, and effectively block static electricity invasion. Its compact 0.5pF capacitance ensures complete and non-destructive signal, especially suitable for scenarios that require high-speed data transmission and electrostatic sensitive applications, providing reliable protection for your electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HSTS321360B141(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsts321360b141-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:20:18</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for a single signal channel, with 36V voltage tolerance and 7A peak current processing performance, achieving efficient bidirectional electrostatic protection. The capacitance value of 15pF finely balances protection efficiency and signal transmission quality, especially suitable for electronic devices that require high reliability electrostatic protection, providing a solid protective umbrella for sensitive circuits.]]></description>
</item>
<item>
	<title><![CDATA[HCDDFN2-T5.0LC(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcddfn2-t5-0lc-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:20:06</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is designed as a bidirectional single channel, with a working voltage VRWM of 5V and a 4A peak instantaneous current processing capability, ensuring excellent circuit protection effect. Its capacitance value is only 0.5pF, which helps to reduce signal attenuation and is very suitable for protecting precision circuits in high-frequency or data-intensive applications from electrostatic discharge, improving the overall stability and reliability of the system.]]></description>
</item>
<item>
	<title><![CDATA[HDESD24VS2SO-7(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdesd24vs2so-7-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:19:55</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is equipped with a dual channel design, which can work stably under 24V voltage and provide long-lasting electrostatic protection. With the ability to handle 7A peak current, it ensures the safety of the circuit. In addition, with a capacitance value of only 40 picoseconds, it achieves high-speed signal transmission and minimal signal interference, making it an ideal choice for protecting precision electronic equipment from electrostatic impact.]]></description>
</item>
<item>
	<title><![CDATA[HESD5581MXT5G(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5581mxt5g-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:19:43</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for 5V single channel circuits, with strong voltage resistance and the ability to withstand 9A instantaneous current shocks, providing solid electrostatic protection for equipment. Although the capacitance value is 15pF, which is more suitable for low-frequency signal transmission, it can still effectively prevent static damage and is an ideal anti-static solution in the fields of consumer electronics, household appliances, etc., ensuring long-term stability and safety of circuits.]]></description>
</item>
<item>
	<title><![CDATA[HAZ5725-01F(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz5725-01f-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:19:31</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is exquisitely designed with bidirectional protection function, specifically designed for single channel applications. It can operate stably at a voltage of 5V and withstand transient peak currents of up to 5.5A, ensuring circuit safety. The capacitance value as low as 10pF ensures signal integrity, making it particularly suitable for electronic devices with high requirements for speed and reliability. It effectively protects against electrostatic impact and extends the service life of the equipment.]]></description>
</item>
<item>
	<title><![CDATA[HACPDQ03C5V0AU-HF(DFN1006-3L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hacpdq03c5v0au-hf-dfn1006-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:19:19</pubDate>
	<description><![CDATA[A carefully crafted ESD protection solution - this unidirectional ESD electrostatic protection diode is equipped with dual channels, capable of continuous operation at 5V voltage, with a peak current processing capacity of 3A, providing protection for sensitive circuits. Its outstanding 0.45pF low capacitance characteristics ensure high-speed signal transmission without damage, making it very suitable for protecting data circuits in precision electronic equipment, preventing static damage, and improving system reliability.]]></description>
</item>
<item>
	<title><![CDATA[HAOZ8211DI-12(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haoz8211di-12-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:19:08</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed for a single circuit path, with a withstand voltage of 12V (VRWM) and the ability to withstand 4A peak transient current (IPP). It performs excellently in protecting electronic devices from electrostatic damage. Its compact 28pF capacitance (CJ) reduces interference with high-speed signals and is suitable for various precision electronic applications, ensuring fast and safe data transmission.]]></description>
</item>
<item>
	<title><![CDATA[HESD7501MUT5G(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd7501mut5g-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:18:56</pubDate>
	<description><![CDATA[This bidirectional ESD protective diode is optimized for single channel applications, stable at 5V operating voltage, and has strong 4A peak current processing ability, effectively suppressing static electricity hazards. The design with a low capacitance value of 0.55pF ensures non-destructive passage of high-speed signals, making it the preferred component in precision electronic and communication equipment to prevent electrostatic impact and maintain signal purity.]]></description>
</item>
<item>
	<title><![CDATA[HDF2B6.8E,L3F(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdf2b6-8e-l3f-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:18:44</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially designed for single channel operation, with a working voltage of up to 5V, which can adapt to higher voltage level circuit protection requirements. The peak pulse current processing capacity of 9A provides a solid electrostatic protection wall for electronic devices. Despite having a capacitance value of 15pF, carefully designed to ensure signal transmission is almost unaffected, making it an ideal choice for balancing protection and performance in modern electronic design.]]></description>
</item>
<item>
	<title><![CDATA[HESD9BL0521P(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd9bl0521p-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:18:32</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed for a single channel configuration, with a withstand voltage of 5V and the ability to withstand 4A peak instantaneous current shocks, ensuring the safety of the circuit under electrostatic shocks. Its capacitance value as low as 0.5pF ensures high-speed transmission and clarity of signals, making it the preferred solution for protecting various sensitive electronic devices, especially suitable for small high-performance systems that require efficient electrostatic protection.]]></description>
</item>
<item>
	<title><![CDATA[SRV05-4D(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/srv05-4d-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:18:20</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode integrates 4 channels of protection, and is stable and reliable at a working voltage of 5V. It can withstand 4A instantaneous current shocks, building a strong barrier for circuit safety. In addition, the ultra-low capacitance design of 0.5pF greatly reduces the risk of signal attenuation, making it the preferred solution to protect high-speed data lines from electrostatic interference and ensuring the stable operation of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HSD12C-7(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsd12c-7-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:18:08</pubDate>
	<description><![CDATA[This bidirectional ESD protective diode is designed specifically for a single signal line, with a withstand voltage of 12V and the ability to withstand 11A instantaneous pulse current shocks, providing hidden anti-static armor for precision components on circuit boards. The low capacitance design of 38pF ensures smooth and unobstructed high-speed signals, making it an exquisite device that ensures data integrity and system stability, especially suitable for electronic devices that are sensitive to static electricity and require high transmission rates.]]></description>
</item>
<item>
	<title><![CDATA[HPESD5V0L1BA,135(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd5v0l1ba-135-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:17:57</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for a single signal line and can withstand a 5V DC working voltage. It has a strong 17A instantaneous pulse current absorption ability, ensuring that sensitive circuits are not affected by static electricity. Its compact 90pF capacitance ensures signal transmission without delay, making it very suitable for protecting weak components in high-frequency and data intensive equipment, and improving the overall robustness of the system.]]></description>
</item>
<item>
	<title><![CDATA[HACPDQC5V0ESPC-HF(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hacpdqc5v0espc-hf-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:17:45</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially designed for single channel applications, with stable and reliable operation voltage of 5V and 3A peak current processing capacity, providing comprehensive electrostatic protection. The 0.8pF capacitance design ensures non-destructive passage of high-speed signals and is the preferred component for protecting various precision circuits and sensitive electronic devices, adding a stable electrostatic protection layer to modern electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[HAZC199-04C(SOT-363)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hazc199-04c-sot-363-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:17:33</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode adopts a unidirectional design and has 4 independent channels. It can operate stably at 5 volts and effectively withstand 4 ampere peak current shocks, providing electrostatic protection for circuit boards. A capacitance value of 0.6 picosecond ensures fast signal transmission without attenuation, making it the preferred solution for protecting modern highly sensitive electronic devices from electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HPE4215CS_R1_00001(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpe4215cs_r1_00001-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:17:21</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is designed as a single channel, with a withstand voltage of 15V and the ability to withstand 10A peak pulse current, providing reliable electrostatic protection for the circuit. The low capacitance characteristic of 50pF ensures signal integrity and is particularly suitable for high-speed data transmission applications, without causing significant signal delay. It is an ideal solution for electrostatic protection in precision electronic and communication equipment.]]></description>
</item>
<item>
	<title><![CDATA[HSTN101050B301(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hstn101050b301-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:17:09</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is optimized for single channel circuits and is stable and reliable at a working voltage of 5V. Its 20A peak current processing ability effectively resists electrostatic shocks. The 40pF low capacitance design ensures signal integrity and is particularly suitable for high-speed data transmission applications, building a solid electrostatic protection network for sensitive electronic components and enhancing the overall robustness and safety of the system.]]></description>
</item>
<item>
	<title><![CDATA[HL13ESD5V0CE2(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hl13esd5v0ce2-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:16:57</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is a bidirectional single channel structure, with a voltage resistance VRWM of 5V, capable of withstanding instantaneous pulse current surges of up to 20A, ensuring circuit safety. Its capacitance value as low as 40 picoseconds makes signal transmission almost unaffected, making it an efficient solution to protect electronic devices from electrostatic damage. It is very suitable for scenarios that require high-speed data transmission and high sensitivity applications.]]></description>
</item>
<item>
	<title><![CDATA[HD5V0L1B2T-7(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hd5v0l1b2t-7-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:16:46</pubDate>
	<description><![CDATA[The ESD protection diode is a bidirectional single channel structure with a rated voltage VRWM of 5V, which can adapt to higher voltage requirements. The 9A peak pulse current processing capability provides a strong electrostatic protection shield for the circuit. Although the capacitance value is 15pF, it can still ensure that most signal transmission is unobstructed, making it a compact solution to enhance the electrostatic immunity of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HDT1446-04S-7(SOT-363)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdt1446-04s-7-sot-363-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:16:34</pubDate>
	<description><![CDATA[This high-performance ESD electrostatic protection diode adopts unidirectional technology and is equipped with four channel synchronous protection. The working voltage can reach 5V and can withstand 4A instantaneous current shocks, providing a solid guarantee for circuit safety. The low capacitance characteristic of 0.6pF ensures the non-destructive passage of high-speed signals, especially suitable for electronic devices with strict requirements for signal quality, and is a leader in the field of electrostatic protection.]]></description>
</item>
<item>
	<title><![CDATA[HRLSD32A361C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrlsd32a361c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:16:22</pubDate>
	<description><![CDATA[We recommend this bidirectional ESD electrostatic protection diode, specifically designed for single signal lines, with a withstand voltage of up to 36V and the ability to effectively withstand 7A instantaneous current shocks, achieving bidirectional electrostatic protection. The 15pF low capacitance design ensures almost no interference in signal transmission, making it an ideal companion for high-end electronic devices and sensitive circuits to resist electrostatic interference, ensuring the safety of your equipment.]]></description>
</item>
<item>
	<title><![CDATA[HTESDH5V0U04P2Q1(DFN1006-3L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/htesdh5v0u04p2q1-dfn1006-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:16:10</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed specifically for precision circuits, using unidirectional protection technology and equipped with dual channels. It can operate stably at a working voltage of 5V and has the ability to handle 3A peak pulse current, effectively resisting transient high voltage and ensuring system safety. The capacitance value as low as 0.45pF ensures signal integrity and is particularly suitable for electrostatic protection in high-speed data lines, without affecting signal transmission quality.]]></description>
</item>
<item>
	<title><![CDATA[HVBUS03B1-SD0-G4-08(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hvbus03b1-sd0-g4-08-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:15:58</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is specially designed for single signal protection, with a withstand voltage of 3.3V and the ability to withstand 4A transient current shocks, providing strong electrostatic defense for circuits. The small capacitance value of 0.55pF ensures high-speed response and low distortion in signal transmission, making it an ideal component for protecting precision electronic equipment and maintaining the purity of high-frequency signals, enhancing the overall anti-static interference ability of the system.]]></description>
</item>
<item>
	<title><![CDATA[HSZESD5Z3.3T5G(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hszesd5z3-3t5g-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:15:47</pubDate>
	<description><![CDATA[A carefully designed unidirectional ESD protection diode designed specifically for 3.3V voltage circuits, with a streamlined and efficient single channel structure. Capable of withstanding 11.2A peak current surge, providing solid protection for the circuit. A small capacitance value of 130pF ensures complete transmission of high-speed signals, making it the preferred solution for protecting precision electronic equipment from electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HAOZ8822DI-05(DFN1006-3L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haoz8822di-05-dfn1006-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:15:35</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is specially designed for dual channel applications, with a withstand voltage of 5V per channel, effectively blocking electrostatic pulses. The 3A peak current absorption capacity adds a safety barrier to the circuit. Its ultra-low capacitance characteristic of 0.45pF greatly reduces signal attenuation, making it an ideal companion for high-speed data lines and sensitive electronic devices, ensuring fast and pure signal transmission, and providing a lightweight and powerful electrostatic protection solution for your electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HRSAC6.8CMT2R(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrsac6-8cmt2r-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:15:23</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is the ideal guardian of precision circuits, capable of continuous operation at 5V DC voltage, providing 4A peak current protection to prevent electrostatic damage. Its compact 0.5pF capacitance ensures smooth and unobstructed high-speed signal paths without introducing significant delays, making it particularly suitable for protecting portable electronic devices and high-frequency communication interfaces, ensuring safe operation of devices in complex electromagnetic environments.]]></description>
</item>
<item>
	<title><![CDATA[HDUP2105SOQ-7(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdup2105soq-7-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:15:11</pubDate>
	<description><![CDATA[The carefully designed bidirectional ESD electrostatic protection diode has a dual channel structure, ensuring the safety and worry free operation of dual channel electronic devices. It operates stably at a working voltage of 24V, and its 5A peak current processing ability highlights its powerful protection performance. A small capacitance value of 25 picoseconds ensures high-speed and pure signal transmission, making it a carefully selected component for electrostatic protection in modern electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[HESD9BL0522P-C(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd9bl0522p-c-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:14:59</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel applications, with a withstand voltage of 5V and a 4A peak current processing capability, providing comprehensive electrostatic protection for circuits. The low capacitance characteristic of 0.5pF ensures lossless transmission of high-speed signals, making it an ideal solution to protect modern electronic devices from electrostatic interference and maintain system stability.]]></description>
</item>
<item>
	<title><![CDATA[HRCLAMP3331ZA(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrclamp3331za-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:14:48</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is designed as a bidirectional single channel, stable and reliable under a working voltage of 3.3V, with excellent 4A peak current protection performance, which can effectively block the threat of static electricity. Its ultra-low capacitance value of 0.55pF ensures non-destructive passage of high-speed signals, making it particularly suitable for protecting high-frequency circuits and enhancing the overall electromagnetic compatibility and data security of the system.]]></description>
</item>
<item>
	<title><![CDATA[HCEST23UC5VU(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcest23uc5vu-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:14:36</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is a dual channel configuration that is suitable for 5V voltage environments. It has a 4A instantaneous current withstand capacity, combined with 0.5pF ultra-low capacitance characteristics, to ensure the integrity of high-speed signals without damage. It is an efficient guard against static damage in precision circuits, making your electronic devices operate more reassuring and stable.]]></description>
</item>
<item>
	<title><![CDATA[HSP4024-01FTG-C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsp4024-01ftg-c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:14:24</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel circuits, with a withstand voltage of 24V and the ability to withstand 6A instantaneous current shocks, effectively suppressing electrostatic damage. Its small capacitance value of 1.3pF ensures that high-speed signals pass without delay, making it the preferred solution for protecting high-frequency data lines and sensitive electronic components, adding an intangible electrostatic shield to the equipment.]]></description>
</item>
<item>
	<title><![CDATA[HCESD1006LC5VB-M(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd1006lc5vb-m-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:14:12</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is designed as a bidirectional single channel, with a working voltage of 5V, and can effectively withstand 2.5A instantaneous impulse current, ensuring circuit safety. Its ultra-low 2.5pF capacitance characteristics perfectly adapt to high-speed signal environments without affecting data transmission quality, providing invisible electrostatic protection shields for various precision electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HCPDZC5V0B-HF(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcpdzc5v0b-hf-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:14:00</pubDate>
	<description><![CDATA[This ESD protection diode has a bidirectional single channel structure, with a withstand voltage of 5V and a peak current tolerance of 4A, providing comprehensive electrostatic protection for the circuit. Its capacitance value is only 0.55pF, ensuring high-speed and clear signal transmission, making it very suitable for protecting electronic devices that are sensitive to static electricity and require high-speed data exchange. It is a key component for improving system reliability.]]></description>
</item>
<item>
	<title><![CDATA[HESDALD05UD4X(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdald05ud4x-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:13:48</pubDate>
	<description><![CDATA[A carefully crafted unidirectional ESD protection diode equipped with four parallel protection mechanisms, with a maximum operating voltage of 5V and a peak current tolerance of 4A, ensuring circuit safety. The ultra-low 0.5pF capacitance design perfectly adapts to high-speed signal paths, effectively isolates static interference, and equips your precision circuits with invisible shields to ensure the purity and safety of data transmission.]]></description>
</item>
<item>
	<title><![CDATA[HVESD05-02V(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hvesd05-02v-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:13:37</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed specifically for a single channel, with a withstand voltage of 5 volts and a peak current capacity of 9.4 amperes. It has an 80 picosecond capacitance value and is suitable for low-frequency signals or applications that are not sensitive to capacitance. It provides strong and targeted electrostatic protection for electronic circuits, ensuring equipment stability and safety.]]></description>
</item>
<item>
	<title><![CDATA[HSPD91011W-2/TR(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hspd91011w-2-tr-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:13:25</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed for bidirectional protection, specifically designed for precision circuits with a single channel. It can operate stably at a working voltage of 3.3V and has a peak pulse current processing ability of 17A, effectively resisting transient high-voltage shocks. Its low capacitance value of 1pF ensures high-speed signal transmission without interference, making it very suitable for protecting sensitive electronic devices from electrostatic discharge damage and ensuring stable system operation.]]></description>
</item>
<item>
	<title><![CDATA[HDESDALC5LP-7B(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdesdalc5lp-7b-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:13:13</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode has bidirectional conductivity and is designed specifically for a single circuit channel. The maximum working voltage of 5V and the peak current processing capacity of 20A effectively block the damage caused by electrostatic discharge. The low capacitance value of 40 picoseconds ensures the non-destructive passage of high-speed signals, making it the preferred solution for protecting precision components in electronic circuits and enhancing the stability and safety of the system in complex electromagnetic environments.]]></description>
</item>
<item>
	<title><![CDATA[HESDULC12VD3B(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdulc12vd3b-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:13:01</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is designed as a bidirectional single channel, suitable for multi-directional protection needs. It operates stably at a voltage of 12V and has a peak current absorption capacity of 12A, providing an invisible "anti-static vest" for the circuit board. In addition, with a low capacitance value of only 1pF, high-speed signal transmission is not affected, making it a carefully selected component to ensure the safe operation of sensitive electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HAZ2225-01L.R7G(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz2225-01l-r7g-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:12:49</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is tailored for single channel circuits, with stable and reliable performance at a working voltage of 5V and a peak current processing capacity of 11A that surpasses peers, ensuring excellent electrostatic protection effects. Although the capacitance value of 20pF is slightly higher, it can effectively block the threat of static electricity and maintain signal transmission for non high-speed signal lines, making it a powerful assistant for many electronic devices to prevent static electricity.]]></description>
</item>
<item>
	<title><![CDATA[HSM36(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsm36-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:12:38</pubDate>
	<description><![CDATA[The ESD protection diode is a unidirectional type with a dual channel configuration, withstand voltage of 36V, and can withstand 5A instantaneous current shocks, providing strong electrostatic protection for electronic circuits. Its low capacitance characteristic of 35 picoseconds ensures fast signal transmission and high integrity, making it an ideal component for protecting high-end electronic devices and improving system immunity.]]></description>
</item>
<item>
	<title><![CDATA[HPE4218CS_R1_00001(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpe4218cs_r1_00001-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:12:26</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is specially designed for single signal lines and can operate stably at a working voltage of 18V. Its outstanding instantaneous current withstand capacity reaches 9A, building a strong defense line for sensitive electronic components. The low capacitance design of only 58 picoseconds ensures non-destructive transmission of high-speed signals, making it an ideal choice for protecting applications sensitive to static electricity such as mobile devices and communication interfaces, while also providing efficient protection and signal integrity.]]></description>
</item>
<item>
	<title><![CDATA[HPESD3V3V1BCSF-N(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd3v3v1bcsf-n-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:12:14</pubDate>
	<description><![CDATA[A carefully designed bidirectional ESD electrostatic protection diode specially designed for 3.3V circuit protection, with a simplified and efficient single channel structure. With a transient current withstand capacity of 5A and a capacitance value of 12pF, it effectively blocks the harm caused by electrostatic discharge while ensuring the integrity of signal transmission. It is particularly suitable for protecting electronic devices that are sensitive to static electricity and have certain requirements for signal quality, providing protection for your circuit safety.]]></description>
</item>
<item>
	<title><![CDATA[HCESD523NC5VB(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd523nc5vb-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:12:02</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel circuits, with a voltage protection level of 5V VRWM, which can effectively absorb transient currents up to 8A, and its capacitance value as low as 10pF ensures smooth and unobstructed high-speed signals. It is like an electrostatic shield in a circuit, providing two-way electrostatic impact protection for electronic devices, enhancing the stability of system operation and the purity of data transmission.]]></description>
</item>
<item>
	<title><![CDATA[HESD5431XZ(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5431xz-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:11:51</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is a single channel device that operates at 3.3V voltage and has strong electrostatic protection function. The peak current processing capability of 5A and the low coupling capacitance of 12pF ensure smooth transmission of signals over a wide frequency range while protecting sensitive circuits from electrostatic damage. It constitutes an effective line of defense for electrostatic protection in electronic products, enhancing the overall stability and reliability of the system.]]></description>
</item>
<item>
	<title><![CDATA[HSM12-7(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsm12-7-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:11:39</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode features a dual channel design and is specifically designed for 12V voltage circuits. It can withstand 11A instantaneous surge current and is equipped with electrostatic protection armor. The 90 picosecond low capacitance characteristic ensures smooth and unobstructed high-speed signals, making it an ideal guardian for precision circuits and data transmission applications, ensuring the safety and worry free flow of every piece of data.]]></description>
</item>
<item>
	<title><![CDATA[HCESD882NC3V3B(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd882nc3v3b-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:11:27</pubDate>
	<description><![CDATA[This ESD protection diode is designed in both directions and is specifically designed for a single signal line. It can operate stably at 3.3V and withstand sudden static electricity impacts. It can withstand a peak current protection of 9A and is embedded with a low capacitance value of 15pF, ensuring efficient protection while reducing the impact on signal transmission. It is suitable for electrostatic protection needs in various sensitive electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HESDSBULC5V0LB(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdsbulc5v0lb-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:11:15</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed specifically for single signal protection. Stable and reliable under a working voltage of 5V, with strong peak current processing ability of 4A, it can effectively block the harm of electrostatic discharge to the circuit. The 0.6pF low capacitance characteristic ensures complete transmission of high-speed signals, making it the preferred solution for protecting microelectronic equipment and highly sensitive circuits, and improving the anti-static level of the system.]]></description>
</item>
<item>
	<title><![CDATA[HDESD24VL2BTQ-7(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdesd24vl2btq-7-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:11:03</pubDate>
	<description><![CDATA[This product is a bidirectional ESD electrostatic protection diode with dual channels, suitable for 24V voltage systems. Each channel can withstand 4A instantaneous current impulse, with a capacitance value of 10pF, ensuring efficient bidirectional protection against electrostatic damage. At the same time, the impact on signal transmission is minimal. It is a selected component to ensure the safe operation of high-voltage circuits.]]></description>
</item>
<item>
	<title><![CDATA[HAQ24CANFD-02HTG(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haq24canfd-02htg-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:10:52</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is equipped with dual channels and is designed specifically for 24V voltage platforms. Each channel can withstand a peak current of 4A, with a capacitance as low as 10pF. It provides comprehensive electrostatic protection for electronic devices in high-voltage systems while maintaining signal purity, making it an ideal component for improving the level of electrostatic protection in the system and ensuring signal quality.]]></description>
</item>
<item>
	<title><![CDATA[HRLSD32A241LC(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrlsd32a241lc-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:10:40</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is a bidirectional single channel structure with a rated voltage of 24V, capable of withstanding a maximum transient current impulse of 6A, and is the electrostatic guardian of precision circuits. Its 1.3pF low capacitance characteristic ensures smooth and unobstructed high-speed signals, perfectly integrating efficient protection and signal integrity requirements, providing strong support for sensitive components in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HCPDV24V0-HF(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcpdv24v0-hf-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:10:28</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially designed for single lines, with a withstand voltage of 24V and a peak current processing of 6A, providing a strong electrostatic protection barrier for circuits. The low capacitance design of 1.3pF ensures signal integrity and is particularly suitable for high-speed data transmission, effectively preventing electrostatic interference and improving the overall stability and reliability of the system.]]></description>
</item>
<item>
	<title><![CDATA[HCEST363NC5VU(SOT-363)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcest363nc5vu-sot-363-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:10:16</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode features a unique design that includes 5 channels and operates at a VRWM of 5V, capable of carrying a peak current of 5A, providing comprehensive protection for multi line systems. Although the capacitance value is 30pF, it is still suitable for applications with low sensitivity to capacitance, ensuring good signal transmission performance while protecting the circuit from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HCPDV3V3A-HF(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcpdv3v3a-hf-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:10:04</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is specially designed for a single signal line, with a voltage resistance of 3.3V and a capacitance as low as 1pF, ensuring that high-speed signals are intact and undamaged. Its 20A peak current withstand capacity provides valuable components on the circuit board with invisible anti-static armor, making it an indispensable electrostatic guardian for both portable devices and communication systems.]]></description>
</item>
<item>
	<title><![CDATA[HLY323BC1524L(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hly323bc1524l-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:09:53</pubDate>
	<description><![CDATA[This bidirectional single channel ESD electrostatic protection diode has a withstand voltage of 15V and a peak pulse current processing capacity of 10A, providing bidirectional electrostatic impact protection for circuit boards. The ultra-low capacitance design of 9pF ensures uninterrupted high-speed signal transmission, making it the preferred solution for protecting high-performance electronic devices and high-frequency data lines, making your products more resilient and reliable in the ever-changing electronic world.]]></description>
</item>
<item>
	<title><![CDATA[HDESD5V0S1BLP3-7(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdesd5v0s1blp3-7-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:09:41</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed for single channel circuits in a 5V voltage environment, with a 9A instantaneous current processing capability, forming a reliable electrostatic protection network. A capacitance value of 15pF is suitable for signal lines with low speed sensitivity, effectively isolating static interference and providing economical and practical static protection solutions for various consumer grade electronic products, ensuring stable operation of equipment under various conditions.]]></description>
</item>
<item>
	<title><![CDATA[HAZ4624-01L(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz4624-01l-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:09:29</pubDate>
	<description><![CDATA[This bidirectional ESD protective diode is designed for single channel applications and has the ability to handle maximum continuous operating voltage of 24V and 6A peak transient current, providing robust electrostatic protection for circuits. The low capacitance characteristic of 1.3pF ensures that high-speed signals pass without attenuation, making it the preferred solution to protect highly sensitive electronic devices and data lines from electrostatic damage, ensuring both signal quality and system stability.]]></description>
</item>
<item>
	<title><![CDATA[HAZ4012-01F(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz4012-01f-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:09:17</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed specifically for precision circuits, using unidirectional protection technology with a single channel configuration, and can operate stably at a working voltage of 12V. Its transient current withstand capacity reaches 4A, effectively resisting electrostatic impact and ensuring system safety. The capacitance value as low as 28pF ensures uninterrupted high-speed signal transmission, making it suitable for applications with strict requirements for signal integrity.]]></description>
</item>
<item>
	<title><![CDATA[HCESD0603UT5VBS(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd0603ut5vbs-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:09:05</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single line operation, with a maximum working voltage of 5V and a peak current processing capacity of 4A, achieving efficient electrostatic protection. The 0.55pF low capacitance characteristic ensures fast signal transmission without attenuation, making it an ideal device for protecting electronic circuit components and improving system stability, suitable for various electrostatic sensitive technology equipment.]]></description>
</item>
<item>
	<title><![CDATA[HCESD0603UC5VB-M(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd0603uc5vb-m-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:08:53</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is specially customized for a single signal line, with a withstand voltage of 5V and can withstand 4A instantaneous pulse current, providing equipment with electrostatic protection armor. The 0.55pF ultra-low capacitance design ensures smooth and unobstructed high-speed signals, making it the preferred solution to protect high-performance electronic devices from electrostatic interference, ensuring fast and safe data transmission.]]></description>
</item>
<item>
	<title><![CDATA[HSESDONCAN1LT1G(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsesdoncan1lt1g-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:08:41</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode has a dual channel design, suitable for working voltage environments of 24V. Each channel can withstand transient current shocks of 4A, with a capacitance value of 10pF, ensuring bidirectional electrostatic protection in high-voltage circuits without affecting signal integrity, providing strong electrostatic interference defense for electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HPESD5V0U1UT(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd5v0u1ut-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:08:30</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode adopts a dual channel design and is optimized for low voltage (5V VRWM) applications. It can withstand 4A peak current shocks and has an extremely low capacitance value of 0.5pF, ensuring that high-speed signals pass without delay. It is a high-performance solution to protect sensitive circuits from electrostatic interference, improving system stability and reliability.]]></description>
</item>
<item>
	<title><![CDATA[HDESD5V0S1BAQ-7(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdesd5v0s1baq-7-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:08:18</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single line operation and can operate stably at 5V voltage, providing transient current protection of up to 25A, ensuring circuit safety. Although the capacitance value is 35pF, it is sufficient for most applications to maintain clear signal transmission, making it an ideal choice for improving the electrostatic protection level of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HPJSD36W_R1_00001(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjsd36w_r1_00001-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:08:06</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed for a single channel, with a withstand voltage of up to 36V and the ability to withstand 6A instantaneous surge current, providing professional level electrostatic protection for high-voltage circuits. Despite having a capacitance value of 30pF, it can still effectively ensure the stability and safety of circuits in the face of electrostatic challenges in applications with low signal speed requirements, making it a reliable partner for enhancing equipment‘s electrostatic immunity.]]></description>
</item>
<item>
	<title><![CDATA[HRCLAMP0551P(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrclamp0551p-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:07:54</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is a bidirectional type designed specifically for a single channel, with a withstand voltage of 5 volts, and can effectively withstand a peak current impulse of 4 amperes, ensuring safe operation of the circuit in electrostatic environments. Its capacitance value is as low as 0.5 picosecond, which helps reduce signal interference and is particularly suitable for protecting high-frequency transmission and electrostatic sensitive electronic devices, improving the overall stability and reliability of the system.]]></description>
</item>
<item>
	<title><![CDATA[HCESD0603NC5VB(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd0603nc5vb-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:07:43</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is specially designed for single channel circuits with a working voltage of 5V, and has a peak current withstand capacity of 9A, providing a stable electrostatic protection cover for electronic devices. The 15pF capacitance value is suitable for low-frequency or non time critical signal paths, ensuring the integrity of the basic signal. It is a preferred component for preventing electrostatic damage and improving circuit reliability, suitable for a wide range of electronic consumer product applications.]]></description>
</item>
<item>
	<title><![CDATA[HCPDH5V0P-HF(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcpdh5v0p-hf-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:07:31</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially designed for single signal lines and can operate stably at 5V voltage, effectively absorbing 2.5A instantaneous pulse current and preventing static damage. Its 3-picosecond capacitance value is small, ensuring the non-destructive passage of high-speed signals, making it an ingenious solution for protecting sensitive electronic components.]]></description>
</item>
<item>
	<title><![CDATA[HCPDVR7V0-HF(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcpdvr7v0-hf-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:07:19</pubDate>
	<description><![CDATA[A carefully designed bidirectional ESD protection diode, optimized for single channel protection, operates stably and reliably at 7V voltage, can withstand 9A peak transient current impact, and builds a strong defense line for sensitive circuits. The small capacitance characteristic of 8pF ensures the non-destructive passage of high-speed signals, making it a powerful assistant for protecting precision electronic devices and maintaining signal integrity, providing powerful and delicate protection for various electrostatic sensitive applications.]]></description>
</item>
<item>
	<title><![CDATA[HESDALD15BCX(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdald15bcx-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:07:07</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single signal lines, with a working voltage of 15V, capable of withstanding 10A instantaneous high current shocks, effectively intercepting electrostatic threats. Its capacitance value as low as 1pF ensures smooth and unobstructed high-speed data transmission, making it an ideal companion for protecting precision circuits and sensitive components.]]></description>
</item>
<item>
	<title><![CDATA[HPESDUC3D3V3B(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesduc3d3v3b-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:06:55</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is designed as a bidirectional single channel, suitable for low voltage application environments, with a rated voltage VRWM of 3.3V. With its excellent 20A peak current processing ability, it can effectively suppress the damage caused by electrostatic discharge. A small capacitance value of 1pF ensures that high-speed signals pass without delay, making it an efficient solution to protect sensitive electronic devices from electrostatic impact.]]></description>
</item>
<item>
	<title><![CDATA[HPTVSUC3D3V3B(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hptvsuc3d3v3b-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:06:43</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is optimized for 3.3V voltage applications and achieves efficient bidirectional protection through a single channel. Its transient current withstand capacity of 17A provides strong electrostatic shock defense for the circuit. In addition, the low capacitance characteristic of only 1pF ensures the non-destructive and pure transmission of high-speed signals, making it an ideal companion for anti-static in precision electronics and high-speed data circuits.]]></description>
</item>
<item>
	<title><![CDATA[HPESDNC3D18VB(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdnc3d18vb-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:06:32</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is specially designed for single channel applications, with a voltage resistance of 18V and the ability to block electrostatic impacts in both directions. It has an IPP of 9A and provides electrostatic protection armor for equipment. Its 30pF small capacitance ensures smooth and unobstructed high-speed signals, making it the preferred solution to protect various consumer electronics and communication devices from electrostatic damage, making data transmission both fast and safe.]]></description>
</item>
<item>
	<title><![CDATA[HSP3012-04HTG(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsp3012-04htg-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:06:20</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode integrates 4 protection channels and is specially customized for precision electronic applications. The maximum continuous working voltage of 5V, combined with the peak pulse current processing ability of 4A, forms a solid defense line. A small capacitance value of 0.5pF ensures uninterrupted high-speed signal transmission, providing efficient and low impact electrostatic protection solutions for various sensitive circuits.]]></description>
</item>
<item>
	<title><![CDATA[HCPDH5V0UB-HF(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcpdh5v0ub-hf-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:06:08</pubDate>
	<description><![CDATA[The ESD protection diode is a unidirectional type, optimized for single signal line protection, with a withstand voltage of 5V and a peak current processing capacity of 9.4A. The capacitance of 80pF is suitable for low-frequency signal environments, providing a stable and reliable electrostatic protection solution for electronic devices, ensuring stable operation of the system without electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HPESDNC2FD12VB(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdnc2fd12vb-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:05:56</pubDate>
	<description><![CDATA[The ESD protection diode is designed as a bidirectional single channel, with a withstand voltage of up to 12V, and can withstand 5A instantaneous current shocks, providing strong electrostatic protection capabilities for the circuit. Although the capacitance value is 10pF, it can still ensure sufficient signal transparency in many applications, making it a reliable partner for maintaining circuit board electrostatic safety and ensuring stable equipment operation.]]></description>
</item>
<item>
	<title><![CDATA[HRLSD32A121LC(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrlsd32a121lc-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:05:44</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode has bidirectional protection function, suitable for single line configuration, can work stably at 12V voltage, provide 12A peak current protection, and effectively resist the harm caused by electrostatic discharge. Its 1pF small capacitance characteristic ensures unobstructed high-speed signal transmission, making it the preferred solution to protect precision electronic devices from electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HESDALD12BCX(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdald12bcx-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:05:33</pubDate>
	<description><![CDATA[Carefully crafted bidirectional ESD protective diode, specially customized for single signal lines. The maximum continuous working voltage of 12V and the processing capacity of 12A peak pulse current enable efficient electrostatic shielding and protect the circuit from transient voltage damage. A low capacitance value of only 1 picafar ensures complete high-speed signals without delay, making it an exquisite choice for ensuring the safe and smooth operation of high-performance electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HESD5Z3.3T5G(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5z3-3t5g-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:05:21</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is optimized for low voltage applications, requiring only 1 channel to operate. It can withstand 3.3V voltage and has a strong transient current withstand capacity of 11.2A, ensuring that the circuit is foolproof. In addition, the low capacitance characteristic of 130pF perfectly adapts to high-frequency signal environments, providing an intangible yet indestructible electrostatic protection net for various precision electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HSD05T1G(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsd05t1g-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:05:09</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is specially designed for single channel circuits, with a withstand voltage of 5V, which can effectively block electrostatic discharge and protect circuit safety. The 28A peak pulse current processing capability enhances its protective effect in transient overvoltage events. In addition, the low capacitance characteristic of 200pF ensures the non-destructive passage of high-speed signals, which is an ingenious solution to protect sensitive electronic devices from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HESDA8V2-1J(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesda8v2-1j-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:04:57</pubDate>
	<description><![CDATA[This unidirectional ESD protective diode is the ideal guardian of precision electronic devices, designed with a single channel and withstand voltage of 5V, providing reliable electrostatic protection without affecting system performance. It can withstand instantaneous surge currents of up to 28A and has a small internal resistance, ensuring efficient energy transfer. In addition, its capacitance value as low as 200 picoseconds allows for smooth and unobstructed transmission of high-frequency signals, making it particularly suitable for protecting sensitive circuits from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HAZC015-04C(SOT-363)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hazc015-04c-sot-363-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:04:45</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is equipped with a 4-channel parallel structure and is specifically designed for multi line systems. Under a working voltage of 5V, it can withstand a peak current impulse of 4A, effectively blocking static electricity damage. The low capacitance value of 0.6pF ensures the clarity and integrity of high-speed signal transmission, making it an ideal choice for protecting precision circuits and improving system stability.]]></description>
</item>
<item>
	<title><![CDATA[HSM05-TP(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsm05-tp-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:04:34</pubDate>
	<description><![CDATA[This ESD protection diode adopts a unidirectional structure and is equipped with dual channels, specifically for circuit safety protection. Stable at a working voltage of 5V, capable of handling 17A peak current, and building a solid anti-static line. The 180pF small capacitor design ensures fast and non-destructive signal transmission, making it an ideal component for anti-static precision circuits and providing meticulous protection for equipment safety.]]></description>
</item>
<item>
	<title><![CDATA[HCPDH5V0UC-HF(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcpdh5v0uc-hf-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:04:22</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is optimized for 5V voltage applications and features a sophisticated single channel design. Can withstand the impact of 4A static discharge current, providing protection for sensitive circuits. Its ultra-low capacitance value is only 0.4pF, ensuring lossless transmission of high-speed signals, and is the preferred component to protect precision electronics and high-speed data lines from electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HESDSLC3V3LB(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdslc3v3lb-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:04:10</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for 3.3V voltage applications, with a simple and efficient single channel architecture. The 4A peak pulse current processing capability builds a solid electrostatic protection barrier. In addition, with an extremely low capacitance value of 0.3pF, it ensures a pure and high-speed signal, making it a carefully selected component for maintaining the signal integrity of high-end electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HAZ4012-01L(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz4012-01l-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:03:58</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is specially designed for single line protection and can operate stably at 12V voltage. It has a peak current processing capacity of 9.6A, providing targeted electrostatic protection for circuits. Although the capacitance value is 55pF, it is still suitable for applications that do not require strict signal speed requirements, effectively ensuring circuit safety.]]></description>
</item>
<item>
	<title><![CDATA[HRLSD32A151LC(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrlsd32a151lc-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:03:47</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel circuits, with a withstand voltage of 15V and a peak current processing capacity of 10A, providing strong electrostatic protection for electronic systems. 1pF low capacitance ensures lossless transmission of high-speed signals, making it the preferred solution for anti-static in precision circuits and portable electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HRLSD32A081LC(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrlsd32a081lc-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:03:35</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially designed for single signal lines, with a withstand voltage of 8 volts and a peak current tolerance of 18 amperes, providing strong electrostatic buffering for the circuit. With a capacitance value of only 1 picosecond, ensuring high-speed data transmission without delay, it is the preferred electrostatic protection solution for high-end electronic devices and communication interfaces, adding hidden safety to the stable operation of the system.]]></description>
</item>
<item>
	<title><![CDATA[HESDALD08BCX(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdald08bcx-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:03:23</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel applications, with a withstand voltage of 8V and can withstand 18A instantaneous current shocks, providing excellent electrostatic protection for circuits. Its 1pF small capacitance ensures signal integrity, especially suitable for high-speed data lines, effectively isolating static interference, and building a solid defense line for the stable operation of precision electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[HESDSLC3V3D3B(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdslc3v3d3b-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:03:11</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed for single line optimization, with a maximum continuous operating voltage of 3.3V and low capacitance characteristics of only 1pF, maintaining signal purity and high speed while providing efficient electrostatic protection. Its 20A peak pulse current processing capability enhances the resilience of circuit boards in electrostatic discharge events, making it the preferred solution for protecting precision electronic components.]]></description>
</item>
<item>
	<title><![CDATA[HAZ5013-01H(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz5013-01h-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:02:59</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is suitable for 3.3V circuit environments and provides precise protection for a single channel. With a peak pulse current processing capability of 11.2A, it effectively resists electrostatic shocks. Although the capacitance value is 60pF, it is still suitable for low-frequency signal circuits, ensuring signal integrity while also putting on an invisible anti-static coat for your electronic devices to protect the safety of core components.]]></description>
</item>
<item>
	<title><![CDATA[HNUP2105L-AQ(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hnup2105l-aq-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:02:47</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is characterized by its dual channel configuration, which is suitable for multi line protection needs. The working voltage can reach 24V, and the peak current processing capacity is 5A, effectively resisting electrostatic impact. In addition, the low capacitance characteristic of 25pF ensures the complete transmission of high-speed signals, providing an efficient and low interference solution for electrostatic protection of precision circuits.]]></description>
</item>
<item>
	<title><![CDATA[HDESD2CAN2SOQ-7(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdesd2can2soq-7-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:02:36</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially designed with dual channels, withstand voltage of 24V, and can withstand 5A instantaneous current impact, providing solid protection for the circuit. The exquisitely designed 25 picosecond capacitance ensures smooth and unobstructed high-speed signals, making it a powerful assistant for anti-static interference in precision electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HAZ5323-01F(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz5323-01f-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:02:24</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for 3.3V voltage systems, with a sophisticated single channel design. 4A peak current absorption capacity provides a careful electrostatic protection net for the circuit. In addition, the ultra-low capacitance of only 0.3pF ensures smooth and unobstructed high-speed signals, making it an ideal component for protecting precision electronic equipment and improving system reliability.]]></description>
</item>
<item>
	<title><![CDATA[HESD5V0D5B-TP(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5v0d5b-tp-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:02:12</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode adopts a bidirectional single channel structure, with a withstand voltage of 5V, a peak current carrying capacity of 20A, and a capacitance of 33pF, ensuring strong electrostatic protection while minimizing the impact on signal transmission, providing a balanced and efficient solution for interface protection of various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HCESD523HC5VB(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd523hc5vb-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:02:00</pubDate>
	<description><![CDATA[This ESD protection diode is designed as a bidirectional single channel, with a working voltage of 5V, capable of withstanding instantaneous current surges of 20A, and has a capacitance value of 33pF. It ensures effective protection against electrostatic discharge while also ensuring the quality of signal transmission. It is the ideal choice to protect electronic devices from electrostatic damage, ensuring more stable and reliable system operation.]]></description>
</item>
<item>
	<title><![CDATA[HPESDRC2FD5VB(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdrc2fd5vb-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:01:48</pubDate>
	<description><![CDATA[This product is a bidirectional ESD protective diode designed specifically for single signal circuits. It can provide robust electrostatic protection at a working voltage of 5V, with a peak pulse current processing capacity of 4A, effectively resisting transient high-voltage shocks. The low capacitance characteristic of 0.5 picosecond ensures uninterrupted high-speed signal transmission, making it an ideal choice to protect precision electronic devices from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HPESDMC2FD5VBHF(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdmc2fd5vbhf-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:01:37</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed in both directions and is specifically designed for single channel applications. It can effectively block voltage surges below 5V, and its transient current withstand capacity can reach 4A, ensuring the safety of sensitive circuits. With a low capacitance value of only 0.5pF, it ensures signal integrity while protecting, making it particularly suitable for electronic devices with strict requirements for speed and reliability.]]></description>
</item>
<item>
	<title><![CDATA[HPESDNC3D5VBL(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdnc3d5vbl-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:01:25</pubDate>
	<description><![CDATA[We recommend this bidirectional ESD protection diode, designed specifically for a single signal line, with a withstand voltage of 5V and a peak current processing capacity of 11A, ensuring strong electrostatic protection performance. Despite having a capacitance value of 20pF, it is still an ideal choice for balancing protection and signal integrity requirements in many applications, providing electrostatic protection armor for electronic devices and improving system stability.]]></description>
</item>
<item>
	<title><![CDATA[HD5V0L1B2WS-7(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hd5v0l1b2ws-7-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:01:13</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single channel applications and can operate stably at 5V voltage. It has strong 11A peak current processing capability and provides comprehensive electrostatic protection for circuits. Although the capacitance value is 20pF, it is still suitable for signal circuits with less stringent requirements, ensuring the normal function of the equipment under electrostatic impact, and is a reliable guardian in the field of consumer electronics and other fields.]]></description>
</item>
<item>
	<title><![CDATA[HD1213A-01WSQ-7(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hd1213a-01wsq-7-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:01:01</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is specially designed for single signal lines, with a withstand voltage of 3.3V, providing efficient protection without affecting normal operating voltage. The peak current processing capability of 4A provides strong resistance to instantaneous electrostatic shocks. The small capacitance design of 0.6pF ensures the non-destructive passage of high-speed signals, making it an ideal choice for protecting precision electronic equipment and high-frequency data lines from electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HPESD5V0V1BL(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd5v0v1bl-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:00:49</pubDate>
	<description><![CDATA[This ESD diode is single channel bidirectional, with a VRWM of 5V, an IPP of 5.5A, and a capacitance as low as 10pF, making it suitable for adding safety to circuits that are particularly sensitive to static electricity. It won‘t cause any congestion in signal transmission, so it‘s safe to use.]]></description>
</item>
<item>
	<title><![CDATA[HSM15-02HTG(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsm15-02htg-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:00:37</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is equipped with dual channels and is specifically designed for high sensitivity circuits. 15V withstand voltage and 10A peak current processing capacity, achieving strong protection. In addition, with a capacitance value of only 60 picoseconds, ensuring no signal delay, especially suitable for scenarios that require high-speed data exchange, wear invisible electrostatic protective clothing for your electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HSM24B(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsm24b-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:00:26</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is bidirectional and equipped with dual channels, with a withstand voltage of 24V. Even in the event of a 5A instantaneous high current surge, it can ensure the safety of the circuit. Its compact 25pF capacitance value enables fast and non-destructive signal transmission, making it an efficient solution to protect precision circuits from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HESD9N5B(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd9n5b-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:00:14</pubDate>
	<description><![CDATA[This product is a single channel bidirectional ESD electrostatic protection diode with a rated voltage VRWM of 5 volts. It can withstand instantaneous current IPP of up to 5.5 amperes and a capacitance value of CJ as low as 10 picoseconds. It is designed to protect electronic circuits from damage caused by static discharge, ensure signal transmission quality and system stability, and is suitable for various types of electrostatic sensitive equipment.]]></description>
</item>
<item>
	<title><![CDATA[HPESDRC2XD5VBLF(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdrc2xd5vblf-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 07:00:02</pubDate>
	<description><![CDATA[This static and surge protection device (TVS/ESD) is designed to provide transient voltage suppression protection for sensitive electronic devices. It has a peak pulse current capacity IPP of 4.5A, ensuring effective diversion of excess current in the event of a surge and protecting circuit safety. Its maximum operating voltage VRMM is 5V, suitable for applications in low voltage environments. This device has a small capacitance CJ of 0.25pF, which has minimal impact on the signal and is very suitable for the protection needs of high-speed data lines or interfaces. As a 1-channel, Bi bidirectional type protective component, it can simultaneously respond to voltage changes in both positive and negative directions, ensuring the safety and stability of communication lines or internal connections of consumer electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HAZ5925-01H(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz5925-01h-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:59:50</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is a single channel device with a withstand voltage of 5V, a peak pulse current of 20A, and a capacitance of 33pF, ensuring the stability of the signal line even under high-energy electrostatic shocks. It is particularly suitable for electronic applications that require high transient protection capabilities and acceptable signal delays, effectively improving the anti-static performance of the system.]]></description>
</item>
<item>
	<title><![CDATA[HGSOT24C(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot24c-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:59:38</pubDate>
	<description><![CDATA[We introduce this unidirectional ESD electrostatic protection diode, with a dual channel design and a rated voltage of 24V. It can withstand an instantaneous electrostatic discharge current of 2A and has a low dielectric constant of 25pF, ensuring clean signal transmission. It is an ingenious work to protect precision electronic equipment from electrostatic hazards and improve the overall stability and reliability of the system.]]></description>
</item>
<item>
	<title><![CDATA[HDESD12VL2BTQ-7(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdesd12vl2btq-7-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:59:26</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is equipped with a dual channel design and operates at a VRWM of 12V. It has a powerful 20A peak current processing capability and a capacitance value of 20pF, ensuring high-quality signal transmission. It provides comprehensive and efficient electrostatic protection for various electronic devices and is the preferred component for protecting circuit safety.]]></description>
</item>
<item>
	<title><![CDATA[HSP4022-01FTG-C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsp4022-01ftg-c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:59:15</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel circuits, with a withstand voltage of 12V and the ability to withstand 12A peak instantaneous current shocks, building a strong defense line for sensitive electronic components. Its ultra-low 1pF capacitance ensures non-destructive passage of high-speed signals, making it an ideal choice for protecting precision circuits from electrostatic damage, making data transmission both fast and safe.]]></description>
</item>
<item>
	<title><![CDATA[HESDSBLC3V3LB(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdsblc3v3lb-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:59:03</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed in both directions and is specifically designed for single channel applications, effectively protecting circuits from electrostatic impacts. It has a voltage withstand voltage of 3.3V (VRWM) and can withstand up to 7A peak current (IPP) when encountering transient high voltage, ensuring the safety of sensitive components. In addition, its capacitance value (CJ) as low as 10pF ensures signal integrity, especially suitable for electronic devices with strict requirements for speed and high-frequency performance, thus achieving a perfect balance between reliable protection and efficient transmission.]]></description>
</item>
<item>
	<title><![CDATA[HESDALD05BCX(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdald05bcx-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:58:51</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed as a bidirectional type, specifically designed for single channel applications, providing a voltage protection threshold (VRWM) of 5V, effectively responding to transient current surges (IPP) of up to 4A, while also having a low capacitance value of only 1pF (CJ), ensuring signal integrity is not affected, and providing efficient and sensitive electrostatic protection solutions for precision circuits.]]></description>
</item>
<item>
	<title><![CDATA[HPESDLC2FD5VUA(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdlc2fd5vua-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:58:39</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode adopts a unidirectional design, optimized for single signal path protection. Stable operation at a working voltage of 5V, with 4A peak current absorption capacity, capable of strong resistance to electrostatic shocks. Its ultra-low capacitance value of 0.6pF ensures the non-destructive passage of high-speed signals, making it an ideal guardian of precision electronic equipment and high-frequency communication circuits, effectively improving the anti-static performance of the system.]]></description>
</item>
<item>
	<title><![CDATA[HCESDBLC5V0D5(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesdblc5v0d5-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:58:28</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is a bidirectional single channel configuration, with a working voltage of 5V, capable of withstanding 8A instantaneous pulse current, and a capacitance value of only 10pF, ensuring no delay transmission of high-speed signals. As the electrostatic guardian of circuits, it can provide comprehensive electrostatic protection for electronic devices and reinforce system protection barriers without affecting signal quality.]]></description>
</item>
<item>
	<title><![CDATA[HAZ9585-01F(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz9585-01f-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:58:16</pubDate>
	<description><![CDATA[This product is a high-performance ESD electrostatic protection diode with a bidirectional structure designed specifically for single channel circuits. It can operate stably at a voltage of 5V and has a strong 20A instantaneous current withstand capacity, providing reliable protection for the circuit. A small capacitance value of 40pF ensures complete signal transmission, especially suitable for high-speed data lines, effectively blocking electrostatic interference and building a strong protective wall for sensitive components of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HPESDUC2FD3V3B(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesduc2fd3v3b-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:58:04</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for a 3.3V voltage environment, with a compact and efficient single channel structure. 4A peak current processing capability, equipped with invisible anti-static armor for circuit boards. The ultra-low capacitance value of 0.3pF ensures fast and non-destructive signal transmission, making it an exquisite choice for ensuring the safety of high-frequency data lines and microelectronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[HSD05-01FTG(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsd05-01ftg-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:57:52</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode focuses on precise protection of a single channel, with excellent performance at a working voltage of 5V and a peak current processing capacity of up to 28A, building a strong anti-static barrier for the circuit. Although the capacitance value is 200pF, it is more suitable for applications that are less sensitive to signal delay, ensuring the reliability and safety of equipment under high-energy electrostatic shocks.]]></description>
</item>
<item>
	<title><![CDATA[HPESDNC5D5VU(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdnc5d5vu-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:57:40</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed specifically for a single signal line, with a working voltage of 5V and the ability to withstand strong instantaneous current surges of 9.4A. It has a capacitance value of 80pF and is suitable for electrostatic protection scenarios where signal transmission rate requirements are not strict. It provides strong transient voltage suppression protection for electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HBV05C-H(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hbv05c-h-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:57:29</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed as a single channel, with a voltage resistance of 5V, providing comprehensive electrostatic protection. 4A peak current processing capability ensures the safety of the circuit under high voltage shocks. The 1pF low capacitance design reduces signal attenuation and perfectly matches high-speed data transmission applications, making it an efficient solution for protecting electronic devices and maintaining system stability.]]></description>
</item>
<item>
	<title><![CDATA[HCESD923NC5VB(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd923nc5vb-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:57:17</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single signal protection and has a 5V voltage withstand capability (VRWM). It provides 9A peak current protection (IPP) while ensuring the safety of low-voltage systems, effectively blocking static electricity intrusion. Its 15pF low capacitance characteristic (CJ) ensures uninterrupted signal transmission, making it particularly suitable for high-speed data interfaces and precision circuit applications, adding an invisible and resilient barrier to electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HSZESD7951ST5G(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hszesd7951st5g-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:57:05</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for a single signal path, with a working voltage of 5V and the ability to withstand 3A instantaneous current shocks, achieving bidirectional electrostatic protection. The low capacitance characteristic of 0.8pF ensures complete and fast signal transmission, making it an efficient solution to protect highly sensitive electronic devices such as mobile communication and data lines from electrostatic interference, enhancing system stability and reliability.]]></description>
</item>
<item>
	<title><![CDATA[HESDLC5V0D9L-TP(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdlc5v0d9l-tp-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:56:53</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed specifically for unidirectional circuits and is equipped with excellent electrostatic protection performance. It can operate stably at a working voltage of 5V and has the ability to handle peak pulse currents of 4A, effectively resisting transient high-voltage shocks. Its low capacitance value is only 0.5pF, ensuring high-speed signal transmission without interference, making it very suitable for protecting sensitive components in precision electronic equipment, maintaining system stability and data integrity.]]></description>
</item>
<item>
	<title><![CDATA[HLESD5Z5.0C-H(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hlesd5z5-0c-h-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:56:41</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single signal protection, with a withstand voltage of 5V and a capacity to withstand 8A instantaneous current. Its capacitance value as low as 10pF ensures the integrity of the signal without damage. It is like an invisible guardian of electronic devices, with double-sided defense against static electricity invasion, providing solid protection for sensitive circuits, improving the reliability of system operation and data security.]]></description>
</item>
<item>
	<title><![CDATA[H824001(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/h824001-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:56:29</pubDate>
	<description><![CDATA[Introducing this high-performance ESD protection device, with a unidirectional design and four channels, suitable for multi line protection. It operates stably at a voltage of 5V and has the ability to handle 4A peak current, effectively resisting electrostatic shocks. In addition, with a low capacitance value of only 0.5pF, it ensures non-destructive signal transmission and is particularly suitable for electronic applications that require strict signal integrity. Wear invisible electrostatic protective clothing for your equipment.]]></description>
</item>
<item>
	<title><![CDATA[HCPDV12V0-HF(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcpdv12v0-hf-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:56:17</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode adopts a bidirectional design, specifically designed for single channel electronic devices. It can operate stably at a working voltage of 12V, providing efficient electrostatic protection. With a peak pulse current processing capability of 12A, it can effectively withstand transient high-voltage shocks and ensure circuit safety. Its low capacitance value of 1pF ensures high-speed signal transmission without interference, making it very suitable for precision electronic products that have strict requirements for signal integrity.]]></description>
</item>
<item>
	<title><![CDATA[HAZ5123-01F(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz5123-01f-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:56:06</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is bidirectional and designed for single channel applications. It can withstand the highest operating voltage of 3.3V (VRWM) and has the ability to withstand 9A peak transient current (IPP), ensuring reliable safety protection. It has a low capacitance value (CJ) of 15 picoseconds, which helps reduce signal attenuation and is suitable for high-speed data lines, effectively balancing protection effectiveness and signal integrity.]]></description>
</item>
<item>
	<title><![CDATA[HPJSD05CTS(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjsd05cts-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:55:54</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed as a single channel, with a withstand voltage of 5V, suitable for electrostatic protection in a wider voltage range. The 9A peak pulse current processing capability provides a solid guarantee for the circuit board. A capacitance value of 15pF ensures signal integrity while effectively preventing electrostatic damage, making it the preferred solution to protect various electronic devices from the impact of static electricity.]]></description>
</item>
<item>
	<title><![CDATA[HCEST23NC24VU(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcest23nc24vu-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:55:42</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is specially designed with dual channels and is specifically designed for 24V systems. It can effectively cope with 2A instantaneous current shocks, and the 25pF capacitor ensures the purity of signal transmission. It is a selected component to protect circuit components from electrostatic damage, providing a stable and reliable protective layer for high-sensitivity electronic applications.]]></description>
</item>
<item>
	<title><![CDATA[HBV-D505ZC(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hbv-d505zc-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:55:30</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is a single channel device with a working voltage VRWM of 5V, capable of withstanding 8A peak current impulse, and has a low capacitance characteristic of 10pF, ensuring clear transmission of high-speed signals. It provides two-way electrostatic protection for electronic devices, like a precise shield, silently guarding circuit boards from electrostatic damage, enhancing system stability and data security.]]></description>
</item>
<item>
	<title><![CDATA[HSELC03CI(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hselc03ci-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:55:18</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially designed for 3.3V circuits, with a single channel design supporting bidirectional protection and a 17A high transient current withstand capacity, providing an indestructible electrostatic barrier for sensitive electronic components. Its ultra-low 1pF capacitance value ensures complete and non-destructive signal transmission, making it an ideal electrostatic protection component for high-end digital circuits and communication interfaces, even for high-speed data transmission.]]></description>
</item>
<item>
	<title><![CDATA[HCPDV8V0-HF(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcpdv8v0-hf-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:55:07</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is the electrostatic protector of a single channel circuit, with a working voltage of 8V and the ability to withstand 18A peak current shocks, providing a solid electrostatic barrier for the circuit. The 1pF low capacitance design ensures smooth and non-destructive high-speed signals, making it an ideal choice for protecting sensitive electronic devices, improving system stability and reliability, and making data transmission more secure.]]></description>
</item>
<item>
	<title><![CDATA[HGSOT15C-E3-08(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot15c-e3-08-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:54:55</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode adopts a unidirectional design and has dual protection function, suitable for multi port applications. It operates continuously at a voltage of 15V and can withstand 10A instantaneous current shocks to ensure system stability. Low capacitance 60pF, reduces signal attenuation, ensures complete transmission of high-frequency signals, and provides efficient and compact electrostatic protection solutions for precision electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[HAZ9565-01F(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz9565-01f-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:54:43</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially designed for single channel applications. It is stable and reliable at a working voltage of 5V and can withstand 4A instantaneous current shocks, providing rigorous electrostatic protection for circuits. Its capacitance value is only 0.5pF, which minimizes signal attenuation and ensures non-destructive transmission of high-speed signals. It is an efficient solution for protecting sensitive electronic devices and improving system signal quality.]]></description>
</item>
<item>
	<title><![CDATA[HESD9N5BU(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd9n5bu-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:54:31</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is specially designed for single signal lines and is stable and reliable under a maximum continuous working voltage of 5V. Faced with electrostatic impact, it can withstand a peak current of 4A to ensure circuit safety. Its capacitance value is as low as 0.6pF, which has minimal impact on signal transmission quality. It is the preferred component for protecting high-performance electronic devices from electrostatic interference, improving system stability and data security.]]></description>
</item>
<item>
	<title><![CDATA[HPESDMC2XD5VB(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdmc2xd5vb-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:54:20</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is designed with a bidirectional single channel and operates stably at 5V voltage. It has the ability to absorb 4A peak current and effectively block electrostatic shocks. Its low capacitance value of 0.55pF ensures the non-destructive passage of high-speed signals, making it an ingenious solution for protecting fragile circuit components and maintaining system stability, suitable for various electrostatic sensitive electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HPESDLC2FD3V3BH(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdlc2fd3v3bh-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:54:08</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for low voltage applications, with a voltage withstand of 3.3V and a single channel construction to meet various circuit requirements. 4A peak current processing performance, wear electrostatic protective clothing for your device. In addition, the ultra-low capacitance value of 0.3pF ensures smooth and unobstructed signals, making it an ideal companion for high-speed data interfaces and anti-static sensitive circuits.]]></description>
</item>
<item>
	<title><![CDATA[HPESDNC2FD5VBS(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdnc2fd5vbs-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:53:56</pubDate>
	<description><![CDATA[This device is a single channel bidirectional ESD protective diode with a rated voltage VRWM of 5V, capable of withstanding a peak transient current IPP of 5.5A, and has a low capacitance value of 10pF CJ. It is suitable for protecting circuits sensitive to static electricity, ensuring that it can effectively block static impact in high-frequency signal lines without affecting signal integrity.]]></description>
</item>
<item>
	<title><![CDATA[HESDLC8V0D3B(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdlc8v0d3b-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:53:44</pubDate>
	<description><![CDATA[This high-performance bidirectional ESD electrostatic protection diode is specially designed for single channel circuits, with a withstand voltage of 8V and the ability to withstand transient current surges of up to 18A, providing electrostatic protection clothing for circuit boards. The low capacitance design of 1pF ensures the high-speed transmission of signals without obstruction, making it a powerful assistant for electrostatic protection of highly sensitive components in modern electronic devices, ensuring signal purity and system stability.]]></description>
</item>
<item>
	<title><![CDATA[HMDFN2C051US(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hmdfn2c051us-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:53:32</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single signal protection, with a withstand voltage of 5V and a transient current withstand capacity of 4A, providing a strong electrostatic protection net for circuit boards. 0.5pF ultra-low capacitance value ensures signal transmission without interference, high speed and clarity. It is the preferred component for precision electronic equipment and high-speed data lines to prevent electrostatic interference, enhancing the overall performance of the system.]]></description>
</item>
<item>
	<title><![CDATA[HSM36-02HTG(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsm36-02htg-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:53:21</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed with dual channels, withstand voltage of 36V, peak current of 5A, and is equipped with invisible anti-static armor for circuit boards. 35pF low capacitance ensures smooth and unobstructed high-speed signals, making it the preferred component for electrostatic protection in precision electronics and portable devices, silently safeguarding the stability and safety of electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[HSDD32C18L01-AT(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsdd32c18l01-at-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:53:09</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single signal lines, with a working voltage of up to 18V, which can effectively resist the impact of bidirectional electrostatic discharge. The peak current IPP is 9A, providing strong protection efficiency. The compact 30 picosecond capacitance ensures high-speed data transmission without delay, making it particularly suitable for portable electronic devices and communication systems that require high-speed signal integrity and bidirectional protection. It is an ideal component for improving system robustness.]]></description>
</item>
<item>
	<title><![CDATA[HD12V0L1B2LP-7B(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hd12v0l1b2lp-7b-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:52:57</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed for a single channel configuration, with a withstand voltage of 12V and the ability to handle 5A peak pulse currents, constructing a stable electrostatic protection barrier. Although the capacitance value is 10pF, it is still suitable for applications with low sensitivity to capacitance, ensuring the safety of the circuit in the face of electrostatic shocks, and is an ideal choice to improve the robustness of electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[HCESD523NC3V3B(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd523nc3v3b-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:52:45</pubDate>
	<description><![CDATA[This bidirectional ESD protective diode is designed as a single channel, suitable for a 3.3V voltage environment, with a capacitance of 15pF to ensure both signal transmission and protection. With a peak current processing power of 9A, it effectively resists static electricity threats by wearing electrostatic protective clothing on circuit boards. It is a powerful assistant for protecting sensitive components in consumer electronics and communication equipment.]]></description>
</item>
<item>
	<title><![CDATA[HRLSD32A121C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrlsd32a121c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:52:33</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel applications, with a withstand voltage of 12V, ensuring circuit safety even in high voltage environments. With the processing ability of 11A peak pulse current, it can effectively block electrostatic discharge and protect sensitive electronic components. Its low capacitance characteristic of 38 picoseconds maintains high-speed signal transmission without fear of signal attenuation, making it an ideal choice for consumer electronics and communication devices pursuing high performance and reliable electrostatic protection.]]></description>
</item>
<item>
	<title><![CDATA[HPESD12VS1ULD(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd12vs1uld-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:52:21</pubDate>
	<description><![CDATA[This single channel unidirectional ESD electrostatic protection diode has a rated voltage of 12V and can effectively withstand 4A transient current shocks, providing stable protection for circuit safety. A capacitance value of 28pF provides comprehensive electrostatic protection for equipment while ensuring signal transmission quality, making it a suitable electrostatic solution for various electronic devices and data lines.]]></description>
</item>
<item>
	<title><![CDATA[HESD7V0D5(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd7v0d5-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:52:10</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is designed for a voltage level of 7V and is suitable for electrostatic protection in single channel circuits. It can withstand a peak current impulse of 7A, ensuring the safety of the circuit. Although the capacitance value is 60pF, it can still effectively balance the requirements of electrostatic protection and signal integrity for non high-speed signal transmission, adding a reliable layer of electrostatic protection for various electronic applications.]]></description>
</item>
<item>
	<title><![CDATA[HDESD5V0U1BL-7B(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdesd5v0u1bl-7b-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:51:58</pubDate>
	<description><![CDATA[This bidirectional ESD protective diode is optimized for a single signal line, with a withstand voltage of 5V and a processing capacity of 2.5A peak pulse current, building an electrostatic protection barrier for sensitive circuits. Its compact 2.5pF capacitance ensures lossless transmission of high-speed signals, making it an ideal component for electrostatic protection in modern high-performance electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HCESD1006UC5VB-M(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd1006uc5vb-m-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:51:46</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is specially customized for single channel circuits, with a working voltage of VRWM of 5V, capable of withstanding 4A peak current shocks, effectively blocking the harm caused by static discharge. Its compact 0.6pF capacitance ensures unobstructed high-speed signal transmission, making it a clever solution for protecting sensitive components of electronic devices and improving system reliability.]]></description>
</item>
<item>
	<title><![CDATA[HSM36T1G(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsm36t1g-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:51:34</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode has a dual channel structure and can operate stably at 36V voltage. Its 5A peak current processing ability ensures that the circuit is not damaged by electrostatic shocks. Its small capacitance design of 35 picoseconds minimizes signal interference and is an ideal component for protecting highly sensitive electronic applications, ensuring the purity and safety of data transmission.]]></description>
</item>
<item>
	<title><![CDATA[HT3V3S5-7(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/ht3v3s5-7-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:51:22</pubDate>
	<description><![CDATA[A unidirectional ESD protective diode specially designed for precision circuits, with only one channel and a working voltage of 3.3V, capable of withstanding 11.2A peak current shocks, ensuring circuit safety. With a capacitance value as low as 130pF, it reduces signal delay, adapts to high-speed signal transmission lines, and provides invisible and powerful electrostatic protection shield for your electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HPESDNC2XD5VBL(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdnc2xd5vbl-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:51:11</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is a bidirectional single channel configuration with a rated voltage of 5V, capable of withstanding 9A instantaneous high current shocks, providing strong electrostatic protection for low voltage applications. The capacitance value of 15pF is suitable for non high-speed signal lines, ensuring basic signal transmission quality while providing necessary electrostatic safety protection for equipment. It is the preferred anti-static component for consumer electronics and low-speed communication interfaces.]]></description>
</item>
<item>
	<title><![CDATA[HCESD523LC5VB(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd523lc5vb-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:50:59</pubDate>
	<description><![CDATA[This product is a bidirectional ESD protective diode designed specifically for a single signal line, with a working voltage withstand value of 5V, which can effectively withstand instantaneous current surges of up to 2.5A, ensuring circuit safety. Its compact 3pF capacitance value is conducive to high-speed signal transmission, making it an ideal choice for protecting precision electronic devices from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HAZ1013-04F(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz1013-04f-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:50:47</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed for multi-channel use and is equipped with four independent protection circuits. The working voltage VRWM is 3.3V, and each channel can withstand a peak current impulse of 4A, providing precise electrostatic protection for the circuit. The low capacitance value of 0.6pF ensures that high-speed signal transmission is not affected, making it an efficient solution to protect modern digital circuits, mobile devices, and high-speed data ports from electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HESD5481MUT5G(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5481mut5g-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:50:35</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for a 5V voltage platform, with a single channel structure that can withstand 9A instantaneous current shocks, providing comprehensive electrostatic protection for sensitive components on the circuit board. Although the capacitance value of 15pF is slightly higher, it is suitable for low-speed signal lines and does not affect signal transmission in daily use. It is an economical and efficient solution to ensure the safe operation of electronic devices in static electricity prone environments.]]></description>
</item>
<item>
	<title><![CDATA[HCESD882UC5VU(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd882uc5vu-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:50:23</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed for advanced protection on single channel circuits. It can operate continuously at a voltage of 5 volts and withstand an instantaneous current of up to 4 amperes when facing electrostatic shocks, ensuring the safety of the circuit. In addition, with a low capacitance value of only 0.6 picoseconds, high-frequency signal transmission is almost unaffected, making it an ideal choice for protecting precision electronic equipment from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HPT05D3CE(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpt05d3ce-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:50:11</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is suitable for single lines, with a withstand voltage of 5V, and can effectively cope with a wider range of voltage fluctuations. It has the ability to handle 25A peak pulse current, providing stronger transient protection for the circuit. Although the capacitance value is 65pF, it still ensures the stability of signal transmission in most applications and is the preferred device to improve the electrostatic protection level of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HRLSD32A031LC(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrlsd32a031lc-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:50:00</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially designed for single channel, with a withstand voltage of 5V, achieving bidirectional electrostatic transient protection. 4A peak current processing capability provides stable protection for sensitive circuits. A 1pF low capacitance value ensures complete transmission of high-speed signals, making it an ideal component for protecting precision electronic equipment and enhancing system robustness.]]></description>
</item>
<item>
	<title><![CDATA[HCPDV5V0-HF(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcpdv5v0-hf-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:49:48</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single channel circuit protection, with a withstand voltage of 5V, and can effectively intercept bidirectional electrostatic discharge. The 4A peak current processing capability provides a powerful protective barrier for the circuit. The low capacitance characteristic of 1pF ensures high-speed signal transmission without delay, making it the preferred component for anti-static interference in precision electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[HESD9B5VDA(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd9b5vda-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:49:36</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed for single channel circuit protection, and its 5V working voltage VRWM is suitable for most low-voltage application scenarios. The peak current IPP processing capacity of 9A provides equipment with electrostatic protection armor, effectively resisting transient high-voltage impacts. The 15pF low capacitance CJ design ensures lossless signal transmission and is the preferred guardian for high-speed data lines and sensitive electronic devices, enhancing overall system robustness.]]></description>
</item>
<item>
	<title><![CDATA[HD5V0L1B2S9-7(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hd5v0l1b2s9-7-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:49:24</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel circuits, with a voltage rating of VRWM of 5V, providing balanced bidirectional electrostatic protection. The 9A peak pulse current IPP processing capability ensures stable operation of the circuit in harsh environments. A small capacitance CJ value of 15pF reduces signal interference, is suitable for high-speed signal lines, improves data transmission quality, and is an ideal solution for electrostatic protection of precision electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[HDT1446-04TS-7(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdt1446-04ts-7-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:49:13</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is equipped with a 4-channel design and is specially customized for sensitive electronic devices. The working voltage VRWM is 5V and can withstand a maximum instantaneous pulse current impulse of 4A, ensuring stable system operation. Its outstanding 0.5pF low capacitance characteristic ensures high-speed and pure signal transmission, making it an ideal choice for protecting precision circuits from electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HPESDNC23T5VU(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdnc23t5vu-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:49:01</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode adopts unidirectional technology and is configured with dual channels, specifically optimized for electrostatic protection of electronic devices. 5V maximum continuous working voltage, 17A peak pulse current processing ability, strong resistance to transient high voltage, ensuring stable system operation. The 180pF low capacitance characteristic ensures high-speed signal transmission without interference, making it an ideal choice for modern electronic devices to resist electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HL35L3V3CB2(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hl35l3v3cb2-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:48:49</pubDate>
	<description><![CDATA[This product is a high-performance bidirectional ESD electrostatic protection diode designed specifically for a single signal line. It can operate stably under a continuous working voltage of 3.3V and has a peak current absorption capacity of 20A, providing strong transient voltage protection for the equipment. Its ultra-low 1pF capacitance ensures uninterrupted high-speed signal transmission, making it an ideal choice for ensuring the safety of precision electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[HAOZ8905CI(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haoz8905ci-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:48:37</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed specifically for precision circuits and adopts unidirectional protection technology. It is equipped with 4 channels and can provide stable protection at a working voltage of 5V. Its peak pulse current can reach 4A, ensuring high reliability under electrostatic impact. A capacitance value as low as 0.5pF ensures signal integrity, especially suitable for high-speed data lines, effectively preventing damage caused by transient voltage, and providing comprehensive electrostatic protection solutions for your electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HPESDNC2FD3V3BS(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdnc2fd3v3bs-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:48:25</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for 3.3V voltage applications, with a single channel structure. 7A peak current absorption, forming a strong electrostatic protection net. The 10pF capacitance value balances the needs of protection and signal transmission, ensuring that the circuit is both safe and efficient in the face of electrostatic challenges, making it an ideal component for precision circuit protection.]]></description>
</item>
<item>
	<title><![CDATA[HAQ24CANA-02HTG(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haq24cana-02htg-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:48:14</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is equipped with a dual channel design and can operate stably at 24V voltage, providing 5A peak current protection and effectively blocking electrostatic discharge shocks. Its 25 picosecond capacitance value is small, reducing signal attenuation, and is suitable for various precision electronic fields, providing invisible anti-static clothing for equipment.]]></description>
</item>
<item>
	<title><![CDATA[HCESD5V0D5(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd5v0d5-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:48:02</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is specially designed for single channel circuits, with a withstand voltage of 5V, capable of effectively carrying 9.4A instantaneous high current, and has an 80pF capacitance value. It is suitable for electrostatic protection in low frequency or low signal rate environments, adding a strong defense line to electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[HESD7551N2T5G(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd7551n2t5g-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:47:50</pubDate>
	<description><![CDATA[This product is a bidirectional ESD electrostatic protection diode designed for single line configuration, with a voltage resistance of 3.3V, suitable for low-power electronic devices. The 4A peak pulse current processing capability adds a stable electrostatic protective cover to the circuit. In addition, with an ultra-low capacitance of only 0.3pF, it ensures signal integrity and smooth high-speed transmission, making it the preferred device for modern precision circuits to resist electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HDESD1CAN2SOQ-7(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdesd1can2soq-7-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:47:38</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is specially designed with dual channels and is designed for a 24V voltage level. It has a 4A instantaneous current processing capability and a low capacitance value of 10pF. It ensures the effectiveness of bidirectional electrostatic protection while maintaining high fidelity signal transmission, making it a powerful assistant for protecting electronic circuits in high-voltage applications and enhancing the system‘s ability to resist electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HESD5481MUT3G(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5481mut3g-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:47:26</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is specially customized for single channel 5V systems and has a 9A peak current processing capability, providing a solid electrostatic protection wall for circuits. Although the capacitance value is 15pF, it is suitable for environments with less demanding speed requirements, effectively balancing protection efficiency and cost. It is an ideal choice for preventing electrostatic damage in many consumer electronics and general circuit applications, ensuring long-term stable operation of equipment.]]></description>
</item>
<item>
	<title><![CDATA[HAOZ8S204BLS-05(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haoz8s204bls-05-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:47:15</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is suitable for single circuit, with a maximum continuous working voltage of 5V and a processing capacity of 4A peak pulse current, forming a solid electrostatic protection network. The small capacitance characteristic of 0.55pF ensures high-speed and clear signal transmission, making it an ideal choice for protecting electronic devices from electrostatic damage, especially suitable for applications with high requirements for signal integrity.]]></description>
</item>
<item>
	<title><![CDATA[HESD24VS2UE6327(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd24vs2ue6327-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:47:03</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is equipped with dual channels and designed specifically for 24V circuits. It can withstand 2A peak transient current shocks and has a capacitance value of 25pF. It is suitable for application scenarios that require maintaining signal purity while protecting the circuit. It provides precise and effective electrostatic protection solutions for electronic devices, ensuring stable system operation.]]></description>
</item>
<item>
	<title><![CDATA[HESD5431N(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5431n-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:46:51</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is optimized for 3.3V voltage systems and adopts a single channel design. Equipped with a peak current processing capability of 7A, providing a higher level of electrostatic protection shield for circuit boards. A capacitance value of 10pF ensures efficient protection while also considering signal integrity, making it a reliable partner for anti-static interference in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HUCD32C08L01(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hucd32c08l01-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:46:39</pubDate>
	<description><![CDATA[This bidirectional ESD protective diode is specially designed for single channel circuits and has the ability to handle a maximum working voltage of 8V and a peak pulse current of 18A, effectively blocking electrostatic shocks. Its 1pF ultra-low capacitance characteristic ensures lossless transmission of high-speed signals, making it the preferred electrostatic protection for precision electronics and high-speed data interfaces, providing a stable and invisible barrier for safe equipment operation.]]></description>
</item>
<item>
	<title><![CDATA[HRCLAMP0521Z(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrclamp0521z-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:46:27</pubDate>
	<description><![CDATA[This product is a bidirectional ESD protective diode designed specifically for single signal circuits, with a withstand voltage of 5V and a peak pulse current of 4A, providing robust protection in various electrostatic environments. Its capacitance value is only 0.55pF, ensuring smooth high-speed signal transmission, making it very suitable for protecting sensitive components in precision electronic equipment without affecting data transmission speed and quality.]]></description>
</item>
<item>
	<title><![CDATA[HAQ36-02HTG(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haq36-02htg-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:46:15</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode adopts unidirectional technology and is configured with dual channels, with a withstand voltage of up to 36V. It can effectively absorb 5A peak pulse current and provide solid electrostatic protection for electronic devices. Its 35 picosecond low capacitance characteristic ensures non-destructive passage of high-speed signals, making it the preferred solution for protecting sensitive circuits and improving system electromagnetic compatibility.]]></description>
</item>
<item>
	<title><![CDATA[HPSOT15C-LF-T7(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpsot15c-lf-t7-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:46:04</pubDate>
	<description><![CDATA[This unidirectional ESD protective diode is equipped with a dual channel design, which can operate stably at a working voltage of 15V, effectively absorbing transient currents up to 10A, and resisting electrostatic shocks for electronic circuits. Its compact 60pF capacitance ensures high-speed and clear signal transmission, making it an ideal choice for protecting various precision electronic devices from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HAZ1045-04SU(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz1045-04su-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:45:52</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode, with an innovative four channel structure, focuses on the field of 5V voltage protection. Each channel can withstand 4A instantaneous current impact, with a capacitance as small as 0.5pF, greatly improving the purity of signal transmission. It is the preferred solution for multi port electronic devices to prevent electrostatic interference, building a strong defense line for circuit safety.]]></description>
</item>
<item>
	<title><![CDATA[HPESDUC3FD5VU(DFN1006-3L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesduc3fd5vu-dfn1006-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:45:40</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is unique in its dual channel design, with a voltage protection level of 5V per channel, which can effectively block static electricity hazards. The peak current processing capability of 3A, combined with an ultra-low capacitance value of only 0.45pF, ensures complete and non-destructive signal transmission at high speed. It is the preferred component for preventing electrostatic interference in miniaturization and high-frequency applications, providing stable operation protection for electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HCESD882NC12VU(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd882nc12vu-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:45:29</pubDate>
	<description><![CDATA[This single channel unidirectional ESD protection diode is designed specifically for 12V voltage platforms and can withstand 4A electrostatic surge current, providing reliable protection for circuits. The 28pF capacitance value balances protection and signal integrity, making it particularly suitable for medium speed interface and circuit applications that require robust electrostatic protection without sacrificing data transmission speed. It is an ideal component for electrostatic solutions in electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HESDSLC5V0LB(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdslc5v0lb-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:45:17</pubDate>
	<description><![CDATA[The ESD protection diode is a bidirectional single channel configuration, with a withstand voltage of 5V and 4A peak current processing performance, providing a powerful shield for the circuit to resist static electricity threats. The 0.5pF low capacitance design ensures smooth and unobstructed signals, making it a preferred component for protecting precision circuits and promoting high-speed data transmission, enhancing the overall protection efficiency of the system.]]></description>
</item>
<item>
	<title><![CDATA[HSPD9112W-2/TR(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hspd9112w-2-tr-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:45:05</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode focuses on single channel circuit protection, with the ability to withstand 12V and 12A peak current processing, providing a stable electrostatic protection network for electronic devices. In addition, the 1pF low capacitance design ensures high-speed and non-destructive signal transmission, making it a reliable electrostatic protection partner for precision circuits and high-speed data interfaces, providing a solid support for system stability.]]></description>
</item>
<item>
	<title><![CDATA[HESD5621W15-2/TR(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5621w15-2-tr-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:44:53</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed specifically for precision circuits and adopts unidirectional protection technology. It is configured with a single channel and can operate stably at a working voltage of 15V. Its peak current processing capacity reaches 60A, which can effectively withstand transient high-voltage shocks and ensure system safety. With a capacitance value of 330 picoseconds, ensuring uninterrupted high-speed signal transmission, it is particularly suitable for electronic devices that require high signal integrity, providing efficient and robust electrostatic protection solutions for your circuits.]]></description>
</item>
<item>
	<title><![CDATA[HPESDNC2FD24VB(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdnc2fd24vb-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:44:41</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel applications, with a 24V high voltage VRWM that can withstand 5A instantaneous current surges, providing solid protection for the circuit. A capacitance value of 10pF ensures protection without affecting signal transmission speed, making it particularly suitable for electronic devices that require high voltage protection without sacrificing data transmission efficiency. It is an ideal component for balancing protection level and signal quality.]]></description>
</item>
<item>
	<title><![CDATA[HESD5451XZ(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5451xz-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:44:29</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed for single channel circuits with a voltage level of 5V, capable of withstanding transient current surges of up to 9A, providing excellent electrostatic protection. Although the capacitance value is relatively high, at 15pF, it is still suitable for application scenarios that do not pursue extreme high-speed transmission, ensuring stable operation of circuits in environments with electrostatic threats, and is an ideal component for electrostatic protection in many electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HSP4023-01FTG-C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsp4023-01ftg-c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:44:18</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is a bidirectional single channel type with a working voltage of 15V and can withstand 10A instantaneous current shocks, providing solid protection for electronic circuits. The 1pF low capacitance design ensures fast signal transmission without attenuation, making it the preferred component for protecting precision electronic devices from electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HPESDNC5D3V3U(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdnc5d3v3u-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:44:06</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is the ideal guardian of precision electronic devices, with a single channel construction designed specifically for 3.3V voltage systems, capable of withstanding up to 11.2A instantaneous electrostatic shocks, ensuring stable system operation. Its compact 130 picosecond capacitance value reduces the impact on signal transmission and is very suitable for the electrostatic protection needs of high-speed data lines, providing both sophisticated and powerful defense solutions for sensitive circuits.]]></description>
</item>
<item>
	<title><![CDATA[HESD3V3D5-TP(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd3v3d5-tp-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:43:54</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed specifically for precision circuits, with a single channel configuration and a working voltage VRWM of 3.3V, which can effectively respond to transient high voltage events. Its peak current processing capacity reaches 11.2A, ensuring the stability and safety of the circuit in the event of electrostatic discharge. In addition, the device has a low capacitance value of 130pF, which helps reduce signal attenuation and is particularly suitable for electrostatic protection in high-frequency or data transmission sensitive applications, providing efficient and reliable protection barriers for your electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HESD9D5.0ST5G(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd9d5-0st5g-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:43:42</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single channel circuits, with a withstand voltage of 5V and bidirectional protection. It can effectively absorb transient currents up to 3A, providing double protection for sensitive electronic components. Its capacitance value is 0.8pF, ensuring that signal transmission is almost unaffected, especially suitable for high-precision circuits with speed requirements, providing invisible electrostatic protection shields for portable electronic devices, communication systems, etc.]]></description>
</item>
<item>
	<title><![CDATA[HPESDUC9D5VU(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesduc9d5vu-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:43:31</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is specially designed for single circuits, with a withstand voltage of 5V and the ability to withstand 4A transient current shocks. It has an ultra-low 0.5pF capacitance value, ensuring no delay in high-speed signals and providing an invisible yet powerful electrostatic protection shield for your precision circuits, enhancing system stability and data safety.]]></description>
</item>
<item>
	<title><![CDATA[HPESD5V0L1BSF(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd5v0l1bsf-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:43:19</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for low voltage applications, with a withstand voltage of 5V and a 9A high current impulse resistance, providing strong protection for single channel devices. Although the capacitance value is 15pF, it can still effectively block static discharge noise in compatible low-speed signal circuits, ensuring safe and stable operation of the circuit. It is a reliable partner for electrostatic protection in consumer electronics and low-voltage systems.]]></description>
</item>
<item>
	<title><![CDATA[HUCD32C05L01-AT(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hucd32c05l01-at-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:43:07</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is optimized for single signal protection, with a working voltage of up to 5V, which can fully cover the requirements of bidirectional electrostatic protection. 4A peak current withstand capacity, providing a solid electrostatic protective cover for the circuit board. The 1pF low capacitance design ensures non-destructive passage of high-speed signals, making it the preferred electrostatic protection solution for precision electronics and high-speed data interfaces.]]></description>
</item>
<item>
	<title><![CDATA[HPESDSC2FD5VU(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdsc2fd5vu-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:42:55</pubDate>
	<description><![CDATA[The ESD protection diode is unidirectional and designed specifically for a single signal line. It can operate stably at a working voltage of 5V, providing 4A peak current protection and effectively intercepting electrostatic discharge events. Its small capacitance characteristic of 0.6pF ensures high-speed signal integrity, making it very suitable for protecting precision circuits, avoiding damage caused by instantaneous electrostatic shocks, and ensuring equipment stability and safety.]]></description>
</item>
<item>
	<title><![CDATA[HAZ5525-01F(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz5525-01f-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:42:44</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is specially designed for single signal lines, with a maximum continuous working voltage of 5V and a processing capacity of 20A peak pulse current, forming a solid electrostatic protection line. The 40 picosecond low capacitance characteristic ensures that high-speed signals pass through without delay, providing efficient and delicate electrostatic protection solutions for various precision electronic devices, and enhancing the system‘s anti-interference performance.]]></description>
</item>
<item>
	<title><![CDATA[HSET23A15L02(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hset23a15l02-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:42:32</pubDate>
	<description><![CDATA[The carefully crafted unidirectional ESD electrostatic protection diode provides dual channel comprehensive protection for your electronic devices. The maximum continuous working voltage of 15V and the withstand capacity of 10A peak instantaneous current build an indestructible anti-static line. The compact design incorporates a capacitance value of 60 picosecond, ensuring pure and non-destructive signals. Even for interference sensitive applications, it can handle them freely, providing protection for high-speed data transmission.]]></description>
</item>
<item>
	<title><![CDATA[HESD5B5VL(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5b5vl-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:42:20</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed as a bidirectional type, specifically designed for single channel applications, providing a voltage protection threshold of 5V. It can withstand transient peak currents of up to 2.5A, ensuring that sensitive circuits are protected from electrostatic shocks. Its low capacitance value, only 3pF, ensures high-speed signal integrity and is very suitable for electronic devices that require efficient protection and critical signal transmission rates.]]></description>
</item>
<item>
	<title><![CDATA[HPDT5301-T73(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpdt5301-t73-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:42:08</pubDate>
	<description><![CDATA[This high-performance unidirectional ESD electrostatic protection diode is equipped with a dual channel design and is specially customized for 12V voltage systems. With the powerful instantaneous protection current capability of 11A, it effectively blocks static electricity hazards and ensures that the circuit board is not accidentally damaged. Its compact 90pF capacitance value optimizes signal transmission speed and quality, making it particularly suitable for applications that require high-speed data exchange and high sensitivity. It provides a sophisticated and powerful electrostatic protection solution for your electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HPJSD05CFN2(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpjsd05cfn2-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:41:57</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed as a bidirectional single channel, with a working voltage of 5V VRWM, and can withstand 20A instantaneous surge current, providing strong electrostatic protection for the circuit. Its compact 40pF capacitance ensures smooth and unobstructed high-speed signals, making it a carefully selected component for protecting electronic devices from electrostatic damage, enhancing the overall stability and durability of the system.]]></description>
</item>
<item>
	<title><![CDATA[HPESDNC5D5VB(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdnc5d5vb-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:41:45</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for a single channel, with a withstand voltage of 5V and strong 20A transient current processing ability. Its capacitance value is 33pF, ensuring that the circuit is protected from electrostatic impact while adapting to a wider range of data transmission rate requirements, adding a stable guarantee for the safe operation of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HRCLAMP0531T.TCT(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrclamp0531t-tct-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:41:33</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel applications and can operate stably at 5V voltage, providing 4A peak current electrostatic protection capability, effectively safeguarding circuit safety. Its capacitance value is as low as 0.5pF, ensuring the complete and non-destructive high-speed transmission of signals, making it an ideal solution for protecting highly sensitive electronic devices and enhancing the system‘s ability to resist electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HSPD9108W-2/TR(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hspd9108w-2-tr-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:41:21</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single signal protection, with a withstand voltage of 8V and a peak current withstand capacity of 18A, providing strong electrostatic shock resistance for the circuit. A low capacitance value of only 1pF ensures that high-speed signal transmission is not affected, making it an ideal choice for protecting high-frequency data lines from electrostatic damage and providing reliable guarantees for the safe operation of electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HCDSOD323-T12SC(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcdsod323-t12sc-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:41:09</pubDate>
	<description><![CDATA[This bidirectional single channel ESD protection diode has a working voltage VRWM of 12V and can withstand instantaneous pulse currents of up to 11A, providing robust electrostatic protection for the circuit. Having a small capacitance value of only 38pF ensures high-speed and lossless signal transmission, perfectly integrated into electronic designs sensitive to time delay. Whether it is a portable device or high-end communication equipment, it is a sophisticated solution to prevent static damage and ensure system stability.]]></description>
</item>
<item>
	<title><![CDATA[HESD5V0D3B-TP(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5v0d3b-tp-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:40:57</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is a single channel configuration suitable for 5V voltage environments and has a strong instantaneous current absorption capacity of 25A, building a solid electrostatic protection wall for sensitive circuits. Although the capacitance value is 35pF, it still ensures good signal integrity and is the preferred component to ensure the safe operation of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HSM24T1G(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsm24t1g-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:40:46</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is a unidirectional type with two channels, providing stable protection at a maximum operating voltage of 24V. Its peak pulse current can reach 7A, effectively blocking electrostatic shocks. The low capacitance design of 40 picosecond ensures non-destructive signal transmission, making it particularly suitable for protecting sensitive electronic circuits, preventing electrostatic damage, and ensuring stable equipment operation.]]></description>
</item>
<item>
	<title><![CDATA[HAZ5B65-01F(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz5b65-01f-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:40:34</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed to be bidirectional and designed specifically for single channel applications, effectively resisting electrostatic impacts. Its working voltage is 5V, and the peak pulse current can reach 4A, ensuring a reliable safety barrier. Having a low capacitance value of only 0.55pF, it ensures signal integrity while protecting sensitive circuits, making it particularly suitable for high-frequency transmission or data lines without causing significant signal attenuation.]]></description>
</item>
<item>
	<title><![CDATA[HSP3030-01ETG(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsp3030-01etg-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:40:22</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed specifically for unidirectional circuits, with a single channel configuration that can effectively withstand transient voltage surges. It maintains stability at a working voltage of 5V and has a peak current processing capability of 4A, ensuring the safety of the circuit. In addition, its low capacitance value is only 0.6pF, which helps to reduce signal attenuation and is particularly suitable for electrostatic protection in high-frequency transmission lines, thereby ensuring that sensitive electronic devices are not damaged by static electricity.]]></description>
</item>
<item>
	<title><![CDATA[HT5V0S5-7(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/ht5v0s5-7-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:40:10</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is a unidirectional type that focuses on single channel electrostatic protection. It has a rated voltage of 5V and can handle instantaneous currents up to 9.4A. Its capacitance value is 80pF, making it suitable for applications where signal delay is not very sensitive. It provides strong electrostatic shock resistance for electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HESD5411N(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5411n-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:39:58</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for a single signal line, with strong voltage resistance. The rated voltage VRWM is 7V, which can effectively suppress instantaneous pulse currents of up to 9A and protect the circuit from electrostatic discharge damage. It has a low capacitance value of 8pF, providing reliable protection while ensuring signal transmission quality. It is particularly suitable for modern electronic devices that require balanced protection and high-speed data transmission needs, and is an ideal choice for preventing static damage.]]></description>
</item>
<item>
	<title><![CDATA[HRLSD32A051V(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrlsd32a051v-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:39:46</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is designed specifically for a single channel, with a working voltage of 5V and a high pulse current withstand capacity of 28A, providing indestructible electrostatic protection for the circuit. Despite having a capacitance value of 200pF, it is still an ideal choice for applications that are less sensitive to speed but require strong protection, ensuring continuous and stable operation of equipment under electrostatic impact.
]]></description>
</item>
<item>
	<title><![CDATA[HSM24CANA-02HTG(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsm24cana-02htg-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:39:35</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is equipped with dual channels, suitable for 24V voltage environments, and can effectively cope with positive and negative polarity electrostatic shocks. Each channel can withstand a peak current of 4A, with a capacitance of only 10pF, ensuring reliable electrostatic protection in high-voltage systems without affecting signal transmission quality. It is the preferred solution for protecting multi line electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HGSOT08C-E3-08(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot08c-e3-08-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:39:23</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is equipped with dual channels and operates at a voltage of up to 8V. It can withstand a peak pulse current of 15A, providing strong electrostatic protection for the circuit. The 170pF low capacitance characteristic ensures high-speed signal transmission without attenuation, making it an efficient component for protecting sensitive electronic devices and maintaining stable system operation.]]></description>
</item>
<item>
	<title><![CDATA[HPESD1LIN(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd1lin-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:39:11</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is optimized for single channel applications, with a withstand voltage of 15V and a 10A peak pulse current processing capability, providing comprehensive electrostatic protection for both ends of the circuit. Its ultra-low 9pF capacitance ensures lossless passage of high-speed signals, making it an ideal choice for high-speed data interfaces and precision circuit applications. Wear invisible electrostatic protective clothing for your electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HRESD1CANFHT116(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hresd1canfht116-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:38:59</pubDate>
	<description><![CDATA[This bidirectional ESD protective diode provides dual channel robust protection for your circuit. Stable operation at 24V voltage, able to easily cope with instantaneous current surges up to 5A, ensuring system safety. Combined with a capacitance value of 25 picoseconds, it ensures smooth and non-destructive signals, making it the preferred solution for anti-static interference in high-end electronic applications.]]></description>
</item>
<item>
	<title><![CDATA[HPESDNC2XD3V3B(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdnc2xd3v3b-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:38:47</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for 3.3V voltage applications, with a single channel design ensuring bidirectional electrostatic protection in the circuit. It can withstand a maximum instantaneous current impulse of 5A and has a capacitance value of 12pF, making it suitable for environments with less strict signal speed requirements. This device can effectively resist static damage and add a strong protective barrier to your electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HSELC24CI(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hselc24ci-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:38:36</pubDate>
	<description><![CDATA[This high-performance bidirectional ESD protection diode is designed specifically for a single signal line, with a withstand voltage of 24V, and can effectively withstand transient current surges of up to 6A, providing protection for the circuit. Its compact 1.3pF capacitance ensures the purity and efficiency of high-speed signal transmission, making it a carefully selected component for protecting high-performance electronic products and preventing electrostatic damage, making equipment operation safer and more reliable.]]></description>
</item>
<item>
	<title><![CDATA[HSZESD8351HT1G(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hszesd8351ht1g-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:38:24</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed as a unidirectional type, optimized for a single channel, and can operate stably at 3.3V voltage. With a peak current withstand capacity of 4A, ensure that the circuit is not damaged by electrostatic discharge. Its low capacitance characteristic of 0.6pF helps to reduce signal delay and is very suitable for protecting sensitive components in high-frequency transmission applications, improving overall system immunity and reliability.]]></description>
</item>
<item>
	<title><![CDATA[HESD8351HT1G(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd8351ht1g-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:38:12</pubDate>
	<description><![CDATA[This ESD protection diode has unidirectional protection function and is specially customized for a single signal line. Provide a stable anti-static solution at a working voltage of 3.3V. 4A peak current processing capability, effectively resisting transient high-voltage shocks. The 0.6pF low capacitance design ensures high-speed signal transmission without attenuation, suitable for various precision electronic devices, and ensures the safety and smoothness of data lines.]]></description>
</item>
<item>
	<title><![CDATA[HCESD1006HC5VB(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd1006hc5vb-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:38:00</pubDate>
	<description><![CDATA[This diode is designed for electrostatic protection and has bidirectional conductivity, suitable for a single circuit channel. It operates stably at a voltage of 5V and can withstand 20A peak transient current shocks, providing a hidden anti-static armor for the circuit board. The 40 picosecond capacitance value ensures the non-destructive transmission of high-speed signals and is an indispensable guardian of precision circuits and sensitive components, ensuring the continuity and reliability of system operation.]]></description>
</item>
<item>
	<title><![CDATA[HPESD5V0U1BB-Q(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd5v0u1bb-q-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:37:48</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is a single channel configuration with a withstand voltage of 5V, suitable for low voltage fields. The 2.5A peak current processing capability provides appropriate electrostatic protection for light load circuits. In addition, the low capacitance characteristic of only 3pF ensures the non-destructive passage of high-speed signals, making it an ideal anti-static companion for small electronic devices and high-frequency signal circuits.]]></description>
</item>
<item>
	<title><![CDATA[HESD5V0D3(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5v0d3-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:37:37</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed specifically for single critical circuits and can operate stably at 5V voltage. It has a peak current processing capacity of up to 28A, providing a powerful electrostatic protection shield for sensitive circuits. Although the capacitance value is 200pF, it is more suitable for signal protection scenarios with low speed requirements, ensuring circuit safety in harsh environments.]]></description>
</item>
<item>
	<title><![CDATA[HCESD882UC5VB-M(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd882uc5vb-m-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:37:25</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode has bidirectional characteristics and is designed specifically for a single signal line. It has a withstand voltage of 5V and a peak current capacity of 4A, providing solid electrostatic protection for circuits. A low capacitance value of 0.5pF ensures lossless passage of high-speed signals, making it an ideal choice for electrostatic protection in precision electronics and high-speed data transmission applications.]]></description>
</item>
<item>
	<title><![CDATA[HBV03C-F(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hbv03c-f-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:37:13</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is exquisitely designed with bidirectional protection function, specifically designed for single channel applications. Its working voltage is 3.3V, which can effectively withstand transient high voltage and protect sensitive circuits from electrostatic impact. Having a peak pulse current processing capability of 20A, ensuring reliability in high-energy events. The low capacitance value of 1pF ensures signal integrity and is particularly suitable for high-speed data transmission lines, providing robust protection while maintaining lossless signal quality.]]></description>
</item>
<item>
	<title><![CDATA[HESD5Z7.0T1G(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5z7-0t1g-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:37:01</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is optimized for 7V voltage applications and focuses on a single path electrostatic protection solution. The instantaneous current withstand capacity of 7A builds a strong defense line for sensitive circuits. Despite having a capacitance value of 60pF, it can still ensure effective protection and smooth signal flow in non high-speed signal scenarios, providing a stable electrostatic protection umbrella for electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HUCD32C03L01(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hucd32c03l01-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:36:49</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is customized for a 3.3V system, achieving bidirectional electrostatic protection through a single channel. It has a 17A peak transient current processing capability, building a strong defense line for circuit safety. Its ultra-low 1pF capacitance ensures high-speed and non-destructive signal transmission, making it an ideal guardian of high-end electronic devices and high-speed data lines, effectively enhancing the system‘s ability to resist electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HPESDNC9D5VB(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdnc9d5vb-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:36:38</pubDate>
	<description><![CDATA[The meticulously designed bidirectional ESD electrostatic protection diode is tailored for a single line, with a voltage resistance of 5V VRWM, to build a stable electrostatic protection network. The processing capability of 9A peak pulse current IPP allows for easy response even in the face of high-intensity electrostatic shocks, ensuring worry free circuit safety. In addition, with a low capacitance CJ of 15pF, it perfectly integrates efficient protection and signal integrity, especially suitable for high-frequency data transmission applications, adding strong guarantees for the stable operation of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HCESD923NC3V3B(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesd923nc3v3b-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:36:26</pubDate>
	<description><![CDATA[This product is a bidirectional ESD electrostatic protection diode specially designed for single channel circuits, with a low voltage protection threshold (VRWM) of 3.3V, which can effectively cope with bidirectional surges and protect precision components. Its peak pulse current processing capability reaches 11A (IPP), ensuring stable operation even under high-voltage transients. In addition, the low capacitance value (CJ) design of only 15pF can reduce signal delay, making it very suitable for electrostatic protection of high-speed data lines and ensuring signal integrity.]]></description>
</item>
<item>
	<title><![CDATA[HPESD5V0U1BL(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd5v0u1bl-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:36:14</pubDate>
	<description><![CDATA[This product is a bidirectional ESD protection diode specially designed for single signal lines. The working voltage VRWM is 5V and can withstand a peak transient current of 2.5A, ensuring circuit safety. Its capacitance value is as low as 2.5pF, which is very suitable for high-speed data transmission applications. It can provide efficient electrostatic protection for equipment without affecting signal integrity.]]></description>
</item>
<item>
	<title><![CDATA[HGBLC08CI-LF-T7(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgblc08ci-lf-t7-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:36:02</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is optimized for single channel circuit protection, with a withstand voltage of 8 volts and an instantaneous current carrying capacity of 18 amperes, constructing a stable electrostatic protection network. The exquisite design of the 1-picosecond capacitor reduces signal delay, making it an ideal guardian of high-speed communication ports. It provides invisible yet powerful electrostatic defense for precision electronic devices, ensuring smooth and unobstructed data transmission.]]></description>
</item>
<item>
	<title><![CDATA[HUDD32C03L01-IR0.1(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hudd32c03l01-ir0-1-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:35:50</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is tailored for a 3.3V single line and has a 20A high peak current processing capability, ensuring dual safety of the circuit under electrostatic impact. The ultra-low capacitance design of only 1pF perfectly adapts to high-speed signal paths, protecting almost without affecting signal quality, making it the preferred solution for modern high-performance electronic equipment electrostatic protection.]]></description>
</item>
<item>
	<title><![CDATA[HPESD5V0V1BB(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd5v0v1bb-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:35:39</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single channel circuits, with a withstand voltage of 5V and the ability to withstand 8A peak instantaneous current shocks. It has a low capacitance value of only 10pF, ensuring non-destructive high-speed signal passing. It is like the guardian of the circuit, silently resisting external static interference for electronic devices, improving the overall stability and reliability of the system.]]></description>
</item>
<item>
	<title><![CDATA[HRLSD32A051LC(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrlsd32a051lc-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:35:27</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single channel applications, with a voltage resistance of 5V and excellent bidirectional protection performance. The 4A peak current processing capability ensures the safety of the circuit under high-voltage transient conditions. The low capacitance design of 1pF minimizes signal attenuation, making it an ideal choice for ensuring high-speed data transmission and improving circuit reliability.]]></description>
</item>
<item>
	<title><![CDATA[HPSOT12C-LF-T7(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpsot12c-lf-t7-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:35:15</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is designed with dual channels and is optimized for 12V voltage environments. It can withstand up to 11A instantaneous static discharge current shocks, ensuring stable system operation. Its low capacitance characteristic of 90 picoseconds helps reduce signal delay and is suitable for various high-speed data lines, providing an invisible yet powerful electrostatic protection shield for precision electronic equipment, safeguarding circuit safety and data integrity.]]></description>
</item>
<item>
	<title><![CDATA[HPTVSUC3D5VB(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hptvsuc3d5vb-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:35:03</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed for single line deployment, with a working voltage of VRWM of 5V, which can effectively resist bidirectional electrostatic impacts. 4A peak current absorption capacity, providing electrostatic protection armor for circuit boards. The 1pF low capacitance design ensures smooth and unobstructed signals, making it the preferred component for protecting highly sensitive electronic devices and maintaining signal purity.]]></description>
</item>
<item>
	<title><![CDATA[HRSB6.8CMGJT2N 8K/R(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrsb6-8cmgjt2n-8k-r-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:34:51</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for a single signal line, with a voltage resistance VRWM of 5V, which can effectively respond to daily electrostatic threats. The peak current IPP processing capacity of 9A enables electronic devices to wear invisible protective clothing to prevent instantaneous static damage. The low capacitance characteristic CJ of 15pF ensures unobstructed high-speed signal transmission, making it an ideal choice for protecting precision circuits and improving system reliability.]]></description>
</item>
<item>
	<title><![CDATA[HPSD12C-LF-T7(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpsd12c-lf-t7-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:34:40</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is suitable for single signal protection, with a withstand voltage of 12V, and can work stably in high voltage environments. The peak pulse current processing capability of 11A effectively intercepts electrostatic shocks, ensuring circuit safety. Its low capacitance value of 38pF ensures uninterrupted high-speed signal transmission, making it an ideal choice for modern electronic devices that require both high-speed data transmission and electrostatic protection, such as mobile communication or portable devices, providing reliable protection for internal components.]]></description>
</item>
<item>
	<title><![CDATA[HSDD32C05L01(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsdd32c05l01-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:34:28</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode adopts a bidirectional design, providing efficient protection for single channel circuits. It can operate stably at a working voltage of 5V and has a peak pulse current processing ability of 17A, effectively resisting transient high voltage and ensuring circuit safety. Its capacitance value as low as 90pF ensures high speed and integrity of signal transmission, making it particularly suitable for precision electronic applications that have strict requirements for signal quality.]]></description>
</item>
<item>
	<title><![CDATA[HESD9L5.0ST5G(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd9l5-0st5g-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:34:16</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is designed specifically for single channel applications, with a withstand voltage of 5V and effective resistance to 4A instantaneous currents. Its ultra-low capacitance value of 0.5pF ensures that high-speed signal transmission is not affected, providing efficient and invisible electrostatic protection for precision electronic devices. It is an ideal companion for high-performance circuits.]]></description>
</item>
<item>
	<title><![CDATA[HESDA5V3L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesda5v3l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:34:04</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is specially designed with dual channels for precision circuit protection customization. Excellent performance within the working voltage range of 5V, capable of withstanding instantaneous pulse currents of up to 17A, effectively blocking electrostatic invasion. The 180 picosecond low capacitance design ensures smooth and unobstructed high-speed signals, and provides invisible electrostatic protection for electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HLY323DC15UL(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hly323dc15ul-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:33:53</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is specially designed for single channel circuits, with a maximum operating voltage of 15V and a peak current processing capacity of 10A, providing a stable electrostatic protection shield for sensitive electronic devices. Its ultra-low capacitance value of 1pF ensures high-speed and non-destructive signal transmission, making it an ideal component for ensuring the integrity of modern high-density circuit signals.]]></description>
</item>
<item>
	<title><![CDATA[HAZ5123-01H(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz5123-01h-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:33:41</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is specially designed for single channel circuits, with a working voltage VRWM of 3.3V, suitable for low voltage application scenarios. The peak pulse current processing capability of 9A effectively blocks electrostatic shocks and ensures circuit safety. The capacitance value of 15pF balances the needs of protection and signal transmission, making it particularly suitable for devices that require a certain capacitance budget to maintain signal integrity. It is a reliable partner for electrostatic protection in electronic design.]]></description>
</item>
<item>
	<title><![CDATA[HPESDNC3D5VB(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdnc3d5vb-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:33:29</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is specially designed for single channel circuits and has a 5V voltage withstand voltage (VRWM), providing reliable electrostatic protection. The peak pulse current IPP processing capability of 17A ensures that the circuit is still safe under high-voltage electrostatic impact. Although the capacitance value is 90pF, it can still maintain a sufficiently fast response speed in many applications, making it an ideal choice to protect electronic devices from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HSG3D15B3.3MA(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsg3d15b3-3ma-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:33:17</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is suitable for 3.3V voltage levels and provides excellent bidirectional protection through a single channel. The instantaneous current withstand capacity of up to 17A effectively resists electrostatic pulses and ensures circuit safety. The extremely low capacitance value of 1pF ensures that high-speed signal transmission is almost unaffected, making it a high-performance solution for protecting high-speed data lines and precision circuits from electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HESDTU5V0A1(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdtu5v0a1-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:33:05</pubDate>
	<description><![CDATA[This ESD protection diode is designed as a bidirectional single channel, with a maximum operating voltage of 5V, capable of withstanding 4A instantaneous current shocks, providing reliable electrostatic protection for the circuit. In addition, its capacitance value of only 0.5pF ensures high-speed and clear signal transmission, making it the preferred component for protecting precision electronic equipment and improving system immunity.]]></description>
</item>
<item>
	<title><![CDATA[HPSOT05C(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpsot05c-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:32:54</pubDate>
	<description><![CDATA[The meticulously crafted ESD protection diode adopts a unidirectional design and dual channel parallel protection. Stable operation under 5V working voltage, able to withstand 17A instantaneous current surge, ensuring circuit safety. The 180 picosecond capacitance value is exquisitely designed to reduce signal delay and provide a fast and silent electrostatic protection barrier for high sensitivity circuits.]]></description>
</item>
<item>
	<title><![CDATA[HRLSD32A051C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrlsd32a051c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:32:42</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed for single channel protection, with a voltage resistance of 5V VRWM, meeting the needs of most electronic devices. The 17A peak pulse current IPP processing capability provides electrostatic protection armor for circuit boards to resist instantaneous high voltage interference. Although the capacitance CJ is 90pF, it is still suitable for non limit rate signal lines, ensuring effective protection while maintaining the stability and safety of signal transmission.]]></description>
</item>
<item>
	<title><![CDATA[HCESDB5V0D5(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcesdb5v0d5-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:32:30</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is suitable for single lines and has a 5V working voltage tolerance. It can withstand instantaneous surge currents of up to 20A and has a capacitance value of 33pF. It is suitable for applications that require high current protection and do not require strict signal transmission speed, providing a strong electrostatic protection barrier for electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HSZESD7351HT1G(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hszesd7351ht1g-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:32:18</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed specifically for precision circuits and adopts unidirectional protection technology. It is configured with a single channel and can operate stably at a working voltage of 3.3V. Its excellent transient protection capability can withstand peak current surges of up to 4A, ensuring that sensitive components are not damaged by static electricity. The compact 0.6pF capacitance value ensures signal integrity and is particularly suitable for electrostatic protection in high-speed data lines, effectively improving system stability and reliability.]]></description>
</item>
<item>
	<title><![CDATA[HDESD5V0S1BL-7B(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdesd5v0s1bl-7b-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:32:06</pubDate>
	<description><![CDATA[This bidirectional ESD protective diode is specially designed for single circuit circuits, with a voltage breakdown threshold of 5V and the ability to withstand instantaneous surge currents of up to 20A, ensuring that the circuit is not damaged by static electricity. Integrated with a low capacitance value of only 40 picoseconds, it not only does not affect the quality of high-frequency signal transmission, but also provides an instant electrostatic discharge path, making it an ideal choice for protecting precision electronic components and making equipment operation more stable and worry free.]]></description>
</item>
<item>
	<title><![CDATA[HPESDUC2FD5VU(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesduc2fd5vu-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:31:55</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is tailor-made for single channel circuits, with a working voltage of 5V VRWM. It can effectively withstand transient current surges of 4A, providing precise solutions for electrostatic protection of electronic devices. Its capacitance value is as low as 0.6pF, which minimizes signal interference and is the preferred component to ensure the integrity of high-speed signal transmission and the safety of sensitive circuits.]]></description>
</item>
<item>
	<title><![CDATA[HSPD9103W-2/TR(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hspd9103w-2-tr-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:31:43</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specifically designed for 3.3V circuit protection, with a single channel design for bidirectional protection. It can withstand transient current surges of up to 17A and provide a tight electrostatic buffer for electronic devices. Its ultra-low 1pF capacitance ensures smooth and unobstructed high-speed signals, making it the preferred component for protecting high-frequency data lines and maintaining signal purity, suitable for various precision electronic applications.]]></description>
</item>
<item>
	<title><![CDATA[HAZC199-04S(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hazc199-04s-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:31:31</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode adopts a four channel design and is specially customized for 5V voltage systems. It can effectively withstand 4A transient current with a capacitance value of only 0.5pF, greatly reducing signal attenuation and providing comprehensive electrostatic protection for multi line electronic devices, ensuring signal integrity and improving system reliability and efficiency.]]></description>
</item>
<item>
	<title><![CDATA[HAZC099-04S(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hazc099-04s-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:31:19</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode features an innovative four channel layout designed specifically for 5V low voltage environments. It can withstand 4A peak current shocks and has a capacitance as low as 0.5pF, effectively reducing signal interference. It is the ideal guardian of multi-channel signal interfaces, providing efficient and precise electrostatic protection for modern electronic devices, ensuring signal purity and system stability.]]></description>
</item>
<item>
	<title><![CDATA[HESDB5V0(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdb5v0-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:31:07</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed with a single channel, withstand voltage of 5V, and can withstand 2A peak transient current. It has a capacitance value as low as 3.5pF, ensuring that the circuit is protected from electrostatic damage while minimizing attenuation of high-frequency signals. It is an ideal choice for electrostatic protection of precision electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[HESDA25L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesda25l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:30:55</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode adopts a unidirectional design and is equipped with dual channels, specifically designed to protect precision circuits. It operates stably at a working voltage of 24V and can withstand instantaneous pulse current shocks of up to 7A, ensuring excellent protection performance. At the same time, the capacitance value as low as 40pF ensures the high speed and integrity of signal transmission, making it very suitable for electronic devices with strict requirements for signal quality, effectively improving the system‘s ability to resist electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HLY323DC24UL(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hly323dc24ul-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:30:44</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is specially designed for single signal protection, with a withstand voltage of 24V and the ability to withstand 6A instantaneous impulse current, ensuring stable operation of the circuit in high-voltage electrostatic environments. Its capacitance value as low as 1.3pF ensures smooth transmission of high-speed signals, making it an ideal guardian of precision electronic devices and high-speed data interfaces, effectively improving system immunity and reliability.]]></description>
</item>
<item>
	<title><![CDATA[HBV12C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hbv12c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:30:32</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single signal protection, with a 12V working voltage and 12A peak current processing capability, forming a powerful electrostatic protection system. The 1pF low capacitance characteristic ensures the non-destructive passage of signals during high-speed transmission, making it the preferred solution for electrostatic protection in precision circuits and high-speed data lines, ensuring the efficient and stable operation of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HPESDRC2FD5VBL(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdrc2fd5vbl-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:30:20</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is designed as a bidirectional single circuit, with a withstand voltage of 5V and a peak current capacity of 4A, providing a tight electrostatic protection net for the circuit. Its ultra-low capacitance value of 0.5pF greatly reduces signal delay, making it an ideal component for ensuring high-speed signal transmission and improving the anti-static ability of electronic devices, suitable for various precision circuit protection needs.]]></description>
</item>
<item>
	<title><![CDATA[HRCLAMP3321P(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrclamp3321p-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:30:08</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel circuits with a working voltage of 3.3V, suitable for low voltage application environments. The peak current processing capacity of 4A provides stable electrostatic protection for the equipment. Its ultra-low capacitance value is only 0.3pF, ensuring that high-speed signal transmission is not affected by capacitance, making it a high-performance solution to protect high-frequency circuits from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HGSOT12C-E3-08(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot12c-e3-08-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:29:57</pubDate>
	<description><![CDATA[The carefully crafted unidirectional ESD protection diode provides dual robust protection for your electronic devices. Operates smoothly within the working voltage range of 12V, and can withstand an instantaneous current of up to 11A, effectively resisting electrostatic impacts. The small capacitance characteristic of 90 picosecond ensures lossless transmission of high-speed signals and is perfectly integrated into various precision circuits, providing invisible protective clothing for sensitive components and ensuring smooth and worry free data communication.]]></description>
</item>
<item>
	<title><![CDATA[HPESDXC2FD5VU(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdxc2fd5vu-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:29:45</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is a unidirectional type designed specifically for a single circuit channel, capable of stable operation at 5 volts and withstanding a peak transient current of 4 amperes, providing precise electrostatic protection for electronic devices. Its ultra-low capacitance of 0.6 picosecond ensures lossless transmission of high-speed signals, making it particularly suitable for protecting high-frequency signal lines with strict requirements, improving overall system performance and stability.]]></description>
</item>
<item>
	<title><![CDATA[HESD5311N(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5311n-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:29:33</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed for single channel circuits and is stable and reliable at a working voltage of 5V. It can withstand transient current shocks of 4A, ensuring circuit safety. Its capacitance value is only 0.6pF, greatly reducing signal attenuation and delay. It is an ideal component for protecting high-frequency circuits and weak signal applications, ensuring signal integrity and high system performance.]]></description>
</item>
<item>
	<title><![CDATA[HAZ5325-01F(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz5325-01f-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:29:21</pubDate>
	<description><![CDATA[The bidirectional ESD electrostatic protection diode is designed as a single channel, with stable operation at 5V voltage and 4A peak current protection ability, effectively suppressing electrostatic damage. Its capacitance value is only 0.5pF, ensuring that high-speed signals pass through quickly and without damage. It is an ideal choice for preventing static interference and improving system stability on precision circuits and high-speed data lines.]]></description>
</item>
<item>
	<title><![CDATA[HSM24.TCT(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsm24-tct-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:29:09</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is specially designed with dual channels and is specifically designed for 24V voltage systems. It can withstand 7A transient current shocks and provide a strong electrostatic protection shield for circuit boards. Combined with the 40pF low capacitance characteristic, it reduces signal attenuation and ensures the integrity and non damage of high-speed signals, making it the preferred protective component for precision circuits and high-speed data transmission applications.]]></description>
</item>
<item>
	<title><![CDATA[HSD36C-01FTG(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsd36c-01ftg-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:28:57</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single channel applications, with a withstand voltage of 36V and the ability to withstand a peak current of 7A, providing comprehensive electrostatic protection. A capacitance value of 15pF ensures efficient protection while having little impact on signal transmission, making it an ideal choice for electronic devices pursuing high performance and signal integrity. Wear an electrostatic protective cover on your circuit board.]]></description>
</item>
<item>
	<title><![CDATA[HESD7951ST5G(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd7951st5g-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:28:46</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed for single channel applications and can operate stably at a working voltage of 5V. It has the ability to handle 3A peak transient current and provides bidirectional electrostatic protection for circuits. Its capacitance value of 0.8pF ensures efficient and pure signal transmission, making it a carefully selected component for ensuring the safety of internal components in various electronic devices and preventing electrostatic interference. It is suitable for demanding electrostatic protection scenarios.]]></description>
</item>
<item>
	<title><![CDATA[HESD7351HT1G(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd7351ht1g-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:28:34</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is designed specifically for low voltage applications, with a rated voltage of 3.3V, and can effectively cope with 4A transient currents, providing precise electrostatic protection for single lines. The ultra-low 0.6pF capacitance ensures lossless transmission of high-speed signals, making it an ideal electrostatic protection component for modern high-performance electronic circuits.]]></description>
</item>
<item>
	<title><![CDATA[HESD3BL5V0WS-BL(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd3bl5v0ws-bl-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:28:22</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single channel circuit protection, with a working voltage of VRWM of 5V, and is widely used in various electronic devices. With a peak pulse current IPP processing capability of 17A, it can effectively resist high-intensity electrostatic impact and build a strong defense line for circuit safety. The capacitance value CJ of 90pF ensures efficient electrostatic protection while also considering the applicability of signal transmission, making it a reliable partner for protecting circuits from electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HAZ5425-01F(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz5425-01f-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:28:10</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is suitable for single channel, stable and reliable under 5V working voltage, and can withstand 4A instantaneous current impact, providing solid electrostatic protection for circuits. The low capacitance design of 0.5pF ensures high-speed signal transmission without delay, making it the preferred component for protecting highly sensitive electronic devices and maintaining signal purity, enhancing the system‘s anti-interference ability.]]></description>
</item>
<item>
	<title><![CDATA[HAZ5825-01F(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/haz5825-01f-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:27:58</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode adopts a bidirectional design, specifically designed for single channel circuit protection. It can operate stably at a working voltage of 5V and has a peak pulse current processing ability of 20A, effectively resisting transient high voltage and ensuring circuit safety. Its capacitance value as low as 40pF ensures signal integrity, making it particularly suitable for electronic devices with high requirements for speed and reliability, providing a strong electrostatic protection barrier for sensitive components.]]></description>
</item>
<item>
	<title><![CDATA[HSM05-7(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsm05-7-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:27:46</pubDate>
	<description><![CDATA[This diode focuses on ESD protection and adopts a unidirectional design with two independent channels built-in. Withstand voltage of 5V, peak current withstand capacity of 17A, ensuring strong protection effectiveness. Its small capacitance value of 180pF ensures non-destructive transmission of high-speed signals, making it very suitable for electronic applications that are sensitive to static electricity, providing devices with an invisible anti-static coating.]]></description>
</item>
<item>
	<title><![CDATA[HSM12.TCT(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsm12-tct-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:27:34</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is equipped with a dual channel design, specifically designed for signal lines and data interfaces in electronic devices. It can maintain high performance under a continuous working voltage of 12V, withstand sudden electrostatic shocks, and withstand a peak current of 11A to ensure system safety. Its compact 90 picosecond capacitance ensures high-speed signal transmission without attenuation, making it an ideal choice for protecting sensitive circuits from electrostatic interference, making data flow more secure and efficient.]]></description>
</item>
<item>
	<title><![CDATA[SM36(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/sm36-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:27:23</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is specially designed with dual channels, withstand voltage of 36V, and can withstand transient current shocks of 5A, building an electrostatic protection barrier for the circuit. Its compact 35pF capacitance value reduces signal delay and is suitable for high-speed signal lines. It is an exquisite component that ensures electronic devices are not damaged by static electricity and improves system stability.]]></description>
</item>
<item>
	<title><![CDATA[HASD05CL(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hasd05cl-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:27:11</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is specially designed for single channel circuits, with a 5V voltage protection threshold (VRWM), and performs well in low voltage applications. The peak pulse current withstand capacity (IPP) of up to 17A provides strong electrostatic shielding for the circuit. Although the capacitance value CJ is 90pF, it can still effectively balance protection and signal quality for non extreme high-speed signal lines, making it the preferred solution for electrostatic protection of many electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HPESDAWC236T5VU(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdawc236t5vu-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:26:59</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is unique in its four channel design, specifically designed for 5V voltage platforms, capable of withstanding 4A instantaneous current shocks with a capacitance value of only 0.5pF, ensuring lossless high-speed signal flow and providing comprehensive electrostatic protection for multi line electronic devices, enhancing system stability and data transmission quality.]]></description>
</item>
<item>
	<title><![CDATA[HSM24-02HTG(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsm24-02htg-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:26:47</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode adopts a dual channel design and can operate stably at 24V voltage, providing professional protection against electrostatic interference in the circuit. It can withstand 7A instantaneous current shock, with a capacitance value of only 40pF, ensuring efficient protection and high-speed and clear signal transmission. It is the ideal guardian of precision electronic equipment and high-speed data interfaces.]]></description>
</item>
<item>
	<title><![CDATA[HSLC05C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hslc05c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:26:36</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single channel circuits, with a withstand voltage of 5V, which can effectively cope with bidirectional electrostatic discharge and protect circuit safety. The 4A peak current processing capability enhances the reliability of combating instantaneous voltage spikes. A 1pF low capacitance value ensures lossless transmission of high-speed signals, making it an ideal choice for ensuring signal integrity and improving system stability in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HUDD32C12L01(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hudd32c12l01-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:26:24</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specifically designed for single channel applications, with a rated voltage of 12V and the ability to withstand 12A instantaneous high current shocks, providing indestructible electrostatic protection for circuits. The low capacitance value of 1pF ensures the pure and high-speed transmission of signals, making it the preferred electrostatic protection for precision circuits and high-speed data interfaces, adding points to the stability and reliability of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HAR1211D3(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/har1211d3-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:26:12</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially designed for single channel circuits, with a withstand voltage of 12V and a peak current processing capacity of 12A, providing strong electrostatic protection for circuit boards. The 1pF ultra-low capacitance design ensures uninterrupted high-speed signal transmission, making it an ideal guardian of precision electronics and high-frequency data circuits, ensuring stable operation of equipment in complex electromagnetic environments.]]></description>
</item>
<item>
	<title><![CDATA[HPESDUC2XD3V3BF(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesduc2xd3v3bf-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:26:00</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for a single signal line and can operate stably at 3.3V voltage, providing 4A peak current protection and effectively resisting electrostatic damage. Its capacitance value is only 0.55pF, ensuring high-speed signal transmission without attenuation, making it an ideal choice for protecting high-frequency data lines, improving system stability and data integrity.]]></description>
</item>
<item>
	<title><![CDATA[SM15(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/sm15-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:25:48</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed specifically for precision circuits, using unidirectional protection technology and equipped with a dual channel structure. Its working voltage is 15V, which can effectively cope with transient current surges as high as 10A, ensuring the safety of sensitive components. The capacitance value as low as 60pF ensures signal integrity, making it particularly suitable for high-speed data transmission lines. It does not affect transmission speed and provides a reliable electrostatic protection barrier.]]></description>
</item>
<item>
	<title><![CDATA[HPESD5V0L1BA,115(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd5v0l1ba-115-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:25:37</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single channel applications, with a VRWM withstand voltage of 5V, suitable for the protection needs of various electronic devices. It has a peak pulse current IPP processing capability of 17A, which can effectively block bidirectional electrostatic discharge and protect circuit safety. Although the capacitance CJ is 90pF, it can still maintain good signal integrity in many non high-speed signal scenarios, providing strong electrostatic protection support for your circuit.]]></description>
</item>
<item>
	<title><![CDATA[HGBL03C-A(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgbl03c-a-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:25:25</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for 3.3V circuits, with single channel support for bidirectional electrostatic protection and a 17A high transient current withstand capacity, building a solid anti-static barrier for sensitive components. Its capacitance value is only 1pF, greatly reducing the impact on high-speed signal transmission. It is an ideal choice to ensure data line integrity and improve system immunity, suitable for various precision electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HSM36.TCT(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsm36-tct-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:25:13</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is designed with dual channels and can operate stably at a working voltage of 36V. It has a 5A peak current withstand capacity and provides strong electrostatic protection for the circuit. Its compact 35 picosecond capacitance ensures high speed and fidelity of signal transmission, making it very suitable for protecting fine circuits in modern high-performance electronic devices, preventing electrostatic damage, and improving system reliability.]]></description>
</item>
<item>
	<title><![CDATA[GBLC12C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/gblc12c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:25:01</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single signal circuits, with a withstand voltage of 12V and the ability to withstand transient current surges of 12A, providing efficient electrostatic protection for electronic devices. Its low capacitance value of 1pF ensures clear and non-destructive signal transmission at high speeds, making it an ideal solution for precision circuits and high-speed interface electrostatic protection, providing strong support for stable system operation.]]></description>
</item>
<item>
	<title><![CDATA[HPESD5V0S1BA,115(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd5v0s1ba-115-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:24:49</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single channel applications, with stable and reliable performance at a working voltage of 5V. Its 25A peak current processing ability highlights its outstanding protective effectiveness. Although the capacitance value is 35pF, it can still ensure the quality of most signal transmission and is an efficient component for protecting precision circuits from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HBV15C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hbv15c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:24:38</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single channel applications, with a withstand voltage of 15V, and can effectively withstand 10A peak current, providing comprehensive electrostatic protection for electronic devices. The 1pF low capacitance characteristic ensures efficient and pure high-speed signal transmission, making it an ideal choice for protecting high-performance circuit boards and sensitive electronic components.]]></description>
</item>
<item>
	<title><![CDATA[HGBL05C-A(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgbl05c-a-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:24:26</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially designed for single channel circuits, with a working voltage of VRWM of 5V, which can resist bidirectional electrostatic interference. The peak current processing capability of 4A provides a solid guarantee for circuit safety. The low capacitance design of 1pF ensures fast and clear signal transmission, making it the preferred component for protecting precision electronic equipment and improving system performance.]]></description>
</item>
<item>
	<title><![CDATA[HSEH1501D3(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hseh1501d3-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:24:14</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is optimized for single signal protection and can operate stably at 15V voltage, withstand 10A instantaneous current shocks, and provide excellent electrostatic protection efficiency for circuits. The 1pF low capacitance design ensures non-destructive and pure high-speed data transmission, making it the preferred device for electrostatic protection in precision electronic and communication equipment.]]></description>
</item>
<item>
	<title><![CDATA[HAR1511D3(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/har1511d3-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:24:02</pubDate>
	<description><![CDATA[This bidirectional ESD protective diode is designed specifically for single channel circuits, with a working voltage of 15V and a peak current processing capacity of 10A, providing strong electrostatic protection for electronic devices. A capacitance value of only 1pF ensures smooth high-speed signal transmission, making it the best choice for protecting precision circuits and improving system stability.]]></description>
</item>
<item>
	<title><![CDATA[HBV08C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hbv08c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:23:51</pubDate>
	<description><![CDATA[Carefully crafted bidirectional ESD protection diode, specially customized for a single signal line. Withstand voltage of 8V, with a peak current processing capacity of 18A, ensuring circuit safety under high-voltage transient conditions. The ultra-low 1pF capacitor design minimizes signal attenuation and perfectly adapts to high-speed data transmission scenarios, providing your electronic devices with invisible anti-static armor to protect core components from static interference.]]></description>
</item>
<item>
	<title><![CDATA[HSET23A12L02(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hset23a12l02-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:23:39</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed specifically for precision circuits, using unidirectional protection technology and equipped with dual channels. It can operate stably at a working voltage of 12V and has a transient impact resistance of up to 11A, effectively blocking damage caused by electrostatic discharge. In addition, its capacitance value as low as 90pF ensures signal integrity, making it very suitable for the electrostatic protection needs of high-speed data transmission lines. It does not affect signal quality and can provide reliable protective barriers.]]></description>
</item>
<item>
	<title><![CDATA[HUCD32C12L01(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hucd32c12l01-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:23:27</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed for single channel applications and has a maximum operating voltage of 12V and a peak current processing capacity of 12A, providing a solid electrostatic protection wall for circuits. The low capacitance characteristic of 1pF ensures the integrity of signals during high-speed transmission, making it a high-quality choice for protecting sensitive electronic devices and improving system immunity, safeguarding data communication security.]]></description>
</item>
<item>
	<title><![CDATA[HGBLC15C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgblc15c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:23:15</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed for single line deployment, with withstand voltage of 15V and 10A peak current processing performance, building a solid electrostatic protection network for sensitive circuits. Its optimized 1pF capacitance value ensures complete and non-destructive high-speed transmission of signals, making it an ideal component for ensuring stable operation of electronic devices in complex electromagnetic environments.]]></description>
</item>
<item>
	<title><![CDATA[HUDD32C08L01(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hudd32c08l01-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:23:04</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single channel circuits, with a working voltage of up to 8V and the ability to withstand 18A peak pulse current shocks, providing solid protection. Its compact 1pF capacitor ensures complete and non-destructive high-speed signals, making it ideal for protecting various electronic devices from electrostatic damage, especially suitable for electrostatic protection needs in high-sensitivity applications, providing protection for your precision circuits.]]></description>
</item>
<item>
	<title><![CDATA[HSM12T1G(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsm12t1g-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:22:52</pubDate>
	<description><![CDATA[This unidirectional ESD electrostatic protection diode is equipped with dual channels, withstand voltage of 12V, and can withstand 11A instantaneous high current, building a stable electrostatic protection barrier for the circuit system. The 90pF low capacitance design ensures unobstructed high-speed signal transmission, making it the preferred solution for protecting highly sensitive electronic devices and improving system reliability.]]></description>
</item>
<item>
	<title><![CDATA[HUDD32C24L01(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hudd32c24l01-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:22:40</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode is a bidirectional single channel device with a working voltage of up to 24V, capable of withstanding 6A peak transient current shocks, ensuring circuit safety. Its 1.3pF small capacitance ensures non-destructive transmission of high-speed signals, making it ideal for protecting electronic applications that are sensitive to static electricity and require high data transmission rates. It is an ideal component that combines efficient protection and signal integrity.]]></description>
</item>
<item>
	<title><![CDATA[HRCLAMP0521P(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hrclamp0521p-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:22:28</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is optimized for single channel applications, effectively blocking electrostatic shocks at a maximum operating voltage of 5V, and providing strong protection for circuit safety with a 4A peak current processing capability. In addition, the low capacitance characteristic of 0.5pF ensures the integrity of the signal and is particularly suitable for high-speed data transmission and electrostatic sensitive electronic devices, enhancing the system‘s protection level.]]></description>
</item>
<item>
	<title><![CDATA[HUDD32C05L01(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hudd32c05l01-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:22:16</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single line operation, with a withstand voltage of 5V and bidirectional protection function, effectively blocking transient voltage surges. 4A peak current processing capability, enhancing circuit protection level. The 1pF low capacitance characteristic ensures signal integrity and is particularly suitable for high-speed data transmission, providing stable and efficient electrostatic protection solutions for electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HAR0511D3(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/har0511d3-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:22:04</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is a single channel configuration with a voltage resistance of 5V, providing comprehensive electrostatic protection. The 4A peak current processing capability ensures the safety of the circuit under electrostatic impact, while the 1pF capacitance design ensures high-speed and non-destructive signal transmission, making it an ideal electrostatic protection element for precision circuits and high-speed data lines.]]></description>
</item>
<item>
	<title><![CDATA[HUBD32C05L01(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hubd32c05l01-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:21:53</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel applications and has a maximum operating voltage of 5V, effectively responding to electrostatic threats from both directions. The peak current processing capability of 4A provides a strong anti-static barrier for the circuit. The low capacitance design of 1pF ensures that high-speed data signal transmission is not affected, making it an efficient solution to protect sensitive electronic circuits from electrostatic damage.]]></description>
</item>
<item>
	<title><![CDATA[HGBLC24C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgblc24c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:21:41</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for a single signal line, with strong voltage resistance, up to 24V, and can withstand peak instantaneous currents of 6A, providing solid protection for equipment. Having a low capacitance value of only 1.3pF, ensuring high-speed signal transmission without interference, is an ideal choice for protecting precision electronic circuits from electrostatic discharge damage. It not only does not sacrifice speed, but also ensures the safety and stability of the circuit.]]></description>
</item>
<item>
	<title><![CDATA[HUDD32C15L01(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hudd32c15l01-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:21:29</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed as a single channel, with a voltage resistance of up to 15V and the ability to withstand 10A instantaneous current surges, providing a wider protection range for the circuit. The low capacitance characteristic of 1pF ensures high-speed and clear signal transmission, making it a cost-effective solution for modern micro electronic devices to prevent electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HBV03C-H(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hbv03c-h-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:21:17</pubDate>
	<description><![CDATA[We introduce this bidirectional ESD electrostatic protection diode, specifically designed for single channel operation at 3.3V voltage, capable of withstanding transient current surges up to 20A, providing excellent bidirectional electrostatic protection. The ultra-low 1pF capacitance value ensures complete and non-destructive high-speed signals, making it an ideal choice for high-end electronic devices that pursue ultimate signal transmission performance and electrostatic protection, safeguarding your circuit safety.]]></description>
</item>
<item>
	<title><![CDATA[HPESDNC5D7VU(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdnc5d7vu-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:21:05</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is designed specifically for 7V voltage systems and provides single channel electrostatic protection. 7A peak current processing capability, effectively blocking electrostatic threats. The 60pF capacitance value is suitable for non high-speed signal environments, ensuring that the circuit is not damaged by static electricity while maintaining good signal integrity, providing stable and reliable guarantees for the daily operation of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HESDBV5V0D5-TP(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdbv5v0d5-tp-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:20:54</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for single channel signals, with a withstand voltage of 5V, suitable for low-power applications. The processing capacity of 2.5A peak pulse current is small, but sufficient to meet the needs of lightweight electrostatic protection. The ultra-low capacitance value of 3pF ensures unobstructed high-speed signal transmission, making it an ideal choice for micro electronic devices that pursue both signal integrity and anti-static measures.]]></description>
</item>
<item>
	<title><![CDATA[HSET23A05L02(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hset23a05l02-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:20:42</pubDate>
	<description><![CDATA[This unidirectional ESD protective diode is equipped with a dual channel design, providing precise protection for your circuit. The highest working voltage of 5V and the peak pulse current processing capacity of 17A ensure reliable protection in the event of electrostatic impact. In addition, with a low capacitance value of only 180 picoseconds, it does not affect signal transmission speed and can maintain signal purity, making it the preferred solution to protect precision electronic equipment from electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HESD5341N(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5341n-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:20:30</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is specially designed for single channel circuits and can operate stably at a working voltage of 5V. It has the ability to handle 4A peak current and provides precise electrostatic protection for the circuit. Its ultra-low capacitance value is only 0.6pF, ensuring non-destructive and pure high-speed signal transmission, making it the preferred solution for protecting sensitive components in precision electronics and high-frequency communication applications.]]></description>
</item>
<item>
	<title><![CDATA[HGSOT05C(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgsot05c-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:20:18</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed specifically for precision circuits, using unidirectional protection technology and equipped with dual channels. It can operate stably at a working voltage of 5V and has the ability to handle peak pulse currents of 17A, effectively resisting transient high-voltage shocks. The capacitance value as low as 180pF ensures high-speed signal integrity, making it particularly suitable for protecting sensitive electronic devices from electrostatic discharge damage, ensuring system stability and data security.]]></description>
</item>
<item>
	<title><![CDATA[HSM24CANB-02HTG(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsm24canb-02htg-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:20:06</pubDate>
	<description><![CDATA[This product is a high-performance bidirectional ESD electrostatic protection diode designed specifically for dual circuits, which can effectively block electrostatic interference under 24V working voltage. With its 5A peak current processing capability, it performs excellently in protecting sensitive circuits from transient voltage damage. In addition, the low capacitance value of only 25 picoseconds ensures that high-speed signal transmission is not disturbed, making it an ideal choice for ensuring the safety of precision electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[HCEST23NC24VB(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcest23nc24vb-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:19:55</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is designed in both directions and is specifically designed for scenarios that require efficient electrostatic protection. It is equipped with a dual channel structure, which can operate stably at a working voltage of 24V, and has the ability to withstand 5A peak current, ensuring the safety of the circuit. In addition, its capacitance value as low as 25pF ensures signal integrity, making it particularly suitable for electronic devices with high requirements for speed and reliability, effectively preventing damage caused by electrostatic shocks.]]></description>
</item>
<item>
	<title><![CDATA[HESDLC3V3D3B(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdlc3v3d3b-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:19:43</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for 3.3V voltage applications and achieves bidirectional electrostatic protection through a single channel. Its outstanding 17A transient current processing capability provides a powerful protective shield for the circuit. The ultra-low 1pF capacitance value ensures minimal signal delay, perfectly adapts to high-speed data interfaces, effectively blocks electrostatic interference while maintaining signal integrity, making it the preferred solution for high-performance electronic equipment electrostatic protection.]]></description>
</item>
<item>
	<title><![CDATA[HSPD9105W-2/TR(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hspd9105w-2-tr-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:19:31</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially designed for single line protection, with a withstand voltage of 5V, achieving bidirectional electrostatic protection. The 4A peak current processing capability provides strong protection for the circuit board and resists transient high voltage attacks. The exquisite design of 1pF capacitance ensures smooth and non-destructive high-speed signals, making it the preferred solution for modern electronic devices to prevent static electricity and maintain signal purity.]]></description>
</item>
<item>
	<title><![CDATA[HSG3D15B5.0MA(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsg3d15b5-0ma-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:19:19</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single channel applications, with a working voltage of VRWM of 5V, which can fully resist bidirectional electrostatic shocks. The peak current withstand capacity of 4A provides invisible protective clothing for the circuit board, effectively blocking static electricity damage. A low capacitance value of 1pF ensures fast and unobstructed signal transmission, making it an ideal component for protecting highly sensitive electronic devices and improving system stability.]]></description>
</item>
<item>
	<title><![CDATA[HGBLC05CI-LF-T7(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgblc05ci-lf-t7-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:19:07</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed as a single channel, with a withstand voltage of 5V, and can effectively cope with bidirectional electrostatic shocks. 4A peak current processing performance, fully protecting the circuit from electrostatic damage. A lower capacitance value of 1pF ensures high-speed signal transmission without delay, making it a preferred component in precision electronic and communication equipment to prevent static interference and ensure data security.]]></description>
</item>
<item>
	<title><![CDATA[HESDSLC5V0D3B-TP(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdslc5v0d3b-tp-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:18:56</pubDate>
	<description><![CDATA[This product is a bidirectional ESD electrostatic protection diode, specifically designed for single signal line configuration, with a withstand voltage of 5V, suitable for a wider voltage range. Its bidirectional protection characteristics ensure comprehensive defense against forward and reverse static electricity, and the 4A peak current processing ability effectively suppresses transient voltage events. The ingenious design of 1pF capacitance value ensures signal integrity while protecting, making it an ideal solution for anti-static high-speed signal interfaces.]]></description>
</item>
<item>
	<title><![CDATA[HCDSOT23-T24CAN-Q(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hcdsot23-t24can-q-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:18:44</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for dual channels, with a withstand voltage of 24V and a peak current absorption capacity of 5A, providing a strong electrostatic barrier for multi circuit boards. The capacitance value is 25pF, suitable for environments with less stringent signal speed requirements, ensuring stable and safe system operation in high electrostatic environments. It is the preferred component for electrostatic protection of multi interface electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HSEH0501D3(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hseh0501d3-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:18:32</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed specifically for single channel use, with a withstand voltage of 5V, suitable for a wider range of voltage environments. The bidirectional protection mechanism can effectively resist static electricity of both positive and negative polarity, with a peak current processing capacity of 4A, building a solid defense line for circuit safety. The capacitance value of 1pF balances the needs of protection and signal transmission speed, especially suitable for electronic devices that require high-speed data transmission and enhanced electrostatic protection.]]></description>
</item>
<item>
	<title><![CDATA[HPTVSHC3D4V5BH(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hptvshc3d4v5bh-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:18:20</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is customized for a single channel device, with a VRWM operating voltage of 4.5V and a 160A high peak current protection capability, forming a tight electrostatic barrier. Although the capacitance value of 300pF is slightly higher, it can effectively balance electrostatic protection and cost-effectiveness for non high-speed signal environments. It is an ideal choice for consumer grade electronic products and entry-level communication equipment, ensuring that the equipment is free from electrostatic interference and operates more safely and stably.]]></description>
</item>
<item>
	<title><![CDATA[HPESDNC23T24VB(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdnc23t24vb-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:18:08</pubDate>
	<description><![CDATA[This bidirectional dual channel ESD protection diode has a rated voltage of 24V and a 5A peak current processing capability, providing efficient electrostatic protection for dual line systems. Although the 25pF capacitance value is relatively high, it can effectively balance the needs of static electricity protection and signal transmission in specific application scenarios, making it a reliable guardian to protect multi-channel electronic devices from static electricity damage.]]></description>
</item>
<item>
	<title><![CDATA[HPESD5V0S1BAF(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesd5v0s1baf-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:17:56</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is optimized for single circuit protection and can operate stably at a working voltage of 5V. It has a high transient current processing capacity of 25A and provides a powerful electrostatic protection shield for circuits. The capacitance value of 35 picoseconds ensures low distortion transmission of signals in a wide frequency range, making it an ideal component for electrostatic protection in consumer electronics and communication equipment.]]></description>
</item>
<item>
	<title><![CDATA[HESD56151W04-2/TR(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd56151w04-2-tr-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:17:45</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is specially designed for single channel low-voltage equipment, with a withstand voltage of 4.5V and the ability to withstand peak current shocks of 160A, constructing a stable electrostatic protection network. Although the capacitance value is 300pF, it is suitable for situations that do not require high signal speed but emphasize strong protection, such as portable devices and household appliances, to ensure that static electricity hazards are avoided in daily use, improve system reliability and user peace of mind experience.]]></description>
</item>
<item>
	<title><![CDATA[HSZNUP2105LT1G(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hsznup2105lt1g-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:17:33</pubDate>
	<description><![CDATA[This bidirectional dual channel ESD electrostatic protection diode is optimized for 24V working voltage and can effectively withstand 5A instantaneous current surge, providing comprehensive electrostatic protection for your dual wire circuit. Despite having a capacitance value of 25pF, it is still suitable for applications that are less sensitive to signal delay, ensuring the stability and safety of equipment under high electrostatic threats.]]></description>
</item>
<item>
	<title><![CDATA[HPESDNC2FD5VBH(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdnc2fd5vbh-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:17:21</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed as a single channel, with a withstand voltage of 5V and the ability to withstand a peak transient current of 20A, providing effective electrostatic protection for the circuit. The 40pF capacitance value is suitable for environments with low signal speed requirements, ensuring good signal integrity while protecting the circuit. It is the preferred solution to improve the anti-static interference ability of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HDSD4V5TC(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hdsd4v5tc-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:17:09</pubDate>
	<description><![CDATA[This bidirectional ESD protection diode is designed specifically for low voltage single line applications, with a withstand voltage of 4.5V and a powerful 160A instantaneous current processing capability, providing solid protection for the circuit. Although the capacitance value is 300pF, it can effectively balance electrostatic protection and cost-effectiveness in situations where signal integrity requirements are not strict. It is an economical choice to prevent electrostatic damage in lightweight applications such as consumer electronics and IoT devices, ensuring stable equipment operation.]]></description>
</item>
<item>
	<title><![CDATA[HPESDUC2XD5VB(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesduc2xd5vb-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:16:57</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is optimized for single channel applications and performs well at a working voltage of 5V. It has the ability to handle 4A peak current and effectively suppress bidirectional electrostatic discharge events. Its capacitance value is only 0.55pF, which has a minimal impact on signal transmission speed and quality. It is a cost-effective choice for protecting precision circuits and high-speed data interfaces from electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[HPTVSHC3D15VUH(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hptvshc3d15vuh-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:16:46</pubDate>
	<description><![CDATA[This unidirectional ESD protection diode is designed specifically for single channel use, with a withstand voltage of 15V and the ability to withstand 60A high current pulses, providing a powerful electrostatic protection shield for circuits. Although the capacitance value of 330pF is slightly higher, it can still meet the signal transmission needs of most applications while ensuring strong protection. It is the preferred component for protecting the safety of electronic devices under high-energy transient events.]]></description>
</item>
<item>
	<title><![CDATA[HPESDU4581D3H(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hpesdu4581d3h-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:16:34</pubDate>
	<description><![CDATA[This bidirectional ESD electrostatic protection diode is designed for single channel configuration, with a voltage resistance of 4.5V, suitable for low voltage application environments. The peak current processing capacity of up to 160A provides excellent transient protection efficiency for sensitive circuits. Although the capacitance value is 300 picoseconds, it is still suitable for situations with low data transmission rates, effectively balancing the protection strength and signal transmission needs. It is an ideal guardian of anti-static interference in consumer electronics, portable devices, and other fields.]]></description>
</item>
<item>
	<title><![CDATA[BV05C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/bv05c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:16:22</pubDate>
	<description><![CDATA[The TVS/ESD protector introduced to you is the guardian angel of precision electronic devices. It has a reverse cut-off voltage of 5.0V, ensuring that it does not affect the daily operation of the circuit. At the same time, when encountering voltage spikes, the maximum clamping voltage is 16V, effectively protecting against overvoltage damage. Its peak pulse current can reach 10 amperes, combined with a peak pulse power of 160 watts, it performs well under 10/1000 microsecond pulse testing, providing powerful and rapid protection for your sensitive electronic components, ensuring the stability and safety of the equipment in various environments.]]></description>
</item>
<item>
	<title><![CDATA[HGBLC12C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgblc12c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:16:10</pubDate>
	<description><![CDATA[This selected TVS/ESD protection device is designed specifically for high reliability electronic systems. The reverse cut-off voltage of 12V ensures the normal operation of the circuit, while the maximum clamping voltage of 30V can effectively withstand instantaneous high voltage shocks. Its characteristic lies in its peak pulse current processing capacity of 15 amperes and peak pulse power of up to 400 watts, ensuring a rock solid protection effect even in the face of harsh pulses of 10/1000 microseconds. We provide strong security guarantees for your precision electronic applications such as circuit boards and communication equipment, ensuring stable operation and avoiding the threat of static electricity and surges.]]></description>
</item>
<item>
	<title><![CDATA[HGBLC03C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hgblc03c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:15:58</pubDate>
	<description><![CDATA[The TVS/ESD protector presented to you is the guardian of precision electronic devices. The reverse cut-off voltage of 3.3V ensures that it does not affect the normal operation of the circuit, while the maximum clamping voltage of 18V effectively blocks transient high voltage and protects circuit safety. Excellent performance includes a peak pulse current processing capability of 20 amperes and a peak pulse power of 360 watts, providing strong and reliable protection even in the face of harsh 10/1000 microsecond pulse impacts, building a solid barrier for your electronic system, ensuring stable equipment operation and worry free data transmission.]]></description>
</item>
<item>
	<title><![CDATA[BV03C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/bv03c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:15:46</pubDate>
	<description><![CDATA[We recommend this high-performance TVS/ESD electrostatic surge protection device specifically designed for precision electronic circuits. The reverse cut-off voltage of 3.3V ensures the normal operation of the circuit while providing comprehensive protection. Faced with surges, a maximum clamp voltage of 20V effectively suppresses voltage spikes and protects sensitive components. Its outstanding feature lies in its peak pulse current processing capacity of 20 amperes and astonishing peak pulse power of 400 watts. Even under harsh 10/1000 microsecond pulses, it can provide indestructible protection, like the guardian angel of electronic systems, ensuring stable and worry free operation of equipment in various environments.]]></description>
</item>
<item>
	<title><![CDATA[HESD5Z5.0T1G(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5z5-0t1g-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:15:35</pubDate>
	<description><![CDATA[The selected TVS/ESD electrostatic surge protector is an ideal choice for protecting precision electronic devices from static electricity and transient voltage damage. The 5.0V reverse cutoff voltage ensures non-interference protection of the circuit. When encountering voltage spikes, the maximum clamping voltage is only 14V, effectively limiting overvoltage damage. Excellent performance also includes a peak pulse current processing capacity of 9.4 amperes and a peak pulse power of 140 watts, which can provide a powerful protective shield under extreme 10/1000 microsecond pulse conditions, building a safety line for your sensitive components and ensuring worry free equipment operation.]]></description>
</item>
<item>
	<title><![CDATA[HESD5Z3.3T1G(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesd5z3-3t1g-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 06:14:53</pubDate>
	<description><![CDATA[Let me introduce you to this high-efficiency electrostatic and surge protector (TVS/ESD), designed specifically for precision electronic devices. It has a reverse cut-off voltage of 3.3V, which can provide solid protection without affecting normal circuit operation. Faced with transient high-voltage shocks, the maximum clamping voltage is controlled at 10V, effectively suppressing voltage spikes. Excellent 11.2 ampere peak pulse current processing capability, as well as 90 watt peak pulse power, ensure strong protection even under 10/1000 microsecond pulses, wear an invisible bulletproof vest for your sensitive electronic components, protect circuit safety, and improve system stability.]]></description>
</item>
<item>
	<title><![CDATA[HLM78L05ACMX/NOPB(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hlm78l05acmx-nopb-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:48:43</pubDate>
	<description><![CDATA[HLM78L05ACMX/NOPB is a high-performance linear voltage regulator (LDO) designed in a compact SOP-8 package to provide stable and efficient power management solutions for various low-power electronic devices. This device has a fixed output voltage setting of 5V, suitable for circuit designs that require precise power supply. Its maximum input voltage is as high as 30V, which can maintain stable operation within a wide voltage range, ensuring that the output terminal always maintains a constant 5V level. Despite being compact, the HLM78L05ACMX/NOPB can still provide a maximum continuous output current of up to 0.1A, which is sufficient to meet the low-voltage power supply needs of most small embedded systems, consumer electronics, and communication devices. Lead free and compliant with RoHS standards, ensuring environmental compliance, is the ideal choice for building green and reliable electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[HLP2980IM5X-3.3(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hlp2980im5x-3-3-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:48:32</pubDate>
	<description><![CDATA[HLP2980IM5X-3.3 is a high voltage linear regulator (LDO) designed in a miniature SOT-23-5L package for applications that require a stable 3.3V power supply over a wide input voltage range. At a maximum input voltage of 16V, the device provides an output current of up to 0.15A, ensuring reliable and stable power support for the device under various power supply conditions. Its excellent linear adjustment ability and low noise performance ensure that the output voltage is accurately maintained at 3.3V, effectively resisting power fluctuations. Suitable for portable devices, IoT nodes, battery powered devices and other occasions that have strict requirements for power adaptability and size, providing efficient, low noise, and compact power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[HLP2980IM5X-5.0(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hlp2980im5x-5-0-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:48:20</pubDate>
	<description><![CDATA[HLP2980IM5X-5.0 is a high voltage linear regulator (LDO) designed in a compact SOT-23-5L package for applications that require a stable 5V power supply over a wide input voltage range. At a maximum input voltage of 16V, the device provides an output current of up to 0.15A, ensuring reliable and stable power support for the device under various power supply conditions. Its excellent linear adjustment ability and low noise performance ensure that the output voltage is accurately maintained at 5V, effectively resisting power fluctuations. Suitable for portable devices, IoT nodes, battery powered devices and other occasions that have strict requirements for power adaptability and size, providing efficient, low noise, and compact power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[HLP2985AIM5X-3.3(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hlp2985aim5x-3-3-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:48:09</pubDate>
	<description><![CDATA[HLP2985AIM5X-3.3 is a wide voltage linear regulator (LDO) designed in a miniature SOT-23-5L package for applications that require stable 3.3V power supply across a wide range of input voltages. At a maximum input voltage of 16V, the device provides a continuous output current of up to 0.2A, ensuring consistent and reliable power support for the device in different power supply environments. Its excellent linear regulation ability and low noise performance ensure that the output voltage is precisely locked at 3.3V, effectively suppressing power fluctuations. Suitable for portable devices, wireless sensor networks, battery powered systems, and other occasions with strict standards for power adaptability and size, providing efficient, low noise, and compact power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[HLP2985AIM5X-5.0(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hlp2985aim5x-5-0-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:47:58</pubDate>
	<description><![CDATA[HLP2985AIM5X-5.0 is a wide voltage linear regulator (LDO) designed for devices that require stable 5V power supply under high input voltage, using an ultra small SOT-23-5L package. Within the maximum input range of 16V, the device can provide a maximum output current of 0.2A, ensuring a constant and efficient power supply to the load under various power conditions. Its excellent linear adjustment performance and low noise characteristics ensure that the output voltage is accurately maintained at 5V, effectively isolating input voltage fluctuations. Suitable for scenarios such as drone systems, outdoor electronic devices, battery powered devices, etc. that have strict requirements for power adaptability and space occupancy, providing efficient, low noise, and compact power solutions.]]></description>
</item>
<item>
	<title><![CDATA[HLP2985IM5X-3.3(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hlp2985im5x-3-3-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:47:46</pubDate>
	<description><![CDATA[HLP2985IM5X-3.3 is a high voltage linear regulator (LDO) designed in a compact SOT-23-5L package for applications that require a stable 3.3V power supply over a wide input voltage range. At a maximum input voltage of 16V, the device provides an output current of up to 0.2A, ensuring reliable and stable power support for the device under various power supply conditions. Its excellent linear adjustment ability and low noise performance ensure that the output voltage is accurately maintained at 3.3V, effectively resisting power fluctuations. Suitable for portable devices, IoT nodes, battery powered devices and other occasions that have strict requirements for power adaptability and size, providing efficient, low noise, and compact power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[HLP2992AIM5X-3.3/NOPB(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hlp2992aim5x-3-3-nopb-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:47:35</pubDate>
	<description><![CDATA[HLP2992AIM5X-3.3/NOPB is a wide voltage linear regulator (LDO) designed in a miniature SOT-23-5L package for applications that require stable 3.3V power supply across a wide range of input voltages. At a maximum input voltage of 18V, the device provides a continuous output current of up to 0.25A, ensuring consistent and reliable power support for the device in different power supply environments. Its excellent linear regulation ability and low noise performance ensure that the output voltage is precisely locked at 3.3V, effectively suppressing power fluctuations. Suitable for portable devices, wireless sensor networks, battery powered systems, and other occasions with strict standards for power adaptability and size, providing efficient, low noise, and compact power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[HLP2992AIM5X-5.0/NOPB(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hlp2992aim5x-5-0-nopb-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:47:23</pubDate>
	<description><![CDATA[HLP2992AIM5X-5.0/NOPB is a wide voltage linear regulator (LDO) designed for devices that require stable 5V power supply under high input voltage, using an ultra small SOT-23-5L package. Within the maximum input range of 18V, the device can provide a maximum output current of 0.25A, ensuring a constant and efficient power supply to the load under various power conditions. Its excellent linear adjustment performance and low noise characteristics ensure that the output voltage is accurately maintained at 5V, effectively isolating input voltage fluctuations. Suitable for scenarios such as drone systems, outdoor electronic devices, battery powered devices, etc. that have strict requirements for power adaptability and space occupancy, providing efficient, low noise, and compact power solutions.]]></description>
</item>
<item>
	<title><![CDATA[HLP2992IM5X-3.3/NOPB(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hlp2992im5x-3-3-nopb-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:47:12</pubDate>
	<description><![CDATA[HLP2992IM5X-3.3/NOPB is a high voltage linear regulator (LDO) designed in a compact SOT-23-5L package for applications that require stable 3.3V power supply over a wide voltage range. At a maximum input voltage of 18V, the device can provide an output current of up to 0.25A, ensuring reliable and stable power support for the device under various power supply conditions. Its excellent linear adjustment ability and low noise performance ensure that the output voltage is accurately maintained at 3.3V, effectively resisting power fluctuations. Suitable for portable devices, wireless sensors, battery powered devices and other occasions that have strict requirements for power adaptability and size, providing efficient, low noise, and compact power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[HLP2992IM5X-5.0/NOPB(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hlp2992im5x-5-0-nopb-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:47:01</pubDate>
	<description><![CDATA[HLP2992IM5X-5.0/NOPB is a high voltage linear regulator (LDO) designed for devices that require stable 5V power supply in high-voltage environments, using a miniature SOT-23-5L package. Equipped with a wide input voltage range, capable of operating at a maximum of 18V, providing a continuous output current of up to 0.25A, ensuring stable and sufficient power supply for loads even in high voltage input scenarios. This device has excellent linear adjustment characteristics and low noise performance, ensuring that the output voltage is accurately maintained at 5V and effectively isolating input fluctuations. Suitable for situations such as drones, outdoor equipment, battery management systems, etc. that have strict requirements for power voltage range and stability, providing compact, efficient, and low-noise power solutions.]]></description>
</item>
<item>
	<title><![CDATA[HLP3985IM5X-3.3/NOPB(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hlp3985im5x-3-3-nopb-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:46:49</pubDate>
	<description><![CDATA[HLP3985IM5X-3.3/NOPB is an efficient linear voltage regulator (LDO) designed in a compact SOT-23-5L package for applications that require stable 3.3V power supply. At a maximum input voltage of 6V, the device provides an output current of up to 0.4A, ensuring long-lasting and stable power support for the device. Its excellent linear performance and low noise characteristics ensure that the output voltage is accurately locked at 3.3V, effectively suppressing power fluctuations. Suitable for mobile devices, embedded systems, microcontroller power supply, and other occasions that have strict requirements for power stability and volume, providing efficient, low noise, and space saving power solutions.]]></description>
</item>
<item>
	<title><![CDATA[HLP5907MFX-1.8(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hlp5907mfx-1-8-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:46:38</pubDate>
	<description><![CDATA[HLP5907MFX-1.8 is a high-precision linear voltage regulator (LDO) designed for low-power systems that require stable 1.8V power supply, using a space saving SOT-23-5L package. At a maximum input voltage of 6V, the device can provide a continuous output current of up to 0.45A, ensuring that the device receives sufficient and stable power support. Its excellent linear adjustment performance and low noise characteristics ensure that the output voltage is always accurately maintained at 1.8V, effectively suppressing power fluctuations and noise. Suitable for handheld devices, portable instruments, digital logic circuit power supply and other occasions that require strict power quality and focus on size optimization, providing efficient, low noise, and miniaturized power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[HLP5907MFX-2.5/NOPB(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hlp5907mfx-2-5-nopb-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:46:27</pubDate>
	<description><![CDATA[HLP5907MFX-2.5/NOPB is an efficient linear voltage regulator (LDO) designed in a small SOT-23-5L package for various applications that require stable 2.5V power supply. At a maximum input voltage of 6V, the device can provide a continuous output current of up to 0.45A, ensuring that the load equipment receives sufficient and stable power supply. Its excellent linear adjustment and low noise characteristics ensure that the output voltage is accurately maintained at 2.5V, effectively suppressing power fluctuations. Suitable for consumer electronics, portable devices, battery power systems, and other occasions that require high volume, efficiency, and power quality, providing cost-effective and low-noise power solutions.]]></description>
</item>
<item>
	<title><![CDATA[HLP5907MFX-2.8/NOPB(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hlp5907mfx-2-8-nopb-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:46:15</pubDate>
	<description><![CDATA[HLP5907MFX-2.8/NOPB is a precision linear voltage regulator (LDO) designed in a compact SOT-23-5L package for low-power applications that require stable 2.8V power supply. At a maximum input voltage of 6V, the device provides an output current of up to 0.45A, ensuring long-lasting and stable power support for the device. Its excellent linear performance and low noise characteristics ensure that the output voltage is accurately locked at 2.8V, effectively suppressing power fluctuations. Suitable for mobile devices, sensor nodes, low-power microprocessors and other occasions that have strict requirements for power stability and volume, providing efficient, low noise, and space saving power solutions.]]></description>
</item>
<item>
	<title><![CDATA[HLP5907MFX-3.0/NOPB(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hlp5907mfx-3-0-nopb-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:46:04</pubDate>
	<description><![CDATA[HLP5907MFX-3.0/NOPB is a high-precision linear voltage regulator (LDO) designed in a small SOT-23-5L package for low-power systems that require stable 3.0V power supply. At a maximum input voltage of 6V, the device can provide a continuous output current of up to 0.45A, ensuring that the equipment receives sufficient and stable power supply. Its excellent linear adjustment performance and low noise characteristics ensure that the output voltage is always accurately maintained at 3.0V, effectively suppressing power fluctuations and noise. Suitable for handheld devices, portable instruments, microprocessors, and other occasions that require strict power quality and focus on size optimization, providing efficient, low noise, and miniaturized power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[HLP5907MFX-3.3/NOPB(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hlp5907mfx-3-3-nopb-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:45:52</pubDate>
	<description><![CDATA[HLP5907MFX-3.3/NOPB is a high-performance linear voltage regulator (LDO) designed in a space saving SOT-23-5L package specifically for low-power applications that require stable 3.3V power supply. At a maximum input voltage of 6V, the device can provide an output current of up to 0.45A, ensuring strong and stable power support for the device. Its excellent linear adjustment and low noise characteristics ensure that the output voltage is accurately maintained at 3.3V, effectively resisting the impact of power fluctuations. Suitable for mobile devices, wearable devices, IoT modules and other occasions that have strict requirements for power quality and volume, providing efficient, compact, and low-noise power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[HMIC5205-5.0YM5-TR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hmic5205-5-0ym5-tr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:45:41</pubDate>
	<description><![CDATA[HMIC5205-5.0YM5-TR is a high voltage linear regulator (LDO) designed for devices that require stable 5V power supply in high-voltage environments, using a miniature SOT-23-5L package. Equipped with a wide input voltage range, capable of operating at a maximum of 22V, providing a continuous output current of up to 0.25A, ensuring stable and sufficient power supply for loads even in high voltage input scenarios. This device has excellent linear adjustment characteristics and low noise performance, ensuring that the output voltage is accurately maintained at 5V and effectively isolating input fluctuations. Suitable for situations such as drones, outdoor equipment, battery management systems, etc. that have strict requirements for power voltage range and stability, providing compact, efficient, and low-noise power solutions.]]></description>
</item>
<item>
	<title><![CDATA[HMIC5225-3.3YM5(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hmic5225-3-3ym5-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:45:30</pubDate>
	<description><![CDATA[HMIC5225-3.3YM5 is a wide voltage input linear voltage regulator (LDO) designed in a small SOT-23-5L package for various applications that require stable 3.3V power supply. Within a wide input voltage range of up to 18V, this device can provide a maximum output current of 0.15A, ensuring reliable and stable power supply for loads even in high input voltage environments. Having excellent linear regulation performance and low noise characteristics, effectively suppressing power fluctuations, and maintaining an output voltage of 3.3V. Suitable for handheld devices, battery chargers, wireless sensors, and other occasions that have high requirements for power voltage range and pay attention to power quality, providing a compact and efficient power management solution.]]></description>
</item>
<item>
	<title><![CDATA[HMIC5504-3.3YM5-TR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hmic5504-3-3ym5-tr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:45:18</pubDate>
	<description><![CDATA[HMIC5504-3.3YM5-TR is an efficient linear voltage regulator (LDO) designed in a compact SOT-23-5L package for various applications that require stable 3.3V power supply. At a maximum input voltage of 6V, the device can provide a continuous output current of up to 0.45A, ensuring that the load equipment receives sufficient and stable power supply. Its excellent linear adjustment and fast response ability ensure that the output voltage is accurately maintained at 3.3V, effectively suppressing power fluctuations and noise. Suitable for consumer electronics, portable devices, battery power systems, and other occasions that require high volume, efficiency, and power quality, providing cost-effective and low-noise power solutions.]]></description>
</item>
<item>
	<title><![CDATA[HTPS76330DBVR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/htps76330dbvr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:45:07</pubDate>
	<description><![CDATA[HTPS76330DBVR is a high-precision linear voltage regulator (LDO) designed in a space saving SOT-23-5 package for low-power systems that require stable 3.0V power supply. It can operate at a maximum input voltage of 12V and provide a maximum output current of 0.15A, ensuring that the equipment receives continuous and stable power supply. This device, with its excellent linear performance and load adjustment ability, effectively suppresses noise and ensures that the output voltage is always accurately maintained at 3.0V. It is particularly suitable for portable devices, sensor nodes, microcontroller power supply and other occasions that require strict power quality requirements, providing efficient, low noise, and miniaturized power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[HTPS76333DBVR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/htps76333dbvr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:44:56</pubDate>
	<description><![CDATA[HTPS76333DBVR is a precision linear voltage regulator (LDO) designed in a compact SOT-23-5L package for low-power applications that require stable 3.3V power supply. Its maximum input voltage can reach 12V, providing a maximum output current of up to 0.15A, ensuring stable power supply. This device has excellent load and line adjustment rate, ensuring that the output voltage accuracy is maintained at 3.3V under various conditions, effectively suppressing power supply noise. Suitable for handheld devices, IoT modules, small electronic devices, and other occasions, providing efficient, low noise, and space saving power solutions.]]></description>
</item>
<item>
	<title><![CDATA[HTPS76350DBVR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/htps76350dbvr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:44:44</pubDate>
	<description><![CDATA[HTPS76350DBVR is a high-performance linear voltage regulator (LDO) designed for applications with limited space and sensitivity to power noise, using an ultra small SOT-23-5L package. This device provides a fixed output voltage of 5V, with excellent linearity and load adjustment rate, ensuring stable and ripple free output voltage. The maximum input voltage is 12V and supports a maximum output current of 0.15A, meeting the power supply requirements of low-power devices. Suitable for mobile devices, consumer electronics, embedded systems and other fields, providing efficient, low noise, and easy to integrate power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[HLM337BTG(TO-220H)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hlm337btg-to-220h-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:44:33</pubDate>
	<description><![CDATA[This linear voltage regulator (LDO) is well-designed and supports a wide range of output voltage regulation from 1.25V to 37V. It can stably provide 1.5A current and has a high voltage withstand capacity of 40V, suitable for various voltage demand scenarios. Its excellent ripple suppression and low dropout characteristics provide stable and pure power supply guarantee for precision circuits, making it an indispensable power management component in high-end electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HLM337IMP/NOPB(SOT-223)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hlm337imp-nopb-sot-223-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:44:22</pubDate>
	<description><![CDATA[This linear voltage regulator (LDO) has high flexibility, with an adjustable output voltage range of 1.25V to 37V, providing stable 1.5A current output, and a withstand voltage of 40V, suitable for a wide range of voltage conversion needs. Its excellent load regulation and low noise characteristics ensure stable power supply to sensitive circuits, making it an ideal choice for high-precision power management applications.]]></description>
</item>
<item>
	<title><![CDATA[HMMBTA06LT1G(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/hmmbta06lt1g-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:35:01</pubDate>
	<description><![CDATA[This NPN type transistor has a rated collector current of 500mA and is suitable for medium current applications. Its collector and emitter breakdown voltage can reach up to 80V, ensuring stable operating performance in high voltage environments. The power loss is only 225mW, which means lower thermal output and improves the applicability of the device in compact design. Suitable for various audio amplifiers, line drivers, and general-purpose switching circuits, it is an ideal component for electronic projects that pursue efficiency and reliability.]]></description>
</item>
<item>
	<title><![CDATA[HMMBT3904WT1G(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/hmmbt3904wt1g-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:34:49</pubDate>
	<description><![CDATA[This NPN transistor has a collector current of 200mA and is suitable for low-power electronic circuits. The breakdown voltage of the collector emitter at 40V provides stable high voltage protection for the circuit. The power consumption is as low as 150mW, ensuring excellent energy efficiency and low-temperature operation, making it very suitable for small signal amplification, logic level conversion, and sensitive circuit applications. It is an ideal choice for designing energy-saving and portable electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[13003(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/13003-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:34:37</pubDate>
	<description><![CDATA[This NPN type transistor has a collector current of 1.5A, suitable for handling medium current tasks. Its outstanding 480V collector breakdown voltage ensures stable operation in high voltage environments and enhances the safety margin of the system. The high-power processing capacity of 25W indicates its outstanding performance in high-power applications. Suitable for high voltage amplification, power conversion, and situations that require high voltage resistance and strong driving ability, it is the preferred component for building high-performance electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HCG65140DBA(DFN5X6)]]></title>
	<category domain="http://www.hxymos.com/en/gan-hemt/">GaN HEMT</category>
	<link><![CDATA[http://www.hxymos.com/en/gan-hemt/hcg65140dba-dfn5x6-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:09:39</pubDate>
	<description><![CDATA[This carefully selected gallium nitride field-effect transistor adopts advanced N-channel design and operates at a drain source voltage of up to 650V, capable of carrying a continuous high current of 17A, with excellent performance. Its conduction resistance is as low as 100 milliohms, ensuring extremely low conduction loss and efficient energy conversion. This device is an ideal choice for high power density and high-frequency applications, especially suitable for modern electronic designs that pursue ultimate efficiency, injecting efficient power into your innovative projects.]]></description>
</item>
<item>
	<title><![CDATA[HCG65140DAA(DFN8X8)]]></title>
	<category domain="http://www.hxymos.com/en/gan-hemt/">GaN HEMT</category>
	<link><![CDATA[http://www.hxymos.com/en/gan-hemt/hcg65140daa-dfn8x8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:09:27</pubDate>
	<description><![CDATA[We offer you high-performance gallium nitride field-effect transistors with advanced N-channel design. This device has a high drain source voltage tolerance of 650V and a continuous drain current of up to 17A, meeting high power requirements. More noteworthy is its 100 milliohm low conductivity resistance, which ensures smooth current flow while significantly reducing energy consumption and improving system efficiency. Adapted to various high-efficiency power conversion solutions, it brings unprecedented speed and energy efficiency ratio to your innovative electronic products, leading the green upgrade of technology.]]></description>
</item>
<item>
	<title><![CDATA[HCG65200DBA(DFN5X6)]]></title>
	<category domain="http://www.hxymos.com/en/gan-hemt/">GaN HEMT</category>
	<link><![CDATA[http://www.hxymos.com/en/gan-hemt/hcg65200dba-dfn5x6-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:09:16</pubDate>
	<description><![CDATA[We recommend the N-channel field-effect transistor with the new generation gallium nitride technology, which has achieved a breakthrough combination of 650V high voltage resistance and 10A continuous drain current. Its low conductivity resistance of 160 milliohms optimizes power conversion efficiency while ensuring high efficiency. This device is specifically designed for high-efficiency power conversion and fast switching applications, and is an ideal component for pursuing high-performance and compact design. Choose it to inject strong momentum into your innovative electronic project.]]></description>
</item>
<item>
	<title><![CDATA[HCG65200DAA(DFN8X8)]]></title>
	<category domain="http://www.hxymos.com/en/gan-hemt/">GaN HEMT</category>
	<link><![CDATA[http://www.hxymos.com/en/gan-hemt/hcg65200daa-dfn8x8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:09:04</pubDate>
	<description><![CDATA[Bringing you innovative gallium nitride field-effect transistors with advanced single N-channel design. This device can withstand a drain source voltage of up to 650V, making it suitable for high voltage applications. Its continuous drain current capacity reaches 10 amperes, ensuring efficient energy transfer. Especially outstanding is that the conduction resistance as low as 160 milliohms significantly reduces conduction loss and improves system energy efficiency under specific gate voltage and drain current. Whether pursuing speed or energy efficiency in modern electronic design, it is an ideal high-performance choice to help your innovative projects reach new heights.]]></description>
</item>
<item>
	<title><![CDATA[HAONR21321(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/haonr21321-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:07:03</pubDate>
	<description><![CDATA[This MOSFET is designed for low voltage applications and has a withstand voltage of 30V, ensuring safe use in light loads and battery powered equipment. The maximum internal resistance is only 13 milliohms, which optimizes signal transmission speed and energy efficiency. The current driving capability of 50 amperes is suitable for driving circuits with moderate current requirements, making it an ideal component for improving energy efficiency and miniaturization design in the fields of consumer electronics and portable devices.]]></description>
</item>
<item>
	<title><![CDATA[16N65(TO-263)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/16n65-to-263-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:06:39</pubDate>
	<description><![CDATA[This N-channel MOSFET is the preferred device for high-voltage applications, with a drain source voltage withstand voltage of 650V and a continuous drain current carrying capacity of 16A, ensuring stable performance in high-voltage environments. The low conductivity resistance design of 450 milliohms effectively improves circuit efficiency and reduces energy consumption. Suitable for high-voltage power converters, LED drives, and high-end household appliances, providing efficient and reliable current control solutions for your devices.]]></description>
</item>
<item>
	<title><![CDATA[16N65F(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/16n65f-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:06:27</pubDate>
	<description><![CDATA[This N-channel MOSFET is designed specifically for high voltage applications, with a drain source voltage capacity of 650V and a continuous drain current capacity of 16A, meeting the requirements under harsh working conditions. A 480 milliohm conducting resistor maintains high efficiency and stability in high-power operations. Suitable for solar energy systems, high-voltage lighting control, and high-quality power management, it is an ideal choice for pursuing high efficiency and long-term reliability.]]></description>
</item>
<item>
	<title><![CDATA[45P03(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/45p03-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:06:16</pubDate>
	<description><![CDATA[High performance P-channel MOSFET, specifically designed for low voltage and high current applications. With a withstand voltage of 30V and a continuous drain current of up to 45A, it is an ideal choice for driving circuits and load switching. Ultra low conductivity resistance of 9.3 milliohms ensures fast switching and efficient performance. Suitable for battery protection, DC-DC conversion, and high-efficiency consumer electronic devices, bringing ultimate energy efficiency and response speed to your design.]]></description>
</item>
<item>
	<title><![CDATA[SWF13N50(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/swf13n50-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:06:04</pubDate>
	<description><![CDATA[This N-channel MOSFET is the preferred choice for medium voltage applications, with a rated drain source voltage of 50V and sustainable carrying of 13A drain current, suitable for various medium power demand scenarios. A conducting resistance of 400 milliohms ensures good circuit efficiency and reduces energy consumption. Suitable for smart home devices, audio amplifiers, and computer peripheral power supply systems, providing efficient and stable current control solutions for your electronic products.]]></description>
</item>
<item>
	<title><![CDATA[SWF20N65(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/swf20n65-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:05:52</pubDate>
	<description><![CDATA[High performance N-channel MOSFET, designed specifically for high voltage environments, with a withstand voltage of up to 650V and support for 20A continuous drain current, is an ideal choice for energy-efficient power conversion and motor control applications. A 400 milliohm conducting resistor maintains low power consumption even under high current operation. Suitable for solar inverters, high-voltage LED lighting, and high-end home appliance control panels, providing stable and reliable current control solutions for your equipment.]]></description>
</item>
<item>
	<title><![CDATA[20N50(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/20n50-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:05:40</pubDate>
	<description><![CDATA[This N-channel MOSFET is designed for use in the medium and low voltage field, with a 50V drain source withstand voltage and a 20A high current processing capacity, perfectly matching power conversion and high-efficiency electronic equipment requirements. A low conduction resistance of 260 milliohms ensures smooth current flow while reducing heat generation, improving overall energy efficiency of the system. Widely applicable to consumer electronics, chargers, and energy storage systems, it is a carefully selected component for building reliable and efficient circuits.]]></description>
</item>
<item>
	<title><![CDATA[18N50F(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/18n50f-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:05:28</pubDate>
	<description><![CDATA[This N-channel MOSFET is suitable for medium voltage circuits and has a rated drain source voltage of 50V. It can handle strong 18A continuous drain current and is particularly suitable for power conversion and battery management applications. Its conduction resistance is only 300 milliohms, which helps to reduce energy loss and improve system efficiency. Suitable for various consumer electronics, mobile devices, and DC-DC converters, it is an ideal semiconductor solution for pursuing high efficiency and miniaturization design.]]></description>
</item>
<item>
	<title><![CDATA[2SK3019(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/2sk3019-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:05:05</pubDate>
	<description><![CDATA[This N-channel MOSFET is an ideal choice for lightweight and portable devices. It has a drain source breakdown voltage of 30V and supports continuous 100mA drain current, making it very suitable for low-power application scenarios. Conducting a resistance of 8 Ω ensures good signal transmission and power management efficiency. Suitable for precision electronics, consumer electronics products, and small circuit projects, it is a sophisticated component for optimizing energy efficiency and space utilization.]]></description>
</item>
<item>
	<title><![CDATA[4N65F(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/4n65f-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 05:04:53</pubDate>
	<description><![CDATA[Efficient 1N channel MOSFET designed specifically for high voltage and low power applications. This semiconductor device has a high voltage resistance of 650V and can withstand continuous 4A drain current, making it an ideal choice. The conduction resistance is only 2.22 Ω, ensuring excellent electrical energy conversion efficiency and temperature control. Suitable for various precision circuits, power management, and high-performance electronic devices, it is the preferred component for improving system efficiency.]]></description>
</item>
<item>
	<title><![CDATA[HC3M001K170J(TO-263-7L)]]></title>
	<category domain="http://www.hxymos.com/en/sgt-mosfet/">SiC MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/sgt-mosfet/hc3m001k170j-to-263-7l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:59:45</pubDate>
	<description><![CDATA[This silicon carbide MOS device is designed for extreme voltage environments and has an ultra-high 1700V withstand voltage, ensuring stability and safety in high voltage systems. Although the internal resistance is high, with a maximum of 1000 milliohms, it is still suitable for precision applications that do not require high current requirements and need to withstand extreme voltage challenges. Providing a current capacity of 6 amperes is an ideal choice for pursuing reliability and durability in special high-voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[HC3M00160120D(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/sgt-mosfet/">SiC MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/sgt-mosfet/hc3m00160120d-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:59:33</pubDate>
	<description><![CDATA[This silicon carbide MOSFET is specially designed for high voltage scenarios, with a withstand voltage level of 1200V, ensuring stable operation under harsh conditions. Despite having a high internal resistance of up to 160 milliohms, it is still suitable for applications that require high voltage support but are less sensitive to current. Providing a current capacity of 17 amperes, suitable for specific high-efficiency circuit designs, ensuring reliable power control in specific configurations.]]></description>
</item>
<item>
	<title><![CDATA[HC3M0015120K(TO-247-4L)]]></title>
	<category domain="http://www.hxymos.com/en/sgt-mosfet/">SiC MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/sgt-mosfet/hc3m0015120k-to-247-4l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:59:21</pubDate>
	<description><![CDATA[This silicon carbide MOS device is specifically designed for high voltage applications, with a withstand voltage of up to 1200V, providing excellent electrical isolation performance. Its internal resistance is only 15 milliohms maximum, ensuring extremely low conduction loss and improving the overall efficiency of the system. The high current carrying capacity of 117 amperes provides a solid foundation for high-power density design, making it an ideal choice for pursuing ultimate energy efficiency and miniaturization solutions.]]></description>
</item>
<item>
	<title><![CDATA[HC3M0045065K1(TO-247-4L)]]></title>
	<category domain="http://www.hxymos.com/en/sgt-mosfet/">SiC MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/sgt-mosfet/hc3m0045065k1-to-247-4l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:59:10</pubDate>
	<description><![CDATA[This silicon carbide MOS component is optimized for high energy efficiency power conversion, with a withstand voltage of up to 650V, ensuring excellent circuit protection. The internal resistance is as low as the maximum value of 45 milliohms, which helps to improve energy efficiency and reduce heat generation. The maximum current carrying capacity of 49 amperes is carefully designed for medium current applications, perfectly integrating power and efficiency, making it the preferred component for creating a new generation of green electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HC3M0045065D(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/sgt-mosfet/">SiC MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/sgt-mosfet/hc3m0045065d-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:58:58</pubDate>
	<description><![CDATA[This silicon carbide MOS device is specially designed for high-performance power management systems, with a withstand voltage level of 650V, ensuring the safety margin of system operation. The maximum internal resistance is only 45 milliohms, which optimizes the conductivity and helps to reduce power consumption. Providing a continuous current carrying capacity of 49 amperes, suitable for medium power applications, balancing power and efficiency requirements, it is an ideal component for modern high-performance electronic product design.]]></description>
</item>
<item>
	<title><![CDATA[HC3M0030065K(TO-247-4L)]]></title>
	<category domain="http://www.hxymos.com/en/sgt-mosfet/">SiC MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/sgt-mosfet/hc3m0030065k-to-247-4l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:58:46</pubDate>
	<description><![CDATA[This silicon carbide MOS device is designed for efficient power conversion and has a 650V withstand voltage capability, ensuring stable operation in high voltage environments. Its internal resistance is as low as a maximum of 30 milliohms, which helps to reduce energy loss and improve system efficiency. Supporting a current carrying capacity of up to 97 amperes, it is very suitable for applications that require high current processing and fast switching, and is an ideal choice for pursuing energy efficiency and reliability.]]></description>
</item>
<item>
	<title><![CDATA[HC3D25170H(TO-247-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc3d25170h-to-247-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:50:04</pubDate>
	<description><![CDATA[This silicon carbide diode has achieved a breakthrough operating voltage of 1700V, while providing a high current processing capacity of 25A, coupled with a low forward voltage drop of 1.4V, making it a leader in high voltage and high-power applications. It perfectly integrates high voltage resistance, strong current carrying capacity, and high efficiency characteristics, making it the preferred device for advanced power technology and energy system upgrades.]]></description>
</item>
<item>
	<title><![CDATA[HC3D10120G(TO-263)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc3d10120g-to-263-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:49:52</pubDate>
	<description><![CDATA[This 1200V silicon carbide diode has a current carrying capacity of 10A and a forward voltage drop of only 1.4V, combining high voltage, high current, and low loss characteristics. It is suitable for high demand power conversion and management fields, can significantly improve system efficiency and long-term stability, and is a key component of modern efficient electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[HC3D10120E(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc3d10120e-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:49:40</pubDate>
	<description><![CDATA[This high-performance silicon carbide diode has a voltage level of 1200V and can withstand a large current of 10A. The forward voltage drop is controlled at 1.4V, demonstrating superior energy conversion efficiency and reliability. Especially suitable for high power density and demanding power systems, it is the preferred solution to improve system efficiency and reduce energy consumption.]]></description>
</item>
<item>
	<title><![CDATA[HC3D05120E(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc3d05120e-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:49:28</pubDate>
	<description><![CDATA[This 1200V silicon carbide diode is designed specifically for high voltage environments and can withstand a continuous current of 5A. Its forward voltage is reduced to 1.4V, ensuring high efficiency and stability under high voltage operating conditions. Suitable for precision electronic equipment that requires high voltage resistance and good thermal management, it is an ideal component for achieving efficient power conversion systems.]]></description>
</item>
<item>
	<title><![CDATA[HC3D02120E(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc3d02120e-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:49:16</pubDate>
	<description><![CDATA[This silicon carbide diode is specially designed for high voltage and low current applications, with a withstand voltage of 1200V. Although the current rating is 2A, its forward voltage drop is only 1.4V, demonstrating excellent voltage endurance and energy efficiency. It is very suitable for precision circuits and situations that require strict voltage control, and is the preferred component for high-performance and low-power design.]]></description>
</item>
<item>
	<title><![CDATA[HC3D40065D1(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc3d40065d1-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:49:04</pubDate>
	<description><![CDATA[This silicon carbide diode has excellent performance, with a working voltage of up to 650V, capable of handling continuous 40A current. Its excellent forward voltage is reduced to 1.3V, ensuring high efficiency and low heat dissipation in high-power applications. Suitable for contemporary electronic product design that requires high reliability and energy efficiency, it is an ideal component for improving system efficiency.]]></description>
</item>
<item>
	<title><![CDATA[HC3D30065D1(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc3d30065d1-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:48:53</pubDate>
	<description><![CDATA[This silicon carbide diode is designed for high-efficiency power conversion, with a withstand voltage of 650V and the ability to withstand a stable current of 30A. Its ultra-low forward voltage drop is only 1.3V, which helps reduce energy loss and improve overall system performance. Suitable for application scenarios that pursue the ultimate energy efficiency ratio, it is an ideal choice in modern high-efficiency electrical appliances and energy management systems.]]></description>
</item>
<item>
	<title><![CDATA[HC3D30065H(TO-247-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc3d30065h-to-247-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:48:41</pubDate>
	<description><![CDATA[This silicon carbide diode is a high-performance solution for high-power applications, with a withstand voltage of 650V to ensure stable operation in high-voltage systems, and a high current processing capacity of 30A to meet the most demanding power requirements. Its outstanding 1.3V low forward voltage drop characteristics effectively improve energy utilization efficiency, especially suitable for precision electronic designs that require high energy efficiency conversion.]]></description>
</item>
<item>
	<title><![CDATA[HC3D20065D1(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc3d20065d1-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:48:29</pubDate>
	<description><![CDATA[This silicon carbide diode is designed specifically for high current applications, with a withstand voltage of 650V and the ability to withstand strong currents of 20A, ensuring high reliability. Its forward voltage is reduced to 1.3V, greatly improving the efficiency of energy conversion, reducing energy consumption and heat generation, making it an ideal choice for high-performance power systems and energy efficiency optimization solutions.]]></description>
</item>
<item>
	<title><![CDATA[HC3D16065D(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc3d16065d-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:48:17</pubDate>
	<description><![CDATA[This silicon carbide diode adopts a dual parallel design, with a withstand voltage of 650V per circuit, and can carry a total of up to 16A current, making it particularly suitable for applications that require high current processing capabilities. Its forward voltage drop is only 1.3V, effectively improving energy efficiency and reducing heat loss during operation, making it an indispensable component for building efficient and compact power systems.]]></description>
</item>
<item>
	<title><![CDATA[HC3D16065A(TO-220H-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc3d16065a-to-220h-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:48:05</pubDate>
	<description><![CDATA[This silicon carbide diode is the preferred choice for high-power applications, with a 650V withstand voltage level ensuring stable performance in high-voltage circuits. It supports a high current of up to 16A and reduces the forward voltage to 1.3V, which means it can significantly reduce energy consumption and improve overall system efficiency in high-power conversion. It is a key component for improving energy efficiency in advanced electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[HC3D12065G(TO-263)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc3d12065g-to-263-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:47:54</pubDate>
	<description><![CDATA[This silicon carbide diode is designed specifically for high-power applications, with a reliable and durable withstand voltage of 650V, and a high current carrying capacity of 12A to meet a wider range of system requirements. Its forward voltage is reduced to 1.3V, ensuring efficient energy conversion and low-temperature operation, which is a key component for improving the energy efficiency and reliability of modern electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[HC3D10065G(TO-263)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc3d10065g-to-263-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:47:42</pubDate>
	<description><![CDATA[This silicon carbide diode is specially designed for high-efficiency power systems, with a high voltage withstand characteristic of 650V and can withstand a large current of 10A. In addition, its excellent 1.3V low forward voltage drop greatly improves energy conversion efficiency. It is an ideal component for achieving high efficiency and low temperature rise circuit design, suitable for various high-performance electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HC3D10065E(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc3d10065e-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:47:30</pubDate>
	<description><![CDATA[This silicon carbide diode is optimized for high-power applications and has a withstand voltage of 650V, ensuring reliability under harsh voltage conditions. The 10A high current processing capacity combined with a low forward voltage drop of only 1.3V marks its efficient performance in current conversion, making it the best choice for pursuing ultimate energy efficiency and thermal management solutions.]]></description>
</item>
<item>
	<title><![CDATA[HC3D08065A(TO-220H-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc3d08065a-to-220h-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:47:18</pubDate>
	<description><![CDATA[This silicon carbide diode is an ideal choice for high voltage applications, with a 650V withstand voltage ensuring stable operation in high voltage environments. It can handle a high current of 8A, combined with a forward voltage drop as low as 1.3V, significantly improving the energy efficiency of the circuit and reducing heating issues, making it very suitable for modern electronic designs with high power density and efficient energy conversion.]]></description>
</item>
<item>
	<title><![CDATA[HC3D06065E(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc3d06065e-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:47:06</pubDate>
	<description><![CDATA[This silicon carbide diode is designed specifically for high-performance applications, with a high voltage resistance of 650V and the ability to withstand a strong current of 6A. Its excellent 1.3V low forward voltage drop characteristic significantly reduces energy loss and improves system efficiency. It is the preferred component for high energy efficiency power management and precision circuits.]]></description>
</item>
<item>
	<title><![CDATA[HC3D06065A(TO-220H-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc3d06065a-to-220h-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:46:54</pubDate>
	<description><![CDATA[This silicon carbide diode is the preferred choice for high-efficiency power conversion, with a stable and reliable withstand voltage of 650V and a high current carrying capacity of 6A to meet higher power requirements. Its outstanding 1.3V low forward voltage drop characteristics ensure extremely high efficiency and low-temperature operation in power conversion, making it very suitable for high-performance electronic systems with strict requirements.]]></description>
</item>
<item>
	<title><![CDATA[HC3D04065E(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc3d04065e-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:46:43</pubDate>
	<description><![CDATA[This silicon carbide diode is specially designed for efficient power supply solutions, with a withstand voltage of up to 650 volts, supporting a continuous current of 4 amperes, and a low forward voltage drop of only 1.3 volts, effectively improving energy efficiency and reducing heat output. It is the preferred component for building high energy efficiency and compact electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HC3D04065A(TO-220H-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc3d04065a-to-220h-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:46:31</pubDate>
	<description><![CDATA[This silicon carbide diode is designed for high-efficiency applications, with a withstand voltage of 650V and the ability to withstand a stable current of 4A. It has an ultra-low forward voltage drop of 1.3V, ensuring excellent energy conversion performance and reducing power consumption. It is suitable for modern circuit systems that pursue ultimate energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[HBZV55-C5V6(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/hbzv55-c5v6-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:40:44</pubDate>
	<description><![CDATA[We recommend this high-performance 5.6V voltage regulator diode to you, which stands out for its excellent voltage stability. The nominal voltage stabilization value is 5.6V, with a wide working range (5.2V~6V), ensuring diverse application scenarios. The reverse current of only 1 microampere reflects its efficient and energy-saving design concept. With a power processing capacity of up to 500 milliwatts, it is not only suitable for standard requirements, but also meets some high-power applications, becoming a stable energy cornerstone in various electronic development projects. From precision instruments to high-end audio systems, it can be easily handled, adding a solid guarantee to your innovative design.]]></description>
</item>
<item>
	<title><![CDATA[HMM3Z5V6T1G(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/hmm3z5v6t1g-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:40:32</pubDate>
	<description><![CDATA[The carefully crafted 5.6V voltage regulator diode is your preferred choice for circuit protection and voltage regulation. The nominal voltage stabilization value is 5.6V, with a wide working range of 5.2V to 6V, ensuring stable voltage output and wide compatibility. 1 microampere ultra-low reverse current design greatly improves energy efficiency. The 200 milliwatt power processing capability perfectly matches various low-power electronic devices, such as smart wearables, wireless sensors, etc. To provide a sustainable and stable energy pillar for your innovative electronic projects, ensuring smooth and unobstructed equipment operation.]]></description>
</item>
<item>
	<title><![CDATA[HMM3Z5V1T1G(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/hmm3z5v1t1g-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:40:21</pubDate>
	<description><![CDATA[The 5.1V voltage regulator diode presented to you features high precision and low energy consumption as its core advantages. The voltage stabilization value is stable at 5.1V, with a fine adjustment range of 4.8V~5.4V, suitable for a wide range of voltage requirements. A reverse current of only 2 microamperes ensures excellent energy efficiency performance. Although the power is 200 milliwatts, it is sufficient to meet the needs of numerous handheld devices and low-power circuits, making it an ideal component choice in fields such as mobile communication and smart homes. Provide a compact and reliable voltage stabilization solution for your creative electronic design.]]></description>
</item>
<item>
	<title><![CDATA[HMM3Z3V3T1G(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/hmm3z3v3t1g-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:40:09</pubDate>
	<description><![CDATA[This 3.3V voltage regulator diode is an ideal choice for low voltage applications. Its stable voltage value is accurate to 3.3V, and the working range is tightly controlled between 3.1V and 3.5V, ensuring high voltage stability. The low reverse current characteristic of 5 microamperes improves energy utilization efficiency. Under compact design, it still provides a power output of 200 milliwatts, which is very suitable for the power needs of various consumer electronics, mobile devices, and microcontrollers, providing an efficient and stable energy cornerstone for your small electronic product project.]]></description>
</item>
<item>
	<title><![CDATA[HMM3Z15VT1G(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/hmm3z15vt1g-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:39:57</pubDate>
	<description><![CDATA[This selected 15V voltage regulator diode is renowned for its high precision and low power consumption. The voltage stabilization range is cleverly controlled between 14.3V and 15.8V, ensuring stable and flexible voltage output. The 50 nanoampere ultra-low reverse current design reduces energy consumption to a lower level. Despite having a power of 200 milliwatts, it is still an ideal choice for small electronic devices and sensitive circuits, such as precision measurement tools or portable electronic devices. Add an efficient and reliable power guardian to your innovative project.]]></description>
</item>
<item>
	<title><![CDATA[HMMSZ5242BT1G(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/hmmsz5242bt1g-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:39:45</pubDate>
	<description><![CDATA[This 12V voltage regulator diode is known for its excellent voltage stability, with a precision range of 11.4V~12.6V to ensure accurate and reliable power supply. The reverse current design, as low as 1 microampere, greatly improves energy efficiency. Equipped with 500 milliwatts of high-power processing performance, suitable for a wide range of applications including precision electronic instruments and high-end audio devices, providing continuous and pure power support for your equipment. Choose it to inject a strong and stable energy core into your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[HBZT52C18T1G(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/hbzt52c18t1g-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:39:33</pubDate>
	<description><![CDATA[We introduce this high-performance voltage regulator diode, which has a precise nominal voltage regulation value of 18V and a wide operating range, ensuring stable output voltage between 16.8V and 19.1V. The ultra-low reverse current is only 100 nanoamperes, greatly improving the efficiency and reliability of the circuit. Equipped with a 500 milliwatt power processing capability, suitable for various precision electronic applications, such as advanced communication devices and high-quality power management modules. It is an essential component for building efficient and durable power systems, providing protection for your electronic innovation projects.]]></description>
</item>
<item>
	<title><![CDATA[HBZV55-C5V1(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/hbzv55-c5v1-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:39:22</pubDate>
	<description><![CDATA[This precision voltage regulator diode brings you a stable 5.1V power supply solution. It has excellent voltage stability, with a finely controlled operating range between 4.8V and 5.4V, ensuring the smooth operation of the circuit. The reverse current design, as low as 2 microamperes, effectively improves energy efficiency. The compact body has a power processing capacity of 500 milliwatts, making it very suitable for precision electronic projects that require efficient and stable power supplies. Whether it‘s precision instruments or high-end audio equipment, it‘s the ideal choice to provide your device with a continuous and reliable source of energy.]]></description>
</item>
<item>
	<title><![CDATA[HBZV55-C3V6(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/hbzv55-c3v6-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:39:10</pubDate>
	<description><![CDATA[This voltage regulator diode accurately outputs a voltage of 3.6V, with a stable range between 3.4V and 3.8V, providing reliable power supply for precision circuits. The reverse leakage current is as low as 2uA, ensuring extremely low power loss. Rated power of 500mW, suitable for voltage stabilization needs of various medium and low power electronic devices, such as handheld devices, sensor modules, and portable electronic products. It is the preferred component to improve system stability and energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[HBZV55-C3V3(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/hbzv55-c3v3-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:38:58</pubDate>
	<description><![CDATA[This voltage regulator diode accurately outputs a stable voltage of 3.3V, with a range controlled between 3.1V and 3.5V, ensuring precise power supply for the circuit. The ultra-low reverse current is only 2uA, effectively reducing energy consumption. A power processing capacity of 500mW, suitable for various medium and low power consumption needs. Suitable for voltage stabilization in mobile devices, embedded systems, and battery powered products, it is an ideal choice to ensure circuit stability and extend battery life.]]></description>
</item>
<item>
	<title><![CDATA[HBAT54XV2T1G(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/hbat54xv2t1g-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:32:42</pubDate>
	<description><![CDATA[This product is an independent Schottky diode, with a forward voltage reduced to 400mV, ensuring efficient power conversion and energy-saving performance. The DC reverse withstand voltage is 30V, providing reliable protection to prevent reverse voltage damage. Although the rectification current is 200mA, it exhibits excellent performance in low-power electronic devices such as Bluetooth earphones, smartwatches, and small charging circuits, making it an ideal component for pursuing miniaturization and high-efficiency design, providing powerful power for your innovative electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HBAT54HT1G(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/hbat54ht1g-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:32:30</pubDate>
	<description><![CDATA[This independently packaged Schottky diode has a forward voltage drop of only 800mV, ensuring excellent energy conversion efficiency. Equipped with 30V DC reverse withstand voltage capability, providing stable protection for the circuit. Although the average rectification current is 200mA, its compact size and high efficiency make it the preferred choice for small electronic devices, signal processing, and low-power applications, such as wireless headphones, wearable devices, and high-efficiency power modules, adding high efficiency and reliability to your precision electronic design.]]></description>
</item>
<item>
	<title><![CDATA[DSS34(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/dss34-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:32:19</pubDate>
	<description><![CDATA[This independent Schottky diode achieves efficient power conversion and reduces energy loss with an ultra-low forward voltage drop of 550mV. The DC reverse withstand voltage is 40V, ensuring the stability and safe operation of the circuit. The average rectification current capability of 3A is suitable for medium and low power electronic devices, such as small chargers, portable electronic devices, and energy management systems. It is an ideal component for improving device energy efficiency and extending battery life, adding a reliable high-performance guarantee to your electronic product design.]]></description>
</item>
<item>
	<title><![CDATA[HMBRF20100CT(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/hmbrf20100ct-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:32:08</pubDate>
	<description><![CDATA[Let me introduce you to this efficient Schottky diode, which adopts a 1-pair common cathode design, optimizes circuit layout, and improves system compactness. 850mV forward voltage drop, achieving fast conduction while ensuring energy efficiency. The DC reverse withstand voltage strength reaches 100V, providing a reliable protective barrier for your circuit. Supporting an average rectification current of 10A, suitable for medium power applications such as power adapters, LED drives, and high-end consumer electronics products, it is the best choice for pursuing high efficiency and stable output.]]></description>
</item>
<item>
	<title><![CDATA[HMBRF30100CT(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/hmbrf30100ct-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:31:56</pubDate>
	<description><![CDATA[This Schottky diode features a unique 1-pair common cathode design, which enhances the integration and efficiency of the circuit. A forward voltage drop of 820mV performs excellently in high-energy applications. Its DC reverse withstand voltage capability reaches 100V, ensuring circuit protection under complex voltage conditions. With an average rectified current capacity of 15A, it can meet many medium to high power demand scenarios, such as power converters, high-end audio amplifiers, and fast charging solutions. It is an ideal partner for electronic design that emphasizes both efficiency and stability.]]></description>
</item>
<item>
	<title><![CDATA[HMBRF40100CT(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/hmbrf40100ct-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:31:45</pubDate>
	<description><![CDATA[This Schottky diode innovatively adopts a 1-pair common cathode structure, optimizing circuit layout and simplifying applications. Despite a forward voltage drop of 820mV, it still maintains efficient operation. The DC reverse withstand voltage can reach up to 100V, ensuring stability and durability in high voltage environments. Its average rectified current processing capacity of 20A is suitable for high-power applications such as high-end power supply, servers, and high-performance charging systems, making it the preferred component for achieving efficient energy conversion in demanding electronic designs.]]></description>
</item>
<item>
	<title><![CDATA[HMBRF1045CT(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/hmbrf1045ct-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:31:34</pubDate>
	<description><![CDATA[This Schottky diode is designed with one pair of common cathodes, optimizing the circuit structure and enhancing integration. A low forward voltage drop of 650mV means lower energy loss and efficient energy conservation. 45V DC reverse withstand voltage ensures good electrical insulation performance and circuit safety. Providing an average rectification current of 5A, suitable for electronic devices with medium power requirements, such as DC-DC converters, battery chargers, and high-quality audio devices, is an ideal component for pursuing high efficiency and miniaturization design.]]></description>
</item>
<item>
	<title><![CDATA[HMBRF2045CT(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/hmbrf2045ct-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:31:22</pubDate>
	<description><![CDATA[This Schottky diode adopts a 1 pair common cathode configuration to optimize circuit design and improve work efficiency. 650mV low forward voltage drop ensures excellent energy conversion efficiency. Its DC reverse withstand voltage reaches 45V, providing reliable protection for the circuit. Supporting an average rectification current of 10A, it meets the needs of various medium to high power applications, especially suitable for efficient power management, solar devices, and high-end consumer electronics. It is an ideal semiconductor solution that pursues energy efficiency and stability.]]></description>
</item>
<item>
	<title><![CDATA[HMBRF3045CT(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/hmbrf3045ct-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:31:11</pubDate>
	<description><![CDATA[This high-performance Schottky diode adopts a 1-pair common cathode design, simplifying the circuit layout and improving assembly efficiency. The forward voltage drop is only 650mV, ensuring low-power operation and efficient energy conversion. Equipped with 45V DC reverse withstand voltage capability, ensuring the stability and safety of the circuit. Especially outstanding is that it supports an average rectification current of up to 15A, making it ideal for high-power applications such as server power supplies, battery charging systems, and high-efficiency electrical equipment. It is an ideal choice for users who pursue excellent energy efficiency and current carrying capacity.]]></description>
</item>
<item>
	<title><![CDATA[SB2045L(TO-277)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/sb2045l-to-277-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:31:00</pubDate>
	<description><![CDATA[This Schottky diode adopts a 1 pair common cathode design, which optimizes the efficiency and installation convenience of the circuit. Having a low forward voltage drop of only 520mV ensures minimal energy loss and improves system efficiency. Its 45V DC reverse withstand voltage capability ensures a wide range of voltage adaptability and circuit protection. With an average rectification current processing capacity of up to 10A, it is suitable for high-power applications, such as high-efficiency power conversion, solar charging systems, and high-end consumer electronics. It is an ideal component for pursuing high efficiency and stability.]]></description>
</item>
<item>
	<title><![CDATA[HBAV99WT1G(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/hbav99wt1g-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:30:48</pubDate>
	<description><![CDATA[This high-performance switching diode adopts a unique configuration of 1 pair in series, specifically designed for circuits that pursue high-speed response and high efficiency. It has a high DC reverse withstand voltage of 100V, ensuring stable operation in high voltage environments. Excellent 6ns reverse recovery time allows for faster and smoother signal switching, reducing energy consumption and heat generation. Supporting an average rectification current of 200mA, it is suitable for high efficiency requirements in precision electronics, communication, and consumer electronics products, and is an ideal component for creating fast and reliable circuit designs.]]></description>
</item>
<item>
	<title><![CDATA[HSN74LVC1G14DBVR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/inverter/">Inverter</category>
	<link><![CDATA[http://www.hxymos.com/en/inverter/hsn74lvc1g14dbvr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:15:37</pubDate>
	<description><![CDATA[This single channel Schmitt trigger inverter has a wide voltage range (1.65V-5.5V) and is suitable for various power supply environments. It has extremely low static power consumption and a maximum of 10 microamperes. Its uniqueness lies in its Schmidt triggering characteristics, which can effectively filter out noise, achieve signal waveform shaping, and improve circuit stability. Suitable for precision circuit design such as signal processing, pulse shaping, and threshold detection, especially suitable for low-power electronic products and sensitive signal processing applications, adding reliability and precision to your design.]]></description>
</item>
<item>
	<title><![CDATA[HSN74LVC1G08DBVR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/inverter/">Inverter</category>
	<link><![CDATA[http://www.hxymos.com/en/inverter/hsn74lvc1g08dbvr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:15:27</pubDate>
	<description><![CDATA[This single channel and gate inverter is designed for low-power applications, with a working voltage range of 1.65V to 5.5V, ensuring stable operation in diverse voltage environments. Its static current is only up to 10 microamperes, which helps reduce energy consumption and extend device endurance. As the basic building block of logic circuits, it efficiently executes logic and signals in reverse, making it very suitable for fields such as mobile communication, handheld devices, and wearable technology. With a compact body, it realizes complex logic functions and provides powerful and flexible support for your electronic design.]]></description>
</item>
<item>
	<title><![CDATA[HSN74LVC1G04DBVR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/inverter/">Inverter</category>
	<link><![CDATA[http://www.hxymos.com/en/inverter/hsn74lvc1g04dbvr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:15:17</pubDate>
	<description><![CDATA[This non gate inverter chip integrates single channel logic non functionality, with a wide voltage range of 1.65V to 5.5V, meeting the needs of low-voltage applications. With its ultra-low power consumption characteristics, the maximum static current is only 10 microamperes, making it particularly suitable for battery powered devices. This device can reliably perform signal inversion operations and is an ideal component for small electronic projects, portable devices, and energy-saving designs. It adds flexibility and convenience to digital circuit design with its simplicity and efficiency.]]></description>
</item>
<item>
	<title><![CDATA[HSN74LVC1G00DBVR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/inverter/">Inverter</category>
	<link><![CDATA[http://www.hxymos.com/en/inverter/hsn74lvc1g00dbvr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:15:07</pubDate>
	<description><![CDATA[This compact NAND gate inverter is exquisitely designed with only one channel, and has a wide operating voltage range from 1.65V to 5.5V, perfectly meeting the needs of low-power applications. The static current is extremely low, with a maximum of only 10 microamperes, effectively extending the battery life. It plays a crucial role in signal reversal in logic circuit design, suitable for mobile devices, wearable technology, and IoT devices. With efficient logic processing capabilities, it promotes the simplification and optimization of circuit design, making it an intelligent choice for modern electronic innovation.]]></description>
</item>
<item>
	<title><![CDATA[PC817B(DIP-4)]]></title>
	<category domain="http://www.hxymos.com/en/optocoupler-phototransistor-output/">Optocoupler</category>
	<link><![CDATA[http://www.hxymos.com/en/optocoupler-phototransistor-output/pc817b-dip-4-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:02:07</pubDate>
	<description><![CDATA[This DC input optocoupler adopts advanced phototransistor output technology, with a forward voltage as low as 1.2V, significantly improving energy efficiency. The high current output capacity of 50mA ensures fast and stable signal transmission, making it an ideal choice for isolation circuit design, signal modulation, and level conversion applications. Widely applicable in the fields of household appliances, office automation, and consumer electronics, providing safe and reliable signal transmission solutions for your devices.]]></description>
</item>
<item>
	<title><![CDATA[HTLP185GB-S(SOP-4)]]></title>
	<category domain="http://www.hxymos.com/en/optocoupler-phototransistor-output/">Optocoupler</category>
	<link><![CDATA[http://www.hxymos.com/en/optocoupler-phototransistor-output/htlp185gb-s-sop-4-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:01:57</pubDate>
	<description><![CDATA[This DC input optocoupler uses a phototransistor output with a forward voltage of 1.25V, optimizing energy consumption and performance. The output current capacity of 50mA ensures robust and stable signal transmission, suitable for a wide range of electronic device isolation applications, including home appliance control circuits, computer peripherals, and instrument equipment, providing safe and efficient signal transmission solutions for your design.]]></description>
</item>
<item>
	<title><![CDATA[HTLP521GB(DIP-4)]]></title>
	<category domain="http://www.hxymos.com/en/optocoupler-phototransistor-output/">Optocoupler</category>
	<link><![CDATA[http://www.hxymos.com/en/optocoupler-phototransistor-output/htlp521gb-dip-4-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:01:47</pubDate>
	<description><![CDATA[This DC input optocoupler uses a phototransistor output and is designed with a low forward voltage of 1.15V, achieving efficient and low-energy operation. Provide sufficient output current of 50mA to ensure high sensitivity and stability of signal transmission. Widely suitable for applications such as circuit isolation and level conversion, such as home electrical control systems, instrumentation, and computer peripherals, providing stable and reliable information transmission bridging for your electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HPS2501-S(SMD-4)]]></title>
	<category domain="http://www.hxymos.com/en/optocoupler-phototransistor-output/">Optocoupler</category>
	<link><![CDATA[http://www.hxymos.com/en/optocoupler-phototransistor-output/hps2501-s-smd-4-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:01:37</pubDate>
	<description><![CDATA[This DC input optocoupler uses a photoelectric transistor output, with a forward voltage of only 1.17V, which is energy-saving and efficient. The output current capability of 50mA ensures fast and accurate signal transmission. Suitable for electronic devices that require excellent signal isolation performance, such as household electrical control, instrument sensing systems, and computer interfaces, providing stable and secure data transmission solutions for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[HTLP785GB-S(SMD-4)]]></title>
	<category domain="http://www.hxymos.com/en/optocoupler-phototransistor-output/">Optocoupler</category>
	<link><![CDATA[http://www.hxymos.com/en/optocoupler-phototransistor-output/htlp785gb-s-smd-4-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:01:27</pubDate>
	<description><![CDATA[This product is a DC input type optocoupler that uses a photoelectric transistor output, with a forward voltage as low as 1.15V, greatly reducing energy consumption. The output current can reach up to 80mA, ensuring strong signal amplification and stable and reliable transmission. Suitable for signal isolation and conversion of electronic products in multiple fields, such as home appliances, office equipment, and consumer electronics circuit design, adding safe and efficient link protection to your innovative projects.]]></description>
</item>
<item>
	<title><![CDATA[HTLP521GB-S(SMD-4)]]></title>
	<category domain="http://www.hxymos.com/en/optocoupler-phototransistor-output/">Optocoupler</category>
	<link><![CDATA[http://www.hxymos.com/en/optocoupler-phototransistor-output/htlp521gb-s-smd-4-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:01:17</pubDate>
	<description><![CDATA[This DC input optocoupler is equipped with a photoelectric transistor output, achieving efficient operation with a low forward voltage of 1.15V and an output current of 50mA, ensuring high sensitivity and stability of signal transmission. Suitable for various circuit designs that require electrical isolation, such as signal transmission for home control panels, instrument equipment, and computer peripherals, providing safe and reliable connection solutions for your electronic projects.]]></description>
</item>
<item>
	<title><![CDATA[HTLP181GB-S(SOP-4)]]></title>
	<category domain="http://www.hxymos.com/en/optocoupler-phototransistor-output/">Optocoupler</category>
	<link><![CDATA[http://www.hxymos.com/en/optocoupler-phototransistor-output/htlp181gb-s-sop-4-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 04:01:08</pubDate>
	<description><![CDATA[This optocoupler adopts DC input voltage and photoelectric transistor output, with exquisite design. The forward voltage is as low as 1.15V to ensure low-power operation, with an output current of up to 50mA, providing stable signal transmission. Suitable for applications such as isolation circuit design, level conversion, and signal modulation, it is an ideal bridge for achieving efficient and reliable data communication between circuits, especially suitable for precision instruments, home appliance control, and computer interface equipment.]]></description>
</item>
<item>
	<title><![CDATA[MAX811T(SOT-143)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max811t-sot-143-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:59:21</pubDate>
	<description><![CDATA[MAX811T is a high-performance monitoring and reset integrated circuit, designed specifically to ensure the stable operation of electronic devices in a compact SOT-143 package. Adopting a push-pull output architecture, providing strong and fast reset signals. Reset the effective level to a low level to ensure that the system accurately performs the reset operation in case of abnormal power supply. Its threshold voltage is accurately set to 3.08V, accurately monitoring the voltage status of a single power supply. When the monitored voltage drops below the threshold, the chip immediately sends a reset signal, effectively preventing the microprocessor and associated circuits from malfunctioning due to power fluctuations. Choose MAX811T to equip your electronic products with advanced power monitoring and protection features.]]></description>
</item>
<item>
	<title><![CDATA[MAX811S(SOT-143)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max811s-sot-143-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:59:11</pubDate>
	<description><![CDATA[MAX811S is a precision monitoring and reset integrated circuit, packaged in a compact SOT-143 package, designed to ensure the stable operation of various electronic devices. Built in push-pull output structure, providing clear and fast reset signals. Reset the effective level to a low level to ensure that the system accurately performs a reset action in case of power supply abnormalities. Its threshold voltage is finely calibrated to 2.93V, accurately monitoring a single power supply voltage. When the monitored voltage drops below the threshold, the chip quickly triggers a reset, effectively preventing damage to the microprocessor and associated circuits due to voltage fluctuations. Choose MAX811S to inject powerful and sensitive power monitoring and self-protection capabilities into your electronic products.]]></description>
</item>
<item>
	<title><![CDATA[MAX811R(SOT-143)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max811r-sot-143-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:59:01</pubDate>
	<description><![CDATA[MAX811R is an advanced monitoring and reset chip designed for power management systems of various electronic devices in a compact SOT-143 package. Adopting a push-pull output type to ensure the clarity and response speed of the reset signal. Reset the effective level to a low level to ensure that the system accurately triggers the reset operation in case of power abnormalities. Its threshold voltage is precisely set to 2.63V, accurately monitoring the voltage status of a single power supply. When the monitored voltage drops below the threshold, the chip quickly sends a reset signal, effectively preventing damage to the microprocessor and associated circuits due to voltage fluctuations. Choose MAX811R to add a solid and reliable power monitoring and protection barrier to your electronic products.]]></description>
</item>
<item>
	<title><![CDATA[MAX810T(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max810t-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:58:51</pubDate>
	<description><![CDATA[MAX810T is a high-performance monitoring and reset integrated circuit designed with a compact SOT-23 package to ensure the stable operation of electronic devices. Adopting a push-pull output architecture, providing strong and fast reset signals. Reset the effective level to a low level to ensure that the system accurately performs the reset operation in case of abnormal power supply. Its threshold voltage is accurately set to 3.08V, accurately monitoring the voltage status of a single power supply. When the monitored voltage drops below the threshold, the chip immediately sends a reset signal, effectively preventing the microprocessor and associated circuits from malfunctioning due to power fluctuations. Choose MAX810T to equip your electronic products with advanced power monitoring and protection features.]]></description>
</item>
<item>
	<title><![CDATA[MAX810S(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max810s-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:58:41</pubDate>
	<description><![CDATA[MAX810S is a precision monitoring and reset integrated circuit, designed to ensure the stable operation of various electronic devices in a compact SOT-23 package. Built in push-pull output structure, providing clear and fast reset signals. Reset the effective level to a low level to ensure that the system accurately performs a reset action in case of power supply abnormalities. Its threshold voltage is finely calibrated to 2.93V, accurately monitoring a single power supply voltage. When the monitored voltage drops below the threshold, the chip quickly triggers a reset, effectively preventing damage to the microprocessor and associated circuits due to voltage fluctuations. Choose MAX810S to inject powerful and sensitive power monitoring and self-protection capabilities into your electronic products.]]></description>
</item>
<item>
	<title><![CDATA[MAX810R(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max810r-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:58:31</pubDate>
	<description><![CDATA[MAX810R is an advanced monitoring and reset chip designed for power management systems of various electronic devices in a compact SOT-23 package. Adopting a push-pull output type to ensure the clarity and response speed of the reset signal. Reset the effective level to a low level to ensure that the system accurately triggers the reset operation in case of power abnormalities. Its threshold voltage is precisely set to 2.63V, accurately monitoring the voltage status of a single power supply. When the monitored voltage drops below the threshold, the chip quickly sends a reset signal, effectively preventing damage to the microprocessor and associated circuits due to voltage fluctuations. Choose MAX810R to add a solid and reliable power monitoring and protection barrier to your electronic products.]]></description>
</item>
<item>
	<title><![CDATA[MAX809T(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max809t-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:58:21</pubDate>
	<description><![CDATA[MAX809T is a high-performance monitoring and reset integrated circuit designed with a compact SOT-23 package to ensure the stable operation of electronic devices. Adopting a push-pull output architecture, providing strong and fast reset signals. Reset the effective level to a low level to ensure that the system accurately performs the reset operation in case of abnormal power supply. Its threshold voltage is accurately set to 3.08V, accurately monitoring the voltage status of a single power supply. When the monitored voltage drops below the threshold, the chip immediately sends a reset signal, effectively preventing the microprocessor and associated circuits from malfunctioning due to power fluctuations. Choose MAX809T to equip your electronic products with advanced power monitoring and protection features.]]></description>
</item>
<item>
	<title><![CDATA[MAX809R(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max809r-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:58:11</pubDate>
	<description><![CDATA[MAX809R is a precision monitoring and reset chip, packaged in a small SOT-23 package, providing rigorous power monitoring protection for various electronic devices. The built-in push-pull output structure ensures the clarity and response speed of the reset signal. Reset the effective level to a low level to ensure that the system accurately performs a reset action in case of power supply abnormalities. Its threshold voltage is finely calibrated to 2.63V, accurately monitoring a single power supply voltage. When the monitored voltage drops below the threshold, the chip quickly triggers a reset, effectively preventing damage to the microprocessor and associated circuits due to voltage fluctuations. Choose MAX809R to inject powerful and sensitive power monitoring and self-protection capabilities into your electronic products.]]></description>
</item>
<item>
	<title><![CDATA[MAX809L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max809l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:58:01</pubDate>
	<description><![CDATA[MAX809L is an efficient monitoring and reset chip designed for power management of various electronic devices in a compact SOT-23 package. Adopting a push-pull output type, providing clear and fast reset signals. Its reset effective level is low, ensuring that the system accurately triggers the reset operation in case of power supply abnormalities. The threshold voltage is precisely set to 4.63V to accurately monitor the voltage status of a single power source. When the monitored voltage drops below the threshold, the chip immediately sends a reset signal, effectively preventing potential problems caused by power fluctuations in the microprocessor and associated circuits. Choose MAX809L to add a solid and reliable power monitoring and protection mechanism to your device.]]></description>
</item>
<item>
	<title><![CDATA[MAX809J(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max809j-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:57:51</pubDate>
	<description><![CDATA[The MAX809J monitoring reset chip adopts a compact SOT-23 packaging, providing critical assurance for stable system operation. Equipped with a push-pull output type to ensure the strength and speed of the reset signal. Low level effective reset logic ensures timely system restart in case of fault. Its threshold voltage is set to 4V, accurately monitoring a single power supply voltage. When the power supply voltage drops below the threshold, a quick reset action is triggered to effectively prevent damage to the microprocessor and associated circuits due to abnormal voltage. Using MAX809J, endow your electronic products with powerful and sensitive power monitoring and self-protection capabilities.]]></description>
</item>
<item>
	<title><![CDATA[MAX809M(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max809m-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:57:41</pubDate>
	<description><![CDATA[The MAX809M monitoring reset integrated circuit adopts a small SOT-23 package and is designed specifically for system reliability optimization. Equipped with a push-pull output type, ensuring a clean and fast reset signal. Low level effective reset effective level, ensuring reliable system reset under fault conditions. The precise threshold voltage is set to 4.38V to accurately monitor a single power supply voltage. Once the monitoring voltage drops below the threshold, a reset is immediately triggered to effectively protect the microprocessor and surrounding circuits from abnormal voltage effects. Choose MAX809M to provide robust power monitoring and system protection for your electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[TP4066(ESOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/battery-management/">Battery-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/battery-management/tp4066-esop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:55:43</pubDate>
	<description><![CDATA[This linear charging chip is tailored for lithium-ion/lithium polymer batteries, with a wide operating voltage range and support for 4.2V to 9V inputs, ensuring flexible adaptation to multiple power sources. Provide a stable maximum charging current of 1A, which can quickly charge and protect battery health. Suitable for mobile power supplies, smart wearables, and portable electronic devices, it is an ideal choice for safe and efficient charging solutions, keeping your device fully charged and ready to use at all times.]]></description>
</item>
<item>
	<title><![CDATA[HMAX232EIDR(SOP-16)]]></title>
	<category domain="http://www.hxymos.com/en/rs232/">RS232</category>
	<link><![CDATA[http://www.hxymos.com/en/rs232/hmax232eidr-sop-16-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:54:20</pubDate>
	<description><![CDATA[This high-performance RS232 transceiver is equipped with 2 drivers and 2 receivers, with a data transmission rate of up to 250Kbps, ensuring high-speed and stable serial communication. The working voltage range is 4.5V to 5.5V, optimizing energy use while maintaining efficient operation. Widely applicable to PC peripherals, instrument devices, and embedded control systems, providing reliable serial connection solutions between your devices, accelerating data exchange, and improving overall system performance.]]></description>
</item>
<item>
	<title><![CDATA[HMAX232DR(SOP-16)]]></title>
	<category domain="http://www.hxymos.com/en/rs232/">RS232</category>
	<link><![CDATA[http://www.hxymos.com/en/rs232/hmax232dr-sop-16-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:54:00</pubDate>
	<description><![CDATA[HMAX232DR is a standard RS232 transceiver integrated circuit, packaged in SOP-16 format, specifically designed for bidirectional conversion between TTL/CMOS level and RS-232 level. Integrate 2 drivers and 2 receiver channels to ensure stable and reliable serial data communication. At a power supply voltage of 4.5V to 5.5V, the device can support a data rate of up to 250Kbps, adapting to a wide range of application environments. Suitable for computer peripherals, embedded systems, and various devices that require RS-232 interfaces, providing efficient and stable serial communication solutions.]]></description>
</item>
<item>
	<title><![CDATA[HMAX232ECDR(SOP-16)]]></title>
	<category domain="http://www.hxymos.com/en/rs232/">RS232</category>
	<link><![CDATA[http://www.hxymos.com/en/rs232/hmax232ecdr-sop-16-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:53:50</pubDate>
	<description><![CDATA[HMAX232ECDR is a high-performance RS232 transceiver chip designed for serial communication interfaces using standard SOP-16 packaging. Built in 2-way drivers and 2-way receivers, supporting bidirectional data transmission, ensuring reliable data exchange. Working at a power supply voltage of 4.5V to 5.5V, this chip can achieve a data rate of up to 250Kbps, meeting the requirements of high-speed serial communication. Suitable for various PC peripherals, embedded systems, office equipment and other application scenarios, providing stable and efficient RS232 signal level conversion solutions.]]></description>
</item>
<item>
	<title><![CDATA[SP3232EEN(SOP-16)]]></title>
	<category domain="http://www.hxymos.com/en/rs232/">RS232</category>
	<link><![CDATA[http://www.hxymos.com/en/rs232/sp3232een-sop-16-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:53:40</pubDate>
	<description><![CDATA[Excellent SP3232EEN RS232 transceiver, designed for efficient serial communication in SOP-16 packaging. This chip integrates 2 drivers and 2 receiver channels to achieve full duplex data exchange. Stable operation within a wide voltage range of 3V to 5.5V, meeting the requirements of modern low-voltage systems. The data transmission rate can reach up to 250Kbps, ensuring fast and accurate information exchange. Suitable for various embedded systems, computer peripherals, and general-purpose serial devices. Choose SP3232EEN to experience excellent performance and seamless integration advantages.]]></description>
</item>
<item>
	<title><![CDATA[ST3232BDR(SOP-16)]]></title>
	<category domain="http://www.hxymos.com/en/rs232/">RS232</category>
	<link><![CDATA[http://www.hxymos.com/en/rs232/st3232bdr-sop-16-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:53:30</pubDate>
	<description><![CDATA[Professional level RS232 communication solution, model ST3232BDR, using compact SOP-16 packaging. This high-performance transceiver supports 2-way transmission and 2-way reception, ensuring bidirectional full duplex data transmission. The working power supply has a wide voltage range, suitable for environments ranging from 3V to 5.5V, and is compatible with various power supply systems. Realize a stable and reliable data rate of up to 250Kbps, especially suitable for embedded systems, communication devices, and various serial interface applications that require high speed and low power consumption. Instantly improve your design efficiency and communication performance, with easy integration and quality assurance.]]></description>
</item>
<item>
	<title><![CDATA[SP202EEN(SOP-16)]]></title>
	<category domain="http://www.hxymos.com/en/rs232/">RS232</category>
	<link><![CDATA[http://www.hxymos.com/en/rs232/sp202een-sop-16-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:53:20</pubDate>
	<description><![CDATA[The SP202EEN RS232 transceiver chip adopts SOP-16 packaging and is designed specifically for standard RS-232 serial communication. Working at a power supply voltage of 4.5V to 5.5V, stable support for 120Kbps data transmission rate. Integrate dual drivers and dual receivers to easily achieve full duplex RS232 interface connection. Suitable for various consumer electronics, computer peripherals, low-speed data communication devices, and other occasions, ensuring standard and reliable serial data exchange. Produced by the original factory, we provide a standardized and stable RS232 interface solution for your project!]]></description>
</item>
<item>
	<title><![CDATA[ADM202(SOP-16)]]></title>
	<category domain="http://www.hxymos.com/en/rs232/">RS232</category>
	<link><![CDATA[http://www.hxymos.com/en/rs232/adm202-sop-16-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:53:10</pubDate>
	<description><![CDATA[The ADM202 RS232 transceiver adopts SOP-16 packaging and is specially designed for standard RS-232 serial communication applications. Working at a power supply voltage of 4.5V to 5.5V, ensuring a stable transmission rate of 120Kbps. Integrate dual drivers and dual receivers to achieve perfect full duplex RS232 interface connection. Suitable for consumer electronics, computer interface devices, low-speed data communication systems, and other scenarios, providing standard and reliable serial data transmission. Original factory quality injects standardized and efficient RS232 interface support into your project!]]></description>
</item>
<item>
	<title><![CDATA[MAX202(SOP-16)]]></title>
	<category domain="http://www.hxymos.com/en/rs232/">RS232</category>
	<link><![CDATA[http://www.hxymos.com/en/rs232/max202-sop-16-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:53:00</pubDate>
	<description><![CDATA[The MAX202 RS232 transceiver chip adopts SOP-16 packaging and is designed specifically for standard RS-232 serial communication. Working at a power supply voltage of 4.5V to 5.5V, stable support for 120Kbps data transmission rate. Integrate dual drivers and dual receivers to easily achieve full duplex RS232 interface connection. Suitable for various consumer electronics, computer peripherals, low-speed data communication devices, and other occasions, ensuring standard and reliable serial data exchange. Produced by the original factory, we provide a standardized and stable RS232 interface solution for your project!]]></description>
</item>
<item>
	<title><![CDATA[ST232BDR(SOP-16)]]></title>
	<category domain="http://www.hxymos.com/en/rs232/">RS232</category>
	<link><![CDATA[http://www.hxymos.com/en/rs232/st232bdr-sop-16-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:52:50</pubDate>
	<description><![CDATA[The ST232BDR RS232 transceiver adopts SOP-16 packaging and is specially designed for standard RS-232 serial communication applications. Working on a 5V power supply voltage, ensuring a stable transmission rate of 240Kbps. Integrate dual drivers and dual receivers to achieve perfect full duplex RS232 interface connection. Suitable for consumer electronics, computer interface devices, data communication systems, and other scenarios, providing standard and reliable serial data transmission. Original factory quality injects standardized and efficient RS232 interface support into your project!]]></description>
</item>
<item>
	<title><![CDATA[SP232EEN(SOP-16)]]></title>
	<category domain="http://www.hxymos.com/en/rs232/">RS232</category>
	<link><![CDATA[http://www.hxymos.com/en/rs232/sp232een-sop-16-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:52:40</pubDate>
	<description><![CDATA[The SP232EEN RS232 transceiver chip adopts SOP-16 packaging and is designed specifically for standard RS-232 serial communication. Working on a 5V power supply voltage, achieving a stable data transmission rate of 240Kbps. Integrate dual drivers and dual receivers, fully supporting full duplex RS232 interfaces. Suitable for various consumer electronics, computer peripherals, data communication devices, and other occasions, ensuring standard and reliable serial data exchange. Produced by the original factory, we provide a standardized and stable RS232 interface solution for your project!]]></description>
</item>
<item>
	<title><![CDATA[HSN75176BDR(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/rs485rs422/">RS485/RS422</category>
	<link><![CDATA[http://www.hxymos.com/en/rs485rs422/hsn75176bdr-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:31:37</pubDate>
	<description><![CDATA[This RS-485/RS-422 transceiver chip integrates a single driver and receiver, optimized for high-speed communication, with a data transmission rate of up to 10Mbps, meeting demanding real-time data exchange requirements. The working voltage is finely regulated between 4.75V and 5.25V to ensure efficient and stable operation. Suitable for various high bandwidth applications, including smart homes, security monitoring, and high-end AV systems, build an ultra fast, low latency communication path between your devices, and enjoy a high-speed data transmission experience.]]></description>
</item>
<item>
	<title><![CDATA[HSN75176ADR(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/rs485rs422/">RS485/RS422</category>
	<link><![CDATA[http://www.hxymos.com/en/rs485rs422/hsn75176adr-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:31:27</pubDate>
	<description><![CDATA[This high-performance RS-485/RS-422 transceiver chip is equipped with one driver and one receiver, specifically designed for high-speed data transmission, with a data rate of up to 10Mbps, ensuring fast and delay free communication. The power supply voltage is stable in the range of 4.75V to 5.25V, optimizing energy efficiency. Widely applicable to scenarios that require high-speed and long-distance data transmission, such as security monitoring networks, data center interconnections, and advanced automation control systems, building a fast and stable communication bridge between your devices.]]></description>
</item>
<item>
	<title><![CDATA[HSN65LBC184DR(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/rs485rs422/">RS485/RS422</category>
	<link><![CDATA[http://www.hxymos.com/en/rs485rs422/hsn65lbc184dr-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:31:17</pubDate>
	<description><![CDATA[This exquisite RS-485/RS-422 transceiver integrates a single driver and receiver, designed specifically for stable data transmission. Supports a data rate of 250Kbps, meeting most medium speed communication needs. The working voltage range is accurately set between 4.75V and 5.25V, ensuring efficient and stable power supply. Suitable for numerous remote communication applications, such as security monitoring, instrument control, and smart home systems, it enhances the reliability and efficiency of data exchange between systems and is the preferred solution for building stable communication links.]]></description>
</item>
<item>
	<title><![CDATA[HSN65LBC184DRG4(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/rs485rs422/">RS485/RS422</category>
	<link><![CDATA[http://www.hxymos.com/en/rs485rs422/hsn65lbc184drg4-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:31:08</pubDate>
	<description><![CDATA[This RS-485/RS-422 transceiver chip is equipped with 1 driver and 1 receiver, focusing on providing stable and reliable serial communication. The data transfer rate can reach up to 250Kbps, suitable for medium speed data links. The working voltage range is 4.75V to 5.25V, ensuring stable operation within a strict voltage fluctuation range. It can effectively enhance the data exchange ability between network devices, security systems, and automation control devices, and is an ideal component for building efficient and anti-interference communication networks.]]></description>
</item>
<item>
	<title><![CDATA[HADM485ARZ-REEL(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/rs485rs422/">RS485/RS422</category>
	<link><![CDATA[http://www.hxymos.com/en/rs485rs422/hadm485arz-reel-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:30:58</pubDate>
	<description><![CDATA[This high-performance RS-485/RS-422 transceiver integrates one set of drivers and receivers, with a data transfer rate of up to 2.5Mbps, providing a high-speed and stable communication link between your devices. The working voltage range is refined to 4.75V to 5.25V, ensuring efficient and stable energy use. Suitable for various long-distance and multi-point communication systems, such as security networks, office automation, and smart home devices, improving the reliability and efficiency of system communication, it is an ideal choice for building high-quality data transmission networks.]]></description>
</item>
<item>
	<title><![CDATA[HADM485ARZ(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/rs485rs422/">RS485/RS422</category>
	<link><![CDATA[http://www.hxymos.com/en/rs485rs422/hadm485arz-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:30:48</pubDate>
	<description><![CDATA[This RS-485/RS-422 transceiver chip integrates one driver and one receiver, designed specifically for high-speed data transmission, with a data rate of up to 2.5Mbps, meeting high-speed communication needs. The working voltage range is precisely positioned between 4.75V and 5.25V, ensuring stable operation under strict voltage requirements. Suitable for scenarios that require long-distance and high reliability data transmission, such as security monitoring, smart homes, and automation control systems, providing a solid bridge for your network architecture and achieving smooth information exchange.]]></description>
</item>
<item>
	<title><![CDATA[HSN65HVD12DR(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/rs485rs422/">RS485/RS422</category>
	<link><![CDATA[http://www.hxymos.com/en/rs485rs422/hsn65hvd12dr-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:30:38</pubDate>
	<description><![CDATA[HSN65HVD12DR is a high-performance RS-485/RS-422 transceiver chip designed for multi node, long-distance communication in a compact SOP-8 package. Integrate one driver and one receiver, support single ended bidirectional half duplex data transmission, with a speed of up to 1Mbps. Working in low voltage environments ranging from 3V to 3.6V, this device maintains high efficiency and low power consumption, ensuring reliable bus network communication. Suitable for distributed control systems, smart homes, security monitoring and other occasions, providing efficient and anti-interference serial communication solutions.]]></description>
</item>
<item>
	<title><![CDATA[ST3485EBDR(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/rs485rs422/">RS485/RS422</category>
	<link><![CDATA[http://www.hxymos.com/en/rs485rs422/st3485ebdr-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:30:28</pubDate>
	<description><![CDATA[The ST3485EBDR RS-485/RS-422 transceiver adopts SOP-8 packaging and is specially designed for 3.3V power supply and high-speed serial communication applications. Working on a single 3.3V power supply voltage, ensuring a stable transmission rate of 10Mbps. Integrate single driver and single receiver for easy half duplex RS-485 or RS-422 network connection. Suitable for low voltage environments such as modern consumer electronics, portable devices, and high-speed data transmission systems, providing efficient and anti-interference serial interface solutions. Original factory quality injects high-speed and low-voltage serial data exchange capabilities into your project!]]></description>
</item>
<item>
	<title><![CDATA[SP3485EN(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/rs485rs422/">RS485/RS422</category>
	<link><![CDATA[http://www.hxymos.com/en/rs485rs422/sp3485en-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:30:18</pubDate>
	<description><![CDATA[The SP3485EN RS-485/RS-422 transceiver chip adopts SOP-8 packaging and is designed specifically for 3.3V systems and high-speed serial communication. Working on a single 3.3V power supply voltage, achieving a data transmission rate of up to 10Mbps. Integrate single driver and single receiver to easily build a half duplex RS-485 or RS-422 network. Suitable for low voltage environments such as modern consumer electronics, mobile devices, and high-speed data transmission systems, ensuring efficient and anti-interference multi node communication. Produced by the original factory, we provide high-performance and low-voltage serial interface solutions for your project!]]></description>
</item>
<item>
	<title><![CDATA[SN75176N(DIP-8)]]></title>
	<category domain="http://www.hxymos.com/en/rs485rs422/">RS485/RS422</category>
	<link><![CDATA[http://www.hxymos.com/en/rs485rs422/sn75176n-dip-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:30:08</pubDate>
	<description><![CDATA[The SN75176N RS-485/RS-422 transceiver chip adopts DIP-8 packaging and is designed specifically for high-speed, long-distance serial communication applications. Achieve a data transfer rate of up to 10Mbps at power voltages ranging from 4.75V to 5.25V. Integrate single driver and single receiver to easily build a half duplex RS-485 or RS-422 network. Suitable for high-performance consumer electronics, high-speed data acquisition, intelligent control and other applications, ensuring high-speed and anti-interference multi-point communication. Produced by the original factory, we provide high-speed and stable serial interface solutions for your project!]]></description>
</item>
<item>
	<title><![CDATA[MAX3483ESA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/rs485rs422/">RS485/RS422</category>
	<link><![CDATA[http://www.hxymos.com/en/rs485rs422/max3483esa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:29:58</pubDate>
	<description><![CDATA[The MAX3483ESA RS-485/RS-422 transceiver adopts SOP-8 packaging and is designed for low voltage, low-power serial communication. Working on a power supply voltage of 3V to 3.6V, ensuring a stable transmission rate of 250Kbps. Integrate single driver and single receiver for easy half duplex RS-485 or RS-422 network connection. Suitable for low-energy applications such as battery powered devices, portable electronics, and smart homes, providing energy-saving and anti-interference serial interface solutions. Original factory quality injects efficient and reliable low-voltage serial data exchange capability into your project!]]></description>
</item>
<item>
	<title><![CDATA[SP3483EN(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/rs485rs422/">RS485/RS422</category>
	<link><![CDATA[http://www.hxymos.com/en/rs485rs422/sp3483en-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:29:48</pubDate>
	<description><![CDATA[The SP3483EN RS-485/RS-422 transceiver chip adopts SOP-8 packaging and is designed specifically for low-voltage, long-distance serial communication applications. Stable support for 250Kbps data transmission rate at a power supply voltage of 3V to 3.6V. Integrate single driver and single receiver to easily build a half duplex RS-485 or RS-422 network. Suitable for low-power applications such as mobile devices, battery powered systems, and smart homes, ensuring efficient and anti-interference multi node communication. Produced by the original factory, we provide energy-saving and reliable serial interface solutions for your project!]]></description>
</item>
<item>
	<title><![CDATA[MAX1487ESA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/rs485rs422/">RS485/RS422</category>
	<link><![CDATA[http://www.hxymos.com/en/rs485rs422/max1487esa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:29:38</pubDate>
	<description><![CDATA[The MAX1487ESA RS-485/RS-422 transceiver adopts SOP-8 packaging and is designed specifically for high-speed, low-noise serial communication. Working at a power supply voltage of 4.75V to 5.25V, ensuring a stable transmission rate of 2.5Mbps. Integrate single driver and single receiver for easy half duplex RS-485 or RS-422 network connection. Suitable for various consumer electronics, intelligent hardware, remote monitoring systems, and other scenarios, providing high-speed and anti-interference serial interface solutions. Original factory quality empowers your project with efficient and stable high-speed serial data exchange capabilities!]]></description>
</item>
<item>
	<title><![CDATA[SP485EN(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/rs485rs422/">RS485/RS422</category>
	<link><![CDATA[http://www.hxymos.com/en/rs485rs422/sp485en-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:29:29</pubDate>
	<description><![CDATA[The SP485EN RS-485/RS-422 transceiver chip adopts SOP-8 packaging and is specially designed for high-speed, long-distance serial communication applications. Achieve a data transfer rate of up to 2.5Mbps at power voltages ranging from 4.75V to 5.25V. Integrate one driver and one receiver to easily build a half duplex RS-485 or RS-422 network. Suitable for consumer electronics, smart homes, data acquisition systems, and other applications, ensuring high bandwidth and anti-interference multi-point communication. Produced by the original factory, we provide high-performance and reliable serial interface solutions for your project!]]></description>
</item>
<item>
	<title><![CDATA[MAX487ESA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/rs485rs422/">RS485/RS422</category>
	<link><![CDATA[http://www.hxymos.com/en/rs485rs422/max487esa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:29:19</pubDate>
	<description><![CDATA[The MAX487ESA RS-485/RS-422 transceiver adopts SOP-8 packaging and is designed for efficient and long-distance serial communication. Stable support for 250Kbps data transmission rate at power supply voltages ranging from 4.75V to 5.25V. Integrate a single driver and a single receiver to easily form a half duplex RS-485 or RS-422 network. Suitable for various consumer electronics, smart devices, remote control systems and other applications, ensuring strong noise resistance and long-distance multi node communication. Original factory quality, providing robust and high-speed serial interface technology support for your project!]]></description>
</item>
<item>
	<title><![CDATA[SN75LBC184DR(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/rs485rs422/">RS485/RS422</category>
	<link><![CDATA[http://www.hxymos.com/en/rs485rs422/sn75lbc184dr-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:29:09</pubDate>
	<description><![CDATA[The SN75LBC184DR RS-485/RS-422 transceiver adopts SOP-8 packaging and is specially designed for multi-point and long-distance data communication. Working at a power supply voltage of 4.75V to 5.25V, ensuring a stable transmission rate of 250Kbps. Integrate one driver and one receiver to easily achieve half duplex RS-485 or RS-422 network connection. Suitable for various consumer electronics, smart homes, remote monitoring systems and other scenarios, providing anti-interference and highly reliable serial interface solutions. Original factory quality empowers your project with efficient and stable serial data exchange capabilities!]]></description>
</item>
<item>
	<title><![CDATA[SN65LBC184N(DIP-8)]]></title>
	<category domain="http://www.hxymos.com/en/rs485rs422/">RS485/RS422</category>
	<link><![CDATA[http://www.hxymos.com/en/rs485rs422/sn65lbc184n-dip-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:28:59</pubDate>
	<description><![CDATA[The SN65LBC184N RS-485/RS-422 transceiver chip adopts DIP-8 packaging and is designed specifically for multi node serial communication. This device supports a power supply voltage of 4.75V to 5.25V, achieving a stable data transmission rate of up to 250Kbps. Built in with 1 driver and 1 receiver, it is easy to build a half duplex RS-485 or RS-422 network. Suitable for various consumer electronics, smart devices, data acquisition systems, and other occasions, ensuring long-distance, anti-interference multi-point communication. Produced by the original factory, we provide reliable and efficient serial interface solutions for your project!]]></description>
</item>
<item>
	<title><![CDATA[HLM2902DR(SOP-14)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/hlm2902dr-sop-14-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:21:58</pubDate>
	<description><![CDATA[This four channel operational amplifier combines high performance and high integration, with a gain bandwidth product of 1.2MHz, ensuring signal amplification without distortion. The ultra-low input bias current is only 20 nanoamperes, effectively reducing signal error. A pressure swing rate of 0.5V/μ s makes the amplification response faster, suitable for precision instruments, audio processing, and various high-sensitivity electronic circuit designs. It helps improve the signal processing quality of your system with excellent stability and linearity, making it the perfect choice for pursuing pure sound quality and precise measurement.]]></description>
</item>
<item>
	<title><![CDATA[HMCP6031T-E/OT(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/hmcp6031t-e-ot-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:21:49</pubDate>
	<description><![CDATA[The HMCP6031T-E/OT operational amplifier adopts a miniature SOT-23-5L package, which includes a single low-power amplifier. Having a 10kHz gain bandwidth product (GBP), focusing on low-frequency signal amplification, ensuring excellent steady-state performance. The ultra-low input bias current (Ib) of only 1pA ensures high accuracy and extremely low power consumption. A slewing rate (SR) of 0.004V/μ s ensures smooth tracking of slowly changing signals. This device is particularly suitable for applications with strict requirements for low power consumption, long-term stability, and high accuracy, such as battery powered equipment, low-speed data acquisition, and environmental monitoring.]]></description>
</item>
<item>
	<title><![CDATA[HAD8541ARTZ(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/had8541artz-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:21:39</pubDate>
	<description><![CDATA[The HAD8541ARTZ operational amplifier adopts an ultra small SOT-23-5L package, providing single channel high-performance amplification function. Its 1MHz gain bandwidth product (GBP) ensures intermediate frequency signal processing capability, while the extremely low input bias current (Ib) of 4pA ensures high-precision and low-power operation. A swing rate (SR) of 0.92V/μ s ensures accurate tracking of rapidly changing signals. This device is particularly suitable for applications such as limited space, noise sensitive devices, portable instruments, and sensor conditioning.]]></description>
</item>
<item>
	<title><![CDATA[HOPA2348AIDR(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/hopa2348aidr-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:21:29</pubDate>
	<description><![CDATA[The HOPA2348AIDR operational amplifier adopts a compact SOP-8 package and integrates dual low-power amplifiers. Equipped with 1MHz gain bandwidth product (GBP), suitable for intermediate frequency signal amplification. Extremely low input bias current (Ib only 0.5pA), effectively reducing system noise and improving overall accuracy. The 0.5V/μ s yaw rate (SR) ensures smooth tracking of slowly changing signals. This device is particularly suitable for applications such as battery powered equipment, portable instruments, sensor interfaces, etc. that have strict requirements for low power consumption and high accuracy.]]></description>
</item>
<item>
	<title><![CDATA[HOPA2340UA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/hopa2340ua-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:21:19</pubDate>
	<description><![CDATA[The HOPA2340UA operational amplifier adopts a compact SOP-8 package and contains two high-performance amplifiers. With a gain bandwidth product (GBP) of 5.5MHz, it can stably process a wide range of intermediate frequency signals. Its ultra-low input bias current (Ib only 0.2pA) ensures extremely low noise and high-precision signal transmission. The high voltage swing rate (SR) of 6V/μ s ensures fast response and accurate capture of transient changes. This device is particularly suitable for precision measuring instruments, signal generators, and other fields that have strict requirements for low noise, high speed, and high precision.]]></description>
</item>
<item>
	<title><![CDATA[HOPA2338UA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/hopa2338ua-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:21:09</pubDate>
	<description><![CDATA[The HOPA2338UA operational amplifier adopts a sophisticated SOP-8 package and integrates dual high-performance amplification channels. With a gain bandwidth product (GBP) of 12.5MHz, it can easily meet the amplification needs of various medium and high frequency signals. Ultra low input bias current (Ib only 0.2pA) ensures extremely low power consumption and unparalleled signal purity. The pressure swing rate (SR) of 4.6V/μ s endows it with fast transient response characteristics, accurately capturing rapidly changing signals. This device is particularly suitable for application environments that require high speed, low noise, and high precision, such as scientific research equipment, medical instruments, and precision testing systems.]]></description>
</item>
<item>
	<title><![CDATA[HMCP6022T-I/SN(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/hmcp6022t-i-sn-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:20:59</pubDate>
	<description><![CDATA[The HMCP6022T-I/SN operational amplifier adopts an economical SOP-8 package, which includes two high-speed and low-power amplifiers. Having a gain bandwidth product (GBP) of 10MHz ensures excellent linearity over a wide frequency range, especially suitable for high-frequency signal processing needs. A very low input bias current (Ib) of only 1pA helps to reduce system errors and achieve extremely high accuracy. The slewing rate (SR) of 500 μ V ensures delicate tracking ability for weak signals. This device is widely used in medical equipment, audio processing, data acquisition systems, and other application scenarios that have strict requirements for high speed, low noise, and high accuracy.]]></description>
</item>
<item>
	<title><![CDATA[HMCP602-I/SN(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/hmcp602-i-sn-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:20:49</pubDate>
	<description><![CDATA[The HMCP602-I/SN operational amplifier adopts a compact SOP-8 package and integrates dual high-performance amplification channels. Equipped with a 2.8MHz gain bandwidth product (GBP), providing excellent high-frequency response capability, suitable for processing broadband signals. The ultra-low input bias current (Ib only 1pA) ensures high-precision and low-noise operation. A high voltage swing rate (SR) of 2.3V/μ s ensures fast transient response and precise capture of rapidly changing signals. This device is an ideal choice for high-speed and high-precision amplification needs in consumer electronics, communication equipment, scientific research instruments, and other fields.]]></description>
</item>
<item>
	<title><![CDATA[HMCP6002T-I/SN(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/hmcp6002t-i-sn-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:20:39</pubDate>
	<description><![CDATA[The HMCP6002T-I/SN operational amplifier adopts a space saving SOP-8 package, which includes two high-precision amplification units. Provide a wide frequency response range with a gain bandwidth product (GBP) of 1MHz, ensuring effective processing of intermediate frequency signals. Excellent low input bias current (Ib only 1pA), minimizing interference and optimizing low-power application performance. The slewing rate (SR) of 0.6V/μ s ensures accurate tracking of rapidly changing signals. This device is particularly suitable for system designs that have strict requirements for low power consumption and high precision, such as battery powered equipment, portable instruments, and sensor interfaces.]]></description>
</item>
<item>
	<title><![CDATA[HAD8542ARZ(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/had8542arz-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:20:29</pubDate>
	<description><![CDATA[The HAD8542ARZ operational amplifier adopts a small SOP-8 package and integrates dual high-performance amplification channels. Its gain bandwidth product (GBP) is as high as 1MHz, ensuring broadband response and suitable for processing various analog signals. Having ultra-low input bias current (Ib only 4pA) significantly reduces system error and improves measurement accuracy. The slewing rate (SR) is 0.92V/μ s, ensuring fast signal following capability. This device is particularly suitable for applications such as data acquisition and laboratory instruments that require strict requirements for low noise and high linearity.]]></description>
</item>
<item>
	<title><![CDATA[HMCP6004T-I/SL(SOP-14)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/hmcp6004t-i-sl-sop-14-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:20:20</pubDate>
	<description><![CDATA[The HMCP6004T-I/SL operational amplifier adopts a compact SOP-14 package, which includes four independent high-precision amplifiers. Featuring excellent low input bias current (Ib only 1pA), ensuring extremely low power consumption and high-precision signal processing. Its gain bandwidth product (GBP) reaches 1MHz, endowing it with fast response capability and suitable for amplifying intermediate frequency signals. The slewing rate (SR) is 0.6V/μ s, ensuring fast tracking of transient signals. This device is suitable for applications that are sensitive to noise and require efficient integration solutions, such as precision measurement, signal conditioning, and instrumentation.]]></description>
</item>
<item>
	<title><![CDATA[HMCP6002T-I/MS(MSOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/hmcp6002t-i-ms-msop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:20:10</pubDate>
	<description><![CDATA[HMCP6002T-I/MS is a high-precision dual channel operational amplifier designed in a compact MSOP-8 package for applications with strict requirements for low noise, extremely low bias current, and high precision. This device provides a gain bandwidth product (GBP) of 1MHz, ensuring stable and accurate signal amplification in the mid frequency range. Its input bias current (Ib) is extremely low, only 1pA, and it is almost imperceptibly connected to a high impedance source, making it particularly suitable for use with high impedance sensors or weak signal sources. The slewing rate (SR) of 0.6V/us ensures good tracking performance for slowly changing signals.]]></description>
</item>
<item>
	<title><![CDATA[HMCP6002T-E/MS(MSOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/hmcp6002t-e-ms-msop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:20:00</pubDate>
	<description><![CDATA[HMCP6002T-E/MS is a high-precision dual channel operational amplifier, designed in a compact MSOP-8 package for applications with strict requirements for low noise, extremely low bias current, and high precision. This device provides a gain bandwidth product (GBP) of 1MHz, ensuring stable and accurate signal amplification in the mid frequency range. Its input bias current (Ib) is extremely low, only 1pA, and it is almost imperceptibly connected to a high impedance source, making it particularly suitable for matching with high impedance sensors or weak signal sources. The slewing rate (SR) of 0.6V/us ensures good tracking performance for slowly changing signals. HMCP6002T-E/MS, with its ultra-low noise, ultra-low offset voltage, and excellent common mode rejection ratio (CMRR), has become an ideal choice for laboratory analytical instruments, precision measurement systems, and other applications that have extremely high requirements for signal quality and accuracy.]]></description>
</item>
<item>
	<title><![CDATA[HLMV722IDGKR(MSOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/hlmv722idgkr-msop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:19:50</pubDate>
	<description><![CDATA[HLMV722IDGKR is a high-speed dual channel operational amplifier designed in a compact MSOP-8 package for applications with high requirements for broadband and fast response. This device has a gain bandwidth product (GBP) of 10MHz, ensuring efficient and fast signal amplification over a wide frequency range. Its input bias current (Ib) is as low as 260nA, effectively reducing the load effect on high impedance sources, especially suitable for integration with high impedance sensors or low-power systems. The slewing rate (SR) of 5.25V/us ensures excellent tracking ability to rapidly changing signals. The HLMV722IDGKR has low noise, low offset voltage, and a wide power supply voltage range, making it an ideal solution for high-speed signal processing needs in fields such as high-speed data acquisition, communication interfaces, consumer electronics, and portable devices.]]></description>
</item>
<item>
	<title><![CDATA[HAD8542ARMZ(MSOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/had8542armz-msop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:19:40</pubDate>
	<description><![CDATA[HAD8542ARMZ is a high-precision dual channel operational amplifier designed in a space saving MSOP-8 package for applications with strict requirements for low noise, low bias current, and high precision. This device provides a gain bandwidth product (GBP) of 1MHz, ensuring fast and stable signal amplification in the mid frequency range. Its input bias current (Ib) is extremely low, only 4pA, greatly reducing the impact on high impedance sources, making it particularly suitable for pairing with precision sensors or weak signal sources. The slewing rate (SR) of 0.92V/us ensures the ability to quickly respond to transient changes. HAD8542ARMZ, with its ultra-low noise, ultra-low offset voltage, and excellent common mode rejection ratio (CMRR), has become an ideal choice for scientific research instruments, high-precision data acquisition systems, and other applications that have extremely high requirements for signal purity and accuracy.]]></description>
</item>
<item>
	<title><![CDATA[HOPA330AIDBVR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/hopa330aidbvr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:19:30</pubDate>
	<description><![CDATA[HOPA330AIDBVR is a high-precision single channel precision operational amplifier designed for applications with strict requirements for low noise and low power consumption, using a space saving SOT-23-5L package. This device has a gain bandwidth product (GBP) of 350kHz, ensuring precise and stable signal amplification in the mid to low frequency range. Its input offset voltage (Vos) is as low as 8 μ V, ensuring excellent DC accuracy, while the input bias current (Ib) is only 200pA, effectively reducing the load impact on high impedance sources. It is particularly suitable for use with high impedance sensors or weak signal sources. The HOPA330AIDBVR has low noise, low static current, and good temperature stability, making it an ideal choice for applications with dual considerations of energy consumption and accuracy, such as battery powered equipment, portable instruments, and data acquisition systems.]]></description>
</item>
<item>
	<title><![CDATA[HOPA2335AIDR(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/hopa2335aidr-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:19:20</pubDate>
	<description><![CDATA[HOPA2335AIDR is a high-performance dual channel precision operational amplifier designed for applications with high requirements for noise suppression and signal fidelity, using a small SOP-8 package. Its 2MHz gain bandwidth product (GBP) ensures fast response and precise signal amplification within a wide frequency band. The input offset voltage (Vos) is only 1 μ V, ensuring extremely low DC offset, while the input bias current (Ib) is as low as 70pA, minimizing the impact on high impedance sources, especially suitable for interfaces with sensitive sensors or low current consumption systems. HOPA2335AIDR has excellent common mode rejection ratio (CMRR) and power suppression ratio (PSRR), effectively filtering out interference and providing pure output signals.]]></description>
</item>
<item>
	<title><![CDATA[HAD8629ARZ-REEL7(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/had8629arz-reel7-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:19:10</pubDate>
	<description><![CDATA[HAD8629ARZ-REEL7 is a high-quality dual channel precision operational amplifier designed for noise sensitive and high-precision applications in a compact SOP-8 package. Its 1.5MHz gain bandwidth product (GBP) ensures fast response capability in the intermediate frequency range, while also having an extremely low input offset voltage (Vos) of only 1 μ V, ensuring that the output signal is highly linear and close to the ideal value. The input bias current (Ib) is strictly controlled at 30pA, significantly reducing the load effect on high impedance sources, making it suitable for use with high impedance sensors or low current environments. This operational amplifier also provides excellent common mode rejection ratio (CMRR) and power suppression ratio (PSRR), effectively isolating interference and maintaining output stability.]]></description>
</item>
<item>
	<title><![CDATA[HAD8572ARZ-REEL7(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/had8572arz-reel7-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:19:00</pubDate>
	<description><![CDATA[HAD8572ARZ-REEL7 is a top-notch precision dual channel operational amplifier packaged in a compact SOP-8 package, designed specifically for high-precision measurement and control applications. Its 1.5MHz gain bandwidth product (GBP) ensures fast and stable signal amplification over a wide frequency range, while the ultra-low input offset voltage (Vos) of 1 μ V ensures excellent DC accuracy. The input bias current (Ib) of only 10pA minimizes the impact on the source impedance, making it particularly suitable for high impedance signal sources and low current consumption scenarios. This operational amplifier has Rail to Rail input/output capabilities and can provide linear signal processing performance across the entire power supply voltage range. HAD8572ARZ-REEL7, with its excellent low noise, low offset, and low drift characteristics, has become an ideal choice for scientific instruments, precision testing equipment, and other applications that require extremely high signal quality.]]></description>
</item>
<item>
	<title><![CDATA[HAD8552ARZ-REEL7(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/had8552arz-reel7-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:18:50</pubDate>
	<description><![CDATA[HAD8552ARZ-REEL7 is a high-performance precision operational amplifier with a dual channel configuration, packaged in a space saving SOP-8 package. This device stands out for its excellent low noise characteristics and extremely low offset error (1 μ V), making it particularly suitable for applications that require strict signal accuracy. With a gain bandwidth product (GBP) of 1.5MHz, it ensures fast and accurate signal amplification in the mid frequency range. Ultra low input bias current (Ib only 10pA) minimizes the impact on the source impedance, which is beneficial for high impedance sensor interfaces or long cable drives. HAD8552ARZ-REEL7 ensures comprehensive and accurate signal processing capabilities throughout the entire power supply voltage range with Rail to Rail input/output capability and zero drift technology. Suitable for applications such as data acquisition systems and laboratory equipment that require extremely high accuracy, bringing the ultimate signal fidelity to your design.]]></description>
</item>
<item>
	<title><![CDATA[HSY8121BABC(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/dc-dc-power-chip/">DC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/dc-dc-power-chip/hsy8121babc-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:13:49</pubDate>
	<description><![CDATA[This exquisite DC-DC buck converter is equipped with high-performance switching tubes and a wide voltage input range of 4.2V to 28V, providing a stable and efficient power solution for your various portable electronic devices. The step-down design ensures accurate current output, improves equipment operation efficiency and battery life. Suitable for upgrading high-end consumer goods, smart home accessories, and personal electronic products, it is an ideal choice for pursuing energy efficiency and reliability.]]></description>
</item>
<item>
	<title><![CDATA[HSY8120B1ABC(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/dc-dc-power-chip/">DC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/dc-dc-power-chip/hsy8120b1abc-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:13:39</pubDate>
	<description><![CDATA[This DC-DC buck converter is designed specifically for high-performance electronic products, using built-in switching tubes, with a wide operating voltage range from 4.2V to 18V, and can flexibly adapt to various power supply needs. Its step-down function ensures stable output, optimizes energy utilization, and is suitable for various precision electronic devices, helping you easily improve device performance and endurance. Compact and efficient, it is an ideal choice for mobile devices, handheld terminals, and IoT projects.]]></description>
</item>
<item>
	<title><![CDATA[HFP6291LR-G1(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/dc-dc-power-chip/">DC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/dc-dc-power-chip/hfp6291lr-g1-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:13:29</pubDate>
	<description><![CDATA[This DC-DC boost converter is specifically designed to improve electrical energy efficiency. The input voltage is wide, ranging from 2.6V to 24V, and the output voltage can be flexibly adjusted between 2.5V and 28V. The maximum output current can reach 4A, bringing strong power to your mobile devices, photography equipment, and outdoor electronic products. Equipped with an efficient boost mechanism, it is compact yet significantly enhances device endurance and performance, making it an ideal companion for users who pursue the ultimate experience, allowing every bit of energy to be used on the cutting edge.]]></description>
</item>
<item>
	<title><![CDATA[HMC33063ADR(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/dc-dc-power-chip/">DC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/dc-dc-power-chip/hmc33063adr-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:13:19</pubDate>
	<description><![CDATA[HMC33063ADR is a high-performance DC-DC power conversion chip designed for a wide range of voltage conversion applications in a compact SOP-8 package. It has both boosting and lowering functions, and can operate efficiently within a wide input voltage range (3V to 40V), adapting to various power supply environments. The output voltage can be flexibly adjusted to 1.25V to 40V, meeting the precise voltage requirements of different devices. This chip, with its excellent stability and high efficiency, has become an ideal choice for electronic design engineers in embedded systems, consumer electronics, communication devices, and other fields, achieving stable and reliable power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[LM2596T-ADJ(TO-220-5L/D)]]></title>
	<category domain="http://www.hxymos.com/en/dc-dc-power-chip/">DC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/dc-dc-power-chip/lm2596t-adj-to-220-5l-d-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:13:09</pubDate>
	<description><![CDATA[The LM2596T-ADJ DC-DC voltage regulator adopts TO-220-5L/D packaging and is designed specifically for flexible power supply solutions. The chip supports a maximum input voltage of 40V and adjustable output voltage to meet personalized needs, continuously providing up to 3A maximum current. Suitable for consumer electronics, embedded systems, communication devices, and other fields, achieving precise and customized power management. Integrated protection function, with low ripple and high efficiency characteristics, simplifies circuit layout, and ensures long-term stable operation of equipment. Original factory quality endows your project with outstanding power adaptability and performance!]]></description>
</item>
<item>
	<title><![CDATA[LM2596T-5.0(TO-220-5L/D)]]></title>
	<category domain="http://www.hxymos.com/en/dc-dc-power-chip/">DC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/dc-dc-power-chip/lm2596t-5-0-to-220-5l-d-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:12:59</pubDate>
	<description><![CDATA[The LM2596T-5.0 DC-DC voltage regulator adopts TO-220-5L/D packaging, specifically designed for efficient power conversion. This chip provides a stable 5.0V output, compatible with the highest input voltage of 40V, and continuously supplies a maximum 3A current. Suitable for various consumer electronics products, intelligent hardware, communication devices, etc., ensuring accurate and stable power supply. Built in protection mechanism, with advantages of low ripple and high efficiency, simplifies circuit design, and improves overall system stability. Original quality injects strong and reliable power support into your innovative project!]]></description>
</item>
<item>
	<title><![CDATA[LM2576T-ADJ(TO-220-5L/D)]]></title>
	<category domain="http://www.hxymos.com/en/dc-dc-power-chip/">DC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/dc-dc-power-chip/lm2576t-adj-to-220-5l-d-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:12:49</pubDate>
	<description><![CDATA[The LM2576T-ADJ DC-DC voltage regulator adopts TO-220-5L/D packaging and is designed for flexible power conversion. This adjustable output chip supports a maximum input voltage of 40V, making it easy to adjust the output to the desired voltage and continuously providing a maximum current of up to 3A. Suitable for various consumer electronics products, embedded systems, communication modules, etc., achieving precise and customized power management. Integrated protection mechanism, low ripple, high efficiency, simplified circuit integration, ensuring long-term stable operation. Produced by the original factory, empowering your project with excellent power flexibility and performance!]]></description>
</item>
<item>
	<title><![CDATA[LM2576T-5.0(TO-220-5L/D)]]></title>
	<category domain="http://www.hxymos.com/en/dc-dc-power-chip/">DC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/dc-dc-power-chip/lm2576t-5-0-to-220-5l-d-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:12:39</pubDate>
	<description><![CDATA[The LM2576T-5.0 DC-DC voltage regulator adopts a TO-220-5L/D package and is customized for high-efficiency power conversion. This chip provides a fixed 5.0V output, easily handling a maximum input voltage of 40V and continuously outputting up to 3A current. Widely used in consumer electronics, IoT devices, communication terminals, etc., ensuring stable and accurate power supply. Integrate multiple protection functions, with low ripple and high efficiency characteristics, simplify circuit design, and enhance system reliability. Original factory quality injects long-lasting and high-quality power guarantee into your electronic products!]]></description>
</item>
<item>
	<title><![CDATA[LM2576T-12(TO-220-5L/D)]]></title>
	<category domain="http://www.hxymos.com/en/dc-dc-power-chip/">DC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/dc-dc-power-chip/lm2576t-12-to-220-5l-d-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:12:30</pubDate>
	<description><![CDATA[The LM2576T-12 DC-DC buck power supply chip adopts the classic TO-220-5L/D packaging, specifically designed for efficient voltage conversion applications. This model provides a stable 12V output, supports a wide range of 40V input voltage, and continuously provides a maximum current of up to 3A. Suitable for various consumer electronic devices, intelligent hardware, communication modules, etc., ensuring a constant and reliable power supply. Built in multiple protections, low ripple, high efficiency, simplified circuit integration, and improved overall system stability. Original quality injects strong power support into your innovative project!]]></description>
</item>
<item>
	<title><![CDATA[LM2576S-12(TO-263-5L)]]></title>
	<category domain="http://www.hxymos.com/en/dc-dc-power-chip/">DC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/dc-dc-power-chip/lm2576s-12-to-263-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:12:20</pubDate>
	<description><![CDATA[The LM2576S-12 DC-DC voltage regulator adopts TO-263-5L packaging and is designed specifically for high-performance power conversion. This chip provides a fixed 12V output, suitable for input voltages up to 40V, and a maximum continuous output current of up to 3A. Suitable for various consumer electronics products, smart homes, data communication devices, etc., ensuring stable and efficient power supply. Built in protection mechanism, low ripple, high efficiency, helps simplify circuit design, and enhances system stability. Produced by the original factory, endow your project with excellent power management capabilities!]]></description>
</item>
<item>
	<title><![CDATA[LM2575T-5.0(TO-220-5L/D)]]></title>
	<category domain="http://www.hxymos.com/en/dc-dc-power-chip/">DC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/dc-dc-power-chip/lm2575t-5-0-to-220-5l-d-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:12:10</pubDate>
	<description><![CDATA[The LM2575T-5.0 DC-DC buck power supply chip is presented in a TO-220-5L/D package, specifically designed for efficient voltage conversion. This fixed output model provides a stable 5.0V output, easily handling the highest input voltage of 40V and continuously supplying a maximum 2A current. Suitable for various portable devices, consumer electronics, communication devices, etc., ensuring accurate and stable power supply. Built in protection mechanism, combining low ripple and high efficiency characteristics, simplifies circuit layout, and improves overall system reliability. Original quality injects lasting power into your project!]]></description>
</item>
<item>
	<title><![CDATA[LM2575S-ADJ(TO-263-5L)]]></title>
	<category domain="http://www.hxymos.com/en/dc-dc-power-chip/">DC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/dc-dc-power-chip/lm2575s-adj-to-263-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:12:00</pubDate>
	<description><![CDATA[The LM2575S-ADJ DC-DC voltage regulator adopts TO-263-5L packaging and is designed for efficient conversion. This adjustable output chip is compatible with a high input voltage of 40V and can flexibly adjust the output to the desired voltage, providing a stable current of up to 2A. Suitable for various electronic devices, such as consumer electronics, embedded systems, communication modules, etc., to achieve precise and reliable power management. Low ripple, high efficiency, simplify your circuit design, ensuring long-term stable operation. Original factory quality, instantly improve the power performance of your project!]]></description>
</item>
<item>
	<title><![CDATA[HACS712ELCTR-30A-T(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/current-sensor/">Current sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/current-sensor/hacs712elctr-30a-t-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:06:30</pubDate>
	<description><![CDATA[The working voltage range of this current sensor is 4.5V to 5.5V, designed specifically for measuring currents up to 30A. It has a high sensitivity of 66.6mV/A, ensuring the accuracy and real-time performance of the measurement results. Suitable for precision current monitoring scenarios, it is a powerful tool for optimizing system energy efficiency and enhancing circuit protection capabilities.]]></description>
</item>
<item>
	<title><![CDATA[HACS712ELCTR-20A-T(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/current-sensor/">Current sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/current-sensor/hacs712elctr-20a-t-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:06:21</pubDate>
	<description><![CDATA[This current sensor operates at a wide voltage range of 4.5V to 5.5V and can accurately measure currents up to 20A, with a typical sensitivity of 100mV/A, ensuring high accuracy and fast response of the measurement signal. Suitable for various electronic devices that require high-precision current monitoring, it is an ideal choice for improving system performance and protecting circuits.]]></description>
</item>
<item>
	<title><![CDATA[HACS712ELCTR-05B-T(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/current-sensor/">Current sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/current-sensor/hacs712elctr-05b-t-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:06:11</pubDate>
	<description><![CDATA[This compact current sensor is designed specifically for precision monitoring, with an optimized working voltage range of 4.5V to 5.5V. It can accurately measure currents up to 5A, and with a typical sensitivity of up to 185mV/A, it ensures efficient and accurate signal conversion, making it suitable for current monitoring needs in various precision electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[HTC4428AEOA713(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/gate-drive/">Gate drive</category>
	<link><![CDATA[http://www.hxymos.com/en/gate-drive/htc4428aeoa713-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:06:01</pubDate>
	<description><![CDATA[This gate driven integrated circuit is widely applicable to voltage platforms ranging from 4.5V to 25V, with a peak output current of 2A, ensuring fast and accurate signal amplification. Its characteristic of withstanding a maximum input negative pressure of -5V enhances the stability and adaptability of the circuit, making it an outstanding partner for achieving efficient electronic switching and signal control.]]></description>
</item>
<item>
	<title><![CDATA[HTC4427AEOA713(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/gate-drive/">Gate drive</category>
	<link><![CDATA[http://www.hxymos.com/en/gate-drive/htc4427aeoa713-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:05:51</pubDate>
	<description><![CDATA[This high-performance gate drive IC has a wide operating voltage range of 4.5V to 25V, coupled with a 2A peak output current capability, providing powerful driving force for various circuits. Its maximum input negative pressure tolerance of -5V enhances system compatibility and robustness, making it the preferred component for achieving precision control and efficient conversion.]]></description>
</item>
<item>
	<title><![CDATA[HCOS4426SR(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/gate-drive/">Gate drive</category>
	<link><![CDATA[http://www.hxymos.com/en/gate-drive/hcos4426sr-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:05:41</pubDate>
	<description><![CDATA[This gate driven integrated circuit covers a wide range of operating voltages from 4.5V to 25V and has a 2A peak output current capability, ensuring efficient driving capability. Supporting -5V maximum input negative pressure enhances circuit flexibility and reliability, making it an ideal solution for high-performance electronic switch control applications.]]></description>
</item>
<item>
	<title><![CDATA[HT1621(LQFP-48)]]></title>
	<category domain="http://www.hxymos.com/en/lcd-driver/">LCD driver</category>
	<link><![CDATA[http://www.hxymos.com/en/lcd-driver/ht1621-lqfp-48-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:05:31</pubDate>
	<description><![CDATA[HT1621 (LQFP48) is an advanced LCD driver chip, packaged in a compact QFP-48 package. Equipped with a 3-wire serial interface, it simplifies system integration and efficiently drives various LCD panels. The working voltage covers 2.4V to 5.2V and is widely compatible with various power configurations. Supports 1/2, 1/3, and 1/4 duty cycle settings to ensure clear and stable screen display. The extremely low operating current is only 60uA, helping to extend battery life, especially suitable for mobile devices and energy-saving applications. Choose HT1621 (LQFP48) to achieve a high energy efficiency and easy-to-use LCD display solution.]]></description>
</item>
<item>
	<title><![CDATA[HT1621(SSOP-48)]]></title>
	<category domain="http://www.hxymos.com/en/lcd-driver/">LCD driver</category>
	<link><![CDATA[http://www.hxymos.com/en/lcd-driver/ht1621-ssop-48-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:05:21</pubDate>
	<description><![CDATA[HT1621 (SSOP48), an efficient LCD driver solution, is packaged in a compact SSOP-48 package. Using a 3-wire serial interface to simplify system connections and easily drive various LCD displays. The working voltage range is wide, from 2.4V to 5.2V, suitable for various power supply environments. Supports 1/2, 1/3, and 1/4 duty cycle adjustment to ensure clear and stable display effects. The ultra-low working current is only 60uA, which significantly saves energy consumption and is particularly suitable for battery powered equipment and energy-saving applications. Choose HT1621 to create a cost-effective and low-power LCD display system.]]></description>
</item>
<item>
	<title><![CDATA[HMMUN2233LT1G(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/digital-transistor/">Digital transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/digital-transistor/hmmun2233lt1g-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:05:12</pubDate>
	<description><![CDATA[This digital transistor is equipped with a pre biased NPN structure, making it particularly suitable for digital circuit applications. The breakdown voltage of the collector emitter is as high as 50V, ensuring good safety and stability. The current capacity of the collector reaches 100mA, and the power consumption is as low as 246mW, making it very suitable for low-power and high-efficiency electronic designs, such as logic circuits, signal amplification, and power management modules. Its compact and efficient design provides reliable power for your electronic innovation projects, enhancing system performance.]]></description>
</item>
<item>
	<title><![CDATA[SN74LS164DR(SOP-14)]]></title>
	<category domain="http://www.hxymos.com/en/shift-register/">Shift register</category>
	<link><![CDATA[http://www.hxymos.com/en/shift-register/sn74ls164dr-sop-14-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:05:02</pubDate>
	<description><![CDATA[SN74LS164DR is a high-performance 8-bit serial to parallel shift register, packaged in a compact SOP-14 package. Specially designed for efficient data transmission, suitable for various digital systems. It accepts serial input data and converts it into parallel output through bitwise shifting, achieving rapid signal expansion and processing. The working voltage range is 4.75V to 5.25V, ensuring compatibility with mainstream logic circuits. This device contains a single component, each containing 8 independent bits, providing flexible bit width control. Choose SN74LS164DR to simplify your circuit design and improve data transmission efficiency.]]></description>
</item>
<item>
	<title><![CDATA[M3157(SOT-363)]]></title>
	<category domain="http://www.hxymos.com/en/multiplexer/">Multiplexer</category>
	<link><![CDATA[http://www.hxymos.com/en/multiplexer/m3157-sot-363-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:04:52</pubDate>
	<description><![CDATA[This high-performance analog switch adopts a single pole double throw (SPDT) structure, with a streamlined and efficient single channel design. Supports wide voltage operation, stable operation within the range of 1.65V to 5.5V, ensuring wide compatibility. The ultra fast conduction time of 5.2 nanoseconds enables seamless connection of signal transmission, making it particularly suitable for high-speed signal switching scenarios. Whether it is audio, video, or data signals, real-time and lossless routing conversion can be achieved, bringing a smooth signal processing experience to your electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HCC6201ST(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/hall-sensor/">hall sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/hall-sensor/hcc6201st-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:04:42</pubDate>
	<description><![CDATA[The power supply voltage of this Hall switch is 5V. The working point is ± 40Gs, and the release point is ± 32Gs. Capable of operating within a specific range of magnetic field strength and responding sensitively to changes in magnetic field. Suitable for various electronic products, it can be used for magnetic field detection, proximity sensing, etc., providing accurate magnetic field information feedback for devices.]]></description>
</item>
<item>
	<title><![CDATA[HSN74LVC1G3157DBVR(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/multiplexer/">Multiplexer</category>
	<link><![CDATA[http://www.hxymos.com/en/multiplexer/hsn74lvc1g3157dbvr-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-11 03:01:13</pubDate>
	<description><![CDATA[This analog switch/multiplexer features a single pole double throw (SPDT) design, providing precise control for your signal routing. Only one channel is needed to smoothly switch between a wide operating voltage range of 1.65V to 5.5V, with a fast response and a conduction time of only 5.2 nanoseconds. It is suitable for precision applications such as high-speed data acquisition and audio/video signal switching. With compact size and excellent performance, it is an ideal component for improving system flexibility and response speed, adding infinite possibilities to your electronic product design.]]></description>
</item>
<item>
	<title><![CDATA[AO3420(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3420-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:55:58</pubDate>
	<description><![CDATA[The AO3420 N-channel MOSFET adopts a compact SOT-23-3L package, which is particularly suitable for circuit designs with limited space. This device has a maximum operating voltage of 20V (VDSS) and can support continuous drain current (ID) of up to 6.5A, demonstrating excellent current processing capabilities. Its conduction resistance is only 14mR (RD (on)), which ensures high efficiency in high current applications while minimizing power loss. Widely used in electronic devices with high current and low impedance requirements such as power conversion, motor drives, and load switches.]]></description>
</item>
<item>
	<title><![CDATA[SQ2303ES-T1_GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sq2303es-t1_ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:55:45</pubDate>
	<description><![CDATA[The SQ2303ES-T1-GE3 MOSFET is a high-performance P-channel semiconductor device that adopts the exquisite SOT-23 packaging process, suitable for applications with strict space requirements. The device has superior characteristics, with a rated voltage of up to 30V and a continuous current carrying capacity of 4.1A. The outstanding feature is a conduction resistance of only 48m R, effectively ensuring the high efficiency and low power consumption of the system. It is widely used in power conversion, load switching, battery management, and various intelligent electronic devices, helping engineers achieve design solutions with high integration and excellent performance.“]]></description>
</item>
<item>
	<title><![CDATA[KMB3D0P30SA(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/kmb3d0p30sa-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:55:33</pubDate>
	<description><![CDATA[KMB3D0P30SA MOSFET is a high-performance P-channel MOSFET, packaged in a compact SOT-23 package, suitable for space limited designs. The working voltage can reach up to 30V, with a powerful current processing capability of 4.1A, meeting the needs of medium to high power applications. Its conduction resistance is as low as 48mR, ensuring high energy efficiency even under high current conditions. Widely used in power switches, battery protection circuits, and various load driving systems, it is an ideal semiconductor component for engineers to achieve precise current control.]]></description>
</item>
<item>
	<title><![CDATA[DMN2230U(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn2230u-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:55:21</pubDate>
	<description><![CDATA[DMN2230U MOSFET is a high-quality N-channel MOSFET designed in a miniaturized SOT-23 package, particularly suitable for compact circuit board layouts. The core parameters of the device are superior, with a maximum drain source voltage of 20V VDSS and a continuous drain current ID of 2.3A, ensuring stable transmission of large currents even at high voltages. In addition, the MOSFET has an ultra-low conduction resistance RD (on) of only 48mR, greatly reducing power consumption and improving energy utilization, making it an ideal choice for power conversion, motor control, and other high-efficiency electronic applications.]]></description>
</item>
<item>
	<title><![CDATA[DMN65D8LQ(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn65d8lq-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:55:08</pubDate>
	<description><![CDATA[DMN65D8LQ is a high-performance N-channel MOSFET designed for modern compact electronic devices in a miniature SOT-23 package. The device has a high voltage withstand (VDSS) of 60V and can withstand a continuous drain current (ID) of 0.3A. Its superior conductivity performance is reflected in the conduction resistance (RD (on) as low as 1000mR, effectively reducing energy consumption and improving system efficiency. Widely used in power management, load switches, motor drives and other circuits, it is an ideal semiconductor component for achieving efficient and energy-saving applications.]]></description>
</item>
<item>
	<title><![CDATA[SI1012R-T1-GE3(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si1012r-t1-ge3-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:54:56</pubDate>
	<description><![CDATA[SI1012R-T1-GE3 is a high-quality N-channel MOSFET packaged in a miniature SOT-523 package. It has excellent electrical performance, with a working voltage VDSS of up to 20V, capable of carrying a maximum continuous current ID of 0.8A, and has an extremely excellent conduction resistance RD (on) of only 100mR, which helps to improve system energy efficiency and reduce energy consumption. This MOSFET is suitable for power conversion, battery powered devices, smart home products, and other space limited but high-performance switching functions. It is an ideal choice for engineers to optimize circuit design.]]></description>
</item>
<item>
	<title><![CDATA[AON6407(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon6407-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:54:43</pubDate>
	<description><![CDATA[The best-selling AON6407 P-channel MOSFET is packaged in a sturdy and durable DFN5X6-8L package, ensuring excellent heat dissipation performance and high reliability. The device parameters strongly support a drain source withstand voltage (VDSS) of up to 30V, with a peak current capacity of up to 110A, while its ultra-low conduction resistance RD (on) is only 3m R, achieving excellent energy efficiency performance.]]></description>
</item>
<item>
	<title><![CDATA[DMNH4015SSD(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmnh4015ssd-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:54:31</pubDate>
	<description><![CDATA[DMNH4015SSD is an efficient N+N channel MOSFET designed for high integration in modern electronic devices using a compact SOP-8 package. This device has a rated voltage of 40V VDSS and can support a continuous current ID of 12A, demonstrating excellent power processing performance. Its conduction resistance RD (on) is only 16m R, effectively reducing power loss and improving the overall energy efficiency of the system. Widely used in power conversion, load switch control, and medium current drive fields, DMNH4015SSD is your preferred semiconductor component for designing efficient and energy-saving circuits.]]></description>
</item>
<item>
	<title><![CDATA[FDD6635(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdd6635-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:54:19</pubDate>
	<description><![CDATA[FDD6635 is a powerful and efficient N-channel MOSFET designed specifically for handling high current applications, packaged in TO-252-2L. This device has a high rated voltage VDSS of 40V and can stably carry a continuous current ID of 60A, fully demonstrating its excellent power transmission performance. Of particular note, its conduction resistance RD (on) is only 7.7m R, significantly reducing energy consumption and improving system efficiency. FDD6635 is an ideal semiconductor solution suitable for high demand scenarios such as power conversion and motor drive.]]></description>
</item>
<item>
	<title><![CDATA[IRFR110TRPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr110trpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:54:07</pubDate>
	<description><![CDATA[The IRFR110TRPBF N-channel MOSFET is packaged in TO-252-2L and is suitable for medium current applications in 100V high-voltage systems. The device has a drain source voltage (VDSS) of up to 100V and a continuous drain current (ID) of 15A, ensuring stable operation under high voltage conditions. Although the conduction resistance RD (on) is 100mR, it can still maintain appropriate energy efficiency under the corresponding current load. This MOSFET is widely used in fields such as switching power supplies, motor drives, battery management systems, and is the preferred semiconductor component for engineers seeking a balance between performance and cost in the design process.]]></description>
</item>
<item>
	<title><![CDATA[NP15P04SLG(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/np15p04slg-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:53:54</pubDate>
	<description><![CDATA[This field-effect transistor is P-type. The current is 25A, which can meet a certain current demand. Voltage up to 40V, suitable for various voltage conditions. The typical internal resistance value is 31mR. VGS is 20V. Suitable for various electronic products, it can play a role in power management, signal processing, etc., ensuring stable operation of circuits.]]></description>
</item>
<item>
	<title><![CDATA[DMP3036SFV(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp3036sfv-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:53:42</pubDate>
	<description><![CDATA[DMP3036SFV is an advanced P-channel MOSFET, packaged in an ultra small DFN3X3-8L package, suitable for high-density circuit board layout. It has a voltage rating of up to 30V VDSS and can stably provide a continuous drain current ID of 25A under harsh conditions, highlighting strong power processing performance. Its conduction resistance RD (on) is as low as 16m R, effectively reducing internal power loss in the system and improving overall efficiency. This MOSFET is widely used in power conversion, battery management systems, and efficient motor drives, making it an ideal solution for modern high-performance electronic design.]]></description>
</item>
<item>
	<title><![CDATA[AONS21321(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aons21321-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:53:30</pubDate>
	<description><![CDATA[AONS21321 is a high-performance P-channel MOSFET packaged in advanced DFN5X6-8L, with a high voltage withstand VDSS of 30V and support for continuous current IDs up to 50A, especially suitable for high current switching applications. Its outstanding feature is that the conduction resistance RD (on) is only 9mR, which helps significantly reduce system power consumption and improve overall efficiency. This device is widely used in switching power supplies, motor drives, battery management systems, and other fields, making it an ideal choice for high power density and high-efficiency design solutions.]]></description>
</item>
<item>
	<title><![CDATA[AOD4186(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod4186-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:53:17</pubDate>
	<description><![CDATA[The AOD4186 N-channel MOSFET adopts the classic TO-252-2L package, which has excellent heat dissipation performance and compatibility. This device provides a rated voltage VDSS of up to 40V and a continuous drain current ID of 50A, designed specifically for high-power applications. Its uniqueness lies in its conductivity resistance RD (on) of only 11m R, significantly reducing power consumption and improving system energy efficiency. Widely applicable in fields such as power conversion, motor drive, and battery management systems, AOD4186 MOSFETs, as high-performance semiconductor components, provide powerful and reliable current control solutions for your design.]]></description>
</item>
<item>
	<title><![CDATA[FDS6690AS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds6690as-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:53:05</pubDate>
	<description><![CDATA[FDS6690AS is a high-performance N-channel MOSFET, packaged in SOP-8 format, dedicated to providing efficient power conversion and motor drive solutions. Its main characteristics include a maximum operating voltage VDSS of 30V, the ability to withstand continuous currents of up to 15A, and a remarkable low on resistance RD (on) of only 8mR, ensuring excellent energy efficiency and low loss performance even during high current operation. This MOSFET is an ideal choice for medium and low voltage switching circuit applications due to its excellent electrical parameters and compact packaging design.]]></description>
</item>
<item>
	<title><![CDATA[NVMFS5C466N(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvmfs5c466n-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:52:53</pubDate>
	<description><![CDATA[NVMFS5C466N is a high-performance N-channel MOSFET, packaged in DFN5X6-8L, with a compact size that meets various compact design requirements. This device has a drain source voltage (VDSS) of 40V and a continuous drain current (ID) of up to 60A, ensuring strong current processing capability. Its conduction resistance is only 6.9m R (RD (on)), greatly improving system energy efficiency and reducing energy waste. This MOSFET is widely used in power conversion, motor drive, battery management systems, and other fields, making it an ideal semiconductor component choice for achieving high power and low loss.]]></description>
</item>
<item>
	<title><![CDATA[GKI04076(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/gki04076-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:52:40</pubDate>
	<description><![CDATA[GKI04076 is a high-performance N-channel MOSFET, designed in a compact DFN5X6-8L package, particularly suitable for space limited design projects. The device has superior electrical performance, including a 40V drain source breakdown voltage (VDSS) and a continuous drain current (ID) of up to 60A, and its on resistance (RD (on) as low as 6.9m R greatly improves the energy efficiency of the system. This MOSFET is widely used in power conversion, motor drive, LED lighting and other fields, making it an ideal choice for your pursuit of high power density and high-efficiency solutions.]]></description>
</item>
<item>
	<title><![CDATA[FDN336P(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdn336p-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:52:25</pubDate>
	<description><![CDATA[FDN336P is a P-channel MOSFET packaged in SOT-23, with compact and efficient characteristics. Its rated voltage can reach up to 20V and continuous current can reach 2.3A, ensuring strong power processing capability. The conduction resistance is only 95m R, effectively reducing power consumption and improving system energy efficiency. Suitable for various low voltage and high current switching circuit designs, it is the ideal choice for your electronic project.]]></description>
</item>
<item>
	<title><![CDATA[FDMC510P(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdmc510p-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:52:11</pubDate>
	<description><![CDATA[The FDMC510P P-channel MOSFET adopts a compact DFN3X3-8L packaging form, achieving excellent space utilization and heat dissipation performance. The device operates at a voltage VDSS of up to 20V and can withstand a strong 48A continuous drain current ID, demonstrating excellent current processing capabilities. Its core technological advantage lies in its ultra-low conduction resistance RD (on), which is only 7.5m R, effectively reducing system internal resistance and improving work efficiency, especially suitable for high current applications such as power conversion and motor drive. The FDMC510P MOSFET provides a powerful semiconductor solution for your design with its excellent current carrying capacity and energy-saving effect.]]></description>
</item>
<item>
	<title><![CDATA[NTD5867NLT4G(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntd5867nlt4g-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:51:59</pubDate>
	<description><![CDATA[The NTD5867NLT4G N-channel MOSFET is packaged in an economical and efficient TO-252-2L package, suitable for various power control and motor drive applications. The device has powerful specifications and a rated voltage of 60V VDSS, which can stably handle continuous current IDs up to 20A. Its highlight lies in the fact that the conduction resistance RD (on) is only 27m R, aimed at improving energy conversion efficiency and reducing system losses. This MOSFET, with its outstanding performance, is widely used in power converters, motor drives, switch regulators, and other fields, making it a powerful assistant for building high-performance electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[FDD8424H(TO-252-4L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdd8424h-to-252-4l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:51:46</pubDate>
	<description><![CDATA[The N+P channel MOSFET of model FDD8424H adopts the classic packaging TO-252-4L, providing a stable power solution for various electronic devices. The device has a rated voltage of 40V VDSS and a high current carrying capacity of 20A, ensuring stable performance in high-voltage and high current applications. Of particular note, its conduction resistance RD (on) is only 18m R, effectively improving energy utilization efficiency and reducing losses. This MOSFET is widely used in power management, motor drive, power conversion and other fields, and is a key component in building efficient and energy-saving systems.]]></description>
</item>
<item>
	<title><![CDATA[IRF7101PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7101pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:51:34</pubDate>
	<description><![CDATA[The N+N channel MOSFET of model IRF7101PBF adopts standard SOP-8 packaging, which is suitable for widely used circuit board layouts. This device has a rated voltage of 20V VDSS and can support stable 4A continuous current ID, ensuring stable operation under medium power conditions. Its conduction resistance RD (on) is 45m R, providing good system efficiency performance. This MOSFET is widely used in power conversion, load switch control, logic level conversion and other fields, and is an ideal semiconductor component for building efficient and reliable electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SQ2309ES-T1_GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sq2309es-t1_ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:51:22</pubDate>
	<description><![CDATA[SQ2309ES-T1-GE3 is a P-channel MOSFET, packaged in a compact SOT-23 package, suitable for high-density circuit board layout. The device provides a drain source withstand voltage (VDSS) of 60V and can stably transmit 2A drain current (ID) under low conduction resistance of 160mR (RD (on). Suitable for battery protection, load switching, power management and other fields, this MOSFET brings higher flexibility and reliability to your circuit design with its excellent voltage withstand capacity and efficient current control performance.“]]></description>
</item>
<item>
	<title><![CDATA[SQ2348ES-T1_GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sq2348es-t1_ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:51:09</pubDate>
	<description><![CDATA[SQ2348ES-T1_GE3 is an N-channel MOSFET designed for modern high-efficiency circuits in an economical and practical SOT-23 package. The device has a drain source voltage (VDSS) of 30V, can handle continuous drain current (ID) of up to 5.8A, and has excellent low on resistance performance, only 22mR (RD (on)). It is widely used in switching power supplies, motor drives, and various high-power electronic systems. With excellent current carrying capacity and high performance, this MOSFET is the ideal semiconductor component in your design.“]]></description>
</item>
<item>
	<title><![CDATA[AO3494(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3494-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:50:57</pubDate>
	<description><![CDATA[AO3494 is an efficient N-channel MOSFET designed for high energy efficiency and low-power electronic applications in a compact SOT-23 package. This device has a maximum drain source voltage (VDSS) of 20V and can stably handle a continuous drain current (ID) of 2.3A. Its excellent 48m R on resistance (RD (on) ensures low power consumption and high energy conversion efficiency in various applications. Widely used in power conversion, load switch control, battery protection circuits and other fields, it is an ideal semiconductor component for miniaturized and energy-saving electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SQ2310ES-T1_GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sq2310es-t1_ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:50:45</pubDate>
	<description><![CDATA[SQ2310ES-T1-GE3 is an efficient N-channel MOSFET designed for high power density and low power electronics in a small SOT-23 package. The device has a maximum drain source voltage (VDSS) of 20V and can stably handle a continuous drain current (ID) of 6A. Coupled with its excellent 22m R on resistance (RD (on)), it ensures excellent power conversion efficiency and low power consumption performance. It is widely used in power management, motor drives, battery protection systems, and other fields, and is an ideal semiconductor component for achieving miniaturization and high-performance electronic solutions.“]]></description>
</item>
<item>
	<title><![CDATA[IRLR3636PBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlr3636pbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:50:32</pubDate>
	<description><![CDATA[The IRLR36PBF is a high-end N-channel MOSFET, packaged in the industry standard TO-252-2L package, designed to meet the needs of modern high-performance electronic devices. The device operates at a voltage of up to 60V (VDSS), can withstand continuous drain current of up to 80A (ID), and exhibits excellent low resistance characteristics in a conductive state, only 6.5m R (RD (on)), effectively reducing power loss and improving system efficiency. With its strong stability and wide applicability, the IRLR36PBF is very suitable for applications in switching power supplies, motor drives, battery protection, and other fields, and is the preferred component for creating high-performance, low-energy electronic systems.“]]></description>
</item>
<item>
	<title><![CDATA[IRFR1018EPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr1018epbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:50:20</pubDate>
	<description><![CDATA[IRFR1018EPBF is an efficient N-channel MOSFET, packaged in a compact and widely used TO-252-2L style, particularly suitable for space limited and high-density circuit board designs. This device has powerful performance parameters, including a maximum drain source voltage (VDSS) of 60V and a continuous drain current (ID) of up to 80A. While ensuring high current processing capability, its excellent conduction resistance is only 6.5m R (RD (on)), ensuring low power consumption and efficient operation. Widely used in power management, inverters, switching power supplies and other fields, it is your ideal choice for optimizing system performance and improving energy utilization.]]></description>
</item>
<item>
	<title><![CDATA[IRFR1205PBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr1205pbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:50:08</pubDate>
	<description><![CDATA[The IRFR1205PBF N-channel MOSFET adopts the industry‘s mainstream TO-252-2L packaging form, with good heat dissipation performance and compact size, suitable for various circuit design needs. This device has a rated voltage of 60V VDSS and a continuous current ID processing capability of up to 30A, ensuring stable operation in high-power environments. Its low conduction resistance of 22mR results in higher energy conversion efficiency and lower system losses. Widely used in power conversion, motor drive, load switching and other scenarios, it undergoes strict quality inspection before leaving the factory to ensure the high performance and reliability of each MOSFET.]]></description>
</item>
<item>
	<title><![CDATA[IRF7201PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7201pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:49:55</pubDate>
	<description><![CDATA[The IRF7201PBF N-channel MOSFET adopts SOP-8 packaging and is designed for high-power, high-efficiency circuits. The device features a maximum drain source voltage of 30V (VDSS) and a continuous current carrying capacity of 8.5A. Its conduction resistance is as low as 14m R, ensuring excellent energy efficiency and low power consumption performance in high current applications. It is widely used in power conversion, motor drive, load switching and other scenarios, providing strong support for your circuit design with excellent current processing ability and reliable electrical performance.“]]></description>
</item>
<item>
	<title><![CDATA[IRF7413ZPBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7413zpbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:49:43</pubDate>
	<description><![CDATA[The IRF7413ZPBF MOSFET model adopts SOP-8 packaging, which is compact and efficient, and is designed to optimize the layout for modern electronic devices. This N-channel device can operate stably at a maximum voltage of 30V, providing a continuous current carrying capacity of up to 15A. Its outstanding advantage lies in its ultra-low conduction resistance of only 7.5mR, which effectively improves system efficiency and reduces energy consumption. It is widely used in many fields such as power conversion, high current switch control, motor drive, etc. It is an ideal semiconductor component for building efficient and energy-saving circuits.]]></description>
</item>
<item>
	<title><![CDATA[DMN2016UTS(TSSOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn2016uts-tssop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:49:30</pubDate>
	<description><![CDATA[DMN2016UTS is a high-speed, low impedance N+N channel MOSFET designed in a space saving TSSOP-8 package, suitable for modern compact electronic designs. The working voltage can reach up to 20V and provide a continuous current of up to 7.5A, especially suitable for power switches, load drives, and other occasions. Its outstanding conduction resistance is only 11.5m R, greatly improving system efficiency and reducing power consumption. Choose DMN2016UTS MOSFET to help you achieve high-performance and energy-saving circuit design.]]></description>
</item>
<item>
	<title><![CDATA[AOTE32136C(TSSOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aote32136c-tssop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:49:18</pubDate>
	<description><![CDATA[AOTE32136C is an efficient N+N channel MOSFET that adopts a space saving TSSOP-8 packaging style, making it particularly suitable for use in compact circuit designs. The key performance indicators of the device include a maximum drain source voltage VDSS of 20V, which can support continuous drain current ID of up to 7.5A, and has an extremely low conduction resistance RD (on) of only 11.5mR, which helps to significantly reduce system power consumption and improve overall energy efficiency. This MOSFET is widely used in switching power supply conversion, motor drive, LED dimming, and many electronic devices with medium to low voltage and medium current.]]></description>
</item>
<item>
	<title><![CDATA[DMN2019UTS(TSSOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn2019uts-tssop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:49:06</pubDate>
	<description><![CDATA[DMN2019UTS is a high-quality N+N channel MOSFET designed for miniaturization in modern electronic devices using a space saving TSSOP-8 package. Its core technical parameters include a maximum drain source voltage VDSS of 20V, which can withstand continuous drain current ID of up to 7.5A, and has excellent conductivity performance. The conductivity resistance is as low as 11.5mR, ensuring reduced power consumption and improved overall energy efficiency during operation. Widely used in power conversion, motor drive, load switch, and various medium to low voltage, medium current circuit designs, it performs excellently.]]></description>
</item>
<item>
	<title><![CDATA[AO8822(TSSOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao8822-tssop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:48:54</pubDate>
	<description><![CDATA[AO8822 is a high-performance N+N channel MOSFET that adopts a sophisticated TSSOP-8 packaging form, suitable for modern compact circuit design requirements. Its main characteristics include a maximum drain source voltage VDSS of 20V, the ability to carry a stable 7.5A drain current ID, and excellent conductivity. The conductivity resistance is as low as 11.5mR, effectively reducing energy loss and improving overall system efficiency. Widely used in switch mode power supplies, motor drive control, LED dimming, and various electronic devices with medium to low voltage and medium current, it is known for its high reliability and low loss.]]></description>
</item>
<item>
	<title><![CDATA[DMG6968UTS(TSSOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg6968uts-tssop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:48:41</pubDate>
	<description><![CDATA[DMG6968UTS is a high-performance N+N channel MOSFET that uses a space saving TSSOP-8 package, making it particularly suitable for compact circuit designs. Its core parameters include a maximum drain source voltage VDSS of 20V, which can carry continuous drain current ID of up to 7.5A, and has a low conduction resistance RD (on) of 11.5mR, which helps to reduce power consumption and improve system efficiency. Widely used in switch mode power supply conversion, motor drive control, load switch circuits, and various electronic devices with medium to low voltage and medium current.]]></description>
</item>
<item>
	<title><![CDATA[AO8820(TSSOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao8820-tssop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:48:29</pubDate>
	<description><![CDATA[AO8820 is an N+N channel MOSFET, packaged in an economical and practical TSSOP-8 format, suitable for various precision electronic devices. The device parameters are excellent, with a maximum drain source voltage VDSS of 20V, which can provide a stable 7.5A drain current ID. It also has a low conduction resistance RD (on) of 11.5mR, effectively reducing power loss and improving system energy efficiency. Commonly used in switch mode power supplies, motor drives, LED lighting control, and other low voltage, medium current switch circuit designs.]]></description>
</item>
<item>
	<title><![CDATA[AOD66923(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod66923-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:48:17</pubDate>
	<description><![CDATA[AOD66923 is a high-power N-channel MOSFET designed for high current and high voltage applications, using an efficient heat dissipation TO-252-2L package. This device has a drain source voltage of up to 100V VDSS and excellent 70A continuous drain current ID capability, which can meet stringent power transmission requirements. Its highlight lies in the ultra-low 8.2mR conduction resistance RD (on), which effectively reduces energy loss and significantly improves system efficiency.]]></description>
</item>
<item>
	<title><![CDATA[IRLML2030PBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml2030pbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:48:05</pubDate>
	<description><![CDATA[IRLML2030PBF is a high-performance N-channel MOSFET, packaged in a small SOT-23 package, suitable for various compact electronic designs. The key characteristics of this device include a maximum operating voltage of 30V VDSS, which can provide continuous drain current of up to 4A; Its conduction resistance RD (on) is as low as 29m R, ensuring low power loss and high efficiency performance in high current applications. Widely used in many scenarios such as power conversion, motor drive, load switching, etc., it is the ideal MOSFET choice for your pursuit of high integration and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[BSH108(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsh108-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:47:52</pubDate>
	<description><![CDATA[BSH108 is an N-channel MOSFET designed with a compact SOT-23 package, providing flexible solutions for modern high-density electronic designs. Its key performance parameters include a maximum working voltage of VDSS up to 30V, supporting a continuous drain current of 4A, ensuring strong driving force; The conduction resistance RD (on) is as low as 29m R, achieving high efficiency and low power consumption. Widely used in power conversion, motor drive, battery management systems and other fields, it is an ideal MOSFET device for your pursuit of high performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[SM2306SRL(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm2306srl-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:47:40</pubDate>
	<description><![CDATA[SM2306SRL is a high-performance N-channel MOSFET designed in a compact SOT-23 package, particularly suitable for the design needs of miniaturized electronic devices. The key features of this device include a maximum operating voltage of VDSS up to 30V, providing stable 4A drain current output; Its conduction resistance RD (on) as low as 29m R ensures excellent energy efficiency and low power consumption performance. Widely used in power management, motor drives, battery charging controllers, and other applications, it is an ideal MOSFET solution for your pursuit of high integration and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[ZXMN3A01F(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zxmn3a01f-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:47:28</pubDate>
	<description><![CDATA[ZXMN3A01F is a high-performance N-channel MOSFET designed in a compact SOT-23 package for efficient and space saving solutions. This device can operate stably at a VDSS voltage of 30V, providing a maximum continuous drain current of 4A, meeting high power requirements. Its conduction resistance RD (on) is as low as 29m R, effectively improving energy conversion efficiency and reducing losses. Widely suitable for various occasions such as power conversion, motor drive, load switch, etc., it is an ideal semiconductor component for achieving high-performance and energy-saving electronic design.]]></description>
</item>
<item>
	<title><![CDATA[ZXM61N03F(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zxm61n03f-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:47:16</pubDate>
	<description><![CDATA[ZXM61N03F is a high-performance N-channel MOSFET that uses a miniaturized SOT-23 package, specifically designed for circuit design needs with limited space. The device can operate stably at a VDSS voltage of 30V, providing a continuous drain current of 4A and demonstrating strong power processing capabilities. Its highlight lies in the low conduction resistance RD (on) of only 29m R, which effectively improves system energy efficiency and reduces power consumption. Widely used in power conversion, motor drive, load switch and other scenarios, it is an ideal semiconductor component for achieving high efficiency and miniaturization in electronic device design.]]></description>
</item>
<item>
	<title><![CDATA[NTR4503N(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntr4503n-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:47:03</pubDate>
	<description><![CDATA[NTR4503N is a high-performance N-channel MOSFET designed in a compact SOT-23 package, tailored for high efficiency and space sensitive design solutions. This device supports a drain source voltage (VDSS) of up to 30V and can withstand a continuous drain current (ID) of 4A, demonstrating excellent current processing performance. Of particular note, its ultra-low conduction resistance (RD (on) of 29m R results in lower system energy consumption and higher efficiency. Suitable for various occasions such as power conversion, load switching, and motor drive, it is the best semiconductor component choice for pursuing efficiency and energy conservation.]]></description>
</item>
<item>
	<title><![CDATA[NDS355N(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nds355n-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:46:51</pubDate>
	<description><![CDATA[NDS355N is an N-channel MOSFET packaged in SOT-23, achieving high-performance output in a compact volume. It supports a maximum drain source voltage of 30V (VDSS) and can continuously provide a drain current of 4A (ID) at full load, demonstrating strong current handling capabilities. In addition, the ultra-low conduction resistance (RD (on) of 29m R ensures excellent energy efficiency and reduces unnecessary energy loss. This MOSFET is suitable for various fields such as power conversion, motor drive, load switching, etc. It is an ideal choice for high integration and high-efficiency electronic design.]]></description>
</item>
<item>
	<title><![CDATA[NDS355AN(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nds355an-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:46:39</pubDate>
	<description><![CDATA[NDS355AN is an N-channel MOSFET designed specifically for modern high integration electronics, using a sophisticated SOT-23 package. This device operates stably at a VDSS voltage of 30V and can provide up to 4A of continuous drain current, demonstrating strong power processing performance. Its conduction resistance RD (on) is only 29m R, greatly improving energy conversion efficiency and reducing system losses. Suitable for various application scenarios such as power conversion, motor drive, load switch, etc., it is an ideal semiconductor solution that balances high efficiency and miniaturization.]]></description>
</item>
<item>
	<title><![CDATA[NDS351N(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nds351n-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:46:26</pubDate>
	<description><![CDATA[NDS351N is a high-performance N-channel MOSFET that uses an economical and practical SOT-23 package to meet various compact circuit design requirements. It has a maximum drain source voltage of 30V, VDSS, and can withstand stable 4A drain current, demonstrating excellent current processing capabilities. And its low conduction resistance RD (on) of 29m R has achieved its high efficiency and low power consumption characteristics, widely applicable to power conversion, motor drive, and other high energy efficiency requirements, making it an ideal switch control component in your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[NDS351AN(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nds351an-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:46:14</pubDate>
	<description><![CDATA[NDS351AN is an efficient N-channel MOSFET designed in a compact SOT-23 package, particularly suitable for applications with limited space and high performance requirements. This device supports a maximum drain source voltage VDSS of 30V and can handle drain current up to 4A in a continuous state. The core technological highlight is the extremely low 29m R conduction resistance RD (on), which greatly improves energy utilization efficiency and reduces system losses. Widely used in power conversion, motor drive, and various load switch applications, it is an ideal semiconductor component for your pursuit of high performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[MGSF1N03LT1(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/mgsf1n03lt1-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:46:02</pubDate>
	<description><![CDATA[MGSF1N03LT1 is a high-quality N-channel MOSFET designed in a space saving SOT-23 package, particularly suitable for modern compact circuit designs. The device has a VDSS withstand voltage of 30V and can withstand a continuous drain current of 4A, demonstrating excellent performance. Its outstanding feature is the ultra-low conduction resistance RD (on) of only 29m R, which effectively improves system energy efficiency and reduces losses. This MOSFET is suitable for various scenarios such as power conversion, load switch control, etc., and has become an ideal component choice for many electronic designs due to its high performance and energy-saving characteristics.]]></description>
</item>
<item>
	<title><![CDATA[IRLML2803PBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml2803pbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:45:49</pubDate>
	<description><![CDATA[The IRLML2803PBF MOSFET is a high-performance N-channel device packaged in a miniaturized SOT-23 package, suitable for space limited design requirements. This device has a maximum withstand voltage of 30V (VDSS), can provide a stable 4A drain current (ID), and exhibits a on resistance (RD (on) as low as 29m R in the on state. This MOSFET, with its excellent switching performance and low power consumption characteristics, is widely used in power management, load switching, and control circuits of various electronic devices, helping to optimize system efficiency and upgrade energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[FDN361BN(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdn361bn-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:45:37</pubDate>
	<description><![CDATA[The FDN361BN N-channel MOSFET adopts a compact SOT-23 package, achieving a perfect fusion of compact size and high performance. The device operates stably under 30V VDSS and can withstand continuous drain current of up to 4A, demonstrating excellent performance. Its core advantage lies in its ultra-low conduction resistance RD (on) of 29m R, which significantly optimizes system efficiency, reduces energy consumption, and is suitable for various demanding power switches, load switching, and battery management systems. It is an ideal choice for engineers to design with high efficiency.]]></description>
</item>
<item>
	<title><![CDATA[BSS316N(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss316n-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:45:25</pubDate>
	<description><![CDATA[BSS316N is an N-channel MOSFET designed in a space saving SOT-23 package, suitable for compact circuit design. The device supports a maximum drain source voltage (VDSS) of up to 30V and can safely handle 4A continuous drain current (ID), demonstrating superior current carrying capacity. Its low on resistance (RD (on) of 29m R means that it will effectively reduce power consumption and improve system energy efficiency during operation. Widely used in various electronic devices such as power conversion, motor drives, load switches, etc., it is an ideal semiconductor component with high integration and energy-saving performance.]]></description>
</item>
<item>
	<title><![CDATA[FDN357N(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdn357n-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:45:13</pubDate>
	<description><![CDATA[FDN357N is an N-channel MOSFET that uses a miniature SOT-23 package, making it particularly suitable for compact circuit designs. This device has a maximum drain source voltage of 30V (VDSS) and a continuous drain current of 4A (ID), ensuring strong current processing performance. Its conduction resistance (RD (on)) is as low as 29m R, effectively reducing power consumption and improving system efficiency. FDN357N MOSFETs are widely used in various electronic devices such as power converters, motor drives, load switches, etc. They are the ideal semiconductor components for building efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[DMN3110S(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn3110s-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:45:00</pubDate>
	<description><![CDATA[DMN3110S is an N-channel MOSFET designed specifically for space saving circuits using a compact SOT-23 package. The device features a maximum drain source voltage (VDSS) of 30V and a continuous drain current (ID) of 4A, demonstrating excellent current processing capabilities. Its 29 m R conduction resistance (RD (on)) design effectively reduces system losses and achieves higher energy efficiency ratios. DMN3110S is widely used in power management, motor drive, load switching, and other fields, making it an ideal choice for compact and efficient semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[ST2304SRG(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/st2304srg-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:44:48</pubDate>
	<description><![CDATA[ST2304SRG is an N-channel MOSFET designed specifically for modern compact electronics, using a small SOT-23 package. The device has a maximum drain source voltage of 30V (VDSS) and can handle 4A continuous drain current (ID) at high efficiency, demonstrating strong current processing capabilities. Especially outstanding is that its conduction resistance (RD (on)) is only 29m R, ensuring low power consumption and improving overall energy efficiency during operation. This MOSFET is widely used in power conversion, load switching, motor drive and other fields, and is your ideal partner for seeking efficient and energy-saving semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[FDN359AN(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdn359an-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:44:36</pubDate>
	<description><![CDATA[FDN359AN is a high-performance N-channel MOSFET packaged in an economical SOT-23 package, particularly suitable for compact circuit designs. The device has a maximum drain source voltage (VDSS) of 30V and can continuously output a drain current (ID) of 4A to meet different power requirements. Its striking feature is that the conduction resistance (RD (on)) is as low as 29m R, ensuring a significant reduction in power consumption during operation and improving system energy efficiency. FDN359AN MOSFETs are widely used in power conversion, motor drives, battery management systems, and other fields, making them an ideal choice for pursuing efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[PMV45EN2R(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/pmv45en2r-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:44:24</pubDate>
	<description><![CDATA[PMV45EN2R is a high-performance N-channel MOSFET, packaged in a compact SOT-23 package, particularly suitable for circuit designs with strict space utilization requirements. Its core technical indicators include a maximum drain source breakdown voltage of 30V (VDSS) and a continuous drain current of 4A (ID), demonstrating strong current processing performance. More noteworthy is that the device has a superior on resistance (RD (on) of only 29m R, aimed at minimizing power loss and improving system efficiency. This MOSFET is widely used in electronic products that require high-efficiency and low impedance components, such as power converters, chargers, and motor drives.]]></description>
</item>
<item>
	<title><![CDATA[DMN3051L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn3051l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:44:11</pubDate>
	<description><![CDATA[DMN3051L is an N-channel MOSFET that adopts a compact SOT-23 packaging form, suitable for compact circuit layout requirements. Its key parameters include a maximum drain source voltage (VDSS) of 30V, which can stably carry a continuous drain current (ID) of 4A, fully meeting the needs of medium to high power application scenarios. The uniqueness lies in its low conduction resistance (RD (on) of 29m R, which helps to improve system efficiency and reduce energy loss. DMN3051L MOSFETs are widely used in circuit design for power conversion, load switching, and various portable electronic devices due to their excellent electrical performance.]]></description>
</item>
<item>
	<title><![CDATA[Si2304BDS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2304bds-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:43:59</pubDate>
	<description><![CDATA[Si2304BDS-T1-GE3 is a high-performance N-channel MOSFET designed for compact electronic devices using SOT-23 packaging. The device has a maximum drain source voltage of 30V (VDSS) and a continuous drain current of 4A (ID), providing powerful current processing capabilities. Its conduction resistance (RD (on)) as low as 29m R is beneficial for reducing system power consumption and improving energy efficiency. Suitable for various applications such as power conversion, motor drive, load switch, etc., it is an ideal semiconductor component that pursues high integration and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[Si2304BDS-T1-E3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2304bds-t1-e3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:43:47</pubDate>
	<description><![CDATA[Si2304BDS-T1-E3 is an N-channel MOSFET packaged in a small SOT-23 package, providing an efficient solution for compact circuit design. The device has a maximum drain source voltage (VDSS) of 30V and can withstand a continuous drain current (ID) of 4A, ensuring strong current processing capability. Its conduction resistance (RD (on)) is only 29m R, effectively reducing system power consumption and improving energy efficiency performance. Widely used in power conversion, motor drive, load switching and other scenarios, it is an ideal high integration, low resistance semiconductor component.]]></description>
</item>
<item>
	<title><![CDATA[Si2366DS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2366ds-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:43:34</pubDate>
	<description><![CDATA[Si2366DS-T1-GE3 is an N-channel MOSFET designed for modern precision electronic devices in a compact SOT-23 package. The highlights of the device include a maximum operating voltage of VDSS up to 30V, which can stably deliver a drain current of 4A, meeting high power requirements; The conduction resistance RD (on) is only 29m R, ensuring low power consumption and high efficiency operation. Widely used in power conversion, motor drive, battery protection and other fields, it is the ideal N-channel MOSFET choice for your pursuit of high-performance and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[Si2304DDS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2304dds-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:43:22</pubDate>
	<description><![CDATA[Si2304DDS-T1-GE3 is an efficient N-channel MOSFET, packaged in a small SOT-23 package, suitable for circuit designs with limited space. This device provides a maximum drain source voltage of 30V (VDSS) and can support 4A continuous drain current (ID), ensuring excellent current handling performance. Its conduction resistance (RD (on)) is as low as 29m R, effectively reducing power consumption and improving system efficiency. Widely used in various scenarios such as power conversion, motor drive, load switching, etc., it is the ideal choice for your highly integrated and energy-saving semiconductor solution.]]></description>
</item>
<item>
	<title><![CDATA[Si2316DS-T1-E3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2316ds-t1-e3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:43:10</pubDate>
	<description><![CDATA[Si2316DS-T1-E3 is a MOSFET using advanced N-channel technology, packaged in a compact SOT-23, particularly suitable for space limited design needs. Its electrical characteristics are excellent, with a maximum drain source voltage of 30V (VDSS) and the ability to withstand a continuous drain current of 4A (ID), ensuring strong current processing performance. The conduction resistance (RD (on)) of 29m R reduces the power consumption of the device during operation, improving overall energy efficiency. This MOSFET is widely used in power conversion, motor drive, load switching and other scenarios, making it an ideal choice for efficient and energy-saving semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[Si2316BDS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2316bds-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:42:57</pubDate>
	<description><![CDATA[Si2316BDS-T1-GE3 is an efficient N-channel MOSFET designed for modern miniaturized electronics in a compact SOT-23 package. Its key features include a maximum drain source voltage of 30V (VDSS), which can withstand a continuous drain current of 4A (ID), ensuring strong current processing capability. The conduction resistance (RD (on)) is only 29m R, effectively reducing power consumption and improving system energy efficiency. This MOSFET is widely used in power conversion, load switching, motor drive and other scenarios, making it an ideal component for high integration and low-power solutions with excellent performance and stability.]]></description>
</item>
<item>
	<title><![CDATA[Si2306BDS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2306bds-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:42:45</pubDate>
	<description><![CDATA[Si2306BDS-T1-GE3 is an N-channel MOSFET designed for high integration circuits using a lightweight SOT-23 package. The device provides a maximum drain source voltage (VDSS) of 30V and can withstand a continuous drain current (ID) of 4A, ensuring stable and reliable power transmission. Its conduction resistance (RD (on)) is only 29m R, significantly reducing system power consumption and improving overall energy efficiency. This MOSFET, with its excellent electrical performance, is widely used in various electronic devices such as power converters, load switches, and motor drives, making it an ideal choice for compact and high-performance semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[FDS6975(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds6975-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:42:33</pubDate>
	<description><![CDATA[FDS6975 is a high-performance P+P channel MOSFET designed in a space saving SOP-8 package, suitable for high integration applications in various electronic devices. This device provides a rated voltage of 30V VDSS and a continuous current ID of 11A, demonstrating strong power control capabilities. Its 14m R conduction resistance RD (on) ensures low power consumption and high energy efficiency performance during operation. FDS6975 is widely used in power conversion, load switching, battery management systems, and other fields, making it an ideal semiconductor component for building efficient and energy-saving circuits.]]></description>
</item>
<item>
	<title><![CDATA[SI4925DDY-T1-GE3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4925ddy-t1-ge3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:42:20</pubDate>
	<description><![CDATA[SI4925DDY-T1-GE3 is a P+P channel MOSFET, designed in a compact SOP-8 package for efficient integration in modern electronic devices. This device has a rated voltage of 30V VDSS and a continuous current ID of 11A, demonstrating excellent power control performance. Its conduction resistance RD (on) is 14m R, which can effectively control power consumption and improve system efficiency. Widely used in power conversion, battery management, load switching, and other situations that require efficient and low energy MOSFETs, it is an ideal semiconductor component for achieving precise control and energy-saving design.]]></description>
</item>
<item>
	<title><![CDATA[FDS4897C(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds4897c-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:42:08</pubDate>
	<description><![CDATA[The FDS4897C N+P channel MOSFET adopts a sophisticated SOP-8 packaging, specifically designed for efficient and space saving design solutions. This device has a high voltage withstand VDSS of 40V and supports a continuous drain current ID of up to 7.2A, ensuring stable operation under various load conditions. Its unique advantage lies in its ultra-low conduction resistance RD (on) of 23mR, which effectively reduces energy loss and improves system efficiency. It is widely used in power conversion, battery protection, motor drive and other applications that require high current control accuracy and energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[DMC4050SSD(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmc4050ssd-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:41:56</pubDate>
	<description><![CDATA[DMC4050SSD is a high-performance N+P channel MOSFET designed for high efficiency and small volume applications in a compact SOP-8 package. This device provides a 40V drain source voltage VDSS and can stably carry a 7.2A drain current ID, meeting the current processing requirements under various circuit conditions. Its core competitiveness lies in its low conduction resistance RD (on) of only 23mR, which effectively reduces power consumption and improves system energy efficiency. It is widely used in power conversion, battery management systems, motor drive control, and other precision and efficient electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SI1032R-T1-GE3(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si1032r-t1-ge3-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:41:44</pubDate>
	<description><![CDATA[SI1032R-T1-GE3 is a high-end N-channel MOSFET designed in a compact SOT-523 package, suitable for limited space applications. The device has distinct characteristics, with a 20V VDSS voltage, capable of carrying 0.8A continuous current ID. Its excellent conduction resistance RD (on) is as low as 180mR, ensuring efficient and low-power operation. This MOSFET is suitable for various fields such as power conversion, battery management systems, consumer electronics, etc. It is an ideal semiconductor device choice to improve system performance and optimize energy utilization.]]></description>
</item>
<item>
	<title><![CDATA[AON7409(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon7409-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:41:19</pubDate>
	<description><![CDATA[AON7409 is a high-end P-channel MOSFET packaged in DFN5X6-8L, aimed at achieving a perfect fusion of high efficiency and compact design. The maximum working voltage VDSS supported by the device is 30V, with a powerful current processing capability of 70A, and a wide range of applications. Of particular note is its 6mR ultra-low conduction resistance RD (on), which significantly reduces power loss while ensuring high current transmission, thereby improving the overall energy efficiency of the system.]]></description>
</item>
<item>
	<title><![CDATA[AON6413(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon6413-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:41:07</pubDate>
	<description><![CDATA[AON6413 is a high-performance P-channel MOSFET designed for high power density and low energy applications using a miniaturized DFN5X6-8L package. It has a rated voltage of 30V VDSS and can easily carry continuous currents of up to 70A, fully demonstrating strong current conduction ability. Especially outstanding is its ultra-low conduction resistance RD (on) of only 6mR, greatly optimizing system energy efficiency and reducing losses. Whether it‘s power conversion, battery management systems, or high-efficiency energy-saving devices, AON6413 can become your ideal semiconductor component choice with its excellent electrical performance.]]></description>
</item>
<item>
	<title><![CDATA[SM3404SRL(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm3404srl-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:40:54</pubDate>
	<description><![CDATA[SM3404SRL is a high-performance N-channel MOSFET, packaged in a space saving SOT-23-3L package, suitable for integration into compact electronic designs. Its specifications are outstanding, with a rated voltage of up to 30V VDSS, and it can sustain a current ID of 5.8A, reflecting strong power processing performance. Of particular concern is that the conduction resistance RD (on) of the device is only 22m R, which helps to significantly reduce power loss and improve system energy efficiency. SM3404SRL is suitable for various applications such as power conversion, load switching, and low-voltage motor drive, and is the ideal semiconductor component for optimizing circuit design.]]></description>
</item>
<item>
	<title><![CDATA[AO3406(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3406-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:40:42</pubDate>
	<description><![CDATA[AO3406 is an N-channel MOSFET that uses a small SOT-23-3L package, making it particularly suitable for circuit layouts in limited spaces. The rated voltage VDSS of this device is 30V, and the peak current ID is as high as 5.8A, demonstrating superior power driving capability. Its conduction resistance RD (on) is as low as 22m R, effectively reducing the internal resistance of the system and improving overall energy efficiency. AO3406 is an ideal semiconductor component for applications such as power conversion, load switch control, and low-voltage motor drive, meeting diverse circuit requirements with stable performance and compact design.]]></description>
</item>
<item>
	<title><![CDATA[SSM3K335R(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ssm3k335r-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:40:30</pubDate>
	<description><![CDATA[SSM3K335R is an N-channel MOSFET designed specifically for modern compact circuits using a space saving SOT-23-3L package. This device provides a rated voltage of 30V VDSS and a continuous current ID capability of up to 5.8A, ensuring excellent power processing performance. Its conduction resistance RD (on) is 22m R, committed to reducing energy loss while operating at high efficiency. Very suitable for applications such as power management, load switching, and low-voltage motor drive, it is the ideal choice for you seeking high cost-effective semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[ST2304(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/st2304-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:40:18</pubDate>
	<description><![CDATA[The N-channel MOSFET of model ST2304 adopts a miniaturized SOT-23-3L package, which is extremely suitable for compact electronic device design. This device has powerful electrical performance parameters, with a working voltage of up to 30V VDSS and a continuous current ID carrying capacity of up to 5.8A, ensuring stable operation under high load conditions. Its highlight lies in its ultra-low conduction resistance RD (on), which is only 22mR, helping to reduce power consumption and improve overall system efficiency. Widely used in power management, switch regulation, motor drive and other application fields, it is an ideal choice for engineers to achieve high efficiency and energy-saving design.]]></description>
</item>
<item>
	<title><![CDATA[SSM3K333R(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ssm3k333r-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:40:06</pubDate>
	<description><![CDATA[The N-channel MOSFET of model SSM3K333R adopts a compact and lightweight SOT-23-3L package, specially designed for the miniaturization design needs of modern electronic products. This device has superior electrical performance, with a maximum operating voltage of 30V VDSS and a continuous current ID of up to 5.8A, ensuring stable and reliable operation in high current environments. The conduction resistance RD (on) is only 22mR, significantly reducing power loss and improving system energy efficiency. Widely used in power conversion, motor drive, load switch and other fields, it is an ideal semiconductor component choice for engineers pursuing high efficiency and low energy consumption.]]></description>
</item>
<item>
	<title><![CDATA[AO3404A(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3404a-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:39:53</pubDate>
	<description><![CDATA[The high-performance N-channel MOSFET with model AO3404A adopts a space saving SOT-23-3L package, making it easy to integrate on compact circuit boards. Its key electrical parameters perform excellently, with a maximum operating voltage of VDSS up to 30V and a continuous current ID carrying capacity of up to 5.8A, fully meeting the requirements of high-power applications. Especially outstanding is that the conduction resistance RD (on) is only 22mR, achieving higher work efficiency with extremely low power loss. This MOSFET is widely used in various fields such as power conversion, motor control, LED driving, etc. It is the ideal component choice for improving circuit performance and optimizing energy utilization.]]></description>
</item>
<item>
	<title><![CDATA[ZXMN6A25K(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zxmn6a25k-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:39:41</pubDate>
	<description><![CDATA[The ZXMN6A25K N-channel MOSFET adopts a compact TO-252-2L packaging process, which has excellent electrical performance. It has a drain source withstand voltage (VDSS) of up to 60V and a continuous drain current (ID) of 20A, capable of carrying high current loads. In addition, the conduction resistance is only 27m R, effectively improving energy utilization and reducing heat generation. This MOSFET is suitable for various scenarios such as switching power supplies and motor drives. With its excellent electrical characteristics and reliability, it has become an ideal choice for modern high-efficiency electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[ZXMN6A08K(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zxmn6a08k-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:39:29</pubDate>
	<description><![CDATA[ZXMN6A08K is an N-channel MOSFET that uses a compact and practical TO-252-2L package, suitable for various high-density circuit designs. The device can stably carry a drain current (ID) of 20A at a maximum drain source voltage (VDSS) of 60V, demonstrating excellent current processing capability. A low conductivity resistance of 27m R effectively improves system efficiency and reduces energy consumption. Widely used in power conversion, motor drive and other applications, it is an ideal semiconductor component for achieving high-performance and energy-saving electronic solutions.]]></description>
</item>
<item>
	<title><![CDATA[SVD2955(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/svd2955-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:39:17</pubDate>
	<description><![CDATA[SVD2955 is a P-channel MOSFET, packaged in TO-252-2L, designed to provide excellent power management solutions for high-performance electronic devices. It has a maximum withstand voltage of 60V (VDSS), can support continuous current flow of up to 10A under harsh conditions, and has a conductivity resistance as low as 125mR (RD (on)), significantly improving overall energy efficiency and reliability. This MOSFET, with its excellent performance and compact packaging design, is suitable for power conversion, load switching, and other medium and low voltage circuit applications, making it your ideal semiconductor component choice.]]></description>
</item>
<item>
	<title><![CDATA[STP607D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/stp607d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:39:04</pubDate>
	<description><![CDATA[STP607D is a high-performance P-channel MOSFET, packaged in the industry standard TO-252-2L, with strong adaptability and easy integration. Its core parameters include a maximum working voltage of up to 60V VDSS, which can withstand 10A continuous current, and a conducting resistance of only 125mR, aiming to achieve lower energy consumption and higher work efficiency. This MOSFET is widely used in power conversion, motor drive, and various medium and low voltage switching circuits due to its excellent switching performance and durability, and is one of the ideal components for modern electronic design.]]></description>
</item>
<item>
	<title><![CDATA[STP4925(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/stp4925-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:38:52</pubDate>
	<description><![CDATA[The STP4925 model MOSFET adopts SOP-8 packaging form and is equipped with advanced P+P channel technology, designed specifically for medium to high current applications. The device has a drain source voltage of 30V (VDSS) and can operate stably under 11A continuous drain current (ID), meeting various high current requirements. Its prominent feature is that the conduction resistance is as low as 14mR (RD (on)), effectively improving system energy efficiency and reducing unnecessary energy loss. Widely used in power conversion, motor drive control, and various high-efficiency switching power supply circuits, it is an ideal semiconductor component choice for optimizing circuit design and achieving energy-saving goals.]]></description>
</item>
<item>
	<title><![CDATA[STN4402(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/stn4402-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:38:40</pubDate>
	<description><![CDATA[STN4402 is a high-performance N-channel MOSFET designed in a compact SOP-8 package for efficient power conversion, motor drive, and other applications. This device has a maximum operating voltage of 30V VDSS, can smoothly handle continuous currents up to 15A, and stands out with an ultra-low on resistance RD (on) of 8mR, ensuring excellent energy efficiency and low power consumption even under high current conditions. This MOSFET is an ideal component for medium and low voltage switching circuits due to its excellent electrical performance and miniaturization packaging.]]></description>
</item>
<item>
	<title><![CDATA[STN4130(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/stn4130-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:38:27</pubDate>
	<description><![CDATA[The STN4130 N-channel MOSFET adopts TO-252-2L packaging, with a compact structure and easy integration. The device exhibits strong power processing capabilities with a maximum drain source voltage of 60V (VDSS) and a continuous drain current of 20A (ID), making it particularly suitable for high-voltage and high current applications. The conduction resistance is as low as 27m R, which is beneficial for improving system efficiency, reducing energy consumption, and reducing operating temperature. This MOSFET is widely used in power management, motor drive and other fields, and is an ideal semiconductor component that balances performance and reliability.]]></description>
</item>
<item>
	<title><![CDATA[STD6NF10(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/std6nf10-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:38:15</pubDate>
	<description><![CDATA[STD6NF10 N-channel MOSFET, packaged in TO-252-2L, designed specifically for medium current applications in 100V high-voltage systems. The device has a drain source voltage (VDSS) of up to 100V and a continuous drain current (ID) of 15A, ensuring stable and reliable operation in high voltage environments. The conduction resistance RD (on) is 100mR, which is not an ultra-low resistance value, but sufficient to meet most medium power conversion needs and achieve good cost-effectiveness. Widely used in various fields such as switching power supplies, motor drives, battery management systems, etc., it is an ideal semiconductor component that combines performance and cost advantages.]]></description>
</item>
<item>
	<title><![CDATA[NVTFWS015N04C(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvtfws015n04c-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:38:03</pubDate>
	<description><![CDATA[The NVTFWS015N04C N-channel MOSFET adopts a small DFN3X3-8L package, integrating efficient heat dissipation and space optimization characteristics. The device supports a 40V working voltage VDSS and can withstand a high current ID of 60A, making it particularly suitable for high current applications. The core highlight is that the conduction resistance RD (on) is only 6.9m R, which helps the system reduce power consumption and improve energy efficiency performance. Widely used in power conversion, motor drive and other fields, NVTFWS015N04C MOSFETs are the ideal semiconductor component choice for designers to achieve efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[NVTFS015N04C(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvtfs015n04c-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:37:51</pubDate>
	<description><![CDATA[The NVTFS015N04C N-channel MOSFET adopts a compact DFN3X3-8L package, providing excellent heat dissipation performance and space saving advantages. This device supports a working voltage of 40V VDSS and has the ability to handle 60A continuous drain current IDs, making it particularly suitable for high current applications. Its conduction resistance RD (on) is as low as 6.9 m R, significantly reducing system power loss and improving overall energy efficiency. Widely used in power conversion, motor drive, new energy and other fields, NVTFS015N04C MOSFETs are key components for achieving efficient and energy-saving semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[NVTFS5C478NL(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvtfs5c478nl-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:37:38</pubDate>
	<description><![CDATA[The NVTFS5C478NL N-channel MOSFET adopts DFN3X3-8L packaging, providing excellent heat dissipation performance and space utilization. This device supports a working voltage of 40V VDSS and can carry a continuous drain current ID of up to 60A, suitable for high current application scenarios. Its outstanding feature is the ultra-low conduction resistance RD (on) of only 6.9 m R, which effectively reduces system energy consumption and improves efficiency. Widely used in fields such as power conversion and motor drive, NVTFS5C478NL MOSFET is an ideal choice for efficient and energy-saving semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[NTTFS5C478NL(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nttfs5c478nl-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:37:26</pubDate>
	<description><![CDATA[The NTTFS5C478NL N-channel MOSFET adopts a DFN3X3-8L small package design, which has excellent space utilization and heat dissipation efficiency. The device operates at a voltage VDSS of up to 40V and supports a continuous drain current ID of 60A, making it particularly suitable for high current conditions. Its inherent advantage is that the conduction resistance RD (on) is only 6.9m R, significantly reducing system power consumption and improving overall energy efficiency ratio. This MOSFET is widely used in various fields such as power conversion and motor drive, and is an ideal component for achieving efficient and low loss semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[STD16NF06(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/std16nf06-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:37:14</pubDate>
	<description><![CDATA[STD16NF06 is an N-channel MOSFET, packaged in a compact TO-252-2L package, with excellent heat dissipation performance and space optimization design. The device can withstand a continuous drain current (ID) of up to 20A at a maximum drain source voltage (VDSS) of 60V, making it suitable for high-voltage and high current applications. A low conductivity resistance of 27m R helps to improve system energy efficiency and reduce power loss. Widely used in power conversion, motor drive and other fields, it is an ideal choice for engineers to create efficient and energy-saving electronic products.]]></description>
</item>
<item>
	<title><![CDATA[STD12NF06LT4(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/std12nf06lt4-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:37:01</pubDate>
	<description><![CDATA[STD12NF06LT4 is a high-performance N-channel MOSFET, packaged in an economical and efficient TO-252-2L package, suitable for various electronic design needs. Under the maximum drain source voltage (VDSS) of 60V, it can provide a stable 20A drain current (ID), especially suitable for high voltage and high current application environments. Its low on resistance of 27m R helps to improve system energy efficiency and reduce unnecessary power consumption. Widely used in power conversion, motor drive and other fields, it is a reliable component for building high-quality and energy-saving electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[STD10PF06(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/std10pf06-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:36:49</pubDate>
	<description><![CDATA[STD10PF06 is a P-channel MOSFET that uses standard TO-252-2L packaging, suitable for various circuit integration needs. The device has a high rated drain source voltage (VDSS) of 60V and can stably carry a drain current (ID) of 10A. It exhibits a conducting resistance of 125m R (RD (on)) in a conducting state. This MOSFET, with its superior voltage resistance and good current carrying capacity, is widely used in power conversion, load switching, inverters, and various other power control applications. It is an ideal component for building efficient and reliable circuits.]]></description>
</item>
<item>
	<title><![CDATA[STD10NF10T4(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/std10nf10t4-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:36:37</pubDate>
	<description><![CDATA[STD10NF10T4 N-channel MOSFET, designed for medium power, high voltage applications in standard TO-252-2L packaging. This device has a maximum drain source voltage (VDSS) of 100V and can support a continuous drain current (ID) of 15A, ensuring stable operation in high voltage environments. Its conduction resistance RD (on) is 100mR, which is not the lowest in the industry, but it can still demonstrate good performance in moderate current applications. Suitable for applications such as switching power supply conversion, battery management systems, and general motor drives, it is a preferred semiconductor device that combines performance and cost-effectiveness.]]></description>
</item>
<item>
	<title><![CDATA[ST16N10(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/st16n10-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:36:25</pubDate>
	<description><![CDATA[ST16N10 N-channel MOSFET, using a compact TO-252-2L package, suitable for medium current applications in 100V high voltage environments. The device provides a drain source voltage (VDSS) of up to 100V and a continuous drain current (ID) of 15A, ensuring stable performance in high-voltage systems. Its conduction resistance RD (on) is 100mR, although the resistance value is relatively high, it can still maintain high efficiency within a reasonable current range. Widely used in fields such as switching power supplies, motor drives, battery management systems, etc., it is an excellent semiconductor component that emphasizes cost and performance balance.]]></description>
</item>
<item>
	<title><![CDATA[AOSS32136C(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aoss32136c-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:36:12</pubDate>
	<description><![CDATA[AOSS32136C N-channel MOSFET adopts a compact SOT-23-3L package, designed specifically for high integration circuits. The device has a rated voltage of 20V (VDSS) and can withstand continuous drain current (ID) of up to 6.5A, demonstrating strong current processing performance. Its outstanding 14mR conduction resistance (RD (on)) ensures low power consumption and high efficiency even during high current operation. Suitable for power conversion, motor drive, and other electronic systems that require high current processing capability and focus on energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[SUD45P03-09-GE3(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sud45p03-09-ge3-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:36:00</pubDate>
	<description><![CDATA[SUD45P03-09-GE3 is a P-channel MOSFET, packaged in a TO-252-2L package with efficient heat dissipation, suitable for high current application environments. This device supports a drain source voltage (VDSS) of up to 30V and can safely handle a continuous current of 70A, demonstrating excellent power transmission capabilities. Its striking feature is the conduction resistance (RD (on) of only 8mR, which effectively improves system energy efficiency and reduces power loss. It is an ideal component choice for power switches, motor drives, and high-power electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[NTMD3P03(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntmd3p03-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:35:48</pubDate>
	<description><![CDATA[The NTMD3P03 MOSFET model adopts advanced P+P channel technology and is packaged in a miniaturized SOP-8 casing, which is highly favored for its excellent integration and space utilization. The device operates stably, with a rated voltage of up to 30V VDSS, providing a sustainable high current processing capacity of 5.3A. At the same time, it has excellent conduction resistance RD (on), as low as 35mR, significantly improving work efficiency and reducing energy consumption. This MOSFET is widely suitable for various application scenarios such as power management and motor drive, helping you achieve system performance upgrades and energy-saving goals.]]></description>
</item>
<item>
	<title><![CDATA[SM4953PRL(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm4953prl-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:35:35</pubDate>
	<description><![CDATA[The SM4953PRL MOSFET adopts high-quality P+P channel technology and adopts exquisite SOP-8 packaging form, providing excellent space utilization for modern electronic devices. This device has outstanding voltage tolerance, with a rated VDSS value of 30V, and can withstand a continuous drain current of 5.3A. Its excellent on resistance is only 35mR, ensuring low power consumption and high efficiency performance during operation. This MOSFET is widely used in power control, motor drive and other scenarios, and is an ideal semiconductor component for improving the overall efficiency of the system.]]></description>
</item>
<item>
	<title><![CDATA[SM4803APRL(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm4803aprl-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:35:23</pubDate>
	<description><![CDATA[SM4803APRL is a P+P channel MOSFET, packaged in SOP-8, suitable for various circuit designs with limited space. The device parameters include a maximum drain source voltage (VDSS) of 30V, providing a stable drain current (ID) of 5.3A, and having a conduction resistance of 35m R (RD (on), achieving a balance between high efficiency and low power consumption. This MOSFET is widely used in power management, load switch control, battery protection systems, and other fields, making it an ideal component for building efficient and energy-saving circuits.]]></description>
</item>
<item>
	<title><![CDATA[DMP3085LSD(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp3085lsd-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:35:11</pubDate>
	<description><![CDATA[The MOS transistor model DMP3085LSD is equipped with advanced P+P channel technology and packaged in a miniaturized SOP-8 form, providing more layout possibilities for your circuit design. This device is specifically designed for high-performance applications, with a rated voltage of 30V VDSS and a continuous drain current ID of up to 5.3A. At the same time, with its excellent conduction resistance RD (on) as low as 35mR, it greatly improves power conversion efficiency and reduces power consumption. This MOSFET is widely used in power control, load switching and other scenarios, and is a reliable component choice for building high-quality electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[IRF7316TRPBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7316trpbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:34:59</pubDate>
	<description><![CDATA[The IRF7316TRPBF MOSFET adopts high-performance P+P channel technology and is packaged in a space saving SOP-8 form, which is particularly suitable for modern compact circuit design requirements. Its key parameters include a working voltage VDSS of up to 30V, a continuous current ID capacity of 5.3A, and a conducting resistance of only 35mR, demonstrating excellent energy conversion efficiency and low power consumption characteristics. This MOSFET is an ideal choice for power management, switch regulation, and other applications, helping your electronic products achieve higher performance and better energy consumption performance.]]></description>
</item>
<item>
	<title><![CDATA[IRF7316PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7316pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:34:46</pubDate>
	<description><![CDATA[The IRF7316PBF MOS transistor features a carefully selected P+P channel design and adopts SOP-8 packaging, with a compact structure and easy integration. This device performs excellently at a rated voltage of 30V, with a maximum continuous drain current of 5.3A and a conduction resistance as low as 35mR, effectively reducing power loss and improving energy efficiency. Suitable for various medium and low voltage switch circuits and power management applications, providing strong support for your electronic system with stable performance and efficient conversion capability.]]></description>
</item>
<item>
	<title><![CDATA[NTTFS4939N(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nttfs4939n-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:34:34</pubDate>
	<description><![CDATA[NTTFS4939N is an N-channel MOSFET designed in a compact DFN3X3-8L package, specifically designed for efficient and space limited circuit applications. Stable operation under 30V voltage VDSS, providing up to 100A continuous current processing capability, demonstrating excellent power transmission performance. Its highlight lies in its ultra-low conduction resistance RD (on) of 4mR, which effectively reduces power consumption and improves system energy efficiency. NTTFS4939N is suitable for power conversion, motor drive, and other applications that require high-performance and low loss semiconductor components.]]></description>
</item>
<item>
	<title><![CDATA[CSD17577Q3A(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/csd17577q3a-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:34:22</pubDate>
	<description><![CDATA[CSD17577Q3A is an N-channel MOSFET designed with advanced DFN3X3-8L packaging technology for high power density and low-power applications. This device operates stably under a voltage of 30V VDSS and can handle continuous currents up to 100A, demonstrating strong power transmission performance. Its highlight lies in the industry-leading 4mR ultra-low conduction resistance RD (on), which effectively reduces power loss and improves overall system efficiency. CSD17577Q3A is widely used in power conversion, motor drive, and other situations that require high-performance MOSFETs, making it an ideal choice for building efficient and energy-saving circuits.]]></description>
</item>
<item>
	<title><![CDATA[NVTFS4C06N(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvtfs4c06n-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:34:10</pubDate>
	<description><![CDATA[The NVTFS4C06N model N-channel MOSFET adopts a compact DFN3X3-8L packaging design, integrating high integration and efficient heat dissipation performance, especially suitable for the refined wiring needs of modern electronic devices. The rated voltage VDSS of this device is 30V and can handle continuous current IDs up to 100A, demonstrating excellent power transmission efficiency. Its 4mR ultra-low conduction resistance effectively improves system energy efficiency and reduces power consumption.]]></description>
</item>
<item>
	<title><![CDATA[NTMFS4C025N(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntmfs4c025n-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:33:56</pubDate>
	<description><![CDATA[The NTMFS4C025N N-channel MOSFET adopts DFN3X3-8L packaging to achieve miniaturization and efficient heat dissipation, meeting the design requirements of high-density circuit boards. The rated voltage VDSS of the device is 30V, and it has a strong 100A continuous current ID carrying capacity, demonstrating excellent power control performance. Its ultra-low conduction resistance of 4mR helps to significantly improve system energy efficiency and reduce power loss.]]></description>
</item>
<item>
	<title><![CDATA[CSD16340Q3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/csd16340q3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:33:44</pubDate>
	<description><![CDATA[CSD16340Q3 model N-channel MOSFET adopts advanced DFN3X3-8L packaging technology, combining miniaturization and efficient heat dissipation, designed specifically for high-density electronic devices. This device has a rated voltage of 30V VDSS and can stably carry a continuous current ID of 100A, demonstrating strong power processing capabilities. Its conduction resistance is only 4mR, greatly improving system energy efficiency and reducing power consumption.]]></description>
</item>
<item>
	<title><![CDATA[NTTFS4C06N(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nttfs4c06n-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:33:32</pubDate>
	<description><![CDATA[The NTTFS4C06N model N-channel MOSFET adopts advanced DFN3X3-8L packaging technology, integrating compact size and efficient heat dissipation, suitable for various high-density electronic designs. The device has a rated voltage of 30V VDSS and can withstand continuous current ID of up to 100A, fully demonstrating powerful power transmission performance. Its unique advantage lies in its ultra-low conduction resistance of only 4mR, effectively improving system energy efficiency and reducing losses.]]></description>
</item>
<item>
	<title><![CDATA[NTTFS4937N(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nttfs4937n-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:33:19</pubDate>
	<description><![CDATA[The NTTFS4937N model N-channel MOSFET adopts advanced DFN3X3-8L packaging technology, which not only has a compact volume but also excellent heat dissipation performance, suitable for high integration electronic device applications. This device has a rated voltage of 30V VDSS and provides a continuous current ID of up to 100A, demonstrating excellent power processing capabilities. Its conduction resistance is as low as 4mR, greatly improving energy efficiency and reducing system losses.]]></description>
</item>
<item>
	<title><![CDATA[NTTFS4824N(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nttfs4824n-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:33:07</pubDate>
	<description><![CDATA[The NTTFS4824N model N-channel MOSFET adopts DFN3X3-8L packaging, combined with miniaturization and efficient heat dissipation characteristics, making it particularly suitable for high-density circuit board design. The device provides a rated voltage of 30V VDSS and supports a maximum continuous current ID of 100A, demonstrating strong power transmission performance. Especially outstanding is that its conduction resistance is as low as 4mR, effectively improving system efficiency and reducing power consumption.]]></description>
</item>
<item>
	<title><![CDATA[NVTFS5C680NL(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvtfs5c680nl-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:32:55</pubDate>
	<description><![CDATA[NVTFS5C680NL is a high-performance N-channel MOSFET designed for high-power and low-energy applications in a compact DFN3X3-8L package. This device has a 60V drain source voltage VDSS and a powerful continuous current ID processing capability of 30A, ensuring stable operation in high current scenarios. Its significant advantage is that the conduction resistance RD (on) is as low as 24mR, effectively reducing system losses and improving overall energy efficiency. Widely used in many fields such as switching power supplies and motor drives, it is an ideal semiconductor component for efficient and energy-saving circuit design.]]></description>
</item>
<item>
	<title><![CDATA[NVTFS5826NL(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvtfs5826nl-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:32:43</pubDate>
	<description><![CDATA[NVTFS5826NL is a high-performance N-channel MOSFET designed in a small DFN3X3-8L package, particularly suitable for high power density and low-power applications. This device has a 60V drain source voltage VDSS and a powerful continuous current ID processing capability of 30A, ensuring stable operation under high voltage and high current conditions. Its excellent conduction resistance RD (on) is only 24mR, effectively reducing power loss and significantly improving system efficiency. This MOSFET is widely used in switching power supplies, motor drives, battery management systems, and other fields, making it an ideal choice for efficient and high-quality circuit design.]]></description>
</item>
<item>
	<title><![CDATA[NTTFS030N06C(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nttfs030n06c-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:32:31</pubDate>
	<description><![CDATA[The NTTFS030N06C MOSFET is a high-performance semiconductor component that utilizes advanced N-channel technology, packaged in a compact DFN3X3-8L, suitable for space limited design projects. The device supports up to 60V voltage VDSS and can carry a continuous current ID of 30A, demonstrating excellent power processing capabilities. In addition, its excellent conduction resistance RD (on) is as low as 24mR, significantly optimizing energy efficiency and reducing energy loss. This MOSFET is suitable for various applications such as power management, motor drive, battery protection, etc. It is an ideal choice for engineers pursuing efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[SQ7414AEN-T1_GE3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sq7414aen-t1_ge3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:32:18</pubDate>
	<description><![CDATA[The MOSFET with model SQ7414AEN-T1_GE3 is a high-performance N-channel semiconductor device designed for the miniaturization needs of modern precision electronic equipment in a compact DFN3X3-8L package. This device has excellent electrical characteristics, including a maximum rated voltage of 60V VDSS and a continuous current ID of up to 30A, which can maintain stable performance under harsh conditions. It is worth mentioning that its excellent conduction resistance RD (on) is only 24m R, which helps to significantly reduce power loss and improve system efficiency. It is widely used in various scenarios such as power conversion, load switch control, and motor drive, and is your ideal choice for achieving efficient solutions.]]></description>
</item>
<item>
	<title><![CDATA[SI7414DN-T1-E3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7414dn-t1-e3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:32:06</pubDate>
	<description><![CDATA[This MOS transistor model is SI7414DN-T1-E3, which adopts advanced N-channel technology and is packaged in a miniaturized DFN3X3-8L format, making it particularly suitable for high-density PCB layouts. Its key performance indicators are superior, with a rated voltage of 60V VDSS and a continuous current ID of up to 30A, ensuring stable operation in high-voltage and high current environments. Of particular concern is its conduction resistance RD (on) as low as 24m R, which significantly improves power efficiency and reduces losses. It is widely used in fields such as power management, load switching, and motor control, making it an ideal component choice for high-end electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[NVTFS4C25N(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvtfs4c25n-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:31:54</pubDate>
	<description><![CDATA[The NVTFS4C25N N-channel MOSFET adopts advanced DFN3X3-8L packaging, which is compact and particularly suitable for high-density circuit board layout. The device has a voltage withstand value of 30V (VDSS) and can withstand continuous drain currents of up to 60A, demonstrating excellent power processing capabilities. Especially outstanding is its conduction resistance (RD (on)) as low as 6m R, which significantly reduces energy loss and improves system efficiency. This MOSFET is widely used in switching power supplies, motor drive control, and any high current semiconductor solution that requires high efficiency and low impedance.]]></description>
</item>
<item>
	<title><![CDATA[NVTFS4C13N(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvtfs4c13n-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:31:41</pubDate>
	<description><![CDATA[The NVTFS4C13N N-channel MOSFET adopts a miniaturized DFN3X3-8L package, designed specifically for high integration circuits, with small size but strong performance. This device has a voltage rating of 30V (VDSS) and can withstand a continuous drain current of 60A under high power conditions, demonstrating excellent current carrying capacity. Its conduction resistance is as low as 6m R (RD (on)), which helps to reduce system losses and improve overall energy efficiency. This MOSFET is suitable for various high current and high efficiency applications such as power conversion, motor drive, and high-power switching circuits.]]></description>
</item>
<item>
	<title><![CDATA[NTTFS4C25N(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nttfs4c25n-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:31:29</pubDate>
	<description><![CDATA[The NTTFS4C25N N-channel MOSFET adopts a compact DFN3X3-8L packaging design, providing an ideal solution for miniaturization of modern electronic products. This device has a rated voltage of 30V (VDSS) and can stably output a drain current of 60A under high loads, fully demonstrating its excellent power processing ability. It is worth mentioning that its conduction resistance is only 6m R (RD (on)), effectively reducing energy loss and improving overall energy efficiency. This MOSFET is widely used in switch mode power supplies, motor drives, and electronic applications that require high current processing capability and low impedance performance.]]></description>
</item>
<item>
	<title><![CDATA[SM32314D1RL(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm32314d1rl-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:31:17</pubDate>
	<description><![CDATA[SM32314D1RL N-channel MOSFET adopts advanced DFN3X3-8L packaging technology, with a compact structure and saves circuit board space. This device has a maximum withstand voltage of 30V (VDSS) and provides a continuous drain current (ID) of up to 60A, with strong and stable performance. Of particular note is its excellent conduction resistance of only 6m R (RD (on)), which effectively reduces energy consumption and improves the power conversion efficiency of the system. This MOSFET is very suitable for applications in high power density switching power supplies, motor drive control, and high current management solutions.]]></description>
</item>
<item>
	<title><![CDATA[CSD17579Q3A(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/csd17579q3a-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:31:05</pubDate>
	<description><![CDATA[CSD17579Q3A N-channel MOSFET, designed for efficient space utilization in a compact DFN3X3-8L package. This device has a maximum rated voltage of 30V (VDSS) and can withstand a strong 60A continuous drain current, demonstrating excellent performance. Especially outstanding is its ultra-low conduction resistance of 6m R (RD (on)), which significantly reduces power loss and improves overall work efficiency. This MOSFET is suitable for various high-performance switching power supplies, motor drives, and high current control scenarios, making it an ideal choice for engineers.]]></description>
</item>
<item>
	<title><![CDATA[CSD16411Q3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/csd16411q3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:30:52</pubDate>
	<description><![CDATA[CSD16411Q3 N-channel MOSFET, using advanced DFN3X3-8L packaging technology, is compact and lightweight, suitable for high-density circuit design. Equipped with a voltage withstand level of 30V (VDSS) and a continuous drain current (ID) of up to 60A, ensuring excellent power processing capabilities. Its conduction resistance is only 6m R (RD (on)), effectively reducing power consumption and improving system energy efficiency. This MOSFET is your ideal choice for applications such as high-frequency switching power supplies and motor drives.]]></description>
</item>
<item>
	<title><![CDATA[CSD17308Q3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/csd17308q3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:30:40</pubDate>
	<description><![CDATA[CSD17308Q3 N-channel MOSFET adopts a sophisticated DFN3X3-8L package, achieving excellent heat dissipation performance and compact design. The device has strong performance, with a rated drain source voltage (VDSS) of up to 30V and can withstand a continuous high current of 60A. The low on resistance (RD) of 6m R ensures efficient and low loss power conversion. Widely used in high current scenarios such as power conversion and motor drive, it is an ideal semiconductor component for improving system efficiency and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[CSD17578Q3A(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/csd17578q3a-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:30:28</pubDate>
	<description><![CDATA[The CSD17578Q3A N-channel MOSFET adopts advanced DFN3X3-8L packaging technology, achieving a perfect combination of miniaturization and efficient heat dissipation. This device has excellent performance, with a maximum drain source voltage (VDSS) of 30V, supporting continuous operating currents of up to 60A, and a conduction resistance (RD (on) as low as 6m R, ensuring excellent energy efficiency and low power consumption performance. Widely used in power conversion, battery management systems, motor drives, and other fields, it is an ideal semiconductor component for improving system performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[AON7400A(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon7400a-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:30:15</pubDate>
	<description><![CDATA[The AON7400A N-channel MOSFET adopts a compact DFN3X3-8L package, combining efficient heat dissipation and compact volume design. The device has strong performance with a rated drain source voltage (VDSS) of up to 30V, can stably carry 60A continuous current, and has a conduction resistance (RD (on) of only 6m R, ensuring excellent power transmission efficiency and low loss operation. Widely used in high current processing scenarios such as power conversion and load switching, it is an ideal semiconductor component choice for improving system performance and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[ZXMP3A13F(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zxmp3a13f-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:30:03</pubDate>
	<description><![CDATA[The ZXMP3A13F P-channel MOSFET adopts a compact SOT-23 package, specifically designed for high-performance circuit design. The device has a high voltage resistance of up to 30V, can provide stable 4.1A current output, and has an excellent 48m R conduction resistance, ensuring low power consumption and high efficiency of the system during operation. Widely used in power conversion, load switching, battery protection and other fields, it is an ideal choice for engineers to carry out green and energy-saving electronic design.]]></description>
</item>
<item>
	<title><![CDATA[ZXM61P03F(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zxm61p03f-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:29:51</pubDate>
	<description><![CDATA[ZXM61P03F MOSFET is a high-performance P-channel MOSFET, which adopts a compact SOT-23 packaging form, making it easy to achieve efficient layout in limited space. This device supports a maximum operating voltage of 30V, can stably output a continuous current of 4.1A, and has an excellent on resistance value of 48mR, effectively improving energy conversion efficiency and reducing system power consumption. Widely used in various fields such as power converters, load switches, battery management systems, etc., it is your ideal choice for pursuing excellent performance and energy-saving design.]]></description>
</item>
<item>
	<title><![CDATA[ST2303SRG(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/st2303srg-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:29:39</pubDate>
	<description><![CDATA[The ST2303SRG MOSFET is a professional P-channel MOSFET that uses a compact and durable SOT-23 package, making it particularly suitable for modern precision electronic devices. The device operates at a voltage of up to 30V and provides powerful 4.1A continuous current processing capability. Its highlight lies in its ultra-low on resistance of 48m R, significantly improving energy efficiency and reducing power consumption. Widely used in power management, motor drives, load switches and other scenarios, it is an ideal component for designing efficient and energy-saving circuit solutions.]]></description>
</item>
<item>
	<title><![CDATA[Si2303CDS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2303cds-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:29:24</pubDate>
	<description><![CDATA[Si2303CDS-T1-GE3 is an efficient P-channel MOSFET that uses a compact SOT-23 package for flexible use in compact circuit designs. The highlight of the device lies in its maximum drain source voltage (VDSS) of 30V, which can stably carry 4.1A drain current (ID), and has a conduction resistance of 48m R (RD (on), ensuring efficient operation under low loss conditions. This MOSFET is widely used in various scenarios such as power management, load switching, and motor drive, making it an ideal choice for improving system performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[NTR4502P(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntr4502p-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:29:12</pubDate>
	<description><![CDATA[NTR4502P MOSFET is a P-channel semiconductor device that uses a miniaturized SOT-23 package, making it particularly suitable for compact circuit design. Its key parameters include a maximum operating voltage of 30V, a strong continuous current carrying capacity of 4.1A, and an ultra-low 48m R conducting resistance, effectively improving power efficiency and reducing energy loss. This product is widely used in power converters, load switches, and power management systems for various electronic devices, meeting your high-efficiency needs with excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[NDS356AP(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nds356ap-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:29:00</pubDate>
	<description><![CDATA[The NDS356AP MOSFET is a high-performance P-channel MOSFET designed for high-density circuits using a space saving SOT-23 package. The device operates stably at a rated voltage of 30V and can withstand a maximum continuous current of 4.1A. With its excellent 48m R conduction resistance, it effectively reduces system energy consumption and improves overall efficiency. Widely suitable for various applications such as power control, load switching, and battery management systems, it is an ideal choice for creating high-performance and low-power electronic products.]]></description>
</item>
<item>
	<title><![CDATA[NDS352AP(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nds352ap-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:28:48</pubDate>
	<description><![CDATA[The NDS352AP MOSFET is a high-quality P-channel MOSFET packaged in a compact and reliable SOT-23 package. Its core features include the ability to withstand voltages up to 30V, provide continuous current processing capabilities of up to 4.1A, and have an excellent on resistance of only 48m R, which helps to reduce power consumption and improve system efficiency. This device is particularly suitable for battery protection applications in power management, load switches, and various portable electronic devices, and is an ideal component for engineers to achieve efficient and stable design solutions.]]></description>
</item>
<item>
	<title><![CDATA[IRLML5103PBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml5103pbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:28:35</pubDate>
	<description><![CDATA[IRLML5103PBF is a P-channel MOSFET that uses a small SOT-23 package, making it particularly suitable for circuit designs with limited space. This device has a rated voltage of 30V VDSS, provides a continuous current ID of 4.1A, and its on resistance is only 48mR, ensuring high efficiency and low loss in medium power applications. Widely used in power switches, battery protection circuits, and various load drive systems, it is the preferred semiconductor component for electronic engineers to design high-performance solutions.]]></description>
</item>
<item>
	<title><![CDATA[FDN358P(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdn358p-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:28:23</pubDate>
	<description><![CDATA[FDN358P is a P-channel MOSFET designed for high efficiency and small-sized electronics in a compact SOT-23 package. This device has a high operating voltage of 30V VDSS, providing a stable 4.1A current ID, and a low on resistance of 48mR, ensuring excellent energy efficiency performance in medium to high power applications. Widely used in power switch control, battery protection, and various medium current load driving scenarios, it is the ideal choice for circuit designers to pursue efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[DMP3160L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp3160l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:28:11</pubDate>
	<description><![CDATA[DMP3160L is a P-channel MOSFET designed in a space saving SOT-23 package, suitable for various compact circuit designs. This device has a high voltage withstand value of 30V VDSS, can stably output 4.1A current, and has a conduction resistance as low as 48mR, ensuring excellent energy efficiency performance in medium to high power applications. Widely used in power switch control, battery management systems, and various load driving scenarios, it is the best choice for engineers seeking efficient and low loss design solutions.]]></description>
</item>
<item>
	<title><![CDATA[Si2307CDS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2307cds-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:27:58</pubDate>
	<description><![CDATA[Si2307CDS-T1-GE3 is a P-channel MOSFET designed for high-performance electronics in a compact SOT-23 package. The device operates at a voltage VDSS of up to 30V, can withstand a continuous current of 4.1A, and has a conduction resistance as low as 48mR, effectively improving system energy efficiency and reducing energy consumption. Suitable for power switch control, battery protection, and various medium current load driving applications, it is an ideal semiconductor component for engineers to design high integration and low-power solutions.]]></description>
</item>
<item>
	<title><![CDATA[Si2307CDS-T1-E3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2307cds-t1-e3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:27:46</pubDate>
	<description><![CDATA[Si2307CDS-T1-E3 is a high-performance P-channel MOSFET that uses a compact SOT-23 package to meet various compact electronic design requirements. This device has a high operating voltage of 30V VDSS, supports a continuous current ID of 4.1A, and has excellent 48mR conduction resistance, effectively improving system energy efficiency and reducing power consumption. Widely used in power management, battery protection circuits, and various load driving scenarios, it is your ideal choice for optimizing circuit design.]]></description>
</item>
<item>
	<title><![CDATA[DMP3125L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp3125l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:27:34</pubDate>
	<description><![CDATA[The DMP3125L P-channel MOSFET adopts a space saving SOT-23 package, with a high breakdown voltage of 30V VDSS and a strong continuous current ID of 4.1A, which can meet the needs of various medium to high power applications. Its 48mR conducting resistance is beneficial for optimizing system energy efficiency and reducing power consumption. This MOSFET is commonly used in power switch control, battery protection circuits, and medium current load driving scenarios, making it an ideal choice for achieving efficient and reliable current management in electronic design.]]></description>
</item>
<item>
	<title><![CDATA[DMG2307L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg2307l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:27:21</pubDate>
	<description><![CDATA[DMG2307L MOSFET is a high-performance P-channel MOSFET designed for efficient power management and load driving using a small SOT-23 package. This device has a high voltage withstand value of 30V VDSS and a strong current carrying capacity of 4.1A, combined with a low conductivity resistance of 48mR, effectively reducing power consumption and improving system energy efficiency. Widely used in battery protection, power switch control, and various medium current load driving scenarios, it is an ideal choice for engineers seeking cost-effective solutions in design.]]></description>
</item>
<item>
	<title><![CDATA[Si2307BDS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2307bds-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:27:09</pubDate>
	<description><![CDATA[Si2307BDS-T1-GE3 MOSFET is a high-performance P-channel MOSFET packaged in SOT-23, designed specifically for compact electronic design. This device has a high rated voltage VDSS of 30V and a continuous current ID of up to 4.1A, which can demonstrate stable performance in medium to high power applications. Its conduction resistance is as low as 48mR, effectively improving energy utilization efficiency. Widely used in power management, battery protection circuits, and various load driving scenarios, it is an ideal semiconductor component for achieving high energy efficiency system control.]]></description>
</item>
<item>
	<title><![CDATA[Si2307BDS-T1-E3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2307bds-t1-e3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:26:57</pubDate>
	<description><![CDATA[Si2307BDS-T1-E3 MOSFET is a P-channel MOSFET device that uses a compact and durable SOT-23 package, suitable for various miniaturization designs. It has a high working voltage VDSS of 30V and a high current processing capacity of 4.1A, ensuring stability in medium to high power applications. In addition, a 48mR conducting resistor enables efficient energy conversion and low-power operation. This product is widely used in power switches, battery protection circuits, and load drive systems, making it an ideal choice for engineers to design efficient and energy-saving circuits.]]></description>
</item>
<item>
	<title><![CDATA[FDN360P(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdn360p-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:26:44</pubDate>
	<description><![CDATA[FDN360P MOSFET is a high-quality P-channel semiconductor component packaged in the classic SOT-23 package, with a working voltage of up to 30V VDSS, ensuring stable operation in various power management scenarios. The device provides a strong current carrying capacity of 4.1A and has a low on resistance of 48mR, effectively improving system energy efficiency and reducing power consumption. Suitable for applications such as battery protection, power switch control, and medium current load driving, it is an ideal choice for circuit designers to achieve efficient and reliable control.]]></description>
</item>
<item>
	<title><![CDATA[SM3407SRL(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm3407srl-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:26:32</pubDate>
	<description><![CDATA[SM3407SRL MOSFET is a P-channel semiconductor device packaged in a compact SOT-23 package, with a high voltage withstand value of 30V VDSS and support for a continuous current ID of 4.1A, ensuring stable operation in various medium to high power applications. Its conduction resistance is only 48mR, effectively improving energy efficiency and reducing power consumption. This device is widely used in scenarios such as power switches, battery protection, and load driving, making it an ideal choice for engineers to design efficient power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[Si2343DS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2343ds-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:26:20</pubDate>
	<description><![CDATA[Si2343DS-T1-GE3 is a high-quality P-channel MOSFET designed for high integration and energy-saving electronic applications in a miniaturized SOT-23 package. This device has a maximum drain source voltage of 30V (VDSS), can stably carry a drain current of 4.1A (ID), and has a conduction resistance of 48m R (RD (on)), ensuring excellent energy conversion efficiency and low power consumption performance. Widely used in power management, load switching, battery protection and other scenarios, it is an ideal semiconductor component for achieving miniaturization and high-performance electronic solutions.]]></description>
</item>
<item>
	<title><![CDATA[Si2343DS-T1-E3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2343ds-t1-e3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:26:08</pubDate>
	<description><![CDATA[Si2343DS-T1-E3 is a high-performance P-channel MOSFET designed for high-performance and low-power circuits using a small SOT-23 package. This device supports a drain source voltage (VDSS) of up to 30V, can withstand a maximum continuous drain current (ID) of 4.1A, and has a conduction resistance of 48m R (RD (on), ensuring excellent energy efficiency and reliability. Widely used in power conversion, load switching, battery management systems and other fields, it is an ideal semiconductor component for building compact and energy-saving electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[DMG3406L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg3406l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:25:55</pubDate>
	<description><![CDATA[DMG3406L is a high-performance N-channel MOSFET, packaged in a compact SOT-23 package to meet various space limited design requirements. This device has a rated voltage of 30V VDSS and a maximum continuous current ID of up to 5.8A, demonstrating excellent current processing capabilities. Its conduction resistance RD (on) is 22m R, ensuring low power consumption during the switching process, thereby improving system energy efficiency. Suitable for various applications such as power conversion, load switching, and low-voltage motor drive, it is your ideal choice for efficient semiconductor components.]]></description>
</item>
<item>
	<title><![CDATA[ZXMN2A01F(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zxmn2a01f-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:25:43</pubDate>
	<description><![CDATA[ZXMN2A01F is an N-channel MOSFET that uses a small SOT-23 package and is suitable for various compact electronic device designs. This device has a maximum drain source voltage of 20V (VDSS), can provide a stable drain current of 2.3A (ID), and has a conduction resistance of 48m R (RD (on)), achieving good current control and low power consumption performance in a small volume. This MOSFET is commonly used in power management, load switching, motor drive and other applications, and is an indispensable high-performance semiconductor component in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[MGSF2N02EL(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/mgsf2n02el-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:25:31</pubDate>
	<description><![CDATA[MGSF2N02EL is an efficient N-channel MOSFET, designed in a space saving SOT-23 package, particularly suitable for compact circuit designs. This device has a stable 20V drain source voltage VDSS and a maximum continuous drain current of 2.3A, ensuring excellent current carrying capacity even in high voltage environments. Especially outstanding is its conduction resistance RD (on) as low as 48mR, which effectively reduces energy loss and improves system efficiency. It is widely used in switch mode power supplies, motor drives, and various electronic device designs that pursue high efficiency.]]></description>
</item>
<item>
	<title><![CDATA[ZXMN2B01F(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zxmn2b01f-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:25:18</pubDate>
	<description><![CDATA[ZXMN2B01F MOSFET is a high-performance N-channel device, packaged in a compact SOT-23 package, suitable for space limited design solutions. This component has excellent electrical performance, with a rated voltage VDSS of up to 20V and a maximum continuous drain current ID of 2.3A. It can operate stably in high voltage environments and provide strong current driving capabilities. Of particular note, its conduction resistance RD (on) is as low as 48mR, which helps to reduce power loss and improve overall circuit efficiency. It is widely used in switch mode power supplies, motor drives, and various high-efficiency electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[XP151A13A0MR(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/xp151a13a0mr-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:25:06</pubDate>
	<description><![CDATA[This XP151A13A0MR MOS transistor adopts advanced N-channel technology and is packaged in the form of SOT-23, which is compact and efficient. Its core parameters are outstanding, with a rated voltage of 20V VDSS and a continuous drain current ID of up to 2.3A, ensuring excellent power processing capabilities. Especially outstanding is that this device has an ultra-low conduction resistance RD (on) of only 48m R, which can significantly reduce power consumption and improve system energy efficiency. It is an ideal choice for designing high-efficiency power conversion, motor drive and other applications.]]></description>
</item>
<item>
	<title><![CDATA[MGSF1N02LT1(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/mgsf1n02lt1-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:24:54</pubDate>
	<description><![CDATA[The MGSF1N02LT1 model MOSFET adopts SOT-23 small package and integrates efficient N-channel technology, specifically developed to optimize circuit efficiency. This device supports a drain source voltage (VDSS) of up to 20V and can stably handle a continuous drain current (ID) of 2.3A, making it suitable for various small and medium power applications. Its low on resistance (RD (on) of 48mR significantly reduces power loss and improves the overall system performance. Widely used in power conversion, load switching, and switch control circuits of low-voltage electronic devices, it is your ideal choice for pursuing high energy efficiency and stability semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[DMG2302U(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg2302u-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:24:42</pubDate>
	<description><![CDATA[The DMG2302U model MOSFET adopts a compact SOT-23 package, which includes advanced N-channel technology and is carefully designed to improve circuit efficiency. The device has a drain source voltage of 20V (VDSS) and can withstand 2.3A continuous drain current (ID) under normal operating conditions, suitable for various small and medium power applications. Its low on resistance (RD (on) of 48mR effectively reduces power consumption and improves energy efficiency. Widely used in power conversion, load switch control, and switch circuits of various low-voltage electronic devices, it is an ideal semiconductor component for improving product performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[ZXMN2F34FH(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zxmn2f34fh-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:24:29</pubDate>
	<description><![CDATA[The ZXMN2F34FH model MOSFET adopts a small SOT-23 package with embedded high-efficiency N-channel technology, designed specifically to improve circuit performance. This device has a drain source voltage of 20V (VDSS) and can stably carry a continuous drain current (ID) of 2.3A, suitable for various small and medium power applications. Its unique 48mR low conduction resistance (RD (on)) effectively reduces power loss and enhances system efficiency. Widely used in power conversion, load switching control, and switch circuits of various low-voltage electronic devices, it is an ideal semiconductor component for improving product energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[Si2302DDS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2302dds-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:24:17</pubDate>
	<description><![CDATA[The Si2302DDS-T1-GE3 model MOSFET adopts a compact SOT-23 package, which includes cutting-edge N-channel technology and is designed specifically to optimize circuit performance. The device supports a drain source voltage of 20V (VDSS) and can stably handle continuous drain current (ID) of 2.3A, suitable for various small and medium power applications. Its conduction resistance is only 48mR (RD (on)), ensuring low power consumption and high efficiency operation. Widely used in power management, load switches, and switch control of low-voltage electronic equipment, it is an important semiconductor component for improving product energy efficiency and reliability.]]></description>
</item>
<item>
	<title><![CDATA[Si2302CDS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2302cds-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:24:05</pubDate>
	<description><![CDATA[The Si2302CDS-T1-GE3 model MOSFET adopts a miniature SOT-23 package with advanced N-channel technology built-in, specifically designed to optimize circuit efficiency. This device operates at a drain source voltage of 20V (VDSS) and can withstand a maximum continuous drain current (ID) of 2.3A, making it suitable for medium and small power applications. Especially outstanding is its low conduction resistance (RD (on) of 48mR, which effectively reduces power loss and improves system efficiency. Widely used in power conversion, load switch control, and switch circuits of low-voltage electronic devices, it is an ideal semiconductor component choice for improving product performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[Si2302ADS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2302ads-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:23:52</pubDate>
	<description><![CDATA[The Si2302ADS model MOSFET adopts a compact SOT-23 package, equipped with efficient N-channel technology, suitable for various precision electronic designs. This device has a drain source breakdown voltage of 20V (VDSS) and can stably withstand continuous drain current (ID) of up to 2.3A, demonstrating excellent performance in small and medium power applications. Its low on resistance (RD (on) of 48mR means lower energy loss and higher circuit efficiency. Widely used in power conversion, load switch control, and other low-voltage switching circuits, it is an ideal choice to improve system performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[Si2302CDS-T1-E3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2302cds-t1-e3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:23:40</pubDate>
	<description><![CDATA[The Si2302CDS-T1-E3 model MOSFET adopts a compact SOT-23 package, which includes high-performance N-channel technology and is designed specifically for high-efficiency circuits. The device has a drain source voltage of 20V (VDSS) and can withstand continuous drain current (ID) of up to 2.3A, making it suitable for various small and medium power applications. Its conduction resistance is only 48mR (RD (on)), ensuring lower power loss and higher system efficiency. Widely used in power management, load switching, and low-voltage switching circuits, it is an ideal semiconductor component for improving the performance of your electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[Si2300DS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2300ds-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:23:28</pubDate>
	<description><![CDATA[Si2300DS-T1-GE3 is an N-channel MOSFET designed for compact circuits using a sophisticated SOT-23 package. The device supports a maximum drain source voltage (VDSS) of 20V and can stably handle a continuous drain current (ID) of 6A, demonstrating excellent current carrying capacity. Its conduction resistance (RD (on)) is only 22m R, effectively reducing power loss and improving energy efficiency performance. Widely used in power conversion, motor drive, load switching and other fields, it is your ideal choice for pursuing high integration and low-power semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[ST3401M23RG(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/st3401m23rg-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:23:16</pubDate>
	<description><![CDATA[ST3401M23RG is a P-channel MOSFET designed specifically for compact electronics, using a space saving SOT-23-3L packaging. Its key performance indicators include a maximum drain source voltage VDSS of 30V, providing a continuous drain current ID of up to 4.2A, and a conduction resistance RD (on) as low as 45mR, ensuring high efficiency and low losses during the switching process. Widely used in power management, battery protection systems, load switch control, and other electronic devices that require low voltage and medium current switching functions.]]></description>
</item>
<item>
	<title><![CDATA[AO3481(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3481-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:23:03</pubDate>
	<description><![CDATA[AO3481 is a P-channel MOSFET that uses a compact SOT-23-3L package, suitable for space limited circuit layouts. The device has excellent characteristics, with a maximum drain source voltage of 30V (VDSS), capable of handling continuous drain current (ID) of up to 4.2A, and its conduction resistance (RD (on)) is only 45mR, ensuring high efficiency and low power consumption during the switching process. Widely used in power management, load switch circuits, battery protection systems, and low voltage, medium current control of various portable and handheld devices.]]></description>
</item>
<item>
	<title><![CDATA[AO3401A(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3401a-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:22:50</pubDate>
	<description><![CDATA[AO3401A is a P-channel MOSFET that uses a small SOT-23-3L package, suitable for circuit designs with limited space. The device has powerful parameters, with a maximum drain source voltage VDSS of 30V, capable of carrying a continuous drain current ID of up to 4.2A, and has a conduction resistance RD (on) of 45mR. It performs well in switching applications, and the low conduction resistance ensures high efficiency and low power consumption. Widely used in power management, load switching, battery protection, and low-voltage, medium current switch control of various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[DMP3130L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp3130l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:22:37</pubDate>
	<description><![CDATA[DMP3130L MOSFET is a high-performance P-channel semiconductor device packaged in a small SOT-23 package, with a high voltage withstand value of 30V VDSS, ensuring stable operation in various application environments. The device supports 4.2A continuous current ID, with a conductivity resistance as low as 45mR, effectively improving energy efficiency and reducing power loss. Suitable for battery protection, power switch control, and medium current load driving, it is an ideal choice for circuit design, helping you achieve efficient and reliable system functions.]]></description>
</item>
<item>
	<title><![CDATA[DMP3068L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp3068l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:22:25</pubDate>
	<description><![CDATA[DMP3068L MOSFET is a P-channel semiconductor component that uses a space saving SOT-23 packaging form. The device has a rated voltage VDSS of up to 30V and can withstand a continuous current ID of 4.2A, meeting medium to high power requirements. Its conduction resistance is 45mR, ensuring good energy efficiency in high current applications. Suitable for multiple fields such as power switch control, battery management systems, and load drives, it is an ideal MOSFET solution for designers to achieve efficient power management and circuit control.]]></description>
</item>
<item>
	<title><![CDATA[NTR4171P(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntr4171p-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:22:13</pubDate>
	<description><![CDATA[NTR4171P MOSFET is an efficient P-channel semiconductor device that uses a small SOT-23 packaging to save circuit board space. Its working voltage can reach up to 30V and can stably provide a current ID of 4.2A in the system. It is worth mentioning that the device has a conduction resistance of 45mR, ensuring low losses and high energy efficiency during transmission. Widely used in various application scenarios that require precise control of current flow, such as power management, battery protection, and load switching, it is the ideal choice for your design project.]]></description>
</item>
<item>
	<title><![CDATA[MMBF2201NT1(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/mmbf2201nt1-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:22:00</pubDate>
	<description><![CDATA[MMBF2201NT1 N-channel MOSFET adopts a compact and precise SOT-323 package to achieve maximum space utilization. This device has a maximum drain source voltage (VDSS) of 20V and can carry a drain current (ID) of 2A in a conductive state, while maintaining an excellent low on resistance of 49mR (RD (on), effectively improving system efficiency and reducing energy loss. This MOSFET is widely used in scenarios such as switching power supply conversion, motor drives, and consumer electronics, making it an ideal choice for engineers to create high-performance, low-energy circuits.]]></description>
</item>
<item>
	<title><![CDATA[NTTFS4929N(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nttfs4929n-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:21:48</pubDate>
	<description><![CDATA[The NTTFS4929N N-channel MOSFET adopts a miniaturized DFN3X3-8L package, which is particularly suitable for the needs of modern compact electronic devices. This device has a breakdown voltage of 30V (VDSS) and can withstand continuous drain currents of up to 50A, demonstrating strong current processing capabilities. Its excellent conduction resistance is only 7.5m R (RD (on)), greatly reducing conduction loss and improving energy conversion efficiency. This MOSFET is widely used in high-end switching power supplies, motor drives, and high-speed signal switching, making it an ideal solution for high demand circuit design.]]></description>
</item>
<item>
	<title><![CDATA[NTTFS4985NF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nttfs4985nf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:21:36</pubDate>
	<description><![CDATA[The NTTFS4985NF model N-channel MOSFET adopts advanced DFN5X6-8L packaging technology, achieving a perfect combination of miniaturization and efficient heat dissipation, especially suitable for high-density circuit board design. The rated voltage VDSS of the device is 30V, providing a continuous current ID processing capability of up to 150A, demonstrating excellent power conversion performance. Its 2mR ultra-low conduction resistance helps significantly improve system energy efficiency and reduce power loss.]]></description>
</item>
<item>
	<title><![CDATA[NTMFS4C55N(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntmfs4c55n-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:21:24</pubDate>
	<description><![CDATA[The NTMFS4C55N model N-channel MOSFET adopts a compact DFN5X6-8L packaging design, with excellent heat dissipation performance and miniaturization characteristics, specifically designed for modern high-density electronic devices. The rated voltage VDSS of the device is 30V and can withstand continuous current ID up to 150A, demonstrating strong power processing capabilities. Its ultra-low conduction resistance of 2mR significantly improves system energy efficiency and reduces power loss.]]></description>
</item>
<item>
	<title><![CDATA[NTMFS4C05N(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntmfs4c05n-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:21:10</pubDate>
	<description><![CDATA[The NTMFS4C05N model N-channel MOSFET adopts a miniaturized DFN5X6-8L package, which has excellent heat dissipation performance and is suitable for high integration circuit design. The rated voltage VDSS of the device is 30V, providing a continuous current ID processing capability of up to 150A, demonstrating excellent power transmission efficiency. Its unique 2mR ultra-low conduction resistance effectively improves system energy efficiency and reduces losses.]]></description>
</item>
<item>
	<title><![CDATA[NTMFS4935N(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntmfs4935n-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:20:58</pubDate>
	<description><![CDATA[The NTMFS4935N model N-channel MOSFET adopts DFN5X6-8L packaging, which has a compact size and efficient heat dissipation performance, especially suitable for high-density electronic device design. The device supports 30V rated voltage VDSS and provides up to 150A continuous current ID processing capability, demonstrating powerful power control performance. Its 2mR ultra-low conduction resistance effectively improves system energy efficiency and reduces power loss.]]></description>
</item>
<item>
	<title><![CDATA[AON6354(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon6354-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:20:46</pubDate>
	<description><![CDATA[AON6354 model N-channel MOSFET adopts compact DFN5X6-8L packaging technology, which integrates miniaturization and efficient heat dissipation, making it particularly suitable for high integration circuit design. This device provides a 30V rated voltage VDSS and has a processing capability of up to 150A continuous current ID, demonstrating excellent power transmission performance. Its 2mR ultra-low conduction resistance significantly improves system energy efficiency and reduces power consumption.]]></description>
</item>
<item>
	<title><![CDATA[RTR025P02FRA(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/rtr025p02fra-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:20:33</pubDate>
	<description><![CDATA[RTR025P02FRA is a P-channel MOSFET, packaged in a miniature SOT-23-3L package, suitable for space limited and high integration circuit designs. The device features include a maximum drain source voltage (VDSS) of 20V, stable supply of 4.1A drain current (ID), and a conduction resistance (RD (on) as low as 34mR, ensuring high efficiency and low power consumption even in low voltage application environments. This MOSFET is widely used in power conversion, load switch control, and low-voltage electronic devices, and is an ideal semiconductor component for optimizing system performance.]]></description>
</item>
<item>
	<title><![CDATA[AO3423(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3423-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:20:21</pubDate>
	<description><![CDATA[AO3423 P-channel MOSFET is designed with a compact SOT-23-3L package, specifically for high-efficiency and low-power circuits. This device has excellent electrical parameters, with a maximum operating voltage VDSS of up to 20V, and can withstand continuous current ID4.1A. Its excellent on resistance is only 34mR, effectively reducing power loss and improving system efficiency. Widely used in power management, load switching, motor drives and other fields, AO3423 has become an ideal component choice for circuit designers due to its excellent performance and high reliability.]]></description>
</item>
<item>
	<title><![CDATA[AO3419(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3419-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:20:09</pubDate>
	<description><![CDATA[AO3419 P-channel MOSFET adopts a compact SOT-23-3L package, suitable for high integration circuit design. This device has excellent electrical performance, with a maximum operating voltage VDSS of 20V, a continuous current ID of 4.1A, and an extremely low conduction resistance RD (on) of only 34mR, greatly improving system energy efficiency and reducing power consumption. Widely used in power switch control, battery protection, load driving, and other aspects, with its excellent stability and high efficiency, it becomes the ideal component choice for your electronic design engineering.]]></description>
</item>
<item>
	<title><![CDATA[FDN306P(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdn306p-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:19:57</pubDate>
	<description><![CDATA[The FDN306P P-channel MOSFET adopts a miniaturized SOT-23-3L package, designed specifically for high efficiency and low impedance circuits. The highlight of the device lies in its powerful electrical specifications, with a maximum operating voltage VDSS of 20V, a continuous current carrying capacity of up to 4.1A, and an ultra-low conduction resistance RD (on) of only 34mR, achieving excellent energy conversion efficiency and fast response speed. Widely suitable for power conversion, motor drive, load switching and other application environments, FDN306P has become an ideal choice for many electronic design engineers due to its excellent performance and stable quality.]]></description>
</item>
<item>
	<title><![CDATA[IRLML6344PBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml6344pbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:19:44</pubDate>
	<description><![CDATA[IRLML6344PBF is an N-channel MOSFET designed for high efficiency and low power circuits using a miniaturized lead-free SOT-23 package. The device has a rated drain source voltage of 30V (VDSS), can withstand a maximum drain current of 5.8A (ID), and is equipped with excellent conduction performance, with a conduction resistance of only 28mR (RD (on)). Widely used in switch mode power supply conversion, motor drive, and various high-power electronic devices, this MOSFET has become one of the ideal components for circuit design due to its excellent current processing ability and energy efficiency performance.]]></description>
</item>
<item>
	<title><![CDATA[DMN3042L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn3042l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:19:32</pubDate>
	<description><![CDATA[DMN3042L is a high-performance N-channel MOSFET, packaged in a compact SOT-23 package, providing an ideal solution for high power density designs. The device has a drain source voltage withstand value (VDSS) of 30V and can withstand a drain current (ID) of up to 5.8A under normal operating conditions. Additionally, thanks to its low on resistance (RD (on) of up to 28mR, it achieves excellent energy efficiency performance. This MOSFET is widely used in switch mode power supplies, motor drives, and other high current, high-efficiency electronic systems, making it an ideal choice for improving system performance and energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[SM3400SRL(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm3400srl-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:19:20</pubDate>
	<description><![CDATA[The SM3400SRL N-channel MOSFET adopts SOT-23 micro packaging, designed specifically for compact and high-performance circuits. This device has a high breakdown voltage of 30V (VDSS), can withstand a continuous drain current (ID) of up to 5.8A, and has excellent conductivity with a resistance of only 28mR (RD (on)). With these characteristics, SM3400SRL is suitable for switching power supply conversion, high current motor drive, and other high-power applications, aiming to improve system efficiency and reduce energy consumption, making it the ideal choice for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[DMG3418L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg3418l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:19:08</pubDate>
	<description><![CDATA[DMG3418L N-channel MOSFET adopts compact SOT-23 packaging technology, providing a high power density solution for modern circuit design. This device has a high rated drain source voltage (VDSS) of 30V and can easily handle a drain current (ID) of up to 5.8A in a conducting state, while exhibiting a commendable low on resistance of only 28mR (RD (on)), ensuring excellent energy efficiency performance. DMG3418L MOSFETs are widely used in switch mode power supplies, high-speed motor drives, and many high-performance electronic systems, making them a powerful and energy-saving assistant for building powerful circuit systems.]]></description>
</item>
<item>
	<title><![CDATA[DMN2046U(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn2046u-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:18:55</pubDate>
	<description><![CDATA[The DMN2046U model MOSFET adopts a small SOT-23 package, which integrates efficient N-channel technology internally, specifically designed to optimize circuit performance. This device supports a drain source voltage (VDSS) of up to 20V and can stably provide a continuous drain current (ID) of 6A under full load conditions, suitable for small and medium power application scenarios. With a low on resistance (RD (on) of 14mR, it can effectively reduce energy consumption and improve system efficiency. Widely used in power conversion, load switch control, and switch circuit design for various low-voltage electronic devices, it is an ideal semiconductor device for improving product performance.]]></description>
</item>
<item>
	<title><![CDATA[SM3416SRL(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm3416srl-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:18:43</pubDate>
	<description><![CDATA[SM3416SRL is a high-performance N-channel MOSFET packaged in a compact SOT-23 format, suitable for high-density circuit board design. This device has a rated voltage of 20V VDSS and a powerful continuous current ID of 6A, demonstrating excellent power management performance. Especially outstanding is its ultra-low conduction resistance RD (on) of only 14m R, which helps to significantly reduce energy loss and improve overall system efficiency. It is an ideal choice for optimizing circuit design and achieving energy-saving applications.]]></description>
</item>
<item>
	<title><![CDATA[DMN2053U(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn2053u-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:18:31</pubDate>
	<description><![CDATA[DMN2053U is an efficient N-channel MOSFET designed for high power density and energy-saving electronic applications in a compact SOT-23 package. This device provides a maximum drain source voltage of 20V (VDSS), supports a continuous drain current of 6A (ID), and is equipped with an ultra-low 22m R on resistance (RD (on)), ensuring excellent energy conversion efficiency and low power consumption characteristics. Widely used in scenarios such as power conversion, load switching, and battery management systems, it is an ideal semiconductor component for miniaturized and high-performance electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[Si2312CDS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2312cds-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:18:18</pubDate>
	<description><![CDATA[Si2312CDS-T1-GE3 is a cost-effective N-channel MOSFET that uses a compact SOT-23 package, making it particularly suitable for electronic designs that are limited in space and require high efficiency. The device supports a maximum drain source voltage of 20V (VDSS) and can stably provide a drain current of 6A (ID), while having a conduction resistance as low as 22m R (RD (on)), ensuring excellent energy conversion efficiency and low power consumption. Widely used in scenarios such as power management, load switches, and motor drives, it is an ideal semiconductor component for miniaturized and energy-saving electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRLML6246PBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml6246pbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:18:06</pubDate>
	<description><![CDATA[IRLML6246PBF is a high-performance N-channel MOSFET designed for high integration and low power applications using a miniaturized SOT-23 package. This device provides a maximum drain source voltage (VDSS) of 20V and can withstand continuous drain current (ID) of up to 6A. It also has an excellent on resistance of 22m R (RD (on), ensuring excellent energy efficiency performance. Widely used in power conversion, load switching, battery management systems and other fields, it is an indispensable semiconductor component for achieving compact and efficient electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[DMN2058U(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn2058u-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:17:54</pubDate>
	<description><![CDATA[DMN2058U is a high-performance N-channel MOSFET designed for high-performance electronic devices in a compact SOT-23 package. This device provides a maximum drain source voltage (VDSS) of 20V, can stably handle drain current (ID) up to 6A, and has an excellent low on resistance of 22m R (RD (on)), ensuring excellent energy efficiency performance and low power consumption. Widely used in power management, battery protection, switch regulation and other scenarios, it is an ideal semiconductor component for achieving miniaturization and high efficiency circuit design.]]></description>
</item>
<item>
	<title><![CDATA[DMN2056U(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn2056u-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:17:42</pubDate>
	<description><![CDATA[DMN2056U is a high-performance N-channel MOSFET designed for high power density circuits using a compact SOT-23 package. The device has a maximum drain source voltage (VDSS) of 20V, can withstand continuous drain current (ID) of up to 6A, and has an excellent 22m R on resistance (RD (on)), ensuring lower power loss and higher energy efficiency. Widely used in power conversion, load switching, battery management systems and other fields, it is an ideal semiconductor component for achieving miniaturization and energy-saving electronic solutions.]]></description>
</item>
<item>
	<title><![CDATA[DMP3030SN(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp3030sn-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:17:29</pubDate>
	<description><![CDATA[DMP3030SN is a P-channel MOSFET that uses a small SOT-23 package, making it particularly suitable for compact circuit designs. The device has a rated voltage of 30V VDSS, providing a continuous current ID of up to 4.1A, and a conducting resistance of only 42mR, which helps to improve system energy efficiency and reduce power consumption. Widely used in power switches, battery protection circuits, and various medium current load driving scenarios, it is an ideal semiconductor component for optimizing circuit design and achieving efficient energy management.]]></description>
</item>
<item>
	<title><![CDATA[AOSS21319C(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aoss21319c-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:17:17</pubDate>
	<description><![CDATA[AOSS21319C is a P-channel MOSFET that uses a small SOT-23-3L package, suitable for circuit board designs with limited space. The device has outstanding parameters, with a maximum drain source voltage VDSS of 30V and can support a continuous drain current ID of 4.1A. Its conduction resistance RD (on) is only 42mR, effectively ensuring low power consumption and high efficiency in switching applications. Widely used in low voltage and medium current control scenarios for power management, load switch circuits, battery protection systems, and various portable electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[FDN308P(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdn308p-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:17:05</pubDate>
	<description><![CDATA[FDN308P is a P-channel MOSFET designed for high-density electronic circuits using a miniaturized SOT-23 package. Its core performance includes a maximum drain source voltage (VDSS) of 20V, stable output of 3A drain current (ID), and a low 60m R conduction resistance (RD (on), which performs well in low voltage and medium current applications. This MOSFET is suitable for power management, load switch control, logic level conversion and other functional scenarios, and is an ideal semiconductor component for optimizing system performance and reducing product size.]]></description>
</item>
<item>
	<title><![CDATA[KMA2D4P20SA(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/kma2d4p20sa-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:16:52</pubDate>
	<description><![CDATA[KMA2D4P20SA is a high-performance P-channel MOSFET that uses a compact SOT-23 package, making it particularly suitable for applications with limited space and high energy-saving requirements. This device has a maximum operating voltage of 20V VDSS, capable of carrying up to 3A continuous current, while providing excellent low on resistance RD (on) of only 60mR, ensuring low power consumption and high efficiency during high current operation. This MOSFET is widely used in various low voltage, small volume circuit designs such as battery powered devices, power converters, and load switches, making it an ideal choice for your streamlined and efficient solutions.]]></description>
</item>
<item>
	<title><![CDATA[FDV045P20L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdv045p20l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:16:40</pubDate>
	<description><![CDATA[FDV045P20L is a P-channel MOSFET that uses a compact SOT-23 package, suitable for high-density electronic circuit design. This device has a maximum operating voltage of 20V VDSS, can stably handle continuous currents up to 3A, and has a conduction resistance RD (on) as low as 60mR, ensuring low power consumption performance in efficient operation. This MOSFET, with its excellent electrical parameters and miniaturized packaging, is widely used in power conversion, battery protection, and DC-DC conversion of portable devices, making it an ideal choice for high integration design solutions.]]></description>
</item>
<item>
	<title><![CDATA[DMP2225L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp2225l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:16:28</pubDate>
	<description><![CDATA[DMP2225L is a P-channel MOSFET packaged in SOT-23, designed specifically for applications that require high efficiency and small size. The device operates at a voltage VDSS of up to 20V, capable of carrying a continuous current of 3A while maintaining a low conduction resistance RD (on) of 60mR, ensuring excellent energy efficiency even in high current operating conditions. This MOSFET is widely used in space demanding circuit designs such as battery protection, power management, and DC-DC converters due to its excellent electrical performance and compact packaging.]]></description>
</item>
<item>
	<title><![CDATA[DMP2215L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp2215l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:16:15</pubDate>
	<description><![CDATA[DMP2215L is a P-channel MOSFET designed in a space saving SOT-23 package, particularly suitable for compact power management and mobile device applications. The device features a maximum operating voltage VDSS of 20V, capable of supporting continuous currents up to 3A, and excellent conductivity, with a conductivity resistance as low as 60mR (RD (on)). This MOSFET, with its high energy efficiency conversion rate and compact packaging, is an ideal choice for battery protection circuits, DC/DC converters, and other small electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[Si2301BDS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2301bds-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:16:03</pubDate>
	<description><![CDATA[Si2301BDS is a small P-channel MOSFET packaged in SOT-23, designed specifically for precision power management and portable electronic devices. Its characteristic lies in the maximum working voltage VDSS of 20V, which can stably transmit continuous currents up to 3A, and the conduction resistance is only 60mR (RD (on)), achieving a perfect combination of high efficiency and low power consumption. This MOSFET, with its compact size and excellent electrical performance, is suitable for battery protection, DC/DC converters, and other limited space circuit applications.]]></description>
</item>
<item>
	<title><![CDATA[SI7415DN-T1-GE3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7415dn-t1-ge3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:15:51</pubDate>
	<description><![CDATA[SI7415DN-T1-GE3 is a P-channel MOSFET that uses advanced DFN3X3-8L packaging technology, standing out for its compact structure and excellent performance. It has a high rated leakage source voltage VDSS of 60V and can carry 20A continuous current ID, suitable for high-voltage application environments. Meanwhile, the conduction resistance RD (on) is only 55mR, effectively reducing power loss and improving overall energy efficiency. This MOSFET is widely used in power conversion, load switching, battery management systems, and other fields, and is an ideal component for pursuing efficient and energy-saving circuit design.]]></description>
</item>
<item>
	<title><![CDATA[NTR0202PL(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntr0202pl-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:15:39</pubDate>
	<description><![CDATA[NTR0202PL is a P-channel MOSFET that uses a small SOT-23 package, making it particularly suitable for compact electronic designs and low-power applications. This device has a drain source voltage of 20V (VDSS) and can withstand continuous drain current ID of up to 2.3A. It is suitable for various applications such as power switches and load drives. Its conduction resistance RD (on) is 130mR, demonstrating excellent energy efficiency performance. It is often used in various electronic devices, including power management and battery protection circuits.]]></description>
</item>
<item>
	<title><![CDATA[AON1605(DFN1006-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon1605-dfn1006-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:15:26</pubDate>
	<description><![CDATA[AON1605 is a P-channel MOSFET designed in a compact DFN1006-3L package, suitable for space sensitive and low-power applications. The device provides a 20V drain source voltage VDSS and can handle a maximum continuous drain current ID of 0.8A, making it particularly suitable for power switches, load drives, and other applications. Its 350mR conduction resistance RD (on) exhibits good energy efficiency among similar devices and is widely used in power management and logic control functions for mobile devices, consumer electronics, and various portable devices.]]></description>
</item>
<item>
	<title><![CDATA[AO3442(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3442-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:15:14</pubDate>
	<description><![CDATA[AO3442 is an efficient N-channel MOSFET designed in a compact SOT-23-3L package, suitable for various space limited circuit designs. The device has a high voltage withstand VDSS of 100V and can withstand a continuous drain current ID of 2.2A, meeting various medium power application requirements. Its characteristic lies in its 230mR conduction resistance RD (on), which exhibits good energy efficiency ratio among similar products and is widely used in power conversion, load switching, motor control, and other electronic devices that require low conduction loss.]]></description>
</item>
<item>
	<title><![CDATA[IRLZ44NPBF(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlz44npbf-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:15:02</pubDate>
	<description><![CDATA[IRLZ44NPBF is a high-performance N-channel MOSFET designed for high-power applications using the classic and reliable TO-220 packaging. This device provides a high voltage withstand VDSS of 60V, capable of carrying continuous drain current IDs up to 60A, meeting the power transmission requirements in high current environments. Its unique advantage lies in the industry-leading 17mR low conduction resistance RD (on), which effectively reduces energy loss and improves system energy efficiency. It is suitable for various high-power and high-efficiency electronic devices such as switching power supplies, motor drives, and battery management systems.]]></description>
</item>
<item>
	<title><![CDATA[AOD66406(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod66406-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:14:50</pubDate>
	<description><![CDATA[The AOD66406 N-channel MOSFET adopts TO-252-2L packaging and has been optimized for high current and high efficiency applications. The device supports a drain source voltage of up to 40V, VDSS, and can stably carry 60A continuous drain current to meet high-intensity power conversion needs. Its core advantage lies in the industry-leading 7.7mR conduction resistor RD (on), which significantly reduces energy loss and improves system efficiency while ensuring strong current transmission.]]></description>
</item>
<item>
	<title><![CDATA[AOD4184A(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod4184a-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:14:37</pubDate>
	<description><![CDATA[AOD4184A is a high-performance N-channel MOSFET designed for high current and high efficiency applications, using the TO-252-2L package with excellent heat dissipation. This device has a high voltage withstand VDSS of 40V, which can easily cope with the high current challenge of 60A and meet stringent power requirements. Its most significant feature is the ultra-low conduction resistance RD (on) of only 7.7 mR, greatly reducing system losses.]]></description>
</item>
<item>
	<title><![CDATA[STD64N4F6AG(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/std64n4f6ag-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:14:25</pubDate>
	<description><![CDATA[STD64N4F6AG is a high-power N-channel MOSFET, packaged in TO-252-2L, suitable for high current and high efficiency application scenarios. It has a leakage source voltage VDSS of up to 40V and can withstand peak current of 60A, fully meeting the needs of large-scale power switching and load driving. Its excellence lies in its ultra-low conduction resistance RD (on) of 7.7mR, ensuring extremely low power loss even in high current operating conditions and achieving efficient operation.]]></description>
</item>
<item>
	<title><![CDATA[FDD8447L(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdd8447l-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:14:13</pubDate>
	<description><![CDATA[FDD8447L is a high-performance N-channel MOSFET, packaged in the TO-252-2L form with good heat dissipation, particularly suitable for high current application scenarios. This device has excellent withstand voltage characteristics, with a VDSS of up to 40V, and can safely handle continuous drain currents of up to 60A to meet high-intensity power transmission needs. The key advantage lies in its industry-leading conducting resistor RD (on), which is only 7.7mR, greatly reducing power loss and improving overall system efficiency.]]></description>
</item>
<item>
	<title><![CDATA[FDD8445(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdd8445-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:14:00</pubDate>
	<description><![CDATA[FDD8445 is a high-performance N-channel MOSFET, packaged in standard TO-252-2L, suitable for various high-power applications. The device highlights include a maximum drain source voltage (VDSS) of up to 40V, which can easily withstand a continuous drain current (ID) of 60A, and has an industry-leading 7.7m R on resistance (RD (on), ensuring extremely high energy efficiency in high current transmission.]]></description>
</item>
<item>
	<title><![CDATA[SM95N03AD1RL(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm95n03ad1rl-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:13:48</pubDate>
	<description><![CDATA[SM95N03AD1RL is an N-channel MOSFET designed for high-density and high-performance circuits, using a miniaturized DFN5X6-8L package. This device can operate stably under a voltage of 30V VDSS, providing a continuous current of up to 80A, ensuring strong and stable power transmission. Its unique advantage lies in its ultra-low conduction resistance RD (on) of 4.3mR, which effectively reduces power loss and improves overall energy efficiency. SM95N03AD1RL is suitable for power conversion, motor drive, and other semiconductor applications that require high efficiency and low consumption.]]></description>
</item>
<item>
	<title><![CDATA[SM4842PRL(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm4842prl-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:13:36</pubDate>
	<description><![CDATA[SM4842PRL is a high-performance N+N channel MOSFET designed for high current applications using SOP-8 packaging technology. This device has a maximum operating voltage of 30V VDSS and can withstand a continuous drain current of 8.5A, ensuring strong and stable current output; The low conduction resistance RD (on) design of 15m R effectively reduces system power consumption and achieves higher energy efficiency ratio. Widely used in power conversion, motor drive, battery management systems and other fields, it is the ideal MOSFET component for your pursuit of efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[SM4818PRL(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm4818prl-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:13:24</pubDate>
	<description><![CDATA[SM4818PRL is a high-performance N+N channel MOSFET designed for high current applications in a compact SOP-8 package. Its key features include a maximum working voltage of up to 30V VDSS, which can withstand a continuous drain current of 8.5A, ensuring strong power transmission; A 15m R ultra-low conduction resistance RD (on) effectively reduces system power consumption and improves overall energy efficiency. Widely used in fields such as power conversion, motor drive, battery management systems, etc., it is the ideal MOSFET device choice for achieving high integration and energy-saving goals.]]></description>
</item>
<item>
	<title><![CDATA[DMN2009USS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn2009uss-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:13:11</pubDate>
	<description><![CDATA[The DMN2009USS model MOSFET adopts a sophisticated SOP-8 package, which includes efficient N-channel technology and is designed specifically for high-power applications. This device has a drain source voltage (VDSS) of 20V, ensuring stable operation under a continuous drain current (ID) of 20A, demonstrating excellent current carrying capacity. Its conduction resistance (RD (on)) is as low as 6.3mR, greatly improving energy conversion efficiency and reducing heat loss. Widely used in power management, motor drive, high current switch control and other scenarios, it is the preferred semiconductor component for improving electronic device performance and energy-saving performance.]]></description>
</item>
<item>
	<title><![CDATA[FDS6570A(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds6570a-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:12:59</pubDate>
	<description><![CDATA[The FDS6570A MOSFET model adopts mainstream SOP-8 packaging and is equipped with high-speed N-channel technology, specifically designed for high-efficiency power conversion. This device has a drain source withstand voltage (VDSS) of 20V and can withstand continuous drain current (ID) of up to 20A, demonstrating excellent current processing capabilities. Especially noteworthy is its conduction resistance (RD (on)) as low as 6.3mR, which effectively improves system efficiency and reduces heat loss. This MOSFET is widely used in power management, fast switching circuits, high current load drives, and other scenarios. It is an ideal semiconductor component for optimizing circuit design and improving product performance.]]></description>
</item>
<item>
	<title><![CDATA[IRF9358PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf9358pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:12:47</pubDate>
	<description><![CDATA[The IRF9358PBF model MOSFET adopts industry standard SOP-8 packaging and is equipped with advanced P+P channel technology, tailored for high-power applications. The device has a drain source withstand voltage (VDSS) of 30V and can reliably handle continuous drain current (ID) of up to 11A, adapting to high-intensity current environments. Its core technological highlight is the ultra-low conduction resistance (RD (on) of only 14mR, which effectively improves power transmission efficiency and reduces system losses. This MOSFET is widely used in power conversion, motor drive, and various high current switch control systems, helping you achieve more efficient and energy-saving electronic design solutions.]]></description>
</item>
<item>
	<title><![CDATA[DMP3036SSD(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp3036ssd-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:12:35</pubDate>
	<description><![CDATA[DMP3036SSD is a P+P channel MOSFET designed for efficient power conversion and switching applications in a compact SOP-8 package. This device has a maximum drain source voltage (VDSS) of 30V, can handle continuous drain current (ID) of up to 11A, and provides outstanding 14m R on resistance (RD (on)), ensuring low loss and high energy efficiency under high current conditions. This MOSFET is widely used in power management, motor drives, battery management systems, and other fields, making it an ideal choice for achieving high power density and energy-saving design.]]></description>
</item>
<item>
	<title><![CDATA[IRF7328PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7328pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:12:22</pubDate>
	<description><![CDATA[The IRF7328PBF model MOSFET adopts the SOP-8 packaging form, with built-in high-performance P+P channel technology, designed specifically for high-power applications. The device has a drain source breakdown voltage of 30V (VDSS) and can stably withstand continuous drain current (ID) of up to 11A, meeting the requirements of high current scenarios. Its excellence lies in having a low on resistance (RD (on) of only 14mR, which significantly improves system energy efficiency while ensuring strong driving force. Widely used in power conversion, motor drive control, and other high current switching circuits, it is an ideal semiconductor component for improving product performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[FDS4935BZ(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds4935bz-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:12:10</pubDate>
	<description><![CDATA[The FDS4935BZ MOSFET model adopts SOP-8 packaging and integrates efficient P+P channel technology internally. This device has a rated drain source voltage (VDSS) of up to 30V and can withstand stable 11A continuous drain current (ID), making it particularly suitable for high current processing applications. It is worth mentioning that its excellent conduction resistance is as low as 14mR (RD (on)), which effectively reduces power loss while ensuring excellent performance. This MOSFET is widely used in power conversion, motor drive, and high-power switching circuit design, helping you build more efficient electronic product solutions.]]></description>
</item>
<item>
	<title><![CDATA[SI4835DDY-T1-GE3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4835ddy-t1-ge3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:11:58</pubDate>
	<description><![CDATA[The SI4835DDY-T1-GE3 model MOS transistor adopts SOP-8 packaging and integrates high-performance P-channel technology internally. This device has a maximum drain source voltage (VDSS) of 30V and supports continuous drain current (ID) of up to 11A to meet demanding high current demand scenarios. Its outstanding conduction resistance is only 13mR (RD (on)), which performs well among similar products in the industry, helping to improve system efficiency and reduce energy loss. Widely used in power management, motor drive, and high current switch controller design, it is your ideal choice for creating high-performance electronic products.]]></description>
</item>
<item>
	<title><![CDATA[AOSP21321(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aosp21321-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:11:45</pubDate>
	<description><![CDATA[AOSP21321 model MOSFET, packaged in SOP-8 format, with advanced P-channel technology built-in. The device has a drain source withstand voltage (VDSS) of up to 30V and can withstand strong 11A continuous drain current (ID), making it particularly suitable for high current applications. Its striking feature is its ultra-low conduction resistance (RD (on) of only 13mR, which effectively improves energy efficiency and reduces system heating. This MOSFET is widely used in fields such as power conversion, motor drive, and high current switch control, and is an ideal semiconductor component for engineers to optimize circuit design.]]></description>
</item>
<item>
	<title><![CDATA[SIS402DN-T1-GE3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sis402dn-t1-ge3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:11:33</pubDate>
	<description><![CDATA[SIS402DN-T1-GE3 MOSFET is a high-performance N-channel MOSFET that uses miniaturized DFN3X3-8L packaging technology. Its key features include a maximum leakage source voltage of 30V (VDSS) and powerful 100A continuous current ID processing capability, fully meeting the requirements of high-power applications. Especially outstanding is its excellent conduction resistance RD (on), as low as 4mR, aimed at minimizing conduction losses and improving overall system efficiency. It is particularly suitable for scenarios such as switching power supply conversion, motor drive control, battery management systems, etc. that have strict requirements for efficiency and heat dissipation. It is an ideal component for achieving high-performance circuit design.]]></description>
</item>
<item>
	<title><![CDATA[SIR468DP-T1-GE3(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sir468dp-t1-ge3-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:11:21</pubDate>
	<description><![CDATA[SIR468DP-T1-GE3 is a high-performance N-channel MOSFET designed for high efficiency and space sensitivity using a miniaturized DFN5X6-8L package. This device operates stably under a voltage of 30V VDSS and can provide a continuous current of up to 80A, fully meeting the requirements of high current applications. Its highlight lies in the ultra-low conduction resistance RD (on) of only 4.3mR, which effectively reduces energy loss and improves overall energy efficiency. Whether in power conversion, motor drive, or other high current load control scenarios, SIR468DP-T1-GE3 is an ideal semiconductor component solution.]]></description>
</item>
<item>
	<title><![CDATA[SI7615CDN-T1-GE3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7615cdn-t1-ge3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:11:09</pubDate>
	<description><![CDATA[SI7615CDN-T1-GE3 P-channel MOSFET adopts a compact DFN3X3-8L packaging design, aiming to optimize circuit layout and enhance heat dissipation performance. The device has a rated voltage of 20V VDSS and a continuous drain current ID of up to 48A, ensuring stable operation in high current environments. Its conduction resistance RD (on) is as low as 7.5m R, effectively reducing conduction loss and improving overall work efficiency, especially suitable for scenarios with high energy efficiency requirements such as power conversion and battery management systems. The SI7615CDN-T1-GE3 MOSFET, with its excellent current carrying capacity and low resistance characteristics, has become the preferred semiconductor component for modern high-performance electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SI7613DN-T1-GE3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7613dn-t1-ge3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:10:56</pubDate>
	<description><![CDATA[SI7613DN-T1-GE3 P-channel MOSFET adopts a miniaturized DFN3X3-8L packaging process to achieve higher integration and heat dissipation efficiency. The working voltage of the device is VDSS up to 20V, and the maximum continuous drain current ID is 48A, demonstrating excellent current transfer performance. Its highlight lies in its extremely low conduction resistance RD (on) of only 7.5m R, which helps to significantly reduce system losses and improve overall efficiency. This MOSFET is suitable for high current applications such as power management and battery protection. With its strong current carrying capacity and excellent energy efficiency performance, SI7613DN-T1-GE3 has become the ideal semiconductor component choice for modern electronic product design.]]></description>
</item>
<item>
	<title><![CDATA[RSD140P06(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/rsd140p06-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:10:44</pubDate>
	<description><![CDATA[RSD140P06 is a high-performance P-channel MOSFET designed for high current applications in a TO-252-2L package. The device has a leakage source voltage (VDSS) tolerance of 60V and can continuously handle drain current (ID) up to 20A. Its excellence lies in the fact that the conduction resistance RD (on) is only 55mR, effectively reducing power loss and improving system energy efficiency. Widely used in scenarios such as power conversion, battery management systems, inverters, and high-power motor drives, it is an ideal choice for high-power, low loss semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[DMP6180SK3Q(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp6180sk3q-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:10:32</pubDate>
	<description><![CDATA[DMP6180SK3Q is a high-performance P-channel MOSFET, packaged in TO-252-2L, suitable for high current applications. This device has a drain source withstand voltage (VDSS) of 60V and can support continuous drain current (ID) of up to 20A. Its outstanding feature is the ultra-low conduction resistance RD (on) of only 55mR, ensuring high efficiency and low power consumption performance under high current conditions. Widely used in various fields such as power conversion, battery management systems, inverters, and motor drives, it is an ideal choice for high-power applications.]]></description>
</item>
<item>
	<title><![CDATA[DMP6180SK3(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp6180sk3-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:10:19</pubDate>
	<description><![CDATA[DMP6180SK3 is a P-channel MOSFET designed for high-power applications in a TO-252-2L package. This device has a rated drain source voltage of 60V (VDSS) and can withstand continuous drain current (ID) of up to 20A. Thanks to its excellent conductivity, the on resistance is only 55mR, ensuring low power loss even under high current operating conditions. Widely used in high-power scenarios such as power conversion, battery management systems, inverters, and motor drives.]]></description>
</item>
<item>
	<title><![CDATA[VN10LFTA(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/vn10lfta-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:10:07</pubDate>
	<description><![CDATA[VN10LFTA is an N-channel MOSFET designed for high integration electronic devices, using a miniaturized SOT-23 package. The device supports a drain source voltage of 60V (VDSS) and can stably handle a continuous drain current of 0.3A (ID). Its core advantage lies in a conducting resistance of only 1000mR, ensuring low power consumption and high efficiency during operation. Widely used in various scenarios such as power conversion, load switch control, and motor drive, it is an ideal semiconductor component for optimizing circuit performance and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[RHK003N06(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/rhk003n06-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:09:55</pubDate>
	<description><![CDATA[RHK003N06 is an N-channel MOSFET designed for modern compact electronic devices in a small SOT-23-3L package. This device has a high breakdown voltage of 60V (VDSS), can safely handle a continuous drain current of 0.3A (ID), and has excellent conductivity. The conductivity resistance is only 1000mR, effectively reducing energy loss and improving system efficiency. Widely used in power conversion, load switch control, motor drive and other scenarios, it is an ideal semiconductor component for achieving efficient and energy-saving circuits.]]></description>
</item>
<item>
	<title><![CDATA[PMBF170(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/pmbf170-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:09:43</pubDate>
	<description><![CDATA[PMBF170 is an N-channel MOSFET that adopts the industry standard SOT-23 packaging, suitable for various compact circuit designs. The device can operate stably at a voltage of 60V, providing a continuous drain current (ID) of 0.3A, and with a low on resistance (RD) of 1000mR, ensuring efficient and low-power operation. Widely used in power conversion, load switching, motor drive and other fields, it is an ideal semiconductor component for optimizing system performance, energy conservation and consumption reduction.]]></description>
</item>
<item>
	<title><![CDATA[BSS7728N(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss7728n-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:09:30</pubDate>
	<description><![CDATA[BSS7728N is an N-channel MOSFET designed for compact electronic devices using a miniaturized package SOT-23-3L. The device has a high voltage withstand (VDSS) of 60V, can stably transmit a continuous drain current (ID) of 0.3A, and has excellent conductivity with a conductivity resistance of only 1000mR, ensuring low power consumption and high efficiency operation. Widely used in power conversion, load switch control, motor drive and other fields, it is an ideal semiconductor component for optimizing circuit performance.]]></description>
</item>
<item>
	<title><![CDATA[BSS159N(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss159n-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:09:18</pubDate>
	<description><![CDATA[BSS159N is an N-channel MOSFET designed for high-density circuits using a space saving SOT-23-3L package. This device has a rated drain source voltage of 60V (VDSS) and can handle a continuous drain current of 0.3A (ID). Its on resistance is only 1000mR, ensuring low power consumption and improved energy efficiency in the on state. Suitable for applications such as power conversion, load switching, and motor drive, it is an ideal choice for achieving high-performance and low-power semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[BS870(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bs870-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:09:06</pubDate>
	<description><![CDATA[BS870 is an N-channel MOSFET packaged in an economical and practical SOT-23 package, suitable for various compact electronic designs. This device provides a drain source voltage (VDSS) of up to 60V and can continuously carry a drain current (ID) of 0.3A. Its feature is a low on resistance (RD) of 1000mR, which effectively reduces energy consumption and improves system efficiency. Widely used in power conversion, motor drive, switch circuit and other fields, it is an ideal semiconductor component for achieving efficient and low-power applications.]]></description>
</item>
<item>
	<title><![CDATA[MMBF170-F(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/mmbf170-f-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:08:54</pubDate>
	<description><![CDATA[MMBF170-F is an N-channel MOSFET designed specifically for miniaturization in modern electronic products, using a compact SOT-23 package. The device has a high voltage withstand value of 60V (VDSS) and can safely handle a continuous drain current (ID) of 0.3A in the system. Its conduction resistance is only 1000mR, which helps to significantly reduce power consumption and improve overall system efficiency. Widely used in power conversion, motor drive, switch circuits and other fields, it is an ideal semiconductor component for achieving efficient and energy-saving electronic solutions.]]></description>
</item>
<item>
	<title><![CDATA[BSH111BKR(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsh111bkr-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:08:42</pubDate>
	<description><![CDATA[BSH111BKR is an N-channel MOSFET that uses a small SOT-23 package, making it particularly suitable for compact electronic designs. This device has a rated drain source voltage (VDSS) of 60V and can withstand a continuous drain current (ID) of 0.3A. Due to its excellent conductivity, the conduction resistance is as low as 1000mR, effectively reducing energy loss and improving system efficiency. Widely used in various circuits such as power conversion, switch control, and motor drive, it is an ideal semiconductor component for achieving low-power and high-performance design.]]></description>
</item>
<item>
	<title><![CDATA[ZVN4106F(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zvn4106f-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:08:29</pubDate>
	<description><![CDATA[ZVN4106F is an N-channel MOSFET designed specifically for high integration electronics, using a miniaturized SOT-23 package. This device has a high breakdown voltage of 60V (VDSS), supports a continuous drain current of 0.3A (ID), and has a conduction resistance (RD (on) as low as 1000mR, ensuring low power consumption and high performance in operating conditions. Widely used in power conversion, load switching circuits, and motor drives, it is a high-quality semiconductor component for achieving high reliability and energy-saving electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[TN2106K(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/tn2106k-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:08:17</pubDate>
	<description><![CDATA[TN2106K is an N-channel MOSFET that uses a small SOT-23 package, particularly suitable for circuit design needs with limited space. The device has a high voltage tolerance of 60V (VDSS) and can stably handle a continuous drain current (ID) of 0.3A. Its internal structure is optimized, with a conduction resistance as low as 1000mR, significantly reducing power consumption and improving work efficiency. TN2106K is widely used in power conversion, load switch control, and other efficient and low loss electronic systems, making it an ideal choice for optimizing circuit performance.]]></description>
</item>
<item>
	<title><![CDATA[2N7002K-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/2n7002k-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:08:05</pubDate>
	<description><![CDATA[2N7002K-T1-GE3 is a high-performance N-channel MOSFET that uses a small SOT-23 package, making it particularly suitable for compact electronic designs. It can operate stably at a voltage of 60V (VDSS) and support a maximum continuous drain current (ID) of 0.3A. The key advantage lies in its ultra-low conduction resistance RD (on) of only 1000mR, effectively reducing energy loss and improving system efficiency. Widely used in power conversion, load switching, and low voltage, low current logic level conversion, it is one of the ideal components for engineers.]]></description>
</item>
<item>
	<title><![CDATA[DMN67D8L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn67d8l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:07:53</pubDate>
	<description><![CDATA[DMN67D8L is a high-quality N-channel MOSFET designed in a space saving SOT-23 package, suitable for high-density circuit board design. This device provides a voltage tolerance of 60V (VDSS) and can withstand a continuous drain current of 0.3A (ID). It also has excellent conductivity efficiency, with a conductivity resistance as low as 1000mR, which helps reduce energy loss and optimize system efficiency. Widely used in power conversion, electronic load control, and other demanding switch circuits, it is your ideal choice for optimizing circuit design.]]></description>
</item>
<item>
	<title><![CDATA[DMN62D0U(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn62d0u-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:07:40</pubDate>
	<description><![CDATA[DMN62D0U is a high-performance N-channel MOSFET, packaged in a miniaturized SOT-23 package, suitable for space limited design projects. This device has a high rated voltage VDSS of 60V, a maximum continuous drain current ID of 0.3A, and excellent conductivity performance, with a conductivity resistance as low as 1000mR, effectively reducing power loss and improving system efficiency. Suitable for various application scenarios such as power conversion, load switching, and motor drive, it is the ideal choice for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[DMN601K(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn601k-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:07:28</pubDate>
	<description><![CDATA[This DMN601K N-channel MOSFET is designed in a compact SOT-23 package for high-performance, low-power applications. Its core parameters include a rated voltage VDSS of up to 60V, a continuous drain current ID of up to 0.3A, excellent conductivity, and a conductivity resistance of only 1000m R, ensuring stable operation and low thermal loss in various circuit environments. It is suitable for various scenarios such as power management and switching circuits.]]></description>
</item>
<item>
	<title><![CDATA[2N7002E-T1-E3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/2n7002e-t1-e3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:07:16</pubDate>
	<description><![CDATA[The 2N7002E-T1-E3 N-channel MOSFET adopts a compact SOT-23 package, which is particularly suitable for space limited design projects. This device supports a drain source voltage (VDSS) of up to 60V and can provide a continuous drain current (ID) of 0.3A, suitable for applications with low to medium current levels. Its conduction resistance RD (on) is 1000mR, although relatively high, it performs well in small current transmission or signal control. Widely used in power management, logic level conversion, low-power circuit control and other fields, it is an ideal choice for miniaturized electronic products.]]></description>
</item>
<item>
	<title><![CDATA[SI7123DN-T1-GE3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7123dn-t1-ge3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:07:03</pubDate>
	<description><![CDATA[SI7123DN-T1-GE3 P-channel MOSFET is a high-performance semiconductor device that uses advanced DFN3X3-8L packaging technology to achieve space savings and efficient heat dissipation. This device has a rated voltage of 20V VDSS and can provide a stable 48A drain current ID at full load. Especially outstanding is its industry-leading conducting resistor RD (on), which is only 7.5m R, greatly improving system energy efficiency and reducing unnecessary power consumption. The SI7123DN-T1-GE3 MOSFET is designed specifically for high current applications such as power switches, battery management systems, etc. It is an ideal choice for pursuing efficient and low loss solutions.]]></description>
</item>
<item>
	<title><![CDATA[SI4925BDY-T1-E3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4925bdy-t1-e3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:06:51</pubDate>
	<description><![CDATA[The SI4925BDY-T1-E3 MOSFET model adopts a compact SOP-8 package, which integrates efficient P+P channel technology internally. The device supports a drain source voltage of 30V (VDSS) and can stably handle continuous drain current (ID) of 11A, suitable for various medium to high current applications. Its highlight lies in the conduction resistance (RD (on) of only 14mR, which effectively improves energy utilization and reduces power consumption. This MOSFET is widely used in power conversion, motor drive control, and various high-efficiency switch circuit designs. It is an ideal semiconductor component for engineers to optimize circuit performance and achieve energy-saving goals.]]></description>
</item>
<item>
	<title><![CDATA[SI4410DYPBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4410dypbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:06:39</pubDate>
	<description><![CDATA[SI4410DYPBF is a high-performance N-channel MOSFET designed in a space saving SOP-8 package, particularly suitable for applications such as high-efficiency power conversion and motor drive. This device has a maximum operating voltage of 30V VDSS, can withstand continuous currents of up to 15A, and has an extremely low on resistance RD (on) - only 8mR, ensuring high energy efficiency and low power consumption even during high current operations. With its outstanding electrical performance and compact design, SI4410DYPBF has become the ideal choice for medium and low voltage switching circuits.]]></description>
</item>
<item>
	<title><![CDATA[Si2301DS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2301ds-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:06:26</pubDate>
	<description><![CDATA[The P-channel MOSFET of model Si2301DS adopts a small SOT-23 package, which is particularly suitable for electronic design projects with strict space requirements. This device has excellent electrical performance, with a maximum operating voltage VDSS of 20V and a continuous current ID of up to 2.3A, suitable for medium to low voltage and high current applications. Its conduction resistance RD (on) is only 95mR, effectively reducing power loss and improving system efficiency. Widely used in power management, load switching, logic level conversion and other fields, it is an ideal component for engineers to design efficient and low-energy circuits.]]></description>
</item>
<item>
	<title><![CDATA[SI2301CDS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2301cds-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:06:14</pubDate>
	<description><![CDATA[SI2301CDS-T1-GE3 is a high-performance P-channel MOSFET designed for low power consumption and high integration using compact SOT-23 packaging technology. Its key features include a working voltage VDSS of up to 20V, capable of carrying 2.3A continuous drain current, and providing excellent power management capabilities. The conduction resistance RD (on) is only 95mR, effectively reducing energy consumption and improving system energy efficiency. The SI2301CDS-T1-GE3 MOSFET is widely used in diverse scenarios such as power switch control, battery protection, and portable electronic devices due to its excellent switching performance, compact packaging size, and high stability. It is an ideal semiconductor component for optimizing circuit design.]]></description>
</item>
<item>
	<title><![CDATA[Si2301ADS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2301ads-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:06:01</pubDate>
	<description><![CDATA[The P-channel MOSFET of model Si2301ADS adopts a compact SOT-23 package, which is particularly suitable for miniaturized electronic product design. This device provides stable and reliable performance, with a working voltage VDSS of up to 20V and a continuous current ID of up to 2.3A, meeting the needs of medium to low voltage and high current application scenarios. The conduction resistance RD (on) is as low as 95mR, effectively reducing power loss and improving overall energy efficiency. Widely used in various circuit designs such as power conversion, load switching, logic level converters, etc., it is an ideal MOSFET choice for engineers to build efficient and energy-saving systems.]]></description>
</item>
<item>
	<title><![CDATA[SFT1443(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sft1443-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:05:49</pubDate>
	<description><![CDATA[SFT1443 N-channel MOSFET, packaged in TO-252-2L, designed specifically for medium current applications in 100V high-voltage systems. The device has a drain source voltage of 100V (VDSS) and a continuous drain current of 15A (ID), ensuring long-lasting and stable operation in high voltage environments. The conduction resistance RD (on) is 100mR, although not the lowest in the industry, it is sufficient to meet most medium power demands while providing good cost-effectiveness. Widely used in switch mode power supplies, motor drive control, battery management systems, etc., it is an ideal choice for semiconductor components.]]></description>
</item>
<item>
	<title><![CDATA[RFD14N05LSM(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/rfd14n05lsm-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:05:37</pubDate>
	<description><![CDATA[RFD14N05LSM is an N-channel MOSFET, packaged in TO-252-2L, with excellent heat dissipation performance and space utilization. At a maximum drain source voltage of 60V (VDSS), it can withstand continuous drain current (ID) of up to 20A, making it particularly suitable for high voltage and high current application scenarios. Its low conduction resistance of 27m R effectively improves system energy efficiency and reduces power loss. Widely used in power conversion, motor drive and other applications, it is an ideal semiconductor component for achieving high-performance and low-energy design.]]></description>
</item>
<item>
	<title><![CDATA[RFD12N06RLES(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/rfd12n06rles-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:05:24</pubDate>
	<description><![CDATA[RFD12N06RLES is a high-quality N-channel MOSFET, packaged in TO-252-2L, which not only has a compact size but also excellent heat dissipation performance. This device can continuously provide a drain current (ID) of up to 20A at a maximum drain source voltage (VDSS) of 60V, making it particularly suitable for high voltage and high current working environments. Its excellent conduction resistance RD (on) is as low as 27m R, which helps to improve system energy efficiency and reduce power loss. Suitable for various occasions such as power converters, motor controllers, etc., it is your high-quality choice for building efficient and stable electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[RD3P050SNTL1(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/rd3p050sntl1-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:05:12</pubDate>
	<description><![CDATA[RD3P050SNTL1 N-channel MOSFET, packaged in TO-252-2L, designed for medium current applications at 100V high voltage. This device provides a drain source voltage (VDSS) of up to 100V and a continuous drain current (ID) of 15A, performing excellently in high voltage environments. Although its conduction resistance RD (on) is 100mR, it can still ensure stable and effective power transmission at the appropriate current level. Widely applicable in fields such as switching power supplies, motor drive control, battery management systems, etc., it is a high-quality semiconductor component that combines performance and economic benefits.]]></description>
</item>
<item>
	<title><![CDATA[NX2301PVL(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nx2301pvl-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:04:59</pubDate>
	<description><![CDATA[NX2301PVL is a P-channel MOSFET designed for modern miniaturized electronic products in a compact SOT-23 package. This device has a maximum drain source voltage (VDSS) of 20V, can withstand a stable 2.3A drain current (ID), and is equipped with a low on resistance (RD (on) of 95m R, ensuring efficient performance in low voltage and medium current applications. This MOSFET is suitable for power management, load switch control, logic level conversion and other purposes, and is an important component of achieving high integration and energy-saving electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[NVTFS4C10N(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvtfs4c10n-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:04:47</pubDate>
	<description><![CDATA[NVTFS4C10N is a high-performance N-channel MOSFET packaged in DFN3X3-8L, designed specifically for high integration and compact space applications. This device supports a VDSS voltage of 30V and has a continuous drain current ID capability of up to 100A, ensuring stable operation under high current conditions. Its conduction resistance RD (on) is as low as 4m R, which helps to reduce system power consumption and improve power efficiency. NVTFS4C10N MOSFETs are widely used in high-power scenarios such as power conversion and motor drive, providing strong support for various electronic devices with excellent electrical performance.]]></description>
</item>
<item>
	<title><![CDATA[AUIRFR5305TR(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/auirfr5305tr-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:04:34</pubDate>
	<description><![CDATA[The AUIRFR5305TR P-channel MOSFET adopts the TO-252-2L packaging form, designed specifically for medium to high voltage and high current applications. This device provides a maximum drain source voltage (VDSS) of 60V and supports a continuous drain current (ID) of 30A, ensuring stable performance output under harsh conditions. The conduction resistance RD (on) is 48m R, which can meet the power conversion requirements while maintaining a good energy efficiency ratio. Suitable for power management, motor drive, battery protection and other fields, it is an ideal choice for seeking reliable, efficient, and economical solutions.]]></description>
</item>
<item>
	<title><![CDATA[SUD19P06-60-GE3(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sud19p06-60-ge3-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:04:22</pubDate>
	<description><![CDATA[SUD19P06-60-GE3 P-channel MOSFETs are packaged in TO-252-2L and are designed for medium to high voltage application markets. This device has a drain source breakdown voltage of 60V (VDSS) and can continuously provide a drain current of 30A (ID), ensuring stable operation in various power conversion and control scenarios. Its conduction resistance RD (on) is 48m R, which meets the needs of most conventional applications while balancing cost and efficiency. The scope of application includes power switches, motor drives, adapter designs, etc., making it an ideal choice for finding economical and practical solutions.]]></description>
</item>
<item>
	<title><![CDATA[SQD19P06-60L_GE3(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sqd19p06-60l_ge3-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:04:09</pubDate>
	<description><![CDATA[SQD19P06-60L_GE3 P-channel MOSFET, packaged in TO-252-2L, designed specifically for compact and high-efficiency power supplies. This device provides a peak drain source voltage (VDSS) of 60V and supports continuous drain current (ID) of up to 30A, ensuring stable operation in medium to high voltage environments. Its conduction resistance RD (on) is 48m R, which is not the lowest, but it balances performance and cost, making it suitable for applications in load switching, power conversion, low-voltage motor drive, and other fields. It is an ideal choice for seeking reliability and cost-effectiveness balance solutions.]]></description>
</item>
<item>
	<title><![CDATA[SFT1342(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sft1342-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:03:57</pubDate>
	<description><![CDATA[SFT1342 P-channel MOSFET, packaged in a compact TO-252-2L package, is suitable for various space sensitive applications that require efficient conversion. This device has a high drain source voltage (VDSS) of 60V and supports a continuous drain current (ID) of 30A, ensuring stable operation in high voltage environments. Its conduction resistance RD (on) is 48m R, which, although relatively high, can still meet some circuit designs with specific cost and size requirements. It is commonly used in power management, load switching, low-voltage motor drive and other occasions, providing a cost-effective MOSFET solution.]]></description>
</item>
<item>
	<title><![CDATA[SQD50P03-07(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sqd50p03-07-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:03:45</pubDate>
	<description><![CDATA[The SQD50P03-07 P-channel MOSFET adopts TO-252-2L packaging, designed specifically for efficient and low loss circuits. The device provides a maximum drain source voltage (VDSS) of 30V and can withstand continuous drain current (ID) of up to 80A, demonstrating its excellent current carrying capacity. Its conduction resistance RD (on) is as low as 5.5m R, greatly reducing power loss and improving overall system efficiency. Widely used in power conversion, motor drive, load switching and other fields, it is a high-quality and cost-effective P-channel MOSFET solution.]]></description>
</item>
<item>
	<title><![CDATA[SUD35N10-26P(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sud35n10-26p-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:03:32</pubDate>
	<description><![CDATA[SUD35N10-26P N-channel MOSFET, designed for efficient power conversion in a compact TO-252-2L package. This device has an excellent drain source withstand voltage (VDSS) of 100V and can stably withstand continuous drain current (ID) of up to 50A, fully demonstrating its excellent power processing performance. Its conduction resistance RD (on) is 18m R, which helps improve system energy efficiency with lower resistance loss. It is widely used in switch mode power supplies, battery management systems, motor drives, and other applications, making it an ideal choice for high voltage and high current applications.]]></description>
</item>
<item>
	<title><![CDATA[IRFR8314PBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr8314pbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:03:19</pubDate>
	<description><![CDATA[IRFR8314PBF N-channel MOSFET, packaged in TO-252-2L, designed specifically for high-performance power management and motor drive applications. The device can operate at a maximum drain source voltage (VDSS) of 30V and can handle continuous drain current (ID) of up to 150A, demonstrating strong current processing capabilities. Its key feature lies in its extremely low conduction resistance RD (on) of only 2m R, which will significantly reduce internal losses in the system, improve overall efficiency, and become an ideal semiconductor component choice in fields such as switching power supplies, inverters, and charging equipment.]]></description>
</item>
<item>
	<title><![CDATA[IPD90N03S4L-03(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ipd90n03s4l-03-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:03:07</pubDate>
	<description><![CDATA[IPD90N03S4L-03 is a high-power N-channel MOSFET, packaged in TO-252-2L, suitable for high current and high efficiency circuit design. The device features a maximum drain source voltage (VDSS) of 30V and can withstand continuous drain current (ID) of up to 150A. Particularly outstanding is its ultra-low on resistance (RD (on) of only 2mR, ensuring excellent energy efficiency in high current applications. This MOSFET is widely used in high-power fields such as power conversion, electric vehicle charging equipment, and solar inverters, making it an ideal choice for system efficiency optimization.]]></description>
</item>
<item>
	<title><![CDATA[DMN3009SK3(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn3009sk3-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:02:55</pubDate>
	<description><![CDATA[The DMN3009SK3 N-channel MOSFET adopts a compact TO-252-2L package, specifically designed for high power density and space limited design requirements. This device is equipped with a maximum drain source voltage of 30V (VDSS) and can withstand continuous drain current (ID) of up to 150A, fully demonstrating its excellent power processing capabilities. Especially outstanding is its industry-leading 2m R on resistance (RD (on)), which significantly reduces conduction loss and significantly improves system energy efficiency. It is an ideal semiconductor component that pursues ultimate performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[AOD508(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod508-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:02:42</pubDate>
	<description><![CDATA[The AOD508 N-channel MOSFET adopts an efficient packaging TO-252-2L, tailored for the miniaturization and high-performance requirements of modern electronic products. This device has a maximum drain source withstand voltage (VDSS) of 30V and can stably withstand continuous drain current (ID) of up to 150A, highlighting excellent current processing performance. Its core highlight lies in the ultra-low conduction resistance RD (on) of only 2m R, which effectively reduces energy loss and improves the overall system energy efficiency. Widely used in various fields such as switching power supplies, DC/DC converters, and motor drives, it is the best choice for pursuing efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[AOD210(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod210-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:02:30</pubDate>
	<description><![CDATA[AOD210 N-channel MOSFET, packaged in a small and efficient TO-252-2L, designed specifically for compact design and high-power applications. The device has a maximum drain source voltage of 30V (VDSS) and supports continuous drain current (ID) of up to 150A, demonstrating strong power processing capabilities. Of particular note is its industry-leading conduction resistance of only 2m R (RD (on)), which helps to significantly reduce internal resistance losses in the system and improve overall efficiency. Widely used in scenarios such as switching power supplies, high-frequency switching circuits, and electric tool drives, it is an ideal semiconductor component for achieving high efficiency and low power consumption.]]></description>
</item>
<item>
	<title><![CDATA[PSMN3R4-30BLE(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/psmn3r4-30ble-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:02:17</pubDate>
	<description><![CDATA[The PSMN3R4-30BLE N-channel MOSFET adopts advanced TO-252-2L packaging, aiming to optimize space utilization and improve heat dissipation performance. This device has a rated drain source voltage (VDSS) of 30V and a maximum continuous drain current (ID) of up to 120A, making it easy to handle high current application scenarios. Its unique advantage lies in its extremely low conduction resistance RD (on), which is only 3m R, ensuring reduced energy consumption and improved overall system efficiency during operation. Widely used in switch mode power supplies, motor drives, LED lighting and other fields, it is an ideal choice for efficient and low-power solutions.]]></description>
</item>
<item>
	<title><![CDATA[NTD4904N(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntd4904n-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:02:05</pubDate>
	<description><![CDATA[The NTD4904N N-channel MOSFET is packaged in high-quality TO-252-2L and designed specifically for high power density applications. This MOSFET has a maximum gate source voltage of 30V (VDSS) and can withstand up to 120A drain current (ID), ensuring strong and stable power transmission performance. Especially outstanding is its excellent conduction resistance, with a RD (on) of only 3m R, which effectively reduces power loss and significantly improves energy utilization. It is particularly suitable for switch mode power supplies, motor control, and various circuit systems that require high efficiency and energy conservation.]]></description>
</item>
<item>
	<title><![CDATA[NTD4804N(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntd4804n-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:01:53</pubDate>
	<description><![CDATA[NTD4804N MOSFET is a high-performance N-channel power device, packaged in a compact TO-252-2L, suitable for various circuit designs with limited space. This MOSFET has a maximum drain source voltage (VDSS) of 30V and provides a continuous drain current (ID) of up to 120A, ensuring excellent power processing capabilities. Its highlight lies in its ultra-low conduction resistance RD (on) of only 3m R, effectively reducing energy loss and improving system efficiency. It is widely used in switch mode power supplies, motor drives, and other power electronics fields.]]></description>
</item>
<item>
	<title><![CDATA[FDD8870(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdd8870-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:01:41</pubDate>
	<description><![CDATA[The MOSFET FDD8870 adopts advanced technology to create N-channel MOSFETs, with a packaging form of TO-252-2L, which has high efficiency and reliability. Its withstand voltage value is as high as VDSS30V, and the continuous drain current can reach ID120A, demonstrating strong current carrying capacity. More noteworthy is that this device has an excellent on resistance of only 3m R, greatly reducing power consumption and improving system efficiency. It is an ideal choice for various power conversion, motor drive and other applications.]]></description>
</item>
<item>
	<title><![CDATA[DMTH3004LK3(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmth3004lk3-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:01:28</pubDate>
	<description><![CDATA[DMTH3004LK3 is a high-power N-channel MOSFET designed in a TO-252-2L package for high-performance, high current applications. Its unique advantage lies in its working voltage VDSS of up to 30V, which can easily handle continuous currents of 120A. Particularly noteworthy is its ultra-low conduction resistance RD (on) of only 3mR, ensuring excellent energy efficiency and low heat loss under extreme load conditions.]]></description>
</item>
<item>
	<title><![CDATA[SUD50N03-10(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sud50n03-10-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:01:16</pubDate>
	<description><![CDATA[SUD50N03-10 is an efficient N-channel MOSFET, designed for handling high current applications in a TO-252-2L package. Its key feature is that the working voltage VDSS can reach up to 30V, can stably carry a continuous current of 60A, and has an excellent conduction resistance RD (on) of only 7mR, ensuring low power consumption and high efficiency even under high current operation.]]></description>
</item>
<item>
	<title><![CDATA[NTD4813NH(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntd4813nh-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:01:04</pubDate>
	<description><![CDATA[NTD4813NH is a high-power N-channel MOSFET developed in a TO-252-2L package specifically to meet the challenges of high current applications. Its core technical indicators include a working voltage VDSS of up to 30V, support for continuous current output of 60A, and a conduction resistance RD (on) as low as 7mR, ensuring high efficiency and low heat loss even during full load operation.]]></description>
</item>
<item>
	<title><![CDATA[FDD8782(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdd8782-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:00:52</pubDate>
	<description><![CDATA[FDD8782 is a high-performance N-channel MOSFET designed in a standard TO-252-2L package, specifically optimized for high current applications. The device has distinctive characteristics, with a working voltage of up to 30V VDSS, capable of carrying a continuous current of 60A, and a conduction resistance RD (on) of only 7mR, ensuring high efficiency and low heat loss during high current operation.]]></description>
</item>
<item>
	<title><![CDATA[FDD8780(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdd8780-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:00:39</pubDate>
	<description><![CDATA[FDD8780 is a high-power N-channel MOSFET designed in a TO-252-2L package specifically for high current application environments. Its key features include a working voltage VDSS of up to 30V, a continuous current carrying capacity of 60A, and a conducting resistance RD (on) of only 7mR, ensuring high efficiency and low loss even in high current operating mode.]]></description>
</item>
<item>
	<title><![CDATA[SM418T9RL(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm418t9rl-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:00:27</pubDate>
	<description><![CDATA[SM418T9RL is a high-performance N-channel MOSFET designed specifically for handling high current and high-power applications in a TO-252-2L package. The device has excellent electrical performance, with a working voltage VDSS of up to 30V, capable of withstanding a continuous current of 60A, and a conduction resistance RD (on) as low as 7mR, effectively reducing power consumption and heat loss, ensuring efficient operation even in high current conditions.]]></description>
</item>
<item>
	<title><![CDATA[NTD4809N(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntd4809n-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:00:15</pubDate>
	<description><![CDATA[NTD4809N is a high-power N-channel MOSFET designed in a TO-252-2L package specifically for high current applications. The highlights of the device include a working voltage VDSS of up to 30V, which can safely carry a continuous current of 60A. Particularly noteworthy is its ultra-low conduction resistance RD (on) of only 7mR, ensuring excellent energy efficiency and low heat loss even during high current operation. Widely used in power conversion, motor drive and other fields, it is an ideal semiconductor component for improving system performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[IRLR7821PBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlr7821pbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 08:00:03</pubDate>
	<description><![CDATA[IRLR7821PBF is a high-performance N-channel MOSFET designed for high-power, high current applications, using the classic TO-252-2L package. Its strength lies in its high working voltage VDSS of up to 30V, which can withstand continuous currents of up to 60A, while the conduction resistance RD (on) is only 7mR, which can maintain excellent energy efficiency and lower heat generation even under high current conditions.]]></description>
</item>
<item>
	<title><![CDATA[IRFR3707ZPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr3707zpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:59:50</pubDate>
	<description><![CDATA[IRFR3707ZPBF is a high-performance N-channel MOSFET designed for high-power, high current applications in a TO-252-2L package. This device has excellent electrical performance, with a working voltage VDSS of up to 30V, capable of carrying a continuous current of up to 60A, and has an extremely low on resistance RD (on) of only 7mR, ensuring high efficiency and low loss even under high current operation. Widely used in high-power fields such as power conversion and motor drive, it is an ideal semiconductor component for improving system energy efficiency and reliability.]]></description>
</item>
<item>
	<title><![CDATA[IPD30N03S2L-10(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ipd30n03s2l-10-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:59:39</pubDate>
	<description><![CDATA[IPD30N03S2L-10 is a high-performance N-channel MOSFET designed for high-power, high current applications in a TO-252-2L package. This device has outstanding electrical parameters, with a working voltage VDSS of up to 30V, a continuous current ID of up to 60A, and an extremely low conduction resistance RD (on) of only 7mR, ensuring high efficiency and low heat loss even in high current environments. Widely used in power conversion, motor drive and other applications, it is the best choice to improve system energy efficiency and enhance reliability.]]></description>
</item>
<item>
	<title><![CDATA[FDD8880(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdd8880-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:59:28</pubDate>
	<description><![CDATA[FDD8880 is an efficient N-channel MOSFET that uses standardized TO-252-2L packaging, focusing on meeting the needs of high current application scenarios. Its main characteristics are as follows: the working voltage VDSS can reach up to 30V, and it can stably carry a continuous current of 60A. Especially noteworthy is its excellent conduction resistance RD (on), which is only 7mR, allowing it to maintain low power consumption and high efficiency even under high current working conditions. This MOSFET is widely used in power adapters, power converters, and motor drives, making it an ideal choice for improving system performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[FDD6680AS(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdd6680as-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:59:16</pubDate>
	<description><![CDATA[FDD6680AS is a high-performance N-channel MOSFET designed for high current applications in a compact TO-252-2L package. The key characteristics of the device include a working voltage VDSS of up to 30V, the ability to withstand strong continuous currents of up to 60A, and its ultra-low conduction resistance RD (on) of only 7mR, ensuring high efficiency and low heat loss even under high current operation.]]></description>
</item>
<item>
	<title><![CDATA[BUK9214-30A(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/buk9214-30a-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:59:05</pubDate>
	<description><![CDATA[BUK9214-30A is a high-power N-channel MOSFET designed in a TO-252-2L package specifically to meet the needs of large-scale current applications. Its outstanding performance includes a working voltage VDSS of up to 30V, a maximum continuous current ID of up to 60A, and an impressive conduction resistance RD (on) as low as 7mR, effectively reducing system losses and improving overall efficiency. This MOSFET is widely used in power conversion, high-power motor drive and other fields, and is the preferred device for building high-performance and high reliability electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[DMG4468LK3(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg4468lk3-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:58:53</pubDate>
	<description><![CDATA[DMG4468LK3 is an efficient N-channel MOSFET designed for high power and low loss applications in a TO-252-2L package. The device has excellent electrical performance with a working voltage VDSS of up to 30V, supporting stable transmission of 50A high current, and its excellent conduction resistance RD (on) is only 7.5mR, ensuring high efficiency and low heat generation under high current operating conditions. This MOSFET is suitable for power conversion, motor drive and other fields, and is an ideal semiconductor component for optimizing system performance and improving energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[STN484D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/stn484d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:58:42</pubDate>
	<description><![CDATA[STN484D is a high-performance N-channel MOSFET designed specifically for handling high-power applications, using industry standard TO-252-2L packaging. This device has excellent electrical performance, with a working voltage VDSS of up to 30V and a peak current ID of 50A. It is particularly noteworthy that its ultra-low conduction resistance RD (on) is only 7.5mR, effectively reducing energy loss and improving system efficiency. This MOSFET is widely used in power conversion, motor drive, battery management systems, and various occasions that require high current and low impedance switching characteristics, making it an ideal choice to improve circuit performance.]]></description>
</item>
<item>
	<title><![CDATA[PHD71NQ03LT(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/phd71nq03lt-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:58:30</pubDate>
	<description><![CDATA[PHD71NQ03LT is a high-performance N-channel MOSFET designed for high current applications in an economical and efficient TO-252-2L package. Its main characteristics include a working voltage VDSS of up to 30V, strong current carrying capacity, and a maximum continuous current ID of up to 50A; And it has an extremely low conduction resistance RD (on) of only 7.5mR, ensuring high efficiency and low heat generation during high current operation. This MOSFET is suitable for power conversion, motor drive, energy storage systems, and various high-power switching applications, and is an ideal semiconductor component for improving system performance and reliability.]]></description>
</item>
<item>
	<title><![CDATA[NTD4302(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntd4302-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:58:19</pubDate>
	<description><![CDATA[NTD4302 is a high-performance N-channel MOSFET designed specifically for high-power processing, using the standard TO-252-2L packaging format. Its key features include a working voltage VDSS of up to 30V, the ability to withstand a maximum continuous current ID of 50A, and an extremely superior conduction resistance RD (on) of only 7.5mR, aiming to achieve lower power loss and higher system efficiency. This MOSFET is widely used in many fields such as power conversion, motor drive, power electronic devices, and battery management systems, making it an ideal choice to improve overall efficiency.]]></description>
</item>
<item>
	<title><![CDATA[DMN3016LK3(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn3016lk3-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:58:08</pubDate>
	<description><![CDATA[DMN3016LK3 is a high-performance N-channel MOSFET, packaged in TO-252-2L, suitable for high-power applications. The device has excellent electrical parameters, with a working voltage VDSS of up to 30V, and can withstand continuous current IDs of up to 50A. Particularly outstanding is its ultra-low conduction resistance RD (on) of only 7.5mR, ensuring high efficiency and low heat loss under high currents. Widely used in fields such as power conversion, motor drives, inverters, and battery management systems, it is an ideal semiconductor component for optimizing system energy efficiency and enhancing reliability.]]></description>
</item>
<item>
	<title><![CDATA[SI1012X-T1-GE3(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si1012x-t1-ge3-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:57:57</pubDate>
	<description><![CDATA[SI1012X-T1-GE3 is a high-performance N-channel MOSFET that utilizes advanced SOT-523 packaging technology. The device has strong and stable electrical performance, with a rated voltage VDSS of up to 20V, and can provide a maximum current ID of 0.8A continuously. At the same time, it has an excellent conduction resistance RD (on) as low as 100mR, ensuring efficient and low consumption operation. This MOSFET is widely used in various power conversion, load driving, portable devices, and intelligent hardware fields. With its excellent performance and compact packaging, it provides users with the best power management solution in the design process.]]></description>
</item>
<item>
	<title><![CDATA[RUE002N02(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/rue002n02-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:57:46</pubDate>
	<description><![CDATA[RUE002N02 is a high-efficiency N-channel MOSFET packaged in a sophisticated SOT-523 package, with excellent electrical parameters. Its working voltage VDSS is as high as 20V, continuous current ID is as high as 0.8A, and it also has an ultra-low conduction resistance RD (on) of only 100mR, ensuring the high efficiency and low loss performance of the device during operation. This MOSFET is very suitable for circuit design in various power conversion, battery protection, portable devices, and consumer electronics products, bringing stronger power management and higher energy efficiency to your products.]]></description>
</item>
<item>
	<title><![CDATA[FDY302NZ(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdy302nz-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:57:34</pubDate>
	<description><![CDATA[FDY302NZ is a high-quality N-channel MOSFET packaged in a compact SOT-523 package, designed specifically to improve system efficiency. This device has stable electrical performance, with a working voltage VDSS of up to 20V, and can support continuous current ID of up to 0.8A. It also exhibits excellent low resistance characteristics in a conductive state, with an RD (on) of only 100mR. This MOSFET is widely used in power management, motor drives, charging devices, and other scenarios. With its excellent performance and small-sized packaging, it helps your electronic products achieve higher energy efficiency and better space utilization.]]></description>
</item>
<item>
	<title><![CDATA[FDY301NZ(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdy301nz-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:57:23</pubDate>
	<description><![CDATA[FDY301NZ is a carefully crafted N-channel MOSFET that utilizes space saving SOT-523 packaging technology. The core advantage of this device lies in its excellent electrical performance indicators, including a working voltage VDSS of up to 20V, a continuous current carrying capacity ID of 0.8A, and a conducting resistance RD (on) of only 100mR, achieving low loss and high efficiency operation. Due to its excellent specifications and miniaturization design, FDY301NZ MOSFETs are particularly suitable for power conversion, battery management systems, and other electronic devices that require strict volume and efficiency to achieve efficient power control and switching functions.]]></description>
</item>
<item>
	<title><![CDATA[FDY300NZ(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdy300nz-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:57:11</pubDate>
	<description><![CDATA[FDY300NZ is a highly integrated N-channel MOSFET packaged in a compact SOT-523 package. It has excellent electrical characteristics, with a rated voltage of up to 20V VDSS, and can withstand a maximum continuous current of ID0.8A. At the same time, it has an extremely low conduction resistance RD (on) of only 100mR, effectively ensuring efficient operation and energy-saving effects. This MOSFET is widely used in various fields such as power conversion, load switching, and mobile communication devices. With its compact size and excellent performance, it has become an ideal choice for modern circuit design.]]></description>
</item>
<item>
	<title><![CDATA[DMN2004TK(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn2004tk-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:57:00</pubDate>
	<description><![CDATA[DMN2004TK is a high-quality N-channel MOSFET that uses sophisticated SOT-523 packaging technology. This device has excellent withstand voltage performance, with a VDSS of up to 20V, and provides strong current carrying capacity, with a maximum continuous current of ID0.8A. Its excellent conduction resistance is only 100m R, significantly reducing power consumption and improving conversion efficiency. This MOSFET is particularly suitable for electronic devices with limited space, such as chargers, power management modules, and consumer electronics, as an ideal switch component or load driver component.]]></description>
</item>
<item>
	<title><![CDATA[DMG6968UDM(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg6968udm-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:56:49</pubDate>
	<description><![CDATA[The DMG6968UDM N+N channel MOSFET adopts an economical and efficient SOT-23-6L package, suitable for modern high-density electronic design. This device supports a maximum operating voltage of 20V (VDSS) and can stably handle continuous drain current (ID) of up to 7A, demonstrating excellent current carrying capacity among similar products. Its outstanding conduction resistance is only 14mR (RD (on)), effectively reducing power loss and improving the overall energy efficiency of the system. Widely used in power management, motor drive, and various high current and low impedance requirements.]]></description>
</item>
<item>
	<title><![CDATA[IRLML2244PBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml2244pbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:56:38</pubDate>
	<description><![CDATA[The IRLML2244PBF P-channel MOSFET adopts a small SOT-23 package, providing an efficient and space saving solution for modern electronic devices. The device operates at a voltage of up to 20V (VDSS) and can stably transmit a drain current (ID) of 5A, demonstrating excellent performance among similar products. Its superior conduction resistance is only 35mR (RD (on)), ensuring low loss and high efficiency in high current applications. Widely used in power switching, battery management systems, and other circuit designs that require fast response and low conduction impedance.]]></description>
</item>
<item>
	<title><![CDATA[SM2305SRL(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm2305srl-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:56:26</pubDate>
	<description><![CDATA[The SM2305SRL P-channel MOSFET adopts a compact SOT-23 package, designed specifically for high integration circuits. The device has a maximum operating voltage of 20V (VDSS) and can withstand continuous drain current (ID) of up to 5A, demonstrating excellent current processing performance. Its low on resistance (RD (on) of 35mR ensures high efficiency and low power consumption in high current applications. Widely used in power management, load switching, battery protection circuits and other applications, it is your ideal choice for high-precision and low loss power control.]]></description>
</item>
<item>
	<title><![CDATA[IRLML6401PBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml6401pbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:56:15</pubDate>
	<description><![CDATA[The IRLML6401PBF P-channel MOSFET adopts a compact SOT-23 package, designed for efficient space utilization. This device has a maximum operating voltage of 20V (VDSS) and can withstand continuous drain current (ID) of up to 5A, making it suitable for high current processing scenarios. Its conduction resistance (RD (on)) as low as 35mR ensures high efficiency and low losses. Widely used in power conversion, battery management systems, and electronic devices that require high-speed switching and high current control functions, it is an ideal choice for engineers.]]></description>
</item>
<item>
	<title><![CDATA[BSS138BK(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss138bk-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:56:04</pubDate>
	<description><![CDATA[The BSS138BK N-channel MOSFET adopts a compact SOT-23-3L package, designed specifically to save circuit board space. The device operates at a voltage of up to 50V (VDSS) and can withstand a continuous drain current (ID) of 0.2A, making it suitable for low to medium current applications. Its conduction resistance is 1100mR (RD (on)), ensuring precise control under lower current operation. BSS138BK is commonly used in switch circuits, logic level conversion, and power management systems, making it an ideal component choice for various electronic projects.]]></description>
</item>
<item>
	<title><![CDATA[DMN5L06K(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn5l06k-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:55:53</pubDate>
	<description><![CDATA[DMN5L06K N-channel MOSFET adopts a miniaturized SOT-23 package, providing flexible and convenient choices for your electronic design. This device has a rated voltage of 50V (VDSS) and can stably flow a drain current (ID) of 0.2A in a low-power state. Its conduction resistance is 1100mR (RD (on)), which is particularly suitable for low current control and power conversion scenarios. Whether it‘s power management, logic gate circuits, or small consumer electronics products, DMN5L06K MOSFETs can provide you with high-quality solutions with their reliable performance and efficient energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[DMN53D0LQ(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn53d0lq-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:55:41</pubDate>
	<description><![CDATA[The DMN53D0LQ N-channel MOSFET adopts the classic SOT-23 packaging, which is suitable for various conventional electronic circuit designs. The device has a maximum operating voltage of 50V (VDSS) and can provide a continuous drain current (ID) of 0.2A in low-power mode. Its conduction resistance is 1100mR (RD (on)), suitable for applications with low to moderate current levels. This MOSFET is an ideal choice for power management, logic level conversion, and small electronic devices, with a balance between reliability and energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[NVMFS4C310N(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvmfs4c310n-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:55:30</pubDate>
	<description><![CDATA[The NVMFS4C310N N-channel MOSFET adopts a compact DFN5X6-8L package to meet the miniaturization requirements of modern electronic devices. The device supports a maximum voltage of 30V (VDSS) and can stably deliver a drain current of 80A under high loads, demonstrating ultra strong current carrying capacity. Its key advantage is that the conduction resistance is only 4.7m R (RD (on)), greatly improving energy efficiency and reducing power consumption. This MOSFET is particularly suitable for switching power supplies, motor drivers, and other high-end electronic applications that require high current processing and pursue high energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[NTMFS4C029N(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntmfs4c029n-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:55:18</pubDate>
	<description><![CDATA[The NTMFS4C029N N-channel MOSFET adopts a miniature DFN5X6-8L package to meet the miniaturization requirements of modern electronic devices. This device has a working voltage of 30V (VDSS) and can safely withstand continuous drain currents of up to 80A, demonstrating excellent high current processing capabilities. Its conduction resistance is only 4.7m R (RD (on)), greatly reducing power consumption and improving the overall energy efficiency of the system. This MOSFET is particularly suitable for applications in high-power switching power supplies, motor drive controllers, and other applications that require high current carrying and energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[BUK7Y07-30B(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/buk7y07-30b-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:55:07</pubDate>
	<description><![CDATA[BUK7Y07-30B N-channel MOSFET adopts a compact DFN5X6-8L package, designed specifically for high-density circuits. This device has a maximum operating voltage of 30V (VDSS) and can withstand a continuous drain current of up to 80A, demonstrating excellent current processing performance. It is particularly emphasized that its excellent conduction resistance is only 4.7m R (RD (on)), effectively reducing power consumption and improving system energy efficiency. This MOSFET is suitable for high-end electronic applications such as switching power supplies, motor drives, and other applications that require high current and low impedance characteristics.]]></description>
</item>
<item>
	<title><![CDATA[FDMS8888(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdms8888-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:54:56</pubDate>
	<description><![CDATA[FDMS8888 N-channel MOSFET adopts DFN5X6-8L packaging, integrating miniaturization design and efficient heat dissipation performance, bringing excellent user experience. This device has excellent parameters that support a maximum drain source voltage of 30V (VDSS), can withstand continuous currents of up to 50A, and has an ultra-low on resistance (RD (on) of 6.5m R, ensuring high energy efficiency conversion and low loss operation. Widely used in high current fields such as power conversion and motor drive, it is an ideal semiconductor device for improving system performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[FDMS7698(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdms7698-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:54:44</pubDate>
	<description><![CDATA[FDMS7698 N-channel MOSFET adopts DFN5X6-8L packaging, which has efficient heat dissipation and miniaturization characteristics, providing flexible layout solutions for your design. The device has excellent parameters that support a maximum drain source voltage of 30V (VDSS), can safely carry a continuous current of 50A, and a low on resistance (RD (on) of 6.5m R, ensuring the advantages of high efficiency and low loss. Widely used in high current processing fields such as power conversion and motor drive, it is an ideal semiconductor component choice for improving system performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[CSD17307Q5A(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/csd17307q5a-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:54:33</pubDate>
	<description><![CDATA[CSD17307Q5A N-channel MOSFET adopts DFN5X6-8L packaging, achieving a perfect balance between compact size and efficient heat dissipation. This device has superior parameters that support a maximum drain source voltage of 30V (VDSS) and can provide a stable 50A continuous current. Thanks to its ultra-low on resistance (RD (on) of 6.5m R, it ensures high energy efficiency conversion and reduces power consumption. Widely used in high current fields such as power conversion and motor drive, it is an ideal semiconductor device for improving system performance and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[SM6536D1RL(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm6536d1rl-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:54:21</pubDate>
	<description><![CDATA[The SM6536D1RL N-channel MOSFET adopts a compact DFN5X6-8L package, integrating efficient heat dissipation and miniaturization design. This device has strong performance and a maximum drain source voltage (VDSS) of 30V, which can stably transmit a continuous high current of 50A. Its on resistance (RD) as low as 6.5m R ensures excellent energy efficiency and low loss operation. Widely used in high current processing scenarios such as power conversion and motor drive, it is an ideal semiconductor component for improving system performance and implementing energy-saving strategies.]]></description>
</item>
<item>
	<title><![CDATA[SIR462DP-T1-GE3(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sir462dp-t1-ge3-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:54:10</pubDate>
	<description><![CDATA[The SIR462DP-T1-GE3 N-channel MOSFET adopts advanced DFN5X6-8L packaging, combining compact size and efficient heat dissipation. This device has outstanding performance, with a maximum drain source voltage of 30V (VDSS), capable of handling continuous currents up to 50A, and a conduction resistance as low as 6.5m R (RD (on)), ensuring strong power conversion capability and energy-saving effects. Widely used in high current fields such as power management and motor drive, it is an ideal semiconductor component choice for improving system performance and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[RJK0365DPA(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/rjk0365dpa-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:53:59</pubDate>
	<description><![CDATA[RJK0365DPA N-channel MOSFET adopts modern DFN5X6-8L packaging technology, achieving excellent miniaturization and efficient heat dissipation. The key features of this device include supporting a maximum drain source voltage of 30V (VDSS), providing stable 50A continuous current, and its on resistance (RD (on) as low as 6.5m R, ensuring excellent energy efficiency and low losses. Widely used in high current application scenarios such as power conversion and motor drive, it is an ideal semiconductor component for improving system performance and achieving energy-saving goals.]]></description>
</item>
<item>
	<title><![CDATA[NTMFS4C032N(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntmfs4c032n-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:53:47</pubDate>
	<description><![CDATA[The NTMFS4C032N N-channel MOSFET adopts a compact DFN5X6-8L package, combining excellent heat dissipation performance and small-sized design. This device has excellent parameters and a maximum drain source voltage (VDSS) of 30V. It can withstand a continuous high current of 50A and has a conduction resistance of only 6.5m R, achieving high efficiency and low loss electrical energy conversion. Widely used in high current fields such as power management and motor drive, it is an ideal semiconductor component for improving system performance and energy conservation and emission reduction.]]></description>
</item>
<item>
	<title><![CDATA[FDMS8880(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdms8880-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:53:36</pubDate>
	<description><![CDATA[The FDMS8880 N-channel MOSFET adopts advanced DFN5X6-8L packaging technology, balancing miniaturization and efficient heat dissipation performance. This device has significant characteristics, with a rated drain source voltage (VDSS) of up to 30V and the ability to withstand a continuous high current of 50A. Its ultra-low on resistance (RD (on) of 6.5m R ensures excellent energy efficiency conversion and low loss operation. Widely used in industries such as power conversion, battery management, and motor drive, it is an ideal semiconductor component choice for improving system performance and implementing energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[SI7139DP-T1-GE3(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7139dp-t1-ge3-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:53:24</pubDate>
	<description><![CDATA[SI7139DP-T1-GE3 P-channel MOSFET adopts a compact DFN5X6-8L package, which not only has good heat dissipation performance, but also has a compact size for easy integration. The key parameters of the device are as follows: the maximum drain source voltage (VDSS) is 30V, which can withstand continuous currents up to 70A, and has a low on resistance (RD (on) of 6m R, ensuring efficient power conversion and lower energy consumption. Widely used in power conversion, motor drive and other fields, it is an ideal semiconductor component for optimizing system performance and achieving energy-saving goals.]]></description>
</item>
<item>
	<title><![CDATA[FDMS6673BZ(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdms6673bz-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:53:13</pubDate>
	<description><![CDATA[The FDMS6673BZ P-channel MOSFET adopts advanced DFN5X6-8L packaging, integrating excellent heat dissipation and compact volume. This device has superior performance, with a maximum drain source voltage (VDSS) of 30V, can support continuous working currents of up to 70A, and a conduction resistance (RD (on)) as low as 6m R, effectively improving system energy efficiency and reducing losses. Widely used in high current scenarios such as power conversion and motor drive, it is an ideal semiconductor device choice for pursuing high-performance and energy-saving applications.]]></description>
</item>
<item>
	<title><![CDATA[BSC080P03LSG(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc080p03lsg-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:53:01</pubDate>
	<description><![CDATA[BSC080P03LSG P-channel MOSFET adopts a compact DFN5X6-8L package, which has excellent heat dissipation performance and space optimization design. The device has a strong rated drain source voltage (VDSS) of up to 30V and can withstand a continuous high current of 70A. The low on resistance (RD) of 6m R ensures high efficiency and low power consumption performance. Widely used in high current processing fields such as power conversion and motor drive, it is an ideal semiconductor component choice for improving system performance and implementing energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[AONS21357(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aons21357-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:52:50</pubDate>
	<description><![CDATA[AONS21357 P-channel MOSFET adopts a miniaturized DFN5X6-8L package, which has excellent heat dissipation performance and is suitable for compact space layout. The device parameter advantage clearly supports a maximum drain source voltage of 30V (VDSS), can provide continuous current of up to 70A, and has a conduction resistance of only 6m R, effectively improving system efficiency and reducing power consumption. Widely used in various high current scenarios such as power conversion and motor drive, it is the ideal semiconductor device choice for your pursuit of high-performance and energy-saving design.]]></description>
</item>
<item>
	<title><![CDATA[SIRA01DP-T1-GE3(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sira01dp-t1-ge3-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:52:38</pubDate>
	<description><![CDATA[SIRA01DP-T1-GE3 P-channel MOSFET adopts a compact DFN5X6-8L package, integrating efficient heat dissipation and miniaturization. This device has a distinctive feature of a maximum drain source voltage (VDSS) of 30V, capable of carrying a continuous operating current of up to 90A, and a conduction resistance (RD (on) as low as 3.6m R, significantly improving power conversion efficiency and reducing energy consumption. Widely used in power conversion, motor drive and other fields with high current demand, it is a preferred semiconductor device for improving system performance and achieving energy-saving goals.]]></description>
</item>
<item>
	<title><![CDATA[SI7145DP-T1-GE3(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7145dp-t1-ge3-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:52:27</pubDate>
	<description><![CDATA[Hot selling SI7145DP-T1-GE3 P-channel MOSFET, using DFN5X6-8L packaging technology, integrates compact size and efficient heat dissipation function. This device has excellent performance, with a maximum withstand voltage value of 30V (VDSS), supporting continuous operating currents of up to 110A, and a conduction resistance (RD (on) as low as 3m R, ensuring excellent energy conversion efficiency and low power consumption performance. Widely used in high current load scenarios, such as power conversion, motor drive and other industries, it is an ideal semiconductor solution for improving system performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[BSC030P03NS3G(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc030p03ns3g-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:52:15</pubDate>
	<description><![CDATA[The BSC030P03NS3G P-channel MOSFET adopts advanced DFN5X6-8L packaging, achieving a perfect fusion of small size and efficient heat dissipation. This device has outstanding specifications and a maximum drain source voltage (VDSS) of 30V, capable of handling continuous high currents up to 110A. The ultra-low on resistance (RD (on) of 3m R makes it perform well during operation, greatly improving system energy efficiency and reducing losses. Widely suitable for high-power applications such as power conversion and motor drive, it is an ideal semiconductor device choice for pursuing efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[FDMS6681Z(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdms6681z-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:52:03</pubDate>
	<description><![CDATA[The FDMS6681Z P-channel MOSFET adopts a compact DFN5X6-8L package, which combines excellent heat dissipation performance and high integration. The device has excellent characteristics and a rated drain source voltage (VDSS) of 30V, capable of carrying continuous currents up to 110A. Its excellent 3m R on resistance (RD (on)) significantly improves energy efficiency and reduces power loss. Widely used in high-voltage and high current fields, such as power conversion, motor drive, etc., it is an ideal semiconductor component for improving system performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[PXP012-30QLJ(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/pxp012-30qlj-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:51:52</pubDate>
	<description><![CDATA[This field-effect transistor is P-type with a current of 40A, which can meet a certain degree of power demand. Voltage of 30V, capable of stable operation in common circuits. The typical internal resistance value is 13mR, and the energy loss is relatively moderate. VGS is 20V. In the field of consumer electronics, it can be used for current control of specific power moderate electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[MDV3605URH(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/mdv3605urh-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:51:40</pubDate>
	<description><![CDATA[This field-effect transistor is P-type, with a current of 40A, and can carry a certain power. Voltage 30V, suitable for various common circuit scenarios. The typical internal resistance value is 13mR, and the energy loss is within a reasonable range. VGS is 20V. In the field of consumer electronics, it can be used for current regulation of specific medium power electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRFHM9331PBF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfhm9331pbf-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:51:29</pubDate>
	<description><![CDATA[This field-effect transistor is P-type, with a current of 40A, and can handle a certain power load. Voltage of 30V, capable of stable operation in various common circuit environments. The typical internal resistance value is 13mR. VGS is 20V. In the field of consumer electronics, it can be used for current control of specific medium power electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SI7423DN-T1-E3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7423dn-t1-e3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:51:17</pubDate>
	<description><![CDATA[This field-effect transistor is P-type with a current of 40A, which can meet certain power requirements. Voltage 30V, suitable for various common circuit scenarios. The typical internal resistance value is 13mR, and the energy loss is relatively moderate. VGS is 20V. In the field of consumer electronics, it can be used for current regulation of specific medium power electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SI7121ADN-T1-GE3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7121adn-t1-ge3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 07:51:06</pubDate>
	<description><![CDATA[This field-effect transistor is P-type, with a current of 40A, and can carry a certain amount of power. Voltage of 30V, capable of stable operation in various common circuits. The typical internal resistance value is 13mR. VGS is 20V. In the field of consumer electronics, it can be used for current control of specific power moderate electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[DMP3036SFG(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp3036sfg-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:36:24</pubDate>
	<description><![CDATA[This field-effect transistor is P-type, with a current of 40A, and can adapt to certain power requirements. The voltage is 30V, suitable for various common circuit environments. The typical internal resistance value is 13mR. VGS is 20V. In the field of consumer electronics, it can be used for current regulation and stable operation of specific medium power electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[DMP3008SFG(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp3008sfg-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:36:12</pubDate>
	<description><![CDATA[This field-effect transistor is P-type, with a current of 40A, and can carry a certain degree of power. Voltage 30V, stable operation in various common circuits. The typical internal resistance value is 13mR. VGS is 20V. In the field of consumer electronics, it can be used for current control of specific medium power electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[AON7403(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon7403-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:35:59</pubDate>
	<description><![CDATA[This field-effect transistor is P-type with a current of 40A, which can meet certain power requirements. Voltage 30V, suitable for various common circuit scenarios. The typical internal resistance value is 13mR. VGS is 20V. In the field of consumer electronics, it can be used for current regulation and stable operation of specific power moderate electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRF100S201(TO-263)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf100s201-to-263-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:35:47</pubDate>
	<description><![CDATA[IRF100S201 is a high-performance N-channel MOSFET designed for high current and high efficiency applications in a TO-263 package. The device can operate stably at a voltage of 100V and support continuous currents up to 260A, especially suitable for large power systems, equipment switches, and power conversions. Its outstanding conduction resistance is only 2.4m R, effectively reducing power consumption and significantly improving system energy efficiency. The IRF100S201 MOS transistor is your ideal choice for achieving powerful power transmission and energy conservation and environmental protection.]]></description>
</item>
<item>
	<title><![CDATA[IRF1407PBF(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf1407pbf-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:35:35</pubDate>
	<description><![CDATA[IRF1407PBF is a high-performance N-channel MOSFET designed in a TO-220 package specifically to meet the challenges of high voltage and ultra-high current applications. The device has a breakdown voltage of 120V and an amazing continuous current processing capability of 125A, making it particularly suitable for scenarios such as large-scale power conversion and motor drive. Its excellent conduction resistance is only 6m R, which can maintain low power consumption and high efficiency even during full load operation. Choose IRF1407PBF MOSFET to inject surging power and excellent energy efficiency into your engineering project.]]></description>
</item>
<item>
	<title><![CDATA[IRF540ZPBF(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf540zpbf-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:35:22</pubDate>
	<description><![CDATA[IRF540ZPBF is a high-performance N-channel MOSFET designed for high voltage and high current applications using the classic TO-220 package. It has a rated voltage of 100V and a continuous current processing capacity of up to 70A, making it particularly suitable for power conversion, motor drive, and other fields. The conduction resistance is as low as 8.5m R, ensuring high efficiency and low power consumption during high current operation. Choose the IRF540ZPBF MOS transistor to give your design both strong power and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[FDD3860(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdd3860-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:35:10</pubDate>
	<description><![CDATA[FDD3860 is a high-performance N-channel MOSFET that uses the common TO-252-2L package, making it particularly suitable for high voltage and high current applications such as power conversion and motor drive. This device can withstand a working voltage of 100V and supports a continuous current of 30A, demonstrating excellent current processing capabilities. Its conduction resistance is as low as 35m R, effectively reducing power loss and improving system energy efficiency. Choosing FDD3860 MOSFET will bring you a more stable and efficient circuit design experience.]]></description>
</item>
<item>
	<title><![CDATA[AOD2916(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod2916-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:34:58</pubDate>
	<description><![CDATA[AOD2916 is a high-performance N-channel MOSFET designed in a TO-252-2L package to meet the needs of high voltage and high current applications. Working voltage up to 100V, continuous current carrying capacity up to 30A, especially suitable for power conversion, motor drive and other scenarios. Its conduction resistance is only 35m R, ensuring excellent energy efficiency and low power loss during high current operation. AOD2916 MOSFET is an ideal choice for building efficient and stable electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[STD25N10F7(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/std25n10f7-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:34:45</pubDate>
	<description><![CDATA[STD25N10F7 is a high-performance N-channel MOSFET designed to handle high voltage and high current tasks in a TO-252-2L package. Its working voltage can reach up to 100V, and its continuous current carrying capacity can reach 30A, especially suitable for applications such as power conversion and motor drive. The unique advantage lies in a conducting resistance of only 35m R, effectively ensuring low loss and high efficiency performance under high current operating conditions. Choose STD25N10F7 MOSFET to give your circuit design the characteristics of higher power and better energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[STD25NF10LT4(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/std25nf10lt4-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:34:33</pubDate>
	<description><![CDATA[STD25NF10LT4 is an N-channel MOSFET designed for high current and high voltage applications in a TO-252-2L package. It has a working voltage of 100V and a continuous current carrying capacity of 30A, making it particularly suitable for power conversion, motor drive and other fields. The key feature is that the conduction resistance is only 35m R, effectively improving system energy efficiency and reducing power consumption. This MOSFET is an ideal choice for many high-power electronic devices due to its excellent performance and reliability.]]></description>
</item>
<item>
	<title><![CDATA[NTD6415ANLT4G(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntd6415anlt4g-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:34:21</pubDate>
	<description><![CDATA[NTD6415ANLT4G is a high-performance N-channel MOSFET designed in a compact TO-252-2L package, suitable for high-power and high current applications. This device has a high withstand voltage of 100V and a continuous current processing capacity of 30A, making it particularly suitable for high demand fields such as power conversion and motor drive. Its conduction resistance is only 35m R, effectively reducing power loss and improving overall energy efficiency. The NTD6415ANL MOSFET is the ideal choice for designing efficient and energy-saving electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[IPD30N10S3L34(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ipd30n10s3l34-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:34:09</pubDate>
	<description><![CDATA[IPD30N10S3L34 is a high-performance N-channel MOSFET, packaged in TO-252-2L, specifically designed for high-power, high current applications. This device can operate at a high voltage of 100V and provides a continuous current processing capacity of 30A, making it particularly suitable for harsh environments such as power conversion and motor drive. Its excellent 35m R conduction resistance characteristics greatly reduce power loss and achieve excellent system energy efficiency. Choosing IPD30N10S3L34 MOS transistor injects the soul of surging power and efficient energy conservation into your design.]]></description>
</item>
<item>
	<title><![CDATA[AOD482(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod482-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:33:56</pubDate>
	<description><![CDATA[AOD482 is a high-performance N-channel MOSFET designed for high-power, high current applications in a compact TO-252-2L package. It has a high withstand voltage of 100V and a powerful continuous current processing capability of 30A, making it particularly suitable for power conversion, motor drive, and other applications. The conduction resistance of this device is only 35m R, ensuring low loss and high efficiency even under high current conditions. It is one of the key components for building an efficient and stable electronic system.]]></description>
</item>
<item>
	<title><![CDATA[STD25NF10T4(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/std25nf10t4-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:33:44</pubDate>
	<description><![CDATA[STD25NF10T4 is a high-performance N-channel MOSFET, packaged in TO-252-2L, designed specifically for high-power, high current applications. Its working voltage can reach up to 100V, and its continuous current carrying capacity can reach up to 30A, making it an ideal choice for power conversion, motor drive, and other fields. Of particular note, the conduction resistance of this device is only 35m R, which can minimize power loss and improve system energy efficiency to the greatest extent possible. By using STD25NF10T4 MOSFETs, you can easily achieve your high efficiency and high current control needs.]]></description>
</item>
<item>
	<title><![CDATA[ST36N10D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/st36n10d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:33:32</pubDate>
	<description><![CDATA[ST36N10D is a high-performance N-channel MOSFET designed for high current and high voltage applications using the classic TO-252-2L package. This device provides a withstand voltage of 100V and continuous current processing performance of 30A, especially suitable for high-intensity working environments such as power conversion and motor drive. Its conduction resistance is as low as 35m R, effectively reducing power consumption and improving overall system efficiency. Choosing ST36N10D MOSFETs means choosing the best semiconductor solution for stable, efficient, and high current applications.]]></description>
</item>
<item>
	<title><![CDATA[RD3P200SNFRATL(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/rd3p200snfratl-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:33:19</pubDate>
	<description><![CDATA[RD3P200SNFRATL is a high-performance N-channel MOSFET packaged in the industry standard TO-252-2L, suitable for high-power and high current applications. This device has a high withstand voltage of 100V and a continuous current carrying capacity of up to 30A, ensuring stable operation in fields such as power conversion and motor drive. Its eye-catching 35m R conduction resistance minimizes energy loss in high current operating conditions, thereby improving overall energy efficiency. This MOSFET is the preferred component for achieving efficient and energy-saving electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[IRFR3410PBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr3410pbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:33:07</pubDate>
	<description><![CDATA[IRFR3410PBF is a high-performance N-channel MOSFET designed for high-power, high current applications in a TO-252-2L package. It has a high breakdown voltage of 100V and a continuous current processing capacity of up to 30A, ensuring stable operation under harsh conditions. This device has a conduction resistance of only 35m R, effectively reducing power loss and improving system energy efficiency. It is widely used in strong current control fields such as power converters, motor drives, inverters, etc. It is an ideal choice for achieving efficient and reliable electronic design.]]></description>
</item>
<item>
	<title><![CDATA[FDD3682(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdd3682-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:32:55</pubDate>
	<description><![CDATA[FDD3682 is a high-performance N-channel MOSFET, packaged in standard TO-252-2L, suitable for high-power applications. This device has a high withstand voltage of 100V and a continuous current carrying capacity of up to 30A, making it particularly suitable for high current fields such as power conversion and motor drive. Its conduction resistance is as low as 35m R, ensuring excellent energy efficiency and heat dissipation performance under high load operating conditions. Choosing FDD3682 MOSFET means choosing a powerful, stable, efficient, and energy-saving semiconductor solution.]]></description>
</item>
<item>
	<title><![CDATA[BUK7240-100A(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/buk7240-100a-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:32:43</pubDate>
	<description><![CDATA[BUK7240-100A is a high-performance N-channel MOSFET, packaged in TO-252-2L, suitable for high current applications. It has a high rated voltage of 100V and a continuous current processing capacity of up to 30A, especially suitable for high-voltage power conversion and motor drive fields. The conduction resistance of this device is only 35m R, ensuring excellent energy efficiency even in high current operating conditions, making it an ideal choice for building efficient power systems.]]></description>
</item>
<item>
	<title><![CDATA[SI1013X-T1-GE3(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si1013x-t1-ge3-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:32:30</pubDate>
	<description><![CDATA[SI1013X-T1-GE3 is a P-channel MOSFET that uses an ultra compact SOT-523 package, making it particularly suitable for optimizing the internal space of compact electronic devices. This device has a maximum drain source voltage of 20V (VDSS), can stably transmit 0.7A drain current (ID), and also has a conduction resistance of 260mR (RD (on)), ensuring good performance and low power consumption in low voltage and low current applications. This MOSFET is widely used in power management, battery protection, logic level conversion and other scenarios, and is an ideal semiconductor component for miniaturized electronic product design.]]></description>
</item>
<item>
	<title><![CDATA[RZE002P02TL(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/rze002p02tl-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:32:18</pubDate>
	<description><![CDATA[RZE002P02TL is a P-channel MOSFET designed for portable and space sensitive electronic devices in an ultra compact SOT-523 package. The device specifications include a maximum drain source voltage (VDSS) of 20V, the ability to withstand a drain current of 0.7A (ID), and a conduction resistance of 260mR (RD (on), demonstrating excellent performance in low voltage and low current applications. This MOSFET is suitable for applications in power management, battery protection circuits, logic level conversion, and other fields, making it an ideal choice to improve system efficiency and streamline space.]]></description>
</item>
<item>
	<title><![CDATA[RTE002P02(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/rte002p02-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:32:06</pubDate>
	<description><![CDATA[RTE002P02 is a P-channel MOSFET designed for the miniaturization requirements of modern electronic products, using a sophisticated SOT-523 package. Its working voltage can reach up to 20V and can withstand a continuous current of 0.7A, fully meeting the needs of various low-voltage applications. This device has excellent conduction performance, with a conduction resistance of only 260m R, significantly reducing power loss and improving overall efficiency. Suitable for power switching, battery management systems, and other fields that require precise current control, it is your high-quality choice for optimizing design and pursuing high efficiency and energy conservation.]]></description>
</item>
<item>
	<title><![CDATA[FDY100PZ(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdy100pz-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:31:53</pubDate>
	<description><![CDATA[FDY100PZ is a high-performance P-channel MOSFET using SOT-523 micro packaging, suitable for limited space and demanding application environments. This device operates at a voltage of up to 20V and a maximum continuous current of 0.7A, demonstrating excellent load driving capability. Especially prominent is its low conduction resistance of 260m R, which helps to improve system efficiency and reduce energy consumption. This MOSFET is widely used in power converters, load switches, and other low-voltage electronic devices, making it an ideal component for achieving efficient and energy-saving design.]]></description>
</item>
<item>
	<title><![CDATA[DMP22D6UT(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp22d6ut-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:31:41</pubDate>
	<description><![CDATA[DMP22D6UT is a compact SOT-523 packaged P-channel MOSFET designed specifically for high-density, space limited design solutions. This device has a withstand voltage level of 20V and a maximum continuous current of 0.7A, as well as a low on resistance of 260m R, which can effectively reduce power loss while ensuring performance. Suitable for switch control and power management of various miniaturized and low-voltage electronic devices, it is an ideal choice for precision electronic projects.]]></description>
</item>
<item>
	<title><![CDATA[DMP2004TK(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp2004tk-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:31:28</pubDate>
	<description><![CDATA[DMP2004TK is a P-channel MOSFET, packaged in a mini SOT-523 package, particularly suitable for precision circuit designs with space limitations. This device has excellent electrical performance, with a maximum operating voltage VDSS of 20V, capable of withstanding a continuous current of 0.7A, and a conduction resistance as low as 260mR, ensuring efficient operation at low power consumption. DMP2004TK is widely used in power management and logic level conversion in fields such as smartphones, wearable devices, and IoT modules. With its compact size and excellent performance, it has become an ideal component for modern electronic product design.]]></description>
</item>
<item>
	<title><![CDATA[DMG1013T(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg1013t-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:31:15</pubDate>
	<description><![CDATA[The DMG1013T P-channel MOSFET adopts a sophisticated SOT-523 package, designed specifically for modern compact electronic products. The maximum working voltage VDSS of the device is 20V, with a continuous current carrying capacity of up to 0.7A. It has an excellent 260mR conduction resistance, ensuring efficient operation at low power consumption. Widely used in scenarios such as mobile devices, battery management, and low-voltage system switch control, DMG1013T has become an ideal choice for saving space and improving efficiency in circuit design due to its excellent electrical performance and compact packaging.]]></description>
</item>
<item>
	<title><![CDATA[SMC2207ESC(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/smc2207esc-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:31:03</pubDate>
	<description><![CDATA[The SMC2207ESC P-channel MOSFET adopts the extremely compact SOT-523 package, especially suitable for space limited electronic device design. This device has excellent performance, with a maximum operating voltage VDSS of up to 20V, a continuous current carrying capacity of 0.7A, and a conduction resistance RD (on) of only 260mR, ensuring high efficiency and low power consumption in low current applications. The SMC2207ESC is widely used in power management and signal switching functions in fields such as mobile phones, tablets, and smart wearable devices. With its excellent size advantage and stable performance, it has become your design choice.]]></description>
</item>
<item>
	<title><![CDATA[FTK3139E(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ftk3139e-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:30:51</pubDate>
	<description><![CDATA[The FTK3139E P-channel MOSFET adopts a compact SOT-523 package, which is particularly suitable for circuit designs with strict space requirements. This device has excellent electrical performance, with a maximum operating voltage VDSS of 20V, a continuous current ID of 0.7A, and a conduction resistance RD (on) as low as 260mR, ensuring high energy efficiency in low current applications. Widely used in handheld devices, power management, logic interface conversion, and other applications, FTK3139E has become an ideal component for various microelectronic system designs due to its compact size, excellent performance, and high reliability.]]></description>
</item>
<item>
	<title><![CDATA[DMP21D0UT(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp21d0ut-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:30:38</pubDate>
	<description><![CDATA[The DMP21D0UT P-channel MOSFET adopts a miniature SOT-523 package, specially designed for lightweight electronic products. The device has excellent electrical performance, with a maximum operating voltage of VDSS up to 20V, a continuous current carrying capacity of 0.7A, and a conduction resistance RD (on) as low as 260mR, effectively ensuring efficient operation at low power consumption. This MOSFET is widely used in mobile devices, power management modules, logic level conversion, and other fields. With its compact size, efficient performance, and good stability, it has become an ideal component choice for modern electronic design.]]></description>
</item>
<item>
	<title><![CDATA[FDY102PZ(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdy102pz-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:30:26</pubDate>
	<description><![CDATA[The FDY102PZ P-channel MOSFET adopts a super miniature SOT-523 package, which is particularly suitable for the design requirements of high-density and low-power electronic products. This device has superior electrical performance, with a maximum operating voltage VDSS of up to 20V, a continuous current ID of 0.7A, and a conduction resistance RD (on) as low as 260mR, effectively ensuring energy efficiency performance in low current applications. FDY102PZ MOSFETs are widely used in portable devices, battery protection, logic level conversion and other scenarios. With their compact size and excellent performance, they have become a powerful tool for designers to build efficient circuits.]]></description>
</item>
<item>
	<title><![CDATA[Si2328DS-T1-GE3(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2328ds-t1-ge3-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:30:00</pubDate>
	<description><![CDATA[Si2328DS-T1-GE3 N-channel MOSFET is designed for demanding power applications using an economical and efficient SOT-23-3L package. The device has strong performance, with a maximum operating voltage of VDSS up to 100V, a continuous current carrying capacity of up to 5A, and an excellent 100mR conduction resistance, ensuring low energy consumption even under high-power operation. This MOSFET is widely used in power management, motor drives, inverters, and other fields, and is the preferred component for many engineers to design solutions.]]></description>
</item>
<item>
	<title><![CDATA[ST1002(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/st1002-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:29:48</pubDate>
	<description><![CDATA[The ST1002 N-channel MOSFET is packaged in a compact SOT-23-3L package, specifically designed for high-performance and small volume applications. This device has a rated voltage VDSS of up to 100V, can handle 5A continuous current, and has an excellent on resistance of 100mR, ensuring low energy loss even in high current transmission. The ST1002 MOSFET is suitable for various application scenarios, such as power conversion, load driving, battery management, etc. With its excellent electrical performance and reliability, it has become a wise choice for circuit designers.]]></description>
</item>
<item>
	<title><![CDATA[FDN8601(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdn8601-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:29:35</pubDate>
	<description><![CDATA[FDN8601 N-channel MOSFET is designed for high power density using a space saving SOT-23-3L packaging. This device has excellent characteristics, supporting a working voltage of up to 100V VDSS, with a continuous current capacity of 5A, and a competitive 100mR conducting resistor to achieve high efficiency and low heat loss. Widely used in power switches, motor drives, battery management systems, and other applications, with its excellent performance and reliability, it is your ideal choice for optimizing circuit design and improving system efficiency.]]></description>
</item>
<item>
	<title><![CDATA[RZR025P01TL(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/rzr025p01tl-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:29:21</pubDate>
	<description><![CDATA[Welcome to purchase RZR025P01TL P-channel MOSFET, which adopts high-efficiency SOT-23 packaging and is suitable for various precision electronic devices. This device has excellent electrical performance, with a working voltage of up to VDSS20V, a continuous current capacity of up to ID4.2A, and a conducting resistance as low as 48m R, ensuring excellent energy conversion efficiency and stable circuit control capability. Whether it‘s power management or signal switching applications, it can provide excellent stability and durability, making it the ideal choice for your design projects.]]></description>
</item>
<item>
	<title><![CDATA[ST2341SRG(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/st2341srg-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:29:07</pubDate>
	<description><![CDATA[ST2341SRG is an efficient P-channel MOSFET designed for low-power and high integration circuits in a compact SOT-23 package. Its main feature is that the working voltage VDSS can reach up to 20V, and it can withstand 4.2A continuous drain current, demonstrating strong power management capabilities. The conduction resistance RD (on) of the device is only 48mR, effectively reducing power loss and improving overall energy efficiency. ST2341SRG MOSFETs are widely used in power conversion, battery protection, portable devices, and other fields due to their excellent switching performance, high current carrying capacity, and stable operating performance. They are the ideal semiconductor component choice for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[PMV48XP(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/pmv48xp-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:28:54</pubDate>
	<description><![CDATA[PMV48XP is a high-performance P-channel MOSFET designed for high integration and low-power applications using a miniaturized SOT-23 package. Its core features include a maximum operating voltage VDSS of 20V, a continuous drain current processing capability of 4.2A, and excellent current driving performance. The conduction resistance RD (on) of the device is only 48mR, which is beneficial for reducing system power consumption and improving energy efficiency. PMV48XP MOSFETs, with their excellent switching characteristics, high current carrying capacity, and good stability, are widely used in power conversion, battery protection, portable electronic devices, and many other scenarios. They are the ideal semiconductor component choice for efficient circuit design.]]></description>
</item>
<item>
	<title><![CDATA[DMP2305U(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp2305u-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:28:42</pubDate>
	<description><![CDATA[DMP2305U is an efficient P-channel MOSFET designed for low-power and high integration electronics in a compact SOT-23 package. Its key features include a maximum operating voltage VDSS of 20V, which can withstand continuous drain currents of up to 4.2A, demonstrating excellent current handling capabilities. The conduction resistance RD (on) of the device is only 48mR, effectively reducing power loss and improving system energy efficiency. DMP2305U MOSFETs are widely used in power conversion, battery management, portable electronic devices, and other fields due to their excellent switching performance, high current carrying capacity, and good stability. They are the ideal semiconductor components for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[IRLML6402PBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml6402pbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:28:30</pubDate>
	<description><![CDATA[IRLML6402PBF is a high-performance P-channel MOSFET designed for high integration and low power circuits using a compact SOT-23 package. The product features include a working voltage VDSS of up to 20V, a 4.2A continuous drain current capability, and strong current processing performance. The advantage of the device lies in its extremely low conduction resistance RD (on), which is only 48mR, effectively reducing power consumption and improving overall energy efficiency. The IRLML6402PBF MOSFET is widely used in power conversion, battery management, portable devices, and other fields due to its excellent switching characteristics, high current carrying capacity, and excellent stability. It is the ideal semiconductor component for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[IRLML6402GPBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml6402gpbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:28:17</pubDate>
	<description><![CDATA[IRLML6402GPBF is a high-performance P-channel MOSFET designed for high-performance, low-power applications in a small SOT-23 package. Its core features include a maximum operating voltage VDSS of 20V, which can handle continuous drain currents up to 4.2A, highlighting excellent power management performance. The highlight of the device is its ultra-low conduction resistance RD (on) of only 48mR, which effectively saves energy and improves system efficiency. Thanks to its excellent switching speed, high current carrying capacity, and stable operating performance, the IRLML6402GPBF MOSFET is widely used in power conversion, battery protection, portable electronic devices, and many other fields, making it the ideal semiconductor component for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[DMP2130L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp2130l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:28:05</pubDate>
	<description><![CDATA[DMP2130L is a high-performance P-channel MOSFET designed in a compact SOT-23 package, specifically designed for high integration and low-power applications. Its important features include a maximum working voltage VDSS of 20V, which can easily carry 4.2A continuous drain current, demonstrating strong current processing capabilities. The conduction resistance RD (on) of the device is as low as 48mR, effectively reducing power loss and improving system energy efficiency. DMP2130L MOSFET, with its excellent switching performance, high current carrying capacity, and excellent stability, is widely used in various fields such as power conversion, battery management, portable electronic devices, etc. It is the ideal semiconductor component choice for your design project.]]></description>
</item>
<item>
	<title><![CDATA[DMP2123L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp2123l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:27:53</pubDate>
	<description><![CDATA[DMP2123L is an efficient P-channel MOSFET designed specifically for low-power and high-density electronics, using a small SOT-23 package. Its key features include a maximum withstand voltage VDSS of 20V, which can provide a continuous drain current of up to 4.2A, demonstrating excellent current handling capabilities. The conduction resistance RD (on) of the device is only 48mR, greatly enhancing system energy efficiency and reducing power consumption. DMP2123L MOSFETs are widely used in diverse scenarios such as power management, battery protection, and portable devices due to their excellent switching performance, high current carrying capacity, and stability. They are the ideal high-performance semiconductor components in your design.]]></description>
</item>
<item>
	<title><![CDATA[DMP2120U(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp2120u-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:27:41</pubDate>
	<description><![CDATA[DMP2120U is an efficient P-channel MOSFET designed for low-power and miniaturized electronic devices in a compact SOT-23 package. Its key performance indicators include a withstand voltage level of VDSS up to 20V and a maximum continuous drain current ID of 4.2A, ensuring strong current processing capability. Especially noteworthy is its conduction resistance RD (on) as low as 48mR, which effectively reduces power loss and improves overall energy efficiency. DMP2120U MOSFETs are widely used in power conversion, battery management, portable devices, and other fields due to their excellent switching performance, high current carrying capacity, and excellent stability. They are the ideal semiconductor components for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[NTTFS4C10N(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nttfs4c10n-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:27:28</pubDate>
	<description><![CDATA[The NTTFS4C10N N-channel MOSFET adopts the industry-leading DFN3X3-8L packaging form, fully demonstrating the advantages of miniaturization and high integration. The working voltage VDSS of this device is as high as 30V, which can withstand a continuous drain current of 100A, demonstrating excellent current processing capability. Especially outstanding is its extremely low conduction resistance RD (on) of only 4m R, aimed at optimizing power efficiency and reducing system heating. This MOSFET, with its powerful performance indicators, is widely used in high-power fields such as power conversion and motor drive, providing reliable and efficient solutions for your electronic design.]]></description>
</item>
<item>
	<title><![CDATA[NTTFS4928N(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nttfs4928n-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:27:16</pubDate>
	<description><![CDATA[The NTTFS4928N MOSFET adopts advanced N-channel technology and is packaged in a compact DFN3X3-8L, specifically designed for high-performance circuits. It has a maximum rated voltage of 30V (VDSS) and can stably carry continuous drain current (ID) of up to 100A, demonstrating excellent power processing capabilities. This MOSFET has a conduction resistance of only 4m R (RD (on)), ensuring low power loss even in high current operating conditions. It is an ideal choice for various power conversion, motor drive and other applications.]]></description>
</item>
<item>
	<title><![CDATA[NTTFS4821N(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nttfs4821n-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:27:04</pubDate>
	<description><![CDATA[The NTTFS4821N N-channel MOSFET is designed for compact electronics using a space saving DFN3X3-8L package. This device has excellent electrical performance, with a rated voltage of up to 30V VDSS, and can withstand continuous drain current ID up to 100A, ensuring stable operation in high-intensity current environments. What is particularly noteworthy is its conduction resistance RD (on) below 4m R, which effectively reduces energy consumption and improves system efficiency. This MOSFET is suitable for various high-power application scenarios such as power conversion and motor drive.]]></description>
</item>
<item>
	<title><![CDATA[IRF7351PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7351pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:26:52</pubDate>
	<description><![CDATA[IRF7351PBF is a high-performance N+N channel MOSFET, packaged in a compact SOP-8 package, suitable for various high-performance circuit designs. Its key features include withstanding voltage VDSS up to 60V and providing continuous drain current of up to 15A, ensuring strong power processing capability. Especially unique is that its conduction resistance RD (on) is only 12mR, significantly reducing energy consumption and improving overall system energy efficiency. The IRF7351PBF MOSFET, with its excellent switching performance, high current carrying capacity, and excellent stability, is widely used in various fields such as power conversion, motor drive, inverter systems, etc. It is the ideal semiconductor device choice for designing high-efficiency electronic products.]]></description>
</item>
<item>
	<title><![CDATA[FDS6910(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds6910-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:26:39</pubDate>
	<description><![CDATA[FDS6910 is an efficient N+N channel MOSFET, designed in a space saving SOP-8 packaging form, particularly suitable for applications with high integration and performance requirements. The key parameters of the product are as follows: the working voltage of VDSS can reach up to 30V, providing a sustainable high current processing capacity of 11.5A, fully meeting the demanding power transmission needs. Its conduction resistance RD (on) is only 10mR, greatly reducing power loss and achieving excellent energy efficiency performance. FDS6910 MOSFETs are widely used in power management, motor drives, consumer electronics, and other fields due to their superior switching performance, low conduction resistance, and high stability. They are essential high-quality semiconductor components in your design engineering.]]></description>
</item>
<item>
	<title><![CDATA[BSO150N03MDG(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bso150n03mdg-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:26:27</pubDate>
	<description><![CDATA[BSO150N03MDG is a high-performance N+N channel MOSFET designed for high integration and energy-saving applications in a compact SOP-8 package. Its main specifications include VDSS with a withstand voltage of up to 30V, which can stably carry a continuous drain current of 11.5A, demonstrating excellent power processing performance. Especially outstanding is that the device has an extremely low conduction resistance RD (on) of only 10mR, greatly reducing energy loss and improving overall energy efficiency. BSO150N03MDG MOSFETs are widely used in power conversion, motor drive, consumer electronics, and other fields due to their excellent switching speed, low power consumption, and high stability. They are the ideal semiconductor component choice for your pursuit of high-performance solutions.]]></description>
</item>
<item>
	<title><![CDATA[AO4832(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4832-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:26:15</pubDate>
	<description><![CDATA[AO4832 is a high-performance N+N channel MOSFET, packaged in a compact SOP-8 package, suitable for power control needs of various electronic devices. Its key features include a maximum drain source voltage (VDSS) of 30V, the ability to withstand continuous drain current (ID) of up to 11.5A, and excellent conductivity with a conductivity resistance of only 10m R (RD (on)). This MOSFET, with its excellent current carrying capacity and low conduction loss advantage, is widely used in power conversion, motor drive, load switch control and other fields, making it an ideal choice to improve system efficiency and reliability.]]></description>
</item>
<item>
	<title><![CDATA[SI4202DY-T1-GE3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4202dy-t1-ge3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:26:02</pubDate>
	<description><![CDATA[SI4202DY-T1-GE3 is a high-end N+N channel MOSFET that adopts a miniaturized SOP-8 packaging process, aiming to meet the requirements of modern electronic devices for efficient and compact design. Its core technical parameters include a withstand voltage VDSS of up to 30V and a maximum continuous drain current ID of 11.5A, fully demonstrating powerful power processing efficiency. It is particularly emphasized that the conduction resistance RD (on) of the device is only 10mR, which helps to significantly reduce power consumption and achieve higher energy utilization efficiency.]]></description>
</item>
<item>
	<title><![CDATA[IRF8313PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf8313pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:25:50</pubDate>
	<description><![CDATA[IRF8313PBF is a high-performance N+N channel MOSFET that uses a compact and efficient SOP-8 package, suitable for various applications with limited space and high performance requirements. Its key features include a VDSS withstand voltage value of up to 30V, which can withstand a strong continuous drain current of 11.5A, ensuring excellent power processing capabilities. Of particular note, this MOSFET has excellent on resistance performance, with only 10mR of RD (on), significantly reducing power consumption and improving system energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[AO9926C(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao9926c-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:25:38</pubDate>
	<description><![CDATA[AO9926C is a high-performance N+N channel MOSFET, packaged in a compact SOP-8 package, suitable for various precision electronic devices. It has a rated voltage of 20V VDSS and a continuous drain current ID of up to 8A, ensuring excellent electrical energy processing capabilities. Especially outstanding is that the device has a conduction resistance of only 13m R, effectively reducing power loss and improving system energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[FDS6892A(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds6892a-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:25:25</pubDate>
	<description><![CDATA[The FDS6892A model MOSFET adopts N+N channel technology and is packaged in a compact SOP-8 package, specifically designed for modern high integration circuits. At a rated voltage of 20V VDSS, the device can stably transmit a continuous drain current ID of 8A, while also possessing excellent 13mR conduction resistance RD (on), ensuring high efficiency and low power consumption performance. Widely used in power conversion, load driving and other fields, it is a high-quality semiconductor component that improves system performance and energy conservation and emission reduction.]]></description>
</item>
<item>
	<title><![CDATA[DMN2029USD(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn2029usd-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:25:13</pubDate>
	<description><![CDATA[The DMN2029USD model MOSFET adopts N+N channel technology and is packaged in a compact SOP-8 package, specifically designed for high efficiency and miniaturization in modern electronic devices. At a rated voltage of 20V VDSS, the device can provide a continuous drain current ID of up to 8A and has an excellent 13mR conduction resistance RD (on), ensuring excellent energy conversion efficiency and low power consumption performance. Widely used in power conversion, load switching and other applications, it is an ideal semiconductor component for improving system efficiency and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[SI9926CDY-T1-GE3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si9926cdy-t1-ge3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:25:01</pubDate>
	<description><![CDATA[The SI9926CDY-T1-GE3 model MOSFET adopts innovative N+N channel technology and is packaged in a space saving SOP-8 packaging form, designed specifically for modern high integration electronic devices. At a rated voltage of 20V VDSS, the device can stably carry a continuous drain current ID of 8A and is equipped with an ultra-low 13mR conducting resistor RD (on), achieving high efficiency and low power consumption operation. Widely used in power conversion, load driving and other fields, it is an ideal semiconductor device for optimizing system performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[AO9926B(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao9926b-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:24:49</pubDate>
	<description><![CDATA[The AO9926B model MOSFET adopts N+N channel technology and is packaged in a miniaturized SOP-8 package, specifically designed for high-efficiency circuits. This device can operate stably at a rated voltage of 20V VDSS, providing a continuous drain current ID of up to 8A, and has excellent 13mR conduction resistance RD (on), achieving excellent energy efficiency ratio and low loss performance. Widely used in scenarios such as power conversion and load switching, it is an ideal semiconductor component choice for improving system performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[SI4825DDY-T1-GE3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4825ddy-t1-ge3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:24:36</pubDate>
	<description><![CDATA[The SI4825DDY-T1-GE3 MOSFET model uses cutting-edge P-channel technology and a compact SOP-8 package, designed specifically for the miniaturization and high-performance requirements of modern electronic devices. At a rated voltage of 30V VDSS, the device can stably handle a continuous drain current ID of 9A and has an ultra-low 18mR conduction resistance RD (on), ensuring high efficiency and low power consumption characteristics. Widely used in power conversion, motor drive and other applications, it is an ideal semiconductor device for improving system performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[AO4449(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4449-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:24:24</pubDate>
	<description><![CDATA[The AO4449 model MOSFET adopts leading P-channel technology and is packaged in a miniaturized SOP-8 package, specifically designed for modern high integration circuits. At a rated voltage of 30V VDSS, the device can carry a continuous drain current ID of up to 9A and has a superior 18mR conduction resistance RD (on), ensuring efficient and low-power operation. Widely used in power management, motor drive and other application scenarios, it is an ideal semiconductor component choice for optimizing system performance and energy conservation and emission reduction.]]></description>
</item>
<item>
	<title><![CDATA[AO4411(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4411-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:24:12</pubDate>
	<description><![CDATA[The AO4411 model MOSFET is manufactured using advanced P-channel technology and packaged in a compact SOP-8 package, specifically designed for modern high integration circuits. At a rated voltage of 30V VDSS, the device can stably carry a continuous drain current ID of 9A and has an ultra-low 18mR conduction resistance RD (on), achieving excellent energy efficiency and low power consumption performance. Widely used in power conversion, motor drive and other fields, it is an ideal semiconductor component for improving system performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[SI4435DDY-T1-GE3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4435ddy-t1-ge3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:23:59</pubDate>
	<description><![CDATA[The SI4435DDY-T1-GE3 model MOSFET adopts an efficient P-channel process and is packaged in a compact SOP-8 package, specifically designed for high integration circuits. At a rated voltage of 30V VDSS, the device can easily handle a continuous drain current ID of 9A and has an excellent 18mR conduction resistance RD (on), achieving excellent energy efficiency and low power consumption performance. Widely used in power management, motor drive and many other scenarios, it is an ideal semiconductor component for optimizing system performance and energy conservation and emission reduction.]]></description>
</item>
<item>
	<title><![CDATA[DMP3037LSS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp3037lss-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:23:47</pubDate>
	<description><![CDATA[The DMP3037LSS model MOS transistor is manufactured using advanced P-channel technology and packaged in the space saving SOP-8 format, designed specifically for the miniaturization and high-performance requirements of modern electronic devices. This device can withstand a continuous drain current ID of up to 9A at a rated voltage of 30V VDSS, and has an extremely low 18mR conduction resistance RD (on), effectively improving system efficiency and reducing power consumption. Widely used in scenarios such as power conversion and motor drive, it is an ideal semiconductor device choice for improving system performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[AO4419(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4419-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:23:35</pubDate>
	<description><![CDATA[The AO4419 model MOSFET adopts P-channel technology and is packaged in a compact SOP-8 casing, which is particularly suitable for modern high-density circuit design needs. At a rated voltage of 30V VDSS, the device is capable of carrying a continuous drain current ID of 9A with a conduction resistance RD (on) of only 18mR, ensuring excellent energy efficiency and low power consumption performance. Widely used in power management, motor drive and other fields, it is a preferred semiconductor component for enhancing system performance and energy conservation and emission reduction.]]></description>
</item>
<item>
	<title><![CDATA[FDS9431A(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds9431a-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:23:22</pubDate>
	<description><![CDATA[The FDS9431A MOSFET is manufactured based on advanced P-channel technology and adopts a compact SOP-8 packaging specification, specifically designed for the miniaturization and high efficiency requirements of modern electronic devices. Under the rated voltage of 30V VDSS, the device can safely handle 5A continuous drain current ID and has an ultra-low 43mR conduction resistance RD (on), ensuring efficient and energy-saving operation. Widely used in power conversion, motor drive and other fields, it is an ideal semiconductor component for improving system performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[FDS9400A(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds9400a-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:23:10</pubDate>
	<description><![CDATA[The FDS9400A MOSFET model adopts efficient P-channel technology and is packaged in a compact SOP-8 package, designed specifically for compact electronic devices. At a rated voltage of 30V VDSS, the device can stably provide 5A drain current ID and has an extremely low 43mR conduction resistance RD (on), ensuring high efficiency and low power consumption performance. Widely used in power conversion, load driving and other applications, it is an ideal semiconductor component for optimizing system performance and achieving energy-saving goals.]]></description>
</item>
<item>
	<title><![CDATA[IRF9335(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf9335-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:22:58</pubDate>
	<description><![CDATA[The IRF9335 MOSFET is designed based on advanced P-channel technology and adopts an economical SOP-8 packaging form, providing assurance for the miniaturization and high efficiency of modern electronic devices. At a rated voltage of 30V VDSS, the device can continuously handle a drain current ID of 5A and has an ultra-low conduction resistance RD (on) of 43mR, achieving excellent energy conversion efficiency and energy-saving effects. Widely used in power management, motor drive and other fields, it is the preferred semiconductor component for improving system performance and energy conservation and emission reduction.]]></description>
</item>
<item>
	<title><![CDATA[AO4403(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4403-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:22:46</pubDate>
	<description><![CDATA[The AO4403 model MOSFET is manufactured using advanced P-channel technology and adopts a compact SOP-8 packaging form, designed specifically for the miniaturization and high efficiency requirements of modern electronic devices. At a rated voltage of 30V VDSS, the device can stably carry 5A continuous drain current ID and has an industry-leading conduction resistance RD (on) as low as 43mR, ensuring excellent power conversion efficiency and energy-saving performance. Widely used in scenarios such as power conversion and load driving, it is an ideal semiconductor component choice for improving system performance.]]></description>
</item>
<item>
	<title><![CDATA[FDFS2P753Z(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdfs2p753z-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:22:33</pubDate>
	<description><![CDATA[The FDFS2P753Z model MOSFET adopts exquisite P-channel technology and is packaged in a compact SOP-8 package, which is particularly suitable for modern high integration circuit design. This device operates stably at a rated voltage of 30V VDSS and can withstand a strong continuous drain current ID of 5A. It also has the industry-leading 43mR low conduction resistance RD (on), achieving high efficiency and low power consumption performance. Widely used in power management, motor drive and other fields, it is a high-quality semiconductor component that optimizes system performance and is energy-saving and environmentally friendly.]]></description>
</item>
<item>
	<title><![CDATA[SM4405PRL(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm4405prl-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:22:21</pubDate>
	<description><![CDATA[The SM4405PRL model MOSFET adopts advanced P-channel technology and is packaged in a compact SOP-8, tailored for modern high-density circuit design. The device can operate stably at a rated voltage of 30V VDSS, carrying a continuous drain current ID of up to 5A, and is equipped with an ultra-low 43mR conducting resistor RD (on) to ensure efficient and energy-saving operation. Widely used in various fields such as power conversion and motor drive, it is an ideal semiconductor component for improving system performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[DMP3098LSS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp3098lss-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:22:09</pubDate>
	<description><![CDATA[The DMP3098LSS model MOSFET adopts high-performance P-channel technology and is packaged in a space saving SOP-8 package, specifically designed for modern compact electronic design. This device can operate stably at a rated voltage of 30V VDSS, providing a continuous drain current ID of up to 5A, and has an extremely low 43mR conduction resistance RD (on), ensuring high efficiency and low power consumption performance. Widely used in various fields such as power management and load driving, it is an ideal semiconductor component for improving system performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[ST9435A(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/st9435a-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:21:56</pubDate>
	<description><![CDATA[The ST9435A MOSFET model utilizes advanced technology in the P-channel architecture and adopts a compact SOP-8 packaging form, designed specifically for the miniaturization and high-performance requirements of modern electronic products. This device can operate stably at a rated voltage of 30V VDSS, providing a continuous drain current ID of up to 5A, and has an excellent 43mR conduction resistance RD (on), ensuring low power consumption and high performance. Widely used in scenarios such as power conversion and motor drive, it is a high-quality semiconductor component that optimizes system performance and reduces energy consumption.]]></description>
</item>
<item>
	<title><![CDATA[AM9435SA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/am9435sa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:21:44</pubDate>
	<description><![CDATA[The AM9435SA model MOSFET adopts P-channel technology and is presented in a compact SOP-8 package, providing strong support for the miniaturization design of modern electronic devices. This device can stably transmit a continuous drain current ID of 5A at a rated voltage of 30V VDSS, and has the industry-leading low conduction resistance RD (on) 43mR, effectively improving the system‘s energy efficiency ratio and reducing power consumption. Widely used in scenarios such as power conversion and motor drive, it is an ideal semiconductor device choice for optimizing system performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[SM9435PRL(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm9435prl-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:21:32</pubDate>
	<description><![CDATA[The SM9435PRL model MOSFET adopts advanced P-channel technology and is packaged in a compact SOP-8, providing an ideal solution for modern compact circuit design. The device operates stably at a rated voltage of 30V VDSS, can withstand a maximum continuous drain current ID of 5A, and has an ultra-low on resistance RD (on) of only 43mR, ensuring high efficiency and low power consumption performance. This MOSFET is widely used in power management, load driving, and other fields, and is the preferred semiconductor component for improving system performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[FDS9435A(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds9435a-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:21:20</pubDate>
	<description><![CDATA[The FDS9435A MOSFET is manufactured using sophisticated P-channel technology and packaged in a space saving SOP-8 format, specifically designed for the miniaturization of modern electronic devices. This device has a rated voltage of 30V VDSS, can withstand a powerful continuous drain current ID of 5A, and has a conduction resistance RD (on) as low as 43mR, ensuring efficient and low loss operation. This MOSFET is widely used in scenarios such as power conversion and load switching, and its excellent electrical performance has become a key component for optimizing system efficiency.]]></description>
</item>
<item>
	<title><![CDATA[SIR802DP-T1-GE3(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sir802dp-t1-ge3-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:21:07</pubDate>
	<description><![CDATA[SIR802DP-T1-GE3 is a high-performance N-channel MOSFET designed for high power density and low-power applications in a compact DFN5X6-8L package. At a voltage of 20V VDSS, the device can stably deliver continuous currents up to 80A, demonstrating excellent current carrying capacity. Its uniqueness lies in its ultra-low conduction resistance RD (on) of only 3.5mR, which effectively improves system energy efficiency and reduces power consumption. SIR802DP-T1-GE3 is undoubtedly your ideal choice for power conversion, motor drive, and other applications that require high-performance and low loss MOSFETs.]]></description>
</item>
<item>
	<title><![CDATA[SIR424DP-T1-GE3(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sir424dp-t1-ge3-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:20:55</pubDate>
	<description><![CDATA[SIR424DP-T1-GE3 is an N-channel MOSFET designed in a miniaturized DFN5X6-8L package, specifically designed for high power density and low energy applications. At a voltage of 20V VDSS, the device can stably provide a continuous current of 80A, meeting the requirements of high current processing. Its core advantage lies in its 3.5mR ultra-low conduction resistance RD (on), greatly optimizing energy efficiency performance and reducing power consumption. Widely suitable for power conversion, motor drive, and other situations that require high-performance MOSFETs, SIR424DP-T1-GE3 is your ideal choice for achieving efficient and energy-saving design.]]></description>
</item>
<item>
	<title><![CDATA[NTR1P02L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntr1p02l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:20:43</pubDate>
	<description><![CDATA[The NTR1P02L MOSFET is designed in a compact SOT-23 package specifically for high-performance circuits. This P-channel MOSFET has a maximum drain source voltage (VDSS) of 20V and can provide continuous drain current (ID) of up to 2.3A while ensuring stability. Its excellent conduction resistance is only 120m R, effectively reducing power consumption and improving system efficiency, making it an ideal choice for power management and switch control of your electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[NTR1P02(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntr1p02-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:20:31</pubDate>
	<description><![CDATA[Product IntroductionThe MOSFET with model NTR1P02 adopts a miniaturized SOT-23 packaging process and is a high-performance P-channel MOSFET. Its core parameters include a maximum withstand voltage VDSS of up to 20V, strong continuous drain current capability of 2.3A, and a conduction resistance as low as 120mR (RD (on)) during operation, ensuring high efficiency and low energy consumption during device operation. Suitable for various power conversion, load switching and other application scenarios, it is the ideal switch component choice in your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[NTMFS4C08N(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntmfs4c08n-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:20:18</pubDate>
	<description><![CDATA[NTMFS4C08N is an efficient N-channel MOSFET, designed in a compact DFN5X6-8L package, particularly suitable for high-performance circuit designs with limited space. This device supports a maximum working voltage of 30V VDSS and has a continuous current processing capability of up to 80A, ensuring excellent power transmission performance. Its outstanding feature is the ultra-low conduction resistance RD (on) of only 4.3mR, which greatly improves energy efficiency and reduces system losses. Whether in power conversion, motor drive, or other electronic applications that require high efficiency and low consumption, NTMFS4C08N is an ideal semiconductor component choice.]]></description>
</item>
<item>
	<title><![CDATA[NTMFS4C027N(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntmfs4c027n-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:20:06</pubDate>
	<description><![CDATA[NTMFS4C027N is a high-performance N-channel MOSFET designed with advanced DFN5X6-8L packaging, specifically for compact and high-efficiency applications. The device can operate stably under 30V voltage VDSS, providing up to 80A continuous current processing capability to meet high current requirements. Its uniqueness lies in its ultra-low conduction resistance RD (on) of 4.3mR, which significantly reduces system losses and improves overall energy efficiency. NTMFS4C027N is widely used in power conversion, motor drive, and various efficient and energy-saving electronic devices, making it the ideal choice for optimizing circuit design.]]></description>
</item>
<item>
	<title><![CDATA[NTMFS4955N(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntmfs4955n-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:19:54</pubDate>
	<description><![CDATA[NTMFS4955N is an efficient N-channel MOSFET designed in a miniaturized DFN5X6-8L package, dedicated to optimizing space occupancy and system performance. This device operates stably under a voltage of 30V VDSS, providing up to 80A of continuous current processing capability to meet high-power application requirements. Its highlight lies in the ultra-low conduction resistance RD (on) of only 4.3mR, which significantly improves energy conversion efficiency and reduces power consumption. NTMFS4955N is suitable for power conversion, motor drive, and other applications that require high efficiency and low loss, making it the ideal semiconductor component choice in your design.]]></description>
</item>
<item>
	<title><![CDATA[NTMFS4941N(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntmfs4941n-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:19:41</pubDate>
	<description><![CDATA[NTMFS4941N is a high-performance N-channel MOSFET packaged in a compact DFN5X6-8L package, particularly suitable for applications with limited space and high efficiency conversion requirements. This device can operate stably under a maximum voltage of 30V VDSS, providing a continuous current of up to 80A, demonstrating excellent current carrying capacity. Its conduction resistance RD (on) is as low as 4.3mR, ensuring minimal power loss and highest energy efficiency performance. Whether in power management, motor drive, or other high current applications, NTMFS4941N is your ideal semiconductor solution.]]></description>
</item>
<item>
	<title><![CDATA[NTMFS4939N(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntmfs4939n-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:19:29</pubDate>
	<description><![CDATA[NTMFS4939N is an N-channel MOSFET designed for high efficiency and compact space, using a miniaturized DFN5X6-8L package. Stable operation under 30V voltage VDSS, providing up to 80A continuous current processing capability, suitable for high current application scenarios. Its core advantage lies in the ultra-low conduction resistance RD (on) of 4.3mR, which greatly improves system energy efficiency and reduces power consumption. Whether in power conversion, motor drive, or other high-efficiency requirements, NTMFS4939N is your ideal semiconductor solution.]]></description>
</item>
<item>
	<title><![CDATA[NTMFS4925N(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntmfs4925n-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:19:17</pubDate>
	<description><![CDATA[NTMFS4925N is an N-channel MOSFET designed for high power density and low energy applications in a space saving DFN5X6-8L package. This device can operate stably under a voltage of 30V VDSS, providing a continuous current of up to 80A, highlighting its powerful current processing ability. Its highlight lies in the fact that the conduction resistance RD (on) is only 4.3mR, ensuring excellent energy efficiency performance and effectively reducing power consumption. NTMFS4925N is suitable for power conversion, motor drive, and other scenarios that require high power and efficiency. It is an ideal semiconductor component for modern electronic system design.]]></description>
</item>
<item>
	<title><![CDATA[NTMD4840NR2G(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntmd4840nr2g-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:19:05</pubDate>
	<description><![CDATA[NTMD4840NR2G is a high-performance N+N channel MOSFET designed for high current applications in SOP-8 packaging. The device features a maximum operating voltage of VDSS up to 30V, supporting 8.5A continuous drain current, ensuring strong current carrying capacity; A low conduction resistance RD (on) of 15m R effectively reduces power loss and improves overall energy efficiency. Widely used in power conversion, motor drive, battery management systems and other scenarios, it is the ideal MOSFET component for your pursuit of efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[NTD3055L170(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntd3055l170-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:18:52</pubDate>
	<description><![CDATA[NTD3055L170 is a high-performance N-channel MOSFET designed for high-power and high-performance applications using a space saving TO-252-2L package. Under the condition of a maximum drain source voltage (VDSS) of 60V, it can stably transmit a drain current (ID) of 20A, demonstrating excellent performance. The conduction resistance is only 27m R, effectively improving system efficiency and reducing energy consumption. Widely used in various fields such as power conversion and motor drive, it is a powerful assistant for engineers to build efficient and reliable electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[BSC057N08NS3G(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc057n08ns3g-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:18:40</pubDate>
	<description><![CDATA[BSC057N08NS3G is a high-performance N-channel MOSFET designed for high power density and low-power applications using advanced DFN5X6-8L packaging technology. This device can operate stably under a voltage of 85V VDSS, while supporting continuous currents of up to 100A, demonstrating excellent power transmission capabilities. Its core advantage lies in its ultra-low conduction resistance RD (on) of only 4.3mR, which minimizes energy loss and improves overall energy efficiency. BSC057N08NS3G is widely used in scenarios such as power conversion, electric equipment drive, and new energy systems, and is an ideal semiconductor solution for pursuing high efficiency and miniaturization.]]></description>
</item>
<item>
	<title><![CDATA[BSC072N08NS5(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc072n08ns5-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:18:28</pubDate>
	<description><![CDATA[BSC072N08NS5 is an efficient N-channel MOSFET packaged in DFN5X6-8L, dedicated to providing excellent power management solutions. The device has a rated voltage of 85V VDSS and can reliably handle continuous currents up to 100A, meeting strict current transmission requirements. The core technological highlight is the ultra-low conduction resistance RD (on) of 4.3mR, which effectively reduces system power consumption and significantly improves energy efficiency. Whether applied in power conversion, motor drive, or new energy fields, BSC072N08NS5 is your ideal semiconductor component choice with excellent electrical performance and compact size.]]></description>
</item>
<item>
	<title><![CDATA[BSC037N08NS5(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc037n08ns5-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:18:15</pubDate>
	<description><![CDATA[BSC037N08NS5 is a high-performance N-channel MOSFET designed for high power density and high efficiency applications in a miniaturized DFN5X6-8L package. This device supports a working voltage of up to 85V VDSS and can provide a robust 100A continuous current output. Particularly outstanding is its conduction resistance RD (on) as low as 4.3mR, greatly improving energy efficiency and reducing system losses. Whether it‘s power conversion, motor drive, or the new energy industry, BSC037N08NS5 is an ideal choice with its excellent electrical performance and compact size.]]></description>
</item>
<item>
	<title><![CDATA[NVMFD5875NL(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvmfd5875nl-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:18:03</pubDate>
	<description><![CDATA[NVMFD5875NL is a high-efficiency N+N channel MOSFET designed for power management and high current applications in a compact DFN5X6-8L package. This device can operate under VDSS conditions of up to 60V voltage and provide continuous current of up to 50A, with strong performance. Its conduction resistance RD (on) is as low as 11mR, effectively saving energy and improving the overall energy efficiency of the system. NVMFD5875NL is suitable for diverse scenarios including power conversion, motor drive, and new energy. With its excellent electrical performance and durability, it has become the preferred semiconductor component for many engineers.]]></description>
</item>
<item>
	<title><![CDATA[NVMFD5485NL(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvmfd5485nl-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:17:50</pubDate>
	<description><![CDATA[NVMFD5485NL is a high-performance N+N channel MOSFET designed for high efficiency and limited space applications using a sophisticated DFN5X6-8L package. This device can operate stably under a maximum voltage of 60V VDSS, providing a continuous current of up to 50A, meeting various high current requirements. Especially outstanding is its low conduction resistance RD (on) of 11mR, which significantly improves system energy efficiency and reduces energy loss.]]></description>
</item>
<item>
	<title><![CDATA[IPG20N06S2L-50A(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ipg20n06s2l-50a-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:17:38</pubDate>
	<description><![CDATA[IPG20N06S2L-50A is a high-performance N+N channel MOSFET, designed for efficient and space limited applications in a compact DFN5X6-8L package. The device supports a voltage of up to 60V VDSS and can stably withstand high currents of 50A, demonstrating outstanding performance. Its highlight lies in the fact that the conduction resistance RD (on) is only 11mR, effectively reducing system power consumption and improving work efficiency. IPG20N06S2L-50A is widely used in power conversion, motor drive, and high-voltage load switching scenarios, making it an ideal semiconductor component for building energy-efficient electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SI7309DN-T1-E3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7309dn-t1-e3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:17:26</pubDate>
	<description><![CDATA[SI7309DN-T1-E3 is a P-channel MOSFET packaged using DFN3X3-8L technology, with a compact structure and strong performance. This device supports working voltage VDSS up to 60V and can effectively handle 15A continuous current, adapting to various high voltage and medium current application environments. Of particular concern is its low conduction resistance RD (on) of 70m R, which helps to reduce system energy loss and improve work efficiency. Whether used for power conversion, motor drive, or other demanding applications, SI7309DN-T1-E3 will become your ideal semiconductor solution with excellent electrical performance and reliable quality.]]></description>
</item>
<item>
	<title><![CDATA[SISB46DN-T1-GE3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sisb46dn-t1-ge3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:17:13</pubDate>
	<description><![CDATA[SISB46DN-T1-GE3 is a high-performance N+N channel MOSFET, designed to meet modern compact circuit design requirements in an ultra compact DFN3X3-8L package. The device features a maximum drain source voltage (VDSS) of up to 40V, providing a powerful continuous drain current (ID) of 40A, particularly outstanding in its ultra-low on resistance (RD (on) of only 7.2m R, effectively reducing power consumption and improving energy efficiency during high current transmission. This MOSFET is widely used in high-frequency switching and high current control applications in power conversion and other fields, making it an ideal choice for efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[NVTFS5C466NL(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvtfs5c466nl-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:17:01</pubDate>
	<description><![CDATA[NVTFS5C466NL is an N-channel MOSFET that uses advanced DFN3X3-8L packaging, suitable for space limited design needs. The device provides a drain source voltage (VDSS) of 40V, supports continuous drain current (ID) up to 60A, and has a conduction resistance (RD (on) as low as 6.9m R, ensuring high efficiency and low loss in high-power applications. Suitable for various scenarios such as power conversion, motor drive, battery management systems, etc., it is an ideal semiconductor component choice for optimizing system performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[NVTFWS008N04C(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvtfws008n04c-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:16:49</pubDate>
	<description><![CDATA[NVTFWS008N04C is a high-performance N-channel MOSFET designed specifically for high-density circuit boards, using a space saving DFN3X3-8L package. The device has a drain source withstand voltage (VDSS) of 40V, can withstand continuous drain current (ID) of up to 60A, and has an excellent on resistance of 6.9m R (RD (on), which performs well in high-efficiency applications and effectively reduces power consumption. This MOSFET is widely used in high-power fields such as power conversion, motor drives, and fast chargers, making it an ideal choice for improving system energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[NVTFS5C471NL(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvtfs5c471nl-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:16:37</pubDate>
	<description><![CDATA[NVTFS5C471NL is a high-performance N-channel MOSFET, packaged in a small DFN3X3-8L package, suitable for modern compact electronic device design. This device has a drain source voltage of 40V (VDSS), can withstand a maximum continuous drain current of 60A (ID), and has a conduction resistance as low as 6.9m R (RD (on)), achieving efficient and low loss operation. Suitable for various high-power applications such as power conversion, motor drive, battery management systems, etc., it is an ideal semiconductor component that pursues high efficiency and good thermal performance.]]></description>
</item>
<item>
	<title><![CDATA[NVTFS008N04C(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvtfs008n04c-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:16:24</pubDate>
	<description><![CDATA[NVTFS008N04C is an N-channel MOSFET that features a compact DFN3X3-8L package, making it particularly suitable for electronic designs with limited space and high integration. The device has a drain source voltage of 40V (VDSS), can withstand continuous drain current (ID) of up to 60A, and has excellent on resistance performance, only 6.9m R (RD (on)), ensuring efficient power conversion and low losses. This MOSFET is widely used in high-power applications such as power converters, battery management systems, and motor drives, making it an ideal choice for improving system performance and energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[NTTFS5C466NL(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nttfs5c466nl-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:16:12</pubDate>
	<description><![CDATA[NTTFS5C466NL is an N-channel MOSFET, packaged in a miniaturized DFN3X3-8L package, particularly suitable for space limited application environments. It has a maximum drain source voltage (VDSS) of 40V, can withstand a strong continuous current (ID) of 60A, and exhibits ultra-low resistance values in a conductive state - only 6.9m R (RD (on)), achieving lower energy consumption and higher energy efficiency performance. This MOSFET is widely used in fields that require high efficiency and low loss, such as power conversion, motor drive, battery management systems, etc. It is your preferred component for high-quality circuit design.]]></description>
</item>
<item>
	<title><![CDATA[NTTFS5C471NL(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nttfs5c471nl-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:16:00</pubDate>
	<description><![CDATA[NTTFS5C471NL is a high-performance N-channel MOSFET designed for high power density and low loss applications in a miniaturized DFN3X3-8L package. The maximum operating voltage VDSS of this device is as high as 40V, capable of withstanding a continuous current of 60A, and the conduction resistance is only 6.9mR, ensuring excellent energy efficiency performance during high current transmission. This MOSFET is suitable for scenarios such as power conversion, motor drive, and fast switching, and is an indispensable key component in modern efficient electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[TPN6R303NC(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/tpn6r303nc-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:15:47</pubDate>
	<description><![CDATA[TPN6R303NC is a high-performance N-channel MOSFET designed with advanced DFN3X3-8L packaging, specifically for compact space and high-performance applications. The rated voltage VDSS reaches 30V and can sustainably carry currents up to 62A, ensuring strong and stable power transmission. Especially outstanding is its extremely low conduction resistance RD (on) of only 5m R, greatly improving equipment energy efficiency and reducing operational losses. Whether in power management, fast chargers, or other portable electronic devices, this MOSFET stands out with excellent electrical performance and becomes your high-quality choice.]]></description>
</item>
<item>
	<title><![CDATA[ZXMP6A17K(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zxmp6a17k-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:15:23</pubDate>
	<description><![CDATA[ZXMP6A17K is a high-quality P-channel MOSFET designed for high efficiency and power density in a miniaturized TO-252-2L package. The working voltage can reach up to VDSS60V, providing powerful 15A continuous current processing capability. Its highlight lies in its ultra-low conduction resistance RD (on) of only 95m R, significantly reducing power loss and optimizing system performance. This MOSFET is widely used in power management, battery protection, and various load switching scenarios. With its excellent performance and stability, it becomes your ideal choice.]]></description>
</item>
<item>
	<title><![CDATA[SPD18P06PG(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/spd18p06pg-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:15:10</pubDate>
	<description><![CDATA[SPD18P06PG is a high-performance P-channel MOSFET designed in a compact TO-252-2L package, suitable for various circuit controls. It has a voltage withstand rating of 60V (VDSS) and can stably carry continuous currents up to 15A. It is worth mentioning that the device has a conduction resistance (RD (on) as low as 95m R, effectively reducing power consumption and improving system energy efficiency. Whether it is power conversion, motor drive, or load switching applications, SPD18P06PG can demonstrate excellent performance and reliability.]]></description>
</item>
<item>
	<title><![CDATA[IPP200N15N3G(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ipp200n15n3g-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:14:58</pubDate>
	<description><![CDATA[IPP200N15N3G is a high-performance N-channel MOSFET that uses the classic TO-220 packaging and is suitable for high-power electronic devices. Its key features include a maximum drain source voltage VDSS of up to 150V, the ability to withstand strong 120A continuous drain current, and a conduction resistance RD (on) of only 9.5mR, ensuring extremely low power loss and high performance even during high current operations. This MOSFET is widely used in high current switching applications such as power conversion, motor drives, and battery management systems.]]></description>
</item>
<item>
	<title><![CDATA[AON1606(DFN1006-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon1606-dfn1006-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:14:46</pubDate>
	<description><![CDATA[AON1606 is an N-channel MOSFET designed for compact and low-power electronic devices using a miniature DFN1006-3L package. Its electrical characteristics include a maximum drain source voltage VDSS of 20V, stable carrying of 0.7A drain current ID, and a conduction resistance RD (on) of only 220mR, ensuring good efficiency performance in low current applications. This MOSFET is widely used in power management, signal switching, battery protection circuits, and low voltage and low current switch control for various portable and mobile devices.]]></description>
</item>
<item>
	<title><![CDATA[BSC123N08NS3G(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc123n08ns3g-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:14:34</pubDate>
	<description><![CDATA[BSC123N08NS3G is an N-channel MOSFET designed for modern high-performance electronic devices in a compact DFN5X6-8L package. The highlight of the device lies in its maximum drain source voltage VDSS of up to 100V, which can withstand a continuous drain current of 75A, and has excellent conductivity performance. The conductivity resistance is only 7.3mR, ensuring low power consumption and high efficiency in high current application environments.]]></description>
</item>
<item>
	<title><![CDATA[BSC070N10NS5(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc070n10ns5-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:14:21</pubDate>
	<description><![CDATA[BSC070N10NS5 is an N-channel MOSFET, packaged in a small DFN5X6-8L package, suitable for limited space application environments. The device has obvious characteristics, with a maximum drain source voltage of 100V (VDSS), capable of carrying continuous drain current (ID) of up to 75A, and excellent conductivity. The conductivity resistance is only 7.3mR (RD (on)), ensuring low power loss in high current transmission. Suitable for high-power and high-efficiency circuit design such as power conversion, battery management systems, and motor drives.]]></description>
</item>
<item>
	<title><![CDATA[ZXMN2F30FH(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zxmn2f30fh-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:14:09</pubDate>
	<description><![CDATA[ZXMN2F30FH is an N-channel MOSFET designed specifically for compact electronics, using a small SOT-23 package. Its key parameters include a maximum drain source voltage VDSS of 20V, which can safely handle continuous drain current IDs up to 2.8A, and a conduction resistance RD (on) of only 37mR, ensuring low power consumption and high efficiency in the conduction state. This MOSFET is widely used in low-voltage switching circuits, power management, battery protection, and internal circuits of various portable smart devices, providing stable and reliable switching performance.]]></description>
</item>
<item>
	<title><![CDATA[SM2302SRL(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm2302srl-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:13:57</pubDate>
	<description><![CDATA[SM2302SRL is an N-channel MOSFET that uses a space saving SOT-23 package, particularly suitable for lightweight electronic devices. Its electrical performance is excellent, with a maximum drain source voltage VDSS of 20V, which can stably provide a continuous drain current ID of 2.8A. At the same time, it has a conduction resistance RD (on) as low as 37mR, ensuring efficient and low-power operation performance. This MOSFET is widely used in various power switch circuits, load switch control, battery protection, and power management modules for portable electronic products.]]></description>
</item>
<item>
	<title><![CDATA[IPD30N06S2L-23(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ipd30n06s2l-23-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:13:45</pubDate>
	<description><![CDATA[IPD30N06S2L-23 is a high-power N-channel MOSFET with a packaging type of TO-252-2L, designed specifically for high-density power supply applications. This device provides a maximum drain source voltage (VDSS) of 60V and can handle a powerful continuous current (ID) of 50A at full load. It also has excellent conduction characteristics with a conduction resistance of only 15mR (RD (on)), greatly reducing power loss and improving system efficiency. Widely used in switch mode power supplies, battery management systems, motor drives, and other applications that require high efficiency.]]></description>
</item>
<item>
	<title><![CDATA[BUK7219-55A(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/buk7219-55a-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:13:32</pubDate>
	<description><![CDATA[BUK7219-55A is a high-performance N-channel MOSFET, packaged in TO-252-2L, aimed at achieving efficient space utilization. The device has powerful specifications, supports a maximum drain source voltage of 60V (VDSS), and can provide continuous drain current (ID) of up to 50A. Particularly outstanding is its on resistance (RD) as low as 15mR, effectively reducing power consumption and enhancing system efficiency.]]></description>
</item>
<item>
	<title><![CDATA[STD60NF06T4(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/std60nf06t4-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:13:20</pubDate>
	<description><![CDATA[STD60NF06T4 is a high-performance N-channel MOSFET, packaged in TO-252-2L, suitable for a wide range of circuit design needs. This device has a maximum drain source voltage (VDSS) of 60V, can withstand continuous drain current (ID) of up to 50A, and exhibits an extremely low 15m R on resistance (RD (on), ensuring high efficiency and low loss even under high current operation. This MOSFET is suitable for various high-power application scenarios, such as power conversion, motor drive, inverter, etc., providing strong and stable current control solutions for your device.]]></description>
</item>
<item>
	<title><![CDATA[AOD442G(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod442g-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:13:08</pubDate>
	<description><![CDATA[AOD442G is an efficient N-channel MOSFET, optimized for space limited design solutions using a miniaturized TO-252-2L package. Its key performance indicators include withstanding a leakage source voltage of up to 60V, being able to stably handle a continuous current of 50A, and particularly outstanding being a low conductivity resistance of only 15mR, ensuring minimal energy loss during operation and improving system efficiency. Widely used in power conversion, motor control, and other high current switching circuit designs, it exhibits excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[IRFU4105ZPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfu4105zpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:12:56</pubDate>
	<description><![CDATA[IRFU4105ZPBF is a high-performance N-channel MOSFET, packaged in a universal TO-252-2L package, suitable for various power management and power conversion applications. Its key parameters include a maximum drain source voltage (VDSS) of up to 60V, which can stably carry a drain current (ID) of 50A. Particularly noteworthy is its on resistance (RD) as low as 15m R, greatly improving system efficiency and reducing energy loss.]]></description>
</item>
<item>
	<title><![CDATA[STD35NF06(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/std35nf06-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:12:43</pubDate>
	<description><![CDATA[STD35NF06 is a high-quality N-channel MOSFET, packaged in a compact TO-252-2L package, suitable for the space optimization needs of modern electronic devices. This device has excellent electrical performance, can withstand a maximum leakage source voltage of 60V, provides continuous current processing capability of up to 50A, and has a resistance of only 15mR in the on state, significantly improving energy efficiency and reducing system heating. This MOSFET is an ideal choice for power conversion, motor drive, and various medium to high current switching circuits.]]></description>
</item>
<item>
	<title><![CDATA[NTD5865NL(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntd5865nl-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:12:31</pubDate>
	<description><![CDATA[NTD5865NL is a high-performance N-channel MOSFET, packaged in TO-252-2L for easy PCB layout design. This device has powerful electrical parameters, with a maximum drain source voltage VDSS of 60V and a continuous drain current ID of up to 50A. In the on state, its on resistance is as low as 15mR, greatly optimizing system efficiency and reducing power loss. This product is particularly suitable for high-performance circuit design in fields such as switching power supplies, DC/DC converters, and motor control.]]></description>
</item>
<item>
	<title><![CDATA[IRFR3806PBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr3806pbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:12:19</pubDate>
	<description><![CDATA[This IRFR3806PBF N-channel MOSFET is manufactured using advanced technology and packaged in TO-252-2L, suitable for high-density installation. Its outstanding performance is reflected in its high voltage resistance of up to 60V, continuous current capacity of up to 50A, and conducting resistance of only 15m R under normal working conditions, effectively reducing power consumption and heat generation, ensuring efficient and stable operation of the equipment, suitable for various high-end power conversion and motor drive applications.]]></description>
</item>
<item>
	<title><![CDATA[DMNH6021SK3Q(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmnh6021sk3q-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:12:07</pubDate>
	<description><![CDATA[DMNH6021SK3Q is a high-performance N-channel MOSFET designed for high current applications in a TO-252-2L package. This device has a rated voltage of 60V VDSS and a continuous current ID of 50A, demonstrating strong power processing capabilities. Its conduction resistance RD (on) is only 15m R, ensuring that it can effectively reduce power consumption and improve system energy efficiency even at high currents. Widely used in power conversion, motor drive, battery management systems and other fields, it is an ideal semiconductor component for building high-power and high-efficiency circuits.]]></description>
</item>
<item>
	<title><![CDATA[IPD042P03L3G(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ipd042p03l3g-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:11:55</pubDate>
	<description><![CDATA[IPD042P03L3G is a high-performance P-channel MOSFET designed for high current applications, using a TO-252-2L package with good heat dissipation. The device provides a rated voltage of 30V VDSS and can withstand continuous current ID of up to 120A, demonstrating its excellent power processing capabilities. Its unique 3.7m R conduction resistance RD (on) design ensures extremely low power consumption even under high currents, improving system efficiency. Widely used in power conversion, battery management systems, and high current load switching scenarios, it is your ideal choice for achieving high-power and high-efficiency semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[SH8K26(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sh8k26-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:11:41</pubDate>
	<description><![CDATA[SH8K26 is a high-performance N+N channel MOSFET designed for compact electronic products in a miniaturized SOP-8 package. The device provides a rated voltage of 40V VDSS and has a continuous current ID capability of 12A, demonstrating strong power control performance. Its conduction resistance RD (on) is as low as 16m R, effectively reducing system power consumption and enhancing overall energy efficiency. SH8K26 is widely used in power conversion, load switch control, and medium current drive applications, making it an ideal semiconductor device for building efficient and energy-saving circuits.]]></description>
</item>
<item>
	<title><![CDATA[Si4288DY(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4288dy-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:11:29</pubDate>
	<description><![CDATA[Si4288DY is a high-performance N+N channel MOSFET designed specifically for modern high integration electronics, using an economical and practical SOP-8 packaging. The device has a rated voltage of 40V VDSS and can withstand a continuous current ID of 12A, demonstrating strong power processing capabilities. The conduction resistance RD (on) is only 16m R, effectively reducing system power consumption and improving overall energy efficiency performance. Si4288DY is suitable for multiple application scenarios such as power conversion, load switch control, and medium current drive, making it the ideal semiconductor device choice for building efficient and energy-saving circuits.]]></description>
</item>
<item>
	<title><![CDATA[NTMD5838NL(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntmd5838nl-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:11:16</pubDate>
	<description><![CDATA[NTMD5838NL is a high-performance N+N channel MOSFET designed for modern high integration circuits in a compact SOP-8 package. This device provides a rated voltage of 40V VDSS and supports a continuous current ID of 12A, demonstrating excellent current carrying capacity. Its conduction resistance RD (on) is only 16m R, which helps to minimize power consumption and improve system energy efficiency. Widely suitable for power conversion, load switch control, and medium current driving, NTMD5838NL is the ideal semiconductor component for achieving efficient and reliable circuit design.]]></description>
</item>
<item>
	<title><![CDATA[SM4840PRL(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm4840prl-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:11:04</pubDate>
	<description><![CDATA[SM4840PRL is an efficient N+N channel MOSFET designed for modern high integration circuits in a compact SOP-8 package. This device has a rated voltage of 40V VDSS and a powerful continuous current ID capability of 12A, demonstrating excellent power processing performance. Its 16m R conduction resistance RD (on) design ensures significant energy consumption reduction and overall system energy efficiency improvement in working conditions. SM4840PRL is suitable for various applications such as power conversion, load switch control, and medium current drive, making it the ideal semiconductor component choice for creating efficient and energy-saving electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[DMN4034SSD(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn4034ssd-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:10:51</pubDate>
	<description><![CDATA[DMN4034SSD is a high-performance N+N channel MOSFET, packaged in a miniaturized SOP-8 package, suitable for integration in compact electronic designs. This device has a rated voltage of 40V VDSS and a continuous current ID capability of 12A, demonstrating excellent current processing performance. Its conduction resistance RD (on) is as low as 16m R, ensuring reduced power consumption and improved system efficiency during use. DMN4034SSD is suitable for diverse application scenarios such as power conversion, load switch control, and medium current drive, making it an ideal semiconductor component for designing efficient and energy-saving circuit solutions.]]></description>
</item>
<item>
	<title><![CDATA[FDS8949(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds8949-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:10:39</pubDate>
	<description><![CDATA[FDS8949 is a high-performance N+N channel MOSFET designed for high efficiency and high integration in a compact SOP-8 package. This device provides a rated voltage of 40V VDSS and can withstand 12A continuous current ID, demonstrating strong power processing performance. Its conduction resistance RD (on) is only 16m R, effectively reducing system energy consumption and improving overall energy efficiency. FDS8949 is suitable for various application environments such as power conversion, load switch control, and medium current drive, and is an ideal semiconductor device for achieving low loss and high efficiency circuit design.]]></description>
</item>
<item>
	<title><![CDATA[DMN4031SSD(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn4031ssd-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:10:27</pubDate>
	<description><![CDATA[DMN4031SSD is a high-performance N+N channel MOSFET designed specifically for high integration circuits, utilizing a space saving SOP-8 package. This device has a rated voltage of 40V VDSS and a maximum continuous current ID of 12A, demonstrating excellent power processing capabilities. Among them, the conduction resistance RD (on) is as low as 16m R, which helps to reduce system energy consumption and improve overall efficiency. Suitable for power conversion, load switching control, and medium current drive applications, DMN4031SSD is the ideal semiconductor component choice for building efficient and reliable circuits.]]></description>
</item>
<item>
	<title><![CDATA[SI4904DY-T1-E3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4904dy-t1-e3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:10:15</pubDate>
	<description><![CDATA[SI4904DY-T1-E3 is a high-quality N+N channel MOSFET, packaged in standard SOP-8 packaging, suitable for a wide range of electronic device integration. The device has a rated voltage VDSS of up to 40V and can withstand a continuous current ID of 12A, reflecting its powerful current processing performance. Especially outstanding is that its conduction resistance RD (on) is only 16m R, effectively reducing power loss and enhancing system energy efficiency. Suitable for applications such as power conversion, load switching, and medium current drive, SI4904DY-T1-E3 is the ideal semiconductor component for achieving high efficiency and low power circuit design.]]></description>
</item>
<item>
	<title><![CDATA[DMN4026SSD(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn4026ssd-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:10:03</pubDate>
	<description><![CDATA[DMN4026SSD is a high-performance N+N channel MOSFET designed for high-performance electronic devices in a compact SOP-8 package. This device provides a rated voltage of 40V VDSS and a maximum continuous current ID of 12A, demonstrating excellent power control capabilities. Its conduction resistance RD (on) is only 16m R, which helps to significantly reduce system power consumption and improve overall energy efficiency. Suitable for applications such as power conversion, load switch control, and medium current drive, DMN4026SSD is the ideal semiconductor component for achieving efficient and reliable circuit design.]]></description>
</item>
<item>
	<title><![CDATA[SM3012T9RL(TO-252-4L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm3012t9rl-to-252-4l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:09:50</pubDate>
	<description><![CDATA[SM3012T9RL is an N+P channel MOSFET, packaged in TO-252-4L with excellent heat dissipation, suitable for medium to high current applications. This device has a rated voltage of 30V VDSS and can safely carry a continuous current ID of 20A, highlighting its powerful power processing capability. Its conduction resistance RD (on) is as low as 18m R, which helps to reduce system power consumption and improve energy efficiency performance. Widely used in power conversion, inverters, and motor drive systems, SM3012T9RL is the ideal semiconductor component for achieving efficient and reliable control.]]></description>
</item>
<item>
	<title><![CDATA[NVD5863NL(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvd5863nl-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:09:38</pubDate>
	<description><![CDATA[NVD5863NL is a high-performance N-channel MOSFET designed specifically for handling high currents, using a TO-252-2L package with good heat dissipation. This device has a high voltage withstand VDSS of 60V and can withstand continuous current ID of up to 80A, demonstrating its excellent power processing ability. Its conduction resistance RD (on) is as low as 6m R, greatly reducing electrical energy loss and improving overall energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[PSMN7R6-60BS(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/psmn7r6-60bs-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:09:26</pubDate>
	<description><![CDATA[PSMN7R6-60BS is a high-performance N-channel MOSFET designed for high current applications using an efficient heat dissipation package TO-252-2L. The device has a high rated voltage of 60V VDSS and an amazing 80A continuous current ID carrying capacity, fully demonstrating excellent power processing performance. Especially outstanding is its ultra-low conduction resistance RD (on) of only 6m R, ensuring that it can still effectively reduce power consumption and improve system energy efficiency in high current environments.]]></description>
</item>
<item>
	<title><![CDATA[AO3418(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3418-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:09:13</pubDate>
	<description><![CDATA[AO3418 is a high-performance N-channel MOSFET designed with a miniaturized SOT-23-3L package, specifically for efficient and space saving circuit design. This device provides a rated voltage of 30V VDSS and a continuous current ID of up to 5.8A, ensuring strong power processing capabilities. The conduction resistance RD (on) is as low as 24m R, effectively reducing system power consumption and improving overall circuit efficiency. Widely suitable for power conversion, load switching control, and low-voltage motor drive scenarios, AO3418 is one of the ideal semiconductor components for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[AO3434A(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3434a-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:09:01</pubDate>
	<description><![CDATA[AO3434A is an N-channel MOSFET that features a sophisticated SOT-23-3L package, making it particularly suitable for integration in compact electronic devices. This device has a rated voltage of 30V VDSS and a continuous current ID of up to 5.8A, demonstrating strong current carrying capacity and reliability. Its conduction resistance RD (on) design, as low as 24m R, aims to minimize power loss and improve overall energy efficiency, making it an ideal choice for applications such as power conversion, load switching, and low-voltage motor drive. With outstanding performance and compact packaging design, AO3434A becomes the ideal semiconductor component for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[FDD8647L(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdd8647l-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:08:49</pubDate>
	<description><![CDATA[FDD8647L is a high-performance N-channel MOSFET designed for high current applications, using an efficient heat dissipation package TO-252-2L. The device has a high rated voltage VDSS of 40V and can support continuous current ID of up to 60A, demonstrating its excellent power processing capability. The highlight lies in its ultra-low conduction resistance RD (on) of only 7.7m R, greatly improving circuit energy efficiency and effectively reducing power consumption. FDD8647L is undoubtedly an ideal semiconductor component for high efficiency and high current applications in fields such as power conversion and motor control.]]></description>
</item>
<item>
	<title><![CDATA[DMN4026SK3(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn4026sk3-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:08:36</pubDate>
	<description><![CDATA[DMN4026SK3 is a professional N-channel MOSFET, packaged in TO-252-2L, designed for high-power applications and excellent heat dissipation. The core advantage of this device lies in its powerful electrical parameters, rated voltage VDSS up to 40V, continuous current ID capable of carrying up to 30A, and excellent current processing ability. At the same time, the conduction resistance RD (on) is as low as 18m R, effectively reducing system energy consumption and improving overall work efficiency. Whether it‘s power conversion, motor drive, or other high current application scenarios, DMN4026SK3 is your high-quality semiconductor solution.]]></description>
</item>
<item>
	<title><![CDATA[FDD8451(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdd8451-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:08:24</pubDate>
	<description><![CDATA[FDD8451 is a high-power N-channel MOSFET, packaged in a stable and well cooled TO-252-2L package, suitable for high current applications. It has a high rated voltage VDSS of 40V and an amazing 30A continuous current ID capability, fully demonstrating excellent power processing efficiency. In addition, the low conduction resistance RD (on) design of 18m R further reduces power loss and significantly improves system operating efficiency, making it an ideal semiconductor solution for high-end power conversion, motor drive, and other fields.]]></description>
</item>
<item>
	<title><![CDATA[Si2342DS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2342ds-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:08:12</pubDate>
	<description><![CDATA[Si2342DS-T1-GE3 is a high-quality N-channel MOSFET packaged in a space saving SOT-23 package, particularly suitable for modern compact circuit design needs. Its key features include a rated voltage VDSS of up to 20V, the ability to withstand continuous currents of up to 7A, and the ability to demonstrate strong electrical driving capabilities. It is worth mentioning that the conduction resistance RD (on) of the device is as low as 15m R, ensuring extremely low energy loss and efficient energy efficiency performance under working conditions. It is an excellent choice for optimizing system performance and improving energy utilization efficiency.]]></description>
</item>
<item>
	<title><![CDATA[PMV16XNR(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/pmv16xnr-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:07:59</pubDate>
	<description><![CDATA[This N-channel MOSFET model, PMV16XNR, is packaged in a compact and durable SOT-23 package, suitable for various precision electronic devices. Its core parameters are excellent, with a rated voltage VDSS of up to 20V and a continuous current ID of up to 7A, ensuring excellent power processing capabilities. And its conduction resistance RD (on), as low as 15m R, effectively reduces power loss and improves system energy efficiency, making it an ideal choice for building efficient circuits.]]></description>
</item>
<item>
	<title><![CDATA[IRLML6244PBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml6244pbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:07:47</pubDate>
	<description><![CDATA[IRLML6244PBF is an N-channel MOSFET designed in a compact SOT-23 package, suitable for space limited circuit designs. At a maximum operating voltage of 20V, the device can withstand up to 7A continuous current and provide excellent 15m R on resistance, achieving efficient and low loss power conversion. Widely used in various applications such as power management, motor drives, switch regulators, etc., it is an ideal choice for creating high-performance and energy-saving electronic products.]]></description>
</item>
<item>
	<title><![CDATA[DMG3414U(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg3414u-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:07:35</pubDate>
	<description><![CDATA[The DMG3414U N-channel MOSFET adopts a small SOT-23 package, providing an ideal solution for modern compact electronic design. This device can operate stably at a maximum working voltage of 20V, support continuous currents of up to 7A, and is equipped with an excellent 15m R conducting resistor to ensure high efficiency and low power consumption. Widely used in power management, high-speed switching circuits, motor drive systems, and other fields, it is your preferred device for pursuing high-performance and energy-saving design.]]></description>
</item>
<item>
	<title><![CDATA[FDD6685(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdd6685-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:07:23</pubDate>
	<description><![CDATA[This field-effect transistor is P-type, with a current of 50A, and can carry high power. The voltage is 30V, suitable for various common circuit environments. The typical internal resistance value is 15mR, which can control energy loss to a certain extent. VGS is 20V. In the field of consumer electronics, it can meet the current and voltage requirements of specific electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SIR401DP-T1-GE3(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sir401dp-t1-ge3-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:07:10</pubDate>
	<description><![CDATA[The SIR401DP-T1-GE3 P-channel MOSFET adopts a compact DFN5X6-8L package, which has excellent heat dissipation performance and circuit board space utilization. This device can operate stably at 18V voltage, providing a continuous current of up to 80A, and has an ultra-low 3.4m R conduction resistance, ensuring efficient and low loss power transmission. Widely used in high current power conversion, electric vehicle charging systems, and other occasions, it is an ideal component for high-performance and energy-saving design.]]></description>
</item>
<item>
	<title><![CDATA[SI7635DP-T1-GE3(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7635dp-t1-ge3-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:06:58</pubDate>
	<description><![CDATA[SI7635DP-T1-GE3 is a high-performance P-channel MOSFET, packaged in a compact DFN5X6-8L package to optimize heat dissipation performance and PCB footprint. The device can operate stably at a voltage of 18V, providing a strong 80A continuous current, and the ultra-low on resistance of 3.4m R ensures excellent energy efficiency performance. Widely used in high current switching and conversion scenarios in power supply systems and other fields, it is an ideal solution for achieving efficient power management.]]></description>
</item>
<item>
	<title><![CDATA[FDMC6686P(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdmc6686p-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:06:46</pubDate>
	<description><![CDATA[The FDMC6686P P-channel MOSFET adopts advanced DFN5X6-8L packaging, with compact size and excellent thermal performance. This device can provide a continuous current of up to 80A at a maximum operating voltage of 18V, and has an industry-leading 3.4m R ultra-low on resistance, effectively reducing power consumption and improving system efficiency. Widely used in fields such as high current power conversion and motor drive, it is an ideal choice for high-power applications.]]></description>
</item>
<item>
	<title><![CDATA[FDV301N(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdv301n-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:06:33</pubDate>
	<description><![CDATA[FDV301N N-channel MOSFET is designed with a compact SOT-23 package, specifically for precision electronic design. Stable operation at a rated voltage of 30V, providing precise current control capability up to 0.1A, with a 1200mR conducting resistance, particularly suitable for low-power, low current application environments. Widely used in power management, signal switching, protection circuits and other fields, it is an ideal component for your pursuit of efficient and energy-saving circuit solutions.]]></description>
</item>
<item>
	<title><![CDATA[DMN63D8L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn63d8l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:06:21</pubDate>
	<description><![CDATA[DMN63D8L is an N-channel MOSFET that uses a small SOT-23 package, making it particularly suitable for circuit board designs with limited space. The device operates at a voltage of up to 30V, provides precise 0.1A current control, and has a 1200mR conducting resistance, making it suitable for low-power applications. Widely used in electronic switches, overcurrent protection, logic level conversion and other functional modules, it is an ideal choice for achieving precise current management and energy-saving design.]]></description>
</item>
<item>
	<title><![CDATA[DMG301NU(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg301nu-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:06:09</pubDate>
	<description><![CDATA[The DMG301NU N-channel MOSFET adopts a miniature SOT-23 package, which is suitable for various compact circuit designs in space. This device can operate stably at a maximum operating voltage of 30V, providing a continuous current of 0.1A, and its conduction resistance is 1200mR, making it particularly suitable for low-power and low current control situations. Commonly used in logic gate switches, power line protection, and other electronic devices that require precise current control, it is an ideal component for your microelectronic system design.]]></description>
</item>
<item>
	<title><![CDATA[Si4532CDY(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4532cdy-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:05:56</pubDate>
	<description><![CDATA[Si4532CDY is an N+P channel MOSFET, packaged in SOP-8, with a compact size and powerful functionality. The device can operate stably at a voltage of 30V, with a continuous current carrying capacity of up to 7A, and an extremely low conducting resistance of 15m R, ensuring efficient and low loss energy conversion. Widely used in power management, motor drives, load switches, etc., it is an ideal component for achieving high-performance and energy-saving electronic system design.]]></description>
</item>
<item>
	<title><![CDATA[STC4606(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/stc4606-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:05:44</pubDate>
	<description><![CDATA[The STC4606 N+P channel MOSFET adopts a compact SOP-8 package, suitable for high-density installation needs of modern electronic devices. This device supports a maximum operating voltage of 30V, has excellent 7A continuous current carrying capacity, and has a conductivity resistance as low as 15m R, greatly enhancing system efficiency and reducing energy consumption. Widely used in power conversion, motor drive, high-frequency switch circuit design and other scenarios, it is the preferred device for creating high-performance and energy-saving electronic products.]]></description>
</item>
<item>
	<title><![CDATA[IRF9389PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf9389pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:05:32</pubDate>
	<description><![CDATA[IRF9389PBF is an N+P channel MOSFET, packaged in SOP-8 format, which is highly favored for its high integration and excellent heat dissipation. The device operates at a voltage of up to 30V and can withstand continuous currents of up to 7A. It has an ultra-low on resistance of only 15m R, ensuring efficient and low loss operation. Widely used in power conversion, motor drive, high current switching circuits and other fields, it is a reliable choice for designing high-performance and energy-saving electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[AO4630(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4630-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:05:20</pubDate>
	<description><![CDATA[AO4630 N+P channel MOSFET adopts SOP-8 packaging, which has good compatibility and heat dissipation performance. This device is capable of stable operation at a rated voltage of 30V, providing strong 7A continuous current driving capability, and exhibiting excellent 15m R on resistance, effectively ensuring efficient system operation and low energy consumption. Widely used in power management, motor drives, load switches, and other applications, it is an ideal choice to improve the performance and energy efficiency of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[AO4616(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4616-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:05:07</pubDate>
	<description><![CDATA[The AO4616 N+P channel MOSFET adopts standard SOP-8 packaging, with a compact structure that is suitable for various application scenarios. The device supports a maximum operating voltage of 30V, can withstand continuous currents of up to 7A, and has an extremely low 15m R conduction resistance, ensuring efficient and low loss power transmission. Widely used in circuit design such as DC/DC conversion, motor drive, power switch, etc., it is the core component for engineers to build high-performance and energy-saving electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[FDMC8554(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdmc8554-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:04:55</pubDate>
	<description><![CDATA[The FDMC8554 MOSFET adopts an N-channel structure, paired with cutting-edge DFN3X3-8L packaging, which is compact and efficient. This device has a working voltage of 20V VDSS and can withstand continuous current IDs of up to 60A, demonstrating excellent current transfer capability. Its highlight lies in its extremely low on resistance of only 4mR, which helps to reduce power consumption and improve system energy efficiency. Suitable for high-power density power conversion and high current drive applications, it is your high-quality choice for building high-performance electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[SIS410DN-T1-GE3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sis410dn-t1-ge3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:04:43</pubDate>
	<description><![CDATA[SIS410DN-T1-GE3 MOSFET is a high-performance N-channel semiconductor module that uses advanced DFN3X3-8L packaging technology, with small size and strong performance. Its characteristic lies in its maximum withstand voltage of 20V VDSS, which can withstand continuous current ID of up to 60A, and its ultra-low on resistance of only 4mR makes it stand out among similar products, greatly improving power conversion efficiency and overall system performance. This product is widely suitable for high voltage and high current application scenarios, such as power management, motor drive, etc. It is your ideal choice for achieving high-performance circuit design.]]></description>
</item>
<item>
	<title><![CDATA[SI7108DN-T1-GE3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7108dn-t1-ge3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:04:31</pubDate>
	<description><![CDATA[SI7108DN-T1-GE3 MOSFET adopts industry-leading N-channel design, compact and efficient packaging - DFN3X3-8L specification, especially suitable for precision circuits with limited space. This device has a stable operating voltage of 20V VDSS and a maximum continuous current of 60A, demonstrating excellent current processing capabilities. Especially outstanding is its ultra-low conduction resistance of only 4mR, aimed at improving system energy efficiency and reducing losses. This MOSFET is suitable for high-power density applications, including but not limited to power converters, high current switch controllers, etc. It is an essential component for pursuing high-performance electronic products.]]></description>
</item>
<item>
	<title><![CDATA[DMN2005UFG(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn2005ufg-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:04:18</pubDate>
	<description><![CDATA[DMN2005UFG MOSFET, carefully selected N-channel technology, packaged with exquisite DFN3X3-8L, designed specifically for precision electronic equipment. Having a voltage tolerance of 20V and a peak current of 60A, VDSS demonstrates excellent power processing performance. Its conduction resistance is only 4mR, greatly improving energy utilization and system efficiency, making it an ideal choice for high-power density applications. It is widely used in power conversion, fast switch control and other fields, injecting surging power into your electronic products.]]></description>
</item>
<item>
	<title><![CDATA[TPCC8093(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/tpcc8093-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:04:06</pubDate>
	<description><![CDATA[TPCC8093 MOSFET is an efficient N-channel device, packaged in a compact DFN3X3-8L package, suitable for space limited application environments. This MOSFET has a high voltage withstand value of 20V VDSS, which is powerful enough to carry 60A continuous current ID. Its excellent conduction resistance is as low as 4mR, significantly improving power conversion efficiency and reducing energy consumption. Suitable for various high current demand situations, such as power management, motor drives, etc., it is an ideal choice for modern electronic devices, helping your circuit design achieve efficient and stable operation.]]></description>
</item>
<item>
	<title><![CDATA[SI7106DN-T1-E3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7106dn-t1-e3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:03:54</pubDate>
	<description><![CDATA[SI7106DN-T1-E3 MOSFET is a high-performance N-channel semiconductor device that uses miniaturized DFN3X3-8L packaging technology and has strong power processing capabilities. Its characteristics are a 20V VDSS withstand voltage value and an amazing 60A continuous current ID. Particularly noteworthy is its ultra-low conduction resistance of only 4mR, effectively reducing losses and improving overall efficiency. This MOSFET is very suitable for applications in demanding power conversion, high current switch control, and other scenarios, bringing you an unprecedented energy efficiency experience.]]></description>
</item>
<item>
	<title><![CDATA[SIS412DN-T1-GE3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sis412dn-t1-ge3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:03:41</pubDate>
	<description><![CDATA[The SIS412DN-T1-GE3 MOS transistor provides excellent performance in a compact DFN3X3-8L package. This device is designed with N-channel and has a stable operating voltage of 30V VDSS and excellent current carrying capacity of 20A. Its conduction resistance is as low as 15mR, ensuring excellent efficiency performance in high-power conversion. Suitable for various high-end power control, motor drive and other fields, it is your ideal semiconductor solution for system optimization.]]></description>
</item>
<item>
	<title><![CDATA[FDMC8884(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdmc8884-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:03:29</pubDate>
	<description><![CDATA[Strongly recommend the MOS tube FDMC8884, which adopts advanced DFN3X3-8L packaging technology, compact and efficient. As a high-performance N-channel device, it has a rated voltage of 30V VDSS and a continuous current ID capability of up to 20A. Its excellent conduction resistance is only 15m R, ensuring lower power consumption and higher energy efficiency conversion rate. It is the ideal choice for your power management, motor drive and other applications.]]></description>
</item>
<item>
	<title><![CDATA[DMG7408SFG(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg7408sfg-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:03:17</pubDate>
	<description><![CDATA[DMG7408SFG is an N-channel MOSFET, packaged in an ultra-thin DFN3X3-8L package, with excellent heat dissipation performance and space utilization. At a maximum drain source voltage of 30V (VDSS), it can continuously provide a drain current (ID) of up to 20A, suitable for high current applications. Its excellent 15m R on resistance design effectively improves system energy efficiency and reduces power consumption. Widely used in electronic products such as power management, motor drives, and battery protection, it is an ideal semiconductor component with high integration and performance.]]></description>
</item>
<item>
	<title><![CDATA[AON7408(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon7408-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:03:05</pubDate>
	<description><![CDATA[AON7408 is an N-channel MOSFET, packaged in a miniaturized DFN3X3-8L package, with excellent integration and heat dissipation performance. Under the condition of a maximum drain source voltage (VDSS) of 30V, it can stably transmit a drain current (ID) of up to 20A, making it particularly suitable for applications that require high current processing capabilities. The low conductivity resistance of 15m R makes the device operate more efficiently and energy-efficient. Widely used in power conversion, load switching, battery management systems and other fields, it is an ideal choice for highly integrated and high-performance electronic design solutions.]]></description>
</item>
<item>
	<title><![CDATA[SIS414DN-T1-GE3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sis414dn-t1-ge3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:02:52</pubDate>
	<description><![CDATA[SIS414DN-T1-GE3 is an N-channel MOSFET designed specifically for high-density electronics in a compact DFN3X3-8L package. At a maximum drain source voltage of 30V (VDSS), it can withstand a continuous drain current (ID) of up to 20A, meeting the requirements of high current applications. Its prominent 15m R conducting resistance effectively improves system efficiency and reduces power consumption. Widely used in circuit design for power management, motor drive, battery protection, etc., it is an ideal choice for high-performance, low resistance solutions.]]></description>
</item>
<item>
	<title><![CDATA[AON3414(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon3414-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:02:40</pubDate>
	<description><![CDATA[AON3414 is an N-channel MOSFET packaged in advanced DFN3X3-8L, with excellent space utilization and heat dissipation performance. At a maximum drain source voltage of 30V (VDSS), a continuous drain current (ID) of up to 20A can be achieved, especially suitable for situations that require high current processing capabilities. Its excellent 15m R conducting resistance ensures high efficiency and low consumption of system operation. Widely used in power conversion, battery management systems, and other fields that require high-performance MOSFETs.]]></description>
</item>
<item>
	<title><![CDATA[SQ2362ES-T1_GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sq2362es-t1_ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:02:28</pubDate>
	<description><![CDATA[SQ2362ES-T1_GE3 is an N-channel MOSFET designed for compact and portable electronic devices in a miniaturized SOT-23 package. The device can provide a stable 5A drain current (ID) at a maximum drain source voltage (VDSS) of 60V, making it particularly suitable for applications with certain requirements for space and power. Its conduction resistance is only 42m R, which helps to improve system energy efficiency and reduce energy consumption. Widely used in small circuits such as power converters and load switches, it is an ideal choice for high integration and high-performance electronic design.]]></description>
</item>
<item>
	<title><![CDATA[NTD3055L104(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntd3055l104-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:02:16</pubDate>
	<description><![CDATA[NTD3055L104 is an N-channel MOSFET designed in a compact TO-252-2L package, suitable for space sensitive and high-power applications. The device can withstand a continuous drain current (ID) of up to 20A at a maximum drain source voltage (VDSS) of 60V, ensuring strong current processing capability. Its low conductivity resistance of 27m R helps achieve high efficiency and low loss, and is widely used in circuit design such as power conversion and motor drive. It is a high-quality semiconductor component for building high-performance electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[NTD3055-150(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntd3055-150-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:02:02</pubDate>
	<description><![CDATA[NTD3055-150 is a high-performance N-channel MOSFET, packaged in TO-252-2L, with excellent heat dissipation performance and space saving design. At a maximum drain source voltage (VDSS) of 60V, it can stably transmit a drain current (ID) of 20A, suitable for high voltage and high current application scenarios. The low conductivity resistance of 27m R effectively improves the overall system energy efficiency and reduces power consumption. Widely used in various fields such as power conversion and motor drive, it is an ideal semiconductor component for engineers to build efficient and energy-saving circuits.]]></description>
</item>
<item>
	<title><![CDATA[NTD2955(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntd2955-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:01:50</pubDate>
	<description><![CDATA[NTD2955 is a high-performance P-channel MOSFET packaged in TO-252-2L, designed specifically for high power density and high-efficiency electronic devices. Having a maximum withstand voltage of 60V (VDSS), capable of carrying up to 10A continuous current (ID), and conducting a resistance of only 125mR (RD (on)) under normal conditions, effectively reducing power loss and enhancing system energy efficiency. This MOSFET has a compact structure and superior performance, making it an ideal choice for power switches, converters, and various medium and low voltage circuits.]]></description>
</item>
<item>
	<title><![CDATA[NTD20P06L(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntd20p06l-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:01:38</pubDate>
	<description><![CDATA[NTD20P06L is a P-channel MOSFET designed for efficient power management solutions in a TO-252-2L package. This device has strong withstand voltage performance, with a VDSS of up to 60V, capable of carrying a maximum continuous current of ID10A, and excellent low on resistance characteristics. The RD (on) is only 125mR, significantly reducing energy loss and optimizing system efficiency. This MOSFET ensures stable operation while meeting compact design requirements, making it an ideal choice for various power control and switching applications.]]></description>
</item>
<item>
	<title><![CDATA[NTD20N06L(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntd20n06l-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:01:26</pubDate>
	<description><![CDATA[The NTD20N06L N-channel MOSFET adopts a miniaturized TO-252-2L package, which is suitable for design needs with limited space. Its key features include a maximum drain source voltage of 60V (VDSS) and a powerful continuous drain current of 20A (ID), ensuring excellent performance under high voltage and high current conditions. More noteworthy is that the conduction resistance is only 27m R, which greatly improves system energy efficiency and reduces heat loss. This MOSFET is widely used in various applications such as power conversion and motor control, and is the preferred electronic component with high cost-effectiveness and reliable performance.]]></description>
</item>
<item>
	<title><![CDATA[NTD20N06(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntd20n06-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:01:13</pubDate>
	<description><![CDATA[The NTD20N06 N-channel MOSFET adopts a compact and efficient TO-252-2L package, which is suitable for the miniaturization needs of modern electronic devices. This device can continuously provide a drain current (ID) of 20A at a maximum drain source voltage (VDSS) of 60V, demonstrating excellent high current processing capability. Its conduction resistance RD (on) is as low as 27m R, greatly improving the power conversion efficiency and reducing unnecessary energy loss. Widely used in fields such as switching power supplies and motor drives, it is a high-performance and cost-effective semiconductor solution.]]></description>
</item>
<item>
	<title><![CDATA[NTD18N06L(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntd18n06l-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:01:01</pubDate>
	<description><![CDATA[NTD18N06L is a high-performance N-channel MOSFET designed for high-density, high-performance electronics in a compact TO-252-2L package. This device can stably carry a drain current (ID) of 20A at a maximum drain source voltage (VDSS) of 60V, suitable for high voltage and high current conditions. Its low conduction resistance of 27m R helps to improve system efficiency and reduce energy consumption. Widely used in power conversion, motor drive and other fields, it is an important component for building efficient and reliable electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[NDS332P(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nds332p-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:00:49</pubDate>
	<description><![CDATA[The NDS332P MOSFET adopts a compact SOT-23 packaging form, with a built-in P-channel structure and excellent performance. This device has a maximum drain source breakdown voltage of 20V (VDSS), which can operate stably within a safe voltage range, while providing a continuous drain current (ID) of up to 2.3A, ensuring strong driving capability. Of particular concern is its ultra-low conduction resistance RD (on) of only 120mR, which significantly reduces power loss and improves overall system efficiency. Suitable for circuit design such as power management and switch adjustment, it is your ideal choice for achieving efficient and efficient applications.]]></description>
</item>
<item>
	<title><![CDATA[MTD3055V(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/mtd3055v-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:00:35</pubDate>
	<description><![CDATA[MTD3055V is an N-channel MOSFET, packaged in TO-252-2L, with excellent heat dissipation performance and space utilization. At a maximum drain source voltage of 60V (VDSS), it can withstand continuous drain current (ID) of up to 20A, suitable for high-power and high current application scenarios. Its conduction resistance is only 27m R, which helps to improve the overall energy efficiency of the system and reduce power consumption. Widely used in power conversion, motor drive and other fields, it is an ideal semiconductor component for achieving efficient and energy-saving electronic device design.]]></description>
</item>
<item>
	<title><![CDATA[MDD1951RH(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/mdd1951rh-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:00:23</pubDate>
	<description><![CDATA[The MDD1951RH N-channel MOSFET is designed for high-power applications in a sturdy and durable TO-252-2L package. This device has a maximum drain source voltage of 60V (VDSS) and excellent 20A continuous drain current (ID), with strong and stable performance. Its conduction resistance is as low as 27m R, which helps to reduce energy loss and improve overall system efficiency. This product is widely used in fields such as switching power supplies and motor drives, and is an indispensable high-performance MOSFET component in high-end electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRLR120NPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlr120npbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-24 12:00:11</pubDate>
	<description><![CDATA[IRLR120NPBF N-channel MOSFET, packaged in TO-252-2L, designed specifically for medium current applications in 100V high voltage environments. The device has the ability to withstand a drain source voltage (VDSS) of up to 100V and a continuous drain current (ID) of 15A, ensuring stable operation in high voltage systems. The conduction resistance RD (on) is 100mR, although the resistance is slightly higher, it can still provide reliable power conversion performance under moderate current conditions. Suitable for scenarios such as power conversion, motor control, and battery management systems, it is an ideal choice for seeking cost-effective solutions.]]></description>
</item>
<item>
	<title><![CDATA[IRLR024NPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlr024npbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:59:58</pubDate>
	<description><![CDATA[IRLR024NPBF is a high-performance N-channel MOSFET, packaged in industry standard TO-252-2L, with a compact structure and good heat dissipation. The highlight of this device lies in its maximum drain source voltage (VDSS) of 60V and continuous drain current (ID) of 20A, which can effectively cope with high-voltage and high current application scenarios. Its conduction resistance is as low as 27m R, significantly improving system energy efficiency and reducing power consumption. Widely used in circuit design such as power conversion and motor drive, it is the preferred component for high-power and high-efficiency electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRLR014TRPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlr014trpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:59:46</pubDate>
	<description><![CDATA[IRLR014TRPBF is an N-channel MOSFET, packaged in TO-252-2L, suitable for various electronic designs due to its compact and efficient advantages. This device can stably provide a drain current (ID) of 20A at a maximum drain source voltage (VDSS) of 60V, suitable for high voltage and high current scenarios. The conduction resistance is as low as 27m R, effectively improving system energy efficiency and reducing power consumption. Widely used in industries such as power conversion and motor drive, it is an ideal semiconductor device for creating high-performance and low loss electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[IRLML6302PBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml6302pbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:59:34</pubDate>
	<description><![CDATA[This IRLML6302PBF MOS transistor adopts advanced P-channel technology and is packaged in a compact and durable SOT-23 form. It has excellent electrical performance, with a working voltage of up to 20V, a continuous current of up to 2.3A, and a conduction resistance as low as 95m R, ensuring efficient energy conversion and transmission. Suitable for various power management, motor drive and other application scenarios, it is the ideal choice for your circuit design, combining high performance and reliability.]]></description>
</item>
<item>
	<title><![CDATA[IRLML2246PBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml2246pbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:59:22</pubDate>
	<description><![CDATA[IRLML2246PBF is a high-performance P-channel MOSFET designed for high-density and low-power applications in a compact SOT-23 package. Its main characteristics include a maximum withstand voltage VDSS of 20V, providing continuous drain current of up to 2.3A, and demonstrating excellent current processing performance. In addition, the device has a low conduction resistance RD (on) of 95mR, effectively reducing power loss and enhancing system energy efficiency. This MOSFET is widely used in power management, load switching, portable electronic devices, and other fields due to its fast switching speed, low on resistance, and high stability. It is your ideal semiconductor component choice.]]></description>
</item>
<item>
	<title><![CDATA[IRFR9020TRPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr9020trpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:59:09</pubDate>
	<description><![CDATA[IRFR9020TRPBF is a high-performance P-channel MOSFET, packaged in TO-252-2L, suitable for power conversion, motor control, and other high-efficiency circuit designs. This device has a rated voltage of 60V VDSS, capable of carrying up to 10A continuous current, and exhibits an extremely low conduction resistance RD (on) -125mR, thereby minimizing power loss and improving overall system efficiency. Thanks to its excellent electrical specifications and reliable performance, IRFR9020TRPBF is an ideal semiconductor component choice for medium and low voltage applications.]]></description>
</item>
<item>
	<title><![CDATA[IRFR9014TRPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr9014trpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:58:58</pubDate>
	<description><![CDATA[IRFR9014TRPBF is a P-channel MOSFET designed for high efficiency and low loss circuits using TO-252-2L packaging. Its characteristic is that it has the highest voltage withstand level VDSS of 60V, which can safely carry up to 10A continuous DC current, and the conduction resistance is only 125mR (RD (on)), ensuring low power consumption performance under high current operation. This MOSFET is suitable for various application scenarios such as power conversion and motor drive. With excellent electrical performance and reliable packaging technology, it has become an ideal choice for modern electronic design.]]></description>
</item>
<item>
	<title><![CDATA[IRFR120NPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr120npbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:58:44</pubDate>
	<description><![CDATA[IRFR120NPBF N-channel MOSFET, packaged in TO-252-2L, designed specifically for medium current, 100V high voltage applications. This device has a drain source withstand voltage (VDSS) of up to 100V and a continuous drain current (ID) of 15A, ensuring stable and reliable operation in high-voltage circuits. Although the conduction resistance RD (on) is 100mR, it still demonstrates high cost-effectiveness in areas such as power conversion, motor drive control, and battery management due to its excellent current carrying capacity and applicability. It is the preferred semiconductor component that engineers consider in their design to balance performance and cost.]]></description>
</item>
<item>
	<title><![CDATA[IRFR024NPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr024npbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:58:32</pubDate>
	<description><![CDATA[IRFR024NPBF is a high-performance N-channel MOSFET, packaged using the industry‘s popular TO-252-2L, with good heat dissipation performance and compact size. This device can withstand continuous drain current (ID) of up to 20A at a maximum drain source voltage (VDSS) of 60V, making it particularly suitable for high-voltage and high current applications. Its internal conduction resistance is only 27m R, effectively improving system efficiency and reducing power consumption. Widely used in electronic design such as power conversion and motor drive, it is your ideal choice for seeking efficient and reliable semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[IRFHM8329PBF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfhm8329pbf-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:58:20</pubDate>
	<description><![CDATA[The IRFHM8329PBF MOSFET adopts advanced DFN3X3-8L packaging technology and is an efficient N-channel MOSFET device. Its characteristics include a maximum leakage source voltage of 30V (VDSS) and a powerful 100A continuous current ID carrying capacity, demonstrating excellent power control performance. In addition, the device has an ultra-low conduction resistance RD (on) of only 4mR, aiming to significantly reduce energy consumption and improve system energy efficiency. It is particularly suitable for fields such as switch mode power supplies, motor drives, and battery management systems that require high power density and efficiency, providing a solid guarantee for your high-end electronic design.]]></description>
</item>
<item>
	<title><![CDATA[IRF8707PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf8707pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:58:08</pubDate>
	<description><![CDATA[IRF8707PBF is an N-channel MOSFET designed in a compact SOP-8 package for efficient power conversion, motor drive, and other application scenarios. This device has a maximum operating voltage of 30V VDSS, capable of carrying up to 15A of continuous current, and is equipped with the industry-leading low conductivity resistor RD (on), which is only 8mR, effectively reducing power loss and improving overall system efficiency. This MOSFET is an ideal choice for medium and low voltage switching circuits due to its excellent electrical performance and space saving packaging.]]></description>
</item>
<item>
	<title><![CDATA[IRF8707GPBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf8707gpbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:57:55</pubDate>
	<description><![CDATA[IRF8707GPBF is a high-performance N-channel MOSFET packaged in SOP-8, particularly suitable for efficient power conversion, motor drive and other applications. The device has a maximum operating voltage of 30V VDSS, can withstand continuous currents of up to 15A, and has an ultra-low on resistance RD (on) of only 8mR. While ensuring strong current processing capability, it greatly reduces power consumption and improves system energy efficiency. This MOSFET is an ideal choice for medium and low voltage switching circuits due to its excellent electrical performance and compact packaging design.]]></description>
</item>
<item>
	<title><![CDATA[IRF7805PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7805pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:57:43</pubDate>
	<description><![CDATA[IRF7805PBF is a high-performance N-channel MOSFET designed in a compact SOP-8 package for efficient power conversion and motor drive applications. The device has a maximum operating voltage of 30V, VDSS, and can withstand continuous currents of up to 15A. Its highlight is the ultra-low conduction resistance RD (on), which is only 8mR, significantly reducing power loss and improving the overall energy efficiency of the system. This MOSFET, with its excellent electrical performance and space optimized packaging, has become an ideal component for medium and low voltage switching circuits.]]></description>
</item>
<item>
	<title><![CDATA[HUF76609D3S(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/huf76609d3s-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:57:31</pubDate>
	<description><![CDATA[The HUF76609D3S N-channel MOSFET is packaged in TO-252-2L and is suitable for medium current applications in 100V high-voltage systems. This device provides a maximum drain source voltage (VDSS) of 100V and a continuous drain current (ID) of 15A, ensuring stable and efficient operation in high voltage environments. The conduction resistance RD (on) is 100mR, although it is not an ultra-low resistance value, it can still maintain a good performance ratio at the corresponding current level. Commonly used in scenarios such as switching power supplies, motor drives, and battery management, it is an ideal choice for seeking cost-effective semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[FQD7P06(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fqd7p06-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:57:18</pubDate>
	<description><![CDATA[FQD7P06 is a P-channel MOSFET packaged in TO-252-2L, designed specifically for high-performance power electronics applications. This device has a high rated voltage VDSS of 60V, which can stably handle 10A continuous current, and its conduction resistance RD (on) is as low as 125mR, effectively reducing power loss and improving the overall energy efficiency of the system. With excellent electrical parameters and reliable performance, FQD7P06 is widely used in power conversion, motor drive, and various medium and low voltage switch circuits, making it an indispensable ideal semiconductor component for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[IRF7413PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7413pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:57:06</pubDate>
	<description><![CDATA[The IRF7413PBF N-channel MOSFET adopts advanced SOP-8 packaging technology, which is compact and efficient. Its core parameters are excellent, with a maximum drain source voltage (VDSS) of 30V and a continuous drain current (ID) of up to 15A, ensuring strong power processing capabilities. The conduction resistance is only 8m R, effectively reducing power consumption and temperature rise, and optimizing system efficiency. Suitable for various high-density power conversion, motor drive and other circuit designs, it is your ideal choice for achieving high-performance electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[FDS6680AS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds6680as-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:56:53</pubDate>
	<description><![CDATA[FDS6680AS is an N-channel MOSFET designed with a compact SOP-8 package for high efficiency and low power applications. The device supports a working voltage of up to 30V VDSS and can provide a stable 15A drain current ID, demonstrating excellent current processing capabilities. Its highlight lies in its ultra-low conduction resistance RD (on) of only 8m R, effectively reducing power loss and improving system energy efficiency. Widely used in power conversion, load switching, motor drive and other fields, FDS6680AS MOSFETs are the ideal component for achieving high-performance and energy-saving circuits.]]></description>
</item>
<item>
	<title><![CDATA[AM9569DA(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/am9569da-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:56:41</pubDate>
	<description><![CDATA[This field-effect transistor is P-type, with a current of 25A, and can adapt to a certain power output. Voltage of 40V, capable of stable operation in various common circuit environments. The typical internal resistance value is 31mR, which helps to control energy loss. VGS is 20V. In the field of consumer electronics, it can meet the current and voltage requirements of specific electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[ZXMP4A16K(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zxmp4a16k-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:56:29</pubDate>
	<description><![CDATA[This field-effect transistor is P-type, with a current of 25A, which can meet certain power requirements. The voltage is 40V, suitable for various common circuit scenarios. The typical internal resistance value is 31mR, which can effectively control the degree of energy loss. VGS is 20V. In the field of consumer electronics, it can be used in electronic devices with specific requirements for current and voltage.]]></description>
</item>
<item>
	<title><![CDATA[DMP4047SK3(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp4047sk3-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:56:17</pubDate>
	<description><![CDATA[This field-effect transistor is P-type, with a current of 25A, and can carry large current loads. Voltage of 40V, able to adapt to various common circuit environments. The typical internal resistance value is 31mR, which to some extent controls energy loss. VGS is 20V. In the field of consumer electronics, it can meet the current and voltage requirements of specific electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[AO4614B(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4614b-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:56:04</pubDate>
	<description><![CDATA[AO4614B is an N+P channel MOSFET that adopts a miniaturized SOP-8 package to meet the miniaturization requirements of modern electronic products. The device has a maximum working voltage of 40V VDSS and can continuously output a drain current ID of 6A, ensuring efficient and stable power transmission. Its conduction resistance RD (on) is as low as 26m R, effectively reducing power consumption and improving system energy efficiency. AO4614B MOSFETs are widely used in power conversion, load switching, motor drive control and other fields, making them an ideal choice for achieving high efficiency and low loss circuit design.]]></description>
</item>
<item>
	<title><![CDATA[STL6P3LLH6(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/stl6p3llh6-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:54:02</pubDate>
	<description><![CDATA[STL6P3LLH6 is a high-performance P-channel MOSFET designed for high integration and energy efficiency, using a small DFN3X3-8L package. This device has a voltage rating of 30V VDSS and can support continuous drain current IDs up to 25A, ensuring strong and stable current processing capabilities. Its unique advantage lies in its ultra-low conduction resistance RD (on) of 16m R, which helps to significantly reduce system losses and improve overall energy efficiency. Widely used in power conversion, motor drive, battery management systems and other fields, STL6P3LLH6 MOSFETs are your ideal choice for building efficient and green electronic products.]]></description>
</item>
<item>
	<title><![CDATA[SI7619DN-T1-GE3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7619dn-t1-ge3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:53:50</pubDate>
	<description><![CDATA[SI7619DN-T1-GE3 is an efficient P-channel MOSFET designed in a compact DFN3X3-8L package to optimize space constrained designs. The device has a voltage rating of 30V VDSS and can withstand continuous drain current ID of up to 25A, demonstrating excellent power processing performance. Its characteristic lies in having a conduction resistance RD (on) as low as 16m R, effectively reducing power loss and improving energy efficiency. Widely used in power conversion, battery management systems, large motor drives, and other fields, SI7619DN-T1-GE3 MOSFETs are your ideal partner for pursuing high-performance and energy-saving design.]]></description>
</item>
<item>
	<title><![CDATA[SI7121DN-T1-GE3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7121dn-t1-ge3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:53:38</pubDate>
	<description><![CDATA[SI7121DN-T1-GE3 is a high-performance P-channel MOSFET designed for high power density applications in a compact DFN3X3-8L package. This device provides a rated voltage of 30V VDSS and a maximum continuous drain current of 25A, demonstrating excellent current processing capabilities. Especially outstanding is its conduction resistance RD (on) as low as 16m R, which significantly reduces power loss and improves energy utilization efficiency. Widely suitable for power converters, battery management systems, and high current motor drives, SI7121DN-T1-GE3 MOSFETs are the ideal choice for achieving efficient and reliable circuit design.]]></description>
</item>
<item>
	<title><![CDATA[STS7PF30L(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sts7pf30l-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:53:25</pubDate>
	<description><![CDATA[STS7PF30L is a high-performance P-channel MOSFET packaged in SOP-8, designed specifically for high voltage and high current applications. Its features include a voltage rating of up to 30V VDSS and a continuous drain current ID of up to 11A, fully demonstrating excellent power transmission capabilities. Of particular note, the conduction resistance RD (on) of the device is only 12.5m R, greatly optimizing power loss and improving system efficiency. Whether in power management, battery protection, or motor drive, STS7PF30L MOSFETs are the ideal choice for your circuit design due to their excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[STP4407(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/stp4407-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:53:13</pubDate>
	<description><![CDATA[STP4407 is an efficient P-channel MOSFET, packaged in a compact SOP-8 format, suitable for use in various precision electronic devices. The device can withstand a voltage of up to VDSS30V and can stably carry a continuous drain current of up to 11A, demonstrating excellent power processing performance. Its highlight lies in its ultra-low conduction resistance RD (on) of only 12.5m R, which significantly reduces energy loss and improves energy utilization efficiency. Whether it‘s power control, load switching, or motor drive applications, STP4407 MOSFETs will become your preferred design solution with their outstanding performance.]]></description>
</item>
<item>
	<title><![CDATA[SM4435PRL(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm4435prl-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:53:01</pubDate>
	<description><![CDATA[SM4435PRL is a high-performance P-channel MOSFET packaged in SOP-8, designed specifically for high efficiency and low loss applications. This device supports a maximum operating voltage of 30V VDSS and has excellent current carrying capacity, with a maximum continuous drain current of 11A. Especially outstanding is its ultra-low conduction resistance RD (on) of only 12.5m R, greatly reducing power loss and improving overall system efficiency. Suitable for scenarios such as power conversion and motor drive, the SM4435PRL MOSFET, with its superior performance, will become the ideal component for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[SI4435DYPBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4435dypbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:52:49</pubDate>
	<description><![CDATA[SI4435DYPBF is a high-performance P-channel MOSFET, packaged in a compact SOP-8 package, suitable for various electronic devices. It has a rated voltage of 30V VDSS and a continuous drain current ID of up to 11A, ensuring strong power processing capabilities. It is worth mentioning that the device has a conduction resistance RD (on) as low as 12.5m R, effectively reducing power consumption and improving system energy efficiency. Whether in the fields of power management or motor drive, this MOSFET can demonstrate excellent performance and is the ideal choice for your design.]]></description>
</item>
<item>
	<title><![CDATA[IRF9393PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf9393pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:52:36</pubDate>
	<description><![CDATA[IRF9393PBF is a high-performance P-channel MOSFET designed for high efficiency and low loss circuits using SOP-8 packaging. This device has a drain source voltage of 30V (VDSS) and a continuous current ID processing capability of 11A, making it suitable for various medium to high current switching applications. Its conduction resistance RD (on) is as low as 12.5mR, ensuring excellent energy efficiency performance. Widely used in fields such as switching power supplies, motor drives, and battery protection systems, it is an ideal semiconductor component for pursuing efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[IRF9333PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf9333pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:52:24</pubDate>
	<description><![CDATA[IRF9333PBF is a high-performance P-channel MOSFET packaged in SOP-8, designed specifically for high-efficiency switching applications. It has a 30V leakage source voltage VDSS and a powerful 11A continuous current ID carrying capacity, ensuring stable operation in high current environments. The conduction resistance RD (on) is as low as 12.5mR, effectively reducing power loss and improving the overall energy efficiency of the system. Widely used in switch mode power supply conversion, motor drive control, battery management systems, etc., it is your ideal choice for building efficient and energy-saving electronic products.]]></description>
</item>
<item>
	<title><![CDATA[IRF7416PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7416pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:52:12</pubDate>
	<description><![CDATA[IRF7416PBF is a P-channel MOSFET packaged in SOP-8, with a drain source voltage of 30V VDSS and 11A continuous current ID processing capability, particularly suitable for medium to high current switching circuits. Its characteristic lies in the low conduction resistance RD (on) of 12.5mR, which can significantly reduce system losses and improve overall work efficiency. Widely used in switch mode power supplies, motor drives, battery protection and other fields, it is an ideal semiconductor component for designing efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[DMP3036SSS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp3036sss-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:52:00</pubDate>
	<description><![CDATA[DMP3036SSS is a P-channel MOSFET packaged in SOP-8, designed specifically for medium to high current switching applications. It has a high voltage withstand VDSS of 30V and a continuous current ID capability of 11A, ensuring stable operation in high voltage and high current environments. The conduction resistance RD (on) is only 12.5mR, effectively reducing power consumption and improving system energy efficiency. Widely used in various circuits such as switching power supply conversion, motor drive control, battery management systems, etc., it is an ideal semiconductor device for pursuing efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[SM4447APRL(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm4447aprl-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:51:47</pubDate>
	<description><![CDATA[SM4447APRL is a high-performance P-channel MOSFET packaged in SOP-8, with a high voltage withstand VDSS of 30V and powerful continuous current ID processing capability of 11A, suitable for various medium to high current switching applications. Its conduction resistance RD (on) is only 12.5mR, which helps to significantly reduce system power consumption and improve overall efficiency. This MOSFET is widely used in fields such as switching power supplies, motor drives, battery management systems, and is an ideal semiconductor component for achieving efficient and energy-saving design.]]></description>
</item>
<item>
	<title><![CDATA[DMP3020LSS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp3020lss-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:51:35</pubDate>
	<description><![CDATA[DMP3020LSS is a high-performance P-channel MOSFET designed for high-performance applications using SOP-8 packaging. It has a leakage source voltage of 30V VDSS and a continuous current ID carrying capacity of 11A, making it particularly suitable for medium to high current switching circuits. The conduction resistance RD (on) is as low as 12.5mR, effectively reducing power loss and improving overall energy efficiency. Widely used in power conversion, motor drive, battery protection modules and other fields, it is an ideal choice for achieving low loss and high efficiency circuits.]]></description>
</item>
<item>
	<title><![CDATA[SI7308DN-T1-E3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7308dn-t1-e3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:51:23</pubDate>
	<description><![CDATA[SI7308DN-T1-E3 is a high-performance N-channel MOSFET, designed in a DFN3X3-8L compact package, suitable for efficient applications with limited space. The device has a high voltage withstand VDSS of 60V and a continuous current ID processing capability of 20A, ensuring stable operation in high voltage and high current environments. Its conduction resistance RD (on) is only 31mR, effectively reducing power consumption and improving overall circuit efficiency. Widely used in fields such as switching power supplies, motor drives, and battery management systems, it is an ideal semiconductor component for designing efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[BUK9M85-60EX(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/buk9m85-60ex-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:51:11</pubDate>
	<description><![CDATA[BUK9M85-60EX is a high-performance N-channel MOSFET, packaged in a compact DFN3X3-8L package, particularly suitable for applications with limited space and requiring efficient energy conversion. It has a high voltage withstand VDSS of 60V and a continuous current ID processing capability of 20A, which can operate stably even under high current conditions. The low conduction resistance RD (on) design of 31mR helps to reduce power loss and improve overall system efficiency. Widely used in switch mode power supplies, motor drive control, vehicle charging and other fields, it is your ideal choice for pursuing efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[BUK9M53-60EX(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/buk9m53-60ex-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:50:58</pubDate>
	<description><![CDATA[BUK9M53-60EX is a high-performance N-channel MOSFET designed for high power density and high efficiency applications in a compact DFN3X3-8L package. This device provides a high voltage withstand VDSS of 60V and a continuous current ID processing capability of 20A, making it suitable for high current situations. Its 31mR conduction resistance RD (on) effectively reduces system losses and enhances energy efficiency. Widely used in fields such as switching power supplies and motor drives, it is an ideal semiconductor component for designing efficient and energy-saving circuits.]]></description>
</item>
<item>
	<title><![CDATA[BUK9M42-60EX(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/buk9m42-60ex-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:50:46</pubDate>
	<description><![CDATA[BUK9M42-60EX is an N-channel MOSFET, packaged in a space saving DFN3X3-8L package, with superior electrical performance. This device has a 60V drain source withstand voltage VDSS and can withstand 20A continuous current ID. It is suitable for high voltage and high current applications. Its conduction resistance RD (on) is as low as 31mR, effectively reducing power loss and improving system energy efficiency. Widely used in scenarios such as switching power supply conversion, motor drive control, battery management systems, etc., it is the ideal semiconductor component for your pursuit of efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[BUK7M33-60EX(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/buk7m33-60ex-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:50:34</pubDate>
	<description><![CDATA[BUK7M33-60EX is a high-performance N-channel MOSFET designed for high-performance and small volume applications in a compact DFN3X3-8L package. It has a high voltage withstand VDSS of 60V and can withstand 20A continuous current ID, suitable for high voltage and high current situations. The conduction resistance RD (on) is as low as 31mR, effectively reducing power loss and improving system efficiency. Widely used in fields such as switching power supplies, motor drives, battery management systems, etc., it is an ideal semiconductor component for achieving high power density and energy-saving design.]]></description>
</item>
<item>
	<title><![CDATA[DMC3016LNS(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmc3016lns-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:50:22</pubDate>
	<description><![CDATA[DMC3016LNS is an N+P channel MOSFET packaged in a miniaturized DFN3X3-8L package, with excellent electrical performance. This device provides a high voltage withstand VDSS of 30V and can withstand a continuous current ID of 16A, making it particularly suitable for high power density and high-efficiency applications. Its unique low conduction resistance RD (on) is only 14mR, effectively reducing system energy consumption and improving overall work efficiency. Widely used in fields such as switch mode power supplies, battery management systems, and smart devices that require high size and performance, it is an ideal choice for modern electronic design.]]></description>
</item>
<item>
	<title><![CDATA[DMC3025LNS(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmc3025lns-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:50:09</pubDate>
	<description><![CDATA[DMC3025LNS is an N+P channel MOSFET packaged in DFN3X3-8L, integrating low on resistance and small volume. It has a high voltage withstand VDSS of 30V and a continuous current ID processing capability of up to 16A, especially suitable for applications with limited space and requiring efficient conversion. The conduction resistance RD (on) is only 14mR, significantly reducing power loss and improving system efficiency. This MOSFET is widely used in fields such as switching power supplies, battery management systems, and portable devices that require high performance and compact design.]]></description>
</item>
<item>
	<title><![CDATA[NVMFS5C682NL(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvmfs5c682nl-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:49:57</pubDate>
	<description><![CDATA[NVMFS5C682NL is a high-performance N-channel MOSFET packaged in DFN5X6-8L, particularly suitable for high power density and high-performance applications. It has a high voltage withstand VDSS of 60V and a continuous current ID processing capability of 30A, ensuring stable operation under high voltage and high current conditions. Its outstanding feature lies in the conduction resistance RD (on) of only 20mR, which helps to significantly reduce power loss and improve overall system efficiency. Widely used in fields such as switching power supplies and motor drives, it is an ideal semiconductor component for creating high-performance and energy-saving circuit designs.]]></description>
</item>
<item>
	<title><![CDATA[NVMFS5C680NL(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvmfs5c680nl-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:49:45</pubDate>
	<description><![CDATA[NVMFS5C680NL is a high-performance N-channel MOSFET, packaged in a miniaturized DFN5X6-8L package, with excellent electrical performance indicators. This device has a 60V drain source withstand voltage VDSS and can withstand continuous current IDs of up to 30A, making it particularly suitable for high-power and high current applications. Its advantage lies in the conduction resistance RD (on) of only 20mR, which effectively reduces power loss and improves system efficiency. Widely used in various fields such as switching power supply conversion and motor drive control, it is an ideal choice for achieving efficient and energy-saving circuit design.]]></description>
</item>
<item>
	<title><![CDATA[NVMFS5826NL(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvmfs5826nl-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:49:33</pubDate>
	<description><![CDATA[NVMFS5826NL is a high-performance N-channel MOSFET with modern DFN5X6-8L packaging, providing superior electrical performance. Its working voltage VDSS can reach up to 60V and can carry 30A continuous current ID, especially suitable for high current working conditions. The conduction resistance RD (on) is as low as 20mR, significantly improving circuit efficiency and reducing energy consumption. This MOSFET is widely used in industries such as switching power supplies and motor drives, and is an ideal semiconductor component for designers pursuing efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[SI7850DP-T1-GE3(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7850dp-t1-ge3-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:49:20</pubDate>
	<description><![CDATA[SI7850DP-T1-GE3 is a high-performance N-channel MOSFET with advanced DFN5X6-8L packaging, featuring excellent 60V drain source voltage VDSS and continuous current ID processing capability up to 30A, making it particularly suitable for high-power applications. Its conduction resistance RD (on) is only 20mR, significantly improving circuit efficiency and reducing power consumption. This MOSFET is widely used in fields such as switching power supplies, motor drives, battery management systems, and is an ideal semiconductor device for achieving efficient and energy-saving design.]]></description>
</item>
<item>
	<title><![CDATA[SI7218DN-T1-E3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7218dn-t1-e3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:49:08</pubDate>
	<description><![CDATA[SI7218DN-T1-E3 is a high-performance N+N channel MOSFET that utilizes innovative DFN3X3-8L packaging technology. With its 30V leakage source voltage VDSS and powerful 20A continuous current ID capability, it can operate stably under low voltage and high current conditions. Of particular concern is its extremely low conduction resistance RD (on) of only 19mR, which greatly reduces system losses and improves energy efficiency performance. This MOSFET is widely used in high-efficiency power management solutions such as power conversion, motor drive, and fast charging devices, making it an ideal choice for modern electronic product design.]]></description>
</item>
<item>
	<title><![CDATA[NCV8403A(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ncv8403a-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:48:56</pubDate>
	<description><![CDATA[NCV8403A MOSFET is a high-performance N-channel MOSFET designed for high-performance circuits using TO-252-2L packaging. This device provides a drain source withstand voltage VDSS of up to 40V and a stable 20A continuous current ID to meet the application requirements of high voltage and high current. Its excellent conduction resistance RD (on) is as low as 25mR, which helps to significantly reduce energy loss and improve system efficiency. Widely used in switch mode power supplies, motor drives, battery chargers, and other power management fields, it is a reliable choice for building high-quality electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SM454AT9RL(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm454at9rl-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:48:44</pubDate>
	<description><![CDATA[SM454AT9RL is a high-performance N-channel MOSFET that uses the classic TO-252-2L package, making it convenient for users to flexibly apply in diverse circuit designs. This device has a maximum drain source voltage (VDSS) of 40V, can continuously provide a drain current (ID) of up to 20A, and exhibits an extremely low 25m R on resistance (RD (on)) in the on state, ensuring high efficiency and low power consumption performance. This MOSFET is suitable for various occasions such as power conversion, motor drive, battery management systems, etc., and meets your advanced circuit control needs with its excellent electrical performance.]]></description>
</item>
<item>
	<title><![CDATA[MDV3604URH(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/mdv3604urh-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:48:31</pubDate>
	<description><![CDATA[MDV3604URH is a high-performance P-channel MOSFET designed for high-density circuits using a miniaturized DFN3X3-8L package. The device has a maximum drain source voltage (VDSS) of 30V, can withstand continuous drain current (ID) of up to 32A, and exhibits an extremely excellent 10m R on resistance (RD (on)), ensuring high efficiency and low heat generation under high current operating conditions. This MOSFET is widely used in power conversion, motor drive, battery management systems, and other applications, making it an ideal choice for achieving high power density and energy-saving design.]]></description>
</item>
<item>
	<title><![CDATA[DMG7401SFG(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg7401sfg-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:48:19</pubDate>
	<description><![CDATA[DMG7401SFG MOSFET is a high-performance P-channel MOSFET packaged in a compact DFN3X3-8L package. It has a maximum leakage source voltage of 30V, VDSS, and powerful 50A continuous current ID processing capability, suitable for various high-voltage and high current application scenarios. Its conduction resistance RD (on) is only 9mR, which helps to reduce system internal resistance, reduce energy consumption, and improve overall energy efficiency performance. It is an ideal choice for switch mode power supplies, load switches, battery protection, and other high-efficiency power management systems. The exquisite and compact packaging size is more convenient to use in space limited designs.]]></description>
</item>
<item>
	<title><![CDATA[FQD20N06(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fqd20n06-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:48:07</pubDate>
	<description><![CDATA[The FQD20N06 N-channel MOSFET adopts a compact TO-252-2L package, which has excellent heat dissipation performance and installation convenience. Its main parameters include a maximum drain source voltage (VDSS) of 60V, which can support continuous drain current (ID) of up to 20A, fully meeting high power requirements. It is worth mentioning that the conduction resistance of the device is as low as 27m R, which helps to improve system efficiency and reduce power consumption. Widely used in power converters, motor drives, and other fields, it is an ideal choice for efficient and stable semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[FQD13N10L(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fqd13n10l-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:47:54</pubDate>
	<description><![CDATA[The FQD13N10L N-channel MOSFET adopts TO-252-2L packaging, suitable for medium current applications in 100V high voltage environments. This device has a maximum drain source voltage of 100V (VDSS) and a continuous drain current of 15A (ID), demonstrating stable and reliable performance in high voltage systems. Its conduction resistance RD (on) is 100mR, although it is not an ultra-low resistance value, it ensures good cost-effectiveness while meeting medium current requirements. Widely used in power conversion, motor drive, battery management, etc., it is an ideal semiconductor device that pursues comprehensive performance and cost control.]]></description>
</item>
<item>
	<title><![CDATA[FQD13N06L(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fqd13n06l-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:47:42</pubDate>
	<description><![CDATA[FQD13N06L is a high-performance N-channel MOSFET, packaged in a compact TO-252-2L package, suitable for various space limited design requirements. The device can continuously output a drain current (ID) of 20A at a maximum drain source voltage (VDSS) of 60V, making it particularly suitable for high voltage and high current application environments. Its low on resistance of 27m R ensures high energy efficiency and low power consumption performance, and is widely used in power conversion, motor drive and other fields. It is a high-quality component for achieving efficient and stable electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[ZVN3310F(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zvn3310f-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:47:30</pubDate>
	<description><![CDATA[The ZVN3310F N-channel MOSFET adopts a compact SOT-23 package, which facilitates circuit board layout and reduces space occupation. The device operates at a voltage VDSS of up to 100V, suitable for high voltage and low current applications, providing a drain current ID of 0.2A. Although the conduction resistance RD (on) is 2800m R, it still plays an important role in specific low-power and fine control requirements, such as signal switching, logic level conversion, and power management. ZVN3310F MOSFET has become an ideal semiconductor component choice among many design projects due to its reliability and flexibility.]]></description>
</item>
<item>
	<title><![CDATA[VN2110(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/vn2110-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:47:18</pubDate>
	<description><![CDATA[The VN2110 N-channel MOSFET adopts a small SOT-23 packaging form, which has excellent solderability and space utilization. The rated voltage VDSS of this device is up to 100V, suitable for high voltage and low current application environments, and can provide a stable drain current ID of 0.2A. Its conduction resistance RD (on) is 2800m R, although the value is relatively large, it is still suitable for certain scenarios that require fine control and low power consumption, such as signal switching, power management, or logic level conversion. VN2110 MOSFETs are ideal semiconductor components suitable for specific design requirements.]]></description>
</item>
<item>
	<title><![CDATA[FDD6530A(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdd6530a-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:47:06</pubDate>
	<description><![CDATA[The FDD6530A N-channel MOSFET adopts TO-252-2L packaging, which has excellent heat dissipation performance and high cost-effectiveness. This device supports a working voltage of 20V VDSS and can stably transmit drain current IDs up to 20A, especially suitable for medium current applications. Its conduction resistance RD (on) is as low as 16m R, effectively reducing power loss and improving system efficiency. Widely used in power conversion, load switching, motor drive and other fields, FDD6530A MOSFET is an ideal semiconductor component for medium to high power design.]]></description>
</item>
<item>
	<title><![CDATA[NVMFS5C468N(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvmfs5c468n-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:46:53</pubDate>
	<description><![CDATA[NVMFS5C468N N-channel MOSFET is designed in a DFN5X6-8L small package, providing excellent thermal performance and space optimization. The device operates at a voltage VDSS of up to 40V and supports 50A continuous drain current ID. It is designed specifically for high current application environments. Its conduction resistance RD (on) is only 11m R, which helps to minimize system losses and improve energy efficiency. Widely used in various fields such as power conversion, motor drive, and battery management systems, NVMFS5C468N MOSFETs are ideal semiconductor components for pursuing efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[SIR836DP-T1-GE3(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sir836dp-t1-ge3-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:46:41</pubDate>
	<description><![CDATA[The SIR836DP-T1-GE3 N-channel MOSFET adopts advanced DFN5X6-8L packaging technology, which has excellent thermal performance and space utilization. This device can carry up to 50A continuous drain current ID under 40V voltage VDSS, designed specifically for high current applications. Its core highlight lies in its extremely low conduction resistance RD (on) -11m R, effectively reducing power consumption and improving system efficiency. Widely used in power conversion, motor drive, battery management systems and other fields, SIR836DP-T1-GE3 MOSFET is an ideal semiconductor component seeking high-performance and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[SM4186T9RL(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm4186t9rl-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:46:28</pubDate>
	<description><![CDATA[The SM4186T9RL N-channel MOSFET adopts the industry standard TO-252-2L packaging, ensuring excellent heat dissipation performance and a wide range of applications. This device has a high rated voltage VDSS of 40V and can easily handle high current applications of 50A. Its core competitiveness lies in its ultra-low conduction resistance RD (on) of only 11m R, effectively reducing power loss and improving overall system efficiency.]]></description>
</item>
<item>
	<title><![CDATA[FDD8447L-F085(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdd8447l-f085-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:46:16</pubDate>
	<description><![CDATA[FDD8447L-F085 N-channel MOSFET, packaged in TO-252-2L format, ensures efficient heat dissipation and compatibility with a wide range of applications. The device provides a working voltage of 40V VDSS and can withstand continuous drain current ID of up to 50A, designed specifically for handling high-intensity power tasks. Its unique advantage lies in its ultra-low conduction resistance RD (on) of 11m R, which effectively reduces power consumption and improves system energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[IPD80P03P4L-07(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ipd80p03p4l-07-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:46:04</pubDate>
	<description><![CDATA[The IPD80P03P4L-07 P-channel MOSFET adopts TO-252-2L packaging, which has excellent heat dissipation performance and high reliability. The device operates at a voltage VDSS of up to 30V, providing a sustainable drain current ID of 70A, meeting the requirements of high current applications. Its highlight lies in the conduction resistance RD (on) of only 8m R, which effectively reduces power loss and improves system efficiency. This MOSFET is widely used in fields such as power conversion, motor drive, battery management systems, and is an ideal semiconductor solution for high power density and low resistance applications.]]></description>
</item>
<item>
	<title><![CDATA[BSH114(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsh114-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:45:52</pubDate>
	<description><![CDATA[The BSH114 N-channel MOSFET adopts a small SOT-23 packaging form, achieving space savings and high integration. This device has a high voltage VDSS of 100V and provides a stable 2A drain current ID, suitable for various high voltage and low current application scenarios. Its characteristic is that the conduction resistance RD (on) is as low as 220m R, effectively reducing power loss and improving system energy efficiency. This MOSFET is widely used in power management, logic level conversion, load driving and other functional modules, and is an ideal semiconductor component in compact design that combines high performance and low energy consumption.]]></description>
</item>
<item>
	<title><![CDATA[PMV213SN(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/pmv213sn-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:45:40</pubDate>
	<description><![CDATA[The PMV213SN N-channel MOSFET adopts a compact SOT-23 packaging, providing excellent packaging density and thermal performance. This device has a high voltage withstand VDSS of 100V and can stably handle 2A drain current IDs, making it suitable for low-voltage and high current applications. Its conduction resistance RD (on) is 220m R, ensuring lower conduction loss and higher energy efficiency conversion rate. This MOSFET is widely used in power switches, load drives, battery protection, and other fields, making it an ideal semiconductor component choice that balances size, performance, and reliability.]]></description>
</item>
<item>
	<title><![CDATA[AOD21357(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod21357-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:45:27</pubDate>
	<description><![CDATA[The AOD21357 P-channel MOSFET adopts the standard TO-252-2L packaging, which has excellent heat dissipation performance and wide applicability. The working voltage of the device is VDSS up to 30V, which can withstand a strong continuous drain current ID of 80A, fully demonstrating its powerful current processing ability. Of particular concern is that its internal conduction resistance RD (on) is only 6.5m R, which allows it to significantly reduce power loss and improve system energy efficiency during operation. AOD21357 MOSFET is suitable for various high-voltage and high current applications, such as power conversion, motor drive, etc. It is an ideal choice for high-efficiency and low-power semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[DMP3010LK3(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp3010lk3-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:45:15</pubDate>
	<description><![CDATA[The DMP3010LK3 P-channel MOSFET adopts the classic TO-252-2L packaging, ensuring good heat dissipation performance and compatibility. The device has a rated voltage of 30V VDSS and can withstand a powerful drain current ID of up to 80A, demonstrating excellent power transmission capability. Its core highlight lies in the conduction resistance RD (on) as low as 6.5m R, which stands out among similar products, effectively reducing system power consumption and significantly improving energy efficiency. The DMP3010LK3 MOSFET is particularly suitable for high-voltage and high current applications, such as power converters, motor drives, and other scenarios. It is an ideal semiconductor component choice for engineers to achieve efficient and energy-saving design.]]></description>
</item>
<item>
	<title><![CDATA[FDS8984(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds8984-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:45:03</pubDate>
	<description><![CDATA[FDS8984 is a high-performance N+N channel MOSFET designed for high current applications using SOP-8 packaging. This device has a maximum operating voltage of 30V VDSS and can stably provide a drain current of 8.5A, demonstrating excellent current processing capabilities; Its 15m R low conduction resistance RD (on) design effectively reduces power loss and improves system energy efficiency. Widely used in power conversion, motor drive, battery management systems and other fields, it is an ideal MOSFET solution for building efficient and energy-saving electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[FDS6990AS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds6990as-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:44:50</pubDate>
	<description><![CDATA[This FDS6990AS MOS transistor adopts advanced N+N channel technology and is packaged as SOP-8, which is compact and easy to integrate. Its rated voltage VDSS is as high as 30V, and the continuous current ID can reach 8.5A, demonstrating strong power processing capabilities. Especially outstanding is that its conduction resistance is only 15m R, effectively reducing power consumption and improving system efficiency, making it an ideal choice for circuit design such as various high-end power conversion and motor drive. Each MOSFET undergoes strict quality testing to ensure excellent performance and stable performance.]]></description>
</item>
<item>
	<title><![CDATA[FDS6912A(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds6912a-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:44:38</pubDate>
	<description><![CDATA[The FDS6912A MOSFET is a high-performance N+N channel semiconductor device, packaged in SOP-8 format, with a compact structure that facilitates flexible layout in various circuit boards. This device has a high rated voltage VDSS of 30V and a continuous current ID capability of up to 8.5A, demonstrating strong power processing performance. Of particular note, its excellent on resistance is only 15mR, which helps to significantly reduce system losses and improve overall work efficiency. This MOSFET is widely used in fields such as power conversion and motor drive. Through strict quality control, it ensures that each chip has excellent stability and durability.]]></description>
</item>
<item>
	<title><![CDATA[FDS6294(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds6294-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:44:26</pubDate>
	<description><![CDATA[FDS6294 is a high-performance N-channel MOSFET designed with an economical and practical SOP-8 package, specifically for high-efficiency power conversion, motor drive, and other fields. The highlights of the device include a maximum operating voltage VDSS of up to 30V, the ability to carry a large current of 15A, and an extremely low conduction resistance RD (on) of only 8mR, effectively reducing power loss and improving overall energy efficiency. This MOSFET has become an ideal component for medium and low voltage switching circuits due to its excellent electrical performance and compact packaging.]]></description>
</item>
<item>
	<title><![CDATA[STP4435(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/stp4435-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:44:14</pubDate>
	<description><![CDATA[The STP4435 P-channel MOSFET adopts a compact and widely used SOP-8 package, providing excellent circuit integration solutions. This MOSFET has powerful performance with a rated voltage VDSS of up to 30V and can withstand continuous 6A drain current, ensuring stable operation under various high load conditions. Especially noteworthy is its ultra-low conduction resistance RD (on), which is only 28m R, effectively reducing energy loss and improving energy efficiency, making it suitable for application in multiple fields such as power management and motor drive. STP4435 MOSFET, with its outstanding performance and reliability, brings you the ideal semiconductor solution.]]></description>
</item>
<item>
	<title><![CDATA[IRF7406PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7406pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:44:01</pubDate>
	<description><![CDATA[The IRF7406PBF P-channel MOSFET is presented in a compact SOP-8 package, specifically designed for high-performance electronic devices. This device has excellent electrical parameters, with a rated voltage VDSS of up to 30V and a continuous drain current ID of up to 6A, demonstrating strong power processing performance. Especially outstanding is its ultra-low conduction resistance RD (on), which is only 28m R, greatly reducing power consumption and improving system efficiency. It is widely used in fields such as power conversion and motor control. With its excellent stability and reliability, IRF7406PBF MOSFETs have become the ideal semiconductor component choice in your design.]]></description>
</item>
<item>
	<title><![CDATA[DMP3056LSS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp3056lss-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:43:49</pubDate>
	<description><![CDATA[DMP3056LSS P-channel MOSFET is designed with high-efficiency SOP-8 packaging, specifically for high stability and low energy consumption. It has a rated voltage of 30V VDSS and a continuous drain current ID of up to 6A, ensuring its excellent power processing capability. Its outstanding feature lies in its ultra-low conduction resistance RD (on) of only 28m R, effectively reducing power loss and improving system efficiency, making it an ideal choice in fields such as power management and motor drive. This MOSFET meets your stringent requirements for semiconductor devices with its excellent performance and reliable quality.]]></description>
</item>
<item>
	<title><![CDATA[SM4411PRL(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm4411prl-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:43:37</pubDate>
	<description><![CDATA[SM4411PRL is a P-channel MOSFET designed for high integration and energy efficiency using a small SOP-8 package. This device has a drain source voltage of 30V (VDSS) and can stably handle a continuous drain current (ID) of 6A. Its excellent on resistance is as low as 28m R (RD (on)), ensuring high efficiency and low loss in power management, load switching, and similar applications. Suitable for various battery powered devices, power converters, and other situations that require precise current control, it is an ideal semiconductor component for improving system performance.]]></description>
</item>
<item>
	<title><![CDATA[SI9435BDY-T1-E3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si9435bdy-t1-e3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:43:24</pubDate>
	<description><![CDATA[SI9435BDY-T1-E3 is a P-channel MOSFET that uses a compact SOP-8 package and is suitable for efficient design of various electronic devices. The device supports a drain source voltage of 30V (VDSS), can withstand a continuous drain current of 6A (ID), and has a conduction resistance as low as 28m R (RD (on)), ensuring low power consumption and high efficiency in switching applications. Widely used in power management, load switching, battery protection systems and other fields, it is an ideal semiconductor component for improving system performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[AO4405(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4405-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:43:12</pubDate>
	<description><![CDATA[AO4405 is a high-performance P-channel MOSFET, packaged in an economical and efficient SOP-8 package, suitable for various circuit designs. The device has a drain source voltage of 30V (VDSS), can provide a continuous drain current (ID) of 6A, and exhibits excellent energy efficiency and low loss characteristics in high current applications with a conductivity resistance as low as 28m R (RD (on)). Widely used in scenarios such as power switches, load switching, and battery protection systems, it is an ideal semiconductor component for optimizing system performance.]]></description>
</item>
<item>
	<title><![CDATA[SI4431CDY-T1-GE3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4431cdy-t1-ge3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:43:00</pubDate>
	<description><![CDATA[SI4431CDY-T1-GE3 is a P-channel MOSFET packaged in SOP-8, suitable for circuit designs with limited space. This device has a drain source voltage of 30V (VDSS), can handle a continuous drain current of 6A (ID), and exhibits superior energy efficiency and low loss performance among similar products with a conductivity resistance as low as 28m R (RD (on)). Widely used in power conversion, load switching, battery management systems, etc., it is an ideal semiconductor component choice to improve the overall efficiency of the system.]]></description>
</item>
<item>
	<title><![CDATA[SI4431CDY-T1-E3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4431cdy-t1-e3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:42:47</pubDate>
	<description><![CDATA[SI4431CDY-T1-E3 is a high-performance P-channel MOSFET designed for compact circuits using a small SOP-8 package. The device supports a drain source voltage of 30V (VDSS), can withstand a maximum continuous drain current of 6A (ID), and has a conduction resistance as low as 28m R (RD (on)), ensuring low loss and high efficiency in switching applications. Widely used in power management, load switching, battery protection and other fields, it is an ideal semiconductor component choice for optimizing system performance.]]></description>
</item>
<item>
	<title><![CDATA[SQ4470EY(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sq4470ey-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:42:35</pubDate>
	<description><![CDATA[SQ4470EY is a high-performance N-channel MOSFET designed in a compact SOP-8 package, suitable for efficient design of various electronic devices. This device supports a drain source voltage (VDSS) of up to 60V and can provide a stable 10A drain current (ID) under normal operating conditions, while its excellent on resistance is only 10m R (RD (on)), ensuring low power consumption and high efficiency in high current applications. Widely used in power conversion, motor drive control, battery management systems and other fields, it is an ideal semiconductor component for improving system performance.]]></description>
</item>
<item>
	<title><![CDATA[DMT69M8LSS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmt69m8lss-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:42:22</pubDate>
	<description><![CDATA[DMT69M8LSS is a high-performance N-channel MOSFET that uses a small SOP-8 package and is suitable for compact circuit design. The device has a drain source voltage of 60V (VDSS) and can stably carry a continuous drain current of 10A (ID). Its on resistance (RD) as low as 10m R ensures high efficiency and low power consumption performance in high voltage applications. Widely used in scenarios such as power conversion, motor drive, and battery management systems, it is an ideal semiconductor component for improving system performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[IRLR6225(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlr6225-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:42:10</pubDate>
	<description><![CDATA[IRLR6225 is an N-channel MOSFET designed for high current applications using standard TO-252-2L packaging. This device has a drain source voltage of 20V (VDSS), can support continuous drain current (ID) of up to 80A, and has the industry-leading 3.5m R on resistance (RD (on)), ensuring extremely low power loss and excellent energy efficiency performance under high current conditions. Widely used in fields such as switch mode power supplies and electric vehicle charging systems, it is an ideal choice to improve system performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[AOD424G(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod424g-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:41:58</pubDate>
	<description><![CDATA[AOD424G is a high-performance N-channel MOSFET that uses the common TO-252-2L package and is suitable for various medium to high power electronic devices. This device has a drain source voltage of 20V (VDSS), can withstand continuous drain current (ID) of up to 80A, and exhibits excellent low resistance characteristics in a conductive state, only 3.5m R (RD (on)), effectively reducing system losses and improving energy efficiency. Widely used in power conversion, motor drive control, high current switching and other fields, it is an ideal semiconductor component for improving system performance and energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[AOD424(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod424-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:41:46</pubDate>
	<description><![CDATA[AOD424 is an N-channel MOSFET, packaged in standard TO-252-2L, suitable for various medium to high power applications. The device has a drain source voltage of 20V (VDSS) and can safely handle continuous drain current (ID) of up to 80A, while its excellent conduction resistance is only 3.5m R (RD (on)), ensuring low loss and high performance under high current conditions. Widely used in scenarios such as switching power supplies, motor drives, and battery management systems, it is a key semiconductor component for improving system performance.]]></description>
</item>
<item>
	<title><![CDATA[FDN5618P(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdn5618p-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:41:33</pubDate>
	<description><![CDATA[FDN5618P is a P-channel MOSFET that uses a small SOT-23 package and is suitable for space limited design projects. This device provides a drain source voltage (VDSS) of up to 60V, supports a continuous drain current (ID) of 2A, and has a conduction resistance (RD (on) of 160m R, demonstrating excellent performance in low voltage applications. Widely used in power switch, load switching, logic level conversion and other functional modules, it is your ideal choice for building efficient and reliable circuits.]]></description>
</item>
<item>
	<title><![CDATA[ZXMN3A04DN8(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zxmn3a04dn8-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:41:21</pubDate>
	<description><![CDATA[ZXMN3A04DN8 is a high-performance N+N channel MOSFET, packaged in a compact SOP-8 package, suitable for diverse circuit design needs. The device has a drain source voltage of 30V (VDSS), can stably carry a continuous drain current of 10A (ID), and its low on resistance (RD (on) of 14m R helps the system achieve excellent energy efficiency and low loss performance. Widely used in industries such as power management, switch regulators, and motor drives, it is an ideal semiconductor device choice for improving system performance.]]></description>
</item>
<item>
	<title><![CDATA[IRL6372PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irl6372pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:41:09</pubDate>
	<description><![CDATA[IRL6372PBF is a high-performance N+N channel MOSFET that adopts the classic SOP-8 packaging form and is suitable for a wide range of circuit design requirements. The device is characterized by a drain source voltage of 30V (VDSS), which can withstand a continuous drain current of 10A (ID), and its on resistance (RD) as low as 14m R effectively ensures low power consumption and high efficiency in high current applications. Widely used in power conversion, load switching, motor drive and other related fields, it is an ideal semiconductor component choice for optimizing system performance.]]></description>
</item>
<item>
	<title><![CDATA[DMT3020LSD(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmt3020lsd-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:40:57</pubDate>
	<description><![CDATA[DMT3020LSD is a high-performance N+N channel MOSFET, packaged in a compact SOP-8 package, suitable for various electronic devices. This device has a drain source withstand voltage (VDSS) of 30V, can withstand a maximum continuous drain current (ID) of 10A, and has excellent on resistance characteristics, only 14m R (RD (on)), ensuring high efficiency and low power consumption performance even in high voltage environments. Widely used in power management, load switching, and motor drive systems, it is an ideal semiconductor component for improving system efficiency.]]></description>
</item>
<item>
	<title><![CDATA[DMG4822SSD(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg4822ssd-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:40:44</pubDate>
	<description><![CDATA[DMG4822SSD is a high-performance N+N channel MOSFET that uses standard SOP-8 packaging and is suitable for various circuit designs. The device has a drain source voltage of 30V (VDSS) and can withstand continuous drain current (ID) of up to 10A. Its on resistance (RD) of as low as 14m R ensures low loss and high efficiency in high current applications. Widely used in scenarios such as power conversion, load switching, and motor drive, it is an ideal semiconductor component for achieving excellent system performance.]]></description>
</item>
<item>
	<title><![CDATA[NVMFS5C468NL(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvmfs5c468nl-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:40:32</pubDate>
	<description><![CDATA[NVMFS5C468NL is an N-channel MOSFET designed for space optimization in modern electronic devices, using a miniaturized DFN5X6-8L package. The device operates at a voltage of up to 40V (VDSS), supports a continuous drain current (ID) of 60A, and has a conduction resistance (RD (on) as low as 6.9m R, ensuring efficient and low loss operation. Widely used in power conversion, motor drive, battery management systems and other fields, it is an ideal semiconductor component for achieving high power density and excellent energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[NVMFS5834NL(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvmfs5834nl-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:40:20</pubDate>
	<description><![CDATA[NVMFS5834NL is an N-channel MOSFET that uses a miniaturized DFN5X6-8L package to meet the dual space and performance requirements of modern electronic products. The device operates stably, with a drain source voltage (VDSS) of 40V and a continuous drain current (ID) of up to 60A. At the same time, it has a conduction resistance (RD (on) as low as 6.9m R, effectively reducing energy loss and improving system efficiency. This MOSFET is widely used in various fields such as switching power supplies, motor drives, and high-frequency switching circuits, making it an ideal semiconductor component for achieving high power density and excellent energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[SIR426DP-T1-GE3(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sir426dp-t1-ge3-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:40:07</pubDate>
	<description><![CDATA[SIR426DP-T1-GE3 is a high-performance N-channel MOSFET designed specifically for compact modern electronic devices in a compact DFN5X6-8L package. This device provides a drain source voltage of 40V (VDSS) and supports continuous drain current (ID) of up to 60A, ensuring strong current processing capability. It is worth mentioning that its excellent conduction resistance is only 6.9 m R (RD (on)), effectively reducing power consumption and improving energy efficiency. This MOSFET is suitable for various high-power application scenarios such as power conversion and motor drive, and is an ideal semiconductor component for achieving efficient and energy-saving design.]]></description>
</item>
<item>
	<title><![CDATA[NTMFS5C468NL(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntmfs5c468nl-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:39:55</pubDate>
	<description><![CDATA[NTMFS5C468NL is an N-channel MOSFET designed to meet the miniaturization needs of modern electronic products, using a compact DFN5X6-8L package. The device has excellent specifications, with a drain source withstand voltage (VDSS) of 40V, can continuously pass a drain current (ID) of up to 60A, and has a conductivity resistance as low as 6.9m R (RD (on)), effectively reducing power loss and improving energy efficiency. This MOSFET is an ideal choice for pursuing high-performance and energy-saving design.]]></description>
</item>
<item>
	<title><![CDATA[CSD18504Q5A(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/csd18504q5a-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:39:43</pubDate>
	<description><![CDATA[CSD18504Q5A is an N-channel MOSFET, packaged in a small DFN5X6-8L package, particularly suitable for high-density PCB layouts. Its core parameters include a maximum drain source voltage (VDSS) of 40V, which can withstand continuous drain current (ID) of up to 60A, and has excellent low on resistance characteristics, only 6.9m R (RD (on)), ensuring efficient and low loss operation. This MOSFET is widely used in power management, inverters, power tools, and other fields, making it an ideal solution for high-power applications due to its excellent electrical performance.]]></description>
</item>
<item>
	<title><![CDATA[AON6236(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon6236-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:39:30</pubDate>
	<description><![CDATA[The AON6236 N-channel MOSFET adopts a compact DFN5X6-8L package, specially designed for modern precision electronic equipment. The device supports a maximum drain source voltage (VDSS) of 40V and provides a continuous drain current (ID) of up to 60A, ensuring strong current conductivity. Especially outstanding is its excellent conduction resistance performance, which is only 6.9 m R (RD (on)), significantly reducing system losses and improving energy efficiency ratio. This MOSFET is widely used in various efficient power conversion, motor drive, and battery management systems, making it an ideal semiconductor component for engineers pursuing excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[SM6442D1RL(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm6442d1rl-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:39:18</pubDate>
	<description><![CDATA[The N-channel MOSFET with model SM6442D1RL adopts advanced DFN5X6-8L packaging technology, with exquisite size and flexible layout, making it particularly suitable for high-density integrated design. This device has an excellent electrical parameter of 40V maximum drain source voltage (VDSS), can withstand continuous drain current (ID) of up to 60A, and has a conduction resistance as low as 6.9m R (RD (on)), ensuring efficient energy conversion and transmission performance. This product is widely used in circuit systems that require high efficiency, such as switch mode power supplies, chargers, and motor drives. It is your high-quality choice to improve overall system performance.]]></description>
</item>
<item>
	<title><![CDATA[BSC093N04LSG(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc093n04lsg-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:39:06</pubDate>
	<description><![CDATA[BSC093N04LSG is an efficient N-channel MOSFET, packaged in a miniaturized DFN5X6-8L package, suitable for space limited design solutions. This device has a leakage source withstand voltage (VDSS) of 40V and a high current carrying capacity (ID) of 60A, with a conductivity resistance as low as 6.9m R (RD (on)), ensuring low energy loss even under high-power operation. This MOSFET is widely used in power conversion, motor drive, and other high-performance circuits due to its excellent electrical performance, making it the ideal choice for optimizing system performance.]]></description>
</item>
<item>
	<title><![CDATA[SI7848BDP-T1-GE3(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7848bdp-t1-ge3-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:38:54</pubDate>
	<description><![CDATA[SI7848BDP-T1-GE3 is a high-performance N-channel MOSFET, packaged in a compact DFN5X6-8L package. It has a rated drain source voltage VDSS of 40V and a continuous drain current ID of up to 60A, demonstrating excellent power processing capabilities. The conduction resistance is only 6.9m R, effectively reducing power consumption and improving system energy efficiency. It is suitable for various high-power electronic devices and power management applications, and is the ideal choice in your design.]]></description>
</item>
<item>
	<title><![CDATA[SI7848BDP-T1-E3(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7848bdp-t1-e3-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:38:41</pubDate>
	<description><![CDATA[SI7848BDP-T1-E3 is an N-channel MOSFET designed in a small DFN5X6-8L package for efficient, low loss power conversion and motor drive applications. This device has a maximum operating voltage of 40V VDSS, capable of handling continuous currents up to 60A, and has a conduction resistance as low as 6.9mR, ensuring excellent energy efficiency performance even during high current operation.]]></description>
</item>
<item>
	<title><![CDATA[DMP510DL(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp510dl-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:38:29</pubDate>
	<description><![CDATA[DMP510DL is a P-channel MOSFET packaged in a miniature SOT-23 package, suitable for space limited and low-power circuit designs. This device has a maximum operating voltage of 50V VDSS, provides a continuous current processing capacity of 0.1A, and a conduction resistance RD (on) of 2000mR. Although its current carrying capacity is relatively small, it exhibits advantages in low voltage and fine control fields, such as being part of load switches, logic level converters, or power management modules, making it particularly suitable for electronic products that focus on size and energy conservation.]]></description>
</item>
<item>
	<title><![CDATA[BSS84Q(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss84q-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:38:17</pubDate>
	<description><![CDATA[BSS84Q is a P-channel MOSFET packaged in a compact SOT-23 package, suitable for low voltage and low current control applications. The maximum operating voltage VDSS of this device is 50V, capable of carrying a continuous current of 0.1A, and has a conduction resistance RD (on) of 2000mR. Although the conduction resistance is relatively high, its compact size makes it suitable for integration into various space limited designs, such as logic level conversion, load switching, and low-power circuits, providing precise signal control and power management functions.]]></description>
</item>
<item>
	<title><![CDATA[FDMS0312AS(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdms0312as-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:38:04</pubDate>
	<description><![CDATA[FDMS0312AS is a high-performance N-channel MOSFET designed for high-efficiency and low-power applications using compact DFN5X6-8L packaging technology. At a voltage of 30V VDSS, the device can stably handle continuous currents up to 80A, demonstrating excellent current carrying capacity. Its key feature is the ultra-low conduction resistance RD (on) of only 4.3mR, which significantly improves energy efficiency and reduces system losses. FDMS0312AS is suitable for power conversion, motor drive, and other applications that require efficient semiconductor components.]]></description>
</item>
<item>
	<title><![CDATA[FDD1600N10ALZ(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdd1600n10alz-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:37:52</pubDate>
	<description><![CDATA[FDD1600N10ALZ N-channel MOSFET, packaged in TO-252-2L, is tailored for 100V high voltage, medium current applications. The device provides a maximum drain source voltage (VDSS) of 100V and supports continuous drain current (ID) of up to 15A, ensuring stable and reliable operation in high-voltage circuits. Its conduction resistance RD (on) is 100mR, which is not an ultra-low resistance, but sufficient to meet the needs of many general power conversion, load switching, and basic motor drives. It is an ideal semiconductor component that balances performance and cost-effectiveness.]]></description>
</item>
<item>
	<title><![CDATA[DMS3016SSSA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dms3016sssa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:37:40</pubDate>
	<description><![CDATA[DMS3016SSSA is a high-performance N-channel MOSFET packaged in SOP-8, suitable for various high-efficiency power conversion and motor drive applications. This device has a maximum operating voltage of 30V, VDSS, and can stably carry continuous currents of up to 15A. Its uniqueness lies in its extremely low conduction resistance RD (on), which is only 8mR, helping to significantly reduce system power consumption and improve overall energy efficiency. This MOSFET, with its superior electrical performance and compact packaging, is an ideal solution for medium and low voltage switch circuit design.]]></description>
</item>
<item>
	<title><![CDATA[DMP6185SK3(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp6185sk3-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:37:28</pubDate>
	<description><![CDATA[DMP6185SK3 is a high-performance P-channel MOSFET designed in a miniaturized TO-252-2L package, suitable for various power conversion and load switching applications. It has excellent electrical performance, with a rated voltage of up to 60V, a continuous current capacity of 10A, and a conducting resistance of only 125m R, effectively reducing power loss and improving system energy efficiency. This MOSFET is the ideal choice for your circuit design due to its stable performance and compact size.]]></description>
</item>
<item>
	<title><![CDATA[DMP3028LSD(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp3028lsd-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:37:16</pubDate>
	<description><![CDATA[The DMP3028LSD model MOSFET adopts standard SOP-8 packaging, which integrates high-quality P+P channel technology internally, designed specifically for efficient power management. This device has a drain source voltage of 30V (VDSS) and can continuously handle drain current (ID) up to 11A, making it suitable for various medium to high current application scenarios. Its conduction resistance is only 14mR (RD (on)), greatly improving system energy efficiency and reducing energy loss. Widely used in power conversion, motor drive, and various switch mode power control circuits, it is an ideal semiconductor solution for improving product performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[DMN6068LK3(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn6068lk3-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:37:03</pubDate>
	<description><![CDATA[The DMN6068LK3 N-channel MOSFET adopts a compact TO-252-2L package, which has superior electrical performance. Its rated maximum drain source voltage (VDSS) is 60V, which can withstand high voltage working environments and provide continuous drain current (ID) of up to 20A, ensuring strong driving force. The conduction resistance is only 27m R, effectively improving the efficiency of the system and reducing unnecessary energy loss. This device is suitable for various power conversion and motor control applications, making it an ideal choice for building efficient and energy-saving electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[DMN3024LSD(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn3024lsd-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:36:53</pubDate>
	<description><![CDATA[DMN3024LSD is a high-performance N+N channel MOSFET designed in SOP-8 packaging for high power density and efficiency. Its key features include a maximum working voltage of up to 30V VDSS, which can withstand 8.5A continuous drain current, ensuring strong current processing capability; The conduction resistance RD (on) as low as 15m R effectively reduces power loss and improves system energy efficiency. Widely used in power conversion, motor drive, battery management systems and other fields, it is the ideal MOSFET choice for achieving energy-saving and efficient electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[FDS89161LZ(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds89161lz-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:36:39</pubDate>
	<description><![CDATA[FDS89161LZ is a high-performance N+N channel MOSFET packaged in SOP-8, particularly suitable for high power density and high-performance electronic designs. This device has a maximum operating voltage of 100V VDSS, can withstand continuous currents of up to 8A, and has excellent conductivity performance, with a conductivity resistance as low as 100mR (RD (on)), greatly improving system energy efficiency. This MOSFET performs excellently in power conversion, motor drive, and high-voltage switching applications, making it an ideal choice for engineers pursuing excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[SM4807PRL(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm4807prl-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:36:26</pubDate>
	<description><![CDATA[SM4807PRL is a high-performance P+P channel MOSFET, packaged in standard SOP-8 format, designed to provide strong power control capabilities for modern electronic devices. Its main characteristics include a maximum working voltage of up to 30V VDSS, which can continuously handle 5.3A drain current, ensuring stable and efficient current transmission; The conduction resistance RD (on) is as low as 35m R, effectively reducing system losses and improving energy efficiency. Widely used in scenarios such as power conversion, motor drive, battery management systems, etc., it is an ideal MOSFET solution for your pursuit of high integration and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[AO4801A(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4801a-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:36:14</pubDate>
	<description><![CDATA[AO4801A is a high-performance P+P channel MOSFET, packaged in SOP-8, designed to provide efficient power control for various electronic devices. Key parameters include a maximum working voltage of up to 30V VDSS, support for 5.3A continuous drain current, and ensuring strong current processing capability; The conduction resistance RD (on) is as low as 35m R, which helps to reduce energy consumption and improve system efficiency. Widely used in power conversion, motor drive, load switch control and other fields, it is the ideal MOSFET choice for achieving energy-saving and high-performance design solutions.]]></description>
</item>
<item>
	<title><![CDATA[DMP3056LSD(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp3056lsd-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:36:01</pubDate>
	<description><![CDATA[DMP3056LSD is a high-performance P+P channel MOSFET, packaged in SOP-8 format, particularly suitable for high-density electronic circuit design. The main characteristics of this device include a maximum operating voltage VDSS of 30V, which can withstand 5.3A continuous drain current, ensuring stable power supply; Its conduction resistance RD (on) is as low as 35m R, which helps to reduce system power consumption and improve overall energy efficiency. Widely used in power conversion, motor drive, battery management systems and other scenarios, it is an ideal MOSFET solution for building efficient and energy-saving electronic products.]]></description>
</item>
<item>
	<title><![CDATA[AO4803A(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4803a-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:35:48</pubDate>
	<description><![CDATA[AO4803A is a high-performance P+P channel MOSFET, packaged in standard SOP-8, suitable for various electronic devices. The key characteristics of this device include a maximum operating voltage VDSS of up to 30V, which can provide a stable 5.3A drain current; Its 35m R conduction resistance RD (on) design effectively reduces system power consumption and achieves efficient operation. Widely used in power management, motor drive, load switch control and other fields, it is the ideal MOSFET choice for building high reliability and energy-saving electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[DMG2301L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg2301l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:35:36</pubDate>
	<description><![CDATA[DMG2301L is an efficient P-channel MOSFET, designed in a space saving SOT-23 package, particularly suitable for low-power and compact electronic designs. The key features of the product include a withstand voltage level of up to 20V VDSS, which can withstand a continuous drain current of 2.3A, demonstrating excellent current processing capabilities. Its conduction resistance RD (on) is as low as 95mR, effectively reducing power consumption and improving system energy efficiency. DMG2301L MOSFET is widely used in power switching, battery protection, portable device circuit design, and other fields due to its excellent switching performance, compact size, and stable operating performance. It is the ideal semiconductor component choice in your design.]]></description>
</item>
<item>
	<title><![CDATA[CSD25402Q3A(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/csd25402q3a-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:35:24</pubDate>
	<description><![CDATA[The CSD25402Q3A P-channel MOSFET adopts a sophisticated DFN3X3-8L packaging to achieve efficient space utilization. This device has a rated voltage of 20V VDSS and can withstand continuous drain current ID of up to 48A, demonstrating strong current processing capabilities. Its core advantage lies in its ultra-low conduction resistance RD (on) of only 7.5m R, significantly improving system energy efficiency and reducing power loss. This MOSFET is widely used in various application scenarios such as power switching and battery protection. With excellent performance and compact packaging design, CSD25402Q3A has become an ideal semiconductor choice for high-power density applications.]]></description>
</item>
<item>
	<title><![CDATA[CSD17304Q3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/csd17304q3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:35:12</pubDate>
	<description><![CDATA[The CSD17304Q3 model MOS transistor adopts cutting-edge DFN3X3-8L packaging technology, which is compact and has excellent heat dissipation. This N-channel MOSFET has a peak voltage tolerance of 30V and can safely and stably carry a drain current of up to 100A, demonstrating excellent power transmission performance. Its conduction resistance is only 4m R, significantly enhancing the circuit‘s energy efficiency and reducing energy loss. Widely suitable for high-intensity application scenarios such as high current switching power supplies, fast charging modules, and motor drive systems, it is an ideal semiconductor component for building efficient and low-energy systems.]]></description>
</item>
<item>
	<title><![CDATA[BUK9277-55A(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/buk9277-55a-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:34:59</pubDate>
	<description><![CDATA[BUK9277-55A MOSFET is a high-quality N-channel MOSFET, packaged in a compact TO-252-2L package, with excellent heat dissipation performance and space saving advantages. At a maximum drain source voltage of 60V (VDSS), it can withstand continuous drain current (ID) of up to 20A, providing sufficient power support for high-power applications. Its ultra-low conduction resistance of 27m R significantly improves system efficiency and reduces energy loss. Widely used in power conversion, motor drive and other projects, it is the trusted choice for engineers to design efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[BUK92150-55A(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/buk92150-55a-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:34:47</pubDate>
	<description><![CDATA[BUK92150-55A MOSFET is a high-performance N-channel device, packaged in TO-252-2L, with excellent heat dissipation and space utilization. This device can provide a stable 20A drain current (ID) at a maximum drain source voltage (VDSS) of 60V, suitable for high-power applications. Its eye-catching 27m R on resistance effectively improves system energy efficiency and reduces power consumption. Widely used in circuit design such as switch mode power supplies and motor drives, it is the preferred component for engineers to create efficient and reliable electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[BSS215PH6327XTSA1(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss215ph6327xtsa1-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:34:35</pubDate>
	<description><![CDATA[The P-channel MOSFET with model BSS215PH6327XTSA1 adopts a miniaturized SOT-23 package, providing an ideal solution for modern compact electronic design. This device has excellent electrical performance, with a maximum operating voltage of VDSS up to 20V and a continuous current ID capable of carrying 2.3A, suitable for medium and low voltage applications. The conduction resistance RD (on) is only 95mR, which helps to reduce power loss and improve overall energy efficiency. Widely used in power conversion, load switching, logic level converters and other fields, it is a selected MOSFET device for engineers to build efficient and energy-saving electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[BSS215P(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss215p-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:34:23</pubDate>
	<description><![CDATA[The BSS215P P-channel MOSFET adopts a compact SOT-23 package, designed specifically for high-efficiency and low-power electronic devices. This device has excellent electrical performance, with a maximum operating voltage VDSS of 20V, a sustainable processing current ID of up to 2.3A, and an ultra-low conduction resistance RD (on) of 95mR, ensuring significant energy conservation and consumption reduction in high-speed switching and high current applications. Widely used in power conversion, load switching, motor drive and other scenarios, BSS215P has become an indispensable component in your circuit design with stable quality and excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[BSH205G2R(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsh205g2r-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:34:10</pubDate>
	<description><![CDATA[BSH205G2R is a P-channel MOSFET designed for efficient and compact circuits using a small SOT-23 package. This device has a rated drain source voltage of 20V (VDSS), can withstand continuous drain current (ID) of up to 2.3A, and has excellent conductivity. The conductivity resistance is as low as 120mR, which is beneficial for reducing power consumption and improving system efficiency. Widely used in power management, load switch control, low voltage and high current logic conversion and other fields, it is an ideal semiconductor component for optimizing circuit design.]]></description>
</item>
<item>
	<title><![CDATA[BSH205G2A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsh205g2a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:33:58</pubDate>
	<description><![CDATA[The P-channel MOSFET of model BSH205G2A adopts a small SOT-23 package, which is particularly suitable for the miniaturization needs of modern electronic devices. This device has robust electrical performance, with a maximum operating voltage VDSS of 20V and a continuous current ID of up to 2.3A, making it suitable for medium to low voltage and high current application environments. Its conduction resistance RD (on) is 95mR, which helps to reduce power loss and improve system efficiency. Widely used in circuit design such as power conversion, load switch control, logic level converters, etc., it is an ideal MOSFET component for engineers seeking efficient and low-energy solutions.]]></description>
</item>
<item>
	<title><![CDATA[AUIRLR024N(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/auirlr024n-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:33:45</pubDate>
	<description><![CDATA[AUIRLR024N is a high-performance N-channel MOSFET designed for high demand applications, using an efficient heat dissipation TO-252-2L package. Under the condition of maximum drain source voltage (VDSS) of 60V, it can continuously output a drain current (ID) of 20A, especially suitable for high-voltage and high current scenarios. The low conduction resistance of 27m R ensures efficient operation of the system and reduces energy consumption. Widely used in power conversion, motor drive and other fields, it is an ideal semiconductor component for building high-quality and energy-saving electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[IRLR024NTRPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlr024ntrpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:33:33</pubDate>
	<description><![CDATA[IRLR024NTRPBF is a high-performance N-channel MOSFET designed for compact and efficient circuits, packaged in TO-252-2L. This device provides a rated voltage of 60V VDSS and a powerful 20A continuous current ID, ensuring excellent power transmission performance. Of particular note, its excellent conduction resistance RD (on) is as low as 27m R, greatly reducing internal power consumption of the system and improving overall energy efficiency. It is your ideal semiconductor component choice for achieving power management and optimizing circuit performance.]]></description>
</item>
<item>
	<title><![CDATA[BUK72150-55A(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/buk72150-55a-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:33:21</pubDate>
	<description><![CDATA[The N-channel MOSFET with model BUK72150-55A is designed in a compact TO-252-2L package for efficient power management and motor drive. This device supports a rated voltage of up to 60V VDSS and can stably carry 20A continuous current ID, ensuring stable operation in high voltage and high current environments. Its uniqueness lies in its conduction resistance RD (on) of only 27m R, which effectively improves system efficiency and reduces power consumption.]]></description>
</item>
<item>
	<title><![CDATA[SUD23N06-31(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sud23n06-31-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:33:08</pubDate>
	<description><![CDATA[The N-channel MOSFET of model SUD23N06-31 adopts the standard TO-252-2L packaging, providing excellent switching performance for high-power electronic devices. This device has a rated voltage of 60V VDSS and a continuous current ID carrying capacity of up to 20A, ensuring stable operation in high-voltage and high current applications. Its excellent conduction resistance RD (on) is only 27m R, which helps to improve system energy efficiency and reduce power consumption. Widely used in scenarios such as power conversion, motor drive, and switching power supply modules, it is an ideal semiconductor component for creating efficient and energy-saving electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[RFD16N05LS(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/rfd16n05ls-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:32:56</pubDate>
	<description><![CDATA[The N-channel MOSFET of model RFD16N05LS adopts a compact TO-252-2L package, designed specifically for high power density and efficiency optimization. This device supports a rated voltage of 60V VDSS and has a continuous current ID carrying capacity of 20A, ensuring stable operation in high-voltage and high current systems. Its internal conduction resistance RD (on) is as low as 27m R, which helps to improve energy efficiency and reduce heat loss. Widely used in power conversion, motor drive, battery management systems and other fields, it is an ideal semiconductor component for achieving efficient and energy-saving electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRLR2705PBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlr2705pbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:32:44</pubDate>
	<description><![CDATA[The N-channel MOSFET of model IRLR2705PBF adopts the industry standard TO-252-2L packaging, suitable for various high-efficiency power control and motor drive applications. This device provides a rated voltage of 60V VDSS and can safely and stably handle continuous current IDs up to 20A. Its conduction resistance RD (on) is as low as 27m R, which is beneficial for improving system efficiency and reducing energy waste. This MOSFET is widely used in power converters, motor drives, charging devices, and other fields due to its excellent performance and reliability. It is the preferred component for building high-performance electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRFR4105PBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr4105pbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:32:32</pubDate>
	<description><![CDATA[The N-channel MOSFET of IRFR4105PBF, packaged in TO-252-2L, is suitable for a wide range of power management and motor drive applications. This device has a rated voltage of 60V VDSS and a continuous current ID processing capability of 20A, ensuring stable operation under high voltage conditions. Its conduction resistance RD (on) is only 27m R, which helps to improve the overall system energy efficiency and reduce power loss. This MOSFET is widely used in power conversion, inverters, and electric tools due to its excellent performance, making it an ideal component for high-performance electronic design.]]></description>
</item>
<item>
	<title><![CDATA[BUK7230-55A(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/buk7230-55a-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:32:19</pubDate>
	<description><![CDATA[The N-channel MOSFET with model BUK7230-55A adopts a compact TO-252-2L package, designed specifically for high-power density applications. The device supports a rated voltage of up to 60V VDSS and can safely carry 20A continuous current ID, ensuring stable operation under high voltage and current conditions. Its characteristic lies in having a lower conduction resistance RD (on) value of only 27m R, which helps to improve overall system efficiency and reduce energy loss. This MOSFET is widely used in various fields such as power conversion, motor drive, and switching power supply, making it an ideal choice for creating efficient and energy-saving electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[STD20NF06T4(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/std20nf06t4-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:32:07</pubDate>
	<description><![CDATA[The N-channel MOSFET of model STD20NF06T4 adopts a standard TO-252-2L package, designed specifically for high-power applications. This device supports a rated voltage of 60V VDSS and can withstand continuous current IDs up to 20A, ensuring stable operation in high current scenarios. Its conduction resistance RD (on) is as low as 27m R, which helps to improve system energy efficiency and reduce power consumption. This MOSFET is suitable for power conversion, motor drive, fast switch control, and other applications, and is one of the core components for building efficient and energy-saving electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[STD20NF06L(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/std20nf06l-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:31:55</pubDate>
	<description><![CDATA[The N-channel MOSFET with model STD20NF06L adopts the classic TO-252-2L packaging form, which is suitable for various circuit design needs. This device has a high rated voltage VDSS of 60V and a strong current carrying capacity of 20A, which can maintain stable performance in high voltage environments. Its conduction resistance RD (on) is only 27m R, effectively improving power conversion efficiency and reducing power consumption. This MOSFET is widely used in power conversion, motor drive, high-frequency switch and other fields, and is an ideal semiconductor component for achieving efficient electronic device design.]]></description>
</item>
<item>
	<title><![CDATA[NTD24N06(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntd24n06-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:31:42</pubDate>
	<description><![CDATA[The N-channel MOSFET with model NTD24N06 adopts TO-252-2L packaging, designed specifically for electronic devices that require high voltage and high current control. This device provides a rated voltage of 60V VDSS and can sustain a current of 20A ID, ensuring stable operation in high-voltage working environments. Its outstanding feature lies in having a conduction resistance RD (on) as low as 27m R, effectively improving power conversion efficiency and reducing energy consumption. Widely used in power converters, motor drives, switching power supplies, battery management systems, and other fields, it is an ideal semiconductor component for achieving high energy efficiency control.]]></description>
</item>
<item>
	<title><![CDATA[DMN6040SK3(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn6040sk3-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:31:30</pubDate>
	<description><![CDATA[The N-channel MOSFET of model DMN6040SK3 adopts TO-252-2L packaging, designed specifically for efficient power management and motor drive. This device has a rated voltage of 60V VDSS and a continuous current ID carrying capacity of 20A, ensuring stability and reliability in high-voltage applications. Its highlight lies in the fact that the conduction resistance RD (on) is as low as 27m R, effectively reducing power consumption and improving system energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[DMC4029SK4(TO-252-4L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmc4029sk4-to-252-4l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:31:18</pubDate>
	<description><![CDATA[The N+P channel MOSFET of model DMC4029SK4 adopts a durable and universal TO-252-4L package, suitable for various electronic devices. This device has a rated voltage of 40V VDSS and can withstand continuous current IDs up to 20A, ensuring stable operation in high voltage and high current environments. Its excellence lies in its low conduction resistance RD (on) of only 18m R, which greatly improves energy conversion efficiency and reduces power loss. This MOSFET is suitable for power conversion, motor drive, battery management systems, and other fields, making it an ideal choice for achieving efficient power control.]]></description>
</item>
<item>
	<title><![CDATA[IRF7104PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7104pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:31:06</pubDate>
	<description><![CDATA[The P+P channel MOSFET of model IRF7104PBF adopts SOP-8 packaging, which is suitable for standardized installation of various electronic devices. This device has a rated voltage of 20V VDSS and can carry 3A continuous current ID, ensuring efficient and stable operation under medium voltage and current conditions. Its conduction resistance RD (on) is 85m R, which is relatively high but can still meet the requirements of some mid to low frequency switch applications. This MOSFET is commonly used in power management, load switching, inverters, and other scenarios that require power switching, and is one of the practical components for designing reliable electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[TPS1120(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/tps1120-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:30:53</pubDate>
	<description><![CDATA[The P+P channel MOSFET of model TPS1120 adopts the common SOP-8 packaging form and is compatible with various mainstream circuit board designs. This device has a rated voltage of 20V VDSS and can provide a continuous current ID of up to 3A, ensuring stable performance in medium and low voltage applications. The conduction resistance RD (on) of 85m R makes the MOSFET exhibit good energy efficiency performance in power management, load switching control, and other aspects. This device has become an ideal choice for many electronic device designs due to its reliable performance and wide range of applications.]]></description>
</item>
<item>
	<title><![CDATA[DMN3009LFVW(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn3009lfvw-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:30:41</pubDate>
	<description><![CDATA[The N-channel MOSFET of model DMN3009LFVW adopts DFN3X3-8L micro package, designed specifically for high-density and high-performance electronic devices. This device provides a rated voltage of 30V VDSS and can withstand continuous currents of up to 100A, ensuring stable performance even under high current operation. Its core advantage lies in its ultra-low conduction resistance RD (on) of only 4m R, which effectively improves system efficiency and reduces energy consumption. It is suitable for various application scenarios such as power conversion, motor drive, load switch, etc. It is a high-quality semiconductor component for creating high-energy efficiency electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[MDV1542(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/mdv1542-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:30:29</pubDate>
	<description><![CDATA[The N-channel MOSFET of model MDV1542 adopts a compact DFN3X3-8L packaging process, which is particularly suitable for high-density circuit board layout and limited space application scenarios. This device has a rated voltage of 30V VDSS and can stably transmit continuous currents up to 100A, demonstrating excellent power processing performance. Its highlight lies in its ultra-low conduction resistance RD (on) of only 4m R, which greatly improves system energy efficiency and reduces power consumption. It is widely used in power conversion, motor drive, battery management systems and other fields, making it an ideal semiconductor component choice for building efficient and energy-saving electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BSZ0904NSI(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsz0904nsi-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:30:17</pubDate>
	<description><![CDATA[BSZ0904NSI is a high-strength N-channel MOSFET, packaged in a compact DFN3X3-8L package, particularly suitable for the layout requirements of high-density electronic products. Its core technical indicators include a maximum drain source voltage (VDSS) of 30V and a peak drain current (ID) of up to 100A, demonstrating ultra strong current processing capability; And the excellent conduction resistance is only 4m R (RD (on)), ensuring low loss performance under high current operating conditions. This MOSFET is very suitable for applications in fields such as power conversion, fast charging, and high current switching control that require strict efficiency and stability.]]></description>
</item>
<item>
	<title><![CDATA[FDMC8854(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdmc8854-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:30:04</pubDate>
	<description><![CDATA[The N-channel MOSFET of model FDMC8854 adopts modern DFN3X3-8L packaging, with a compact body that meets various compact circuit design requirements. This device has strong performance, with a rated voltage VDSS of up to 30V and a continuous current ID of up to 100A, demonstrating excellent stability even in high voltage and high current environments. Its eye-catching feature is its extremely low conduction resistance RD (on) of only 4m R, which greatly improves the overall energy efficiency of the system, reduces losses, and is widely used in many fields such as power conversion, motor drive, and fast switch control. It is an ideal semiconductor component choice for creating high-performance electronic products.]]></description>
</item>
<item>
	<title><![CDATA[FDMC8651(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdmc8651-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:29:52</pubDate>
	<description><![CDATA[The N-channel MOSFET of model FDMC8651 is presented in a compact DFN3X3-8L package, designed specifically for the miniaturization and high-performance requirements of modern electronic products. This device has powerful functions, with a rated voltage of up to 30V VDSS, and can carry a maximum continuous current ID of 100A, ensuring stable operation under high load conditions. Its highlight lies in its ultra-low conduction resistance RD (on) of only 4m R, which effectively improves power conversion efficiency and reduces power consumption. It is an ideal choice for power management, high-speed switching circuits, motor drives, and other fields, helping you easily achieve high-performance circuit design.]]></description>
</item>
<item>
	<title><![CDATA[DMN3008SFG(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn3008sfg-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:29:40</pubDate>
	<description><![CDATA[The DMN3008SFG MOSFET is an efficient N-channel semiconductor device that uses a space saving DFN3X3-8L package, making it particularly suitable for high-density circuit board design. It has powerful electrical parameters, with a rated voltage VDSS of up to 30V, and can withstand continuous current ID of up to 100A, ensuring stability in high current application scenarios. Especially outstanding is its ultra-low conduction resistance RD (on) of only 4m R, effectively reducing energy consumption and significantly improving system efficiency. It is suitable for diverse fields such as power conversion, motor drive, and fast switching, making it your ideal circuit solution.]]></description>
</item>
<item>
	<title><![CDATA[PSMN4R3-30BL(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/psmn4r3-30bl-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:29:27</pubDate>
	<description><![CDATA[This MOSFET model is PSMN4R3-30BL, which adopts an efficient N-channel design and is packaged in a compact TO-252-2L format, suitable for various circuit board space requirements. Its core parameters are excellent, with a rated voltage VDSS of up to 30V and a continuous current ID of up to 100A, ensuring a stable workflow. Especially outstanding is that its conduction resistance is only 3.8m R, effectively reducing power consumption and improving system efficiency, making it an ideal choice for applications such as power conversion and motor drive.]]></description>
</item>
<item>
	<title><![CDATA[IPD050N03LG(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ipd050n03lg-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:29:15</pubDate>
	<description><![CDATA[IPD050N03LG is an N-channel MOSFET designed for high-power, high current applications in a TO-252-2L package. This device has a drain source voltage of 30V (VDSS) and can withstand a drain current (ID) of up to 100A at an ultra-low on resistance (RD (on) of 3.8mR. Widely used in switch mode power supplies, motor drives, fast chargers and other fields, it has become an ideal semiconductor component for improving system performance and reducing energy consumption due to its excellent current processing ability and high energy efficiency performance.]]></description>
</item>
<item>
	<title><![CDATA[STN8882D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/stn8882d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:29:03</pubDate>
	<description><![CDATA[STN8882D is a high-performance N-channel MOSFET, designed for high current and low impedance applications using standard TO-252-2L packaging. The device supports a drain source voltage of 30V (VDSS) and can carry a drain current (ID) of up to 100A under an extremely excellent 3.8mR on resistance (RD (on)). Widely used in scenarios such as switch mode power supplies, motor drives, and battery management systems, it has become an ideal semiconductor component for optimizing system performance and reducing energy consumption due to its excellent current carrying capacity and efficient performance.]]></description>
</item>
<item>
	<title><![CDATA[SM514T9RL(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm514t9rl-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:28:51</pubDate>
	<description><![CDATA[SM514T9RL is a high-performance N-channel MOSFET designed for high-power, high current applications in a TO-252-2L package. The device provides a drain source voltage of 30V (VDSS) and can withstand a drain current (ID) of up to 100A at an ultra-low on resistance (RD (on) of 3.8mR. Widely used in the fields of switching power supply conversion, motor drive, energy storage systems, etc., with its excellent current processing ability and efficient performance, it has become an ideal semiconductor component for optimizing system performance and reducing energy consumption.]]></description>
</item>
<item>
	<title><![CDATA[SM4146T9RL(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm4146t9rl-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:28:38</pubDate>
	<description><![CDATA[SM4146T9RL is a high-performance N-channel MOSFET designed for high current, low loss applications in a TO-252-2L package. This device has a drain source voltage of 30V (VDSS) and can withstand a drain current (ID) of up to 100A at an ultra-low on resistance (RD (on) of 3.8mR. Widely used in fields such as switching power supplies, motor drives, battery management systems, etc., with its excellent current carrying capacity and energy efficiency performance, it has become an ideal semiconductor component for optimizing system performance, energy conservation and consumption reduction.]]></description>
</item>
<item>
	<title><![CDATA[IRLR8726PBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlr8726pbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:26:22</pubDate>
	<description><![CDATA[IRLR8726PBF is an N-channel MOSFET designed in a TO-252-2L package for high power density and high current applications. The device has a drain source voltage of 30V (VDSS) and can carry a drain current (ID) of up to 100A at an extremely low on resistance of 3.8mR (RD (on)). Widely used in fields such as switching power supplies, it has become an ideal semiconductor component choice for improving system performance and energy efficiency due to its excellent current processing ability and high efficiency performance.]]></description>
</item>
<item>
	<title><![CDATA[AOD516(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod516-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:26:09</pubDate>
	<description><![CDATA[AOD516 is a high-performance N-channel MOSFET designed in a TO-252-2L package for high current, low impedance applications. The device provides a drain source voltage of 30V (VDSS) and can easily carry a drain current (ID) of up to 100A under an ultra-low on resistance (RD (on) of 3.8mR. Widely used in fields such as switching power supplies, battery management systems, and motor drives, with its excellent current carrying capacity and excellent energy efficiency performance, it is an ideal semiconductor component for improving system performance and reducing energy consumption.]]></description>
</item>
<item>
	<title><![CDATA[SI7114DN-T1-E3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7114dn-t1-e3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:25:57</pubDate>
	<description><![CDATA[SI7114DN-T1-E3 is an N-channel MOSFET designed for high power density and high efficiency applications in a compact DFN3X3-8L package. The device has a drain source voltage of 30V (VDSS) and can withstand a drain current (ID) of up to 60A under conditions as low as 6mR conduction resistance (RD (on)). Widely used in scenarios such as switching power supplies and high-power chargers, it has become an important semiconductor component for optimizing system performance and energy efficiency with its excellent current processing ability and energy efficiency performance.]]></description>
</item>
<item>
	<title><![CDATA[RQ3E130MN(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/rq3e130mn-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:25:45</pubDate>
	<description><![CDATA[RQ3E130MN is a high-performance N-channel MOSFET designed for high current, low impedance applications using a miniaturized DFN3X3-8L package. The device provides a drain source voltage of 30V (VDSS) and can withstand a drain current (ID) of up to 60A under an ultra-low on resistance (RD (on) of 6mR. Widely used in switch mode power supplies, battery management systems, motor drives, and other fields, with its excellent current carrying capacity and excellent energy efficiency performance, it is an ideal semiconductor component for optimizing system efficiency and reducing energy consumption.]]></description>
</item>
<item>
	<title><![CDATA[IRFH3702PBF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfh3702pbf-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:25:33</pubDate>
	<description><![CDATA[IRFH3702PBF is a high-performance N-channel MOSFET that uses a compact DFN3X3-8L package to meet modern miniaturization circuit design requirements. It has a maximum drain source withstand voltage (VDSS) of 30V, strong transient response capability, and can continuously provide up to 60A drain current (ID). Especially outstanding is that the conduction resistance is only 6m R (RD (on)), significantly reducing power loss and ensuring efficient performance even in high current operating environments. This product is widely used in power conversion, motor drive, high-frequency switch and other fields, providing strong power support for high-end electronic products.]]></description>
</item>
<item>
	<title><![CDATA[FDMC7680(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdmc7680-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:25:20</pubDate>
	<description><![CDATA[FDMC7680 is a high-performance N-channel MOSFET designed specifically for high-density circuit boards, using an ultra small DFN3X3-8L package. Its key features include a maximum drain source voltage of 30V (VDSS) and the ability to provide an astonishing 60A continuous drain current (ID) under harsh conditions, demonstrating powerful power processing capabilities. More noteworthy is that its conduction resistance is only 6m R (RD (on)), ensuring low power loss even during high current transmission. This MOSFET is widely used in power conversion, fast charging technology, high current switching circuits, and other fields, making it an ideal choice for engineers pursuing efficient design.]]></description>
</item>
<item>
	<title><![CDATA[AON7380(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon7380-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:25:08</pubDate>
	<description><![CDATA[AON7380 is a high-performance N-channel MOSFET designed with advanced DFN3X3-8L packaging for high current and low loss applications. The device has a drain source voltage of 30V (VDSS) and can withstand a drain current (ID) of up to 60A at an ultra-low on resistance (RD (on) of only 6mR. Widely used in power conversion, motor drive, battery management systems and other fields, its excellent current processing ability and energy efficiency performance make it an ideal semiconductor component for optimizing system performance and reducing energy consumption.]]></description>
</item>
<item>
	<title><![CDATA[DMG9926UDM(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg9926udm-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:24:56</pubDate>
	<description><![CDATA[DMG9926UDM is an N+N channel MOSFET designed for high efficiency and small-sized circuits in a compact SOT-23-6L package. The device provides a drain source voltage of 20V (VDSS), and each channel can carry up to 6A of drain current (ID) at a conduction resistance of 22mR (RD (on)). Widely used in DC-DC converters, multi load switches, power management and other fields, with its excellent current processing ability and dual channel design, it greatly improves system performance and integration.]]></description>
</item>
<item>
	<title><![CDATA[STP9527(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/stp9527-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:24:43</pubDate>
	<description><![CDATA[STP9527 is a P-channel MOSFET designed with SOP-8 packaging for high current, high-efficiency electronic devices. This device has a drain source voltage of 40V (VDSS) and can easily handle drain current (ID) up to 13A at a low on resistance (RD (on) of 14mR. Widely used in power conversion, motor drive, load switch and other applications, STP9527 has become an ideal semiconductor component for optimizing system performance, energy conservation and consumption reduction due to its excellent current carrying capacity and excellent energy efficiency performance.]]></description>
</item>
<item>
	<title><![CDATA[SI4447DY-T1-E3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4447dy-t1-e3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:24:31</pubDate>
	<description><![CDATA[SI4447DY-T1-E3 is a high-performance P-channel MOSFET designed for high-power and high-efficiency applications using SOP-8 packaging. The device has a drain source voltage of 40V (VDSS) and can safely carry a drain current (ID) of up to 13A at a conduction resistance of only 14mR (RD (on)). Widely used in power conversion, motor drive, battery management systems and other scenarios, this MOSFET, with its excellent current processing ability and excellent energy efficiency performance, becomes a key component for improving system efficiency and energy conservation.]]></description>
</item>
<item>
	<title><![CDATA[DMP4050SSS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp4050sss-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:24:19</pubDate>
	<description><![CDATA[DMP4050SSS is a P-channel MOSFET designed with SOP-8 packaging, specifically for high-power and high-performance circuits. This device provides a drain source voltage of 40V (VDSS) and can support up to 13A drain current (ID) at an ultra-low on resistance (RD (on) of 14mR. Widely used in power management, motor drives, inverters and other fields, this MOSFET has become a key semiconductor component for optimizing system performance and energy conservation due to its excellent current carrying capacity and excellent energy efficiency performance.]]></description>
</item>
<item>
	<title><![CDATA[AO4443(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4443-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:24:07</pubDate>
	<description><![CDATA[AO4443 is a P-channel MOSFET, packaged in SOP-8 format, suitable for high-power and high-efficiency electronic devices. The device has a drain source voltage of 40V (VDSS) and can provide a drain current of 13A (ID) in a conducting state, while maintaining a conducting resistance as low as 14mR (RD (on)). Widely used in power conversion, motor drive, load switch and other fields, with excellent current carrying capacity and excellent energy efficiency performance, it becomes an ideal semiconductor component for optimizing system performance, energy conservation and consumption reduction.]]></description>
</item>
<item>
	<title><![CDATA[IRF7241PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7241pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:23:54</pubDate>
	<description><![CDATA[IRF7241PBF is a P-channel MOSFET designed with SOP-8 packaging for high current and high-performance applications. The device provides a drain source voltage of 40V (VDSS) and can carry a drain current (ID) of up to 13A at a low on resistance (RD (on) of 14mR. Widely used in power conversion, motor drive, battery management systems and other fields, with its powerful current processing ability and excellent energy efficiency performance, it becomes an ideal semiconductor component for optimizing system performance and reducing energy consumption.]]></description>
</item>
<item>
	<title><![CDATA[FDS4685(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds4685-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:23:42</pubDate>
	<description><![CDATA[The FDS4685 P-channel MOSFET adopts SOP-8 packaging, designed specifically for high-power and high-efficiency applications. This device has a drain source voltage of 40V (VDSS) and can support a continuous drain current (ID) of up to 13A at an ultra-low on resistance (RD (on) of 14mR. Widely used in power management, inverters, motor drives and other fields, with its excellent current processing ability and excellent energy efficiency performance, it is an ideal choice for optimizing system performance and energy conservation and consumption reduction.]]></description>
</item>
<item>
	<title><![CDATA[FDN339AN(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdn339an-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:23:29</pubDate>
	<description><![CDATA[FDN339AN is an N-channel MOSFET designed for high-performance electronics using a space saving SOT-23-3L package. This device has a drain source voltage of 20V (VDSS) and can easily carry a drain current (ID) of up to 6A at a conduction resistance of only 18mR (RD (on)). Widely used in the fields of switching power supply conversion, motor drive, fast switching circuits, etc., with its excellent current carrying capacity and excellent energy efficiency performance, it becomes an ideal semiconductor component for optimizing system design and improving overall efficiency.]]></description>
</item>
<item>
	<title><![CDATA[SSM3K345R(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ssm3k345r-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:23:17</pubDate>
	<description><![CDATA[The SSM3K345R N-channel MOSFET adopts a miniaturized SOT-23-3L package, providing an ideal solution for efficient and compact electronic design. This device has a drain source voltage of 20V (VDSS) and can support up to 6A drain current (ID) at an ultra-low on resistance (RD (on) of 18mR. Widely used in scenarios such as switching power supplies, DC-DC converters, and motor drives, it has become an ideal semiconductor component for improving system performance and energy efficiency due to its excellent current processing ability and energy efficiency performance.]]></description>
</item>
<item>
	<title><![CDATA[SM2312SRL(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm2312srl-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:23:05</pubDate>
	<description><![CDATA[The SM2312SRL N-channel MOSFET adopts a compact SOT-23-3L package, designed specifically for efficient and compact circuits. The device has a drain source voltage of 20V (VDSS) and can stably output a drain current (ID) of up to 6A under a low on resistance (RD (on) of 18mR. Suitable for applications such as switching power supplies, motor drives, and high-frequency switching circuits, this MOSFET has become an ideal semiconductor component for optimizing system performance and reducing energy consumption due to its excellent current carrying capacity and excellent energy efficiency performance.]]></description>
</item>
<item>
	<title><![CDATA[ST2300(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/st2300-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:22:53</pubDate>
	<description><![CDATA[The ST2300 N channel MOSFET adopts a compact SOT-23-3L package, designed specifically for high efficiency and miniaturization circuits. This device has a drain source voltage of 20V (VDSS) and can withstand a maximum drain current (ID) of 6A under ultra-low on resistance (RD (on) conditions of 18mR. Suitable for applications such as switching power supply conversion, motor drive, load switching, etc., ST2300 is an ideal semiconductor component for optimizing system performance with its powerful current processing ability and excellent energy efficiency performance.]]></description>
</item>
<item>
	<title><![CDATA[FDN028N20(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdn028n20-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:22:40</pubDate>
	<description><![CDATA[FDN028N20 N-channel MOSFET adopts a miniaturized SOT-23-3L package, designed specifically for modern high-density electronics. The device provides a drain source voltage of 20V (VDSS) and can withstand a drain current (ID) of up to 6A at a low on resistance (RD (on) of 18mR. This MOSFET is suitable for switching power supply conversion, motor drive, and other high current applications. With its excellent current carrying capacity and excellent energy efficiency performance, it is the ideal choice for you to improve system performance and reduce energy consumption.]]></description>
</item>
<item>
	<title><![CDATA[BSR802N(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsr802n-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:22:27</pubDate>
	<description><![CDATA[The BSR802N N-channel MOSFET adopts a compact SOT-23-3L package, designed specifically for high power density and high-efficiency circuits. The device has a drain source voltage of 20V (VDSS) and can support continuous drain current (ID) of up to 6A at a conduction resistance of as low as 18mR (RD (on)). This MOSFET is suitable for scenarios such as switching power supplies, DC/DC converters, and motor drives. With its excellent current processing ability and efficient performance, it is an ideal choice for optimizing system performance.]]></description>
</item>
<item>
	<title><![CDATA[SI2309CDS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2309cds-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:22:15</pubDate>
	<description><![CDATA[SI2309CDS-T1-GE3 is a P-channel MOSFET that uses a compact SOT-23 package, suitable for efficient circuit design with compact space. This device has a rated drain source voltage of 60V (VDSS) and can stably transmit 2A drain current (ID) at a conduction resistance of 160mR (RD (on)). Widely used in power management, battery protection circuits, load switches and other scenarios, with its excellent voltage tolerance and good current control characteristics, it becomes an ideal semiconductor component for improving system efficiency and reliability.]]></description>
</item>
<item>
	<title><![CDATA[NDS0610(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nds0610-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:22:03</pubDate>
	<description><![CDATA[The NDS0610 P-channel MOSFET adopts the popular SOT-23 packaging form, designed for space limited and high-efficiency circuits. This device has a drain source breakdown voltage of 60V (VDSS) and can stably handle a 2A drain current (ID) at a low on resistance of 160mR (RD (on)). Suitable for applications such as battery protection, power switching, and load driving, this MOSFET enhances your circuit performance and reliability with its powerful voltage carrying capacity and precise current control advantages.]]></description>
</item>
<item>
	<title><![CDATA[NDS0605(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nds0605-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:21:50</pubDate>
	<description><![CDATA[The NDS0605 P-channel MOSFET adopts a compact SOT-23 package, designed specifically for high integration circuits. This device has a rated drain source voltage of 60V (VDSS) and can provide a stable 2A drain current (ID) at a conduction resistance of 160mR (RD (on)). Suitable for various application scenarios such as battery protection, power switching, and load driving, this MOSFET is an ideal semiconductor component for improving circuit reliability and efficiency with its excellent high-voltage carrying capacity and efficient current control performance.]]></description>
</item>
<item>
	<title><![CDATA[ZXMP6A13F(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zxmp6a13f-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:21:38</pubDate>
	<description><![CDATA[ZXMP6A13F is a P-channel MOSFET designed in a small SOT-23 package, suitable for various electronic designs with limited space. The device has a drain source voltage of 60V (VDSS), allowing for safe passage of 2A drain current (ID) at a conduction resistance of 160mR (RD (on)). Widely used in power switching, load driving, battery protection and other fields, this MOSFET is an ideal choice for optimizing circuit design and improving system efficiency with its excellent high-voltage withstand ability and low conduction impedance performance.]]></description>
</item>
<item>
	<title><![CDATA[DMP6350S(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp6350s-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:21:26</pubDate>
	<description><![CDATA[The DMP6350S P-channel MOSFET adopts a compact SOT-23 package, designed specifically for high-efficiency and low-power electronics. The device supports a drain source voltage (VDSS) of up to 60V and can carry a stable 2A drain current (ID) with a conduction resistance of 160mR (RD (on)). This MOSFET is widely used in power switches, battery management systems, reverse current protection and other functional modules. Its excellent voltage endurance and precise current control performance provide you with a higher quality solution for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[FDN537N(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdn537n-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:21:13</pubDate>
	<description><![CDATA[FDN537N is an N-channel MOSFET designed for modern high-power density electronics in a compact SOT-23 package. This device has a drain source voltage of 30V (VDSS), can withstand a maximum drain current of 5.8A (ID), and has excellent conductivity performance, with a conductivity resistance as low as 22mR (RD (on)). Widely used in switch mode power supply conversion, motor drive, and various high current and high-efficiency electronic systems, FDN537N has become a reliable choice for circuit designers due to its excellent current processing ability and excellent energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[DMG3404L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg3404l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:21:01</pubDate>
	<description><![CDATA[DMG3404L is a high-performance N-channel MOSFET designed specifically for high-performance electronics, using a miniaturized SOT-23 package. This device has a rated drain source voltage of 30V (VDSS), can withstand continuous drain current (ID) of up to 5.8A, and has excellent low on resistance characteristics, only 22mR (RD (on)). This MOSFET is suitable for switching power supply conversion, high current motor drive, and other high-power applications, committed to improving system efficiency and reducing energy consumption. It is the high-quality semiconductor component choice in your design.]]></description>
</item>
<item>
	<title><![CDATA[Si2338DS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2338ds-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:20:49</pubDate>
	<description><![CDATA[Si2338DS-T1-GE3 is an N-channel MOSFET designed in a compact SOT-23 package, particularly suitable for high-density circuit designs. The device provides a maximum drain source voltage (VDSS) of 30V, has strong current carrying capacity, can continuously handle 5.8A drain current (ID), and has an extremely low 22mR on resistance (RD (on) in the on state, effectively improving power conversion efficiency. This MOSFET is widely used in switching power supplies, motor drives, and other high-power electronic devices, helping to achieve efficient and low loss system solutions.]]></description>
</item>
<item>
	<title><![CDATA[DMN3404L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn3404l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:20:37</pubDate>
	<description><![CDATA[DMN3404L N-channel MOSFET adopts a miniaturized SOT-23 package, designed specifically for high efficiency and small volume circuits. This device provides a high voltage withstand (VDSS) of 30V, capable of carrying a continuous drain current (ID) of up to 5.8A, and has excellent low on resistance performance, only 22mR (RD (on)). This feature makes it excellent in switch mode power supplies, high current motor drives, and various high-performance electronic devices, making it an ideal semiconductor component for optimizing system performance and achieving energy-saving goals.]]></description>
</item>
<item>
	<title><![CDATA[DMN3070SSN(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn3070ssn-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:20:25</pubDate>
	<description><![CDATA[The DMN3070SSN N-channel MOSFET adopts a compact SOT-23 package, providing strong driving force for high-performance electronic devices. This device has a high breakdown voltage of 30V (VDSS) and can withstand a drain current (ID) of up to 5.8A under full load conditions. With its excellent on resistance of 22mR (RD (on)), it achieves excellent power transmission efficiency. This MOSFET is suitable for high-power applications such as switching power supplies and high current motor drives, and is the preferred semiconductor component for improving system efficiency and saving energy.]]></description>
</item>
<item>
	<title><![CDATA[DMN3033LSNQ(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn3033lsnq-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:20:12</pubDate>
	<description><![CDATA[The DMN3033LSNQ N-channel MOSFET adopts a miniaturized SOT-23 package, providing strong power support for modern electronic devices. This device has a high voltage withstand value (VDSS) of 30V, can safely carry a large current of up to 5.8A in a conductive state, and has outstanding low on resistance characteristics - only 22mR (RD (on)). It is very suitable for applications such as switching power supply conversion, high current motor drive, and other situations that require high energy efficiency and stability. It is the ideal semiconductor device for improving system performance and optimizing energy utilization.]]></description>
</item>
<item>
	<title><![CDATA[FDV305N(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdv305n-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:20:00</pubDate>
	<description><![CDATA[The FDV305N N-channel MOSFET is presented in a compact SOT-23 package, designed specifically for high efficiency and small volume applications. It has a maximum drain source voltage of 20V (VDSS), can provide a drain current of 2.3A (ID) in a stable state, and exhibits excellent conductivity performance, with a conductivity resistance of only 48m R (RD (on)). This MOSFET is widely used in power conversion, battery management systems, and various low voltage and low current control scenarios due to its excellent electrical parameters and reliability, achieving precise and efficient circuit control.]]></description>
</item>
<item>
	<title><![CDATA[MVGSF1N02L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/mvgsf1n02l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:19:47</pubDate>
	<description><![CDATA[The MVGSF1N02L N-channel MOSFET adopts a space saving SOT-23-3L package, which is particularly suitable for compact circuit design. This device has a maximum drain source voltage (VDSS) of 20V, can withstand continuous drain current (ID) of up to 2.3A, and exhibits a low on resistance (RD (on) of only 48mR in the on state, ensuring efficient power conversion and low power loss. This MOSFET is widely used in various fields such as switching power supplies, motor drives, intelligent devices, etc. It is an ideal semiconductor component for optimizing system performance and energy conservation and emission reduction.]]></description>
</item>
<item>
	<title><![CDATA[MMBF0201NL(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/mmbf0201nl-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:19:35</pubDate>
	<description><![CDATA[MMBF0201NL N-channel MOSFET adopts a compact SOT-23 package, designed specifically for high-density circuits. The device supports a voltage rating of up to 20V (VDSS) and can stably transmit 2.3A drain current (ID) at a low on resistance of 48mR (RD (on)), achieving excellent power conversion efficiency. This MOSFET is suitable for various applications such as switching power supplies, motor drive control, and portable electronic devices. It is the ideal component for your pursuit of efficient and low-power circuit solutions.]]></description>
</item>
<item>
	<title><![CDATA[IRLML2402PBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml2402pbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:19:23</pubDate>
	<description><![CDATA[The IRLML2402PBF N-channel MOSFET is exquisitely packaged within SOT-23, meeting your high-performance needs with its excellent electrical characteristics. This device can withstand a voltage of up to 20V (VDSS), provide a stable drain current of 2.3A, and exhibit extremely low resistance values in a conductive state, only 48mR (RD (on)). This MOSFET is widely used in switch mode power supply conversion, motor drive, and other high-efficiency electronic systems. With its powerful current processing ability and excellent energy efficiency performance, it is the ideal choice for optimizing system design.]]></description>
</item>
<item>
	<title><![CDATA[IRLML2402GPBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml2402gpbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:19:10</pubDate>
	<description><![CDATA[The IRLML2402GPBF N-channel MOSFET adopts a green and environmentally friendly lead-free SOT-23 packaging process, which has excellent electrical performance. The device operates at a voltage of up to 20V (VDSS), with a maximum continuous drain current of 2.3A, and an ultra-low on resistance of only 48mR (RD (on)), significantly improving energy efficiency and reducing power loss. This MOSFET is suitable for the design of various switch regulators, motor drives, and highly integrated electronic products. With excellent quality and performance, it helps you achieve higher levels of circuit control and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[ST2302(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/st2302-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:18:58</pubDate>
	<description><![CDATA[ST2302 is a high-performance N-channel MOSFET designed for high efficiency and compact electronics, using a small SOT-23 package. This device supports a maximum drain source voltage of 20V (VDSS) and can carry a continuous drain current of 2.3A (ID). Its on resistance (RD) as low as 48m R ensures efficient operation while reducing power consumption. Widely used in power conversion, load switch control, battery management systems and other fields, it is an ideal semiconductor component for achieving energy-saving and miniaturization of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[Si2302DS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2302ds-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:18:46</pubDate>
	<description><![CDATA[Si2302DS is an efficient N-channel MOSFET designed for high energy efficiency and low-power electronic applications using a miniaturized SOT-23 package. The device has a maximum drain source voltage of 20V (VDSS) and can stably carry a continuous drain current of 2.3A (ID). Its 48m R on resistance (RD (on)) ensures excellent energy conversion efficiency even at low power consumption. Widely used in power conversion, load switching, battery protection systems and other fields, it is an ideal semiconductor component for building miniaturized and energy-saving electronic solutions.]]></description>
</item>
<item>
	<title><![CDATA[IRLML2502PBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml2502pbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:18:33</pubDate>
	<description><![CDATA[IRLML2502PBF is a high-performance N-channel MOSFET designed for efficient and miniaturized electronic applications in a compact SOT-23 package. The device provides a maximum drain source voltage (VDSS) of 20V and can withstand a continuous drain current (ID) of 6A. Its excellent 22m R on resistance (RD (on) ensures high energy efficiency even under low power consumption conditions. Widely used in power conversion, motor drive, battery management systems and other fields, it is an ideal semiconductor component for building energy-saving and compact electronic solutions.]]></description>
</item>
<item>
	<title><![CDATA[SM2314SRL(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm2314srl-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:18:21</pubDate>
	<description><![CDATA[SM2314SRL is a high-performance N-channel MOSFET designed for high power density and energy-saving electronic applications, using a miniaturized SOT-23 package. This device supports a maximum drain source voltage (VDSS) of 20V and can withstand a continuous drain current (ID) of 6A. With its on resistance (RD) as low as 22m R, it ensures excellent energy efficiency and low power consumption performance even in high current operating conditions. Widely used in power conversion, motor drive, battery protection and other fields, it is an ideal semiconductor component for creating compact and efficient electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[PMV30UN2R(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/pmv30un2r-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:18:09</pubDate>
	<description><![CDATA[PMV30UN2R is a high-performance N-channel MOSFET designed for efficient and miniaturized electronic devices in a compact SOT-23 package. This device has a maximum drain source voltage of 20V (VDSS), can withstand continuous drain current (ID) of up to 6A, and has an excellent 22m R on resistance (RD (on)), ensuring low power consumption and high efficiency even in high current applications. Widely used in power conversion, motor drive, battery management systems and other fields, it is an ideal semiconductor component for building energy-saving and compact electronic solutions.]]></description>
</item>
<item>
	<title><![CDATA[DMN2041L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn2041l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:17:56</pubDate>
	<description><![CDATA[DMN2041L is a high-performance N-channel MOSFET designed for high power density and low-power applications using a small SOT-23 package. The device provides a maximum drain source voltage (VDSS) of 20V, can withstand a continuous drain current (ID) of 6A, and is equipped with an ultra-low on resistance (RD (on) of 22m R, ensuring excellent energy conversion efficiency and stability. Widely used in scenarios such as power conversion, motor drive, and battery management systems, it is a high-quality semiconductor component for miniaturized and efficient electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[DMG6968U(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg6968u-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:17:44</pubDate>
	<description><![CDATA[DMG6968U is a high-efficiency N-channel MOSFET designed for compact and energy-efficient electronic devices in a small SOT-23 package. This device has a maximum drain source voltage (VDSS) of 20V and can withstand continuous drain current (ID) of up to 6A. Its on resistance (RD) of 22m R ensures excellent energy efficiency performance under low power consumption conditions. Widely used in power management, motor drives, battery protection circuits and other fields, it is an ideal semiconductor component for achieving miniaturization and high-performance electronic solutions.]]></description>
</item>
<item>
	<title><![CDATA[DMG3420U(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg3420u-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:17:31</pubDate>
	<description><![CDATA[DMG3420U is a high-performance N-channel MOSFET designed for high power density and low-power applications using a miniaturized SOT-23 package. This device provides a maximum drain source voltage (VDSS) of 20V and can withstand continuous drain current (ID) of up to 6A. Its excellent 22m R on resistance (RD (on) ensures excellent energy conversion efficiency. Widely used in power conversion, motor drive, battery management systems and other fields, it is an ideal semiconductor component for building compact and efficient electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[AO3403(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3403-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:17:19</pubDate>
	<description><![CDATA[AO3403 is an efficient P-channel MOSFET designed for efficient and miniaturized electronic applications in a compact SOT-23-3L package. This device supports a maximum drain source voltage of 30V (VDSS), can withstand continuous drain current (ID) of up to 4.2A, and has a on resistance (RD) as low as 45m R, ensuring excellent energy conversion efficiency in low-power environments. Widely used in power management, load switch control, battery protection circuits and other fields, it is an ideal semiconductor component for creating energy-saving and compact electronic solutions.]]></description>
</item>
<item>
	<title><![CDATA[AO3409(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3409-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:17:07</pubDate>
	<description><![CDATA[AO3409 is a high-performance P-channel MOSFET designed for high integration and energy-saving electronics, using a miniaturized SOT-23-3L package. This device provides a maximum drain source voltage (VDSS) of 30V, can withstand a continuous drain current (ID) of 4.2A, and has an excellent 45m R on resistance (RD (on)), ensuring efficient energy conversion efficiency even at low power consumption. Widely used in scenarios such as power conversion, load switching, and battery management systems, it is the preferred semiconductor component for miniaturized and high-performance electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[RRR030P03(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/rrr030p03-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:16:55</pubDate>
	<description><![CDATA[RRR030P03 is a high-performance P-channel MOSFET designed for high efficiency and miniaturization in a compact SOT-23-3L package. The device provides a drain source voltage (VDSS) of up to 30V, can stably handle a continuous drain current (ID) of 4.2A, and has a conduction resistance (RD (on) of 45m R, ensuring excellent energy conversion efficiency and low power consumption performance. Widely used in power management, load switching, battery protection circuits and other fields, it is an ideal semiconductor component for achieving energy-saving and compact electronic solutions.]]></description>
</item>
<item>
	<title><![CDATA[BSS209PW(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss209pw-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:16:42</pubDate>
	<description><![CDATA[BSS209PW is a high-performance P-channel MOSFET designed for high integration and energy-saving electronic applications, using a small SOT-323 package. This device has a maximum drain source voltage of 20V (VDSS), can carry a continuous drain current of 1.8A (ID), and its 120m R on resistance (RD (on) ensures efficient energy conversion under low power consumption conditions. Widely used in power conversion, load switch control, battery management systems and other scenarios, it is an important semiconductor component for achieving miniaturization and energy-saving electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[RZF013P01TL(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/rzf013p01tl-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:16:30</pubDate>
	<description><![CDATA[RZF013P01TL is a highly reliable P-channel MOSFET, designed for miniaturization and high-performance electronic devices in a compact SOT-323 package. The device has a maximum drain source voltage (VDSS) of 20V and can stably transmit a continuous drain current (ID) of 1.8A. Its 120m R on resistance (RD (on) ensures good energy efficiency performance under low power consumption conditions. Widely used in power management, load switch control, battery protection systems and other fields, it is an ideal semiconductor component for creating energy-saving and compact electronic solutions.]]></description>
</item>
<item>
	<title><![CDATA[PMF170XP(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/pmf170xp-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:16:18</pubDate>
	<description><![CDATA[PMF170XP is a high-performance P-channel MOSFET designed for compact and energy-efficient electronics, using a miniaturized SOT-323 package. This device supports a maximum drain source voltage of 20V (VDSS), can carry a continuous drain current of 1.8A (ID), and its 120m R on resistance (RD (on) ensures efficient performance at low power consumption. Widely used in power conversion, load switching, battery protection circuits and other fields, it is an ideal semiconductor component for miniaturization and energy-saving electronic solutions.]]></description>
</item>
<item>
	<title><![CDATA[MCH3376(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/mch3376-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:16:05</pubDate>
	<description><![CDATA[MCH3376 is an efficient P-channel MOSFET designed for high-density circuits using a small SOT-323 package. The device provides a maximum drain source voltage of 20V (VDSS), can carry a continuous drain current of 1.8A (ID), and has a conduction resistance of 120m R (RD (on)), ensuring good energy conversion efficiency at low power consumption. Widely used in power management, load switching, logic circuit reversal and other fields, it is an ideal semiconductor component for miniaturized and energy-saving electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SM3401SRL(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm3401srl-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:15:53</pubDate>
	<description><![CDATA[SM3401SRL is a high-performance P-channel MOSFET designed for high efficiency and miniaturized electronic devices in a compact SOT-23 package. The device supports a maximum drain source voltage of 30V (VDSS) and can handle continuous drain current (ID) of up to 4.2A. Its 45m R on resistance (RD (on) ensures superior energy conversion efficiency and low power consumption characteristics. Widely used in power conversion, load switching, battery management systems and other fields, it is an ideal semiconductor component for achieving energy-saving and compact electronic solutions.]]></description>
</item>
<item>
	<title><![CDATA[Si2374DS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2374ds-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:15:41</pubDate>
	<description><![CDATA[Si2374DS-T1-GE3 is a high-performance N-channel MOSFET designed for high efficiency and miniaturization in a compact SOT-23 package. This device provides a maximum drain source voltage of 20V (VDSS), can withstand a continuous drain current of 3A (ID), and has an excellent 23m R on resistance (RD (on)), ensuring high efficiency and low power consumption performance. Widely used in power management, load switching, battery protection and other circuits, it is an ideal semiconductor component for creating energy-saving and compact electronic solutions.]]></description>
</item>
<item>
	<title><![CDATA[Si2312BDS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2312bds-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:15:28</pubDate>
	<description><![CDATA[Si2312BDS-T1-GE3 is a high-performance N-channel MOSFET designed for high integration and low-power applications in a compact SOT-23 package. The device has a maximum drain source voltage of 20V (VDSS) and can withstand a continuous drain current of 3A (ID). With its excellent 23m R on resistance (RD (on)), it effectively reduces power consumption while ensuring high efficiency. Widely used in power conversion, load switching, battery protection and other circuits, it is an ideal semiconductor component for achieving miniaturization and energy-saving electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[Si2312BDS-T1-E3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2312bds-t1-e3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:15:16</pubDate>
	<description><![CDATA[Si2312BDS-T1-E3 is a high-performance N-channel MOSFET designed for high-performance, low-power circuits using a miniaturized SOT-23 package. This device provides a maximum drain source voltage of 20V (VDSS), can stably carry a drain current of 3A (ID), and has an excellent 23m R on resistance (RD (on)), ensuring good energy conversion efficiency. Widely used in scenarios such as power management, load switches, and battery management systems, it is an excellent semiconductor component for building miniaturized and energy-saving electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[DMN2075U(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn2075u-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:15:04</pubDate>
	<description><![CDATA[DMN2075U is a high-performance N-channel MOSFET designed for high efficiency and miniaturization in a compact SOT-23 package. This device has a maximum drain source voltage of 20V (VDSS), can withstand a continuous drain current of 3A (ID), and ensures excellent energy efficiency and low power performance with its excellent 23m R on resistance (RD (on)). Widely used in power conversion, load switching, battery protection and other fields, it is a selected semiconductor component for achieving efficient and energy-saving electronic solutions.]]></description>
</item>
<item>
	<title><![CDATA[BSS214NWH6327(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss214nwh6327-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:14:52</pubDate>
	<description><![CDATA[BSS214NWH6327 is a high-performance N-channel MOSFET designed for miniaturization and high energy efficiency electronic devices using SOT-323 packaging. This device supports a maximum drain source voltage (VDSS) of 20V and can provide a sustainable drain current (ID) of 2A. Its feature is a low on resistance (RD (on) of 49m R, which effectively reduces power consumption and improves system efficiency. Widely used in scenarios such as mobile devices, power conversion, logic control, etc. that require high size and efficiency, it is an ideal choice for MOSFET components.]]></description>
</item>
<item>
	<title><![CDATA[BSS816NWH6327XTSA1(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss816nwh6327xtsa1-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:14:39</pubDate>
	<description><![CDATA[BSS816NWH6327XTSA1 is a precision N-channel MOSFET designed for compact and high-performance electronics in a small SOT-323 package. The device provides a maximum drain source voltage (VDSS) of 20V, has a stable 2A drain current (ID), and a low on resistance (RD (on) of 49m R, ensuring excellent energy efficiency and low power performance. This MOSFET is widely used in mobile devices, power management, signal switching, and other circuits that require high size and efficiency. It is a key component for achieving miniaturization and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[BSS816NW(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss816nw-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:14:27</pubDate>
	<description><![CDATA[BSS816NW is a high-performance N-channel MOSFET, packaged in a miniature SOT-323 package, particularly suitable for high-density circuit board design. The device supports a maximum drain source voltage of 20V (VDSS) and can provide a stable 2A drain current (ID). Its advantage lies in its low on resistance (RD (on) of 49m R, which effectively reduces power consumption and improves system energy efficiency. Widely used in portable devices, power conversion, logic control and other fields, it is an ideal MOSFET component for achieving miniaturization and energy-saving electronic products.]]></description>
</item>
<item>
	<title><![CDATA[BSS214NW(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss214nw-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:14:15</pubDate>
	<description><![CDATA[BSS214NW is an N-channel MOSFET designed for high integration and energy-saving applications in a compact SOT-323 package. This device has a maximum drain source voltage (VDSS) of 20V and can continuously provide a drain current (ID) of 2A. It is characterized by a low on resistance (RD (on) of 49m R, which effectively reduces power consumption and improves system energy efficiency while ensuring good switching performance. Widely used in mobile devices, power management, signal switching and other circuits that require small volume and high efficiency.]]></description>
</item>
<item>
	<title><![CDATA[DMN2053UW(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn2053uw-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:14:02</pubDate>
	<description><![CDATA[DMN2053UW is a high-performance N-channel MOSFET packaged in a small SOT-323 package, particularly suitable for electronic designs with strict space requirements. It has a maximum drain source voltage (VDSS) of 20V, can stably carry a continuous drain current (ID) of 2A, and has a low on resistance (RD (on) of 49m R, effectively ensuring low power consumption and high energy efficiency performance. This MOSFET is widely used in handheld devices, power control modules, logic switch circuits, and other scenarios, making it an ideal semiconductor component for miniaturized and energy-saving electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[PMF63UNE(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/pmf63une-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:13:50</pubDate>
	<description><![CDATA[PMF63UNE is a compact N-channel MOSFET designed for high integration circuits using a miniature SOT-323 package. This device provides a maximum drain source voltage (VDSS) of 20V, supports stable 2A drain current (ID), and is characterized by a low on resistance (RD (on) of 49m R, which helps improve circuit efficiency and reduce power consumption. This MOSFET is widely used in portable devices, power management, signal switching, and other aspects, and is an important component for achieving miniaturization and high-efficiency electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[MCH3479(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/mch3479-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:13:38</pubDate>
	<description><![CDATA[MCH3479 is a compact N-channel MOSFET designed in a space saving SOT-323 package, particularly suitable for high-density circuit designs. This device supports a maximum drain source voltage of 20V (VDSS) and can provide a stable 2A drain current (ID). Its highlight is its low on resistance (RD (on) of 49m R, which effectively reduces system power consumption and improves energy efficiency. MCH3479 MOSFETs are widely used in mobile devices, power control, logic switching and other fields, and are ideal components for miniaturization and energy-saving electronic product design.]]></description>
</item>
<item>
	<title><![CDATA[DMN2065UW(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn2065uw-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:13:26</pubDate>
	<description><![CDATA[DMN2065UW is a sophisticated N-channel MOSFET designed for compact electronic devices in a miniature SOT-323 package. The device has a maximum drain source voltage (VDSS) of 20V, can stably drive a continuous drain current (ID) of 2A, and its outstanding on resistance is only 49m R (RD (on)), ensuring lower power consumption and higher system efficiency. This MOSFET is widely used in portable devices, power management, and logic gate circuits, making it an ideal choice for achieving miniaturization and high-efficiency circuits.]]></description>
</item>
<item>
	<title><![CDATA[STD26P3LLH6(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/std26p3llh6-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:13:13</pubDate>
	<description><![CDATA[STD26P3LLH6 is a high-quality P-channel MOSFET designed in the standard TO-252-2L package for applications that require high efficiency and low power consumption. The device has a maximum drain source voltage (VDSS) of 30V and can withstand a stable 40A drain current (ID). Its highlight is its low on resistance (RD (on) of only 18m R, ensuring excellent energy conversion efficiency. This MOSFET is suitable for multiple fields such as power management, inverters, battery protection circuits, etc. It is an ideal semiconductor component for improving system efficiency and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[DMP3028LK3(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp3028lk3-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:13:01</pubDate>
	<description><![CDATA[DMP3028LK3 is a high-performance P-channel MOSFET, designed in a miniaturized TO-252-2L package for high-performance electronic devices. The device has a maximum drain source voltage (VDSS) of 30V and can stably transmit a continuous drain current (ID) of 40A. Its outstanding feature is the low on resistance (RD) of 18m R, which effectively reduces power consumption and improves system energy efficiency. This MOSFET is widely used in various scenarios such as power conversion, load switching, battery protection circuits, and is an ideal semiconductor component for achieving efficient and energy-saving goals.]]></description>
</item>
<item>
	<title><![CDATA[NTD5C668NL(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntd5c668nl-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:12:49</pubDate>
	<description><![CDATA[NTD5C668NL is a high-performance N-channel MOSFET designed for high-efficiency power conversion and current control applications using the classic TO-252-2L package. The device has excellent electrical parameters, including a maximum drain source voltage (VDSS) of 60V, capable of carrying a continuous drain current (ID) of 80A, and its outstanding feature lies in its conduction resistance (RD (on) as low as 6.5m R, effectively reducing power loss and improving overall system efficiency. This MOSFET is widely used in fields such as switching power supplies, motor drives, battery management systems, and is an ideal component for building energy-saving and efficient electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[SUD50N06-09L-E3(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sud50n06-09l-e3-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:12:36</pubDate>
	<description><![CDATA[SUD50N06-09L-E3 is a high-performance N-channel MOSFET designed for high efficiency and high current applications in the popular TO-252-2L package. The device operates at a voltage of up to 60V (VDSS) and has strong current processing capabilities. It can carry a continuous drain current of 80A (ID) and has a resistance of only 6.5m R (RD (on)) in the on state, greatly reducing power loss and improving overall energy conversion efficiency. SUD50N06-09L-E3 is suitable for many fields such as switching power supplies, motor drives, battery management systems, etc. It is a high-quality semiconductor component for building energy-saving and efficient electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[DMTH6009LK3(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmth6009lk3-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:12:24</pubDate>
	<description><![CDATA[DMTH6009LK3 is a professional N-channel MOSFET designed for high power density applications in a compact and efficient TO-252-2L package. The device has a maximum drain source voltage (VDSS) of 60V and can stably output a continuous drain current (ID) of 80A under harsh conditions. It is worth mentioning its excellent conductivity performance, with a conductivity resistance of only 6.5m R (RD (on)), helping to reduce power consumption and improve system operating efficiency. This MOSFET is widely used in power conversion, motor drive, battery management systems, and other fields, making it an ideal choice for your high-performance power solution.]]></description>
</item>
<item>
	<title><![CDATA[SQD50N06-09L_GE3(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sqd50n06-09l_ge3-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:12:12</pubDate>
	<description><![CDATA[SQD50N06-09L_GE3 is a high-performance N-channel MOSFET, packaged in a compact TO-252-2L, designed to optimize circuit board space utilization. This device has a strong operating voltage of 60V (VDSS) and can continuously provide a drain current (ID) of up to 80A. At the same time, it performs excellently with an extremely low on resistance of 6.5m R (RD (on)), effectively reducing energy loss and improving overall energy conversion efficiency. SQD50N06-09L_GE3 is suitable for multiple fields such as switching power supplies and motor drive control, and is a reliable choice for building high-efficiency and low-power electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[IRFR7546PBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr7546pbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:11:59</pubDate>
	<description><![CDATA[IRFR7546PBF is a high-performance N-channel MOSFET packaged in the economical and practical TO-252-2L specification, designed specifically for high power density and heat dissipation optimization. The core characteristics of this device are superior, capable of withstanding a maximum drain source voltage (VDSS) of 60V and supporting continuous drain current (ID) of up to 80A. Particularly outstanding is its on resistance of only 6.5m R (RD (on)), which helps significantly reduce energy consumption and improve work efficiency. Widely used in various fields such as switching power supplies, motor drives, battery management systems, etc., it is an excellent semiconductor component for achieving efficient and energy-saving systems.]]></description>
</item>
<item>
	<title><![CDATA[IPD088N06N3G(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ipd088n06n3g-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:11:47</pubDate>
	<description><![CDATA[IPD088N06N3G is a high-quality N-channel MOSFET, packaged in TO-252-2L, designed specifically for high efficiency and high current applications. This device has excellent electrical performance, with a maximum withstand voltage of up to 60V (VDSS), capable of carrying a continuous drain current of up to 80A (ID), and exhibiting an ultra-low on resistance of 6.5m R (RD (on)) under normal conditions, effectively reducing power loss and improving system operating efficiency. This MOSFET is widely used in power conversion, motor drive, and other applications due to its excellent stability and durability, making it an ideal choice for building high-performance electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[DMTH6010LK3(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmth6010lk3-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:11:35</pubDate>
	<description><![CDATA[DMTH6010LK3 is a high-performance N-channel MOSFET, packaged in an efficient TO-252-2L package, suitable for various power conversion and switch circuit designs. It has a withstand voltage value of 60V (VDSS), provides continuous drain current (ID) of up to 80A, and excellent conductivity with a conductivity resistance of only 6.5m R (RD (on)), ensuring low power consumption and high-speed switching. It is the ideal choice for optimizing system efficiency and improving overall performance.]]></description>
</item>
<item>
	<title><![CDATA[AUIRFR1018E(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/auirfr1018e-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:11:23</pubDate>
	<description><![CDATA[AUIRFR1018E is an N-channel MOSFET designed for high-power and high-efficiency applications in a TO-252-2L package. This device provides a maximum drain source voltage (VDSS) of 60V and can handle continuous drain current (ID) of up to 80A, demonstrating excellent power processing performance. Its conduction resistance (RD (on)) is only 6.5m R, ensuring low loss and high efficiency even in high current operating conditions. Widely used in power conversion, motor drive, charging stations and other fields, it is an ideal semiconductor device for building high-performance and energy-saving circuits.]]></description>
</item>
<item>
	<title><![CDATA[IRLR3705ZPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlr3705zpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:11:10</pubDate>
	<description><![CDATA[IRLR3705ZPBF is an N-channel MOSFET designed specifically for high-power electronic devices, using standard TO-252-2L packaging. The device supports a drain source voltage (VDSS) of up to 60V and can withstand a maximum continuous drain current (ID) of 80A, demonstrating excellent current carrying capacity. Its highlight lies in its low conduction resistance (RD (on) of only 6.5m R, ensuring high efficiency and low heat generation even during high current operation. Widely used in power conversion, motor drive, battery management systems and other fields, it is an ideal semiconductor component for building high-performance and energy-saving circuits.]]></description>
</item>
<item>
	<title><![CDATA[Si3932DV(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si3932dv-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:10:58</pubDate>
	<description><![CDATA[Si3932DV is a high-performance N+N channel MOSFET designed for modern compact electronic devices in a compact SOT-23-6L package. This device can operate stably at a maximum drain source voltage (VDSS) of 30V, providing a continuous drain current (ID) of 4.5A, and has a on resistance (RD) as low as 29m R, ensuring high efficiency and low power consumption in high current applications. Widely used in circuit design such as power conversion, load switching, and logic level conversion, it is an ideal semiconductor component for achieving miniaturization and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[AO6802(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao6802-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:10:46</pubDate>
	<description><![CDATA[AO6802 is an N+N channel enhanced MOSFET, designed for modern miniaturized electronic devices in a compact SOT-23-6L package. This device supports a maximum drain source voltage of 30V (VDSS) and can provide a continuous drain current (ID) of 4.5A, demonstrating excellent current handling capabilities. Its conduction resistance (RD (on)) is only 29m R, ensuring low power consumption and high efficiency in high current applications. Widely used in power management, load switching, signal line control and other fields, it is your ideal choice for achieving high efficiency and miniaturized circuit design.]]></description>
</item>
<item>
	<title><![CDATA[Si2347DS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2347ds-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:10:34</pubDate>
	<description><![CDATA[Si2347DS-T1-GE3 is a high-performance P-channel MOSFET, packaged in an economical and practical SOT-23 package, suitable for various precision electronic designs. This device has a maximum drain source voltage (VDSS) of 30V, can stably output a drain current (ID) of 6A, and achieves high efficiency and low power consumption with a low on resistance (RD (on) of 28m R. Widely used in power switching, load driving, battery protection and other fields, it is an ideal semiconductor device choice for optimizing circuit design and improving system performance.]]></description>
</item>
<item>
	<title><![CDATA[DMG3401LSN(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg3401lsn-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:10:21</pubDate>
	<description><![CDATA[DMG3401LSN is a P-channel MOSFET that uses a compact SOT-23 package and is suitable for circuit designs with limited space. This device has a maximum drain source voltage (VDSS) of 30V, can provide a stable 6A drain current (ID), and operates at a low on resistance (RD (on) of 28m R, ensuring high efficiency and low power consumption. Widely used in power management, load switching, logic level conversion and other circuits, it is an ideal semiconductor component for building high-quality and energy-saving electronic products.]]></description>
</item>
<item>
	<title><![CDATA[FDD3706(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdd3706-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:10:09</pubDate>
	<description><![CDATA[FDD3706 is an N-channel MOSFET, packaged in the classic TO-252-2L package, suitable for various electronic applications. The device supports a maximum drain source voltage (VDSS) of 20V and can provide a continuous drain current (ID) of up to 40A, demonstrating excellent current carrying capacity. Its conduction resistance (RD (on)) is only 7.5m R, effectively reducing power consumption and improving system energy efficiency. It is particularly suitable for circuit designs that require high efficiency and low impedance, such as power conversion, motor driving, and load switching. This MOSFET has become an ideal choice for engineers due to its high performance and versatility.]]></description>
</item>
<item>
	<title><![CDATA[SISA96DN-T1-GE3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sisa96dn-t1-ge3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:09:56</pubDate>
	<description><![CDATA[SISA96DN-T1-GE3 is an N-channel MOSFET, designed for the miniaturization and high-performance needs of modern electronic devices in a compact DFN3X3-8L package. This device can operate at a maximum drain source voltage (VDSS) of 30V, providing a continuous drain current (ID) of 50A, demonstrating excellent current processing capabilities. Its conduction resistance (RD (on)) is as low as 7.5m R, effectively reducing power loss and improving circuit efficiency. It is widely used in high demand applications such as power conversion, load switching, battery management systems, etc. It is an ideal semiconductor component for achieving efficient and energy-saving design.]]></description>
</item>
<item>
	<title><![CDATA[DMG7430LFG(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg7430lfg-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:09:44</pubDate>
	<description><![CDATA[DMG7430LFG is an N-channel MOSFET designed with a small DFN3X3-8L package specifically for the miniaturization and high-performance requirements of modern electronic devices. This device supports a maximum drain source voltage of 30V (VDSS) and can provide a stable 50A continuous drain current (ID), demonstrating superior current processing performance. Its uniqueness lies in its low conduction resistance (RD (on) of 7.5m R, which effectively reduces power consumption and improves system efficiency. It is particularly suitable for power conversion, load switching, and other circuit applications that require high efficiency and low impedance.]]></description>
</item>
<item>
	<title><![CDATA[CSD16325Q5(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/csd16325q5-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:09:32</pubDate>
	<description><![CDATA[CSD16325Q5 is an N-channel MOSFET designed specifically for modern compact electronic devices in a miniaturized DFN5X6-8L package. This device can operate at a maximum drain source voltage (VDSS) of 30V, providing a continuous drain current (ID) of up to 150A, demonstrating excellent current processing capabilities. Its highlight lies in its ultra-low conduction resistance (RD (on) of only 2m R, which effectively reduces power consumption and improves circuit efficiency. It is suitable for high-power application scenarios such as power conversion, motor drive, and battery management systems, and is an ideal semiconductor component for achieving high-performance circuit design.]]></description>
</item>
<item>
	<title><![CDATA[SIR464DP-T1-GE3(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sir464dp-t1-ge3-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:09:20</pubDate>
	<description><![CDATA[SIR464DP-T1-GE3 is a high-performance N-channel MOSFET, designed for the miniaturization and high-performance needs of modern electronic devices in a compact DFN5X6-8L package. This device can operate stably at a maximum drain source voltage (VDSS) of 30V, providing a continuous drain current (ID) of up to 150A, demonstrating excellent power processing performance. Its notable feature is the ultra-low conduction resistance (RD (on) of only 2m R, which helps to significantly reduce power consumption and improve system efficiency. It is widely used in power conversion, motor drive, new energy and other fields, and is your preferred semiconductor device for building efficient and energy-saving circuits.]]></description>
</item>
<item>
	<title><![CDATA[SIR158DP-T1-GE3(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sir158dp-t1-ge3-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:09:07</pubDate>
	<description><![CDATA[SIR158DP-T1-GE3 is an N-channel MOSFET designed for modern compact electronic products in a DFN5X6-8L package. This device can operate stably at a maximum drain source voltage (VDSS) of 30V, providing a continuous drain current (ID) of up to 150A, demonstrating excellent current processing capabilities. Its highlight is its ultra-low conduction resistance (RD (on) of only 2m R, ensuring high efficiency and low power consumption in high current applications. Widely used in power conversion, motor drive, fast charging and other fields, it is an ideal semiconductor component for achieving high-performance circuit design.]]></description>
</item>
<item>
	<title><![CDATA[SI7880ADP-T1-E3(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7880adp-t1-e3-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:08:55</pubDate>
	<description><![CDATA[SI7880ADP-T1-E3 is an N-channel MOSFET packaged in DFN5X6-8L, particularly suitable for miniaturization design requirements of modern electronic devices. This device has a maximum drain source voltage of 30V (VDSS) and can handle continuous drain current (ID) of up to 150A, demonstrating its excellent current carrying performance. Its key feature is an ultra-low conduction resistance (RD (on) of only 2m R, greatly improving energy efficiency and reducing power consumption. Widely used in high-power applications such as power conversion, motor drives, and battery management systems, it is an ideal semiconductor component for building efficient and energy-saving circuits.]]></description>
</item>
<item>
	<title><![CDATA[SI7336ADP-T1-GE3(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7336adp-t1-ge3-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:08:43</pubDate>
	<description><![CDATA[SI7336ADP-T1-GE3 is a high-performance N-channel MOSFET, packaged in DFN5X6-8L to meet the miniaturization design requirements of modern electronic products. The device operates stably at a maximum drain source voltage (VDSS) of 30V and can handle continuous drain current (ID) of up to 150A, demonstrating strong current carrying capacity. Its unique advantage lies in its ultra-low conduction resistance (RD (on) of only 2m R, which effectively reduces power loss and improves system energy efficiency. It is widely used in high-power applications such as power conversion, motor drive, and new energy systems, and is an ideal semiconductor component for achieving efficient and energy-saving circuit design.]]></description>
</item>
<item>
	<title><![CDATA[SI7336ADP-T1-E3(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7336adp-t1-e3-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:08:30</pubDate>
	<description><![CDATA[SI7336ADP-T1-E3 is an N-channel MOSFET designed for modern high integration electronic products in a compact DFN5X6-8L package. The device operates at a maximum drain source voltage (VDSS) of 30V and can withstand continuous drain current (ID) of up to 150A, demonstrating its excellent power processing performance. The conduction resistance (RD (on)) is as low as 2m R, significantly reducing power loss and improving circuit efficiency. It is widely used in high-power scenarios such as power conversion and motor drive, making it an ideal semiconductor component choice for achieving efficient and energy-saving circuits.]]></description>
</item>
<item>
	<title><![CDATA[SI7192DP-T1-GE3(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7192dp-t1-ge3-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:08:18</pubDate>
	<description><![CDATA[SI7192DP-T1-GE3 is an N-channel MOSFET, packaged in a small DFN5X6-8L package, particularly suitable for space sensitive and high-performance electronic device applications. This device supports a maximum drain source voltage of 30V (VDSS) and can withstand continuous drain current (ID) of up to 150A, demonstrating strong current processing capabilities. Its highlight lies in its 2m R ultra-low conduction resistance (RD (on)), which effectively reduces power consumption and improves overall system efficiency. It is widely used in power conversion, motor drive, energy storage systems and other fields, and is an ideal semiconductor component for achieving efficient and energy-saving circuit design.]]></description>
</item>
<item>
	<title><![CDATA[NTTFS4932N(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nttfs4932n-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:08:06</pubDate>
	<description><![CDATA[NTTFS4932N is an N-channel MOSFET, packaged in a compact DFN5X6-8L package, suitable for modern miniaturized electronic device applications. The device can operate at a maximum drain source voltage (VDSS) of 30V, while supporting continuous drain current (ID) of up to 150A, demonstrating its excellent current processing ability and stability. Its conduction resistance (RD (on)) is as low as 2m R, effectively reducing power loss and improving overall energy efficiency. It is widely used in power conversion, motor drive, new energy and other fields, and is an ideal semiconductor device for constructing high-performance and energy-saving circuits.]]></description>
</item>
<item>
	<title><![CDATA[IRFH7932PBF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfh7932pbf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:07:54</pubDate>
	<description><![CDATA[IRFH7932PBF is an N-channel MOSFET designed specifically for miniaturization in modern electronic products, using a compact DFN5X6-8L package. The device supports a maximum drain source voltage VDSS of 30V and can withstand continuous drain current of up to 150A, demonstrating strong current processing capabilities. Its conduction resistance RD (on) is only 2m R, significantly reducing power consumption and improving circuit efficiency. It is widely used in power conversion, motor drive and other fields and is an ideal semiconductor component for high-power and high-performance circuits.]]></description>
</item>
<item>
	<title><![CDATA[IRFH5301PBF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfh5301pbf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:07:41</pubDate>
	<description><![CDATA[IRFH5301PBF is a high-performance N-channel MOSFET, packaged in a compact DFN5X6-8L package, suitable for the lightweight design requirements of modern electronic products. It can operate at a maximum drain source voltage (VDSS) of 30V and provide continuous drain current of up to 150A, demonstrating its excellent power transmission performance. Its characteristic lies in a conducting resistance (RD (on) of only 2m R, which effectively reduces power loss and improves system efficiency. It is suitable for various high-power application scenarios such as power conversion, motor drive, and battery management systems, and is an ideal component for achieving efficient circuit design.]]></description>
</item>
<item>
	<title><![CDATA[FDMS7670AS(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdms7670as-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:07:29</pubDate>
	<description><![CDATA[FDMS7670AS is a high-performance N-channel MOSFET, packaged in a compact DFN5X6-8L package, suitable for space optimization needs of modern electronic devices. This device supports a maximum drain source voltage of 30V (VDSS) and can stably handle continuous drain current of up to 150A, demonstrating excellent current carrying capacity. Its conduction resistance is only 2m R, effectively reducing power loss and improving the overall efficiency of the circuit. It is widely used in power conversion, motor drive, high-frequency switching and other fields, and is an ideal semiconductor component for achieving efficient and energy-saving design.]]></description>
</item>
<item>
	<title><![CDATA[BSC0901NS(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc0901ns-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:07:17</pubDate>
	<description><![CDATA[The BSC0901NS N-channel MOSFET adopts a miniaturized DFN5X6-8L package, designed specifically for compact electronic devices. This device supports a drain source voltage (VDSS) of up to 30V and can withstand a continuous drain current of 150A, highlighting excellent power processing capabilities. Its characteristic lies in its low conduction resistance (RD (on) of 2m R, which effectively reduces energy consumption and improves system efficiency. It is widely used in high-power applications such as power conversion and motor drive, and is an ideal semiconductor device for you to seek efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[AON6508(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon6508-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:07:05</pubDate>
	<description><![CDATA[The AON6508 N-channel MOSFET adopts advanced DFN5X6-8L packaging, balancing compact size and high efficiency performance. Its rated voltage VDSS is 30V, with a maximum continuous drain current of up to 150A, making it easy to handle high voltage and high current application scenarios. Especially outstanding is that the device‘s conduction resistance is only 2m R, ensuring low power consumption and efficient operation under high load conditions. Suitable for power conversion, motor drive, battery management systems and other fields, it is an ideal semiconductor component for optimizing circuit design and improving system efficiency.]]></description>
</item>
<item>
	<title><![CDATA[AON6382(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon6382-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:06:52</pubDate>
	<description><![CDATA[The AON6382 N-channel MOSFET adopts a compact DFN5X6-8L package, specifically designed for the miniaturization requirements of modern electronic devices. This device supports a maximum drain source voltage of 30V and can withstand continuous drain current of up to 150A, demonstrating excellent current processing capabilities. Its outstanding feature is that the conduction resistance is only 2m R, effectively reducing power loss and improving system energy efficiency. It is widely used in high-power applications such as power conversion, motor drive, and switching power supply, and is an ideal semiconductor component for achieving high-performance circuit design.]]></description>
</item>
<item>
	<title><![CDATA[AON6324(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon6324-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:06:40</pubDate>
	<description><![CDATA[The AON6324 N-channel MOSFET adopts DFN5X6-8L packaging, with exquisite volume and powerful performance. This device can operate stably at a maximum drain source voltage of 30V and support continuous drain current of up to 150A, meeting the requirements of high-power applications. Its highlight lies in the conductivity resistance of only 2m R, which helps to reduce energy loss and improve circuit efficiency. Suitable for various scenarios such as power conversion, motor drive, battery management systems, etc., it is your ideal choice for pursuing high-performance semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[CSD16403Q5A(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/csd16403q5a-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:06:28</pubDate>
	<description><![CDATA[The CSD16403Q5A N-channel MOSFET adopts DFN5X6-8L packaging, achieving high-performance integration with its compact size. This device has a maximum drain source voltage (VDSS) of 30V and can withstand continuous drain current of up to 150A, ensuring stable operation in high voltage and high current applications. Its unique low conduction resistance (RD (on)) is only 2m R, helping to reduce power consumption and improve overall energy efficiency. It is widely used in high-power applications such as power conversion and motor drive, and is an ideal choice for achieving efficient and energy-saving circuit design.]]></description>
</item>
<item>
	<title><![CDATA[NTMFS4C024N(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntmfs4c024n-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:06:15</pubDate>
	<description><![CDATA[The NTMFS4C024N N-channel MOSFET adopts a compact DFN5X6-8L package, tailored for modern compact electronic design. The rated voltage VDSS of this device is 30V, with a peak drain current of up to 150A, demonstrating excellent power processing performance. Its key advantage is that the conduction resistance is only 2m R, which allows it to maintain low power consumption and high efficiency in high current applications. It is widely used in power conversion, motor drive, and many high-efficiency circuit designs, making it an ideal semiconductor component choice for improving system performance.]]></description>
</item>
<item>
	<title><![CDATA[ISC026N03L5S(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/isc026n03l5s-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:06:03</pubDate>
	<description><![CDATA[The ISC026N03L5S N-channel MOSFET adopts a compact DFN5X6-8L package, aiming to optimize space limited and high-performance application scenarios. The device supports a drain source voltage of up to 30V and can handle continuous drain current of 150A, demonstrating excellent current transfer capability. Its striking features include a conducting resistance of only 2m R, ensuring low power consumption and high efficiency even during high current operations. This MOSFET is widely used in circuit design for power conversion, motor drive, and other high-power requirements, and is a key component for improving system performance.]]></description>
</item>
<item>
	<title><![CDATA[IRFH8311PBF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfh8311pbf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:05:51</pubDate>
	<description><![CDATA[The IRFH8311PBF N-channel MOSFET adopts a compact DFN5X6-8L package and is designed for the miniaturization trend of modern electronic devices. This device has a maximum drain source voltage of 30V and can withstand continuous drain current of up to 150A, ensuring stable operation even under heavy load conditions. Its conduction resistance is only 2m R, achieving low-power and high-efficiency conversion. It is particularly suitable for high-efficiency circuit design in power converters, motor drives, battery management systems, and other fields, and is an ideal semiconductor component for improving system performance.]]></description>
</item>
<item>
	<title><![CDATA[IRFH5302PBF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfh5302pbf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:05:38</pubDate>
	<description><![CDATA[The IRFH5302PBF N-channel MOSFET adopts a space saving DFN5X6-8L package, suitable for the miniaturization design requirements of modern electronic products. This device has a maximum drain source voltage of 30V and a continuous drain current of up to 150A, ensuring stable operation under high voltage and high current conditions. Its excellent conduction resistance is as low as 2m R, greatly reducing power loss and improving system energy efficiency. Widely used in power management, motor drives, inverters and other fields, it is an ideal semiconductor component for building high-performance circuits.]]></description>
</item>
<item>
	<title><![CDATA[FDMS0308AS(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdms0308as-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:05:26</pubDate>
	<description><![CDATA[The FDMS0308AS N-channel MOSFET adopts a compact DFN5X6-8L package, providing a perfect solution for modern compact circuit design. This device supports a maximum drain source voltage of 30V and can operate stably under continuous currents of up to 150A, demonstrating excellent power processing performance. Its ultra-low conductivity resistance of 2m R effectively reduces power loss and greatly improves system efficiency. It is suitable for various high current applications such as power conversion and motor drive, and is an ideal choice for engineers pursuing high-performance circuit design.]]></description>
</item>
<item>
	<title><![CDATA[BSC020N03MSG(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc020n03msg-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:05:14</pubDate>
	<description><![CDATA[BSC020N03MSG is a high-performance N-channel MOSFET, packaged in a miniaturized DFN5X6-8L package, suitable for high-density circuit board layout. The device can operate at a maximum drain source voltage of 30V, providing a continuous drain current of up to 150A, meeting the demanding high current application requirements. Its conduction resistance is as low as 2m R, ensuring low power consumption and high efficiency even under high loads. Widely used in power conversion, motor drive and other fields, it is an ideal semiconductor device for improving system performance and optimizing energy utilization.]]></description>
</item>
<item>
	<title><![CDATA[BSC020N03LSG(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc020n03lsg-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:05:01</pubDate>
	<description><![CDATA[BSC020N03LSG N-channel MOSFET adopts a compact and efficient DFN5X6-8L package, which is particularly suitable for space limited design schemes. Equipped with a maximum leakage source voltage of 30V, it can continuously provide a leakage current of up to 150A, demonstrating excellent power processing capabilities. Its conduction resistance is as low as 2m R, ensuring low power consumption and high efficiency even in high current operation. It is widely used in power conversion, motor control, and other high current applications, making it an ideal semiconductor component for creating high-performance electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[AON6358(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon6358-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:04:49</pubDate>
	<description><![CDATA[The AON6358 N-channel MOSFET adopts advanced DFN5X6-8L packaging, which is compact and powerful. This device has a maximum steady-state drain source voltage of 30V and can support continuous drain current of up to 150A, fully ensuring reliable operation under high voltage and high current conditions. It is worth mentioning that its conduction resistance is only 2m R, effectively reducing energy consumption and improving the working efficiency of the circuit. This MOSFET is perfect for power conversion, motor drive, and other high-end power electronics applications, making it the ideal choice for optimizing system design.]]></description>
</item>
<item>
	<title><![CDATA[CSD16321Q5(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/csd16321q5-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:04:36</pubDate>
	<description><![CDATA[CSD16321Q5 N-channel MOSFET adopts advanced DFN5X6-8L packaging technology, with compact size and powerful performance. This device can carry a voltage of up to 30V and a maximum continuous drain current of 150A, ensuring stable operation in high voltage and high current environments. Its excellent conduction resistance is only 2m R, which helps to reduce power consumption and improve system efficiency. It is particularly suitable for applications such as power conversion, motor drive, battery management systems, etc. It is your ideal partner for achieving efficient and energy-saving circuit design.]]></description>
</item>
<item>
	<title><![CDATA[BSC018NE2LSI(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc018ne2lsi-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:04:24</pubDate>
	<description><![CDATA[BSC018NE2LSI N-channel MOSFETs are presented in industry-leading DFN5X6-8L packaging, designed specifically for compact and efficient use. This device has a breakdown voltage of 30V and provides a continuous drain current of up to 150A, fully meeting the requirements of high current applications. Its highlight lies in its ultra-low conduction resistance of only 2m R, which significantly reduces power loss and improves overall efficiency. It is widely used in fields such as power management and motor drive that require high efficiency and stability, and is the preferred component for optimizing and upgrading your circuit.]]></description>
</item>
<item>
	<title><![CDATA[NTMFS4C054N(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntmfs4c054n-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:04:11</pubDate>
	<description><![CDATA[This NTMFS4C054N MOS transistor adopts advanced DFN5X6-8L packaging technology, which is compact and efficient. As a high-performance N-channel MOSFET, its operating voltage can reach up to 30V and continuous drain current can reach 150A, demonstrating excellent power processing capabilities. The conduction resistance is only 2m R, ensuring lower losses and higher efficiency in high current applications. Suitable for various power conversion, motor drive and other scenarios, it is your ideal choice for optimizing circuit design.]]></description>
</item>
<item>
	<title><![CDATA[ISC019N03L5S(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/isc019n03l5s-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:03:59</pubDate>
	<description><![CDATA[The ISC019N03L5S model N-channel MOSFET adopts a compact DFN5X6-8L package, which has excellent heat dissipation performance and high integration, especially suitable for the miniaturization needs of modern electronic devices. The rated voltage VDSS of this device is 30V, supporting a continuous current ID of up to 150A. With its ultra-low conduction resistance of 2mR, it significantly improves energy conversion efficiency and system performance.]]></description>
</item>
<item>
	<title><![CDATA[IRFH5302DPBF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfh5302dpbf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:03:47</pubDate>
	<description><![CDATA[The IRFH5302DPBF model N-channel MOSFET adopts an efficient DFN5X6-8L package, with excellent heat dissipation performance and compact size, designed specifically for high-density power management and motor drive. The device supports a 30V rated voltage VDSS, provides a powerful 150A continuous current ID, and is paired with an ultra-low conduction resistance of only 2mR to ensure the system has extremely high energy efficiency and low loss performance. Widely used in electric vehicles, power supplies, chargers, and other high current switch fields, it undergoes strict quality inspection before leaving the factory to ensure stable and reliable performance output under various harsh conditions.]]></description>
</item>
<item>
	<title><![CDATA[NTD6416ANLT4G(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntd6416anlt4g-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:03:34</pubDate>
	<description><![CDATA[The NTD6416ANLT4G model N-channel MOSFET adopts TO-252-2L packaging, which has excellent heat dissipation performance and compact size, adapting to diverse circuit design requirements. This device provides a rated voltage of 100V VDSS and supports continuous current IDs up to 20A, making it particularly suitable for high voltage and high current application scenarios. Although the conduction resistance is 80mR, it can still maintain a good energy efficiency ratio and reduce system losses. Widely used in power conversion, motor drive, inverter and other fields, it undergoes strict quality inspection before leaving the factory to ensure that the product has stable and reliable high-performance performance.]]></description>
</item>
<item>
	<title><![CDATA[IRLR3410PBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlr3410pbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:03:22</pubDate>
	<description><![CDATA[The IRLR3410PBF model N-channel MOSFET is packaged in TO-252-2L, providing excellent heat dissipation performance and compact size, suitable for various electronic device applications. The device has a rated voltage of 100V VDSS and provides a continuous current ID carrying capacity of up to 20A, meeting high voltage and high current requirements. Although its conduction resistance is 80mR, it still has a high cost-effectiveness among similar products, which helps optimize system efficiency and reduce energy consumption. Widely used in power conversion, motor drive, battery management systems and other fields, it undergoes strict quality testing before leaving the factory to ensure stable and reliable operation under various working conditions.]]></description>
</item>
<item>
	<title><![CDATA[IRFR3910PBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr3910pbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:03:10</pubDate>
	<description><![CDATA[The IRFR3910PBF model N-channel MOSFET adopts TO-252-2L packaging, which has excellent heat dissipation performance and wide compatibility. The device has a rated voltage VDSS of up to 100V and can withstand 20A continuous current ID. It is suitable for high voltage and high current application scenarios. Although its conduction resistance is 80mR, it still has competitiveness among similar products and can help improve system efficiency and reduce power consumption. Widely used in power conversion, motor drive, battery protection and other fields, it undergoes multiple quality inspections before leaving the factory to ensure that the product can work stably and reliably under various conditions.]]></description>
</item>
<item>
	<title><![CDATA[AUIRLR3410(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/auirlr3410-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:02:57</pubDate>
	<description><![CDATA[The AUIRLR3410 model N-channel MOSFET adopts the classic TO-252-2L package, which has good heat dissipation performance and versatility. The rated voltage VDSS of the device can reach up to 100V, providing 20A continuous current ID processing capability to meet the needs of high-intensity power applications. Its 80mR conduction resistance can optimize system energy efficiency to a certain extent and reduce power consumption. Widely used in power conversion, motor drive, battery management systems and other fields, it has passed strict quality testing before leaving the factory to ensure reliable and stable performance under various working conditions.]]></description>
</item>
<item>
	<title><![CDATA[MDU1532S(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/mdu1532s-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:02:45</pubDate>
	<description><![CDATA[The MDU1532S model N-channel MOSFET adopts leading DFN5X6-8L packaging technology, with excellent heat dissipation performance and compact size, designed specifically for high integration electronic devices. The device supports 30V rated voltage VDSS and can carry up to 120A continuous current ID, demonstrating strong power processing capabilities. Its ultra-low conduction resistance of 3.5mR ensures higher system energy efficiency and lower power consumption.]]></description>
</item>
<item>
	<title><![CDATA[CSD17581Q5A(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/csd17581q5a-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:02:33</pubDate>
	<description><![CDATA[The CSD17581Q5A N-channel MOSFET adopts DFN5X6-8L packaging, which is compact and lightweight, with good heat dissipation performance, suitable for high integration circuit design. The rated voltage VDSS of the device is 30V, and it can withstand continuous current ID of up to 120A, demonstrating excellent power processing capability. Its prominent feature is that the conduction resistance is as low as 3.5mR, which helps to improve system energy efficiency and reduce power consumption.]]></description>
</item>
<item>
	<title><![CDATA[SM6366ED1RL(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm6366ed1rl-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:02:20</pubDate>
	<description><![CDATA[The SM6366ED1RL model N-channel MOSFET adopts a DFN5X6-8L packaging design, which combines miniaturization and efficient heat dissipation functions, making it particularly suitable for modern high-density electronic device applications. The device has a rated voltage of 30V VDSS and provides up to 120A continuous current ID processing capability, demonstrating excellent power control performance. Its 3.5mR ultra-low conduction resistance effectively improves energy efficiency and reduces system losses.]]></description>
</item>
<item>
	<title><![CDATA[SIRA12DP-T1-GE3(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sira12dp-t1-ge3-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:02:08</pubDate>
	<description><![CDATA[The SIRA12DP-T1-GE3 model N-channel MOSFET adopts a compact DFN5X6-8L package, which combines miniaturization and efficient heat dissipation performance, making it particularly suitable for high integration circuit design. The device supports a rated voltage of 30V VDSS and provides a continuous current ID of up to 120A, demonstrating excellent power processing capabilities. Its conduction resistance is only 3.5mR, greatly improving energy conversion efficiency and reducing system losses.]]></description>
</item>
<item>
	<title><![CDATA[NTMFS4937N(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntmfs4937n-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:01:56</pubDate>
	<description><![CDATA[The NTMFS4937N model N-channel MOSFET adopts compact DFN5X6-8L packaging technology, designed specifically for high-density and high-performance electronic devices. This device has a rated voltage of 30V VDSS and supports continuous current ID up to 120A, demonstrating strong power processing capabilities. Its excellent 3.5mR conduction resistance helps achieve ultra-high energy efficiency and reduces unnecessary system losses.]]></description>
</item>
<item>
	<title><![CDATA[IRFH8324PBF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfh8324pbf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:01:43</pubDate>
	<description><![CDATA[The IRFH8324PBF model N-channel MOSFET adopts advanced DFN5X6-8L packaging form, combining efficient heat dissipation and miniaturization characteristics. The rated voltage VDSS of the device is 30V, supporting a continuous current ID of up to 120A, demonstrating excellent power processing capabilities. Its conduction resistance as low as 3.5mR effectively improves energy conversion efficiency and reduces system losses. Widely used in fast charging devices, high current switching power supplies, and other fields, it undergoes strict quality testing before leaving the factory to ensure stable and efficient performance output in various harsh environments.]]></description>
</item>
<item>
	<title><![CDATA[CSD17506Q5A(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/csd17506q5a-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:01:31</pubDate>
	<description><![CDATA[The CSD17506Q5A N-channel MOSFET adopts a compact DFN5X6-8L packaging design, which balances space utilization and heat dissipation. The rated voltage VDSS of the device is 30V, with a continuous current ID processing capability of up to 120A, fully meeting the requirements of high-power applications. Its ultra-low conduction resistance of 3.5mR greatly improves system energy efficiency and reduces losses. This MOSFET is widely used in electric vehicle charging, power converters, motor drives, and other applications. Before leaving the factory, it undergoes strict quality inspection to ensure excellent and stable performance even under extreme conditions.]]></description>
</item>
<item>
	<title><![CDATA[SI7216DN-T1-GE3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7216dn-t1-ge3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:01:19</pubDate>
	<description><![CDATA[The SI7216DN-T1-GE3 MOSFET is a high-performance N+N channel semiconductor component designed for energy-saving and miniaturization in modern electronic products, using a compact DFN3X3-8L package. This device has a rated voltage of 40V VDSS and can stably withstand a continuous current ID of 20A, highlighting excellent power processing capabilities. Meanwhile, its ultra-low conductivity resistance of 17mR effectively improves energy efficiency and reduces system losses. Widely used in power conversion, motor drive, battery management systems and other scenarios, it undergoes strict quality inspection before leaving the factory to ensure excellent and stable performance in different application environments.]]></description>
</item>
<item>
	<title><![CDATA[SI7216DN-T1-E3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7216dn-t1-e3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:01:07</pubDate>
	<description><![CDATA[The SI7216DN-T1-E3 model MOSFET is a high-efficiency N+N channel semiconductor device that uses a compact DFN3X3-8L package, especially suitable for modern electronic designs with limited space. The device has a rated voltage of 40V VDSS and a continuous current ID of up to 20A, fully demonstrating powerful power processing performance. Its ultra-low conduction resistance of 17mR further optimizes system efficiency and reduces energy consumption. This MOSFET is widely used in fields such as power conversion, motor drive, battery management systems, etc. It undergoes strict quality inspection before leaving the factory to ensure excellent and stable performance under various harsh conditions.]]></description>
</item>
<item>
	<title><![CDATA[SM3415SRL(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm3415srl-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:00:54</pubDate>
	<description><![CDATA[The SM3415SRL model P-channel MOSFET adopts a compact SOT-23-3L package, suitable for use on circuit boards with limited space. This device provides a rated voltage of 20V VDSS and a continuous current ID processing capability of 4.1A, making it particularly suitable for power switching and load driving applications under medium and low voltage. Its conduction resistance is only 34mR, aimed at enhancing system efficiency and reducing power consumption. This MOSFET performs excellently in power management, logic level conversion, and other aspects. Before leaving the factory, it has passed strict quality testing to ensure stable and reliable performance in various application scenarios.]]></description>
</item>
<item>
	<title><![CDATA[FDN304PZ(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdn304pz-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:00:42</pubDate>
	<description><![CDATA[The FDN304PZ model P-channel MOSFET adopts an economical and efficient SOT-23-3L packaging form, designed specifically for the miniaturization requirements of modern electronic devices. The device has a rated voltage of 20V VDSS and a continuous current ID processing capability of 4.1A, suitable for various power control applications. Its conduction resistance is as low as 34mR, which helps to improve system efficiency and reduce energy consumption. This MOSFET is commonly used in functional modules such as power switches, load drivers, and logic level conversion. It undergoes strict quality inspection before leaving the factory to ensure stable and reliable performance for users.]]></description>
</item>
<item>
	<title><![CDATA[AO3485(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3485-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:00:30</pubDate>
	<description><![CDATA[The AO3485 model P-channel MOSFET adopts a miniature SOT-23-3L packaging design, which is compact and convenient for layout in compact electronic devices. The device has a rated voltage of 20V VDSS and a continuous current ID carrying capacity of 4.1A, specifically designed for high-efficiency and low-power applications. Its 34mR conduction resistance ensures high energy conversion efficiency in practical operation. This MOSFET is suitable for various power switch, load drive, and logic level conversion scenarios. Before leaving the factory, it undergoes strict quality control to ensure excellent performance under various working conditions.]]></description>
</item>
<item>
	<title><![CDATA[STN442D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/stn442d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:00:18</pubDate>
	<description><![CDATA[The STN442D model N-channel MOSFET adopts a standard TO-252-2L package, which is compact and has excellent heat dissipation, suitable for various design schemes with limited space. This device has a rated voltage of 60V VDSS and a maximum continuous current ID of up to 30A, demonstrating its excellent power transmission capability. Even more commendable is its 22mR low on resistance, which greatly improves energy efficiency and system response speed. Widely used in power conversion, motor drive, load switch and other fields, all products undergo strict quality control before leaving the factory to ensure long-lasting and stable high-performance performance.]]></description>
</item>
<item>
	<title><![CDATA[STD30NF06LT4(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/std30nf06lt4-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 11:00:05</pubDate>
	<description><![CDATA[The STD30NF06LT4 model N-channel MOSFET adopts the classic TO-252-2L package, which is highly favored by the market for its compact size and good heat dissipation performance. The nominal voltage VDSS of the device is as high as 60V, and the peak current ID can reach 30A, highlighting its powerful current processing ability. The conduction resistance is only 22mR, effectively ensuring energy efficiency and system performance in high-power applications. This MOSFET is suitable for multiple scenarios such as power conversion, load switching, and motor drive. It undergoes rigorous quality testing before leaving the factory to ensure its stable operation under various harsh conditions and outstanding performance.]]></description>
</item>
<item>
	<title><![CDATA[AON7410(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon7410-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:59:53</pubDate>
	<description><![CDATA[The AON7410 model N-channel MOSFET adopts a modern DFN3X3-8L packaging design to meet the spatial optimization requirements of precision electronic equipment. This device has a rated voltage of 30V VDSS and a continuous current ID carrying capacity of up to 30A, reflecting its strong power processing performance. Its highlight lies in the conductivity resistance of only 9mR, which effectively improves energy conversion efficiency and reduces system losses. This MOSFET is widely used in cutting-edge industries such as power conversion, high current switch control, and motor drive. It undergoes strict quality inspection before leaving the factory to ensure efficient and stable semiconductor solutions for you.]]></description>
</item>
<item>
	<title><![CDATA[FDMC7696(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdmc7696-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:59:40</pubDate>
	<description><![CDATA[The FDMC7696 N-channel MOSFET adopts a compact DFN3X3-8L packaging process, designed specifically for miniaturization and high-performance modern electronic devices. The device supports a rated voltage of 30V VDSS and has excellent 30A continuous current ID carrying capacity, demonstrating strong power processing performance. Especially outstanding is its 9mR ultra-low conduction resistance, which effectively improves energy utilization efficiency and reduces system heat loss. This MOSFET is widely used in high demand fields such as power management, motor drives, and battery management systems. Before leaving the factory, it undergoes strict quality testing to ensure excellent and stable performance experience for users.]]></description>
</item>
<item>
	<title><![CDATA[MCP87130(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/mcp87130-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:59:28</pubDate>
	<description><![CDATA[The MCP87130 model MOSFET is an advanced N-channel semiconductor component designed for high-density, low-energy electronic devices in a miniaturized DFN3X3-8L packaging. Its key features include a maximum rated voltage of 30V VDSS and a powerful 30A continuous current ID carrying capacity, providing excellent power processing performance. Of particular note, its conduction resistance is extremely low, only 9mR, which can significantly improve system efficiency and reduce energy consumption. This product is widely used in multiple fields such as power conversion, high current switch control, and motor drive, and strictly implements quality control to ensure that each MOSFET can provide stable and efficient operating performance.]]></description>
</item>
<item>
	<title><![CDATA[FDMC8878(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdmc8878-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:59:16</pubDate>
	<description><![CDATA[The FDMC8878 MOSFET is a highly integrated N-channel semiconductor device designed in a space saving DFN3X3-8L package, particularly suitable for compact electronic products. Its core parameters include a rated voltage of 30V VDSS and powerful 30A continuous current ID processing capability, demonstrating excellent power control performance. In addition, the device has a conduction resistance of only 9mR, significantly improving energy efficiency and reducing system losses. Widely used in high-power scenarios such as power management and motor drives, each MOSFET undergoes strict quality testing before leaving the factory to ensure excellent performance and stability.]]></description>
</item>
<item>
	<title><![CDATA[TPN11003NL(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/tpn11003nl-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:59:03</pubDate>
	<description><![CDATA[The TPN11003NL model MOSFET is a high-performance N-channel semiconductor module that adopts the DFN3X3-8L packaging process, especially suitable for the miniaturization needs of modern electronic devices. This device has a rated voltage of 30V VDSS and a powerful continuous current ID processing capability of up to 30A, fully meeting the requirements of high-power application scenarios. More noteworthy is its excellent conduction resistance as low as 9mR, achieving higher energy conversion efficiency and system performance. This product is widely used in various occasions such as power converters and electric equipment drives, and has undergone strict quality inspection to ensure a reliable and stable user experience for customers.]]></description>
</item>
<item>
	<title><![CDATA[BSZ130N03MSG(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsz130n03msg-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:58:51</pubDate>
	<description><![CDATA[The BSZ130N03MSG model MOSFET is an efficient N-channel semiconductor device that adopts a miniaturized DFN3X3-8L packaging design, optimized for high-density circuit board applications. Its strength lies in its 30V withstand voltage rating VDSS and amazing 30A continuous current ID carrying capacity, fully demonstrating excellent power management capabilities. Especially outstanding is that the conduction resistance is as low as 9mR, significantly improving energy utilization and system efficiency. This product is widely used in various fields such as power management, motor drive, etc. It has undergone rigorous quality testing before leaving the factory to ensure that it provides you with first-class performance and stability.]]></description>
</item>
<item>
	<title><![CDATA[AUIRFR9024N(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/auirfr9024n-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:58:39</pubDate>
	<description><![CDATA[AUIRFR9024N is a high-quality P-channel MOSFET packaged in TO-252-2L, particularly suitable for high-efficiency power conversion and load switching scenarios. This device provides excellent voltage endurance, with a VDSS of up to 60V and strong current processing capabilities, with a maximum continuous current of up to ID10A. Its highlight lies in its extremely low conduction resistance RD (on), which is only 125mR, helping to reduce power consumption and improve energy efficiency. With excellent electrical performance and compact size design, AUIRFR9024N is the ideal component choice for your power management solution.]]></description>
</item>
<item>
	<title><![CDATA[AUIRFR024NTRL(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/auirfr024ntrl-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:58:26</pubDate>
	<description><![CDATA[The AUIRFR024NTRL N-channel MOSFET adopts the industry mainstream TO-252-2L packaging, which has excellent heat dissipation performance and layout flexibility. Its core advantage lies in supporting a maximum drain source voltage (VDSS) of 60V and a continuous drain current (ID) of up to 20A, specifically designed for high-power applications. The conduction resistance is as low as 27m R, ensuring high efficiency and low loss even under high current operation. Widely used in power converters, motor drives, and other fields, it is an ideal semiconductor device that combines high performance and reliability.]]></description>
</item>
<item>
	<title><![CDATA[AON7426(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon7426-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:58:13</pubDate>
	<description><![CDATA[AON7426 MOSFET, packaged in an efficient and compact DFN3X3-8L form, is an N-channel power MOSFET with powerful performance. With a rated voltage of 30V and an amazing 100A continuous current ID capability, it demonstrates its excellent power processing performance. Its conduction resistance RD (on), as low as 4mR R, significantly reduces energy loss and optimizes system performance, making it particularly suitable for applications such as high power density, demanding switching power supplies, motor drives, and battery management systems. It is an ideal choice for engineers to build high-performance electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[AON6576(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon6576-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:58:01</pubDate>
	<description><![CDATA[AON6576 is an N-channel MOSFET designed in a compact DFN5X6-8L package, specifically designed for efficient and miniaturized electronic systems. This device can operate stably under a voltage of 30V VDSS, providing a continuous current of up to 80A, meeting the requirements of high current application scenarios. Its core advantage lies in its ultra-low conduction resistance RD (on) of only 4.3mR, which significantly reduces power loss and improves system energy efficiency. AON6576 is widely used in power conversion, motor drive, and other semiconductor applications that require high efficiency and energy conservation.]]></description>
</item>
<item>
	<title><![CDATA[AOD444(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod444-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:57:48</pubDate>
	<description><![CDATA[AOD444 is a high-quality N-channel MOSFET packaged in industry standard TO-252-2L, making it easy to integrate into various circuit designs. The core parameters of the device include a maximum drain source voltage (VDSS) of up to 60V, which can withstand and transmit a continuous drain current (ID) of 20A. At the same time, its on resistance (RD) as low as 27m R ensures high efficiency and low loss. This MOSFET is suitable for applications such as power conversion, motor drive, LED lighting dimming, etc. It is an ideal semiconductor device for improving system performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[AOD2922(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod2922-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:57:36</pubDate>
	<description><![CDATA[AOD2922 N-channel MOSFET, using efficient packaging TO-252-2L, designed specifically for power management and circuit control in 100V high voltage environments. This device can withstand a maximum drain source voltage VDSS of 100V and a continuous drain current ID of up to 15A, ensuring stable operation in high-voltage applications. The conduction resistance RD (on) is 100mR, which although not ultra-low resistance, still demonstrates good cost-effectiveness in medium current applications. Suitable for various scenarios such as switching power supplies, battery charging and discharging control, and motor drive, it is an ideal component for building efficient and reliable circuits.]]></description>
</item>
<item>
	<title><![CDATA[AO4822A(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4822a-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:57:24</pubDate>
	<description><![CDATA[AO4822A is a high-performance N+N channel MOSFET designed for high current applications in a compact SOP-8 package. The device has outstanding characteristics, with a maximum operating voltage of up to 30V VDSS, and can easily handle continuous drain currents of 8.5A; Its excellent 15m R conducting resistor RD (on) effectively reduces power loss and significantly improves system efficiency. Widely used in power conversion, motor drive, battery management systems and other fields, it is an ideal MOSFET solution for building energy-saving and efficient electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[AO4818(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4818-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:57:12</pubDate>
	<description><![CDATA[AO4818 is a high-performance N+N channel MOSFET designed for high current applications using standard SOP-8 packaging. This device provides a maximum operating voltage of 30V VDSS and supports 8.5A continuous drain current, ensuring strong and stable current output capability. In addition, the low conduction resistance RD (on) design of 15m R greatly reduces power loss and improves the overall energy efficiency of the system. Widely used in power conversion, motor drive, battery management systems and other fields, it is the ideal MOSFET choice for achieving efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[AO4800B(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4800b-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:56:59</pubDate>
	<description><![CDATA[AO4800B is a high-performance N+N channel MOSFET designed for high current applications using SOP-8 packaging technology. The device features a maximum operating voltage VDSS of up to 30V, capable of carrying 8.5A continuous drain current, and providing powerful current processing capabilities; Its conduction resistance RD (on) as low as 15m R effectively reduces system power consumption and significantly improves energy efficiency. Widely used in power conversion, motor drive, battery management systems and other scenarios, it is an ideal MOSFET device for achieving efficient and energy-saving electronic design.]]></description>
</item>
<item>
	<title><![CDATA[AO4800(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4800-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:56:47</pubDate>
	<description><![CDATA[AO4800 is a high-performance N+N channel MOSFET designed for high current applications using SOP-8 packaging. This device has a maximum operating voltage of 30V VDSS and can handle continuous drain currents up to 8.5A, demonstrating excellent current processing capabilities. Its conduction resistance RD (on) is only 15m R, effectively reducing power loss and improving system efficiency. Widely used in power conversion, motor drive, battery management systems and other fields, it is an ideal MOSFET solution for building efficient and energy-saving electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[AO4406A(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4406a-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:56:35</pubDate>
	<description><![CDATA[AO4406A is a high-performance N-channel MOSFET designed in SOP-8 packaging for efficient power conversion and motor drive applications. Its characteristics include a maximum working voltage VDSS of 30V, which can withstand continuous currents of up to 15A. Particularly outstanding is its ultra-low conduction resistance RD (on) of only 8mR, greatly reducing power loss and improving the system‘s energy efficiency ratio. This MOSFET is an ideal choice for various medium and low voltage switching circuits due to its excellent electrical performance and compact packaging.]]></description>
</item>
<item>
	<title><![CDATA[STS2DNF30L(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sts2dnf30l-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:56:22</pubDate>
	<description><![CDATA[STS2DNF30L is a high-performance N+N channel MOSFET, packaged in a compact SOP-8 package, designed to provide efficient power control solutions for modern electronic devices. The main features include a maximum working voltage of VDSS up to 30V, with a continuous drain current capability of 6A, ensuring strong current processing performance; Its low conduction resistance RD (on) design of 25m R effectively reduces power consumption and improves overall energy efficiency. Widely used in power conversion, motor drive, battery management systems and other fields, it is your ideal MOSFET choice for pursuing high integration and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[IRF9956PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf9956pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:56:10</pubDate>
	<description><![CDATA[The IRF9956PBF is packaged in SOP-8 and is a high-performance N+N channel MOSFET designed specifically for medium to high power applications. Its characteristic is that the maximum working voltage VDSS is 30V, it can carry a drain current of 6A, and has a conduction resistance RD (on) as low as 25m R, ensuring high efficiency and low power consumption. Widely used in power conversion, motor drive, battery management systems, and other applications, it is an ideal MOSFET device for achieving high integration and energy-saving goals.]]></description>
</item>
<item>
	<title><![CDATA[IRF7303PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7303pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:55:58</pubDate>
	<description><![CDATA[IRF7303PBF is a high-performance N+N channel MOSFET designed specifically for modern electronic devices in a compact SOP-8 package, providing excellent power control performance. Its key technical parameters include a maximum working voltage VDSS of 30V, which can stably handle 6A drain current and meet high current requirements; The conduction resistance RD (on) is only 25m R, effectively reducing power consumption and improving system energy efficiency. Widely used in power conversion, motor drive, battery management systems, and other fields, it is the ideal MOSFET choice for achieving high integration and energy-saving goals.]]></description>
</item>
<item>
	<title><![CDATA[SI4936CDY-T1-GE3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4936cdy-t1-ge3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:55:45</pubDate>
	<description><![CDATA[SI4936CDY-T1-GE3 is a high-performance N+N channel MOSFET, packaged in standard SOP-8 packaging, designed to provide powerful current processing capabilities for modern electronic devices. Its core advantage lies in its maximum working voltage VDSS of up to 30V, which can withstand 6A continuous drain current and meet high-power requirements; The conduction resistance RD (on) is as low as 25m R, effectively reducing system power consumption and improving energy efficiency. Widely used in power conversion, motor drive, battery management systems and other fields, it is the ideal MOSFET device choice for achieving efficient and energy-saving design.]]></description>
</item>
<item>
	<title><![CDATA[SI4936ADY-T1-E3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4936ady-t1-e3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:55:33</pubDate>
	<description><![CDATA[SI4936ADY-T1-E3 is a high-performance N+N channel MOSFET designed in a miniaturized SOP-8 package to provide efficient current control solutions for modern electronic devices. Its key features include a maximum working voltage of up to 30V VDSS, which can withstand 6A continuous drain current, ensuring strong power transmission; The ultra-low conduction resistance RD (on) of 25m R effectively reduces power loss and improves the overall energy efficiency of the system. Widely used in power conversion, motor drive, battery management systems and other fields, it is the ideal MOSFET choice for building high integration and energy-saving electronic products.]]></description>
</item>
<item>
	<title><![CDATA[FDS6930B(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds6930b-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:55:21</pubDate>
	<description><![CDATA[FDS6930B is a high-performance N+N channel MOSFET packaged in standard SOP-8, designed to provide excellent current processing capabilities for modern high-power density electronic devices. Its key features include a maximum operating voltage of up to 30V VDSS, which can stably conduct a drain current of 6A; Thanks to its ultra-low conduction resistance RD (on) of 25m R, the system power consumption has been significantly reduced and the overall energy efficiency has been improved. Widely used in power conversion, motor drive, battery management systems and other fields, it is the ideal MOSFET device choice for your pursuit of high efficiency and energy-saving design.]]></description>
</item>
<item>
	<title><![CDATA[ZXMN3A06DN8(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zxmn3a06dn8-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:55:09</pubDate>
	<description><![CDATA[ZXMN3A06DN8 is a high-performance N+N channel MOSFET that uses compact SOP-8 packaging technology to provide efficient current control for modern electronic devices. Its core advantage lies in the maximum working voltage VDSS reaching 30V, supporting a continuous drain current of 6A, ensuring excellent power transmission capability; The conduction resistance RD (on) is only 25m R, effectively reducing power loss and improving the overall energy efficiency of the system. Widely used in scenarios such as power conversion, motor drive, battery management systems, etc., it is an ideal MOSFET solution for designing highly integrated and energy-saving electronic products.]]></description>
</item>
<item>
	<title><![CDATA[SM4800PRL(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm4800prl-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:54:56</pubDate>
	<description><![CDATA[SM4800PRL is a high-performance N+N channel MOSFET designed in a compact SOP-8 package, specifically designed to provide powerful current control capabilities for high-efficiency electronic devices. Key features include a maximum operating voltage VDSS of 30V and support for continuous drain currents up to 6A, ensuring excellent performance in high-power applications; Its ultra-low conduction resistance RD (on) of 25m R effectively reduces power loss and improves system energy efficiency. Widely used in power conversion, motor drive, battery management systems and other fields, it is the ideal MOSFET choice for your pursuit of high integration and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[IRF7313PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7313pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:54:44</pubDate>
	<description><![CDATA[IRF7313PBF is a high-performance N+N channel MOSFET packaged in standard SOP-8, providing strong support for modern high-power density electronic designs. The device has excellent characteristics, with a maximum operating voltage of up to 30V VDSS, capable of carrying 6A continuous drain current, ensuring strong current processing capability; Its ultra-low conduction resistance RD (on) is only 25m R, effectively reducing power consumption and improving system efficiency. Widely used in power conversion, motor drive, battery management systems and other fields, it is the ideal MOSFET device choice for achieving efficient and energy-saving design.]]></description>
</item>
<item>
	<title><![CDATA[ZXMN2B14FH(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zxmn2b14fh-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:54:31</pubDate>
	<description><![CDATA[ZXMN2B14FH is an N-channel MOSFET designed for compact electronic devices in an economical and practical SOT-23 package. The device has excellent characteristics and the maximum working voltage VDSS is as high as 20V, which can stably carry 3A drain current; The conduction resistance RD (on) is only 45m R, effectively reducing system power consumption and improving energy efficiency ratio. Widely used in power conversion, load switch control, motor drive and other fields, it is your ideal MOSFET solution for pursuing high integration and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[SIS413DN-T1-GE3(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sis413dn-t1-ge3-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:54:19</pubDate>
	<description><![CDATA[SIS413DN-T1-GE3 P-channel MOSFET adopts a compact DFN3X3-8L package, designed specifically for space saving and high-density circuit design. The core parameters of this device have excellent rated voltage VDSS of up to 30V, providing a stable operating environment under 30V voltage; Supports continuous drain current of up to 55A, demonstrating strong current processing capabilities; The ultra-low conduction resistance RD (on) of 8m R ensures efficient and low-power operation. Widely used in scenarios such as power conversion, motor drive, and battery management systems, it is an ideal choice for modern high-performance electronic products.]]></description>
</item>
<item>
	<title><![CDATA[DMP3017SFGQ(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp3017sfgq-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:54:07</pubDate>
	<description><![CDATA[DMP3017SFGQ P-channel MOSFET adopts advanced DFN3X3-8L packaging technology, which is compact yet contains powerful energy. This device has a high rated voltage VDSS of 30V and a peak drain current of up to 55A, fully meeting the requirements of high-power applications. Especially outstanding is that its conduction resistance RD (on) is only 8m R, greatly reducing power loss and improving system efficiency. Suitable for various scenarios such as power conversion, battery protection boards, and motor drives, it is an ideal component for efficient and miniaturized electronic design.]]></description>
</item>
<item>
	<title><![CDATA[DMP3013SFV(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp3013sfv-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:53:54</pubDate>
	<description><![CDATA[DMP3013SFV P-channel MOSFET, using ultra small DFN3X3-8L packaging, designed specifically for high-density PCB layout, achieving spatial optimization. The core parameters of the device are excellent. The maximum working voltage VDSS is 30V, and it can withstand continuous drain currents of up to 55A, demonstrating strong power processing capabilities; Its eye-catching 8m R ultra-low conduction resistance RD (on) helps significantly reduce energy consumption and improve overall system efficiency. Especially suitable for high current switching, power management, and inverters, it is an ideal high-performance MOSFET solution for high-end electronic products.]]></description>
</item>
<item>
	<title><![CDATA[FDS6630A(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds6630a-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:53:42</pubDate>
	<description><![CDATA[FDS6630A N-channel MOSFET provides efficient space utilization with its compact SOP-8 packaging. This device has strong performance indicators, with a working voltage VDSS of up to 30V, and can withstand a maximum continuous drain current ID of 8.5A, demonstrating excellent load capacity. Especially outstanding is its conduction resistance RD (on) as low as 14m R, which effectively reduces power loss and improves energy efficiency. Suitable for various power conversion, motor drive and other application scenarios, it is your ideal choice for building high-performance and energy-saving electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[IRF7201(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7201-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:53:30</pubDate>
	<description><![CDATA[The IRF7201 N-channel MOSFET is designed with a sophisticated and durable SOP-8 packaging, specifically for the miniaturization needs of modern electronic devices. This device has excellent electrical parameters, with a maximum rated voltage VDSS of 30V, capable of carrying a continuous drain current of up to 8.5A, and its excellent on resistance is only 14m R, effectively reducing system losses and improving work efficiency. Whether in power management, motor drive, or various switch circuits, IRF7201 will be your ideal choice with its high performance and reliability.]]></description>
</item>
<item>
	<title><![CDATA[Si4128DY(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4128dy-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:53:17</pubDate>
	<description><![CDATA[We highly recommend this N-channel MOSFET with model Si4128DY, which is packaged in an efficient SOP-8 package and suitable for various compact circuit designs. Its outstanding performance includes a maximum withstand voltage of 30V (VDSS), a continuous drain current of up to 8.5A (ID), and an ultra-low on resistance (RD (on) of only 14m R, ensuring low power consumption and excellent thermal performance in high current applications. This MOSFET exhibits stable and reliable performance in power conversion, motor drive, and other electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[FDS6612A(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds6612a-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:53:05</pubDate>
	<description><![CDATA[The FDS6612A N-channel MOSFET adopts SOP-8 packaging and is specifically developed for high efficiency and high current applications. This device has a maximum drain source voltage (VDSS) of 30V and can stably carry a continuous current of 8.5A. Its conduction resistance is as low as 14m R, ensuring excellent energy efficiency and low power consumption under high loads. Widely used in power conversion, motor drive, load switch and other occasions, it provides strong support for circuit design with excellent current processing ability and excellent electrical performance.]]></description>
</item>
<item>
	<title><![CDATA[Si4134DY(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4134dy-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:52:53</pubDate>
	<description><![CDATA[Si4134DY N-channel MOSFET adopts a compact SOP-8 package, designed specifically for high current and high efficiency applications. This device has a maximum drain source voltage (VDSS) of 30V, can support 8.5A continuous current, and has a conduction resistance of only 14m R, ensuring excellent energy efficiency and low power consumption performance even under high load conditions. Widely used in power conversion, motor drive, load switch and other fields, it has become an ideal component for circuit design due to its excellent current processing ability and stable electrical performance.]]></description>
</item>
<item>
	<title><![CDATA[Si4178DY(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4178dy-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:52:40</pubDate>
	<description><![CDATA[Si4178DY N-channel MOSFET adopts SOP-8 packaging, designed specifically for high-efficiency and high current applications. The device provides a maximum drain source voltage (VDSS) of 30V and can support 8.5A continuous current. Its conduction resistance is as low as 14m R, ensuring excellent energy efficiency and low power consumption even under high load conditions. Widely used in scenarios such as power conversion, motor drive, and load switching, it has become an ideal choice for circuit designers due to its excellent current processing ability and reliable electrical performance.]]></description>
</item>
<item>
	<title><![CDATA[IRF9410PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf9410pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:52:28</pubDate>
	<description><![CDATA[The IRF9410PBF N-channel MOSFET adopts SOP-8 packaging and is designed for high efficiency and high current applications. This device has a maximum drain source voltage of 30V (VDSS) and can withstand a continuous current of 8.5A, with a conduction resistance of only 14m R, ensuring excellent energy efficiency and low power consumption even under high loads. Widely used in power conversion, motor drive, switching power supply and other fields, it has become an ideal component for circuit design due to its powerful current processing ability and excellent electrical performance.]]></description>
</item>
<item>
	<title><![CDATA[SI4346DY-T1-E3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4346dy-t1-e3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:52:15</pubDate>
	<description><![CDATA[SI4346DY-T1-E3 N-channel MOSFET adopts SOP-8 packaging, designed specifically for high efficiency and high current applications. This device provides a maximum drain source voltage (VDSS) of 30V, can carry a continuous current of 8.5A, and has a conduction resistance of only 14m R, ensuring excellent energy efficiency and low loss under high current conditions. Widely used in power conversion, motor drive, load switching and other scenarios, with its excellent current processing ability and stable electrical performance, it has become a high-quality choice for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[FDS8884(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds8884-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:52:03</pubDate>
	<description><![CDATA[The FDS8884 N-channel MOSFET adopts SOP-8 packaging, specifically developed for high-efficiency and high current applications. The device has a maximum drain source voltage (VDSS) of 30V, can withstand a continuous current of 8.5A, and has a conduction resistance of only 14m R, ensuring excellent energy efficiency and low power consumption even during high current operation. Widely used in power conversion, motor drive, load switch and other fields, with excellent current processing ability and stable electrical performance, we provide strong support for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[SM4496PRL(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm4496prl-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:51:51</pubDate>
	<description><![CDATA[The SM4496PRL N-channel MOSFET adopts a compact SOP-8 package, designed specifically for high-power, high-efficiency electronic devices. This device provides a maximum drain source voltage (VDSS) of 30V, can stably handle 8.5A continuous current, and has a conduction resistance of only 14m R, ensuring excellent energy efficiency and low loss in high current applications. Widely used in scenarios such as power conversion, motor drive, and load switching, it has become an ideal component for circuit design due to its powerful current processing ability and excellent electrical performance.]]></description>
</item>
<item>
	<title><![CDATA[SI4410BDY-T1-GE3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4410bdy-t1-ge3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:51:39</pubDate>
	<description><![CDATA[SI4410BDY-T1-GE3 N-channel MOSFET adopts SOP-8 packaging, designed specifically for high efficiency and high current applications. This device has a maximum drain source voltage (VDSS) of 30V, can carry a continuous current of 8.5A, and has a conduction resistance as low as 14m R, ensuring excellent energy efficiency and low power consumption under high load conditions. Widely used in power conversion, motor drive, load switching and other applications, it has become an ideal choice for circuit design due to its excellent current processing ability and stable electrical performance.]]></description>
</item>
<item>
	<title><![CDATA[SI4410BDY-T1-E3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4410bdy-t1-e3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:51:26</pubDate>
	<description><![CDATA[SI4410BDY-T1-E3 N-channel MOSFET adopts SOP-8 packaging and is a semiconductor device designed specifically for high efficiency and high current applications. Equipped with a maximum leakage source voltage (VDSS) of 30V, capable of stably carrying a continuous current of 8.5A, and with a conductivity resistance as low as 14m R, ensuring excellent energy efficiency and low loss characteristics even under high current conditions. Widely used in industries such as power conversion, motor drive, load switching, etc., with excellent current processing ability and excellent electrical performance, it becomes the ideal component for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[AO4404B(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4404b-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:51:13</pubDate>
	<description><![CDATA[The AO4404B N-channel MOSFET adopts a compact SOP-8 package, specifically designed for high-efficiency and high current applications. The device provides a maximum drain source voltage (VDSS) of 30V, with a continuous current carrying capacity of 8.5A, and a conducting resistance of only 14m R, ensuring excellent energy efficiency and low power consumption in high voltage and high current environments. Widely used in power conversion, motor drive, load switch and other fields, with its excellent current processing ability and stable electrical performance, it becomes the ideal choice for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[Si4178DY-T1-GE3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4178dy-t1-ge3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:51:01</pubDate>
	<description><![CDATA[Si4178DY-T1-GE3 N-channel MOSFET adopts SOP-8 packaging form, designed specifically for high-efficiency and high current applications. The device provides a maximum drain source voltage (VDSS) of 30V and can stably transmit 8.5A continuous current. Its excellent on resistance is only 14m R, ensuring high efficiency and low power consumption under high load conditions. Widely used in power conversion, motor drive, load switching and other scenarios, with excellent current processing ability and excellent electrical performance, we provide strong support for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[IRF7807ZPBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7807zpbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:50:48</pubDate>
	<description><![CDATA[The IRF7807ZPBF N-channel MOSFET adopts SOP-8 packaging, designed specifically for high-power and high-efficiency electronic devices. This device has a maximum drain source voltage (VDSS) of 30V and can smoothly handle 8.5A continuous current. Coupled with its low on resistance of 14m R, it can achieve excellent energy efficiency and low-power operation in high current application scenarios. Widely used in power conversion, motor drive, switch circuit and other fields, with its outstanding current carrying capacity and stable electrical performance, it becomes an ideal partner for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[IRF7807PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7807pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:50:33</pubDate>
	<description><![CDATA[The IRF7807PBF N-channel MOSFET adopts a compact SOP-8 package, customized for high efficiency and high current applications. The device has a maximum drain source voltage (VDSS) of 30V, can carry a continuous current of 8.5A, and has a conductivity resistance as low as 14m R, ensuring high energy efficiency and low loss even during high current operation. Widely used in power conversion, motor drive, switching power supply and other fields, with its excellent current processing ability and reliable electrical performance, it provides strong support for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[IRF7403PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7403pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:50:20</pubDate>
	<description><![CDATA[The IRF7403PBF N-channel MOSFET adopts SOP-8 packaging, designed specifically for high efficiency and high current applications. This device has a maximum drain source voltage (VDSS) of 30V, can stably transmit 8.5A continuous current, and has a conduction resistance of only 14m R, ensuring excellent energy efficiency and low loss under high-intensity loads. Widely used in various fields such as power conversion, motor drive, load switching, etc., with its powerful current processing ability and excellent electrical performance, it has become an ideal semiconductor component for optimizing circuit design.]]></description>
</item>
<item>
	<title><![CDATA[DMN3018SSD(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn3018ssd-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:50:08</pubDate>
	<description><![CDATA[The DMN3018SSD N-channel MOSFET adopts the industry standard SOP-8 packaging, providing excellent performance for high-power applications. This device has a maximum drain source voltage of 30V (VDSS) and can continuously output 8.5A current, while a 14m R conduction resistance maintains low power consumption and high efficiency during high current transmission. Widely used in power conversion, motor drive, load switch and other scenarios, with excellent current carrying capacity and stable electrical performance, it becomes your powerful assistant in circuit design.]]></description>
</item>
<item>
	<title><![CDATA[DMG4496SSS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg4496sss-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:49:55</pubDate>
	<description><![CDATA[DMG4496SSS N-channel MOSFET adopts SOP-8 packaging, specially designed for high efficiency and high current applications. The device provides a maximum drain source voltage (VDSS) of 30V and can stably carry a continuous current of 8.5A. Its on resistance is only 14m R, ensuring excellent energy conversion efficiency and low power consumption characteristics under high load conditions. Widely used in various scenarios such as power conversion, motor drive, switch controller, etc., with powerful current processing ability and excellent electrical performance, it becomes your ideal choice for optimizing circuit design.]]></description>
</item>
<item>
	<title><![CDATA[AO4466(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4466-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:49:43</pubDate>
	<description><![CDATA[AO4466 N-channel MOSFET adopts SOP-8 packaging and is an efficient semiconductor device designed specifically for high current applications. This device has a maximum drain source voltage (VDSS) of 30V, can stably transmit a continuous current of 8.5A, and has a conduction resistance of only 14m R, ensuring low power consumption and high efficiency operation under high current conditions. Widely used in power management, motor drives, switch circuits and other fields, with its excellent current carrying capacity and excellent electrical performance, it provides strong support for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[SI4800BDY-T1-GE3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4800bdy-t1-ge3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:49:31</pubDate>
	<description><![CDATA[The SI4800BDY-T1-GE3 N-channel MOSFET adopts a compact SOP-8 package, designed specifically for efficient power management and motor control. This device has a maximum drain source voltage (VDSS) of 30V, can provide continuous current of up to 8.5A, and has a conduction resistance as low as 14m R, ensuring excellent performance and energy efficiency in high current application environments. Widely used in power conversion, motor drive, load switching and other scenarios, it brings powerful current processing capabilities and outstanding electrical performance to your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[NTMD4820NR2G(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntmd4820nr2g-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:49:19</pubDate>
	<description><![CDATA[NTMD4820NR2G N-channel MOSFET adopts SOP-8 packaging, suitable for high-efficiency circuit design. This device has a maximum drain source voltage (VDSS) of 30V, can easily handle continuous currents up to 8.5A, and has a conduction resistance of only 14m R, ensuring excellent energy efficiency and low power consumption in high current applications. Widely used in power conversion, motor drive, load switch and other fields, with its excellent current processing ability and excellent electrical performance, it becomes the ideal choice for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[DMN3018SSS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn3018sss-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:49:06</pubDate>
	<description><![CDATA[The DMN3018SSS N-channel MOSFET adopts a compact SOP-8 package, designed specifically for high-efficiency circuits. The device parameters are excellent, with a maximum drain source voltage (VDSS) of 30V, capable of carrying a continuous current of 8.5A, and a conduction resistance as low as 14m R, ensuring excellent energy efficiency performance in high current applications. Widely used in power conversion, motor control, fast switching and other scenarios, with its excellent current carrying capacity and high electrical performance, it provides strong support for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[DMG4466SSS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg4466sss-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:48:54</pubDate>
	<description><![CDATA[The DMG4466SSS N-channel MOSFET is designed for high-performance power applications using standard SOP-8 packaging. This device has a maximum drain source voltage of 30V (VDSS) and can stably deliver a continuous current of 8.5A, with a conduction resistance of only 14m R, ensuring high efficiency and low loss. Widely used in power management, motor drive, load switching and other fields, with its excellent current processing ability and high-quality electrical performance, it provides an ideal solution for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[DMN2020LSN(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn2020lsn-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:48:42</pubDate>
	<description><![CDATA[DMN2020LSN N-channel MOSFET adopts a compact SOT-23 package, designed specifically for high-performance electronic devices. This device has a maximum drain source voltage (VDSS) of 20V and can handle continuous currents up to 5A, with a conduction resistance as low as 14m R, ensuring efficient and stable operation of the system under high current transmission. Widely suitable for various application scenarios that require high-performance N-channel MOSFETs such as power conversion, motor control, load switching, etc., it is your ideal choice for optimizing circuit design and improving system efficiency.]]></description>
</item>
<item>
	<title><![CDATA[IRF7424TR(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7424tr-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:48:29</pubDate>
	<description><![CDATA[IRF7424TR is a P-channel MOSFET designed with SOP-8 packaging for high current and high efficiency applications. The device supports a maximum drain source voltage of 30V (VDSS) and can safely handle continuous drain current of up to 12A, demonstrating strong current carrying capacity. Its unique 10m R ultra-low conduction resistance (RD (on)) design effectively improves system energy efficiency and reduces losses. Widely used in power conversion, motor drive, high current switching circuits and other fields, it is an important component of high-power and high-performance electronic products.]]></description>
</item>
<item>
	<title><![CDATA[FDS6675BZ(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds6675bz-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:48:17</pubDate>
	<description><![CDATA[The FDS6675BZ P-channel MOSFET adopts the SOP-8 packaging process, designed specifically for high-efficiency and high current applications. This device has a maximum drain source voltage (VDSS) of 30V and can continuously carry large currents of up to 12A. Its outstanding advantage lies in a conductivity resistance of only 10m R, ensuring excellent energy efficiency performance even in high power conditions. Widely used in power conversion, motor drive, load switch and other fields, with strong current processing ability and excellent electrical performance, we provide strong support for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[FDS6675(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds6675-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:48:05</pubDate>
	<description><![CDATA[The FDS6675 P-channel MOSFET adopts a compact SOP-8 package, which has excellent current processing capability. The characteristic of the device is a maximum drain source voltage (VDSS) of 30V, which can stably transmit continuous currents up to 12A, and the conduction resistance is as low as 10m R, which helps to enhance system efficiency and reduce energy consumption. Widely used in high current application scenarios such as power conversion, motor control, and load switching, it has become an ideal semiconductor component for optimizing circuit design due to its excellent performance and high reliability.]]></description>
</item>
<item>
	<title><![CDATA[NTMS4177P(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntms4177p-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:47:52</pubDate>
	<description><![CDATA[The NTMS4177P P-channel MOSFET adopts an economical and practical SOP-8 packaging, designed specifically for high current application requirements. The device has a maximum drain source voltage (VDSS) of 30V, can withstand a strong continuous current of 12A, and has a conduction resistance of only 10m R, ensuring high energy efficiency and low heat loss under high-power operation. Widely used in power conversion, motor drive control, battery management systems and other fields, with its excellent current carrying capacity and good electrical performance, it provides solid support for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[IRF9328PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf9328pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:47:40</pubDate>
	<description><![CDATA[The IRF9328PBF P-channel MOSFET adopts SOP-8 packaging and is designed specifically for high-power applications. The device features a maximum drain source voltage (VDSS) of 30V, continuous current processing capability of up to 12A, and a conduction resistance as low as 10m R, effectively improving system efficiency and reducing energy loss. Widely used in power management, inverters, motor drives, and other applications that require high current processing requirements, it is an ideal choice for optimizing circuit design with excellent performance and reliability.]]></description>
</item>
<item>
	<title><![CDATA[IRF7424PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7424pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:47:28</pubDate>
	<description><![CDATA[The IRF7424PBF P-channel MOSFET is packaged in standard SOP-8, specifically designed for high current application environments. It has a maximum drain source voltage (VDSS) of 30V and can safely handle continuous currents up to 12A in the system, thanks to a conductivity resistance of only 10m R, greatly improving overall energy efficiency performance. This device is widely used in power conversion, motor drive, battery protection and other fields, providing strong support for your circuit design with excellent current processing ability and excellent energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[BSO130P03SH(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bso130p03sh-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:47:16</pubDate>
	<description><![CDATA[BSO130P03SH P-channel MOSFET adopts SOP-8 packaging, designed specifically for high current and high-efficiency applications. The highlight of the device lies in its maximum drain source voltage (VDSS) of 30V and its ability to withstand continuous currents of up to 12A. Its excellent on resistance is only 10m R, greatly improving system energy efficiency and stability. Widely applicable in various high current processing scenarios such as power switching, battery management systems, inverter circuits, etc., with strong performance and reliability, it injects surging power into your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[Si2308CDS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2308cds-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:47:03</pubDate>
	<description><![CDATA[The Si2308CDS N-channel MOSFET adopts a sophisticated SOT-23 packaging, aimed at meeting the miniaturization needs of modern electronic products. This device has strong performance, with a maximum drain source voltage of 60V (VDSS), can stably carry 3A current, and has a conduction resistance as low as 72m R, effectively ensuring high efficiency and low energy consumption of system operation. Widely used in various fields such as power management, motor drive, switch regulation, etc., empowering your circuit design with excellent performance and high reliability, achieving excellent system performance.]]></description>
</item>
<item>
	<title><![CDATA[ZXMN6A07F(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zxmn6a07f-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:46:51</pubDate>
	<description><![CDATA[The ZXMN6A07F N-channel MOSFET adopts space saving SOT-23 packaging technology, providing a flexible and efficient solution for your circuit design. The key performance indicators of this device are excellent, with a maximum drain source voltage (VDSS) of 60V, supporting continuous currents up to 3A, and a conduction resistance as low as 72m R, ensuring low power consumption and high performance in various applications. Widely used in power conversion, motor drive, load switching and other scenarios, with excellent performance and reliability, it helps your electronic projects achieve higher levels of performance optimization.]]></description>
</item>
<item>
	<title><![CDATA[NTR5198NL(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntr5198nl-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:46:38</pubDate>
	<description><![CDATA[The NTR5198NL N-channel MOSFET adopts a lightweight SOT-23 packaging form, focusing on efficient integration and space saving design solutions. This device performs excellently, with a maximum drain source voltage (VDSS) of 60V, capable of carrying 3A continuous current, and equipped with an ultra-low on resistance of 72m R, ensuring excellent energy efficiency and low heat generation performance. Widely used in various scenarios such as power management, motor drives, and switch circuits, your electronic products are endowed with stronger performance potential with excellent performance indicators and high reliability.]]></description>
</item>
<item>
	<title><![CDATA[SQ2308CES-T1_GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sq2308ces-t1_ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:46:26</pubDate>
	<description><![CDATA[The SQ2308CES-T1_GE3 N-channel MOSFET adopts a compact SOT-23 package, specifically designed for miniaturization in modern electronic devices. The device has powerful performance parameters, with a maximum drain source voltage (VDSS) of up to 60V, a continuous current (ID) of up to 3A, and a conduction resistance (RD (on) of only 72m R, ensuring excellent energy efficiency and heat dissipation performance under high load conditions. Widely suitable for power conversion, motor drive, load switching and other application scenarios, we provide you with the best choice for circuit design with excellent efficiency and stability.]]></description>
</item>
<item>
	<title><![CDATA[DMN6140L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn6140l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:46:14</pubDate>
	<description><![CDATA[The DMN6140L N-channel MOSFET adopts a sophisticated SOT-23 packaging, which is particularly suitable for the miniaturization needs of modern electronic products. This device has superior performance, with a maximum drain source voltage (VDSS) of 60V, can withstand continuous currents of up to 3A, and is equipped with a low on resistance of 72m R, ensuring excellent energy efficiency performance in high-power applications. Widely used in various scenarios such as power converters, motor drives, and switch circuit designs, empowering your circuit design with powerful performance and stable quality, achieving a dual improvement of excellent performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[DMN6075S(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn6075s-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:46:01</pubDate>
	<description><![CDATA[The DMN6075S N-channel MOSFET adopts a compact SOT-23 package, combining efficiency and compactness. This device stands out with outstanding parameters, including a maximum drain source voltage (VDSS) of 60V, 3A continuous drain current capability, and a conduction resistance as low as 72m R, effectively ensuring the high efficiency and low power consumption operation of the system. Widely used in power conversion, load switching, motor drive and other fields, adding strong power to your circuit design with powerful performance and reliable quality.]]></description>
</item>
<item>
	<title><![CDATA[ST3426(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/st3426-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:45:49</pubDate>
	<description><![CDATA[ST3426 is an N-channel MOSFET, designed for efficient space utilization in a compact SOT-23 package. This device has excellent specifications, with a maximum steady-state voltage of 60V (VDSS), a rated current of up to 3A, and a conduction resistance of only 72m R, ensuring lower power loss and higher energy efficiency performance. Widely used in power management, switch regulators, motor drives and other scenarios, with its high-performance, stable and durable characteristics, it becomes the ideal component choice for your electronic project.]]></description>
</item>
<item>
	<title><![CDATA[Si2308BDS-T1-E3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2308bds-t1-e3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:45:36</pubDate>
	<description><![CDATA[Si2308BDS-T1-E3 N-channel MOSFET adopts a miniaturized SOT-23 package, providing a solution specifically for high-density electronic design. This device has powerful performance, with a working voltage of up to 60V, a continuous output current of 3A, and an excellent on resistance of only 72m R, significantly improving system efficiency and reducing energy consumption. Suitable for a wide range of applications such as power conversion, load switching, and motor drive, with excellent quality and reliable performance, help your circuit design achieve efficiency upgrades.]]></description>
</item>
<item>
	<title><![CDATA[IRLML0060PBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml0060pbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:45:24</pubDate>
	<description><![CDATA[This IRLML0060PBF N-channel MOSFET adopts a high-efficiency SOT-23 package, suitable for compact circuit design. It has excellent electrical performance, with a withstand voltage of up to 60V, a continuous current of up to 3A, and a conductivity resistance as low as 72m R, ensuring the high efficiency and low losses of the equipment during operation. Its excellent quality and reliability are suitable for various high-end power conversion, motor drive, and switch control applications, making it your ideal choice for optimizing system performance.]]></description>
</item>
<item>
	<title><![CDATA[TPC8126(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/tpc8126-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:45:12</pubDate>
	<description><![CDATA[TPC8126 is a high-performance P-channel MOSFET designed with SOP-8 packaging for high current applications and high efficiency. The device has a maximum drain source voltage (VDSS) of 30V and can withstand continuous drain current of up to 18A, demonstrating excellent power processing capabilities. Its unique advantage lies in its ultra-low conduction resistance (RD (on) of only 7.5m R, ensuring high energy efficiency and low losses even during high current operation. It is suitable for power conversion, motor drive, switch circuit control, and other fields, making it an ideal choice for pursuing high-quality semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[IRF9388PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf9388pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:45:00</pubDate>
	<description><![CDATA[IRF9388PBF is a high-performance P-channel MOSFET designed for high current, low loss applications using SOP-8 packaging. This device has a maximum drain source voltage of 30V (VDSS) and can easily handle continuous drain current of 18A, demonstrating its excellent power processing performance. Its outstanding advantage lies in its ultra-low conduction resistance (RD (on) of 7.5m R, ensuring high efficiency and low loss even in high current operating conditions. Widely used in power conversion, motor drive, switch mode power supply control and other fields, it is the preferred semiconductor component for pursuing efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[FDS6679AZ(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds6679az-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:44:47</pubDate>
	<description><![CDATA[FDS6679AZ is a P-channel MOSFET designed in a compact SOP-8 package for high current applications and high efficiency. This device supports a drain source voltage (VDSS) of up to 30V and can stably handle a continuous drain current of 18A, presenting strong power management capabilities. Its uniqueness lies in its ultra-low conduction resistance (RD (on) of only 7.5m R, ensuring high efficiency and low heat loss even under high current conditions. Widely used in power conversion, motor drive, switch circuit control and other fields, it is your ideal choice for achieving high energy efficiency semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[FDS6673BZ(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds6673bz-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:44:35</pubDate>
	<description><![CDATA[FDS6673BZ is a P-channel MOSFET designed with SOP-8 packaging for high efficiency and low loss high current applications. The device has a maximum drain source voltage (VDSS) of 30V and can withstand continuous drain current of up to 18A, ensuring excellent power transmission performance. Its ultra-low conduction resistance (RD (on) of 7.5m R significantly improves system energy efficiency and reduces operational losses. Widely used in fields such as power conversion, motor drive, and switch mode power supply controllers, it is an ideal semiconductor component for high demand electronic design.]]></description>
</item>
<item>
	<title><![CDATA[SI4427BDY-T1-E3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4427bdy-t1-e3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:44:23</pubDate>
	<description><![CDATA[SI4427BDY-T1-E3 is a P-channel MOSFET designed for high-performance, low loss applications in a compact SOP-8 package. This device has a maximum drain source voltage (VDSS) of 30V and can withstand continuous drain current of up to 18A, highlighting its excellent current processing performance. Its conduction resistance RD (on) is only 7.5m R, helping to achieve high energy efficiency and low loss power conversion. Widely used in power management, motor drives, fast switching circuits, and other applications, it is an ideal semiconductor component that pursues high efficiency and reliability.]]></description>
</item>
<item>
	<title><![CDATA[IRF9321PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf9321pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:44:10</pubDate>
	<description><![CDATA[IRF9321PBF is a P-channel MOSFET designed for high current applications using SOP-8 packaging. This device has a maximum drain source voltage (VDSS) of 30V and can withstand continuous drain current of up to 18A, demonstrating excellent current processing capabilities. Its unique advantage lies in its ultra-low conduction resistance (RD (on) of 7.5m R, which effectively improves system energy efficiency and reduces losses while ensuring high-power operation. Widely used in power conversion, motor drive, fast switching circuits and other fields, it is an ideal semiconductor device that pursues high performance and low power consumption.]]></description>
</item>
<item>
	<title><![CDATA[DMP3015LSS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp3015lss-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:43:58</pubDate>
	<description><![CDATA[DMP3015LSS is a P-channel MOSFET designed for high current and low power applications in a compact SOP-8 package. This device can withstand a maximum drain source voltage of 30V (VDSS) and can withstand continuous drain current of up to 18A, demonstrating strong current processing performance. Its key feature is an ultra-low conduction resistance (RD (on) of 7.5m R, which ensures a high energy efficiency ratio and reduces losses even during high current transmission. Widely used in power management, motor drives, fast switching circuits, and other fields, it is an ideal choice for pursuing efficient and energy-saving semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[DMG4413LSS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg4413lss-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:43:45</pubDate>
	<description><![CDATA[DMG4413LSS is a P-channel MOSFET designed in a compact SOP-8 package specifically for high current applications and energy efficiency. This device supports a maximum drain source voltage of 30V (VDSS) and can withstand continuous drain current of up to 18A, demonstrating excellent power processing capabilities. Its conduction resistance (RD (on)) is only 7.5m R, ensuring high efficiency and low loss under high-power operation. Widely used in power conversion, inverters, high current switching circuits and other fields, it is an ideal choice for high-efficiency and low impedance semiconductor components.]]></description>
</item>
<item>
	<title><![CDATA[DMG4407SSS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg4407sss-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:43:33</pubDate>
	<description><![CDATA[DMG4407SSS is a P-channel MOSFET designed for efficient and low-power applications using a miniaturized SOP-8 package. This device can operate stably at a VDSS voltage of 30V, providing a continuous drain current of up to 18A, demonstrating excellent current processing capabilities. Its highlight lies in the ultra-low conduction resistance RD (on) of 7.5m R, which effectively improves energy efficiency and reduces system losses. Widely used in power management, inverters, high-frequency switching circuits, and other applications, it is an ideal semiconductor device for pursuing high-performance and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[IRLR2703(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlr2703-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:43:21</pubDate>
	<description><![CDATA[IRLR2703 is a high-performance N-channel MOSFET designed to handle high current and high efficiency applications in a standard TO-252-2L package. The device has a maximum drain source voltage of 30V (VDSS) and can safely conduct continuous drain current of up to 20A, demonstrating strong current transfer capability. Its highlight lies in its ultra-low conduction resistance (RD (on) of only 15m R, achieving excellent energy conversion efficiency and reducing power loss. Widely used in various fields such as power conversion, motor drive, and high current switching circuits, it is an ideal semiconductor component for building efficient and reliable electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[STD17NF03LT4(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/std17nf03lt4-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:43:08</pubDate>
	<description><![CDATA[STD17NF03LT4 is an N-channel MOSFET designed for high current and high efficiency applications in a TO-252-2L package. The device supports a maximum drain source voltage of 30V (VDSS) and can safely handle continuous drain current of up to 20A, demonstrating strong current carrying capacity. Its unique 15m R ultra-low conduction resistance (RD (on)) design effectively improves system energy efficiency and reduces losses. Widely used in power conversion, motor drive, high current switching circuits and other fields, it is an important component of high-power and high-performance electronic products.]]></description>
</item>
<item>
	<title><![CDATA[FDD6612A(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdd6612a-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:42:56</pubDate>
	<description><![CDATA[FDD6612A is a high-performance N-channel MOSFET designed to handle high current and high-power applications using TO-252-2L packaging technology. This device has a maximum drain source voltage (VDSS) of 30V and can withstand continuous drain current of up to 20A, ensuring excellent power transmission performance. Its conduction resistance RD (on) is only 15m R, greatly improving energy efficiency and reducing system losses. Widely used in power conversion, motor drive, and high current switch control, it is a high-quality semiconductor component choice for pursuing high efficiency and high current applications.]]></description>
</item>
<item>
	<title><![CDATA[FDD6630A(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdd6630a-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:42:44</pubDate>
	<description><![CDATA[FDD6630A is an N-channel MOSFET designed in the TO-252-2L packaging for high-power and high current applications. This device supports a drain source voltage (VDSS) of up to 30V and can stably carry a continuous drain current of 20A, demonstrating excellent current processing capabilities. Its key feature is a low on resistance (RD (on) of only 15m R, which effectively improves system efficiency and reduces power loss. Widely used in fields such as power conversion, motor drive, and high current switching circuits, it is an ideal semiconductor component that pursues high efficiency and durable performance.]]></description>
</item>
<item>
	<title><![CDATA[AOD484(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod484-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:42:31</pubDate>
	<description><![CDATA[AOD484 is an N-channel MOSFET designed for high current applications using standard TO-252-2L packaging. This device can withstand a maximum drain source voltage of 30V (VDSS) and can withstand continuous drain current (ID) of up to 20A, demonstrating excellent current processing performance. Its characteristic lies in its only 15m R ultra-low conduction resistance (RD (on)), ensuring high energy efficiency and low heat loss even under high-power operation. Widely used in power conversion, high current switching circuits, motor drives, etc., it is an ideal semiconductor component for high-end electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[STN4102(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/stn4102-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:42:19</pubDate>
	<description><![CDATA[STN4102 is a high-performance N-channel MOSFET designed to handle high current applications in a TO-252-2L package. The device has a maximum drain source voltage (VDSS) of 30V and can stably carry continuous drain current of up to 20A, demonstrating excellent power transmission capability. Its core highlight lies in its low on resistance (RD (on) of only 15m R, ensuring the high efficiency and low loss of the system under high-power operation. Widely used in power conversion, high current switching circuits, and motor drives, it is an ideal semiconductor device that pursues high performance and efficiency.]]></description>
</item>
<item>
	<title><![CDATA[SM480T9RL(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm480t9rl-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:42:07</pubDate>
	<description><![CDATA[SM480T9RL is an N-channel MOSFET designed for high current applications using standard TO-252-2L packaging. This device supports a maximum drain source voltage of 30V VDSS and can stably carry continuous drain current of up to 20A, demonstrating its excellent current processing capability. Its outstanding feature lies in its ultra-low conduction resistance RD (on) of only 15m R, which effectively improves system energy efficiency and reduces losses. Widely used in industries such as power conversion, high current switching circuits, and motor drives, it is an ideal choice for seeking high-power and high-efficiency semiconductor components.]]></description>
</item>
<item>
	<title><![CDATA[NTD20N03L27(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntd20n03l27-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:41:55</pubDate>
	<description><![CDATA[NTD20N03L27 is a high-performance N-channel MOSFET designed for high-power applications in a TO-252-2L package. This device has a VDSS voltage tolerance of 30V and can withstand continuous drain current ID of up to 20A, demonstrating excellent current processing performance. Its highlight lies in the ultra-low conduction resistance RD (on) of only 15m R, which significantly improves energy efficiency and reduces system heating. Widely used in power converters, high current switching circuits, motor drives, and other fields, it is an ideal semiconductor component for pursuing high efficiency and high current applications.]]></description>
</item>
<item>
	<title><![CDATA[IRLR3103PBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlr3103pbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:41:42</pubDate>
	<description><![CDATA[IRLR3103PBF is a high-performance N-channel MOSFET designed for high-power applications in a TO-252-2L package. The device provides a 30V VDSS withstand voltage value and supports a continuous drain current ID of up to 20A, demonstrating strong current processing capabilities. Its conduction resistance RD (on) is only 15m R, ensuring excellent energy efficiency performance and reducing system losses. Suitable for power conversion, high current switch control, motor drive and other fields, it is an ideal semiconductor device for achieving high efficiency and high current operation.]]></description>
</item>
<item>
	<title><![CDATA[ZXMN3B01F(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zxmn3b01f-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:41:29</pubDate>
	<description><![CDATA[ZXMN3B01F is an N-channel MOSFET designed in a compact SOT-23 package to optimize space usage and maintain high performance. This device supports a drain source voltage of 30V (VDSS) and has a continuous drain current (ID) of 5A, ensuring stability in high-power applications. Its conduction resistance (RD (on)) is only 33m R, which helps to significantly improve system efficiency and reduce energy consumption. This MOSFET is widely used in power conversion, motor drive, load switching and other scenarios, and is an excellent semiconductor component that pursues efficiency and miniaturization.]]></description>
</item>
<item>
	<title><![CDATA[DMN3730U(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn3730u-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:41:17</pubDate>
	<description><![CDATA[The DMN3730U N-channel MOSFET adopts a miniaturized SOT-23 package, specifically designed for efficient and space saving design solutions. This device has excellent performance, with a rated voltage of up to 30V VDSS and a continuous drain current ID of 5A, fully meeting the needs of high-power applications. Its highlight lies in its ultra-low conduction resistance RD (on) of only 33m R, which helps to reduce energy loss and improve overall efficiency. It is a high-quality semiconductor solution in fields such as power conversion and motor drive.]]></description>
</item>
<item>
	<title><![CDATA[DMN3300U(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn3300u-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:41:05</pubDate>
	<description><![CDATA[This N-channel MOSFET with DMN3300U model adopts a compact SOT-23 package, suitable for various precision electronic devices. Its core parameters are powerful, with a maximum drain source voltage of 30V VDSS and a continuous drain current ID of 5A, ensuring efficient power transmission capability. Especially outstanding is its conduction resistance RD (on) as low as 33m R, which effectively reduces power consumption and improves system energy efficiency, making it an ideal choice for high reliability and high-performance power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[IRLML6346PBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml6346pbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:40:53</pubDate>
	<description><![CDATA[IRLML6346PBF is a high-performance N-channel MOSFET designed for miniaturization in modern electronic devices using a compact SOT-23 package. It supports a drain source voltage (VDSS) of up to 30V and can easily handle 5A continuous drain current (ID), ensuring strong current handling capability and excellent system stability. The conduction resistance (RD (on)) is only 33m R, which helps to significantly reduce power consumption and improve overall energy efficiency. Widely used in various fields such as power conversion, motor drive, battery management, etc., it is an ideal choice for compact and efficient semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[DMN3150L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn3150l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:40:40</pubDate>
	<description><![CDATA[DMN3150L is a sophisticated N-channel MOSFET designed specifically for compact circuits in a small SOT-23 package. The core advantage of the device is that it has a maximum drain source withstand voltage (VDSS) of 30V and can sustainably carry a drain current (ID) of 5A, ensuring strong and stable current processing performance. Especially outstanding is its conduction resistance (RD (on)) as low as 33m R, which effectively reduces power consumption and improves system energy efficiency. This MOSFET is widely used in power conversion, load switching, and various scenarios that require efficient and low impedance semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[DMG3402L(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg3402l-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:40:28</pubDate>
	<description><![CDATA[DMG3402L is an efficient N-channel MOSFET that uses a miniaturized SOT-23 package, particularly suitable for the internal layout of compact electronic products. Its main features include a maximum drain source voltage of 30V (VDSS) and excellent 5A continuous drain current (ID), ensuring strong current processing capabilities and stable operating conditions. In addition, its excellent conduction resistance (RD (on)) is only 33m R, greatly reducing system power consumption and improving overall energy efficiency. This MOSFET is widely used in various scenarios such as power management, motor driving, and load switching, making it an ideal choice for achieving efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[PMV40UN2R(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/pmv40un2r-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:40:16</pubDate>
	<description><![CDATA[The PMV40UN2R N-channel MOSFET adopts a space saving SOT-23 package, designed specifically for optimizing circuit layout. The device supports a maximum drain source voltage (VDSS) of 30V and has a powerful continuous drain current (ID) processing capability of 5A, suitable for various medium to high power applications. Its highlight lies in its low conduction resistance (RD (on) of 33m R, which significantly reduces power consumption and improves energy efficiency performance. This MOSFET is widely used in power management, battery protection, and other fields that require high-efficiency, small-sized semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[TP86R203NL(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/tp86r203nl-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:40:03</pubDate>
	<description><![CDATA[TP86R203NL is a high-quality N-channel MOSFET that adopts a compact SOP-8 packaging process, suitable for circuit design with limited space. Its key features include a maximum drain source voltage of 30V (VDSS), which can withstand continuous drain current (ID) of up to 15A, ensuring strong current processing capability. Of particular note, this MOSFET has an ultra-low on resistance (RD (on) of only 7.5m R, effectively reducing power loss and improving energy utilization. It is particularly suitable for demanding switching power supplies, load switches, and motor drive applications, demonstrating excellent energy efficiency and stability.]]></description>
</item>
<item>
	<title><![CDATA[SI4174DY-T1-GE3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4174dy-t1-ge3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:39:51</pubDate>
	<description><![CDATA[SI4174DY-T1-GE3 is a high-performance N-channel MOSFET designed with a miniaturized SOP-8 package, specifically designed for modern precision electronic devices. This device has a maximum drain source withstand voltage (VDSS) of 30V and can stably carry a continuous drain current (ID) of 15A at high efficiency, demonstrating excellent performance. Especially outstanding is its conduction resistance (RD (on)) as low as 7.5m R, which can significantly reduce energy loss and improve overall energy efficiency during operation. This MOSFET, with its excellent electrical performance and reliability, has become an ideal choice for many applications such as power management and motor drive.]]></description>
</item>
<item>
	<title><![CDATA[NTMS4816N(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntms4816n-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:39:39</pubDate>
	<description><![CDATA[This NTMS4816N MOSFET adopts advanced N-channel technology and is packaged in a compact SOP-8, suitable for various precision electronic devices. Its core parameters are powerful, with a drain source breakdown voltage of up to 30V (VDSS) and excellent 15A continuous drain current ID capability, ensuring efficient and stable power transmission. The conduction resistance is only 7.5m R, effectively reducing power consumption and improving system energy efficiency, making it an ideal choice for high power density applications.]]></description>
</item>
<item>
	<title><![CDATA[IRF8721PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf8721pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:39:26</pubDate>
	<description><![CDATA[The IRF8721PBF MOSFET model adopts a compact SOP-8 package, designed specifically for miniaturization in modern electronic devices. This N-channel MOSFET can operate stably at a maximum voltage of 30V, providing a continuous current carrying capacity of up to 15A. Its key technical parameter is an ultra-low conduction resistance of 7.5mR, which significantly improves energy efficiency and reduces power loss. It is suitable for various high-efficiency application scenarios such as power conversion, high current switch control, and motor drive, and is an ideal semiconductor component for building efficient and energy-saving systems.]]></description>
</item>
<item>
	<title><![CDATA[IRF8714PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf8714pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:39:14</pubDate>
	<description><![CDATA[The IRF8714PBF MOSFET model adopts a compact SOP-8 package and is designed specifically for high integration circuits. This N-channel MOSFET can provide reliable 15A continuous current output at a maximum operating voltage of 30V. Its outstanding advantage lies in its ultra-low conduction resistance of only 7.5mR, which effectively improves system efficiency and reduces energy consumption. It is widely used in various efficient and energy-saving scenarios such as power conversion, high current switch control, and motor drive, making it a wise choice for high-quality semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[IRF7821PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7821pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:39:02</pubDate>
	<description><![CDATA[The IRF7821PBF model MOS transistor adopts a compact SOP-8 package, designed specifically for the miniaturization requirements of modern electronic products. This is a high-performance N-channel MOSFET that can provide a stable 15A current carrying capacity at a maximum operating voltage of 30V. Its key feature lies in its ultra-low conduction resistance of 7.5mR, which greatly improves energy efficiency and reduces power consumption. It is widely used in power conversion, motor drive, high current switch control and other fields, and is the core semiconductor component for creating efficient and energy-saving systems.]]></description>
</item>
<item>
	<title><![CDATA[IRF7809AVPBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7809avpbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:38:50</pubDate>
	<description><![CDATA[The IRF7809AVPBF MOSFET model adopts an SOP-8 packaging design, which is compact and easy to integrate into compact electronic devices. This N-channel MOSFET can provide a stable 15A current output at a maximum operating voltage of 30V. Its core feature is that the conduction resistance is as low as 7.5mR, which helps to significantly improve system energy efficiency and reduce power loss. It is particularly suitable for power conversion, high current switch control, and motor drive, and is an ideal semiconductor device for achieving efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[FDS8880(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds8880-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:38:37</pubDate>
	<description><![CDATA[The FDS8880 N-channel MOSFET is designed for miniaturization in modern electronic devices using a compact SOP-8 package. This device can stably transmit a continuous current of up to 15A at a maximum operating voltage of 30V. Its core feature is an ultra-low 7.5mR conduction resistance, which significantly improves energy efficiency and reduces power loss, making it an ideal choice in fields such as power conversion, motor drive, and high current switch control, helping your design achieve both high performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[FDS6680A(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds6680a-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:38:25</pubDate>
	<description><![CDATA[The FDS6680A MOSFET model adopts a sophisticated SOP-8 packaging process, designed specifically for compact layouts in modern electronic devices. This N-channel MOSFET has excellent performance, providing a sustainable high current processing capacity of up to 15A at the highest operating voltage of 30V. Its highlight lies in its extremely low conduction resistance of 7.5mR, which effectively improves energy efficiency and reduces power loss. It is widely used in various high demand application scenarios such as power conversion, efficient motor drive, and high current switch controllers.]]></description>
</item>
<item>
	<title><![CDATA[FDS6670AS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds6670as-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:38:13</pubDate>
	<description><![CDATA[The FDS6670AS model MOS transistor adopts a miniaturized SOP-8 package and is designed specifically for compact circuits. As a high-performance N-channel MOSFET, it can operate stably at a maximum voltage of 30V, providing up to 15A of continuous current processing capability. Its unique advantage lies in its ultra-low on resistance of only 7.5mR, significantly improving system energy efficiency and reducing power consumption. Widely used in power conversion, high current switch control, motor drive and other fields, it is the preferred semiconductor device for pursuing efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[FDS6298(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds6298-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:38:00</pubDate>
	<description><![CDATA[The FDS6298 MOSFET model adopts a compact SOP-8 package, tailored for the miniaturization design of modern electronic devices. The N-channel device can provide a sustainable current carrying capacity of up to 15A at a maximum operating voltage of 30V. Its excellence lies in its ultra-low conduction resistance of only 7.5mR, which effectively reduces energy consumption and improves system efficiency. It is widely used in power management, fast switch control, motor drive and other scenarios, and is an ideal semiconductor component for achieving efficient and energy-saving goals.]]></description>
</item>
<item>
	<title><![CDATA[DMN3016LSS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn3016lss-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:37:48</pubDate>
	<description><![CDATA[The DMN3016LSS model MOSFET adopts a compact SOP-8 package, which is suitable for the space saving needs of modern electronic devices. This N-channel MOSFET operates stably at a maximum drain source voltage of 30V, providing a strong 15A continuous current carrying capacity. Its core technological highlight lies in the industry-leading 7.5mR ultra-low conduction resistance, which significantly improves power efficiency and reduces power consumption, especially suitable for efficient power conversion, high current switch control, motor drive and other application scenarios.]]></description>
</item>
<item>
	<title><![CDATA[ZXMN6A11DN8(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zxmn6a11dn8-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:37:35</pubDate>
	<description><![CDATA[The ZXMN6A11DN8 model MOS transistor adopts a compact SOP-8 package, which is particularly suitable for high integration circuit design. Equipped with efficient N+N channels, it can operate stably at the highest voltage of 60V and provide continuous current processing capacity of up to 6.5A. Its core technological highlight is the ultra-low 32mR conduction resistance, which effectively reduces system losses and enhances energy efficiency performance. It is an ideal component choice for power conversion, motor drive, and other high-efficiency power electronic applications.]]></description>
</item>
<item>
	<title><![CDATA[IRF7103PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7103pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:37:23</pubDate>
	<description><![CDATA[The MOS transistor of model IRF7103PBF is packaged with exquisite SOP-8, designed specifically for high-performance circuits. This device adopts leading N+N channel technology and can operate stably at a maximum drain source voltage of 60V, providing a powerful 6.5A continuous current. Its outstanding feature lies in its ultra-low on resistance of only 32mR, significantly improving energy efficiency and reducing power consumption. Widely used in power conversion, motor drive, high-frequency switching and other fields, it is an ideal choice for engineers to create high-performance and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[FDS9945(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds9945-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:37:11</pubDate>
	<description><![CDATA[The FDS9945 MOSFET is a high-performance semiconductor device using advanced SOP-8 packaging technology, with an N+N channel structure to ensure efficient and stable operation at a rated voltage of 60V. This device can withstand a maximum continuous current of 6.5A, especially its ultra-low on resistance of 32mR, greatly reducing power loss and improving overall work efficiency. This MOSFET is widely used in power converters, load switches, motor drives, and other fields, making it an ideal component for building energy-saving and efficient circuits.]]></description>
</item>
<item>
	<title><![CDATA[DMN6070SSD(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn6070ssd-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:36:58</pubDate>
	<description><![CDATA[The DMN6070SSD model MOSFET adopts a compact and efficient SOP-8 package, designed specifically for the miniaturization needs of modern electronic devices. This device is equipped with N+N channels, ensuring excellent electrical performance, stable operation at voltages up to 60V, and providing continuous operating currents of up to 6.5A. Its highlight lies in its ultra-low conduction resistance of only 32mR, which effectively reduces energy loss and improves energy conversion efficiency. It is particularly suitable for power management, high-speed switching circuits, and motor drives, making it an ideal choice for optimizing system performance.]]></description>
</item>
<item>
	<title><![CDATA[BSO615NG(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bso615ng-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:36:46</pubDate>
	<description><![CDATA[This MOS transistor model is BSO615NG, which adopts a miniaturized SOP-8 packaging form and is suitable for various precision electronic devices. Its built-in N+N channel design has excellent switching performance and stability, and can operate safely under the highest voltage withstand of 60V, while providing a continuous working current of up to 6.5A. Especially outstanding is that its conduction resistance is as low as 32mR, which helps significantly reduce power loss and improve overall system efficiency. It is widely used in power conversion, motor control, and other high-efficiency power electronics fields.]]></description>
</item>
<item>
	<title><![CDATA[STS4DNF60L(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sts4dnf60l-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:36:34</pubDate>
	<description><![CDATA[This MOS transistor model is STS4DNF60L, which adopts a compact SOP-8 package and is suitable for high-density circuit board design. Its internal structure is a high-performance N+N channel, which can operate stably at a rated voltage of 60V and provide a continuous output current of up to 6.5A. Of particular note, this device has an ultra-low on resistance of only 32m R, which can effectively reduce power consumption and improve system efficiency. It is an ideal choice for applications such as power management and motor drive.]]></description>
</item>
<item>
	<title><![CDATA[SQ9945BEY-T1_GE3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sq9945bey-t1_ge3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:36:22</pubDate>
	<description><![CDATA[The N+N channel MOSFET of model SQ9945BEY-T1_GE3 adopts a compact SOP-8 packaging design, suitable for high integration and high-performance electronic devices. This device has strong electrical performance, with a maximum operating voltage VDSS of up to 60V and a continuous current ID of up to 6.5A, meeting the requirements of high voltage and high current applications. Its outstanding conduction resistance RD (on) is only 32mR, effectively reducing power loss and improving overall energy efficiency. Widely used in power conversion, motor drive, inverter and other fields, it is an ideal choice for engineers to design efficient and energy-saving circuits.]]></description>
</item>
<item>
	<title><![CDATA[DMN6066SSD(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn6066ssd-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:36:09</pubDate>
	<description><![CDATA[The N+N channel MOSFET of model DMN6066SSD adopts SOP-8 packaging, designed for high power density and high-efficiency circuits. This device has strong performance, with a maximum operating voltage of 60V VDSS and a continuous current ID of up to 6.5A, suitable for high voltage and high current application environments. Its conduction resistance RD (on) is as low as 32mR, effectively reducing power loss and improving system efficiency. Widely used in power conversion, motor drive, battery management systems and other fields, it is an ideal MOSFET component for engineers to design high-performance and energy-saving electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRF7341PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7341pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:35:58</pubDate>
	<description><![CDATA[The N+N channel MOSFET of model IRF7341PBF adopts SOP-8 packaging, designed specifically for high-efficiency and high current applications. The maximum operating voltage VDSS of this device is as high as 60V, with a continuous current ID capability of 6.5A, capable of stable operation in high voltage and high current environments. The conduction resistance RD (on) is as low as 32mR, effectively reducing power loss and improving the overall energy efficiency of the system. Widely used in power conversion, motor drive, inverter and other fields, it is an ideal MOSFET choice for engineers pursuing high-performance and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[ZXMN6A25DN8TA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zxmn6a25dn8ta-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:35:45</pubDate>
	<description><![CDATA[The N+N channel MOSFET of ZXMN6A25DN8TA adopts SOP-8 packaging, designed specifically for high power density and high-efficiency circuits. This device has superior electrical performance, with a maximum operating voltage VDSS of up to 60V and a continuous current ID of up to 6.5A, suitable for high voltage and high current application scenarios. Its conduction resistance RD (on) is only 32mR, ensuring maximum reduction of power loss during high current transmission and improving overall system efficiency. Widely used in many fields such as power conversion, motor drive control, battery management systems, etc., it is the preferred MOSFET component for engineers to design high-performance and energy-saving electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[STN4828(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/stn4828-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:35:32</pubDate>
	<description><![CDATA[The N+N channel MOSFET of model STN4828 adopts standard SOP-8 packaging, designed specifically for high efficiency and high current applications. This device provides excellent electrical performance, with a maximum operating voltage of VDSS up to 60V and a continuous current ID capability of 6.5A, suitable for high voltage and high current working environments. Its conduction resistance RD (on) is only 32mR, ensuring reduced power consumption and improved system energy efficiency during high current operation. Widely used in power conversion, motor drive, battery management systems and other fields, it is an ideal MOSFET product for engineers to design high-performance, low loss circuits.]]></description>
</item>
<item>
	<title><![CDATA[SQ4946AEY-T1_GE3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sq4946aey-t1_ge3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:35:19</pubDate>
	<description><![CDATA[The N+N channel MOSFET of model SQ4946AEY-T1_GE3 is designed in a compact SOP-8 package specifically for modern highly integrated and low-power electronic devices. This device has excellent electrical performance, with a rated working voltage of up to 60V VDSS and a continuous current ID of up to 6.5A, making it suitable for high voltage and high current applications. The conduction resistance RD (on) is only 32mR, effectively reducing power loss and improving system efficiency. Widely used in power conversion, motor drive, battery management systems and other fields, it is an ideal component for engineers to create high-performance, energy-saving and environmentally friendly circuits.]]></description>
</item>
<item>
	<title><![CDATA[SI4946BEY-T1-E3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4946bey-t1-e3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:35:07</pubDate>
	<description><![CDATA[The N+N channel MOSFET with model SI4946BEY-T1-E3 adopts SOP-8 packaging technology, specifically designed for efficient and highly integrated electronic designs. This device has excellent working performance, with a maximum voltage VDSS of up to 60V and a continuous current ID support of 6.5A, suitable for high voltage and high current application scenarios. The conduction resistance RD (on) is as low as 32mR, significantly reducing power loss and improving system energy efficiency. Widely used in power management, motor drives, inverters and other fields, it is an ideal choice for engineers when designing high-performance and energy-saving circuits.]]></description>
</item>
<item>
	<title><![CDATA[DMNH6042SSDQ(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmnh6042ssdq-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:34:57</pubDate>
	<description><![CDATA[The N+N channel MOSFET of model DMNH6042SSDQ is designed with SOP-8 packaging for high-efficiency and high current applications. The device operates with a voltage VDSS of up to 60V and a continuous current ID of up to 6.5A, making it suitable for high voltage and high current environments. Its excellent conduction resistance RD (on) is only 32mR, which helps to minimize power consumption and improve the overall energy efficiency of the system. Widely used in various fields such as power conversion, motor drive, power electronics, etc., it is an ideal MOSFET component for engineers to design high-performance and energy-saving circuits.]]></description>
</item>
<item>
	<title><![CDATA[DMN6040SSD(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn6040ssd-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:34:42</pubDate>
	<description><![CDATA[The N+N channel MOSFET of model DMN6040SSD adopts SOP-8 packaging form, suitable for various high-power density circuit designs. This device has excellent electrical performance, with a maximum operating voltage of VDSS up to 60V and a continuous current ID capable of carrying 6.5A, meeting the requirements of high current applications. Especially outstanding is that its conduction resistance RD (on) is only 32mR, significantly reducing power loss and improving system efficiency. Widely used in fields such as power conversion, motor drive, battery management systems, etc., it is an ideal choice for engineers seeking high-efficiency and low-energy solutions.]]></description>
</item>
<item>
	<title><![CDATA[Si2324DS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2324ds-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:34:30</pubDate>
	<description><![CDATA[The N-channel MOSFET of model Si2324DS adopts a compact SOT-23 package, which is particularly suitable for circuit board designs with limited space. This device has excellent electrical performance, with a maximum operating voltage of VDSS up to 100V and a continuous current ID capable of handling 3A, suitable for medium to high voltage application environments. Although the conduction resistance RD (on) is 210mR, it can still maintain reasonable energy efficiency performance at the corresponding current level. Widely used in various circuits such as power conversion, load switching, and motor drive, it is an ideal MOSFET choice for engineers to design cost-effective electronic products.]]></description>
</item>
<item>
	<title><![CDATA[ZXMN10A07F(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zxmn10a07f-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:34:18</pubDate>
	<description><![CDATA[The N-channel MOSFET of model ZXMN10A07F adopts a compact SOT-23 package, designed specifically for miniaturization in modern electronic devices. This device has strong performance indicators, with a maximum operating voltage of VDSS up to 100V and a continuous current ID of 3A, suitable for medium to high voltage applications. The conduction resistance RD (on) is 210mR, although relatively high, it can still ensure lower power loss under moderate current. Widely used in power conversion, motor control, battery protection circuits, etc., it is an ideal MOSFET component for engineers to achieve simple integration and reliable performance.]]></description>
</item>
<item>
	<title><![CDATA[IRFR5505PBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr5505pbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:34:06</pubDate>
	<description><![CDATA[The P-channel MOSFET of model IRFR5505PBF adopts TO-252-2L packaging, which has efficient heat dissipation performance. The working voltage of the device is VDSS up to 60V, and the continuous current ID can carry 15A, meeting the requirements of high current applications. Its conduction resistance RD (on) is only 70mR, effectively reducing power loss and improving energy utilization efficiency. Widely used in power conversion, motor drive, battery management systems and other fields, it is an ideal choice for designing high-power and low loss circuits.]]></description>
</item>
<item>
	<title><![CDATA[AOSS62934(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aoss62934-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:33:53</pubDate>
	<description><![CDATA[The N-channel MOSFET of model AOSS62934 adopts a miniature SOT-23 package, suitable for compact electronic device design. This device has excellent electrical performance, with a maximum operating voltage of VDSS up to 100V and a continuous current carrying capacity of 5A, which can operate stably in high voltage environments. Its conduction resistance RD (on) is only 110mR, effectively reducing power loss and improving system efficiency. Widely used in power conversion, motor drive control, battery management systems and other fields, it is an ideal choice for engineers to build high-performance, low-energy circuits.]]></description>
</item>
<item>
	<title><![CDATA[Si2392ADS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2392ads-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:33:41</pubDate>
	<description><![CDATA[The N-channel MOSFET of model Si2392ADS-T1-GE3 adopts a space saving SOT-23 package, optimized for modern high-density electronic design. This device has excellent electrical performance, with a maximum operating voltage of VDSS up to 100V and a continuous current ID capable of carrying 5A, making it suitable for high voltage and high current applications. Its conduction resistance RD (on) is 110mR, which can maintain low power loss even during high current transmission. Widely used in power conversion, motor control, switching power supply and other fields, it is an ideal semiconductor component for engineers to design high-performance and low loss circuits.]]></description>
</item>
<item>
	<title><![CDATA[RZR040P01(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/rzr040p01-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:33:29</pubDate>
	<description><![CDATA[The P-channel MOSFET of model RZR040P01 adopts a compact SOT-23-3L package, specially designed for the miniaturization design needs of modern electronic devices. This device has strong performance indicators, with a maximum operating voltage VDSS of 20V and a continuous current ID of up to 7A, which can meet the needs of high current applications. Its characteristic lies in the conduction resistance RD (on) as low as 20mR, which effectively reduces power loss and improves overall energy efficiency. Widely used in scenarios such as power conversion, load switching, and motor drive, it is an ideal MOSFET choice for engineers to achieve efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[SSM3J358R(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ssm3j358r-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:33:16</pubDate>
	<description><![CDATA[The P-channel MOSFET of model SSM3J358R adopts a small SOT-23-3L package, suitable for various space limited electronic designs. The device has superior electrical performance, with a maximum operating voltage VDSS of 20V and a continuous current ID of up to 7A, making it particularly suitable for high current applications. Its conduction resistance RD (on) is only 20mR, effectively reducing power loss and improving system efficiency. Widely used in power management, load switching, and other fields that require precise current control, it is a highly efficient, low impedance semiconductor component preferred by engineers.]]></description>
</item>
<item>
	<title><![CDATA[SSM3J14T(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ssm3j14t-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:33:04</pubDate>
	<description><![CDATA[The P-channel MOSFET of model SSM3J14T adopts a small SOT-23-3L package, which is suitable for compact circuit design. This device has excellent electrical performance, with a maximum operating voltage of VDSS up to 30V, and can continuously handle 4.1A current, suitable for medium to large current application scenarios. Its characteristic is that the conduction resistance RD (on) is as low as 42mR, which helps to reduce power loss and improve energy efficiency. Widely used in power conversion, load switching, reverse current protection and other functional modules, it is an important component for engineers to build efficient and energy-saving electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[SSM3J334R(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ssm3j334r-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:32:52</pubDate>
	<description><![CDATA[The P-channel MOSFET of model SSM3J334R is designed for modern miniaturized electronic devices in a compact SOT-23-3L package. The device has excellent electrical performance, with a rated voltage of up to 30V VDSS and a continuous current ID capacity of up to 4.1A, meeting the needs of medium to high current applications. Its conduction resistance RD (on) is only 42mR, which helps to reduce power consumption and improve system energy efficiency. Widely used in power management, load switching, logic level conversion and other fields, it is an ideal choice for engineers when designing high-efficiency and low-energy circuits.]]></description>
</item>
<item>
	<title><![CDATA[IRF7105TRPBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7105trpbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:32:39</pubDate>
	<description><![CDATA[The N+P channel MOSFET of model IRF7105TRPBF adopts SOP-8 packaging, which has excellent stability and compatibility. This device has superior electrical performance, can operate stably under VDSS voltage of up to 30V, and can carry a continuous current of 6A, meeting the requirements of high current applications. Its highlight lies in its extremely low conduction resistance RD (on) - only 16mR, effectively reducing system energy consumption and improving energy utilization efficiency. Widely used in scenarios such as power conversion, motor drive, battery management systems, etc., it is an ideal MOSFET product for professional engineers to optimize design and achieve efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[ZXMN3B14F(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zxmn3b14f-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:32:27</pubDate>
	<description><![CDATA[The N-channel MOSFET of model ZXMN3B14F adopts a compact SOT-23-3L package, providing a convenient integration solution for compact electronic designs. The device performs excellently at a VDSS voltage of 30V and can safely withstand continuous currents up to 5.8A, adapting to various high current application environments. Its unique advantage lies in its conduction resistance RD (on) as low as 21mR, which greatly reduces power loss and improves energy utilization efficiency. Widely used in power conversion, motor control, battery management systems and other fields, it is the preferred MOSFET product for pursuing efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[AO3480(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3480-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:32:15</pubDate>
	<description><![CDATA[The N-channel MOSFET of model AO3480 adopts a compact SOT-23-3L package, which meets the miniaturization requirements of modern electronic products. This device has strong performance indicators, with a rated voltage VDSS of up to 30V and a continuous current ID carrying capacity of 5.8A, suitable for handling high current situations. It is worth mentioning that its conduction resistance RD (on) is as low as 21mR, effectively reducing power loss and improving the system‘s energy efficiency ratio. Widely used in various scenarios such as power management, switch circuits, and motor drives, it is an ideal choice for engineers to carry out high-performance and low-power designs.]]></description>
</item>
<item>
	<title><![CDATA[ZXMN10A25KTC(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zxmn10a25ktc-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:32:02</pubDate>
	<description><![CDATA[The N-channel MOSFET of ZXMN10A25KTC is packaged in TO-252-2L, known for its robustness and heat dissipation performance. This device has excellent electrical parameters, with a maximum operating voltage VDSS of up to 100V and a continuous output current ID of up to 15A, allowing it to calmly handle high voltage and high current application scenarios. In addition, the conduction resistance RD (on) is as low as 100mR, effectively reducing power loss and improving system efficiency.]]></description>
</item>
<item>
	<title><![CDATA[DMN10H170SK3(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn10h170sk3-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:31:50</pubDate>
	<description><![CDATA[The N-channel MOSFET with model DMN10H170SK3 is designed for high-power applications in a sturdy and durable TO-252-2L package. This device has excellent electrical characteristics, with a maximum withstand voltage of up to 100V VDSS and a strong continuous current ID of up to 15A, fully meeting the requirements of high current scenarios. The conduction resistance RD (on) is controlled at 100mR, effectively reducing power loss and improving energy conversion efficiency. Suitable for power conversion, motor drive, battery management systems and other fields, it is an ideal choice for high-power and high-efficiency electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[FDS9926A(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds9926a-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:31:38</pubDate>
	<description><![CDATA[The MOS transistor with model FDS9926A adopts compact and efficient SOP-8 packaging technology, tailored for modern precision electronic design. As a high-quality N+N channel MOSFET, it has excellent electrical performance indicators, including a maximum voltage VDSS of 20V and a continuous current ID of up to 6A, ensuring stable working performance under high load conditions. Meanwhile, its excellent conduction resistance RD (on) is only 21m R, which helps to reduce energy loss and improve energy efficiency. This MOSFET is widely used in power management, switch regulation, and various high demand electronic circuits, making it an ideal choice for engineers pursuing performance and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[ZXMN2A04DN8(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/zxmn2a04dn8-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:31:25</pubDate>
	<description><![CDATA[The MOS transistor with the model ZXMN2A04DN8 adopts a miniaturized SOP-8 packaging process, which is particularly suitable for compact circuit designs. This excellent N+N channel MOSFET has powerful electrical parameters, with a working voltage VDSS of up to 20V and a maximum continuous current ID support of 6A, demonstrating strong current processing capabilities. More noteworthy is that its excellent conduction resistance RD (on) is only 21m R, greatly reducing power loss and improving system efficiency. This product is widely used in various fields such as power management and switch circuits, and is a high-quality choice for creating efficient and energy-saving electronic products.]]></description>
</item>
<item>
	<title><![CDATA[PHKD6N02LT(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/phkd6n02lt-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:31:13</pubDate>
	<description><![CDATA[The MOS transistor of model PHKD6N02LT is packaged in a compact SOP-8, which is particularly suitable for design requirements with limited space. As a high-performance N+N channel MOSFET, its core parameters are outstanding, with a rated voltage VDSS of up to 20V and a maximum continuous current ID of 6A, demonstrating strong driving capability. Especially outstanding is its ultra-low conduction resistance RD (on), which is only 21m R, significantly reducing power loss and improving overall efficiency. This MOSFET is widely used in various high-end electronic circuits such as power conversion and motor control, making it an ideal choice for engineers to achieve efficient solutions.]]></description>
</item>
<item>
	<title><![CDATA[SM9926PRL(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm9926prl-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:31:01</pubDate>
	<description><![CDATA[The high-quality MOS transistor with model SM9926PRL adopts advanced SOP-8 packaging design, which is exquisite and easy to integrate. This N+N channel MOSFET has excellent electrical performance, with a rated voltage VDSS of up to 20V and a continuous current ID of up to 6A, ensuring efficient and stable operation of the equipment. Its conduction resistance is only 21m R, effectively reducing power consumption and improving system efficiency. It is suitable for various high demand circuit designs and power management applications, making it an ideal choice for building high-performance electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[IRF7311PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7311pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:30:49</pubDate>
	<description><![CDATA[IRF7311PBF is an N+N channel MOSFET designed in a miniaturized SOP-8 package, particularly suitable for compact electronic systems. This device can operate under a maximum drain source voltage (VDSS) of 20V, providing a continuous current of 6A, and has a conduction resistance of 21mR (RD (on)), providing efficient current transmission performance while ensuring low power consumption. It is suitable for power conversion, load switching, and various medium current applications.]]></description>
</item>
<item>
	<title><![CDATA[DMG9926USD(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg9926usd-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:30:36</pubDate>
	<description><![CDATA[DMG9926USD is a high-performance N+N channel MOSFET packaged in a space saving SOP-8 package, suitable for various precision electronic devices. This device can operate at a maximum drain source voltage (VDSS) of 20V, providing a continuous current carrying capacity of 6A and demonstrating good current handling performance. Its uniqueness lies in its 21mR conduction resistance (RD (on)), which ensures efficient operation at lower power consumption and is particularly suitable for power management, signal switching, and other medium current applications.]]></description>
</item>
<item>
	<title><![CDATA[TPC8040-H(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/tpc8040-h-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:30:24</pubDate>
	<description><![CDATA[TPC8040-H is a high-performance N-channel MOSFET, packaged in a space saving SOP-8 package, suitable for various high-performance electronic designs. This device operates stably at a maximum drain source voltage (VDSS) of 30V and can withstand continuous currents of up to 18A, demonstrating strong driving capabilities. Its core highlight is that the conduction resistance RD (on) is only 5.5mR, significantly improving system energy efficiency and reducing power consumption. It is an ideal choice for power conversion, motor control, and other high current applications.]]></description>
</item>
<item>
	<title><![CDATA[DMN3009SSS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn3009sss-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:30:11</pubDate>
	<description><![CDATA[DMN3009SSS is an N-channel MOSFET designed with a sophisticated SOP-8 packaging, specifically for compact layouts in modern electronic devices. The device operates at a maximum drain source voltage of 30V, providing a stable 18A current carrying capacity and demonstrating excellent power processing performance. Its key advantage lies in its ultra-low conduction resistance of 5.5mR, which greatly improves power conversion efficiency and energy-saving effects. It is an ideal semiconductor component for power management, motor drive, and various high current, low impedance applications.]]></description>
</item>
<item>
	<title><![CDATA[SI4420DYPBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4420dypbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:29:59</pubDate>
	<description><![CDATA[SI4420DYPBF is a high-performance N-channel MOSFET designed for high power density using an economical SOP-8 package. This device has a maximum drain source voltage (VDSS) of 30V and can continuously handle large currents of 18A, demonstrating strong power control capabilities. Its outstanding feature lies in its ultra-low conduction resistance (RD (on) of only 5.5mR, which greatly improves system efficiency and reduces energy consumption. It is an ideal choice for high demand applications such as power conversion, motor drive, and battery management systems.]]></description>
</item>
<item>
	<title><![CDATA[SI4168DY-T1-GE3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4168dy-t1-ge3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:29:47</pubDate>
	<description><![CDATA[SI4168DY-T1-GE3 is a high-performance N-channel MOSFET designed specifically for high-density electronics in a compact SOP-8 package. This device supports a maximum drain source voltage of 30V (VDSS) and can handle continuous currents up to 18A, demonstrating excellent current carrying capacity. Its unique highlight is its conductivity resistance (RD (on) as low as 5.5mR, which helps improve energy efficiency and reduce power consumption in the system. It is widely used in power conversion, motor drive, and other fields that require high-efficiency and low impedance semiconductor components.]]></description>
</item>
<item>
	<title><![CDATA[IRF8113PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf8113pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:29:34</pubDate>
	<description><![CDATA[IRF8113PBF is an N-channel MOSFET that uses a space saving SOP-8 package, particularly suitable for the integration needs of modern electronic products. This device can operate stably at a maximum drain source voltage of 30V, providing a continuous current carrying capacity of up to 18A and demonstrating strong power control performance. In addition, its excellent conduction resistance is only 5.5mR, significantly improving system energy efficiency and reducing power consumption, making it a reliable choice for high current applications such as power conversion and motor drive.]]></description>
</item>
<item>
	<title><![CDATA[IRF7458PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7458pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:29:22</pubDate>
	<description><![CDATA[IRF7458PBF is an efficient N-channel MOSFET, packaged in a compact SOP-8 package, particularly suitable for space limited design solutions. This device has a maximum drain source voltage (VDSS) of 30V and can withstand continuous currents of up to 18A, demonstrating strong driving capabilities. Its excellence lies in its ultra-low on resistance (RD) of only 5.5mR, which effectively reduces power consumption and greatly improves system efficiency. It is an ideal semiconductor device suitable for high demand applications such as power conversion and motor drive.]]></description>
</item>
<item>
	<title><![CDATA[FDS8896(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds8896-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:29:10</pubDate>
	<description><![CDATA[FDS8896 is a high-performance N-channel MOSFET designed with a sophisticated SOP-8 packaging for the miniaturization needs of modern electronic products. This device, with a maximum drain source voltage of 30V (VDSS), can stably carry a continuous current of up to 18A, demonstrating excellent power processing capabilities. Its key highlight lies in its ultra-low conduction resistance (RD (on) of only 5.5mR, which helps to significantly reduce system losses and improve performance. It is suitable for power conversion, motor drive, and various high-power and high-efficiency electronic applications.]]></description>
</item>
<item>
	<title><![CDATA[FDS8690(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds8690-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:28:58</pubDate>
	<description><![CDATA[The FDS8690 N-channel MOSFET adopts a compact SOP-8 packaging design, suitable for circuit projects with high space utilization requirements. This device has superior electrical performance, with a maximum operating voltage of 30V VDSS and a continuous output current of up to 18A, ensuring stable and reliable power transmission. Of particular concern is its conduction resistance as low as 5.5mR, which effectively improves overall system efficiency and reduces power consumption, making it a high-quality choice for high current applications such as power conversion and motor drive.]]></description>
</item>
<item>
	<title><![CDATA[FDS6676AS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds6676as-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:28:45</pubDate>
	<description><![CDATA[FDS6676AS is a high-performance N-channel MOSFET that uses a space saving SOP-8 package and is compatible with various precision electronic devices. Its core features include a maximum leakage source voltage of 30V (VDSS), which can withstand continuous DC currents of up to 18A, demonstrating strong driving capabilities. It is worth mentioning that the conduction resistance of this device is extremely low, only 5.5mR, which will significantly improve system efficiency, reduce power consumption, and be widely used in power conversion, motor drive, battery management systems and other fields. It is an ideal choice for high energy efficiency solutions.]]></description>
</item>
<item>
	<title><![CDATA[SI4386DY-T1-E3(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4386dy-t1-e3-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:28:32</pubDate>
	<description><![CDATA[SI4386DY-T1-E3 is an efficient N-channel MOSFET designed for optimizing circuit layout using a space saving SOP-8 package. This device can operate stably at a maximum steady-state voltage of 30V, with a peak current of up to 18A, demonstrating excellent current processing capabilities. Meanwhile, its excellent conduction resistance is only 5.5mR, significantly improving power conversion efficiency, reducing energy loss, and suitable for various high-end power management, motor drives, and other high current, low impedance application scenarios.]]></description>
</item>
<item>
	<title><![CDATA[IRF7805ZPBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7805zpbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:28:20</pubDate>
	<description><![CDATA[The IRF7805ZPBF MOSFET is a high-performance N-channel device that uses a miniaturized SOP-8 package to meet the compact requirements of modern electronic products. Its core advantage lies in having a breakdown voltage of up to 30V VDSS, which can withstand a continuous high current of 18A, fully meeting the needs of high-power applications. Especially outstanding is that the conduction resistance RD (on) of the device is only 5.5mR, which helps to achieve lower power consumption and higher energy efficiency ratio, making it an ideal component choice for power conversion, motor drive, and other high demand electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[IRF7455PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7455pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:28:08</pubDate>
	<description><![CDATA[The IRF7455PBF MOSFET adopts advanced N-channel technology and compact SOP-8 packaging, designed specifically for efficient power conversion and motor drive. This device has powerful electrical parameters, with a rated voltage VDSS of 30V and a continuous current ID of up to 18A, demonstrating excellent load carrying capacity. Of particular note, its ultra-low on resistance is only 5.5mR, greatly improving system efficiency and reducing energy consumption, making it an ideal component choice for high-power applications.]]></description>
</item>
<item>
	<title><![CDATA[FDS8817NZ(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds8817nz-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:27:55</pubDate>
	<description><![CDATA[FDS8817NZ is a high-quality N-channel MOSFET packaged in a compact SOP-8 form, particularly suitable for circuit board designs with limited space. This device has excellent electrical performance, supporting a maximum operating voltage of 30V and a continuous current processing capacity of up to 18A, ensuring strong and stable power transmission. Its ultra-low conduction resistance is only 5.5mR, greatly improving energy efficiency and reducing heat loss, making it an ideal choice for high demand applications such as power management and motor drive.]]></description>
</item>
<item>
	<title><![CDATA[FDS6682(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds6682-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:27:43</pubDate>
	<description><![CDATA[This MOS transistor model is FDS6682, which adopts a compact SOP-8 packaging design and is suitable for various high-efficiency electronic devices. As a high-performance N-channel device, it can operate stably under a maximum withstand voltage of 30V and provide a continuous current of up to 18A. Its excellent conduction resistance is only 5.5m R, effectively reducing power consumption and improving efficiency, making it an ideal choice for your high-power applications and circuit switch control.]]></description>
</item>
<item>
	<title><![CDATA[FDS6670A(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds6670a-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:27:31</pubDate>
	<description><![CDATA[FDS6670A is a high-performance N-channel MOSFET designed in SOP-8 packaging for high efficiency and high current applications. This device has a maximum drain source voltage of 30V, VDSS, and can carry continuous drain current IDs of up to 18A, ensuring stable performance in high-power systems. Its uniqueness lies in its ultra-low conduction resistance RD (on) of only 5.5m R, effectively reducing power loss and improving overall energy efficiency. FDS6670A MOSFETs are suitable for power conversion, motor drive, and other high current applications, bringing higher levels of reliability and efficiency to your design with excellent electrical performance.]]></description>
</item>
<item>
	<title><![CDATA[DMN3007LSS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn3007lss-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:27:18</pubDate>
	<description><![CDATA[DMN3007LSS is a high-performance N-channel MOSFET designed for high efficiency and high current applications using SOP-8 packaging. The device provides a maximum drain source voltage of 30V, VDSS, and can withstand continuous drain current ID of up to 18A, ensuring stable operation under high power conditions. Its outstanding advantage lies in its ultra-low conduction resistance RD (on) of only 5.5m R, which minimizes power loss and improves system efficiency. DMN3007LSS MOSFETs are widely used in power conversion, motor drive, load switching and other fields, meeting stringent engineering design requirements with excellent electrical performance.]]></description>
</item>
<item>
	<title><![CDATA[AO3493(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3493-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:27:06</pubDate>
	<description><![CDATA[AO3493 is a P-channel MOSFET designed for low voltage, low-power applications in a compact SOT-23 package. This device has a maximum drain source voltage of 20V (VDSS) and can continuously provide a drain current ID of 3A, ensuring stable operation in low-voltage systems. Its conduction resistance RD (on) is 60m R, effectively reducing power loss and improving energy utilization efficiency. AO3493 MOSFETs are widely used in scenarios such as battery management, power switches, and load drives. With their excellent electrical performance and compact packaging, they have become an ideal choice for modern portable and embedded electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[ST2305(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/st2305-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:26:54</pubDate>
	<description><![CDATA[ST2305 is a P-channel MOSFET that uses a compact SOT-23 package, making it particularly suitable for low voltage and low-power applications. The device provides a maximum drain source voltage of 20V (VDSS) and supports continuous drain current IDs of up to 3A, ensuring stable and reliable operation in low-voltage systems. Its conduction resistance RD (on) is as low as 60m R, which helps to reduce power loss and improve the system‘s energy efficiency ratio. The ST2305 MOSFET is an ideal choice for battery powered equipment, power switch control, load driving, and other fields, serving various electronic design projects with excellent performance and miniaturization packaging.]]></description>
</item>
<item>
	<title><![CDATA[KMA3D7P20SA(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/kma3d7p20sa-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:26:42</pubDate>
	<description><![CDATA[KMA3D7P20SA is a P-channel MOSFET packaged in SOT-23, designed specifically for compact and low-voltage applications. This device provides a maximum drain source voltage of 20V, VDSS, and has the capability of 3A continuous drain current ID, ensuring stable operation in low voltage environments. Its conduction resistance RD (on) is 60m R, which helps to reduce energy consumption and improve system efficiency. KMA3D7P20SA MOSFETs are widely used in battery management, power switching, load driving and other applications, meeting the design requirements of modern portable and embedded electronic devices with their high efficiency and small size advantages.]]></description>
</item>
<item>
	<title><![CDATA[DMP2170U(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp2170u-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:26:29</pubDate>
	<description><![CDATA[DMP2170U is a P-channel MOSFET that uses a space saving SOT-23 package and is suitable for various low-voltage, low-power electronic devices. This device has a maximum drain source voltage of 20V (VDSS) and supports a continuous drain current ID of 3A, ensuring long-lasting and stable operation in low-voltage systems. Its conducting resistance RD (on) of 60m R helps to reduce power loss and improve energy efficiency. DMP2170U MOSFETs are commonly used in battery powered systems, power switches, load drivers and other functional modules, serving the portable and embedded design markets with their compact size and excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[SM2301SRL(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm2301srl-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:26:17</pubDate>
	<description><![CDATA[SM2301SRL is a P-channel MOSFET packaged in SOT-23, designed specifically for compact electronic devices and low-voltage applications. The device provides a maximum drain source voltage of 20V, VDSS, and has a continuous drain current ID capability of 3A, ensuring stable operation in low voltage environments. Its conduction resistance RD (on) is 60m R, which helps to reduce energy loss and enhance system efficiency. The SM2301SRL MOSFET is suitable for applications such as battery powered devices, power management, and load switching, meeting various portable and embedded design requirements with excellent performance and compact size.]]></description>
</item>
<item>
	<title><![CDATA[PMV65XP(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/pmv65xp-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:26:05</pubDate>
	<description><![CDATA[PMV65XP is a P-channel MOSFET that uses a compact SOT-23 package, suitable for circuit designs with limited space and precise current control. This device provides a maximum drain source voltage of 20V VDSS and supports a continuous drain current ID of 3A, ensuring stable operation in low-voltage systems. Its unique advantage is that the conduction resistance RD (on) is as low as 60m R, effectively reducing power loss and improving energy efficiency. The PMV65XP MOSFET is an ideal choice for applications such as battery powered devices, power switches, and load drivers, meeting your low-voltage, low-power semiconductor needs with its outstanding performance.]]></description>
</item>
<item>
	<title><![CDATA[DMP2160U(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp2160u-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:25:52</pubDate>
	<description><![CDATA[DMP2160U is a P-channel MOSFET using SOT-23 small package, suitable for power management and switching applications in space limited and portable electronic devices. This device provides a maximum drain source voltage of 20V VDSS and can handle 3A continuous drain current ID, ensuring stable operation in low voltage environments. Its conduction resistance RD (on) is 60m R, which helps to reduce power consumption and improve system efficiency in low-power applications. DMP2160U MOSFET, with its compact size and reliable performance, has become an ideal semiconductor component in fields such as mobile devices and battery management systems.]]></description>
</item>
<item>
	<title><![CDATA[NTD4860N(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntd4860n-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:25:40</pubDate>
	<description><![CDATA[NTD4860N is a high-performance N-channel MOSFET designed in a TO-252-2L package for high-power, high current applications. This device provides a maximum drain source voltage of 30V VDSS and can withstand continuous drain current ID of up to 80A, ensuring stable performance even under harsh operating conditions. Its characteristic lies in its ultra-low conduction resistance RD (on), which is only 5.5m R, significantly reducing system losses and improving overall efficiency. Very suitable for applications in power conversion, motor drive, and other fields, meeting the needs of customers for high-efficiency, high current semiconductor components with excellent electrical performance.]]></description>
</item>
<item>
	<title><![CDATA[FDD6670A(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdd6670a-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:25:28</pubDate>
	<description><![CDATA[FDD6670A is an N-channel MOSFET, packaged in TO-252-2L, suitable for various high current and high efficiency applications. This device has a drain source voltage of 30V VDSS and can withstand continuous drain current ID of up to 80A, ensuring stable operation in high-power systems. Its unique advantage lies in its extremely low conduction resistance RD (on) of only 5.5m R, effectively reducing power loss and improving system efficiency. It is an ideal choice for high-power scenarios such as power conversion and motor drive, empowering the efficient design of modern electronic devices with excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[PHD97NQ03LT(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/phd97nq03lt-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:25:15</pubDate>
	<description><![CDATA[PHD97NQ03LT is a high-performance N-channel MOSFET designed in a TO-252-2L package for high-performance, high current applications. The device supports a maximum drain source voltage of 30V VDSS and has a continuous drain current ID capability of up to 80A, ensuring stable operation under heavy load conditions. Its highlight lies in the low conduction resistance RD (on) of 5.5m R, which greatly reduces power loss and improves overall energy efficiency. Suitable for high-power applications such as power conversion and motor drive, providing strong support for various electronic devices with excellent electrical performance.]]></description>
</item>
<item>
	<title><![CDATA[NTD4858N(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntd4858n-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:25:03</pubDate>
	<description><![CDATA[NTD4858N is a high-performance N-channel MOSFET, packaged in standard TO-252-2L, suitable for a wide range of power management and power conversion applications. It has a maximum drain source voltage of 30V VDSS and can withstand continuous drain current ID of up to 80A, ensuring stable operation under high power conditions. In addition, the core advantage of this device lies in its ultra-low conduction resistance RD (on) of only 5.5m R, effectively reducing system power consumption and improving overall efficiency. The NTD4858N MOSFET is an ideal choice for motor drives, switching power supplies, and other high current scenarios, helping to achieve efficient and stable circuit design with its excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[FDD8896(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdd8896-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:24:51</pubDate>
	<description><![CDATA[FDD8896 is a high-performance N-channel MOSFET that adopts the classic TO-252-2L packaging form, with a compact structure and easy installation. This device has a maximum drain source voltage of 30V (VDSS) and a continuous drain current ID of up to 80A, demonstrating its excellent carrying capacity in high current environments. Its notable feature is that it has an extremely low conduction resistance RD (on) of only 5.5m R, ensuring reduced losses and improved overall energy efficiency during high current switching. The FDD8896 MOSFET is suitable for high-power applications such as power conversion and motor drive, meeting the design requirements of various electronic products with excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[IRFR3709ZPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr3709zpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:24:38</pubDate>
	<description><![CDATA[IRFR3709ZPBF is a high-performance N-channel MOSFET packaged in TO-252-2L, designed specifically for high-performance, high current applications. This device has a maximum drain source voltage of 30V, VDSS, and can withstand continuous drain current ID of up to 80A, ensuring stable operation in high voltage and high current environments. Its outstanding advantage lies in the fact that the conduction resistance RD (on) is only 5.5m R, effectively reducing power loss and improving energy utilization efficiency. The IRFR3709ZPBF MOSFET is widely used in high-power applications such as power conversion and motor drive, and has become an ideal choice for many electronic designs due to its excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[Si2333DS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2333ds-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:24:26</pubDate>
	<description><![CDATA[Si2333DS is a P-channel MOSFET designed for compact electronic devices using a small SOT-23 package. Its core performance includes a maximum working voltage VDSS of 20V, providing a sustainable drain current of 5A; The low conduction resistance RD (on) of 30m R ensures low power consumption and high performance in working conditions. Widely used in power conversion, load switching, battery management systems, and other fields, it is an ideal MOSFET component for achieving high integration and energy-saving goals.]]></description>
</item>
<item>
	<title><![CDATA[Si2329DS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2329ds-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:24:14</pubDate>
	<description><![CDATA[Si2329DS-T1-GE3 is a P-channel MOSFET packaged in an economical and efficient SOT-23 package, suitable for various compact circuit designs. The highlight of this device lies in its maximum operating voltage VDSS of 20V, which can stably output a drain current of 5A; And it has a low conduction resistance RD (on) of 30m R, ensuring lower power loss and higher system efficiency. Widely used in power conversion, load switching, battery protection and other related fields, it is your ideal MOSFET device choice when designing high integration and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[DMP1045U(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp1045u-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:24:01</pubDate>
	<description><![CDATA[DMP1045U is a P-channel MOSFET that uses a miniaturized SOT-23 package, suitable for modern electronic designs with limited space. The device has excellent parameters and a maximum operating voltage of 20V VDSS, which can stably handle 5A drain current; A low conduction resistance RD (on) of 30m R helps to reduce power loss and improve system energy efficiency. Widely used in power conversion, load switch control, battery protection and other fields, it is the ideal MOSFET choice for designing compact and energy-efficient electronic products.]]></description>
</item>
<item>
	<title><![CDATA[Si2305CDS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2305cds-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:23:49</pubDate>
	<description><![CDATA[Si2305CDS-T1-GE3 is a P-channel MOSFET, designed in a lightweight SOT-23 package to provide efficient solutions for miniaturized electronic devices. The device has the following key characteristics: the maximum operating voltage VDSS is 20V, ensuring stable operation in high voltage environments; Capable of 5A drain current to meet various current requirements; The conduction resistance RD (on) is as low as 30m R, which helps to reduce power consumption and improve overall efficiency. Widely used in scenarios such as power conversion, load switch control, and battery protection, it is your ideal high integration and energy-saving MOSFET component.]]></description>
</item>
<item>
	<title><![CDATA[Si2323DS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2323ds-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:23:37</pubDate>
	<description><![CDATA[Si2323DS-T1-GE3 is a high-performance P-channel MOSFET designed for modern micro electronic devices in a compact SOT-23 package. The main parameters include a maximum working voltage VDSS of 20V, which can stably transmit a drain current of 5A; The conduction resistance RD (on) is only 30m R, effectively reducing energy consumption and improving system efficiency. Widely used in power management, load switching, battery protection and other fields, it is the ideal MOSFET choice for your pursuit of high integration and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[Si2323DS-T1-E3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2323ds-t1-e3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:23:25</pubDate>
	<description><![CDATA[Si2323DS-T1-E3 is a P-channel MOSFET packaged in a miniaturized SOT-23 package, providing a high integration solution specifically for compact electronic designs. This device has significant characteristics with a maximum operating voltage of 20V VDSS, and can safely carry a continuous drain current of 5A; Its conduction resistance RD (on), as low as 30m R, aims to minimize power consumption and improve system energy efficiency. Suitable for a wide range of application scenarios such as power conversion, load switching, battery protection, etc., it is your ideal MOSFET device choice for energy conservation and high performance.]]></description>
</item>
<item>
	<title><![CDATA[Si2323DDS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2323dds-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:23:10</pubDate>
	<description><![CDATA[Si2323DDS-T1-GE3 is a P-channel MOSFET designed with industry standard SOT-23 packaging, providing excellent performance for compact electronic designs. This device has distinct characteristics and a maximum operating voltage of 20V VDSS, which can stably handle a drain current of 5A; Moreover, its low conduction resistance RD (on) design of 30m R greatly reduces power loss and improves the overall energy efficiency of the system. Widely used in power management, load switch control, battery protection and other circuit designs, it is the ideal MOSFET component choice for you seeking high-performance and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[Si2323CDS-T1-GE3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2323cds-t1-ge3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:22:58</pubDate>
	<description><![CDATA[Si2323CDS-T1-GE3 is a P-channel MOSFET designed in a compact SOT-23 package, particularly suitable for modern micro electronic devices. The device has excellent specifications and a maximum operating voltage VDSS of 20V, capable of carrying a continuous drain current of 5A, ensuring stable operation; Its conduction resistance RD (on) is as low as 30m R, aiming to minimize energy consumption and improve system efficiency. Widely used in power conversion, load switch control, battery protection, etc., it is an ideal MOSFET solution for achieving high integration and energy-saving goals.]]></description>
</item>
<item>
	<title><![CDATA[PMV32UP(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/pmv32up-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:22:46</pubDate>
	<description><![CDATA[The PMV32UP P-channel MOSFET adopts a small SOT-23 packaging form, providing convenience for circuit design in limited space. Its key performance parameters include a maximum operating voltage VDSS of 20V, which can stably handle 5A drain current; The conduction resistance RD (on) is as low as 30m R, effectively reducing power loss and improving system efficiency. Widely used in various scenarios such as power conversion, load switching, battery protection, etc., it is the ideal MOSFET choice for building efficient and energy-saving electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[PMV30XPEA(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/pmv30xpea-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:22:33</pubDate>
	<description><![CDATA[The PMV30XPEA P-channel MOSFET adopts the industry standard SOT-23 packaging, providing an ideal solution for miniaturized electronic devices. Its core technical parameters include a maximum working voltage of VDSS up to 20V, which can stably carry a continuous drain current of 5A; The conduction resistance RD (on) is only 30m R, which helps to reduce the internal resistance of the system and improve the energy efficiency ratio. Widely used in power management, load switch control, battery protection circuits, etc., it is the preferred MOSFET component for your pursuit of high performance and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[NTR3A30PZ(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntr3a30pz-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:22:21</pubDate>
	<description><![CDATA[The NTR3A30PZ P-channel MOSFET adopts a compact SOT-23 package, which is particularly suitable for circuit design requirements in compact spaces. The key parameters of the device are as follows: the maximum operating voltage VDSS is 20V, which can provide a continuous drain current of 5A, ensuring stable and efficient current conduction; A low conduction resistance RD (on) of 30m R effectively reduces internal power consumption of the system and improves overall energy efficiency. Widely used in power management, load switch control, battery protection and other fields, it is your high-quality MOSFET choice for designing highly integrated and energy-saving electronic products.]]></description>
</item>
<item>
	<title><![CDATA[DMP2066LSN(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp2066lsn-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:22:09</pubDate>
	<description><![CDATA[DMP2066LSN P-channel MOSFET adopts a miniaturized SOT-23 packaging design, suitable for modern electronic applications with limited space. The device has excellent characteristics. The rated working voltage VDSS is 20V and can withstand a continuous drain current of 5A, ensuring stable operation in low voltage environments; A low conduction resistance RD (on) of 30m R helps to reduce power loss and improve system efficiency. Suitable for power conversion, load switch control, battery protection and other scenarios, it is an ideal MOSFET solution for achieving high integration and energy-saving design.]]></description>
</item>
<item>
	<title><![CDATA[DMP2045U(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp2045u-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:21:57</pubDate>
	<description><![CDATA[The DMP2045U P-channel MOSFET adopts a compact SOT-23 package, tailored for modern micro electronic devices. This device has a maximum operating voltage of 20V, VDSS, and can continuously provide a drain current of 5A, demonstrating stable and efficient current processing capabilities. Its highlight lies in the low conduction resistance RD (on) of 30m R, which helps to reduce system energy consumption and improve overall energy efficiency. Widely used in power management, load switching, battery protection and other fields, it is your preferred MOSFET device for designing high-quality and energy-saving electronic products.]]></description>
</item>
<item>
	<title><![CDATA[NTMFS4821N(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntmfs4821n-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:21:44</pubDate>
	<description><![CDATA[NTMFS4821N is a high-performance N-channel MOSFET designed with a compact DFN5X6-8L package specifically for the miniaturization needs of modern electronic devices. This device has strong electrical performance, with a rated voltage of up to 30V VDSS, and can withstand 70A continuous drain current ID, ensuring stable operation under high load conditions. Especially outstanding is its extremely low conduction resistance RD (on), which is only 5.7m R, which will effectively reduce power loss and improve overall energy efficiency. NTMFS4821N is suitable for power conversion, motor drive, and other high-power applications, meeting diverse design requirements with excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[FDMS7682(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdms7682-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:21:32</pubDate>
	<description><![CDATA[FDMS7682 is a high-performance N-channel MOSFET designed with a compact DFN5X6-8L package, specifically for modern high-performance electronic devices. This device has excellent electrical performance, with a maximum drain source voltage VDSS of 30V, and can achieve a continuous drain current ID of up to 70A, ensuring stable operation in high current application scenarios. It is particularly worth emphasizing that its excellent conduction resistance RD (on) is only 5.7m R, greatly reducing system energy consumption and improving work efficiency. FDMS7682 is suitable for high-power fields such as power management and motor drive, and its outstanding performance meets the needs of users for efficient and energy-saving semiconductor components.]]></description>
</item>
<item>
	<title><![CDATA[SIR850DP-T1-GE3(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sir850dp-t1-ge3-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:21:20</pubDate>
	<description><![CDATA[SIR850DP-T1-GE3 is a high-performance N-channel MOSFET designed for the miniaturization and high efficiency requirements of modern electronic devices, using a sophisticated DFN5X6-8L package. This device provides a powerful electrical parameter of 30V maximum drain source voltage VDSS, as well as a continuous drain current ID of up to 70A, ensuring stable operation under high power conditions. Its uniqueness lies in the fact that the conduction resistance RD (on) is as low as 5.7m R, effectively reducing power loss and improving overall system efficiency. SIR850DP-T1-GE3 is suitable for high current applications such as power conversion and motor drive, serving various high-end electronic designs with excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[SI7386DP-T1-E3(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7386dp-t1-e3-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:21:08</pubDate>
	<description><![CDATA[SI7386DP-T1-E3 is a high-performance N-channel MOSFET designed for high power density and space limited applications using advanced DFN5X6-8L packaging. Its key features include a maximum gate source voltage of 30V (VDSS) and a continuous drain current ID of up to 70A, demonstrating excellent current carrying capacity. More noteworthy is that the device has an extremely excellent conduction resistance RD (on) of only 5.7m R, which can significantly reduce power loss and improve the overall energy efficiency of the system under high current operating conditions. The SI7386DP-T1-E3 MOSFET is widely used in various high demand electronic applications such as power management and motor drives.]]></description>
</item>
<item>
	<title><![CDATA[NTMFS4C290N(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntmfs4c290n-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:20:55</pubDate>
	<description><![CDATA[NTMFS4C290N is a high-performance N-channel MOSFET, packaged using a compact DFN5X6-8L technology, specifically designed to adapt to the miniaturization trend of modern precision electronic equipment. This device has superior electrical characteristics, with a maximum voltage withstand value of VDSS up to 30V, and can withstand continuous drain current ID of up to 70A, ensuring stable operation in harsh environments. Especially outstanding is its ultra-low conduction resistance RD (on) of only 5.7m R, greatly reducing energy loss and improving energy utilization efficiency. Whether in power management, high-speed switching, or high current driving scenarios, NTMFS4C290N MOSFETs can meet your needs for efficient and energy-saving semiconductor components with excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[NTMFS4927N(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntmfs4927n-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:20:43</pubDate>
	<description><![CDATA[The NTMFS4927N N-channel MOSFET adopts advanced DFN5X6-8L packaging technology, which is compact and efficient, especially suitable for circuit board layouts with limited space. The core parameters of this device are powerful, with a working voltage VDSS of up to 30V and a continuous drain current ID of up to 70A, ensuring stable operating performance in high current environments. Especially outstanding is its ultra-low conduction resistance RD (on) of only 5.7m R, effectively reducing power loss and improving overall system efficiency. Whether in power control, motor drive, or other high-power applications, the NTMFS4927N MOSFET can provide strong support for you with its excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[NTMFS4926N(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntmfs4926n-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:20:30</pubDate>
	<description><![CDATA[NTMFS4926N is a high-performance N-channel MOSFET designed with a compact DFN5X6-8L package specifically for the miniaturization needs of modern electronic products. This device has excellent electrical parameters, a maximum withstand voltage of 30V VDSS, and a continuous drain current ID of up to 70A, ensuring stable operation in high-power applications. Its highlight lies in its extremely low conduction resistance RD (on), which is only 5.7m R, helping to reduce losses and improve efficiency. This MOSFET is an ideal choice for power conversion, motor drive, and other fields, meeting the needs of various high-end electronic devices with its excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[IRFH7914PBF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfh7914pbf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:20:18</pubDate>
	<description><![CDATA[The IRFH7914PBF N-channel MOSFET adopts advanced DFN5X6-8L packaging, which is compact and suitable for high-density circuit design. It has a rated voltage of 30V VDSS and a continuous drain current ID of up to 70A, ensuring strong power processing capabilities. It is worth mentioning that the device has an ultra-low conduction resistance RD (on) of only 5.7m R, which can significantly reduce power consumption and improve system energy efficiency. Whether it‘s power management or high-speed switching applications, this MOSFET can provide excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[FDMS8680(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdms8680-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:20:06</pubDate>
	<description><![CDATA[The FDMS8680 model MOS transistor adopts advanced DFN5X6-8L packaging form, with compact size and excellent heat dissipation performance. This N-channel MOSFET has a maximum operating voltage of 30V and can withstand continuous drain currents of up to 70A, meeting the requirements of high-power applications. Its prominent feature is that the conduction resistance is as low as 5.7m R, greatly improving energy efficiency and reducing power loss.]]></description>
</item>
<item>
	<title><![CDATA[AON6380(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon6380-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:19:53</pubDate>
	<description><![CDATA[The AON6380 MOSFET model adopts advanced DFN5X6-8L packaging technology, with a compact structure and excellent heat dissipation performance. As a high-performance N-channel MOSFET, it has a maximum withstand voltage of 30V and an amazing 70A continuous drain current capability, fully demonstrating its strong power processing performance. Especially noteworthy is the ultra-low conduction resistance of only 5.7m R, which greatly improves energy efficiency and reduces power loss. Widely used in high-power switching power supplies, fast chargers, motor drives and other high current fields, it is a leading high-performance semiconductor device solution in the industry.]]></description>
</item>
<item>
	<title><![CDATA[Si2308BDS-T1-GE3(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2308bds-t1-ge3-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:19:41</pubDate>
	<description><![CDATA[The Si2308BDS-T1-GE3 MOSFET model adopts a compact SOT-23-3L package, which is suitable for various integrated applications in small spaces. This high-performance N-channel MOSFET supports a working voltage of up to 60V and can withstand a drain current of 4.5A in a stable state, ensuring reliable operation under various high-voltage and high current conditions. Its conduction resistance is as low as 70m R, effectively improving energy conversion efficiency and reducing internal energy consumption in the system. Widely used in various scenarios such as power management, motor drive, and load switching, it is a key component in creating efficient and energy-saving electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[FDN86501LZ(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdn86501lz-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:19:29</pubDate>
	<description><![CDATA[The FDN86501LZ MOSFET model uses a space saving SOT-23-3L package, which is particularly suitable for modern precision circuit design requirements. As an N-channel MOSFET, it has a high voltage withstand level of 60V and a continuous drain current of 4.5A, enabling stable operation in harsh voltage and current environments. Its core advantage lies in its ultra-low conduction resistance of 70m R, which effectively reduces energy loss and improves system efficiency. Widely used in various electronic devices such as power converters, motor controls, load switches, etc., it is an ideal component choice for achieving high energy efficiency circuit design.]]></description>
</item>
<item>
	<title><![CDATA[FDN5632N-F085(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdn5632n-f085-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:19:17</pubDate>
	<description><![CDATA[The FDN5632N-F085 MOSFET model adopts a miniaturized SOT-23-3L packaging design, which is particularly suitable for integrated applications in compact spaces. This N-channel MOSFET provides a high rated voltage of 60V and a stable drain current of 4.5A, which can meet various high voltage and high current scenarios. Meanwhile, its conduction resistance is only 70m R, which helps optimize energy efficiency and reduce system losses. Suitable for a wide range of fields such as power conversion, load switching, and motor drive, it is a streamlined and efficient semiconductor solution.]]></description>
</item>
<item>
	<title><![CDATA[SMC8205AGW(TSSOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/smc8205agw-tssop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:19:05</pubDate>
	<description><![CDATA[The SMC8205AGW model MOSFET is designed with a space saving TSSOP-8 package, specifically for modern precision circuit design. This high-performance N+N channel MOSFET has a stable 20V voltage rating and strong 6A continuous drain current carrying capacity, ensuring excellent power control performance. Especially outstanding is that its conduction resistance is only as low as 21m R, which helps to significantly reduce power consumption and improve overall efficiency. Suitable for diversified application scenarios including switch mode power supplies, motor drives, and load switches, it is the best choice for pursuing efficient and energy-saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[DMN2040LTS(TSSOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn2040lts-tssop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:18:53</pubDate>
	<description><![CDATA[The DMN2040LTS MOSFET adopts a compact TSSOP-8 package, suitable for space limited design requirements. This N+N channel MOSFET stands out for its excellent electrical characteristics, with a maximum withstand voltage of 20V and a continuous drain current of 6A, ensuring stable operation in various application scenarios. Its highlight lies in the conduction resistance as low as 21m R, which significantly reduces power loss and improves energy utilization efficiency. Widely applicable in fields such as switching power supplies, LED lighting drivers, battery management systems, etc., it is an ideal component choice for high-performance electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BUK7210-55B(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/buk7210-55b-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:18:40</pubDate>
	<description><![CDATA[The MOS transistor model is BUK7210-55B, which adopts advanced TO-252-2L packaging and has excellent thermal performance and stability. As a high-performance N-channel MOSFET, it operates at a voltage of up to 60V and has a continuous drain current of up to 50A, demonstrating excellent power processing capabilities. In addition, the device has an excellent conduction resistance of only 11m R, effectively reducing power loss and improving system energy efficiency. It is suitable for various high-end power conversion, motor drive and other application fields, and is your ideal choice for achieving high-performance circuit design.]]></description>
</item>
<item>
	<title><![CDATA[IRLR3915PBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlr3915pbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:18:28</pubDate>
	<description><![CDATA[IRLR3915PBF is an N-channel MOSFET that adopts a compact and efficient TO-252-2L package, adapting to the trend of miniaturization in modern electronic devices. This device has a high rated drain source voltage (VDSS) of 60V and can withstand continuous drain current of up to 50A, demonstrating excellent power processing capabilities. The conduction resistance is as low as 11mR, significantly reducing energy consumption and improving system efficiency. This MOSFET is widely used in various applications such as switching power supplies, motor drives, chargers, etc. It is an ideal semiconductor component for pursuing high efficiency and low power consumption design.]]></description>
</item>
<item>
	<title><![CDATA[IRFR2905ZPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr2905zpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:18:16</pubDate>
	<description><![CDATA[IRFR2905ZPBF is a high-performance N-channel MOSFET device that utilizes advanced packaging technology TO-252-2L. Its core parameters are excellent, with a drain source withstand voltage of up to 60V, and it can sustain a high current of 50A, ensuring stable operation in high voltage and high current scenarios. The ultra-low conduction resistance RD (on) of 11mR greatly reduces power loss and improves energy utilization efficiency. This MOSFET is suitable for various fields such as switching power supplies, motor drives, power management, and is an ideal choice for achieving high energy efficiency electronic system design.]]></description>
</item>
<item>
	<title><![CDATA[IRFR2405PBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr2405pbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:18:04</pubDate>
	<description><![CDATA[IRFR2405PBF is a high-performance N-channel MOSFET packaged in TO-252-2L, which saves space and has excellent thermal performance. This device has a powerful maximum drain source withstand voltage (VDSS) of up to 60V and can provide a stable 50A continuous drain current to meet stringent power application requirements. Especially outstanding is its ultra-low conduction resistance RD (on) of only 11mR, effectively reducing energy loss and improving overall system efficiency. Widely used in fields such as switching power supply conversion, motor drive, battery management systems, etc., it is an ideal component for engineers to pursue high-efficiency and low-power design.]]></description>
</item>
<item>
	<title><![CDATA[IPD30N06S2-15(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ipd30n06s2-15-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:17:52</pubDate>
	<description><![CDATA[IPD30N06S2-15 is a high-performance N-channel MOSFET, packaged in the space saving TO-252-2L. It has excellent electrical parameters, with a maximum leakage source voltage VDSS of up to 60V, and can withstand a continuous drain current of 50A, demonstrating excellent load carrying capacity. More noteworthy is that its conduction resistance is only 11mR, which helps significantly reduce power consumption and improve system efficiency. This MOSFET is suitable for various types of switching power supplies, motor drive control, and efficient energy-saving electronic devices, making it an ideal choice for high-end power management and circuit design.]]></description>
</item>
<item>
	<title><![CDATA[STN2610D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/stn2610d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:16:27</pubDate>
	<description><![CDATA[STN2610D is a high-quality N-channel MOSFET, packaged in TO-252-2L, suitable for various compact design needs. This device has excellent electrical performance, with a maximum drain source voltage VDSS of 60V and a continuous drain current ID of up to 50A, demonstrating strong power processing capabilities. Especially outstanding is its conduction resistance RD (on) as low as 11mR, which helps reduce power loss and optimize energy efficiency. It is widely used in switching power supply conversion, motor drive, LED lighting and other fields, making it an ideal choice for your high-performance electronic design.]]></description>
</item>
<item>
	<title><![CDATA[FDD5353(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdd5353-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-04-23 10:09:25</pubDate>
	<description><![CDATA[This MOSFET model is FDD5353, which adopts advanced TO-252-2L packaging technology and belongs to high-performance N-channel MOSFET devices. It has a rated drain source voltage of up to 60V and a powerful 50A continuous drain current capability, ensuring stable operation in high current environments. The conduction resistance is only 11m Ω, effectively reducing power loss and improving system energy efficiency. It is particularly suitable for high demand application scenarios such as various switching power supplies, motor drives, and battery management systems.]]></description>
</item>
<item>
	<title><![CDATA[ET3157(SOT-363)]]></title>
	<category domain="http://www.hxymos.com/en/multiplexer/">Multiplexer</category>
	<link><![CDATA[http://www.hxymos.com/en/multiplexer/et3157-sot-363-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-06 12:47:18</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[MMSZ5248B(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mmsz5248b-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 11:05:37</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[MMSZ5246B(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mmsz5246b-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 11:05:29</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[MMSZ5240B(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mmsz5240b-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 11:05:21</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[MMSZ5231B(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mmsz5231b-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 11:05:12</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[MMSZ5226B(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mmsz5226b-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 11:05:04</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[MMSZ4689(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mmsz4689-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 11:04:56</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[MM5Z5V1(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z5v1-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 11:04:48</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[MM5Z4V7(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z4v7-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 11:04:40</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[MM5Z3V0(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z3v0-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 11:04:31</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[BZX84C8V2(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzx84c8v2-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 11:04:23</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[BZX84C5V6(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzx84c5v6-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 11:04:15</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[BZX84C4V7(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzx84c4v7-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 11:04:07</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[BZX84C3V9(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzx84c3v9-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 11:03:58</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[BZX84C3V3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzx84c3v3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 11:03:50</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[BZX84C16(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzx84c16-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 11:03:42</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[BZX84C15(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzx84c15-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 11:03:34</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[BZX84C10(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzx84c10-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 11:03:25</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[BZT52C6V8(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c6v8-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 11:03:17</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[MMBTA56(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mmbta56-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:59:05</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[MJD31C(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mjd31c-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:58:55</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[2SA1213(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/2sa1213-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:58:45</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[MMBTA55(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mmbta55-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:58:36</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[D882M(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/d882m-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:58:26</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[2SD882(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/2sd882-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:58:17</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[SS8050(TO-92)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/ss8050-to-92-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:58:07</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[2N2222A(TO-92)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/2n2222a-to-92-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:57:57</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[2SC2383(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/2sc2383-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:57:48</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[2N5551(TO-92)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/2n5551-to-92-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:57:38</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[S9013(TO-92)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/s9013-to-92-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:57:29</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[MMST3904(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mmst3904-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:57:19</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[DSS110(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/dss110-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:52:34</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[DSS16(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/dss16-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:52:25</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[BAT43W(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bat43w-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:52:17</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[BAT54CW(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bat54cw-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:52:08</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[B16WS(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/b16ws-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:51:59</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[MBRD10200CT(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mbrd10200ct-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:51:51</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[MBRD10100CT(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mbrd10100ct-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:51:42</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[MBRD20200CT(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mbrd20200ct-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:51:33</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[MBRD20100CT(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mbrd20100ct-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:51:24</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[DSS310(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/dss310-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:51:16</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[DSS24(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/dss24-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:51:07</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[BAV23S(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bav23s-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:50:58</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[MMBD7000LT1G(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mmbd7000lt1g-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:50:50</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[1SS226(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/1ss226-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:50:41</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[BAV74(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bav74-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:50:32</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[BAS316(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bas316-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:50:24</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[79L12(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/79l12-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:29:35</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HSCJT1117B-3.3(SOT-223)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hscjt1117b-3-3-sot-223-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:29:27</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[78L05(TO-92)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/78l05-to-92-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 10:29:20</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[SN74LVC1G3157DCKR(SOT-363)]]></title>
	<category domain="http://www.hxymos.com/en/multiplexer/">Multiplexer</category>
	<link><![CDATA[http://www.hxymos.com/en/multiplexer/sn74lvc1g3157dckr-sot-363-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:56:15</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[LM1875T(TO-220-5L/G)]]></title>
	<category domain="http://www.hxymos.com/en/audio-power-amplifier/">Audio amplifier</category>
	<link><![CDATA[http://www.hxymos.com/en/audio-power-amplifier/lm1875t-to-220-5l-g-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:56:02</pubDate>
	<description><![CDATA[Product Category: Audio amplifier     Packing: TO-220-5L/G      Parameter Introduction:Working temperature: 0 ℃~+70 ℃, power supply voltage: 60V,,     (Ordering Information):  Product Code: H102109     Minimum packaging: 50pcs      Gross weight/gram :2.653g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[LM324N(DIP-14)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/lm324n-dip-14-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:55:55</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[LM358P(DIP-8)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/lm358p-dip-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:55:48</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[DTA143ECA(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/digital-transistor/">Digital transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/digital-transistor/dta143eca-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:55:41</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[DTC123JE(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/digital-transistor/">Digital transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/digital-transistor/dtc123je-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:55:34</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[DTC114EUA(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/digital-transistor/">Digital transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/digital-transistor/dtc114eua-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:55:27</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[DTC143ZUA(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/digital-transistor/">Digital transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/digital-transistor/dtc143zua-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:55:20</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[DTC114ECA(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/digital-transistor/">Digital transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/digital-transistor/dtc114eca-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:55:13</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[DTC114EE(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/digital-transistor/">Digital transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/digital-transistor/dtc114ee-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:55:06</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[DTC144EE(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/digital-transistor/">Digital transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/digital-transistor/dtc144ee-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:54:59</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[PCF8563T(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/real-time-clock/">Real Time Clock</category>
	<link><![CDATA[http://www.hxymos.com/en/real-time-clock/pcf8563t-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:54:53</pubDate>
	<description><![CDATA[Product Category: Real Time Clock     Packing: SOP-8      Parameter Introduction:Working voltage: 4.5V~5.5V, working temperature: 0 ℃~+70 ℃,,     (Ordering Information):  Product Code: H102122     Minimum packaging: 2500pcs      Gross weight/gram :0.13g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[DS1307ZN(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/real-time-clock/">Real Time Clock</category>
	<link><![CDATA[http://www.hxymos.com/en/real-time-clock/ds1307zn-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:54:46</pubDate>
	<description><![CDATA[Product Category: Real Time Clock     Packing: SOP-8      Parameter Introduction:Working voltage: 4.5V~5.5V, working temperature: 0 ℃~+70 ℃,,     (Ordering Information):  Product Code: H102124     Minimum packaging: 2500pcs      Gross weight/gram :0.146g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[DS1302ZN(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/real-time-clock/">Real Time Clock</category>
	<link><![CDATA[http://www.hxymos.com/en/real-time-clock/ds1302zn-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:54:39</pubDate>
	<description><![CDATA[Product Category: Real Time Clock     Packing: SOP-8      Parameter Introduction:Working voltage: 2V~5.5V, working temperature: 0 ℃~+70 ℃,,     (Ordering Information):  Product Code: H102126     Minimum packaging: 2500pcs      Gross weight/gram :0.13g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[LM331N(DIP-8)]]></title>
	<category domain="http://www.hxymos.com/en/more/">More</category>
	<link><![CDATA[http://www.hxymos.com/en/more/lm331n-dip-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:54:32</pubDate>
	<description><![CDATA[Product Category: Analog to digital conversion chip ADC     Packing: DIP-8      Parameter Introduction:Power supply voltage: 40V, operating temperature: 0 ℃~+70 ℃,,     (Ordering Information):  Product Code: H102118     Minimum packaging: 50pcs      Gross weight/gram :0.808g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[LM331MX(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/more/">More</category>
	<link><![CDATA[http://www.hxymos.com/en/more/lm331mx-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:54:25</pubDate>
	<description><![CDATA[Product Category: Analog to digital conversion chip ADC     Packing: SOP-8      Parameter Introduction:Power supply voltage: 40V, operating temperature: 0 ℃~+70 ℃,,     (Ordering Information):  Product Code: H102119     Minimum packaging: 2500pcs      Gross weight/gram :0.141g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SA555DR(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/real-time-clock/">Real Time Clock</category>
	<link><![CDATA[http://www.hxymos.com/en/real-time-clock/sa555dr-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:54:18</pubDate>
	<description><![CDATA[Product Category: CLOCK CHIP     Packing: SOP-8      Parameter Introduction:Power supply voltage: 4.5V~16V, operating temperature: 0 ℃~+70 ℃,,     (Ordering Information):  Product Code: H102117     Minimum packaging: 2500pcs      Gross weight/gram :0.111g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[NE555P(DIP-8)]]></title>
	<category domain="http://www.hxymos.com/en/real-time-clock/">Real Time Clock</category>
	<link><![CDATA[http://www.hxymos.com/en/real-time-clock/ne555p-dip-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:54:11</pubDate>
	<description><![CDATA[Product Category: CLOCK CHIP     Packing: DIP-8      Parameter Introduction:Power supply voltage: 4.5V~16V, operating temperature: 0 ℃~+70 ℃,,     (Ordering Information):  Product Code: H102129     Minimum packaging: 50pcs      Gross weight/gram :0.707g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[LM393P(DIP-8)]]></title>
	<category domain="http://www.hxymos.com/en/comparer/">Comparer</category>
	<link><![CDATA[http://www.hxymos.com/en/comparer/lm393p-dip-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:54:04</pubDate>
	<description><![CDATA[Product Category: Comparer     Packing: DIP-8      Parameter Introduction:Input offset voltage (Vos): 5mV, input bias current (Ib): 25nA, operating temperature: 0 ℃~+70 ℃,     (Ordering Information):  Product Code: H102128     Minimum packaging: 50pcs      Gross weight/gram :0.759g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[LM339N(DIP-14)]]></title>
	<category domain="http://www.hxymos.com/en/comparer/">Comparer</category>
	<link><![CDATA[http://www.hxymos.com/en/comparer/lm339n-dip-14-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:53:57</pubDate>
	<description><![CDATA[Product Category: Comparer     Packing: DIP-14      Parameter Introduction:Input offset voltage (Vos): 9mV, input bias current (Ib): 250nA, operating temperature: 0 ℃~+70 ℃,     (Ordering Information):  Product Code: H102131     Minimum packaging: 25pcs      Gross weight/gram :1.551g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[LM293DR(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/comparer/">Comparer</category>
	<link><![CDATA[http://www.hxymos.com/en/comparer/lm293dr-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:53:50</pubDate>
	<description><![CDATA[Product Category: Comparer     Packing: SOP-8      Parameter Introduction:Input offset voltage (Vos): 5mV, input bias current (Ib): 25nA, operating temperature: 0 ℃~+70 ℃,     (Ordering Information):  Product Code: H102132     Minimum packaging: 2500pcs      Gross weight/gram :0.121g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[LM293ADR(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/comparer/">Comparer</category>
	<link><![CDATA[http://www.hxymos.com/en/comparer/lm293adr-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:53:43</pubDate>
	<description><![CDATA[Product Category: Comparer     Packing: SOP-8      Parameter Introduction:Input offset voltage (Vos): 5mV, input bias current (Ib): 25nA, operating temperature: 0 ℃~+70 ℃,     (Ordering Information):  Product Code: H102127     Minimum packaging: 2500pcs      Gross weight/gram :0.111g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MC33063ADR2G(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/dc-dc-power-chip/">DC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/dc-dc-power-chip/mc33063adr2g-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:50:48</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HCJU30P10(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hcju30p10-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:29:12</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 30, voltage/V: 100, internal resistance Typ/mR: 48, VGS: 20, type: P,     (Ordering Information):  Product Code: H103615     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCJ3139K(SOT-723)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hcj3139k-sot-723-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:29:03</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-723      Parameter Introduction:Current/A: 0.7, Voltage/V: 20, Internal Resistance Typ/mR: 450, VGS: 10, Type: P,     (Ordering Information):  Product Code: H103616     Minimum packaging: 8000pcs      Gross weight/gram :0.007g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HCJ3134K(SOT-723)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hcj3134k-sot-723-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-02 09:28:54</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-723      Parameter Introduction:Current/A: 1.2, Voltage/V: 20, Internal Resistance Typ/mR: 150, VGS: 12, Type: N,     (Ordering Information):  Product Code: H103614     Minimum packaging: 8000pcs      Gross weight/gram :0.009g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MMSZ5245B(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mmsz5245b-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:39:59</pubDate>
	<description><![CDATA[This SOD-123 packaged high-performance voltage regulator diode has a stable voltage of 15V (VZ) and an ultra-low reverse leakage current IR of only 0.1uA. Excellent performance under 5mA IZT conditions, with a maximum dissipated power of 0.5W, ensuring high efficiency and long-term stable operation. Specially designed for precision circuits, it is an ideal choice for high voltage regulation and system protection, suitable for circuit applications in various harsh environments.]]></description>
</item>
<item>
	<title><![CDATA[MMSZ5242B(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mmsz5242b-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:39:50</pubDate>
	<description><![CDATA[This SOD-123 packaged voltage regulator diode has excellent voltage stability performance (VZ: 12V) and an extremely low reverse leakage current IR of only 0.1uA. Excellent performance under a 5mA IZT test, with a maximum dissipated power of 0.5W, ensuring efficient and low heat operation. Its precise and stable characteristics are suitable for various high demand circuit designs, making it an ideal choice for system protection and voltage regulation.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C5V6(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c5v6-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:39:42</pubDate>
	<description><![CDATA[This SOD-123 packaged voltage regulator diode has a stable voltage of 5.6V (VZ) and an ultra-low reverse current of 1uA (IR), exhibiting excellent performance under 5mA IZT conditions. Efficient design with a maximum dissipation power of 0.2W ensures stable and reliable equipment operation, making it an ideal choice for precision circuits.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C5V1(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c5v1-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:39:33</pubDate>
	<description><![CDATA[This SOD-123 packaged voltage regulator diode has a precise 5.1V stable voltage (VZ) and a reverse current IR as low as 2uA, exhibiting excellent performance under 5mA IZT conditions. With its maximum dissipation power design of 0.2W, it ensures efficient and stable operation in various applications, making it an ideal choice for circuit protection and voltage stabilization control, suitable for applications with high voltage accuracy requirements.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C4V7(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c4v7-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:39:25</pubDate>
	<description><![CDATA[This SOD-123 packaged voltage regulator diode has a stable voltage of 4.7V (VZ) and a lower reverse current IR of 3uA, which can maintain high performance under a 5mA IZT. Its maximum dissipated power is 0.2W, effectively ensuring operational stability and reliability. It is suitable for various circuit designs that require precise voltage control and is the ideal choice for your system protection and voltage stabilization scheme.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C13(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c13-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:39:16</pubDate>
	<description><![CDATA[This SOD-123 packaged precision voltage regulator diode provides a stable 13V voltage (VZ) and excellent low reverse leakage current characteristics with an IR of only 0.1uA. It performs well under 5mA IZT testing. Its maximum dissipation power is 0.2W, ensuring efficient and stable operation. Suitable for various circuit designs that require strict voltage accuracy, it is your ideal high stability and low-power voltage stabilization solution.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C12(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c12-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:39:07</pubDate>
	<description><![CDATA[This SOD-123 packaged precision voltage regulator diode has a stable voltage of 12V (VZ) and an ultra-low reverse leakage current IR of only 0.1uA, demonstrating excellent performance under 5mA IZT conditions. Its maximum dissipation power is 0.2W, ensuring efficient and low-power operation in various applications. It is an ideal choice for circuit protection and precise voltage stabilization control, especially suitable for design schemes that require strict voltage stability.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C10(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c10-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:38:59</pubDate>
	<description><![CDATA[This SOD-123 packaged voltage regulator diode has a stable 10V voltage (VZ) and an ultra-low reverse current IR of only 0.2uA, exhibiting excellent performance under a 5mA IZT condition. The maximum dissipation power is 0.2W, ensuring efficient and stable operation, making it an ideal choice for precision circuit design, especially suitable for application scenarios with strict requirements for voltage control accuracy and power consumption.]]></description>
</item>
<item>
	<title><![CDATA[1SMA4749A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/1sma4749a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:38:50</pubDate>
	<description><![CDATA[This high-performance voltage regulator diode packaged in SMA has a stable 24V voltage (VZ) and 5uA low reverse current IR, and performs well under 11mA IZT conditions. Its maximum dissipated power is 2W, ensuring efficient and stable operation under high loads. Specially designed for harsh environments, it is an ideal solution for high voltage system protection and precision voltage regulation control, suitable for various high-power circuit applications.]]></description>
</item>
<item>
	<title><![CDATA[2SC2873(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/2sc2873-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:23:21</pubDate>
	<description><![CDATA[This SOT-89 packaged high-performance NPN transistor has a VCEO breakdown voltage of 50V and a continuous current capability of up to 2A. The amplification factor ranges from 120 to 240, making it suitable for high current applications, providing stable signal amplification and efficient switching control functions.]]></description>
</item>
<item>
	<title><![CDATA[MMBT3904T(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mmbt3904t-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:23:11</pubDate>
	<description><![CDATA[This SOT-523 packaged NPN type transistor has a high VCEO voltage of 40V and a stable IC current of 0.2A. Its amplification factor is between 100 and 300, and its performance is superior. It is suitable for various precision electronic circuits and provides efficient signal amplification solutions.]]></description>
</item>
<item>
	<title><![CDATA[BCX53-16(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bcx53-16-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:23:01</pubDate>
	<description><![CDATA[This SOT-89 packaged PNP transistor has a VCEO voltage of up to 80V and a strong continuous current carrying capacity of 1A. The amplification factor ranges from 100 to 250, making it suitable for high-power electronic systems and providing excellent signal amplification and switch control functions.]]></description>
</item>
<item>
	<title><![CDATA[2SC4617(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/2sc4617-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:22:41</pubDate>
	<description><![CDATA[This SOT-523 packaged NPN transistor has a high voltage withstand (VCEO) value of 50V and a current carrying capacity of 0.15A. Its amplification range is between 180 and 390, and it has excellent linear amplification performance. Suitable for various precision electronic devices, providing stable and efficient signal amplification function.]]></description>
</item>
<item>
	<title><![CDATA[BAV21W(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bav21w-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:12:54</pubDate>
	<description><![CDATA[This SOD-123 packaged switching diode is designed specifically for high-frequency and low loss applications, with a high reverse withstand voltage of 250V and a maximum forward current of 0.2A, ensuring stable switching in the circuit. The ultra-low forward conduction voltage VF of 1V effectively reduces power consumption, making it an ideal choice for high-speed signal transmission and small signal processing. It is suitable for achieving switch functions in various precision electronic devices and integrated circuits.]]></description>
</item>
<item>
	<title><![CDATA[S10MC(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/s10mc-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:12:45</pubDate>
	<description><![CDATA[This high-performance general-purpose diode is packaged in SMC and has excellent electrical performance with a high reverse voltage resistance of 1000V, ensuring safe operation under harsh conditions; 10A high rated forward current carrying capacity, suitable for high-power applications; The forward conduction voltage drop as low as 1V ensures high efficiency and energy-saving effects. Suitable for various power conversion, inverter systems, and circuits that require high stability and reliability.]]></description>
</item>
<item>
	<title><![CDATA[B340A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/b340a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:06:31</pubDate>
	<description><![CDATA[This high-performance diode is packaged in SMA and designed specifically for high-performance applications. Its rated parameters include VR=40V, IF=3A, and VF only 0.55V, ensuring low loss, high current carrying capacity, and excellent stability. It is an ideal choice for power conversion, switching circuits, and more.]]></description>
</item>
<item>
	<title><![CDATA[DSK16(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/dsk16-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:06:22</pubDate>
	<description><![CDATA[This SOD-123FL packaged Schottky diode has a reverse withstand voltage of 60V and a continuous forward current of 1A. Its outstanding advantage lies in its ultra-low forward conduction voltage VF of only 0.7V, ensuring excellent performance in low voltage and high efficiency applications. Suitable for compact designs such as various power adapters, high-frequency switching circuits, DC-DC converters, and battery protection, providing fast response and low loss rectification solutions.]]></description>
</item>
<item>
	<title><![CDATA[SB10100L(TO-277)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/sb10100l-to-277-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:06:12</pubDate>
	<description><![CDATA[This Schottky diode, packaged in TO-277, has a high reverse withstand voltage of 100V and a continuous forward current processing capability of up to 10A. Its superior VF value is only 0.67V, ensuring low power consumption and high efficiency in high-power applications. Suitable for DC-DC conversion, switching power supply rectification, high-frequency inverters and other fields, providing high-quality solutions with high speed and low loss for professional electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[SS510C(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss510c-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:06:03</pubDate>
	<description><![CDATA[This SMC packaged Schottky diode is known for its high efficiency, with a high reverse withstand voltage of 100V and a high current processing capacity of 5A. Its outstanding forward conduction voltage VF is only 0.85V, ensuring excellent performance under high-speed switching and low power consumption conditions. It is suitable for various power converters, high-frequency switching circuits, and high-end electronic devices that require fast response and low loss rectification functions.]]></description>
</item>
<item>
	<title><![CDATA[DSK36(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/dsk36-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:05:53</pubDate>
	<description><![CDATA[This SOD-123FL packaged Schottky diode has a high reverse withstand voltage of 60V and a high current carrying capacity of 3A. Especially outstanding is its ultra-low forward conduction voltage VF of only 0.7V, ensuring excellent energy efficiency performance in low voltage differential and high current applications. Suitable for compact designs such as power adapters, high-frequency switching circuits, and battery management systems that require high efficiency and fast response.]]></description>
</item>
<item>
	<title><![CDATA[B240A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/b240a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:05:44</pubDate>
	<description><![CDATA[This SMA packaged Schottky diode has a high reverse withstand voltage of 40V and a strong forward current capability of 2A. Its excellent forward conduction voltage VF is as low as 0.55V, ensuring efficient performance and fast recovery in low-power applications. Suitable for circuit designs with strict efficiency requirements such as switching power supplies, high-frequency signal rectification, and battery management systems.]]></description>
</item>
<item>
	<title><![CDATA[SK1010C(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/sk1010c-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:05:34</pubDate>
	<description><![CDATA[This SMC packaged Schottky diode has a high reverse withstand voltage of 100V and 1A continuous forward current processing capability. Its forward conduction voltage VF is 0.85V, ensuring low power consumption and fast response in high-performance applications. Suitable for power conversion, high-frequency switching circuits, and demanding rectification requirements, it is an ideal choice for compact and high-performance electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[ST2045(TO-277)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/st2045-to-277-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:05:24</pubDate>
	<description><![CDATA[This high-performance Schottky diode, packaged in TO-277, is designed specifically for high current applications. It has a high reverse withstand voltage of 45V and a continuous forward current capacity of up to 20A, with a forward conduction voltage as low as 0.52V, ensuring excellent energy efficiency and lower losses in high-power switching power supplies, high-frequency rectifiers, and inverters. Its sturdy and durable design is suitable for high-performance circuit solutions in harsh environments.]]></description>
</item>
<item>
	<title><![CDATA[MBR0530T1G(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mbr0530t1g-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:05:15</pubDate>
	<description><![CDATA[This Schottky diode, which adopts SOD-123 small package, has a reverse withstand voltage of 30V and a forward current capacity of 0.5A. Its excellent forward conduction voltage VF is as low as 0.55V, ensuring high efficiency and low power consumption performance in low voltage differential applications. Suitable for various portable devices, power adapters, and circuit designs that require fast recovery time and efficient rectification.]]></description>
</item>
<item>
	<title><![CDATA[SS510B(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss510b-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:05:05</pubDate>
	<description><![CDATA[This SMB packaged Schottky diode has a high reverse withstand voltage of 100V and a high current processing capacity of 5A, designed specifically for efficient rectification. Its superior forward conduction voltage VF is as low as 0.85V, ensuring lower power consumption and faster switching speed. It is suitable for high-frequency switching power supplies, DC-DC converters, and other circuit applications that require high-speed and low loss rectification functions.]]></description>
</item>
<item>
	<title><![CDATA[SS2200(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss2200-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:04:56</pubDate>
	<description><![CDATA[This Schottky diode, packaged in SMA, has a high reverse withstand voltage of 200V and 2A continuous forward current processing capability. Its excellent forward conduction voltage VF is as low as 0.95V, ensuring efficient and low-power operation in medium voltage applications. Suitable for internal circuit design of switching power supplies, high-frequency signal rectification, and electronic devices that require fast switching and energy-saving functions.]]></description>
</item>
<item>
	<title><![CDATA[DSK310(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/dsk310-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:04:46</pubDate>
	<description><![CDATA[This SOD-123FL packaged Schottky diode has a high reverse withstand voltage of 100V and a strong forward current carrying capacity of 3A. Its leading forward conduction voltage VF is only 0.55V, ensuring excellent energy efficiency and fast response in high current and low voltage differential applications. Suitable for power converters, high-frequency switching circuits, and compact designs that require high-performance rectification functions.]]></description>
</item>
<item>
	<title><![CDATA[MBR0540T1G(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mbr0540t1g-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:04:37</pubDate>
	<description><![CDATA[This SOD-123 packaged Schottky diode has a 40V reverse withstand voltage and 0.5A forward current capability. Its excellent forward conduction voltage VF is 0.55V, ensuring excellent performance in low voltage, high-speed switching, and efficient rectification applications. Suitable for miniaturized power adapters, battery charging protection circuits, and other design scenarios that require high efficiency and fast recovery time.]]></description>
</item>
<item>
	<title><![CDATA[DSS14(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/dss14-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:04:27</pubDate>
	<description><![CDATA[This SOD-123FL packaged Schottky diode provides 40V high reverse withstand voltage and 1A continuous forward current processing capability. Its excellent forward conduction voltage VF is as low as 0.55V, ensuring excellent performance in high efficiency and low voltage differential applications. Suitable for applications such as power adapters, high-frequency switching circuits, and battery management systems that require fast response and energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[DSK14(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/dsk14-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:04:17</pubDate>
	<description><![CDATA[This SOD-123FL packaged diode has a high reverse withstand voltage of 40V and a forward current carrying capacity of 1A. Its excellent forward conduction voltage VF is as low as 0.55V, ensuring excellent performance in low voltage and high efficiency applications. Suitable for power adapters, battery charging protection, high-frequency switching circuits, and other designs that require compact and efficient rectification solutions.]]></description>
</item>
<item>
	<title><![CDATA[SS110(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss110-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:04:08</pubDate>
	<description><![CDATA[This SMA packaged diode has a high reverse withstand voltage of 100V and a forward current carrying capacity of 1A. Its forward conduction voltage VF is 0.85V. Specially designed for efficient and low loss rectification applications, suitable for internal circuits in power converters, switching power supplies, and other electronic devices that require high-speed switching and stable performance.]]></description>
</item>
<item>
	<title><![CDATA[DSK26(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/dsk26-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:03:58</pubDate>
	<description><![CDATA[This SOD-123FL packaged Schottky diode has a high reverse withstand voltage of 60V and a high current processing capacity of 2A. Its excellent forward conduction voltage VF is only 0.7V, ensuring excellent performance in low voltage differential and high-efficiency applications. Suitable for power conversion, high-frequency switching circuits, and electronic device designs that require low power consumption and fast recovery.]]></description>
</item>
<item>
	<title><![CDATA[BAT46W(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bat46w-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:03:49</pubDate>
	<description><![CDATA[This diode, which adopts SOD-123 micro packaging, has a high reverse withstand voltage of 100V and a forward current capacity of 0.15A. Its excellent forward conduction voltage VF is only 0.25V, making it particularly suitable for low voltage, low power consumption, and high-performance applications. Suitable for precision signal processing, battery protection circuits, and other electronic designs that require ultra-low VF characteristics.]]></description>
</item>
<item>
	<title><![CDATA[SS54(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss54-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:03:39</pubDate>
	<description><![CDATA[This SMA packaged diode has a high reverse withstand voltage of 40V and a strong forward current processing capability of 5A. Its excellent forward conduction voltage VF is only 0.55V, designed specifically for high-efficiency and high current rectification applications. Suitable for power converters, switching power supplies, and internal circuits of electronic devices that require high-speed switching and low-power performance.]]></description>
</item>
<item>
	<title><![CDATA[MBR0520(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mbr0520-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 03:03:30</pubDate>
	<description><![CDATA[This small diode, packaged in SOD-123, has a reverse withstand voltage of 20V and a forward current carrying capacity of 0.5A. Its excellent forward conduction voltage VF is as low as 0.45V, ensuring extremely high efficiency and ultra-low power consumption in low voltage differential applications. Suitable for precision electronic devices, power management modules, and battery protection circuits that require strict energy conservation and performance requirements.]]></description>
</item>
<item>
	<title><![CDATA[US1D(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/us1d-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:59:19</pubDate>
	<description><![CDATA[This fast recovery diode is packaged in SMA and has a high reverse withstand voltage of 200V and a forward current capacity of 1A. Its forward conduction voltage VF is 1V. Suitable for switch mode power supplies, high-frequency inverters, and other electronic circuits that require efficient rectification and fast recovery characteristics, providing stable and reliable surge protection and low loss performance.]]></description>
</item>
<item>
	<title><![CDATA[ES2DB(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/es2db-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:59:09</pubDate>
	<description><![CDATA[This diode, packaged in SMB, has a high reverse withstand voltage of 100V and 2A forward current processing capability. Its forward conduction voltage VF is 0.95V. Specially designed for efficient and low loss rectifier applications, widely used in power adapters, switching power supplies, and various electronic devices that require fast response and stable performance in circuit systems.]]></description>
</item>
<item>
	<title><![CDATA[SOD1F7(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/sod1f7-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:59:00</pubDate>
	<description><![CDATA[This fast recovery diode is packaged in SOD-123FL and has excellent 1000V reverse withstand voltage and 1A forward current capability. The fast recovery feature and 1.3V forward conduction voltage VF make it an excellent choice for efficient power management and protection in high-voltage conversion and high-frequency switching applications.]]></description>
</item>
<item>
	<title><![CDATA[MUR860(TO-220C-2L)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mur860-to-220c-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:58:50</pubDate>
	<description><![CDATA[This TO-220-2L packaged fast recovery diode provides 600V high reverse withstand voltage and 8A high current processing capability, with a forward conduction voltage VF of 1.5V. Specially suitable for efficient rectification applications in high-power switching power supplies, motor drives, and inverters, with excellent surge resistance and fast recovery characteristics.]]></description>
</item>
<item>
	<title><![CDATA[MUR1560(TO-220C-2L)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mur1560-to-220c-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:58:41</pubDate>
	<description><![CDATA[This high-performance fast recovery diode, packaged in TO-220-2L, has a high reverse withstand voltage of 600V and a high current processing capacity of 15A. Its forward conduction voltage VF is 1.5V. Especially suitable for efficient rectification in high-power switching power supplies, motor drives, and industrial inverters, providing fast recovery characteristics and excellent surge resistance.]]></description>
</item>
<item>
	<title><![CDATA[MUR1620CT(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mur1620ct-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:58:31</pubDate>
	<description><![CDATA[This high-performance fast recovery diode, packaged in TO-220, has a high reverse withstand voltage of 200V and a large current carrying capacity of 16A. Its forward conduction voltage VF is as low as 0.975V. Specially designed for efficient and high current rectification applications, suitable for switch mode power supplies, inverters, and motor drive systems, providing fast recovery and low loss characteristics.]]></description>
</item>
<item>
	<title><![CDATA[HC4D20120A(TO-220H-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc4d20120a-to-220h-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:47:03</pubDate>
	<description><![CDATA[This silicon carbide Schottky diode is packaged in TO-220-2L and has a high reverse withstand voltage of 1200V and a continuous forward current capability of up to 20A. Its forward conduction voltage VF is 1.5V. Specially designed for high-performance power conversion, electric vehicle charging, and industrial inverters, providing excellent high-temperature stability, ultra-low loss, and fast switching characteristics.]]></description>
</item>
<item>
	<title><![CDATA[HC6D15120A(TO-220C-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc6d15120a-to-220c-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:46:53</pubDate>
	<description><![CDATA[This silicon carbide Schottky diode is packaged in TO-220-2L and has an ultra-high reverse withstand voltage of 1200V and a high current capacity of 15A. Its forward conduction voltage VF is as low as 1.27V. Specially designed for high-efficiency, high-frequency switching power converters and electric vehicle charging systems, achieving excellent heat dissipation performance and ultra fast recovery time, adapting to the rectification requirements in harsh environments.]]></description>
</item>
<item>
	<title><![CDATA[HC4D40120H(TO-247-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc4d40120h-to-247-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:46:44</pubDate>
	<description><![CDATA[This silicon carbide Schottky diode is packaged in TO-247-2L and has a high reverse voltage of 1200V and a high current processing capacity of up to 40A. Its forward conduction voltage VF is 1.5V. Especially suitable for efficient rectification in high-end power conversion, new energy vehicles, and industrial inverters, it has excellent high-temperature stability and fast recovery characteristics.]]></description>
</item>
<item>
	<title><![CDATA[HC4D40120D(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc4d40120d-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:46:34</pubDate>
	<description><![CDATA[This silicon carbide Schottky diode, packaged in TO-247, has an ultra-high reverse voltage of 1200V and a strong forward current capability of 40A. Its forward conduction voltage VF is 1.5V. Specially designed for high-power, high-frequency switching, and high-efficiency power electronic systems, suitable for rectification and continuous current applications in harsh environments such as solar inverters and electric vehicle chargers.]]></description>
</item>
<item>
	<title><![CDATA[HC4D30120H(TO-247-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc4d30120h-to-247-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:46:25</pubDate>
	<description><![CDATA[This silicon carbide Schottky diode is packaged in TO-247-2L and has a high reverse voltage of 1200V and a high current carrying capacity of 30A. Its forward conduction voltage VF is as low as 1.5V. Specially designed for efficient and high-frequency switching applications, suitable for high-end power conversion and rectification needs in harsh environments such as solar inverters and electric vehicle charging systems.]]></description>
</item>
<item>
	<title><![CDATA[HC4D30120D(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc4d30120d-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:46:15</pubDate>
	<description><![CDATA[This silicon carbide Schottky diode is packaged in TO-247 and provides a high reverse withstand voltage of 1200V and a continuous forward current capability of 30A. Its forward conduction voltage VF is 1.5V. Specially designed for high voltage and high current applications, such as power converters, new energy vehicle charging systems, and industrial inverters, to achieve high-efficiency, high-speed, and high reliability rectification.]]></description>
</item>
<item>
	<title><![CDATA[HC4D20120H(TO-247-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc4d20120h-to-247-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:46:06</pubDate>
	<description><![CDATA[This silicon carbide Schottky diode is packaged in TO-247-2L and has a high reverse voltage of 1200V and a high current carrying capacity of 20A. Its forward conduction voltage VF is 1.5V. Specially designed for high-end power conversion, electric vehicle charging systems, and industrial applications, providing excellent high-temperature stability and fast recovery performance, achieving efficient power rectification solutions.]]></description>
</item>
<item>
	<title><![CDATA[HC4D20120D(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc4d20120d-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:45:56</pubDate>
	<description><![CDATA[The silicon carbide Schottky diode is packaged in TO-247 and has a high voltage resistance of 1200V and a high current processing capacity of 20A. The forward conduction voltage VF is 1.5V. Specially designed for efficient and high-voltage environments, widely used in power converters, electric vehicle charging systems, and industrial grade power equipment, achieving high-performance rectification functions with fast recovery and low loss.]]></description>
</item>
<item>
	<title><![CDATA[HC4D15120H(TO-247-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc4d15120h-to-247-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:45:46</pubDate>
	<description><![CDATA[This silicon carbide Schottky diode is packaged in TO-247-2L and has a high reverse voltage of 1200V and a high current capacity of 15A. Its forward conduction voltage VF is 1.5V. Especially suitable for the fields of new energy, industrial power conversion, and electric vehicle charging, providing high efficiency, low loss, and excellent high-temperature stability, achieving fast rectification response.]]></description>
</item>
<item>
	<title><![CDATA[HC4D10120H(TO-247-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc4d10120h-to-247-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:45:37</pubDate>
	<description><![CDATA[This silicon carbide Schottky diode is packaged in TO-247-2L and has a high reverse withstand voltage of 1200V and a continuous forward current carrying capacity of 10A. Its forward conduction voltage VF is 1.5V. Specially designed for efficient and high-voltage power conversion systems, such as new energy vehicle chargers and industrial grade power equipment, providing excellent high-temperature stability and fast recovery rectification efficiency.]]></description>
</item>
<item>
	<title><![CDATA[HC4D10120D(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc4d10120d-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:45:27</pubDate>
	<description><![CDATA[This silicon carbide Schottky diode is packaged in TO-247 and has a high reverse withstand voltage of 1200V and a continuous forward current capability of up to 10A. Its forward conduction voltage VF is as low as 1.4V. Specially designed for efficient and high-voltage environments, applied in power converters, new energy vehicle charging systems, and industrial grade power equipment, achieving high-performance rectification functions with fast recovery and low loss.]]></description>
</item>
<item>
	<title><![CDATA[HC4D10120A(TO-220C-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc4d10120a-to-220c-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:45:18</pubDate>
	<description><![CDATA[The silicon carbide Schottky diode is packaged in TO-220-2L and has a high reverse withstand voltage of 1200V and a high current processing capacity of 10A. Its forward conduction voltage VF is as low as 1.35V. Specially designed for efficient and high-voltage power conversion systems, widely used in new energy vehicle charging, industrial inverters, and other occasions, achieving high-quality rectification performance with fast recovery and low loss.]]></description>
</item>
<item>
	<title><![CDATA[HC4D08120A(TO-220C-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc4d08120a-to-220c-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:45:08</pubDate>
	<description><![CDATA[This silicon carbide Schottky diode is packaged in TO-220-2L and has a high reverse voltage of 1200V and 8A continuous forward current processing capability. The forward conduction voltage VF is 1.5V. Specially designed for high voltage and high-efficiency application scenarios, such as new energy vehicle charging systems and industrial power converters, achieving excellent high-temperature stability and fast recovery rectification performance.]]></description>
</item>
<item>
	<title><![CDATA[HC4D05120A(TO-220C-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc4d05120a-to-220c-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:44:59</pubDate>
	<description><![CDATA[This silicon carbide Schottky diode is packaged in TO-220-2L and has a high reverse withstand voltage of 1200V and a continuous forward current carrying capacity of 5A. Its forward conduction voltage VF is as low as 1.4V. Suitable for high-efficiency power conversion, industrial inverters, and new energy systems, it has excellent high-temperature stability and fast recovery characteristics, achieving miniaturization and energy-saving rectification solutions.]]></description>
</item>
<item>
	<title><![CDATA[HC3D20065A(TO-220C-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc3d20065a-to-220c-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:44:49</pubDate>
	<description><![CDATA[This silicon carbide Schottky diode is packaged in TO-220-2L and has a high reverse withstand voltage of 650V and a continuous forward current processing capability of 20A. Its forward conduction voltage VF is as low as 1.5V. Designed specifically for high-efficiency, high current switching power supplies and inverters, it is an ideal rectification solution for fast recovery and high-temperature stability.]]></description>
</item>
<item>
	<title><![CDATA[HC3D10170H(TO-247-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc3d10170h-to-247-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:44:40</pubDate>
	<description><![CDATA[This silicon carbide Schottky diode is packaged in TO-247-2L and has a 1700V ultra-high reverse withstand voltage and 10A continuous forward current processing capability. Its forward conduction voltage VF is only 1.5V. Specially designed for high-end power conversion, new energy, and industrial inverter applications, providing excellent high-temperature stability and fast recovery performance, achieving high-efficiency rectification solutions.]]></description>
</item>
<item>
	<title><![CDATA[HC3D10170A(TO-220C-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc3d10170a-to-220c-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:44:30</pubDate>
	<description><![CDATA[This silicon carbide Schottky diode is packaged in TO-220-2L and has an ultra-high reverse voltage of 1700V and a large current carrying capacity of 10A. The forward conduction voltage VF is only 1.7V. Suitable for high-voltage power conversion, photovoltaic inverter, and industrial grade power supply systems, providing excellent high-temperature stability and fast recovery performance, achieving efficient rectification solutions.]]></description>
</item>
<item>
	<title><![CDATA[HC3D10065A(TO-220C-2L)]]></title>
	<category domain="http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/">SiC Schottky</category>
	<link><![CDATA[http://www.hxymos.com/en/sic-schottky-diode--silicon-carbide-/hc3d10065a-to-220c-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:44:21</pubDate>
	<description><![CDATA[This silicon carbide Schottky diode is packaged in TO-220-2L and has a high reverse withstand voltage of 650V and a high current processing capacity of 10A. The forward conduction voltage VF is 1.5V. Suitable for high-efficiency power conversion, new energy vehicles, and industrial fields, providing high-quality rectification solutions with low loss and fast recovery, ensuring stable operation under harsh conditions.]]></description>
</item>
<item>
	<title><![CDATA[SD05(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/sd05-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:28:41</pubDate>
	<description><![CDATA[This SOD-323 packaged unidirectional ESD electrostatic protection diode is particularly suitable for 5V system applications, providing up to 28A peak pulse current IPP protection capability, effectively resisting high-intensity transient ESD impacts. The 1-channel design ensures a streamlined circuit layout, with a junction capacitance of 200pF. While ensuring excellent ESD protection performance, it also considers the transmission quality of high-speed signal lines, making it an ideal component choice for high integration and anti-static interference electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[GBLC05C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/gblc05c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:28:31</pubDate>
	<description><![CDATA[This SOD-323 packaged bidirectional ESD electrostatic protection diode is suitable for 5V systems and provides efficient bidirectional electrostatic protection. Its 1-channel design features an ultra-low junction capacitance of 0.6pF, ensuring excellent signal transparency on high-speed data lines. The peak pulse current IPP is up to 10A, which can effectively absorb and suppress ESD impacts, prevent sensitive electronic components from being damaged due to electrostatic discharge, and provide excellent protection solutions for modern high-density circuits.]]></description>
</item>
<item>
	<title><![CDATA[ESD5Z5V0(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd5z5v0-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:28:21</pubDate>
	<description><![CDATA[This SOD-523 packaged unidirectional ESD electrostatic protection diode is designed for efficient protection, with a rated voltage VRWM of 5V and a peak pulse current IPP of up to 9.4A. Equipped with 1 channel of excellent protection performance, the junction capacitance is as low as 80pF, ensuring non-destructive high-speed signal transmission and meeting the IEC 61000-4-2 standard, effectively preventing damage to electronic devices caused by electrostatic discharge.]]></description>
</item>
<item>
	<title><![CDATA[ESD5Z3V3(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd5z3v3-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:28:11</pubDate>
	<description><![CDATA[This SOD-523 packaged unidirectional ESD electrostatic protection diode provides excellent transient protection for 3.3V systems. Its 1-channel design can effectively suppress unidirectional electrostatic discharge, with a peak pulse current IPP of up to 11.2A, ensuring reliable operation even under high-intensity ESD impacts. The device‘s junction capacitance is as low as 105pF, which helps maintain signal quality and is particularly suitable for electrostatic protection needs of high-speed data interfaces. It is an ideal choice for modern electronic devices to resist ESD interference.]]></description>
</item>
<item>
	<title><![CDATA[SD03C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/sd03c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:28:01</pubDate>
	<description><![CDATA[This SOD-323 packaged bidirectional ESD electrostatic protection diode provides comprehensive protection for 3.3V systems. Equipped with excellent bidirectional transient suppression capability, with a peak pulse current IPP of up to 38A, ensuring safety in extreme ESD events. The 1-channel design, with a junction capacitance as low as 450pF, effectively balances high-speed signal integrity and excellent electrostatic discharge protection performance, making it an ideal choice for modern sensitive electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[CESDBLC5V0D3(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/cesdblc5v0d3-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:27:51</pubDate>
	<description><![CDATA[This SOD-323 packaged bidirectional ESD electrostatic protection diode is designed to provide high-level protection for 5V systems, with a 1-channel design that can efficiently withstand forward and reverse transient ESD impacts. Its peak pulse current IPP is as high as 11A, indicating that the device has strong resistance and dissipation ability when subjected to electrostatic discharge. At the same time, having a junction capacitance as low as 20pF ensures good signal integrity on high-speed data transmission interfaces, making it an ideal ESD protection solution for high integration circuits.]]></description>
</item>
<item>
	<title><![CDATA[7905(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/7905-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:04:42</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HCJT1117B-3.3(SOT-223)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hcjt1117b-3-3-sot-223-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:04:34</pubDate>
	<description><![CDATA[This LDO linear regulator adopts a compact SOT-223 package, with a constant output voltage of 15V (Vout), and can efficiently provide up to 1A current (Iout). Supporting a maximum input voltage of 18V (Vin (Max)), ensuring stable and reliable operation within a limited voltage range, it is an ideal power solution for various high current demand electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[7812(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/7812-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:04:25</pubDate>
	<description><![CDATA[This LDO linear regulator adopts an efficient TO-252-2L package, providing a stable 12V output voltage (Vout) and a current of up to 0.5A (Iout), ensuring stable power supply for the equipment. The maximum input voltage is 35V (Vin (Max)), suitable for wide voltage range applications, and is the ideal choice for various medium to high power electronic device power solutions.]]></description>
</item>
<item>
	<title><![CDATA[L7805CDT(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/l7805cdt-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:02:13</pubDate>
	<description><![CDATA[This high-performance LDO linear regulator is packaged in TO-252-2L, accurately outputting 16V voltage (Vout) and providing a stable 0.5A current (Iout). Supports a maximum input voltage of up to 35V (Vin (Max)), ensuring stable operation over a wide voltage range, especially suitable for medium power electronic devices that require high power supply stability.]]></description>
</item>
<item>
	<title><![CDATA[AMS1117CD-3.3(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ams1117cd-3-3-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:02:04</pubDate>
	<description><![CDATA[This LDO linear regulator adopts an efficient TO-252-2L package, providing a stable 17V output voltage (Vout) and up to 1A current (Iout) to meet high current requirements. The maximum input voltage is 18V (Vin (Max)), suitable for electronic devices that require efficient and stable power conversion within a limited voltage range.]]></description>
</item>
<item>
	<title><![CDATA[78M12(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/78m12-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:01:55</pubDate>
	<description><![CDATA[This LDO linear regulator adopts an industrial grade TO-252-2L package, with a stable output voltage of 14V (Vout) and a maximum current of 0.5A (Iout). Supports up to 35V input voltage (Vin (Max)), ensuring efficient and stable operation over a wide voltage range, especially suitable for medium to high power electronic devices with strict power requirements.]]></description>
</item>
<item>
	<title><![CDATA[78M09(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/78m09-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:01:47</pubDate>
	<description><![CDATA[This LDO linear regulator adopts a high-performance TO-252-2L package, which accurately outputs 13V voltage (Vout) and can continuously provide 0.5A current (Iout). Featuring a maximum input voltage of up to 35V (Vin (Max)), it ensures stable and efficient operation over a wide voltage range, making it particularly suitable for precision power management needs of mid to high power electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[MIC29302WU(TO-263-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mic29302wu-to-263-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 02:01:38</pubDate>
	<description><![CDATA[This high-performance LDO linear regulator adopts TO-263-5L packaging, providing adjustable output voltage (Vout) of 1.25 to 25V and up to 3A current (Iout), flexibly meeting various voltage requirements. The maximum input voltage is 26V (Vin (Max)), ensuring stable operation within a large current and wide voltage range, suitable for various high-end power management application scenarios.]]></description>
</item>
<item>
	<title><![CDATA[PC817C(DIP-4)]]></title>
	<category domain="http://www.hxymos.com/en/optocoupler-phototransistor-output/">Optocoupler</category>
	<link><![CDATA[http://www.hxymos.com/en/optocoupler-phototransistor-output/pc817c-dip-4-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 01:43:20</pubDate>
	<description><![CDATA[This SMD-4 packaged optocoupler adopts a phototransistor output design, providing excellent electrical isolation performance. Its forward voltage is as low as 1.2V, optimized for high-efficiency DC input applications, and has a stable output current capacity of 50mA. Meanwhile, the high reverse voltage of 6V ensures the reliability and stability of the device in various working environments, making it suitable for various application scenarios such as power conversion and signal isolation.]]></description>
</item>
<item>
	<title><![CDATA[BT136S(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/thyristor/">Thyristor</category>
	<link><![CDATA[http://www.hxymos.com/en/thyristor/bt136s-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 12:57:24</pubDate>
	<description><![CDATA[This bidirectional thyristor module, packaged in TO-252-2L, is designed for efficient control of AC power. Has excellent surge current processing ability, up to 25A (@ f), ensuring stable operation of the equipment during startup or switching. The average dissipation power of the gate is 0.5W, effectively reducing losses and improving reliability. The on state RMS current capacity of 3A makes it suitable for various medium and low power AC dimming, temperature control, and motor drive applications.]]></description>
</item>
<item>
	<title><![CDATA[GBU808(GBU)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/gbu808-gbu-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 11:26:03</pubDate>
	<description><![CDATA[This GBU packaged rectifier bridge device is designed specifically for high-performance electronic systems. Its outstanding performance is reflected in its 800V DC reverse withstand voltage and 8A average rectified current, ensuring stable operation in high voltage and high current environments. The forward pressure decreases to 1.1V@8A Effectively reducing power consumption and improving system efficiency. And the reverse current is only 5uA@800V It exhibits excellent blocking performance and is suitable for various application scenarios that require high-quality semiconductor devices.]]></description>
</item>
<item>
	<title><![CDATA[MB10S(MBS)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/mb10s-mbs-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 11:25:56</pubDate>
	<description><![CDATA[This MBS packaged rectifier bridge device has a high DC reverse voltage withstand performance of 1000V, which can effectively meet the circuit protection requirements in high-voltage environments. Its average rectification current is 0.8A, which meets the current processing requirements of medium and low power equipment. At a working current of 0.4A, the forward voltage drop is only 1V, ensuring lower energy loss and higher work efficiency. Meanwhile, the reverse current is controlled within 5uA@1000V It demonstrates excellent insulation characteristics and is an ideal choice for various stable and efficient rectification solutions.]]></description>
</item>
<item>
	<title><![CDATA[MJD122(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/darlington-transistor-array/">Darlington</category>
	<link><![CDATA[http://www.hxymos.com/en/darlington-transistor-array/mjd122-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 11:21:11</pubDate>
	<description><![CDATA[This NPN type Darlington bipolar power transistor is packaged in TO-252-2L, making it particularly suitable for general amplifier construction and low-speed switching applications. It has a maximum collector breakdown voltage of 100V (Vceo) and a continuous collector current of up to 8A (Ic), with excellent power dissipation capacity of 1.5W. The device performs excellently in its working state, with a saturation voltage VCE (sat) of only 4V@8A /80mA and provides a wide range of DC current gain, with hFE ranging from 1000 to 12000 at 4A collector current and 4V collector emitter voltage. In addition, the transistor has an ultra-low reverse saturation current Icbo of 10uA, ensuring higher circuit stability and lower power consumption. Excellent performance makes it an ideal solution for high efficiency and high current control.]]></description>
</item>
<item>
	<title><![CDATA[MJD127T4G(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/darlington-transistor-array/">Darlington</category>
	<link><![CDATA[http://www.hxymos.com/en/darlington-transistor-array/mjd127t4g-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 11:21:03</pubDate>
	<description><![CDATA[This Darlington transistor adopts TO-252-2L packaging and is a high-performance PNP bipolar power transistor. Has a collector breakdown voltage of 100V (Vceo) and a maximum collector current of 8A (Ic), with a rated power dissipation of 1.5W. It has an ultra-low saturation voltage, with a VCE (sat) of only 4V at 8A collector current and 80mA base current, ensuring efficient operation. In addition, the device provides excellent DC current gain under 4A/4V conditions, with an hFE range between 1000 and 12000. Suitable for general amplifier design and low-speed switching applications, with its excellent electrical parameters and stability performance, it meets the needs of various medium to high power circuits.]]></description>
</item>
<item>
	<title><![CDATA[DTC143ZCA(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/digital-transistor/">Digital transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/digital-transistor/dtc143zca-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 11:17:58</pubDate>
	<description><![CDATA[This NPN type digital transistor adopts a compact SOT-23 package, designed specifically for modern electronic devices with low power consumption and high integration. The device has a maximum collector emitter voltage of 50V (Vcc) and a continuous output current of 0.1A (Io), with power consumption controlled within 0.2W, ensuring excellent energy efficiency performance. The uniqueness lies in the built-in precision resistor network, where R1 resistance is set to 4.7 Ω and has an R2 resistance value 10 times that of R1 (R1/R2=10), which helps simplify circuit configuration and improve system stability. This transistor is suitable for various digital applications such as logic gate circuits and signal processing, and is an ideal choice for achieving miniaturization, high efficiency, and energy-saving circuits.]]></description>
</item>
<item>
	<title><![CDATA[UMH3N(SOT-363)]]></title>
	<category domain="http://www.hxymos.com/en/digital-transistor/">Digital transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/digital-transistor/umh3n-sot-363-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 11:17:50</pubDate>
	<description><![CDATA[This digital transistor adopts advanced SOT-363 packaging and is equipped with a pair of complementary NPN type transistors. The device provides a collector breakdown voltage of 50V (Vceo) and a maximum collector current of 0.1A (Ic), with a power dissipation capacity of 150mW. Its excellent low saturation voltage characteristics result in a VCE (sat) of only 300mV at a collector current of 5mA and a base current of 0.25mA, while also having excellent DC current gain. The hFE can reach a range of 100 to 600 under 1mA/5V conditions. In addition, the transistor has a cutoff frequency (fT) of up to 250MHz, ensuring high-speed switching performance. Suitable for various low-power, high-speed digital circuit designs, such as logic gate circuits, signal amplifiers, and other application scenarios, with its compact size and superior electrical performance to meet the precision requirements of modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[DTC123YCA(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/digital-transistor/">Digital transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/digital-transistor/dtc123yca-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 11:17:43</pubDate>
	<description><![CDATA[This NPN type digital transistor adopts a miniaturized SOT-23 package, specifically designed for efficient and low-power electronic designs. The device supports a maximum collector emitter voltage of 50V (Vcc), has a continuous output current capability of 0.1A (Io), and a power consumption of only 0.2W, ensuring excellent performance in a compact space. The uniqueness lies in the integration of a precise resistance network, where the R1 resistance is set to 2.2 Ω and has a proportional relationship of about 4.5 times that of R1 (R1/R2=4.5), greatly simplifying circuit design and improving system stability. Suitable for various digital application fields such as logic gate circuits and signal switching, it is one of the indispensable core components in modern miniaturized electronic products.]]></description>
</item>
<item>
	<title><![CDATA[DTC143ECA(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/digital-transistor/">Digital transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/digital-transistor/dtc143eca-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 11:17:36</pubDate>
	<description><![CDATA[This NPN type digital transistor adopts a compact SOT-23 package, designed specifically for modern electronic devices with low power consumption and high integration. The device has a maximum collector emitter voltage of 50V (Vcc) and a continuous output current of 0.1A (Io), with power consumption controlled within 0.2W, ensuring excellent energy efficiency performance. The uniqueness lies in the built-in precision resistor network, where R1 resistance is set to 4.7 Ω and has an R2 resistance value 10 times that of R1 (R1/R2=10), which helps simplify circuit configuration and improve system stability. This transistor is suitable for various digital applications such as logic gate circuits and signal processing, and is an ideal choice for achieving miniaturization, high efficiency, and energy-saving circuits.]]></description>
</item>
<item>
	<title><![CDATA[DTC143ZE(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/digital-transistor/">Digital transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/digital-transistor/dtc143ze-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 11:17:29</pubDate>
	<description><![CDATA[This digital NPN transistor adopts advanced SOT-523 packaging technology, which is compact and suitable for high-density circuit design. Its working voltage is as high as 50V, continuous current is 0.1A, power dissipation can reach 0.15W, and it has excellent energy consumption control performance. Internally configured with a precision resistor network, R1 is 4.7 Ω, and R1/R2 ratio is 10, ensuring the stability and accuracy of the device in switching and amplification states, making it an ideal choice for various microelectronic devices.]]></description>
</item>
<item>
	<title><![CDATA[MAX809S(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max809s-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 10:49:56</pubDate>
	<description><![CDATA[This SOT-23 packaged voltage detector chip is designed specifically for system monitoring and reset functions, with a push-pull output structure. When the monitored single circuit voltage drops below the threshold of 2.93V, the chip will trigger a low-level effective reset signal to ensure a safe system restart. The compact SOT-23 package makes it an ideal choice for space limited applications, especially suitable for battery powered equipment and embedded systems that require precise voltage threshold monitoring to prevent voltage anomalies.]]></description>
</item>
<item>
	<title><![CDATA[MAX706CSA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max706csa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 10:49:49</pubDate>
	<description><![CDATA[This SOP-8 packaged monitoring and reset chip is designed specifically for system voltage monitoring and protection, suitable for power supply voltage ranges from 5V to 5.5V. This chip has a single voltage monitoring function. When the power supply voltage is below the preset threshold, it outputs a low-level effective reset signal to ensure safe system restart under abnormal conditions. Its compact packaging size and precise voltage monitoring performance make it an ideal matching component for various embedded systems and microprocessors.]]></description>
</item>
<item>
	<title><![CDATA[MAX706TCSA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max706tcsa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 10:49:42</pubDate>
	<description><![CDATA[This WS3202E61-6/TR monitoring reset chip adopts a compact SOP-8 package, designed specifically for precision power monitoring and system reset functions. The working voltage range is between 5V and 5.5V, ensuring reliable operation. Its core feature lies in a low-level effective reset signal. Once the monitored single power supply voltage falls below the preset threshold, it triggers a system reset, effectively ensuring the stable start and operation of the system. Suitable for various embedded applications that require strict voltage management.]]></description>
</item>
<item>
	<title><![CDATA[MAX706SCSA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max706scsa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 10:49:35</pubDate>
	<description><![CDATA[This SOP-8 packaged monitoring and reset integrated circuit is designed specifically for 5V to 5.5V power supply systems, providing critical voltage monitoring and protection functions. The chip is equipped with a precise voltage detector, which can monitor the voltage of a single power supply in real time and trigger a low-level effective reset signal when the voltage is below the preset threshold, ensuring stable system restart. Its compact packaging is suitable for various space limited application scenarios and is an ideal choice to ensure the safe operation of embedded devices and microprocessors.]]></description>
</item>
<item>
	<title><![CDATA[MAX706PCSA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max706pcsa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 10:49:28</pubDate>
	<description><![CDATA[This SOP-8 packaged monitoring reset IC is designed for 5V to 5.5V power supply systems and has a single voltage channel real-time monitoring function. Once the power supply voltage drops below the preset threshold, a low-level effective reset signal is immediately issued to ensure the safe restart of the target system and avoid instability or data loss caused by abnormal voltage. Suitable for scenarios that require precision voltage monitoring and protection, such as embedded applications and microcontrollers.]]></description>
</item>
<item>
	<title><![CDATA[MAX706RCSA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max706rcsa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 10:49:20</pubDate>
	<description><![CDATA[This SOP-8 packaged monitoring reset chip is suitable for 5V to 5.5V power supply systems and has a single voltage monitoring function. When the power supply voltage is below the preset threshold, the chip will quickly trigger a low-level effective reset signal, effectively ensuring that the system can restart in a timely manner in case of voltage abnormalities, ensuring stable equipment operation and data security. Specially suitable for various embedded design and microprocessor applications, providing precise and reliable voltage monitoring and protection solutions.]]></description>
</item>
<item>
	<title><![CDATA[MAX708SCSA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max708scsa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 10:49:13</pubDate>
	<description><![CDATA[This SOP-8 packaged monitoring reset chip is suitable for 5V to 5.5V power supply systems and has a single voltage monitoring function. When the power supply voltage drops abnormally, the chip immediately responds and outputs a low-level effective reset signal to ensure that the system restarts in a timely manner under unstable conditions, effectively preventing data loss and hardware damage. Its exquisite packaging design facilitates integration into various circuit board layouts, making it an ideal choice for high reliability applications such as embedded systems and microcontrollers.]]></description>
</item>
<item>
	<title><![CDATA[MAX708RCSA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max708rcsa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 10:49:06</pubDate>
	<description><![CDATA[This SOP-8 packaged monitoring reset chip is designed to provide reliable protection for 5V to 5.5V power systems. Its core function is single voltage channel monitoring. When the power supply voltage is below the set threshold, it outputs a low-level effective reset signal and restarts the system in a timely manner to avoid potential faults. Precision design ensures critical performance in various embedded applications, particularly suitable for microprocessors and electronic devices that require stable operating environments.]]></description>
</item>
<item>
	<title><![CDATA[MAX708CSA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max708csa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-24 10:39:52</pubDate>
	<description><![CDATA[This SOP-8 packaged monitoring reset chip is designed specifically for 5V to 5.5V power supply systems, providing critical voltage monitoring protection. It accurately detects a single voltage channel and quickly outputs a low-level effective reset signal when voltage drops, ensuring that the system can restart in a timely manner in unstable states, preventing potential faults and data loss. Compact packaging and efficient performance make it an ideal choice for various embedded devices and microprocessor systems.]]></description>
</item>
<item>
	<title><![CDATA[AO3407A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3407a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:52:13</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET features a compact SOT-23 package designed specifically for efficient power management and load switching applications. The rated voltage can reach up to 30V and the continuous current can reach 4.1A, making it an ideal choice for low voltage and high current solutions, suitable for circuit control of various portable and space limited electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[2SK3018W(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/2sk3018w-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:52:04</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts SOT-323 packaging, with N-channel characteristics, rated voltage up to 30V, current capacity of 0.1A, suitable for various small electronic devices, providing efficient and stable switching and power conversion performance.]]></description>
</item>
<item>
	<title><![CDATA[1N60G(SOT-223)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/1n60g-sot-223-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:51:54</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts SOT-223 packaging, with N-channel characteristics, high voltage resistance of 600V, and continuous current processing capacity of 1A. It is suitable for various medium and high voltage electronic devices, providing excellent switching performance and low loss]]></description>
</item>
<item>
	<title><![CDATA[IRF740(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf740-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:51:45</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts the classic TO-220 packaging, designed specifically for handling high voltage and high current applications. Equipped with a breakdown voltage of 400V and 11A continuous current capability, suitable for various power conversion, motor drive, and switch control scenarios, providing excellent energy efficiency performance, it is your ideal choice for efficient and reliable power management.]]></description>
</item>
<item>
	<title><![CDATA[10N65(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/10n65-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:51:35</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts TO-252-2L packaging, designed specifically for handling high voltage and medium current applications. With an excellent breakdown voltage of 650V and a continuous working current of 10A, it is particularly suitable for high-voltage switching circuits, power converters, and inverter systems, providing efficient and reliable power management solutions, making it your ideal choice to improve the performance of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[1N65G(SOT-223)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/1n65g-sot-223-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:51:26</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts a compact SOT-223 package with an integrated N-channel structure, which has excellent withstand voltage performance (650V) and continuous current carrying capacity (1A), especially suitable for various high-voltage and low-power application scenarios]]></description>
</item>
<item>
	<title><![CDATA[AO4409(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4409-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:51:16</pubDate>
	<description><![CDATA[This high-performance P-channel consumer grade MOSFET features a compact SOP-8 package designed specifically for efficient power conversion and high current switching applications. The device provides a rated voltage of 30V and a continuous current processing capacity of up to 15A, suitable for power management, load switching, and other applications in compact electronic devices, achieving excellent system energy efficiency and reliability.]]></description>
</item>
<item>
	<title><![CDATA[AO8814(TSSOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao8814-tssop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:51:07</pubDate>
	<description><![CDATA[This dual N-channel consumer grade MOSFET features a compact TSSOP-8 package, suitable for efficient power conversion and load switching applications. The rated voltage of the device is 20V, and each channel can carry up to 7.5A current, providing low on resistance and excellent performance, making it particularly suitable for electronic device designs with limited space and high performance requirements.]]></description>
</item>
<item>
	<title><![CDATA[AO8810(TSSOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao8810-tssop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:50:57</pubDate>
	<description><![CDATA[This dual N-channel consumer grade MOSFET features a space saving TSSOP-8 package designed specifically for high-performance circuits. With a rated voltage of 20V and a single channel 7A continuous current carrying capacity, it is suitable for DC-DC conversion, low-voltage power switching, and load control applications, providing low conduction resistance and excellent performance. It is an ideal power management component for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[CMD5950(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/cmd5950-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:50:48</pubDate>
	<description><![CDATA[This P-channel consumer grade MOSFET adopts TO-252-2L packaging, specially optimized for high voltage and high current applications. With a rated voltage of 100V and a continuous working current of 30A, it is suitable for various power switches, inverters, and efficient power conversion scenarios, providing excellent conductivity and energy efficiency, making it an ideal component choice for high-performance electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BSC039N06NS(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc039n06ns-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:50:38</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts DFN5X6-8L packaging, with 60V high voltage resistance and excellent 125A high current processing ability. Specially designed for high-performance, low resistance switch applications, widely used in various consumer electronics products, achieving a perfect combination of high efficiency and compact space utilization.]]></description>
</item>
<item>
	<title><![CDATA[BSC028N06NS(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc028n06ns-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:50:28</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET features a compact DFN5X6-8L package with powerful 125A continuous current capability and 60V rated voltage, designed specifically for high-density, high current applications. Suitable for efficient power conversion, battery management systems, and motor drive scenarios, providing excellent switching performance and energy efficiency, it is an ideal core component for modern high-performance electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BSC0702LSATMA1(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc0702lsatma1-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:50:19</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts advanced DFN5X6-8L packaging, with efficient N-channel design, rated voltage up to 60V, and current capacity up to 125A. It is specially designed for various high-power applications, providing excellent switching performance and low conduction resistance, making it the ideal choice for your electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[BSC0702LS(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc0702ls-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:50:09</pubDate>
	<description><![CDATA[This high-performance N-channel consumer grade MOSFET features a compact DFN5X6-8L package, designed specifically for handling high voltage and high current applications. The device has a rated voltage of 60V and a continuous current capacity of up to 125A, especially suitable for battery management systems, power converters, and high-power motor drives, providing excellent conductivity and heat dissipation efficiency. It is a core component of modern high-efficiency electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BSS214NH6327(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss214nh6327-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:50:00</pubDate>
	<description><![CDATA[This compact N-channel MOSFET adopts SOT-23 packaging and is designed specifically for low voltage, medium current applications in consumer electronics. Rated voltage of 20V, maximum continuous current of 3A, suitable for power management, load switching, and power path control of mobile devices. With low on resistance and high efficiency, it is an ideal choice for small electronic circuits.]]></description>
</item>
<item>
	<title><![CDATA[IRF7476PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7476pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:49:50</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts standard SOP-8 packaging and is designed specifically for high current applications. Rated voltage of 20V, with strong 20A continuous current processing capability, it is an ideal choice for power conversion, motor drive, and load switching. This device is widely used in various consumer electronics products due to its excellent conductivity and efficient performance in compact spaces.]]></description>
</item>
<item>
	<title><![CDATA[IRLML2244TRPBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml2244trpbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:49:40</pubDate>
	<description><![CDATA[This P-channel consumer grade MOSFET adopts a compact SOT-23 package, designed specifically for efficient power switching and load control. The device has a rated voltage of 20V and a continuous current carrying capacity of up to 5A, especially suitable for applications such as battery powered equipment, small inverters, and DC-DC conversion. It provides excellent low conductivity resistance performance and is an ideal power management component in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRFH9310TRPBF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfh9310trpbf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:49:31</pubDate>
	<description><![CDATA[This high-performance P-channel consumer grade MOSFET features an ultra compact DFN5X6-8L package, designed specifically for high power density and high current applications. The device has a rated voltage of 30V and can withstand continuous currents of up to 90A. It is suitable for efficient power switches, battery management systems, and high current load switching scenarios, providing excellent energy efficiency and heat dissipation performance. It is an ideal core component of modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRFHM9331TRPBF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfhm9331trpbf-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:49:21</pubDate>
	<description><![CDATA[This field-effect transistor has a current carrying capacity of 40A and a working voltage of 30V, with a typical internal resistance of 13m Ω, making it suitable for high-performance applications. Its P-type design ensures good current conduction performance, with a VGS of 20V. Suitable for various scenarios such as power management, ensuring stable system operation.]]></description>
</item>
<item>
	<title><![CDATA[IRFS4310ZTRLPBF(TO-263)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfs4310ztrlpbf-to-263-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:49:12</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts TO-263 packaging, designed specifically for handling high current and high-power applications. Equipped with a rated voltage of 100V and an amazing continuous working current of 260A, it is particularly suitable for motor drives, power converters, and high-power switching circuits, providing excellent conductivity and heat dissipation efficiency. It is an indispensable core component of large-scale industrial grade electronic equipment and high-end consumer electronics products.]]></description>
</item>
<item>
	<title><![CDATA[IRFB4410ZPBF(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfb4410zpbf-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:49:02</pubDate>
	<description><![CDATA[This TO-220 packaged N-channel consumer grade MOSFET is designed specifically for handling high voltage and high current application scenarios. Rated voltage of 100V, capable of carrying 70A continuous current, suitable for power converters, motor drives, and various high-voltage load switch applications, providing low conduction resistance and excellent heat dissipation performance, making it an ideal power semiconductor device for building high-performance electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[IRLML2246TRPBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml2246trpbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:48:53</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a small SOT-23 package, designed specifically for portable and space limited high-efficiency circuits. The device provides a rated voltage of 20V and a continuous current carrying capacity of up to 2.3A. It has low on resistance characteristics and is suitable for power path control of power switches, battery management systems, and various mobile devices, achieving excellent energy efficiency and reliability.]]></description>
</item>
<item>
	<title><![CDATA[IRF7205PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7205pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:48:43</pubDate>
	<description><![CDATA[This SOP-8 packaged P-channel consumer grade MOSFET is specifically designed for efficient switching and power management applications at 30V voltage. With a continuous current processing capability of 5.8A, suitable for medium power load switching, battery protection circuits, and power conversion scenarios of various electronic devices, it has excellent conductivity and low loss characteristics]]></description>
</item>
<item>
	<title><![CDATA[BSC050NE2LS(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc050ne2ls-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:48:33</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts an ultra small DFN5X6-8L package, specially designed for high-efficiency and high current applications. Equipped with a rated voltage of 30V and a continuous current carrying capacity of up to 80A, suitable for power converters, battery management systems, and motor drives, providing excellent conductivity and low thermal resistance performance, it is an ideal power switching solution for modern compact electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IPG20N06S4L-26(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ipg20n06s4l-26-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:48:23</pubDate>
	<description><![CDATA[This dual N-channel consumer grade MOSFET features a compact DFN5X6-8L package, designed specifically for high power density and high current applications. With a rated voltage of 60V and a single channel continuous current capacity of up to 50A, it is particularly suitable for efficient power conversion, electric bicycle battery management systems, and motor drive scenarios, providing excellent energy efficiency performance and reliable switching performance.]]></description>
</item>
<item>
	<title><![CDATA[BSC160N10NS3G(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc160n10ns3g-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:48:14</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET is designed in a DFN5X6-8L package, specifically for high power density applications. Rated voltage of 100V, capable of carrying up to 75A continuous current, suitable for power conversion, battery management systems, and high current switching scenarios, providing excellent conductivity and thermal management efficiency. It is an ideal high-performance semiconductor component for modern compact electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BSC109N10NS3G(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc109n10ns3g-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:48:05</pubDate>
	<description><![CDATA[Product Description: This consumer grade N-channel MOSFET adopts advanced DFN5X6-8L packaging, with excellent 100V voltage tolerance and continuous current processing capacity of up to 75A. It is designed specifically for high-power and high-efficiency electronic devices, providing excellent switching performance and low conduction resistance to help improve the overall efficiency of the system.]]></description>
</item>
<item>
	<title><![CDATA[BSS205NH6327(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss205nh6327-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:47:55</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET features a small SOT-23 package designed specifically for low voltage, medium current applications. Rated breakdown voltage of 20V, capable of stably carrying 2.8A continuous current, especially suitable for portable devices, power management modules, and load switching circuits, providing excellent conductivity and low power consumption performance, making it an ideal integrated component for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IPD90P03P4L-04(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ipd90p03p4l-04-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:47:45</pubDate>
	<description><![CDATA[This TO-252-2L packaged P-channel consumer grade MOSFET is designed specifically for high current applications. Equipped with a rated voltage of 30V and a continuous current carrying capacity of up to 120A, it is particularly suitable for power conversion, battery management systems, and high-power switching circuits, providing excellent energy efficiency and heat dissipation performance. It is an ideal component for modern electronic devices to achieve efficient power control.]]></description>
</item>
<item>
	<title><![CDATA[IRFR7546TRPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr7546trpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:47:36</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET is designed in a TO-252-2L package specifically for high current applications. With a rated voltage of 60V and a continuous current carrying capacity of up to 80A, it is particularly suitable for power conversion, battery management systems, and high-power switching circuits. It provides low conduction resistance and high performance, making it an ideal choice for modern electronic devices to achieve excellent power control.]]></description>
</item>
<item>
	<title><![CDATA[AUIRFR3504Z(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/auirfr3504z-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:47:26</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts a TO-252-2L package, designed specifically for handling medium to high voltage and high current applications. The device has a rated voltage of 40V and can withstand continuous currents of up to 60A. It is particularly suitable for power converters, battery management systems, and motor drives, providing excellent conductivity and efficient heat dissipation. It is an ideal component for building high-performance power control systems in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRF7420TRPBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7420trpbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:47:17</pubDate>
	<description><![CDATA[This P-channel consumer grade MOSFET adopts SOP-8 packaging, optimized for high current applications at 20V voltage. Providing up to 20A continuous current processing capability, suitable for power conversion, load switching, and battery management systems, with low on resistance and high reliability, it is an ideal solution for efficient power management in modern consumer electronics devices.]]></description>
</item>
<item>
	<title><![CDATA[IRF7404PBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7404pbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:47:07</pubDate>
	<description><![CDATA[This SOP-8 packaged P-channel consumer grade MOSFET is designed specifically for high-performance, high current applications. Rated voltage of 20V, capable of carrying up to 20A continuous current, suitable for power switches, battery protection circuits, and medium power load conversion scenarios, providing low conduction resistance and excellent thermal stability, making it an ideal power management device for various modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRF9956TRPBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf9956trpbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:46:58</pubDate>
	<description><![CDATA[This SOP-8 packaged dual N-channel consumer grade MOSFET is designed for medium voltage and high efficiency applications. Rated voltage of 30V, each channel can carry up to 8.5A continuous current, suitable for power conversion, load sharing, and battery management systems, providing low conduction resistance and excellent thermal performance, making it an ideal dual channel power switching device in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRF7313TRPBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7313trpbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:46:48</pubDate>
	<description><![CDATA[This SOP-8 packaged dual N-channel consumer grade MOSFET is designed specifically for medium to high current applications at 30V voltage. The maximum continuous current of each channel can reach 8.5A, suitable for power conversion, load switching, and battery management systems. It has low conduction resistance and high performance, making it an ideal dual channel solution for modern electronic devices to achieve precise power control.]]></description>
</item>
<item>
	<title><![CDATA[IPD25DP06NM(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ipd25dp06nm-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:46:39</pubDate>
	<description><![CDATA[This TO-252-2L packaged P-channel consumer grade MOSFET is designed specifically for medium voltage, high current applications. The device has a rated voltage of 60V and a continuous current processing capacity of 10A, suitable for power conversion, load switching, and battery management systems, providing excellent conductivity and low loss characteristics. It is an ideal solution for efficient power management in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IPD40DP06NMATMA1(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ipd40dp06nmatma1-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:46:29</pubDate>
	<description><![CDATA[This TO-252-2L packaged P-channel consumer grade MOSFET is designed specifically for medium voltage and high current applications. With a rated voltage of 60V and a continuous current carrying capacity of up to 10A, it is suitable for power conversion, load switching, and battery management systems. It has low conduction resistance and superior thermal performance, making it an ideal choice for efficient power control in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRFR3410TRPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr3410trpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:46:20</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET is designed in a TO-252-2L package for medium to high voltage and high current applications. Rated breakdown voltage of 100V, continuous current carrying capacity of up to 30A, especially suitable for power converters, motor drives, and load switching applications, providing excellent conductivity and energy efficiency performance, making it an ideal power semiconductor device choice for building high-performance electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[IRFR3411TRPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr3411trpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:46:10</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET is designed in a TO-252-2L package specifically for high current applications. Rated voltage of 100V, capable of carrying up to 30A continuous current, suitable for power conversion, motor drive, and battery management systems, with low conduction resistance and excellent heat dissipation performance, it is an ideal power semiconductor device choice for building high-performance electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRF7104TRPBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7104trpbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:46:00</pubDate>
	<description><![CDATA[This SOP-8 packaged dual P-channel consumer grade MOSFET is designed specifically for low voltage, medium current applications. Rated voltage of 20V, each channel can carry up to 4A continuous current, suitable for power conversion, battery protection, and load switching control. It has low conduction resistance and excellent parallel performance, making it an ideal dual channel power switching device for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BSZ050N03LS G(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsz050n03ls-g-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:45:51</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET features an extremely compact DFN3X3-8L package designed specifically for high current applications. Rated voltage of 30V, capable of carrying up to 100A continuous current, especially suitable for power conversion, battery management systems, and high-power density systems. With excellent conductivity and efficient heat dissipation technology, it is an ideal choice for modern electronic devices to achieve miniaturization and high performance.]]></description>
</item>
<item>
	<title><![CDATA[IRFH3702TRPBF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfh3702trpbf-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:45:41</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET features an ultra small DFN3X3-8L package, designed specifically for high-power density applications. With a rated voltage of 30V and a continuous current processing capacity of 60A, it is particularly suitable for power conversion, battery management systems, and compact high current devices. It provides excellent conductivity and heat dissipation efficiency, making it an ideal solution for efficient power control in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BSS314PEH6327(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss314peh6327-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:45:32</pubDate>
	<description><![CDATA[This P-channel consumer grade MOSFET adopts SOT-23 packaging, suitable for efficient power conversion and load control in a 30V voltage environment. The device provides 4.1A continuous current processing capability and has low on resistance characteristics, making it particularly suitable for battery management systems in portable devices. It is an ideal semiconductor component for achieving energy conservation and reliable power management.]]></description>
</item>
<item>
	<title><![CDATA[IRLML9303TRPBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml9303trpbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:45:22</pubDate>
	<description><![CDATA[This P-channel consumer grade MOSFET adopts SOT-23 packaging and is suitable for medium power applications at 30V voltage. Providing 4.1A continuous current processing capability, particularly optimized for power conversion, load switching, and battery management systems, with low on resistance and excellent thermal performance, it is an ideal power control component for modern portable and compact electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRLML9301TRPBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml9301trpbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:45:13</pubDate>
	<description><![CDATA[This SOT-23 package P-channel consumer grade MOSFET is designed for high efficiency, medium current applications. With a rated voltage of 30V and a continuous current processing capability of 4.1A, it is widely used in power conversion, load switching, and power control modules of portable electronic devices. It provides low conduction resistance and excellent thermal performance, making it an indispensable core semiconductor component in modern electronic products.]]></description>
</item>
<item>
	<title><![CDATA[BSS306NH6327(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss306nh6327-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:45:03</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts a compact SOT-23 package, designed specifically for high-efficiency, medium current applications at 30V voltage. Equipped with 5A continuous current processing capability, widely used in power conversion, load switching, and power management modules for portable devices, providing low conduction resistance and excellent heat dissipation performance, it is an ideal integrated component for modern electronic products.]]></description>
</item>
<item>
	<title><![CDATA[IRFML8244TRPBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfml8244trpbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:44:54</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts SOT-23 packaging, designed specifically for high-efficiency, medium to high current applications. With a rated voltage of 30V and a continuous current carrying capacity of up to 5.8A, it is particularly suitable for power conversion, load switching, and battery management systems. It has low on resistance and excellent thermal performance, making it an ideal power control component for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRLML6246TRPBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml6246trpbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:44:44</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts a compact SOT-23 package, designed specifically for high-efficiency, medium to high current applications. Rated voltage of 20V, capable of carrying up to 6A continuous current, suitable for power conversion, load switching, and battery management systems, providing low conduction resistance and excellent thermal stability. It is an ideal semiconductor component for modern electronic devices to achieve precise power control.]]></description>
</item>
<item>
	<title><![CDATA[IRFH8318PBF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfh8318pbf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:44:35</pubDate>
	<description><![CDATA[This high-performance N-channel consumer grade MOSFET features a compact DFN5X6-8L package designed specifically for high current applications. With a rated voltage of 30V and a strong continuous current carrying capacity of 150A, it is suitable for power conversion, battery management systems, and high-power switching applications, providing excellent conductivity and heat dissipation. It is an ideal choice for modern electronic devices to achieve efficient power management.]]></description>
</item>
<item>
	<title><![CDATA[BSC025N03MS G(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc025n03ms-g-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:44:25</pubDate>
	<description><![CDATA[This high-performance N-channel consumer grade MOSFET is designed in a DFN5X6-8L package specifically for high current applications. Rated voltage of 30V, peak continuous current of up to 150A, especially suitable for power conversion, battery management systems, and high-power switching scenarios, providing excellent conductivity and efficient heat dissipation, making it an ideal choice for compact electronic devices to achieve ultra strong power control.]]></description>
</item>
<item>
	<title><![CDATA[IRFH5302TRPBF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfh5302trpbf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:44:16</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts a compact DFN5X6-8L package, optimized for high current applications. Rated voltage of 30V, capable of carrying up to 150A continuous current, especially suitable for power conversion, battery management systems, and high-power switching circuits. With excellent conductivity and heat dissipation design, it is an ideal choice for modern electronic devices to achieve efficient power management.]]></description>
</item>
<item>
	<title><![CDATA[BSC0902NS(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc0902ns-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:44:06</pubDate>
	<description><![CDATA[This high-performance N-channel consumer grade MOSFET is designed in a DFN5X6-8L package specifically for high current applications. With a rated voltage of 30V and a maximum continuous current of 150A, it is particularly suitable for power conversion, battery management systems, and high-power switching circuits. It has excellent conductivity and thermal stability, making it an ideal component for modern compact electronic devices to achieve efficient power control.]]></description>
</item>
<item>
	<title><![CDATA[BSC026NE2LS5(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc026ne2ls5-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:43:57</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET features a compact DFN5X6-8L package designed specifically for high current applications. With a rated voltage of 30V and a continuous current carrying capacity of up to 150A, it is widely used in power conversion, battery management systems, and high-power electronic devices, providing excellent conduction efficiency and excellent heat dissipation performance. It is a key semiconductor component of modern high-efficiency systems.]]></description>
</item>
<item>
	<title><![CDATA[IRFR3910TRPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr3910trpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:43:48</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET is packaged in TO-252-2L, specifically designed for medium to high voltage and high current applications. Rated voltage of 100V, capable of carrying 20A continuous current, suitable for power conversion, motor drive, and battery management systems, with low conduction resistance and good heat dissipation performance, it is an ideal semiconductor component for efficient power control in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BSC042N03LSG(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc042n03lsg-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:43:38</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts DFN5X6-8L packaging, designed specifically for high current applications. Rated voltage of 30V, providing up to 120A continuous current processing capability, suitable for power conversion, battery management systems, and high-power switching circuits. With low conduction resistance and excellent heat dissipation performance, it is an ideal choice for modern electronic devices to achieve efficient power management.]]></description>
</item>
<item>
	<title><![CDATA[BSC042N03MS G(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc042n03ms-g-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:43:29</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts DFN5X6-8L packaging, designed specifically for high current applications. With a rated voltage of 30V and a continuous current carrying capacity of up to 120A, it is particularly suitable for power conversion, battery management systems, and high-power electronic devices. It provides excellent conductivity and efficient heat dissipation solutions, making it an ideal high-performance semiconductor component for modern compact systems.]]></description>
</item>
<item>
	<title><![CDATA[IRLR2905PBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlr2905pbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:43:19</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET is designed in a TO-252-2L package specifically for handling high voltage and high current applications. Rated withstand voltage of 60V, capable of carrying 30A continuous current, suitable for power conversion, motor drive, and battery management systems. It has low conduction resistance and good heat dissipation performance, making it an ideal choice for efficient power control in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BSZ130N03LS G(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsz130n03ls-g-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:43:10</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts DFN3X3-8L packaging, designed specifically for high power density and medium to high current applications. Rated voltage of 30V, capable of carrying 30A continuous current, especially suitable for power conversion, battery management systems, and compact electronic devices, providing excellent conductivity and efficient heat dissipation, making it an ideal power switching device for modern electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[BSS806NH6327(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss806nh6327-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:43:00</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts SOT-23 small package, suitable for low voltage and medium current applications. Rated breakdown voltage of 20V, capable of stably handling 3A continuous current, commonly used in power conversion, load switching, and battery management systems, with low conduction resistance, it is an ideal high-efficiency power control component for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BSS806NEH6327(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss806neh6327-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:42:51</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts SOT-23 packaging and is designed specifically for low voltage, medium current applications. Rated withstand voltage of 20V, supporting 3A continuous current processing capability, suitable for power conversion, load switch control, and battery management systems, with low conduction resistance and high performance, it is a high-quality power management component for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRLML2030TRPBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml2030trpbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:42:42</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts SOT-23 packaging and is designed specifically for high-efficiency, medium current applications. Rated voltage of 30V, providing a continuous current processing capacity of 5.8A, especially suitable for power conversion, load switching, and battery management systems. It has low conduction resistance and excellent thermal performance, making it an ideal power management component for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRF7343TRPBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7343trpbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:42:32</pubDate>
	<description><![CDATA[This N+P channel consumer grade MOSFET adopts SOP-8 packaging and is designed specifically for bidirectional voltage applications. Rated withstand voltage of 60V, single channel capable of carrying 6A continuous current, suitable for efficient power conversion, load switching, and battery management systems, providing excellent conductivity and low power consumption performance, making it an ideal bipolar power switching device for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRF7413TRPBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7413trpbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:42:23</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts SOP-8 packaging and is suitable for high current applications at 30V voltage. With a continuous current processing capability of up to 8.5A, it is widely used in power conversion, motor drive, and battery management systems. With low conduction resistance and excellent thermal performance, it is an ideal semiconductor component for efficient power control in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BSO110N03MSG(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bso110n03msg-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:42:13</pubDate>
	<description><![CDATA[This SOP-8 package N-channel consumer grade MOSFET is designed specifically for medium to high voltage and high current applications. With a rated voltage of 30V and a continuous current processing capacity of up to 8.5A, it is widely used in power conversion, load switching, and battery management systems. It has low conduction resistance and excellent heat dissipation performance, making it an ideal choice for modern electronic devices to achieve efficient power control.]]></description>
</item>
<item>
	<title><![CDATA[IRF7805ZTRPBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7805ztrpbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:42:04</pubDate>
	<description><![CDATA[This SOP-8 package N-channel consumer grade MOSFET is designed specifically for medium current applications at 30V voltage. With a continuous current processing capability of 8.5A, it is widely used in power conversion, load switching, and battery management systems. With its low conduction resistance and excellent thermal performance, it is an ideal choice for modern electronic devices to achieve efficient power control.]]></description>
</item>
<item>
	<title><![CDATA[IRF7807ZTRPBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7807ztrpbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:41:54</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts SOP-8 packaging and is designed for high-efficiency applications at 30V voltage. With a continuous current carrying capacity of 8.5A, it is particularly suitable for power conversion, motor drive, and battery management systems. With low conduction resistance and excellent thermal characteristics, it is an indispensable high-performance power switching device in modern electronic products.]]></description>
</item>
<item>
	<title><![CDATA[IRLR3103TRPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlr3103trpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:41:45</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts TO-252-2L packaging and is designed specifically for high current applications at 30V voltage. Rated continuous current of up to 20A, suitable for power conversion, motor drive, and battery management systems, with low conduction resistance and excellent heat dissipation performance, it is an ideal semiconductor component choice for modern electronic devices to achieve efficient power control.]]></description>
</item>
<item>
	<title><![CDATA[IRLML6346TRPBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml6346trpbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:41:35</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts a small SOT-23 package and is suitable for medium current applications at 30V voltage. Providing 5A continuous current processing capability, widely used in power conversion, load switching, and battery management systems, with low on resistance and high efficiency, it is an ideal integrated component for modern electronic device design.]]></description>
</item>
<item>
	<title><![CDATA[IRFR5505TRPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr5505trpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:41:25</pubDate>
	<description><![CDATA[This TO-252-2L packaged P-channel consumer grade MOSFET is specifically designed for high current applications at 60V voltage. Providing up to 15A continuous current processing capability, widely used in power conversion, load switch control, and battery management systems, it has low conduction resistance and efficient heat dissipation performance, making it an ideal choice for modern electronic devices to achieve precise power management.]]></description>
</item>
<item>
	<title><![CDATA[SPD30P06P G(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/spd30p06p-g-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:41:17</pubDate>
	<description><![CDATA[This P-channel consumer grade MOSFET is designed in a TO-252-2L package specifically for medium to high voltage applications. Rated voltage of 60V, capable of carrying 15A continuous current, suitable for power conversion, load switching, and battery management systems, with low conduction resistance and excellent thermal stability, it is an ideal semiconductor component for modern electronic devices to achieve efficient power control.]]></description>
</item>
<item>
	<title><![CDATA[IRFR120NTRPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr120ntrpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:41:07</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts TO-252-2L packaging, designed specifically for 100V voltage environments, with a continuous current carrying capacity of up to 12A. Widely used in power conversion, motor drive, and battery management systems, it has low conduction resistance and good heat dissipation characteristics, making it an ideal semiconductor component for achieving efficient power control in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRLR120NTRPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlr120ntrpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:40:57</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts a TO-252-2L package, designed specifically for medium current applications at 100V voltage. Equipped with 12A continuous current processing capability, suitable for power conversion, motor drive, and battery management systems, it has low conduction resistance and efficient heat dissipation performance, making it an ideal high-performance power switching device for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRFR120ZTRPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr120ztrpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:40:48</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts TO-252-2L packaging, suitable for high-efficiency applications in 100V voltage environments. With a rated current of up to 12A, it is particularly suitable for power conversion, motor drive, and battery management systems. It has low conduction resistance and excellent heat dissipation performance, making it an ideal choice for power semiconductor components in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRF7319TRPBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7319trpbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:40:38</pubDate>
	<description><![CDATA[This SOP-8 packaged N+P channel consumer grade MOSFET is suitable for bidirectional current control at 30V voltage. Equipped with 6A continuous current processing capability, it is particularly suitable for power conversion, load switching, and battery management system applications. By integrating bipolar channels, it achieves high efficiency and flexible control, making it an ideal power semiconductor component for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRF7455TRPBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7455trpbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:40:29</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts SOP-8 packaging and is designed specifically for handling high current applications. Rated voltage of 30V, capable of carrying up to 80A continuous current, especially suitable for power conversion, battery management systems, and high-power electronic devices, with excellent conductivity and heat dissipation efficiency, it is an indispensable high-performance semiconductor component in modern electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[IPD060N03LG(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ipd060n03lg-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:40:19</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET is designed in a TO-252-2L package specifically for high current applications. With a rated voltage of 30V and a continuous current processing capacity of up to 80A, it is particularly suitable for power conversion, motor drive, and battery management systems. It has excellent conductivity and heat dissipation effects and is an ideal semiconductor component for modern electronic devices to achieve efficient power control.]]></description>
</item>
<item>
	<title><![CDATA[IRFR3709ZTRPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr3709ztrpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:40:10</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts TO-252-2L packaging and is designed specifically for high current applications at 30V voltage. Equipped with a continuous current processing capability of up to 80A, suitable for power conversion, motor drive, and battery management systems, it has excellent low conduction resistance and efficient heat dissipation performance, making it an ideal solution for modern electronic devices to achieve efficient power control.]]></description>
</item>
<item>
	<title><![CDATA[BSC097N06NS(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc097n06ns-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:40:00</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts DFN5X6-8L packaging, designed specifically for high current applications. Rated voltage of 60V, capable of carrying up to 65A continuous current, especially suitable for power conversion, battery management systems, and high-power electronic devices. It has low conduction resistance and efficient heat dissipation performance, making it an ideal high-performance semiconductor component for modern compact systems.]]></description>
</item>
<item>
	<title><![CDATA[BSC120N03MS G(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc120n03ms-g-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:39:51</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts a compact DFN5X6-8L package, designed specifically for high current applications at 30V voltage. With a rated continuous current of up to 70A, it is suitable for power conversion, battery management systems, and high-efficiency electronic devices. It has low conduction resistance and optimized heat dissipation performance, making it an ideal power control component for modern portable and space limited systems.]]></description>
</item>
<item>
	<title><![CDATA[BSC080N03LS G(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc080n03ls-g-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:39:41</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts DFN5X6-8L packaging, designed specifically for high current applications at 30V voltage. The rated continuous current is up to 70A, especially suitable for power conversion, battery management systems, and high-power electronic devices. It has low conduction resistance and excellent heat dissipation performance, making it an ideal solution for compact systems to achieve efficient power control.]]></description>
</item>
<item>
	<title><![CDATA[IRFH7914TRPBF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfh7914trpbf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:39:32</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts DFN5X6-8L packaging, designed specifically for high current applications at 30V voltage. Providing a continuous current carrying capacity of up to 70A, suitable for power conversion, battery management systems, and high-power electronic devices, with excellent conductivity and efficient heat dissipation technology, it is an ideal high-performance semiconductor component in modern compact systems.]]></description>
</item>
<item>
	<title><![CDATA[IRFR3806TRPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr3806trpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:39:22</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET is packaged in TO-252-2L, specifically designed to handle high current applications at 60V voltage. The rated continuous current is up to 50A, especially suitable for power conversion, motor drive, and battery management systems. It has low conduction resistance and excellent heat dissipation efficiency, making it an ideal semiconductor component for modern electronic products to achieve efficient power control.]]></description>
</item>
<item>
	<title><![CDATA[IRLR2905ZPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlr2905zpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:39:12</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET is packaged in TO-252-2L, specifically designed to handle high current applications at 60V voltage. It has a continuous current carrying capacity of 50A and is widely used in power conversion, motor drive, and battery management systems. It has low conduction resistance and efficient heat dissipation performance, making it an ideal choice for modern electronic devices to achieve efficient power control.]]></description>
</item>
<item>
	<title><![CDATA[HC3M0015065D(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/sgt-mosfet/">SiC MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/sgt-mosfet/hc3m0015065d-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:29:32</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET is packaged in TO-247 and designed specifically for handling high voltage and high current applications. Rated voltage of 650V, capable of carrying 120A continuous current, widely used in power conversion, motor drive, and battery management systems, with excellent conductivity and heat dissipation efficiency, it is an ideal semiconductor component for modern high-efficiency power control.]]></description>
</item>
<item>
	<title><![CDATA[HC2M0080120K(TO-247-4L)]]></title>
	<category domain="http://www.hxymos.com/en/sgt-mosfet/">SiC MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/sgt-mosfet/hc2m0080120k-to-247-4l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:29:23</pubDate>
	<description><![CDATA[This industrial grade N-channel MOSFET made of silicon carbide is packaged in TO-247-4L, specifically designed for high voltage and high current applications. Rated withstand voltage of 1200V, continuous current of up to 36A, suitable for power conversion, motor drive, and inverter systems in harsh environments, with excellent high-temperature performance, low conduction resistance, and high efficiency advantages, it is the core device of modern energy management systems.]]></description>
</item>
<item>
	<title><![CDATA[HC2M0160120K(TO-247-4L)]]></title>
	<category domain="http://www.hxymos.com/en/sgt-mosfet/">SiC MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/sgt-mosfet/hc2m0160120k-to-247-4l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:29:14</pubDate>
	<description><![CDATA[This industrial grade N-channel silicon carbide MOSFET is packaged in TO-247-4L and designed specifically for high voltage applications up to 1200V. Rated current of 19A, suitable for power conversion, motor drive, and inverter systems in harsh environments, with excellent high-temperature stability, low conduction loss, and fast switching characteristics, it is an ideal device for modern efficient energy management and power conversion.]]></description>
</item>
<item>
	<title><![CDATA[HC3M0075120K(TO-247-4L)]]></title>
	<category domain="http://www.hxymos.com/en/sgt-mosfet/">SiC MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/sgt-mosfet/hc3m0075120k-to-247-4l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:29:05</pubDate>
	<description><![CDATA[This industrial grade silicon carbide N-channel MOSFET is packaged in TO-247-4L and designed specifically for 1200V high voltage and high current applications. Rated continuous current of 32A, suitable for power conversion, motor drive, and high-voltage inverter systems in harsh environments, with excellent high-temperature performance and low conduction loss characteristics, it is an ideal device choice for modern efficient energy management.]]></description>
</item>
<item>
	<title><![CDATA[HC3M0075120D(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/sgt-mosfet/">SiC MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/sgt-mosfet/hc3m0075120d-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:28:56</pubDate>
	<description><![CDATA[This industrial grade silicon carbide N-channel MOSFET is packaged in TO-247 and designed specifically for high voltage and high current applications. The rated breakdown voltage is 1200V, and the continuous current can reach 32A, especially suitable for power converters, motor drives, and industrial inverter systems. It has excellent high-temperature stability and low loss characteristics, making it an ideal choice for efficient power management in harsh environments.]]></description>
</item>
<item>
	<title><![CDATA[HC3M0060065K(TO-247-4L)]]></title>
	<category domain="http://www.hxymos.com/en/sgt-mosfet/">SiC MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/sgt-mosfet/hc3m0060065k-to-247-4l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:28:46</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-247-4L packaging, designed specifically for handling 650V high voltage, medium to high current applications. Rated continuous current of up to 29A, suitable for power conversion, motor drive, and battery management systems, with excellent conductivity and heat dissipation efficiency, it is an ideal power semiconductor component for modern industrial and consumer electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[HC3M0060065D(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/sgt-mosfet/">SiC MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/sgt-mosfet/hc3m0060065d-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:28:37</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-247 packaging, designed specifically for handling 650V high voltage and high current applications. With a continuous current carrying capacity of 29A, it is widely used in power conversion, motor drive, and battery management systems. It has low conduction resistance and efficient heat dissipation performance, making it an ideal choice for modern electronic devices to achieve high power density and energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[HC3M0032120K(TO-247-4L)]]></title>
	<category domain="http://www.hxymos.com/en/sgt-mosfet/">SiC MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/sgt-mosfet/hc3m0032120k-to-247-4l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:28:28</pubDate>
	<description><![CDATA[This industrial grade N-channel silicon carbide MOSFET is packaged in TO-247-4L and designed specifically for high voltage applications at 1200V, with a rated current of up to 63A. Suitable for power conversion, motor drive, and inverter systems in harsh environments, it has excellent high-temperature stability, low conduction resistance, and fast switching performance, making it an ideal choice for modern efficient energy management and power control.]]></description>
</item>
<item>
	<title><![CDATA[HC3M0032120D(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/sgt-mosfet/">SiC MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/sgt-mosfet/hc3m0032120d-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:28:19</pubDate>
	<description><![CDATA[This silicon carbide industrial grade N-channel MOSFET is packaged in TO-247 and designed specifically for high voltage and high current applications at 1200V. With a rated continuous current of up to 63A, it is particularly suitable for harsh environments such as power conversion, motor drive, and inverter systems. It has excellent high-temperature performance, low conduction loss, and fast switching response, making it a core component of modern high-efficiency power electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[HC3M0016120D(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/sgt-mosfet/">SiC MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/sgt-mosfet/hc3m0016120d-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:28:10</pubDate>
	<description><![CDATA[This industrial grade N-channel silicon carbide MOSFET adopts TO-247 packaging and is designed specifically for 1200V high voltage and high current applications. With a rated continuous current of up to 115A, it is particularly suitable for power conversion, motor drive, and inverter systems in harsh environments. It has excellent high-temperature stability, low conduction loss, and fast switching ability, making it a key device for modern efficient energy management and power conversion.]]></description>
</item>
<item>
	<title><![CDATA[HC3M0015065K(TO-247-4L)]]></title>
	<category domain="http://www.hxymos.com/en/sgt-mosfet/">SiC MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/sgt-mosfet/hc3m0015065k-to-247-4l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:28:01</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-247-4L packaging and is designed specifically for 650V high voltage and high current applications. Rated continuous current of up to 120A, suitable for power conversion, motor drive, and battery management systems, with low conduction resistance and efficient heat dissipation performance, it is an ideal semiconductor component for modern electronic devices to achieve high power density and energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[HC2M1000170D(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/sgt-mosfet/">SiC MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/sgt-mosfet/hc2m1000170d-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:27:52</pubDate>
	<description><![CDATA[This silicon carbide industrial grade N-channel MOSFET is packaged in TO-247 and designed specifically for 1700V ultra-high voltage, medium current applications. Rated current of 5A, suitable for power conversion, inverters, and high-voltage switching circuits in harsh environments. It has excellent high-temperature stability, low conduction resistance, and fast switching characteristics, making it an ideal component for modern power electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[HC2M0160120D(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/sgt-mosfet/">SiC MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/sgt-mosfet/hc2m0160120d-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:27:43</pubDate>
	<description><![CDATA[This industrial grade N-channel silicon carbide MOSFET is packaged in TO-247 and designed specifically for high voltage applications up to 1200V. The rated current is 18A, suitable for power conversion, motor drive, and inverter systems in harsh environments. It has excellent high-temperature stability, low conduction resistance, and fast switching response speed, making it an ideal component for efficient control in modern power electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[HC2M0080120D(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/sgt-mosfet/">SiC MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/sgt-mosfet/hc2m0080120d-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:27:34</pubDate>
	<description><![CDATA[This silicon carbide industrial grade N-channel MOSFET is packaged in TO-247 and designed specifically for 1200V high voltage and high current applications. With a rated current of 36A, it is particularly suitable for power conversion, motor drive, and inverter systems in harsh environments. It has excellent high-temperature stability, low conduction resistance, and fast switching speed, making it an ideal semiconductor component for modern efficient energy management.]]></description>
</item>
<item>
	<title><![CDATA[HC2M0045170D(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/sgt-mosfet/">SiC MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/sgt-mosfet/hc2m0045170d-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:27:25</pubDate>
	<description><![CDATA[This industrial grade N-channel silicon carbide MOSFET is packaged in TO-247 and designed specifically for 1700V ultra-high voltage and high current applications. The rated continuous current is up to 72A, suitable for power conversion, motor drive, and inverter systems under extreme conditions. It has excellent high-temperature stability, low conduction resistance, and fast switching performance, and is the core component of modern power electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[HC2M0040120K(TO-247-4L)]]></title>
	<category domain="http://www.hxymos.com/en/sgt-mosfet/">SiC MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/sgt-mosfet/hc2m0040120k-to-247-4l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:27:16</pubDate>
	<description><![CDATA[This industrial grade N-channel MOSFET made of silicon carbide is packaged in TO-247-4L, specifically designed for high voltage and high current applications at 1200V. The rated continuous current is as high as 78A, especially suitable for high-power power conversion, motor drive, and inverter systems. It has excellent high-temperature stability performance, low conduction resistance, and fast switching response, and is the core semiconductor component of modern efficient energy management systems.]]></description>
</item>
<item>
	<title><![CDATA[HC2M0040120D(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/sgt-mosfet/">SiC MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/sgt-mosfet/hc2m0040120d-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-20 06:27:07</pubDate>
	<description><![CDATA[This industrial grade silicon carbide N-channel MOSFET is packaged in TO-247 and optimized for 1200V high-voltage applications. With a rated current of up to 55A, it is suitable for power conversion, motor drive, and inverter systems under extreme conditions. It has excellent high-temperature stability, low conduction loss, and fast switching characteristics, making it a key device for modern efficient energy management and power conversion.]]></description>
</item>
<item>
	<title><![CDATA[IRFZ44NS(TO-263)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfz44ns-to-263-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 01:53:48</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-263 packaging, with 55V high voltage resistance and excellent 49A high current processing capability. Specially designed for high-performance and high-power switching applications, widely used in various consumer electronics products, providing excellent energy efficiency and system stability performance.]]></description>
</item>
<item>
	<title><![CDATA[IRFP450(TO-247S)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfp450-to-247s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 01:53:37</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-247S packaging, with 500V high voltage resistance and 14A high current carrying capacity, suitable for applications such as high-voltage power conversion and motor drive, providing efficient switch control and excellent power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[HXY20P03D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy20p03d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 01:53:27</pubDate>
	<description><![CDATA[This field-effect transistor has a current carrying capacity of 20A, a working voltage of 30V, and a typical internal resistance of 36mR. Its VGS is 20V, which belongs to P-type devices. Suitable for application scenarios that require high efficiency and low power consumption, such as power management, signal amplification, etc., to ensure stable system operation.]]></description>
</item>
<item>
	<title><![CDATA[20P03(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/20p03-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 01:53:17</pubDate>
	<description><![CDATA[This field-effect transistor has a current carrying capacity of 20A and can operate stably at a voltage of 30V. Its typical internal resistance value is 36m Ω, VGS is 20V, and it belongs to P-type. Suitable for various application scenarios, such as power management, signal amplification, and switch circuits, ensuring efficient and stable operation of the system.]]></description>
</item>
<item>
	<title><![CDATA[IRFR024N(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr024n-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 01:53:06</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-252-2L packaging, with 100V high voltage resistance and up to 20A continuous current processing capacity, designed specifically for high-performance electronic devices, suitable for power conversion, motor drive and other applications, providing efficient and stable power switching solutions.]]></description>
</item>
<item>
	<title><![CDATA[HM6303(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hm6303-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 01:52:56</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23-3L      Parameter Introduction:Current/A: 4.2, Voltage/V: 30, Internal Resistance Typ/mR: 45, VGS: 12, Type: P,     (Ordering Information):  Product Code: H104273     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[10N65(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/10n65-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 01:52:46</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-220F packaging, with 650V high voltage resistance and 10A high current processing capability. It is designed specifically for high-performance electronic devices and is applied in power conversion, motor drive and other fields, providing excellent switching performance and stable power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[BSN20(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsn20-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 01:52:35</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 packaging, with a rated voltage of 50V and a current carrying capacity of 0.5A. Especially suitable for low to medium current applications such as battery protection and signal switching, with its excellent low conduction resistance and fast switching characteristics, it achieves precise and efficient power management, making it an ideal component choice for various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRFR5305T(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr5305t-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 01:52:25</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts TO-252-2L packaging, with 60V high voltage resistance and high-efficiency 20A current processing ability. Specially designed for medium and high voltage switch applications, widely used in various consumer electronics products, effectively improving power conversion efficiency and system stability, it is an ideal semiconductor device for optimizing circuit performance.]]></description>
</item>
<item>
	<title><![CDATA[SS8550(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/ss8550-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 01:42:29</pubDate>
	<description><![CDATA[This SOT-89 packaged PNP type transistor has a 25V VCEO withstand voltage and a stable collector current IC of 1.5A. Its amplification range is between 200 and 300, suitable for high gain and high current applications, making it an ideal choice for your electronic design and manufacturing.]]></description>
</item>
<item>
	<title><![CDATA[TIP42C(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/tip42c-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 01:42:18</pubDate>
	<description><![CDATA[This TO-220 packaged PNP transistor has a 100V high voltage VCEO and 6A high current collector capacity, with an amplification factor in the range of 15 to 75. It is suitable for high-power switching circuits and medium amplification needs, and is an indispensable semiconductor component in industrial control, power conversion, and other fields.]]></description>
</item>
<item>
	<title><![CDATA[TIP41C(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/tip41c-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 01:42:07</pubDate>
	<description><![CDATA[This TO-220 packaged NPN transistor has a high VCEO withstand voltage of 100V and a powerful collector current capability of 6A. Its amplification factor is adjustable between 15 and 75, making it suitable for various high-power, high current switching and amplification circuit designs. It is an ideal choice for electronic engineers.]]></description>
</item>
<item>
	<title><![CDATA[BTA16(TO-220A)]]></title>
	<category domain="http://www.hxymos.com/en/thyristor/">Thyristor</category>
	<link><![CDATA[http://www.hxymos.com/en/thyristor/bta16-to-220a-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 12:51:06</pubDate>
	<description><![CDATA[This high-quality TO-220 packaged bidirectional thyristor is designed specifically for high voltage applications and has excellent 600V reverse and forward repetitive peak voltage capabilities. The device has a low trigger gate current Igt of only 50mA, ensuring efficient and reliable triggering, and performs excellently in power conversion and motor speed regulation fields. It can carry high current loads and maintain a stable conduction state, suitable for various AC switching circuits and power regulation solutions. Its sturdy and durable TO-220 packaging form is both convenient for installation and conducive to heat dissipation, making it an ideal choice for building high-performance power electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[DW01(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/battery-management/">Battery-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/battery-management/dw01-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 12:50:59</pubDate>
	<description><![CDATA[DW01, packaged with SOT23-6L, is equipped with a high-precision voltage detection circuit and delay circuit. By detecting the voltage and current of the battery, it can protect the battery from overcharging, discharging, and overcurrent. Suitable for the protection circuit of single lithium-ion/lithium polymer rechargeable batteries.]]></description>
</item>
<item>
	<title><![CDATA[78M15(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/78m15-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 12:42:48</pubDate>
	<description><![CDATA[This high-performance LDO linear regulator is packaged in TO-252-2L and designed specifically for high current applications. Provide stable 15V output voltage and up to 0.8A output current capability, supporting a wide input voltage range up to 35V. With excellent load regulation performance and low noise characteristics, ensure stable and reliable high-voltage power supply for your equipment under high power conditions.]]></description>
</item>
<item>
	<title><![CDATA[HXYSLVU2.8-4(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hxyslvu2-8-4-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 12:29:00</pubDate>
	<description><![CDATA[This SOP-8 package unidirectional ESD electrostatic protection diode is designed to provide efficient four channel protection for 2.8V systems. Each channel can withstand a peak pulse current IPP of up to 20A, effectively preventing damage to the circuit caused by unidirectional electrostatic discharge. The device‘s junction capacitance is as low as 3pF, ensuring excellent signal integrity on high-speed data interfaces. It is an ideal solution for modern multi line ESD protection requirements, suitable for high integration and high-performance electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ6.8CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj6-8ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 12:28:50</pubDate>
	<description><![CDATA[The high-performance bidirectional TVS transient suppression diode packaged in SMA is designed for efficient protection. With a rated reverse working voltage of 5.8V, VRWM can withstand peak pulse current IPP of up to 39A, quickly responding to protect your circuit from transient surges, electrostatic discharge, and overvoltage impact damage, making it an ideal protection choice for sensitive electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ6.8A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj6-8a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 12:28:39</pubDate>
	<description><![CDATA[This SMB package is a unidirectional TVS transient suppression diode designed specifically for high-power transient protection. Having a stable reverse working voltage VRWM of 5.8V and an excellent unidirectional pulse peak current IPP capability of up to 38A, it can instantly absorb and clamp overvoltage, effectively protecting the circuit from surges, transient interference, and ESD impact damage. It is an ideal choice to ensure the stable operation of sensitive electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[LESD8LL5.0CT5G(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/lesd8ll5-0ct5g-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 12:28:29</pubDate>
	<description><![CDATA[This DFN1006-2L packaged bidirectional ESD electrostatic protection diode is designed to provide high-level single channel protection for 5V systems. Equipped with 4A peak pulse current IPP capability, effectively absorbing and clamping bidirectional transient ESD impacts, ensuring that the circuit is not damaged. The ultra-low junction capacitance is only 0.35pF, which is particularly suitable for high-speed data transmission interfaces, achieving excellent signal integrity and minimal interference, making it an ideal ESD protection solution for modern precision electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[PESDNC2FD7VB(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/pesdnc2fd7vb-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 12:28:18</pubDate>
	<description><![CDATA[This DFN1006-2L packaged bidirectional ESD electrostatic protection diode is designed specifically for 7V systems, providing single channel efficient protection. The device has a 9A peak pulse current IPP capability, which can effectively withstand bidirectional transient ESD impacts and ensure that electronic devices are not damaged by static electricity. Its 8pF low junction capacitance characteristic is particularly suitable for high-speed data interface applications, balancing excellent signal integrity and high-strength ESD protection performance.]]></description>
</item>
<item>
	<title><![CDATA[LESD8D12CT5G(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/lesd8d12ct5g-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 12:28:08</pubDate>
	<description><![CDATA[This DFN1006-2L packaged bidirectional ESD electrostatic protection diode is designed to provide high-level single channel protection for 12V systems. With a peak pulse current IPP capability of up to 8A, it effectively absorbs and suppresses bidirectional transient ESD impacts, ensuring that electronic devices are not damaged by static electricity. The 8pF low junction capacitance design helps maintain the transmission quality of high-speed signal lines, making it an ideal ESD protection solution for modern high-performance interfaces and portable electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[LESD8D24CT5G(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/lesd8d24ct5g-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 12:27:57</pubDate>
	<description><![CDATA[This DFN1006-2L packaged bidirectional ESD electrostatic protection diode is designed specifically for 24V systems, providing single channel strong protection. Equipped with 5A peak pulse current IPP capability, it can effectively suppress bidirectional transient ESD impact, ensuring that the circuit is not damaged by static electricity in high voltage environments. Its 15pF junction capacitor is suitable for high-speed interface applications, combining high performance and reliable ESD protection to maintain signal integrity under harsh conditions.]]></description>
</item>
<item>
	<title><![CDATA[ESD3Z5.0(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd3z5-0-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 12:27:46</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 9, voltage/V: 5, junction capacitance Typ/pF: 60, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H101122     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[D5V0L1B2LP3-7(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/d5v0l1b2lp3-7-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 12:27:36</pubDate>
	<description><![CDATA[This DFN0603-2L packaged bidirectional ESD electrostatic protection diode is designed to provide efficient single channel protection for 5V systems. Equipped with 8A peak pulse current IPP capability, effectively combating bidirectional transient ESD events. The 15pF low junction capacitance design ensures signal integrity during high-speed data transmission, making it an ideal choice for modern compact electronic devices and high demand interfaces, providing excellent electrostatic discharge protection performance.]]></description>
</item>
<item>
	<title><![CDATA[LESD11LL5.0CT5G(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/lesd11ll5-0ct5g-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 12:27:25</pubDate>
	<description><![CDATA[This electrostatic and surge protection device (TVS/ESD) has a peak pulse current IPP processing capability of 4.5A, ensuring reliable protection in the event of transient high currents. Its reverse working voltage VRMM is 5V, suitable for circuits that require a stable voltage environment. This component has an extremely low junction capacitance CJ, only 0.25 picofarads (pF), effectively reducing the impact on signal transmission speed and maintaining signal clarity. As a single channel, Bi bidirectional type protector, it can provide symmetrical protection on the bidirectional signal path to prevent damage caused by overvoltage. This device is suitable for interface protection in various electronic devices, such as data transmission lines and communication ports, to resist the risks caused by electrostatic discharge and transient voltage fluctuations.]]></description>
</item>
<item>
	<title><![CDATA[TPESD0502B(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/tpesd0502b-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 12:27:15</pubDate>
	<description><![CDATA[This SOT-523 packaged unidirectional ESD electrostatic protection diode is designed specifically for 5V systems and features a dual channel configuration. Each channel can withstand 4A peak pulse current IPP, effectively preventing damage to the circuit caused by unidirectional electrostatic discharge. A junction capacitance of only 0.5pF ensures excellent signal integrity on high-speed data lines, making it an ideal choice for high-density interfaces and sensitive electronic devices, providing an efficient and non-interference ESD protection solution for signal transmission.]]></description>
</item>
<item>
	<title><![CDATA[PESD12VS1UB(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/pesd12vs1ub-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 12:27:04</pubDate>
	<description><![CDATA[This SOD-523 packaged unidirectional ESD electrostatic protection diode is suitable for 12V systems and provides efficient single channel protection. Equipped with 8A peak pulse current IPP capability, it can effectively suppress unidirectional transient ESD impact and ensure that the circuit is not damaged. The junction capacitance is 34pF and maintains good signal integrity on high-speed data lines, making it an ideal ESD protection solution for high demand electronic device interfaces.]]></description>
</item>
<item>
	<title><![CDATA[PESD5V0U1UA(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/pesd5v0u1ua-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 12:26:54</pubDate>
	<description><![CDATA[This DFN1006-2L packaged bidirectional ESD electrostatic protection diode is designed to provide single channel efficient protection for 5V systems. Equipped with 2.5A peak pulse current IPP capability, it can effectively suppress bidirectional transient ESD impact and protect the circuit from damage. The junction capacitance is as low as 2.5pF, ensuring excellent signal integrity in high-speed data transmission applications, making it an ideal choice for miniaturized electronic devices and providing excellent electrostatic protection performance.]]></description>
</item>
<item>
	<title><![CDATA[LESD9D5.0CT5G(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/lesd9d5-0ct5g-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-23 12:26:43</pubDate>
	<description><![CDATA[This SOD-923 packaged bidirectional ESD electrostatic protection diode provides excellent single channel protection for 5V systems. Equipped with 8A peak pulse current IPP performance, effectively resisting bidirectional transient ESD impact, ensuring that the circuit is not damaged. The 15pF low junction capacitance design is beneficial for the signal integrity of high-speed data lines, and is an ideal ESD protection component for modern compact electronic equipment interfaces and high anti-interference requirements.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C3V6(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c3v6-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 03:01:30</pubDate>
	<description><![CDATA[This SOD-123 packaged voltage regulator diode provides precise 3.6V stable voltage output (VZ) and has a low reverse current IR of 4uA, demonstrating excellent performance under 5mA IZT conditions. The maximum dissipation power reaches 0.5W, ensuring efficient and stable voltage stabilization in various electronic devices. Especially suitable for miniaturization and high-precision circuit design, it is an ideal voltage stabilization solution for 3.6V power supply systems.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C3V3(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c3v3-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 03:01:22</pubDate>
	<description><![CDATA[This SOD-123 packaged voltage regulator diode has a precise 3.3V stable voltage (VZ) and a low reverse current IR of 4uA, exhibiting excellent performance under 5mA IZT conditions. The maximum dissipation power reaches 0.5W, ensuring efficient and stable voltage control in various applications. Specially designed for miniaturization and high-precision circuits, it is an ideal choice for 3.3V power supply stabilization requirements.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C6V2(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c6v2-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 03:01:14</pubDate>
	<description><![CDATA[This SOD-123 packaged voltage regulator diode has a precise 6.2V stable voltage (VZ) and a low reverse current IR of 2.4uA, exhibiting excellent performance under 5mA IZT conditions. The maximum dissipation power reaches 0.5W, ensuring efficient and stable operation in various application scenarios. Suitable for small circuit designs that require both volume and voltage stability, it is an ideal low voltage stabilization solution.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C16(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c16-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 03:01:06</pubDate>
	<description><![CDATA[This SOD-123 packaged voltage regulator diode provides precise 16V stable voltage (VZ) and is equipped with an ultra-low reverse leakage current IR of only 0.04uA, demonstrating excellent performance under 5mA IZT conditions. Its maximum dissipation power is 0.5W, ensuring efficient and stable voltage control in various electronic devices, especially suitable for miniaturized circuit designs that require high voltage accuracy.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C15(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c15-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 03:00:58</pubDate>
	<description><![CDATA[This SOD-123 packaged voltage regulator diode has a precise 15V stable voltage (VZ) and an ultra-low reverse leakage current IR of only 0.04uA, demonstrating excellent performance under 5mA IZT conditions. The maximum dissipation power reaches 0.5W, ensuring high efficiency and long-term stability in various applications. Specially designed for miniaturization and high-precision circuits, it is your ideal solution for achieving precise voltage regulation control.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C18(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c18-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 03:00:50</pubDate>
	<description><![CDATA[This SOD-123 packaged high-precision voltage regulator diode has a stable 18V voltage (VZ) and is equipped with an ultra-low reverse leakage current IR of only 0.04uA, performing excellently under 5mA IZT conditions. The maximum dissipation power is 0.5W, ensuring efficient and stable operation in various applications. Suitable for small circuit designs with strict voltage control requirements, it is an ideal choice for precision voltage regulation and system protection.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C8V2(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c8v2-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 03:00:42</pubDate>
	<description><![CDATA[This SOD-123 packaged voltage regulator diode has a precise 8.2V stable voltage (VZ) and a lower reverse current IR of 0.56uA, exhibiting excellent performance under 5mA IZT conditions. The maximum dissipation power reaches 0.5W, ensuring efficient and stable operation in various application scenarios. Suitable for small circuit designs with high demands for voltage accuracy and thermal stability, it is your ideal integrated voltage stabilization solution.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C9V1(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c9v1-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 03:00:34</pubDate>
	<description><![CDATA[This SOD-123 packaged voltage regulator diode provides precise 9.1V stable voltage (VZ), with a reverse current IR as low as 0.16uA, and performs excellently at 5mA IZT. Its maximum dissipation power reaches 0.5W, ensuring efficient and stable operation in various applications. Suitable for small circuit designs with high requirements for voltage accuracy and thermal stability, it is an ideal choice for precision voltage regulation control.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C12S(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c12s-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 03:00:26</pubDate>
	<description><![CDATA[This SOD-323 packaged miniature voltage regulator diode has a precise 12V stable voltage (VZ) and an ultra-low reverse leakage current IR of only 0.08uA, demonstrating excellent performance under 5mA IZT conditions. The maximum dissipation power is 0.2W, ensuring efficient and stable voltage control in miniaturized electronic devices. Suitable for compact space and high-precision circuit design, it is an ideal choice for precision voltage regulation applications.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C4V7S(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c4v7s-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 03:00:18</pubDate>
	<description><![CDATA[This SOD-323 packaged miniature voltage regulator diode provides a precise 4.7V stable voltage (VZ), with a low reverse current IR of 2.4uA, and performs well under 5mA IZT testing. The maximum dissipation power is designed to be 0.2W, ensuring efficient and stable operation in a compact space. Suitable for circuit design that requires both volume and voltage accuracy, it is an ideal voltage stabilization solution for miniaturized electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C20(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c20-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 03:00:10</pubDate>
	<description><![CDATA[This SOD-123 packaged voltage regulator diode has a stable 20V voltage (VZ) and an ultra-low reverse leakage current IR of only 0.04uA, exhibiting excellent performance under 5mA IZT conditions. The maximum dissipation power is as high as 0.5W, ensuring efficient and stable operation in various applications. Especially suitable for circuit designs with high requirements for voltage accuracy and heat resistance, it is an ideal high-end voltage stabilization solution.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C18S(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c18s-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 03:00:02</pubDate>
	<description><![CDATA[This SOD-323 packaged miniature voltage regulator diode provides precise 18V stable voltage (VZ) and has an extremely low reverse current IR of only 0.04uA, demonstrating excellent performance under 5mA IZT conditions. The maximum dissipation power is 0.2W, ensuring efficient and low-temperature operation. Specially designed for compact spaces and high-precision circuits, it is your ideal choice for achieving stable voltage control in miniaturized electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C24(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c24-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:59:54</pubDate>
	<description><![CDATA[This SOD-123 packaged high-precision voltage regulator diode has excellent 24V stable voltage (VZ) and ultra-low reverse current IR of only 0.04uA, performing excellently under 5mA IZT conditions. Its maximum dissipated power is 0.2W, ensuring efficient and low heat operation in various applications. Suitable for precision circuit design that requires extremely high voltage stability, it is your ideal high-end voltage stabilization solution.]]></description>
</item>
<item>
	<title><![CDATA[PC357C(SOP-4)]]></title>
	<category domain="http://www.hxymos.com/en/optocoupler-phototransistor-output/">Optocoupler</category>
	<link><![CDATA[http://www.hxymos.com/en/optocoupler-phototransistor-output/pc357c-sop-4-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:34:43</pubDate>
	<description><![CDATA[This SOP-4 packaged optocoupler uses a phototransistor output method and is suitable for DC input voltage environments. Capable of starting with a forward voltage of 1.2V, providing a stable output current of 50mA, and possessing 6V reverse voltage protection capability, achieving efficient signal isolation and transmission. Widely used in communication systems and various circuit designs to ensure safe and reliable electrical isolation and data exchange.]]></description>
</item>
<item>
	<title><![CDATA[EL357C(SOP-4)]]></title>
	<category domain="http://www.hxymos.com/en/optocoupler-phototransistor-output/">Optocoupler</category>
	<link><![CDATA[http://www.hxymos.com/en/optocoupler-phototransistor-output/el357c-sop-4-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:34:36</pubDate>
	<description><![CDATA[This SOP-4 packaged optocoupler uses a phototransistor output method, designed specifically for electrical isolation and signal transmission. It has a low forward voltage of 1.2V, suitable for DC input voltage environments, can provide a stable output current of up to 50mA, and has a high reverse voltage protection capability of 6V. This device has excellent performance and is widely used in signal isolation scenarios in communication equipment and various circuits, ensuring efficient and safe data transmission.]]></description>
</item>
<item>
	<title><![CDATA[TDA7388(HZIP-25)]]></title>
	<category domain="http://www.hxymos.com/en/audio-power-amplifier/">Audio amplifier</category>
	<link><![CDATA[http://www.hxymos.com/en/audio-power-amplifier/tda7388-hzip-25-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:34:30</pubDate>
	<description><![CDATA[This HZIP-25 packaged audio power amplifier is specifically designed for high fidelity audio systems. The input voltage range is 18V, which can provide stable and abundant energy supply. Its strength lies in its ability to achieve 4-channel independent output, with each channel reaching up to 25W and a total output power of 100W, meeting the needs of large dynamic music playback. At the same time, it has excellent energy efficiency performance, with a working power consumption of only 80W, which is energy-saving and environmentally friendly. In addition, the device can maintain stable performance under harsh operating temperatures, with a suitable ambient temperature range of -20 ℃ to+75 ℃, making it an ideal choice for professional audio equipment and high-end audio systems.]]></description>
</item>
<item>
	<title><![CDATA[MAX813LESA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max813lesa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:34:23</pubDate>
	<description><![CDATA[This SOP-8 packaged monitoring and reset chip is designed specifically for 5 to 5.5V power supply systems, with flexible reset threshold settings (4.50V or 4.75V) to ensure quick response in case of abnormal power supply voltage drops. When the voltage is detected to be below the preset threshold, a low-level effective reset signal is immediately issued to effectively prevent system crashes and data loss. This device focuses on precise monitoring of a single power supply voltage and is an ideal choice for various microprocessors and embedded systems, providing critical power protection functions to ensure stable operation of the equipment.]]></description>
</item>
<item>
	<title><![CDATA[MAX706RESA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max706resa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:34:16</pubDate>
	<description><![CDATA[This SOP-8 packaged monitoring and reset chip is designed specifically for precision systems and is suitable for power supply voltage environments ranging from 5V to 5.5V. Equipped with advanced reset function, the threshold voltage is accurately between 2.55V and 2.70V, effectively ensuring stable system restart at low levels. Its strength lies in its ability to accurately monitor one voltage point, ensuring safe and reliable equipment operation, making it an ideal choice for ensuring system stability and reliability.]]></description>
</item>
<item>
	<title><![CDATA[MAX705CSA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max705csa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:34:10</pubDate>
	<description><![CDATA[This SOP-8 packaged monitoring and reset chip is suitable for 5 to 5.5V power systems and has an adjustable reset threshold (4.50V or 4.75V) to accurately monitor power supply voltage. Once the voltage drops below the preset threshold, a low-level effective reset signal is immediately triggered to ensure timely and stable system restart in case of power failure. Designed specifically for a single power supply, this device provides excellent voltage protection function and is an essential component of embedded devices and microprocessor systems, ensuring that the system operates in a safe and stable state at all times.]]></description>
</item>
<item>
	<title><![CDATA[MAX706PESA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max706pesa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:34:03</pubDate>
	<description><![CDATA[This SOP-8 packaged monitoring and reset chip is specifically designed for 5 to 5.5V power systems and has an adjustable reset threshold of 2.55V to 2.70V. When the power supply voltage is detected to be below the preset range, a low-level effective reset signal is immediately triggered to ensure that the system can quickly and accurately restart and maintain stable operation in case of power supply abnormalities. Accurate monitoring suitable for single power supply systems is an ideal choice for microprocessors and embedded applications, providing critical power protection functions and effectively preventing system failures caused by voltage fluctuations.]]></description>
</item>
<item>
	<title><![CDATA[MAX813LCSA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max813lcsa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:33:56</pubDate>
	<description><![CDATA[This SOP-8 packaged monitoring and reset chip is suitable for 5 to 5.5V power supply systems, providing precise voltage monitoring function. It has an adjustable reset threshold (4.50V or 4.75V), and when the power supply voltage is lower than the preset value, it will quickly send out a low-level effective reset signal, effectively preventing system instability caused by power fluctuations. This chip focuses on real-time monitoring of a single power supply voltage and is an ideal protection solution for embedded systems and microprocessors, ensuring that devices can safely and accurately restart in case of power abnormalities, and ensuring stable and reliable system operation.]]></description>
</item>
<item>
	<title><![CDATA[MAX705ESA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max705esa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:33:49</pubDate>
	<description><![CDATA[This monitoring and reset chip is packaged in standard SOP-8 and designed specifically for power supply voltage systems ranging from 5 to 5.5V. It has a precise reset threshold voltage option (4.50V or 4.75V), which can immediately trigger a low-level effective reset signal when the power supply voltage drops below the set threshold, ensuring stable operation and reliable restart of the system. This chip has a single channel voltage monitoring function, suitable for various microprocessors and embedded systems, providing powerful power monitoring protection and effectively preventing abnormal system behavior caused by power fluctuations.]]></description>
</item>
<item>
	<title><![CDATA[MAX708SESA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max708sesa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:33:43</pubDate>
	<description><![CDATA[This SOP-8 packaged monitoring and reset chip is suitable for 5 to 5.5V power systems and has an adjustable reset threshold of 2.85V-3V. Once the power supply voltage is detected to be below the preset range, a low-level effective reset signal is immediately triggered to ensure that the system can restart in a timely manner and maintain stable operation in case of power supply abnormalities. Designed specifically for a single power supply, it accurately monitors voltage status and is an ideal choice for microprocessors and embedded systems, providing critical power protection functions to effectively prevent device failures caused by voltage fluctuations.]]></description>
</item>
<item>
	<title><![CDATA[MAX708RESA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max708resa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:33:36</pubDate>
	<description><![CDATA[This SOP-8 packaged monitoring and reset chip is designed for 5 to 5.5V power systems and has an adjustable reset threshold of 2.55V-2.70V. When the power supply voltage is detected to be below the preset range, it will quickly trigger a low-level effective reset signal, ensuring that the system can promptly restore its initial state in case of power supply abnormalities. Specially designed for precise monitoring of a single power source, widely used in microprocessors and embedded systems, providing crucial voltage protection functions, effectively avoiding system instability or faults caused by voltage fluctuations.]]></description>
</item>
<item>
	<title><![CDATA[MAX708ESA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max708esa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:33:29</pubDate>
	<description><![CDATA[This SOP-8 packaged monitoring and reset chip is designed specifically for 5 to 5.5V power supply systems and has an intelligently adjustable reset threshold (4.25V-4.50V), ensuring that a low-level effective reset signal can be quickly sent out when the power supply voltage drops to the set range. For precise monitoring of a single power supply voltage, this device can effectively prevent system failures caused by voltage fluctuations. It is an ideal partner for embedded devices and microprocessors, providing a stable and reliable power protection mechanism to ensure that the system always operates normally.]]></description>
</item>
<item>
	<title><![CDATA[MAX706ESA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max706esa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:33:23</pubDate>
	<description><![CDATA[This SOP-8 packaged monitoring and reset chip is suitable for 5 to 5.5V power supply systems, with adjustable reset thresholds (4.25V-4.50V), and can accurately monitor a single power supply voltage in real-time. Once the voltage drops to the preset range, it will immediately trigger a low-level effective reset signal to ensure that the system can restart in a timely and accurate manner in case of power fluctuations, avoiding abnormal operation. As a reliable partner of microprocessors and embedded systems, it provides critical voltage protection functions to ensure that devices are always in a stable and safe working state.]]></description>
</item>
<item>
	<title><![CDATA[LMV324IDR(SOP-14)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/lmv324idr-sop-14-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:33:16</pubDate>
	<description><![CDATA[This four way operational amplifier is packaged in SOP-14 and has excellent low input offset voltage (7mV) and ultra-low input bias current (50pA), ensuring high-precision signal processing capability. Its swing rate is as high as 1V/us, which can quickly respond to signal changes and is suitable for various applications that require high-performance analog signal amplification, such as filtering, signal conditioning, sensor interfaces, etc.]]></description>
</item>
<item>
	<title><![CDATA[MAX706SESA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max706sesa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:33:10</pubDate>
	<description><![CDATA[This SOP-8 packaged monitoring and reset chip is designed specifically for 5 to 5.5V power systems and has an adjustable reset threshold (2.85V-3V). When the power supply voltage is detected to be below the preset range, it quickly sends out a low-level effective reset signal, effectively preventing system abnormalities caused by power drops. Focusing on precise monitoring of a single power supply voltage, suitable for microprocessors and various embedded applications, providing crucial power protection functions to ensure stable and safe device restart and operation in the face of voltage fluctuations.]]></description>
</item>
<item>
	<title><![CDATA[MAX706TESA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/monitoring-and-resetting-chips/">Power-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monitoring-and-resetting-chips/max706tesa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:33:03</pubDate>
	<description><![CDATA[This SOP-8 packaged monitoring and reset chip is designed specifically for 5 to 5.5V power supply systems, providing precise voltage monitoring functionality. The reset threshold can be adjusted within the range of 3V to 3.15V. When the power supply voltage is detected to be below the preset threshold, a low-level effective reset signal will be immediately triggered to ensure that the system can quickly and accurately restart in case of power abnormalities, avoiding operational failures. As a single power supply voltage monitoring scheme, this device is widely used in microprocessors and embedded systems, providing critical power protection mechanisms to ensure stable and reliable operation of the equipment at all times.]]></description>
</item>
<item>
	<title><![CDATA[LMV358IDR(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/lmv358idr-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:32:56</pubDate>
	<description><![CDATA[This dual operational amplifier adopts standard SOP-8 packaging and has excellent electrical performance. Its input offset voltage is only 7mV, ensuring high-precision signal processing capability. Meanwhile, the ultra-low input bias current of 50pA effectively reduces system error and enhances stability. The swing rate is as high as 1V/us, endowing the device with fast response characteristics, suitable for various applications that require high performance, low noise, and high-speed signal amplification. It is an ideal choice for designers to build accurate analog circuits.]]></description>
</item>
<item>
	<title><![CDATA[LMV724M(SOP-14)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/lmv724m-sop-14-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:32:50</pubDate>
	<description><![CDATA[This dual operational amplifier adopts a compact SOP-14 package, which has excellent performance. Its ultra-low input offset voltage of 5mV ensures extremely high signal accuracy; Amazing 1pA input bias current effectively reduces system error and significantly reduces power consumption. The high-pressure swing rate design of 7.5V/us ensures excellent performance in high-speed signal processing. Whether for precision measurement or high-speed data acquisition applications, this operational amplifier can provide unparalleled performance.]]></description>
</item>
<item>
	<title><![CDATA[MAX3485EESA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/rs485rs422/">RS485/RS422</category>
	<link><![CDATA[http://www.hxymos.com/en/rs485rs422/max3485eesa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:32:43</pubDate>
	<description><![CDATA[This RS485/RS422 compatible transceiver chip adopts a sophisticated SOP-8 packaging, designed specifically for embedded communication applications. It can achieve a data transfer rate of up to 12Mbps under 3.3V power supply, providing excellent performance. Built in single channel driver and single channel receiver (1/1 configuration), ensuring long-distance and high reliability bidirectional communication. Suitable for IoT devices in harsh environments and other low-voltage and high-efficiency communication system requirements.]]></description>
</item>
<item>
	<title><![CDATA[MAX232CSE(SOP-16)]]></title>
	<category domain="http://www.hxymos.com/en/rs232/">RS232</category>
	<link><![CDATA[http://www.hxymos.com/en/rs232/max232cse-sop-16-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:32:36</pubDate>
	<description><![CDATA[This RS232 transceiver chip is packaged in SOP-16 and designed specifically for high-speed serial communication applications. Integrating 2 drivers and 2 receiver channels, it can achieve a maximum data transmission rate of 120Kbps under a 5V power supply voltage, ensuring stable and reliable full duplex communication performance. Suitable for embedded systems and various electronic products that require compatibility with RS232 interfaces, it simplifies wiring and improves data exchange efficiency, making it an ideal choice for building efficient communication systems.]]></description>
</item>
<item>
	<title><![CDATA[LMV721IDBVR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/lmv721idbvr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:32:30</pubDate>
	<description><![CDATA[This single channel operational amplifier adopts a compact SOT-23-5L package, which has excellent electrical performance. Its input offset voltage is as low as 5mV, ensuring higher accuracy and stability. Having an ultra-low input bias current of 260nA, effectively reducing errors and expanding application range. In addition, the device has a high swing rate of 5.25V/us, ensuring fast response and excellent signal processing capabilities, making it an ideal choice for various high-precision and high-speed electronic circuits.]]></description>
</item>
<item>
	<title><![CDATA[MAX232EESE(SOP-16)]]></title>
	<category domain="http://www.hxymos.com/en/rs232/">RS232</category>
	<link><![CDATA[http://www.hxymos.com/en/rs232/max232eese-sop-16-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:32:23</pubDate>
	<description><![CDATA[This high-performance RS232 chip adopts SOP-16 packaging, designed specifically for reliable serial communication. As a full duplex transceiver, it can support a data transmission rate of up to 120Kbps under a 5V power supply voltage, with built-in 2 drivers and 2 receiver channels, ensuring efficient and stable bidirectional data exchange. Suitable for embedded systems and various devices that require RS232 interfaces, it effectively simplifies circuit design and improves communication quality, making it an ideal choice for modern communication technology.]]></description>
</item>
<item>
	<title><![CDATA[OPA2333AIDR(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/opa2333aidr-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:32:16</pubDate>
	<description><![CDATA[This dual precision operational amplifier adopts a compact SOP-8 package, specifically designed for high-precision applications. It has an ultra-low 2uV input offset voltage and an input bias current of only 70pA, ensuring extreme signal accuracy and extremely low noise performance. Although the slewing rate is designed to be 0.16V/us, emphasizing stable and smooth response characteristics, it performs outstandingly in the fields of slow signal processing and weak signal detection, making it an ideal core device for high-precision measurement and control systems.]]></description>
</item>
<item>
	<title><![CDATA[MAX485EESA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/rs485rs422/">RS485/RS422</category>
	<link><![CDATA[http://www.hxymos.com/en/rs485rs422/max485eesa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:32:10</pubDate>
	<description><![CDATA[This high-performance RS485/RS422 transceiver chip is packaged in a compact SOP-8 package, supporting data rates of up to 2.5Mbps, ensuring fast and reliable data transmission. Built in dual channel driver and receiver (2/2 configuration), stable operation under 5V power supply voltage, suitable for long-distance, multi node network communication systems and other harsh environmental applications, providing excellent EMC anti-interference performance and low power consumption characteristics.]]></description>
</item>
<item>
	<title><![CDATA[OPA333AIDBVR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/opa333aidbvr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:32:03</pubDate>
	<description><![CDATA[This single channel precision operational amplifier is designed for high-precision applications using a small SOT-23-5L package. It has an ultra-low 2uV input offset voltage and an input bias current of only 70pA, ensuring excellent accuracy and extremely low noise performance. Although the slewing rate of 0.16V/us provides a stable and smooth response speed, it performs well in low-speed signal processing and high-precision measurement fields, making it an ideal choice for applications with strict accuracy requirements.]]></description>
</item>
<item>
	<title><![CDATA[DS18B20U(MSOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/temperature-sensor/">Sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/temperature-sensor/ds18b20u-msop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:31:56</pubDate>
	<description><![CDATA[This high-precision temperature sensor packaged in MSOP-8 is known for its excellent measurement accuracy of ± 0.4 ℃, especially suitable for applications with strict temperature control requirements. The working temperature range covers a wide range of -10 ℃ to 70 ℃, and can accurately monitor and collect temperature data of various environments and equipment. This device is suitable for temperature monitoring and control, ensuring stable and reliable performance over a wide temperature range.]]></description>
</item>
<item>
	<title><![CDATA[MAX3232ESE(SOP-16)]]></title>
	<category domain="http://www.hxymos.com/en/rs232/">RS232</category>
	<link><![CDATA[http://www.hxymos.com/en/rs232/max3232ese-sop-16-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:31:50</pubDate>
	<description><![CDATA[This RS232 transceiver chip adopts SOP-16 packaging, which is an efficient serial communication solution. It has the ability to transmit data through a single channel, supports a data rate of 120Kbps, and can operate stably under a power supply voltage of 3.3V or 5V. As a fully functional transceiver, it contains one driver and one receiver, suitable for embedded systems and various application scenarios that require RS232 interfaces. The combination of flexible voltage compatibility and high-speed data processing performance makes this chip an ideal component for building modern communication systems.]]></description>
</item>
<item>
	<title><![CDATA[LM75BDP(MSOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/temperature-sensor/">Sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/temperature-sensor/lm75bdp-msop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:31:43</pubDate>
	<description><![CDATA[This precision MSOP-8 packaged temperature sensor has a high-precision measurement capability of ± 3 ℃, designed specifically for narrow spaces to achieve efficient temperature control. The working temperature range covers 55 ℃ to+125 ℃, widely applicable for temperature monitoring and data collection applications in various harsh environments, ensuring accurate and reliable operation of the system within a wide temperature range.]]></description>
</item>
<item>
	<title><![CDATA[LM2596S-3.3(TO-263-5L)]]></title>
	<category domain="http://www.hxymos.com/en/dc-dc-power-chip/">DC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/dc-dc-power-chip/lm2596s-3-3-to-263-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 02:31:36</pubDate>
	<description><![CDATA[This high-quality DC-DC power chip adopts TO263-5L packaging, designed specifically for handling high voltage and high current applications. As a powerful step-down power management component, its input voltage range is as wide as 40V, which can effectively stabilize the high voltage to 3.3V and provide a maximum continuous output current of 3A. This chip has excellent linear adjustment rate, load adjustment rate, and high efficiency performance, ensuring excellent performance in various stable low-voltage and high current scenarios such as communication systems. It is an ideal choice for optimizing energy utilization and improving system efficiency.]]></description>
</item>
<item>
	<title><![CDATA[FMMT618(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/fmmt618-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 01:50:22</pubDate>
	<description><![CDATA[This SOT-23 package NPN type transistor has a high breakdown voltage of 20V VCEO and a powerful 2.5A collector current carrying capacity. It has a wide amplification range (300-600) and is particularly suitable for high current and high-performance electronic systems, providing excellent signal amplification performance.]]></description>
</item>
<item>
	<title><![CDATA[FMMT718(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/fmmt718-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 01:50:12</pubDate>
	<description><![CDATA[This SOT-23 package PNP type transistor has a 20V VCEO voltage and a continuous collector current of up to 1.5A, with a wide amplification range (300-600), especially suitable for high gain and high current applications, providing excellent signal amplification performance.]]></description>
</item>
<item>
	<title><![CDATA[FMMT720(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/fmmt720-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 01:50:03</pubDate>
	<description><![CDATA[This SOT-23 packaged PNP transistor has a 40V high breakdown voltage VCEO and a 1.5A high current carrying capacity, with an amplification factor of up to 300 to 480. It is particularly suitable for electronic circuits that require high gain and high current processing capabilities, providing excellent signal amplification function.]]></description>
</item>
<item>
	<title><![CDATA[FMMT591(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/fmmt591-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 01:49:54</pubDate>
	<description><![CDATA[This SOT-23 package PNP type transistor has a 60V high voltage VCEO and 1A high current processing capability, with an amplification factor in the range of 100 to 300, suitable for high voltage and high current application scenarios, providing efficient and stable signal amplification and switching control for your electronic design.]]></description>
</item>
<item>
	<title><![CDATA[FMMT493(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/fmmt493-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 01:49:44</pubDate>
	<description><![CDATA[This SOT-23 packaged high-performance NPN transistor has a 100V high voltage VCEO and 1A high current carrying capacity, with an amplification factor between 100 and 300. It is particularly suitable for high voltage and high current application environments, providing powerful and stable signal amplification function.]]></description>
</item>
<item>
	<title><![CDATA[FMMT491(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/fmmt491-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 01:49:35</pubDate>
	<description><![CDATA[This SOT-23 package NPN type transistor has a high breakdown voltage of 60V VCEO and a high current carrying capacity of 1A. The amplification range is between 100 and 300, suitable for various high current and high voltage electronic devices, providing strong and stable signal amplification performance.]]></description>
</item>
<item>
	<title><![CDATA[SS8050W(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/ss8050w-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 01:49:26</pubDate>
	<description><![CDATA[This SOT-323 packaged NPN type transistor has a 25V VCEO voltage and a collector current capacity of up to 1.5A, with amplification factors ranging from 200 to 350. It is particularly suitable for providing powerful and stable signal amplification function in low voltage and high current application environments.]]></description>
</item>
<item>
	<title><![CDATA[MMDT5401(SOT-363)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mmdt5401-sot-363-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 01:49:16</pubDate>
	<description><![CDATA[This SOT-363 packaged dual PNP transistor has a 150V high voltage VCEO and 0.2A collector current capacity per unit, with an amplification range of 100 to 300. It is designed specifically for high voltage and low power applications and is an ideal choice for building efficient complementary circuits.]]></description>
</item>
<item>
	<title><![CDATA[BC857C(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bc857c-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 01:49:07</pubDate>
	<description><![CDATA[This SOT-23 packaged PNP transistor has a 45V high voltage VCEO and 0.1A collector current capability, with an amplification factor of up to 420 to 800. It is particularly suitable for applications that require extremely high gain and provides powerful signal amplification function for precision electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[MMDT5551(SOT-363)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mmdt5551-sot-363-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 01:48:57</pubDate>
	<description><![CDATA[This SOT-363 packaged dual NPN transistor has a 160V high voltage VCEO and 0.2A collector current capability, with an amplification factor between 100 and 300. It is designed specifically for signal amplification in high-voltage environments and is suitable for various precision electronic devices, providing excellent linear amplification performance.]]></description>
</item>
<item>
	<title><![CDATA[MMDT3904(SOT-363)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mmdt3904-sot-363-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 01:48:48</pubDate>
	<description><![CDATA[This SOT-363 packaged dual NPN transistor has a 40V VCEO withstand voltage and a maximum collector current of 0.2A per NPN unit, with amplification factors ranging from 100 to 300. It is suitable for efficient complementary circuit design and provides accurate and stable signal amplification performance for your system.]]></description>
</item>
<item>
	<title><![CDATA[MMDT3946(SOT-363)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mmdt3946-sot-363-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 01:48:39</pubDate>
	<description><![CDATA[This SOT-363 packaged NPN+PNP bipolar transistor has a single unit with a 40V VCEO and a maximum collector current of 0.2A, with amplification factors ranging from 100 to 300. It is suitable for various complementary symmetric circuit designs and provides efficient and accurate signal amplification and inversion functions.]]></description>
</item>
<item>
	<title><![CDATA[MMDT3906(SOT-363)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mmdt3906-sot-363-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 01:48:29</pubDate>
	<description><![CDATA[This SOT-363 packaged dual PNP transistor has a 40V VCEO and 0.2A IC for each PNP unit, with amplification factors ranging from 100 to 300. It is suitable for precision signal processing and low-power circuit design, providing excellent symmetrical amplification function.]]></description>
</item>
<item>
	<title><![CDATA[BAV99S(SOT-363)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bav99s-sot-363-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 12:56:26</pubDate>
	<description><![CDATA[This SOT-363 packaged switch diode optimizes circuit layout with its compact size. Capable of withstanding 75V reverse voltage and handling 0.15A forward current, with a forward conduction voltage drop VF as low as 1.25V, effectively improving system energy efficiency. Suitable for power conversion, signal switching, and high-efficiency protection circuit applications in various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BAS321(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bas321-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 12:56:17</pubDate>
	<description><![CDATA[This high-performance switching diode adopts a compact SOD-323 package, which is particularly suitable for circuit designs with limited space. It has a reverse withstand voltage of up to 250V and a forward current capacity of 0.25A, while also having an excellent forward conduction voltage of 1.25V VF, ensuring low loss and efficient operation. Suitable for fields such as power conversion, high-frequency switches, and electronic device protection.]]></description>
</item>
<item>
	<title><![CDATA[BAV99W(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bav99w-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 12:56:08</pubDate>
	<description><![CDATA[This switch diode is packaged in SOT-323 and has a compact size, making it suitable for high-density circuit board design. Its features include a reverse voltage of 75V, a forward current of 0.15A, and a low forward voltage drop of 1.25V VF, ensuring excellent performance and energy efficiency in switch applications. It is widely used in power management, signal switching, and protection circuits for various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BAV16W(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bav16w-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 12:55:59</pubDate>
	<description><![CDATA[This switch diode adopts a small SOD-123 package, designed specifically for compact circuits. It has a rated reverse voltage of 80V and a forward current capacity of 0.15A. Its low forward voltage drop VF is only 1.25V, ensuring high efficiency and low loss. It is suitable for power conversion, protection circuits, and switch applications in portable devices.]]></description>
</item>
<item>
	<title><![CDATA[BAT54SW(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bat54sw-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 12:55:50</pubDate>
	<description><![CDATA[This Schottky diode, packaged in SOT-323, has a reverse withstand voltage of 30V and a forward current capacity of 0.2A. Its forward conduction voltage VF is 1V, making it suitable for low-power and small signal rectification applications. The compact design makes it an ideal choice for portable devices, power management modules, and precision electronic circuits.]]></description>
</item>
<item>
	<title><![CDATA[BAT46WS(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bat46ws-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 12:55:41</pubDate>
	<description><![CDATA[This SOD-323 packaged Schottky diode has a high reverse withstand voltage of 100V and a forward current carrying capacity of 0.15A. Its forward conduction voltage VF is 1V, making it particularly suitable for low-power and small signal rectification applications. The compact packaging design makes it an ideal choice for various portable devices, power conversion modules, and battery protection circuits.]]></description>
</item>
<item>
	<title><![CDATA[RB520S-30(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/rb520s-30-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 12:55:32</pubDate>
	<description><![CDATA[This SOD-523 packaged Schottky diode has a 30V reverse withstand voltage and a 0.2A forward current carrying capacity. Its forward conduction voltage VF is as low as 0.6V, ensuring efficient rectification in low voltage differential and small signal applications. Suitable for compact power supply designs, battery protection circuits, and other electronic devices that require low power consumption and fast recovery performance.]]></description>
</item>
<item>
	<title><![CDATA[RB551V-30(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/rb551v-30-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 12:55:23</pubDate>
	<description><![CDATA[This SOD-323 packaged Schottky diode has 30V reverse withstand voltage and 0.5A forward current processing capability. Its excellent forward conduction voltage VF is as low as 0.47V, ensuring outstanding performance in low voltage differential and high efficiency applications. Suitable for designing battery protection circuits, power adapters, and small electronic devices that require efficient rectification.]]></description>
</item>
<item>
	<title><![CDATA[RB521S-30(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/rb521s-30-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 12:55:14</pubDate>
	<description><![CDATA[This SOD-523 packaged Schottky diode has a reverse withstand voltage of 30V and a forward current capacity of 0.2A. Its ultra-low forward conduction voltage VF is only 0.5V, making it particularly suitable for low voltage differential and high-efficiency rectification applications. The miniaturization design makes it an ideal choice for portable devices, power converters, and battery protection circuits.]]></description>
</item>
<item>
	<title><![CDATA[PESD5V0F1BL(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/pesd5v0f1bl-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:50:28</pubDate>
	<description><![CDATA[This DFN1006-2L packaged bidirectional ESD electrostatic protection diode is designed to provide efficient anti-static protection for 5V systems. Adopting a compact 1-channel design, it has an ultra-low junction capacitance of 0.35pF, ensuring excellent signal integrity in high-speed data transmission. The peak pulse current IPP reaches 4A, which can effectively absorb and suppress bidirectional transient ESD impacts, prevent damage to sensitive electronic components, and is an ideal ESD protection solution for modern portable devices, high-speed interfaces, and high-density circuit boards.]]></description>
</item>
<item>
	<title><![CDATA[LESD5D5.0CT1G(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/lesd5d5-0ct1g-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:50:18</pubDate>
	<description><![CDATA[This SOD-523 packaged bidirectional ESD electrostatic protection diode provides excellent protection for 5V systems, with a single channel design that can efficiently suppress bidirectional transient ESD impacts. The device has a 9A peak pulse current IPP capability and controls the junction capacitance as low as 15pF to ensure signal integrity is maintained during high-speed data transmission. It is an ideal choice for highly integrated electronic devices, providing excellent anti-static interference performance for I/O interfaces.]]></description>
</item>
<item>
	<title><![CDATA[PESD3V3S2UT(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/pesd3v3s2ut-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:49:59</pubDate>
	<description><![CDATA[This SOT-23 packaged unidirectional ESD electrostatic protection diode is suitable for 3.3V systems and provides dual channel protection. Each channel can withstand a peak pulse current IPP of up to 11A, effectively resisting unidirectional electrostatic discharge impacts. The device has a junction capacitance as low as 100pF, ensuring high-speed data interface signal quality and providing excellent anti-static interference capability for modern highly integrated electronic devices, making it an ideal multi line ESD protection solution.]]></description>
</item>
<item>
	<title><![CDATA[ESD5B5.0ST1G(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd5b5-0st1g-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:49:50</pubDate>
	<description><![CDATA[This SOD-523 packaged bidirectional ESD electrostatic protection diode is designed to provide efficient protection for 5V systems. Equipped with a 1-channel design, capable of withstanding peak pulse current IPP of up to 11A, effectively resisting bidirectional transient ESD impacts. A junction capacitance of only 20pF ensures signal integrity during high-speed data transmission, making it an ideal choice for electronic devices with high integration and low interference requirements, providing excellent electrostatic protection performance for sensitive circuits.]]></description>
</item>
<item>
	<title><![CDATA[PESD12VL1BA(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/pesd12vl1ba-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:49:40</pubDate>
	<description><![CDATA[This SOD-323 packaged bidirectional ESD electrostatic protection diode is designed specifically for 12V systems, providing excellent single channel transient protection. Having a peak pulse current IPP capability of up to 15A, it can effectively absorb and suppress bidirectional electrostatic discharge, ensuring that electronic devices are protected from overvoltage shocks. A junction capacitance as low as 20pF ensures uninterrupted high-speed signal transmission, making it an ideal ESD protection solution for high reliability and high-speed interfaces.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ6.8CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj6-8ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:49:31</pubDate>
	<description><![CDATA[This SMB packaged bidirectional TVS transient suppression diode is suitable for 5.8V operating voltage systems and provides powerful single channel transient protection. With excellent peak pulse current IPP capability of 57.1A, it can efficiently absorb and clamp bidirectional transient voltage, preventing overvoltage damage. The junction capacitance as low as 10.5pF ensures excellent signal integrity on high-speed signal lines, making it an ideal ESD and surge protection component for high-power, high-speed interfaces.]]></description>
</item>
<item>
	<title><![CDATA[SM05T1G(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/sm05t1g-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:49:22</pubDate>
	<description><![CDATA[This SOT-23 package is a unidirectional ESD electrostatic protection diode designed specifically for 5V systems, with dual channel protection capability. Each channel can withstand a peak pulse current IPP of 10A, effectively preventing damage to the circuit caused by electrostatic discharge. The 60pF junction capacitance ensures low interference in high-speed signal transmission and is suitable for demanding interface protection. It is an ideal integrated multi line ESD solution, ensuring that your electronic devices are not threatened by static electricity.]]></description>
</item>
<item>
	<title><![CDATA[LESD3Z5.0CMT1G(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/lesd3z5-0cmt1g-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:49:12</pubDate>
	<description><![CDATA[This SOD-323 packaged bidirectional ESD electrostatic protection diode is designed to provide efficient protection for 5V systems. Equipped with a 1-channel design and a peak pulse current IPP of up to 11A, it can effectively suppress bidirectional transient ESD impacts under extreme conditions. Its junction capacitance as low as 20pF ensures excellent signal integrity on high-speed data lines, making it an ideal choice for modern highly integrated and anti-static electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[UAD8C05L01(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/uad8c05l01-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:49:03</pubDate>
	<description><![CDATA[This high-performance bidirectional ESD electrostatic protection diode packaged in DFN1006-2L is designed specifically for 5V systems and features an advanced 1-channel structure with an ultra-low capacitance of 0.35pF, ensuring high-speed signal lossless transmission. The device has excellent transient suppression capability, with a peak pulse current IPP of up to 4A, effectively resisting bidirectional electrostatic discharge impacts and protecting sensitive electronic devices from ESD damage. It is an ideal protection choice for high-speed interfaces and compact circuits.]]></description>
</item>
<item>
	<title><![CDATA[PESD5V2S2UT(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/pesd5v2s2ut-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:48:54</pubDate>
	<description><![CDATA[This SOT-23 package features a unidirectional ESD electrostatic protection diode, specifically designed to provide dual channel protection for 5V systems. Each channel can withstand a peak pulse current IPP of up to 10A, effectively preventing damage to the circuit caused by electrostatic discharge. The 60pF junction capacitance ensures good signal transmission performance on high-speed data lines. This device is an ideal choice for highly integrated electronic devices and interfaces, providing excellent electrostatic protection solutions for both signal paths simultaneously.]]></description>
</item>
<item>
	<title><![CDATA[HT7525-1(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7525-1-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:32:45</pubDate>
	<description><![CDATA[This SOT-89 package LDO linear regulator is designed specifically for low to medium power electronic devices, providing a stable 2.5V output voltage (Vout) and 0.1A current (Iout). Supports up to 30V input voltage (Vin (Max)), achieving efficient and low-noise power conversion over a wide voltage range, making it an ideal choice for embedded systems and miniaturized applications.]]></description>
</item>
<item>
	<title><![CDATA[HT7136-1(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7136-1-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:32:38</pubDate>
	<description><![CDATA[This SOT-89 package LDO linear regulator features a constant output voltage of 3.6V (Vout) and a current of 0.05A (Iout), suitable for low-power electronic devices. Supports up to 30V input voltage (Vin (Max)), ensuring efficient and stable power conversion over a wide voltage range, making it an ideal power management solution for precision embedded systems and miniaturized applications.]]></description>
</item>
<item>
	<title><![CDATA[HT7144-1(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7144-1-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:32:30</pubDate>
	<description><![CDATA[This SOT-89 package LDO linear regulator is designed specifically for precision electronic devices, providing a stable 4.4V output voltage (Vout) and 0.05A current (Iout), suitable for low-power application scenarios. Supports up to 30V input voltage (Vin (Max)), achieving efficient and low-noise power conversion over a wide voltage range, making it an ideal choice for embedded systems and miniaturized products.]]></description>
</item>
<item>
	<title><![CDATA[HT7350-1(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7350-1-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:32:23</pubDate>
	<description><![CDATA[This SOT-23 package LDO linear regulator is designed to provide a stable 5V output voltage (Vout) and 0.3A current (Iout), suitable for various types of low to medium power electronic devices. Supports up to 18V input voltage (Vin (Max)), achieving efficient and reliable power conversion over a wide voltage range, making it an ideal power management module for embedded systems and small electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HT7333-1(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7333-1-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:32:15</pubDate>
	<description><![CDATA[This SOT-23 package LDO linear regulator provides a stable 3.3V output voltage (Vout) and 0.3A current (Iout), suitable for low to medium power electronic devices. Supports up to 18V input voltage (Vin (Max)), achieving efficient and low-noise power conversion over a wide voltage range, making it an ideal power management solution for embedded systems and small portable devices.]]></description>
</item>
<item>
	<title><![CDATA[HT7336-1(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7336-1-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:32:08</pubDate>
	<description><![CDATA[This SOT-89 package LDO linear regulator is designed for stable output of 3.6V voltage (Vout) and 0.3A current (Iout), suitable for various types of low to medium power electronic devices. Supports a maximum input voltage of 18V (Vin (Max)), enabling efficient and stable power conversion over a wide voltage range, making it an ideal power management component for embedded systems and small electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HT7350-1(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7350-1-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:32:00</pubDate>
	<description><![CDATA[This SOT-89 package LDO linear regulator is designed to provide a stable 5V output voltage (Vout) and 0.3A current (Iout), suitable for various types of low to medium power electronic devices. Supports a maximum input voltage of 18V (Vin (Max)), ensuring efficient and reliable power conversion over a wide voltage range, making it an ideal power supply solution for embedded systems and small electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HT7330-1(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7330-1-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:31:53</pubDate>
	<description><![CDATA[This SOT-89 package LDO linear regulator has a constant output voltage of 3V (Vout) and a current of 0.3A (Iout), designed specifically for low to medium power electronic devices. Supports up to 18V input voltage (Vin (Max)), achieving efficient and stable power conversion over a wide voltage range, making it an ideal power management solution for embedded systems and small electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HT7344-1(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7344-1-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:31:45</pubDate>
	<description><![CDATA[This SOT-89 package LDO linear regulator is designed to provide a stable 4.4V output voltage (Vout) and 0.3A current (Iout), suitable for various types of low to medium power electronic devices. Supports up to 18V input voltage (Vin (Max)), achieving efficient and low-noise power conversion over a wide voltage range, making it an ideal power supply choice for embedded systems and small devices.]]></description>
</item>
<item>
	<title><![CDATA[HT7540-1(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7540-1-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:31:38</pubDate>
	<description><![CDATA[This SOT-89 package LDO linear regulator provides a stable 4V output voltage (Vout) and a maximum 0.1A current (Iout), suitable for low-power electronic devices. Supporting input voltages up to 30V (Vin (Max)), ensuring efficient and reliable power conversion over a wide voltage range, it is an ideal power management solution for embedded systems and small electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HT7830(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7830-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:31:30</pubDate>
	<description><![CDATA[This SOT-89 package LDO linear regulator is designed for efficient power supply, providing a stable 3V output voltage (Vout) and supporting currents up to 0.45A (Iout). The maximum input voltage is 12V (Vin (Max)), ensuring low noise and high stability power conversion within a limited voltage range, suitable for various low to medium power electronic devices and embedded systems.]]></description>
</item>
<item>
	<title><![CDATA[LM317LIPK(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/lm317lipk-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:31:23</pubDate>
	<description><![CDATA[This SOT-89 package LDO linear regulator has a wide range of adjustable output voltage (Vout) from 1.2 to 37V and a maximum current of 0.1A (Iout). Supporting input voltages up to 40V (Vin (Max)), suitable for various voltage demand scenarios, achieving efficient and stable power conversion, making it an ideal choice for various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[XC6201P332PR(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/xc6201p332pr-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:31:15</pubDate>
	<description><![CDATA[This SOT-89 package LDO linear regulator is designed to provide a stable 3.3V output voltage (Vout) and 0.3A current (Iout) to meet the power supply requirements of low-power electronic devices. Supports a maximum input voltage of 12V (Vin (Max)), ensuring efficient and low ripple power conversion over a wide voltage range, making it an ideal choice for embedded systems and portable devices.]]></description>
</item>
<item>
	<title><![CDATA[HT7250(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7250-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:31:07</pubDate>
	<description><![CDATA[This SOT-89 package LDO linear regulator is designed to provide stable 5V output voltage (Vout) and 0.3A current (Iout) for various electronic devices, ensuring efficient and accurate power supply. Supports a maximum input voltage of 10V (Vin (Max)), suitable for embedded systems and small electronic devices, achieving stable and reliable power conversion within a limited voltage range.]]></description>
</item>
<item>
	<title><![CDATA[XC6201P302MR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/xc6201p302mr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:31:00</pubDate>
	<description><![CDATA[This SOT-23-5L packaged LDO linear regulator provides precise 3V output voltage (Vout) and supports a maximum current of 0.3A (Iout), suitable for low-power electronic devices. Its maximum input voltage is 12V (Vin (Max)), which can achieve efficient and stable power conversion within a limited voltage range, making it an ideal power management solution for small embedded systems and portable devices.]]></description>
</item>
<item>
	<title><![CDATA[HT7836(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7836-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:30:52</pubDate>
	<description><![CDATA[This SOT-89 package LDO linear regulator is designed specifically for medium power applications, providing a stable 3.6V output voltage (Vout) and continuously supplying 0.45A current (Iout). Supporting a maximum input voltage of 12V (Vin (Max)), achieving efficient and low-noise power conversion within a limited voltage range, it is an ideal power supply solution for various embedded systems and electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[XC6201P332MR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/xc6201p332mr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:30:45</pubDate>
	<description><![CDATA[This SOT-23-5L packaged LDO linear regulator is designed for miniaturized applications, providing a stable 3.3V output voltage (Vout) and 0.3A current (Iout), suitable for low-power electronic devices. The maximum input voltage is 12V (Vin (Max)), ensuring efficient and accurate power conversion within a limited voltage range, making it an ideal power management component for embedded systems and portable devices.]]></description>
</item>
<item>
	<title><![CDATA[HT7233(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7233-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:30:37</pubDate>
	<description><![CDATA[This SOT-89 package LDO linear regulator has a constant output voltage of 3.3V (Vout) and a current of 0.3A (Iout), providing efficient and stable power supply for low-power electronic devices. Supports a maximum input voltage of 10V (Vin (Max)), achieving precise power conversion within a limited voltage range, making it an ideal power management solution for embedded systems and small portable devices.]]></description>
</item>
<item>
	<title><![CDATA[HT7850(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7850-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:30:30</pubDate>
	<description><![CDATA[This SOT-89 package LDO linear regulator is designed to provide stable 5V output voltage (Vout) and up to 0.45A current (Iout), suitable for various types of medium power electronic devices. The maximum input voltage is 12V (Vin (Max)), achieving efficient and low-noise power conversion within a limited voltage range, making it an ideal power solution for embedded systems and small electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HT7833(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7833-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:30:22</pubDate>
	<description><![CDATA[This SOT-89 package LDO linear regulator is designed specifically for medium power requirements, providing a constant 3.3V output voltage (Vout) and up to 0.45A current (Iout) to ensure stable power supply for electronic devices. Supports a maximum input voltage of 12V (Vin (Max)), achieving efficient and low-noise power conversion within a limited voltage range, suitable for various embedded and mobile applications.]]></description>
</item>
<item>
	<title><![CDATA[HT7236(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7236-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:30:15</pubDate>
	<description><![CDATA[This SOT-89 package LDO linear regulator has a precise 3.6V output voltage (Vout) and 0.3A current (Iout), making it particularly suitable for providing stable power supply for small low-power electronic devices. Supports a maximum input voltage of 10V (Vin (Max)), ensuring efficient and stable power conversion within a limited voltage range, making it an ideal choice for embedded systems and portable applications.]]></description>
</item>
<item>
	<title><![CDATA[L78L33ACUTR(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/l78l33acutr-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:30:07</pubDate>
	<description><![CDATA[This SOT-89 package LDO linear regulator provides precise 3.3V output voltage (Vout) and 0.1A current (Iout), designed specifically for low-power electronic devices. Supports up to 30V input voltage (Vin (Max)), achieving efficient and stable power conversion over a wide voltage range. With a compact size, it is an ideal power management solution for various embedded systems and portable devices.]]></description>
</item>
<item>
	<title><![CDATA[LM317LDR2G(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/lm317ldr2g-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:30:00</pubDate>
	<description><![CDATA[This SOP-8 packaged LDO linear regulator has a wide range of adjustable output voltage (Vout) from 1.2 to 37V and a maximum current of 0.1A (Iout), suitable for various voltage requirements. Supporting input voltages up to 40V (Vin (Max)), achieving efficient and stable power conversion over a wide voltage range, is an ideal power management solution for low-power precision electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[MC79L05ACDR(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mc79l05acdr-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:29:52</pubDate>
	<description><![CDATA[This SOP-8 packaged LDO linear regulator is designed specifically for negative voltage applications, providing precise -5V output voltage (Vout) and maximum 0.1A current (Iout), suitable for electronic devices that require stable negative power supply. Compatible with a maximum input voltage of 30V (Vin (Max)), achieving efficient and stable negative voltage conversion over a wide voltage range, it is an ideal negative power management solution for precision circuits.]]></description>
</item>
<item>
	<title><![CDATA[LM317DCYR(SOT-223)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/lm317dcyr-sot-223-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:29:45</pubDate>
	<description><![CDATA[This SOT-223 package LDO linear regulator has an adjustable output voltage (Vout) of 1.2 to 37V and a maximum current of 1.5A (Iout), which can flexibly adapt to various voltage requirements. Supporting input voltages up to 40V (Vin (Max)), achieving efficient and stable power conversion over a wide voltage range, is an ideal power management solution for high-power electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[MC78L05ACDR2G(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mc78l05acdr2g-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:29:37</pubDate>
	<description><![CDATA[This SOP-8 package LDO linear regulator provides precise 5V output voltage (Vout) and maximum 0.1A current (Iout), designed specifically for low-power electronic devices. Compatible with a maximum input voltage of 30V (Vin (Max)), maintaining efficient and stable power conversion performance over a wide voltage range, it is an ideal power management component for high-precision circuits.]]></description>
</item>
<item>
	<title><![CDATA[L78L33ACD13TR(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/l78l33acd13tr-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:29:30</pubDate>
	<description><![CDATA[This SOP-8 packaged LDO linear regulator is designed to stabilize power supply requirements, providing a constant 5V output voltage (Vout) and a maximum 0.1A current (Iout), especially suitable for low-power electronic devices. Supporting input voltages up to 30V (Vin (Max)), achieving efficient and low-noise power conversion over a wide voltage range, is an ideal power management solution for precision circuits.]]></description>
</item>
<item>
	<title><![CDATA[MC78L15ACDR2G(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mc78l15acdr2g-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:29:22</pubDate>
	<description><![CDATA[This SOP-8 packaged LDO linear regulator is designed for stable output, providing precise 15V voltage (Vout) and 0.1A current (Iout), suitable for various low-power electronic devices. The maximum input voltage reaches 35V (Vin (Max)), ensuring efficient and stable power conversion over a wide voltage range, making it an ideal choice for precision power management systems.]]></description>
</item>
<item>
	<title><![CDATA[LM317MDT(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/lm317mdt-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:29:15</pubDate>
	<description><![CDATA[This TO-252-2L packaged LDO linear regulator has an adjustable output voltage (Vout) of 1.2 to 37V and up to 1.5A continuous current (Iout), meeting various voltage requirements. Supports a maximum input voltage of 40V (Vin (Max)), achieving efficient and stable power conversion over a wide voltage range, making it an ideal power solution for high-power electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[MC78L12ACDR2G(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mc78l12acdr2g-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:29:07</pubDate>
	<description><![CDATA[This SOP-8 packaged LDO linear regulator is designed for stable power supply, providing precise 12V output voltage (Vout) and 0.1A current (Iout), suitable for various low-power electronic devices. Supports a maximum input voltage of 35V (Vin (Max)), ensuring efficient and low-noise power conversion over a wide voltage range, making it an ideal choice for precision power management.]]></description>
</item>
<item>
	<title><![CDATA[LD1117-ADJ(SOT-223)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ld1117-adj-sot-223-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:29:00</pubDate>
	<description><![CDATA[This SOT-223 packaged LDO linear regulator provides adjustable output voltage (Vout) of 1.2 to 37V and up to 1A current (Iout), suitable for electronic devices with various voltage requirements. The maximum input voltage is 18V (Vin (Max)), achieving efficient and stable wide range power conversion within a limited voltage range, making it an ideal choice for high flexibility power supply solutions.]]></description>
</item>
<item>
	<title><![CDATA[MC79L15ACDR2G(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/mc79l15acdr2g-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:28:52</pubDate>
	<description><![CDATA[This SOP-8 packaged LDO linear regulator is designed specifically for negative voltage requirements, providing a stable -15V output voltage (Vout) and 0.1A current (Iout), suitable for various precision electronic devices. The maximum input voltage can reach 30V (Vin (Max)), ensuring efficient and low noise negative voltage conversion over a wide voltage range, making it an ideal solution for high-precision power management.]]></description>
</item>
<item>
	<title><![CDATA[XC6206P182MR(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/xc6206p182mr-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:28:45</pubDate>
	<description><![CDATA[This SOT-23 package LDO linear regulator has a precise output voltage of 1.8V (Vout) and a current of 0.3A (Iout), designed specifically for low-power devices. Supports a maximum input voltage of 6.5V (Vin (Max)), providing efficient and stable power conversion within a limited voltage range, especially suitable for portable electronic devices with strict requirements for size and energy consumption.]]></description>
</item>
<item>
	<title><![CDATA[AMS1117-1.2(SOT-223)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ams1117-1-2-sot-223-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:28:37</pubDate>
	<description><![CDATA[This SOT-223 packaged LDO linear regulator is designed specifically for high-performance systems, providing a stable 1.2V output voltage (Vout) and supporting up to 1A continuous current (Iout). The maximum input voltage can reach 18V (Vin (Max)), ensuring efficient and low-noise power conversion over a wide voltage range, making it an ideal choice for modern low voltage and high current applications.]]></description>
</item>
<item>
	<title><![CDATA[XC6219B332MR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/xc6219b332mr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:28:30</pubDate>
	<description><![CDATA[This SOT-23-5L packaged LDO linear regulator is designed specifically for low voltage applications, providing a stable 3.3V output voltage (Vout) and 0.3A current (Iout), with high efficiency and low noise characteristics. The maximum input voltage is 6V (Vin (Max)), suitable for small electronic devices to achieve high-precision and reliable power conversion within a limited voltage range.]]></description>
</item>
<item>
	<title><![CDATA[LD1117-1.8(SOT-223)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ld1117-1-8-sot-223-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:28:22</pubDate>
	<description><![CDATA[This SOT-223 package LDO linear regulator is designed for efficient power supply, providing a stable 1.8V output voltage (Vout) and up to 1A continuous current (Iout) to meet the needs of modern low-voltage and high current applications. Supports a maximum input voltage of 18V (Vin (Max)), ensuring stable and reliable power management over a wide voltage range.]]></description>
</item>
<item>
	<title><![CDATA[LD1117-5.0(SOT-223)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ld1117-5-0-sot-223-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:28:15</pubDate>
	<description><![CDATA[This LDO linear regulator is packaged in SOT-223 and provides a stable 5V output voltage (Vout) and up to 1A current (Iout), suitable for various types of medium power electronic devices. Supports a maximum input voltage of 18V (Vin (Max)), ensuring efficient and low-noise power conversion over a wide voltage range, making it an ideal circuit stabilization solution.]]></description>
</item>
<item>
	<title><![CDATA[AMS1117-5.0S(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ams1117-5-0s-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:28:07</pubDate>
	<description><![CDATA[This SOT-89 package LDO linear regulator provides a stable 5V output voltage (Vout) and up to 1A continuous current (Iout), suitable for supplying power to medium power devices. The maximum input voltage is 18V (Vin (Max)), ensuring efficient and stable operation over a wide voltage range, making it an ideal power management solution for various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[LP2985A-33DBVR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/lp2985a-33dbvr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:28:00</pubDate>
	<description><![CDATA[This LDO linear regulator adopts a small SOT-23-5L package, providing precise 3.3V output voltage (Vout) and 0.15A current (Iout), and has excellent power conversion efficiency. Supports a maximum input voltage of 16V (Vin (Max)), suitable for low-power electronic devices, achieving efficient and stable power management solutions in a compact size.]]></description>
</item>
<item>
	<title><![CDATA[LP2985-50DBVR(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/lp2985-50dbvr-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:27:52</pubDate>
	<description><![CDATA[This SOT-23-5L packaged LDO linear regulator has a precise and stable 5V output voltage (Vout) and provides 0.15A current (Iout). The maximum input voltage is 16V (Vin (Max)), suitable for low-power electronic devices. With its compact size and high stability, it effectively achieves power conversion and meets various precision circuit design requirements.]]></description>
</item>
<item>
	<title><![CDATA[LD1117-3.3(SOT-223)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ld1117-3-3-sot-223-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:27:44</pubDate>
	<description><![CDATA[This LDO linear regulator adopts a compact SOT-223 package, with a stable 3.3V output voltage (Vout) and up to 1A continuous current (Iout), designed for efficient power supply. Supports a maximum input voltage of 18V (Vin (Max)), ensuring low noise and high stability power conversion within a limited voltage range, widely applicable to various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRF640NPBF(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf640npbf-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:03:32</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET is packaged in TO-220 and designed specifically for handling 200V high voltage, medium to high current applications. Rated continuous current of 18A, widely used in power conversion, motor drive, and battery management systems, with low conduction resistance and excellent heat dissipation performance, it is an ideal component for efficient power control in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRF540N(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf540n-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:03:23</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts TO-220 packaging and is designed specifically for high current applications at 100V voltage. Rated continuous current of 33A, suitable for power conversion, motor drive, and battery management systems, with excellent low conduction resistance and efficient heat dissipation performance, it is an ideal semiconductor component for modern electronic products to achieve efficient power control.]]></description>
</item>
<item>
	<title><![CDATA[28N50(TO-3P)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/28n50-to-3p-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:03:14</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts TO-3P packaging and is designed specifically for 500V high voltage and high current applications. With a rated continuous current of up to 28A, it is suitable for power conversion, motor drive, and power control of industrial equipment. It has excellent low conduction resistance and efficient heat dissipation characteristics, making it an ideal choice for high-performance energy management in modern electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[25N50(TO-3P)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/25n50-to-3p-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:03:05</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts TO-3P packaging and is designed specifically for handling 500V high voltage and high current applications. Rated continuous current of 25A, suitable for power conversion, motor drive, and industrial control fields, with low conduction resistance and excellent heat dissipation performance, it is an ideal semiconductor component for efficient power management in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRF630(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf630-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:02:56</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts a TO-220 package, specifically designed to handle medium current applications under high voltage of 200V. Rated continuous current of 9A, widely used in power conversion, motor control, and battery management systems, with low conduction resistance and efficient heat dissipation design, it is an ideal high voltage withstand power switching device for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRF3710PBF(TO-220H)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf3710pbf-to-220h-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:02:47</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts TO-220 packaging and is designed specifically for handling 100V high voltage and high current applications. Rated continuous current of up to 60A, suitable for power conversion, motor drive, and battery management systems, with low conduction resistance and efficient heat dissipation ability, it is an ideal semiconductor component for modern electronic devices to achieve high power density and energy efficiency control.]]></description>
</item>
<item>
	<title><![CDATA[60N06(TO-220H)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/60n06-to-220h-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:02:38</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET adopts the classic TO-220H package and is designed specifically for high current applications at 60V voltage. With a continuous current processing capability of up to 60A, it is widely used in power conversion, motor drive, and battery management systems. It has low conduction resistance and excellent heat dissipation performance, making it an ideal choice for efficient power control in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[AO3415A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3415a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:02:29</pubDate>
	<description><![CDATA[This P-channel consumer grade MOSFET adopts a compact SOT-23 package, designed specifically for high-performance applications at 20V voltage. Rated continuous current of 5A, especially suitable for power conversion, battery protection, and load switch control, with low conduction resistance and excellent thermal performance, it is an ideal low-voltage power management component for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[AO3416A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3416a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-14 11:02:20</pubDate>
	<description><![CDATA[This N-channel consumer grade MOSFET features a small SOT-23 package designed specifically for medium current applications at 20V voltage. Rated continuous current of up to 6A, suitable for power conversion, load switching, and battery management systems, with low conduction resistance and excellent thermal performance, it is an ideal power management component for modern portable electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[UC3845B(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/ac-dc-controller-and-regulator/">AC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/ac-dc-controller-and-regulator/uc3845b-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:07:19</pubDate>
	<description><![CDATA[This SOP-8 packaged AC-DC controller and regulator is designed for efficient power conversion. Supports a wide range of 30V input voltage and adopts voltage rise and fall technology, which can stably output the required voltage under different conditions. The built-in switch frequency can reach up to 500kHz, ensuring fast response and efficient operation. Suitable for various devices that require flexible conversion of AC to DC energy, such as adapters, chargers, and power systems, providing compact and high-performance solutions.]]></description>
</item>
<item>
	<title><![CDATA[UC3843B(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/ac-dc-controller-and-regulator/">AC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/ac-dc-controller-and-regulator/uc3843b-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:07:09</pubDate>
	<description><![CDATA[This SOP-8 packaged AC-DC controller regulator is designed specifically for a 30V input voltage environment, achieving flexible voltage switching. Equipped with advanced control algorithms, the switching frequency can reach up to 500kHz, ensuring high efficiency and fast dynamic response. Suitable for a wide range of AC to DC power supply applications, such as battery charging, smart home appliances, and power systems, providing small volume, high-efficiency power solutions.]]></description>
</item>
<item>
	<title><![CDATA[TP4057(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/battery-management/">Battery-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/battery-management/tp4057-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:06:59</pubDate>
	<description><![CDATA[This lithium-ion battery charging management IC adopts a compact SOT23-6L package, designed for efficient charging of single lithium-ion or polymer batteries. Equipped with intelligent constant current/constant voltage charging algorithm, the maximum charging current can reach 500mA, ensuring safe and fast charging. The working voltage range is wide, from 4.25V to 6.5V, suitable for various power inputs. Integrated anti backcharge protection function, without the need for external diodes, simplifies circuit design, and is an ideal choice for portable electronic devices, achieving stable and reliable battery charging solutions.]]></description>
</item>
<item>
	<title><![CDATA[TP4056(ESOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/battery-management/">Battery-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/battery-management/tp4056-esop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:06:48</pubDate>
	<description><![CDATA[This ESOP-8 packaged battery management IC is designed specifically for single lithium-ion batteries, providing a safe and efficient charging solution. The maximum charging current can reach 1.2A, suitable for the power supply voltage range of 4.5V to 8V, ensuring a fast and stable charging process. Integrated with advanced protection functions, suitable for various portable and embedded applications, effectively extending battery life, and achieving intelligent and reliable charging management. The exquisite packaging size facilitates layout in a compact circuit board space, making it an ideal choice for improving device performance.]]></description>
</item>
<item>
	<title><![CDATA[TP4054(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/battery-management/">Battery-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/battery-management/tp4054-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:06:38</pubDate>
	<description><![CDATA[This lithium-ion battery charging controller adopts a small SOT23-5L package, designed for efficient management of single lithium-ion battery charging. This chip has an advanced constant current/constant voltage charging mode, with a maximum charging current of up to 600mA, ensuring a fast and safe charging process. The working voltage range is wide, ranging from 4.5V to 5.5V, and is compatible with various USB power inputs. Integrated over temperature and over charge protection mechanisms, simple peripheral circuits, no need for additional MOSFETs and blocking diodes, especially suitable for mobile devices and portable electronic products, providing a compact and reliable single section lithium-ion battery charging solution.]]></description>
</item>
<item>
	<title><![CDATA[PT4115(SOT-89-5L)]]></title>
	<category domain="http://www.hxymos.com/en/led-drive/">LED Drive</category>
	<link><![CDATA[http://www.hxymos.com/en/led-drive/pt4115-sot-89-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:06:28</pubDate>
	<description><![CDATA[This high-performance LED driver chip adopts a compact SOT89-5L package, designed for efficient driving of single or multiple series LEDs. Its working voltage range is wide, stable input from 5.5V to 30V, and precise voltage reduction control can be achieved with a maximum output current of 1.2A, ensuring constant brightness and long-lasting operation of LED light sources. Suitable for various LED lighting systems, displays, and backlight applications that require high current drive, providing excellent energy efficiency conversion and stability performance.]]></description>
</item>
<item>
	<title><![CDATA[LM339(SOP-14)]]></title>
	<category domain="http://www.hxymos.com/en/comparer/">Comparer</category>
	<link><![CDATA[http://www.hxymos.com/en/comparer/lm339-sop-14-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:05:57</pubDate>
	<description><![CDATA[This precision comparator is packaged in SOP-14 and has an input bias current IB as low as 250nA, as well as an ultra-low input offset voltage of ± 5mV, ensuring excellent accuracy and stability. It is designed specifically for applications that require high sensitivity signal comparison, suitable for battery powered equipment and various high-precision systems, providing excellent performance and energy-saving advantages.]]></description>
</item>
<item>
	<title><![CDATA[KBU810(KBU)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/kbu810-kbu-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:05:46</pubDate>
	<description><![CDATA[This high-end rectifier bridge device, packaged in KBU, is specially designed for 1000V high voltage and high current application environments. While ensuring excellent electrical performance, it can withstand reverse voltages up to 1000V, ensuring stable and reliable system operation. At a working current of 8A, the forward voltage drop is only 1.1V, which optimizes the power conversion efficiency and effectively reduces energy loss. In addition, the device has excellent continuous output capability and can withstand a maximum current of 8A, making it an ideal choice for various high-performance power supplies and motor drives. Choosing this rectifier bridge will help your device achieve higher energy efficiency and better stability.]]></description>
</item>
<item>
	<title><![CDATA[KBU808(KBU)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/kbu808-kbu-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:05:36</pubDate>
	<description><![CDATA[This high-performance rectifier bridge, packaged in KBU, is designed for high current and high stability applications. It has a rated reverse voltage of 800V, ensuring excellent performance even under harsh voltage conditions. At a working current of 8A, the forward voltage drop is only 1.1V, significantly reducing system energy consumption and improving overall efficiency. In addition, the device has strong continuous output capability, with a maximum current of 8A, meeting the requirements of high-power equipment for efficient rectification. Suitable for circuit design in various fields such as power supplies and motor drives, choosing this rectifier bridge will effectively improve the operational efficiency and stability of your equipment.]]></description>
</item>
<item>
	<title><![CDATA[KBU610(KBU)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/kbu610-kbu-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:05:25</pubDate>
	<description><![CDATA[This high-quality rectifier bridge device packaged in KBU is designed specifically for 1000V high voltage environments and high current applications. With excellent voltage resistance, it can withstand reverse voltages up to 1000V, ensuring stable and efficient operation of the system. At a working current of 6A, the forward voltage is reduced to 1.1V, effectively reducing power consumption and improving power conversion efficiency. In addition, the device has excellent current carrying capacity, with a maximum continuous output current of 6A, suitable for various high-power power supplies, motor drives and other fields. By choosing this rectifier bridge, your device will achieve higher energy efficiency and better stability performance.]]></description>
</item>
<item>
	<title><![CDATA[KBU1010(KBU)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/kbu1010-kbu-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:05:15</pubDate>
	<description><![CDATA[This high-performance rectifier bridge device, packaged in KBU, is specially customized for 1000V high voltage and high current application environments. It has excellent voltage resistance and can operate stably and efficiently even under reverse voltage of up to 1000V. Under a working current of 10A, the forward voltage drop is only 1.05V, achieving ultra-low power consumption and efficient power conversion. This device has strong current processing capability, with a maximum continuous output current of up to 10A, making it an ideal choice for high-end power systems and high-power motor drives.]]></description>
</item>
<item>
	<title><![CDATA[KBP410(KBP)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/kbp410-kbp-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:05:05</pubDate>
	<description><![CDATA[This semiconductor device is a high-performance rectifier bridge, using advanced packaging technology - KBP packaging, compact size, and excellent thermal performance. Its main specifications include VR up to 1000V, which can effectively resist high voltage shocks and ensure stable operation of the equipment; VF as low as 1.1V@4A Means that at a working current of 4A, the voltage drop is minimal, the power loss is low, and the energy-saving effect is significant; The rated output current IO is 4A, providing powerful and stable power conversion capability. This product is an ideal choice for various high-end power systems, inverters and other electronic devices, helping to improve system efficiency and reliability.]]></description>
</item>
<item>
	<title><![CDATA[KBP310(KBP)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/kbp310-kbp-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:04:54</pubDate>
	<description><![CDATA[This semiconductor device is a rectifier bridge designed with KBP packaging technology, specifically for high efficiency and low loss applications. Its key performance indicators include VR up to 1000V, which can effectively cope with harsh voltage environments and ensure equipment safety and stability; VF manifests as 1.1V@3A At a working current of 3A, the voltage drop is extremely low, significantly improving the power conversion efficiency; The rated working current IO is 3A, providing long-lasting and stable power transmission capability. Suitable for various demanding power systems, inverters and other electronic devices, it is an ideal choice to improve system efficiency and reliability.]]></description>
</item>
<item>
	<title><![CDATA[KBP307(KBP)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/kbp307-kbp-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:04:44</pubDate>
	<description><![CDATA[This high-precision rectifier bridge, packaged in KBP, is designed specifically for 800V voltage levels and medium current applications. It has excellent voltage resistance and maintains stable operation under reverse voltage of up to 800V. At a working current of 3A, the forward voltage is reduced to 1.1V, achieving efficient power conversion and significant energy-saving effects. The maximum continuous output current of the device is 3A, suitable for various power adapters, medium power motor drives, and rectification requirements in internal circuits of electronic devices. Choosing this KBP packaged rectifier bridge will bring excellent energy efficiency performance and stable operating capability to your system.]]></description>
</item>
<item>
	<title><![CDATA[KBP210(KBP)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/kbp210-kbp-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:04:34</pubDate>
	<description><![CDATA[This semiconductor device is a high-quality rectifier bridge packaged in a compact KBP package, suitable for efficient and low-energy application scenarios. Its core features include a VR maximum withstand voltage of 1000V, ensuring stable and reliable operation in high voltage environments; The VF value is 1.1V@2A When the current reaches 2A, the device voltage drop is only 1.1V, significantly reducing power consumption and improving energy efficiency performance; The rated current IO is 2A, ensuring continuous and stable power conversion capability. This rectifier bridge is widely used in various power systems, inverters and other electronic devices, helping to improve the overall performance and stability of the system.]]></description>
</item>
<item>
	<title><![CDATA[KBP206(KBP)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/kbp206-kbp-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:04:23</pubDate>
	<description><![CDATA[This high-efficiency rectifier bridge device, packaged in KBP, is specially designed for 600V voltage levels and small and medium current applications. It has excellent withstand voltage performance and operates stably under reverse voltage of 600V, ensuring system reliability. At a working current of 2A, the forward voltage drop is controlled within 1.1V, achieving low-power and high-efficiency power conversion. The maximum continuous output current of the device is 2A, suitable for power adapters, small motor drives, and various internal rectification links in electronic devices. Choosing this KBP packaged rectifier bridge will help your product achieve better energy efficiency and long-term stable circuit performance.]]></description>
</item>
<item>
	<title><![CDATA[KBL610(KBL)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/kbl610-kbl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:04:13</pubDate>
	<description><![CDATA[This semiconductor device is a high voltage rectifier bridge designed with KBL packaging technology, specifically for high current and high-efficiency application scenarios. Its core parameters include a maximum VR withstand voltage of 1000V, ensuring stable operation even in harsh high-voltage environments; VF characteristics are manifested as 1.1V@6A Even under 6A full load current, it can still maintain ultra-low voltage drop, greatly improving energy conversion efficiency and energy-saving effect; The rated output current IO reaches 6A, providing strong and long-lasting power processing capability. Suitable for various high-end power systems, inverters and other high current electronic devices, it is an ideal component choice to improve overall performance and reliability.]]></description>
</item>
<item>
	<title><![CDATA[KBL606(KBL)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/kbl606-kbl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:04:02</pubDate>
	<description><![CDATA[This semiconductor device is a high-performance rectifier bridge packaged in KBL, designed specifically for high current and low loss applications. Its key parameters include a maximum VR value of 600V, ensuring stable operation in medium and high voltage environments; VF manifests as 1.1V@6A This means that even at a full load current of 6A, the voltage drop is still controlled at an extremely low level, effectively improving energy efficiency and reducing heat loss; The rated output current IO is 6A, providing powerful and long-lasting power conversion performance. Suitable for various power supplies, inverters and other high current electronic devices, it is an ideal component choice to improve system efficiency and reliability.]]></description>
</item>
<item>
	<title><![CDATA[KBL410(KBL)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/kbl410-kbl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:03:52</pubDate>
	<description><![CDATA[This semiconductor rectifier bridge device, packaged in KBL, is specifically designed for high efficiency and low loss applications. Its main features include VR with a maximum withstand voltage of up to 1000V, ensuring stable and reliable operation under high voltage conditions; VF performs excellently, only 1.1V@4A Even at a working current of 4A, it can maintain an extremely low voltage drop, effectively improving power conversion efficiency and reducing energy consumption; The rated current IO is 4A, providing powerful and stable current processing capability. Widely used in various power systems, inverters and other electronic devices to help improve overall performance and stability.]]></description>
</item>
<item>
	<title><![CDATA[KBL406(KBL)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/kbl406-kbl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:03:42</pubDate>
	<description><![CDATA[This rectifier bridge semiconductor device, packaged in KBL, focuses on efficient and low energy consumption applications. The main features include VR withstand voltage of up to 600V, ensuring stable operation under medium and high voltage conditions; The VF value is 1.1V@4A Even at a working current of 4A, it can still maintain a low voltage drop, effectively improving system efficiency and energy-saving performance; The rated current IO is 4A, providing stable and powerful current conversion capability. Widely used in various electronic devices such as power supplies and inverters, it is an ideal choice for optimizing system performance and reliability.]]></description>
</item>
<item>
	<title><![CDATA[KBJ1510(KBJ)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/kbj1510-kbj-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:03:31</pubDate>
	<description><![CDATA[This high-performance rectifier bridge semiconductor device, packaged in KBJ, is designed specifically for high current and high efficiency applications. Its key features include VR withstand voltage of up to 1000V, ensuring stable operation in harsh voltage environments; VF value as low as 1.05V@4A Even at moderate currents, ultra-low voltage drop can be achieved, significantly improving power conversion efficiency and energy-saving performance; The rated output current IO can reach up to 15A, providing strong and long-lasting high current processing capability. Widely applicable to various high-end power systems and inverters, it is an ideal component for improving system performance and reliability.]]></description>
</item>
<item>
	<title><![CDATA[KBJ1010(KBJ)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/kbj1010-kbj-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:03:19</pubDate>
	<description><![CDATA[This semiconductor rectifier bridge device adopts advanced KBJ packaging and is designed specifically for efficient and high current applications. Its core features include a VR maximum withstand voltage of 1000V, ensuring stable and reliable operation in high voltage environments; VF as low as 1.05V@4A Maintaining ultra-low voltage drop even at 4A current significantly improves energy conversion efficiency and energy-saving effect; The rated output current IO can reach up to 10A, providing powerful and long-lasting power processing capabilities. Suitable for various high-end power systems, inverters and other equipment, it is an important component selection to improve system performance and stability.]]></description>
</item>
<item>
	<title><![CDATA[GBU810(GBU)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/gbu810-gbu-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:03:09</pubDate>
	<description><![CDATA[This GBU packaged high voltage rectifier bridge semiconductor device is designed specifically for high current and high-efficiency application scenarios. Its core parameters include a maximum VR withstand voltage of 1000V, ensuring stable operation under harsh high voltage conditions; VF characteristics are manifested as 1.1V@8A Maintaining a low voltage drop at full load 8A current significantly improves power conversion efficiency and reduces energy consumption; The rated output current IO can reach up to 8A, providing powerful and long-lasting power processing capabilities. Widely used in various high-end power systems, inverters, and other electronic devices that require high current processing, it is a high-quality choice to improve overall performance and reliability.]]></description>
</item>
<item>
	<title><![CDATA[GBU610(GBU)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/gbu610-gbu-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:02:58</pubDate>
	<description><![CDATA[This GBU packaged rectifier bridge is a high-quality device with high efficiency and low loss. It has an excellent reverse voltage rating (VR) of 1000V, and at a working current of 6A, the forward voltage drop VF is only 1.05V, ensuring that the equipment can still maintain low energy consumption and high efficiency performance during high current operation. The maximum continuous output current is up to 6A (IO), ensuring stable and reliable power transmission. Suitable for various high voltage and high current application scenarios, it is the ideal choice for your circuit design, helping you achieve a perfect combination of performance and durability.]]></description>
</item>
<item>
	<title><![CDATA[GBU606(GBU)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/gbu606-gbu-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:02:48</pubDate>
	<description><![CDATA[This high-performance rectifier bridge semiconductor device packaged in GBU is specifically designed for high current and high-performance applications. Its key features include a VR withstand voltage of up to 600V, ensuring stable operation within the conventional voltage range; VF value as low as 1.05V@6A Even at a full load current of 6A, ultra-low voltage drop can be achieved, significantly improving power conversion efficiency and energy-saving effect; The rated output current IO is 6A, providing strong and stable current processing capability. Widely used in various high-end power systems, inverters, and other high current electronic devices, it is an ideal choice for optimizing system performance and reliability.]]></description>
</item>
<item>
	<title><![CDATA[GBU410(GBU)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/gbu410-gbu-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:02:38</pubDate>
	<description><![CDATA[This high-performance rectifier bridge adopts GBU packaging and is designed for efficient and stable conversion. It has a high reverse voltage rating (VR) of 1000V and a forward voltage drop of only 1.1V (VF) at a current of 4A, effectively reducing power consumption and improving system efficiency. Its powerful and stable current processing capacity can reach 4A (IO), ensuring the safe and reliable operation of the equipment. Suitable for various high voltage and high current applications, it is the ideal choice for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[GBU406(GBU)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/gbu406-gbu-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:02:27</pubDate>
	<description><![CDATA[This high-performance rectifier bridge device adopts GBU packaging, designed specifically for high-efficiency and low loss applications. Its core parameters include a VR maximum withstand voltage of 600V, ensuring stable and reliable operation in conventional voltage environments; VF performs excellently, only for 1.1V@4A Maintaining a relatively low voltage drop at a current of 4A effectively improves power conversion efficiency and energy-saving effects; The rated output current IO reaches 4A, providing stable and powerful current processing capabilities. Widely used in various high-end power systems, inverters, and electronic devices, to help improve overall performance and stability.]]></description>
</item>
<item>
	<title><![CDATA[GBU2510(GBU)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/gbu2510-gbu-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:02:17</pubDate>
	<description><![CDATA[This GBU packaged rectifier bridge is a top-notch rectifier device designed specifically for high-power and high-efficiency applications. Equipped with a high-intensity reverse voltage rating (VR) of 1000V, the forward voltage drop VF is as low as 1.05V at 10A current, effectively reducing energy loss and improving system efficiency. Of particular concern is its powerful transient peak current capability of up to 25A (IO), ensuring stable operation even under extreme conditions. Suitable for circuit design in various high voltage and high current scenarios, it is your ideal choice for building high-performance systems.]]></description>
</item>
<item>
	<title><![CDATA[GBU1510(GBU)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/gbu1510-gbu-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:02:06</pubDate>
	<description><![CDATA[This GBU packaged rectifier bridge device stands out for its excellent performance and stability. It has a high reverse voltage rating (VR) of 1000V, and even under a continuous working current of 10A, the forward voltage drop VF can be maintained as low as 1.05V, effectively optimizing the system‘s energy efficiency performance. Meanwhile, the device has a strong continuous current carrying capacity of up to 15A (IO), ensuring stable and reliable operation under harsh conditions. This rectifier bridge is suitable for various high voltage and high current application environments and is the ideal choice for your circuit design, helping you achieve efficient and stable power conversion.]]></description>
</item>
<item>
	<title><![CDATA[GBU1010(GBU)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/gbu1010-gbu-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:01:56</pubDate>
	<description><![CDATA[This GBU packaged rectifier bridge device is designed specifically for high voltage and high current applications. Having a high reverse voltage rating (VR) of 1000V ensures stable operation in high voltage environments. Its forward voltage drop VF is as low as 1.05V at 10A current, effectively reducing power consumption and improving power conversion efficiency. In addition, the device has excellent current processing capabilities, with a maximum continuous output current of 10A (IO), ensuring efficient and reliable operation of the equipment. This rectifier bridge is an ideal choice for various high demand circuit designs, helping you easily tackle complex power conversion challenges.]]></description>
</item>
<item>
	<title><![CDATA[GBP610(GBP)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/gbp610-gbp-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:01:46</pubDate>
	<description><![CDATA[This GBP packaged rectifier bridge device is a high-quality semiconductor component designed specifically for high-efficiency power conversion applications. Equipped with a reverse voltage rating (VR) of up to 1000V, ensuring safe and stable operation under high voltage conditions. Its characteristics include a forward voltage drop of VF as low as 1.1V at 2A current, effectively reducing energy consumption and improving system efficiency. Despite performing well at low currents, the device‘s maximum continuous output current can reach 6A (IO), demonstrating excellent current carrying and transient response capabilities. Suitable for various application scenarios that require handling high voltage and high current transients, it is the ideal choice for your circuit design, helping to achieve efficient and reliable power conversion solutions.]]></description>
</item>
<item>
	<title><![CDATA[GBP410(GBP)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/gbp410-gbp-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:01:35</pubDate>
	<description><![CDATA[This GBP packaged rectifier bridge device is specifically designed for efficient and stable power conversion. It has a high reverse voltage rating (VR) of 1000V, ensuring safe operation under high voltage conditions. At a working current of 4A, the forward voltage drop VF is as low as 1.1V, effectively reducing power loss and improving system energy efficiency performance. At the same time, the device supports a maximum continuous output current of 4A (IO), providing excellent current processing capability and stability. Suitable for various application scenarios that require handling high voltage and medium current, it is the ideal choice for your circuit design, helping you achieve a perfect combination of performance and reliability.]]></description>
</item>
<item>
	<title><![CDATA[GBP310(GBP)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/gbp310-gbp-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:01:25</pubDate>
	<description><![CDATA[This GBP packaged rectifier bridge device is designed to provide efficient and stable power conversion in high voltage environments. Having a reverse voltage rating (VR) of up to 1000V ensures reliable operation even under harsh conditions. Its unique advantage lies in the forward voltage drop VF being as low as 1.1V at a working current of 2A, effectively reducing power consumption and optimizing system efficiency. Despite its excellent low current performance, the maximum continuous output current of the device can reach 3A (IO), demonstrating excellent current processing capability. Suitable for various application scenarios that require processing high voltage and medium current, it is the ideal choice for your circuit design, helping to achieve a perfect fusion of high performance and high stability.]]></description>
</item>
<item>
	<title><![CDATA[GBL810(GBL)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/gbl810-gbl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:01:15</pubDate>
	<description><![CDATA[This GBL packaged rectifier bridge device is specifically designed for high-efficiency power conversion applications. It has a reverse voltage rating (VR) of up to 1000V, ensuring safe and stable operation under high voltage conditions. At a working current of 3A, the forward voltage drop VF is as low as 1.1V, effectively reducing power loss and improving overall system efficiency. In addition, the maximum continuous output current of the device can reach 8A (IO), demonstrating excellent current carrying capacity, especially suitable for circuit design that needs to handle medium to high current intensity and high voltage environments. This rectifier bridge, with its high performance and reliability, is the ideal choice for achieving your ideal power conversion solution.]]></description>
</item>
<item>
	<title><![CDATA[GBL610(GBL)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/gbl610-gbl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:01:04</pubDate>
	<description><![CDATA[This GBL packaged rectifier bridge device is designed specifically for high-efficiency power conversion applications. Featuring a high-intensity reverse voltage rating (VR) of 1000V, ensuring stable operation in harsh high-voltage environments. Its characteristic is that the forward voltage drop VF under 3A current is only 1.1V, effectively reducing energy consumption and improving system performance. The device has excellent current processing capability, with a maximum continuous output current of 6A (IO), ensuring continuous and efficient operation in medium to high current applications. Suitable for circuit designs that require high voltage and reliability, it is your ideal choice for achieving high-quality power conversion.]]></description>
</item>
<item>
	<title><![CDATA[GBJ3510(GBJ)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/gbj3510-gbj-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:00:54</pubDate>
	<description><![CDATA[This high-performance rectifier bridge packaged in GBJ is specifically designed for high-power and high current applications. Equipped with an excellent reverse voltage rating (VR) of 1000V, ensuring stable operation in high voltage environments. Its characteristic is that the forward voltage drop VF is as low as 1.05V at a working current of 12.5A, effectively improving power conversion efficiency and reducing power consumption. More noteworthy is that the device has a powerful transient peak current carrying capacity of up to 30A (IO), ensuring excellent performance even under extreme conditions. Suitable for various circuit designs that require handling extremely high current intensity and high voltage, it is your ideal choice for building efficient and reliable power systems.]]></description>
</item>
<item>
	<title><![CDATA[GBJ2510(GBJ)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/gbj2510-gbj-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:00:44</pubDate>
	<description><![CDATA[This GBJ packaged rectifier bridge device has been optimized for high-power and high current applications. Having a reverse voltage rating (VR) of up to 1000V ensures stable and reliable operation under high voltage conditions. Its highlight is that under a continuous current of 12.5A, the forward voltage drop VF is as low as 1.05V, which helps to improve power conversion efficiency and reduce energy consumption. In addition, the device has strong current processing capabilities, with a maximum continuous output current of 25A (IO), suitable for various harsh application environments. This rectifier bridge is an ideal choice for high-performance and high stability circuit design, helping you achieve efficient and safe high current power conversion.]]></description>
</item>
<item>
	<title><![CDATA[DW03(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/battery-management/">Battery-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/battery-management/dw03-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:00:33</pubDate>
	<description><![CDATA[This lithium-ion battery charging controller adopts a small SOT23-5L package, designed for efficient management of single lithium-ion battery charging. This chip has an advanced constant current/constant voltage charging mode, with a maximum charging current of up to 600mA, ensuring a fast and safe charging process. The working voltage range is wide, ranging from 4.5V to 5.5V, and is compatible with various USB power inputs. Integrated over temperature and over charge protection mechanisms, simple peripheral circuits, no need for additional MOSFETs and blocking diodes, especially suitable for mobile devices and portable electronic products, providing a compact and reliable single section lithium-ion battery charging solution.]]></description>
</item>
<item>
	<title><![CDATA[DW02A(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/battery-management/">Battery-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/battery-management/dw02a-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:00:23</pubDate>
	<description><![CDATA[Product Category: Battery-IC     Packing: SOT-23-5L      Parameter Introduction:Power supply voltage: 1V~5.5V,,,     (Ordering Information):  Product Code: H102279     Minimum packaging: 3000pcs      Gross weight/gram :0.037g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[DW01A(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/battery-management/">Battery-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/battery-management/dw01a-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 06:00:13</pubDate>
	<description><![CDATA[Product Category: Battery-IC     Packing: SOT-23-6L      Parameter Introduction:Power supply voltage: 1V~5.5V,,,     (Ordering Information):  Product Code: H102278     Minimum packaging: 3000pcs      Gross weight/gram :0.042g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[DB307S(DBS)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/db307s-dbs-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:59:52</pubDate>
	<description><![CDATA[This DBS packaged rectifier bridge device is designed specifically for high-efficiency power conversion applications. It has a reverse voltage rating (VR) of up to 1000V, ensuring stable and reliable operation in high voltage environments. Its characteristic is that the forward voltage drop VF under 2A current is as low as 1.1V, effectively reducing power consumption and improving system efficiency. In addition, the device provides a maximum continuous output current (IO) of 3A, suitable for medium current demand scenarios. This rectifier bridge, with its excellent performance and miniaturized packaging design, has become an ideal choice for various circuit designs, especially suitable for applications that need to handle high voltage and limited space.]]></description>
</item>
<item>
	<title><![CDATA[DB157S(DBS)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/db157s-dbs-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:59:42</pubDate>
	<description><![CDATA[This DBS packaged rectifier bridge device is designed for efficient and low consumption power conversion needs. It has a reverse voltage rating (VR) of up to 1000V, ensuring long-lasting and stable operation under high voltage conditions. Its key feature is that the forward voltage drop VF is as low as 1.1V at 1A current, effectively optimizing system energy efficiency and reducing power consumption. At the same time, the device has excellent current processing ability, with a maximum continuous output current of 1.5A (IO), suitable for medium current applications. With its exquisite DBS packaging and excellent performance, this rectifier bridge has become an ideal choice for circuit design, helping you achieve a cost-effective and reliable power conversion solution.]]></description>
</item>
<item>
	<title><![CDATA[AT24C64(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/eeprom/">EEPROM</category>
	<link><![CDATA[http://www.hxymos.com/en/eeprom/at24c64-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:59:31</pubDate>
	<description><![CDATA[This 64Kbit high-capacity EEPROM device adopts a compact SOP-8 package and has an I2C serial interface, providing a flexible and efficient storage solution. Supports a wide clock frequency range of 400kHz to 1MHz, ensuring high-speed data transmission and convenient system integration. Especially suitable for embedded systems, smart devices, and IoT applications that require small volume, non-volatile storage, and low power consumption characteristics, it is a reliable data storage partner in your design.]]></description>
</item>
<item>
	<title><![CDATA[AT24C16(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/eeprom/">EEPROM</category>
	<link><![CDATA[http://www.hxymos.com/en/eeprom/at24c16-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:59:21</pubDate>
	<description><![CDATA[This 16Kbit EEPROM semiconductor device is packaged in a compact SOP-8 package with an I2C interface, providing an efficient and convenient data storage solution. Supports clock frequencies from 400kHz to 1MHz, enabling high-speed data transmission and meeting different system configuration requirements. Suitable for various low-power embedded designs, intelligent hardware, and IoT devices, ensuring non-volatile storage of critical information, it is the ideal choice for your product design.]]></description>
</item>
<item>
	<title><![CDATA[AT24C128(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/eeprom/">EEPROM</category>
	<link><![CDATA[http://www.hxymos.com/en/eeprom/at24c128-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:59:10</pubDate>
	<description><![CDATA[This 128Kbit high-capacity EEPROM adopts SOP-8 packaging and has an I2C serial interface, providing a high-capacity and efficient non-volatile data storage solution. Supports a wide clock frequency range of 400kHz to 1MHz, ensuring seamless integration with multiple system configurations and achieving high-speed read and write operations. Suitable for various low-power embedded systems, smart devices, and IoT applications, it is an ideal semiconductor device choice to ensure secure storage of critical data.]]></description>
</item>
<item>
	<title><![CDATA[AT24C02(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/eeprom/">EEPROM</category>
	<link><![CDATA[http://www.hxymos.com/en/eeprom/at24c02-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:59:00</pubDate>
	<description><![CDATA[This compact 2Kbit EEPROM chip is packaged in SOP-8, specifically designed for compact design and efficient data storage. Integrated I2C interface enables simple and fast data read and write operations, with a clock frequency range of 400kHz to 1MHz, ensuring high-speed communication capability. Especially suitable for low-power embedded systems, smart devices, and IoT applications, providing stable and reliable non-volatile data storage solutions.]]></description>
</item>
<item>
	<title><![CDATA[AD24C02(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/eeprom/">EEPROM</category>
	<link><![CDATA[http://www.hxymos.com/en/eeprom/ad24c02-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:58:50</pubDate>
	<description><![CDATA[This EEPROM adopts I2C interface and has a storage capacity of 2Kbit, suitable for various application scenarios that require stable data storage. It supports clock frequencies ranging from 400kHz to 1MHz, ensuring fast data transmission rates. This device can operate stably at operating voltages ranging from 1.8V to 5.5V, providing a wide range of power adaptability. It is suitable for devices that require frequent read and write operations, such as settings saving and firmware updates in consumer electronics and personal computing devices, ensuring data reliability and persistence. In addition, its low power consumption characteristics help extend the battery life of portable devices and meet the energy-saving needs of modern electronic products.]]></description>
</item>
<item>
	<title><![CDATA[ABS10(ABS)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/abs10-abs-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:58:39</pubDate>
	<description><![CDATA[This rectifier bridge device is packaged using ABS technology, suitable for circuit designs with high performance and efficiency requirements. It has a rated voltage of VR1000V, ensuring stable operation under high voltage conditions. The key parameter VF manifests as 1V@0.4A At a current of 0.4A, the forward voltage drop is only 1V, achieving a perfect combination of low power consumption and high efficiency. The device provides a maximum output current of 1A (IO: 1A), suitable for various medium current applications. This semiconductor rectifier bridge, with its excellent electrical performance and energy-saving characteristics, is an ideal choice for electronic devices such as power adapters and drive circuits, helping to improve the overall performance and energy utilization of your equipment.]]></description>
</item>
<item>
	<title><![CDATA[74HC164D(SOP-14)]]></title>
	<category domain="http://www.hxymos.com/en/shift-register/">Shift register</category>
	<link><![CDATA[http://www.hxymos.com/en/shift-register/74hc164d-sop-14-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:58:29</pubDate>
	<description><![CDATA[This SOP-14 packaged shift register is designed for efficient data conversion. It can operate stably within a wide voltage range of 2V to 6V, achieving precise serial to parallel data conversion function. With 8 independent component bits and excellent parallel output capability, it is suitable for various high-end digital system integration applications and is your ideal choice for efficient data processing.]]></description>
</item>
<item>
	<title><![CDATA[LM317T(TO-220S)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/lm317t-to-220s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:27:17</pubDate>
	<description><![CDATA[This high current LDO linear regulator is packaged in TO-220 and is designed to provide an accurate 1.3V output voltage and can withstand up to 1.5A continuous current. Compatible with a wide input voltage range (up to 40V), it has excellent load regulation ability and low ripple characteristics, providing your device with a powerful and stable low-voltage high current power supply solution.]]></description>
</item>
<item>
	<title><![CDATA[LM317(SOT-223)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/lm317-sot-223-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:27:06</pubDate>
	<description><![CDATA[This high-performance LDO linear regulator is packaged in SOT-223 and has an adjustable output voltage range of 1.2 to 37V, providing stable current output of up to 1.5A and adapting to a wide input voltage range (up to 40V). With excellent load regulation capability and low ripple performance, we provide flexible and efficient regulated power solutions for your circuits in high-power applications.]]></description>
</item>
<item>
	<title><![CDATA[L7815CV(TO-220S)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/l7815cv-to-220s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:26:55</pubDate>
	<description><![CDATA[This high-power LDO linear regulator is packaged in TO-220, providing a stable 15V output voltage and up to 1A continuous current. Suitable for a wide input voltage range (up to 35V), it has excellent load regulation performance and low ripple characteristics, providing powerful and reliable high-voltage power solutions for your equipment.]]></description>
</item>
<item>
	<title><![CDATA[L7812CV(TO-220S)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/l7812cv-to-220s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:26:44</pubDate>
	<description><![CDATA[This high-performance LDO linear regulator is packaged in TO-220 and designed to provide a stable 12V output voltage and up to 1A continuous current. Suitable for a wide input voltage range (up to 35V), it has excellent load regulation ability and low ripple performance, providing powerful and stable medium and high voltage power solutions for your equipment.]]></description>
</item>
<item>
	<title><![CDATA[L7809CV(TO-220S)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/l7809cv-to-220s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:26:22</pubDate>
	<description><![CDATA[This TO-220 packaged LDO linear regulator is designed specifically for medium to high power applications, providing a stable 9V output voltage (Vout) and a maximum 1A current (Iout), suitable for various high load devices. Supports up to 35V input voltage (Vin (Max)), ensuring efficient and low ripple power conversion over a wide voltage range, making it an ideal voltage regulator for industrial grade electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[L7806CV(TO-220S)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/l7806cv-to-220s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:25:59</pubDate>
	<description><![CDATA[This high-performance LDO linear regulator is packaged in TO-220 and designed to provide a stable 6V output voltage and up to 1A continuous current. Suitable for a wide input voltage range (up to 35V), it has excellent load regulation ability and low ripple characteristics, providing efficient and stable medium voltage power support for your high-power equipment.]]></description>
</item>
<item>
	<title><![CDATA[L7805CV(TO-220S)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/l7805cv-to-220s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:25:48</pubDate>
	<description><![CDATA[This high-efficiency LDO linear regulator is packaged in TO-220, providing your device with a stable 5V output voltage and a maximum 1A current. Suitable for a wide input voltage range (up to 35V), with excellent load regulation performance and low ripple characteristics, ensuring reliable and stable medium voltage power supply solutions under high power conditions.]]></description>
</item>
<item>
	<title><![CDATA[L7805CD2T(TO-263)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/l7805cd2t-to-263-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:25:37</pubDate>
	<description><![CDATA[This efficient LDO linear regulator is packaged in TO-263, making it particularly suitable for high-power applications. It provides a stable 5V output voltage and a continuous current of up to 1A, supporting a wide input voltage range (up to 35V). With excellent load regulation capability and low ripple performance, we provide powerful and stable medium voltage power supply for your equipment.]]></description>
</item>
<item>
	<title><![CDATA[HXY6206SI-3.3(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hxy6206si-3-3-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:25:26</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HT7544-1(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7544-1-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:25:15</pubDate>
	<description><![CDATA[This SOT-89 package LDO linear regulator is designed to provide a stable 4.4V output voltage (Vout) and 0.1A current (Iout), suitable for low to medium power electronic devices. Supports up to 30V input voltage (Vin (Max)), ensuring efficient and reliable power conversion over a wide voltage range, making it an ideal power management solution for embedded systems and miniaturized applications.]]></description>
</item>
<item>
	<title><![CDATA[HT7540(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7540-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:25:03</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HT7536S(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7536s-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:24:52</pubDate>
	<description><![CDATA[This LDO linear regulator adopts a compact SOT-23 package, with an output voltage accurately stable at 3.6V and providing a maximum current output of 0.1A. Suitable for a wide input voltage range, up to 30V. With its excellent stability and low noise performance, we provide efficient and stable power solutions for your electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HT7536-1(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7536-1-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:24:41</pubDate>
	<description><![CDATA[This LDO linear regulator adopts SOT-89 packaging and is designed for efficient voltage regulation. Its output voltage is stable at 3.6V, with a maximum current of 0.1A, suitable for a wide input voltage range, up to 30V. With excellent stability and low power consumption characteristics, ensure that your circuit receives pure and stable power supply.]]></description>
</item>
<item>
	<title><![CDATA[HT7530-1(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7530-1-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:24:30</pubDate>
	<description><![CDATA[This LDO linear regulator is packaged in SOT-89 and designed specifically for precision voltage conversion. It provides a stable 3V output voltage and a maximum current capacity of 0.1A, suitable for a wide input voltage range, up to 30V. With excellent stability and low ripple performance, we ensure to provide efficient and reliable low-voltage power solutions for your circuits.]]></description>
</item>
<item>
	<title><![CDATA[HT7130(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7130-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:24:18</pubDate>
	<description><![CDATA[This exquisite LDO linear regulator adopts a space saving SOT-23 package, which can stably output 3V voltage and maximum 0.05A current. It is compatible with input voltages up to 30V and provides efficient and stable low-voltage power solutions in a compact size with excellent voltage stability and low noise performance.]]></description>
</item>
<item>
	<title><![CDATA[AMS1117-3.3V(SOT-223)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ams1117-3-3v-sot-223-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:24:07</pubDate>
	<description><![CDATA[This high-performance LDO linear regulator is packaged in SOT-223 and designed specifically for high current applications. Provides stable 3.3V output voltage and maximum 1A output current capability, with a wide input voltage range supporting up to 18V. With excellent load regulation and low noise performance, ensure efficient and stable low-voltage high current power supply solutions for your equipment.]]></description>
</item>
<item>
	<title><![CDATA[79L05(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/79l05-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:23:56</pubDate>
	<description><![CDATA[This high-performance LDO linear regulator adopts a compact SOT-89 package and is designed to provide a stable 5V output voltage and a maximum current of 0.1A. Its wide input voltage range supports up to 30V, ensuring efficient and consistent 5V power supply for your circuit with excellent power stability and low noise characteristics.]]></description>
</item>
<item>
	<title><![CDATA[78M05(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/78m05-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:23:45</pubDate>
	<description><![CDATA[This high-performance LDO linear regulator, packaged in TO-252-2L, provides a stable 5V output voltage and a maximum current of 0.5A, enabling efficient operation at input voltages up to 35V. Specially designed for high voltage and medium current applications, ensuring stable and reliable system power supply, suitable for various industrial grade electronic devices and power management systems.]]></description>
</item>
<item>
	<title><![CDATA[78L15(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/78l15-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:23:34</pubDate>
	<description><![CDATA[This high-performance LDO linear regulator is packaged in SOT-89 and can provide a stable output voltage of 15V and a maximum current of 0.1A, suitable for a wide range of input voltages up to 35V. With its excellent load regulation ability and low noise performance, it ensures efficient and stable high-voltage power supply support for your equipment.]]></description>
</item>
<item>
	<title><![CDATA[78L08(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/78l08-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:23:23</pubDate>
	<description><![CDATA[This LDO linear regulator is packaged in SOT-89 and designed to provide precise and stable 8V output voltage, with a maximum current of 0.1A. It can maintain efficient operation within the range of input voltage up to 30V, and with its excellent load regulation performance and low noise characteristics, it provides reliable and stable medium and high voltage power support for your circuit.]]></description>
</item>
<item>
	<title><![CDATA[78L06(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/78l06-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:23:12</pubDate>
	<description><![CDATA[This LDO linear regulator adopts a compact SOT-89 package, designed specifically for high-precision voltage conversion. Provide stable 6V output voltage and maximum 0.1A current capability, suitable for a wide input voltage range (up to 30V). With excellent linear regulation performance and low ripple characteristics, ensure efficient and stable medium voltage power supply for your circuit.]]></description>
</item>
<item>
	<title><![CDATA[78L05(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/78l05-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:23:00</pubDate>
	<description><![CDATA[This LDO linear regulator is packaged in SOT-89 and designed to provide precise and stable 5V voltage output, with a maximum support of 0.1A current. Suitable for a wide input voltage range (up to 30V), with excellent load regulation ability and low ripple performance, it is an ideal low-voltage power supply solution for various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[78L05(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/78l05-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:22:28</pubDate>
	<description><![CDATA[This small LDO linear regulator is packaged in SOT-23 and designed specifically for precision voltage conversion. Provides stable 5V output voltage and maximum 0.1A current capability, suitable for a wide input voltage range (up to 35V). With its excellent stability and low noise performance, we provide efficient and reliable low-voltage power solutions for your circuits in a compact space.]]></description>
</item>
<item>
	<title><![CDATA[78D05L(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/78d05l-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:22:17</pubDate>
	<description><![CDATA[This TO-252-2L packaged LDO linear regulator provides a stable 5V output voltage (Vout) and a maximum current of 0.5A (Iout), suitable for medium to low power electronic devices. Supports up to 35V input voltage (Vin (Max)), achieving efficient and accurate power conversion over a wide voltage range, making it an ideal choice for embedded systems and small electronic products.]]></description>
</item>
<item>
	<title><![CDATA[7812(TO-220S)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/7812-to-220s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:22:05</pubDate>
	<description><![CDATA[This TO-220 packaged LDO linear regulator is designed specifically for high-power applications, providing stable 12V output voltage (Vout) and up to 1A current (Iout), suitable for various medium to high power devices. Supporting a maximum input voltage of 35V (Vin (Max)), ensuring efficient and reliable power conversion over a wide voltage range, it is an ideal voltage stabilization solution for industrial grade electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[7805(TO-220S)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/7805-to-220s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:21:54</pubDate>
	<description><![CDATA[This TO-220 packaged LDO linear regulator is designed to provide a constant 5V output voltage (Vout) and a maximum 1A current (Iout), suitable for high-power electronic devices. Supporting up to 35V input voltage (Vin (Max)), ensuring efficient and stable power conversion over a wide voltage range, it is an ideal power supply solution for industrial grade embedded systems and large equipment.]]></description>
</item>
<item>
	<title><![CDATA[662K(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/662k-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 05:21:43</pubDate>
	<description><![CDATA[This compact SOT-23 packaged LDO linear regulator is designed specifically for low voltage, medium current applications. Provide stable 3.3V output voltage and maximum 0.3A current, suitable for input voltage range up to 8V. With excellent load adjustment rate and low noise performance, we provide efficient and reliable low-voltage power solutions for your circuits.]]></description>
</item>
<item>
	<title><![CDATA[ZMM10V(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zmm10v-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:31:42</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: LL-34      Parameter Introduction:Current/A: 0.1, voltage/V: 10, voltage drop/V: 1, reverse current/uA: 0.1,     (Ordering Information):  Product Code: H100265     Minimum packaging: 2500pcs      Gross weight/gram :0.046g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[ZM4742A(LL-41)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zm4742a-ll-41-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:31:30</pubDate>
	<description><![CDATA[This LL-41 packaged voltage regulator diode provides precise 12V stable voltage (VZ), with a low reverse current IR of only 5uA, and exhibits excellent performance under 21mA IZT conditions. The maximum dissipation power reaches 1W, ensuring efficient and stable voltage control in various high current applications. Specially designed for circuits that require high-precision voltage regulation and good heat dissipation performance, it is an ideal choice for power systems and equipment protection.]]></description>
</item>
<item>
	<title><![CDATA[ZM4734A(LL-41)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zm4734a-ll-41-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:31:19</pubDate>
	<description><![CDATA[This LL-41 packaged voltage regulator diode provides a stable 5.6V voltage (VZ) and has a low reverse current IR of 10uA, performing excellently at high IZT values of 45mA. The maximum dissipation power is up to 1W, ensuring efficient and stable voltage regulation capability in high current applications. Suitable for circuit designs that require high stability and good thermal performance, it is an ideal power management solution.]]></description>
</item>
<item>
	<title><![CDATA[ZM4733A(LL-41)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zm4733a-ll-41-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:31:07</pubDate>
	<description><![CDATA[This LL-41 packaged voltage regulator diode provides precise 5.1V stable voltage output (VZ), with a low reverse current IR of 10uA, and excellent performance under high current conditions of 49mA IZT. The maximum dissipation power is up to 1W, ensuring efficient and stable voltage control in high load applications. Especially suitable for small circuit designs that require high precision and good thermal management capabilities, it is an ideal power supply voltage stabilization solution.]]></description>
</item>
<item>
	<title><![CDATA[SOD4007(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/sod4007-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:30:55</pubDate>
	<description><![CDATA[This universal diode is packaged in SOD-123FL and has a reverse withstand voltage of up to 1000V and a continuous forward current capability of 1A. Its superior forward conduction voltage VF is 1.1V, ensuring high efficiency and low loss characteristics in various applications, suitable for power rectification, overvoltage protection, and general diode requirements in various circuits.]]></description>
</item>
<item>
	<title><![CDATA[SK34(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/sk34-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:30:32</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[S3M(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/s3m-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:30:20</pubDate>
	<description><![CDATA[This SMB packaged Schottky diode has excellent electrical performance and is designed specifically for high voltage applications. Rated reverse withstand voltage up to 1000V, providing 3A forward current carrying capacity, and having an ultra-low forward voltage drop VF of only 1.1V, ensuring high efficiency and fast recovery time, widely used in power rectification, high-frequency switching circuits, and high-voltage protection scenarios.]]></description>
</item>
<item>
	<title><![CDATA[MMBD4148CC(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mmbd4148cc-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:29:56</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[MM5Z9V1(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z9v1-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:29:45</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 9.1, voltage drop/V: 0.9, reverse current/uA: 0.2, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100356     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z8V2(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z8v2-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:29:33</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 8.2, voltage drop/V: 0.9, reverse current/uA: 0.7, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100324     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z7V5(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z7v5-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:29:21</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 7.5, voltage drop/V: 0.9, reverse current/uA: 1, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100361     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z6V8(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z6v8-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:29:09</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 6.8, voltage drop/V: 0.9, reverse current/uA: 2, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100325     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z6V2(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z6v2-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:28:58</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 6.2, voltage drop/V: 0.9, reverse current/uA: 3, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100352     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z5V6(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z5v6-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:28:46</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 5.6, voltage drop/V: 0.9, reverse current/uA: 1, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100350     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z4V3(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z4v3-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:28:11</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 4.3, voltage drop/V: 0.9, reverse current/uA: 3, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100340     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z3V9(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z3v9-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:27:59</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 3.9, voltage drop/V: 0.9, reverse current/uA: 3, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100346     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z3V6(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z3v6-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:27:47</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 3.6, voltage drop/V: 0.9, reverse current/uA: 5, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100366     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z3V3(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z3v3-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:27:35</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 3.3, voltage drop/V: 0.9, reverse current/uA: 5, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100347     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z39(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z39-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:27:11</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 39, voltage drop/V: 0.9, reverse current/uA: 0.05, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100294     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z36(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z36-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:26:59</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 36, voltage drop/V: 0.9, reverse current/uA: 0.05, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100335     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z33(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z33-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:26:48</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 33, voltage drop/V: 0.9, reverse current/uA: 0.05, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100301     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z30(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z30-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:26:36</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 30, voltage drop/V: 0.9, reverse current/uA: 0.05, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100332     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z2V7(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z2v7-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:26:24</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 2.7, voltage drop/V: 0.9, reverse current/uA: 20, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100351     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z2V4(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z2v4-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:26:12</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 2.4, voltage drop/V: 0.9, reverse current/uA: 50, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100348     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z2V0(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z2v0-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:26:00</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 2, voltage drop/V: 0.9, reverse current/uA: 150, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100353     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z27(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z27-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:25:49</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 27, voltage drop/V: 0.9, reverse current/uA: 0.05, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100308     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z24(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z24-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:25:37</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 24, voltage drop/V: 0.9, reverse current/uA: 0.05, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100304     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z22(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z22-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:25:25</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 22, voltage drop/V: 0.9, reverse current/uA: 0.05, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100322     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z20(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z20-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:25:13</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 20, voltage drop/V: 0.9, reverse current/uA: 0.05, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100334     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z18(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z18-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:25:01</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 18, voltage drop/V: 0.9, reverse current/uA: 0.05, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100328     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z16(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z16-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:24:50</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 16, voltage drop/V: 0.9, reverse current/uA: 0.05, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100355     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z15(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z15-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:24:38</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 15, voltage drop/V: 0.9, reverse current/uA: 0.05, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100354     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z13(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z13-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:24:26</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 13, voltage drop/V: 0.9, reverse current/uA: 0.1, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100329     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z12(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z12-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:24:14</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 12, voltage drop/V: 0.9, reverse current/uA: 0.1, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100349     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z11(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z11-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:24:02</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 11, voltage drop/V: 0.9, reverse current/uA: 0.1, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100343     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[MM5Z10(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/mm5z10-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:23:51</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-523      Parameter Introduction:Current/A: 0.01, voltage/V: 10, voltage drop/V: 0.9, reverse current/uA: 0.1, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100360     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[DSK34(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/dsk34-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:23:27</pubDate>
	<description><![CDATA[This SOD-123FL packaged Schottky diode is known for its high efficiency and is suitable for high-speed switching and low loss applications. Equipped with a 40V reverse withstand voltage and a forward current processing capability of up to 3A, its excellent 0.55V forward conduction voltage drop VF ensures excellent power conversion efficiency, making it an ideal choice for high-frequency inverters, DC-DC converters, and battery protection schemes.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C62S(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c62s-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:23:15</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-323      Parameter Introduction:Current/A: 0.01, voltage/V: 62, voltage drop/V: 0.85, reverse current/uA: 0.04, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100336     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BZT52C47S(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c47s-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:23:04</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-323      Parameter Introduction:Current/A: 0.01, voltage/V: 47, voltage drop/V: 0.85, reverse current/uA: 0.04, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100344     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BZT52C47(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c47-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:22:52</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-123      Parameter Introduction:Current/A: 0.01, voltage/V: 47, voltage drop/V: 0.9, reverse current/uA: 0.04, power consumption/W: 0.5,     (Ordering Information):  Product Code: H100370     Minimum packaging: 3000pcs      Gross weight/gram :0.035g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[B5819WT(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/b5819wt-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:22:40</pubDate>
	<description><![CDATA[This SOD-523 packaged Schottky diode is designed specifically for efficient and low power circuits. It has a reverse withstand voltage of 40V and a forward current carrying capacity of 0.35A. Its excellent forward conduction voltage VF is as low as 0.6V, ensuring excellent power conversion efficiency and fast switching performance. Suitable for protection and rectification applications in power management, high-frequency switching circuits, and portable devices.]]></description>
</item>
<item>
	<title><![CDATA[B5817WS-SJ(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/b5817ws-sj-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:22:28</pubDate>
	<description><![CDATA[This Schottky diode adopts a compact SOD-323 package, which has a reverse withstand voltage as low as 20V and a continuous forward current processing capability of up to 1A. Its prominent feature is that the ultra-low forward conduction voltage VF is only 0.45V, effectively reducing power loss and improving circuit efficiency. Suitable for applications such as high-efficiency switching power supplies, high-speed signal rectification, and battery protection.]]></description>
</item>
<item>
	<title><![CDATA[1N5817W(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/1n5817w-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:22:05</pubDate>
	<description><![CDATA[This SOD-123 package Schottky diode has a high reverse voltage withstand of 20V and a forward current processing capability of 1A. Especially outstanding is its ultra-low forward voltage drop VF of only 0.45V, significantly improving circuit energy efficiency. Specially designed for applications such as switching power supplies, DC-DC converters, and freewheeling and battery protection, achieving high-performance performance in compact sizes.]]></description>
</item>
<item>
	<title><![CDATA[1N4448WS(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/1n4448ws-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:21:53</pubDate>
	<description><![CDATA[This switch diode adopts SOD-323 micro packaging, suitable for circuit design with limited space. It has a reverse withstand voltage of 100V and a forward current capacity of 0.3A, with a forward conduction voltage VF as low as 0.62V, ensuring high efficiency and low power consumption performance. Widely used in power conversion, signal switching, and protection and control circuits in various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[1N4448W(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/1n4448w-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:21:41</pubDate>
	<description><![CDATA[This SOD-123 packaged switching diode is suitable for circuit designs with limited space. It has a reverse withstand voltage of 100V and a forward current rating of 0.3A. Its forward conduction voltage VF is 1.25V, ensuring good performance in low-power switching applications. It is commonly used in signal switching, power control, and protection circuits of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[1N4007WS(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/1n4007ws-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:21:29</pubDate>
	<description><![CDATA[This universal diode adopts SOD-323 small package and has excellent electrical performance. It has a reverse withstand voltage of up to 1000V and a forward current carrying capacity of 1A, while also having a forward conduction voltage VF as low as 0.715V, ensuring high efficiency and reliability in various circuits. It is suitable for power conversion, overvoltage protection, and general rectification needs of various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[1N4004(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/1n4004-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:21:17</pubDate>
	<description><![CDATA[This SMA packaged universal diode is designed specifically for high reliability circuits. With excellent reverse withstand voltage of 400V and continuous forward current capability of 1A, its forward conduction voltage VF is as low as 1V, ensuring excellent power loss control and efficient performance. Widely used in power conversion, overvoltage protection, and general purposes of various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HNG7282(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hng7282-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:13:30</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN5X6-8L      Parameter Introduction:Current/A: 75, Voltage/V: 100, Internal Resistance Typ/mR: 7.3, VGS: 20, Type: N,     (Ordering Information):  Product Code: H103862     Minimum packaging: 5000pcs      Gross weight/gram :0.137g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BSC098N10NS5(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc098n10ns5-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:13:18</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET features a compact DFN5X6-8L package with excellent heat dissipation performance. Rated voltage of 100V, continuous current up to 80A, especially suitable for applications such as space limited and requiring efficient power conversion, high current load control, and battery management systems, providing powerful power processing capabilities and high reliability.]]></description>
</item>
<item>
	<title><![CDATA[BSC070N10NS3G(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc070n10ns3g-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:13:06</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a miniaturized DFN5X6-8L package, which has superior heat dissipation performance. Its specifications are 100V leakage source voltage and 75A continuous current, which are particularly suitable for applications such as power conversion, load switching, and battery management systems that require compact space and high efficiency, providing excellent power processing capabilities and reliability.]]></description>
</item>
<item>
	<title><![CDATA[HXYG125N06NF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxyg125n06nf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:12:54</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN5X6-8L      Parameter Introduction:Current/A: 125, Voltage/V: 60, Internal Resistance Typ/mR: 2.4, VGS: 20, Type: N,     (Ordering Information):  Product Code: H103875     Minimum packaging: 5000pcs      Gross weight/gram :0.137g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXYG400N08L(TOLL)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxyg400n08l-toll-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:12:42</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TOLL      Parameter Introduction:Current/A: 400, Voltage/V: 80, Internal Resistance Typ/mR: 1.6, VGS: 20, Type: N,     (Ordering Information):  Product Code: H103760     Minimum packaging: 2000pcs      Gross weight/gram :0.945g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HT7202(TOLL)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ht7202-toll-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 04:12:30</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts high current packaging TOLL, with a rated voltage of 80V and continuous current processing capacity of up to 400A, designed specifically for high-power applications. Suitable for power conversion, motor drive, and large-scale load switching scenarios]]></description>
</item>
<item>
	<title><![CDATA[HD2190(TO-252-4L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd2190-to-252-4l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:38:23</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-4L      Parameter Introduction:Current/A: 20, voltage/V: 60, internal resistance Typ/mR: 26, VGS: 20, type: N+P,     (Ordering Information):  Product Code: H104577     Minimum packaging: 2500pcs      Gross weight/gram :0.387g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HD2195(TO-252-4L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd2195-to-252-4l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:37:59</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-4L      Parameter Introduction:Current/A: 20, voltage/V: 40, internal resistance Typ/mR: 18, VGS: 20, type: N+P,     (Ordering Information):  Product Code: H104566     Minimum packaging: 2500pcs      Gross weight/gram :0.387g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY30P06D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy30p06d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:37:47</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 30, voltage/V: 60, internal resistance Typ/mR: 29, VGS: 20, type: P,     (Ordering Information):  Product Code: H104550     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HD6951(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6951-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:37:35</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 10, voltage/V: 60, internal resistance Typ/mR: 125, VGS: 20, type: P,     (Ordering Information):  Product Code: H104548     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HD6959(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6959-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:37:22</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 50, voltage/V: 60, internal resistance Typ/mR: 20, VGS: 20, type: P,     (Ordering Information):  Product Code: H104547     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HD6953(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6953-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:37:10</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 15, Voltage/V: 60, Internal Resistance Typ/mR: 70, VGS: 20, Type: P,     (Ordering Information):  Product Code: H104541     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY20P06D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy20p06d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:36:58</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 20, voltage/V: 60, internal resistance Typ/mR: 64, VGS: 20, type: P,     (Ordering Information):  Product Code: H104537     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HD6957(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6957-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:36:46</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 30, voltage/V: 60, internal resistance Typ/mR: 29, VGS: 20, type: P,     (Ordering Information):  Product Code: H104536     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY15P06D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy15p06d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:36:33</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 15, Voltage/V: 60, Internal Resistance Typ/mR: 70, VGS: 20, Type: P,     (Ordering Information):  Product Code: H104533     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY50P06D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy50p06d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:36:21</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 50, voltage/V: 60, internal resistance Typ/mR: 20, VGS: 20, type: P,     (Ordering Information):  Product Code: H104531     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY120P03D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy120p03d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:36:09</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 120, Voltage/V: 30, Internal Resistance Typ/mR: 3.7, VGS: 20, Type: P,     (Ordering Information):  Product Code: H104524     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY80P03D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy80p03d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:35:57</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 80, Voltage/V: 30, Internal Resistance Typ/mR: 5.5, VGS: 25, Type: P,     (Ordering Information):  Product Code: H104522     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HD6363(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6363-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:35:44</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 100, voltage/V: 30, internal resistance Typ/mR: 3.5, VGS: 20, type: P,     (Ordering Information):  Product Code: H104519     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY50P04D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy50p04d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:35:32</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 50, Voltage/V: 40, Internal Resistance Typ/mR: 10, VGS: 20, Type: P,     (Ordering Information):  Product Code: H104518     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HD6365(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6365-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:35:20</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 120, Voltage/V: 30, Internal Resistance Typ/mR: 3.7, VGS: 20, Type: P,     (Ordering Information):  Product Code: H104517     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HD6751(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6751-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:35:08</pubDate>
	<description><![CDATA[This field-effect transistor has a current carrying capacity of 25A, supports a maximum voltage of 40V, and has a typical internal resistance of 31m Ω, making it suitable for high-speed switch applications. Its P-type characteristics make it perform well in various electronic devices, ensuring the stability and reliability of the system. Suitable for various circuit design requirements such as power management and signal amplification.]]></description>
</item>
<item>
	<title><![CDATA[HXY100P03D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy100p03d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:34:55</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HD6359-F(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6359-f-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:34:43</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HXY80P04D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy80p04d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:34:31</pubDate>
	<description><![CDATA[This field-effect transistor adopts a P-type design and is suitable for high current and low voltage scenarios. It has a high current carrying capacity of 80A, a maximum operating voltage of 40V, a typical internal resistance value of 7.3m Ω, and a gate source voltage VGS of 20V. It is known for its high efficiency and stability, making it suitable for applications that require high performance in electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[HXY40P04D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy40p04d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:34:18</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HD6757(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6757-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:34:06</pubDate>
	<description><![CDATA[This field-effect transistor has a current carrying capacity of 80A and a voltage tolerance of 40V, with a typical internal resistance of 7.3m Ω, making it suitable for high-performance applications. Its P-type design ensures good current conduction performance. Suitable for various applications such as power management.]]></description>
</item>
<item>
	<title><![CDATA[HD6755(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6755-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:33:54</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HD6361(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6361-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:33:42</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HD6753(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6753-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:33:30</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HD6353(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6353-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:33:18</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HXY50P02D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy50p02d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:32:54</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts TO-252-2L packaging, with a working voltage of 20V and a high current processing capacity of up to 50A. Designed specifically for low voltage and high current applications in consumer electronics, it provides excellent switching performance and energy efficiency, making it an ideal semiconductor component choice for optimizing power conversion and system stability.]]></description>
</item>
<item>
	<title><![CDATA[NTD25P03LG(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntd25p03lg-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:32:42</pubDate>
	<description><![CDATA[This field-effect transistor adopts a P-type design and is suitable for high current, low internal resistance application scenarios. Its maximum withstand current is 20A, rated voltage is up to 30V, and the typical internal resistance value is 36mR. VGS is 20V, ensuring stable working performance. This component has excellent stability and efficient current processing capability, making it suitable for a variety of high-performance electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HD6355-F(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6355-f-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:32:30</pubDate>
	<description><![CDATA[This field-effect transistor has a current carrying capacity of 50A and a working voltage of 30V, with a typical internal resistance of 15m Ω, making it suitable for high-performance applications. Its P-type structure is paired with a 20V VGS to ensure stable performance. Suitable for key circuits such as power management and signal amplification, improving system stability and efficiency.]]></description>
</item>
<item>
	<title><![CDATA[HD5153(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd5153-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:32:17</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HD6351(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6351-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:32:06</pubDate>
	<description><![CDATA[This field-effect transistor has a current carrying capacity of 20A, a working voltage of 30V, and a typical internal resistance of 36m Ω. Its VGS is 20V, belonging to P-type field-effect transistor. Suitable for electronic control systems that require high efficiency and low loss, such as power management, signal amplification, and other critical applications.]]></description>
</item>
<item>
	<title><![CDATA[HXY30P02D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy30p02d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:31:28</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HXY50P03D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy50p03d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:31:17</pubDate>
	<description><![CDATA[This field-effect transistor has a current carrying capacity of 50A and a voltage tolerance of 30V, with a typical internal resistance of 9.5m Ω, making it suitable for high-performance applications. Its P-type design ensures optimal dynamic response at a gate source voltage of 20V. Suitable for key circuits such as power management and signal amplification.]]></description>
</item>
<item>
	<title><![CDATA[50N06(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/50n06-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:31:04</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts an efficient TO-252-2L package, with a 60V high voltage resistance and strong 50A current carrying capacity. Specially designed for high-performance consumer electronics devices, achieving low resistance, high-speed switching, significantly improving system efficiency and stability, it is an ideal semiconductor component choice for optimizing power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[2N60L(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/2n60l-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:30:52</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a compact TO-252-2L package, with a rated withstand voltage of up to 650V and can stably handle 2A currents. Specially designed for high efficiency and low loss high-voltage switch applications, widely applicable to various consumer electronics products, it is an ideal semiconductor component for optimizing power management solutions and improving system reliability.]]></description>
</item>
<item>
	<title><![CDATA[2N65(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/2n65-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:30:39</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-252-2L packaging, with high voltage resistance of 650V and 2A current processing capability. Specially designed for consumer electronic devices in high-voltage environments, to achieve efficient and low loss switch control, ensuring stable and safe system operation, it is an ideal semiconductor component for optimizing power management.]]></description>
</item>
<item>
	<title><![CDATA[4N65(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/4n65-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:30:27</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a compact TO-252-2L package, with a rated voltage of up to 650V and a current capacity of 4A. Specially designed for consumer electronics devices in high-pressure environments, providing excellent switching performance and energy efficiency to ensure stable system operation, it is an ideal choice for power management applications.]]></description>
</item>
<item>
	<title><![CDATA[HXY20P10D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy20p10d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:30:15</pubDate>
	<description><![CDATA[This field-effect transistor has a current carrying capacity of 20A and can operate stably at a voltage of 100V. Its typical internal resistance value is 90m Ω, VGS is 20V, and it belongs to P-type. Suitable for various application scenarios, such as power management, signal amplification, etc., to ensure efficient and stable operation of the circuit. Choose it to add reliability and efficiency to your design.]]></description>
</item>
<item>
	<title><![CDATA[HD8305(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd8305-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:30:03</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 7, Voltage/V: 650, Internal Resistance Typ/mR: 1200, VGS: 30, Type: N,     (Ordering Information):  Product Code: H104461     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY4N65D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4n65d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:29:50</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-252-2L packaging, with excellent 650V high voltage withstand level and 4A current carrying capacity. Especially suitable for consumer electronic switch applications that require high voltage stability, effectively improving system efficiency and ensuring safe and reliable operation, it is an ideal semiconductor component choice for high-voltage environment design.]]></description>
</item>
<item>
	<title><![CDATA[7N65(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/7n65-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:29:38</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a compact TO-252-2L package, which has excellent 650V high voltage resistance and 7A current processing ability. Specially designed for demanding consumer electronic switch applications, effectively improving system energy efficiency and stability, it is an ideal semiconductor device for optimizing circuits in high-voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[HD7255(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd7255-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:29:26</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 30, voltage/V: 100, internal resistance Typ/mR: 48, VGS: 20, type: P,     (Ordering Information):  Product Code: H104452     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[30N06(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/30n06-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:29:14</pubDate>
	<description><![CDATA[This product is a consumer grade N-channel MOSFET, packaged in an efficient TO-252-2L package. Equipped with 60V withstand voltage and 30A current carrying capacity, suitable for various medium and low voltage switch circuits, it can effectively improve system energy efficiency, stable and reliable, and is the ideal choice for your electronic product design.]]></description>
</item>
<item>
	<title><![CDATA[HXY7N65D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy7n65d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:29:02</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts an efficient packaging TO-252-2L, with excellent 650V operating voltage and 7A continuous current carrying capacity. Specially designed for high voltage and low loss power conversion and switching applications, it is widely used in various high-quality electronic devices with excellent stability and energy efficiency performance.]]></description>
</item>
<item>
	<title><![CDATA[HXY30P10D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy30p10d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:28:49</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 30, voltage/V: 100, internal resistance Typ/mR: 48, VGS: 20, type: P,     (Ordering Information):  Product Code: H104447     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HD7253(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd7253-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:28:37</pubDate>
	<description><![CDATA[This field-effect transistor has a current carrying capacity of 20A, a maximum operating voltage of 100V, and a typical internal resistance of 90m Ω, making it suitable for high-speed switch applications. Its P-type characteristics make it perform well in various circuit designs. Reliable performance meets various application requirements and ensures the stable operation of the system.]]></description>
</item>
<item>
	<title><![CDATA[HD6954(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6954-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:28:25</pubDate>
	<description><![CDATA[Our HD6954 is a high-performance MOSFET that can be used as a STN442D STANSON An ideal alternative to It has the characteristics of low conduction resistance, high-speed switching characteristics, and good thermal stability]]></description>
</item>
<item>
	<title><![CDATA[HD6758(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6758-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:28:12</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 60, Voltage/V: 40, Internal Resistance Typ/mR: 7.7, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104431     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY60N04D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy60n04d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:28:00</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 60, Voltage/V: 40, Internal Resistance Typ/mR: 7, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104428     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HD6960(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6960-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:27:48</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 15, Voltage/V: 60, Internal Resistance Typ/mR: 38, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104427     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[20N06(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/20n06-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:27:35</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts advanced TO-252-2L packaging and is a high-performance N-channel device with a rated voltage of up to 60V and a continuous current carrying capacity of 20A. It is suitable for various power conversion and switching applications and has excellent energy efficiency and stability performance.]]></description>
</item>
<item>
	<title><![CDATA[HD6758-F(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6758-f-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:27:23</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 60, Voltage/V: 40, Internal Resistance Typ/mR: 7, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104423     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HD6962(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6962-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:27:11</pubDate>
	<description><![CDATA[Our HD6962 is a high-performance MOSFET that can be used as a DMN6040SK3 DIODES An ideal alternative to It has the characteristics of low conduction resistance, high-speed switching characteristics, and good thermal stability]]></description>
</item>
<item>
	<title><![CDATA[HXY20N06D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy20n06d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:26:59</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 20, voltage/V: 60, internal resistance Typ/mR: 27, VGS: 20, type: N,     (Ordering Information):  Product Code: H104420     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[5N50(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/5n50-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:26:47</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-252-2L packaging, with a high voltage resistance of up to 500V and stable 5A current processing ability. Specially designed for switch applications in high-voltage environments, widely used in various consumer electronics products, ensuring high efficiency, low loss, and excellent system stability performance.]]></description>
</item>
<item>
	<title><![CDATA[25N06(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/25n06-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:26:34</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a TO-252-2L package, with a rated voltage of 60V and a continuous current processing capacity of up to 30A. Specially designed for high-performance switching power supplies and load drivers, suitable for various consumer electronics products, ensuring high efficiency, low loss, and excellent system stability.]]></description>
</item>
<item>
	<title><![CDATA[HXY15N06D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy15n06d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:26:22</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 15, Voltage/V: 60, Internal Resistance Typ/mR: 38, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104414     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY120N03D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy120n03d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:26:10</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 120, Voltage/V: 30, Internal Resistance Typ/mR: 3, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104413     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AOD558(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod558-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:25:58</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET is packaged in TO-252-2L, with a rated voltage of 30V and a maximum continuous current of up to 80A. It is designed specifically for high-power electronic devices such as power converters and motor drive systems, providing excellent switching performance and low loss performance.]]></description>
</item>
<item>
	<title><![CDATA[HD6364(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6364-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:25:46</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 120, Voltage/V: 30, Internal Resistance Typ/mR: 3, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104405     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[30N03A(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/30n03a-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:25:33</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-252-2L packaging, with a rated voltage of 30V and a maximum continuous current of up to 100A. It is designed specifically for high-power and high current applications such as power conversion and motor drive, providing excellent switching performance and low loss performance.]]></description>
</item>
<item>
	<title><![CDATA[HD6360(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6360-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:25:21</pubDate>
	<description><![CDATA[Our HD6360 is a high-performance MOSFET that can be used as a FDD8896 onsemi An ideal alternative to It has the characteristics of low conduction resistance, high-speed switching characteristics, and good thermal stability]]></description>
</item>
<item>
	<title><![CDATA[IRLR8726T(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlr8726t-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:25:09</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET is packaged in TO-252-2L and has a rated voltage of 30V and a continuous current carrying capacity of up to 80A. It is designed specifically for high current, high-efficiency power conversion, and motor drive applications, providing excellent switching performance and low loss performance.]]></description>
</item>
<item>
	<title><![CDATA[HD6352(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6352-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:24:57</pubDate>
	<description><![CDATA[Our HD6352 is a high-performance MOSFET that can be used as a SM480T9RL SPS An ideal alternative to It has the characteristics of low conduction resistance, high-speed switching characteristics, and good thermal stability]]></description>
</item>
<item>
	<title><![CDATA[HXY80N02D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy80n02d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:24:44</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 80, Voltage/V: 20, Internal Resistance Typ/mR: 3.5, VGS: 12, Type: N,     (Ordering Information):  Product Code: H104397     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY80N03D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy80n03d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:24:32</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET is packaged in TO-252-2L and has a rated voltage of 30V and a strong continuous current capacity of 80A. It is designed specifically for applications such as high-efficiency power conversion and high current motor drive, providing excellent switching performance and low loss advantages to meet the needs of high-end consumer electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HD6358(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6358-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:24:20</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 60, Voltage/V: 30, Internal Resistance Typ/mR: 7, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104393     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HD6356(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6356-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:24:08</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 50, Voltage/V: 30, Internal Resistance Typ/mR: 7.5, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104392     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY50N03D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy50n03d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:23:55</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 50, Voltage/V: 30, Internal Resistance Typ/mR: 7.5, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104390     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[FDD306P(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdd306p-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:23:43</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET is packaged in TO-252-2L and has a rated voltage of 20V and continuous current processing capacity of up to 60A. It is designed specifically for high current application scenarios, such as power conversion and high-power load control, to achieve efficient and low loss switching operations.]]></description>
</item>
<item>
	<title><![CDATA[HD5158(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd5158-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:23:19</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 60, Voltage/V: 20, Internal Resistance Typ/mR: 6, VGS: 12, Type: N,     (Ordering Information):  Product Code: H104382     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HD5158-F(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd5158-f-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:23:07</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 60, Voltage/V: 20, Internal Resistance Typ/mR: 5, VGS: 12, Type: N,     (Ordering Information):  Product Code: H104380     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HD5152(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd5152-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:22:54</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 20, voltage/V: 20, internal resistance Typ/mR: 16, VGS: 12, type: N,     (Ordering Information):  Product Code: H104374     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY50N10D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy50n10d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:22:42</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 50, Voltage/V: 100, Internal Resistance Typ/mR: 18, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104371     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY30N02D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy30n02d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:22:30</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 30, voltage/V: 20, internal resistance Typ/mR: 12, VGS: 20, type: N,     (Ordering Information):  Product Code: H104370     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY20N02D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy20n02d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:22:18</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 20, voltage/V: 20, internal resistance Typ/mR: 16, VGS: 12, type: N,     (Ordering Information):  Product Code: H104369     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HD5154(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd5154-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:22:05</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 30, voltage/V: 20, internal resistance Typ/mR: 12, VGS: 20, type: N,     (Ordering Information):  Product Code: H104366     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HD7260(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd7260-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:21:53</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 50, Voltage/V: 100, Internal Resistance Typ/mR: 18, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104365     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY10N65F(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy10n65f-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:21:29</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts the classic TO-220F package, with a rated voltage of up to 650V and can withstand 10A continuous current. It is suitable for power conversion and motor control applications in high voltage and high current electronic devices, providing a stable and reliable high-performance switching solution.]]></description>
</item>
<item>
	<title><![CDATA[HXY20N65F(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy20n65f-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:21:04</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-220F      Parameter Introduction:Current/A: 20, Voltage/V: 650, Internal Resistance Typ/mR: 380, VGS: 30, Type: N,     (Ordering Information):  Product Code: H104348     Minimum packaging: 50pcs      Gross weight/gram :2.436g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[NTD6416ANT4G(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntd6416ant4g-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:20:52</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-252-2L packaging, with a 100V withstand voltage and a continuous current carrying capacity of up to 20A. It is designed specifically for high-performance electronic devices and is applied in power conversion, motor control and other fields, providing excellent power switching efficiency and stability.]]></description>
</item>
<item>
	<title><![CDATA[15N10(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/15n10-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:20:40</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-252-2L packaging, with a rated voltage of 100V and a maximum continuous current of 15A. It is designed specifically for efficient power conversion, motor drive and other applications, providing excellent switching performance and low loss power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[12N65(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/12n65-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:20:16</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-220F packaging, with a high voltage resistance of 650V and a high current carrying capacity of 12A. It is designed specifically for high-power electronic devices and is used in power conversion, motor drive and other applications, providing excellent switching performance and stable and reliable power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[HD7254(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd7254-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:20:04</pubDate>
	<description><![CDATA[Our HD7254 is a high-performance MOSFET that can be used as a DMN10H170SK3 DIODES An ideal alternative to It has the characteristics of low conduction resistance, high-speed switching characteristics, and good thermal stability]]></description>
</item>
<item>
	<title><![CDATA[HXY7N65F(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy7n65f-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:19:52</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts the classic TO-220F package, with a rated voltage of up to 650V and a continuous current of up to 7A, suitable for high voltage and high current power conversion and switch control applications. Provide powerful and stable power management solutions for electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY3139CI(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3139ci-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:19:40</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET features an ultra compact SOT-523 package with a rated voltage of 20V and a continuous current capacity of 0.6A, designed specifically for low-power electronic devices. Suitable for applications such as power conversion and load switching, it combines compact size with high efficiency performance.]]></description>
</item>
<item>
	<title><![CDATA[HM6910(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hm6910-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:19:28</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-89      Parameter Introduction:Current/A: 10, Voltage/V: 60, Internal Resistance Typ/mR: 40, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104329     Minimum packaging: 1000pcs      Gross weight/gram :0.147g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY15N06SI(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy15n06si-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:19:16</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-89      Parameter Introduction:Current/A: 15, Voltage/V: 60, Internal Resistance Typ/mR: 30, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104326     Minimum packaging: 1000pcs      Gross weight/gram :0.147g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[7N65(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/7n65-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:19:04</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET is packaged in TO-220F and has a breakdown voltage of up to 650V and a continuous current carrying capacity of 7A. It is suitable for power conversion and switch control applications in high voltage and high current electronic devices. Excellent performance to meet stringent circuit requirements.]]></description>
</item>
<item>
	<title><![CDATA[HF8325(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hf8325-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:18:52</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-220F      Parameter Introduction:Current/A: 7, Voltage/V: 650, Internal Resistance Typ/mR: 1200, VGS: 30, Type: N,     (Ordering Information):  Product Code: H104324     Minimum packaging: 50pcs      Gross weight/gram :2.436g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY3400SI(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3400si-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:18:39</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-89      Parameter Introduction:Current/A: 6, Voltage/V: 30, Internal Resistance Typ/mR: 20, VGS: 12, Type: N,     (Ordering Information):  Product Code: H104323     Minimum packaging: 1000pcs      Gross weight/gram :0.147g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HM6912(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hm6912-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:18:27</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-89      Parameter Introduction:Current/A: 15, Voltage/V: 60, Internal Resistance Typ/mR: 30, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104317     Minimum packaging: 1000pcs      Gross weight/gram :0.147g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[2N7002T(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/2n7002t-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:18:15</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-523 micro packaging, with 60V high voltage resistance and 0.1A current processing ability, designed specifically for compact, low-power electronic devices, achieving fine power management and efficient switching functions.]]></description>
</item>
<item>
	<title><![CDATA[HXY10N06SI(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy10n06si-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:18:03</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-89      Parameter Introduction:Current/A: 10, Voltage/V: 60, Internal Resistance Typ/mR: 40, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104311     Minimum packaging: 1000pcs      Gross weight/gram :0.147g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HM6332(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hm6332-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:17:51</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-89      Parameter Introduction:Current/A: 6, Voltage/V: 30, Internal Resistance Typ/mR: 20, VGS: 12, Type: N,     (Ordering Information):  Product Code: H104310     Minimum packaging: 1000pcs      Gross weight/gram :0.147g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY2101EI(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy2101ei-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:17:39</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET is packaged in an ultra small SOT-323 package, with a rated voltage of 20V and a maximum continuous current of 1.8A. It is designed for low energy consumption, high efficiency power management, and electronic device switching applications. Its exquisite volume combined with excellent performance provides excellent circuit control solutions.]]></description>
</item>
<item>
	<title><![CDATA[2N7002KW(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/2n7002kw-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:17:27</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET is packaged in SOT-323 and has a high breakdown voltage of 60V and a current capacity of 0.1A, making it particularly suitable for power management and precise switching applications in low-power electronic devices. The combination of its miniature size and efficient performance provides an ideal circuit design solution.]]></description>
</item>
<item>
	<title><![CDATA[2N7002W(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/2n7002w-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:17:15</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a miniature SOT-323 package, with high voltage resistance of 60V and a maximum continuous current of 0.1A. It is designed specifically for low-power electronic devices and is suitable for precision power management and efficient switch control. Compact size combined with excellent performance, providing flexible and reliable circuit solutions.]]></description>
</item>
<item>
	<title><![CDATA[2N7002KDW(SOT-363)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/2n7002kdw-sot-363-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:17:03</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts a compact SOT-363 package, integrating dual N-channel technology, with a rated voltage of up to 60V and a maximum continuous current of 0.1A. It is particularly suitable for high voltage and low-power electronic device power management and fine control applications. Small size and excellent performance combine to provide precise and efficient circuit solutions.]]></description>
</item>
<item>
	<title><![CDATA[HXY30P10MI(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy30p10mi-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:16:51</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23-3L      Parameter Introduction:Current/A: 10, Voltage/V: 30, Internal Resistance Typ/mR: 14, VGS: 20, Type: P,     (Ordering Information):  Product Code: H104296     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[2N7002DW(SOT-363)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/2n7002dw-sot-363-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:16:39</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts the SOT-363 micro package, which includes a dual N-channel structure, with a rated voltage of up to 60V and a maximum continuous current of 0.1A. It is suitable for precision power management and efficient switching applications in low-power electronic devices. Its compact size and high-performance design provide flexible and reliable circuit solutions.]]></description>
</item>
<item>
	<title><![CDATA[HM6311(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hm6311-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:16:26</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23-3L      Parameter Introduction:Current/A: 10, Voltage/V: 30, Internal Resistance Typ/mR: 14, VGS: 20, Type: P,     (Ordering Information):  Product Code: H104292     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[3439KDW(SOT-363)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/3439kdw-sot-363-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:16:14</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts a compact SOT-363 package, integrated N+P channel design, rated voltage of 20V, maximum continuous current of 0.8A, suitable for power conversion and intelligent switch control of low-power electronic devices. Its compact size and high efficiency provide flexible and reliable solutions for circuit design.]]></description>
</item>
<item>
	<title><![CDATA[HXY2102EI(SOT-323)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy2102ei-sot-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:16:03</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET is packaged in a miniature SOT-323 package, with a rated voltage of 20V and a maximum continuous current of up to 2A. It is designed for efficient power management and low-power switching applications in electronic devices. Its compact size combined with excellent performance provides excellent system integration solutions.]]></description>
</item>
<item>
	<title><![CDATA[AO3415A(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3415a-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:15:51</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts a compact SOT-23-3L package with P-channel characteristics, operating voltage up to 20V, and can continuously provide 4.1A current, especially suitable for power conversion and electronic device switch control applications. With its miniaturized design and excellent performance, it effectively improves system efficiency and ensures stable operation.]]></description>
</item>
<item>
	<title><![CDATA[HM6303-F(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hm6303-f-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:15:38</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23-3L      Parameter Introduction:Current/A: 4.2, Voltage/V: 30, Internal Resistance Typ/mR: 41, VGS: 12, Type: P,     (Ordering Information):  Product Code: H104278     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HM6309(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hm6309-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:15:26</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23-3L      Parameter Introduction:Current/A: 6, Voltage/V: 30, Internal Resistance Typ/mR: 28, VGS: 20, Type: P,     (Ordering Information):  Product Code: H104276     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY2333MI(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy2333mi-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:15:02</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts SOT-23-3L packaging, with a P-channel structure, working voltage up to 20V, maximum continuous current of 7A, suitable for various power conversion and switch control applications. Compact design combined with excellent performance provides efficient and low loss power management solutions for electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SSM3J332R(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ssm3j332r-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:14:50</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23-3L      Parameter Introduction:Current/A: 4.2, Voltage/V: 30, Internal Resistance Typ/mR: 45, VGS: 12, Type: P,     (Ordering Information):  Product Code: H104269     Minimum packaging: 3000pcs      Gross weight/gram :0.038g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HM6307(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hm6307-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:14:38</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23-3L      Parameter Introduction:Current/A: 4.1, Voltage/V: 30, Internal Resistance Typ/mR: 42, VGS: 20, Type: P,     (Ordering Information):  Product Code: H104268     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY20P07MI(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy20p07mi-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:14:26</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23-3L      Parameter Introduction:Current/A: 7, Voltage/V: 20, Internal Resistance Typ/mR: 20, VGS: 12, Type: P,     (Ordering Information):  Product Code: H104265     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AO3401(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3401-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:14:13</pubDate>
	<description><![CDATA[This consumer grade MOSFET is packaged in SOT-23-3L and features a P-channel design. It has a breakdown voltage of 30V and a maximum continuous current capacity of 4.2A, making it suitable for various power switch control and conversion applications. With its compact size and excellent performance, it has become an ideal choice for efficient and low loss solutions in electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HM5121(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hm5121-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:14:01</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23-3L      Parameter Introduction:Current/A: 7, Voltage/V: 20, Internal Resistance Typ/mR: 20, VGS: 12, Type: P,     (Ordering Information):  Product Code: H104261     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY3401MI(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3401mi-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:13:49</pubDate>
	<description><![CDATA[This consumer grade MOSFET is packaged in SOT-23-3L and features P-channel technology. It has a rated voltage of up to 30V and can withstand 4.2A continuous current, making it suitable for various power conversion and switch control scenarios. Its exquisite size combined with excellent performance provides efficient and stable power management solutions for electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SI2333(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2333-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:13:37</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts a compact SOT-23-3L package, with P-channel characteristics, rated voltage of 20V, and can stably carry 7A current. It is suitable for power management and efficient switching applications of various electronic devices. Its excellent performance and compact size provide an ideal low conductivity and high reliability solution for design.]]></description>
</item>
<item>
	<title><![CDATA[HXY30P06MI(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy30p06mi-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:13:25</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23-3L      Parameter Introduction:Current/A: 6, Voltage/V: 30, Internal Resistance Typ/mR: 28, VGS: 20, Type: P,     (Ordering Information):  Product Code: H104255     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AO3404(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3404-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:13:12</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts a compact SOT-23-3L package, with an N-channel structure and a rated voltage of up to 30V. It can withstand a stable 5A current and is suitable for power switching and conversion control of various electronic devices. Its excellent performance and compact size provide efficient and reliable power management solutions for circuit design.]]></description>
</item>
<item>
	<title><![CDATA[HM6304(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hm6304-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:13:00</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23-3L      Parameter Introduction:Current/A: 5.8, Voltage/V: 30, Internal Resistance Typ/mR: 21, VGS: 12, Type: N,     (Ordering Information):  Product Code: H104249     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HM5104(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hm5104-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:12:48</pubDate>
	<description><![CDATA[Our HM5104 is a high-performance MOSFET that can be used as a FDN028N20 onsemi An ideal alternative to It has the characteristics of low conduction resistance, high-speed switching characteristics, and good thermal stability]]></description>
</item>
<item>
	<title><![CDATA[HXY2300MI(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy2300mi-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:12:35</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23-3L packaging and is designed specifically for 20V voltage systems, with 6A high current processing capability. It has low on resistance and fast switching characteristics, and is widely used in scenarios such as chargers and power converters, providing efficient and stable power control functions.]]></description>
</item>
<item>
	<title><![CDATA[HXYG5N10MI(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxyg5n10mi-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:12:23</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23-3L      Parameter Introduction:Current/A: 5, Voltage/V: 100, Internal Resistance Typ/mR: 100, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104237     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HM6304-F(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hm6304-f-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:12:11</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23-3L      Parameter Introduction:Current/A: 5.8, Voltage/V: 30, Internal Resistance Typ/mR: 24, VGS: 12, Type: N,     (Ordering Information):  Product Code: H104234     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HM7210(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hm7210-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:11:59</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23-3L      Parameter Introduction:Current/A: 5, Voltage/V: 100, Internal Resistance Typ/mR: 100, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104231     Minimum packaging: 3000pcs      Gross weight/gram :0.033g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY3404MI(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3404mi-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:11:47</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23-3L packaging and is designed specifically for 30V voltage systems, with a strong 5A current carrying capacity. It has low conduction resistance and fast switching characteristics, and is widely used in devices such as chargers and power converters to achieve efficient and stable power control functions.]]></description>
</item>
<item>
	<title><![CDATA[AO3401(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3401-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:11:35</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging and is suitable for 30V voltage systems, providing 4.2A high current processing capacity. Featuring excellent low conduction resistance and fast switching performance, it is widely used in chargers, power converters, and other applications to achieve efficient, stable, and reliable power control.]]></description>
</item>
<item>
	<title><![CDATA[HXY5P04I(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy5p04i-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:11:23</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 5, Voltage/V: 40, Internal Resistance Typ/mR: 47, VGS: 20, Type: P,     (Ordering Information):  Product Code: H104219     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HI6309(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hi6309-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:11:11</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 6, Voltage/V: 30, Internal Resistance Typ/mR: 28, VGS: 20, Type: P,     (Ordering Information):  Product Code: H104218     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[DMP4065S-7(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp4065s-7-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:10:59</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging, with a rated voltage of 40V and a strong current carrying capacity of 5A. It has low conduction resistance and fast switching performance, and is widely used in devices such as chargers and power converters to achieve efficient and stable power control and management.]]></description>
</item>
<item>
	<title><![CDATA[HXY30P06AI(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy30p06ai-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:10:47</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 6, Voltage/V: 30, Internal Resistance Typ/mR: 28, VGS: 20, Type: P,     (Ordering Information):  Product Code: H104215     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SI2307A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2307a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:10:34</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a compact SOT-23 package, designed specifically for 30V voltage systems, and has a 4.2A high current processing capacity. Featuring excellent low conduction resistance and fast switching performance, it is widely used in chargers, power converters, and other applications, providing efficient and stable power control solutions.]]></description>
</item>
<item>
	<title><![CDATA[HXY2319AI(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy2319ai-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:10:22</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 5, Voltage/V: 40, Internal Resistance Typ/mR: 68, VGS: 20, Type: P,     (Ordering Information):  Product Code: H104199     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY2305CI(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy2305ci-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:10:10</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 4.2, Voltage/V: 20, Internal Resistance Typ/mR: 48, VGS: 12, Type: P,     (Ordering Information):  Product Code: H104196     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY3401I-ED(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3401i-ed-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:09:58</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 3, voltage/V: 20, internal resistance Typ/mR: 100, VGS: 12, type: P,     (Ordering Information):  Product Code: H104195     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[FDN304P(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdn304p-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:09:46</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging, suitable for 20V voltage systems, and has 5A high current processing capacity. With its excellent low conduction resistance and fast switching performance, it is widely used in scenarios such as chargers and power converters to achieve efficient and stable power control and switching functions.]]></description>
</item>
<item>
	<title><![CDATA[HI5107-G(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hi5107-g-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:09:34</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 4.2, Voltage/V: 20, Internal Resistance Typ/mR: 48, VGS: 12, Type: P,     (Ordering Information):  Product Code: H104191     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HI5107(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hi5107-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:09:22</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 5, Voltage/V: 20, Internal Resistance Typ/mR: 35, VGS: 12, Type: P,     (Ordering Information):  Product Code: H104190     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HI5121(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hi5121-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:09:09</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 3, voltage/V: 20, internal resistance Typ/mR: 100, VGS: 12, type: P,     (Ordering Information):  Product Code: H104178     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HI6301(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hi6301-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:08:57</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 4.2, Voltage/V: 30, Internal Resistance Typ/mR: 45, VGS: 12, Type: P,     (Ordering Information):  Product Code: H104174     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HI6305(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hi6305-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:08:45</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 4.1, Voltage/V: 30, Internal Resistance Typ/mR: 48, VGS: 20, Type: P,     (Ordering Information):  Product Code: H104169     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SI2303(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2303-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:08:33</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a small SOT-23 package and is suitable for 20V voltage systems, providing a 2.3A current carrying capacity. Equipped with low conduction resistance and fast switching performance, it is widely used in power control modules of chargers, power converters, and electronic devices to achieve efficient and stable circuit management.]]></description>
</item>
<item>
	<title><![CDATA[BSN20BKR(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsn20bkr-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:08:21</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 packaging, with a rated voltage of 60V and a rated current of 0.3A, suitable for low to medium power applications. Featuring low conduction resistance and fast switching characteristics, it is widely used in battery protection, signal switching, and other applications to achieve precise and efficient power management and control.]]></description>
</item>
<item>
	<title><![CDATA[HI5119(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hi5119-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:08:09</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 7, Voltage/V: 20, Internal Resistance Typ/mR: 20, VGS: 12, Type: P,     (Ordering Information):  Product Code: H104158     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[FDN5630(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdn5630-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:07:56</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 packaging and is suitable for 60V voltage systems, with 3A high current processing capability. It has low on resistance and fast switching characteristics, and is widely used in fields such as chargers and power converters to achieve efficient and stable power control and conversion functions.]]></description>
</item>
<item>
	<title><![CDATA[HXY6005I(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy6005i-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:07:44</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 5, Voltage/V: 60, Internal Resistance Typ/mR: 42, VGS: 20, Type: N,     (Ordering Information):  Product Code: H103733     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[FDN340P(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdn340p-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:07:32</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging and is suitable for 20V voltage systems with a rated current of 3A. It has low conduction resistance and fast switching performance, and is widely used in chargers, power converters, and various electronic devices to achieve efficient and energy-saving power control and management.]]></description>
</item>
<item>
	<title><![CDATA[HI5105-F(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hi5105-f-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:07:20</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 2.3, Voltage/V: 20, Internal Resistance Typ/mR: 120, VGS: 12, Type: P,     (Ordering Information):  Product Code: H104149     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[2N7002(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/2n7002-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:07:07</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 packaging, with a rated voltage of 60V and a maximum continuous current of 0.3A. Having low on resistance and fast switching characteristics, it is suitable for applications such as battery protection and load switching, and is an ideal semiconductor component for achieving fine power control in small electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HI6908(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hi6908-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:06:55</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 5, Voltage/V: 60, Internal Resistance Typ/mR: 42, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104146     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[FDN338P(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdn338p-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:06:43</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging and is suitable for 20V voltage systems, providing 2.3A current processing capability. Having low conduction resistance and fast switching performance, it is widely used in scenarios such as battery protection and power management, making it an ideal choice for efficient power control in electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SI2333CDS(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2333cds-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:06:30</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a small SOT-23 package, with a rated voltage of 20V and a high current carrying capacity of up to 7A. With its low conduction resistance and fast switching characteristics, it is widely used in high-efficiency electronic devices such as battery protection and power conversion to achieve stable and reliable power control.]]></description>
</item>
<item>
	<title><![CDATA[HXY7002AI(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy7002ai-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:06:18</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a SOT-23 small package, with a withstand voltage of up to 60V, suitable for precision control scenarios as low as 0.3A current. Equipped with fast switching and low conduction resistance characteristics, it is widely used in battery protection, power management, and signal switching of various electronic devices, providing efficient and reliable power conversion solutions.]]></description>
</item>
<item>
	<title><![CDATA[HXY3404I(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3404i-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:06:06</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 5.8, Voltage/V: 30, Internal Resistance Typ/mR: 22, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104132     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HI6702(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hi6702-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:05:54</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 5, Voltage/V: 40, Internal Resistance Typ/mR: 30, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104130     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[RK7002BMT116(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/rk7002bmt116-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:05:42</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 packaging, with a withstand voltage of up to 60V and a rated current of 0.3A. Suitable for applications such as battery protection and low-power switching, it has excellent low conduction resistance and fast switching performance, making it an ideal choice for modern electronic devices to achieve efficient power control.]]></description>
</item>
<item>
	<title><![CDATA[HI6304(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hi6304-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:05:30</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 5.8, Voltage/V: 30, Internal Resistance Typ/mR: 22, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104127     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BS170FTA(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bs170fta-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:05:18</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 packaging, with a rated voltage of 60V and a current capacity of 0.3A. Specially designed for low to medium power applications, with excellent switching performance and low on resistance, widely used in battery management, signal switching and other fields, achieving precise power control and efficient operation.]]></description>
</item>
<item>
	<title><![CDATA[NX7002AK(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nx7002ak-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:05:06</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a compact SOT-23 package, designed specifically for a 60V voltage environment, with a rated current of 0.3A. Equipped with low conduction resistance and fast switching characteristics, it is widely used in battery protection, signal switching, and various low to medium current electronic devices to achieve precise and efficient power control.]]></description>
</item>
<item>
	<title><![CDATA[FDN359BN(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdn359bn-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:04:51</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 packaging, suitable for 30V voltage environments, and has a high current processing capacity of 5.8A. With its low conduction resistance and fast switching characteristics, it is widely used in chargers, power management, and various high-efficiency electronic devices to achieve precise and reliable power conversion and control functions.]]></description>
</item>
<item>
	<title><![CDATA[HI6302(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hi6302-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:04:37</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 5.8, Voltage/V: 30, Internal Resistance Typ/mR: 28, VGS: 12, Type: N,     (Ordering Information):  Product Code: H104117     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SI2306A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2306a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:04:25</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 packaging and is designed specifically for 30V voltage systems, with a high current processing capacity of up to 5.8A. It has superior low conduction resistance and fast switching performance, and is widely used in chargers, power converters, and various high-power electronic devices to achieve efficient and reliable power management and switching functions.]]></description>
</item>
<item>
	<title><![CDATA[HI6902(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hi6902-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:04:13</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 0.3, Voltage/V: 60, Internal Resistance Typ/mR: 1000, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104112     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SI2304A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2304a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:04:01</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a compact SOT-23 package, with a rated voltage of 30V and a high current processing capacity of up to 5.8A. It has low conduction resistance and fast switching performance, and is widely used in chargers, power converters, and high-power electronic devices to achieve efficient and stable power control functions.]]></description>
</item>
<item>
	<title><![CDATA[HI5112(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hi5112-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:03:49</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 6, Voltage/V: 20, Internal Resistance Typ/mR: 14, VGS: 12, Type: N,     (Ordering Information):  Product Code: H104109     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[2SK3018(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/2sk3018-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:03:37</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a compact SOT-23 package, designed specifically for 30V voltage systems, providing precise 0.1A current control. Equipped with low conduction resistance and fast switching performance, it is particularly suitable for low-power electronic applications such as battery protection and signal switching, achieving efficient and energy-saving power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[HXY3402I(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3402i-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:03:24</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 5, Voltage/V: 30, Internal Resistance Typ/mR: 33, VGS: 12, Type: N,     (Ordering Information):  Product Code: H104099     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY2320BI(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy2320bi-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:03:12</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 7, Voltage/V: 20, Internal Resistance Typ/mR: 15, VGS: 12, Type: N,     (Ordering Information):  Product Code: H104097     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SI2312A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2312a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:03:00</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a small SOT-23 package, designed specifically for 20V voltage applications, with a continuous current carrying capacity of up to 6A. With its excellent low conduction resistance and fast switching characteristics, it is widely used in chargers, power converters, and various high-efficiency electronic devices, providing stable and reliable power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[HI5106(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hi5106-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:02:48</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 3, voltage/V: 20, internal resistance Typ/mR: 23, VGS: 12, type: N,     (Ordering Information):  Product Code: H104093     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HI5110(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hi5110-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:02:36</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 7, Voltage/V: 20, Internal Resistance Typ/mR: 15, VGS: 12, Type: N,     (Ordering Information):  Product Code: H104091     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HI6306(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hi6306-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:02:24</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 5, Voltage/V: 30, Internal Resistance Typ/mR: 33, VGS: 12, Type: N,     (Ordering Information):  Product Code: H104090     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[NX3008NBK(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nx3008nbk-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:02:11</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 packaging and is designed specifically for 30V voltage systems, with a rated current of up to 5A. Featuring superior low conduction resistance and fast switching characteristics, it is suitable for chargers, power converters, and various high-efficiency electronic devices to achieve precise and reliable power control and management.]]></description>
</item>
<item>
	<title><![CDATA[HI5102(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hi5102-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:01:59</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 6, Voltage/V: 20, Internal Resistance Typ/mR: 22, VGS: 12, Type: N,     (Ordering Information):  Product Code: H104083     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY3416I(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3416i-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:01:47</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 6, Voltage/V: 20, Internal Resistance Typ/mR: 14, VGS: 12, Type: N,     (Ordering Information):  Product Code: H104082     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HI7206(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hi7206-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:01:35</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 3, Voltage/V: 100, Internal Resistance Typ/mR: 210, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104081     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HI7208(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hi7208-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:01:23</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 5, Voltage/V: 100, Internal Resistance Typ/mR: 110, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104078     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY3400I-ED(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3400i-ed-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:01:10</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 3, voltage/V: 20, internal resistance Typ/mR: 45, VGS: 12, type: N,     (Ordering Information):  Product Code: H104076     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HI5108-F(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hi5108-f-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:00:58</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 3, voltage/V: 20, internal resistance Typ/mR: 45, VGS: 12, type: N,     (Ordering Information):  Product Code: H104068     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[NDS331N(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nds331n-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:00:46</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a compact SOT-23 package, designed specifically for 20V voltage systems, with a rated current of up to 2.3A. The device has low on resistance and excellent switching performance, and is widely used in chargers, power converters, and various electronic devices to achieve efficient and stable power control and management.]]></description>
</item>
<item>
	<title><![CDATA[FDN335N(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdn335n-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:00:34</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a small SOT-23 package, with a rated voltage of 20V, and can carry up to 2.3A continuous current. Specially designed for chargers, power management, and various efficient electronic devices, it has excellent low on resistance and fast switching performance, making it an ideal choice for achieving precise power control.]]></description>
</item>
<item>
	<title><![CDATA[HXY4407AS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4407as-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:00:22</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOP-8      Parameter Introduction:Current/A: 12, Voltage/V: 30, Internal Resistance Typ/mR: 10, VGS: 20, Type: P,     (Ordering Information):  Product Code: H104053     Minimum packaging: 3000pcs      Gross weight/gram :0.13g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AO4421(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4421-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 03:00:10</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOP-8 packaging and is designed specifically for 60V voltage applications, providing up to 6A continuous current carrying capacity. The device has low conduction resistance and excellent switching performance, suitable for battery protection, power switching, and power control of high-performance electronic devices, ensuring stable system operation and efficient energy conservation.]]></description>
</item>
<item>
	<title><![CDATA[APM4953(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/apm4953-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:59:58</pubDate>
	<description><![CDATA[This consumer grade P+P channel MOSFET adopts SOP-8 packaging and is designed specifically for 30V voltage systems, providing dual P channel efficient conduction. With a rated current of 5.3A, it is particularly suitable for scenarios such as battery protection and power management. It has low on resistance and fast switching performance, making it an ideal bidirectional power control solution in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BSS169H6327(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss169h6327-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:59:46</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a small SOT-23 package, with a rated voltage of up to 100V, suitable for fine control applications as low as 0.2A current. Specially designed for battery protection, signal switching, and high-performance electronic devices, it has excellent switching performance and low on resistance, making it an ideal semiconductor component choice in micro power systems.]]></description>
</item>
<item>
	<title><![CDATA[HXY4485S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4485s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:59:34</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOP-8      Parameter Introduction:Current/A: 13, Voltage/V: 40, Internal Resistance Typ/mR: 14, VGS: 20, Type: P,     (Ordering Information):  Product Code: H104032     Minimum packaging: 3000pcs      Gross weight/gram :0.13g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY4435AS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4435as-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:59:21</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOP-8      Parameter Introduction:Current/A: 11, Voltage/V: 30, Internal Resistance Typ/mR: 14, VGS: 20, Type: P,     (Ordering Information):  Product Code: H104018     Minimum packaging: 3000pcs      Gross weight/gram :0.13g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HS6335(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hs6335-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:59:09</pubDate>
	<description><![CDATA[Our IRF9388TRPBF is a high-performance MOSFET that can be used as a FDS6675 onsemi An ideal alternative to It has the characteristics of low conduction resistance, high-speed switching characteristics, and good thermal stability]]></description>
</item>
<item>
	<title><![CDATA[HXY4403S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4403s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:58:57</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a compact SOP-8 package, designed specifically for 30V voltage systems, providing 6A continuous current processing capability. Suitable for applications such as battery protection, power switches, and load control, it has low conduction resistance and fast switching performance, ensuring efficient, stable, and reliable power management in various consumer electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SI4559ADY(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4559ady-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:58:44</pubDate>
	<description><![CDATA[This consumer grade N+P channel MOSFET is packaged in SOP-8 and is suitable for 60V voltage environments with a rated current of 6A. The dual channel design supports positive and negative voltage control and is widely used in battery management, power converters, and other scenarios. It has low on resistance and efficient switching performance, making it an ideal bidirectional power switching component for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SI9945BDY-T1(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si9945bdy-t1-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:58:32</pubDate>
	<description><![CDATA[This SOP-8 packaged consumer grade dual N-channel MOSFET is designed for high voltage and high current applications, with a rated voltage of 60V and a continuous passing current of up to 6.5A. Excellent switching efficiency and low conduction resistance make it an ideal choice for chargers, power modules, and high-performance electronic devices, ensuring reliable and energy-saving performance in various power conversion scenarios.]]></description>
</item>
<item>
	<title><![CDATA[HXY4614AS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4614as-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:58:20</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOP-8      Parameter Introduction:Current/A: 7.2, Voltage/V: 40, Internal Resistance Typ/mR: 23, VGS: 20, Type: N+P,     (Ordering Information):  Product Code: H103972     Minimum packaging: 3000pcs      Gross weight/gram :0.13g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY9928S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy9928s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:58:08</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOP-8      Parameter Introduction:Current/A: 8, voltage/V: 20, internal resistance Typ/mR: 13, VGS: 12, type: N+N,     (Ordering Information):  Product Code: H103963     Minimum packaging: 3000pcs      Gross weight/gram :0.13g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY4832S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4832s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:57:55</pubDate>
	<description><![CDATA[This consumer grade N+N channel MOSFET adopts SOP-8 packaging, integrates dual channel technology, has a rated voltage of 30V, and a continuous current of up to 10A. Specially designed for efficient power conversion, load balancing, and battery management systems, it has high integration and energy efficiency performance, meeting the multi-channel control requirements of modern electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HS6332-G(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hs6332-g-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:57:43</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOP-8      Parameter Introduction:Current/A: 15, Voltage/V: 30, Internal Resistance Typ/mR: 8, VGS: 20, Type: N,     (Ordering Information):  Product Code: H103944     Minimum packaging: 3000pcs      Gross weight/gram :0.13g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY4406S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4406s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:57:31</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOP-8 packaging, with a rated voltage of 30V and a continuous current of 8.5A. Specially designed for medium to low power applications such as power conversion, load switch control, and battery management systems, it has the characteristics of miniaturization and high efficiency, making it an ideal semiconductor component for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HS7232(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hs7232-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:57:19</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOP-8      Parameter Introduction:Current/A: 10, Voltage/V: 100, Internal Resistance Typ/mR: 110, VGS: 20, Type: N,     (Ordering Information):  Product Code: H103937     Minimum packaging: 3000pcs      Gross weight/gram :0.13g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY4406S-C(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4406s-c-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:57:06</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOP-8      Parameter Introduction:Current/A: 15, Voltage/V: 30, Internal Resistance Typ/mR: 8, VGS: 20, Type: N,     (Ordering Information):  Product Code: H103934     Minimum packaging: 3000pcs      Gross weight/gram :0.13g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY10N10S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy10n10s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:56:54</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOP-8      Parameter Introduction:Current/A: 10, Voltage/V: 100, Internal Resistance Typ/mR: 110, VGS: 20, Type: N,     (Ordering Information):  Product Code: H103930     Minimum packaging: 3000pcs      Gross weight/gram :0.13g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY80P04NF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy80p04nf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:56:42</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN5X6-8L      Parameter Introduction:Current/A: 80, Voltage/V: 40, Internal Resistance Typ/mR: 5, VGS: 20, Type: P,     (Ordering Information):  Product Code: H103928     Minimum packaging: 5000pcs      Gross weight/gram :0.137g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HN6773(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hn6773-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:56:30</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN5X6-8L      Parameter Introduction:Current/A: 80, Voltage/V: 40, Internal Resistance Typ/mR: 5, VGS: 20, Type: P,     (Ordering Information):  Product Code: H103925     Minimum packaging: 5000pcs      Gross weight/gram :0.137g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AO4406(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4406-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:56:17</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOP-8 packaging, with a rated voltage of 30V and a continuous current of up to 8.5A. Suitable for low to medium power power conversion, load switching, and battery management system applications, with efficient and miniaturized design, providing ideal semiconductor solutions for modern electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HXY70P03NF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy70p03nf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:56:05</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN5X6-8L      Parameter Introduction:Current/A: 70, Voltage/V: 30, Internal Resistance Typ/mR: 6, VGS: 20, Type: P,     (Ordering Information):  Product Code: H103914     Minimum packaging: 5000pcs      Gross weight/gram :0.137g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HN6375(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hn6375-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:55:53</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN5X6-8L      Parameter Introduction:Current/A: 50, Voltage/V: 30, Internal Resistance Typ/mR: 9, VGS: 20, Type: P,     (Ordering Information):  Product Code: H103908     Minimum packaging: 5000pcs      Gross weight/gram :0.137g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HN6379(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hn6379-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:55:40</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN5X6-8L      Parameter Introduction:Current/A: 70, Voltage/V: 30, Internal Resistance Typ/mR: 6, VGS: 20, Type: P,     (Ordering Information):  Product Code: H103901     Minimum packaging: 5000pcs      Gross weight/gram :0.137g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HN6774(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hn6774-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:55:28</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN5X6-8L      Parameter Introduction:Current/A: 60, Voltage/V: 40, Internal Resistance Typ/mR: 6.9, VGS: 20, Type: N,     (Ordering Information):  Product Code: H103889     Minimum packaging: 5000pcs      Gross weight/gram :0.137g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HN6772(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hn6772-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:55:16</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN5X6-8L      Parameter Introduction:Current/A: 50, Voltage/V: 40, Internal Resistance Typ/mR: 11, VGS: 20, Type: N,     (Ordering Information):  Product Code: H103882     Minimum packaging: 5000pcs      Gross weight/gram :0.137g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY60N04NF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy60n04nf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:54:52</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN5X6-8L      Parameter Introduction:Current/A: 60, Voltage/V: 40, Internal Resistance Typ/mR: 6.9, VGS: 20, Type: N,     (Ordering Information):  Product Code: H103873     Minimum packaging: 5000pcs      Gross weight/gram :0.137g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HN6390(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hn6390-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:54:28</pubDate>
	<description><![CDATA[Our HN6390 is a high-performance MOSFET that can be used as a BSC025N03MS G Infineon An ideal alternative to It has the characteristics of low conduction resistance, high-speed switching characteristics, and good thermal stability]]></description>
</item>
<item>
	<title><![CDATA[HN6384(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hn6384-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:54:16</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN5X6-8L      Parameter Introduction:Current/A: 70, Voltage/V: 30, Internal Resistance Typ/mR: 5.7, VGS: 20, Type: N,     (Ordering Information):  Product Code: H103859     Minimum packaging: 5000pcs      Gross weight/gram :0.137g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HN6388(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hn6388-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:54:04</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN5X6-8L      Parameter Introduction:Current/A: 150, Voltage/V: 30, Internal Resistance Typ/mR: 3, VGS: 20, Type: N,     (Ordering Information):  Product Code: H103856     Minimum packaging: 5000pcs      Gross weight/gram :0.137g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY70N03NF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy70n03nf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:53:52</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts DFN5X6-8L packaging, with a rated voltage of 30V and a continuous current of up to 70A. Suitable for efficient power conversion, motor drive, and battery management systems, with its excellent power density and heat dissipation performance, it meets the needs of modern electronic devices for high current processing capabilities.]]></description>
</item>
<item>
	<title><![CDATA[HXY15P06DF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy15p06df-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:53:39</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN3X3-8L      Parameter Introduction:Current/A: 15, Voltage/V: 60, Internal Resistance Typ/mR: 70, VGS: 20, Type: P,     (Ordering Information):  Product Code: H103847     Minimum packaging: 5000pcs      Gross weight/gram :0.064g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AON6362(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon6362-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:53:27</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts DFN5X6-8L packaging, with a rated voltage of 30V and a continuous current of up to 70A. Specially designed for high power density and high-efficiency applications, suitable for power conversion, motor drive, and battery management systems, providing excellent heat dissipation performance and space utilization.]]></description>
</item>
<item>
	<title><![CDATA[HN6386(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hn6386-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:53:15</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN5X6-8L      Parameter Introduction:Current/A: 80, Voltage/V: 30, Internal Resistance Typ/mR: 4.7, VGS: 20, Type: N,     (Ordering Information):  Product Code: H103838     Minimum packaging: 5000pcs      Gross weight/gram :0.137g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY50P02DF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy50p02df-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:53:03</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts DFN3X3-8L packaging, with high efficiency and compact design. Rated voltage of 20V, continuous current of up to 50A, suitable for power conversion, load control, and battery management systems, providing excellent power processing capabilities and space optimization solutions for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HN5177(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hn5177-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:52:51</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN3X3-8L      Parameter Introduction:Current/A: 48, Voltage/V: 20, Internal Resistance Typ/mR: 7.5, VGS: 12, Type: P,     (Ordering Information):  Product Code: H103835     Minimum packaging: 5000pcs      Gross weight/gram :0.064g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY20N06DF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy20n06df-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:52:39</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN3X3-8L      Parameter Introduction:Current/A: 20, voltage/V: 60, internal resistance Typ/mR: 31, VGS: 20, type: N,     (Ordering Information):  Product Code: H103814     Minimum packaging: 5000pcs      Gross weight/gram :0.064g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HN6982(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hn6982-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:52:26</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN3X3-8L      Parameter Introduction:Current/A: 20, voltage/V: 60, internal resistance Typ/mR: 31, VGS: 20, type: N,     (Ordering Information):  Product Code: H103812     Minimum packaging: 5000pcs      Gross weight/gram :0.064g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HN6974(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hn6974-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:52:14</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN3X3-8L      Parameter Introduction:Current/A: 40, voltage/V: 60, internal resistance Typ/mR: 12, VGS: 20, type: N,     (Ordering Information):  Product Code: H103804     Minimum packaging: 5000pcs      Gross weight/gram :0.064g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY40N06DF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy40n06df-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:52:02</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN3X3-8L      Parameter Introduction:Current/A: 40, voltage/V: 60, internal resistance Typ/mR: 12, VGS: 20, type: N,     (Ordering Information):  Product Code: H103789     Minimum packaging: 5000pcs      Gross weight/gram :0.064g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HN6380(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hn6380-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:51:46</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN3X3-8L      Parameter Introduction:Current/A: 100, voltage/V: 30, internal resistance Typ/mR: 4, VGS: 20, type: N,     (Ordering Information):  Product Code: H103788     Minimum packaging: 5000pcs      Gross weight/gram :0.064g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HN6374(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hn6374-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:51:33</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN3X3-8L      Parameter Introduction:Current/A: 50, Voltage/V: 30, Internal Resistance Typ/mR: 7.5, VGS: 20, Type: N,     (Ordering Information):  Product Code: H103786     Minimum packaging: 5000pcs      Gross weight/gram :0.064g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[DMN26D0UFB4-7(DFN1006-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmn26d0ufb4-7-dfn1006-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:51:22</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a super miniature DFN1006-3L package, with a rated voltage of 20V and a maximum continuous current of 0.7A. Specially designed for low-power, compact circuits, suitable for small power conversion, signal switching, and battery protection applications, providing excellent energy efficiency and space utilization.]]></description>
</item>
<item>
	<title><![CDATA[HN6378(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hn6378-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:51:09</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN3X3-8L      Parameter Introduction:Current/A: 80, Voltage/V: 30, Internal Resistance Typ/mR: 4.7, VGS: 20, Type: N,     (Ordering Information):  Product Code: H103779     Minimum packaging: 5000pcs      Gross weight/gram :0.064g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HN6376(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hn6376-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:50:57</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN3X3-8L      Parameter Introduction:Current/A: 60, Voltage/V: 30, Internal Resistance Typ/mR: 6, VGS: 20, Type: N,     (Ordering Information):  Product Code: H103769     Minimum packaging: 5000pcs      Gross weight/gram :0.064g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HN6372(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hn6372-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:50:45</pubDate>
	<description><![CDATA[Our HN6372 is a high-performance MOSFET that can be used as a BSZ130N03MS G Infineon An ideal alternative to It has the characteristics of low conduction resistance, high-speed switching characteristics, and good thermal stability]]></description>
</item>
<item>
	<title><![CDATA[IRLR3410TRPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlr3410trpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:50:09</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET is packaged in TO-252-2L, with a rated voltage of 100V and a continuous current of up to 15A. It is suitable for efficient circuit design in various power conversion, load switch control, and low to medium power electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IPD068P03L3G(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ipd068p03l3g-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:49:57</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts TO-252-2L packaging, with a rated voltage of 30V and a continuous current carrying capacity of up to 80A. Suitable for applications such as medium to high power power conversion, motor drive, and reverse current protection, it provides powerful and efficient switch control solutions for circuit design with excellent performance and stability.]]></description>
</item>
<item>
	<title><![CDATA[BSC067N06LS3G(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc067n06ls3g-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:49:45</pubDate>
	<description><![CDATA[This N-type field-effect transistor has a current carrying capacity of 80A and a voltage tolerance of 60V, with a typical internal resistance of 5.3m Ω, making it suitable for high-performance power management. Its VGS is 20V, ensuring stable switch control. Suitable for power conversion systems with strict requirements, providing reliable performance and durability.]]></description>
</item>
<item>
	<title><![CDATA[BSC066N06NS(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bsc066n06ns-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:49:20</pubDate>
	<description><![CDATA[This product is an N-type field-effect transistor with a current carrying capacity of 80A and a voltage tolerance of 60V. The typical internal resistance value is 5.3m Ω, and the gate source voltage VGS is 20V. Suitable for application scenarios that require high current and low internal resistance, ensuring stable system operation. Choosing this component can optimize circuit performance and improve overall reliability.]]></description>
</item>
<item>
	<title><![CDATA[IRFR5305TRPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr5305trpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:49:08</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts TO-252-2L packaging, with a rated voltage of 60V, providing efficient and stable 20A current processing capability. Specially designed for medium and high voltage switch applications, widely used in various consumer electronics products, achieving excellent power conversion efficiency and system stability performance.]]></description>
</item>
<item>
	<title><![CDATA[SI4435DYTRPBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si4435dytrpbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:48:56</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET is packaged in SOP-8 and is particularly suitable for circuit designs with limited space. Rated voltage of 30V, capable of carrying a maximum continuous current of 11A, it is an ideal choice for power conversion, load switching, and preventing reverse current, helping electronic products achieve efficient and low loss power management.]]></description>
</item>
<item>
	<title><![CDATA[IRF8707TRPBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf8707trpbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:48:43</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a compact SOP-8 package, with a rated voltage of 30V and a maximum continuous current of 13A, designed specifically for high-performance circuits. Suitable for power conversion, load switching, and logic control of medium power systems, it meets the needs of modern electronic products with its excellent conductivity and small size advantages.]]></description>
</item>
<item>
	<title><![CDATA[IRF9388TRPBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf9388trpbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:48:31</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOP-8 packaging, with a rated voltage of 30V and a continuous current processing capacity of 12A, suitable for various low to medium power application scenarios, such as power management, load switching, and reverse current protection. Its miniaturized design balances high efficiency and space saving needs, making it an ideal choice for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRFR1205TRPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr1205trpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:48:19</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-252-2L packaging, with a leakage source voltage of 60V and a maximum continuous current of 30A, suitable for various efficient power conversion, motor drive, and medium to high power switch control scenarios. With excellent performance and stability, it provides strong power support for circuit design.]]></description>
</item>
<item>
	<title><![CDATA[IRLML6402TRPBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml6402trpbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:48:07</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a compact SOT-23 package, with a rated voltage of 20V and a maximum continuous current of 4.2A. It is suitable for low voltage, small volume power switching, load switching, and reverse current protection applications, especially suitable for efficient and space limited circuit designs.]]></description>
</item>
<item>
	<title><![CDATA[TPH1R403NL(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/tph1r403nl-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:47:42</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET features a compact DFN5X6-8L package with excellent power density. Rated voltage of 30V, peak current of up to 150A, especially suitable for circuit design with limited space and requiring efficient switching control, such as power conversion, load switching, and battery management systems.]]></description>
</item>
<item>
	<title><![CDATA[IRFB4115PBF(TO-220S)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfb4115pbf-to-220s-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-11 02:47:30</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts the classic TO-220 packaging and is designed specifically for high-power applications. It has a leakage source withstand voltage of 150V and a continuous current processing capacity of up to 120A, suitable for various power conversion, motor drive, and high current switching situations, providing excellent energy efficiency and reliability.]]></description>
</item>
<item>
	<title><![CDATA[AO3407(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3407-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:26:11</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET is packaged in SOT-23-3L, with a rated voltage of up to 30V and a continuous current carrying capacity of 4.1A, suitable for various power conversion and switch control scenarios. Its exquisite size and excellent performance combine to provide efficient and stable power management solutions for electronic design.]]></description>
</item>
<item>
	<title><![CDATA[AO3400(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3400-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:26:00</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts a compact SOT-23-3L package, with an efficient N-channel design, a rated voltage of 30V, and a maximum continuous current of 5.8A. It is suitable for various power conversion and switching applications, and provides stable and reliable power management solutions for electronic devices with its excellent performance and compact size.]]></description>
</item>
<item>
	<title><![CDATA[SI2300(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2300-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:25:49</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts SOT-23-3L packaging, with N-channel characteristics, working voltage up to 20V, can withstand 6A continuous current, suitable for power management and switch control of various electronic devices, compact size, and superior performance.]]></description>
</item>
<item>
	<title><![CDATA[AO3407(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3407-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:25:38</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a compact SOT-23 package, with a rated voltage of 30V and can withstand 4.1A continuous current. Equipped with low conduction resistance and fast switching performance, it is widely used in fields such as chargers and power converters, providing efficient and stable power control solutions for electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SI2333(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2333-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:25:28</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a miniaturized SOT-23 package, designed specifically for 20V voltage systems, with a rated current of up to 7A. Featuring low conduction resistance and fast switching characteristics, it is widely used in battery protection, power management, and various high-efficiency electronic devices to achieve precise and reliable power conversion and control functions.]]></description>
</item>
<item>
	<title><![CDATA[AO3400(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3400-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:25:17</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a compact SOT-23 package, with a rated voltage of 30V and can withstand a large current of 5.8A. Featuring excellent low conduction resistance and fast switching performance, it is widely used in charging devices, power management, and high-efficiency electronic systems, providing efficient and stable power conversion and control functions.]]></description>
</item>
<item>
	<title><![CDATA[SI2300(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2300-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:25:06</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 packaging and is suitable for 20V voltage systems, providing up to 6A continuous current processing capability. Equipped with low conduction resistance and fast switching performance, it is widely used in chargers, power converters, and various high-efficiency electronic devices to achieve excellent power control and management.]]></description>
</item>
<item>
	<title><![CDATA[AOD603(TO-252-4L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod603-to-252-4l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:24:55</pubDate>
	<description><![CDATA[This consumer grade N+P channel MOSFET adopts TO-252-4L packaging, with 60V high voltage resistance and efficient 20A current processing capacity. Specially designed for bipolar power conversion applications, widely used in various medium and high voltage consumer electronics products, achieving excellent energy efficiency and system stability performance.]]></description>
</item>
<item>
	<title><![CDATA[AOD609(TO-252-4L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod609-to-252-4l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:24:44</pubDate>
	<description><![CDATA[This consumer grade N+P channel MOSFET adopts TO-252-4L packaging, with a rated voltage of 40V and stable and efficient 20A current processing capacity. Specially designed for medium and low voltage bipolar power conversion applications, widely used in various consumer electronics products, ensuring excellent energy efficiency and system stability performance.]]></description>
</item>
<item>
	<title><![CDATA[AOD607(TO-252-4L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod607-to-252-4l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:24:33</pubDate>
	<description><![CDATA[This consumer grade N+P channel MOSFET adopts TO-252-4L packaging, with a rated voltage of 30V and a high-efficiency 20A current processing capacity. Specially designed for bipolar power conversion and switching applications, suitable for various consumer electronics products, providing excellent system efficiency and stability performance, it is an ideal choice for optimizing circuits.]]></description>
</item>
<item>
	<title><![CDATA[AOD409(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod409-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:24:22</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts TO-252-2L packaging, with 60V high voltage resistance and powerful 50A current processing ability. Specially designed for medium and high voltage high current application scenarios, widely used in various consumer electronics products, providing excellent power conversion efficiency and system stability performance.]]></description>
</item>
<item>
	<title><![CDATA[AOD407(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod407-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:24:01</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET is packaged in TO-252-2L, with a working voltage of up to 60V, and can stably handle 10A currents. Specially designed for power management of consumer electronic devices in medium and high voltage environments, to achieve efficient and stable switch control, it is an ideal semiconductor component for optimizing system performance.]]></description>
</item>
<item>
	<title><![CDATA[IRFR9024NTRPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr9024ntrpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:23:50</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts TO-252-2L packaging, with 60V high voltage resistance and 10A current processing ability. Specially designed for low-voltage switch applications, suitable for power management and conversion needs in various consumer electronics products, providing efficient and low loss system solutions.]]></description>
</item>
<item>
	<title><![CDATA[DMP4051LK3-13(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp4051lk3-13-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:23:39</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a TO-252-2L package, with a rated voltage of 40V, providing stable 25A current processing capability. Specially designed for medium and low voltage, high-efficiency switch applications, suitable for various consumer electronics products, ensuring excellent power conversion efficiency and system stability performance.]]></description>
</item>
<item>
	<title><![CDATA[AOD403(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod403-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:23:28</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts TO-252-2L packaging, with a rated voltage of 30V and strong current processing capacity of up to 80A. Specially designed for low-voltage electronic devices with high load and high efficiency, achieving excellent switching performance and energy consumption control, it is an ideal semiconductor device choice for optimizing power management systems.]]></description>
</item>
<item>
	<title><![CDATA[AOD417(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod417-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:23:17</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts TO-252-2L packaging, with a rated voltage of 30V and strong 40A current processing capability. Specially designed for efficient and low loss consumer electronic switch applications, it effectively improves system performance and energy-saving effects, making it an ideal semiconductor component choice for optimizing power management solutions in low-voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[SM4286T9RL(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm4286t9rl-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:23:06</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-252-2L packaging, with 100V high voltage resistance and 20A continuous current processing ability, designed specifically for high-performance electronic devices, applied in power conversion, motor drive and other fields, providing low loss and high-efficiency switch control functions.]]></description>
</item>
<item>
	<title><![CDATA[IRFR024NT(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr024nt-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:22:55</pubDate>
	<description><![CDATA[This consumer grade MOSFET is packaged in TO-252-2L and is a high-performance N-channel semiconductor device with a maximum operating voltage of 60V and a continuous current processing capacity of 30A. Suitable for various applications such as power conversion and switching circuits, with its excellent energy efficiency, high reliability, and compact design, it effectively improves the performance of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[AOD478(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod478-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:22:44</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-252-2L packaging, with 100V high voltage resistance and up to 20A continuous current processing ability, suitable for high-performance application scenarios such as power conversion and motor drive, providing excellent switching performance and stable and reliable power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[AOD2610E(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod2610e-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:22:22</pubDate>
	<description><![CDATA[This consumer grade MOSFET is packaged in TO-252-2L and is a high-power N-channel semiconductor device with a rated voltage of 60V and an astonishing current carrying capacity of 80A. Specially designed for efficient power conversion and switching applications, it has become an ideal choice for modern high-performance electronic devices with excellent stability and energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[FQD50N06(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fqd50n06-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:22:11</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts TO-252-2L packaging and is a high specification N-channel semiconductor device with a working voltage of 60V and strong 50A current processing capability. Specially designed for various power conversion and switching applications, with excellent energy efficiency and stability, it meets the needs of modern electronic devices for high-performance MOSFETs.]]></description>
</item>
<item>
	<title><![CDATA[AOD442(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod442-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:22:01</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-252-2L packaging, with a working voltage of 60V and a high current processing capacity of up to 50A. Specially designed to optimize the switch performance of modern consumer electronics products, it has the characteristics of high efficiency and low loss, significantly improving system efficiency and stability, and is an ideal core component of power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[IRFR024NTRPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irfr024ntrpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:21:50</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-252-2L packaging, with a rated voltage of 60V, providing powerful 30A current processing capability. Suitable for various medium and high voltage switch applications in consumer electronics, it has high efficiency, low conduction resistance, and excellent system stability, making it an ideal choice for power conversion and load driving.]]></description>
</item>
<item>
	<title><![CDATA[AOD4130(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod4130-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:21:39</pubDate>
	<description><![CDATA[This consumer grade MOSFET is packaged in TO-252-2L and is a high-performance N-channel device with a rated voltage of 60V and a high current processing capacity of 30A. Suitable for various applications such as power conversion and switching circuits, it meets the stringent requirements of modern electronic equipment with high efficiency, low loss, and high stability.]]></description>
</item>
<item>
	<title><![CDATA[AOD4184(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod4184-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:21:28</pubDate>
	<description><![CDATA[This consumer grade MOSFET is packaged in TO-252-2L and is a high-performance N-channel device with a rated voltage of 40V and a continuous current carrying capacity of up to 60A. Specially designed for efficient and stable operation, suitable for various power conversion and switching circuit applications, providing excellent energy efficiency performance to meet stringent electronic device requirements.]]></description>
</item>
<item>
	<title><![CDATA[IRLR7843TRPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlr7843trpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:21:17</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET is packaged in TO-252-2L, with a rated voltage of 30V and a peak current of up to 120A. It is designed specifically for high-power and high current applications such as power converters and motor controllers, providing excellent switching performance and low loss advantages.]]></description>
</item>
<item>
	<title><![CDATA[IRLR8726TRPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlr8726trpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:21:06</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts advanced TO-252-2L packaging, with N-channel characteristics, rated voltage of 30V, and continuous current of up to 100A. It is suitable for various high-efficiency power conversion and switch control scenarios, with stable performance and energy-saving efficiency.]]></description>
</item>
<item>
	<title><![CDATA[AOD4132(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod4132-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:20:55</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-252-2L packaging, with a rated voltage of 30V and a maximum continuous current of 100A. It is suitable for high-power power conversion, motor drive and other applications, providing low impedance and high-efficiency switch control function to meet the requirements of high current systems.]]></description>
</item>
<item>
	<title><![CDATA[AOD4144(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod4144-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:20:44</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET is packaged in TO-252-2L, with a rated voltage of 30V and a peak current of up to 60A. It is designed specifically for efficient power conversion, high current load control, and other applications, providing excellent switching performance and low loss characteristics, making it an ideal choice for high-power consumer electronics devices.]]></description>
</item>
<item>
	<title><![CDATA[AOD480(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod480-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:20:33</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-252-2L packaging, with a rated voltage of 30V and a peak current of 20A, suitable for efficient power conversion, motor drive and other applications, providing low conduction resistance, fast switching performance, and excellent power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[60N02(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/60n02-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:20:22</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-252-2L packaging, with a rated voltage of 20V and a peak current of up to 60A. It is designed specifically for high current applications such as power conversion and motor drive, and has excellent switching performance and low loss characteristics, making it an ideal choice for high-efficiency consumer grade electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[DMG1012T-7(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg1012t-7-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:20:12</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts an ultra small SOT-523 package, with a working voltage of 20V and a current carrying capacity of 0.8A. It is designed specifically for low-power, high integration electronic devices, achieving efficient power management and precise switch control.]]></description>
</item>
<item>
	<title><![CDATA[AO6800(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao6800-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:20:01</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts SOT-23-6L packaging, integrates dual N-channel technology, has a rated voltage of 30V, and a maximum continuous current of up to 4.5A. Suitable for efficient power conversion and electronic device switch control, with its compact design and excellent performance, it provides an ideal dual channel power management solution.]]></description>
</item>
<item>
	<title><![CDATA[8205A(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/8205a-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:19:50</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts SOT-23-6L packaging, integrates a dual N-channel design, has a rated voltage of 20V, and a maximum continuous current of up to 6A. Suitable for high-efficiency power conversion and load switching applications, it combines compact structure with powerful performance to provide excellent dual channel power control solutions.]]></description>
</item>
<item>
	<title><![CDATA[AO3422(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3422-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:19:39</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a compact SOT-23-3L package, with a rated voltage of up to 60V and a maximum continuous current of 4.5A, suitable for various power conversion and electronic device switch control applications. Its outstanding performance and compact size effectively improve system efficiency, making it an ideal choice for circuit design.]]></description>
</item>
<item>
	<title><![CDATA[AO3416A(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3416a-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:19:28</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23-3L packaging technology, with a rated voltage of 20V and a high current processing capacity of 6.5A. It has excellent low conduction resistance and fast switching performance, and is widely used in fields such as chargers and power converters to achieve efficient and reliable power control.]]></description>
</item>
<item>
	<title><![CDATA[BSS83PH6327(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss83ph6327-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:19:17</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a small SOT-23 package with a rated voltage of 60V and provides 2A current processing capability. Equipped with low on resistance and fast switching characteristics, suitable for chargers, power converters, and other applications, it provides efficient and stable power control solutions for electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[LP2309LT1G(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/lp2309lt1g-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:19:06</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging, designed with a withstand voltage of up to 60V and a rated current of 2A. Equipped with low conduction resistance and fast switching performance, suitable for chargers, power management and other fields, achieving efficient and stable power control functions in electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SI2309(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2309-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:18:55</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging and is designed specifically for 60V voltage applications, providing up to 2A continuous current processing capability. It has low conduction resistance and fast switching performance, suitable for scenarios such as chargers and power conversion, achieving efficient and stable power control and management.]]></description>
</item>
<item>
	<title><![CDATA[LBSS84(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/lbss84-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:18:44</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a small SOT-23 package and is suitable for 50V voltage systems with a rated current of 0.1A. Featuring low conduction resistance and fast switching performance, it is particularly suitable for precise control scenarios such as battery protection and signal switching, providing precise and efficient power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[BSS84PH6327(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss84ph6327-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:18:34</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging and is suitable for 50V voltage systems with a rated current of 0.1A. Featuring low on resistance and fast switching performance, it is particularly suitable for low-power application scenarios such as battery protection and signal switching, achieving precise and reliable power control functions.]]></description>
</item>
<item>
	<title><![CDATA[BSS84AK(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss84ak-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:18:23</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging, designed specifically for 50V voltage applications, with a rated current of 0.1A. It has low conduction resistance and fast switching performance, especially suitable for situations that require fine power control, such as battery protection, signal switching, etc., providing efficient and stable semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[BSS84LT1G(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss84lt1g-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:18:12</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging, with a rated voltage of 50V, suitable for low current applications, and provides 0.1A current processing capacity. Featuring low on resistance and fast switching characteristics, it is particularly suitable for precise power control needs in battery protection and intelligent devices.]]></description>
</item>
<item>
	<title><![CDATA[DMP3099L-7(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp3099l-7-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:18:01</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging and is suitable for 30V voltage systems, providing up to 4.2A continuous current processing capability. Equipped with low conduction resistance and fast switching characteristics, it is widely used in scenarios such as chargers and power converters to achieve efficient and stable power control functions.]]></description>
</item>
<item>
	<title><![CDATA[IRLML5203TRPBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml5203trpbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:17:50</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a compact SOT-23 package, with a rated voltage of 30V and a high current processing capacity of 4.2A. It has excellent low conduction resistance and fast switching performance, suitable for applications such as chargers and power management, providing efficient and stable power conversion and control functions.]]></description>
</item>
<item>
	<title><![CDATA[BSS308PEH6327(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss308peh6327-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:17:39</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging and is specifically designed for 30V voltage systems, with a 4.2A high current processing capacity. With low on resistance and fast switching performance, it is widely used in fields such as chargers and power converters, providing efficient, stable and reliable power control solutions.]]></description>
</item>
<item>
	<title><![CDATA[DMP3056L-7(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmp3056l-7-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:17:28</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a small SOT-23 package, designed specifically for 30V voltage systems, and has a 4.2A high current processing capacity. It has excellent low conduction resistance and fast switching characteristics, and is widely used in chargers, power management, and various electronic devices, providing efficient and reliable power conversion and control functions.]]></description>
</item>
<item>
	<title><![CDATA[BSS308PE(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss308pe-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:17:17</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging and is designed specifically for 30V voltage systems, with a high current carrying capacity of 4.1A. It has low conduction resistance and fast switching performance, and is widely used in chargers, power converters, and various electronic devices to achieve efficient and stable power management and control.]]></description>
</item>
<item>
	<title><![CDATA[DMG3415UQ-7(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg3415uq-7-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:17:06</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a small SOT-23 package, specifically designed for 18V voltage systems, with a powerful current processing capability of 7A. With its low conduction resistance and fast switching performance, it is widely used in chargers, power converters, and other occasions to achieve efficient and reliable power control.]]></description>
</item>
<item>
	<title><![CDATA[SSM3J328R(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ssm3j328r-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:16:55</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging and is designed specifically for 18V voltage systems, providing up to 7A continuous current processing capability. Equipped with low conduction resistance and fast switching characteristics, it is widely used in fields such as battery protection and power management to achieve efficient and reliable power conversion and control functions.]]></description>
</item>
<item>
	<title><![CDATA[SI2305(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2305-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:16:40</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging and is designed specifically for 20V voltage systems with a rated current of 5A. Equipped with low conduction resistance and fast switching performance, suitable for power control and switching applications in chargers, power converters, and various electronic devices, providing efficient and stable solutions.]]></description>
</item>
<item>
	<title><![CDATA[WPM2015(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/wpm2015-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:16:29</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET is packaged in SOT-23 and is suitable for 20V voltage systems, providing 5A high current processing capability. Featuring excellent low conduction resistance and fast switching performance, it is widely used in applications such as chargers and power converters, achieving efficient and stable power control functions.]]></description>
</item>
<item>
	<title><![CDATA[NTR4101PT1G(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntr4101pt1g-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:16:18</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a small SOT-23 package, suitable for 20V voltage systems, with a rated current of up to 3A. Featuring superior low conduction resistance and fast switching performance, it is widely used in chargers, power converters, and various electronic devices to achieve efficient and stable power control functions.]]></description>
</item>
<item>
	<title><![CDATA[SI2301(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2301-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:16:07</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging and is suitable for 20V voltage systems, providing 3A current carrying capacity. It has low conduction resistance and fast switching performance, and is widely used in fields such as chargers and power management to achieve efficient and stable power conversion and control functions.]]></description>
</item>
<item>
	<title><![CDATA[5N10(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/5n10-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:15:56</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a sophisticated SOT-23 package, designed specifically for 100V voltage applications, and has a 5A high continuous current carrying capacity. With its excellent low conduction resistance and fast switching performance, it is widely used in battery protection, power conversion, and various high-efficiency electronic devices to achieve precise and reliable power control.]]></description>
</item>
<item>
	<title><![CDATA[IRLML0100TRPBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml0100trpbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:15:45</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a compact SOT-23 package, with a rated voltage of 100V and supports 3A continuous current, suitable for applications such as battery protection and power conversion. Having low conduction resistance and high-speed switching performance, it is an ideal choice for achieving efficient power control in modern electronic products.]]></description>
</item>
<item>
	<title><![CDATA[3N10(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/3n10-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:15:34</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a small SOT-23 package, designed specifically for 100V voltage systems, providing up to 3A continuous current processing capability. Featuring low conduction resistance and fast switching characteristics, it is widely used in battery protection, power conversion, and various high-efficiency electronic devices to achieve precise and reliable power control.]]></description>
</item>
<item>
	<title><![CDATA[BSS123LT1G(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss123lt1g-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:15:23</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET features a compact SOT-23 package designed specifically for 100V voltage systems with a rated current of 0.2A. Suitable for power switching, signal control and other applications in low-power electronic devices, with its superior low on resistance and fast switching characteristics, it effectively improves equipment energy efficiency and ensures stable operation.]]></description>
</item>
<item>
	<title><![CDATA[IRLML0060TRPBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml0060trpbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:15:13</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 packaging and is suitable for 60V voltage environments with a rated current of 3A. Featuring low on resistance and fast switching characteristics, it is widely used in scenarios such as chargers and power converters, providing efficient and stable power control solutions for electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SI2310(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2310-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:15:02</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 packaging, with a rated voltage of 60V and a maximum continuous current of 3A. With low conduction resistance and fast switching performance, it is suitable for applications such as chargers and power converters, providing efficient and stable power control solutions for various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BSS138LT1G(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss138lt1g-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:14:51</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 small package, designed specifically for 50V voltage systems, with a rated current of 0.2A. It has low conduction resistance and fast switching performance, especially suitable for low-power applications such as battery protection and signal switching, providing precise and efficient power control solutions.]]></description>
</item>
<item>
	<title><![CDATA[BSS138K(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss138k-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:14:40</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a small SOT-23 package, designed specifically for 50V voltage systems, providing precise 0.2A current control. Equipped with low conduction resistance and fast switching performance, it is widely used in battery protection, intelligent devices, and various small current electronic applications to achieve efficient and accurate power management.]]></description>
</item>
<item>
	<title><![CDATA[IRLML0040TRPBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml0040trpbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:14:29</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a compact SOT-23 package, with a rated voltage of 40V and supports 5A continuous current. Equipped with low conduction resistance and fast switching performance, suitable for chargers, power converters, and high-performance electronic devices, providing stable and reliable power control solutions.]]></description>
</item>
<item>
	<title><![CDATA[IRLML6344TRPBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml6344trpbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:14:18</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 packaging and is suitable for 30V voltage systems, providing a high current carrying capacity of up to 5.8A. Featuring excellent low conduction resistance and fast switching characteristics, it is particularly suitable for chargers, power modules, and high-performance electronic devices to achieve precise and stable power control and conversion requirements.]]></description>
</item>
<item>
	<title><![CDATA[IRLML0030TRPBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml0030trpbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:14:07</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a small SOT-23 package, suitable for 30V voltage systems, and provides a powerful current processing capacity of 5.8A. With excellent low conduction resistance and fast switching performance, it is an ideal choice for chargers, power converters, and high-power electronic devices, ensuring efficient and stable power control and conversion.]]></description>
</item>
<item>
	<title><![CDATA[AO3402(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3402-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:13:56</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 packaging, with a rated voltage of 30V and a continuous current of up to 5A. Featuring excellent low conduction resistance and fast switching characteristics, designed specifically for chargers, power converters, and various efficient electronic applications, achieving stable and reliable power management and control.]]></description>
</item>
<item>
	<title><![CDATA[FDN337N(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdn337n-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:13:45</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 small package, with a rated voltage of 30V and a maximum continuous current of 5A. Equipped with low conduction resistance and high-speed switching performance, it is widely used in charging equipment, power converters, and various high-efficiency electronic systems, providing stable and reliable power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[IRLML6244TRPBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml6244trpbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:13:35</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts an efficient SOT-23 packaging, designed specifically for 20V voltage systems, and has a 6A high continuous current carrying capacity. With low on resistance and fast switching performance, it is widely used in charging devices, power management, and various high-performance electronic applications, providing stable and energy-saving power conversion solutions.]]></description>
</item>
<item>
	<title><![CDATA[IRLML2502(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml2502-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:13:24</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 6, Voltage/V: 20, Internal Resistance Typ/mR: 22, VGS: 12, Type: N,     (Ordering Information):  Product Code: H104094     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SI2302(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2302-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:13:13</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET is packaged in SOT-23 and is suitable for 20V voltage systems with a rated current of 2.8A. With low conduction resistance and fast switching function, it is widely used in chargers, power management, and various electronic devices to achieve efficient and stable power conversion and control. It is an ideal energy-saving component for modern electronic products.]]></description>
</item>
<item>
	<title><![CDATA[IRLML2402TRPBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml2402trpbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:13:02</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 packaging, with a rated voltage of 20V and can withstand 2.3A continuous current, suitable for various low voltage and high efficiency electronic applications. Equipped with low conduction resistance and fast switching characteristics, it is widely used in power control of chargers, power management, and miniaturized equipment to improve system efficiency.]]></description>
</item>
<item>
	<title><![CDATA[FDV303N(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fdv303n-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:12:51</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a compact SOT-23 package, suitable for 20V voltage systems, with a rated current of 2.3A. With excellent low conduction resistance and fast switching performance, it is particularly suitable for applications in chargers, power management modules, and various efficient electronic devices, achieving precise and energy-saving power control and conversion.]]></description>
</item>
<item>
	<title><![CDATA[AO3414(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3414-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:12:40</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a small SOT-23 package, suitable for 20V voltage systems, and has a 2.3A continuous current processing capability. Specially designed for battery management, power switches, and high-performance electronic devices, it has excellent low on resistance and fast switching performance, achieving excellent power conversion and control efficiency.]]></description>
</item>
<item>
	<title><![CDATA[AO4430(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4430-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:12:29</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOP-8 packaging, with a rated voltage of 30V and a continuous current of up to 18A. Specially designed for medium to high power requirements, applied in power conversion, load switch control, and battery management systems, it has excellent energy efficiency ratio and miniaturization characteristics, meeting the compact and efficient semiconductor requirements of modern electronic products.]]></description>
</item>
<item>
	<title><![CDATA[AO4410(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4410-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:12:18</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOP-8 packaging, with a rated voltage of 30V and a continuous current of up to 18A. Specially designed for medium to high power applications, suitable for power conversion, load switching, and battery management systems, it meets the high-efficiency requirements of modern electronic products with its compact size and excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[AO4468(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4468-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:12:07</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOP-8 packaging, with a rated voltage of 30V and a continuous current of 8.5A. Suitable for low to medium power power conversion, load switch control, and battery management system applications, providing compact size and high efficiency, it is an ideal choice for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[AO4402(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4402-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:11:56</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOP-8 packaging, with a rated voltage of 20V and a continuous current of up to 20A. Specially designed for medium power electronic devices, applied in power conversion, load control, and battery management systems, providing high-performance semiconductor solutions in a compact volume.]]></description>
</item>
<item>
	<title><![CDATA[IRF7341TRPBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7341trpbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:11:45</pubDate>
	<description><![CDATA[Efficient N+N channel MOSFET, using a compact SOP-8 package, suitable for 60V voltage environment, with a strong continuous current processing capacity of 6.5A. Specially suitable for power conversion, load switching, and inverter applications in consumer electronics, its excellent low conduction resistance and high-speed switching performance ensure stable system operation and optimize energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[AO4828(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4828-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:11:34</pubDate>
	<description><![CDATA[This high-performance consumer grade MOSFET adopts SOP-8 packaging and integrates a dual N-channel design, suitable for 60V high-voltage application environments, with a maximum continuous current of 6.5A. Suitable for high-efficiency circuits such as chargers, power converters, and inverters, providing low on resistance and fast switching characteristics, effectively improving system efficiency, it is an ideal power management component for modern energy-saving electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[AO4884(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4884-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:11:24</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts SOP-8 packaging, with built-in high-efficiency N+N channel design, rated voltage of 40V, and continuous current of up to 8A. Suitable for high-power applications such as chargers, power management, inverters, etc., it has low on resistance and excellent switching performance, effectively improving system efficiency and ensuring stable operation. It is an ideal power control component for electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[AO4882(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4882-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:11:13</pubDate>
	<description><![CDATA[This consumer grade N+N channel MOSFET is designed with SOP-8 packaging for efficient power conversion. Rated voltage of 40V, continuous current of up to 8A, suitable for applications such as chargers and power control. The integrated dual N-channel structure provides excellent switching performance and low conduction resistance, making it the ideal choice for your electronic devices. Reliable quality, suitable for power conversion needs of various medium and low voltage circuits.]]></description>
</item>
<item>
	<title><![CDATA[AO4842(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4842-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:11:02</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOP-8      Parameter Introduction:Current/A: 8.5, Voltage/V: 30, Internal Resistance Typ/mR: 17, VGS: 20, Type: N+N,     (Ordering Information):  Product Code: H103946     Minimum packaging: 3000pcs      Gross weight/gram :0.202g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AO4822(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4822-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:10:51</pubDate>
	<description><![CDATA[This consumer grade N+N channel MOSFET adopts SOP-8 packaging, integrated dual channel design, rated voltage of 30V, and continuous current of up to 8.5A. Specially designed for efficient power conversion, load balancing, and battery management system applications, we provide compact and energy-efficient semiconductor solutions to meet the multi-channel control needs of modern electronic products.]]></description>
</item>
<item>
	<title><![CDATA[AO4812(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4812-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:10:40</pubDate>
	<description><![CDATA[This consumer grade N+N channel MOSFET adopts SOP-8 packaging, integrates dual channel technology, has a rated voltage of 30V, and a continuous current of 6A. Specially designed for efficient power conversion, load balancing, and battery management systems, achieving miniaturization and energy-saving optimization, it is an ideal semiconductor component for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[9926A(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/9926a-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:10:29</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts a compact SOP-8 package with built-in dual N-channel design, specifically designed for optimizing power management. Rated voltage 20V, maximum continuous current 6A, suitable for various medium and low voltage, high-efficiency switching applications. Excellent conductivity and low RDS (ON) make it an ideal choice for chargers, LED drivers, DC/DC converters, and other fields.]]></description>
</item>
<item>
	<title><![CDATA[AO4612(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4612-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:10:18</pubDate>
	<description><![CDATA[This consumer grade N+P channel MOSFET adopts SOP-8 packaging and is designed specifically for handling positive and negative polarity switching at 60V voltage, providing 5A continuous current capability. Suitable for applications such as battery management and power converters, it has a dual channel structure and superior switching performance, ensuring low conduction resistance and efficient operation. It is an ideal power control component for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[FDS4559(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds4559-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:10:07</pubDate>
	<description><![CDATA[This consumer grade N+P channel MOSFET adopts SOP-8 packaging, with a rated voltage of 60V and a continuous current of up to 6A, making it particularly suitable for battery management systems, power conversion and other occasions that require bidirectional voltage control. The device has a dual channel design, achieving high efficiency and low conduction resistance, ensuring excellent performance during positive and negative voltage switching, making it an ideal power switching component in modern electronic products.]]></description>
</item>
<item>
	<title><![CDATA[AO4614(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4614-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:09:56</pubDate>
	<description><![CDATA[This consumer grade N+P channel MOSFET adopts a compact SOP-8 package, designed specifically for bidirectional power control and efficient conversion. Rated voltage of 40V, continuous current up to 7.2A, suitable for applications such as battery management systems and AC/DC converters. Integrated bipolar channels with low conduction impedance and excellent switching performance ensure stable operation under positive and negative voltages, making them an ideal choice for circuit design.]]></description>
</item>
<item>
	<title><![CDATA[AO4606(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4606-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:09:45</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts SOP-8 packaging, integrates N+P channel structure, has a rated voltage of 30V, and a maximum continuous current of 6A. Specially designed for applications such as battery management systems and AC/DC converters, it has excellent bidirectional switching performance and low conduction resistance characteristics, effectively improving energy efficiency and ensuring stable operation under positive and negative voltages. It is an ideal choice for modern energy-saving electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SM4485PRL(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sm4485prl-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:09:35</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOP-8 packaging and is designed specifically for 40V voltage systems, providing up to 13A continuous current carrying capacity. With excellent low conduction resistance and efficient switching performance, it is suitable for battery protection, power management, and high-power load control applications, making it an ideal semiconductor component for optimizing the energy efficiency of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[AO4407(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4407-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:09:24</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a miniaturized SOP-8 package, with a rated voltage of 30V and supporting continuous current processing capacity of up to 12A. Specially designed for efficient power switch, battery protection, and load management applications, with low conduction resistance and excellent switching performance, it is an ideal choice for various medium and low voltage circuits, effectively improving system energy efficiency and ensuring stable operation.]]></description>
</item>
<item>
	<title><![CDATA[IRF7416TRPBF(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7416trpbf-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:09:13</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a compact SOP-8 package, designed specifically for 30V voltage systems, with a continuous current processing capacity of up to 9A. The device has excellent switching efficiency and low conduction resistance characteristics, and is widely used in battery protection, power management, and high-power load switching, making it an ideal choice for improving the energy efficiency of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[FDS4435A(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds4435a-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:09:02</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOP-8 packaging and is designed specifically for 30V voltage systems, with a 9A high current processing capability. With low conduction resistance and excellent switching performance, it is suitable for battery protection, power control, and various medium to high power applications, making it an ideal choice for improving the energy efficiency of consumer electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[AO4435(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4435-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:08:51</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a compact SOP-8 package, with a rated voltage of 30V, and can carry up to 9A of continuous current. Specially designed for battery management systems, power switches, and high-performance electronic devices, it has excellent low on resistance and fast switching performance, ensuring stable and efficient power conversion and control in various application scenarios.]]></description>
</item>
<item>
	<title><![CDATA[AO4459(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4459-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:08:40</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOP-8 packaging, designed specifically for low voltage and high efficiency applications. Rated voltage 30V, continuous current up to 5A, suitable for battery protection, load switching, and power management fields. Its superior conduction resistance and fast switching performance ensure excellent energy efficiency and stability in low-voltage circuits.]]></description>
</item>
<item>
	<title><![CDATA[9435(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/9435-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:08:29</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a miniaturized SOP-8 package, with a rated voltage of 30V and supports 5A continuous current, making it particularly suitable for battery management systems, power switching, and load control. The device has superior switching speed and low conduction resistance characteristics, ensuring efficient and reliable operation in various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[AO4805(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4805-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:08:18</pubDate>
	<description><![CDATA[This consumer grade P+P channel MOSFET adopts SOP-8 packaging, specifically designed for 30V systems, providing a dual P channel structure to achieve high current processing capacity, with a rated current of up to 11A. The device has excellent low conduction resistance and fast switching performance, and is widely used in battery management, power conversion, and high-power electronic devices to achieve efficient and reliable bidirectional power control.]]></description>
</item>
<item>
	<title><![CDATA[4953(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/4953-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:08:07</pubDate>
	<description><![CDATA[This consumer grade P+P channel MOSFET adopts SOP-8 packaging, with a rated voltage of 30V and a current processing capacity of 5.3A. The dual P channel design is particularly suitable for forward power control scenarios, suitable for applications such as battery protection and power switching. It has low conduction resistance and superior switching performance, making it an ideal choice for high-efficiency power devices in consumer electronics.]]></description>
</item>
<item>
	<title><![CDATA[AON6312(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon6312-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:07:56</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts DFN5X6-8L packaging, with a rated voltage of 30V and continuous current processing capacity of up to 150A. Specially designed for efficient and high current applications, suitable for power conversion, motor drive, and battery management systems, providing excellent power density and heat dissipation performance.]]></description>
</item>
<item>
	<title><![CDATA[NTMFS4C03N(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ntmfs4c03n-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:07:45</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts DFN5X6-8L packaging, with a rated voltage of 30V and a peak current of up to 150A. Specially designed for efficient power conversion, high current motor drive, and battery management systems, it has excellent power processing capabilities and thermal stability, making it an ideal choice for modern high-density electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[AON6360(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon6360-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:07:35</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts DFN5X6-8L packaging, with excellent power density. Rated voltage of 30V, continuous current of up to 120A, designed for efficient and high current applications such as power conversion, motor drive, and battery management systems, providing excellent heat dissipation performance and circuit integration.]]></description>
</item>
<item>
	<title><![CDATA[AON6566(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon6566-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:07:24</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts DFN5X6-8L packaging, with a rated voltage of 30V and a continuous current of up to 80A. Specially designed for efficient power conversion, motor drive, and battery management systems, it has excellent power processing capabilities and heat dissipation performance, making it an ideal choice for modern high-power electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[NVMFD5853NL(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvmfd5853nl-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:07:13</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts DFN5X6-8L packaging, with a rated voltage of 40V and a continuous current of up to 50A. Specially designed for efficient power conversion, motor drive, and battery management systems, with excellent power density and heat dissipation performance, it is an ideal choice for miniaturization and high-performance applications of modern electronic products.]]></description>
</item>
<item>
	<title><![CDATA[NTTFS015N04C(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nttfs015n04c-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:07:02</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts DFN5X6-8L packaging, with a rated voltage of 40V and a maximum continuous current of 50A. Specially designed for efficient power conversion, motor drive, and battery management systems, with high power density and excellent heat dissipation performance, it is an ideal miniaturization solution for modern electronic products.]]></description>
</item>
<item>
	<title><![CDATA[Si7850DP(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si7850dp-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:06:51</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts DFN5X6-8L packaging, with a rated voltage of 60V and a maximum continuous current of 30A. Suitable for efficient power conversion, motor drive, and battery management system applications, with its compact size and excellent heat dissipation performance, it provides an ideal power management solution for modern electronic products.]]></description>
</item>
<item>
	<title><![CDATA[AON7401(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon7401-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:06:40</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts DFN5X6-8L packaging, with a rated voltage of 30V and a continuous current of up to 50A. Specially designed for efficient power conversion, load switch control, and battery management systems, providing excellent energy efficiency and compact size to meet the high-performance and miniaturization needs of modern electronic products.]]></description>
</item>
<item>
	<title><![CDATA[AONR21321(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aonr21321-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:06:29</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts DFN5X6-8L packaging, with a rated voltage of 30V and a continuous current of up to 50A. Specially designed for power conversion, load switching, and battery management systems, it has excellent power processing capabilities and compact size, meeting the high-efficiency and miniaturization needs of modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[NVTFS5116PL(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nvtfs5116pl-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:06:18</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts an ultra small DFN3X3-8L package, with a rated voltage of 60V and continuous current processing capacity of 20A. Specially designed for compact and efficient power conversion, load switch control, and battery management systems, to meet the small size and high-performance requirements of modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[AON3419(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon3419-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:06:07</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET features a DFN3X3-8L package, which is compact and efficient. Rated voltage of 30V, continuous current of up to 32A, suitable for space limited power conversion, load switch control, and battery management system applications, providing excellent low conduction resistance and high power density solutions.]]></description>
</item>
<item>
	<title><![CDATA[SiS407DN(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/sis407dn-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:05:56</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts DFN3X3-8L packaging, which is compact in size and superior in performance. Rated voltage of 20V, continuous current carrying capacity of up to 30A, designed specifically for modern electronic devices, applied in power conversion, load switch control, and battery management systems, achieving a perfect combination of high efficiency and compact layout.]]></description>
</item>
<item>
	<title><![CDATA[AON3611(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon3611-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:05:45</pubDate>
	<description><![CDATA[This consumer grade N+P channel MOSFET adopts DFN3X3-8L packaging, integrates dual channel technology, has a rated voltage of 30V, and a maximum continuous current of 16A. Specially designed for modern electronic devices, suitable for power conversion, load management, and battery system control, providing efficient and compact semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[AON7264E(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon7264e-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:05:35</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a compact DFN3X3-8L package, which has excellent power density. Rated voltage 60V, continuous current up to 40A, suitable for miniaturization, high-performance power conversion, load switching, and battery management system design, achieving a perfect combination of space saving and high efficiency.]]></description>
</item>
<item>
	<title><![CDATA[NTTFS5826NL(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/nttfs5826nl-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:05:24</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts an ultra small DFN3X3-8L package, with a rated voltage of 60V and a continuous current of up to 20A. Specially designed for the miniaturization and high efficiency requirements of modern electronic products, suitable for power conversion, load switch control, and battery management system applications, achieving low loss and high integration circuit solutions.]]></description>
</item>
<item>
	<title><![CDATA[AON7534(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon7534-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:05:13</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts an extremely compact DFN3X3-8L package, with strong power processing capabilities. Rated voltage of 30V, continuous current of up to 100A, designed specifically for high-efficiency, small-sized power conversion, load switching, and battery management systems, achieving excellent current carrying and space utilization.]]></description>
</item>
<item>
	<title><![CDATA[AON7422E(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon7422e-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:05:02</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET features an extremely compact DFN3X3-8L package, with a rated voltage of 30V and a peak current of up to 80A, providing excellent power density and performance. Specially designed for miniaturization, high-efficiency power conversion, load switch control, and battery management systems, achieving the best balance between high performance and space optimization.]]></description>
</item>
<item>
	<title><![CDATA[AONR36368(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aonr36368-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:04:51</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a compact DFN3X3-8L package, providing excellent power density. The rated voltage is 30V, with a continuous current of up to 60A, suitable for miniaturized power conversion, efficient load switching, and battery management system applications, achieving an ideal combination of space saving and high performance.]]></description>
</item>
<item>
	<title><![CDATA[AON7506(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon7506-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:04:40</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts an ultra small DFN3X3-8L package, which has excellent heat dissipation performance and high power density. The rated voltage is 30V, with a continuous current of up to 50A, suitable for power conversion, load switch control, and battery management system applications with limited space, achieving high efficiency and low loss circuit design requirements.]]></description>
</item>
<item>
	<title><![CDATA[AON7430(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon7430-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:04:29</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts DFN3X3-8L packaging, which is compact and efficient, with a rated voltage of 30V and a continuous current of up to 30A. Suitable for power conversion, load switching, and battery management system applications with limited space, providing compact, high-power density semiconductor solutions for modern electronic products.]]></description>
</item>
<item>
	<title><![CDATA[5N10(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/5n10-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:04:18</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23-3L packaging technology, with a rated voltage of 100V and a 5A high current processing capability. Featuring low on resistance and fast switching performance, it is suitable for applications such as chargers and power converters, providing efficient and stable power control solutions.]]></description>
</item>
<item>
	<title><![CDATA[IRLR8726TRLPBF(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlr8726trlpbf-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:04:08</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-252-2L packaging, with a working voltage of 30V and a continuous current carrying capacity of up to 100A, suitable for high-power power conversion, motor drive and other applications, providing efficient and low loss switching control solutions.]]></description>
</item>
<item>
	<title><![CDATA[IRLML2502TRPBF(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml2502trpbf-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:03:57</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 packaging, with a rated voltage of 20V and a maximum continuous current of 6A. Specially designed for high-performance electronic applications, with low on resistance and fast switching performance, suitable for chargers, power conversion and other fields, achieving precise and reliable power control and management.]]></description>
</item>
<item>
	<title><![CDATA[BSS138NH6327(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss138nh6327-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 05:03:46</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 packaging, with a withstand voltage of up to 50V and a rated current of 0.2A. Suitable for low current applications such as battery protection and signal switching, with low on resistance and fast switching performance, it is an ideal choice for achieving fine power control in electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[74HC165(SOP-16)]]></title>
	<category domain="http://www.hxymos.com/en/shift-register/">Shift register</category>
	<link><![CDATA[http://www.hxymos.com/en/shift-register/74hc165-sop-16-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:48:11</pubDate>
	<description><![CDATA[This 8-bit shift register adopts SOP-16 packaging, with a compact structure and powerful functions. It has the ability to convert parallel or serial input data into serial output, achieving flexible data processing and transmission. The power supply voltage range is wide (2V to 6V), ensuring stable operation in different application scenarios. Suitable for application in a wide range of fields such as LED display drivers, signal processing, communication interface design, etc., it is an ideal choice to improve system performance and simplify circuit design.]]></description>
</item>
<item>
	<title><![CDATA[PCF8563(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/real-time-clock/">Real Time Clock</category>
	<link><![CDATA[http://www.hxymos.com/en/real-time-clock/pcf8563-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:48:02</pubDate>
	<description><![CDATA[This high-quality SOP-8 packaged low-power CMOS real-time clock/calendar chip is designed for high efficiency and energy conservation, and is manufactured using advanced technology. It integrates precise clock and calendar functions, with extremely low standby current, ensuring long-term stable operation under various power conditions. Whether it‘s embedded systems, IoT devices, or battery powered applications, it can provide accurate timestamp recording and date management, making it the ideal choice for your electronic products to achieve reliable real-time timing. Excellent performance, simple integration, instantly enhance your device‘s time management capabilities.]]></description>
</item>
<item>
	<title><![CDATA[74HC14(SOP-14)]]></title>
	<category domain="http://www.hxymos.com/en/inverter/">Inverter</category>
	<link><![CDATA[http://www.hxymos.com/en/inverter/74hc14-sop-14-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:47:53</pubDate>
	<description><![CDATA[This exquisite SOP-14 packaged six channel inverter integrated circuit adopts advanced manufacturing technology and has a wide range of power supply voltage adaptability (2V to 6V). It is designed specifically for high-speed, low-power logic level conversion and can effectively achieve efficient reverse transmission of 6 independent signals. Suitable for various application scenarios such as digital system interface bridging, signal waveform flipping, and level compatibility conversion, with its excellent electrical performance and compact packaging design, it greatly improves circuit board space utilization and system integration, making it an ideal choice for building complex electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[74HC04(SOP-14)]]></title>
	<category domain="http://www.hxymos.com/en/inverter/">Inverter</category>
	<link><![CDATA[http://www.hxymos.com/en/inverter/74hc04-sop-14-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:47:44</pubDate>
	<description><![CDATA[This 6-channel inverter adopts a compact SOP-14 package, designed specifically for efficient logic signal conversion. The working voltage range is wide (2V to 6V), ensuring stable operation in different system environments. Each channel can independently perform reverse output of logic levels, which is widely used in circuit interface matching, signal polarity conversion, and digital system design. It is an ideal choice to improve system compatibility and flexibility. With its high integration and low power consumption characteristics, it effectively simplifies circuit layout and enhances overall performance.]]></description>
</item>
<item>
	<title><![CDATA[TLC555(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/timertimerclock-oscillator/">CLOCK CHIP</category>
	<link><![CDATA[http://www.hxymos.com/en/timertimerclock-oscillator/tlc555-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:47:34</pubDate>
	<description><![CDATA[This exquisite SOP-8 packaged timer/timer/clock oscillator chip is designed for a wide voltage range and can operate stably between 4.5V and 15V. Integrating precise timing control and flexible frequency setting, it is suitable for various application scenarios that require precise time management, such as motor drive, LED dimming, power management, and system timing tasks. With its high efficiency, low power consumption, and easy integration, it can effectively simplify circuit design and improve the overall performance of the system, making it an ideal semiconductor solution for optimizing the timing control function of electronic products]]></description>
</item>
<item>
	<title><![CDATA[NE555(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/timertimerclock-oscillator/">CLOCK CHIP</category>
	<link><![CDATA[http://www.hxymos.com/en/timertimerclock-oscillator/ne555-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:47:25</pubDate>
	<description><![CDATA[This high-performance timer/timer/clock oscillator is packaged in SOP-8, featuring a compact size and powerful functionality. Supports a wide range of power supply voltages from 4.5V to 16V, suitable for various electronic system environments. It can accurately control time intervals, provide periodic pulses, or generate stable clock signals, and is widely used in embedded systems, home appliance control, and various timing task requirements. With its high precision and flexible configuration, it effectively improves the efficiency and reliability of system operation.]]></description>
</item>
<item>
	<title><![CDATA[L9110S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/motor-driver-chip/">Motor Driver</category>
	<link><![CDATA[http://www.hxymos.com/en/motor-driver-chip/l9110s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:47:16</pubDate>
	<description><![CDATA[This high-efficiency motor driver chip adopts SOP-8 packaging, which has a compact size and powerful performance. Supports a wide range of power supply voltages ranging from 2.2V to 12V, with a maximum output current of up to 800mA, ensuring stable and reliable motor operation in various application scenarios. Suitable for DC motor control in robots, drones, smart home devices, and various embedded systems, with its excellent current driving ability and flexible voltage adaptability, it provides strong power support for your design.]]></description>
</item>
<item>
	<title><![CDATA[L298N(ZIP-15)]]></title>
	<category domain="http://www.hxymos.com/en/motor-driver-chip/">Motor Driver</category>
	<link><![CDATA[http://www.hxymos.com/en/motor-driver-chip/l298n-zip-15-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:47:06</pubDate>
	<description><![CDATA[This advanced full bridge motor drive chip adopts ZIP-15 packaging, designed for efficient and reliable motor control. Its wide voltage range supports 2.5V to 46V, ensuring stable operation under various power supply conditions. Integrated full bridge drive architecture simplifies circuit design, making it easy to achieve precise speed regulation and commutation of two-phase or four wire motors. Suitable for robots, drones, electric vehicles, and various motor drive applications, providing excellent system integration solutions in high-performance and compact packaging.]]></description>
</item>
<item>
	<title><![CDATA[CD4538(SOP-16)]]></title>
	<category domain="http://www.hxymos.com/en/monostable-multivibrator/">Logic-IC</category>
	<link><![CDATA[http://www.hxymos.com/en/monostable-multivibrator/cd4538-sop-16-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:46:57</pubDate>
	<description><![CDATA[This high-quality monostable multiharmonic oscillator is packaged in SOP-16, featuring exquisite size and excellent performance. Its internal design is precise, with propagation delay as low as 100ns and fast response, ensuring efficient and stable system operation. Compatible with a wide range of power supply voltages from 3V to 15V, widely applicable to various electronic devices and system integration projects. Whether it‘s communication devices or consumer electronics products, they can meet your design needs with their excellent stability and flexibility.]]></description>
</item>
<item>
	<title><![CDATA[LM393DR(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/comparer/">Comparer</category>
	<link><![CDATA[http://www.hxymos.com/en/comparer/lm393dr-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:46:48</pubDate>
	<description><![CDATA[This high-performance comparator adopts a compact SOP-8 package, suitable for various precision signal detection and processing applications. Its wide power supply voltage range supports single power supply of 2V to 36V or dual power supply of ± 1V to ± 18V, ensuring stable operation in various working environments. With excellent response speed and high-precision performance, this device is widely used in power management and consumer electronics products, providing fast and accurate signal comparison functions for the system.]]></description>
</item>
<item>
	<title><![CDATA[MAX485ESA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/rs485rs422/">RS485/RS422</category>
	<link><![CDATA[http://www.hxymos.com/en/rs485rs422/max485esa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:46:39</pubDate>
	<description><![CDATA[This high-performance SOP-8 packaged RS-485/RS-422 interface chip is designed specifically for high-speed, long-distance communication applications. At a data rate of up to 2.5Mbps, stable and reliable half duplex or full duplex transmission can be ensured, easily meeting the serial communication requirements in areas such as building control and remote monitoring. Integrated with advanced signal protection and conversion technology, compatible with multiple power supply voltages, possessing excellent noise resistance and high electromagnetic compatibility. Its compact SOP-8 packaging simplifies circuit layout and is an ideal choice for building efficient and stable networks.]]></description>
</item>
<item>
	<title><![CDATA[MAX3485ESA(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/rs485rs422/">RS485/RS422</category>
	<link><![CDATA[http://www.hxymos.com/en/rs485rs422/max3485esa-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:46:29</pubDate>
	<description><![CDATA[This high-performance SOP-8 packaged RS-485/RS-422 transceiver chip is designed for high-speed communication, supporting up to 10Mbps data rate and 3.3V power supply voltage, suitable for long-distance, multi node half duplex data transmission. Integrate advanced driving and receiving technology to ensure that signals remain clear and stable in harsh environments. Compatible with RS-485 and RS-422 standards, widely used in security monitoring and building control systems, providing excellent anti-interference ability and high reliability connection solutions.]]></description>
</item>
<item>
	<title><![CDATA[MAX232ESE(SOP-16)]]></title>
	<category domain="http://www.hxymos.com/en/rs232/">RS232</category>
	<link><![CDATA[http://www.hxymos.com/en/rs232/max232ese-sop-16-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:46:18</pubDate>
	<description><![CDATA[This high-performance SOP-16 packaged RS232 interface chip is designed specifically for reliable serial communication. Stable operation at 5.5V power supply voltage, providing efficient level conversion function, perfectly compatible with TTL/CMOS and EIA/TIA-232 standards, ensuring accurate data transmission. Its compact and compact packaging form facilitates circuit layout and is suitable for serial port connection requirements in various embedded systems and communication modules. With its strong anti-interference ability and low power consumption characteristics, this chip has become an ideal choice for building stable and efficient serial communication links.]]></description>
</item>
<item>
	<title><![CDATA[24C32(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/eeprom/">EEPROM</category>
	<link><![CDATA[http://www.hxymos.com/en/eeprom/24c32-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:46:08</pubDate>
	<description><![CDATA[This high-performance EEPROM adopts a compact SOP-8 package, providing 32Kbit (4K x 8bit) of massive storage space, meeting your high requirements for data persistence storage. Adopting the I2C interface standard, ensuring fast and stable serial communication, suitable for various embedded systems and low-power application environments. Whether in consumer electronics or IoT devices, it can provide strong support for your design projects with its excellent data storage capabilities and convenient access control.]]></description>
</item>
<item>
	<title><![CDATA[24C16(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/eeprom/">EEPROM</category>
	<link><![CDATA[http://www.hxymos.com/en/eeprom/24c16-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:45:59</pubDate>
	<description><![CDATA[This high-performance EEPROM features a compact SOP-8 package with a built-in 16Kbit (2K ×  8-bit large capacity storage space to meet your high demand for data persistence storage. Using the I2C interface type, efficient and stable data transmission is achieved, with a clock frequency of up to 1MHz, ensuring fast read and write operations. Suitable for various embedded systems and consumer electronics fields, with its excellent performance and low-power characteristics, it brings flexible and reliable storage solutions to your design.]]></description>
</item>
<item>
	<title><![CDATA[24C08(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/eeprom/">EEPROM</category>
	<link><![CDATA[http://www.hxymos.com/en/eeprom/24c08-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:45:50</pubDate>
	<description><![CDATA[This high-quality semiconductor device is packaged in a compact SOP-8 package with built-in 8-Kbit EEPROM (1K x 8bit) storage capacity and an efficient I2C interface, ensuring fast and stable data transmission. Its excellent working voltage range is between 1.7V and 5.5V, suitable for various equipment environments. Whether in low-power design or wide voltage applications, it can demonstrate excellent performance and reliability, making it an ideal choice for your system design.]]></description>
</item>
<item>
	<title><![CDATA[24C04(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/eeprom/">EEPROM</category>
	<link><![CDATA[http://www.hxymos.com/en/eeprom/24c04-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:45:41</pubDate>
	<description><![CDATA[This high-performance EEPROM memory with SOP-8 packaging, equipped with I2C interface, provides up to 4Kbit (512 × The 8-bit data storage capacity ensures flexible and efficient non-volatile data management. Supports a 1MHz clock frequency, enables fast read and write operations, and is widely applicable in various application scenarios such as system configuration parameter storage and user data backup. Its compact packaging design facilitates circuit integration and has excellent durability and stability, making it an ideal choice for improving the data storage capability of electronic products.]]></description>
</item>
<item>
	<title><![CDATA[24C02(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/eeprom/">EEPROM</category>
	<link><![CDATA[http://www.hxymos.com/en/eeprom/24c02-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:45:31</pubDate>
	<description><![CDATA[This cost-effective EEPROM adopts a compact SOP-8 package with built-in 2Kbit storage capacity, providing sufficient data storage space for various microprocessors and embedded systems. Equipped with I2C interface, it supports clock frequencies from 400kHz to 1MHz, achieving fast and reliable serial data transmission. Suitable for low-power, small-sized electronic devices, such as consumer electronics and IoT applications, it is the ideal choice for achieving efficient data access in your design.]]></description>
</item>
<item>
	<title><![CDATA[UC3842(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/ac-dc-controller-and-regulator/">AC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/ac-dc-controller-and-regulator/uc3842-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:45:03</pubDate>
	<description><![CDATA[This advanced SOP-8 packaged AC-DC controller and regulator is designed for efficient power conversion. It supports a maximum input voltage of up to 30V and has a high-speed switching frequency of 500kHz, ensuring excellent power conversion performance and dynamic response speed. This device is equipped with intelligent control algorithms to achieve precise voltage regulation and efficient operation. It is widely used in chargers, adapters, and various situations that require high-performance AC-DC conversion solutions. Its compact packaging design is easy to integrate and is an ideal core component for improving the energy efficiency of your product]]></description>
</item>
<item>
	<title><![CDATA[SG3525(SOP-16)]]></title>
	<category domain="http://www.hxymos.com/en/ac-dc-controller-and-regulator/">AC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/ac-dc-controller-and-regulator/sg3525-sop-16-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:44:54</pubDate>
	<description><![CDATA[This high-performance SOP-16 packaged AC-DC controller and regulator chip is suitable for a wide voltage input range of 8V to 35V, with flexible oscillation frequency adjustment ability (100Hz to 500kHz), ensuring efficient and fast power conversion and precise voltage control. Specially designed to meet various high demand power conversion scenarios, it can effectively improve system efficiency and reduce energy consumption, especially suitable for AC-DC conversion applications of power adapters and chargers. With its excellent dynamic response performance and compact packaging design, it greatly simplifies the circuit integration process and becomes the ideal core component for building high-performance and energy-saving power systems.]]></description>
</item>
<item>
	<title><![CDATA[LMV321(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/lmv321-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:37:08</pubDate>
	<description><![CDATA[A high-performance single channel operational amplifier, designed for high-precision signal processing in a compact SOT23-5L package. It has an extremely low input offset voltage (Vos) of only 800uV, ensuring high accuracy of the output signal. Its input bias current (Ib) is as low as 10pA, effectively reducing input errors, especially suitable for high impedance sources or precision measurement systems. This device has an excellent swing rate (SR) of 0.52V/us, which can quickly respond to signal changes and achieve high-speed signal amplification and processing.]]></description>
</item>
<item>
	<title><![CDATA[LM358(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/lm358-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:36:59</pubDate>
	<description><![CDATA[This dual operational amplifier adopts an economical SOP-8 package, with excellent performance. Its input offset voltage is as low as 7mV, providing excellent signal accuracy and stability. The input bias current of each amplifier is only 150nA, effectively reducing system noise and expanding the application range. The swing rate of 0.3V/us ensures a moderate response speed, making it an ideal choice for building high-quality analog circuits in various electronic designs that require high precision, low power consumption, and stable signal amplification.]]></description>
</item>
<item>
	<title><![CDATA[LM324(SOP-14)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/lm324-sop-14-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:36:49</pubDate>
	<description><![CDATA[This four channel SOP-14 packaged operational amplifier has an ultra-low input offset voltage of 7mV, ensuring precise signal processing. The input bias current of each amplifier is only 250nA, significantly reducing power consumption and improving system stability. Its fast swing rate design of 0.4V/us makes the device perform well in high-speed applications. Combining high precision, low power consumption, and high efficiency]]></description>
</item>
<item>
	<title><![CDATA[LM321(SOT-23-5L)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/lm321-sot-23-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:36:40</pubDate>
	<description><![CDATA[This high-performance single channel operational amplifier adopts a small SOT23-5L package, focusing on providing precise signal amplification function. Its outstanding performance is reflected in: the input offset voltage (Vos) is as low as 7mV, ensuring high accuracy and stability of the output signal; The ultra-low input bias current (Ib) of only 250nA is particularly suitable for applications sensitive to input impedance, effectively reducing the impact of errors. In addition, the device has a slewing rate (SR) of 0.4V/us, which can quickly respond to signal changes and achieve efficient data acquisition and signal processing.]]></description>
</item>
<item>
	<title><![CDATA[LM258(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/lm258-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:36:31</pubDate>
	<description><![CDATA[This dual operational amplifier adopts standard SOP-8 packaging and has excellent performance indicators. Its input offset voltage is only 5mV, ensuring high-precision signal processing capability. The input bias current of each amplifier is as low as 250nA, effectively reducing system noise and improving overall stability. The design with a swing rate of 0.3V/us enables the device to have a moderate response speed, making it particularly suitable for analog signal amplification applications that require precision and stability. It is an ideal choice for various instruments and consumer electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[LM224(SOP-14)]]></title>
	<category domain="http://www.hxymos.com/en/operational-amplifier/">OP Amp</category>
	<link><![CDATA[http://www.hxymos.com/en/operational-amplifier/lm224-sop-14-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:36:21</pubDate>
	<description><![CDATA[This four way operational amplifier adopts advanced SOP-14 packaging and has excellent electrical performance. Its input offset voltage is as low as 7mV, ensuring ultra-high accuracy and stability. The input bias current of each amplifier is only 250nA, effectively reducing power consumption and improving signal-to-noise ratio. With a pressure swing rate of 0.4V/us, it ensures fast response capability and is suitable for high-speed signal processing needs.]]></description>
</item>
<item>
	<title><![CDATA[74HC595D(SOP-16)]]></title>
	<category domain="http://www.hxymos.com/en/shift-register/">Shift register</category>
	<link><![CDATA[http://www.hxymos.com/en/shift-register/74hc595d-sop-16-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:36:12</pubDate>
	<description><![CDATA[This 8-bit shift register is packaged in a compact SOP-16 package and designed for efficient data processing. Its working voltage range is between 2V and 6V, and it can achieve flexible serial to serial or serial to parallel data conversion functions, meeting different system configuration requirements. Each device contains 8 independent data storage bits, which can effectively manage and transmit a large amount of information flow. It is an ideal choice for embedded systems and high-speed communication devices, improving the overall efficiency of the system with excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[DS18B20(TO-92)]]></title>
	<category domain="http://www.hxymos.com/en/temperature-sensor/">Sensor</category>
	<link><![CDATA[http://www.hxymos.com/en/temperature-sensor/ds18b20-to-92-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:35:44</pubDate>
	<description><![CDATA[This high-performance temperature sensor adopts the classic TO-92 packaging and is suitable for various embedded environments with limited space. As a precise temperature monitoring device, it has an excellent accuracy of ± 0.4 ℃, providing stable temperature detection services within a wide temperature range of -10 ℃ to 70 ℃, ensuring real-time and accurate capture and conversion of environmental or device temperature changes into electrical signals. It is an ideal choice for smart home appliances, environmental monitoring and other fields.]]></description>
</item>
<item>
	<title><![CDATA[74HC573(SOP-20)]]></title>
	<category domain="http://www.hxymos.com/en/latch/">Latch</category>
	<link><![CDATA[http://www.hxymos.com/en/latch/74hc573-sop-20-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:35:32</pubDate>
	<description><![CDATA[This D-type latch is packaged in SOP-20 and is suitable for various precision electronic devices. Its working voltage range is wide, and it can operate stably between 2V and 6V, ensuring high efficiency and low energy consumption. With an excellent 14ns propagation delay time, it greatly improves data processing speed and provides smoother and more accurate signal transmission control for your system. This semiconductor device is the ideal choice for your circuit design due to its excellent performance and stability.]]></description>
</item>
<item>
	<title><![CDATA[MB6S(MBS)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/mb6s-mbs-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:35:04</pubDate>
	<description><![CDATA[This high-quality rectifier bridge adopts advanced MBS packaging technology and is designed specifically for high-performance electronic devices. It has excellent electrical performance, with a rated reverse voltage of up to 600V, ensuring stable operation in high voltage environments. At a working current of 400mA, the forward voltage drop is only 1V, effectively reducing power consumption and improving system efficiency. In addition, the device provides excellent current carrying capacity, with a maximum output current of 1A, making it an ideal choice for various power conversion, inverter and other applications. By choosing this rectifier bridge, your circuit design will achieve better performance and energy utilization.]]></description>
</item>
<item>
	<title><![CDATA[MB10F(MBF)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/mb10f-mbf-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:34:55</pubDate>
	<description><![CDATA[This high-performance rectifier bridge adopts MBF packaging technology and is designed specifically for high voltage and low loss applications. As a 1000V high-voltage rectifier device, it demonstrates excellent electrical performance while ensuring stable system operation. At a working current of 500mA, the forward voltage drop is only 1.1V, effectively reducing power consumption and improving overall efficiency. This device has strong current processing capability, with a maximum continuous output current of 1A, suitable for power converters, inverters, and various high-voltage DC equipment. Choosing this rectifier bridge will greatly drive your circuit design to achieve higher energy efficiency and reliability.]]></description>
</item>
<item>
	<title><![CDATA[DB207S(DBS)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/db207s-dbs-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:34:46</pubDate>
	<description><![CDATA[This high-performance rectifier bridge adopts advanced DBS packaging technology, specifically designed for circuits with high efficiency and stability. Its rated voltage can reach VR1000V, ensuring stable operation under harsh conditions. At a working current of 1.5A, the forward voltage drop is only VF1.1V, effectively reducing power consumption and improving system energy efficiency. In addition, with a 2A output current capability (IO: 2A), it fully meets the needs of high current applications and is an ideal choice for various electronic devices such as power converters and inverters. This semiconductor device, with excellent performance and high efficiency, helps your equipment run smoother and perform better.]]></description>
</item>
<item>
	<title><![CDATA[DB107S(DBS)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/db107s-dbs-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:34:36</pubDate>
	<description><![CDATA[This DBS packaged rectifier bridge device is specifically designed for efficient and low consumption power conversion applications. Equipped with a high reverse voltage rating (VR) of 1000V, ensuring safe and stable operation under high voltage conditions. Its unique advantage is that the forward voltage drop VF under 1A current is only 1.1V, effectively reducing power consumption and improving system energy efficiency performance. In addition, the device supports a maximum continuous output current of 1A (IO), providing excellent low current processing capability and stability. Suitable for various miniaturized, high-efficiency, and medium voltage application scenarios, it is the ideal choice for your circuit design, helping to achieve a compact and high-performance power solution.]]></description>
</item>
<item>
	<title><![CDATA[ABS210(ABS)]]></title>
	<category domain="http://www.hxymos.com/en/rectifier-bridge/">Rectifier bridge</category>
	<link><![CDATA[http://www.hxymos.com/en/rectifier-bridge/abs210-abs-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:34:27</pubDate>
	<description><![CDATA[This rectifier bridge device adopts ABS packaging technology, specifically designed for circuits with high reliability and high efficiency. Its outstanding VR1000V rated voltage ensures stable operation in high voltage environments. At a current of 1A, the VF is only 1V, exhibiting ultra-low forward voltage drop characteristics, effectively saving power losses and improving overall system efficiency. In addition, it has a powerful 2A output current capability (IO: 2A), making it easy to handle high current application scenarios. This semiconductor device, with its excellent performance and energy-saving advantages, is an ideal configuration choice for electronic devices such as power converters and inverters, injecting surging power and lasting stability into the operation of your equipment.]]></description>
</item>
<item>
	<title><![CDATA[MCR100-8(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/thyristor/">Thyristor</category>
	<link><![CDATA[http://www.hxymos.com/en/thyristor/mcr100-8-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:34:18</pubDate>
	<description><![CDATA[This professional grade unidirectional thyristor adopts a small SOT-23 package, designed specifically for efficient space utilization. The device has a withstand voltage of up to 600V and operates in the A1 gear with a current range of 15-30A, demonstrating excellent performance. The low trigger gate current Igt is only 200uA, ensuring precise control and fast response in various applications. Suitable for dimming, motor control, and power switch applications, it is the ideal choice for circuit protection and power regulation.]]></description>
</item>
<item>
	<title><![CDATA[MCR100-6(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/thyristor/">Thyristor</category>
	<link><![CDATA[http://www.hxymos.com/en/thyristor/mcr100-6-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:34:08</pubDate>
	<description><![CDATA[This exquisite unidirectional thyristor adopts a space saving SOT-23 package, suitable for compact circuit design. The device has a high voltage resistance of 400V and can withstand 15-30A current in A1 gear, ensuring stability and reliability. Its gate trigger current Igt is as low as 200uA, achieving precise control and fast start. Especially suitable for applications that require efficient power switches, dimming, or motor drives, it is an indispensable power control component in your system.]]></description>
</item>
<item>
	<title><![CDATA[PC817C(SMD-4)]]></title>
	<category domain="http://www.hxymos.com/en/optocoupler-phototransistor-output/">Optocoupler</category>
	<link><![CDATA[http://www.hxymos.com/en/optocoupler-phototransistor-output/pc817c-smd-4-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:33:50</pubDate>
	<description><![CDATA[This SMD-4 packaged optocoupler adopts advanced phototransistor output technology to achieve efficient electrical isolation and signal transmission. Suitable for DC input environments, with a forward voltage as low as 1.2V, which can effectively reduce power consumption; Simultaneously providing a stable output current capacity of 50mA, ensuring efficient operation. The device has 6V high reverse voltage protection, ensuring excellent performance and stability under various working conditions, making it an ideal choice for power conversion and signal isolation.]]></description>
</item>
<item>
	<title><![CDATA[PC817B(SMD-4)]]></title>
	<category domain="http://www.hxymos.com/en/optocoupler-phototransistor-output/">Optocoupler</category>
	<link><![CDATA[http://www.hxymos.com/en/optocoupler-phototransistor-output/pc817b-smd-4-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:33:40</pubDate>
	<description><![CDATA[This SMD-4 packaged optocoupler uses a phototransistor output method, designed specifically for precise signal isolation and transmission. Suitable for DC input environments, with a forward voltage as low as 1.2V, ensuring efficient and low-power operation. The device provides a strong output current of up to 50mA and has the ability to withstand a high reverse voltage of 6V, ensuring stable and reliable operation under various complex working conditions. Widely used in power management and signal isolation fields, it is an ideal semiconductor solution for system integration.]]></description>
</item>
<item>
	<title><![CDATA[ULN2803A(SOP-18)]]></title>
	<category domain="http://www.hxymos.com/en/darlington-transistor-array/">Darlington</category>
	<link><![CDATA[http://www.hxymos.com/en/darlington-transistor-array/uln2803a-sop-18-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:31:10</pubDate>
	<description><![CDATA[This Darlington transistor array adopts a compact SOP-18 package, which includes eight independent high voltage channels. Each channel supports an output voltage of up to 50V and an input voltage of 30V, providing a powerful 500mA collector current capability. Especially suitable for driving various high current loads, such as relays, LED arrays, or motors. Excellent integrated design simplifies circuit layout, saves space, and ensures reliable switching performance, making it an ideal choice for smart homes and various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[ULN2003(SOP-16)]]></title>
	<category domain="http://www.hxymos.com/en/darlington-transistor-array/">Darlington</category>
	<link><![CDATA[http://www.hxymos.com/en/darlington-transistor-array/uln2003-sop-16-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:31:00</pubDate>
	<description><![CDATA[This high-performance seven way Darlington transistor array adopts SOP-16 packaging, designed for efficient driving of multiple loads. Each channel can carry a maximum output voltage of 50V and an input voltage of 30V, and provide a continuous collector current of 500mA, ensuring strong and stable switching performance. Suitable for driving relays, LEDs, stepper motors, and other high current demand peripherals, it is an ideal integrated driver solution in smart home devices and embedded systems, effectively simplifying circuits and enhancing reliability.]]></description>
</item>
<item>
	<title><![CDATA[LM2904(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/comparer/">Comparer</category>
	<link><![CDATA[http://www.hxymos.com/en/comparer/lm2904-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:30:42</pubDate>
	<description><![CDATA[This SOP-8 packaged high-performance comparator leads the industry with its excellent electrical performance. Its input bias current IB is as low as 150nA, significantly reducing system power consumption and error impact; The ultra-low input offset voltage Vos, which is only 5mV, ensures high-precision signal comparison in different operating states. This device is suitable for various application scenarios with strict requirements for signal detection and processing, and is an ideal semiconductor component for building accurate and efficient electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[LM2903(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/comparer/">Comparer</category>
	<link><![CDATA[http://www.hxymos.com/en/comparer/lm2903-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:30:33</pubDate>
	<description><![CDATA[This SOP-8 packaged precision comparator is designed specifically for low-power and high-precision applications. Its characteristics include an ultra-low input bias current IB of only 250nA, effectively reducing system errors; At the same time, it has excellent input offset voltage Vos, only 5mV, ensuring extremely high comparative accuracy under various working conditions. Suitable for electronic devices that require high-performance signal detection and processing, it is an ideal component for building precise control systems.]]></description>
</item>
<item>
	<title><![CDATA[MC34063(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/dc-dc-power-chip/">DC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/dc-dc-power-chip/mc34063-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:27:55</pubDate>
	<description><![CDATA[This SOP-8 packaged voltage boosting DC-DC power chip is suitable for a wide range of input voltage from 3V to 40V, flexible output of continuously adjustable voltage from 1.25V to 40V, and provides a maximum stable output current of up to 1.3A. This device is designed for efficient power conversion and can effectively cope with various complex power supply environments, ensuring stable and reliable power support for electronic devices. It is an ideal choice for battery powered systems and IoT applications.]]></description>
</item>
<item>
	<title><![CDATA[LM2596S-ADJ(TO-263-5L)]]></title>
	<category domain="http://www.hxymos.com/en/dc-dc-power-chip/">DC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/dc-dc-power-chip/lm2596s-adj-to-263-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:27:45</pubDate>
	<description><![CDATA[This highly flexible DC-DC power chip adopts TO263-5L packaging, suitable for various wide voltage input applications. As a powerful step-down power management solution, it can output a continuously adjustable output voltage of 1.23V to 37V at a maximum input voltage of 40V and provide a stable current of up to 3.5A. This chip stands out in communication systems and scenarios that require wide range voltage regulation due to its excellent dynamic load adjustment ability, efficient energy conversion rate, and multiple protection functions, effectively improving system efficiency and energy utilization.]]></description>
</item>
<item>
	<title><![CDATA[LM2596S-5.0(TO-263-5L)]]></title>
	<category domain="http://www.hxymos.com/en/dc-dc-power-chip/">DC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/dc-dc-power-chip/lm2596s-5-0-to-263-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:27:34</pubDate>
	<description><![CDATA[This high-quality DC-DC power chip is packaged in TO263-5L and designed specifically for high-performance electronic devices. As an excellent step-down power management solution, it can handle a wide input voltage range of up to 40V and stably output 5V voltage, while providing a maximum continuous current capacity of 3.5A. This chip is known for its high efficiency, low ripple, and excellent stability. It performs well in communication equipment and various high-power applications, making it an ideal choice for optimizing system energy utilization and ensuring stable power supply.]]></description>
</item>
<item>
	<title><![CDATA[LM2596S-12(TO-263-5L)]]></title>
	<category domain="http://www.hxymos.com/en/dc-dc-power-chip/">DC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/dc-dc-power-chip/lm2596s-12-to-263-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:27:24</pubDate>
	<description><![CDATA[This professional level DC-DC power chip adopts TO263-5L packaging, specially customized for high-efficiency and wide voltage input applications. As a high-performance step-down power management solution, this device can stably output 3.3V voltage at an input voltage of up to 40V and support a maximum continuous current output of 3.5A, ensuring stable and reliable power supply for high-power devices. This chip, with its excellent conversion efficiency, good temperature stability, and comprehensive protection mechanism, performs superior in communication equipment and various high current demand scenarios, making it an ideal choice for optimizing system efficiency and energy utilization.]]></description>
</item>
<item>
	<title><![CDATA[LM2576S-ADJ(TO-263-5L)]]></title>
	<category domain="http://www.hxymos.com/en/dc-dc-power-chip/">DC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/dc-dc-power-chip/lm2576s-adj-to-263-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:27:15</pubDate>
	<description><![CDATA[This high-performance DC-DC power management chip adopts a compact TO263-5L package, suitable for wide voltage input devices. Its function is efficient voltage reduction conversion, which can achieve continuously adjustable output voltage from 1.23V to 37V at a maximum input voltage of 40V, and can provide a maximum stable current of up to 3.5A. This chip demonstrates excellent performance in fields such as communication systems that have a wide demand for voltage regulation due to its excellent dynamic response, high efficiency, and comprehensive protection mechanism. It is an important choice to improve system energy utilization efficiency and power supply stability.]]></description>
</item>
<item>
	<title><![CDATA[LM2576S-5.0(TO-263-5L)]]></title>
	<category domain="http://www.hxymos.com/en/dc-dc-power-chip/">DC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/dc-dc-power-chip/lm2576s-5-0-to-263-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:27:05</pubDate>
	<description><![CDATA[This high-end DC-DC power chip is packaged in TO263-5L, specifically designed for high-power, wide voltage input devices. Its functional characteristics are step-down type, which can stably output 5V voltage under input voltage of up to 40V, and has strong current processing ability, with a maximum sustainable output of 3.5A current. This chip, with its excellent energy efficiency conversion rate, excellent load adjustment rate, and overcurrent protection mechanism, effectively reduces energy consumption while ensuring system power supply stability. It is widely used in communication facilities and other high current demand fields.]]></description>
</item>
<item>
	<title><![CDATA[LM2576S-3.3(TO-263-5L)]]></title>
	<category domain="http://www.hxymos.com/en/dc-dc-power-chip/">DC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/dc-dc-power-chip/lm2576s-3-3-to-263-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:26:56</pubDate>
	<description><![CDATA[This professional level DC-DC power chip adopts TO263-5L packaging, specially customized for high-efficiency and wide voltage input applications. As a high-performance step-down power management solution, this device can stably output 3.3V voltage at an input voltage of up to 40V and support a maximum continuous current output of 3.5A, ensuring stable and reliable power supply for high-power devices. This chip, with its excellent conversion efficiency, good temperature stability, and comprehensive protection mechanism, performs superior in communication equipment and various high current demand scenarios, making it an ideal choice for optimizing system efficiency and energy utilization.]]></description>
</item>
<item>
	<title><![CDATA[LM2575S-5.0(TO-263-5L)]]></title>
	<category domain="http://www.hxymos.com/en/dc-dc-power-chip/">DC-DC</category>
	<link><![CDATA[http://www.hxymos.com/en/dc-dc-power-chip/lm2575s-5-0-to-263-5l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 04:26:47</pubDate>
	<description><![CDATA[This high-performance DC-DC power chip is packaged in TO263-5L and designed specifically for high current and wide voltage input applications. Its functional type is step-down, which can stably reduce input voltage up to 40V to 5V and provide a maximum continuous output current of 3A, meeting the power supply needs of various high-power devices. This chip has high energy conversion rate and excellent stability, and is widely used in communication equipment and new energy fields. It is an ideal choice for optimizing system energy management and improving system efficiency.]]></description>
</item>
<item>
	<title><![CDATA[PESD12VL2BT(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/pesd12vl2bt-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:43:44</pubDate>
	<description><![CDATA[This SOT-23 packaged bidirectional ESD electrostatic protection diode is suitable for 12V systems and provides dual channel protection. Each channel can withstand up to 11A peak pulse current IPP, effectively suppressing bidirectional transient ESD impacts. The junction capacitance design of only 8pF ensures excellent signal integrity in high-speed interface applications, making it an ideal choice for high voltage and multi line ESD protection, providing comprehensive and reliable electrostatic protection performance for electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SD05C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/sd05c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:43:33</pubDate>
	<description><![CDATA[This SOD-323 packaged bidirectional ESD electrostatic protection diode is specifically designed for single channel applications. Featuring 5V high voltage VRWM characteristics, it can prevent overvoltage damage under harsh conditions. Its strength lies in its peak pulse current IPP of up to 25A, which can effectively absorb and suppress high-intensity ESD impacts. Although the junction capacitance CJ is 65pF, it can still balance the anti-interference performance of high-speed signal lines, making it an ideal ESD protection device designed for industrial grade high-speed interfaces and high reliability systems.]]></description>
</item>
<item>
	<title><![CDATA[USBLC6-2SC6(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/usblc6-2sc6-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:43:22</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is packaged in SOT-23-6L and integrates two unidirectional channels internally. Each channel operates at a VRWM of 5V and can effectively absorb up to 6A of transient pulse current IPP. Its excellent low junction capacitance characteristics (CJ only 0.8pF) ensure excellent electrostatic protection performance on high-speed data transmission interfaces while maintaining signal integrity, making it an ideal high-density system anti-static solution.]]></description>
</item>
<item>
	<title><![CDATA[ESD9B5.0ST5G(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd9b5-0st5g-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:43:11</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is packaged in a small SOD-923 package and has a single channel bidirectional protection function. The rated working voltage VRWM is 5V, which can effectively suppress transient pulse current IPP of up to 5A, and has a low junction capacitance CJ of only 12pF, ensuring excellent electrostatic discharge protection on high-speed data transmission lines, protecting the circuit from ESD impact damage, and maintaining signal integrity.]]></description>
</item>
<item>
	<title><![CDATA[PESD5V0L1BA(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/pesd5v0l1ba-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:43:00</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode adopts a compact SOD-323 package and is an efficient single channel bidirectional device. The rated VRWM is 5V, capable of withstanding transient pulse currents (IPP) up to 34A, and has a low capacitance of 180pF. It is particularly suitable for high-speed data lines sensitive to capacitance, providing excellent electrostatic discharge protection to ensure that the circuit is not damaged by ESD impacts.]]></description>
</item>
<item>
	<title><![CDATA[PESD15VL1BA(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/pesd15vl1ba-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:42:49</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode adopts SOD-323 micro packaging, providing single channel bidirectional protection. The rated working voltage VRWM is 15V, with a strong transient pulse current withstand capacity of up to 18A IPP, and a junction capacitance of 100pF. It is particularly suitable for combating high-energy ESD impacts, effectively protecting various electronic devices from electrostatic damage, ensuring signal line stability and data transmission safety.]]></description>
</item>
<item>
	<title><![CDATA[SD15C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/sd15c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:42:38</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is packaged in a small SOD-323 package, providing efficient bidirectional protection. The rated working voltage VRWM is 15V, capable of withstanding transient impulse currents (IPP) up to 8A, with a 1-channel design and a junction capacitance as low as 20pF. It is particularly suitable for electrostatic discharge protection of high-speed interfaces and capacitor sensitive circuits, ensuring that critical electronic equipment is not damaged by ESD and maintaining signal integrity.]]></description>
</item>
<item>
	<title><![CDATA[ESD5302F(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd5302f-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:42:27</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is packaged in SOT-23 and provides dual channel unidirectional protection. Each channel has a rated working voltage of 5V VRWM and can withstand up to 16A transient pulse current IPP. It also has an ultra-low junction capacitance CJ of only 0.25pF, making it particularly suitable for high-speed data interface applications, effectively preventing damage to the circuit caused by ESD electrostatic discharge, and ensuring stable and interference free signal transmission.]]></description>
</item>
<item>
	<title><![CDATA[MMBZ5V6ALT1G(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/mmbz5v6alt1g-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:42:16</pubDate>
	<description><![CDATA[The SOT-23 packaged unidirectional ESD electrostatic protection diode provides excellent anti-static protection for electronic devices. Equipped with 3V rated reverse working voltage VRWM and 3A peak pulse current IPP capability, it effectively prevents damage caused by overvoltage transient events and electrostatic discharge. The compact package is suitable for space limited design and is an ideal ESD protection solution for embedded systems and interface circuits.]]></description>
</item>
<item>
	<title><![CDATA[PESD5V0F2UT(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/pesd5v0f2ut-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:42:05</pubDate>
	<description><![CDATA[This SOT-23 package is a unidirectional ESD electrostatic protection diode designed specifically for 5V systems, providing dual channel protection. Each channel can withstand 4A peak pulse current IPP, effectively preventing damage to the circuit caused by unidirectional electrostatic discharge. A junction capacitance of only 0.5pF ensures complete and lossless signal on high-speed data lines, making it an ideal low interference, high-efficiency ESD protection solution for high-density interfaces and sensitive electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[MMBZ6V8ALT1G(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/mmbz6v8alt1g-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:41:55</pubDate>
	<description><![CDATA[This SOT-23 package features a unidirectional ESD electrostatic protection diode, specifically designed to provide excellent anti-static protection for precision interfaces. It has a rated reverse working voltage VRWM of 4.5V and a peak pulse current IPP of up to 2.5A, which can efficiently suppress overvoltage transients and electrostatic discharge effects, effectively preventing damage to sensitive electronic components. Small volume design, suitable for circuit board layouts with limited space, is an ideal protective device for I/O ports and data lines.]]></description>
</item>
<item>
	<title><![CDATA[SMF05C(SOT-363)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf05c-sot-363-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:41:44</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is packaged in SOT-363 and integrates 5 unidirectional protection channels. Each channel has a rated working voltage of 5V, can withstand transient current IPP up to 5A, and has a junction capacitance CJ of 30pF. Specially designed for high-speed multi line transmission, it effectively resists electrostatic discharge impacts, ensures signal integrity and circuit safety of electronic devices, and is an ideal multi-channel anti-static solution.]]></description>
</item>
<item>
	<title><![CDATA[ESDA6V8AV6(SOT-563)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esda6v8av6-sot-563-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:41:33</pubDate>
	<description><![CDATA[This SOT-563 package features a unidirectional ESD electrostatic protection diode with a 5-channel design and a 5V working voltage tolerance value of VRWM, effectively preventing overvoltage damage. The device can withstand transient peak current IPP of up to 1.6A on each channel and has a lower junction capacitance CJ of 9pF, ensuring excellent ESD protection performance in multiple channels while maintaining signal transmission quality. It is an ideal choice for miniaturization and high-density interface anti-static.]]></description>
</item>
<item>
	<title><![CDATA[SLVU2.8-4(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/slvu2-8-4-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:41:22</pubDate>
	<description><![CDATA[This 4-channel ESD electrostatic protection diode adopts SOP-8 packaging and is designed specifically for unidirectional voltage protection. Each channel has a rated working voltage of 2.8V (VRWM), which can effectively suppress transient pulse current IPP of up to 20A and maintain an ultra-low junction capacitance of 3pF, ensuring no interference on high-speed signal lines. Especially suitable for interface protection of electronic devices with strict requirements for compact space and high-performance anti-static.]]></description>
</item>
<item>
	<title><![CDATA[IP4220CZ6(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/ip4220cz6-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:41:11</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode adopts SOT-23-6L packaging, integrating 4 high-performance unidirectional channels and 1 additional protection unit. The rated working voltage VRWM is 5V, and each channel can withstand transient current IPP of up to 4A. It also has an ultra-low junction capacitance CJ of only 0.6pF, which is particularly suitable for precision anti-static design of high-speed signal lines, ensuring that data transmission is not affected by ESD impact and achieving comprehensive and efficient circuit protection.]]></description>
</item>
<item>
	<title><![CDATA[SP0503BAHTG(SOT-143)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/sp0503bahtg-sot-143-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:41:00</pubDate>
	<description><![CDATA[This SOT-143 package features a unidirectional ESD electrostatic protection diode with a 3-channel design and a 5V working voltage tolerance value of VRWM, effectively preventing overvoltage damage. The device can withstand transient peak current IPP of up to 10A on each channel and is equipped with a lower junction capacitance CJ of 30pF. While providing strong multi-channel ESD protection, it ensures that high-speed signal transmission is not disturbed, making it suitable for complex system interfaces with high requirements for anti-static performance.]]></description>
</item>
<item>
	<title><![CDATA[PRTR5V0U2X(SOT-143)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/prtr5v0u2x-sot-143-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:40:49</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is packaged in SOT-143 and has dual channel unidirectional protection function. The rated working voltage VRWM is 5V, and each channel can withstand transient current IPP of up to 9A. It also has an ultra-low junction capacitance CJ of only 1.5pF, ensuring excellent anti-static performance on high-speed data interfaces, effectively preventing overvoltage surges from damaging the circuit and maintaining signal integrity.]]></description>
</item>
<item>
	<title><![CDATA[TPD4E05U06DQAR(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/tpd4e05u06dqar-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:40:38</pubDate>
	<description><![CDATA[This high-performance ESD electrostatic protection diode is packaged in DFN2510-10L and contains 4 independent unidirectional channels. The rated working voltage VRWM is 3.3V, and each channel can withstand transient pulse currents with an IPP of up to 5A. The junction capacitance is as low as 0.3pF, making it particularly suitable for ESD protection needs of high-speed data interfaces. It provides excellent signal integrity protection, effectively withstands electrostatic shocks, and ensures safe and stable circuit operation.]]></description>
</item>
<item>
	<title><![CDATA[HESDUC5VU5DI-A(SOT-563)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesduc5vu5di-a-sot-563-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:40:27</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-563      Parameter Introduction:Current/A: 4, voltage/V: 5, junction capacitance Typ/pF: 0.6, number of channels: 4+1, type: Uni unidirectional,     (Ordering Information):  Product Code: H101225     Minimum packaging: 3000pcs      Gross weight/gram :0.03g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[ESD0504F(SOT-363)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd0504f-sot-363-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:40:17</pubDate>
	<description><![CDATA[This SOT-363 package features a unidirectional ESD electrostatic protection diode with a unique 4+1 channel design and a 5V working voltage tolerance value of VRWM, effectively preventing overvoltage surges. Each channel of the device can withstand transient peak current IPP of up to 4A, and is equipped with an ultra-low junction capacitance CJ of only 0.6pF. This ensures excellent multi-channel ESD protection while maximizing the integrity of high-speed signal transmission, making it an ideal anti-static solution for modern highly integrated systems.]]></description>
</item>
<item>
	<title><![CDATA[HESDUC5VU5FI-A(SOT-363)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesduc5vu5fi-a-sot-363-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:40:06</pubDate>
	<description><![CDATA[This SOT-363 package features a unidirectional ESD electrostatic protection diode with a 4+1 channel design and a 5V VRWM voltage threshold, effectively preventing overvoltage. The device can withstand transient peak current IPP of up to 4A on each channel and has an ultra-low junction capacitance CJ of 0.6pF, ensuring strong ESD protection in multi-channel applications while maintaining excellent transmission quality of high-speed signal lines. It is an ideal anti-static solution for high integration interfaces.]]></description>
</item>
<item>
	<title><![CDATA[ESD0502B(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd0502b-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:39:55</pubDate>
	<description><![CDATA[This SOT-523 package features a unidirectional ESD electrostatic protection diode with a dual channel configuration and a 5V working voltage tolerance value of VRWM, effectively preventing overvoltage damage. The device can withstand transient peak current IPP of up to 4A per channel and has an ultra-low junction capacitance CJ of only 0.5pF, providing strong ESD protection while ensuring lossless high-speed signal transmission. It is particularly suitable for modern dual channel interface applications that require strict signal integrity and anti-static performance.]]></description>
</item>
<item>
	<title><![CDATA[HESDUC5VU2CI-A(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesduc5vu2ci-a-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:39:44</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode is packaged in a sophisticated SOT-523 package, which includes two independent unidirectional channels. Each channel is designed with a maximum operating voltage of 5V (VRWM), which can effectively handle transient currents with an IPP of 4A, and has an ultra-low junction capacitance of only 0.5pF. It is particularly suitable for electrostatic protection needs of high-speed and high-density interfaces, ensuring data transmission stability and circuit protection from ESD impact damage.]]></description>
</item>
<item>
	<title><![CDATA[HESDUC5VU2LI-A(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesduc5vu2li-a-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:39:33</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23-6L      Parameter Introduction:Current/A: 6, voltage/V: 5, junction capacitance Typ/pF: 0.8, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H101232     Minimum packaging: 3000pcs      Gross weight/gram :0.042g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SRV05-4(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/srv05-4-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:39:22</pubDate>
	<description><![CDATA[This SOT-23-6L packaged unidirectional ESD electrostatic protection diode adopts an innovative 4+1 channel design and has a 5V working voltage tolerance value of VRWM, effectively preventing overvoltage damage. The device can withstand transient peak current IPP of up to 4A on each channel and has an ultra-low junction capacitance CJ of only 0.6pF, ensuring excellent ESD protection performance in multi-channel applications while maintaining the integrity of high-speed signal transmission.]]></description>
</item>
<item>
	<title><![CDATA[HESDUC5VU5LI-A(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesduc5vu5li-a-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:39:11</pubDate>
	<description><![CDATA[This SOT-23-6L packaged unidirectional ESD electrostatic protection diode adopts a 4+1 channel design and has a 5V working voltage tolerance value of VRWM, effectively preventing overvoltage surges. Each channel of the device can withstand transient peak current IPP of up to 4A, and is equipped with an ultra-low junction capacitance CJ of only 0.6pF, ensuring excellent ESD protection while maintaining the integrity of multi-channel high-speed signal transmission. It is an ideal choice for high integration anti-static solutions.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC12VB2I-A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc12vb2i-a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:39:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 11, voltage/V: 12, junction capacitance Typ/pF: 8, number of channels: 2, type: Bi bidirectional,     (Ordering Information):  Product Code: H101187     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDUC5VU2I-A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesduc5vu2i-a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:38:49</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 4, voltage/V: 5, junction capacitance Typ/pF: 0.5, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H101211     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDNC36VB2I-A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc36vb2i-a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:38:38</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 7, voltage/V: 36, junction capacitance Typ/pF: 15, number of channels: 2, type: Bi bidirectional,     (Ordering Information):  Product Code: H101212     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDNC12VB2I-B(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc12vb2i-b-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:38:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 20, voltage/V: 12, junction capacitance Typ/pF: 18, number of channels: 2, type: Bi bidirectional,     (Ordering Information):  Product Code: H101229     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[PESD5V0S2BT(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/pesd5v0s2bt-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:38:17</pubDate>
	<description><![CDATA[This ESD electrostatic protection diode adopts SOT-23 packaging and is equipped with a dual channel Bi bidirectional design, suitable for multi line protection. With a rated working voltage of 5V (VRWM), each channel can effectively absorb 11A transient pulse current and maintain a junction capacitance as low as 20pF, ensuring that the high-speed data interface can still maintain signal integrity in the event of electrostatic discharge. It is an ideal high integration, low capacitance solution that provides comprehensive ESD protection for your circuits.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC5VB2I-A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc5vb2i-a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:38:06</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 11, voltage/V: 5, junction capacitance Typ/pF: 20, number of channels: 2, type: Bi bidirectional,     (Ordering Information):  Product Code: H101227     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDNC36VU2I-A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc36vu2i-a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:37:55</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 7, voltage/V: 36, junction capacitance Typ/pF: 30, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H101217     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[PESD24VS2UT(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/pesd24vs2ut-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:37:44</pubDate>
	<description><![CDATA[This SOT-23 packaged unidirectional ESD electrostatic protection diode adopts a dual channel design and has 24V high voltage VRWM characteristics, effectively preventing overvoltage damage. The device can carry transient peak current IPP of up to 6A per channel and has a junction capacitance CJ as low as 25pF, ensuring strong anti-static protection while maintaining signal transmission quality, especially suitable for the electrostatic protection needs of high-speed dual channel interfaces.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC24VU2I-A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc24vu2i-a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:37:33</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 2, voltage/V: 24, junction capacitance Typ/pF: 25, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H101224     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDNC12VU2I-A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc12vu2i-a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:37:22</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 15, voltage/V: 12, junction capacitance Typ/pF: 80, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H101233     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDNC5VU2I-A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc5vu2i-a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:37:11</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 10, voltage/V: 5, junction capacitance Typ/pF: 60, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H101190     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDNC7/12VB2I-B(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc7-12vb2i-b-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:37:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 7-12, voltage/V: 15-18, junction capacitance Typ/pF: 27, number of channels: 2, type: Bi bidirectional,     (Ordering Information):  Product Code: H101065     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[PSM712(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/psm712-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:36:49</pubDate>
	<description><![CDATA[This static and surge protection device (TVS/ESD) has excellent overvoltage protection performance and is suitable for various electronic devices. Its peak pulse current IPP can reach 18A and 15A respectively, ensuring reliable operation even under instantaneous high current surges. The reverse working voltage VRMM provides two options, 7V and 12V, to meet different circuit design requirements. The junction capacitance CJ of the device is only 27 picofarads, which helps reduce the impact on the signal and maintain the integrity of data transmission. Adopting Bi bidirectional TYPE design, supporting dual channel protection, it can effectively prevent electrostatic discharge and transient voltage fluctuations under positive and negative polarity conditions, especially suitable for interface circuits that require high-performance protection.]]></description>
</item>
<item>
	<title><![CDATA[SM712(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/sm712-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:36:28</pubDate>
	<description><![CDATA[This static and surge protection device (TVS/ESD) provides reliable overvoltage protection for electronic devices. The peak pulse currents IPP are 18A and 15A respectively, ensuring stable operation under instantaneous high voltage conditions. The reverse working voltage VRMM has two specifications of 7V and 12V, which are suitable for various application environments. The junction capacitance CJ of the device is as low as 27 picofarads, effectively reducing the impact on signal quality, making it particularly suitable for high-speed data transmission lines. Adopting Bi bidirectional TYPE design and equipped with dual channel protection function, it can provide effective protection under both positive and negative polarity conditions, suitable for various interface circuits that require high-precision protection. This design not only enhances the stability of the system, but also simplifies the circuit design and reduces the need for external components.
]]></description>
</item>
<item>
	<title><![CDATA[HESDNC7/12VB2I-C(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc7-12vb2i-c-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:36:17</pubDate>
	<description><![CDATA[This electrostatic and surge protection device is designed for overvoltage protection of precision electronic equipment. Its IPP parameters provide two peak pulse current options of 18A and 15A, ensuring stable operation even in the face of instantaneous high-energy shocks. There are two specifications for the reverse working voltage of VRMM, 7V and 12V, to meet the needs of different application scenarios. This component has a low junction capacitance (CJ) of 27 picofarads, which helps maintain signal integrity and is particularly suitable for high-speed data lines or sensitive circuits. Adopting a dual channel (LINE: 2-channel) design and supporting bidirectional (TYPE: Bi bidirectional) protection, it can provide effective protection in both positive and negative polarity, suitable for various interface circuits that require protection against electrostatic discharge and transient overvoltage.]]></description>
</item>
<item>
	<title><![CDATA[PESD2CAN(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/pesd2can-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:36:06</pubDate>
	<description><![CDATA[This SOT-23 packaged bidirectional ESD electrostatic protection diode has a dual channel design and a working voltage tolerance value of up to 24V VRWM, effectively preventing overvoltage damage. Each channel of the device can withstand a transient peak current IPP of 4A, and is equipped with a junction capacitor CJ as low as 10pF, ensuring excellent ESD protection performance while maximizing the integrity of high-speed signal transmission. It is suitable for various situations that require high-performance anti-static measures.]]></description>
</item>
<item>
	<title><![CDATA[PESD1CAN(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/pesd1can-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:35:55</pubDate>
	<description><![CDATA[The SOT-23 package in sales is a bidirectional ESD electrostatic protection diode designed specifically for dual channel applications, with 24V high voltage VRWM performance, which can effectively suppress overvoltage. The device provides a peak pulse current IPP of up to 4A per channel and has a junction capacitance CJ as low as 10pF, ensuring efficient protection against ESD while maintaining signal transmission speed and quality. It is an ideal anti-static solution for high-speed data interfaces and precision electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[NUP2105LT1G(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/nup2105lt1g-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:35:44</pubDate>
	<description><![CDATA[This SOT-23 packaged bidirectional ESD electrostatic protection diode is suitable for dual channel protection and has a VRWM withstand voltage value of up to 24V, effectively preventing overvoltage surges. The device can withstand transient peak current IPP of up to 4A per channel and has a junction capacitance CJ as low as 10pF, ensuring strong ESD protection while maintaining high-speed signal transmission quality. It is an ideal dual channel interface anti-static solution.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC24VB2I-A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc24vb2i-a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:35:33</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOT-23      Parameter Introduction:Current/A: 4, voltage/V: 24, junction capacitance Typ/pF: 10, number of channels: 2, type: Bi bidirectional,     (Ordering Information):  Product Code: H101188     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDLC5VB1GF-A(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdlc5vb1gf-a-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:35:22</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN0603-2L      Parameter Introduction:Current/A: 2, voltage/V: 5, junction capacitance Typ/pF: 3, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101208     Minimum packaging: 15000pcs      Gross weight/gram :0.008g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDNC3V3B1GF-A(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc3v3b1gf-a-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:35:11</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN0603-2L      Parameter Introduction:Current/A: 5, voltage/V: 3.3, junction capacitance Typ/pF: 12, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101192     Minimum packaging: 15000pcs      Gross weight/gram :0.008g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[ESD11LL5.0C(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd11ll5-0c-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:35:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN0603-2L      Parameter Introduction:IPP:4.5A,VRWM:5V,CJ:0.25pF,LINE:1,TYPE:Bi     (Ordering Information):  Product Code: H101205     Minimum packaging: 15000pcs      Gross weight/gram :0.008g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDUC5VB1GF-A(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesduc5vb1gf-a-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:34:49</pubDate>
	<description><![CDATA[This electrostatic and surge protection device is designed based on TVS/ESD technology and provides a peak pulse current IPP carrying capacity of 4.5A, ensuring the safety of the circuit under instantaneous current surges. Its reverse working voltage VRMM is set to 5V, suitable for electronic circuits that require stable voltage protection. This component has a low junction capacitance CJ of 0.25 picofarads (pF), which has minimal impact on signal transmission and ensures the signal integrity of high-speed data lines. As a single channel Bi bidirectional product, it can effectively protect the bidirectional signal path from overvoltage events. Suitable for various consumer electronic products, ensuring that internal circuits are not damaged by electrostatic discharge or transient voltage fluctuations.]]></description>
</item>
<item>
	<title><![CDATA[ESD11D5.0C(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd11d5-0c-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:34:38</pubDate>
	<description><![CDATA[This DFN0603-2L packaged bidirectional ESD electrostatic protection diode is designed specifically for single channel applications. It has a high voltage resistance VRWM characteristic of 5V, which can effectively prevent overvoltage damage. The device provides a peak pulse current IPP capability of up to 8A and has a junction capacitance CJ as low as 15pF, ensuring efficient suppression of ESD while maintaining excellent transmission quality of high-speed signal lines. It is an ideal anti-static protection component for miniaturization and high-performance interfaces.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC5VB1GF-A(DFN0603-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc5vb1gf-a-dfn0603-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:34:28</pubDate>
	<description><![CDATA[This DFN0603-2L packaged bidirectional ESD electrostatic protection diode is designed specifically for single channel applications and has a 5V working voltage tolerance value of VRWM, effectively preventing overvoltage damage. The device can withstand transient peak current IPP of up to 8A and has a lower junction capacitance CJ of only 15pF. It ensures excellent ESD protection while maintaining good transmission quality of high-speed signal lines, making it an ideal anti-static solution for modern small-sized and high-performance interfaces.]]></description>
</item>
<item>
	<title><![CDATA[ESD5304D(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd5304d-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:34:17</pubDate>
	<description><![CDATA[This DFN2510-10L packaged unidirectional ESD electrostatic protection diode is designed for 4 channels and features 5V high voltage VRWM protection, effectively preventing overvoltage. The device can withstand transient peak current IPP of up to 5A on each channel and is equipped with an ultra-low junction capacitance CJ of only 0.3pF, ensuring excellent ESD protection while maintaining the integrity of high-speed signal transmission. It is an ideal choice for multi-channel high-speed interface anti-static.]]></description>
</item>
<item>
	<title><![CDATA[RCLAMP0524P(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/rclamp0524p-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:34:06</pubDate>
	<description><![CDATA[This DFN2510-10L packaged unidirectional ESD electrostatic protection diode adopts a 4-channel configuration and has a 5V working voltage tolerance value of VRWM, effectively preventing overvoltage surges. Each channel provides up to 4A transient peak current IPP protection, and has industry-leading ultra-low junction capacitance CJ of only 0.3pF, ensuring high-speed and lossless signal transmission while providing strong ESD protection. It is an ideal anti-static solution for multi-channel high-speed interfaces.]]></description>
</item>
<item>
	<title><![CDATA[ESD0524P(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd0524p-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:33:55</pubDate>
	<description><![CDATA[This DFN2510-10L packaged unidirectional ESD electrostatic protection diode adopts a 4-channel design and has a 5V working voltage tolerance value of VRWM, which can effectively prevent overvoltage damage. The device can withstand transient peak current IPP of up to 4A per channel and has an ultra-low junction capacitance CJ of only 0.3pF, ensuring excellent integrity of high-speed signal transmission while providing strong ESD protection. It is particularly suitable for anti-static solutions with multi-channel high-speed interfaces.]]></description>
</item>
<item>
	<title><![CDATA[HESDUC5VU4EF-A(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesduc5vu4ef-a-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:33:44</pubDate>
	<description><![CDATA[This DFN2510-10L packaged unidirectional ESD electrostatic protection diode is suitable for 4-channel protection and has a 5V high stable VRWM voltage threshold, effectively preventing overvoltage. The device provides a transient peak current IPP of up to 4A per channel and has an industry-leading ultra-low junction capacitance CJ of only 0.3pF, ensuring excellent signal integrity while efficiently suppressing ESD. It is an ideal anti-static solution for multi-channel high-speed interfaces.]]></description>
</item>
<item>
	<title><![CDATA[ESD3324P(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd3324p-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:33:33</pubDate>
	<description><![CDATA[This DFN2510-10L packaged unidirectional ESD electrostatic protection diode is designed for 4 channels and has a 3.3V working voltage tolerance value of VRWM, effectively preventing overvoltage damage. Each channel of the device can withstand a transient peak current IPP of 4A, and is equipped with an ultra-low junction capacitor CJ of only 0.5pF, ensuring excellent ESD protection while maintaining excellent quality of high-speed signal transmission. It is an ideal anti-static solution for modern multi-channel high-speed interfaces.]]></description>
</item>
<item>
	<title><![CDATA[HESDUC3V3U4EF-A(DFN2510-10L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesduc3v3u4ef-a-dfn2510-10l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:33:22</pubDate>
	<description><![CDATA[This DFN2510-10L packaged unidirectional ESD electrostatic protection diode is suitable for 4-channel protection and has a 3.3V high-precision VRWM withstand voltage, effectively avoiding overvoltage damage. Each channel of the device can withstand transient peak current IPP of up to 4A, and has an ultra-low junction capacitance CJ of 0.5pF, ensuring excellent ESD protection while maintaining excellent quality of high-speed signal transmission. It is an ideal anti-static solution for multi-channel high-speed interfaces.]]></description>
</item>
<item>
	<title><![CDATA[ESD9B3.3ST5G(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd9b3-3st5g-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:33:11</pubDate>
	<description><![CDATA[This SOD-923 packaged bidirectional ESD electrostatic protection diode is designed specifically for single channel high-speed interfaces. With a high-precision VRWM withstand voltage value of 3.3V, it can effectively prevent overvoltage damage. The device provides up to 9A transient peak current IPP protection and has a junction capacitance CJ as low as 15pF, ensuring signal integrity under harsh conditions, making it an ideal ESD protection choice for high-speed data transmission lines.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC3V3B1BL-A(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc3v3b1bl-a-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:33:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-923      Parameter Introduction:Current/A: 9, voltage/V: 3.3, junction capacitance Typ/pF: 15, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101173     Minimum packaging: 8000pcs      Gross weight/gram :0.006g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDNC5VB1BL-A(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc5vb1bl-a-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:32:49</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-923      Parameter Introduction:Current/A: 8, voltage/V: 5, junction capacitance Typ/pF: 15, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101144     Minimum packaging: 8000pcs      Gross weight/gram :0.006g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDUC5VB1BL-A(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesduc5vb1bl-a-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:32:39</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-923      Parameter Introduction:Current/A: 3, voltage/V: 5, junction capacitance Typ/pF: 0.8, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101134     Minimum packaging: 8000pcs      Gross weight/gram :0.006g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDUC5VU1BL-A(SOD-923)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesduc5vu1bl-a-sod-923-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:32:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-923      Parameter Introduction:Current/A: 4, voltage/V: 5, junction capacitance Typ/pF: 0.5, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H101167     Minimum packaging: 8000pcs      Gross weight/gram :0.006g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDNC5VB1CL-C(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc5vb1cl-c-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:32:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-523      Parameter Introduction:Current/A: 30, voltage/V: 5, junction capacitance Typ/pF: 60, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101252     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[ESD5Z36(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd5z36-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:32:06</pubDate>
	<description><![CDATA[This SOD-523 packaged unidirectional ESD electrostatic protection diode is suitable for 1-channel protection and has 36V high voltage VRWM characteristics, effectively blocking overvoltage surges. The device can withstand transient peak current IPP of up to 7A and has an ultra-low junction capacitance CJ of 30pF, ensuring excellent electrostatic discharge protection while minimizing the impact on high-speed signal lines. It is an ideal anti-static solution for high-performance electronic device interfaces.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC36VU1CL-A(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc36vu1cl-a-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:31:55</pubDate>
	<description><![CDATA[This SOD-523 packaged unidirectional ESD electrostatic protection diode is designed specifically for single channel use and has a VRWM withstand voltage value of up to 36V, effectively preventing the impact of overvoltage on the circuit. The device can withstand a peak pulse current IPP of 7A under transient conditions and maintain a junction capacitance CJ as low as 30pF, ensuring strong ESD protection while maintaining high-speed signal transmission quality, especially suitable for sensitive electronic interface protection in high voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[ESD5Z24(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd5z24-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:31:44</pubDate>
	<description><![CDATA[This SOD-523 package is a unidirectional ESD electrostatic protection diode designed for 1-channel applications. Equipped with 24V high voltage VRWM, ensuring stable protection of the circuit from damage in high-voltage environments. The device has strong transient response capability, can withstand 6A peak pulse current IPP, and maintain a junction capacitance CJ as low as 25pF, effectively preventing electrostatic discharge shocks while maintaining high-speed signal transmission quality. It is an ideal anti-static solution for various high-speed interfaces and sensitive electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC24VU1CL-A(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc24vu1cl-a-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:31:33</pubDate>
	<description><![CDATA[This SOD-523 packaged unidirectional ESD electrostatic protection diode provides excellent 1-channel protection for high-speed I/O interfaces. With a reverse working voltage tolerance value of up to 24V, VRWM ensures stable operation under high voltage conditions. The device can withstand transient peak current IPP of 6A and maintain a junction capacitance CJ as low as 25pF, effectively preventing electrostatic discharge damage while ensuring high-speed and complete signal transmission.]]></description>
</item>
<item>
	<title><![CDATA[ESD5Z12(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd5z12-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:31:22</pubDate>
	<description><![CDATA[This SOD-523 package is a unidirectional ESD electrostatic protection diode designed specifically for a 1-channel high-speed interface. Equipped with 12V high voltage VRWM characteristics, effectively preventing overvoltage surges. The device can withstand transient peak current IPP of 8A and maintain a low junction capacitance CJ of 34pF, ensuring strong ESD protection performance while maximizing signal transmission quality and stability. It is suitable for various application scenarios with high requirements for electrostatic protection.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC12VU1CL-A(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc12vu1cl-a-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:31:11</pubDate>
	<description><![CDATA[This SOD-523 packaged unidirectional ESD electrostatic protection diode is suitable for single channel protection and has a 12V high voltage VRWM, which can effectively block overvoltage. The peak pulse current IPP is as high as 8A, ensuring strong protection against transient shocks. Its 34pF low junction capacitance performance ensures signal integrity for high-speed data transmission, making it an ideal choice for preventing electrostatic discharge damage, especially suitable for high-speed interface circuit protection.]]></description>
</item>
<item>
	<title><![CDATA[ESD5Z7.0(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd5z7-0-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:31:00</pubDate>
	<description><![CDATA[The SOD-523 package in sales is a unidirectional ESD electrostatic protection diode designed specifically for 1-channel applications, with a 7V high stable VRWM withstand voltage value, which can effectively prevent overvoltage damage. The device can withstand IPP peak pulses with transient currents up to 9A, while maintaining a low 40pF junction capacitance CJ, ensuring strong ESD protection performance while maintaining excellent transmission quality of high-speed signal lines. It is an ideal anti-static solution for various sensitive electronic device interfaces.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC7VU1CL-A(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc7vu1cl-a-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:30:50</pubDate>
	<description><![CDATA[This SOD-523 package is a unidirectional ESD electrostatic protection diode designed specifically for a 1-channel high-speed interface. It has a high voltage resistance VRWM characteristic of 7V, which can effectively prevent overvoltage damage. The device can withstand transient peak current IPP of up to 9A and maintain a low junction capacitance CJ of 40pF, providing strong ESD protection while ensuring signal transmission quality. It is an ideal anti-static solution for various sensitive electronic devices and high-speed data lines.]]></description>
</item>
<item>
	<title><![CDATA[ESD5Z5.0(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd5z5-0-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:30:39</pubDate>
	<description><![CDATA[The item on sale is an efficient unidirectional ESD electrostatic protection diode, packaged in a compact SOD-523 package, designed to provide excellent protection for a single signal line. This device has a 5V high voltage VRWM design, ensuring a safe operating range; The transient pulse current IPP is as high as 9.4A, which can effectively absorb and suppress ESD shocks. Although the junction capacitance CJ is 80pF, it still maintains a low signal attenuation, making it particularly suitable for high-speed data interfaces and situations with strict requirements for electrostatic protection.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC5VU1CL-A(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc5vu1cl-a-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:30:28</pubDate>
	<description><![CDATA[This SOD-523 packaged unidirectional ESD electrostatic protection diode provides excellent protection for 1-channel applications. With a stable VRWM voltage threshold of 5V, it can effectively prevent overvoltage damage. The device can withstand peak pulse current IPP of up to 9.4A and maintain a junction capacitance CJ of 80pF when encountering transient events, ensuring strong suppression of ESD while maintaining good signal integrity of high-speed data lines. It is an ideal anti-static solution for high-performance interfaces.]]></description>
</item>
<item>
	<title><![CDATA[PESD5V0S1BB(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/pesd5v0s1bb-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:30:17</pubDate>
	<description><![CDATA[This SOD-523 packaged bidirectional ESD electrostatic protection diode is designed specifically for single channel applications. It has a 5V high stable VRWM withstand voltage value and can effectively defend against overvoltage shocks. The device provides excellent transient protection capability, with a peak pulse current IPP of up to 11A and a junction capacitance CJ of only 20pF, ensuring the maximum integrity of high-speed signal transmission while strongly suppressing ESD. It is an ideal anti-static solution for various high-speed interfaces and sensitive electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC5VB1CL-B(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc5vb1cl-b-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:30:06</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-523      Parameter Introduction:Current/A: 11, voltage/V: 5, junction capacitance Typ/pF: 20, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101174     Minimum packaging: 3000pcs      Gross weight/gram :0.017g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[ESD5LM5.0C(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd5lm5-0c-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:29:55</pubDate>
	<description><![CDATA[This SOD-523 packaged bidirectional ESD electrostatic protection diode provides excellent protection for single channel applications. VRWM with a working voltage tolerance of 5V can effectively prevent overvoltage damage. The device can withstand peak pulse current IPP of up to 2.5A under transient conditions and has an ultra-low junction capacitance CJ of only 2.5pF, ensuring strong ESD protection while minimizing the impact on high-speed signal integrity. It is an ideal anti-static solution for high demand interfaces.]]></description>
</item>
<item>
	<title><![CDATA[HESDLC5VB1CL-A(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdlc5vb1cl-a-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:29:44</pubDate>
	<description><![CDATA[The ESD electrostatic protection diode being sold is packaged in SOD-523, with a 1-channel bidirectional design. Equipped with a reverse working voltage tolerance value of 5V VRWM, it can effectively prevent overvoltage damage. Its peak pulse current IPP reaches 2.5A, and the junction capacitance is as low as 2.5pF, ensuring excellent ESD protection while minimizing the impact on high-speed signal quality. It is particularly suitable for precision electronic interfaces with strict requirements for electrostatic protection and signal speed.]]></description>
</item>
<item>
	<title><![CDATA[ESD5L5.0C(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd5l5-0c-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:29:33</pubDate>
	<description><![CDATA[This SOD-523 packaged bidirectional ESD electrostatic protection diode is designed to provide single channel protection for 5V systems. Equipped with 3A peak pulse current IPP capability, effectively combating bidirectional transient ESD events. Its junction capacitance is as low as 0.6pF, making it particularly suitable for high-speed data transmission interfaces, achieving excellent signal integrity while providing high-level electrostatic discharge protection performance.]]></description>
</item>
<item>
	<title><![CDATA[HESDUC5VB1CL-A(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesduc5vb1cl-a-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:29:22</pubDate>
	<description><![CDATA[This SOD-523 packaged bidirectional ESD electrostatic protection diode is designed specifically for single channel applications. Its 5V VRWM ensures stable protection under normal operating conditions, and the 3A peak pulse current IPP provides efficient transient voltage suppression capability. Especially outstanding is that the device has an ultra-low junction capacitance CJ of only 0.6pF, making it particularly suitable for high-speed data lines. It can provide excellent ESD protection while minimizing the impact on signal quality.]]></description>
</item>
<item>
	<title><![CDATA[LESD5Z5.0CT1G(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/lesd5z5-0ct1g-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:29:11</pubDate>
	<description><![CDATA[This SOD-523 packaged ESD electrostatic protection diode adopts a bidirectional design, specifically designed for 1-channel protection. Equipped with a rated reverse working voltage of 5V VRWM and excellent transient withstand capacity, the peak pulse current can reach 9A. The ultra-low junction capacitance is only 15pF, ensuring that high-speed signal transmission is not disturbed, making it an ideal ESD protection solution for highly integrated electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[ESD5B5.0S(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd5b5-0s-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:29:01</pubDate>
	<description><![CDATA[The SOD-523 package on sale is a bidirectional ESD electrostatic protection diode, particularly suitable for single channel circuit protection. Equipped with a reverse working voltage tolerance value of 5V VRWM, it can effectively defend against overvoltage risks. The device provides a peak pulse current IPP capability of up to 9A and has a junction capacitance CJ as low as 15pF, ensuring excellent ESD protection while minimizing the impact on high-speed signal transmission quality. It is an ideal electrostatic protection choice for various high-speed interfaces.]]></description>
</item>
<item>
	<title><![CDATA[ESD5Z5.0C(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd5z5-0c-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:28:50</pubDate>
	<description><![CDATA[This small SOD-523 packaged bidirectional ESD electrostatic protection diode is suitable for single line protection, with a rated reverse working voltage of 5V and strong 9A peak pulse current capability. With its 15pF low junction capacitance performance, it ensures the integrity of high-speed signal transmission while providing efficient ESD protection. It is an ideal anti-static solution for precision interfaces and I/O ports.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC5VB1CL-A(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc5vb1cl-a-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:28:39</pubDate>
	<description><![CDATA[This SOD-523 packaged bidirectional ESD electrostatic protection diode is suitable for 5V systems and provides single channel efficient protection. Equipped with 9A peak pulse current IPP capability, effectively suppressing bidirectional transient ESD impact, ensuring circuit safety and stability. Its 15pF junction capacitor design provides excellent electrostatic protection performance for modern electronic devices while ensuring that high-speed signal lines are not disturbed.]]></description>
</item>
<item>
	<title><![CDATA[ESD5Z3.3(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd5z3-3-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:28:28</pubDate>
	<description><![CDATA[The product on sale is a high-performance unidirectional ESD electrostatic protection diode, designed for 1-channel applications in a compact SOD-523 package. With a high stable VRWM voltage of 3.3V, it can effectively prevent overvoltage damage. The device can withstand IPP peak pulse currents of up to 11.2A in transient events. Although the junction capacitance CJ is 105pF, it still ensures strong ESD protection while maintaining good signal integrity of the data line, making it suitable for high-speed I/O port electrostatic protection needs.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC3V3U1CL-A(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc3v3u1cl-a-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:28:17</pubDate>
	<description><![CDATA[This SOD-523 packaged unidirectional ESD electrostatic protection diode is designed specifically for high-speed I/O ports and provides 3.3V rated reverse working voltage protection. Equipped with excellent transient response capability, the peak pulse current can reach 11.2A, effectively resisting ESD impacts. Although the junction capacitance is 105pF, it still maintains good signal integrity, especially suitable for modern high-speed data interface applications that require high-performance single channel ESD protection.]]></description>
</item>
<item>
	<title><![CDATA[ESD5Z3.3C(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd5z3-3c-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:28:06</pubDate>
	<description><![CDATA[This compact SOD-523 packaged bidirectional ESD electrostatic protection diode is designed specifically for 1-channel applications. With a reverse working voltage of as low as 3.3V, VRWM can provide excellent protection without affecting normal signal transmission. Its peak pulse current IPP of up to 9A and ultra-low junction capacitance CJ of only 15pF ensure excellent signal quality of high-speed data lines while efficiently resisting ESD impacts.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC3V3B1CL-A(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc3v3b1cl-a-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:27:55</pubDate>
	<description><![CDATA[This SOD-523 packaged bidirectional ESD electrostatic protection diode is designed to provide single channel protection for 3.3V systems. Featuring a 9A peak pulse current IPP performance, it effectively resists bidirectional transient ESD impacts and ensures circuit safety and stability. The 15pF low junction capacitance design ensures excellent signal integrity during high-speed signal transmission, making it an ideal ESD protection choice for modern portable and highly integrated electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SD24C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/sd24c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:27:44</pubDate>
	<description><![CDATA[The SOD-323 package in sales is a bidirectional ESD electrostatic protection diode, designed to provide efficient protection for single channel applications. Equipped with a VRWM withstand voltage of up to 24V, capable of withstanding transient peak current of 9.5A, effectively resisting ESD impacts. Its junction capacitance is as low as 30pF, ensuring signal integrity even under harsh conditions, making it an ideal electrostatic protection solution for high-speed data interfaces and precision electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC24VB1EL-A(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc24vb1el-a-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:27:33</pubDate>
	<description><![CDATA[The SOD-323 packaged single channel bidirectional ESD electrostatic protection diode is designed for efficient protection. It has a reverse working voltage tolerance value of up to 24V for VRWM and a strong ability to withstand 9.5A transient pulse current. Its 30pF low junction capacitance ensures excellent ESD protection while maintaining low interference transmission of high-speed signal lines, making it suitable for interface protection of various sensitive electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC5VB1EL-B(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc5vb1el-b-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:27:23</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 25, voltage/V: 5, junction capacitance Typ/pF: 65, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101128     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDUC5VB1EL-A(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesduc5vb1el-a-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:27:12</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 18, voltage/V: 5, junction capacitance Typ/pF: 0.6, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101150     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDLC3V3B1EL-A(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdlc3v3b1el-a-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:27:01</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 20, voltage/V: 3.3, junction capacitance Typ/pF: 1, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101145     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDLC5VB1EL-A(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdlc5vb1el-a-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:26:50</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 10, voltage/V: 5, junction capacitance Typ/pF: 0.6, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101107     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDLC5VB1EL-B(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdlc5vb1el-b-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:26:39</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 2.5, voltage/V: 5, junction capacitance Typ/pF: 2.5, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101108     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDNC36VB1EL-A(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc36vb1el-a-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:26:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 7, voltage/V: 36, junction capacitance Typ/pF: 15, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101119     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDNC12VB1EL-A(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc12vb1el-a-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:26:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 15, voltage/V: 12, junction capacitance Typ/pF: 20, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101079     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDNC36VU1EL-B(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc36vu1el-b-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:26:06</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 36, junction capacitance Typ/pF: 30, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H101115     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDNC24VU1EL-B(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc24vu1el-b-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:25:55</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 25, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H101130     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDNC24VU1EL-A(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc24vu1el-a-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:25:45</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 6, voltage/V: 24, junction capacitance Typ/pF: 25, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H101124     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDNC12VU1EL-A(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc12vu1el-a-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:25:34</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 15, voltage/V: 12, junction capacitance Typ/pF: 80, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H101109     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDNC5VU1EL-A(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc5vu1el-a-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:25:23</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 9, voltage/V: 5, junction capacitance Typ/pF: 60, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H101131     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDNC12VB1EL-B(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc12vb1el-b-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:25:12</pubDate>
	<description><![CDATA[This SOD-323 packaged bidirectional ESD electrostatic protection diode provides single channel efficient protection for 12V systems. Equipped with 9A peak pulse current IPP capability, effectively suppressing bidirectional transient ESD impact, ensuring circuit safety and stability. The junction capacitance is as low as 8pF, suitable for high-speed data interfaces, with excellent signal integrity and strong ESD protection effectiveness, making it an ideal choice for high demand electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[PESD3V3L1BA(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/pesd3v3l1ba-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:25:01</pubDate>
	<description><![CDATA[This SOD-323 packaged bidirectional ESD electrostatic protection diode is designed specifically for 3.3V systems, providing powerful single channel protection. Equipped with 38A peak pulse current IPP capability, effectively resisting bidirectional transient ESD impact, ensuring that the circuit is not damaged. Although the junction capacitance is 50pF, it can still maintain good signal integrity in high-speed data transmission, making it an ideal ESD protection solution for high current applications.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC3V3B1EL-A(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc3v3b1el-a-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:24:50</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-323      Parameter Introduction:Current/A: 38, voltage/V: 3.3, junction capacitance Typ/pF: 50, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101106     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[PESD5V0S1BA(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/pesd5v0s1ba-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:24:39</pubDate>
	<description><![CDATA[This SOD-323 packaged bidirectional ESD electrostatic protection diode is designed to provide single channel efficient protection for 5V systems. It has the ability to withstand 11A peak pulse current IPP, effectively suppressing bidirectional transient ESD impact, and ensuring circuit safety and stability. The 20pF low junction capacitance design helps maintain signal integrity on high-speed data lines and is an ideal ESD protection component for highly integrated electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[ESD3Z5.0C(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd3z5-0c-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:24:28</pubDate>
	<description><![CDATA[This SOD-323 packaged bidirectional ESD electrostatic protection diode is designed to provide single channel efficient protection for 5V systems. Equipped with 11A peak pulse current IPP capability, effectively suppressing bidirectional transient ESD impact and ensuring stable circuit operation. Its junction capacitance is as low as 20pF, maintaining signal integrity in high-speed data transmission, making it an ideal compact and high-performance ESD protection solution for modern highly integrated electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC5VB1EL-A(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc5vb1el-a-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:24:17</pubDate>
	<description><![CDATA[This SOD-323 packaged bidirectional ESD electrostatic protection diode is designed to provide single channel efficient protection for 5V systems. Equipped with 11A peak pulse current IPP capability, effectively suppressing bidirectional transient ESD impact and ensuring stable circuit operation. Its junction capacitance is as low as 20pF, maintaining signal integrity in high-speed data transmission, making it an ideal compact and high-performance ESD protection solution for modern highly integrated electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HESDUC5VU2AF3-A(DFN1006-3L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesduc5vu2af3-a-dfn1006-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:24:07</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN1006-3L      Parameter Introduction:Current/A: 3, voltage/V: 5, junction capacitance Typ/pF: 0.45, number of channels: 2, type: Uni unidirectional,     (Ordering Information):  Product Code: H101090     Minimum packaging: 10000pcs      Gross weight/gram :0.009g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDLC5VB1AF-B(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdlc5vb1af-b-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:23:56</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN1006-2L      Parameter Introduction:Current/A: 5, voltage/V: 5, junction capacitance Typ/pF: 15, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101097     Minimum packaging: 10000pcs      Gross weight/gram :0.008g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDNC12VU1AF-A(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc12vu1af-a-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:23:45</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN1006-2L      Parameter Introduction:Current/A: 50, voltage/V: 12, junction capacitance Typ/pF: 100, number of channels: 1, type: Uni unidirectional,     (Ordering Information):  Product Code: H101080     Minimum packaging: 10000pcs      Gross weight/gram :0.008g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HESDNC15VB1AF-A(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc15vb1af-a-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:23:34</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN1006-2L      Parameter Introduction:Current/A: 6.5, voltage/V: 15, junction capacitance Typ/pF: 20, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101099     Minimum packaging: 10000pcs      Gross weight/gram :0.008g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[ESD8D24C(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd8d24c-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:23:23</pubDate>
	<description><![CDATA[This DFN1006-2L packaged bidirectional ESD electrostatic protection diode is designed specifically for 24V systems, providing single channel efficient protection. Equipped with 5A peak pulse current IPP capability, effectively resisting bidirectional transient ESD events, ensuring that equipment is not damaged by static electricity in high voltage environments. The 15pF junction capacitor is suitable for high-speed interface applications, with excellent signal integrity and excellent electrostatic discharge protection performance.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC24VB1AF-A(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc24vb1af-a-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:23:12</pubDate>
	<description><![CDATA[This DFN1006-2L packaged bidirectional ESD electrostatic protection diode is suitable for 24V systems and provides single channel efficient protection. Equipped with 5A peak pulse current IPP capability, effectively resisting bidirectional transient ESD impacts. Its junction capacitance is 15pF, which maintains signal integrity in high-speed data transmission, making it an ideal ESD protection solution for electronic device interfaces in high voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[ESD8D12C(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd8d12c-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:23:01</pubDate>
	<description><![CDATA[This DFN1006-2L packaged bidirectional ESD electrostatic protection diode is designed specifically for 12V systems, providing single channel efficient protection. Equipped with 8A peak pulse current IPP capability, effectively combating bidirectional transient ESD events. Its junction capacitance as low as 6.5pF ensures excellent signal integrity in high-speed signal transmission, making it an ideal compact and high-performance ESD solution for various high demand interfaces and electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC12VB1AF-A(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc12vb1af-a-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:22:50</pubDate>
	<description><![CDATA[This DFN1006-2L packaged bidirectional ESD electrostatic protection diode is suitable for 12V systems and provides single channel efficient protection. Equipped with 8A peak pulse current IPP capability, it can effectively withstand bidirectional transient ESD impact, ensuring circuit safety and stability. Its junction capacitance is as low as 6.5pF, making it particularly suitable for high-speed data transmission interfaces, with excellent signal integrity and excellent electrostatic discharge protection performance.]]></description>
</item>
<item>
	<title><![CDATA[ESD8D7.0C(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd8d7-0c-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:22:39</pubDate>
	<description><![CDATA[This DFN1006-2L packaged bidirectional ESD electrostatic protection diode is designed to provide single channel strong protection for 7V systems. Equipped with 9A peak pulse current IPP capability, effectively resisting bidirectional transient ESD impact and maintaining stable circuit operation. Its 8pF low junction capacitance design ensures uninterrupted high-speed signal transmission, making it an ideal efficient and compact ESD protection solution for modern electronic device interfaces.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC7VB1AF-A(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc7vb1af-a-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:22:29</pubDate>
	<description><![CDATA[This DFN1006-2L packaged bidirectional ESD electrostatic protection diode is designed specifically for 7V systems, providing excellent single channel protection. It has a 9A peak pulse current IPP capability, effectively responding to bidirectional transient ESD impacts, ensuring safe and stable operation of the circuit. The 8pF low junction capacitance ensures signal integrity during high-speed data transmission, making it an ideal ESD protection solution for modern electronic devices and high demand interfaces.]]></description>
</item>
<item>
	<title><![CDATA[ESD8LM5.0C(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd8lm5-0c-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:22:18</pubDate>
	<description><![CDATA[The DFN1006-2L packaged bidirectional ESD electrostatic protection diode is designed specifically for 5V systems, providing single channel efficient protection. Having a 2.5A peak pulse current IPP capability, it can effectively suppress bidirectional transient ESD events and ensure that the circuit is not damaged. The ultra-low junction capacitance is only 2.5pF, especially suitable for high-speed data interface applications, with excellent signal integrity and excellent electrostatic protection performance.]]></description>
</item>
<item>
	<title><![CDATA[HESDLC5VB1AF-A(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdlc5vb1af-a-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:22:07</pubDate>
	<description><![CDATA[This DFN1006-2L packaged bidirectional ESD electrostatic protection diode is suitable for 5V systems and provides single channel protection. Equipped with 2.5A peak pulse current IPP capability, effectively resisting bidirectional transient ESD impacts. Its junction capacitance as low as 2.5pF ensures excellent signal integrity during high-speed signal transmission, making it an ideal choice for miniaturized electronic devices and high demand interfaces, providing powerful electrostatic protection functions.]]></description>
</item>
<item>
	<title><![CDATA[ESD8L5.0C(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd8l5-0c-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:21:56</pubDate>
	<description><![CDATA[This DFN1006-2L packaged bidirectional ESD electrostatic protection diode is designed specifically for 5V systems, providing single channel efficient protection. Equipped with 3A peak pulse current IPP performance, effectively suppressing bidirectional transient ESD voltage and ensuring circuit safety. The junction capacitance is as low as 0.6pF, ensuring optimal signal integrity for high-speed data interfaces in the face of electrostatic discharge. It is an ideal ESD protection solution for high integration and high-speed transmission electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HESDUC5VB1AF-B(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesduc5vb1af-b-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:21:45</pubDate>
	<description><![CDATA[This DFN1006-2L packaged bidirectional ESD electrostatic protection diode is designed to provide single channel protection for 5V systems. Equipped with 3A peak pulse current IPP capability, it can effectively suppress bidirectional transient ESD impact and ensure circuit safety. The ultra-low junction capacitance 0.6pF design is particularly suitable for high-speed data transmission interfaces, combining excellent signal integrity and high-level electrostatic protection efficiency, making it an ideal choice for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[ESD8D5.0C-V2(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd8d5-0c-v2-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:21:34</pubDate>
	<description><![CDATA[This DFN1006-2L packaged bidirectional ESD electrostatic protection diode is suitable for 5V systems and provides single channel protection. With a 5.5A peak pulse current IPP capability, it effectively resists bidirectional transient ESD impacts and ensures circuit safety. The junction capacitance is as low as 10pF, ensuring signal integrity during high-speed data transmission. It is an ideal choice for modern electronic device interfaces, providing excellent electrostatic protection performance for high integration applications.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC5VB1AF-B(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc5vb1af-b-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:21:23</pubDate>
	<description><![CDATA[This DFN1006-2L packaged bidirectional ESD electrostatic protection diode is suitable for 5V systems and provides single channel efficient protection. Equipped with a 5.5A peak pulse current IPP capability, effectively resisting bidirectional transient ESD impacts and ensuring the safety of sensitive electronic devices. Only 10pF junction capacitor design ensures excellent signal integrity of high-speed signal lines even when subjected to electrostatic discharge, making it an ideal anti ESD solution for modern integrated electronic products.]]></description>
</item>
<item>
	<title><![CDATA[ESD8LL5.0C(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd8ll5-0c-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:21:12</pubDate>
	<description><![CDATA[This DFN1006-2L packaged bidirectional ESD electrostatic protection diode is designed to provide efficient single channel protection for 5V systems. Equipped with 4A peak pulse current IPP capability, it can effectively absorb and clamp bidirectional transient ESD voltage, ensuring that the circuit is not damaged. Its ultra-low junction capacitance of 0.35pF design is particularly suitable for high-speed data interfaces, ensuring signal integrity while providing excellent electrostatic protection performance.]]></description>
</item>
<item>
	<title><![CDATA[HESDUC5VB1AF-A(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesduc5vb1af-a-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:21:01</pubDate>
	<description><![CDATA[The DFN1006-2L packaged bidirectional ESD electrostatic protection diode is suitable for 5V systems and provides single channel efficient anti-static protection. The device can withstand 4A peak pulse current IPP, effectively suppressing bidirectional transient ESD events and ensuring circuit safety. Its ultra-low junction capacitance design of 0.35pF is particularly suitable for high-speed data interface applications, ensuring signal integrity while achieving excellent ESD protection performance.]]></description>
</item>
<item>
	<title><![CDATA[LESD8D7.0CAT5G(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/lesd8d7-0cat5g-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:20:50</pubDate>
	<description><![CDATA[The DFN1006-2L packaged bidirectional ESD electrostatic protection diode provides single channel strong protection for 7V systems. Capable of withstanding 9A peak pulse current IPP, effectively suppressing bidirectional transient ESD and ensuring circuit stability. The junction capacitance is only 8pF, which is particularly suitable for high-speed interface applications, with excellent signal integrity and excellent ESD protection performance.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC7VB1AF-B(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc7vb1af-b-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:20:40</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: DFN1006-2L      Parameter Introduction:Current/A: 20, voltage/V: 7, junction capacitance Typ/pF: 18, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101030     Minimum packaging: 10000pcs      Gross weight/gram :0.008g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[PESDNC2FD5VB(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/pesdnc2fd5vb-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:20:29</pubDate>
	<description><![CDATA[This DFN1006-2L packaged bidirectional ESD electrostatic protection diode is designed specifically for 5V systems and has powerful single channel protection function. It can effectively suppress bidirectional transient ESD currents of up to 9A, ensuring that electronic devices are not damaged by static electricity. The 15pF low junction capacitance ensures excellent signal integrity in high-speed signal transmission, making it an ideal ESD protection solution for various high integration and high-speed interface applications.]]></description>
</item>
<item>
	<title><![CDATA[ESD5451N(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd5451n-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:20:18</pubDate>
	<description><![CDATA[The DFN1006-2L packaged bidirectional ESD electrostatic protection diode is suitable for 5V systems and provides single channel efficient protection. It has a 5.5A peak pulse current IPP capability, which can effectively suppress bidirectional transient ESD impacts and ensure stable circuit operation. Its junction capacitance is 10pF, suitable for high-speed data interface applications, with good signal integrity and excellent electrostatic protection performance, making it an ideal anti-static solution for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[ESD8D5.0C(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd8d5-0c-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:20:07</pubDate>
	<description><![CDATA[This DFN1006-2L packaged bidirectional ESD electrostatic protection diode is suitable for 5V systems and provides single channel protection. Having a 9A peak pulse current IPP capability, it can effectively withstand bidirectional transient ESD impacts and maintain circuit stability. The junction capacitance is as low as 15pF, ensuring complete and non-destructive signal transmission in high-speed data transmission applications. It is an ideal compact and high-performance ESD protection solution for modern portable and highly integrated electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC5VB1AF-A(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc5vb1af-a-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:19:56</pubDate>
	<description><![CDATA[This DFN1006-2L packaged bidirectional ESD electrostatic protection diode is designed specifically for 5V systems, providing single channel efficient protection. Equipped with 9A peak pulse current IPP capability, it can effectively absorb and suppress bidirectional transient ESD events, protecting the circuit from damage. The junction capacitance is as low as 15pF, ensuring excellent signal integrity in high-speed data interface applications, and is an ideal solution for modern electronic devices to prevent electrostatic interference.]]></description>
</item>
<item>
	<title><![CDATA[ESD8D3.3C(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/esd8d3-3c-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:19:45</pubDate>
	<description><![CDATA[The DFN1006-2L packaged bidirectional ESD electrostatic protection diode is designed specifically for 3.3V systems, providing single channel efficient protection. The device can withstand a 9A peak pulse current IPP under transient conditions, effectively preventing the impact of bidirectional electrostatic discharge on the circuit. Its junction capacitance is as low as 15pF, ensuring excellent signal integrity in high-speed data interface applications, making it an ideal ESD protection choice for modern portable and highly integrated electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[LESD8D3.3CAT5G(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/lesd8d3-3cat5g-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:19:34</pubDate>
	<description><![CDATA[The DFN1006-2L packaged bidirectional ESD electrostatic protection diode is designed specifically for 3.3V systems and has a powerful single channel protection function. It can effectively cope with 9A peak transient current, bi-directional suppress ESD impact, and ensure circuit safety. Its junction capacitance is as low as 15pF, especially suitable for high-speed data transmission needs, providing excellent signal integrity and efficient ESD protection performance, making it an ideal choice for compact electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HESDNC3V3B1AF-A(DFN1006-2L)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/hesdnc3v3b1af-a-dfn1006-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 03:19:23</pubDate>
	<description><![CDATA[This DFN1006-2L packaged bidirectional ESD electrostatic protection diode is suitable for 3.3V systems and provides single channel efficient protection. Equipped with 9A peak pulse current IPP capability, it can effectively absorb and suppress bidirectional transient ESD events, protecting the circuit from damage. Only a 15pF junction capacitor ensures good signal integrity on high-speed data lines, making it an ideal low capacitance ESD solution for modern portable and highly integrated electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HT7533-40(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7533-40-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:31:51</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HT7550-40(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7550-40-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:31:41</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HT7550-40(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7550-40-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:31:31</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HT7530-40(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7530-40-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:31:21</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HT7533-40(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7533-40-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:31:11</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HT7133-40(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7133-40-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:31:01</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HT7133-40(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7133-40-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:30:51</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HT7333-1(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7333-1-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:30:41</pubDate>
	<description><![CDATA[This SOT-89 package LDO linear regulator is designed specifically for efficient power conversion. Provide a stable 3.3V output voltage and a maximum 0.25A current, suitable for a wide input voltage range (up to 18V). With its excellent load regulation ability and low ripple performance, ensure that your circuit receives stable and pure low-voltage power supply.]]></description>
</item>
<item>
	<title><![CDATA[HT7333-A(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7333-a-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:30:31</pubDate>
	<description><![CDATA[This SOT-89 packaged LDO linear regulator provides precise 3.3V output voltage and maximum 0.25A current capability, suitable for application scenarios with input voltages up to 18V. With excellent load adjustment rate and low noise characteristics, we provide efficient and stable low-voltage power support for your circuit.]]></description>
</item>
<item>
	<title><![CDATA[HT7550(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7550-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:30:22</pubDate>
	<description><![CDATA[This LDO linear regulator adopts SOT-23 packaging, providing precise 5V output voltage and maximum 0.1A current, suitable for a wide input voltage range of 30V. With its excellent load adjustment rate and low ripple performance, it achieves efficient and stable power conversion in a compact package, making it an ideal low-voltage power supply solution for various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HT7533(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7533-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:29:51</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HT7533(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7533-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:29:41</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HT7530(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7530-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:29:31</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HT7533S(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7533s-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:29:21</pubDate>
	<description><![CDATA[This small SOT-23 packaged LDO linear regulator is designed specifically for low-power applications. Provide stable 3.3V output voltage and maximum 0.1A current capability, with a wide input voltage range supporting up to 30V. With its excellent power stability and low noise performance, it provides high-quality and reliable low-voltage power supply for your circuits in a compact space.]]></description>
</item>
<item>
	<title><![CDATA[HT7530S(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7530s-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:29:11</pubDate>
	<description><![CDATA[This SOT-23 packaged LDO linear regulator is designed specifically for compact designs and low-power applications. Provides stable 3V output voltage and maximum 0.1A current capability, and is compatible with a wide input voltage range (up to 30V). Its excellent stability and low noise performance ensure efficient and accurate low-voltage power supply solutions for your circuits.]]></description>
</item>
<item>
	<title><![CDATA[HT7550S(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7550s-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:29:01</pubDate>
	<description><![CDATA[This SOT-23 packaged LDO linear regulator is designed for precision voltage conversion, providing stable 5V output and maximum 0.1A current capacity. Compatible with a wide input voltage range of up to 30V, ensuring efficient and reliable low-voltage power solutions for your circuits with excellent load regulation performance and low noise characteristics.]]></description>
</item>
<item>
	<title><![CDATA[HT7550S(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7550s-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:28:51</pubDate>
	<description><![CDATA[This LDO linear regulator is packaged in SOT-89 and designed specifically for stable power supply. The output voltage is constant at 5V, the maximum current is 100mA, and it supports efficient conversion within a wide input voltage range of 30V. With excellent linear regulation performance and low noise characteristics, ensure that your device receives a pure and stable power supply.]]></description>
</item>
<item>
	<title><![CDATA[HT7533-1(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7533-1-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:28:41</pubDate>
	<description><![CDATA[This compact LDO linear regulator is packaged in SOT-89 and designed specifically for low-power applications. Provide a stable 3.3V output voltage and a maximum 0.1A current, suitable for a wide input voltage range (up to 30V). With its excellent stability and low noise performance, it provides efficient and accurate low-voltage power supply for your circuits in small spaces.]]></description>
</item>
<item>
	<title><![CDATA[HT7550-1(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7550-1-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:28:31</pubDate>
	<description><![CDATA[This SOT-89 package LDO linear regulator is suitable for a wide voltage input range (up to 30V), providing a stable 5V output voltage and a maximum 0.1A current. With excellent load regulation performance and low noise characteristics, ensure efficient and reliable low-voltage power supply for your circuits.]]></description>
</item>
<item>
	<title><![CDATA[HT7150(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7150-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:28:21</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HT7150S(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7150s-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:28:11</pubDate>
	<description><![CDATA[This small LDO linear regulator is packaged in SOT-23, making it particularly suitable for low-power applications. Provide a stable 5V output voltage and a maximum current of 0.05A, suitable for a wide range of input voltage (up to 30V). With excellent stability and low noise performance, we provide efficient and reliable low-voltage power support for your micro power circuits in a compact space.]]></description>
</item>
<item>
	<title><![CDATA[HT7133S(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7133s-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:28:01</pubDate>
	<description><![CDATA[This SOT-23 packaged LDO linear regulator has a precise 3.3V fixed output voltage and a rated current of 0.05A. Its unique design can withstand input voltages up to 30V, providing a stable and efficient power solution for low-power devices. Suitable for various embedded system applications with strict requirements for space and energy consumption.]]></description>
</item>
<item>
	<title><![CDATA[HT7133-1(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7133-1-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:27:51</pubDate>
	<description><![CDATA[This SOT-89 packaged LDO linear regulator has a precise 3.3V fixed output voltage and 0.05A current capability. Its maximum input voltage can reach 30V, making it particularly suitable for low-power and high voltage applications, providing excellent power stability and making it an ideal choice for embedded systems and portable devices.]]></description>
</item>
<item>
	<title><![CDATA[HT7130-1(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7130-1-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:27:41</pubDate>
	<description><![CDATA[This small LDO linear regulator is packaged in SOT-89 and designed specifically for low-power applications. Provide a stable 3V output voltage and a maximum current of 0.05A, suitable for a wide range of input voltages up to 30V. With its excellent power stability and low noise performance, we provide efficient and accurate low-voltage power solutions for your micro power circuits.]]></description>
</item>
<item>
	<title><![CDATA[HT7133(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7133-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:27:31</pubDate>
	<description><![CDATA[This SOT-23 packaged LDO linear regulator has a fixed output voltage of 3.3V and a current capacity of 0.05A, and can operate stably at a maximum input voltage of 30V. Specially designed for low-power applications, with excellent power stability, it is an ideal power management solution for high voltage, miniaturized electronic devices, and embedded systems.]]></description>
</item>
<item>
	<title><![CDATA[HT7130(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7130-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:27:21</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[HT7150(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7150-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:27:11</pubDate>
	<description><![CDATA[This LDO linear regulator adopts SOT-89 packaging, providing a stable 5V output voltage and a maximum 0.05A current, suitable for a wide voltage range of input voltage up to 30V. With its excellent linear regulation performance and low noise characteristics, it ensures a long-lasting and pure 5V power supply for your electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HT7133(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ht7133-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:27:01</pubDate>
	<description><![CDATA[This SOT-89 packaged LDO linear regulator has precise 3.3V output voltage and 0.05A current capability, and can operate stably at a maximum input voltage of 30V. Specially designed for low-power, high voltage applications, with compact size and superior performance, suitable for various embedded systems and electronic devices with strict requirements for power stability.]]></description>
</item>
<item>
	<title><![CDATA[AMS1117-ADJ(SOT-223)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ams1117-adj-sot-223-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:26:51</pubDate>
	<description><![CDATA[This SOT-223 packaged LDO linear regulator can adjust the output voltage in the range of 1.5 to 5V, providing a stable current output of up to 1A. It has excellent performance and can withstand a maximum input voltage of 18V, suitable for various precision circuits that require high power supply stability, ensuring efficient and stable power management.]]></description>
</item>
<item>
	<title><![CDATA[AMS1117-5.0(SOT-223)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ams1117-5-0-sot-223-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:26:41</pubDate>
	<description><![CDATA[This high-performance LDO linear regulator packaged in SOT-223 has a stable 5V output voltage and 1A continuous current capability, which can maintain efficient and stable operation at a maximum input voltage of 18V. Suitable for various high current demand scenarios, providing precise and reliable power conversion and voltage stabilization functions for electronic devices, ensuring worry free system operation.]]></description>
</item>
<item>
	<title><![CDATA[AMS1117-2.5(SOT-223)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ams1117-2-5-sot-223-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:26:21</pubDate>
	<description><![CDATA[This SOT-223 packaged LDO linear regulator is designed for efficient voltage regulation. Its output voltage is stable at 2.5V, and the maximum current can reach 1A. It supports input voltage up to 18V, with excellent performance and is suitable for various precision circuits, ensuring stable and reliable system power supply.]]></description>
</item>
<item>
	<title><![CDATA[AMS1117-1.8(SOT-223)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ams1117-1-8-sot-223-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:26:11</pubDate>
	<description><![CDATA[This high-performance LDO linear regulator packaged in SOT-223 is designed specifically for high current applications. It provides a precise and stable output voltage of 1.8V, and can withstand continuous output currents of up to 1A, supporting a maximum input voltage of 18V. Suitable for various electronic devices and systems with strict requirements for power stability, ensuring efficient and reliable voltage conversion.]]></description>
</item>
<item>
	<title><![CDATA[AMS1117-5.0(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ams1117-5-0-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:25:51</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[AMS1117-3.3(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ams1117-3-3-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:25:41</pubDate>
	<description><![CDATA[This SOT-89 packaged LDO linear regulator provides a stable 3.3V output voltage and up to 1A current capability. Its maximum input voltage is 18V, with excellent power management performance, suitable for various high demand electronic devices, effectively ensuring system power supply stability, and compact size suitable for compact circuit design.]]></description>
</item>
<item>
	<title><![CDATA[AMS1117-2.5(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ams1117-2-5-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:25:31</pubDate>
	<description><![CDATA[This SOT-89 packaged high-efficiency LDO linear regulator provides a stable output voltage of 2.5V and a continuous current of up to 1A, with a maximum input voltage of 18V. Compact design, stable performance, suitable for applications with high power stability requirements in various electronic devices, achieving efficient and accurate voltage conversion control.]]></description>
</item>
<item>
	<title><![CDATA[AMS1117-1.8(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/ams1117-1-8-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:25:21</pubDate>
	<description><![CDATA[This high-performance LDO linear regulator packaged in SOT-89 has a stable output voltage of 1.8V and a continuous output current capability of up to 1A. Suitable for application environments with input voltages up to 18V, ensuring efficient and reliable power conversion and stable power supply over a wide voltage range, especially suitable for electronic devices with high current demands and stable power supply requirements.]]></description>
</item>
<item>
	<title><![CDATA[78L09(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/78l09-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:25:11</pubDate>
	<description><![CDATA[This SOT-89 packaged LDO linear regulator is designed to provide a stable 9V output voltage and has a maximum current carrying capacity of 0.1A. Suitable for a wide input voltage range (up to 30V), providing efficient and reliable medium voltage power solutions for your circuits with excellent load regulation performance and low noise characteristics.]]></description>
</item>
<item>
	<title><![CDATA[78L12(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/78l12-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:25:01</pubDate>
	<description><![CDATA[This SOT-89 packaged LDO linear regulator is designed specifically for efficient power conversion. Provide stable 12V output voltage and maximum 0.1A current, suitable for a wide input voltage range (up to 30V). With excellent load regulation performance and low noise characteristics, ensure that your circuit receives a stable and reliable high-voltage power supply.]]></description>
</item>
<item>
	<title><![CDATA[TL431(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/tl431-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:24:31</pubDate>
	<description><![CDATA[This LDO linear regulator is packaged in a small SOT-23 package and has a precise output voltage control (Vout) of 0.5%, providing a stable 0.1A current output (Iout). The maximum input voltage is 18V (Vin (Max)), ensuring efficient and stable operation, suitable for power management needs of various precision electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[TL432(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/tl432-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:24:21</pubDate>
	<description><![CDATA[This high-precision LDO linear regulator adopts a compact SOT-23 package, with a strict gear control of 0.1% for the output voltage Vout, providing a stable 0.1A current output (Iout). Equipped with a maximum input voltage of 18V (Vin (Max)), ensuring efficient and stable operation over a wide voltage range, it is an ideal choice for high-end electronic device power management.]]></description>
</item>
<item>
	<title><![CDATA[XC6206P332PR(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/xc6206p332pr-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:24:11</pubDate>
	<description><![CDATA[This SOT-89 packaged LDO linear regulator has a stable output voltage of 3.3V and a continuous output current capability of up to 0.5A. Designed for a maximum input voltage range of 7V, particularly optimized for applications with low to medium current requirements, providing efficient and accurate power conversion and stable power supply guarantee for various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[XC6206P332MR(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/xc6206p332mr-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:24:01</pubDate>
	<description><![CDATA[This SOT-23 packaged LDO linear regulator has a stable output voltage of 3.3V and a current carrying capacity of 0.3A, and performs excellently at a maximum input voltage of 8V. Designed to be compact and efficient, specifically designed for low-power electronic devices, ensuring precise and reliable power conversion and voltage regulation, it is an ideal solution for various embedded systems and miniaturized applications.]]></description>
</item>
<item>
	<title><![CDATA[HXY6206I-3.3(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hxy6206i-3-3-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:23:51</pubDate>
	<description><![CDATA[This SOT-23 packaged LDO linear regulator provides precise 3.3V output voltage and a maximum output current of 0.3A, enabling efficient and stable operation at a maximum input voltage of 8V. Compact design and excellent performance, especially suitable for low-power and limited space electronic devices, achieving reliable power conversion and management, making it an ideal choice for embedded systems and miniaturized applications.]]></description>
</item>
<item>
	<title><![CDATA[XC6206P302MR(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/xc6206p302mr-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:23:41</pubDate>
	<description><![CDATA[This LDO linear regulator, packaged in SOT-23, has a precise and stable 3V output voltage and a maximum output current of 0.3A, enabling efficient operation at input voltages up to 8V. Compact design and superior performance, especially suitable for small electronic devices and embedded systems that require high power stability, achieving excellent voltage conversion and management effects.]]></description>
</item>
<item>
	<title><![CDATA[HXY6206I-3.0(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hxy6206i-3-0-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:23:31</pubDate>
	<description><![CDATA[This SOT-23 packaged LDO linear regulator is designed for efficient power management. Has a stable 3V output voltage and a maximum current carrying capacity of 0.3A, ensuring excellent performance at the highest input voltage of 8V. Its compact size is suitable for limited space application environments, providing precise and reliable power conversion support for various low-power electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[XC6206P282MR(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/xc6206p282mr-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:23:21</pubDate>
	<description><![CDATA[This SOT-23 packaged LDO linear regulator has a precisely adjustable 2.8V output voltage and a maximum output current capacity of 0.3A, which can maintain efficient and stable operation at a maximum input voltage of 8V. The design is compact and superior in performance, especially suitable for low-power and limited space electronic devices, providing stable and reliable power conversion management for the system.]]></description>
</item>
<item>
	<title><![CDATA[HXY6206I-2.8(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hxy6206i-2-8-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:23:11</pubDate>
	<description><![CDATA[This SOT-23 packaged LDO linear regulator has a stable output voltage of 2.8V and a current carrying capacity of 0.3A. Its maximum input voltage is 8V, designed specifically for low-power, compact design applications, providing excellent power stability and conversion efficiency, making it an ideal power management solution for various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[XC6206P252MR(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/xc6206p252mr-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:23:01</pubDate>
	<description><![CDATA[This SOT-23 packaged LDO linear regulator has a precise and stable output voltage of 2.5V, and a maximum continuous output current of 0.3A. Suitable for application environments with input voltages up to 8V, providing excellent power conversion efficiency and stability. The compact design makes it the preferred power management solution for low-power and limited space electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY6206I-2.5(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/linear-regulator-ldo/">LDO</category>
	<link><![CDATA[http://www.hxymos.com/en/linear-regulator-ldo/hxy6206i-2-5-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-03 02:22:51</pubDate>
	<description><![CDATA[This SOT-23 packaged LDO linear regulator has a precise and stable 2.5V output voltage and a maximum current carrying capacity of 0.3A. Excellent performance at a maximum input voltage of 8V, specially designed for low-power and compact design requirements, providing efficient power conversion and stable performance, making it an ideal choice for small electronic devices and embedded systems.]]></description>
</item>
<item>
	<title><![CDATA[HXYG125N12P(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxyg125n12p-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 05:48:35</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-220C      Parameter Introduction:Current/A: 125, Voltage/V: 120, Internal Resistance Typ/mR: 6, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104322     Minimum packaging: 50pcs      Gross weight/gram :2.699g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXYG70N10P(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxyg70n10p-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 05:48:24</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-220C      Parameter Introduction:Current/A: 70, Voltage/V: 100, Internal Resistance Typ/mR: 8.5, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104315     Minimum packaging: 50pcs      Gross weight/gram :2.699g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXYG80P10MP(TO-247)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxyg80p10mp-to-247-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 05:48:02</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-247      Parameter Introduction:Current/A: 80, Voltage/V: 100, Internal Resistance Typ/mR: 22, VGS: 20, Type: P,     (Ordering Information):  Product Code: H104349     Minimum packaging: 30pcs      Gross weight/gram :8.103g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXYG80P06T(TO-263)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxyg80p06t-to-263-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 05:47:51</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-263      Parameter Introduction:Current/A: 80, voltage/V: 60, internal resistance Typ/mR: 9, VGS: 20, type: P,     (Ordering Information):  Product Code: H104560     Minimum packaging: 800pcs      Gross weight/gram :1.719g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXYG120N15P(TO-220C)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxyg120n15p-to-220c-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 05:47:40</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-220C      Parameter Introduction:Current/A: 120, Voltage/V: 150, Internal Resistance Typ/mR: 9.5, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104318     Minimum packaging: 50pcs      Gross weight/gram :2.699g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXYG300N04L(TOLL)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxyg300n04l-toll-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 05:47:29</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TOLL      Parameter Introduction:Current/A: 300, voltage/V: 40, internal resistance Typ/mR: 1, VGS: 20, type: N,     (Ordering Information):  Product Code: H104565     Minimum packaging: 2000pcs      Gross weight/gram :0.945g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXYG320N08L(TOLL)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxyg320n08l-toll-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 05:47:18</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TOLL      Parameter Introduction:Current/A: 320, Voltage/V: 80, Internal Resistance Typ/mR: 1.6, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104568     Minimum packaging: 2000pcs      Gross weight/gram :0.945g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXYG350N10L(TOLL)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxyg350n10l-toll-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 05:47:08</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TOLL      Parameter Introduction:Current/A: 350, Voltage/V: 100, Internal Resistance Typ/mR: 1.4, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104572     Minimum packaging: 2000pcs      Gross weight/gram :0.945g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXYG260N10T(TO-263)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxyg260n10t-to-263-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 05:46:57</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-263      Parameter Introduction:Current/A: 260, Voltage/V: 100, Internal Resistance Typ/mR: 2.4, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104557     Minimum packaging: 800pcs      Gross weight/gram :1.719g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXYG60N10D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxyg60n10d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 05:46:46</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 60, Voltage/V: 100, Internal Resistance Typ/mR: 13.5, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104372     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXYG15H06S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxyg15h06s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 05:46:35</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOP-8      Parameter Introduction:Current/A: 15, Voltage/V: 60, Internal Resistance Typ/mR: 12, VGS: 20, Type: N+N,     (Ordering Information):  Product Code: H103995     Minimum packaging: 3000pcs      Gross weight/gram :0.13g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXYG100N08NF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxyg100n08nf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 05:46:13</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN5X6-8L      Parameter Introduction:Current/A: 100, voltage/V: 85, internal resistance Typ/mR: 4.3, VGS: 20, type: N,     (Ordering Information):  Product Code: H103880     Minimum packaging: 5000pcs      Gross weight/gram :0.137g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXYG75N10NF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxyg75n10nf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 05:46:02</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN5X6-8L      Parameter Introduction:Current/A: 75, Voltage/V: 100, Internal Resistance Typ/mR: 7.3, VGS: 20, Type: N,     (Ordering Information):  Product Code: H103849     Minimum packaging: 5000pcs      Gross weight/gram :0.137g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXYG42H04NF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxyg42h04nf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 05:45:51</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN5X6-8L      Parameter Introduction:Current/A: 42, voltage/V: 40, internal resistance Typ/mR: 6.9, VGS: 20, type: N+N,     (Ordering Information):  Product Code: H103904     Minimum packaging: 5000pcs      Gross weight/gram :0.137g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXYG40H04NF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxyg40h04nf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 05:45:40</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN5X6-8L      Parameter Introduction:Current/A: 40, voltage/V: 40, internal resistance Typ/mR: 6.9, VGS: 20, type: N+N,     (Ordering Information):  Product Code: H103917     Minimum packaging: 5000pcs      Gross weight/gram :0.137g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXYG50H06NF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxyg50h06nf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 05:45:29</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN5X6-8L      Parameter Introduction:Current/A: 50, voltage/V: 60, internal resistance Typ/mR: 11, VGS: 20, type: N+N,     (Ordering Information):  Product Code: H103897     Minimum packaging: 5000pcs      Gross weight/gram :0.137g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXYG40H04DF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxyg40h04df-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 05:45:18</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN3X3-8L      Parameter Introduction:Current/A: 40, voltage/V: 40, internal resistance Typ/mR: 7.2, VGS: 20, type: N+N,     (Ordering Information):  Product Code: H103826     Minimum packaging: 5000pcs      Gross weight/gram :0.064g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXYG40H03DF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxyg40h03df-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 05:45:07</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN3X3-8L      Parameter Introduction:Current/A: 40, voltage/V: 30, internal resistance Typ/mR: 5, VGS: 20, type: N+N,     (Ordering Information):  Product Code: H103791     Minimum packaging: 5000pcs      Gross weight/gram :0.064g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXYG60N04DF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxyg60n04df-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 05:44:57</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN3X3-8L      Parameter Introduction:Current/A: 60, Voltage/V: 40, Internal Resistance Typ/mR: 6.9, VGS: 20, Type: N,     (Ordering Information):  Product Code: H103792     Minimum packaging: 5000pcs      Gross weight/gram :0.064g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXYG62N03DF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxyg62n03df-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 05:44:46</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: DFN3X3-8L      Parameter Introduction:Current/A: 62, Voltage/V: 30, Internal Resistance Typ/mR: 5, VGS: 20, Type: N,     (Ordering Information):  Product Code: H103773     Minimum packaging: 5000pcs      Gross weight/gram :0.064g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[ZMM2V4(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zmm2v4-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:31:16</pubDate>
	<description><![CDATA[This LL-34 packaged voltage regulator diode provides precise 2.4V stable voltage output (VZ), with a low reverse current IR of 50uA and excellent performance under 5mA IZT conditions. The maximum dissipation power reaches 0.5W, ensuring efficient and stable voltage regulation in various electronic devices. Especially suitable for miniaturization and low-voltage power supply system requirements, it is an ideal choice for high-precision voltage stabilization solutions.]]></description>
</item>
<item>
	<title><![CDATA[ZMM11(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zmm11-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:31:05</pubDate>
	<description><![CDATA[This LL-34 packaged voltage regulator diode has a precise 11V stable voltage (VZ) and is equipped with an ultra-low reverse leakage current IR of only 0.1uA, performing excellently under 5mA IZT conditions. The maximum dissipation power reaches 0.5W, ensuring efficient and stable voltage control in various applications. Specially designed for circuits that require high-precision voltage regulation and good thermal performance, it is an ideal choice for power management and system protection.]]></description>
</item>
<item>
	<title><![CDATA[ZMM13(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zmm13-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:30:54</pubDate>
	<description><![CDATA[This LL-34 packaged voltage regulator diode has a precise 13V stable voltage output (VZ) and an ultra-low reverse leakage current IR of only 0.1uA, demonstrating excellent performance under 5mA IZT conditions. The maximum dissipation power reaches 0.5W, ensuring efficient and stable voltage control in various application scenarios, especially suitable for miniaturized circuit designs that require high-precision voltage regulation and good thermal efficiency.]]></description>
</item>
<item>
	<title><![CDATA[ZMM24(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zmm24-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:30:43</pubDate>
	<description><![CDATA[This LL-34 packaged voltage regulator diode provides precise voltage stabilization capability (VZ) up to 24V, and is equipped with an ultra-low reverse leakage current of 0.1uA (IR), ensuring that the device can maintain excellent performance and energy efficiency even at high voltages. The 5mA transient IZT current endows it with excellent response speed, adapting to rapidly changing circuit environments. The maximum power dissipation is 0.5W, suitable for high voltage precision voltage regulation and circuit protection applications, meeting strict requirements with powerful performance.]]></description>
</item>
<item>
	<title><![CDATA[ZMM2V0(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zmm2v0-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:30:32</pubDate>
	<description><![CDATA[This LL-34 packaged voltage regulator diode is designed for precise voltage regulation of 2V, with a reverse current (IR) of 100uA and stable performance under 5mA IZT conditions. The maximum dissipation power reaches 0.5W, ensuring efficient and long-lasting stable operation in various applications. Suitable for miniaturization and low voltage circuit requirements, it is an ideal voltage stabilization solution for high integration power management.]]></description>
</item>
<item>
	<title><![CDATA[ZMM27(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zmm27-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:29:59</pubDate>
	<description><![CDATA[This LL-34 packaged voltage regulator diode provides precise 27V stable voltage (VZ) and has an ultra-low reverse leakage current IR of only 0.1uA, demonstrating excellent performance under 5mA IZT conditions. The maximum dissipation power reaches 0.5W, ensuring efficient and stable voltage regulation in various high-voltage applications. Especially suitable for circuit designs that require high voltage accuracy and thermal stability, it is an ideal choice for high-voltage power management.]]></description>
</item>
<item>
	<title><![CDATA[ZMM20V(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zmm20v-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:29:48</pubDate>
	<description><![CDATA[This LL-34 packaged voltage regulator diode is designed specifically for precise voltage regulation of 20V, with an ultra-low reverse current of 0.1uA (IR), ensuring excellent energy-saving and stability performance even at high voltages. The 5mA transient IZT current endows it with excellent response speed and load adaptability. The maximum power dissipation is 0.5W, suitable for various high-precision voltage regulation and circuit protection applications, meeting the requirements of harsh environments with powerful performance.]]></description>
</item>
<item>
	<title><![CDATA[ZMM18V(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zmm18v-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:29:37</pubDate>
	<description><![CDATA[This LL-34 packaged voltage regulator diode provides precise 18V stable voltage (VZ) and has an ultra-low reverse leakage current IR of only 0.1uA, demonstrating excellent performance under 5mA IZT conditions. The maximum dissipation power reaches 0.5W, ensuring efficient and stable voltage regulation in various high-voltage applications. Suitable for miniaturized circuit design that requires high voltage accuracy and thermal stability, it is an ideal solution for high voltage stabilization requirements.]]></description>
</item>
<item>
	<title><![CDATA[ZMM15V(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zmm15v-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:29:16</pubDate>
	<description><![CDATA[This LL-34 packaged voltage regulator diode is specially designed for precise voltage regulation of 15V, with an ultra-low reverse current of 0.1uA (IR), ensuring excellent energy efficiency and stability even at high voltages. The 5mA transient IZT current endows the device with fast response capability and adapts to various circuit changes. The maximum power dissipation is 0.5W, suitable for various high-precision voltage regulation and circuit protection applications, meeting strict requirements with excellent performance and stability.]]></description>
</item>
<item>
	<title><![CDATA[ZMM12V(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zmm12v-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:29:05</pubDate>
	<description><![CDATA[This LL-34 packaged voltage regulator diode is designed specifically for precision voltage regulation (VZ) of 12V voltage. Its excellent reverse current (IR) performance as low as 0.1uA ensures efficient and stable operation of the equipment. The 5mA transient IZT current endows the device with excellent response speed and stability. The maximum power dissipation is 0.5W, suitable for various high-precision voltage regulation and circuit protection application scenarios, meeting your diverse needs with powerful functionality and stability.]]></description>
</item>
<item>
	<title><![CDATA[ZMM9V1(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zmm9v1-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:28:43</pubDate>
	<description><![CDATA[This LL-34 packaged voltage regulator diode has a precise 9.1V stable voltage (VZ) and an ultra-low reverse leakage current IR of only 0.1uA, demonstrating excellent performance under 5mA IZT conditions. The maximum dissipation power reaches 0.5W, ensuring efficient and stable voltage regulation in various circuit applications. Especially suitable for high-precision power management and system protection needs, it is an ideal choice for miniaturized electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[ZMM8V2(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zmm8v2-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:28:32</pubDate>
	<description><![CDATA[This LL-34 packaged voltage regulator diode is designed specifically for precision voltage stability. It has a stable voltage value of 8.2V (VZ) and a negligible reverse current of only 0.1uA (IR), ensuring low power consumption and high stability. The 5mA IZT current ensures excellent transient response capability, with a maximum power dissipation of 0.5W. It is suitable for various circuit protection and voltage stabilization applications, with excellent performance and is trustworthy.]]></description>
</item>
<item>
	<title><![CDATA[ZMM7V5(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zmm7v5-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:28:21</pubDate>
	<description><![CDATA[This LL-34 packaged voltage regulator diode has a precise voltage stability characteristic (VZ) of 7.5V and ensures excellent energy efficiency and stability with an ultra-low reverse current (IR) of 0.1uA. Its 5mA transient current IZT capability endows the device with excellent response performance in rapidly changing environments. The maximum power dissipation is 0.5W, suitable for high-precision voltage regulation and circuit protection applications. With outstanding performance, it becomes the ideal choice in your design.]]></description>
</item>
<item>
	<title><![CDATA[ZMM6V8(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zmm6v8-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:28:10</pubDate>
	<description><![CDATA[This LL-34 packaged voltage regulator diode has a precise voltage regulation function (VZ) of 6.8V and is equipped with an ultra-low reverse current of 0.1uA (IR), effectively ensuring long-term stable operation and energy-saving effects of the equipment. The transient current IZT capability of 5mA ensures excellent response speed even under rapidly changing conditions. The maximum power dissipation is 0.5W, suitable for various high-precision voltage regulation and circuit protection application scenarios, to meet your circuit design needs with excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[ZMM6V2(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zmm6v2-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:27:59</pubDate>
	<description><![CDATA[This LL-34 packaged voltage regulator diode provides precise voltage regulation for 6.2V voltage, with a 0.1uA ultra-low reverse current (IR) to ensure efficient and stable operation of the device at low power consumption. The 5mA transient IZT current endows it with excellent response speed and load adaptability. The maximum power dissipation is 0.5W, suitable for various high-precision voltage regulation and circuit protection application scenarios, meeting your design needs with its excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[ZMM5V6(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zmm5v6-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:27:48</pubDate>
	<description><![CDATA[This LL-34 packaged voltage regulator diode has a precise voltage stability performance (VZ) of 5.6V and is equipped with an ultra-low 0.1uA reverse current (IR) to ensure efficient and stable operation of the circuit in a low-power state. The 5mA transient IZT current capability enables the device to respond quickly and maintain stable output when the load changes. The maximum power dissipation is 0.5W, suitable for various precision voltage regulation and circuit protection application scenarios, meeting your design needs with excellent efficiency.]]></description>
</item>
<item>
	<title><![CDATA[ZMM5V1(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zmm5v1-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:27:37</pubDate>
	<description><![CDATA[This LL-34 packaged voltage regulator diode is designed to provide precise voltage regulation for 5.1V voltage. Its ultra-low reverse current (IR) of 0.1uA ensures energy-saving and stable equipment operation. The 5mA transient IZT current endows the device with excellent response speed and load adaptability. The maximum power dissipation is 0.5W, suitable for various high-precision voltage regulation and circuit protection scenarios, to meet your design needs with outstanding performance.]]></description>
</item>
<item>
	<title><![CDATA[ZMM4V7(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zmm4v7-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:27:26</pubDate>
	<description><![CDATA[This LL-34 packaged voltage regulator diode is designed to provide precise voltage regulation for 4.7V, with a low reverse current (IR) of 0.5uA, ensuring long-lasting and stable operation of the device in a low-power state. The 5mA transient IZT current endows it with excellent response speed and load adaptability. The maximum power dissipation is 0.5W, suitable for various precision voltage regulation and circuit protection application scenarios, meeting your design needs with its high efficiency and stability.]]></description>
</item>
<item>
	<title><![CDATA[ZMM4V3(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zmm4v3-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:27:16</pubDate>
	<description><![CDATA[This LL-34 packaged voltage regulator diode provides a precise 4.3V stable voltage (VZ) and has a low reverse current IR of only 1uA, demonstrating excellent performance under 5mA IZT conditions. The maximum dissipation power reaches 0.5W, ensuring efficient and stable voltage control in various application scenarios. Especially suitable for miniaturization and high-precision circuit design, it is an ideal low-voltage power supply voltage stabilization solution.]]></description>
</item>
<item>
	<title><![CDATA[ZMM3V9(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zmm3v9-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:27:05</pubDate>
	<description><![CDATA[This LL-34 packaged voltage regulator diode has a precise voltage stabilization performance of 3.9V (VZ) and a reverse current (IR) as low as 2uA, ensuring efficient and energy-saving operation. The transient current capability of 5mA IZT endows it with excellent response speed and stability. The maximum power dissipation is 0.5W, suitable for various precision voltage regulation and circuit protection scenarios, and with its excellent performance, it meets strict application requirements.]]></description>
</item>
<item>
	<title><![CDATA[ZMM3V6(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zmm3v6-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:26:54</pubDate>
	<description><![CDATA[This LL-34 packaged voltage regulator diode is designed for precise voltage regulation of 3.6V, with a low reverse current (IR) of 2uA, effectively ensuring efficient, energy-saving, and stable operation of the circuit. The 5mA transient IZT current ensures that the device responds quickly under dynamic loads and maintains stable output. The maximum power dissipation is 0.5W, suitable for various precision voltage regulation and circuit protection application scenarios, meeting your circuit design needs with its excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[ZMM3V3(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zmm3v3-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:26:43</pubDate>
	<description><![CDATA[This LL-34 packaged voltage regulator diode focuses on providing precise voltage stability performance (VZ) of 3.3V, with a low reverse current (IR) of 2uA, ensuring long-lasting and stable operation of the device at low power consumption. The 5mA transient IZT current capability enables the device to quickly respond to changes in circuit state and maintain efficient performance. The maximum power dissipation is 0.5W, suitable for various precision voltage regulation and circuit protection scenarios, to meet your design and application needs with powerful performance.]]></description>
</item>
<item>
	<title><![CDATA[ZMM3V0(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/zmm3v0-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:26:32</pubDate>
	<description><![CDATA[This LL-34 packaged voltage regulator diode focuses on precise voltage regulation of 3V, with a 4uA reverse current (IR), effectively controlling energy consumption while ensuring stability. 5mA transient IZT current provides fast response capability, suitable for load change scenarios. The maximum power dissipation is 0.5W, widely used in various low-voltage voltage stabilization and circuit protection designs to meet diverse needs with stability and practicality.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C36S(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c36s-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:26:10</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-323      Parameter Introduction:Current/A: 0.01, voltage/V: 36, voltage drop/V: 0.9, reverse current/uA: 0.1, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100358     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BZT52C24S(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c24s-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:25:59</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-323      Parameter Introduction:Current/A: 0.01, voltage/V: 24, voltage drop/V: 0.9, reverse current/uA: 0.1, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100362     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BZT52C15S(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c15s-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:25:37</pubDate>
	<description><![CDATA[This SOD-323 packaged voltage regulator diode provides a precise voltage regulation solution for 15V voltage, with an ultra-low reverse current of 0.04uA (IR), ensuring excellent stability at low power consumption. The 5mA transient IZT current ensures fast response to circuit changes and strong load adaptability. The maximum power dissipation is 0.2W, which is particularly suitable for the design of small electronic devices with limited space and requiring high-precision voltage regulation protection. With compact size and excellent performance, it meets strict requirements.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C10S(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c10s-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:25:15</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-323      Parameter Introduction:Current/A: 0.01, voltage/V: 10, voltage drop/V: 0.9, reverse current/uA: 0.2, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100359     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BZT52C7V5S(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c7v5s-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:25:04</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-323      Parameter Introduction:Current/A: 0.01, voltage/V: 7.5, voltage drop/V: 0.9, reverse current/uA: 1, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100357     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BZT52C6V8S(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c6v8s-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:24:53</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-323      Parameter Introduction:Current/A: 0.01, voltage/V: 6.8, voltage drop/V: 0.9, reverse current/uA: 2, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100365     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BZT52C6V2S(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c6v2s-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:24:43</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-323      Parameter Introduction:Current/A: 0.01, voltage/V: 6.2, voltage drop/V: 0.9, reverse current/uA: 3, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100364     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BZT52C5V6S(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c5v6s-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:24:32</pubDate>
	<description><![CDATA[This SOD-323 packaged voltage regulator diode provides precise voltage regulation for 5.6V voltage, equipped with a low reverse current (IR) of 0.8uA, achieving efficient and stable operation in a low-power state. The 5mA transient IZT current ensures fast response to circuit changes and strong load adaptability. The maximum power dissipation is 0.2W, especially suitable for circuit designs that are compact in space and require high-precision voltage regulation protection, meeting diverse application requirements with compact size and excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C5V1S(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c5v1s-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:24:21</pubDate>
	<description><![CDATA[This SOD-323 packaged voltage regulator diode is designed to provide high-precision voltage regulation for 5.1V voltage, equipped with reverse current (IR) as low as 1.6uA, ensuring efficient and stable operation under low-power conditions. The 5mA transient IZT current endows the device with excellent load response capability. The maximum power dissipation is 0.2W, suitable for compact space and high-precision voltage regulation needs, meeting various circuit protection application scenarios with compact size and excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C3V6S(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c3v6s-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:23:59</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-323      Parameter Introduction:Current/A: 0.01, voltage/V: 3.6, voltage drop/V: 0.9, reverse current/uA: 5, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100363     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BZT52C3V3S(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c3v3s-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:23:48</pubDate>
	<description><![CDATA[This SOD-323 packaged voltage regulator diode focuses on providing precise voltage regulation of 3.3V, with a 4uA reverse current (IR) to ensure stable operation at low power consumption. The 5mA transient IZT current ensures fast adaptation to load changes and excellent response performance. The maximum power dissipation is 0.2W, especially suitable for small circuit designs with limited space and requiring high-precision voltage regulation protection, meeting diverse needs with compact size and excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C3V0S(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c3v0s-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:23:37</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-323      Parameter Introduction:Current/A: 0.01, voltage/V: 3, voltage drop/V: 0.9, reverse current/uA: 10, power consumption/W: 0.2,     (Ordering Information):  Product Code: H100380     Minimum packaging: 3000pcs      Gross weight/gram :0.02g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BZT52B5V1S(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52b5v1s-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:23:26</pubDate>
	<description><![CDATA[This SOD-323 packaged voltage regulator diode focuses on providing 5.1V precision voltage regulation, with a low reverse current (IR) of 2uA, ensuring long-lasting and stable operation at low power consumption. 5mA transient IZT current ensures fast response to load changes and strong adaptability. The maximum power dissipation is 0.2W, especially suitable for circuit protection applications with limited space and requiring high-precision voltage regulation, meeting design requirements with compact size and excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[BZT52C27(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c27-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:23:15</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-123      Parameter Introduction:Current/A: 0.01, voltage/V: 27, voltage drop/V: 0.9, reverse current/uA: 0.1, power consumption/W: 0.5,     (Ordering Information):  Product Code: H100371     Minimum packaging: 3000pcs      Gross weight/gram :0.035g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BZT52C22(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c22-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:22:53</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-123      Parameter Introduction:Current/A: 0.01, voltage/V: 22, voltage drop/V: 0.9, reverse current/uA: 0.1, power consumption/W: 0.5,     (Ordering Information):  Product Code: H100372     Minimum packaging: 3000pcs      Gross weight/gram :0.035g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BZT52C11(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c11-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:21:37</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-123      Parameter Introduction:Current/A: 0.01, voltage/V: 11, voltage drop/V: 0.9, reverse current/uA: 0.1, power consumption/W: 0.5,     (Ordering Information):  Product Code: H100368     Minimum packaging: 3000pcs      Gross weight/gram :0.035g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BZT52C4V3(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c4v3-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:19:59</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-123      Parameter Introduction:Current/A: 0.01, voltage/V: 4.3, voltage drop/V: 0.9, reverse current/uA: 3, power consumption/W: 0.5,     (Ordering Information):  Product Code: H100378     Minimum packaging: 3000pcs      Gross weight/gram :0.035g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BZT52C3V9(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzt52c3v9-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:19:48</pubDate>
	<description><![CDATA[Product Category: Zener Diode     Packing: SOD-123      Parameter Introduction:Current/A: 0.01, voltage/V: 3.9, voltage drop/V: 0.9, reverse current/uA: 3, power consumption/W: 0.5     (Ordering Information):  Product Code: H100367     Minimum packaging: 3000pcs      Gross weight/gram :0.035g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BZX84C12(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzx84c12-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:19:15</pubDate>
	<description><![CDATA[This SOT-23 packaged voltage regulator diode provides precise voltage regulation for 12V voltage, equipped with ultra-low 0.1uA reverse current (IR), ensuring efficient and stable operation at low power consumption. The 5mA transient IZT current endows it with excellent response speed and load adaptability. The maximum power dissipation is 0.2W, especially suitable for high-precision voltage regulation and circuit protection applications with compact space, meeting various design requirements with compact size and excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[BZX84C5V1(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/zener-diode/">Zener Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/zener-diode/bzx84c5v1-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:19:04</pubDate>
	<description><![CDATA[This SOT-23 packaged voltage regulator diode is designed to provide precise voltage regulation for 5.1V voltage, with a reverse current (IR) as low as 2uA, ensuring efficient and stable operation in low-power conditions. The 5mA transient IZT current endows the device with excellent load response capability. The maximum power dissipation is 0.2W, especially suitable for application scenarios with compact space and high-precision voltage regulation requirements, meeting various circuit protection design requirements with compact size and excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[SK34(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/sk34-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:18:53</pubDate>
	<description><![CDATA[This SMA packaged Schottky diode is particularly optimized for low forward voltage drop and high current processing capability. With a reverse withstand voltage of 40V and a continuous forward current of 3A, its excellent forward conduction voltage VF is only 0.55V, ensuring high efficiency and low loss performance in high-frequency and high current applications. Suitable for switch mode power supplies, continuous current, and various high-end rectification solutions.]]></description>
</item>
<item>
	<title><![CDATA[SK24(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/sk24-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:18:42</pubDate>
	<description><![CDATA[This SOD-123FL packaged Schottky diode has a high reverse withstand voltage of 40V and a high current carrying capacity of 2A. Its excellent forward conduction voltage is as low as 0.55V. Specially designed for high-efficiency, high-speed switching, and low loss applications, suitable for power conversion, battery protection, and high-frequency inverters, it is an ideal choice for compact electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[B5817W(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/b5817w-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:18:31</pubDate>
	<description><![CDATA[This SOD-123 package Schottky diode is designed specifically for low voltage, high-speed switching applications. Equipped with a high reverse withstand voltage (VR) of 20V and a continuous forward current (IF) of up to 1A, it only produces a small 0.45V voltage drop (VF) during forward conduction. With its excellent high-speed performance and low power consumption characteristics, it is widely used in power conversion, battery protection, and high-frequency circuits, making it a high-quality component choice for high-performance electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[SS24(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss24-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:18:20</pubDate>
	<description><![CDATA[This SMB packaged Schottky diode is well-designed, with a reverse withstand voltage of 40V and a forward current carrying capacity of 2A. Particularly outstanding is its ultra-low forward conduction voltage of 0.55V VF, ensuring efficient power conversion and energy-saving performance. Suitable for applications such as power rectification, high-frequency switching circuits, and battery management systems.]]></description>
</item>
<item>
	<title><![CDATA[SS24(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss24-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:18:10</pubDate>
	<description><![CDATA[This SMA packaged Schottky diode is designed for efficient and low loss applications. It has a high reverse withstand voltage of 40V, a large current carrying capacity of 2A, and an ultra-low forward conduction voltage VF of only 0.55V, ensuring excellent power conversion efficiency and high-speed switching performance. Suitable for switch mode power supplies, high-frequency rectifier circuits, and low-voltage differential voltage stabilization applications, its miniaturized packaging design facilitates ideal layout and energy-saving effects in compact electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SS26(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss26-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:17:59</pubDate>
	<description><![CDATA[This SMA packaged Schottky diode is designed specifically for high-speed, low loss applications, with a high reverse withstand voltage of 60V and a high current processing capacity of 2A. Its excellent forward conduction voltage VF is only 0.7V, ensuring efficient power conversion and fast recovery performance. Suitable for high-frequency switching power supplies, freewheeling circuits, and high-efficiency rectifier modules, the compact packaging size facilitates integration and use in compact electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SS26(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss26-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:17:48</pubDate>
	<description><![CDATA[This SMB packaged Schottky diode is particularly suitable for high-efficiency power supply systems. It has a high reverse withstand voltage of 60V and a strong forward current carrying capacity of 2A. The forward conduction voltage as low as 0.7V ensures excellent energy consumption performance and high-speed switching response. Suitable for application in high-frequency switching power supplies, DC/DC converters, and freewheeling protection circuits, compact packaging design is conducive to the miniaturization layout requirements of modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SS36(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss36-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:17:37</pubDate>
	<description><![CDATA[This SMA encapsulates Schottky diodes and is designed specifically for efficient power conversion. It has a stable reverse withstand voltage of 60V and a high current processing capacity of 3A. Its excellent forward conduction voltage VF is only 0.7V, ensuring low loss and high-speed switching response. Suitable for DC-DC converters, high-frequency switching power supplies, and freewheeling protection applications, compact packaging is conducive to modern circuit integration requirements.]]></description>
</item>
<item>
	<title><![CDATA[SS36(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss36-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:17:26</pubDate>
	<description><![CDATA[This SMB packaged Schottky diode is particularly suitable for high-efficiency power supply systems. It has a high reverse withstand voltage of 60V and a strong forward current carrying capacity of 2A. The forward conduction voltage as low as 0.7V ensures excellent energy consumption performance and high-speed switching response. Suitable for application in high-frequency switching power supplies, DC/DC converters, and freewheeling protection circuits, compact packaging design is conducive to the miniaturization layout requirements of modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SS34(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss34-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:17:15</pubDate>
	<description><![CDATA[This SMC packaged Schottky diode is designed for high-efficiency rectification applications. It has 40V reverse withstand voltage and 3A high current processing ability, and its excellent 0.55V forward conduction voltage VF ensures low power consumption and fast response performance, suitable for power conversion, switching power supplies, and high-frequency circuits.]]></description>
</item>
<item>
	<title><![CDATA[SS34(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss34-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:17:04</pubDate>
	<description><![CDATA[This SMA packaged Schottky diode has a 40V reverse withstand voltage and 3A high current processing capability. Its excellent 0.55V forward conduction voltage VF ensures high efficiency and low power consumption. Especially suitable for power conversion, high-frequency switching circuits, and rectification applications that require fast recovery time.]]></description>
</item>
<item>
	<title><![CDATA[SS34(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss34-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:16:53</pubDate>
	<description><![CDATA[This SMB packaged Schottky diode has a high reverse withstand voltage of 40V and a 3A high current processing capability. Its forward conduction voltage VF as low as 0.55V ensures excellent energy efficiency and high-speed switching performance. Suitable for applications that require efficient rectification such as power conversion and high-frequency switching circuits.]]></description>
</item>
<item>
	<title><![CDATA[SS56(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss56-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:16:42</pubDate>
	<description><![CDATA[This SMC packaged Schottky diode has a 60V reverse withstand voltage and a strong 5A forward current. Its forward conduction voltage VF, as low as 0.7V, ensures excellent power conversion efficiency and fast response speed. Suitable for high current rectification, power converters, and high-frequency switching applications.]]></description>
</item>
<item>
	<title><![CDATA[SS56(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss56-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:16:32</pubDate>
	<description><![CDATA[This SMB packaged Schottky diode has a powerful 60V reverse withstand voltage and a continuous forward current of up to 5A. Its excellent forward conduction voltage VF is as low as 0.7V, ensuring excellent efficiency and high-speed switching performance in high current applications. Widely applicable in fields such as power conversion, high-frequency rectification, and battery management systems.]]></description>
</item>
<item>
	<title><![CDATA[SS56(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss56-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:16:21</pubDate>
	<description><![CDATA[High performance SMA packaged Schottky diodes with high reverse withstand voltage of 60V and high current processing capacity of 5A. The low forward conduction voltage VF is only 0.7V, achieving excellent energy efficiency and high-speed switching performance. Suitable for efficient power conversion, high-frequency switching circuits, and freewheeling protection applications, the compact packaging design facilitates the miniaturization and integration of modern electronic devices, providing excellent power loss control and stability.]]></description>
</item>
<item>
	<title><![CDATA[SS54(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss54-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:16:10</pubDate>
	<description><![CDATA[The SMC packaged Schottky diode has a 40V reverse withstand voltage and 5A high current processing capability. Its excellent 0.55V forward conduction voltage VF ensures high efficiency and low power consumption performance. Suitable for power conversion, high-frequency switching circuits, and high current rectification applications.]]></description>
</item>
<item>
	<title><![CDATA[SS54(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss54-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:15:59</pubDate>
	<description><![CDATA[This SMB packaged diode has a high reverse withstand voltage of 40V and a strong 5A forward current carrying capacity. Its ultra-low forward conduction voltage VF is only 0.55V, ensuring high efficiency and low losses. Suitable for power conversion, high-frequency rectification, and high current circuit protection applications.]]></description>
</item>
<item>
	<title><![CDATA[SS310(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss310-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:15:48</pubDate>
	<description><![CDATA[This SMB packaged Schottky diode has a high reverse withstand voltage of 100V and 3A high current processing capability. Its forward conduction voltage VF as low as 0.85V ensures high efficiency and fast recovery characteristics. Widely used in power conversion, switching circuits, and battery protection, providing excellent rectification performance.]]></description>
</item>
<item>
	<title><![CDATA[SS310(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss310-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:15:37</pubDate>
	<description><![CDATA[This SMA packaged Schottky diode is designed specifically for efficient power conversion. Equipped with a stable reverse withstand voltage of 100V and a high current processing capacity of 3A, its forward conduction voltage VF is as low as 0.85V, achieving fast recovery and low loss. Suitable for switch mode power supplies, high-frequency rectification, and continuous current protection applications, compact packaging is conducive to optimizing circuit board space.]]></description>
</item>
<item>
	<title><![CDATA[SS210(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss210-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:15:26</pubDate>
	<description><![CDATA[This high-performance Schottky diode packaged in SMB is designed specifically for high-performance applications. It has a maximum reverse voltage withstand (VR) of 100V, a continuous forward current of 2A (IF), and a forward conduction voltage of only 0.85V (VF). The device has a compact size and is suitable for high-density circuit board layout. It is widely used in power conversion, switching regulators, and high-frequency rectification, ensuring low power consumption and excellent switching speed.]]></description>
</item>
<item>
	<title><![CDATA[SS210(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss210-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:15:15</pubDate>
	<description><![CDATA[This SMA package Schottky diode has a high reverse withstand voltage of 100V and a strong forward current capability of 2A. Its outstanding VF value is 0.85V, ensuring low power consumption and high efficiency. Suitable for high-frequency switches, power supply rectifiers, and voltage stabilizing circuits, the compact packaging design facilitates the integration of modern electronic products with limited space, providing fast recovery and low loss performance advantages.]]></description>
</item>
<item>
	<title><![CDATA[LL4148(LL-34)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ll4148-ll-34-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:15:04</pubDate>
	<description><![CDATA[This LL-34 packaged switching diode has a reverse withstand voltage of 100V and a forward current capacity of 0.2A. Its 1V forward conduction voltage VF ensures efficient operation. Suitable for various electronic devices such as power conversion, signal switching, and circuit protection, providing stable and reliable switching functions.]]></description>
</item>
<item>
	<title><![CDATA[SB1045L(TO-277)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/sb1045l-to-277-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:14:53</pubDate>
	<description><![CDATA[This TO-277 packaged Schottky diode has a reverse withstand voltage of 45V and a high current carrying capacity of up to 10A. Its excellent 0.53V forward conduction voltage VF ensures ultra-low power consumption and high efficiency performance. Suitable for high demand applications such as high-power rectification, power switches, and battery management systems.]]></description>
</item>
<item>
	<title><![CDATA[SS14(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss14-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:14:43</pubDate>
	<description><![CDATA[This SMA packaged Schottky diode is designed specifically for low-power and high-performance applications. It has a stable reverse withstand voltage of 40V, a rated forward current of up to 1A, and an excellent forward conduction voltage VF of only 0.55V, ensuring high efficiency and fast response speed. Suitable for circuits such as switching power supplies, high-frequency rectifiers, and battery protection, the compact packaging size facilitates optimal layout in compact electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[S2M(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/s2m-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:14:32</pubDate>
	<description><![CDATA[This SMA packaged general-purpose diode has a high reverse withstand voltage of 1000V and strong forward current processing capability of 2A. Its forward conduction voltage VF as low as 1.1V ensures efficient performance. Suitable for various power supply rectification, overvoltage protection, and high current switching circuit applications.]]></description>
</item>
<item>
	<title><![CDATA[US1M(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/us1m-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:14:21</pubDate>
	<description><![CDATA[This SMA packaged fast recovery diode has a high reverse withstand voltage of 1000V and a forward current carrying capacity of 1A. Its fast recovery characteristics ensure efficient operation in high voltage environments. The forward conduction voltage VF of 1.7V is suitable for applications in switching power supplies, inverters, and other applications that require high-speed rectification and low loss.]]></description>
</item>
<item>
	<title><![CDATA[US2M(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/us2m-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:14:10</pubDate>
	<description><![CDATA[This SMA packaged fast recovery diode is specifically designed for high-voltage and high-frequency applications, with a reverse withstand voltage of up to 1000V and a continuous forward current processing capability of 2A. Its forward conduction voltage of 1.85V ensures efficient performance in high voltage environments. Suitable for applications such as switch mode power supplies, frequency converters, and motor drives that require fast recovery characteristics, compact packaging facilitates integration and heat dissipation optimization.]]></description>
</item>
<item>
	<title><![CDATA[RS1M(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/rs1m-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:13:59</pubDate>
	<description><![CDATA[This SMA packaged fast recovery diode is designed for high-performance applications, with a reverse withstand voltage of up to 1000V and a stable 1A forward current. Its 1.3V forward conduction voltage VF ensures fast recovery characteristics. Suitable for high-voltage conversion, switching power supply, and various circuit protection that require high-speed rectification.]]></description>
</item>
<item>
	<title><![CDATA[RS2M(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/rs2m-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:13:48</pubDate>
	<description><![CDATA[This SMA packaged fast recovery diode is designed specifically for high-voltage applications, providing 1000V high reverse withstand voltage and 2A forward current capability. It has fast recovery characteristics and a 1.3V forward conduction voltage VF, suitable for high voltage circuits that require efficient rectification in switching power supplies, inverters, and other high voltage circuits.]]></description>
</item>
<item>
	<title><![CDATA[ES1M(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/es1m-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:13:37</pubDate>
	<description><![CDATA[This SMA packaged fast recovery diode is designed specifically for high-voltage applications. Equipped with excellent reverse withstand voltage of 1000V and 1A continuous forward current processing ability, its forward conduction voltage VF is 1.7V, providing efficient rectification and fast recovery characteristics in high voltage environments. Widely used in switch mode power supplies, inverters, and high-voltage circuit protection applications, compact packaging is suitable for modern electronic device integration.]]></description>
</item>
<item>
	<title><![CDATA[US1J(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/us1j-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:13:26</pubDate>
	<description><![CDATA[This SMA packaged fast recovery diode has a high reverse withstand voltage of 600V and a forward current capacity of 1A. Its 1.7V forward conduction voltage VF ensures high efficiency and low loss in high-frequency switching applications. Suitable for power conversion, inverters, and other circuits that require high-speed rectification.]]></description>
</item>
<item>
	<title><![CDATA[ES2J(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/es2j-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:13:15</pubDate>
	<description><![CDATA[This fast recovery diode adopts SMA packaging and is designed specifically for high-speed switching and efficient rectification. With a high reverse voltage withstand (VR) of 600V and a continuous forward current of 2A (IF), the operating VF is only 1.7V, ensuring low conduction loss. Suitable for high-voltage, high-frequency switching power supplies and frequency converters, compact packaging is conducive to space saving and thermal management optimization, achieving excellent circuit performance.]]></description>
</item>
<item>
	<title><![CDATA[ES1J(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/es1j-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:13:04</pubDate>
	<description><![CDATA[This SMA packaged fast recovery diode has a high reverse withstand voltage of 600V, provides 1A continuous forward current capability, and has a forward conduction voltage of 1.7V. Specially designed for high-frequency switching power supplies, inverters, and high-voltage rectification applications, achieving fast reverse recovery and efficient conversion. Compact packaging is suitable for the space limitation requirements of modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[M4(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/m4-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:12:54</pubDate>
	<description><![CDATA[This SMA package universal diode has a high reverse withstand voltage of 400V and is suitable for high-voltage protection and rectification scenarios. Provide a continuous forward current (IF) of 1A and demonstrate good energy efficiency ratio at a forward conduction voltage of 1V. Suitable for various power conversion, inverter, and general circuit protection applications, its miniaturized design facilitates stable and reliable performance on circuit boards with limited space.]]></description>
</item>
<item>
	<title><![CDATA[US1G(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/us1g-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:12:43</pubDate>
	<description><![CDATA[This fast recovery diode is packaged in SMA and has a high reverse withstand voltage of 400V and a forward current capacity of 1A. It has a fast recovery time and a forward conduction voltage of 1.3V VF. Suitable for circuits such as switching power supplies and high-frequency inverters, providing efficient rectification and freewheeling functions.]]></description>
</item>
<item>
	<title><![CDATA[ES1G(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/es1g-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:12:32</pubDate>
	<description><![CDATA[This SMA packaged fast recovery diode is designed specifically for high-speed switching and efficient rectification. It has a high reverse withstand voltage of 400V and a maximum forward current capacity of 1A. Its forward conduction voltage VF is as low as 1.25V, ensuring excellent energy efficiency and fast recovery performance. Suitable for high-frequency switching power supplies, inverters, and various circuits that require fast switching characteristics, compact SMA packaging is conducive to integration in limited space applications.]]></description>
</item>
<item>
	<title><![CDATA[SS320(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss320-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:12:21</pubDate>
	<description><![CDATA[This SMA packaged Schottky diode is designed specifically for high power and efficient conversion. It has excellent reverse withstand voltage of 200V and a large current carrying capacity of 3A. The forward conduction voltage VF is as low as 0.95V, ensuring excellent energy efficiency and high-speed switching performance. Suitable for DC-DC converters, switching power supplies, and high-frequency rectifier applications that require fast recovery characteristics.]]></description>
</item>
<item>
	<title><![CDATA[ES1D(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/es1d-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:12:10</pubDate>
	<description><![CDATA[This SMA packaged fast recovery diode has a high reverse withstand voltage of 200V and a continuous forward current capacity of 1A. Its low forward conduction voltage of 0.95V ensures efficient conversion. Specially designed for switch mode power supplies, high-frequency inverters, and rectifier circuits, achieving fast recovery and excellent heat dissipation performance. Compact SMA packaging facilitates the miniaturization and integration requirements of modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SS510(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss510-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:11:59</pubDate>
	<description><![CDATA[This SMA packaged Schottky diode is designed specifically for high-power applications. It has a reverse withstand voltage of 100V and a strong forward current carrying capacity of 5A. Its forward conduction voltage VF is as low as 0.85V, ensuring efficient conversion and fast recovery performance in high current environments. Widely used in switch mode power supplies, high-frequency rectifiers, and freewheeling protection circuits, compact packaging is suitable for the integration needs of modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SS16(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss16-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:11:48</pubDate>
	<description><![CDATA[This SMA packaged Schottky diode has a reverse withstand voltage of 60V and a forward current capability of 1A. Its excellent forward conduction voltage VF is as low as 0.7V, ensuring high efficiency and fast switching response. Suitable for high-frequency switching power supplies, DC-DC converters, and efficient rectifier circuits, the compact packaging design facilitates excellent performance in modern electronic devices with limited space.]]></description>
</item>
<item>
	<title><![CDATA[SS12(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss12-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:11:37</pubDate>
	<description><![CDATA[This SMA packaged Schottky diode is designed for efficient and low loss applications. Equipped with a reverse withstand voltage of 20V and a continuous forward current carrying capacity of 1A, its ultra-low forward conduction voltage VF is only 0.55V, ensuring excellent rectification efficiency and fast recovery performance. Suitable for DC-DC conversion, switching power supplies, and various low-voltage and high-frequency rectification situations, compact packaging is conducive to the integration of small electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[RS2MF(SMAF)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/rs2mf-smaf-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:11:26</pubDate>
	<description><![CDATA[This SMAF packaged fast recovery diode has an ultra strong reverse withstand voltage of up to 1000V and a 2A continuous forward current carrying capacity. Its outstanding VF value is 1.3V, which performs well in high voltage and high current environments, achieving fast recovery and low loss performance. Suitable for high-voltage power conversion, high-frequency switching circuits, and motor drives, the compact SMAF packaging design is conducive to efficient integration and heat dissipation optimization.]]></description>
</item>
<item>
	<title><![CDATA[US1MF(SMAF)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/us1mf-smaf-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:11:15</pubDate>
	<description><![CDATA[This fast recovery diode is packaged in SMAF and has a high reverse withstand voltage of 1000V and a processing capacity of 1A large current. The forward conduction voltage VF is as low as 1.7V. Specially designed for high-efficiency switching power supplies, high-frequency inverters, and pulse circuits, providing excellent reverse recovery performance and saving energy losses, it is an indispensable key component in compact high-power electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[ES1JF(SMAF)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/es1jf-smaf-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:11:05</pubDate>
	<description><![CDATA[This fast recovery diode is packaged in SMAF and has a high reverse withstand voltage of 600V and a large current processing capacity of 1A. The forward conduction voltage VF is only 1.7V. Suitable for efficient power conversion and high-frequency switching applications, with fast recovery time and low loss characteristics, it is an ideal choice for compact electronic devices and power modules, ensuring stable and efficient system operation.]]></description>
</item>
<item>
	<title><![CDATA[SS54F(SMAF)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/ss54f-smaf-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:10:54</pubDate>
	<description><![CDATA[This SMAF packaged Schottky diode is designed specifically for high current and high-performance applications. Equipped with 40V reverse withstand voltage and 5A high forward current carrying capacity, its ultra-low forward conduction voltage VF is only 0.55V, ensuring fast switching response and low power consumption performance. Suitable for power converters, high-frequency rectifiers, and freewheeling circuits, compact packaging is suitable for integrating high-performance electronic devices with limited space.]]></description>
</item>
<item>
	<title><![CDATA[1N5819WT(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/1n5819wt-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:10:43</pubDate>
	<description><![CDATA[This SOD-523 package Schottky diode is designed for high efficiency and low loss applications. It has a 40V reverse withstand voltage and a 0.35A forward current carrying capacity. Its ultra-low 0.6V forward conduction voltage VF ensures excellent power conversion efficiency and fast response speed, making it suitable for switch mode power supplies, high-frequency signal rectification, and battery protection circuits.]]></description>
</item>
<item>
	<title><![CDATA[SD103AWT(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/sd103awt-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:10:32</pubDate>
	<description><![CDATA[This SOD-523 package Schottky diode has a 40V reverse withstand voltage and 0.35A forward current capacity. Its excellent forward conduction voltage VF is as low as 0.6V, ensuring high efficiency and fast switching response. Suitable for low-voltage rectification and protection applications in miniaturized and low-power circuits, especially suitable for the design requirements of compact electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[1N4148WT(SOD-523)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/1n4148wt-sod-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:10:21</pubDate>
	<description><![CDATA[This SOD-523 packaged switching diode has a high reverse withstand voltage of 100V and a forward current capacity of 0.15A. It has a low forward conduction voltage of 1.25V, ensuring high efficiency and fast switching performance. Especially suitable for electronic devices with limited space, power converters, and low-power circuits, its micro packaging design is conducive to achieving compact application layouts.]]></description>
</item>
<item>
	<title><![CDATA[BAV21WS(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bav21ws-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:10:10</pubDate>
	<description><![CDATA[This SOD-323 packaged switch diode is particularly suitable for electronic designs with limited space. Equipped with a high reverse withstand voltage of 200V, a forward current carrying capacity of 0.2A, and a low forward conduction voltage of 1.25V, achieving fast switching and efficient performance. Suitable for various miniaturized circuits, power conversion, and signal processing applications, it is an ideal choice for compact equipment.]]></description>
</item>
<item>
	<title><![CDATA[BAS70WS(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bas70ws-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:09:59</pubDate>
	<description><![CDATA[This SOD-323 packaged Schottky diode has a reverse withstand voltage of 70V and a forward current capacity of 0.07A. The forward conduction voltage is as low as 1V, ensuring high efficiency and fast recovery. Suitable for low-voltage rectification, protection, and signal processing applications in miniaturized and low-power electronic devices, with compact dimensions for compact circuit layout.]]></description>
</item>
<item>
	<title><![CDATA[1SS357(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/1ss357-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:09:48</pubDate>
	<description><![CDATA[This SOD-323 package Schottky diode has a reverse withstand voltage of 45V and a forward current rating of 0.1A. Its excellent low forward conduction voltage VF is 0.6V. Suitable for applications such as high-frequency switches, low-voltage rectifiers, and battery protection, it is an ideal choice for energy-saving electronic devices due to its compact size and high efficiency, achieving fast switching and low-power operation.]]></description>
</item>
<item>
	<title><![CDATA[BAS40WS(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bas40ws-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:09:37</pubDate>
	<description><![CDATA[This SOD-323 package Schottky diode is specifically designed for low voltage and low current rectification applications. It has a reverse withstand voltage of 40V and a forward current carrying capacity of 0.2A. Its forward conduction voltage VF is 1V, ensuring high efficiency and fast switching response. Suitable for miniaturized electronic devices, power converters, and high-frequency signal processing applications, compact design facilitates circuit layout with limited space.]]></description>
</item>
<item>
	<title><![CDATA[B5819WS(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/b5819ws-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:09:26</pubDate>
	<description><![CDATA[This SOD-323 packaged Schottky diode has a high reverse withstand voltage of 40V and a high current processing capacity of 1A. Its forward conduction voltage VF is as low as 0.6V, ensuring excellent energy efficiency performance and fast recovery speed. Suitable for low-voltage and high current rectification applications, such as switch mode power supplies, high-frequency circuits, and high-efficiency electronic equipment design, miniaturized packaging is conducive to compact layout.]]></description>
</item>
<item>
	<title><![CDATA[SD103AWS(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/sd103aws-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:09:16</pubDate>
	<description><![CDATA[This SOD-323 package Schottky diode achieves excellent performance with its compact size. Equipped with a reverse withstand voltage of 40V and a forward current carrying capacity of 0.35A, with a forward conduction voltage VF as low as 0.6V, ensuring high efficiency and fast switching response. Suitable for low-voltage rectification, protection circuits, and high-frequency signal processing applications in miniaturized electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[1N4148WS(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/1n4148ws-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:09:05</pubDate>
	<description><![CDATA[This SOD-323 packaged diode is suitable for precision electronic circuit design. Equipped with a high reverse withstand voltage of 100V, providing a forward current capability of 0.3A, and a lower forward conduction voltage VF of 1.25V, ensuring high efficiency and low power consumption performance. The compact SOD-323 package is suitable for modern miniaturization requirements and is widely used in signal protection, voltage stabilization, and high-frequency rectification scenarios.]]></description>
</item>
<item>
	<title><![CDATA[SM4007PL(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/sm4007pl-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:08:54</pubDate>
	<description><![CDATA[This universal diode is packaged in SOD-123FL and has excellent 1000V reverse withstand voltage and 1A forward current processing capability. Its forward conduction voltage VF, as low as 1.1V, ensures high efficiency and fast response speed, making it suitable for various power rectification, overvoltage protection, and high-frequency conversion circuits.]]></description>
</item>
<item>
	<title><![CDATA[A7(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/a7-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:08:43</pubDate>
	<description><![CDATA[This universal diode is packaged in SOD-123 and has a reverse withstand voltage of up to 1000V and a forward current capacity of 1A. Its forward conduction voltage VF is only 1.1V, ensuring high efficiency and low loss. Suitable for various power rectification, overvoltage protection, and general circuit design requirements.]]></description>
</item>
<item>
	<title><![CDATA[FR107(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/fr107-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:08:32</pubDate>
	<description><![CDATA[This fast recovery diode is packaged in SOD-123FL and designed specifically for high-efficiency switching applications. It has a reverse withstand voltage of up to 1000V and a forward current capacity of 1A. Its fast recovery characteristics are combined with a forward conduction voltage of 1.3V, ensuring excellent performance in high-voltage inverter, high-frequency conversion, and high-efficiency power supply protection scenarios.]]></description>
</item>
<item>
	<title><![CDATA[S1M(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/s1m-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:08:21</pubDate>
	<description><![CDATA[This universal diode is packaged in SOD-123FL and has a reverse withstand voltage of up to 1000V and a forward current processing capability of 1A. Its 1.1V forward conduction voltage VF ensures high efficiency and wide applicability, suitable for power rectification, overvoltage protection, and various general circuit design requirements.]]></description>
</item>
<item>
	<title><![CDATA[F1M(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/f1m-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:08:10</pubDate>
	<description><![CDATA[This SOD-123FL packaged universal diode has excellent high reverse voltage resistance, up to 1000V, and provides 1A continuous forward current. Its positive conduction voltage VF is 1.3V, suitable for high-voltage protection and efficient rectification applications. Compact packaging design is particularly suitable for circuit requirements in space limited environments and is widely used in power conversion, inverters, and various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[K24(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/k24-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:07:59</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SOD-123FL      Parameter Introduction:Current/A: 2, voltage/V: 40, voltage drop/V: 0.55, reverse current/uA: 100, surge current/A: 50,     (Ordering Information):  Product Code: H102593     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[B5819W(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/b5819w-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:07:48</pubDate>
	<description><![CDATA[This SOD-123 package Schottky diode has a rated reverse voltage of 40V and a continuous forward current of up to 1A. This device has low forward voltage drop and high-speed switching characteristics, and is widely used in switching power supplies, DC-DC converters, and battery protection circuits, effectively improving system efficiency and ensuring reliable voltage regulation.]]></description>
</item>
<item>
	<title><![CDATA[1N5819W(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/1n5819w-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:07:37</pubDate>
	<description><![CDATA[This Schottky diode is packaged in SOD-123 and has a reverse withstand voltage of 40V and a forward current capability of 0.35A. Its excellent forward conduction voltage VF is as low as 0.6V, ensuring high efficiency and low power consumption performance. Suitable for precision circuits such as switching power supplies, high-frequency converters, and battery protection.]]></description>
</item>
<item>
	<title><![CDATA[SD103AW(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/sd103aw-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:07:26</pubDate>
	<description><![CDATA[This SOD-123 package Schottky diode is designed for high efficiency and low loss applications. Equipped with 40V reverse withstand voltage and 0.35A forward current carrying capacity, its superior VF value is only 0.6V, ensuring fast switching and efficient rectification performance. Suitable for power conversion, freewheeling protection, and other miniaturized circuit requirements, compact packaging is a design solution that is convenient for limited space.]]></description>
</item>
<item>
	<title><![CDATA[1N4148W(SOD-123)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/1n4148w-sod-123-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:07:15</pubDate>
	<description><![CDATA[This SOD-123 packaged switching diode has a reverse withstand voltage of up to 100V and a forward current capability of 0.3A, with a forward conduction voltage VF of 1.25V. Specially designed for applications that require high efficiency and miniaturization, suitable for power protection, signal switches, and electronic device control circuits, providing excellent performance and reliability, it is an indispensable component of modern compact electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[BAT54A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bat54a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:07:04</pubDate>
	<description><![CDATA[This SOT-23 package Schottky diode is designed for low voltage and efficient applications. Providing 30V reverse withstand voltage and 0.2A forward current processing capability, its 1V forward conduction voltage ensures excellent energy efficiency and fast recovery performance. A low loss solution suitable for switch mode power supplies, high-frequency rectifier circuits, and miniaturized electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BAT54C(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bat54c-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:06:54</pubDate>
	<description><![CDATA[This Schottky diode is packaged in SOT-23 and has a 30V reverse withstand voltage and a 0.2A forward current capacity. The forward conduction voltage VF is as low as 1V. Specially designed for efficient and high-speed switching applications, it is widely used in power conversion, high-frequency signal rectification, ESD protection, and other fields. Its compact size is suitable for the compact layout requirements of modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BAV99(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bav99-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:06:43</pubDate>
	<description><![CDATA[The SOT-23 packaged switching diode we provide is designed specifically for high-performance circuits. It has a reverse breakdown voltage (VR) of up to 70V and a maximum forward current (IF) of 0.2A, providing a forward voltage drop (VF) as low as 1.25V during forward conduction. This small, surface mount device is known for its fast switching performance and reliable durability, and is widely used in power conversion, electronic switching circuits, and various situations that require high-speed disconnection.]]></description>
</item>
<item>
	<title><![CDATA[MMBD4148A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/mmbd4148a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:06:32</pubDate>
	<description><![CDATA[This SOT-23 packaged switching diode is designed specifically for high-performance circuits. Equipped with a maximum reverse voltage (VR) of 100V and a rated forward current (IF) of 0.2A, it only produces a forward voltage drop (VF) of 1V during operation. Its excellent performance ensures fast and stable switching operations in various electronic devices, making it the ideal choice for your highly reliable system solution.]]></description>
</item>
<item>
	<title><![CDATA[1SS181(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/1ss181-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:06:21</pubDate>
	<description><![CDATA[This SOT-23 packaged switching diode has a high reverse withstand voltage of 85V and a forward current processing capability of 0.3A. Its low positive conduction voltage of 1.2V ensures efficient switching performance. Suitable for power conversion, electronic switching circuits, and low-power system design, the compact SOT-23 package facilitates integration and use in modern miniaturized electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[1SS184(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/1ss184-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:06:10</pubDate>
	<description><![CDATA[This SOT-23 packaged switching diode has a high reverse withstand voltage of 85V and a forward current capacity of 0.3A. Its forward conduction voltage is as low as 1.2V, ensuring efficient switching and low loss performance. Suitable for power conversion, electronic switch circuits, and various miniaturized designs, the compact SOT-23 package makes integration more convenient in modern electronic products with limited space.]]></description>
</item>
<item>
	<title><![CDATA[BAS21S(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bas21s-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:05:59</pubDate>
	<description><![CDATA[This switching diode adopts SOT-23 packaging and has a reverse withstand voltage of up to 250V and a forward current capacity of 0.4A, with excellent forward conduction voltage of 1.25V. Suitable for power conversion and electronic switch circuits that require high efficiency and high-speed switching, it has become a key component of modern high-performance electronic systems with its excellent performance and compact size.]]></description>
</item>
<item>
	<title><![CDATA[BAS21C(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bas21c-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:05:48</pubDate>
	<description><![CDATA[This SOT-23 packaged switching diode has a high reverse withstand voltage of 250V and a forward current processing capability of 0.2A. Its 1.25V forward conduction voltage achieves efficient switching and low loss. Suitable for various high-voltage and low current electronic applications, such as power converters, inverters, and compact circuit designs, providing stable and reliable switching performance.]]></description>
</item>
<item>
	<title><![CDATA[BAS21A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bas21a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:05:37</pubDate>
	<description><![CDATA[This SOT-23 packaged switching diode is particularly suitable for high voltage and low current applications. It has a reverse withstand voltage of up to 250V and a forward current carrying capacity of 0.4A. The forward conduction voltage of 1.25V ensures efficient switching performance. The compact SOT-23 packaging design is widely used in power conversion, electronic switch circuits, and miniaturized equipment to achieve stable and reliable performance output.]]></description>
</item>
<item>
	<title><![CDATA[BAS16(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bas16-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:05:26</pubDate>
	<description><![CDATA[This switching diode adopts a small SOT-23 package and has a reverse voltage withstand (VR) of up to 75V, which can safely withstand a maximum forward current (IF) of 0.3A. Its excellent electrical performance is reflected in the low forward conduction voltage (VF) of 1.25V, ensuring high efficiency and low power consumption. This device is particularly suitable for applications that require fast switching and high reliability, such as power management, load switches, and protection circuits for various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BAS70-05(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bas70-05-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:05:15</pubDate>
	<description><![CDATA[This SOT-23 package Schottky diode has a high reverse withstand voltage of 70V and a low forward current rating of 0.07A, with a forward voltage drop of only 1V during operation. With its excellent high-speed recovery capability and low power consumption characteristics, it is widely used in power management, high-frequency switching circuits, and protection design, making it a high-quality component choice for high-performance electronic systems.]]></description>
</item>
<item>
	<title><![CDATA[BAS70-04(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bas70-04-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:05:04</pubDate>
	<description><![CDATA[This SOT-23 package Schottky diode has a high reverse voltage rating of 70V and a forward current carrying capacity of 0.07A. Its outstanding low forward voltage drop (VF) is only 1V, ensuring high efficiency and low power consumption performance in small signal processing and power lines. Compact packaging design adapts to modern circuit layout requirements and is suitable for applications that require fast recovery time and low loss, such as switching power supplies, high-frequency rectification, and protection circuits.]]></description>
</item>
<item>
	<title><![CDATA[BAV199(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bav199-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:04:53</pubDate>
	<description><![CDATA[This high-performance switching diode is packaged in SOT-23 and has a high reverse voltage withstand (VR) of 70V and a continuous forward current processing capability of up to 0.5A (IF). It has a superior 1.25V forward conduction voltage drop (VF) under normal operating conditions. The compact design is particularly suitable for modern circuit layout requirements, and this device is suitable for various high-speed switching applications, such as power conversion, load switching, and electronic protection circuits, ensuring high efficiency and long-term stable operation.]]></description>
</item>
<item>
	<title><![CDATA[BAV70(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bav70-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:04:42</pubDate>
	<description><![CDATA[This SOT-23 packaged switching diode has a reverse withstand voltage of up to 70V and a continuous forward current capability of 0.2A, producing only a low forward voltage drop of 1.25V during operation. Suitable for various power conversion and electronic switch applications that require high-speed switching and low loss, with its compact size and excellent electrical performance, it has become an ideal choice for modern circuit design.]]></description>
</item>
<item>
	<title><![CDATA[BAS40-04(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bas40-04-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:04:31</pubDate>
	<description><![CDATA[This SOT-23 package Schottky diode has a high reverse withstand voltage of 40V and a forward current carrying capacity of 0.2A. The forward conduction voltage VF is as low as 1V. Specially designed for efficient and high-speed switching applications, it is widely used in power conversion, high-frequency signal detection, and ESD protection circuits. With its miniaturized packaging and excellent electrical performance, it has become a high-quality choice for modern electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[BAS40-06(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bas40-06-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:04:21</pubDate>
	<description><![CDATA[This SOT-23 package Schottky diode has a 40V high reverse voltage withstand and 0.2A forward current capability, providing a low forward voltage drop of 1V. Specially designed for efficient, high-speed, and low-power applications, widely used in power converters, high-frequency switching circuits, and protection designs, it is an ideal choice for compact electronic devices, ensuring a perfect combination of performance and stability.]]></description>
</item>
<item>
	<title><![CDATA[BAS40-05(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bas40-05-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:04:10</pubDate>
	<description><![CDATA[This SOT-23 package Schottky diode is designed specifically for high efficiency and low loss applications. Equipped with excellent reverse voltage withstand (VR) of 40V and maximum forward current capability of 0.2A (IF), providing excellent 1V forward voltage drop (VF) in forward conduction state. Its compact packaging size is suitable for modern compact circuits, suitable for power conversion, high-frequency switches, ESD protection and other fields, making it the ideal component choice for your high-efficiency electronic system.]]></description>
</item>
<item>
	<title><![CDATA[BAT54S(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bat54s-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:03:59</pubDate>
	<description><![CDATA[This SOT-23 package Schottky diode adopts compact surface mount technology, suitable for circuit design with limited space. The rated reverse voltage of the device is 30V, and it can withstand a maximum forward current of 0.2A. It has excellent 1V forward conduction voltage drop (VF) during operation. This device has fast response speed, low power consumption, and is widely used in high-frequency switching power supplies, low-voltage rectification, signal detection and other fields, making it an ideal choice for high-performance electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BAW56(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/baw56-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:03:48</pubDate>
	<description><![CDATA[This switching diode adopts SOT-23 packaging, with a high reverse voltage of 70V and a forward current carrying capacity of 0.2A. Its forward conduction voltage is as low as 1.25V. Suitable for high-speed switching applications such as power conversion, load switching, etc., with its miniaturized design and excellent electrical performance, it has become a high-quality choice for achieving high efficiency and stability in modern electronic circuits.]]></description>
</item>
<item>
	<title><![CDATA[BAT54(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/bat54-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:03:37</pubDate>
	<description><![CDATA[This Schottky diode is packaged in a small SOT-23 package and has a reverse withstand voltage of 30V and a forward current capacity of 0.2A. Its low positive voltage VF of 1V ensures high efficiency and low loss, making it suitable for low-voltage drop applications in switching power supplies, high-frequency rectifiers, and portable devices.]]></description>
</item>
<item>
	<title><![CDATA[1N5819WS(SOD-323)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/1n5819ws-sod-323-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:03:26</pubDate>
	<description><![CDATA[This SOD-323 package Schottky diode has a 40V reverse withstand voltage and 0.35A forward current, especially its ultra-low 0.32V forward conduction voltage VF, ensuring excellent power conversion efficiency and high-speed switching performance. Suitable for battery protection, high-frequency rectification, and low-voltage drop applications.]]></description>
</item>
<item>
	<title><![CDATA[F7(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/f7-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:03:15</pubDate>
	<description><![CDATA[Product Category: Diode     Packing: SOD-123FL      Parameter Introduction:Current/A: 1, voltage/V: 1000, voltage drop/V: 1.3, reverse current/uA: 5, surge current/A: 30,     (Ordering Information):  Product Code: H102489     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[M7F(SMAF)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/m7f-smaf-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:03:04</pubDate>
	<description><![CDATA[This SMAF packaged general-purpose diode has a reverse withstand voltage of up to 1000V and a stable 1A forward current carrying capacity. Its positive conduction voltage VF is 1V, providing excellent overvoltage protection function while ensuring high efficiency. Widely used in various power conversion, rectification, and high-voltage circuit protection scenarios.]]></description>
</item>
<item>
	<title><![CDATA[M7(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/diode/">Diode</category>
	<link><![CDATA[http://www.hxymos.com/en/diode/m7-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-02 02:02:53</pubDate>
	<description><![CDATA[This SMA packaged universal diode has excellent 1000V reverse withstand voltage and stable 1A forward current processing ability. Its forward conduction voltage VF is only 1V, providing excellent overvoltage protection performance while ensuring high efficiency. Suitable for various power conversion, rectification circuits, and high-voltage protection applications.]]></description>
</item>
<item>
	<title><![CDATA[HXY16N65F(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy16n65f-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:31:02</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-220F      Parameter Introduction:Current/A: 16, Voltage/V: 650, Internal Resistance Typ/mR: 450, VGS: 30, Type: N,     (Ordering Information):  Product Code: H104353     Minimum packaging: 50pcs      Gross weight/gram :2.436g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY12N65F(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy12n65f-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:30:48</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET is packaged in TO-220F, with a rated voltage of up to 650V and a continuous current carrying capacity of 12A. It is designed specifically for high-power electronic devices and is suitable for power conversion, motor drive, and other scenarios, providing powerful, stable, and efficient switch control performance.]]></description>
</item>
<item>
	<title><![CDATA[HXY5N50D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy5n50d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:30:34</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-252-2L packaging, with high voltage resistance of up to 500V and stable 5A current processing capability. Suitable for various high-voltage switch applications, consumer electronics products ensure excellent power conversion efficiency, low loss, and system stability performance.]]></description>
</item>
<item>
	<title><![CDATA[HXY4N65F(TO-220F)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4n65f-to-220f-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:30:20</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-220F      Parameter Introduction:Current/A: 4, Voltage/V: 650, Internal Resistance Typ/mR: 2400, VGS: 30, Type: N,     (Ordering Information):  Product Code: H104331     Minimum packaging: 50pcs      Gross weight/gram :2.436g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY2N65D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy2n65d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:30:06</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET is packaged in TO-252-2L and has a high voltage withstand value of 650V and a current carrying capacity of 2A. Suitable for switch applications in high voltage environments, providing excellent energy efficiency and stability, it is an ideal semiconductor device choice for optimizing power systems and improving equipment performance.]]></description>
</item>
<item>
	<title><![CDATA[8205A(TSSOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/8205a-tssop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:29:53</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts TSSOP-8 packaging, integrates dual N-channel design, has a rated voltage of 20V, and can withstand 6A continuous current. Specially designed for compact, high-efficiency power switches and conversion applications, suitable for various consumer electronics products, providing excellent system performance and stability.]]></description>
</item>
<item>
	<title><![CDATA[HXY8205ES(TSSOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy8205es-tssop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:29:39</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts a compact TSSOP-8 package, which includes a dual N-channel design and operates at a voltage of up to 20V, supporting 6A continuous current. Specially designed for miniaturization, low-power power conversion, and switch applications, it is an ideal choice for consumer electronics products, effectively improving system energy efficiency and stability.]]></description>
</item>
<item>
	<title><![CDATA[HXY6020GD(TO-252-4L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy6020gd-to-252-4l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:29:10</pubDate>
	<description><![CDATA[This consumer grade N+P channel MOSFET adopts a TO-252-4L package, with a high voltage resistance of 60V and strong 20A current processing ability. Specially designed for medium and high voltage bipolar power conversion applications, widely used in various consumer electronics products, achieving efficient and low loss circuit control and optimization.]]></description>
</item>
<item>
	<title><![CDATA[HXY4012GD(TO-252-4L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4012gd-to-252-4l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:28:43</pubDate>
	<description><![CDATA[This consumer grade N+P channel MOSFET is packaged in TO-252-4L, with a rated voltage of 40V, providing efficient and stable 20A current processing capability. Specially designed for bipolar power conversion in medium and low voltage environments, widely used in various consumer electronics products, achieving excellent energy efficiency and system stability.]]></description>
</item>
<item>
	<title><![CDATA[HXY3012GD(TO-252-4L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3012gd-to-252-4l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:28:15</pubDate>
	<description><![CDATA[This consumer grade N+P channel MOSFET adopts TO-252-4L packaging, with 30V working voltage and stable 20A current processing performance. Specially designed to achieve efficient bipolar power switching and control, suitable for various low-voltage consumer electronics products, it is an ideal semiconductor component for improving system energy efficiency and reliability.]]></description>
</item>
<item>
	<title><![CDATA[HD6955(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6955-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:27:19</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts TO-252-2L packaging, with a high operating voltage of 60V and a stable current carrying capacity of 20A. Specially designed for consumer electronics products in medium and high voltage environments, achieving excellent power conversion efficiency and system stability, it is an ideal semiconductor component choice for optimizing circuit performance.]]></description>
</item>
<item>
	<title><![CDATA[HXY10P06D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy10p06d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:26:23</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: TO-252-2L      Parameter Introduction:Current/A: 10, voltage/V: 60, internal resistance Typ/mR: 125, VGS: 20, type: P,     (Ordering Information):  Product Code: H104527     Minimum packaging: 2500pcs      Gross weight/gram :0.383g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[AOD4185(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod4185-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:26:09</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts TO-252-2L packaging, with a rated voltage of 40V and strong 40A current processing capability. Specially designed for medium and low voltage, high current application scenarios, suitable for various consumer electronics products, achieving excellent power conversion efficiency and system stability, it is an ideal semiconductor component choice for optimizing circuit performance.]]></description>
</item>
<item>
	<title><![CDATA[AOD413A(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aod413a-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:25:41</pubDate>
	<description><![CDATA[This field-effect transistor has a current carrying capacity of 25A and can withstand a maximum voltage of 40V. Its typical internal resistance value is 31m Ω, suitable for low resistance applications. VGS is 20V, P-type, suitable for various application scenarios, ensuring efficient and stable performance. Choose it to provide a reliable electronic switch solution for your electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY25P04D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy25p04d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:25:27</pubDate>
	<description><![CDATA[This field-effect transistor has a current carrying capacity of 25A, supports a maximum voltage of 40V, and a typical internal resistance value of 31mR. Its VGS is 20V, belonging to P-type field-effect transistor. Suitable for various application scenarios, such as power management, signal amplification, etc., to ensure stable system operation. Low internal resistance gives it high-performance characteristics.]]></description>
</item>
<item>
	<title><![CDATA[HXY70P03D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy70p03d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:24:59</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts TO-252-2L packaging, with a working voltage of 30V and a high current processing capacity of up to 70A. Specially designed for high-performance, high load consumer electronics products, achieving excellent switching efficiency and stability, it is an ideal semiconductor device choice for optimizing power management in low-voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[HXY40P03D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy40p03d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:24:31</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts TO-252-2L packaging, with a rated voltage of 30V and a strong 40A current carrying capacity. Specially designed for high-performance and high-efficiency low-voltage switch applications, suitable for various consumer electronics products, providing excellent power conversion efficiency and system stability performance.]]></description>
</item>
<item>
	<title><![CDATA[HD7258(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd7258-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:24:17</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET is packaged in TO-252-2L, with a rated voltage of 100V and a peak current of up to 30A. It is designed specifically for high-power electronic devices and is used in power conversion, motor drive, and other applications, providing powerful and efficient switch control and excellent power management functions.]]></description>
</item>
<item>
	<title><![CDATA[HXY30N10D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy30n10d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:24:03</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-252-2L packaging, with 100V high voltage resistance and 30A high current processing capacity. It is designed specifically for high-efficiency power conversion, motor drive and other applications, providing low loss and fast response switch control functions to meet the needs of high-power electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HD7256(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd7256-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:23:49</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-252-2L packaging, with a rated voltage of 100V and a peak current of up to 20A. It is suitable for power conversion, motor drive and other applications of high-power electronic devices, providing efficient and low loss switch control solutions.]]></description>
</item>
<item>
	<title><![CDATA[HXY20N10D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy20n10d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:22:54</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET is packaged in TO-252-2L, with a rated voltage of 100V and a peak current of 20A. It is suitable for applications such as power conversion and motor drive in high-power electronic devices, providing efficient and low loss switching control functions.]]></description>
</item>
<item>
	<title><![CDATA[HXY80N06D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy80n06d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:21:58</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts an efficient packaging TO-252-2L, with a rated voltage of 60V and a strong continuous current carrying capacity of 80A. Specially designed for high-performance consumer electronics products with excellent switching efficiency and reliability, it is an ideal semiconductor device choice for optimizing power conversion and improving system energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[HD6956(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6956-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:21:30</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts advanced TO-252-2L packaging, with a maximum withstand voltage of 60V and a continuous current capacity of up to 50A. Specially designed for various mid to high end consumer electronics products, it can significantly improve the efficiency of switch circuits and ensure stable system operation. It is your ideal choice for optimizing power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[HXY50N06D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy50n06d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:21:02</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET is packaged in TO-252-2L, with a rated voltage of 60V and a peak current of up to 50A. Specially designed to improve power conversion efficiency and switch performance, suitable for various electronic devices, achieving efficient and stable operation with strong current carrying capacity and excellent energy efficiency performance.]]></description>
</item>
<item>
	<title><![CDATA[HXY30N06D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy30n06d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:20:06</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts TO-252-2L packaging technology and is a powerful N-channel semiconductor device with a rated voltage of 60V and a peak current of 30A, designed specifically to optimize power conversion efficiency and switching performance. Its outstanding energy efficiency and stability are widely used in various high demand electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY60N04BD(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy60n04bd-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:19:38</pubDate>
	<description><![CDATA[Our HXY60N04BD is a high-performance MOSFET that can be used as a FDD6635 onsemi An ideal alternative to It has the characteristics of low conduction resistance, high-speed switching characteristics, and good thermal stability]]></description>
</item>
<item>
	<title><![CDATA[HD6362(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hd6362-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:18:56</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET is packaged in TO-252-2L, with a rated voltage of 30V and a peak current of up to 100A. It is designed specifically for high current, high-efficiency power conversion, and motor drive applications, providing excellent switching performance and low loss characteristics. It is an ideal component for high-performance consumer grade electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY100N03D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy100n03d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:18:28</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-252-2L packaging, with a rated voltage of 30V and a peak current of up to 100A. It is designed specifically for high-power applications such as power conversion and high current motor drive, providing low loss and efficient switching control performance.]]></description>
</item>
<item>
	<title><![CDATA[HXY60N03D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy60n03d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:18:00</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET is packaged in TO-252-2L, with a rated voltage of 30V and a high current processing capacity of 60A. It is designed specifically for high-power, high-efficiency power conversion and motor drive applications, providing excellent switching performance and low loss characteristics.]]></description>
</item>
<item>
	<title><![CDATA[HXY20N03D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy20n03d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:17:32</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts advanced TO-252-2L packaging and is a high-performance N-channel device with a rated voltage of up to 30V and a continuous current capacity of 20A. It is suitable for various medium and low voltage switching circuits and provides efficient and stable power management solutions for electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HXY60N02D(TO-252-2L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy60n02d-to-252-2l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:17:04</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts TO-252-2L packaging, with a rated voltage of 20V and a continuous current carrying capacity of up to 60A. It is designed specifically for high current applications such as power conversion and high-power motor drive, providing efficient and low impedance switching control solutions.]]></description>
</item>
<item>
	<title><![CDATA[HXY1012CI(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy1012ci-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:16:36</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts an ultra small SOT-523 package, with a rated voltage of 20V and a maximum continuous current of 0.8A. Specially designed for compact electronic devices, it provides excellent power management and efficient switching functions, making it an ideal choice for low-power applications.]]></description>
</item>
<item>
	<title><![CDATA[HXY3134CI(SOT-523)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3134ci-sot-523-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:16:22</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a miniature SOT-523 package, with a rated voltage of 20V and a maximum continuous current of 0.8A, designed specifically for low-power electronic devices. Its excellent switching performance combined with compact size is suitable for high integration power management and fine control applications.]]></description>
</item>
<item>
	<title><![CDATA[HXY6800LI(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy6800li-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:15:54</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts SOT-23-6L packaging, integrates dual N-channel design, has a rated voltage of 30V, and a continuous current of up to 4.5A, suitable for various power management and efficient switching applications. Its compact structure and excellent performance provide an ideal dual channel power control solution for electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY8205LI(SOT-23-6L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy8205li-sot-23-6l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:15:26</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts SOT-23-6L packaging, integrates dual N-channel design, has a rated voltage of 20V, and a maximum continuous current of up to 6A, making it particularly suitable for high-efficiency power switching and electronic device management applications. Its compact structure combined with excellent performance provides a dual channel, low loss power control scheme for the circuit.]]></description>
</item>
<item>
	<title><![CDATA[HXY3407MI(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3407mi-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:15:12</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts SOT-23-3L packaging, equipped with P-channel technology, with a rated voltage of 30V and a continuous current of up to 4.1A, suitable for various power management and electronic device switching applications. With its compact size and efficient performance, it can achieve high stability and low loss circuit design.]]></description>
</item>
<item>
	<title><![CDATA[HXY3415MI(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3415mi-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:14:59</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts a small SOT-23-3L package, built-in P-channel technology, working voltage of 20V, maximum continuous current of 4.1A, suitable for power management and efficient switching applications of various electronic devices. With its compact size and excellent performance, it effectively improves system efficiency and ensures stable operation.]]></description>
</item>
<item>
	<title><![CDATA[HXY5N10MI(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy5n10mi-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:14:45</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23-3L packaging and is designed specifically for 100V voltage systems, providing 5A high current carrying capacity. It has excellent low conduction resistance and fast switching characteristics, suitable for scenarios such as chargers and power conversion, achieving efficient and stable power control functions.]]></description>
</item>
<item>
	<title><![CDATA[HXY3422MI(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3422mi-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:14:17</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts SOT-23-3L packaging, with N-channel characteristics, supporting up to 60V operating voltage and 4.5A continuous current, especially suitable for high-efficiency power conversion and electronic device switch control. Its compact appearance combined with excellent performance]]></description>
</item>
<item>
	<title><![CDATA[HXY3400MI(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3400mi-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:14:03</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET is packaged in SOT-23-3L and is suitable for 30V voltage systems with a rated current of up to 5.8A. Equipped with low conduction resistance and fast switching performance, it is widely used in fields such as chargers and power converters, providing efficient and stable power control solutions for electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY3416MI(SOT-23-3L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3416mi-sot-23-3l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:13:35</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23-3L packaging, designed specifically for 20V voltage systems, providing up to 6.5A continuous current processing capability. Equipped with low conduction resistance and fast switching performance, it is widely used in scenarios such as chargers and power converters to achieve efficient and stable power control requirements.]]></description>
</item>
<item>
	<title><![CDATA[SI2309A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2309a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:13:21</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging and is designed specifically for 60V voltage systems with a rated current of 1.6A. It has low conduction resistance and fast switching performance, suitable for applications such as chargers and power converters, providing efficient and stable power control solutions.]]></description>
</item>
<item>
	<title><![CDATA[HXY2309I(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy2309i-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:12:25</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging and is designed specifically for 60V voltage systems, providing up to 2A current processing capability. Equipped with low conduction resistance and fast switching performance, it is widely used in fields such as chargers and power converters to ensure efficient and stable power control performance of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY3401BI(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3401bi-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:11:01</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 4.2, Voltage/V: 30, Internal Resistance Typ/mR: 48, VGS: 12, Type: P,     (Ordering Information):  Product Code: H104200     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY3401AI(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3401ai-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:09:51</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging and is designed specifically for 30V systems, with a 4.2A high current processing capacity. It has low conduction resistance and fast switching characteristics, and is widely used in devices such as chargers and power converters to achieve efficient and reliable power control and switching functions.]]></description>
</item>
<item>
	<title><![CDATA[HXY3407AI(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3407ai-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:09:23</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a compact SOT-23 package, designed specifically for 30V voltage systems, with a rated current of 4.1A. Equipped with low conduction resistance and fast switching characteristics, it is widely used in chargers, power converters, and various electronic devices to achieve efficient and reliable power control and switching functions.]]></description>
</item>
<item>
	<title><![CDATA[AO3401-ED(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3401-ed-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:09:09</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging, with a rated voltage of 20V and can withstand 3A current. Featuring low conduction resistance and fast switching characteristics, it is suitable for applications such as chargers and power converters, providing efficient, stable, and reliable power control solutions, making it an ideal choice for various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY2333AI(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy2333ai-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:08:27</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a compact SOT-23 package, designed specifically for 20V voltage systems, providing up to 7A of high current processing capacity. It has low on resistance and fast switching performance, and is widely used in scenarios such as chargers and power management to achieve efficient and stable power conversion and control.]]></description>
</item>
<item>
	<title><![CDATA[SI2323(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2323-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:08:13</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging, suitable for 20V voltage systems, and has 5A high current processing capacity. With its low conduction resistance and fast switching performance, it is widely used in fields such as chargers and power converters, providing efficient and stable power control solutions for electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[IRLML6401(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml6401-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:07:45</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging and is designed specifically for 20V voltage systems, providing up to 5A continuous current processing capability. Equipped with low conduction resistance and fast switching performance, suitable for efficient power control and switching needs in chargers, power converters, and various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY2305AI(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy2305ai-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:07:03</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging and is designed specifically for 20V systems, providing 5A high current processing capability. Featuring low conduction resistance and fast switching characteristics, it is widely used in chargers, power converters, and various electronic devices to achieve efficient, stable, and reliable power control.]]></description>
</item>
<item>
	<title><![CDATA[HXY2301AI(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy2301ai-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:06:22</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a small SOT-23 package, designed specifically for 20V voltage systems, with a rated current of 3A. Featuring excellent low conduction resistance and fast switching characteristics, it is widely used in charging equipment, power conversion, and other applications, providing efficient and reliable power control solutions.]]></description>
</item>
<item>
	<title><![CDATA[SI2301-ZE(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2301-ze-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:06:08</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a compact SOT-23 package, designed specifically for 20V voltage systems, with a rated current of 2.3A. Equipped with low conduction resistance and fast switching performance, it is widely used in chargers, power management, and various electronic devices, providing efficient and accurate power control solutions.]]></description>
</item>
<item>
	<title><![CDATA[HXY2301I-B(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy2301i-b-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:05:54</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 2.3, Voltage/V: 20, Internal Resistance Typ/mR: 120, VGS: 12, Type: P,     (Ordering Information):  Product Code: H104151     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[BSS131(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss131-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:05:40</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a small SOT-23 package, which is particularly suitable for 240V high-voltage environments and provides precise 0.1A current control. Having excellent switching characteristics and high voltage resistance, it is widely used in battery protection, signal switching, and various low-power electronic devices to achieve efficient and safe power management solutions.]]></description>
</item>
<item>
	<title><![CDATA[HXY5N10AI(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy5n10ai-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:05:12</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a miniaturized SOT-23 package, designed specifically for 100V high-voltage applications, with 5A high current processing capability. With excellent low conduction resistance and fast switching performance, it is widely used in charging equipment, power conversion, and various high-power electronic systems to achieve efficient and reliable power management and control.]]></description>
</item>
<item>
	<title><![CDATA[HXY3N10AI(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3n10ai-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:04:30</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a miniaturized SOT-23 package, suitable for 100V voltage systems, with a rated current of up to 3A. Specially designed for applications such as battery management and signal switching, it has excellent low on resistance and fast switching performance, making it an ideal high-performance semiconductor power switch component in modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY2310AI(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy2310ai-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:03:20</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 packaging and is designed specifically for 60V voltage applications, with a rated current of up to 3A. Featuring excellent low conduction resistance and fast switching performance, it is widely used in scenarios such as chargers and power management, providing efficient and stable power conversion and control solutions.]]></description>
</item>
<item>
	<title><![CDATA[BSS138(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/bss138-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:02:24</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 packaging and is suitable for 50V voltage systems with a rated current of 0.2A. It has excellent low conduction resistance and fast switching performance, and is widely used in low-power scenarios such as battery protection and signal switching, providing efficient and accurate power control solutions.]]></description>
</item>
<item>
	<title><![CDATA[HXY2318AI(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy2318ai-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:01:56</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOT-23      Parameter Introduction:Current/A: 5, Voltage/V: 40, Internal Resistance Typ/mR: 30, VGS: 20, Type: N,     (Ordering Information):  Product Code: H104114     Minimum packaging: 3000pcs      Gross weight/gram :0.031g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HXY3400AI(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3400ai-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:01:14</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 packaging and is designed specifically for 30V systems, with a high current carrying capacity of 5.8A. With its low conduction resistance and fast switching performance, it is widely used in charging equipment, power conversion and other fields to achieve efficient and stable power control, making it an ideal choice for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY2300AI(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy2300ai-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 12:00:04</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a compact SOT-23 package and is designed for a 20V voltage system, providing up to 6A continuous current processing capability. It has excellent low conduction resistance and fast switching performance, and is widely used in charging equipment, power management, and various high-efficiency electronic applications to achieve efficient and stable power conversion and control.]]></description>
</item>
<item>
	<title><![CDATA[AO3400-ED(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3400-ed-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:59:50</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a small SOT-23 package, designed specifically for 20V voltage systems, with a rated current of up to 3A. Equipped with low conduction resistance and fast switching characteristics, it is widely used in chargers, power management, load switching of various electronic devices, and efficient power control scenarios.]]></description>
</item>
<item>
	<title><![CDATA[HXY2302AI(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy2302ai-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:59:37</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 packaging and is designed specifically for 20V voltage systems, with a rated current of up to 3A. Featuring excellent low conduction resistance and fast switching characteristics, it is widely used in chargers, power management, and various electronic devices, providing efficient, stable, and reliable power conversion and control functions.]]></description>
</item>
<item>
	<title><![CDATA[HXY4266S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4266s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:58:27</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOP-8 packaging, with a rated voltage of 60V and a continuous current of up to 10A. Specially designed for medium to high voltage applications, suitable for power conversion, load switching, and battery management systems, achieving excellent energy efficiency and reliability in a compact size to meet the high-performance requirements of modern electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HXY4480S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4480s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:58:13</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOP-8 packaging, with a rated voltage of 40V and a continuous current of up to 14A. Specially designed for medium power applications, suitable for power conversion, load switch control, and battery management systems, providing compact size and excellent performance to meet the efficient and energy-saving needs of modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY4430S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4430s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:57:45</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOP-8 packaging, with a rated voltage of 30V and a continuous current of up to 18A. Specially designed for efficient power conversion, load switching, and battery management systems, with excellent heat dissipation performance and small size advantages, it is an ideal power management component for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HS6334(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hs6334-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:57:31</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOP-8 packaging, with a rated voltage of 30V and a continuous current of up to 15A. Suitable for medium power power conversion, load control, and battery management system applications, it has excellent energy efficiency and space utilization, providing efficient and reliable semiconductor solutions for modern electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HXY4410S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4410s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:57:03</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOP-8 packaging, with a rated voltage of 30V and a continuous current of up to 15A. Specially designed for medium power applications such as power conversion, load switch control, and battery management systems, with high efficiency and compact size, it is an ideal integrated component for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY4402S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4402s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:56:21</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOP-8 packaging, with a rated voltage of 20V and a continuous current of up to 20A. Specially designed for medium power electronic devices, applied in power conversion, load switch control, and battery management systems, with high integration and excellent energy efficiency performance, achieving compact and powerful semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[HXY4828S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4828s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:55:39</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts SOP-8 packaging, integrates dual N-channel technology, has a rated voltage of 60V, and a continuous current of up to 6.5A. Specially designed for efficient power conversion and battery management systems, it has excellent low conduction resistance and fast switching performance, ensuring stable and reliable operation in high voltage applications. It is an ideal choice for modern electronic products to save energy and achieve high efficiency.]]></description>
</item>
<item>
	<title><![CDATA[HXY4884S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4884s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:55:11</pubDate>
	<description><![CDATA[This consumer grade MOSFET adopts a compact SOP-8 package with built-in dual N-channel design, rated voltage of 40V, and can carry up to 12A continuous current. Specially designed for efficient power conversion, motor drive and other applications, it has excellent low on resistance and fast switching performance, making it an ideal semiconductor device choice for optimizing system energy efficiency and improving equipment operation performance.]]></description>
</item>
<item>
	<title><![CDATA[HS2290(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hs2290-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:54:57</pubDate>
	<description><![CDATA[This high-performance consumer grade MOSFET is packaged in SOP-8 and features a dual N-channel design, specifically designed for handling high current applications. Rated voltage of 40V, continuous current of up to 12A, suitable for power conversion, motor drive and other occasions. With its excellent low conduction resistance and high-speed switching performance, it effectively improves system efficiency and ensures stable operation.]]></description>
</item>
<item>
	<title><![CDATA[HXY4882S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4882s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:54:29</pubDate>
	<description><![CDATA[High performance N+N channel MOSFETs are designed for the consumer market using SOP-8 packaging technology. Equipped with 40V high voltage resistance and continuous current processing capacity of up to 12A, it is particularly suitable for high-efficiency power conversion, motor drive and other applications. This device has excellent low on resistance and fast switching performance as its core advantages, making it an ideal choice for optimizing system energy consumption and improving equipment performance.]]></description>
</item>
<item>
	<title><![CDATA[HXY4842S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4842s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:54:01</pubDate>
	<description><![CDATA[This high-performance consumer grade MOSFET adopts SOP-8 packaging and is equipped with dual N-channel technology. The rated voltage is 30V and the peak current can reach 8.5A. Suitable for various efficient power conversion scenarios, such as switching and power control of charging devices, smart home appliances, and consumer electronics. Having low on resistance and high-speed switching performance]]></description>
</item>
<item>
	<title><![CDATA[HXY4822S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4822s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:53:33</pubDate>
	<description><![CDATA[Excellent consumer grade dual N-channel MOSFET, designed for efficient power conversion using SOP-8 packaging. With a withstand voltage of 30V and a continuous current of up to 8.5A, it is suitable for applications such as chargers, LED lighting, and energy-saving control of household appliances. Its excellent switching characteristics and low conduction resistance ensure superior system performance and significant energy-saving effects, making it an ideal power management component for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY4812S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4812s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:53:05</pubDate>
	<description><![CDATA[This consumer grade N+N channel MOSFET adopts SOP-8 packaging, integrated dual channel design, rated voltage of 30V, and continuous current of 6A. Specially designed for efficient power conversion, load balancing, and battery management systems in modern electronic devices, providing compact and energy-saving semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[HXY9926S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy9926s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:52:37</pubDate>
	<description><![CDATA[This consumer grade N+N channel MOSFET adopts SOP-8 packaging, integrates dual channel technology, has a rated voltage of 20V, and a continuous current of 6A. Specially designed for miniaturization, high-efficiency power conversion, and load management, suitable for battery management systems and multi-channel control applications, providing energy-saving and compact semiconductor solutions.]]></description>
</item>
<item>
	<title><![CDATA[HXY4612S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4612s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:52:10</pubDate>
	<description><![CDATA[This consumer grade N+P channel MOSFET features a compact SOP-8 package designed specifically for 60V voltage environments with a rated current of 5A. Suitable for applications such as battery management systems and AC/DC converters, with bipolar switching function to achieve positive and negative voltage control. The low on resistance and excellent switching performance ensure stable performance in high-efficiency power conversion.]]></description>
</item>
<item>
	<title><![CDATA[HXY4559S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4559s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:51:42</pubDate>
	<description><![CDATA[This consumer grade N+P channel MOSFET is packaged in SOP-8 and is suitable for 60V voltage systems with a rated current of 6A. The dual channel design realizes positive and negative voltage control, which is applied in fields such as battery management and power conversion. It has low conduction resistance and efficient switching performance, making it an indispensable high cost-effective bidirectional power switching component in electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HS2198(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hs2198-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:51:28</pubDate>
	<description><![CDATA[This consumer grade N+P channel MOSFET is packaged in SOP-8 and has a rated voltage of 40V and a high continuous current processing capacity of 7.2A. Specially designed for efficient bidirectional power conversion and battery management systems, suitable for a variety of consumer electronics products. Integrated bipolar channels achieve positive and negative voltage control, combined with low on resistance and excellent switching performance, ensuring system stability, reliability, and energy efficiency.]]></description>
</item>
<item>
	<title><![CDATA[HXY4606S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4606s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:50:46</pubDate>
	<description><![CDATA[This consumer grade N+P channel MOSFET is packaged in SOP-8 and designed for efficient bidirectional power control. Rated voltage of 30V, maximum continuous current of 6A, suitable for battery management systems, AC/DC conversion, and various consumer electronics products. Integrated bipolar channels provide superior switching characteristics and low conduction resistance, ensuring stable operation under positive and negative voltages, improving system efficiency and energy-saving performance.]]></description>
</item>
<item>
	<title><![CDATA[AO4485(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao4485-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:50:18</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a compact SOP-8 package, with a rated voltage of 40V and powerful 13A continuous current processing capability. Specially designed for high-power applications, with low conduction resistance and excellent switching performance, it is widely used in battery management systems, power converters, and various high-efficiency electronic devices to achieve excellent power control and energy efficiency management.]]></description>
</item>
<item>
	<title><![CDATA[HS6339(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hs6339-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:50:04</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a small SOP-8 package, designed specifically for 30V systems, providing up to 12A continuous current processing capability. Having excellent switching performance and low conduction resistance, it is widely used in battery protection, power switching, and high-power load control scenarios, making it an ideal choice for modern electronic products to achieve efficient and stable operation.]]></description>
</item>
<item>
	<title><![CDATA[IRF7416T(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irf7416t-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:49:08</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOP-8 packaging, with a rated voltage of 30V and a maximum continuous current of 9A. Suitable for battery protection, power management, and efficient load switching applications, it has excellent low on resistance and fast switching characteristics, making it an ideal power control component for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[FDS4435BZ(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/fds4435bz-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:48:54</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOP-8 packaging, with a rated voltage of 30V and a maximum continuous current of 9A. Suitable for battery management systems, power switching, and high-power applications, with excellent switching performance and low on resistance, ensuring high efficiency and stability, it is an ideal choice for optimizing electronic device power consumption.]]></description>
</item>
<item>
	<title><![CDATA[HXY4435S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4435s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:48:26</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a compact SOP-8 package, designed specifically for 30V voltage applications, providing a continuous current carrying capacity of up to 9A. It has excellent low conduction resistance and fast switching characteristics, widely used in battery protection, power management, and high-power load switching, ensuring efficient and stable operation of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY9435S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy9435s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:47:44</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOP-8 packaging, which is particularly suitable for low-level driving applications in 30V voltage environments. Rated current of 5A, with excellent switching performance and low conduction resistance, suitable for scenarios such as battery protection, load switching, and power management. Compact size and efficient design provide stable and reliable power control solutions for electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY4805AS(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4805as-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:47:30</pubDate>
	<description><![CDATA[Product Category: MOSFET     Packing: SOP-8      Parameter Introduction:Current/A: 11, Voltage/V: 30, Internal Resistance Typ/mR: 14, VGS: 20, Type: P+P,     (Ordering Information):  Product Code: H104035     Minimum packaging: 3000pcs      Gross weight/gram :0.13g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[HS1195(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hs1195-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:47:16</pubDate>
	<description><![CDATA[This consumer grade P+P channel MOSFET adopts SOP-8 packaging and is designed specifically for 30V systems, with a dual P channel structure to achieve efficient forward conduction. With a rated current of up to 8.5A, it is suitable for applications such as battery protection and power switching. With its excellent low conduction resistance and fast switching performance, it has become an ideal high-power control component for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY4805S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4805s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:46:48</pubDate>
	<description><![CDATA[This consumer grade P+P channel MOSFET adopts SOP-8 packaging, designed specifically for 30V voltage applications, providing dual channel efficient conduction with a rated current of up to 8.5A. Suitable for scenarios such as battery management systems, power conversion, and load control, with its low on resistance and fast switching characteristics, it ensures excellent bidirectional power management efficiency in various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY4953S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4953s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:46:20</pubDate>
	<description><![CDATA[This consumer grade P+P channel MOSFET adopts SOP-8 packaging, specifically designed for 30V voltage systems, with 5.3A continuous current processing capability. The dual P channel configuration ensures efficient forward conduction, suitable for applications such as battery protection and load switching. It has low conduction resistance and fast switching characteristics, providing reliable and efficient power management solutions for electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY150N03NF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy150n03nf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:45:39</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts DFN5X6-8L packaging, with a rated voltage of 30V and a continuous current carrying capacity of up to 150A. Specially designed for efficient power conversion, high current load control, and battery management systems, providing excellent power density and heat dissipation performance to meet the miniaturization and high-performance requirements of modern electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HXY120N03NF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy120n03nf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:45:11</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET is packaged in DFN5X6-8L and has a rated voltage of 30V, providing up to 120A of continuous current processing capability. Specially designed for high power density applications such as power conversion, motor drive, and battery management systems, achieving excellent heat dissipation performance and high efficiency.]]></description>
</item>
<item>
	<title><![CDATA[HXY80N03NF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy80n03nf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:44:43</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts DFN5X6-8L packaging, with a rated voltage of 30V and a continuous current of up to 80A. Specially designed for high-performance power conversion, motor drive, and battery management systems, with excellent power processing capabilities and compact size, it is an ideal choice for modern high-density electronic applications.]]></description>
</item>
<item>
	<title><![CDATA[HXY50N04NF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy50n04nf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:44:01</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET is packaged in DFN5X6-8L, with a rated voltage of 40V and a continuous current of up to 50A. Suitable for high-efficiency power conversion, motor drive, and battery management systems, it has excellent heat dissipation performance and compact size, making it an ideal miniaturization and high-performance solution for modern electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HN6976(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hn6976-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:43:47</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET is packaged in DFN5X6-8L and has a rated voltage of 60V and continuous current processing capacity of 30A. Specially designed for efficient power conversion, motor control, and battery management systems, it has excellent thermal performance and power density, making it an ideal choice for modern compact electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY30N06NF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy30n06nf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:43:19</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts DFN5X6-8L packaging, with a rated voltage of 60V and a continuous current of 30A. Suitable for power conversion, motor drive, and battery management systems, providing efficient and compact design, it is an ideal semiconductor device choice for modern electronic devices to achieve high power density.]]></description>
</item>
<item>
	<title><![CDATA[HN2199(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hn2199-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:43:05</pubDate>
	<description><![CDATA[This consumer grade N+P channel MOSFET adopts DFN5X6-8L packaging, integrated dual channel design, rated voltage of 40V, and continuous current of up to 30A. Specially designed for efficient power conversion, load switching, and battery management systems, achieving high integration and excellent energy efficiency, meeting the miniaturization needs of modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY4020NF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4020nf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:42:51</pubDate>
	<description><![CDATA[This consumer grade N+P channel MOSFET adopts DFN5X6-8L packaging, integrates dual channel technology, has a rated voltage of 40V, and a continuous current of 30A. Specially designed for efficient power conversion, load control, and battery management systems, providing compact solutions to achieve excellent energy efficiency and space savings.]]></description>
</item>
<item>
	<title><![CDATA[HXY50P03NF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy50p03nf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:42:09</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET is packaged in DFN5X6-8L and has a rated voltage of 30V and a continuous current capacity of 50A. Specially designed for efficient power conversion, load switching, and battery management systems, it achieves excellent power processing performance in a compact size, meeting the energy efficiency and space utilization requirements of modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY100P03NF(DFN5X6-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy100p03nf-dfn5x6-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:41:55</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts DFN5X6-8L packaging, with a rated voltage of 30V and a continuous current of up to 100A. Specially designed for efficient power conversion, high current load switching, and battery management systems, it has excellent heat dissipation performance and power density, meeting the high-performance requirements of modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HN6971(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hn6971-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:41:41</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts DFN3X3-8L packaging, with a rated voltage of 60V and continuous current processing capacity of 20A. Specially designed for compact, efficient power conversion, load switch control, and battery management systems, achieving excellent space utilization and energy efficiency performance.]]></description>
</item>
<item>
	<title><![CDATA[HXY20P06DF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy20p06df-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:41:16</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts DFN3X3-8L packaging, with a rated voltage of 60V and a continuous current of up to 20A. Specially designed for modern compact electronic devices, suitable for power conversion, load switch control, and battery management systems, providing excellent energy efficiency and space utilization.]]></description>
</item>
<item>
	<title><![CDATA[AONR21357(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aonr21357-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:41:05</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a miniature DFN3X3-8L package, with a rated voltage of 30V and a continuous current of up to 50A. Specially designed for high power density applications, suitable for power conversion, load switching, and battery management systems, providing excellent energy efficiency and compact layout solutions to meet the high-performance requirements of modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HN6373(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hn6373-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:40:51</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts an ultra small DFN3X3-8L package, with a rated voltage of 30V and a continuous current processing capacity of up to 50A. Specially designed for compact, high-power applications such as power conversion, load switching, and battery management systems, achieving excellent energy efficiency and space utilization.]]></description>
</item>
<item>
	<title><![CDATA[HXY50P03DF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy50p03df-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:40:37</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a compact DFN3X3-8L package, with a rated voltage of 30V and a continuous current processing capacity of up to 50A. Specially designed for high power density applications, widely used in power conversion, load switch control, and battery management systems, achieving excellent energy efficiency and space savings.]]></description>
</item>
<item>
	<title><![CDATA[HXY3419DF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy3419df-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:40:09</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a compact DFN3X3-8L package, with a rated voltage of 30V and a maximum continuous current of 32A. Specially designed for high-efficiency, small-sized power conversion, load switch, and battery management systems, it has excellent thermal performance and low conductivity resistance, achieving the miniaturization and energy-saving requirements of modern electronic products.]]></description>
</item>
<item>
	<title><![CDATA[HXY30P02DF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy30p02df-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:39:41</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts an ultra small DFN3X3-8L package, with a rated voltage of 20V and a continuous current of up to 30A. Specially designed for efficient and compact power conversion, load switch control, and battery management systems, it provides low conduction resistance and excellent thermal performance to meet the miniaturization needs of modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HN2194(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hn2194-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:39:28</pubDate>
	<description><![CDATA[This consumer grade N+P channel MOSFET adopts DFN3X3-8L packaging, integrates dual channel drivers, has a rated voltage of 30V, and a continuous current of 16A. Specially designed for efficient and limited space power conversion, load control, and battery management systems, achieving excellent energy efficiency and compact layout to meet the diverse needs of modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY30G20DF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy30g20df-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:39:00</pubDate>
	<description><![CDATA[This consumer grade N+P channel MOSFET adopts DFN3X3-8L packaging, integrates dual channels, has a rated voltage of 30V, and a continuous current of 16A. Specially designed for miniaturization, high-efficiency power conversion, and load control, suitable for application scenarios such as battery management systems, providing excellent energy efficiency and space saving solutions.]]></description>
</item>
<item>
	<title><![CDATA[HN2288(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hn2288-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:38:46</pubDate>
	<description><![CDATA[This consumer grade N+N channel MOSFET adopts a compact DFN3X3-8L package, with dual channel driving capability, rated voltage of 30V, and continuous current of up to 30A. Suitable for applications such as efficient power conversion, load balancing, and battery management systems, providing excellent integration and energy efficiency performance.]]></description>
</item>
<item>
	<title><![CDATA[HXY302DF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy302df-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:38:32</pubDate>
	<description><![CDATA[This consumer grade N+N channel MOSFET adopts a compact DFN3X3-8L package, dual channel design, rated voltage of 30V, and continuous current of up to 30A. Suitable for efficient power conversion, load sharing, and battery management systems, providing excellent integration and power processing capabilities to meet the miniaturization requirements of modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY30N06DF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy30n06df-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:37:50</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts DFN3X3-8L packaging, featuring compact size and high efficiency. Rated voltage of 60V, continuous current of up to 30A, suitable for applications such as power conversion, load switching, and battery management systems, achieving high-quality semiconductor solutions with small volume and high current.]]></description>
</item>
<item>
	<title><![CDATA[AON7544(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/aon7544-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:37:22</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts an ultra small DFN3X3-8L package, with strong 100A continuous current processing capability, and operates at a rated voltage of 30V. Specially designed for high-density and high-performance circuits, widely used in power conversion, load switch control, and battery management systems, achieving excellent power density and efficiency performance.]]></description>
</item>
<item>
	<title><![CDATA[HXY100N03DF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy100n03df-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:37:08</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts an extremely compact DFN3X3-8L package, with a rated voltage of 30V and a peak current of up to 100A. Specially designed for applications with high power density and limited space, such as power conversion, load switch control, and battery management systems, to achieve excellent current carrying capacity and energy-saving effects.]]></description>
</item>
<item>
	<title><![CDATA[HXY80N03DF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy80n03df-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:36:40</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a compact DFN3X3-8L package, which has excellent power density and heat dissipation performance. The rated voltage is 30V, with a continuous current of up to 80A, suitable for high-power applications with limited space, such as power conversion, load switch control, and battery management systems, achieving excellent energy efficiency and reliability.]]></description>
</item>
<item>
	<title><![CDATA[HXY60N03DF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy60n03df-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:36:12</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts DFN3X3-8L packaging, which is compact and efficient, with a rated voltage of 30V and a continuous current of up to 60A. Designed specifically for the miniaturization needs of modern electronic products, suitable for applications such as power conversion, load switching, and battery management systems, providing excellent power processing capabilities and space utilization.]]></description>
</item>
<item>
	<title><![CDATA[HXY50N03DF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy50n03df-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:35:44</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET features an ultra compact DFN3X3-8L package with excellent power density. Rated voltage of 30V, continuous current of up to 50A, especially suitable for efficient power conversion, load switch control, and battery management systems in compact spaces, providing excellent performance and reliability.]]></description>
</item>
<item>
	<title><![CDATA[HXY30N03DF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy30n03df-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:35:16</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts a compact DFN3X3-8L package, with a rated voltage of 30V and a continuous current of up to 30A. Specially designed for efficient and small-sized circuits, suitable for applications such as power conversion, load switching, and battery management systems, providing excellent power density and stability to meet the miniaturization needs of modern electronic products.]]></description>
</item>
<item>
	<title><![CDATA[SI2319(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2319-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:34:48</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging, with a rated voltage of 40V and supports up to 5A continuous current. It has low on resistance and fast switching performance, suitable for applications such as chargers and power converters, providing efficient and stable power control solutions for electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SI2318(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2318-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:34:34</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 packaging and is designed specifically for 40V voltage systems, with a powerful 5A current processing capability. With its excellent low conduction resistance and fast switching characteristics, it is widely used in chargers, power management, and various high-efficiency electronic devices to achieve efficient and stable power conversion and control.]]></description>
</item>
<item>
	<title><![CDATA[SI2308(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/si2308-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:34:20</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 packaging and is designed specifically for 60V voltage systems, providing up to 3A continuous current processing capability. Featuring excellent low conduction resistance and fast switching performance, it is widely used in scenarios such as chargers and power converters to achieve efficient and stable power control.]]></description>
</item>
<item>
	<title><![CDATA[IRLML6402(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/irlml6402-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:33:38</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging and is designed specifically for 20V voltage systems, providing 4.2A current processing capability. Equipped with low conduction resistance and fast switching characteristics, it is widely used in scenarios such as chargers and power converters to ensure efficient and stable power control and switching of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY4614S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4614s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:32:56</pubDate>
	<description><![CDATA[This consumer grade N+P channel MOSFET adopts SOP-8 packaging, with a rated voltage of 40V and a maximum continuous current of 7.2A, suitable for bidirectional voltage control scenarios such as battery management and power conversion. Integrated dual channel design, with low conduction resistance and fast switching ability, ensures efficient and stable operation under both positive and negative voltages, making it an ideal power switching component for modern electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY4407S(SOP-8)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy4407s-sop-8-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:32:42</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts a miniaturized SOP-8 package, designed specifically for 30V voltage environments, providing up to 12A continuous high current processing capability. The device has excellent low conduction resistance and fast switching performance, and is widely used in power control solutions for battery protection, power converters, and high-performance electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[HXY304DF(DFN3X3-8L)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/hxy304df-dfn3x3-8l-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:32:28</pubDate>
	<description><![CDATA[This consumer grade N+N channel MOSFET is packaged in DFN3X3-8L, with a rated voltage of 30V and a continuous current of up to 20A. Suitable for applications such as dual channel power conversion, load sharing, and battery management systems, it achieves the compact and energy-saving requirements of modern electronic devices with its compact size and efficient performance.]]></description>
</item>
<item>
	<title><![CDATA[DMG2305UX-7(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/dmg2305ux-7-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:32:14</pubDate>
	<description><![CDATA[This consumer grade P-channel MOSFET adopts SOT-23 packaging and is designed specifically for 20V voltage applications, with a 5A high current carrying capacity. Equipped with low conduction resistance and fast switching performance, it is widely used in chargers, power management and other scenarios, providing efficient and stable power conversion and control solutions.]]></description>
</item>
<item>
	<title><![CDATA[AO3400H(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/medium-and-low-voltage-mosfets/">MOSFET</category>
	<link><![CDATA[http://www.hxymos.com/en/medium-and-low-voltage-mosfets/ao3400h-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 11:31:46</pubDate>
	<description><![CDATA[This consumer grade N-channel MOSFET adopts SOT-23 packaging and is designed specifically for 30V voltage systems, with a continuous current processing capacity of up to 5.8A. It has excellent low conduction resistance and fast switching performance, and is widely used in high-power electronic devices such as chargers and power converters to achieve efficient and reliable power control and management.]]></description>
</item>
<item>
	<title><![CDATA[P4SMA600CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma600ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:45:20</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.48, voltage/V: 510, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101847     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA600A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma600a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:45:09</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.48, Voltage/V: 510, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101869     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA550CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma550ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:44:58</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.52, voltage/V: 467, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101878     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA550A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma550a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:44:47</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.52, Voltage/V: 467, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101877     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA540CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma540ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:44:36</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.54, voltage/V: 459, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101890     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA540A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma540a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:44:26</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.54, Voltage/V: 459, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101876     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA530CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma530ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:44:15</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.55, voltage/V: 450, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101873     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA530A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma530a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:44:04</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.55, Voltage/V: 450, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101860     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA510CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma510ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:43:53</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.57, voltage/V: 434, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101894     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA510A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma510a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:43:42</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.57, Voltage/V: 434, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101896     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA480CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma480ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:43:31</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.61, voltage/V: 408, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101887     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA480A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma480a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:43:20</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.61, Voltage/V: 408, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101893     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA440CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma440ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:43:09</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.68, voltage/V: 376, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101872     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA440A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma440a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:42:58</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.68, Voltage/V: 376, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101838     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA400CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma400ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:42:47</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.75, voltage/V: 342, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101895     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA400A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma400a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:42:36</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.75, Voltage/V: 342, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101889     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA350CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma350ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:42:26</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.85, voltage/V: 300, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101879     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA350A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma350a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:42:15</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.85, Voltage/V: 300, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101897     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA300CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma300ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:42:04</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1, voltage/V: 256, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101865     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA300A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma300a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:41:53</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1, Voltage/V: 256, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101864     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA250CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma250ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:41:42</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.2, voltage/V: 214, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101844     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA250A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma250a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:41:31</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.2, Voltage/V: 214, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101892     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA220CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma220ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:41:20</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.3, voltage/V: 185, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101874     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA220A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma220a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:41:09</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.3, Voltage/V: 185, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101862     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA200CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma200ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:40:58</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.5, voltage/V: 171, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101885     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA200A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma200a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:40:47</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.5, Voltage/V: 171, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101837     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA180CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma180ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:40:36</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.7, voltage/V: 154, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101868     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA180A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma180a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:40:26</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.7, Voltage/V: 154, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101842     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA170CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma170ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:40:15</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.8, voltage/V: 145, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101839     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA170A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma170a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:40:04</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.8, Voltage/V: 145, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101848     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA160CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma160ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:39:53</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.9, voltage/V: 136, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101883     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA160A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma160a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:39:42</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.9, Voltage/V: 136, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101867     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA150CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma150ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:39:31</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 2, voltage/V: 128, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101888     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA150A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma150a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:39:20</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 2, Voltage/V: 128, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101882     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA130CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma130ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:39:09</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 2.3, voltage/V: 111, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101846     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA130A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma130a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:38:58</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 2.3, Voltage/V: 111, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101870     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA120CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma120ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:38:47</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 2.5, voltage/V: 102, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101875     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA120A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma120a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:38:36</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 2.5, Voltage/V: 102, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101866     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA110CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma110ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:38:26</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 2.7, voltage/V: 94, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101855     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA110A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma110a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:38:15</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 2.7, Voltage/V: 94, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101840     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA100CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma100ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:38:04</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 3, voltage/V: 85.5, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101871     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA100A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma100a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:37:53</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 3, Voltage/V: 85.5, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101891     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA91CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma91ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:37:42</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 3.3, voltage/V: 77.8, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101854     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA91A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma91a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:37:31</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 3.3, Voltage/V: 77.8, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101853     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA82CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma82ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:37:20</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 3.6, voltage/V: 70.1, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101858     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA82A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma82a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:37:09</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 3.6, Voltage/V: 70.1, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101881     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA75CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma75ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:36:58</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 4, voltage/V: 64.1, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101850     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA75A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma75a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:36:47</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 4, Voltage/V: 64.1, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101880     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA68CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma68ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:36:36</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 4.5, voltage/V: 58.1, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101824     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA68A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma68a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:36:25</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 4.5, Voltage/V: 58.1, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101818     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA62CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma62ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:36:15</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 4.8, voltage/V: 53, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101857     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA62A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma62a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:36:04</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 4.8, Voltage/V: 53, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101834     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA56CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma56ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:35:53</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 5.3, voltage/V: 47.8, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101859     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA56A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma56a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:35:42</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 5.3, Voltage/V: 47.8, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101826     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA51CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma51ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:35:31</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 5.8, voltage/V: 43.6, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101843     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA51A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma51a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:35:20</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 5.8, Voltage/V: 43.6, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101828     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA47CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma47ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:35:09</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 6.3, voltage/V: 40.2, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101856     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA47A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma47a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:34:58</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 6.3, Voltage/V: 40.2, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101852     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA43CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma43ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:34:47</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 6.9, voltage/V: 36.8, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101825     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA43A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma43a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:34:36</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 6.9, Voltage/V: 36.8, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101861     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA39CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma39ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:34:25</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 7.6, voltage/V: 33.3, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101822     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA39A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma39a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:34:14</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 7.6, Voltage/V: 33.3, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101816     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA36CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma36ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:34:04</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 8.2, voltage/V: 30.8, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101795     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA36A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma36a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:33:53</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 8.2, Voltage/V: 30.8, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101884     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA33CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma33ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:33:42</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 9, voltage/V: 28.2, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101819     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA33A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma33a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:33:31</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 9, Voltage/V: 28.2, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101812     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA30CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma30ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:33:20</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 9.9, voltage/V: 25.6, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101835     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA30A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma30a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:33:09</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 9.9, Voltage/V: 25.6, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101817     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA27CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma27ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:32:58</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 10.9, voltage/V: 23.1, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101863     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA27A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma27a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:32:47</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 10.9, Voltage/V: 23.1, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101886     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA24CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma24ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:32:36</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 12.3, voltage/V: 20.5, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101821     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA24A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma24a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:32:25</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 12.3, Voltage/V: 20.5, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101845     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA22CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma22ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:32:15</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 13.4, voltage/V: 18.8, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101841     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA22A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma22a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:32:04</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 13.4, Voltage/V: 18.8, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101849     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA20CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma20ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:31:53</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 14.8, voltage/V: 17.1, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101820     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA20A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma20a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:31:42</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 14.8, Voltage/V: 17.1, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101808     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA18CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma18ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:31:31</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 16.1, voltage/V: 15.3, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101851     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA18A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma18a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:31:20</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 16.1, Voltage/V: 15.3, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101798     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA16CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma16ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:31:09</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 18.2, voltage/V: 13.6, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101810     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA16A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma16a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:30:58</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 18.2, Voltage/V: 13.6, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101823     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA15CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma15ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:30:47</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 19.3, voltage/V: 12.8, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101833     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA15A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma15a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:30:36</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 19.3, Voltage/V: 12.8, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101805     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA13CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma13ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:30:22</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 22.5, voltage/V: 11.1, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101831     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA13A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma13a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:30:11</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 22.5, Voltage/V: 11.1, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101803     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA12CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma12ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:30:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 24.6, voltage/V: 10.2, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101797     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA12A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma12a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:29:49</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 24.6, Voltage/V: 10.2, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101783     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA11CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma11ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:29:38</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 26.3, voltage/V: 9.4, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101809     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA11A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma11a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:29:27</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 26.3, Voltage/V: 9.4, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101829     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA10CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma10ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:29:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 28.3, voltage/V: 8.6, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101806     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA10A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma10a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:29:06</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 28.3, Voltage/V: 8.6, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101788     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA9.1CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma9-1ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:28:55</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 30.6, voltage/V: 7.8, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101827     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA9.1A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma9-1a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:28:44</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 30.6, Voltage/V: 7.8, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101813     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA8.2CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma8-2ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:28:33</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 33.9, voltage/V: 7, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101760     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA8.2A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma8-2a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:28:22</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 33.9, Voltage/V: 7, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101791     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA7.5CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma7-5ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:28:11</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 36.3, voltage/V: 6.4, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101815     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA7.5A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma7-5a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:28:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 36.3, Voltage/V: 6.4, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101793     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P4SMA6.8CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma6-8ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:27:49</pubDate>
	<description><![CDATA[This SMA packaged bidirectional TVS transient suppression diode is suitable for 5.8V voltage systems and provides efficient positive and negative overvoltage protection. Equipped with a powerful peak pulse current processing capability of 39A, it can quickly respond and accurately clamp when encountering bidirectional transient voltage shocks, ensuring that electronic devices are not damaged by instantaneous high voltage in high surge environments. It is an ideal high-performance protective device in compact designs.]]></description>
</item>
<item>
	<title><![CDATA[P4SMA6.8A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p4sma6-8a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:27:38</pubDate>
	<description><![CDATA[This SMA packaged unidirectional TVS transient suppression diode is designed to provide excellent forward overvoltage protection for 5.8V systems, with strong 39A peak pulse current withstand capacity. It can quickly respond and accurately clamp in the face of high-energy transient voltage events, effectively preventing sensitive electronic components from being damaged by instantaneous high-voltage shocks, especially suitable for compact circuit designs that require extremely high surge protection performance.]]></description>
</item>
<item>
	<title><![CDATA[P6SMB550CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb550ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:27:27</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 0.8, voltage/V: 467, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101832     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB550A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb550a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:27:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 0.8, Voltage/V: 467, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101792     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB540CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb540ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:27:06</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 0.8, voltage/V: 459, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101763     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB540A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb540a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:26:55</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 0.8, Voltage/V: 459, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101743     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB530CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb530ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:26:44</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 0.8, voltage/V: 450, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101757     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB530A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb530a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:26:33</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 0.8, Voltage/V: 450, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101804     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB510CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb510ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:26:22</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 0.9, voltage/V: 434, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101759     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB510A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb510a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:26:11</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 0.9, Voltage/V: 434, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101789     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB480CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb480ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:26:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 0.9, voltage/V: 408, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101786     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB480A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb480a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:25:49</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 0.9, Voltage/V: 408, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101782     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB440CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb440ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:25:39</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 1, voltage/V: 376, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101772     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB440A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb440a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:25:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 1, Voltage/V: 376, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101730     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB400CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb400ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:25:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 1.1, voltage/V: 342, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101787     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB400A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb400a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:25:06</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 1.1, Voltage/V: 342, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101807     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB350CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb350ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:24:55</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 1.3, voltage/V: 300, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101800     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB350A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb350a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:24:44</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 1.3, Voltage/V: 300, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101753     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB300CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb300ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:24:33</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 1.5, voltage/V: 256, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101761     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB300A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb300a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:24:22</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 1.5, Voltage/V: 256, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101794     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB250CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb250ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:24:11</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 1.8, voltage/V: 214, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101811     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB250A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb250a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:24:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 1.8, Voltage/V: 214, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101767     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB220CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb220ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:23:49</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 1.9, voltage/V: 185, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101781     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB220A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb220a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:23:38</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 1.9, Voltage/V: 185, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101774     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB200CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb200ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:23:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 2.2, voltage/V: 171, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101802     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB200A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb200a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:23:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 2.2, Voltage/V: 171, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101771     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB180CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb180ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:23:06</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 2.5, voltage/V: 154, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101779     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB180A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb180a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:22:55</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 2.5, Voltage/V: 154, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101790     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB170CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb170ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:22:44</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 2.6, voltage/V: 145, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101784     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB170A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb170a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:22:33</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 2.6, Voltage/V: 145, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101796     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB160CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb160ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:22:22</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 2.8, voltage/V: 136, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101777     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB160A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb160a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:22:11</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 2.8, Voltage/V: 136, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101740     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB150CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb150ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:22:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 2.9, voltage/V: 128, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101780     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB150A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb150a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:21:50</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 2.9, Voltage/V: 128, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101776     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB130CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb130ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:21:39</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 3.4, voltage/V: 111, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101773     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB130A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb130a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:21:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 3.4, Voltage/V: 111, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101735     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB120CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb120ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:21:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 3.7, voltage/V: 102, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101751     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB120A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb120a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:21:06</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 3.7, Voltage/V: 102, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101778     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB110CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb110ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:20:55</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 4, voltage/V: 94, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101765     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB110A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb110a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:20:44</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 4, Voltage/V: 94, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101768     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB100CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb100ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:20:33</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 4.5, voltage/V: 85.5, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101766     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB100A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb100a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:20:22</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 4.5, Voltage/V: 85.5, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101749     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB91CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb91ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:20:11</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 4.9, voltage/V: 77.8, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101741     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB91A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb91a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:20:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 4.9, Voltage/V: 77.8, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101738     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB82CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb82ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:19:50</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 5.4, voltage/V: 70.1, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101762     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB82A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb82a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:19:39</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 5.4, Voltage/V: 70.1, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101770     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB75CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb75ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:19:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 5.9, voltage/V: 64.1, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101758     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB75A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb75a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:19:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 5.9, Voltage/V: 64.1, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101733     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB68CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb68ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:19:06</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 6.6, voltage/V: 58.1, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101769     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB68A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb68a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:18:55</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 6.6, Voltage/V: 58.1, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101764     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB62CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb62ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:18:44</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 7.2, voltage/V: 53, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101755     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB62A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb62a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:18:33</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 7.2, Voltage/V: 53, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101754     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB56CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb56ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:18:22</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 7.9, voltage/V: 47.8, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101756     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB56A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb56a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:18:11</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 7.9, Voltage/V: 47.8, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101775     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB51CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb51ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:18:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 8.7, voltage/V: 43.6, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101731     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB51A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb51a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:17:49</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 8.7, Voltage/V: 43.6, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101727     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB47CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb47ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:17:39</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 9.4, voltage/V: 40.2, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101745     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB47A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb47a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:17:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 9.4, Voltage/V: 40.2, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101711     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB43CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb43ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:17:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 10.3, voltage/V: 36.8, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101736     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB43A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb43a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:17:06</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 10.3, Voltage/V: 36.8, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101720     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB39CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb39ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:16:55</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 11.3, voltage/V: 33.3, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101747     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB39A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb39a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:16:44</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 11.3, Voltage/V: 33.3, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101700     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB36CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb36ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:16:33</pubDate>
	<description><![CDATA[This SMB packaged bidirectional TVS transient suppression diode is suitable for working voltage environments of 30.8V and provides efficient positive and negative overvoltage protection. Equipped with the ability to handle 12.2A peak pulse current, it can quickly respond and accurately clamp when encountering transient voltage, effectively preventing electronic devices from being damaged by instantaneous high-voltage impact, especially suitable for use as a reliable surge protection device in medium power applications.]]></description>
</item>
<item>
	<title><![CDATA[P6SMB36A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb36a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:16:22</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 12.2, Voltage/V: 30.8, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101739     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB33CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb33ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:16:11</pubDate>
	<description><![CDATA[This SMB packaged bidirectional TVS transient suppression diode provides comprehensive positive and negative overvoltage protection for 28.2V systems. Having the ability to withstand 13.3A peak pulse current, it can quickly respond and effectively clamp in the face of bidirectional transient voltage shocks, ensuring that electronic devices are not damaged by instantaneous high voltage. It is an ideal choice for medium power applications, achieving efficient and reliable surge protection.]]></description>
</item>
<item>
	<title><![CDATA[P6SMB33A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb33a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:16:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 13.3, Voltage/V: 28.2, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101732     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB30CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb30ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:15:50</pubDate>
	<description><![CDATA[This SMB packaged bidirectional TVS transient suppression diode is suitable for 25.6V systems, providing efficient protection for positive and negative overvoltage. The device can respond quickly under transient voltage, with a peak pulse current of up to 14.7A, and effectively clamp the voltage to resist instantaneous high-voltage shocks, ensuring that electronic devices are not damaged by surges in medium power applications. It is an ideal circuit protection component.]]></description>
</item>
<item>
	<title><![CDATA[P6SMB30A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb30a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:15:39</pubDate>
	<description><![CDATA[This SMB package features a unidirectional TVS transient suppression diode, specifically designed to provide excellent forward overvoltage protection for 25.6V systems. The device has a peak pulse current processing capability of 14.7A, which can quickly respond and accurately clamp when encountering forward transient voltage, effectively preventing circuit damage due to instantaneous high voltage. It is an ideal protection solution for high reliability and medium current applications.]]></description>
</item>
<item>
	<title><![CDATA[P6SMB27CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb27ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:15:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 16.3, voltage/V: 23.1, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101716     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB27A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb27a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:15:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 16.3, Voltage/V: 23.1, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101725     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB24CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb24ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:15:06</pubDate>
	<description><![CDATA[This SMB packaged bidirectional TVS transient suppression diode is designed specifically for 20.5V systems and provides efficient bidirectional overvoltage protection. The device can quickly respond to positive and negative transient voltages, with a peak pulse current of up to 18.4A, ensuring effective clamping voltage to resist transient surge impacts. It is an ideal protective element for high stability and high current applications.]]></description>
</item>
<item>
	<title><![CDATA[P6SMB24A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb24a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:14:55</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 18.4, Voltage/V: 20.5, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101734     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB22CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb22ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:14:44</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 19.9, voltage/V: 18.8, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101737     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB22A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb22a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:14:33</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 19.9, Voltage/V: 18.8, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101722     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB20CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb20ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:14:22</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 22, voltage/V: 17.1, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101702     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB20A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb20a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:14:11</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 22, Voltage/V: 17.1, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101708     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB18CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb18ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:14:00</pubDate>
	<description><![CDATA[This SMB packaged bidirectional TVS transient suppression diode is suitable for 15.3V systems and provides comprehensive positive and negative overvoltage protection. With a peak pulse current processing capability of 24.2A, it can quickly respond and efficiently clamp when encountering bidirectional transient voltages, effectively resisting instantaneous high-voltage impacts and ensuring stable operation of electronic devices in high surge environments. It is an ideal protective component for medium to high power applications.]]></description>
</item>
<item>
	<title><![CDATA[P6SMB18A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb18a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:13:50</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 24.2, Voltage/V: 15.3, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101698     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB16CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb16ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:13:39</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 27.1, voltage/V: 13.6, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101750     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB16A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb16a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:13:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 27.1, Voltage/V: 13.6, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101728     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB15CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb15ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:13:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 28.8, voltage/V: 12.8, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101748     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB15A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb15a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:13:06</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 28.8, Voltage/V: 12.8, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101714     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB13CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb13ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:12:55</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 33.5, voltage/V: 11.1, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101724     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB13A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb13a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:12:44</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 33.5, Voltage/V: 11.1, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101709     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB12CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb12ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:12:33</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 36.5, voltage/V: 10.2, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101706     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB12A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb12a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:12:22</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 36.5, Voltage/V: 10.2, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101673     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB11CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb11ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:12:11</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 39.1, voltage/V: 9.4, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101718     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB11A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb11a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:12:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 39.1, Voltage/V: 9.4, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101721     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB10CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb10ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:11:50</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 42.1, voltage/V: 8.6, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101707     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB10A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb10a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:11:39</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 42.1, Voltage/V: 8.6, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101690     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB9.1CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb9-1ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:11:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 45.5, voltage/V: 7.8, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101710     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB9.1A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb9-1a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:11:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 45.5, Voltage/V: 7.8, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101701     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB8.2CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb8-2ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:11:06</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 50.4, voltage/V: 7, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101676     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB8.2A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb8-2a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:10:55</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 50.4, Voltage/V: 7, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101719     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB7.5CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb7-5ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:10:44</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 54, voltage/V: 6.4, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101713     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB7.5A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb7-5a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:10:33</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 54, Voltage/V: 6.4, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101681     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[P6SMB6.8CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb6-8ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:10:22</pubDate>
	<description><![CDATA[This SMB packaged bidirectional TVS transient suppression diode is suitable for 5.8V systems, providing comprehensive protection against positive and negative overvoltage. With excellent 58.1A peak pulse current withstand capacity, it can quickly respond and efficiently clamp when encountering bidirectional transient voltage, effectively protecting the circuit from instantaneous high-voltage impact, especially suitable for the design of miniaturized electronic devices with high surge current processing requirements.]]></description>
</item>
<item>
	<title><![CDATA[P6SMB6.8A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/p6smb6-8a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:10:12</pubDate>
	<description><![CDATA[This SMB packaged unidirectional TVS transient suppression diode is designed to provide precise overvoltage protection for 5.8V systems and has excellent transient response capabilities. It can withstand peak pulse currents of up to 58.1A and quickly clamp in the event of forward overvoltage, effectively protecting sensitive electronic components from instantaneous high voltage shocks, especially suitable for miniaturized circuit designs that require high surge current processing capabilities.]]></description>
</item>
<item>
	<title><![CDATA[SMCJ440CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj440ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:10:01</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 2.1, voltage/V: 440, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101648     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ440A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj440a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:09:50</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 2.1, Voltage/V: 440, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101705     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ400CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj400ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:09:39</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 2.3, voltage/V: 400, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101678     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ400A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj400a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:09:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 2.3, Voltage/V: 400, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101691     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ350CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj350ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:09:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 2.6, voltage/V: 350, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101703     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ350A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj350a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:09:06</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 2.6, Voltage/V: 350, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101752     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ300CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj300ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:08:55</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 3.1, voltage/V: 300, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101717     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ300A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj300a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:08:44</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 3.1, Voltage/V: 300, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101684     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ250CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj250ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:08:33</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 3.7, voltage/V: 250, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101688     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ250A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj250a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:08:22</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 3.7, Voltage/V: 250, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101715     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ220CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj220ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:08:11</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 4.2, voltage/V: 220, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101679     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ220A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj220a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:08:01</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 4.2, Voltage/V: 220, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101667     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ210CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj210ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:07:50</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 4.4, voltage/V: 210, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101704     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ210A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj210a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:07:39</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 4.4, Voltage/V: 210, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101680     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ200CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj200ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:07:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 4.6, voltage/V: 200, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101654     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ200A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj200a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:07:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 4.6, Voltage/V: 200, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101699     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ190CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj190ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:07:06</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 4.8, voltage/V: 190, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101685     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ190A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj190a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:06:55</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 4.8, Voltage/V: 190, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101649     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ188CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj188ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:06:44</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 5.1, voltage/V: 180, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101655     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ188A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj188a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:06:33</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 5.1, Voltage/V: 180, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101666     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ170CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj170ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:06:22</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 5.5, voltage/V: 170, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101723     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ170A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj170a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:06:11</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 5.5, Voltage/V: 170, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101675     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ160CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj160ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:06:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 5.8, voltage/V: 160, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101639     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ160A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj160a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:05:49</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 5.8, Voltage/V: 160, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101657     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ150CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj150ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:05:39</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 6.2, voltage/V: 150, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101672     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ150A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj150a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:05:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 6.2, Voltage/V: 150, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101683     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ130CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj130ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:05:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 7.2, voltage/V: 130, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101696     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ130A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj130a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:05:06</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 7.2, Voltage/V: 130, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101697     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ120CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj120ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:04:55</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 7.8, voltage/V: 120, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101686     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ120A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj120a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:04:44</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 7.8, Voltage/V: 120, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101662     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ110CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj110ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:04:33</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 8.5, voltage/V: 110, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101670     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ110A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj110a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:04:22</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 8.5, Voltage/V: 110, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101677     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ100CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj100ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:04:11</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 9.3, voltage/V: 100, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101674     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ100A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj100a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:04:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 9.3, Voltage/V: 100, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101660     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ90CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj90ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:03:49</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 10.3, voltage/V: 90, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101664     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ90A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj90a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:03:39</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 10.3, Voltage/V: 90, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101687     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ85CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj85ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:03:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 11, voltage/V: 85, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101641     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ85A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj85a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:03:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 11, Voltage/V: 85, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101646     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ78CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj78ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:03:06</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 11.9, voltage/V: 78, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101628     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ78A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj78a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:02:55</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 11.9, Voltage/V: 78, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101620     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ75CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj75ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:02:44</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 12.4, voltage/V: 75, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101651     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ75A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj75a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:02:33</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 12.4, Voltage/V: 75, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101632     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ70CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj70ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:02:22</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 13.3, voltage/V: 70, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101653     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ70A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj70a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:02:11</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 13.3, Voltage/V: 70, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101644     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ64CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj64ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:02:00</pubDate>
	<description><![CDATA[This SMC packaged bidirectional TVS transient suppression diode is suitable for 64V operating voltage systems and provides comprehensive positive and negative overvoltage protection. Equipped with a peak pulse current processing capability of 14.6A, it quickly responds and effectively clamps to a safe level when encountering bidirectional transient voltages, ensuring that sensitive electronic devices are not damaged by transient surge impacts. It is an ideal choice for high stability and high-efficiency circuit protection.]]></description>
</item>
<item>
	<title><![CDATA[SMCJ64A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj64a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:01:50</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 14.6, Voltage/V: 64, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101650     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ60CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj60ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:01:39</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 15.5, voltage/V: 60, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101633     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ60A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj60a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:01:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 15.5, Voltage/V: 60, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101663     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ58CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj58ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:01:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 16.1, voltage/V: 58, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101647     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ58A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj58a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:01:06</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 16.1, Voltage/V: 58, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101661     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ54CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj54ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:00:55</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 17.3, voltage/V: 54, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101665     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ54A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj54a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:00:44</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 17.3, Voltage/V: 54, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101652     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ51CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj51ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:00:33</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 18.2, voltage/V: 51, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101692     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ51A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj51a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:00:22</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 18.2, Voltage/V: 51, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101669     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ48CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj48ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:00:11</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 19.4, voltage/V: 48, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101621     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ48A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj48a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 10:00:01</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 19.4, Voltage/V: 48, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101640     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ45CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj45ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:59:50</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 20.6, voltage/V: 45, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101658     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ45A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj45a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:59:39</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 20.6, Voltage/V: 45, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101656     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ43CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj43ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:59:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 21.7, voltage/V: 43, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101642     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ43A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj43a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:59:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 21.7, Voltage/V: 43, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101695     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ40CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj40ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:59:06</pubDate>
	<description><![CDATA[This SMC packaged bidirectional TVS transient suppression diode is suitable for 40V operating voltage environments and provides excellent positive and negative overvoltage protection. The device has a strong ability to withstand 23.3A peak pulse current, quickly responding and accurately clamping when encountering bidirectional transient voltage, effectively preventing electronic devices from being damaged by instantaneous high voltage shocks. It is an ideal protection choice for high stability and high current applications.]]></description>
</item>
<item>
	<title><![CDATA[SMCJ40A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj40a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:58:55</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 23.3, Voltage/V: 40, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101638     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ36CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj36ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:58:44</pubDate>
	<description><![CDATA[This SMC packaged bidirectional TVS transient suppression diode is suitable for 36V systems and has excellent positive and negative overvoltage protection performance. Its design can withstand peak pulse currents of up to 25.9A, respond quickly and accurately clamp the voltage when encountering transient voltage shocks, effectively protecting electronic devices from instantaneous high voltage damage. It is an ideal bidirectional surge protection solution for high-power and high-speed applications.]]></description>
</item>
<item>
	<title><![CDATA[SMCJ36A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj36a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:58:33</pubDate>
	<description><![CDATA[This SMC packaged unidirectional TVS transient suppression diode is designed specifically for 36V systems, providing excellent overvoltage protection. With a strong peak pulse current withstand capacity of 25.9A, it can quickly respond and accurately clamp the voltage in forward transient events, effectively protecting electronic devices from instantaneous high voltage shocks. It is an ideal choice for high reliability and high current applications, ensuring stable and safe operation of circuits.]]></description>
</item>
<item>
	<title><![CDATA[SMCJ33CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj33ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:58:22</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 28.2, voltage/V: 33, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101694     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ33A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj33a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:58:11</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 28.2, Voltage/V: 33, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101645     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ30CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj30ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:58:00</pubDate>
	<description><![CDATA[This SMC packaged bidirectional TVS transient suppression diode is suitable for 30V operating voltage systems and provides comprehensive positive and negative overvoltage protection. It has a strong peak pulse current withstand capacity of 31A, and can quickly respond and effectively clamp the voltage when encountering bidirectional transient voltage shocks, ensuring that electronic devices are not damaged by transient surges. It is an indispensable and efficient protective device in high-power and high-speed applications.]]></description>
</item>
<item>
	<title><![CDATA[SMCJ30A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj30a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:57:49</pubDate>
	<description><![CDATA[This unidirectional TVS transient suppression diode adopts SMC packaging, specifically providing strong overvoltage protection for 30V systems. Its outstanding peak pulse current capability can reach up to 31A, quickly responding and accurately clamping voltage under forward transient conditions, effectively resisting high-energy surge impacts, ensuring sensitive electronic devices are not damaged by instantaneous high voltage, making it an ideal protective component for high-power applications.]]></description>
</item>
<item>
	<title><![CDATA[SMCJ28CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj28ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:57:39</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 33.1, voltage/V: 28, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101607     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ28A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj28a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:57:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 33.1, Voltage/V: 28, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101617     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ26CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj26ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:57:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 35.7, voltage/V: 26, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101611     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ26A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj26a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:57:06</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 35.7, Voltage/V: 26, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101615     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ24CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj24ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:56:55</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 38.6, voltage/V: 24, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101629     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ24A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj24a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:56:44</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 38.6, Voltage/V: 24, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101596     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ22CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj22ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:56:33</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 42.3, voltage/V: 22, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101668     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ22A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj22a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:56:22</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 42.3, Voltage/V: 22, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101636     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ20CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj20ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:56:11</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 46.3, voltage/V: 20, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101622     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ20A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj20a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:56:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 46.3, Voltage/V: 20, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101616     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ18CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj18ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:55:50</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 51.4, voltage/V: 18, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101625     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ18A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj18a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:55:39</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 51.4, Voltage/V: 18, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101613     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ17CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj17ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:55:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 54.4, voltage/V: 17, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101579     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ17A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj17a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:55:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 54.4, Voltage/V: 17, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101602     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ16CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj16ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:55:06</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 57.7, voltage/V: 16, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101626     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ16A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj16a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:54:55</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 57.7, Voltage/V: 16, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101630     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ15CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj15ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:54:44</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 61.5, voltage/V: 15, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101609     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ15A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj15a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:54:33</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 61.5, Voltage/V: 15, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101610     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ14CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj14ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:54:23</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 64.7, voltage/V: 14, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101631     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ14A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj14a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:54:12</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 64.7, Voltage/V: 14, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101593     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ13CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj13ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:54:01</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 69.8, voltage/V: 13, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101605     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ13A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj13a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:53:50</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 69.8, Voltage/V: 13, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101637     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ12CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj12ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:53:39</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 75.4, voltage/V: 12, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101576     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ12A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj12a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:53:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 75.4, Voltage/V: 12, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101624     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ11CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj11ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:53:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 82.5, voltage/V: 11, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101587     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ11A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj11a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:53:06</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 82.5, Voltage/V: 11, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101612     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ10CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj10ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:52:55</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 88.3, voltage/V: 10, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101608     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ10A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj10a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:52:45</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 88.3, Voltage/V: 10, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101623     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ9.0CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj9-0ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:52:34</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 97.4, voltage/V: 9, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101582     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ9.0A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj9-0a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:52:23</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 97.4, Voltage/V: 9, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101643     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ8.5CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj8-5ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:52:12</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 104.2, voltage/V: 8.5, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101627     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ8.5A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj8-5a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:52:01</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 104.2, Voltage/V: 8.5, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101571     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ8.0CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj8-0ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:51:50</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 110.3, voltage/V: 8, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101569     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ8.0A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj8-0a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:51:39</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 110.3, Voltage/V: 8, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101570     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ7.5CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj7-5ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:51:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 116.3, voltage/V: 7.5, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101594     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ7.5A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj7-5a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:51:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 116.3, Voltage/V: 7.5, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101590     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ7.0CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj7-0ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:51:07</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 125, voltage/V: 7, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101597     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ7.0A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj7-0a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:50:56</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 125, Voltage/V: 7, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101585     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ6.5CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj6-5ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:50:45</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 134, voltage/V: 6.5, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101599     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ6.5A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj6-5a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:50:34</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 134, Voltage/V: 6.5, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101604     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ6.0CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj6-0ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:50:23</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 145.7, voltage/V: 6, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101635     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ6.0A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj6-0a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:50:12</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 145.7, Voltage/V: 6, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101603     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ5.0CA(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj5-0ca-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:50:01</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 163, voltage/V: 5, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101591     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMCJ5.0A(SMC)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smcj5-0a-smc-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:49:50</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMC      Parameter Introduction:Current/A: 163, Voltage/V: 5, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101606     Minimum packaging: 3000pcs      Gross weight/gram :0.335g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ440CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj440ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:49:39</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 0.9, voltage/V: 440, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101578     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ440A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj440a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:49:29</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 0.9, Voltage/V: 440, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101600     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ400CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj400ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:49:18</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 0.9, voltage/V: 400, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101601     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ400A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj400a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:49:07</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 0.9, Voltage/V: 400, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101581     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ350CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj350ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:48:56</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 1.1, voltage/V: 350, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101565     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ350A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj350a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:48:45</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 1.1, Voltage/V: 350, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101583     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ300CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj300ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:48:34</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 1.3, voltage/V: 300, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101554     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ300A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj300a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:48:23</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 1.3, Voltage/V: 300, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101572     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ250CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj250ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:48:12</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 1.5, voltage/V: 250, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101545     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ250A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj250a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:48:01</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 1.5, Voltage/V: 250, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101595     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ220CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj220ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:47:51</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 1.7, voltage/V: 220, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101575     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ220A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj220a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:47:40</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 1.7, Voltage/V: 220, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101589     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ210CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj210ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:47:29</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 1.8, voltage/V: 210, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101580     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ210A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj210a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:47:18</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 1.8, Voltage/V: 210, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101598     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ200CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj200ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:47:07</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 1.9, voltage/V: 200, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101592     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ200A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj200a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:46:56</pubDate>
	<description><![CDATA[This unidirectional TVS transient suppression diode adopts a compact SMB package and is designed specifically for overvoltage protection in 200V DC voltage systems. The device can withstand a peak pulse current (IPP) of 1.9A in an instant, efficiently protecting the circuit from transient high voltage shocks, ensuring fast response and accurate clamping of voltage in forward overvoltage events. It is an ideal choice for safe operation of electronic equipment in high voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ190CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj190ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:46:45</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 2, voltage/V: 190, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101584     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ190A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj190a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:46:34</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 2, Voltage/V: 190, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101566     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ188CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj188ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:46:23</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 2.1, voltage/V: 180, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101525     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ188A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj188a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:46:13</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 2.1, Voltage/V: 180, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101573     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ170CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj170ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:46:02</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 2.2, voltage/V: 170, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101542     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ170A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj170a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:45:51</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 2.2, Voltage/V: 170, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101588     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ160CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj160ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:45:40</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 2.3, voltage/V: 160, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101562     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ160A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj160a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:45:29</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 2.3, Voltage/V: 160, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101547     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ150CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj150ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:45:18</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 2.5, voltage/V: 150, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101567     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ150A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj150a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:45:07</pubDate>
	<description><![CDATA[This unidirectional TVS transient suppression diode adopts SMB packaging, specifically providing efficient overvoltage protection for circuits operating at 150V DC voltage. The device has a maximum pulse peak current (IPP) withstand capacity of 2.5A, and can quickly respond and accurately clamp the voltage in forward overvoltage events, effectively preventing transient high voltage from causing damage to electronic devices. It is an ideal choice for high reliability and compact space applications.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ130CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj130ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:44:56</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 2.9, voltage/V: 130, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101564     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ130A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj130a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:44:45</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 2.9, Voltage/V: 130, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101549     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ120CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj120ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:44:35</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 3.1, voltage/V: 120, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101550     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ120A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj120a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:44:24</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 3.1, Voltage/V: 120, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101548     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ110CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj110ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:44:13</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 3.4, voltage/V: 110, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101586     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ110A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj110a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:44:02</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 3.4, Voltage/V: 110, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101544     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ100CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj100ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:43:51</pubDate>
	<description><![CDATA[This SMB packaged Bi bidirectional TVS transient suppression diode is suitable for 100V voltage systems and provides comprehensive positive and negative overvoltage protection. It can withstand peak pulse current IPP of up to 3.7A in transient events, respond quickly and effectively clamp abnormal voltage, especially suitable for power and signal line protection in high voltage environments, effectively resisting the impact of transient shocks such as lightning and static electricity on electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ100A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj100a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:43:40</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 3.7, Voltage/V: 100, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101556     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ90CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj90ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:43:29</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 4.1, voltage/V: 90, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101536     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ90A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj90a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:43:18</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 4.1, Voltage/V: 90, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101541     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ85CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj85ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:43:07</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 4.4, voltage/V: 85, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101511     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ85A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj85a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:42:57</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 4.4, Voltage/V: 85, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101561     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ78CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj78ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:42:46</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 4.8, voltage/V: 78, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101559     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ78A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj78a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:42:35</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 4.8, Voltage/V: 78, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101531     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ75CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj75ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:42:24</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 5, voltage/V: 75, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101537     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ75A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj75a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:42:13</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 5, Voltage/V: 75, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101538     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ70CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj70ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:42:02</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 5.3, voltage/V: 70, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101523     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ70A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj70a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:41:51</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 5.3, Voltage/V: 70, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101534     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ64CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj64ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:41:40</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 5.9, voltage/V: 64, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101568     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ64A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj64a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:41:29</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 5.9, Voltage/V: 64, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101551     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ60CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj60ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:41:18</pubDate>
	<description><![CDATA[This SMB package Bi bidirectional TVS transient suppression diode is suitable for 60V voltage systems and provides comprehensive positive and negative overvoltage protection. It can withstand a peak pulse current of 6.2A in transient events, respond quickly and effectively clamp abnormal voltages, ensuring that electronic devices are not affected by transient phenomena such as lightning strikes and static electricity. It is an ideal bidirectional surge protection component in high voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ60A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj60a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:41:08</pubDate>
	<description><![CDATA[This SMB package Uni unidirectional TVS transient suppression diode is designed specifically for circuits with a voltage level of 60V, providing reliable overvoltage protection. Having excellent transient response capability, capable of withstanding peak pulse current IPP of up to 6.2A, quickly clamping in transient overvoltage events, effectively preventing damage to electronic equipment caused by lightning strikes, electrostatic discharge, etc., it is an ideal unidirectional surge protection solution in medium to high voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ58CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj58ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:40:57</pubDate>
	<description><![CDATA[This TVS transient suppression diode adopts SMB packaging and is designed in a bidirectional manner, making it particularly suitable for combating transient overvoltage surges. With a rated reverse working voltage of 58V (VRWM) and a maximum pulse peak current of 6.5A (IPP), it can quickly respond to positive and negative polarity transient events, providing excellent circuit protection capabilities, effectively preventing overvoltage damage, and ensuring stable operation of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ58A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj58a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:40:46</pubDate>
	<description><![CDATA[This SMB packaged Uni unidirectional TVS transient suppression diode is specifically designed for 58V systems, providing excellent overvoltage protection. It can withstand a peak pulse current of 6.5A in transient events, respond quickly and accurately clamp voltage spikes, effectively preventing damage to electronic equipment caused by transient phenomena such as lightning strikes and static electricity. It is an ideal unidirectional surge protection device in medium to high voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ54CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj54ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:40:35</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 6.9, voltage/V: 54, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101546     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ54A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj54a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:40:24</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 6.9, Voltage/V: 54, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101557     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ51CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj51ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:40:13</pubDate>
	<description><![CDATA[The bidirectional TVS transient suppression diode packaged in Semite SMB is designed for efficient protection. This device has a reverse working voltage of 51V (VRWM) and a maximum pulse peak current of 7.3A (IPP), which can instantly absorb overvoltage spikes, effectively clamp the voltage, and protect the circuit from transient surge damage. It is suitable for overvoltage protection applications in various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ51A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj51a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:40:02</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 7.3, Voltage/V: 51, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101520     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ48CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj48ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:39:51</pubDate>
	<description><![CDATA[This SMB packaged Bi bidirectional TVS transient suppression diode is suitable for 48V voltage systems and provides comprehensive positive and negative overvoltage protection. It can withstand a peak pulse current of 7.8A in transient events, respond quickly and efficiently to clamp voltage fluctuations, effectively protecting electronic devices from transient impacts such as lightning and static electricity. It is an ideal bidirectional surge protection solution for medium to high voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ48A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj48a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:39:40</pubDate>
	<description><![CDATA[This SMB package Uni unidirectional TVS transient suppression diode is designed to provide efficient overvoltage protection for 48V systems. Capable of withstanding 7.8A peak pulse current, quickly responding and accurately clamping in transient voltage events, effectively preventing damage to electronic equipment caused by transient phenomena such as lightning strikes and static electricity, especially suitable for unidirectional surge protection requirements in high voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ45CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj45ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:39:29</pubDate>
	<description><![CDATA[This TVS transient suppression diode adopts SMB packaging and has bidirectional protection function, suitable for circuit protection under 45V working voltage environment. Its design can withstand peak pulse currents of up to 8.3A, respond quickly and effectively clamp the voltage under positive and negative transient overvoltage conditions, ensuring that electronic devices are not damaged by transient surge impacts. It is an ideal overvoltage protection component for precision circuits.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ45A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj45a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:39:19</pubDate>
	<description><![CDATA[This SMB packaged Uni unidirectional TVS transient suppression diode is suitable for 45V voltage systems and provides excellent overvoltage protection. It can withstand a peak pulse current of 8.3A in transient events, respond quickly and effectively clamp abnormal voltages, protect electronic devices from damage caused by transient phenomena such as lightning and static electricity, and is an ideal unidirectional surge protection component in medium to high voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ43CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj43ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:39:08</pubDate>
	<description><![CDATA[The TVS transient suppression diode is a high-performance bidirectional protection device that uses a compact SMB package and is suitable for overvoltage protection in various circuits. Its key parameters include a reverse working voltage of 43V (VRWM) and a peak pulse current of up to 8.7A (IPP), ensuring rapid response and clamping of abnormal voltages under positive and negative transient conditions, effectively preventing overvoltage from causing damage to sensitive electronic components.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ43A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj43a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:38:57</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 8.7, Voltage/V: 43, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101506     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ40CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj40ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:38:46</pubDate>
	<description><![CDATA[This SMB packaged Bi bidirectional TVS transient suppression diode is suitable for comprehensive protection in medium voltage systems. With a stable bidirectional reverse working voltage of 40V, VRWM can withstand up to 9.3A peak pulse current IPP under positive and negative transient overvoltage, quickly respond and efficiently clamp voltage spikes, effectively preventing circuit damage caused by lightning strikes, electrostatic discharge, etc., providing excellent bidirectional surge protection for power and signal lines.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ40A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj40a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:38:35</pubDate>
	<description><![CDATA[This SMB packaged Uni unidirectional TVS transient suppression diode is designed specifically for medium to high voltage applications and has a reliable reverse working voltage VRWM of 40V. It can effectively absorb and clamp peak pulse current IPP of up to 9.3A in overvoltage events, providing fast response and excellent unidirectional surge protection, effectively preventing transient phenomena such as lightning strikes and static electricity from damaging electronic equipment, and is suitable for various power and signal line protection needs.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ36CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj36ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:38:24</pubDate>
	<description><![CDATA[This SMB packaged Bi bidirectional TVS transient suppression diode is designed specifically for 36V systems and provides comprehensive positive and negative overvoltage protection. Can withstand 10.4A peak pulse current in transient events, respond quickly and effectively clamp voltage fluctuations, suitable for bidirectional surge protection of power and signal lines, effectively resist transient impacts caused by lightning strikes, static electricity, etc., and ensure stable operation of electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ36A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj36a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:38:13</pubDate>
	<description><![CDATA[This SMB packaged Uni unidirectional TVS transient suppression diode is designed specifically for 36V voltage systems, providing excellent overvoltage protection performance. It can withstand peak pulse currents of up to 10.4A, respond quickly and effectively clamp under transient overvoltage conditions, effectively protecting electronic devices from transient events such as lightning strikes and static electricity. It is an ideal unidirectional surge protection device for medium to high voltage applications.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ33CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj33ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:38:02</pubDate>
	<description><![CDATA[This SMB packaged TVS transient suppression diode features a Bi bidirectional design, suitable for comprehensive protection of medium and high voltage circuits. Equipped with a stable bidirectional reverse working voltage VRWM of 33V, it performs excellently in positive and negative overvoltage events, and can withstand peak pulse current IPP of up to 11.3A, effectively absorbing and quickly clamping transient voltage, providing excellent bidirectional surge protection capabilities for power lines, signal lines, and sensitive electronic devices, ensuring that the system is free from transient impacts such as lightning strikes and static electricity.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ33A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj33a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:37:52</pubDate>
	<description><![CDATA[This SMB packaged Uni unidirectional TVS transient suppression diode is designed for efficient overvoltage protection under 33V reverse operating voltage. It can withstand peak pulse current IPP of up to 11.3A in an instant, respond quickly and accurately clamp overvoltage, effectively protecting the circuit from transient events such as lightning strikes and static electricity. It is an ideal one-way surge protection solution for medium and high voltage applications such as power lines and signal lines.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ30CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj30ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:37:41</pubDate>
	<description><![CDATA[This SMB packaged Bi bidirectional TVS transient suppression diode is designed specifically for 30V voltage systems, providing efficient bidirectional overvoltage protection. Under positive and negative transient overvoltage conditions, it can withstand up to 12.4A peak pulse current, respond quickly and accurately clamp voltage spikes. It is suitable for transient impacts such as lightning protection and electrostatic discharge in power and signal lines, and is an ideal bidirectional surge protection device in medium voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ30A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj30a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:37:30</pubDate>
	<description><![CDATA[This SMB package Uni unidirectional TVS transient suppression diode is designed to provide efficient overvoltage protection for 30V systems. Capable of withstanding a peak pulse current of 12.4A, it can quickly respond to transient voltage events and accurately clamp to a safe level, effectively resisting the impact of transient phenomena such as lightning strikes and static electricity on electronic devices. It is an ideal unidirectional surge protection device for medium voltage applications.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ28CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj28ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:37:19</pubDate>
	<description><![CDATA[This SMB packaged Bi bidirectional TVS transient suppression diode is particularly suitable for medium voltage applications. Equipped with a stable bidirectional reverse working voltage VRWM of 28V, it can withstand peak pulse current IPP of up to 13.3A under positive and negative transient overvoltage conditions, providing fast response and efficient clamping function, effectively protecting the circuit from transient events such as lightning strikes and electrostatic discharge. It is an ideal bidirectional surge protection choice for power lines and signal lines.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ28A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj28a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:37:08</pubDate>
	<description><![CDATA[This SMB packaged Uni unidirectional TVS transient suppression diode is specifically designed for 28V systems, providing excellent overvoltage protection. Capable of withstanding a peak pulse current of 13.3A, it can quickly respond and clamp to a safe level in transient voltage events, effectively preventing damage to electronic devices caused by transient phenomena such as lightning strikes and static electricity. It is an ideal unidirectional surge protection component for medium voltage applications.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ26CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj26ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:36:57</pubDate>
	<description><![CDATA[This SMB packaged Bi bidirectional TVS transient suppression diode is suitable for 26V voltage systems and provides comprehensive positive and negative overvoltage protection. It can withstand up to 14.3A peak pulse current in transient events, with fast response and efficient clamping performance, effectively preventing damage to electronic equipment caused by transient phenomena such as lightning strikes and static electricity. It is an ideal bidirectional surge protection device for medium and high voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ26A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj26a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:36:46</pubDate>
	<description><![CDATA[This SMB package Uni unidirectional TVS transient suppression diode is designed specifically for circuits with a voltage level of 26V, providing efficient overvoltage protection. With a peak pulse current IPP withstand capacity of 14.3A, it can quickly respond and effectively clamp when encountering transient overvoltage, preventing instantaneous high-voltage damage to electronic equipment caused by lightning strikes, static electricity, etc. It is an ideal one-way surge protection solution for medium and high voltage applications.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ24CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj24ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:36:35</pubDate>
	<description><![CDATA[This SMB packaged bidirectional TVS transient suppression diode is designed for efficient protection of low-voltage circuits. It has a reverse working voltage of 24V (VRWM) and can withstand peak pulse current (IPP) of up to 15.5A. It quickly responds to positive and negative polarity overvoltage events and provides strong transient surge protection capabilities, ensuring that electronic devices are not damaged by transient voltage shocks. It is an ideal overvoltage protection solution for high reliability systems.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ24A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj24a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:36:24</pubDate>
	<description><![CDATA[This SMB package Uni unidirectional TVS transient suppression diode is designed to provide efficient overvoltage protection for 24V voltage systems. Having a peak pulse current withstand capacity of up to 15.5A, it can quickly respond and accurately clamp voltage in transient events, effectively resisting the impact of lightning strikes, static electricity and other transients on electronic devices. It is an ideal unidirectional surge protection solution in medium voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ22CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj22ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:36:13</pubDate>
	<description><![CDATA[This SMB package Bi bidirectional TVS transient suppression diode is designed specifically for 22V systems and has excellent bidirectional overvoltage protection capabilities. It can withstand up to 16.9A peak pulse current in positive and negative transient events, respond quickly and effectively clamp voltage spikes. It is suitable for bidirectional surge protection of power and signal lines, effectively preventing transient phenomena such as lightning strikes and static electricity from causing damage to electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ22A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj22a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:36:03</pubDate>
	<description><![CDATA[This SMB package Uni unidirectional TVS transient suppression diode is designed specifically for 22V voltage levels and provides strong overvoltage protection. Equipped with a peak pulse current carrying capacity of 16.9A, it can quickly respond and effectively clamp to a safe level when encountering transient overvoltage, effectively preventing damage to electronic equipment caused by lightning strikes, static electricity, and other impacts. It is an ideal unidirectional surge protection device for medium voltage applications.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ20CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj20ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:35:52</pubDate>
	<description><![CDATA[This SMB packaged Bi bidirectional TVS transient suppression diode is suitable for 20V voltage systems and has excellent positive and negative overvoltage protection function. It can withstand up to 18.6A peak pulse current in transient events, respond quickly and effectively clamp voltage fluctuations, providing comprehensive bidirectional surge protection for power and signal lines, effectively resisting the impact of transient shocks such as lightning and static electricity on electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ20A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj20a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:35:41</pubDate>
	<description><![CDATA[This SMB packaged Uni unidirectional TVS transient suppression diode is designed to provide efficient protection for medium voltage circuits. Equipped with a stable reverse working voltage VRWM of 20V, it can withstand peak pulse current IPP of up to 18.6A in case of overvoltage. It responds quickly and can effectively clamp transient voltage to prevent damage to electronic equipment caused by lightning strikes, electrostatic discharge, etc. It is an ideal one-way surge protection solution for power and signal lines.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ18CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj18ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:35:30</pubDate>
	<description><![CDATA[This SMB packaged Bi bidirectional TVS transient suppression diode is suitable for 18V voltage systems and provides excellent bidirectional overvoltage protection. It can withstand peak pulse currents of up to 20.6A in positive and negative transient events, respond quickly and effectively clamp abnormal voltages, ensuring that electronic devices are not affected by transient impacts such as lightning and static electricity. It is an ideal surge protection solution for medium and low voltage applications.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ18A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj18a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:35:19</pubDate>
	<description><![CDATA[This SMB packaged Uni unidirectional TVS transient suppression diode is designed specifically for 18V voltage levels and provides excellent overvoltage protection. It can withstand peak pulse currents of up to 20.6A in transient events, respond quickly and effectively clamp voltage spikes. It is suitable for one-way surge protection of power and signal lines, effectively resisting the impact of transient phenomena such as lightning strikes and static electricity on electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ17CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj17ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:35:08</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 21.8, voltage/V: 17, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101471     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ17A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj17a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:34:57</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 21.8, Voltage/V: 17, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101518     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ16CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj16ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:34:46</pubDate>
	<description><![CDATA[This SMB packaged Bi bidirectional TVS transient suppression diode is designed specifically for 16V systems and has excellent bidirectional overvoltage protection function. It can withstand up to 23.1A peak pulse current under positive and negative transient conditions, respond quickly and accurately clamp voltage fluctuations, effectively resist damage caused by transient events such as lightning and static electricity to electronic equipment, and is an ideal bidirectional surge protection component for medium and low voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ16A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj16a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:34:35</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 23.1, Voltage/V: 16, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101527     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ15CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj15ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:34:25</pubDate>
	<description><![CDATA[This SMB packaged Bi bidirectional TVS transient suppression diode is suitable for 15V systems and has excellent bidirectional overvoltage protection capabilities. It can withstand peak pulse currents of up to 24.6A in positive and negative transient events, respond quickly and effectively clamp the voltage, ensuring that electronic devices are not damaged by transient phenomena such as lightning strikes and static electricity. It is particularly suitable for providing strong surge protection in low to medium voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ15A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj15a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:34:14</pubDate>
	<description><![CDATA[This SMB packaged Uni unidirectional TVS transient suppression diode is designed specifically for medium to low voltage applications and has a stable reverse operating voltage VRWM of 15V. When facing transient overvoltage, it can withstand peak pulse current IPP of up to 24.6A, achieving fast response and efficient clamping, effectively protecting electronic devices from damage caused by transient events such as lightning and electrostatic discharge. It is an ideal one-way overvoltage protection scheme for power and signal lines.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ14CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj14ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:34:03</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 25.9, voltage/V: 14, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101509     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ14A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj14a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:33:52</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 25.9, Voltage/V: 14, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101441     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ13CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj13ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:33:41</pubDate>
	<description><![CDATA[This SMB packaged Bi bidirectional TVS transient suppression diode is suitable for efficient bipolar protection in medium voltage environments. With a stable bidirectional reverse working voltage VRWM of 13V, it can withstand peak pulse current IPP of up to 28A, respond quickly and effectively clamp overvoltage, providing comprehensive positive and negative surge protection for your electronic devices, preventing transient events such as lightning strikes and electrostatic discharge from causing damage to the circuit, and ensuring safe and reliable system operation.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ13A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj13a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:33:30</pubDate>
	<description><![CDATA[This SMB packaged Uni unidirectional TVS transient suppression diode is designed for medium voltage applications and has a stable reverse operating voltage of 13V VRWM. Under overvoltage impact, it can withstand peak pulse current IPP of up to 28A, ensuring fast response and efficient clamping of transient voltage, providing excellent one-way overvoltage protection capability, effectively preventing damage to electronic equipment caused by lightning strikes and electrostatic discharge, suitable for various power and signal line protection needs.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ12CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj12ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:33:19</pubDate>
	<description><![CDATA[This SMB packaged TVS transient suppression diode is of Bi bidirectional type, particularly suitable for efficient bidirectional overvoltage protection in medium and low voltage systems. With a stable bidirectional reverse working voltage of 12V, VRWM can operate safely under positive and negative polarity transients, and can withstand peak pulse current IPP of up to 30.2A. Quickly respond and accurately clamp instantaneous overvoltage, providing excellent surge protection performance for power lines, signal lines, and various electronic devices, effectively resisting transient events such as lightning strikes and static electricity.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ12A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj12a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:33:08</pubDate>
	<description><![CDATA[This SMB packaged Uni unidirectional TVS transient suppression diode is designed specifically for circuits with a voltage level of 12V and has excellent overvoltage protection performance. It is an ideal unidirectional surge protection device for power and signal lines, capable of withstanding peak pulse current IPP of up to 30.2A in transient events, quickly responding and effectively clamping abnormal voltages, ensuring stable operation of electronic devices in the event of transient impacts such as lightning strikes and static electricity.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ11CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj11ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:32:57</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 33, voltage/V: 11, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101500     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ11A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj11a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:32:46</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 33, Voltage/V: 11, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101466     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ10CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj10ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:32:36</pubDate>
	<description><![CDATA[This SMB packaged Bi bidirectional TVS transient suppression diode is particularly suitable for comprehensive protection of medium and low voltage systems. Equipped with a stable bidirectional reverse working voltage VRWM of 10V, it performs well under positive and negative transient overvoltage, and can withstand peak pulse current IPP of up to 35.3A. Quickly respond and efficiently clamp abnormal voltages, providing excellent bidirectional surge protection for power lines, signal lines, and various electronic devices, ensuring that the system is not affected by transient events such as lightning strikes and electrostatic discharge.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ10A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj10a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:32:25</pubDate>
	<description><![CDATA[This SMB package Uni unidirectional TVS transient suppression diode is designed specifically for 10V voltage systems, providing excellent overvoltage protection. Capable of withstanding peak pulse current IPP of up to 35.3A in transient events, quickly responding and effectively clamping abnormal voltages, suitable for power and signal line protection in low to medium voltage environments, preventing damage to electronic equipment caused by transient shocks such as lightning strikes and static electricity.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ9.0CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj9-0ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:32:14</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 39, voltage/V: 9, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101488     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ9.0A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj9-0a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:32:03</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 39, Voltage/V: 9, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101505     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ8.5CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj8-5ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:31:52</pubDate>
	<description><![CDATA[This SMB packaged Bi bidirectional TVS transient suppression diode is designed specifically for medium and low voltage systems, providing comprehensive positive and negative overvoltage protection. With a stable bidirectional reverse working voltage VRWM of 8.5V, it can withstand peak pulse current IPP of up to 41.7A in transient events, respond quickly and effectively clamp abnormal voltages. It is suitable for power lines, signal lines, and other occasions, providing excellent bidirectional surge protection for electronic devices, resisting lightning strikes, electrostatic discharge, and other impacts.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ8.5A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj8-5a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:31:41</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 41.7, Voltage/V: 8.5, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101497     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ8.0CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj8-0ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:31:30</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 44.2, voltage/V: 8, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101467     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ8.0A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj8-0a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:31:19</pubDate>
	<description><![CDATA[This SMB package Uni unidirectional TVS transient suppression diode is designed to provide efficient overvoltage protection for 8V voltage systems. It can withstand peak pulse currents of up to 44.2A in transient events, respond quickly and accurately clamp abnormal voltages, effectively preventing damage to electronic equipment caused by transient shocks such as lightning and static electricity, and is particularly suitable for high-intensity unidirectional surge protection requirements in low voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ7.5CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj7-5ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:31:09</pubDate>
	<description><![CDATA[This high-performance TVS transient suppression diode adopts SMB packaging and is a Bi bidirectional type, especially suitable for low voltage applications. Equipped with a stable bidirectional reverse working voltage VRWM of 7.5V, it can withstand peak pulse current IPP of up to 46.6A in the face of transient overvoltage shocks, respond quickly and efficiently clamp, providing excellent positive and negative polarity surge protection for your sensitive electronic devices, ensuring safe operation of the circuit under extreme conditions.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ7.5A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj7-5a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:30:58</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMB      Parameter Introduction:Current/A: 46.6, Voltage/V: 7.5, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101503     Minimum packaging: 3000pcs      Gross weight/gram :0.189g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMBJ7.0CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj7-0ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:30:47</pubDate>
	<description><![CDATA[This SMB packaged Bi bidirectional TVS transient suppression diode is designed specifically for 7V voltage systems and has excellent bidirectional overvoltage protection performance. Capable of withstanding peak pulse current IPP of up to 50A in positive and negative transient events, quickly responding and effectively clamping voltage spikes, especially suitable for power and signal line protection in low voltage environments, preventing damage to electronic equipment caused by high current shocks such as lightning strikes and static electricity.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ7.0A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj7-0a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:30:36</pubDate>
	<description><![CDATA[This SMB packaged Uni unidirectional TVS transient suppression diode is designed for efficient overvoltage protection and has a stable reverse operating voltage of 7V VRWM. It can withstand peak pulse current IPP of up to 50A in transient overvoltage events, providing fast response and strong surge absorption ability, effectively preventing circuit damage caused by lightning strikes, electrostatic discharge, etc. It is an ideal one-way overvoltage protection solution for low-voltage systems and sensitive electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ6.5CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj6-5ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:30:25</pubDate>
	<description><![CDATA[This SMB packaged Bi bidirectional TVS transient suppression diode is designed specifically for low-voltage systems and has a stable bidirectional reverse working voltage VRWM of 6.5V. Capable of withstanding peak pulse current IPP of up to 53.6A under positive and negative transient overvoltage, quickly responding and efficiently clamping abnormal voltages, providing comprehensive bidirectional surge protection, effectively preventing damage to electronic equipment caused by lightning strikes, static electricity, and other impacts, suitable for efficient protection needs of power and signal lines.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ6.5A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj6-5a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:30:14</pubDate>
	<description><![CDATA[The TVS transient suppression diode is of Uni unidirectional type and adopts a space saving SMB packaging. Specially designed for low voltage applications, it has a reliable reverse working voltage VRWM of 6.5V and can withstand a huge peak pulse current IPP of up to 53.6A in overvoltage events. Quick response and effective clamping of transient voltage provide excellent unidirectional surge protection for sensitive electronic devices, especially suitable for circuit situations that require high-strength lightning protection and electrostatic discharge protection.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ6.0CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj6-0ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:30:03</pubDate>
	<description><![CDATA[This SMB packaged Bi bidirectional TVS transient suppression diode is designed to provide efficient bidirectional overvoltage protection for low-voltage systems. Equipped with a stable reverse working voltage VRWM of 6V, it can withstand up to 58.3A peak pulse current IPP under positive and negative transients, respond quickly and accurately clamp transient voltage, effectively protecting power and signal lines from high current impacts such as lightning strikes and static electricity. It is an ideal surge protection device for low-voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ6.0A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj6-0a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:29:52</pubDate>
	<description><![CDATA[This SMB packaged Uni unidirectional TVS transient suppression diode is specifically designed for low voltage applications and has a stable reverse operating voltage of 6V VRWM. When encountering transient overvoltage, it can withstand a strong peak pulse current IPP of up to 58.3A, respond quickly and efficiently absorb surge energy, providing excellent one-way overvoltage protection, effectively protecting the circuit from lightning strikes, electrostatic discharge and other impacts, suitable for power and signal line designs with high requirements for transient protection.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ5.0CA(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj5-0ca-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:29:41</pubDate>
	<description><![CDATA[This SMB packaged Bi bidirectional TVS transient suppression diode is designed specifically for 5V voltage systems, providing strong positive and negative overvoltage protection. It can withstand peak pulse currents of up to 65.3A in transient events, respond quickly and effectively clamp abnormal voltages, especially suitable for high current impacts such as lightning protection and electrostatic discharge on power and signal lines in low voltage environments. It is an ideal and efficient surge protection component for low-voltage applications.]]></description>
</item>
<item>
	<title><![CDATA[SMBJ5.0A(SMB)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smbj5-0a-smb-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:29:31</pubDate>
	<description><![CDATA[This SMB packaged Uni unidirectional TVS transient suppression diode is designed specifically for low-voltage systems and provides excellent overvoltage protection. With a stable reverse working voltage of 5V, VRWM can instantly absorb and clamp peak pulse current IPP of up to 65.3A, respond quickly and efficiently, effectively prevent damage to electronic equipment caused by lightning strikes, static electricity and other transient phenomena, and is an ideal unidirectional surge protection choice for low-voltage power and signal lines.]]></description>
</item>
<item>
	<title><![CDATA[SMF440CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf440ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:29:20</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.3, voltage/V: 440, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101335     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF440A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf440a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:29:09</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.3, Voltage/V: 440, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101359     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF400A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf400a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:28:47</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.35, Voltage/V: 400, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101352     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF350CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf350ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:28:36</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.4, voltage/V: 350, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101374     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF350A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf350a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:28:25</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.4, Voltage/V: 350, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101360     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF300CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf300ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:28:14</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.45, voltage/V: 300, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101356     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF300A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf300a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:28:03</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.45, Voltage/V: 300, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101339     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF250CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf250ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:27:53</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.5, voltage/V: 250, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101350     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF250A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf250a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:27:42</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.5, Voltage/V: 250, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101337     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF220CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf220ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:27:31</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.5, voltage/V: 220, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101345     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF220A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf220a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:27:20</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.5, Voltage/V: 220, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101397     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF200CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf200ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:27:09</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.5, voltage/V: 200, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101361     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF200A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf200a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:26:58</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.5, Voltage/V: 200, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101370     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF190CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf190ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:26:47</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.5, voltage/V: 190, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101371     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF190A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf190a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:26:36</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.5, Voltage/V: 190, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101369     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF180CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf180ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:26:25</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.5, voltage/V: 180, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101391     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF180A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf180a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:26:15</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.5, Voltage/V: 180, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101373     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF170CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf170ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:26:04</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.6, voltage/V: 170, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101358     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF170A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf170a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:25:53</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.6, Voltage/V: 170, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101327     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF160CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf160ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:25:42</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.7, voltage/V: 160, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101362     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF160A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf160a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:25:31</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.7, Voltage/V: 160, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101355     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF150CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf150ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:25:20</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.7, voltage/V: 150, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101324     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF150A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf150a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:25:09</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.7, Voltage/V: 150, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101333     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF130CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf130ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:24:58</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.8, voltage/V: 130, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101306     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF130A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf130a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:24:47</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.8, Voltage/V: 130, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101340     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF120CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf120ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:24:36</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.9, voltage/V: 120, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101330     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF120A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf120a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:24:26</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 0.9, Voltage/V: 120, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101297     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF110CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf110ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:24:15</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 1, voltage/V: 110, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101318     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF110A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf110a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:24:04</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 1, Voltage/V: 110, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101317     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF100CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf100ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:23:53</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 1.1, voltage/V: 100, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101334     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF100A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf100a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:23:42</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 1.1, Voltage/V: 100, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101332     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF90CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf90ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:23:31</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 1.2, voltage/V: 90, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101320     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF90A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf90a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:23:20</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 1.2, Voltage/V: 90, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101367     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF85CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf85ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:23:09</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 1.3, voltage/V: 85, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101322     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF85A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf85a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:22:58</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 1.3, Voltage/V: 85, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101323     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF78CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf78ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:22:48</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 1.4, voltage/V: 78, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101321     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF78A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf78a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:22:37</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 1.4, Voltage/V: 78, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101315     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF75CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf75ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:22:26</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 1.4, voltage/V: 75, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101331     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF75A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf75a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:22:15</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 1.4, Voltage/V: 75, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101336     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF70CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf70ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:22:04</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 1.5, voltage/V: 70, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101316     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF70A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf70a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:21:53</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 1.5, Voltage/V: 70, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101319     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF64CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf64ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:21:42</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 1.7, voltage/V: 64, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101301     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF64A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf64a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:21:31</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 1.7, Voltage/V: 64, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101338     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF60CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf60ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:21:20</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 1.8, voltage/V: 60, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101348     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF60A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf60a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:21:10</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 1.8, Voltage/V: 60, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101313     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF58CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf58ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:20:59</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 2.1, voltage/V: 58, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101342     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF58A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf58a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:20:48</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 2.1, Voltage/V: 58, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101346     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF54CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf54ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:20:37</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 2.3, voltage/V: 54, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101307     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF54A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf54a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:20:26</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 2.3, Voltage/V: 54, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101344     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF51CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf51ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:20:15</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 2.4, voltage/V: 51, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101282     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF51A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf51a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:20:04</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 2.4, Voltage/V: 51, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101274     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF48CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf48ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:19:53</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 2.6, voltage/V: 48, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101279     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF48A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf48a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:19:42</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 2.6, Voltage/V: 48, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101281     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF45CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf45ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:19:31</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 2.8, voltage/V: 45, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101269     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF45A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf45a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:19:21</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 2.8, Voltage/V: 45, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101291     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF43CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf43ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:19:10</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 2.9, voltage/V: 43, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101273     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF43A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf43a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:18:59</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 2.9, Voltage/V: 43, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101325     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF40CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf40ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:18:48</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 3.1, voltage/V: 40, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101290     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF40A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf40a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:18:37</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 3.1, Voltage/V: 40, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101271     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF36CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf36ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:18:26</pubDate>
	<description><![CDATA[This SOD-123FL packaged bidirectional TVS transient suppression diode is suitable for 36V systems and provides excellent positive and negative overvoltage protection. Equipped with 3.4A peak pulse current IPP capability, it can quickly respond and effectively clamp transient high voltage in circuits, effectively resist damage to electronic devices caused by transient events such as surges and electrostatic discharge, and is an ideal protective component for high voltage applications, ensuring the safety and stability of power lines and signal interfaces.]]></description>
</item>
<item>
	<title><![CDATA[SMF36A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf36a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:18:15</pubDate>
	<description><![CDATA[This SOD-123FL packaged unidirectional TVS transient suppression diode is designed to provide overvoltage protection for 36V systems. Having excellent peak pulse current IPP carrying capacity (3.4A), it can quickly respond and effectively clamp when the circuit is subjected to forward transient overvoltage, preventing surge and transient events from causing damage to electronic equipment. It is an ideal protective component for high-voltage power lines and signal interfaces.]]></description>
</item>
<item>
	<title><![CDATA[SMF33CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf33ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:18:04</pubDate>
	<description><![CDATA[This SOD-123FL packaged bidirectional TVS transient suppression diode is suitable for 33V systems and provides excellent positive and negative overvoltage protection. With a peak pulse current carrying capacity of 3.8A, it can quickly respond and clamp transient high voltage fluctuations in the circuit, effectively resist damage caused by transient events such as surges and electrostatic discharge to electronic equipment, and is an ideal protective component for power lines and signal interfaces in high voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[SMF33A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf33a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:17:54</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 3.8, Voltage/V: 33, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101284     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF30CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf30ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:17:43</pubDate>
	<description><![CDATA[This SOD-123FL package bidirectional TVS transient suppression diode is designed specifically for 30V systems and has efficient bidirectional overvoltage protection function. The device can bear a peak pulse current IPP of 4.1A in the positive and negative directions, quickly respond to and clamp transient high voltage fluctuations in the circuit, effectively preventing damage to electronic devices caused by surges and electrostatic discharge. It is an ideal protective component for interfaces and power lines in medium and high voltage application scenarios.]]></description>
</item>
<item>
	<title><![CDATA[SMF30A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf30a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:17:32</pubDate>
	<description><![CDATA[This SOD-123FL packaged unidirectional TVS transient suppression diode is suitable for 30V systems and provides efficient forward overvoltage protection. Having the ability to withstand 4.1A peak pulse current, it can quickly respond and clamp when the circuit is subjected to forward transient high voltage, effectively preventing damage to electronic equipment caused by surges and transient events. It is an ideal protective device for power lines and signal interfaces in high voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[SMF28CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf28ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:17:21</pubDate>
	<description><![CDATA[This SOD-123FL package bidirectional TVS transient suppression diode is suitable for 28V systems and provides efficient positive and negative overvoltage protection. Equipped with a peak pulse current carrying capacity of 4.4A, it can quickly respond to and clamp transient high voltage in circuits, effectively preventing damage to electronic devices caused by transient events such as surges and electrostatic discharge. It is an ideal protective device for high voltage applications, ensuring the safe and stable operation of power lines and signal interfaces.]]></description>
</item>
<item>
	<title><![CDATA[SMF28A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf28a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:17:10</pubDate>
	<description><![CDATA[This SOD-123FL packaged unidirectional TVS transient suppression diode is designed specifically for 28V systems and provides excellent forward overvoltage protection. The device can withstand peak pulse current IPP of up to 4.4A, respond quickly and effectively clamp when the circuit is subjected to forward transient high voltage, effectively preventing damage to electronic equipment caused by surges, transients, etc. It is an ideal protective component for power lines and signal interfaces in high-voltage applications.]]></description>
</item>
<item>
	<title><![CDATA[SMF26CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf26ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:16:59</pubDate>
	<description><![CDATA[This SOD-123FL packaged bidirectional TVS transient suppression diode provides comprehensive positive and negative overvoltage protection for 26V systems. With a peak pulse current carrying capacity of 4.8A, it can quickly respond and effectively clamp transient high voltage fluctuations in the circuit, effectively resist the impact damage caused by transient events such as surges and electrostatic discharge on electronic devices, and is an ideal power line and signal interface protection component for high voltage applications.]]></description>
</item>
<item>
	<title><![CDATA[SMF26A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf26a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:16:48</pubDate>
	<description><![CDATA[This SOD-123FL packaged unidirectional TVS transient suppression diode provides excellent forward overvoltage protection for 26V systems. The device has a 4.8A peak pulse current IPP withstand capacity, which can quickly respond to and clamp transient high voltage in the circuit, effectively preventing surge and transient events from causing impact damage to electronic devices. It is an ideal protection choice for power lines and signal interfaces in high voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[SMF24CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf24ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:16:37</pubDate>
	<description><![CDATA[This SOD-123FL packaged bidirectional TVS transient suppression diode is suitable for 24V systems and provides excellent positive and negative overvoltage protection. Equipped with a peak pulse current carrying capacity of 5.1A, it can quickly respond and effectively clamp transient voltage fluctuations in circuits, preventing transient events such as surges and electrostatic discharge from causing impact damage to electronic devices. It is an ideal protection solution for power lines and signal interfaces in medium and high voltage applications.]]></description>
</item>
<item>
	<title><![CDATA[SMF24A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf24a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:16:26</pubDate>
	<description><![CDATA[This SOD-123FL packaged unidirectional TVS transient suppression diode is designed specifically for 24V systems, providing excellent forward overvoltage protection. The device has a 5.1A peak pulse current IPP capability, which can quickly respond and clamp to a safe level when the circuit encounters transient high voltage, effectively preventing surge and transient damage to electronic equipment. It is an ideal protective component for power lines and signal interfaces in medium to high voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[SMF22CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf22ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:16:16</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 5.6, voltage/V: 22, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101280     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF22A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf22a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:16:05</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 5.6, Voltage/V: 22, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101312     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF20CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf20ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:15:54</pubDate>
	<description><![CDATA[This SOD-123FL packaged bidirectional TVS transient suppression diode is suitable for 20V systems and provides comprehensive positive and negative overvoltage protection. With a peak pulse current IPP capability of 6.2A, it can quickly respond and effectively clamp transient voltage changes in circuits, ensuring that electronic devices are not damaged by transient events such as surges and electrostatic discharge. It is an ideal transient protection solution for interfaces and power lines in medium and high voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[SMF20A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf20a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:15:43</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 6.2, Voltage/V: 20, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101305     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF18CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf18ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:15:32</pubDate>
	<description><![CDATA[This SOD-123FL packaged bidirectional TVS transient suppression diode provides comprehensive positive and negative overvoltage protection for 18V systems. With a peak pulse current carrying capacity of up to 6.8A, it can quickly respond to and clamp transient voltage changes in circuits, effectively resist the impact damage caused by transient events such as surges and electrostatic discharge on electronic devices, and is an ideal protection choice for power lines and signal interfaces in medium to high voltage applications.]]></description>
</item>
<item>
	<title><![CDATA[SMF18A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf18a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:15:21</pubDate>
	<description><![CDATA[This SOD-123FL packaged unidirectional TVS transient suppression diode provides advanced forward overvoltage protection for 18V systems. Equipped with 6.8A peak pulse current IPP capability, it can quickly respond and clamp when the circuit encounters forward transient high voltage, effectively preventing surges and transient events from impacting electronic devices. It is an ideal choice for medium to high voltage applications, ensuring the safety and stability of power lines and signal interfaces.]]></description>
</item>
<item>
	<title><![CDATA[SMF17CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf17ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:15:10</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 7.2, voltage/V: 17, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101296     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF17A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf17a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:14:59</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 7.2, Voltage/V: 17, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101244     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF16CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf16ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:14:48</pubDate>
	<description><![CDATA[This SOD-123FL packaged bidirectional TVS transient suppression diode is designed specifically for 16V systems and has excellent positive and negative overvoltage protection capabilities. The device can instantly carry a peak pulse current IPP of up to 7.7A, quickly respond and effectively clamp transient voltage fluctuations in the circuit, ensuring that electronic devices are not damaged by transient events such as surges and electrostatic discharge. It is an ideal protection solution for power lines and signal interfaces.]]></description>
</item>
<item>
	<title><![CDATA[SMF16A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf16a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:14:38</pubDate>
	<description><![CDATA[This SOD-123FL packaged unidirectional TVS transient suppression diode is suitable for protection in various high-voltage systems. With a 16V reverse working voltage VRWM and excellent 7.7A peak pulse current IPP capability, it can instantly absorb and clamp high transient voltages, effectively protecting the circuit from surges, transients, and ESD impact damage. It is an ideal lightning protection and overvoltage solution for power and signal line interfaces.]]></description>
</item>
<item>
	<title><![CDATA[SMF15CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf15ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:14:27</pubDate>
	<description><![CDATA[This SOD-123FL packaged bidirectional TVS transient suppression diode is suitable for a wide range of circuit protection needs. With a stable reverse working voltage VRWM of 15V and a powerful 8.2A bidirectional peak pulse current IPP bearing capacity, it can efficiently suppress overvoltage transients, surge impacts, and electrostatic discharge on power and signal lines in an instant, ensuring that electronic devices are not damaged. It is an ideal protection choice for high reliability system interfaces.]]></description>
</item>
<item>
	<title><![CDATA[SMF15A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf15a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:14:16</pubDate>
	<description><![CDATA[SOD-123FL package unidirectional TVS transient suppression diode, designed specifically for efficient overvoltage protection. With a reverse working voltage of 15V VRWM and an 8.2A peak pulse current IPP capability, it can instantly absorb and suppress high-energy shocks in the circuit, effectively preventing damage to sensitive electronic devices caused by overvoltage and surges. Compact packaging, suitable for transient protection applications in various low-voltage systems and I/O interfaces.]]></description>
</item>
<item>
	<title><![CDATA[SMF14CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf14ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:14:05</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 8.6, voltage/V: 14, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101249     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF14A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf14a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:13:54</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 8.6, Voltage/V: 14, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101253     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF13CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf13ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:13:43</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 9.3, voltage/V: 13, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101257     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF13A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf13a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:13:32</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 9.3, Voltage/V: 13, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101277     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF12CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf12ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:13:21</pubDate>
	<description><![CDATA[The SOD-123FL packaged high-efficiency bidirectional TVS transient suppression diode is designed to provide excellent overvoltage protection for precision electronic equipment. With a reverse working voltage of 12V VRWM and a bidirectional peak pulse current IPP capability of up to 10.1A, it can instantly absorb and suppress surges and transient interference on power and signal lines, effectively preventing damage to circuits caused by electrostatic discharge and overvoltage events. It is an ideal protective component for modern low-voltage applications.]]></description>
</item>
<item>
	<title><![CDATA[SMF12A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf12a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:13:10</pubDate>
	<description><![CDATA[This SOD-123FL packaged unidirectional TVS transient suppression diode is designed specifically for 12V systems and has excellent overvoltage protection performance. The device can withstand peak pulse current IPP of up to 10.1A, respond quickly and effectively clamp forward transient overvoltage in the circuit, prevent surge, electrostatic discharge and other impact damage to electronic devices, and is an ideal protection choice for power lines and signal interfaces.]]></description>
</item>
<item>
	<title><![CDATA[SMF11CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf11ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:13:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 11, voltage/V: 11, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101268     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF11A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf11a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:12:49</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 11, Voltage/V: 11, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101245     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF10CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf10ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:12:38</pubDate>
	<description><![CDATA[This SOD-123FL packaged bidirectional TVS transient suppression diode is designed specifically for 10V systems and provides efficient overvoltage protection. Equipped with excellent bidirectional peak pulse current IPP capability (up to 11.8A), it can quickly respond and effectively clamp positive and negative transient voltages, preventing circuit damage caused by surges and electrostatic discharge, suitable for transient protection needs of various interfaces and power lines.]]></description>
</item>
<item>
	<title><![CDATA[SMF10A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf10a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:12:27</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 11.8, Voltage/V: 10, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101294     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF9.0CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf9-0ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:12:16</pubDate>
	<description><![CDATA[The bidirectional TVS transient suppression diode adopts a compact SOD-123FL package, which is particularly suitable for comprehensive overvoltage protection in 9V systems. This device can withstand peak pulse current IPP of up to 13A in both positive and negative directions, quickly respond and efficiently clamp transient voltage, effectively resist damage to electronic devices such as surges and electrostatic discharge, and is an ideal choice to ensure the stability of power and signal line interfaces.]]></description>
</item>
<item>
	<title><![CDATA[SMF9.0A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf9-0a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:12:05</pubDate>
	<description><![CDATA[This SOD-123FL packaged unidirectional TVS transient suppression diode provides excellent overvoltage protection for 9V systems. Has high tolerance, can operate under unidirectional peak pulse current of up to 13A, quickly respond and absorb transient voltage surges in the circuit, effectively preventing overvoltage from causing damage to electronic devices. Suitable for power and signal line interfaces, ensuring system stability and reliability.]]></description>
</item>
<item>
	<title><![CDATA[SMF8.5CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf8-5ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:11:54</pubDate>
	<description><![CDATA[This SOD-123FL packaged bidirectional TVS transient suppression diode is designed specifically for 8.5V systems, providing excellent positive and negative overvoltage protection. The device has a strong peak pulse current IPP carrying capacity (up to 13.9A), which can quickly respond and clamp transient voltage spikes, effectively protecting the circuit from transient events such as surges and electrostatic discharge. It is suitable for advanced transient protection applications of various interfaces and power lines.]]></description>
</item>
<item>
	<title><![CDATA[SMF8.5A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf8-5a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:11:43</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 13.9, Voltage/V: 8.5, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101311     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF8.0CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf8-0ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:11:32</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 14.7, voltage/V: 8, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101292     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF8.0A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf8-0a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:11:22</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 14.7, Voltage/V: 8, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101286     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF7.5CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf7-5ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:11:11</pubDate>
	<description><![CDATA[This SOD-123FL package bidirectional TVS transient suppression diode is designed to provide excellent overvoltage protection for 7.5V systems. The device has a strong bidirectional peak pulse current IPP carrying capacity of 15.5A, which can quickly respond and effectively clamp positive and negative transient voltage spikes, protecting the circuit from transient events such as surges and electrostatic discharge. It is suitable for advanced transient protection applications of various interfaces and power lines.]]></description>
</item>
<item>
	<title><![CDATA[SMF7.5A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf7-5a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:11:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SOD-123FL      Parameter Introduction:Current/A: 15.5, Voltage/V: 7.5, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101276     Minimum packaging: 3000pcs      Gross weight/gram :0.04g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMF7.0CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf7-0ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:10:49</pubDate>
	<description><![CDATA[This SOD-123FL packaged bidirectional TVS transient suppression diode is suitable for bidirectional overvoltage protection. Equipped with a reverse working voltage VRWM of 7V, it can withstand bidirectional peak pulse current IPP of up to 16.7A, and can quickly respond to and clamp positive and negative transient voltage spikes on power and signal lines, effectively preventing damage to electronic devices such as surges and electrostatic discharge. It is an ideal protective component for interface circuits.]]></description>
</item>
<item>
	<title><![CDATA[SMF7.0A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf7-0a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:10:38</pubDate>
	<description><![CDATA[A compact SOD-123FL packaged unidirectional TVS transient suppression diode designed for high energy efficiency protection. Equipped with a rated reverse working voltage of 7V VRWM and a powerful peak pulse current IPP carrying capacity of 16.7A, it can instantly respond and absorb overvoltage shocks and surges in the circuit, ensuring that electronic devices are not damaged by transient events. It is suitable for efficient overvoltage protection applications of various interfaces and power lines.]]></description>
</item>
<item>
	<title><![CDATA[SMF6.5CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf6-5ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:10:27</pubDate>
	<description><![CDATA[This SOD-123FL packaged bidirectional TVS transient suppression diode provides excellent positive and negative overvoltage protection for 6.5V systems. Equipped with a peak pulse current IPP capability of up to 17.9A, it can quickly respond to and clamp transient voltage fluctuations in circuits, effectively resist damage to electronic devices caused by transient events such as surges and electrostatic discharge, and is suitable for efficient protection needs of power lines and signal interfaces.]]></description>
</item>
<item>
	<title><![CDATA[SMF6.5A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf6-5a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:10:16</pubDate>
	<description><![CDATA[This SOD-123FL packaged unidirectional TVS transient suppression diode is suitable for efficient overvoltage protection in 6.5V systems. With excellent peak pulse current IPP capability (up to 17.9A), it can quickly respond to and absorb forward transient overvoltage in circuits, effectively preventing damage to electronic devices caused by surges and transient events. It is an ideal protection choice for power lines and signal interfaces.]]></description>
</item>
<item>
	<title><![CDATA[SMF6.0CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf6-0ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:10:05</pubDate>
	<description><![CDATA[This SOD-123FL packaged bidirectional TVS transient suppression diode is designed for efficient bidirectional overvoltage protection. Equipped with a reverse working voltage VRWM of 6V and a peak pulse current IPP of up to 19.4A, it can quickly respond and absorb voltage transients and surge impacts in the positive and negative directions, effectively preventing damage to the circuit caused by electrostatic discharge and overvoltage. It is particularly suitable for transient protection needs of low-voltage systems such as high-speed data lines and I/O interfaces.]]></description>
</item>
<item>
	<title><![CDATA[SMF6.0A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf6-0a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:09:54</pubDate>
	<description><![CDATA[High performance unidirectional TVS transient suppression diode, featuring a compact SOD-123FL packaging design, is particularly suitable for high-power transient event protection. This device has a stable reverse working voltage VRWM of 6V and can withstand a unidirectional peak pulse current IPP of up to 19.4A. It quickly responds and clamps overvoltage, effectively protecting the circuit from damage caused by surges, transient interference, and electrostatic discharge, ensuring safe and stable operation of electronic devices in harsh environments.]]></description>
</item>
<item>
	<title><![CDATA[SMF5.0CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf5-0ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:09:44</pubDate>
	<description><![CDATA[This SOD-123FL packaged bidirectional TVS transient suppression diode is designed to provide efficient overvoltage protection for 5V systems. With excellent bidirectional peak pulse current IPP capability of up to 21.7A, it can quickly respond to transient voltage changes in both positive and negative directions, and effectively clamp to a safe level to prevent damage to the circuit caused by surges and electrostatic discharge. It is suitable for transient protection needs of various low-voltage high-speed interfaces and power lines.]]></description>
</item>
<item>
	<title><![CDATA[SMF5.0A(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smf5-0a-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:09:33</pubDate>
	<description><![CDATA[SOD-123FL package unidirectional TVS transient suppression diode, designed for high-speed and efficient protection. Equipped with a rated reverse working voltage of 5V VRWM and a unidirectional peak pulse current IPP capability of up to 21.7A, it can quickly respond to overvoltage transients in the circuit, effectively absorb and clamp abnormal voltages, and prevent damage to sensitive electronic components. Suitable for transient protection requirements in low-voltage systems such as I/O interfaces and power lines.]]></description>
</item>
<item>
	<title><![CDATA[SMFJ30CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smfj30ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:09:22</pubDate>
	<description><![CDATA[This SOD-123FL packaged bidirectional TVS transient suppression diode is designed specifically for 30V systems, providing precise positive and negative overvoltage protection. With a 4.1A peak pulse current processing capability, it can quickly respond and effectively clamp the voltage when facing transient voltages, ensuring that electronic devices can still operate stably in the event of instantaneous high voltage events. It is especially suitable for applications with compact space and requiring efficient surge protection.]]></description>
</item>
<item>
	<title><![CDATA[SMFJ12CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smfj12ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:09:11</pubDate>
	<description><![CDATA[This SOD-123FL packaged bidirectional TVS transient suppression diode is suitable for 12V operating voltage environments and provides comprehensive positive and negative overvoltage protection. Equipped with a peak pulse current withstand capacity of up to 10.1A, it can quickly respond and accurately clamp in the face of transient voltage shocks, effectively preventing electronic devices from being damaged due to instantaneous high voltage, especially suitable for applications requiring efficient surge protection in compact designs.]]></description>
</item>
<item>
	<title><![CDATA[SMFJ6.0CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smfj6-0ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:09:00</pubDate>
	<description><![CDATA[The SOD-123FL packaged bidirectional TVS transient suppression diode is designed specifically for 6V systems, providing powerful positive and negative overvoltage protection. Having excellent 19.4A peak pulse current withstand capacity, it can quickly respond and effectively clamp the voltage when facing bidirectional transient voltage, ensuring that electronic devices are not damaged by instantaneous high voltage shocks, especially suitable for applications with limited space and high surge protection performance.]]></description>
</item>
<item>
	<title><![CDATA[SMFJ5.0CA(SOD-123FL)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smfj5-0ca-sod-123fl-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 09:08:49</pubDate>
	<description><![CDATA[This SOD-123FL packaged bidirectional TVS transient suppression diode is suitable for 5V systems and provides comprehensive positive and negative overvoltage protection. With excellent 21.7A peak pulse current processing ability, it quickly responds and effectively clamps when encountering bidirectional transient voltage shocks, ensuring that electronic devices are not damaged by instantaneous high voltage, especially suitable for applications with limited space and high surge protection performance.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ440CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj440ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:17:05</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.6, voltage/V: 440, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101474     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ440A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj440a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:16:54</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.6, Voltage/V: 440, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101437     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ400CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj400ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:16:43</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.6, voltage/V: 400, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101457     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ400A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj400a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:16:32</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.6, Voltage/V: 400, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101483     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ350CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj350ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:16:21</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.7, voltage/V: 350, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101463     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ350A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj350a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:16:10</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.7, Voltage/V: 350, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101464     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ300CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj300ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:15:59</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.8, voltage/V: 300, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101477     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ300A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj300a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:15:48</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 0.8, Voltage/V: 300, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101492     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ250CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj250ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:15:38</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1, voltage/V: 250, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101434     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ250A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj250a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:15:27</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1, Voltage/V: 250, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101469     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ220CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj220ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:15:16</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.1, voltage/V: 220, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101439     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ220A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj220a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:15:05</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.1, Voltage/V: 220, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101461     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ210CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj210ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:14:54</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.2, voltage/V: 210, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101476     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ210A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj210a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:14:43</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.2, Voltage/V: 210, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101489     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ200CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj200ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:14:32</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.2, voltage/V: 200, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101470     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ200A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj200a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:14:21</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.2, Voltage/V: 200, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101454     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ190CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj190ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:14:10</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.3, voltage/V: 190, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101435     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ190A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj190a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:14:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.3, Voltage/V: 190, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101460     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ180CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj180ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:13:49</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.4, voltage/V: 180, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101438     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ180A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj180a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:13:38</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.4, Voltage/V: 180, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101480     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ170CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj170ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:13:27</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.5, voltage/V: 170, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101446     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ170A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj170a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:13:16</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.5, Voltage/V: 170, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101440     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ160CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj160ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:13:05</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.5, voltage/V: 160, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101443     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ160A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj160a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:12:54</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.5, Voltage/V: 160, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101425     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ150CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj150ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:12:43</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.6, voltage/V: 150, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101462     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ150A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj150a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:12:32</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.6, Voltage/V: 150, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101447     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ130CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj130ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:12:22</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.9, voltage/V: 130, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101423     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ130A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj130a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:12:11</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 1.9, Voltage/V: 130, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101411     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ120CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj120ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:12:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 2.1, voltage/V: 120, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101404     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ120A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj120a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:11:49</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 2.1, Voltage/V: 120, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101444     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ110CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj110ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:11:38</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 2.3, voltage/V: 110, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101451     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ110A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj110a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:11:27</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 2.3, Voltage/V: 110, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101408     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ100CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj100ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:11:16</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 2.5, voltage/V: 100, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101452     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ100A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj100a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:11:05</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 2.5, Voltage/V: 100, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101465     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ90CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj90ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:10:54</pubDate>
	<description><![CDATA[This SMA packaged TVS transient suppression diode is of Bi bidirectional type, suitable for a wide range of voltage protection. Equipped with a high withstand bidirectional reverse working voltage VRWM of 90V, it can provide reliable protection under positive and negative polarity surges. The peak pulse current IPP is as high as 2.7A, which can quickly respond and effectively clamp transient overvoltage, ensuring that electronic devices are not damaged by lightning strikes, electrostatic discharge, etc. It is an ideal efficient bidirectional overvoltage protection solution for various types of circuits.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ90A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj90a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:10:44</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 2.7, Voltage/V: 90, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101428     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ85CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj85ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:10:33</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 2.9, voltage/V: 85, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101481     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ85A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj85a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:10:22</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 2.9, Voltage/V: 85, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101445     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ78CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj78ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:10:11</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 3.2, voltage/V: 78, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101475     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ78A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj78a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:10:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 3.2, Voltage/V: 78, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101479     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ75CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj75ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:09:49</pubDate>
	<description><![CDATA[This TVS transient suppression diode is of Bi bidirectional type and adopts SMA packaging form, suitable for circuit protection design in compact spaces. With an excellent bidirectional reverse working voltage VRWM of 75V, it can provide protection under positive and negative polarity surges. Its peak pulse current IPP capability is as high as 3.3A, ensuring fast response and effective clamping to a safe level in transient overvoltage events. It provides comprehensive and efficient bidirectional overvoltage protection solutions for power lines, signal lines, and various sensitive electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ75A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj75a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:09:38</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 3.3, Voltage/V: 75, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101472     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ70CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj70ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:09:27</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 3.5, voltage/V: 70, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101415     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ70A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj70a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:09:17</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 3.5, Voltage/V: 70, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101442     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ64CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj64ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:09:06</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 3.9, voltage/V: 64, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101406     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ64A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj64a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:08:55</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 3.9, Voltage/V: 64, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101402     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ60CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj60ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:08:44</pubDate>
	<description><![CDATA[This SMA package bidirectional TVS transient suppression diode is suitable for 60V voltage systems and provides high-level positive and negative bidirectional overvoltage protection. With a 4.1A peak pulse current processing capability, it can quickly respond and accurately clamp the voltage when the circuit is subjected to instantaneous high-voltage shocks, effectively protecting electronic devices from transient events such as lightning strikes, surges, and electrostatic discharge, ensuring stable system operation.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ60A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj60a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:08:33</pubDate>
	<description><![CDATA[This unidirectional TVS transient suppression diode adopts a compact SMA package, designed specifically for efficient circuit protection. With a stable reverse working voltage of 60V, VRWM can withstand peak pulse current IPP of up to 4.1A in transient events, respond quickly, effectively absorb and clamp overvoltage spikes, prevent circuit damage caused by lightning strikes, electrostatic discharge, etc. It is an ideal choice for various electronic devices, ensuring stable operation of the system from transient overvoltage effects.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ58CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj58ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:08:22</pubDate>
	<description><![CDATA[The TVS transient suppression diode is a Bi bidirectional device packaged in a miniaturized SMA form, suitable for efficient bidirectional overvoltage protection. Equipped with a stable bidirectional reverse working voltage VRWM of 58V, it can perform excellently in both positive and negative polarity transients, and can withstand peak pulse current IPP of up to 4.3A. It can quickly respond and clamp abnormal voltages to a safe level. It is an ideal protective component for power lines, signal lines, and various electronic devices to prevent transient voltage damage such as lightning strikes and electrostatic discharge.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ58A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj58a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:08:11</pubDate>
	<description><![CDATA[This TVS transient suppression diode is a Uni unidirectional type, packaged in a miniaturized SMA package, suitable for efficient circuit protection. With a stable reverse working voltage of 58V, VRWM can withstand peak pulse current IPP of up to 4.3A in the face of transient overvoltage events, ensuring fast response and effective clamping voltage, providing excellent one-way overvoltage protection for electronic devices, suitable for lightning protection and electrostatic discharge protection needs in power lines, signal lines, and other fields.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ54CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj54ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:08:00</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 4.6, voltage/V: 54, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101473     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ54A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj54a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:07:49</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 4.6, Voltage/V: 54, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101449     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ51CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj51ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:07:39</pubDate>
	<description><![CDATA[This SMA packaged bidirectional TVS transient suppression diode is designed to provide comprehensive positive and negative overvoltage protection for 51V systems. Capable of withstanding a peak pulse current of 4.9A, able to quickly respond and accurately clamp the voltage during positive and negative voltage transients, effectively protecting the circuit from transient events such as lightning strikes, surges, and electrostatic discharge, ensuring stable operation of electronic devices in high voltage fluctuation environments.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ51A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj51a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:07:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 4.9, Voltage/V: 51, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101421     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ48CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj48ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:07:17</pubDate>
	<description><![CDATA[This SMA packaged bidirectional TVS transient suppression diode is suitable for 48V voltage systems and provides excellent positive and negative overvoltage protection. Equipped with 5.2A peak pulse current processing capability, it can quickly respond and accurately clamp under high-voltage transients, effectively protecting the circuit from transient events such as lightning strikes, surges, and electrostatic discharge, ensuring stable and reliable operation of electronic devices under harsh conditions.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ48A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj48a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:07:06</pubDate>
	<description><![CDATA[This TVS transient suppression diode adopts SMA packaging and is a unidirectional Uni type device. It has a high stable reverse working voltage of 48V VRWM and can withstand peak pulse current IPP of up to 5.2A under extreme conditions. Designed for rapid response and absorption of transient overvoltage, effectively protecting circuits from transient high-voltage damage such as lightning strikes and electrostatic discharge, suitable for overvoltage protection needs of various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ45CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj45ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:06:55</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 5.5, voltage/V: 45, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101379     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ45A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj45a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:06:44</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 5.5, Voltage/V: 45, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101417     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ43CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj43ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:06:33</pubDate>
	<description><![CDATA[This TVS transient suppression diode adopts a Bi bidirectional design and is packaged in a space saving SMA form, suitable for positive and negative polarity surge protection. With an excellent bidirectional reverse working voltage of 43V, VRWM can withstand peak pulse current IPP of up to 5.8A, effectively preventing overvoltage transients and ensuring electronic devices are free from lightning, static electricity, and other transient voltage shocks. It is an ideal bidirectional overvoltage protection solution for power and signal lines.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ43A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj43a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:06:22</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 5.8, Voltage/V: 43, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101436     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ40CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj40ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:06:11</pubDate>
	<description><![CDATA[This SMA packaged bidirectional TVS transient suppression diode is suitable for 40V voltage levels and provides excellent positive and negative bidirectional overvoltage protection. The device has the ability to withstand a peak pulse current of 6.2A, which can quickly respond and effectively clamp the transient high voltage that occurs in the circuit, preventing damage to the system caused by lightning strikes, ESD, and power fluctuations. Its compact packaging and efficient protective performance ensure the stable and reliable operation of electronic devices in high voltage environments.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ40A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj40a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:06:01</pubDate>
	<description><![CDATA[This SMA packaged unidirectional TVS transient suppression diode is suitable for 40V operating voltage systems and provides efficient forward overvoltage protection. With a peak pulse current withstand capacity of 6.2A, it can quickly respond and accurately clamp when the circuit encounters instantaneous high voltage, effectively preventing transient events such as lightning strikes and surges from causing damage to electronic equipment, ensuring system stability and reliability.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ36CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj36ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:05:50</pubDate>
	<description><![CDATA[The bidirectional TVS transient suppression diode packaged in this SMA is designed specifically for bidirectional overvoltage protection at 36V operating voltage. The device has excellent transient response ability and can withstand peak pulse current IPP of up to 6.9A. It can efficiently absorb and clamp abnormal voltage in both positive and negative directions, effectively preventing damage to the circuit caused by surges, electrostatic discharge, etc., ensuring stable and reliable operation of electronic devices in high-voltage transient environments.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ36A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj36a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:05:39</pubDate>
	<description><![CDATA[SMA packaged unidirectional TVS transient suppression diode, designed specifically for efficient protection. With a rated reverse working voltage of 36V VRWM and a peak pulse current IPP of up to 6.9A, it can instantly absorb high-energy surges, effectively protecting the circuit from overvoltage impacts and ensuring stable operation of electronic devices. Suitable for transient overvoltage protection of various sensitive electronic circuits.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ33CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj33ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:05:28</pubDate>
	<description><![CDATA[This SMA packaged bidirectional TVS transient suppression diode is designed specifically for 33V voltage systems, providing excellent positive and negative bidirectional overvoltage protection. Capable of withstanding 7.5A peak pulse current, able to quickly respond and accurately clamp during instantaneous voltage spikes, effectively protecting electronic devices from transient events such as lightning strikes, surges, and electrostatic discharge, ensuring stable and reliable system operation.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ33A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj33a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:05:17</pubDate>
	<description><![CDATA[This SMA packaged unidirectional TVS transient suppression diode is specifically designed for circuit protection under a rated reverse operating voltage of 33V, with excellent transient overvoltage protection capabilities. Its peak pulse current IPP is as high as 7.5A, which can quickly respond and efficiently clamp the voltage when the circuit is subjected to abnormal overvoltage shocks, preventing damage to sensitive electronic components and ensuring stable operation of the system in high-voltage transient environments. It is an ideal choice for power and signal lines to resist surges.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ30CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj30ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:05:06</pubDate>
	<description><![CDATA[The TVS transient suppression diode is a Bi bidirectional design, designed with a compact SMA package specifically for efficient bidirectional overvoltage protection. It has a stable bidirectional reverse working voltage VRWM of 30V, which performs well under both positive and negative transient shocks, and can withstand peak pulse current IPP of up to 8.3A. Quickly respond and effectively clamp abnormal voltage, providing excellent bidirectional surge protection for power lines, signal lines, and sensitive electronic devices, ensuring the safe and stable operation of the system.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ30A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj30a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:04:55</pubDate>
	<description><![CDATA[The unidirectional TVS transient suppression diode packaged in SMA is designed for a rated working voltage of 30V DC and can withstand peak pulse currents of up to 8.3A in an instant, effectively protecting the circuit from overvoltage transients and surge damage, ensuring stable operation of sensitive semiconductor devices.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ28CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj28ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:04:45</pubDate>
	<description><![CDATA[This SMA packaged bidirectional TVS transient suppression diode is designed for efficient bidirectional overvoltage protection in 28V voltage systems. The device can withstand a peak pulse current IPP of 8.8A, and can quickly respond and accurately clamp the voltage under both positive and negative transient voltages, effectively resisting surges caused by lightning strikes, electrostatic discharge, and power supply mutations, ensuring that electronic equipment is not damaged and the system operates stably under harsh conditions.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ28A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj28a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:04:34</pubDate>
	<description><![CDATA[This SMA packaged unidirectional TVS transient suppression diode provides excellent forward overvoltage protection for 28V systems. Equipped with 8.8A peak pulse current processing capability, it can quickly respond and accurately clamp the voltage when the circuit is subjected to forward transient high voltage, effectively preventing damage caused by lightning strikes, surges, and other impacts, ensuring stable operation of electronic equipment under high reliability conditions.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ26CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj26ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:04:23</pubDate>
	<description><![CDATA[The bidirectional TVS transient suppression diode packaged in this SMA is specifically designed for 26V systems, providing comprehensive positive and negative overvoltage protection. Equipped with the ability to handle 9.5A peak pulse current, it can quickly respond and accurately clamp to a safe level in the event of instantaneous voltage fluctuations, effectively preventing the impact of lightning strikes, surges, and electrostatic discharge on electronic devices, ensuring stable and long-lasting operation of the circuit.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ26A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj26a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:04:12</pubDate>
	<description><![CDATA[This SMA packaged unidirectional TVS transient suppression diode is designed specifically for 26V systems and provides powerful forward overvoltage protection. Capable of withstanding 9.5A peak pulse current, able to quickly respond and efficiently clamp transient high-voltage events in circuits, effectively preventing damage to electronic equipment caused by lightning strikes, surges, etc., and ensuring stable operation of the system in harsh environments.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ24CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj24ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:04:01</pubDate>
	<description><![CDATA[This SMA packaged TVS transient suppression diode is of Bi bidirectional type, designed specifically for efficient bidirectional overvoltage protection. With a stable bidirectional reverse working voltage of 24V, VRWM performs well in both positive and negative polarity transients, and can withstand peak pulse current IPP of up to 10.3A. It can quickly respond and accurately clamp instantaneous high voltage, effectively preventing circuit damage caused by lightning strikes, electrostatic discharge, etc. It is an ideal transient protection solution for power lines, signal lines, and various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ24A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj24a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:03:50</pubDate>
	<description><![CDATA[This SMA packaged unidirectional TVS transient suppression diode is suitable for 24V voltage systems and provides powerful forward overvoltage protection function. It has the ability to withstand a peak pulse current of up to 10.3A, and can quickly respond and accurately clamp when the circuit encounters instantaneous high voltage, effectively resisting the damage caused by transient events such as lightning strikes and surges to electronic equipment, ensuring stable and reliable system operation.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ22CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj22ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:03:39</pubDate>
	<description><![CDATA[This SMA packaged bidirectional TVS transient suppression diode is designed specifically for 22V systems, achieving excellent bidirectional overvoltage protection. The device has a peak pulse current withstand capacity of 11.3A, and can quickly respond and accurately clamp the voltage under positive and negative transient voltage shocks, effectively defending against surges caused by lightning strikes, electrostatic discharge, and power supply mutations, ensuring that electronic devices can maintain stable operation even in the face of high voltage fluctuations.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ22A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj22a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:03:28</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 11.3, Voltage/V: 22, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101414     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ20CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj20ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:03:17</pubDate>
	<description><![CDATA[This SMA packaged bidirectional TVS transient suppression diode is designed specifically for 20V voltage systems, providing excellent positive and negative bidirectional overvoltage protection. Capable of withstanding 12.3A peak pulse current, able to quickly respond and accurately clamp during positive and negative voltage transients, effectively resisting the impact of transient events such as lightning strikes, surges, and electrostatic discharge on the circuit, ensuring stable operation of electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ20A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj20a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:03:07</pubDate>
	<description><![CDATA[This SMA packaged unidirectional TVS transient suppression diode is designed specifically for 20V voltage systems, providing efficient forward overvoltage protection. The device has a peak pulse current withstand capacity of 12.3A, and can quickly respond and accurately clamp the voltage when the circuit is facing instantaneous high voltage, effectively defending against transient events such as lightning strikes and surges on electronic devices, ensuring stable and reliable operation of the system.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ18CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj18ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:02:56</pubDate>
	<description><![CDATA[This SMA packaged bidirectional TVS transient suppression diode is designed specifically for 18V systems, providing efficient bidirectional overvoltage protection. Capable of withstanding a peak pulse current of up to 13.7A, able to quickly respond and accurately clamp under positive and negative voltage surges, effectively resisting transient high voltage caused by lightning strikes, static electricity, and power fluctuations, ensuring stable and safe operation of electronic devices in harsh environments.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ18A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj18a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:02:45</pubDate>
	<description><![CDATA[This SMA packaged unidirectional TVS transient suppression diode is suitable for 18V voltage systems and provides strong forward overvoltage protection. Equipped with a peak pulse current processing capability of up to 13.7A, it can quickly respond and accurately clamp when encountering transient high voltage in the circuit, effectively resisting lightning strikes, surges and other impacts, ensuring stable and safe operation of electronic devices under harsh conditions.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ17CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj17ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:02:34</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 14.5, voltage/V: 17, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101376     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ17A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj17a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:02:23</pubDate>
	<description><![CDATA[This SMA packaged unidirectional TVS transient suppression diode is designed specifically for 17V voltage systems, providing efficient forward overvoltage protection. Equipped with a peak pulse current processing capability of up to 14.5A, it can quickly respond and accurately clamp the voltage when the circuit encounters transient high voltage, effectively preventing damage caused by lightning strikes, surges, and other impacts, ensuring stable operation of electronic equipment under harsh conditions.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ16CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj16ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:02:12</pubDate>
	<description><![CDATA[This SMA packaged TVS transient suppression diode adopts Bi bidirectional design, suitable for multi voltage polarity protection. With a rated reverse working voltage of 16V VRWM, it can withstand peak pulse current IPP of 15.4A, quickly respond and accurately clamp instantaneous overvoltage to a safe level, providing excellent lightning protection and transient surge protection for circuits, ensuring stable operation of sensitive electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ16A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj16a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:02:01</pubDate>
	<description><![CDATA[This SMA packaged unidirectional TVS transient suppression diode is designed to provide efficient protection for precision circuits under 16V reverse operating voltage. With a peak pulse current withstand capacity of up to 15.4A, it can quickly respond to instantaneous overvoltage events and accurately clamp the voltage to prevent overload damage. As an ideal lightning and surge protection device, it ensures that electronic devices can maintain stable and safe operation even when subjected to transient voltage shocks.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ15CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj15ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:01:50</pubDate>
	<description><![CDATA[SMA packaged high-quality bidirectional TVS transient suppression diode, specifically designed for efficient bidirectional overvoltage protection. Its VRWM rated reverse working voltage is 15V, and it can safely withstand peak pulse current IPP of up to 16.4A in the event of transient events, ensuring that voltage spikes are clamped to a safe level under fast response, effectively preventing circuit damage caused by lightning strikes, electrostatic discharge, or power fluctuations, and ensuring system stability and reliability.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ15A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj15a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:01:39</pubDate>
	<description><![CDATA[This high-performance unidirectional TVS transient suppression diode adopts a compact SMA package, which is particularly suitable for space limited designs. Its VRWM rated reverse working voltage is 15V, providing excellent protection in the event of transient overvoltage events. The peak pulse current IPP is as high as 16.4A, ensuring fast response and effective clamping of abnormal voltages, providing strong overvoltage protection for sensitive electronic devices. It is suitable for surge protection applications on various power and signal lines.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ14CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj14ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:01:28</pubDate>
	<description><![CDATA[This high-performance bidirectional TVS transient suppression diode packaged in SMA is suitable for 14V systems and provides excellent bidirectional overvoltage protection. The device can withstand peak pulse currents of up to 17.2A in the positive and negative directions, respond quickly, and effectively clamp the instantaneous high voltage to the safety threshold, resisting transient events such as lightning strikes, electrostatic discharge, and power supply mutations for circuit boards and sensitive electronic components, ensuring stable and reliable system operation.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ14A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj14a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:01:18</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 17.2, Voltage/V: 14, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101365     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ13CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj13ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:01:07</pubDate>
	<description><![CDATA[This SMA packaged bidirectional TVS transient suppression diode is suitable for efficient bidirectional overvoltage protection at 13V operating voltage. It has strong transient response performance and can withstand peak pulse currents of up to 18.6A under positive and negative surges, quickly clamping transient voltage to a safe level, effectively protecting the circuit from damage caused by lightning strikes, ESD, and power fluctuations, ensuring stable operation of electronic equipment, making it an ideal choice for system level protection.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ13A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj13a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:00:56</pubDate>
	<description><![CDATA[This SMA packaged unidirectional TVS transient suppression diode provides efficient forward overvoltage protection for 13V systems. With a peak pulse current IPP capability of up to 18.6A, it can quickly respond and clamp instantaneous high voltage in the circuit, effectively preventing damage to electronic equipment caused by surges and transient events. It is especially suitable for power lines and signal interfaces that require high-power transient protection.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ12CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj12ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:00:45</pubDate>
	<description><![CDATA[The bidirectional TVS transient suppression diode packaged in this SMA is suitable for 12V systems and provides excellent bidirectional overvoltage protection. With a peak pulse current withstand capacity of up to 20.1A, it can quickly respond and accurately clamp under positive and negative voltage transients, effectively resist the impact of lightning strikes, surges, and electrostatic discharge on the circuit, and ensure stable operation of electronic equipment in high voltage fluctuation environments.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ12A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj12a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:00:34</pubDate>
	<description><![CDATA[This SMA packaged unidirectional TVS transient suppression diode is designed specifically for overvoltage protection in 12V voltage systems. Having excellent ability to withstand peak pulse current of 20.1A, it can instantly suppress abnormal high voltage, ensuring that the circuit is not affected by surges and transient voltage shocks. The fast response and efficient clamping characteristics make it an ideal protection choice for power lines, signal lines, and sensitive electronic devices, effectively ensuring stable system operation.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ11CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj11ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:00:23</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 22, voltage/V: 11, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101413     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ11A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj11a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:00:12</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 22, Voltage/V: 11, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101349     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ10CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj10ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 03:00:01</pubDate>
	<description><![CDATA[This SMA packaged bidirectional TVS transient suppression diode is suitable for 10V systems and has excellent bidirectional overvoltage protection performance. It can effectively handle peak pulse currents up to 23.5A, respond quickly and accurately clamp transient high voltage, providing excellent lightning protection, surge protection, and electrostatic discharge protection for circuits. Its compact size and high reliability design ensure stable operation of electronic devices in the face of transient events.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ10A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj10a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 02:59:51</pubDate>
	<description><![CDATA[This SMA packaged unidirectional TVS transient suppression diode is designed to provide strong overvoltage protection for 10V systems. Its outstanding performance is reflected in its ability to withstand peak pulse currents of up to 23.5A, which can instantly suppress abnormal voltage rise and effectively prevent circuit damage due to transient events such as surges and spikes. Fast response and high reliability design make it an ideal choice for power lines and protection of sensitive electronic devices, ensuring stable system operation.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ9.0CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj9-0ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 02:59:40</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 26, voltage/V: 9, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101400     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ9.0A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj9-0a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 02:59:29</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 26, Voltage/V: 9, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101363     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ8.5CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj8-5ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 02:59:18</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 27.8, voltage/V: 8.5, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101393     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ8.5A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj8-5a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 02:59:07</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 27.8, Voltage/V: 8.5, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101385     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ8.0CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj8-0ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 02:58:56</pubDate>
	<description><![CDATA[The bidirectional TVS transient suppression diode packaged in SMA is designed for efficient protection. This device has a rated breakdown voltage of 8V and a peak pulse current of up to 29.4A. It can instantly absorb surge energy and provide sub nanosecond response protection, effectively preventing overvoltage from causing damage to the circuit. It is an ideal choice for your circuit safety.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ8.0A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj8-0a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 02:58:45</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 29.4, Voltage/V: 8, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101351     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ7.5CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj7-5ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 02:58:34</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 31, voltage/V: 7.5, number of channels: 1, type: Bi bidirectional,     (Ordering Information):  Product Code: H101372     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ7.5A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj7-5a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 02:58:23</pubDate>
	<description><![CDATA[Product Category: ESD/TVS     Packing: SMA      Parameter Introduction:Current/A: 31, Voltage/V: 7.5, Number of Channels: 1, Type: Uni Unidirectional,     (Ordering Information):  Product Code: H101394     Minimum packaging: 2000pcs      Gross weight/gram :0.099g/pcs   ( If you need help, please click "Consult Now"）]]></description>
</item>
<item>
	<title><![CDATA[SMAJ7.0CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj7-0ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 02:58:13</pubDate>
	<description><![CDATA[This SMA packaged bidirectional TVS transient suppression diode provides excellent bidirectional overvoltage protection for 7V voltage systems. Equipped with a peak pulse current processing capability of up to 33.3A, it can quickly respond and accurately clamp the voltage under transient voltage in both positive and negative directions, effectively preventing damage to the circuit caused by lightning strikes, surges, and electrostatic discharge, ensuring stable operation of electronic equipment in high-voltage transient environments.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ7.0A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj7-0a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 02:58:02</pubDate>
	<description><![CDATA[This SMA packaged unidirectional TVS transient suppression diode provides excellent forward overvoltage protection for 7V systems. Equipped with a powerful peak pulse current IPP capability of 33.3A, it can quickly respond and clamp transient high voltage in the circuit, effectively preventing surge and transient events from causing damage to electronic equipment. It is especially suitable for high-power demand situations, such as instantaneous impact protection of power lines and signal interfaces.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ6.5CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj6-5ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 02:57:51</pubDate>
	<description><![CDATA[This high-performance bidirectional TVS transient suppression diode packaged in SMA is designed to provide strong overvoltage protection for 6.5V systems. Its outstanding performance is reflected in its ability to withstand peak pulse currents of up to 35.7A. It can quickly respond and effectively clamp under positive and negative voltage spikes, ensuring that electronic devices are not damaged by lightning strikes, electrostatic discharge, and power transients, ensuring stable and reliable circuit operation.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ6.5A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj6-5a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 02:57:40</pubDate>
	<description><![CDATA[This SMA packaged unidirectional TVS transient suppression diode is designed specifically for 6.5V systems, providing strong forward overvoltage protection. With a peak pulse current IPP carrying capacity of up to 35.7A, it can instantly respond to and clamp high voltage in circuits, effectively resist damage to electronic devices caused by surges and transient events, especially suitable for power lines and signal interface applications that require high-power transient protection.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ6.0CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj6-0ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 02:57:29</pubDate>
	<description><![CDATA[This SMA packaged bidirectional TVS transient suppression diode is designed to provide efficient bidirectional overvoltage protection for 6V systems. The device has an excellent ability to withstand a peak pulse current of 38.8A, quickly responding and accurately clamping under positive and negative voltage transients, effectively resisting high-energy impacts such as lightning strikes, surges, and static electricity, ensuring stable and safe operation of sensitive electronic devices under harsh conditions.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ6.0A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj6-0a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 02:57:18</pubDate>
	<description><![CDATA[This SMA packaged unidirectional TVS transient suppression diode is designed specifically for 6V systems and provides strong forward overvoltage protection. Equipped with a peak pulse current IPP capability of 38.8A, it can quickly respond to and clamp transient high voltage in circuits, effectively preventing surge and transient events from causing damage to electronic devices. It is especially suitable for high-power and power lines and signal interfaces that require strong transient protection performance.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ5.0CA(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj5-0ca-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 02:57:07</pubDate>
	<description><![CDATA[The high-performance bidirectional TVS transient suppression diode packaged in SMA is designed for efficient overvoltage protection. This device has a rated reverse working voltage of 5V VRWM and a peak pulse current IPP of up to 43.5A. It can instantly absorb abnormal high voltage, effectively protecting the circuit from surges and transient voltage damage, ensuring stable and reliable operation of the system.]]></description>
</item>
<item>
	<title><![CDATA[SMAJ5.0A(SMA)]]></title>
	<category domain="http://www.hxymos.com/en/esdbaohu/">ESD/TVS</category>
	<link><![CDATA[http://www.hxymos.com/en/esdbaohu/smaj5-0a-sma-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 02:56:56</pubDate>
	<description><![CDATA[This SMA packaged unidirectional TVS transient suppression diode is designed to provide strong overvoltage protection for 5V systems. Equipped with a peak pulse current IPP capability of 43.5A, it can quickly respond and clamp to a safe level when encountering forward transient high voltage in the circuit, effectively preventing damage to electronic equipment caused by surges and transients. It is suitable for excellent transient protection needs in high-power, high-speed interface and other occasions.]]></description>
</item>
<item>
	<title><![CDATA[BCP53(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bcp53-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:37:57</pubDate>
	<description><![CDATA[This SOT-89 package PNP type transistor has 80V high voltage VCEO and 1A high current carrying capacity, with an amplification range of 63 to 250. It is suitable for high voltage and high current electronic systems, providing reliable and efficient signal amplification and switch control functions.]]></description>
</item>
<item>
	<title><![CDATA[BCP55(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bcp55-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:37:47</pubDate>
	<description><![CDATA[This SOT-89 packaged NPN type transistor has a 60V high voltage VCEO and a strong collector current of 1A, with an amplification range of 63 to 250. It is suitable for switch and linear amplification circuit design in medium high voltage and high current application scenarios, and is a high-quality semiconductor component for your electronic equipment manufacturing and engineering projects.]]></description>
</item>
<item>
	<title><![CDATA[SS8050(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/ss8050-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:37:25</pubDate>
	<description><![CDATA[This high-performance NPN transistor packaged in SOT-89 has a 25V VCEO withstand voltage and a 1.5A collector current capability. Its amplification factor is stable in the range of 200 to 300, making it particularly suitable for high gain and medium current applications. It is an ideal semiconductor component for your electronic design and manufacturing.]]></description>
</item>
<item>
	<title><![CDATA[BCP55(SOT-223)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bcp55-sot-223-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:37:14</pubDate>
	<description><![CDATA[This SOT-223 packaged NPN transistor has a 60V high voltage VCEO and 1A collector current capability. Its amplification factor is adjustable in the range of 63 to 250, making it particularly suitable for medium voltage, high current switching, and linear amplification applications. It is an ideal semiconductor component for various electronic devices and circuit designs.]]></description>
</item>
<item>
	<title><![CDATA[SS8550(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/ss8550-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:37:03</pubDate>
	<description><![CDATA[This SOT-23 package PNP transistor has a 25V high voltage VCEO and a 0.5A collector current carrying capacity, with a stable amplification factor between 200 and 300. It is designed specifically for precision electronic equipment, providing efficient and stable signal amplification and switch control functions.]]></description>
</item>
<item>
	<title><![CDATA[SS8050(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/ss8050-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:36:52</pubDate>
	<description><![CDATA[This SOT-23 package NPN type transistor has a 25V high voltage VCEO and 1.5A high current processing capability, with a stable amplification factor in the range of 200 to 300. It is particularly suitable for electronic applications that require efficient and high current signal amplification.]]></description>
</item>
<item>
	<title><![CDATA[BCP53(SOT-223)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bcp53-sot-223-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:36:41</pubDate>
	<description><![CDATA[This SOT-223 package PNP type transistor has 80V high voltage VCEO and 1A collector current, with an amplification range of 63 to 250. It is suitable for switch and linear amplification circuit design in medium high voltage and high current environments, and is an important semiconductor component in industrial control, power management, and other fields.]]></description>
</item>
<item>
	<title><![CDATA[BCX56(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bcx56-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:36:30</pubDate>
	<description><![CDATA[The SOT-89 package is an NPN type transistor with 80V high voltage VCEO and 1A stable collector current. The amplification factor is adjustable in the range of 63 to 250, suitable for switch and linear amplification circuit design in high voltage and medium current application scenarios. It is the ideal choice for electronic engineers to develop high-performance equipment.]]></description>
</item>
<item>
	<title><![CDATA[B772(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/b772-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:36:20</pubDate>
	<description><![CDATA[The high-performance PNP transistor packaged in SOT-89 has 30V high voltage VCEO and 3A high current collector capacity, with a stable amplification factor between 160 and 320. It is suitable for high gain, high current switching, and linear amplification applications, making it a high-quality choice for your electronic design and manufacturing projects.]]></description>
</item>
<item>
	<title><![CDATA[D882(SOT-89)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/d882-sot-89-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:36:09</pubDate>
	<description><![CDATA[This SOT-89 packaged high-performance NPN transistor has 30V high voltage VCEO and 3A high current collector capacity, with an amplification range of 160 to 320. It is suitable for switching and linear amplification applications in medium voltage and high current environments, and is an ideal component for high-performance circuit design in electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BCP56(SOT-223)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bcp56-sot-223-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:35:58</pubDate>
	<description><![CDATA[The NPN type transistor packaged in SOT-223 has 80V high voltage VCEO and 1A collector current capability, with adjustable amplification factor between 63 and 250. It is suitable for switch and linear amplification circuit design in high voltage and high current environments, making it an ideal choice for various electronic devices and industrial control applications.]]></description>
</item>
<item>
	<title><![CDATA[S8550(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/s8550-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:35:47</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[S8050(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/s8050-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:35:36</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[S9013(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/s9013-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:35:25</pubDate>
	<description><![CDATA[The NPN type transistor packaged in SOT-23 has a 25V VCEO withstand voltage and a 0.5A collector current, with an amplification factor between 120 and 400. It is suitable for low-power and high gain applications, and is suitable for various precision electronic devices and circuit designs. It is an ideal semiconductor component in your miniaturization project.]]></description>
</item>
<item>
	<title><![CDATA[S9018(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/s9018-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:35:14</pubDate>
	<description><![CDATA[This SOT-23 package NPN type transistor has a 15V VCEO withstand voltage value and a 0.05A collector current specification, with an adjustable amplification factor between 70 and 200. It is designed for low voltage, micro current, and high-precision amplification applications, making it an ideal choice for small electronic devices and precision circuits.]]></description>
</item>
<item>
	<title><![CDATA[S9015(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/s9015-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:35:03</pubDate>
	<description><![CDATA[This SOT-23 packaged PNP transistor features a 45V high voltage VCEO and 0.1A collector current, with an amplification factor of up to 200 to 400. It is designed for precision amplification applications in medium voltage and micro current environments and is an ideal semiconductor component for small electronic devices and high gain circuits.]]></description>
</item>
<item>
	<title><![CDATA[S9014(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/s9014-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:34:52</pubDate>
	<description><![CDATA[This SOT-23 package NPN type transistor has a high breakdown voltage of 45V VCEO and a current carrying capacity of 0.1A collector. It has a wide amplification range (200-400) and is particularly suitable for electronic circuits that require high gain and low power consumption, providing precise signal amplification function.]]></description>
</item>
<item>
	<title><![CDATA[S9012(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/s9012-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:34:42</pubDate>
	<description><![CDATA[This SOT-23 package PNP type transistor has a high breakdown voltage of 25V VCEO and a collector current capacity of 0.5A, with an amplification range of 120 to 400. It is suitable for various low-power and precision signal amplification circuits, providing excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[MMBT5551(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mmbt5551-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:34:31</pubDate>
	<description><![CDATA[This SOT-23 package NPN type transistor has a 160V high voltage VCEO and 0.6A collector current capability, with adjustable amplification factor between 100 and 300. It is suitable for linear amplification and switching circuit design in high voltage and medium current environments, and is an ideal semiconductor device for electronic equipment and industrial control.]]></description>
</item>
<item>
	<title><![CDATA[MMBT5401(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mmbt5401-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:34:20</pubDate>
	<description><![CDATA[This SOT-23 package PNP type transistor has a 150V high voltage VCEO and a 0.6A collector current. The amplification factor is adjustable between 100 and 300, making it particularly suitable for switching and linear amplification applications in high voltage and medium current environments. It is an ideal semiconductor component for your precision electronic equipment and circuit design.]]></description>
</item>
<item>
	<title><![CDATA[MMBT4403(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mmbt4403-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:34:09</pubDate>
	<description><![CDATA[This SOT-23 packaged PNP transistor has a 40V high voltage VCEO and 0.6A collector current capability, with an amplification range of 100 to 300. It is suitable for efficient amplification and switching circuit design in medium voltage and high current environments, and is an ideal semiconductor component for electronic equipment and system integration.]]></description>
</item>
<item>
	<title><![CDATA[MMBT4401(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mmbt4401-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:33:58</pubDate>
	<description><![CDATA[This SOT-23 package NPN type transistor has a 40V high voltage VCEO and 0.6A collector current capability. The amplification factor can be adjusted in the range of 100 to 300, making it suitable for switch and linear amplification circuit design in medium voltage and medium current environments. It is an ideal semiconductor component for electronic equipment and system integration.]]></description>
</item>
<item>
	<title><![CDATA[MMBT3904(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mmbt3904-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:33:47</pubDate>
	<description><![CDATA[This SOT-23 packaged NPN transistor features a 40V high voltage VCEO and 0.2A collector current, with adjustable amplification factors between 100 and 300. It is designed for medium voltage, micro to low current applications and is an ideal semiconductor device for precision amplification and switching circuits.]]></description>
</item>
<item>
	<title><![CDATA[MMBT3906(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mmbt3906-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:33:36</pubDate>
	<description><![CDATA[This SOT-23 package PNP type transistor has a 40V high voltage VCEO and 0.2A collector current, with an adjustable amplification factor between 100 and 300. It is suitable for precision amplification and switching circuit design in medium voltage and micro current environments, making it an ideal semiconductor component for your electronic equipment project.]]></description>
</item>
<item>
	<title><![CDATA[MMBT2907A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mmbt2907a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:33:25</pubDate>
	<description><![CDATA[This SOT-23 package PNP type transistor has a 40V high voltage VCEO and 0.6A collector current capability, with adjustable amplification factor in the range of 100 to 300. It is designed for efficient amplification and switching circuits in medium voltage and medium current application environments, and is an ideal semiconductor component for various electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[MMBT2222A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mmbt2222a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:33:14</pubDate>
	<description><![CDATA[This SOT-23 package NPN type transistor has a 40V high voltage VCEO and 0.6A collector current, with an amplification factor of 100 to 300, suitable for switching and linear amplification applications in medium voltage and medium current environments. It is an ideal choice for electronic equipment manufacturing and circuit design.]]></description>
</item>
<item>
	<title><![CDATA[MMBTA44(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mmbta44-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:33:04</pubDate>
	<description><![CDATA[This high-performance NPN type transistor adopts a compact SOT-23 package, which is particularly suitable for modern precision circuit design. The device has an excellent collector emitter breakdown voltage (VCEO) of up to 350V and a continuous collector current (IC) of 0.2A, with amplification factors ranging from 50 to 200, ensuring strong signal processing capabilities. Suitable for various high voltage, medium and low current application environments, it is the ideal transistor solution for your electronic product design.]]></description>
</item>
<item>
	<title><![CDATA[MMBTA92(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mmbta92-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:32:53</pubDate>
	<description><![CDATA[This SOT-23 packaged PNP type transistor has an excellent VCEO withstand voltage of up to 300V and a collector current capacity of 0.2A. The amplification factor ranges from 100 to 200, making it particularly suitable for precision amplification and switching circuit design in high voltage, low to medium current application environments. It is the preferred component for your high-voltage electronic equipment project.]]></description>
</item>
<item>
	<title><![CDATA[MMBTA42(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mmbta42-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:32:42</pubDate>
	<description><![CDATA[This SOT-23 packaged NPN transistor has a 300V high voltage VCEO and 0.3A collector current capability, with adjustable amplification between 100 and 200. It is designed specifically for high voltage, low to medium current applications and is an ideal semiconductor component for your switch circuit and precision amplifier design.]]></description>
</item>
<item>
	<title><![CDATA[MMBTA06(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mmbta06-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:32:31</pubDate>
	<description><![CDATA[This SOT-23 package NPN type transistor has 80V high voltage VCEO and 0.5A collector current specifications. Its amplification factor can be adjusted between 100 and 400, making it suitable for precision amplification and switching applications in high voltage and medium current environments. It is an ideal semiconductor component for electronic device circuit design.]]></description>
</item>
<item>
	<title><![CDATA[MMBTA05(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mmbta05-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:32:20</pubDate>
	<description><![CDATA[This product is a high-performance NPN type transistor, packaged in a small SOT-23 package, suitable for various compact circuit designs. With a high collector emitter voltage withstand (VCEO) of 60V and a continuous current of 0.5A (IC), the amplification range is between 100 and 400, ensuring excellent signal amplification capability, making it an ideal driving choice for your electronic equipment.]]></description>
</item>
<item>
	<title><![CDATA[MMBTH10(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/mmbth10-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:32:09</pubDate>
	<description><![CDATA[This SOT-23 packaged NPN transistor has a 25V high voltage VCEO and 0.05A collector current specification, with an amplification factor between 100 and 200. It is designed for precision amplification and switching circuits in low voltage and micro current application environments and is the preferred semiconductor component for small electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BC807-40(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bc807-40-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:31:58</pubDate>
	<description><![CDATA[This SOT-23 package PNP type transistor features a 45V high voltage VCEO and a 0.5A collector current, providing an amplification factor of up to 250 to 600. It is suitable for efficient amplification applications in medium to high voltage and medium current environments and is an ideal choice for precision electronic equipment and circuit design.]]></description>
</item>
<item>
	<title><![CDATA[BC807-25(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bc807-25-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:31:47</pubDate>
	<description><![CDATA[This SOT-23 package PNP type transistor has a 45V high voltage VCEO and 0.5A collector current capability, with an adjustable amplification factor between 160 and 400. It is suitable for efficient amplification and switching circuit design in medium voltage and medium current application environments, and is an ideal semiconductor component for your electronic equipment project.]]></description>
</item>
<item>
	<title><![CDATA[BC817-40(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bc817-40-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:31:36</pubDate>
	<description><![CDATA[This SOT-23 package NPN type transistor has a 45V high voltage VCEO and a 0.5A collector current, with excellent amplification ability, with amplification factors of up to 250 to 600. It is particularly suitable for high gain amplification applications in medium voltage and medium current environments, and is an ideal choice for precision electronic circuit design.]]></description>
</item>
<item>
	<title><![CDATA[BC817-25(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bc817-25-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:31:26</pubDate>
	<description><![CDATA[This SOT-23 packaged NPN transistor has a 45V high voltage VCEO and 0.5A collector current capability, with an amplification range of 160 to 400. It is suitable for efficient amplification and switching applications in medium voltage and medium current environments, and is an ideal semiconductor device for electronic device design and manufacturing.]]></description>
</item>
<item>
	<title><![CDATA[BC817-16(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bc817-16-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:31:15</pubDate>
	<description><![CDATA[This SOT-23 package NPN type transistor has a 45V high voltage VCEO and a 0.5A collector current specification. The amplification factor can be adjusted between 100 and 600, making it particularly suitable for wide range gain amplification and switching applications in medium voltage and medium current environments. It is a high-quality semiconductor component designed for electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BC856B(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bc856b-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:31:04</pubDate>
	<description><![CDATA[This SOT-23 package PNP type transistor has a 65V high voltage VCEO and 0.1A collector current specification, with an amplification factor of up to 200 to 450. It is particularly suitable for high gain amplification applications in low voltage and micro current environments and is an ideal semiconductor component for precision electronic equipment and miniaturized circuit design.]]></description>
</item>
<item>
	<title><![CDATA[BC857B(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bc857b-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:30:53</pubDate>
	<description><![CDATA[This SOT-23 package PNP type transistor has a 45V high voltage VCEO and 0.1A collector current specification, with an amplification factor of up to 200 to 450. It is designed for high gain amplification and precision switching applications in medium voltage and micro current environments, and is an ideal semiconductor component for electronic device circuit construction.]]></description>
</item>
<item>
	<title><![CDATA[BC857A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bc857a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:30:42</pubDate>
	<description><![CDATA[This SOT-23 package PNP type transistor has a 45V high voltage VCEO and 0.1A collector current specification. The amplification factor is adjustable between 110 and 220, especially suitable for precision amplification and switching circuit design in medium voltage and low current environments. It is a high-quality semiconductor component for small electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BC848B(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bc848b-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:30:31</pubDate>
	<description><![CDATA[This SOT-23 package NPN type transistor has a 30V withstand voltage VCEO and 0.1A collector current, with an amplification factor of up to 200 to 450. It is designed for high gain amplification applications in low voltage and micro current environments and is an ideal semiconductor component for precision electronic equipment and miniaturized circuits.]]></description>
</item>
<item>
	<title><![CDATA[BC848A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bc848a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:30:20</pubDate>
	<description><![CDATA[This SOT-23 packaged NPN transistor has a 30V high voltage VCEO and 0.1A collector current specification, with an amplification factor between 110 and 220. It is designed for precision amplification and switching circuits in low voltage and micro current environments, and is an ideal semiconductor component for small electronic devices and high-precision applications.]]></description>
</item>
<item>
	<title><![CDATA[BC847B(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bc847b-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:30:09</pubDate>
	<description><![CDATA[This SOT-23 package NPN type transistor has a 45V high voltage VCEO and 0.1A collector current specification, with an amplification factor of up to 200 to 450. It is designed for high gain amplification applications in medium voltage and micro current environments and is an ideal semiconductor component for precision electronic equipment and circuits.]]></description>
</item>
<item>
	<title><![CDATA[BC847A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bc847a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:29:59</pubDate>
	<description><![CDATA[This SOT-23 packaged NPN transistor has a 45V high voltage VCEO and 0.1A collector current, with an amplification factor in the range of 110 to 220. It is particularly suitable for precision amplification and switching circuit design in medium voltage and low current application environments, and is an ideal semiconductor component for small electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[BC846B(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bc846b-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:29:48</pubDate>
	<description><![CDATA[This NPN type transistor adopts a compact SOT-23 package, suitable for circuit design with limited space. The device has a high collector emitter breakdown voltage (VCEO) of 65V and a continuous collector current (IC) of 0.1A, with amplification factors ranging from 200 to 450, providing powerful and accurate signal amplification capabilities. Suitable for various medium to high voltage and low current application scenarios, it is the high-quality transistor choice for your electronic project.]]></description>
</item>
<item>
	<title><![CDATA[BC846A(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/bc846a-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:29:37</pubDate>
	<description><![CDATA[This SOT-23 package NPN type transistor has a 65V high voltage VCEO and 0.1A collector current, with an adjustable amplification factor between 110 and 220. It is designed for precision amplification and switching applications in medium voltage and micro current environments and is an ideal semiconductor component for small electronic devices and high-precision circuits.]]></description>
</item>
<item>
	<title><![CDATA[2SC3356(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/2sc3356-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:29:26</pubDate>
	<description><![CDATA[This NPN type transistor adopts a small SOT-23 package and is designed for efficient space utilization. The device has a collector emitter breakdown voltage (VCEO) of 11V and a continuous collector current (IC) of 0.1A, with amplification factors ranging from 50 to 250, providing stable signal amplification performance. Suitable for various low voltage and low current electronic applications, it is the ideal transistor choice for your circuit design.]]></description>
</item>
<item>
	<title><![CDATA[2SC2712(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/2sc2712-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:29:15</pubDate>
	<description><![CDATA[This SOT-23 packaged NPN transistor has a 50V high voltage VCEO and 0.15A collector current specification. Its amplification factor can be adjusted between 70 and 700, making it suitable for precision amplification circuit design in various voltage and low current application environments. It is an ideal semiconductor component for electronic engineers.]]></description>
</item>
<item>
	<title><![CDATA[2SC1623(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/2sc1623-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:29:04</pubDate>
	<description><![CDATA[This SOT-23 package NPN type transistor has a 50V high voltage VCEO and 0.1A collector current capability. Its amplification factor is wide and adjustable (90-600), designed for high gain amplification and switching applications in medium voltage and small current environments. It is an ideal semiconductor component for precision electronic equipment and circuits.]]></description>
</item>
<item>
	<title><![CDATA[2SA1015(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/2sa1015-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:28:53</pubDate>
	<description><![CDATA[This SOT-23 package PNP type transistor has a 50V high voltage VCEO and 0.15A collector current, with an amplification factor in the range of 130 to 400. It is suitable for precision amplification and switching applications in medium high voltage and low current environments, and is an ideal semiconductor component for electronic equipment and circuit design.]]></description>
</item>
<item>
	<title><![CDATA[2SC1815(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/2sc1815-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:28:42</pubDate>
	<description><![CDATA[This SOT-23 package NPN type transistor has a 50V high voltage VCEO and 0.15A collector current capability. Its amplification factor is adjustable in a wide range (70-700), suitable for flexible gain amplification applications in medium voltage and low current environments. It is the preferred component for various electronic devices and precision circuit designs.]]></description>
</item>
<item>
	<title><![CDATA[C945(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/c945-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:28:32</pubDate>
	<description><![CDATA[This SOT-23 package NPN type transistor has a 50V high voltage VCEO and 0.15A collector current, with a wide amplification factor (130-400), especially suitable for precision and low-power electronic systems, providing highly adjustable signal amplification performance.]]></description>
</item>
<item>
	<title><![CDATA[2SC945(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/2sc945-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:28:21</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[13001(SOT-23)]]></title>
	<category domain="http://www.hxymos.com/en/transistor/">Transistor</category>
	<link><![CDATA[http://www.hxymos.com/en/transistor/13001-sot-23-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-01 01:28:10</pubDate>
	<description><![CDATA[This SOT-23 package NPN type transistor has a 420V ultra-high voltage VCEO and 0.2A collector current, making it particularly suitable for switching and low gain amplification applications in high-voltage environments. Its amplification factor is between 18 and 30, making it an ideal semiconductor component for high voltage and micro current electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[SD103AWS]]></title>
	<category domain="http://www.hxymos.com/en/discount-products/">Discount products</category>
	<link><![CDATA[http://www.hxymos.com/en/discount-products/sd103aws.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-10-14 05:39:27</pubDate>
	<description><![CDATA[Due to the optimistic estimation of the production plan, the current inventory level is high, so the discount is 10% off for the limited time. If you are interested, please take a screenshot of this page and contact our salesperson. The following is the product information:：
SD103AWS   SCHOTTKY BARRIER RECTIFIER  Package:SOD-323  VR/40V  IF/0.35A   VF/0.6V   IFSM/ 2A   IR/ 5uA ]]></description>
</item>
<item>
	<title><![CDATA[HXY2300MI]]></title>
	<category domain="http://www.hxymos.com/en/discount-products/">Discount products</category>
	<link><![CDATA[http://www.hxymos.com/en/discount-products/hxy2300mi.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-10-14 05:38:55</pubDate>
	<description><![CDATA[Due to the optimistic estimation of the production plan, the current inventory level is high, so the discount is 10% off for the limited time. If you are interested, please take a screenshot of this page and contact our salesperson. The following is the product information:：
HXY2300MI    Enhancement Mode MOSFET    Package/SOT-23-3L   VGS/12V  ID/6A  RDon/22mR  VGS(th)/0.5-1.0V    VDS/20V   Type/N-Channel]]></description>
</item>
<item>
	<title><![CDATA[Product Selection Table]]></title>
	<category domain="http://www.hxymos.com/en/download/">Download</category>
	<link><![CDATA[http://www.hxymos.com/en/download/product-selection-table.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-10-14 05:36:30</pubDate>
	<description><![CDATA[]]></description>
</item>

<item>
	<title><![CDATA[How can we manage the team well? How to make employees listen?]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/how-can-we-manage-the-team-well-how-to-make-employees-listen-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2021-09-06 05:34:27</pubDate>
	<description><![CDATA[How can we manage the team well? How to make employees listen?

How to make employees listen? Is this the right direction? If the management team tries to make employees more obedient every day, the result must be full of internal friction and loss of creativity. Because the post-95 and post-00 employees are creative, energetic and talented; They do not like oppression and control; They will resist, they will be unable to adapt, and they will feel no sense of happiness. What‘s worse, in a team that emphasizes obedience, managers will easily manage employees according to their likes and dislikes and emotions, rather than following a specific principle.
]]></description>
</item>
<item>
	<title><![CDATA[Management needs philosophy]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/management-needs-philosophy.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2021-09-07 10:53:29</pubDate>
	<description><![CDATA[Sincerity: The current is as big as it is, and what it is is what it is. Do not hide, do not cheat, and be absolutely sincere

Altruism: retain customers with value, win customers with value, not just by price war or entertainment

Youai: We are willing to share our progress with customers, and we also hope customers will become better

Win win: Win win is the guiding ideology of division, distribution and cooperation. Win win can be strong and lasting]]></description>
</item>
<item>
	<title><![CDATA[Keep doing a good job of replacing imported brands]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/keep-doing-a-good-job-of-replacing-imported-brands.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2021-09-07 10:57:32</pubDate>
	<description><![CDATA[In recent years, in fact, is the trend of localization with our development, or strictly speaking, we struggle to run, just barely not abandoned by this trend of the times. I think, to continue to do a good job“Replace imported brand MOS tube, help customers to achieve localization” this thing, to grasp the trend to our opportunities]]></description>
</item>
<item>
	<title><![CDATA[Understand Hua Xuanyang（HXYMOS）]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/understand-hua-xuanyang（hxymos）.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2021-09-07 10:58:58</pubDate>
	<description><![CDATA[Huaxuanyang is a domestic original manufacturer with MOSFET (field effect transistor) as the core, continuous research and development and mass production of lower energy consumption, higher power density, smaller volume, more close to the customer needs of products.The brand name is "HXY MOSFET".Our mission is to "strive for the rise of Chinese chips", which is also our original intention to create this brand, and we will spare no effort to promote the localization of power devices.]]></description>
</item>
<item>
	<title><![CDATA[Statement on Tort September 2021]]></title>
	<category domain="http://www.hxymos.com/en/announcement/">Announcement</category>
	<link><![CDATA[http://www.hxymos.com/en/announcement/statement-on-tort-september-2021.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2021-09-07 11:00:44</pubDate>
	<description><![CDATA[Recently, during the business negotiation, our staff found that the relevant enterprises and individuals, without our permission, took advantage of Internet loopholes and titled "Shenzhen Huaxuan Yang Electronics Co., Ltd. Shareholder Branch Ion Company" on the Internet, attracting people‘s attention and attention. We hereby make a solemn statement that our company has suffered heavy reputation and economic losses due to its bad behavior:]]></description>
</item>
<item>
	<title><![CDATA[Create a good working atmosphere]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/create-a-good-working-atmosphere.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2021-09-07 11:03:27</pubDate>
	<description><![CDATA[Recently, huijin hopson (Beijing) investment management co., LTD., won the China electronic commerce association awarded the certificate of the China electricity council, by the China electronic commerce association electricity council member units. Marking the company operating the Internet information platform of investment and financing, hopson, received the affirmation of electricity industry. ]]></description>
</item>
<item>
	<title><![CDATA[Keep making progress, do difficult things -- Hua Xuanyang general manager Lai Zhuguang]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/keep-making-progress-do-difficult-things--hua-xuanyang-general-manager-lai-zhuguang.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2021-09-07 11:26:48</pubDate>
	<description><![CDATA[No matter how bad the environment will have opportunities, the recent environment is not good, it is good to maintain a proper sense of crisis, not too much into the hands and feet tied after anxiety. The right things to do, the right internal skills to practice, the money to invest or invest, to keep improving, even if the bad environment will have a chance. If not, it has not been found for the time being. In addition, the best time to test the company/team in a bad environment is to expose the problem, not for fear of not being abl]]></description>
</item>
<item>
	<title><![CDATA[Engineering support and Marketing dept]]></title>
	<category domain="http://www.hxymos.com/en/company-overview/">Company Profile</category>
	<link><![CDATA[http://www.hxymos.com/en/company-profile/engineering-support-and-marketing-dept.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2021-09-10 04:28:04</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[Design Dept]]></title>
	<category domain="http://www.hxymos.com/en/company-overview/">Company Profile</category>
	<link><![CDATA[http://www.hxymos.com/en/company-profile/design-dept.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2021-09-10 04:30:02</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[Project Management Dept]]></title>
	<category domain="http://www.hxymos.com/en/company-overview/">Company Profile</category>
	<link><![CDATA[http://www.hxymos.com/en/company-profile/project-management-dept.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2021-09-10 04:32:06</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[Manufacture Dept]]></title>
	<category domain="http://www.hxymos.com/en/company-overview/">Company Profile</category>
	<link><![CDATA[http://www.hxymos.com/en/company-profile/manufacture-dept.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2021-09-10 04:33:31</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[Inspection Dept]]></title>
	<category domain="http://www.hxymos.com/en/company-overview/">Company Profile</category>
	<link><![CDATA[http://www.hxymos.com/en/company-profile/inspection-dept.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2021-09-10 04:35:07</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[Assemble Dept]]></title>
	<category domain="http://www.hxymos.com/en/company-overview/">Company Profile</category>
	<link><![CDATA[http://www.hxymos.com/en/company-profile/assemble-dept.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2021-09-10 04:36:10</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[Mold Trial Dept]]></title>
	<category domain="http://www.hxymos.com/en/company-overview/">Company Profile</category>
	<link><![CDATA[http://www.hxymos.com/en/company-profile/mold-trial-dept.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2021-09-10 04:37:11</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[Mold Trial Dept]]></title>
	<category domain="http://www.hxymos.com/en/company-overview/">Company Profile</category>
	<link><![CDATA[http://www.hxymos.com/en/company-profile/mold-trial-dept.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2021-09-10 04:38:24</pubDate>
	<description><![CDATA[]]></description>
</item>
<item>
	<title><![CDATA[Recruitment of Software Engineer - Maintenance and Upgrade of Digital Management System]]></title>
	<category domain="http://www.hxymos.com/en/recruitment/">Recruitment</category>
	<link><![CDATA[http://www.hxymos.com/en/recruitment/recruitment-of-software-engineer--maintenance-and-upgrade-of-digital-management-system.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-09-20 09:01:57</pubDate>
	<description><![CDATA[We are looking for a passionate and experienced software engineer to join our dynamic team, responsible for maintaining and upgrading digital management systems. As a software engineer, you will play a crucial role in the digital transformation of Huaxuan Yang Electronics, providing the company with an efficient management system to support sustained business growth.

]]></description>
</item>
<item>
	<title><![CDATA[Provide excellent power device products and comprehensive professional technical services to help customers improve efficiency and competitiveness]]></title>
	<category domain="http://www.hxymos.com/en/technical-support/">Technical Support</category>
	<link><![CDATA[http://www.hxymos.com/en/technical-support/provide-excellent-power-device-products-and-comprehensive-professional-technical-services-to-help-customers-improve-efficiency-and-competitiveness.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-10-14 03:29:46</pubDate>
	<description><![CDATA[【HXY MOSFET】the technical services provided by Huaxuan Yang Electronics include but are not limited to: detailed product selection guidance, recommending the most suitable power device products based on the actual application scenarios and needs of customers; Professional technical support and consultation, in-depth interpretation of the product‘s working principle, functional characteristics, operating methods, etc., to ensure that customers can accurately understand and operate proficiently; Timely troubleshooting and repair services, once customers encounter problems during use, we will respond promptly, quickly locate and solve the problem; At the same time, we will also hold regular technical training seminars to share industry trends and technological development trends, help customers improve their technical level, and better utilize our power device products.]]></description>
</item>
<item>
	<title><![CDATA[Accurately and comprehensively evaluating the quality of products provided by different suppliers is crucial, and we provide testing services]]></title>
	<category domain="http://www.hxymos.com/en/testing-sample/">testing sample</category>
	<link><![CDATA[http://www.hxymos.com/en/testing-sample/accurately-and-comprehensively-evaluating-the-quality-of-products-provided-by-different-suppliers-is-crucial-and-we-provide-testing-services.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-10-14 03:30:44</pubDate>
	<description><![CDATA[As a core component in electronic devices and power systems, the performance and quality of power devices are directly related to the overall operational efficiency, stability, and lifespan of the equipment. Therefore, selecting high-quality power device suppliers is crucial for any enterprise or project. Our free power device testing service is designed to help you obtain detailed and accurate product performance data during the procurement decision-making process, so as to make wise and cost-effective procurement decisions, and avoid risks such as equipment failure, production stagnation, and economic losses caused by purchasing inferior power devices.]]></description>
</item>
<item>
	<title><![CDATA[Huaxuan Yang Electronics: With efficient after-sales service, we ensure the stable operation of power devices and assist customers in smooth production]]></title>
	<category domain="http://www.hxymos.com/en/after-sales-service/">After-sale service</category>
	<link><![CDATA[http://www.hxymos.com/en/after-sales-service/huaxuan-yang-electronics-with-efficient-after-sales-service-we-ensure-the-stable-operation-of-power-devices-and-assist-customers-in-smooth-production.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-10-14 03:31:26</pubDate>
	<description><![CDATA[When you are developing new solutions for sample testing or mass production, and choose power devices from 【HXY MOSFET】if you encounter any unknown faults or abnormal performance, we solemnly promise that you only need to provide feedback to us as soon as possible, and our professional technical team will respond quickly and provide necessary assistance within 24 hours, in order to help you restore normal production order as soon as possible. Moreover, we will further ensure that a detailed and professional fault analysis report is submitted within 48 hours of problem feedback, ensuring that you have a comprehensive understanding of the problem and providing strong support for subsequent problem resolution and production plan adjustments.]]></description>
</item>
<item>
	<title><![CDATA[Huaxianyang supply chain, easy procurement of millions of products]]></title>
	<category domain="http://www.hxymos.com/en/bom-table-distribution/">BOM table distribution</category>
	<link><![CDATA[http://www.hxymos.com/en/bom-table-distribution/huaxianyang-supply-chain-easy-procurement-of-millions-of-products.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-10-14 03:51:18</pubDate>
	<description><![CDATA[One-stop shop we provide a complete set of services, so that you can quickly and easily through us to find all the components you need in the bill of material (Bom) , in 24 hours to get a full set of prices and supply situation, the process of moving the project forward has greatly increased efficiency.

Quality Assurance in the supply chain of all suppliers manufacturing qualifications, sales qualifications are Hua Xuanyang quality team systematic evaluation and real-time monitoring, perfect supplier evaluation process and incoming inspection process to ensure that your quality]]></description>
</item>
<item>
	<title><![CDATA[Recruiting Administrative Assistant/Front Desk]]></title>
	<category domain="http://www.hxymos.com/en/recruitment/">Recruitment</category>
	<link><![CDATA[http://www.hxymos.com/en/recruitment/recruiting-administrative-assistant-front-desk.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-10-17 09:51:33</pubDate>
	<description><![CDATA[We are looking for a dynamic and responsible administrative assistant/front desk to join our team. As an administrative assistant/front desk representative, you will be responsible for receiving visitors, handling administrative affairs, and assisting with various tasks in the office. This is a key position that provides efficient support for the company, and we look forward to finding an excellent candidate who can grow together with us.
]]></description>
</item>
<item>
	<title><![CDATA[Gain meaningful relationships:]]></title>
	<category domain="http://www.hxymos.com/en/working-at-huayangxuan/">Working at Huayangxuan</category>
	<link><![CDATA[http://www.hxymos.com/en/working-at-huayangxuan/gain-meaningful-relationships-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-11-04 03:37:31</pubDate>
	<description><![CDATA[You will certainly like the people around you to keep sincere with you at all times, remind you to continue, bad adjustment, whether it is to continue or adjust can give you some feasible suggestions. You will also like the people around you to help you when you need help, help you face trouble, deal with trouble, and achieve success. This is a meaningful interpersonal relationship created under the values of "sincerity, altruism, love and win-win" jointly followed by the Huaxuan Yang team.....<br/>
Join us now. You can browse our recruitment content and send your resume to our mailbox]]></description>
</item>
<item>
	<title><![CDATA[Make the most of your talent:]]></title>
	<category domain="http://www.hxymos.com/en/working-at-huayangxuan/">Working at Huayangxuan</category>
	<link><![CDATA[http://www.hxymos.com/en/working-at-huayangxuan/make-the-most-of-your-talent-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-11-04 03:36:13</pubDate>
	<description><![CDATA[We pursue an extremely flat organizational structure, and we give the command to our trusted colleagues. That is to say, if you have credibility in a certain field and have to manage the team to verify, we will give you the command of the field, so that you can mobilize all the necessary resources to achieve the goal. And credibility has nothing to do with how long you have been on the team< br/>
In addition, regular business data and daily "Today‘s Observation" reports of senior managers can let you know the overall situation of the company and make you more clear how to combine your work and give full play to your talents.]]></description>
</item>
<item>
	<title><![CDATA[Gain a qualified leader:]]></title>
	<category domain="http://www.hxymos.com/en/working-at-huayangxuan/">Working at Huayangxuan</category>
	<link><![CDATA[http://www.hxymos.com/en/working-at-huayangxuan/gain-a-qualified-leader-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-10-17 03:36:25</pubDate>
	<description><![CDATA[We require that the main responsibility of a leader is to "hold up" rather than "control". When you take the task, he needs to think and act on how to help you achieve your goals. He needs to give you necessary training and assistance from time to time. In addition, when you feel that the arrangements he has given you are inappropriate, you can raise your doubts and have the right to discuss and formulate work plans with him again.]]></description>
</item>
<item>
	<title><![CDATA[Use your strengths:]]></title>
	<category domain="http://www.hxymos.com/en/working-at-huayangxuan/">Working at Huayangxuan</category>
	<link><![CDATA[http://www.hxymos.com/en/working-at-huayangxuan/use-your-strengths-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-10-17 03:35:03</pubDate>
	<description><![CDATA[Which is easier to succeed? We think it is the latter, because a person who has no shortcomings is equal to having no characteristics, and it is a kind of characteristics to give full play to his strengths, which is easier to succeed. In addition, it is relatively easier to achieve a new height by giving full play to your strengths. In Huaxuan Yang, you will have the opportunity to find your own strengths, find complementary partners, and create proud and fruitful results together. It is not only your own business, but also your boss‘s important responsibility to play your strengths.]]></description>
</item>
<item>
	<title><![CDATA[Work your way:]]></title>
	<category domain="http://www.hxymos.com/en/working-at-huayangxuan/">Working at Huayangxuan</category>
	<link><![CDATA[http://www.hxymos.com/en/working-at-huayangxuan/work-your-way-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-10-17 03:33:28</pubDate>
	<description><![CDATA[Hua Xuanyang is a team mainly composed of young people in their early 20s, full of vitality and informal. We hardly establish any system to restrict employees‘ behaviors, because we believe that the system will curb employees‘ creativity. Therefore, we use culture and values as our behavioral principles to encourage employees to give play to their nature and creativity and act in their own way.]]></description>
</item>
<item>
	<title><![CDATA[Work with interesting people：]]></title>
	<category domain="http://www.hxymos.com/en/working-at-huayangxuan/">Working at Huayangxuan</category>
	<link><![CDATA[http://www.hxymos.com/en/working-at-huayangxuan/work-with-interesting-people：.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-10-17 03:29:49</pubDate>
	<description><![CDATA[The reason why we put forward such a request is that according to our own experience, such people are the most creative and conform to the company culture. You can imagine that after joining us, they will work together with such a group of colleagues and work happily. At the same time, it is difficult to be more excellent than now]]></description>
</item>
<item>
	<title><![CDATA[Recruitment of Application Engineer - Power Device Solution Field]]></title>
	<category domain="http://www.hxymos.com/en/recruitment/">Recruitment</category>
	<link><![CDATA[http://www.hxymos.com/en/recruitment/recruitment-of-application-engineer--power-device-solution-field.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-10-17 03:39:41</pubDate>
	<description><![CDATA[As an application engineer, you will play a crucial role in the dynamic team of Huaxuan Yang Electronics. Your main responsibility is to work closely with customers, understand their needs, and provide them with the best power device solutions. You will work closely with the internal team to ensure that our products meet the technical and performance standards of our customers.]]></description>
</item>
<item>
	<title><![CDATA[Domestic power devices: replace imported ones very well]]></title>
	<category domain="http://www.hxymos.com/en/import-substitution-is-good/">Import substitution</category>
	<link><![CDATA[http://www.hxymos.com/en/import-substitution-is-good/domestic-power-devices-replace-imported-ones-very-well.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-11-05 12:32:02</pubDate>
	<description><![CDATA[【HXY MOSFET】On the premise of ensuring equal parameter performance, our alternative product solutions are committed to significantly reducing your cost expenses, with a maximum cost savings of up to 50%. This groundbreaking replacement plan not only ensures that your equipment maintains world-class quality, but also helps you with budget control, thereby enhancing your market competitiveness and profitability.]]></description>
</item>
<item>
	<title><![CDATA[PD Adapter]]></title>
	<category domain="http://www.hxymos.com/en/charging/">charging</category>
	<link><![CDATA[http://www.hxymos.com/en/charging/pd-adapter.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-11-09 04:58:15</pubDate>
	<description><![CDATA[HXYMOS  Applications Charging speed is very fast, can support 5V, 9V, 12V, 15V, 20V and other multi-stage voltage, and according to the needs of mobile phones, tablets, laptops and other devices to intelligent matching voltage. In other words, mobile phones, tablets, laptops and all digital devices can be a universal charging head, which undoubtedly greatly facilitate the daily use of users]]></description>
</item>
<item>
	<title><![CDATA[USB-TYPE-C AC/DC Charger]]></title>
	<category domain="http://www.hxymos.com/en/charging/">charging</category>
	<link><![CDATA[http://www.hxymos.com/en/charging/usb-type-c-ac-dc-charger.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-11-09 05:03:15</pubDate>
	<description><![CDATA[HXYMOS  Applications The USB power (PD) architecture is ideal for end-to-end power support and allows fast charging through the device‘s USB port. USB PD is not limited to USB battery charging, it allows up to 100W charging, power support, and role switching for system power optimization. The connectors provide a voltage range of 5.0 V (2.0 A for handheld and wearable devices) to 20 V (5.0 A for ultrabooks)]]></description>
</item>
<item>
	<title><![CDATA[Wireless charging]]></title>
	<category domain="http://www.hxymos.com/en/charging/">charging</category>
	<link><![CDATA[http://www.hxymos.com/en/charging/wireless-charging.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-11-09 05:06:23</pubDate>
	<description><![CDATA[HXYMOS  Applications Electronics must be able to charge quickly.]]></description>
</item>
<item>
	<title><![CDATA[USB-TYPE-C interface]]></title>
	<category domain="http://www.hxymos.com/en/charging/">charging</category>
	<link><![CDATA[http://www.hxymos.com/en/charging/usb-type-c-interface.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-11-09 05:07:42</pubDate>
	<description><![CDATA[HXYMOS  Applications Mobile phones and tablets have become integrated into every aspect of our lives, becoming indispensable tools for our access to information, communication, entertainment and a range of services from banking to calorie counting, with the Type-C interface enabling fast and secure data transfer]]></description>
</item>
<item>
	<title><![CDATA[AR/VR glasses]]></title>
	<category domain="http://www.hxymos.com/en/consumer-electronics/">Consumer Electronics</category>
	<link><![CDATA[http://www.hxymos.com/en/consumer-electronics/ar-vr-glasses.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-11-09 05:09:03</pubDate>
	<description><![CDATA[HXYMOS  Applications The ‘reality‘ of augmented reality (AR) or virtual reality (VR) glasses is really the need for efficient devices. Our product portfolio not only provides this capability, but also includes low-power and space-saving packaging.”]]></description>
</item>
<item>
	<title><![CDATA[Bluetooth headset]]></title>
	<category domain="http://www.hxymos.com/en/consumer-electronics/">Consumer Electronics</category>
	<link><![CDATA[http://www.hxymos.com/en/consumer-electronics/bluetooth-headset.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-11-09 05:10:29</pubDate>
	<description><![CDATA[HXYMOS  Applications Wireless Bluetooth headsets are one of the smallest applications in mobile devices. It is designed to incorporate as many devices as possible in a super-small profile, which requires them to consume less power, provide better audio, and even include noise cancellation and bio-monitoring functions. In addition to these features, it is also required to ensure a long battery life. “Our ultra-small wafer-level packages can help you provide the functionality you need for consumer electronics.”]]></description>
</item>
<item>
	<title><![CDATA[Smart Watch/Fitness GPS]]></title>
	<category domain="http://www.hxymos.com/en/consumer-electronics/">Consumer Electronics</category>
	<link><![CDATA[http://www.hxymos.com/en/consumer-electronics/smart-watch-fitness-gps.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-11-09 05:11:55</pubDate>
	<description><![CDATA[HXYMOS  Applications While our smartphones generally offer maps and GPS tracking options, sometimes a dedicated GPS tracker is the better option -- especially for hikers and others in remote areas, accurate location data is crucial. Whether it‘s a handheld device or a wearable device, these devices are increasingly integrated with a variety of functions -- including navigation, routing, real-time route tracking, and topographic maps]]></description>
</item>
<item>
	<title><![CDATA[E-cigarettes]]></title>
	<category domain="http://www.hxymos.com/en/consumer-electronics/">Consumer Electronics</category>
	<link><![CDATA[http://www.hxymos.com/en/consumer-electronics/e-cigarettes.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-11-09 05:13:16</pubDate>
	<description><![CDATA[HXYMoS  Applications E-cigarette smoking: through the extraction of beneficial to the human body of vegetable oil as a smoky oil, into the main by the electronic atomizer and the device composed of battery smoking. In the process of smoking, through heating the process of atomization of electronic fume oil, and atomization is through the instantaneous high-current high-power to achieve.]]></description>
</item>
<item>
	<title><![CDATA[Network set top box]]></title>
	<category domain="http://www.hxymos.com/en/consumer-electronics/">Consumer Electronics</category>
	<link><![CDATA[http://www.hxymos.com/en/consumer-electronics/network-set-top-box.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-11-09 05:14:43</pubDate>
	<description><![CDATA[HXYMOS  Applications A device similar in shape to a home broadband cat, through which the network can be connected to the television, as long as the home has an installed network cable, and is in use, as long as a network cable is separated from the router and plugged into this network set-top box, it can be broadcast online on demand, broadcast live online, and search online for various domestic satellite TV stations, encryption stations, and overseas movie stations. It is of great viewing value, easy to use and cheap, very suitable for satellite TV interference areas, rural areas.]]></description>
</item>
<item>
	<title><![CDATA[Solid State drives (ssds)]]></title>
	<category domain="http://www.hxymos.com/en/consumer-electronics/">Consumer Electronics</category>
	<link><![CDATA[http://www.hxymos.com/en/consumer-electronics/solid-state-drives-ssds-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-11-09 05:16:03</pubDate>
	<description><![CDATA[HXYMOS  Applications Solid-state drives (ssds) are fast becoming the preferred storage medium. They offer many significant advantages over mechanical hard drives (hdds) , including faster startup times and data movement. They are also getting smaller and more efficient. An efficient PMU can provide more stable voltage rails for NAND and FLASH memory cells, thus reducing error rewrites.]]></description>
</item>
<item>
	<title><![CDATA[Motor Control Drive]]></title>
	<category domain="http://www.hxymos.com/en/mobile-and-wearable-applications/">Motor</category>
	<link><![CDATA[http://www.hxymos.com/en/mobile-and-wearable-applications/motor-control-drive.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-11-09 05:17:33</pubDate>
	<description><![CDATA[HXYMOS  Applications Cordless devices are rapidly replacing consumer electronics and industrial equipment powered by a variety of primary sources, from power tools to vacuum cleaners, thanks to the rise of powerful motors powered by fast-rechargeable heavy-duty lithium batteries. According to the requirements of UL2595 and other new standards, with the increase of power, the security requirements are also increased. OUR MOSFET delivers both the power and the package you need, while providing excellent security.]]></description>
</item>
<item>
	<title><![CDATA[Power Tools]]></title>
	<category domain="http://www.hxymos.com/en/mobile-and-wearable-applications/">Motor</category>
	<link><![CDATA[http://www.hxymos.com/en/mobile-and-wearable-applications/power-tools.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-11-09 05:18:57</pubDate>
	<description><![CDATA[HXYMOS  Applications Power tools the most common type of power tool uses a motor. Electric tools are used for industrial, construction, garden, cooking, cleaning and other household tasks, and around the house for driving (fasteners) , drilling, cutting, molding, grinding, grinding, wiring, polishing, paint, heating and so on.]]></description>
</item>
<item>
	<title><![CDATA[Power Tools]]></title>
	<category domain="http://www.hxymos.com/en/mobile-and-wearable-applications/">Motor</category>
	<link><![CDATA[http://www.hxymos.com/en/mobile-and-wearable-applications/power-tools.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-11-09 05:20:22</pubDate>
	<description><![CDATA[HXYMOS  Applications Electric bicycle built-in integrated motor and rechargeable batteries, is a zero-emission environment-friendly vehicles. They need lightweight systems to reduce weight, improve comfort and increase electrical efficiency. Power devices are very important. By improving electronic efficiency, e-bikes can travel farther with the same weight of the battery, or the same distance with a smaller battery pack. Thin and spatially optimized designs with high power densities are essential to support advanced concepts.]]></description>
</item>
<item>
	<title><![CDATA[Uavs]]></title>
	<category domain="http://www.hxymos.com/en/mobile-and-wearable-applications/">Motor</category>
	<link><![CDATA[http://www.hxymos.com/en/mobile-and-wearable-applications/uavs.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-11-09 05:24:03</pubDate>
	<description><![CDATA[HXYMOS  Applications It comes in all shapes and sizes. One of the more common designs is the four-rotor UAV, which consists of a flight controller module and four independent electronic speed controllers (escs) for propeller control. These vehicles typically use battery-powered BLDC motors, each driven by six mosfets, and can be recharged using a USB connector.]]></description>
</item>
<item>
	<title><![CDATA[Industrial Power Supply (PSU)]]></title>
	<category domain="http://www.hxymos.com/en/automobile/">Industry</category>
	<link><![CDATA[http://www.hxymos.com/en/automobile/industrial-power-supply-psu-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-11-09 05:25:30</pubDate>
	<description><![CDATA[HXYMOS  Applications Industrial Power Supply (PSU) should be safe and efficient. In addition, industrial PSU must also meet the statutory requirements such as power factor correction (PFC) . Typical applications include DIN track power supplies or efficient robust power supplies. According to the requirements of power supply and shape and size, many different topologies can be used. The common topology is full bridge topology, AC power supply, using power factor correction (PFC) technology.]]></description>
</item>
<item>
	<title><![CDATA[Electrical equipment Power over Ethernet]]></title>
	<category domain="http://www.hxymos.com/en/automobile/">Industry</category>
	<link><![CDATA[http://www.hxymos.com/en/automobile/electrical-equipment-power-over-ethernet.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-11-09 05:26:49</pubDate>
	<description><![CDATA[HXYMOS  Applications Next-generation Power over Ethernet (Poe) systems can provide up to 100W of power per device. Demand for POE power supplies (PSE) has increased for large LCD screens, wireless hotspots, and pan-tilt zoom CCTV cameras.]]></description>
</item>
<item>
	<title><![CDATA[Asynchronous Buck DC/DC converter]]></title>
	<category domain="http://www.hxymos.com/en/charging/">charging</category>
	<link><![CDATA[http://www.hxymos.com/en/charging/asynchronous-buck-dc-dc-converter.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-11-09 05:30:57</pubDate>
	<description><![CDATA[HXYMOS  Applications Once the main power is efficiently converted from AC to DC, industrial systems usually need further DC/DC conversion to get the right subsystem supply voltage. For the IC on the motherboard, the logic supply voltage can be as low as 1.2 V.]]></description>
</item>
<item>
	<title><![CDATA[Synchronous step-down DC/DC]]></title>
	<category domain="http://www.hxymos.com/en/charging/">charging</category>
	<link><![CDATA[http://www.hxymos.com/en/charging/synchronous-step-down-dc-dc.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-11-09 05:32:14</pubDate>
	<description><![CDATA[HXYMOS  Applications Once the main power is efficiently converted from AC to DC, industrial systems usually need further DC/DC conversion to get the right subsystem supply voltage. For the IC on the motherboard, the logic supply voltage can be as low as 1.2 V.]]></description>
</item>
<item>
	<title><![CDATA[Outdoor power]]></title>
	<category domain="http://www.hxymos.com/en/computing-and-consumer-electronics/">Battery</category>
	<link><![CDATA[http://www.hxymos.com/en/computing-and-consumer-electronics/outdoor-power.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-11-09 05:33:39</pubDate>
	<description><![CDATA[HXYMOS  Applications Energy storage equipment-outdoor power supplies are becoming increasingly popular in China, and can be used for travel, disaster relief, emergency power outages, and outdoor battery life,” he said. “There are well-developed components for the outdoor power market, including BMS boards, equalization circuits, and inverter circuits.”]]></description>
</item>
<item>
	<title><![CDATA[5G battery power]]></title>
	<category domain="http://www.hxymos.com/en/computing-and-consumer-electronics/">Battery</category>
	<link><![CDATA[http://www.hxymos.com/en/computing-and-consumer-electronics/5g-battery-power.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2022-11-09 05:35:06</pubDate>
	<description><![CDATA[HXYMOS  Applications As demand for data continues to grow, the 5G infrastructure will be critical to the next generation of edge cloud computing, Internet of things devices, intelligent transportation systems, and, of course, high-definition AR/VR live video. With 5G infrastructure, we can transition from the existing classic network architecture to a software-defined network with compact, efficient macro-battery power (10kw to 20kw) and micro-battery power (500W to 2kw) , to ensure that we are connected 24 hours a day.]]></description>
</item>
<item>
	<title><![CDATA[Factors to consider when choosing a MOSFET]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/factors-to-consider-when-choosing-a-mosfet.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-12 10:02:35</pubDate>
	<description><![CDATA[In circuit design, it is important to select MOSFETs that are cost-effective, long-life, reliable, stable, and fit. To ensure that the MOSFET you choose meets these standards, we recommend considering several factors and parameters:]]></description>
</item>
<item>
	<title><![CDATA[Selection recommendations for ESD devices]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/selection-recommendations-for-esd-devices.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-08-21 10:43:03</pubDate>
	<description><![CDATA[ESD (Electrostatic Discharge) is one of the most common causes of failure in electronic components and circuit boards. In order to protect electronic components and circuit boards from ESD damage, ESD protection circuitry needs to be added to the circuit design. ESD protection circuits are usually implemented using ESD devices. This paper introduces the selection steps and common parameters of ESD devices, and proposes a comprehensive consideration of the application environment and requirements of ESD device selection methods to help readers select appropriate ESD devices in practical applications and protect electronic components and circuit boards.]]></description>
</item>
<item>
	<title><![CDATA[MOSFET is applied to brushless motor commutator]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/mosfet-is-applied-to-brushless-motor-commutator.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-09-02 02:36:28</pubDate>
	<description><![CDATA[Brushless motor is a kind of motor that uses electronic phase converter to control the speed of the motor, which has the advantages of high efficiency, low noise and long life. The core component of the brushless motor is the inverter, which is responsible for converting DC power to AC power, thus driving the motor to rotate. Brushless motor has the advantages of high efficiency, low noise, small size, light weight, long life, etc., and is widely used in industrial control, household appliances and other fields.]]></description>
</item>
<item>
	<title><![CDATA[Simply put, the difference between MOSFETs and IGBTs]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/simply-put-the-difference-between-mosfets-and-igbts.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-09-09 07:04:46</pubDate>
	<description><![CDATA[MOSFETs and IGBTs are commonly used power semiconductor devices, which have extensive applications in the field of power electronics. However, there are also some important differences between them that can affect their performance and applicability. This article will compare and select MOSFETs and IGBTs from the following aspects:
]]></description>
</item>
<item>
	<title><![CDATA[Common Failure Causes and Solutions of MOSFETs]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/common-failure-causes-and-solutions-of-mosfets.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-09-18 05:21:33</pubDate>
	<description><![CDATA[During the use of MOSFETs, various failure situations may occur, and it is necessary to understand the various causes of failure and their solutions. The following are eight common electronic component failure scenarios and corresponding solutions:]]></description>
</item>
<item>
	<title><![CDATA[The difference between transistor and field-effect transistor]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/the-difference-between-transistor-and-field-effect-transistor.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-09-25 06:23:54</pubDate>
	<description><![CDATA[Triode transistor (also known as bipolar transistor, BJT) and field effect transistor (FET) are two common semiconductor devices used for amplification, switching, and regulation functions in electronic circuits. This article will attempt to introduce the differences between the two in a concise manner]]></description>
</item>
<item>
	<title><![CDATA[Application of MOSFET in Outdoor Power Supply]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/application-of-mosfet-in-outdoor-power-supply.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-09-27 03:05:44</pubDate>
	<description><![CDATA[People‘s pursuit of outdoor living experience is also increasing, and outdoor power supply has brought great convenience to outdoor camping activities, which can provide reliable electricity in a cleaner and more efficient way. People can obtain the necessary electricity anytime and anywhere, making it very convenient to charge phones, lighting equipment, cooking utensils, or other electronic devices.]]></description>
</item>
<item>
	<title><![CDATA[Why should we choose unidirectional TVS as much as possible when selecting TVS]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/why-should-we-choose-unidirectional-tvs-as-much-as-possible-when-selecting-tvs.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-09 05:30:23</pubDate>
	<description><![CDATA[TVS (Transient Voltage Suppressor) is a device used for circuit protection to withstand transient overvoltage, such as electrostatic discharge (ESD) and fast voltage pulses. Unidirectional TVS and bidirectional TVS are two different types of TVS devices, with some differences in their applications.]]></description>
</item>
<item>
	<title><![CDATA[Minimize electromagnetic interference and ESD risks in circuit board design]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/minimize-electromagnetic-interference-and-esd-risks-in-circuit-board-design.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-10-20 11:20:12</pubDate>
	<description><![CDATA[In the absence of sufficient circuit board design, even anti-static diodes with high anti-static (ESD) protection performance cannot provide sufficient protection. Especially, the circuit board design greatly affects the transient high-frequency pulses that occur immediately after ESD impact.]]></description>
</item>
<item>
	<title><![CDATA[Application Skills and Typical Cases of MC34063 in PCBA Board Design and Development]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/application-skills-and-typical-cases-of-mc34063-in-pcba-board-design-and-development.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-11-03 06:28:03</pubDate>
	<description><![CDATA[In order to improve stability, performance, and simplify circuits, we often rely on various components, one of which is MC34063. This article will introduce the application techniques and some typical cases of MC34063 in the design and development of PCBA boards, to help you better utilize this component.]]></description>
</item>
<item>
	<title><![CDATA[Hua Xuan Yang Electronics: Domestic Power Device Solutions for PC Power Supplies]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/hua-xuan-yang-electronics-domestic-power-device-solutions-for-pc-power-supplies.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-11-30 04:15:10</pubDate>
	<description><![CDATA[In the pursuit of efficient, reliable, and innovative electronic circuit design, the selection of power devices is critical. As an engineer involved in the design and development of consumer electronics circuits, your performance requirements for PC power supplies are undoubtedly high. This article introduces the application of power devices under "Hua Xuan Yang Electronics" in PC power supplies, providing you with domestic power device solutions.]]></description>
</item>
<item>
	<title><![CDATA[Optimizing Circuits to Enhance MOSFET Stability and Efficiency]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/optimizing-circuits-to-enhance-mosfet-stability-and-efficiency.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-11-30 04:15:19</pubDate>
	<description><![CDATA[In the application of synchronous rectification, how to improve the stability, efficiency and reduce power consumption of MOSFET by optimizing circuits is a key issue. This article will explore some methods and techniques to help you fully utilize the performance of MOSFET, thereby improving product quality and performance.]]></description>
</item>
<item>
	<title><![CDATA[Title: Why is it important to prioritize electromagnetic compatibility (EMC) in circuit design?]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/title-why-is-it-important-to-prioritize-electromagnetic-compatibility-emc-in-circuit-design-.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-11-30 04:15:29</pubDate>
	<description><![CDATA[We live in a world full of various electronic devices, from smartphones and computers to televisions and household appliances, they are constantly transmitting and receiving electronic signals. However, when these devices work, they generate electromagnetic fields that may affect the normal operation of other devices. This leads to an important concept that we must pay attention to when designing circuits - electromagnetic compatibility (EMC).]]></description>
</item>
<item>
	<title><![CDATA[Huaxuan Yang Electronics: UPS Uninterruptible Power Supply Power Device Solution]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/huaxuan-yang-electronics-ups-uninterruptible-power-supply-power-device-solution.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-13 10:03:22</pubDate>
	<description><![CDATA[Huaxuan Yang Electronics is a professional enterprise that produces and sells various power devices. We have many years of research and development experience and advanced production processes. Our products cover PFC and charging MOSFETs, fast recovery diodes for rectification, linear voltage stabilizing ICs for auxiliary power supply, and boost MOSFETs. We can provide you with a complete set of power device solutions to meet your various needs in UPS design and development.]]></description>
</item>
<item>
	<title><![CDATA[Huaxuan Yang Electronics: Micro motor MOSFET drive solution]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/huaxuan-yang-electronics-micro-motor-mosfet-drive-solution.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-13 10:04:02</pubDate>
	<description><![CDATA[In the driving scheme of micro motors, the power device MOSFET is the core component of the motor drive, and its performance and stability directly affect the working effect of the entire system. It not only needs to have high performance, but also needs to consider issues such as power consumption and heat dissipation.
As a common power device, Huaxuan Yang Electronic MOSFET‘s role in micro motors is mainly reflected in the driving and control of the motor. By selecting and designing MOSFETs reasonably, efficient operation and precise control of micro motors can be achieved, while minimizing power consumption. “]]></description>
</item>
<item>
	<title><![CDATA[Application of HXY MOSFET in Micro Photovoltaic Inverters]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/application-of-hxy-mosfet-in-micro-photovoltaic-inverters.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-29 06:04:24</pubDate>
	<description><![CDATA[With the gradual popularization of clean energy, the demand for low-power photovoltaic inverters in the consumer electronics field is constantly increasing. In this field, power semiconductor discrete device MOSFET has become a favored choice for design engineers due to its excellent performance.]]></description>
</item>
<item>
	<title><![CDATA[The Application of MOSFET Power Semiconductors in Landscape Tools]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/the-application-of-mosfet-power-semiconductors-in-landscape-tools.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2023-12-29 06:05:13</pubDate>
	<description><![CDATA[In recent years, with the rapid development of consumer electronics, the application of brushless motor technology in garden tools has received increasing attention. In this era of continuous pursuit of excellent performance, power semiconductor discrete devices MOSFETs are playing a crucial role, bringing robust and durable performance to brushless motor controllers for garden tools.]]></description>
</item>
<item>
	<title><![CDATA[Huaxuan Yang Electronics: Building Excellent Intelligent Meter Solutions with Diodes, Transistors, LDOs, and EEPROMs]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/huaxuan-yang-electronics-building-excellent-intelligent-meter-solutions-with-diodes-transistors-ldos-and-eeproms.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-26 01:49:49</pubDate>
	<description><![CDATA[The new era of smart meters has arrived, and the key to building this future is the components we choose in circuit design. In this article, we will explore how to create excellent circuit solutions by cleverly combining components such as diodes, transistors, LDOs (low voltage differential regulators), and EEPROMs (electrically erasable programmable read-only memory), providing some suggestions and ideas for engineers in consumer electronic circuit design and development.]]></description>
</item>
<item>
	<title><![CDATA[Huaxuan Yang Electronics: Optimization and Performance Improvement of Power Devices Applied in PoE Communication Equipment]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/huaxuan-yang-electronics-optimization-and-performance-improvement-of-power-devices-applied-in-poe-communication-equipment.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-01-26 01:51:16</pubDate>
	<description><![CDATA[Power Over Ethernet (PoE) technology, as an important innovation, provides convenient and efficient power supply for our devices. This article will focus on the key power devices in PoE communication devices, namely MOS transistors, TVS transistors, and rectifier bridges, and explore how they work together to achieve excellent performance and stable operation. 1. Selection and optimization of MOSFETs: In PoE devices, MOSFETs play an important role in regulating power switches. Reasonable selection and optimization of MOSFET driver circuits are crucial for overall performance. Firstly, we need to consider the conduction resistance, leakage current, and conduction loss of MOSFETs. By using MOSFETs with low on resistance and low leakage current, power loss can be reduced and system efficiency can be improved. In addition, optimizing the driving circuit parameters appropriately, such as power supply voltage and pulse width, can also effectively improve the performance of MOSFETs.]]></description>
</item>
<item>
	<title><![CDATA[【HXY MOSFET】: Hiring Power Device Product Manager]]></title>
	<category domain="http://www.hxymos.com/en/recruitment/">Recruitment</category>
	<link><![CDATA[http://www.hxymos.com/en/recruitment/【hxy-mosfet】-hiring-power-device-product-manager.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-20 11:16:26</pubDate>
	<description><![CDATA[Shenzhen Huaxuan Yang Electronics Co., Ltd. is located in Shenzhen, the innovation capital of China. It is a high-tech enterprise that focuses on the research and sales of high-performance and high-quality power devices. We have won widespread praise and high recognition in the industry with our outstanding technical strength and keen market insight. Due to business development needs, we are sincerely recruiting a senior and passionate power device product manager.]]></description>
</item>
<item>
	<title><![CDATA[【HXY MOSFET】: Recruitment for Director of Power Device Quality Department]]></title>
	<category domain="http://www.hxymos.com/en/recruitment/">Recruitment</category>
	<link><![CDATA[http://www.hxymos.com/en/recruitment/【hxy-mosfet】-recruitment-for-director-of-power-device-quality-department.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-20 11:17:07</pubDate>
	<description><![CDATA[Shenzhen Huaxuan Yang Electronics Co., Ltd., as a research and development and manufacturer of power device products, is now inviting you with rich experience and professional skills to join us as the head of the power device quality department due to business development and team expansion needs.]]></description>
</item>
<item>
	<title><![CDATA[【HXY MOSFET】: Sincerely recruiting sales personnel for power devices]]></title>
	<category domain="http://www.hxymos.com/en/recruitment/">Recruitment</category>
	<link><![CDATA[http://www.hxymos.com/en/recruitment/【hxy-mosfet】-sincerely-recruiting-sales-personnel-for-power-devices.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-20 11:17:43</pubDate>
	<description><![CDATA[Shenzhen Huaxuan Yang Electronics Co., Ltd., located in the city of technological innovation - Shenzhen, is a high-tech enterprise that focuses on the research and development, production, and sales of power devices. We have won high recognition in the industry with our outstanding technical strength and rigorous quality management system. Due to the needs of business development, we eagerly look forward to aspiring individuals joining our team to create new brilliance together.]]></description>
</item>
<item>
	<title><![CDATA[【HXY MOSFET】: Sincerely recruiting power device packaging process engineers]]></title>
	<category domain="http://www.hxymos.com/en/recruitment/">Recruitment</category>
	<link><![CDATA[http://www.hxymos.com/en/recruitment/【hxy-mosfet】-sincerely-recruiting-power-device-packaging-process-engineers.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-02-20 11:18:22</pubDate>
	<description><![CDATA[Shenzhen Huaxuan Yang Electronics Co., Ltd., as a research and manufacturing enterprise for power device semiconductor products, focuses on exploring and innovating cutting-edge technologies. Due to the needs of business development, we are now recruiting power device packaging process engineers to the public. We look forward to your joining and creating brilliance together!]]></description>
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	<title><![CDATA[Huaxuan Yang Electronics【HXY MOSFET】: Performance and application scenarios of 30 silicon carbide Schottky models]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/huaxuan-yang-electronics【hxy-mosfet】-performance-and-application-scenarios-of-30-silicon-carbide-schottky-models.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-03-21 02:49:05</pubDate>
	<description><![CDATA[This series of products covers multiple key parameter configurations to meet the needs of different customers for high-performance power devices. Among them, the reverse breakdown voltage (VR) is 650V, 1200V, and 1700V, which can adapt to various application scenarios from medium to low voltage to high voltage environments. The forward current (IF) range covers a wide range of 6A to 60A, providing flexible choices for different load requirements.
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	<title><![CDATA[Huaxuan Yang Electronics【HXY MOSFET】: Recommendation of 17 Silicon Carbide MOSFET Products - Industrial and New Energy Vehicle Fields]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/huaxuan-yang-electronics【hxy-mosfet】-recommendation-of-17-silicon-carbide-mosfet-products--industrial-and-new-energy-vehicle-fields.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-03-21 02:50:06</pubDate>
	<description><![CDATA[With the continuous iteration and innovation of technology, silicon carbide (SiC) power devices have shown strong competitive advantages in the global industrial and new energy vehicle fields. Today, I will analyze and recommend 17 high-performance silicon carbide MOSFET product lines developed and produced by our company. These products, with their excellent VDSS, RDON, and ID parameter ranges, as well as the TO247 packaging form, provide the best solutions for different application needs.]]></description>
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	<title><![CDATA[【HXY MOSFET】provides a power device solution for LED backlit LCD TVs]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/【hxy-mosfet】provides-a-power-device-solution-for-led-backlit-lcd-tvs.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-08 10:32:29</pubDate>
	<description><![CDATA[In this era where visual experience is paramount, LED backlit LCD TVs have become the preferred choice for living rooms in millions of households due to their excellent image quality and energy-saving and efficient features. However, behind the excellent display effect, it cannot be separated from the silent support of a series of high-performance power devices. We are well aware of the decisive impact of every detail on overall performance. Today, let‘s delve into how to inject powerful energy into LED backlit LCD TVs through carefully designed power device solutions, opening a new chapter in the visual feast.
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	<title><![CDATA[Empowering wireless charging in vehicles with 【HXY MOSFET】, our power device solution]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/empowering-wireless-charging-in-vehicles-with-【hxy-mosfet】-our-power-device-solution.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-08 10:34:25</pubDate>
	<description><![CDATA[In the era of intelligent cars, convenient and efficient in car devices have become a key element in improving driving experience. Among them, in car wireless mobile phone chargers are loved by car owners due to their unrestricted and on-demand charging characteristics. However, behind an excellent wireless charger, precise matching, efficient and stable power device support is indispensable. Today, I will take you to deeply understand the power device solution tailored for in car wireless mobile phone chargers (with three built-in coils), including MOS tubes, transistors, and LDO, allowing the power of technology to quietly inject infinite convenience into your driving life
“
]]></description>
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	<title><![CDATA[【HXY MOSFET】Unlocking the technological charm of high-speed blower tubes: power device optimization solutions]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/【hxy-mosfet】unlocking-the-technological-charm-of-high-speed-blower-tubes-power-device-optimization-solutions.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-08 10:35:10</pubDate>
	<description><![CDATA[In this era of pursuing both efficiency and quality, every innovation in household appliances is quietly improving our quality of life. The high-speed blower, as an indispensable small household appliance in daily care, its performance directly affects our user experience. Today, we will delve deeper into the secret behind high-speed hair dryers - efficient power device solutions, revealing how to achieve a fast, safe, and low-energy hair blowing experience through selected MOS tubes, fast recovery diodes, Schottky diodes, and rectifier bridges working together.
]]></description>
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	<title><![CDATA[【HXY MOSFET】 Innovates the Core Power of Neck Massage Devices: A One Stop Power Device Solution]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/【hxy-mosfet】-innovates-the-core-power-of-neck-massage-devices-a-one-stop-power-device-solution.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-08 10:35:59</pubDate>
	<description><![CDATA[In this fast-paced era, neck fatigue has become a standard feature for many modern people. In order to alleviate this problem, portable neck massagers have emerged, becoming a health assistant for many office workers and those who bow their heads due to their small, portable, and easy to operate characteristics. We are committed to providing efficient and reliable power device solutions for these intelligent health devices, making every massage a perfect fusion of technology and health. This article will reveal our customized power device solution for neck massagers, including MOS transistors, diodes, transistors, LDO linear regulators, and lithium battery charge and discharge management ICs, to help create a better massage experience.
]]></description>
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	<title><![CDATA[【HXY MOSFET】Huaxuan Yang Electronics cordially invites to meet at the Shanghai Munich Electronics Exhibition]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/【hxy-mosfet】huaxuan-yang-electronics-cordially-invites-to-meet-at-the-shanghai-munich-electronics-exhibition.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-06-29 01:57:42</pubDate>
	<description><![CDATA[Huaxuan Yang Electronics, a trusted domestic component solution provider, is about to attend the Munich Electronics Exhibition in Shanghai. We hope to take this opportunity to deepen exchanges and work together with our partners and industry colleagues for the future.
]]></description>
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	<title><![CDATA[【 Huaxianyang Electronics · Munich Electronics Exhibition Special 】 - Share the Future of "Chip" with You and Draw a Technological Blueprint Together]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/【-huaxianyang-electronics-·-munich-electronics-exhibition-special-】--share-the-future-of-chip-with-you-and-draw-a-technological-blueprint-together.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-07-19 06:18:26</pubDate>
	<description><![CDATA[In this era full of innovation and opportunities, Huaxianyang Electronics is honored to participate in the 2024 Shanghai Munich Electronic Exhibition (Semiconductor Components Exhibition), witnessing the leap and progress of technology together with colleagues in the global electronics industry. This exhibition is not only a feast for technical exchange, but also an important platform for our company to showcase and share. Today, with full harvest and excitement, we invite you to review those unforgettable moments together.
]]></description>
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	<title><![CDATA[Important Notice on Product Label Changes]]></title>
	<category domain="http://www.hxymos.com/en/announcement/">Announcement</category>
	<link><![CDATA[http://www.hxymos.com/en/announcement/important-notice-on-product-label-changes.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-16 11:47:32</pubDate>
	<description><![CDATA[Starting from [2024/8/16], you will begin receiving products with new labels. The new label design not only enhances the visual effect, but also includes more detailed product information, aiming to provide you with clearer and more comprehensive product descriptions. Although we have taken measures to ensure that this transition is as smooth as possible, we anticipate that there may be a coexistence of new and old labels in the short term. We assure you that regardless of the product label, its intrinsic quality and specifications remain unchanged.]]></description>
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	<title><![CDATA[【HXY MOSFET】ESD/TVS Static Surge Protection Components - Your Trusted Choice]]></title>
	<category domain="http://www.hxymos.com/en/company-news/">company news</category>
	<link><![CDATA[http://www.hxymos.com/en/company-news/【hxy-mosfet】esd-tvs-static-surge-protection-components--your-trusted-choice.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2024-08-29 01:43:30</pubDate>
	<description><![CDATA[In today‘s rapidly developing electronic device market, electrostatic discharge (ESD) and transient voltage spike (TVS) have become important factors affecting product reliability and service life. To address these challenges, Huaxianyang Electronics, as a semiconductor component supplier, is committed to providing high-quality and high-performance ESD/TVS protection solutions.
]]></description>
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	<title><![CDATA[Shenzhen Lichuang E-commerce Co., Ltd]]></title>
	<category domain="http://www.hxymos.com/en/agency-center/">Agent inquiry</category>
	<link><![CDATA[http://www.hxymos.com/en/agency-center/shenzhen-lichuang-e-commerce-co--ltd.html]]></link>
	<author><![CDATA[]]></author>
	<source><![CDATA[]]></source>
	<pubDate>2025-03-10 04:15:42</pubDate>
	<description><![CDATA[]]></description>
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