This article systematically elaborates on the core advantages of Huaxuanyang silicon carbide Schottky diodes (SiC SBDs) in power electronic systems. By comparing traditional silicon-based devices and combining measured data with engineering calculations, quantitatively analyze their breakthrough performance in switch losses, reverse recovery characteristics, and high-temperature stability. Focus on analyzing the energy-saving benefits of photovoltaic inverters and electric vehicle charging piles in two major application scenarios, providing engineers with selection and design basis.

1、 Technical principles and structural characteristics

Silicon carbide Schottky diodes (SiC SBDs) use wide bandgap semiconductor materials (bandgap width of 3.26eV, silicon is 1.12eV) to achieve unidirectional conductivity through a metal semiconductor Schottky barrier. The core breakthrough lies in:

-Near zero reverse charge recovery (typical value at nC level): Eliminating carrier recombination losses in traditional silicon FRDs

-Positive temperature coefficient conduction pressure drop (VF): Avoiding the risk of thermal runaway

-Junction temperature tolerance (Tj max=175 ℃ typical value): higher than 50 ℃ for silicon devices

>Term description: Qrr (reverse charge recovery) refers to the amount of stored charge that needs to be withdrawn when a diode switches from conducting to turning off, and is the main source of switching losses.

2、 Key parameter advantages of Huaxuanyang products

Taking C3D06065A model as an example:

3、 Quantitative analysis of energy-saving benefits

Case 1: Boost circuit for a 3kW photovoltaic inverter

-Working conditions: Vin=200VDC, Vout=400VDC, fsw=100kHz, Io=7.5A

-Loss calculation model:

```

Total loss=conduction loss+switching loss

Conduction loss=VF × Io × D (where D is the duty cycle)

Switching loss=0.5 × Vr × Ir × trr × fsw

```

`Efficiency improvement=[(P_loss_Silicon - P_loss_Sic)/P_in] × 100%, where P_in is the input power.

>Calculation basis: JEDEC JESD51-1 standard test conditions, ambient temperature 25 ℃

Case: Fast Charging Module for 2:30kW Electric Vehicle

When applied in PFC circuits:

-The system efficiency has increased from 97.1% to 98.6% (measured data)

-6000 hours of annual operation can save electricity:

`(30kW ÷ 97.1% - 30kW ÷ 98.6%) × 6000h ≈ 2820kWh

-Reduce radiator volume by 40% and system cost by 15%

4、 Engineering Application Practice

1. Photovoltaic inverter

-Solving the problem of "vampire losses" in string inverters at night

-Tested standby power consumption<0.5W (silicon solution>2W)

2. On board charger (OBC)

-Meet AEC-Q101 certification requirements

-Maintain an efficiency of over 95% at an ambient temperature of 125 ℃

3. Server power supply

-Realize 80PLUS titanium alloy energy efficiency (>96% @ 50% load)

-Power density exceeds 50W/in ³

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conclusion

Huaxuanyang silicon carbide Schottky diode has achieved breakthroughs in three key dimensions through material characteristic innovation:

1. Energy efficiency improvement: typical application scenarios have an efficiency gain of 2-3%

2. System slimming: Reduce heat dissipation requirements by 30-50%

3. Reliability enhancement: 175 ℃ junction temperature capability extends equipment life

Recommended for:

-AC/DC and DC/DC converters with switching frequency ≥ 10kHz

-Enclosed spaces with an ambient temperature greater than 85 ℃

-Compact design with power density requirement>30W/in ³